Sensor device

Abstract

According to one embodiment, a sensor device comprises: an insulating substrate having a serpentine strip-shaped portion and an island-shaped portion connected to the strip-shaped portion; a first inorganic insulating film arranged on the island-shaped portion; a first wiring layer arranged on the first inorganic insulating film; a second inorganic insulating film arranged on the first wiring layer; a second wiring layer arranged on the second inorganic insulating film; an organic insulating film arranged on the second wiring layer; a barrier film formed of an inorganic insulating material and covering the organic insulating film; a sensor element arranged on the barrier film; and a sealing film formed of an inorganic insulating material and covering the sensor element, wherein the sensor element is an organic photodiode, the barrier film covers the side of the organic insulating film, and the sealing film is in contact with the barrier film and the second inorganic insulating film on the outside of the sensor element.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority based on Japanese Patent Application No. 2021-079733 filed on May 10, 2021, and all the contents described in the Japanese application are cited herein. Technical Field

[0003] Embodiments of the present invention relate to a sensor device. Background Art

[0004] In recent years, the use of flexible substrates having flexibility and stretchability has been studied in various fields. For example, a flexible substrate having electrical components arranged in a matrix is ​​attached to a housing of an electronic device or a curved surface of a human body. As electrical components, various sensors such as contact sensors and temperature sensors or display components can be applied.

[0005] In a flexible substrate, it is necessary to take measures to prevent the wiring from being damaged by stress due to bending or expansion and contraction. As such a measure, for example, a shape in which the wiring is serpentine (a meandering shape) has been proposed. Summary of the invention

[0006] An object of the present invention is to provide a sensor device capable of suppressing a decrease in reliability.

[0007] According to one technical solution, a sensor device comprises: an insulating substrate having a serpentine strip-shaped portion and an island-shaped portion connected to the strip-shaped portion; a first inorganic insulating film arranged on the island-shaped portion; a first wiring layer arranged on the first inorganic insulating film; a second inorganic insulating film arranged on the first wiring layer; a second wiring layer arranged on the second inorganic insulating film; an organic insulating film arranged on the second wiring layer; a barrier film formed of an inorganic insulating material and covering the organic insulating film; a sensor element arranged on the barrier film; and a sealing film formed of an inorganic insulating material and covering the sensor element, the sensor element being an organic photodiode, the barrier film covering the side of the organic insulating film, and the sealing film being in contact with the barrier film and the second inorganic insulating film on the outside of the sensor element.

[0008] According to the technical solution, it is possible to provide a sensor device capable of suppressing a decrease in reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 It is a schematic plan view of the sensor device 1 according to the embodiment.

[0010] Figure 2 It is a plan view showing an example of the flexible substrate 2 .

[0011] Figure 3 1 is a cross-sectional view showing an example of a flexible substrate 2 including an island-shaped portion 1.

[0012] Figure 4 1 is a cross-sectional view showing an example of the flexible substrate 2 including the strip-shaped portion BX.

[0013] Figure 5 It is a plan view showing a portion of the insulating base material 10 and the sealing film 15 in an enlarged manner.

[0014] Figure 6 It is a diagram for explaining a method of manufacturing the flexible substrate 2 .

[0015] Figure 7 It is a diagram for explaining a method of manufacturing the flexible substrate 2 .

[0016] Figure 8 It is a diagram for explaining a method of manufacturing the flexible substrate 2 .

[0017] Fig. 9 It is a diagram for explaining a method of manufacturing the flexible substrate 2 . DETAILED DESCRIPTION

[0018] Below, while referring to the attached Figure 1 The present embodiment is described while the disclosure is only an example. In addition, the disclosure is only an example, and the forms that can be easily thought of by those skilled in the art with appropriate changes while maintaining the main purpose of the invention are of course included in the scope of the present invention. In addition, in order to make the description clearer, the drawings schematically show the width, thickness, shape, etc. of each part compared with the actual form, but this is only an example and does not limit the interpretation of the present invention. In addition, in this specification and each figure, the same reference numerals are given to the components that have the same or similar functions as those described in the previous figure, and the repeated detailed descriptions are appropriately omitted.

[0019] Figure 1 1 is a schematic top view of the sensor device 1 according to the present embodiment. In the present embodiment, the first direction X, the second direction Y, and the third direction Z are defined as shown in the figure. The first direction X, the second direction Y, and the third direction Z are mutually orthogonal, but may intersect each other at an angle other than 90 degrees. The first direction X and the second direction Y correspond to directions in the plane of the main surface of the sensor device 1, for example, and the third direction Z corresponds to the thickness direction of the sensor device 1.

[0020] The sensor device 1 includes a flexible substrate 2, a circuit substrate 3, and a controller 4. The circuit substrate 3 is, for example, a flexible printed circuit substrate, and is electrically connected to each terminal in the terminal area TA of the flexible substrate 2. The controller 4 is mounted on the circuit substrate 3, but may also be mounted on the flexible substrate 2.

[0021] The flexible substrate 2 is configured to have flexibility and stretchability as a whole and includes a first driver DR1, a second driver DR2, X wirings WX, Y wirings WY, a sensor element SD, and the like.

[0022] The first driver DR1 and the second driver DR2 are arranged on the flexible substrate 2, for example, but may be arranged on the circuit substrate 3, the controller 4, or other substrates. The X wiring WX is a general term for wiring extending substantially along the first direction X, and at least a portion of the X wiring WX is electrically connected to the first driver DR1. A plurality of X wirings WX are arranged in the second direction Y. The Y wiring WY is a general term for wiring extending substantially along the second direction Y, and at least a portion of the Y wiring WY is electrically connected to the second driver DR2. A plurality of Y wirings WY are arranged in the first direction X. As these X wirings WX and Y wirings WY, there are a plurality of types of wirings such as scanning lines, signal lines, power lines, and various control lines.

[0023] The plurality of sensor elements SD are arranged in a matrix in the first direction X and the second direction Y in the active area AA, and are electrically connected to the X wirings WX and the Y wirings WY.

[0024] The flexible substrate 2 includes an insulating base material 10 described later. In one example, the first driver DR1 , the second driver DR2 , the X wiring WX, the Y wiring WY, and the sensor element SD are all arranged on the insulating base material 10 .

[0025] Figure 2 It is a plan view showing an example of the flexible substrate 2 .

[0026] The insulating substrate 10 is stretchable. Here, stretchable means the property of being able to stretch and shrink, that is, the property of being able to stretch from a non-stretched state as a normal state and being able to recover when released from the stretched state. The non-stretched state is the state when no tensile stress is applied.

[0027] The insulating substrate 10 is formed in a mesh shape, for example. That is, the insulating substrate 10 has a plurality of strip-shaped portions BX formed approximately along the first direction X, a plurality of strip-shaped portions BY formed approximately along the second direction Y, and a plurality of island-shaped portions I. The plurality of strip-shaped portions BX are arranged in the second direction Y, and the plurality of strip-shaped portions BY are arranged in the first direction X. The strip-shaped portions BX and BY are respectively retractable. In one example, the strip-shaped portions BX and BY are serpentine. The island-shaped portion I corresponds to the intersection of the strip-shaped portion BX and the strip-shaped portion BY.

[0028] A plurality of islands I are arranged in a matrix in the first direction X and the second direction Y. The islands I adjacent to each other in the first direction X are connected by a strip BX, and the islands I adjacent to each other in the second direction Y are connected by a strip BY. The islands I may be quadrilaterals such as squares, rectangles, rhombuses, or other polygons, or other shapes such as circles or ellipses. The strips BX and BY may be connected to the corners of the islands I or to the sides of the islands I.

[0029] In other words, the insulating substrate 10 has a plurality of first openings (through holes) OP1. The plurality of first openings OP1 are arranged in a matrix in the first direction X and the second direction Y. One first opening OP1 is surrounded by the outer edge 10E of the insulating substrate 10 in a plan view. Alternatively, one first opening OP1 is surrounded by two strip-shaped portions BX adjacent to each other in the second direction Y and two strip-shaped portions BY adjacent to each other in the first direction X.

[0030] The strip-shaped portion BY is located between two first openings OP1 adjacent to each other in the first direction X. The strip-shaped portion BX is located between two first openings OP1 adjacent to each other in the second direction Y. The shapes of the first openings OP1 are substantially the same.

[0031] The strip-shaped portions BX and BY have one or more curved portions C. Such a shape is sometimes referred to as a meander pattern. However, the shape of the strip-shaped portions BX and BY is not limited to Figure 2 The shapes of the strip portions BX and BY may be the same as or different from each other.

[0032] Such insulating base material 10 is formed of, for example, polyimide. In addition, the material of the insulating base material 10 is not limited to polyimide, and other resin materials may be used.

[0033] The X wiring WX is disposed on the strip-shaped portion BX and meanders in the same manner as the strip-shaped portion BX. The Y wiring WY is disposed on the strip-shaped portion BY and meanders in the same manner as the strip-shaped portion BY.

[0034] The sensor element SD is arranged on the island portion I and is electrically connected to the X wiring WX and the Y wiring WY. For example, one sensor element SD is arranged on one island portion I, but a plurality of sensor elements SD may be arranged. The sensor element SD is a photoelectric conversion element or a light sensor that receives light and outputs an electrical signal. In the present embodiment, the sensor element SD is an organic photodiode having an organic photoelectric conversion layer in one example. In addition, the sensor element SD may also be other elements such as an inorganic photodiode.

[0035] Figure 3 1 is a cross-sectional view showing an example of a flexible substrate 2 including an island-shaped portion 1.

[0036] The flexible substrate 2 includes an insulating base material 10, a first inorganic insulating film 11, a first wiring layer 21, a second inorganic insulating film 12, a second wiring layer 22, an organic insulating film 13, a barrier film 14, a sensor element SD, and a sealing film 15. The insulating base material 10 shown in the figure corresponds to Figure 2 The island I shown.

[0037] In addition, the entire flexible substrate 2 may be covered with a protective film having stretchability. Although the protective film is not shown in the figure, the back surface of the insulating base material 10 and the surface of the sealing film 15 may be covered with a protective film.

[0038] The first inorganic insulating film 11 is disposed on the insulating base material 10 or the island portion 1. The first wiring layer 21 is disposed on the first inorganic insulating film 11. The second inorganic insulating film 12 is disposed on the first wiring layer 21. The second wiring layer 22 is disposed on the second inorganic insulating film 12.

[0039] The first inorganic insulating film 11 and the second inorganic insulating film 12 are each formed as a multilayer body in which a plurality of insulating layers are stacked. In one example, the first inorganic insulating film 11 and the second inorganic insulating film 12 include a silicon nitride layer and a silicon oxide layer, respectively. Alternatively, the first inorganic insulating film 11 and the second inorganic insulating film 12 may be a single layer body.

[0040] The first wiring layer 21 and Figure 2 The first wiring layer 21 is electrically connected to the X wiring WX and the Y wiring WY shown. The second wiring layer 22 is electrically connected to the other of the X wiring WX and the Y wiring WY. In one example, the first wiring layer 21 is electrically connected to the X wiring WX and includes a gate electrode of the switching element. The second wiring layer 22 includes a source electrode and a drain electrode of the switching element, the source electrode is electrically connected to the Y wiring WY, and the drain electrode is electrically connected to the sensor element SD. The second wiring layer 22 in the figure corresponds to the drain electrode DE.

[0041] The organic insulating film 13 is disposed on the second inorganic insulating film 12 and the second wiring layer 22, and has a contact hole CH1 penetrating to the drain electrode DE. The barrier film 14 covers the entire organic insulating film 13. That is, the barrier film 14 covers not only the upper surface 13T but also the side surface 13S of the organic insulating film 13. The barrier film 14 has a contact hole CH2 penetrating to the drain electrode DE in the contact hole CH1.

[0042] The barrier film 14 is an inorganic insulating film, and is formed of an inorganic insulating material such as silicon nitride or aluminum oxide. Since the barrier film 14 covers the entire organic insulating film 13 , it suppresses the penetration of moisture into the organic insulating film 13 or the diffusion of moisture contained in the organic insulating film 13 .

[0043] The sensor element SD is disposed on the barrier film 14. The sensor element SD includes a lower electrode E1, an upper electrode E2, and an organic photoelectric conversion layer OL. One of the lower electrode E1 and the upper electrode E2 functions as an anode of the sensor element SD, and the other functions as a cathode of the sensor element SD.

[0044] The lower electrode E1 is located directly above the upper surface 13T, disposed on the barrier film 14, and in contact with the barrier film 14. The lower electrode E1 is in contact with the drain electrode DE in the contact holes CH1 and CH2. The lower electrode E1 is patterned for each sensor element SD (or for each island I).

[0045] Such a lower electrode E1 is formed of, for example, a transparent conductive material such as indium tin oxide, indium zinc oxide, or a metal material such as silver, titanium, aluminum, etc. In addition, the lower electrode E1 may be a single layer of a transparent conductive material, a single layer of a metal material, or a multilayer of a layer of a transparent conductive material and a layer of a metal material.

[0046] The organic photoelectric conversion layer OL is disposed on the lower electrode E1 and is in contact with the lower electrode E1. In addition, the organic photoelectric conversion layer OL extends to the outside of the lower electrode E1 just above the upper surface 13T and is in contact with the barrier film 14. The organic photoelectric conversion layer OL may include a hole transport layer or an electron transport layer in addition to the active layer.

[0047] The upper electrode E2 is arranged on the organic photoelectric conversion layer OL and is in contact with the organic photoelectric conversion layer OL. As described later, the upper electrode E2 not only extends to the island portion I but also extends to the strip portion, and is formed integrally with the upper electrode of the adjacent sensor element SD. That is, the upper electrode E2 is a common electrode arranged across a plurality of sensor elements SD. Such an upper electrode E2 is formed of a transparent conductive material such as indium tin oxide, indium zinc oxide, etc.

[0048] The sealing film 15 covers the sensor element SD. That is, the sealing film 15 covers the upper electrode E2 and is in contact with the side surface OLS of the organic photoelectric conversion layer OL. In addition, the sealing film 15 is in contact with the barrier film 14 on the outside of the sensor element SD. That is, the sealing film 15 covers the portion of the barrier film 14 that is in contact with the side surface 13S, and covers the end 14E of the barrier film 14. In addition, the sealing film 15 is in contact with the second inorganic insulating film 12 exposed from the barrier film 14. In addition, in the example shown in the figure, the sealing film 15 is not in contact with the insulating substrate 10, the first inorganic insulating film 11, and the first wiring layer 21.

[0049] Furthermore, the sealing film 15 has a second opening (through hole) OP2 overlapping with the first opening OP1 of the insulating substrate 10 . The second opening OP2 is surrounded by an outer edge 15E of the sealing film 15 .

[0050] The sealing film 15 is an inorganic insulating film, and is formed of an inorganic insulating material such as silicon nitride or aluminum oxide. In one example, the sealing film 15 is formed of the same material as the barrier film 14. Therefore, the barrier film 14 and the sealing film 15 have high adhesion, and high sealing performance can be achieved.

[0051] As described above, the sensor element SD is an organic photodiode and includes an organic photoelectric conversion layer OL. Since the barrier film 14 formed as the base of the sensor element SD covers the entire organic insulating film 13, moisture penetration from the organic insulating film 13 to the sensor element SD is suppressed. In addition, the sensor element SD is sealed by the sealing film 15. Therefore, the sensor element SD is not exposed to the outside air, and moisture penetration to the sensor element SD is suppressed. Therefore, the sensor element SD, especially the organic photoelectric conversion layer OL, is suppressed from being deteriorated by the outside air and moisture. Therefore, a decrease in reliability is suppressed.

[0052] Figure 4 2 is a cross-sectional view showing an example of a flexible substrate 2 including a strip-shaped portion BX. Figure 4 2 , the cross section including the strip-shaped portion BX is described, but the cross section including the strip-shaped portion BY is configured similarly to the cross section including the strip-shaped portion BX, and the description thereof is omitted.

[0053] The first inorganic insulating film 11, the second inorganic insulating film 12, the organic insulating film 13, the barrier film 14, and the sealing film 15 extend to the strip-shaped portion BX of the insulating substrate 10. In the example shown in the figure, the first wiring layer 21 is arranged between the first inorganic insulating film 11 and the second inorganic insulating film 12, and the second wiring layer 22 is arranged between the second inorganic insulating film 12 and the organic insulating film 13.

[0054] That is, the first inorganic insulating film 11 is disposed on the strip-shaped portion BX of the insulating substrate 10, the first wiring layer 21 is disposed on the first inorganic insulating film 11, the second inorganic insulating film 12 is disposed on the first wiring layer 21, the second wiring layer 22 is disposed on the second inorganic insulating film 12, and the organic insulating film 13 is disposed on the second inorganic insulating film 12 and the second wiring layer 22. In addition, the barrier film 14 covers the entirety of the organic insulating film 13 including the upper surface 13T and the side surface 13S.

[0055] The lower electrode E1 or a conductive layer in the same layer as the lower electrode E1 is not arranged directly above the strip-shaped portion BX.

[0056] The organic photoelectric conversion layer OL and the upper electrode E2 extend to the top of the strip-shaped portion BX. That is, the organic photoelectric conversion layer OL and the upper electrode E2 extend to the barrier film 14 overlapping the strip-shaped portion BX. The organic photoelectric conversion layer OL is in contact with substantially the entire upper surface 14T of the barrier film 14. The upper electrode E2 overlaps substantially the entire organic photoelectric conversion layer OL.

[0057] The sealing film 15 covers the upper electrode E2 and contacts the side surface OLS of the organic photoelectric conversion layer OL. The sealing film 15 contacts the barrier film 14 outside the organic photoelectric conversion layer OL. The sealing film 15 contacts the second inorganic insulating film 12 exposed from the barrier film 14.

[0058] In addition, Figure 4 In the cross section including the strip-shaped portion BX shown, one of the first wiring layer 21 and the second wiring layer 22 may be omitted. At least one of the first wiring layer 21 and the second wiring layer 22 constitutes an X wiring WX arranged on the strip-shaped portion BX. Although not shown, in the cross section including the strip-shaped portion BY, at least one of the first wiring layer 21 and the second wiring layer 22 constitutes a Y wiring WY arranged on the strip-shaped portion BY.

[0059] Figure 5 It is a plan view showing a portion of the insulating base material 10 and the sealing film 15 in an enlarged manner.

[0060] In a plan view, the second opening OP2 surrounded by the outer edge 15E of the sealing film 15 overlaps with the first opening OP1 surrounded by the outer edge 10E of the insulating substrate 10. In addition, the sealing film 15 is formed to be wider than the insulating substrate 10, and the area of ​​the second opening OP2 is smaller than the area of ​​the first opening OP1. In other words, in a plan view, the outer edge 10E overlaps with the sealing film 15, and the outer edge 15E overlaps with the first opening OP1. The width WE from the outer edge 10E to the outer edge 15E is smaller than the width W10 of the insulating substrate 10, for example, 2.5 μm or more. The width WE is substantially the same on both sides sandwiching the insulating substrate 10.

[0061] Next, refer to Figures 6 to 9 Next, a method for manufacturing the above-mentioned flexible substrate 2 will be described.

[0062] First, in Figure 6 In the embodiment, as shown in the upper section, after forming the first inorganic insulating film 11 on the insulating substrate 10 made of polyimide, for example, the first wiring layer 21 patterned into a predetermined shape is formed on the first inorganic insulating film 11, and after forming the second inorganic insulating film 12, the second wiring layer 22 patterned into a predetermined shape is formed on the second inorganic insulating film 12. In addition, the layout of the first inorganic insulating film 11 and the second inorganic insulating film 12 can be performed together or separately.

[0063] Then, as shown in the middle stage, an organic insulating film 13 is formed over the entire surface. At this time, the organic insulating film 13 is also disposed between the adjacent first inorganic insulating films 11 and is in contact with the insulating substrate 10 .

[0064] Then, as shown in the next section, the organic insulating film 13 patterned into a predetermined shape is formed. When the organic insulating film 13 is patterned, a contact hole CH1 penetrating to the second wiring layer 22 (or the drain electrode) is formed. In addition, at this time, a portion of the organic insulating film 13A remains between the adjacent first inorganic insulating films 11.

[0065] Then, in Figure 7 In the embodiment, as shown in the upper section, a barrier film 14 patterned into a predetermined shape is formed. The barrier film 14 is formed so as to cover the entire organic insulating film 13 including the upper surface 13T and the side surface 13S. When the barrier film 14 is patterned, a contact hole CH2 penetrating to the second wiring layer 22 is formed. In addition, at this time, the organic insulating film 13A is exposed from the barrier film 14.

[0066] Then, as shown in the middle stage, the lower electrode E1 patterned into a predetermined shape is formed. The lower electrode E1 is formed so as to be in contact with the second wiring layer 22 in the contact hole CH2.

[0067] Then, as shown in the lower section, an organic photoelectric conversion layer OL is formed over the entire surface.

[0068] Then, in Figure 8 In the embodiment, as shown in the upper stage, after the upper electrode E2 is formed over the entire surface of the organic photoelectric conversion layer OL, a resist R1 patterned into a predetermined shape is formed on the upper electrode E2.

[0069] Then, as shown in the middle section, the upper electrode E2 exposed from the resist R1 is removed by etching using the resist R1 as a mask, and the organic photoelectric conversion layer OL exposed from the upper electrode E2 is removed by oxygen plasma treatment or ashing treatment. At this time, the surface layer of the organic insulating film 13A serving as the base of the organic photoelectric conversion layer OL between the adjacent first inorganic insulating films 11 is also removed. By reducing the film of the organic insulating film 13A in this way, the side surface 12S of the second inorganic insulating film 12 is exposed.

[0070] Then, as shown in the lower section, after the resist R1 is removed, a sealing film 15 is formed over the entire surface, and then a resist R2 patterned into a predetermined shape is formed on the sealing film 15. The sealing film 15 is formed to cover the sensor element SD and the barrier film 14 and to be in contact with the side surface 12S of the second inorganic insulating film 12.

[0071] Then, in Fig. 9In the embodiment, as shown in the upper section, the resist R2 is used as a mask to remove the sealing film 15 exposed from the resist R2, and further, the organic insulating film 13A exposed from the sealing film 15 is removed, and further, the insulating substrate 10 exposed from the organic insulating film 13A is also removed. Figure 5 As shown, a first opening OP1 defined by an outer edge 10E of the insulating substrate 10 and a second opening OP2 defined by an outer edge 15E of the sealing film 15 are formed.

[0072] Then, as shown in the next section, the resist R2 is removed to produce the flexible substrate 2.

[0073] As described above, according to the present embodiment, it is possible to provide a sensor device capable of suppressing a decrease in reliability.

[0074] In addition, several embodiments of the present invention are described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the scope of the main purpose of the invention. These embodiments and their variations are included in the scope or main purpose of the invention, and are included in the invention described in the claims and the scope of their equivalents.

Claims

1. A sensor device, wherein: have: An insulating substrate having a meandering strip-shaped portion and an island-shaped portion connected to the strip-shaped portion; a first inorganic insulating film disposed on the island portion; a first wiring layer disposed on the first inorganic insulating film; a second inorganic insulating film disposed on the first wiring layer; a second wiring layer disposed on the second inorganic insulating film; An organic insulating film, disposed on the second wiring layer; A barrier film, formed of an inorganic insulating material, covering the organic insulating film; a sensor element disposed on the barrier film; and The sealing film is formed of an inorganic insulating material and covers the sensor element. The sensor element is an organic photodiode. The sensor element has: A lower electrode is disposed on the barrier film; an organic photoelectric conversion layer, disposed on the lower electrode and in contact with the barrier film on the outer side of the lower electrode; and The upper electrode is arranged on the organic photoelectric conversion layer. The barrier film covers the side surfaces of the organic insulating film. The sealing film is in contact with the barrier film and the second inorganic insulating film on the outside of the sensor element, covers the upper electrode, and is in contact with the side surface of the organic photoelectric conversion layer. The first inorganic insulating film, the second inorganic insulating film, the organic insulating film, the barrier film, and the sealing film extend onto the strip-shaped portion. The organic photoelectric conversion layer and the upper electrode extend onto the barrier film overlapping the strip-shaped portion. The lower electrode is not arranged directly above the strip-shaped portion, The sealing film covers the upper electrode overlapping the strip-shaped portion and is in contact with a side surface of the organic photoelectric conversion layer.

2. The sensor device according to claim 1, wherein: The insulating substrate has a first opening surrounded by the strip-shaped portion. The sealing film has a second opening overlapping the first opening in a plan view, and an area of ​​the second opening is smaller than an area of ​​the first opening.

3. The sensor device according to claim 2, wherein: In a plan view, the outer edge of the sealing film overlaps with the first opening. The width from the outer edge of the insulating substrate to the outer edge of the sealing film is 2.5 μm or more.

4. The sensor device according to claim 1, wherein: The barrier film and the sealing film are formed of silicon nitride or aluminum oxide.

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