Light emitting device and method for manufacturing the same

Abstract

The present invention relates to a light-emitting device and a method for manufacturing the same. The light-emitting device comprises a stacked substrate, a first electrode layer, a light-emitting layer, a second electrode layer and a water-oxygen barrier sacrificial layer, wherein the water-oxygen barrier sacrificial layer comprises a metal matrix and a first doping element doped in the metal matrix, wherein the first doping element is selected from at least one of chromium, nickel, platinum, palladium, ruthenium and copper. The light-emitting device and the method for manufacturing the same are provided with a water-oxygen barrier sacrificial layer on the outer layer, the metal matrix has a certain water-oxygen barrier capability, the metal matrix contains the first doping element, and the doping of elements such as chromium and nickel can further improve the water-oxygen resistance provided by the water-oxygen barrier sacrificial layer, protect the functional layers in the light-emitting device, and effectively slow down the life attenuation rate of the light-emitting device.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a light-emitting device and a manufacturing method thereof. Background Art

[0002] At present, organic light-emitting diodes (OLED) and quantum dot light-emitting diodes (QLED) are two research hotspots of display technology. Organic light-emitting diodes (OLED) have excellent properties such as self-luminescence, simple structure, ultra-light and thin, fast response speed, wide viewing angle, low power consumption, and flexible display. Quantum dot light-emitting diodes (QLED) have the advantages of saturated color of emitted light, adjustable wavelength, and high quantum yield of photoluminescence and electroluminescence. The device structure of the above-mentioned light-emitting device is a typical sandwich structure. The simplest light-emitting device is a single-layer device consisting of a cathode layer, an anode layer, and a light-emitting layer sandwiched between two electrode side layers. The structure of the single-layer device is simple, but because the organic light-emitting layer material generally has a single carrier transport characteristic, that is, the organic light-emitting layer material has different transport characteristics for holes and electrons, it is easy to cause unbalanced carrier injection, which in turn leads to low luminous efficiency of the device. In the actual device structure design, in order to obtain better device performance, functional layers with different functions are usually introduced on the basic structure of the light-emitting device to balance the carriers. Figure 1 The structure of a conventional light-emitting device 30 is shown, which is composed of a substrate 31 , an anode layer 32 , a hole transport layer 33 , a light-emitting layer 34 , an electron transport layer 35 and a cathode layer 36 .

[0003] At present, most of the functional layers in light-emitting devices are sensitive to water and oxygen, and the penetration of water and oxygen will greatly reduce the life of the light-emitting device. In traditional packaging solutions, encapsulation glue with low water and oxygen permeability is generally used to encapsulate light-emitting devices. The lower the water and oxygen permeability, the lower the water and oxygen atmosphere in which the light-emitting device is located, thereby extending the actual service life of the light-emitting device. However, the encapsulation glue has limited ability to block water and oxygen. As the actual use time increases, the water and oxygen permeability of the encapsulation glue will continue to increase and eventually fail, causing the life of the light-emitting device to gradually decrease as the encapsulation glue ages. Summary of the invention

[0004] Based on this, it is necessary to provide a light-emitting device and a manufacturing method thereof to improve the water and oxygen resistance of the light-emitting device.

[0005] One of the objects of the present invention is to provide a light emitting device, the scheme is as follows:

[0006] A light-emitting device comprises a stacked substrate, a first electrode layer, a light-emitting layer, a second electrode layer and a water-oxygen barrier sacrificial layer, wherein the water-oxygen barrier sacrificial layer comprises a metal matrix and a first doping element doped in the metal matrix, wherein the first doping element is selected from at least one of chromium, nickel, platinum, palladium, ruthenium and copper.

[0007] In one embodiment, the material of the metal matrix is ​​selected from at least one of silver, copper, aluminum, iron, magnesium, platinum, gold, zinc, and molybdenum, and the material of the metal matrix is ​​different from the first doping element.

[0008] In one embodiment, the water and oxygen barrier sacrificial layer further includes a second doping element doped in the metal matrix, the second doping element is selected from at least one of molybdenum, titanium, carbon, nitrogen, vanadium, and phosphorus, and the material of the metal matrix is ​​different from the second doping element.

[0009] In one embodiment, the mass fraction of the first doping element in the water and oxygen blocking sacrificial layer is not greater than 10%. In one embodiment, the mass fraction of the first doping element in the water and oxygen blocking sacrificial layer is 0.01% to 10%.

[0010] In one embodiment, the thickness of the water-oxygen barrier sacrificial layer is 5 nm to 100 nm. In one embodiment, the thickness of the water-oxygen barrier sacrificial layer is 15 nm to 50 nm.

[0011] In one of the embodiments, the light emitting device further comprises a polymer film layer, and the polymer film layer is arranged on a side of the water and oxygen blocking sacrificial layer away from the second electrode layer.

[0012] In one embodiment, the polymer film layer includes a polymer matrix and inorganic nanoparticles doped in the polymer matrix.

[0013] In one embodiment, the material of the polymer matrix is ​​selected from at least one of polymethyl methacrylate, polyethylene, polysilane and epoxy resin.

[0014] In one embodiment, the inorganic nanoparticles are selected from at least one of zinc oxide, calcium oxide, magnesium oxide and zinc chloride.

[0015] In one embodiment, the mass fraction of the inorganic nanoparticles in the polymer film layer is not greater than 5%. In one embodiment, the mass fraction of the inorganic nanoparticles in the polymer film layer is 0.1% to 1%.

[0016] In one embodiment, the thickness of the polymer film layer is 10 nm to 300 nm. In one embodiment, the thickness of the polymer film layer is 50 nm to 150 nm.

[0017] In one embodiment, the light emitting device further comprises at least one of a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer.

[0018] In one embodiment, the light-emitting device includes a substrate, a first electrode layer, an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer, a second electrode layer, a water and oxygen barrier sacrificial layer and a polymer film layer which are stacked in sequence.

[0019] Another object of the present invention is to provide a method for manufacturing a light emitting device, the scheme is as follows:

[0020] A method for manufacturing a light emitting device comprises the following steps:

[0021] Providing a device body, the device body comprising a substrate, a first electrode layer, a light-emitting layer and a second electrode layer arranged in layers;

[0022] A water and oxygen blocking sacrificial layer is formed on the second electrode layer. The water and oxygen blocking sacrificial layer includes a metal matrix and a first doping element doped in the metal matrix. The first doping element is selected from at least one of chromium, nickel, platinum, palladium, ruthenium and copper.

[0023] Compared with the existing solutions, the above-mentioned light emitting device and the manufacturing method thereof have the following beneficial effects:

[0024] The above-mentioned light-emitting device and its manufacturing method are provided with a water and oxygen barrier sacrificial layer on the outer layer, the metal matrix has a certain water and oxygen barrier ability, the metal matrix contains a first doping element, the first doping element is selected from at least one of chromium, nickel, platinum, palladium, ruthenium, and copper, and the doping of elements such as chromium, nickel, platinum, palladium, ruthenium, and copper can further improve the water and oxygen resistance provided by the water and oxygen barrier sacrificial layer, protect the functional layers in the light-emitting device, and effectively slow down the life decay rate of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a schematic structural diagram of a traditional light-emitting device;

[0026] Figure 2 FIG. 4 is a schematic structural diagram of a light emitting device according to an embodiment.

[0027] Description of reference numerals:

[0028] 10. Light-emitting device; 110. Substrate; 120. First electrode layer; 130. Light-emitting layer; 140. Second electrode layer; 150. Water and oxygen barrier sacrificial layer; 160. Polymer film layer; 170. Electron injection layer; 180. Electron transport layer; 190. Hole transport layer; 200. Hole injection layer. DETAILED DESCRIPTION

[0029] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0030] It should be noted that when an element is referred to as being "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation method.

[0031] In the description of the present invention, it should be understood that the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0033] Please refer to Figure 2 As shown, the light emitting device 10 of one embodiment of the present invention comprises a stacked substrate 110, a first electrode layer 120, a light emitting layer 130, a second electrode layer 140 and a water and oxygen blocking sacrificial layer 150, wherein the water and oxygen blocking sacrificial layer 150 comprises a metal matrix and a first doping element doped in the metal matrix, wherein the first doping element is selected from at least one of chromium, nickel, platinum, palladium, ruthenium and copper. The light emitting device 10 is provided with the water and oxygen blocking sacrificial layer 150, and the metal matrix has a certain water and oxygen blocking ability, and the doping of elements such as chromium and nickel can further improve the water and oxygen resistance provided by the water and oxygen blocking sacrificial layer 150, protect the functional layers in the light emitting device 10, and effectively slow down the life decay rate of the light emitting device 10.

[0034] As a sacrificial layer, the water-oxygen blocking sacrificial layer 150 needs to have good water-oxygen blocking ability, and preferably has a large difference in critical concentration potential of water-oxygen absorption with the light-emitting device 10. Therefore, a metal with a work function close to the cathode work function of the light-emitting device 10 is selected.

[0035] In one example, the material of the metal matrix is ​​selected from at least one of silver, copper, aluminum, iron, magnesium, platinum, gold, zinc, and molybdenum, and the material of the metal matrix is ​​different from the first doping element.

[0036] In one example, the water and oxygen blocking sacrificial layer 150 further includes a second doping element doped in the metal matrix, the second doping element is selected from at least one of molybdenum, titanium, carbon, nitrogen, vanadium, and phosphorus, and the material of the metal matrix is ​​different from the second doping element. The addition of the second doping element can improve the toughness of the water and oxygen blocking sacrificial layer 150 to adapt to the application of the water and oxygen blocking sacrificial layer 150 in flexible displays. By selecting the type and doping ratio of the second doping element, the toughness and plasticity of the water and oxygen blocking sacrificial layer 150 can be specifically adjusted.

[0037] Preferably, in the water-oxygen barrier sacrificial layer 150, the mass fraction of the first doping element is not greater than 10%. In one example, the mass fraction of the first doping element in the water-oxygen barrier sacrificial layer 150 is 0.01% to 10%. In some specific examples, the mass fraction of the first doping element in the water-oxygen barrier sacrificial layer 150 is 0.05%, 0.1%, 0.2%, 0.4%, 0.6%, 1%, 3%, 5%, 7%, etc.

[0038] Since too thick a water-oxygen barrier sacrificial layer 150 will affect the light transmittance of the device, and too thin a water-oxygen barrier layer is easily damaged, and the damaged part is easily and quickly corroded by water and oxygen, preferably, the thickness range of the water-oxygen barrier sacrificial layer 150 is selected between 5nm and 100nm, which has little effect on the light transmittance of the device and can effectively prevent water and oxygen corrosion. In one example, the thickness of the water-oxygen barrier sacrificial layer 150 is 15nm to 50nm. In some specific examples, the thickness of the water-oxygen barrier sacrificial layer 150 is 20nm, 30nm, 50nm, 80nm, 90nm, etc.

[0039] like Figure 2 As shown, in one example, the light emitting device 10 further includes a polymer film layer 160 . The polymer film layer 160 is disposed on a side of the water and oxygen blocking sacrificial layer 150 away from the second electrode layer 140 .

[0040] Since the water and oxygen barrier sacrificial layer 150 is too thick and will affect the light transmittance, but the thin water and oxygen barrier sacrificial layer 150 is easily damaged, and the damaged part is easily and quickly corroded by water and oxygen. The light-emitting device 10 in the above example forms a polymer film layer 160 on the surface of the water and oxygen barrier sacrificial layer 150, which can reduce the probability of the water and oxygen barrier sacrificial layer 150 being damaged, thereby improving the reliability and device life of the light-emitting device 10, and can reduce the thickness requirement of the water and oxygen barrier sacrificial layer 150 to a certain extent.

[0041] In one example, the polymer film layer 160 includes a polymer matrix and inorganic nanoparticles doped in the polymer matrix.

[0042] The life of the light-emitting device 10 in the above example can be further improved after further adding nanoparticles to the polymer film layer 160. This may be because the inorganic nanoparticles have a larger specific surface area, which further expands the sacrificial interface that can adsorb water and oxygen in the film of the same thickness, thereby improving the life of the light-emitting device 10.

[0043] The material of the polymer matrix may be selected from but not limited to at least one of polymethyl methacrylate, polyethylene, polysilane and epoxy resin.

[0044] The inorganic nanoparticles may be selected from but not limited to at least one of zinc oxide, calcium oxide, magnesium oxide and zinc chloride.

[0045] Preferably, in the polymer film layer 160, the mass fraction of inorganic nanoparticles is not greater than 5%. Too high a mass fraction of inorganic nanoparticles will lead to a decrease in the film formation, transparency and other properties of the polymer film, thereby causing device degradation. In one example, the mass fraction of inorganic nanoparticles in the polymer film layer 160 is 0.1% to 5%. Further, in one example, the mass fraction of inorganic nanoparticles in the polymer film layer 160 is 0.1% to 1%. In some specific examples, the mass fraction of inorganic nanoparticles in the polymer film layer 160 is 0.5%, 1.5%, 2.5%, 3.5%, 4.5%, etc.

[0046] Preferably, the thickness of the polymer film layer 160 is 10nm to 300nm. If the polymer film layer 160 is too thin, the gain effect on the water and oxygen barrier film is not obvious, and if the polymer film is too thick, there is no more obvious gain. In one example, the thickness of the polymer film layer 160 is 50nm to 150nm. In some specific examples, the thickness of the polymer film layer 160 is 50nm, 100nm, 150nm, 200nm, 250nm, etc.

[0047] It is understandable that the light emitting device 10 may further include other functional layers. In one example, the light emitting device 10 further includes at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

[0048] exist Figure 2 In the specific example shown, the light-emitting device 10 includes a substrate 110, a first electrode layer 120, an electron injection layer 170, an electron transport layer 180, a light-emitting layer 130, a hole transport layer 190, a hole injection layer 200, a second electrode layer 140, a water and oxygen barrier sacrificial layer 150 and a polymer film layer 160, which are stacked in sequence.

[0049] The substrate 110 may be a rigid substrate, such as a glass substrate, or a flexible substrate 110, such as polyimide, polynorbornene, etc.

[0050] The first electrode layer 120 and the second electrode layer 140 can be made of conductive materials such as metallic silver, metallic aluminum, and ITO.

[0051] The electron injection layer 170 may be made of conventional electron injection materials, such as alkali metal salts, such as LiF, NaF, CsF, Cs2CO3, etc., or low work function metals, such as Mg, Mg:Ag alloy, Yb, etc.

[0052] In one example, the thickness of the electron injection layer 170 is 10 nm to 100 nm.

[0053] The electron transport layer 180 may be made of conventional electron transport materials. The electron transport material may be an inorganic semiconductor, such as ZnO, TiO2, SnO2, etc.; or an organic semiconductor, such as TPBi, Bphen, TmPyPb, B3PYMPM, BCP, etc. In QLED devices, the electron transport material may be n-type zinc oxide, etc.

[0054] In one example, the thickness of the electron transport layer 180 is 10 nm to 100 nm.

[0055] The hole injection layer 200 may be made of conventional hole injection materials, such as PEDOT:PSS.

[0056] In one example, the thickness of the hole injection layer 200 is 10 nm to 100 nm.

[0057] The hole transport layer 190 may be made of conventional hole transport materials, such as organic materials such as NPB and TFB, and inorganic materials such as NiO and MoO 3 , and composites thereof.

[0058] In one example, the thickness of the hole transport layer 190 is 10 nm to 100 nm.

[0059] The light emitting layer 130 may be made of quantum dot light emitting materials, organic light emitting materials, etc. depending on the device type.

[0060] In one example, the thickness of the light emitting layer 130 is 5 nm to 50 nm.

[0061] Furthermore, the present invention also provides a method for manufacturing a light emitting device, comprising the following steps:

[0062] Providing a device body, the device body comprising a substrate, a first electrode layer, a light-emitting layer and a second electrode layer arranged in layers;

[0063] A water and oxygen blocking sacrificial layer is formed on the second electrode layer. The water and oxygen blocking sacrificial layer includes a metal matrix and a first doping element doped in the metal matrix. The first doping element is selected from at least one of chromium, nickel, platinum, palladium, ruthenium and copper.

[0064] In one example, the method for manufacturing a light-emitting device further includes the step of: manufacturing a polymer film layer on a side of the water and oxygen barrier sacrificial layer away from the second electrode layer.

[0065] The above-mentioned light-emitting device and its manufacturing method are provided with a water and oxygen barrier sacrificial layer on the outer layer, the metal matrix has a certain water and oxygen barrier ability, the metal matrix contains a first doping element, and the first doping element is selected from at least one of chromium, nickel, platinum, palladium, ruthenium, and copper. The doping of elements such as chromium, nickel, platinum, palladium, ruthenium, and copper can further improve the water and oxygen resistance provided by the water and oxygen barrier sacrificial layer, protect the functional layers in the light-emitting device, and effectively slow down the life decay rate of the light-emitting device.

[0066] Compared with replacing all functional layers with anti-water and oxygen functional layers, the solution of the present invention is simple to operate, low in cost, easy to control, and easy to industrialize.

[0067] Specific embodiments are provided below to illustrate the present invention, but the present invention is not limited to the following embodiments. It should be understood that the attached claims summarize the scope of the present invention. Under the guidance of the concept of the present invention, those skilled in the art should realize that certain changes made to the various embodiments of the present invention will be covered by the spirit and scope of the claims of the present invention.

[0068] Example 1

[0069] The device 1 provided in this embodiment includes a substrate, a cathode layer, a light-emitting layer, a hole transport layer, a hole injection layer, an anode layer, and a water-oxygen barrier sacrificial layer stacked in sequence. The substrate is a glass substrate, the cathode material is ITO-Ag, the light-emitting layer material is CdSe / ZnS red quantum dots, the hole transport layer material is NPD, the hole injection layer material is MoO3, and the anode is an Ag electrode. The water-oxygen barrier sacrificial layer includes a metallic silver matrix and nickel element doped therein, the doping ratio of the nickel element is 0.01%, and the thickness of the water-oxygen barrier sacrificial layer is 5nm.

[0070] Example 2

[0071] The device 2 provided in this embodiment is substantially the same as the device 1 of embodiment 1, except that the nickel doping ratio in the water and oxygen barrier sacrificial layer is 0.1%.

[0072] Example 3

[0073] The device 3 provided in this embodiment is substantially the same as the device 1 of embodiment 1, except that the nickel doping ratio in the water and oxygen barrier sacrificial layer is 1%.

[0074] Example 4

[0075] The device 4 provided in this embodiment is substantially the same as the device 1 of embodiment 1, except that the nickel doping ratio in the water and oxygen barrier sacrificial layer is 10%.

[0076] Example 5

[0077] The device 5 provided in this embodiment includes a substrate, a cathode layer, a light-emitting layer, a hole transport layer, a hole injection layer, an anode layer, a water-oxygen barrier sacrificial layer and a polymer film layer stacked in sequence. The substrate is a glass substrate, the material of the cathode is ITO-Ag, the material of the light-emitting layer is CdSe / ZnS red quantum dots, the material of the hole transport layer is NPD, the material of the hole injection layer is MoO3, and the anode is an Ag electrode. The water-oxygen barrier sacrificial layer includes a metallic silver matrix and nickel elements doped therein, the doping ratio of the nickel element is 1%, and the thickness of the water-oxygen barrier sacrificial layer is 5nm. The material of the polymer film layer is epoxy resin, and the polymer film layer is 5nm.

[0078] Example 6

[0079] The device 6 provided in this embodiment is substantially the same as the device 5 of embodiment 5, except that the thickness of the polymer film layer is 50 nm.

[0080] Example 7

[0081] The device 7 provided in this embodiment is substantially the same as the device 5 of embodiment 5, except that the thickness of the polymer film layer is 150 nm.

[0082] Example 8

[0083] The device 8 provided in this embodiment is substantially the same as the device 5 of embodiment 5, except that the thickness of the polymer film layer is 300 nm.

[0084] Example 9

[0085] The device 9 provided in this embodiment includes a substrate, a cathode layer, a light-emitting layer, a hole transport layer, a hole injection layer, an anode layer, a water-oxygen barrier sacrificial layer and a polymer film layer stacked in sequence. The substrate is a glass substrate, the material of the cathode is ITO-Ag, the material of the light-emitting layer is CdSe / ZnS red quantum dots, the material of the hole transport layer is NPD, the material of the hole injection layer is MoO3, and the anode is an Ag electrode. The water-oxygen barrier sacrificial layer includes a metallic silver matrix and nickel elements doped therein, the doping ratio of the nickel element is 1%, and the thickness of the water-oxygen barrier sacrificial layer is 5nm. The material of the polymer film layer is epoxy resin and ZnO nanoparticles dispersed in the epoxy resin, and the polymer film layer is 5nm.

[0086] Example 10

[0087] The device 10 provided in this embodiment is substantially the same as the device 9 of embodiment 9, except that the mass fraction of the ZnO nanoparticles in the polymer film layer is 1%.

[0088] Embodiment 11

[0089] The device 11 provided in this embodiment is substantially the same as the device 9 of embodiment 9, except that the mass fraction of the ZnO nanoparticles in the polymer film layer is 0.1%.

[0090] Example 12

[0091] The device 12 provided in this embodiment is substantially the same as the device 9 of embodiment 9, except that the mass fraction of the ZnO nanoparticles in the polymer film layer is 0.01%.

[0092] Control group 1

[0093] The device 13 provided by the control group includes a substrate, a cathode layer, a light-emitting layer, a hole transport layer, a hole injection layer, an anode layer, and a water and oxygen barrier sacrificial layer stacked in sequence. The substrate is a glass substrate, the cathode material is ITO-Ag, the light-emitting layer material is CdSe / ZnS red quantum dots, the hole transport layer material is NPD, the hole injection layer material is MoO3, and the anode is an Ag electrode.

[0094] Control group 2

[0095] The device 14 provided by the control group includes a substrate, a cathode layer, a light-emitting layer, a hole transport layer, a hole injection layer, an anode layer and a metallic silver surface layer stacked in sequence. The substrate is a glass substrate, the cathode material is ITO-Ag, the light-emitting layer material is CdSe / ZnS red quantum dots, the hole transport layer material is NPD, the hole injection layer material is MoO3, and the anode is an Ag electrode. The thickness of the metallic silver surface layer is 5nm.

[0096] Control group 3

[0097] The device 15 provided by this control group is substantially the same as the device 14 of the control group 2, except that the thickness of the metallic silver surface layer is 15 nm.

[0098] Control group 4

[0099] The device 16 provided by this control group is substantially the same as the device 14 of the control group 2, except that the thickness of the metallic silver surface layer is 100 nm.

[0100] The device lifespans of the above devices 1 to 16 were tested, and the results are shown in Table 1.

[0101] Table 1

[0102]

[0103]

[0104] From the above results, it can be seen that the water-oxygen barrier sacrificial layer can significantly improve the device life of the light-emitting device, but if the water-oxygen barrier sacrificial layer is designed to be too thin, it is difficult to avoid film defects such as scratches on the film layer, and the device life will be significantly reduced. After coating the polymer film layer, the device life is relatively stable. This is because the stress range that the polymer film layer can withstand is relatively large, and its surface scratches have little effect on the water and oxygen absorption capacity of the film layer. If the polymer film layer is too thin, its gain effect on the water-oxygen barrier film is not obvious, and if the polymer film is too thick, there is no more obvious gain. After further adding ZnO nanoparticles to the polymer film layer, the device life can be further improved. This may be because the nanoparticles have a larger specific surface area, and the sacrificial interface that can adsorb water and oxygen in the film of the same thickness is further expanded, thereby improving the device life of the light-emitting device.

[0105] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0106] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A light emitting device, characterized in that: The invention comprises a stacked substrate, a first electrode layer, a light-emitting layer, a second electrode layer and a water-oxygen barrier sacrificial layer, wherein the first electrode layer is a cathode, the second electrode layer is an anode, the water-oxygen barrier sacrificial layer comprises a metal matrix and a first doping element doped in the metal matrix, the first doping element is selected from at least one of chromium, nickel, platinum, palladium, ruthenium and copper; in the water-oxygen barrier sacrificial layer, the mass fraction of the first doping element is not greater than 10%; the water-oxygen barrier sacrificial layer also comprises a second doping element doped in the metal matrix, the second doping element is selected from at least one of molybdenum, titanium, carbon, nitrogen, vanadium and phosphorus, and the material of the metal matrix is ​​different from the second doping element.

2. The light emitting device according to claim 1, characterized in that: The material of the metal matrix is ​​selected from at least one of silver, copper, aluminum, iron, magnesium, platinum, gold, zinc, and molybdenum, and the material of the metal matrix is ​​different from the first doping element.

3. The light emitting device according to claim 1, characterized in that: In the water and oxygen blocking sacrificial layer, the mass fraction of the first doping element is no more than 1%.

4. The light emitting device according to claim 1, characterized in that: The thickness of the water and oxygen barrier sacrificial layer is 5nm-100nm.

5. The light emitting device according to claim 1, characterized in that: The thickness of the water and oxygen barrier sacrificial layer is 15nm-50nm.

6. The light emitting device according to any one of claims 1 to 5, characterized in that: The light emitting device further comprises a polymer film layer, and the polymer film layer is arranged on a side of the water and oxygen blocking sacrificial layer away from the second electrode layer.

7. The light emitting device according to claim 6, characterized in that: The polymer film layer includes a polymer matrix and inorganic nanoparticles doped in the polymer matrix.

8. The light emitting device according to claim 7, characterized in that: The material of the polymer matrix is ​​selected from at least one of polymethyl methacrylate, polyethylene, polysilane and epoxy resin.

9. The light emitting device according to claim 7, characterized in that: The inorganic nanoparticles are selected from at least one of zinc oxide, calcium oxide, magnesium oxide and zinc chloride.

10. The light emitting device according to claim 7, characterized in that: In the polymer film layer, the mass fraction of the inorganic nanoparticles is no more than 5%.

11. The light emitting device according to any one of claims 7 to 10, characterized in that: The thickness of the polymer film layer is 10nm-300nm.

12. The light emitting device according to any one of claims 1 to 5 and 7 to 10, characterized in that: The light emitting device further comprises at least one of a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer.

13. A method for manufacturing a light emitting device, characterized in that: The following steps are involved: Providing a device body, the device body comprising a substrate, a first electrode layer, a light-emitting layer and a second electrode layer arranged in layers, the first electrode layer being a cathode and the second electrode layer being an anode; A water-oxygen barrier sacrificial layer is formed on the second electrode layer, wherein the water-oxygen barrier sacrificial layer comprises a metal matrix and a first doping element doped in the metal matrix, wherein the first doping element is selected from at least one of chromium, nickel, platinum, palladium, ruthenium, and copper; in the water-oxygen barrier sacrificial layer, the mass fraction of the first doping element is not greater than 10%; the water-oxygen barrier sacrificial layer also comprises a second doping element doped in the metal matrix, wherein the second doping element is selected from at least one of molybdenum, titanium, carbon, nitrogen, vanadium, and phosphorus, and the material of the metal matrix is ​​different from the second doping element.

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