Test device, control device system and method for testing

Abstract

A test device (10) for testing electrical structure elements (40-48) and / or printed conductor structures (50-58) is proposed, wherein the test device (10) has a plurality of test positions (20-28) for respectively receiving an electrical structure element (40-48) and / or respectively receiving a printed conductor structure (50-58), wherein the test device (10) further has a selection mechanism for selecting one of the test positions (20-28), wherein the test device (10) has electrical lines arranged in rows (11-13) and electrical lines arranged in columns (16-19) for supplying an alternating voltage to an electrical structure element (40-48) arranged at the selected test position (20-28) and / or to a printed conductor structure (50-58) arranged at the selected test position (20-28), wherein the test device (10) has Z diodes (30-38) and a signal generator (50), wherein the Z diodes (30-38) are for electrically connecting a respective electrical structure element (40-48) and / or a respective printed conductor structure (50-58) at a respective test position (20-28) via one of the Z diodes (30-38) with one of the rows (11-13) of electrical lines, wherein the signal generator (50) is configured for generating a test signal having a voltage signal which is a sum of a rectangular signal and a waveform signal, in particular a sinusoidal signal, and wherein the maximum voltage of the rectangular signal corresponds at least to the breakdown voltage of the respective Z diode (30-38) of the selected test position (20-28), characterized by an electromigration mechanism (90) for loading a direct current voltage signal onto the electrical structure element (40-48) and / or the printed conductor structure (50-58) in order to generate an electromigration in the electrical structure element (40-48) and / or the printed conductor structure (50-58), wherein the voltage of the direct current voltage signal is greater than the breakdown voltage of the respective Z diode (30-38) of the selected test position (20-28).

Description

TECHNICAL FIELD

[0001] The invention relates to a testing device, to a control device system and to a method for testing. BACKGROUND

[0002] Up to now, error patterns in electronic structure elements or conductor track structures, which are caused by humidity due to electromigration, are often difficult to predict and can only be studied in the laboratory with great effort. This often makes it particularly difficult to implement a knowledge-based design matching based on clear calculation rules, which suppresses undesired error patterns in electronic structure elements or conductor track structures. Often, it is similarly difficult to develop a model for such a cause-related error structure on the basis of experiments with a large number of statistics. SUMMARY

[0003] Against this background, a testing device or a control device system or a method for testing according to the invention is proposed with the solution presented here. Advantageous refinements and improvements of the solution presented here result from the description and are described in the disclosure.

[0004] Advantages of the invention.

[0005] Embodiments of the invention can allow, in an advantageous manner, the investigation of electromigration in a plurality of electronic structure elements and / or conductor track structures within a short time interval.

[0006] According to a first aspect of the application, a test device for testing electrical structure elements and / or printed conductor structures, in particular comb structures, is proposed, wherein the test device has a plurality of test positions for respectively receiving an electrical structure element and / or for respectively receiving a printed conductor structure, wherein the test device further has a selection mechanism for selecting one of the test positions, wherein the test device has electrical lines arranged in rows and electrical lines arranged in columns for supplying an alternating voltage to an electrical structure element arranged at the selected test position and / or to a printed conductor structure arranged at the selected test position, wherein the test device has Z diodes for electrically connecting a respective electrical structure element and / or a respective printed conductor structure at a respective test position via one of the Z diodes with one of the rows of electrical lines, and the test device has a signal generator, wherein the signal generator is configured for generating a test signal having a voltage signal which is a sum of a rectangular signal and a waveform signal, in particular a sinusoidal signal, and wherein the maximum voltage of the rectangular signal corresponds at least to the breakdown voltage of the respective Z diode of the selected test position, characterized by an electromigration mechanism for loading a direct voltage signal onto the electrical structure element and / or the printed conductor structure in order to generate an electromigration in the electrical structure element and / or the printed conductor structure, wherein the voltage of the direct voltage signal is greater than the breakdown voltage of the respective Z diode of the selected test position.

[0007] An advantage here is that the electromigration in a plurality of electrical structure elements or printed conductor structures can be investigated within very short time intervals. Thus, a very high statistics of experimental data can be generated. In this way, by loading a direct voltage between the rows (Zeile) and the columns (Reihe) which is greater than the breakdown voltage of the Z diodes, an electromigration can be generated in a plurality of electrical structure elements and / or printed conductor structures which can then be investigated by means of the test signal. The electrical structure elements and / or printed conductor structures can be measured individually by means of the lines (Linie) and the columns (Spalte) after the loading of the direct voltage for generating the electromigration. It is conceivable that the electrical structure elements or printed conductor structures are structurally identical to one another. However, it is also conceivable that the electrical structure elements or printed conductor structures are slightly different from one another in terms of their structural type, whereby dynamics and / or non-linearities can be investigated when the electromigration is generated in the electrical structure elements or printed conductor structures.

[0008] According to a second aspect of the application, a control device system for a motor vehicle is proposed, wherein the control device system has a control device for controlling at least some parts of the motor vehicle and a test device as described above, the control device system being designed in such a way that a higher and / or longer-lasting direct voltage signal and / or a higher field strength of an electric field (for example by a smaller geometric spacing) is applied to the electric structure elements and / or the track structure of the matrix structure compared to the case of the electric structure elements and / or the track structure loaded to the control device.

[0009] It is advantageous here that the matrix structure can be used as a sacrificial structure and / or as a measuring structure for reliable failure prediction in the control device and thus for failure prevention of the control device, in particular for autonomous motor vehicles. The matrix structure can be placed at a location where the surroundings are similar to those in the control device. The matrix structure can be placed at a location where the environmental parameters are particularly friendly to electromigration. Thus, the electric structure elements or the track structure of the matrix structure fail before the electric structure elements or the track structure of the control device fail. The driver of the motor vehicle can thus be warned in good time that a failure of the control device is imminent. The electric field applied to the matrix structure or the electric structure elements or the track structure can be applied according to vehicle type characteristics, that is to say environmental variables influenced by the motor vehicle architecture or motor vehicle structure, such as the average ambient temperature, etc., can be included in the predictive failure calculation.

[0010] According to a third aspect of the application, a method for testing electrical structure elements and / or arranged printed conductor structures arranged at test positions of a test device, in particular a test device as described above, is proposed, wherein the test device has a plurality of test positions for respectively receiving an electrical structure element and / or for respectively receiving a printed conductor structure and has rows of electrical lines and columns of electrical lines for supplying an alternating voltage to electrical structure elements arranged at selected test positions and / or to printed conductor structures arranged at selected test positions, wherein the test device has Z diodes for electrically connecting the respective electrical structure element and / or the respective printed conductor structure at the respective test position via one of the Z diodes with one of the rows of electrical lines, wherein the method comprises the following steps: loading a direct voltage signal onto one or more electrical structure elements and / or one or more printed conductor structures by means of the rows of electrical lines and the columns of electrical lines for generating an electromigration in the respective electrical structure element and / or in the respective printed conductor structure, wherein the voltage of the direct voltage signal is greater than the breakdown voltage of the respective Z diode of the electrical structure element and / or of the printed conductor structure; selecting a test position by means of the rows of electrical lines and the columns of electrical lines; and supplying a test signal to the electrical structure element arranged at the selected test position and / or to the printed conductor structure arranged at the selected test position, the test signal having a voltage signal which is the sum of a rectangular signal and a waveform signal, in particular a sinusoidal signal, wherein the maximum voltage of the rectangular signal corresponds at least to the breakdown voltage of the Z diode of the selected test position.

[0011] It is advantageous here that by means of this method it is possible to investigate the electromigration in a plurality of electrical structure elements or printed conductor structures within a very short period of time. Thus, a very high statistical amount of experimental data can be generated. By loading a direct voltage between the rows and the columns which is higher than the breakdown voltage of the Z diodes, it is possible to generate an electromigration in a plurality of electrical structure elements or printed conductor structures, which is then investigated by means of the test signal. By means of the method, the electrical structure elements or the printed conductor structures can be measured individually by means of the rows and the columns after loading the direct voltage for generating the electromigration. It is conceivable that the electrical structure elements or the printed conductor structures are structurally identical to one another.

[0012] It is also possible to use the electrical structure elements tested by the method described above and / or the conductor track structures tested by the method described above as sacrificial structures for control devices. In this way, it is possible to provide timely warnings of impending failure of the control devices. For example, it is possible to select electrical structure elements or conductor track structures by means of the method, which are particularly resistant or capable of being resistant to electromigration in terms of their construction. Such electrical structure elements or such conductor track structures can also be part of or be incorporated into control devices in order to obtain control devices which are particularly capable of being resistant to electromigration.

[0013] The ideas relating to the embodiments of the application can be considered, inter alia, to be based on the concepts and recognitions described below.

[0014] The application is based on the basic idea of investigating electromigration in a plurality of electrical structure elements and / or conductor track structures by means of a matrix structure.

[0015] According to an embodiment of the testing device, the testing device further comprises a camera for detecting the electromigration structures of the electrical structure elements and / or conductor track structures. It is advantageous here that, in addition to electrical measurements, the resulting electromigration structures can be detected and stored in an optically easy manner. In particular, the optically detected electromigration structures can be used together with environmental variables for optimizing the chemical material composition of the electrical structure elements and / or conductor track structures in order to minimize electromigration.

[0016] According to an embodiment of the testing device, the testing device further comprises a classification mechanism for classifying the electromigration structures detected by the camera. It is advantageous here that the detected electromigration structures can be easily investigated or analyzed in a statistical manner. Thus, in order to minimize electromigration, the construction of the electrical structure elements or conductor track structures can be easily analyzed and improved in a technical manner.

[0017] According to an embodiment of the testing device, the classification mechanism is configured for classifying the electromigration structures detected by the camera by means of machine learning. It is advantageous here that the machine learning system can provide suggestions for improving the construction of the electrical structure elements or conductor track structures in order to reduce electromigration. This can enable novel design solutions or design changes.

[0018] According to an embodiment of the testing device, the classification mechanism is configured for assigning the electromigration structures detected by the camera to a fractal element and / or to a dimension of a respective fractal. It is advantageous here that the number of classes for the classification can be greatly reduced and thus a statistical analysis can be particularly easily implemented.

[0019] According to an embodiment of the method, the electromigration structures of the electronic structure elements and / or the printed conductor structures are detected optically. The advantage here is that, in addition to the electrical measurement of the electronic structure elements or printed conductor structures, changes in the electronic structure elements or printed conductor structures are detected optically and can be stored. In particular, the optically detected electromigration structures can be used together with environmental variables to optimize the chemical material composition of the electronic structure elements and / or printed conductor structures in order to minimize electromigration.

[0020] According to an embodiment, the optically detected electromigration structures are classified, in particular by means of a machine learning. The advantage here is that the electromigration structures can be statistically technically easily investigated or analyzed. Thus, the construction of the electronic structure elements or printed conductor structures can be technically easily analyzed and improved in order to minimize electromigration. By means of a machine learning system, suggestions for improving the construction of the electronic structure elements and / or printed conductor structures can be generated in order to reduce electromigration. The use of a machine learning system thus enables novel design solutions or design changes of the electronic structure elements and / or printed conductor structures.

[0021] According to an embodiment of the method, the optically detected electromigration structures are assigned to a fractal element, in particular a Julia set, and / or respectively to a dimension of the fractal. The advantage here is that the number of classes of the classification is greatly reduced by this method. Thus, a statistical analysis of the data can be particularly easily implemented.

[0022] According to an embodiment of the method, at least a portion of the electronic structure elements and / or printed conductor structures is constructed differently. The advantage here is that a plurality of different design / construction types of the electronic structure elements and / or printed conductor structures, in particular slight variations of the basic construction of the electronic structure elements or printed conductor structures, can be investigated or tested very quickly within a short time. In particular if the electronic structure elements and / or printed conductor structures differ from one another in their construction type respectively slightly, investigations of dynamics and / or non-linearity can be made when electromigration occurs in the electronic structure elements and / or printed conductor structures.

[0023] It is pointed out that some of the possible features and advantages of the present application are described here with reference to different embodiments of the test device or method for testing. The person skilled in the art recognizes that the features can be combined, adapted or replaced in a suitable manner in order to realize further embodiments of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0024] Embodiments of the present application will be described below with reference to the accompanying drawings, in which the drawings and the description thereto merely illustrate the application and are not to be construed as limiting the application.

[0025] Figure 1 a schematic plan view of a test device according to a first embodiment of the application is shown;

[0026] Figure 2 a diagram of test signals and resulting currents when testing an electronic structure element is shown; and

[0027] Figure 3 a schematic plan view of a test device according to a second embodiment of the application is shown.

[0028] The drawings are merely schematic and are not drawn to scale. Identical reference signs denote like or analogous features throughout the figures. DETAILED DESCRIPTION

[0029] Figure 1 a schematic plan view of a test device according to a first embodiment of the application is shown. Figure 2 a diagram of test signals and resulting currents when testing an electronic structure element and / or a printed conductor structure is shown.

[0030] The test device 10 is configured for testing or inspecting a plurality of electrical structure elements 40-48 and / or printed conductor structures. The electrical structure elements 40-48 can be capacitors, for example, as is shown in Figure 1 Coils, resistors, inductances, etc. can also be used as electrical structure elements 40-48.

[0031] The test device 10 has a plurality of, for example, tens, hundreds or thousands of test locations 20-28. Each test location 20-28 is configured for receiving an electrical structure element 40-48. It is also conceivable for a plurality of electrical structure elements 40-48 to be received at the test locations 20-28.

[0032] The test device 10 has a matrix structure, wherein the test device 10 has rows 11-13 of electrical conductors and columns 16-19 of electrical conductors. Each test location 20-28 is electrically connected to exactly one row 11-13 and to exactly one column 16-19, respectively. Each test location 20-28 is connected to the rows 11-13 of electrical conductors via Z diodes 30-38, while each test location 20-28 is connected to the columns 16-19 of electrical conductors without any other elements therebetween, that is, directly or straight. In this way, exactly one test location 20-28 supplied with an alternating voltage can be selected by selecting or supplying the respective rows 11-13 and columns 16-19 with an alternating voltage accordingly.

[0033] The rows 11-13 are exchangeable with the columns 16-19, that is to say, the electrical conductors referred to as "rows" in the present application can be "columns" and vice versa.

[0034] At each test position 20-28, the electrical structure element 40-48 can be arranged in the test device 10 and connected to the rows 11-13 and columns 16-19 of electrical conductors.

[0035] The rows 11-13 of the test device 10 are electrically connected to a signal generator 50 of the test device 10, which generates an alternating voltage in the form of a test signal. The columns 16-19 are connected to ground via shunts 60, which are used to measure the current flowing through the selected test position 20-28 or the selected electrical structure element 40-48. The measured current is fed to an analog-digital converter 70. The values output by the analog-digital converter 70 are fed to an evaluation device 80, which determines the impedance of the electrical structure element 40-48 and / or the phase difference between current and voltage and / or other characteristics from the alternating voltage generated by the signal generator 50 and the current measured by means of the shunts 60.

[0036] In addition, the test device 10 has a selection mechanism, which selects a test position 20-28 and thereby an electrical structure element 40-48 by electrically connecting the respective row 11-13 and column 16-19 to the signal generator 50 and the shunts 60.

[0037] The test signal is a sum signal composed of a rectangular voltage, also referred to as a rectangular signal, and a waveform voltage, also referred to as a waveform signal, for example a sinusoidal voltage or a sinusoidal signal, wherein the rectangular and waveform signals have the same or identical frequency.

[0038] The rectangular signal has a high value or maximum value, which corresponds to the breakdown voltage of the Z diode 30-38 of the selected position. Typically, all Z diodes 30-38 of the test device 10 have the same breakdown voltage (for example +9.0 V). The low value or minimum value of the rectangular signal corresponds to the on-flow voltage of the Z diode 30-38 of the selected position. Typically, all Z diodes 30-38 of the test device 10 have the same on-flow voltage (for example -0.7 V).

[0039] The rectangular signal is thus adjusted so that the Z diodes 30-38 are turned on at corresponding moments depending on the kind of phase shift of the electrical structure elements 40-48 (for example, the phase shift in a capacitor is different from the phase shift in a coil), so that the current flowing through the electrical structure elements 40-48 has a shape corresponding to the waveform of the test signal at the selected test locations 20-28 (that is, for a sinusoidal voltage signal, the current flowing through the electrical structure elements 40-48 has a sinusoidal shape at the selected test locations 20-28 or electrical structure elements 40-48).

[0040] A sinusoidal signal is added to the rectangular signal in order to determine or obtain the test signal. The sinusoidal voltage signal can be said to generate a sinusoidal current, and the rectangular signal is only loaded in order to put the Z diodes 30-38 of the selected test locations 20-28 into the conducting state. The Z diodes 30-38 of the other test locations 20-28 or of the test locations 20-28 that are not selected remain in the non-conducting state, so that no current flows through the electrical structure elements 40-48 of the test locations 20-28 that are not selected.

[0041] The maximum value of the sinusoidal voltage has a value such that the maximum voltage of the test signal (that is, the maximum value of the rectangular signal plus the maximum value of the sinusoidal voltage) is lower than double or twice the value of the breakdown voltage of the Z diodes 30-38. In this way, it is ensured that the voltage is only loaded on the electrical structure elements 40-48 of the selected locations, while the other Z diodes 30-38 remain non-conducting.

[0042] The analysis device 80 is able to determine the real and imaginary parts of the current and thus the impedance, the phase shift, etc. of the electrical structure elements 40-48.

[0043] Figure 2 A graph is shown of the test signal (that is, the voltage signal or test signal) and the resulting current in the electrical structure elements 40-48 (or in the shunt 60) in the method according to the application. The test signal or test voltage signal is shown as a solid line, while the current measured by means of the shunt 60 is shown as a dashed line. Exemplary values are shown for a capacitor. The phase shift between the voltage and the current is thus 270°. Figure 1

[0044] In the following, the test signal is a sinusoidal signal, but it is also possible to use other test signals, for example, a square wave signal. Figure 2 ​The curve of the voltage (solid line) and the resulting measured current (dashed line) are depicted from left to right. At first, the rectangular signal of the test signal is at its maximum and the sinusoidal signal of the test signal is at its minimum. Therefore, the Z-diode 30-38 is conducting, because the breakdown voltage is reached by the rectangular signal (+9.0 V). The sinusoidal signal of the excitation voltage or test signal is slowly rising. Here, the capacitor is charged. When the maximum of the sinusoidal voltage or sinusoidal signal of the test signal is reached, the rectangular signal of the test signal is switched to its minimum (-0.7 V), which corresponds to the on-voltage of the Z-diode 30-38. Therefore, here a step is generated in the solid line, because the voltage drops within a very short time. Subsequently, the sinusoidal voltage of the test signal is falling again. Now, the capacitor is discharged, while the rectangular voltage of the test signal remains at its minimum. When the minimum of the sinusoidal signal of the test signal is reached, the rectangular signal is switched to its maximum (+9.0 V) again. Now, the capacitor is charged again.

[0045] When the rectangular signal is switched from the maximum to the minimum and when the rectangular signal is switched from the minimum to the maximum with less intensity, deviations from the sinusoidal shape occur in the measured current. These deviations can be eliminated by a Fourier transformation in the evaluation device 80. Other smaller deviations from the sinusoidal shape in the measured current signal can also be eliminated by the Fourier transformation. The impedance of the capacitor and / or the phase shift between the current and the voltage is determined from the measured current signal by the evaluation device 80. The determined values can be compared with reference values in order to determine the quality or the grade of the corresponding electrical structure element 40-48.

[0046] The electrical structure elements 40-48 can comprise, for example, electronic circuits.

[0047] The test device 10 furthermore comprises an electromigration mechanism 90. The electromigration mechanism 90 loads a direct current voltage to one or more electrical structure elements 40-48. For example, a potential difference or voltage can be loaded between the rows 11-13 and the columns 16-19. This means that all rows 11-13 have a first potential and all columns 16-19 have a second potential, wherein the first potential is different from the second potential.

[0048] The applied direct voltage is greater than the breakdown voltage of the Z-diodes 30-38 or Zener diodes. As a result, the Zener diodes become conductive and a direct voltage is applied to the electronic structure elements 40-48. The applied direct voltage can be significantly greater than the breakdown voltage of the Z-diodes 30-38 or Zener diodes, for example at least twice as great, three times as great or more. Thus, by means of the direct voltage not only are the Z-diodes 30-38 or Zener diodes switched into conduction, but also a direct voltage is applied to the electronic structure elements 40-48.

[0049] In this way, by applying a (pure) direct voltage (typically without an alternating voltage component) to the electronic structure elements 40-48, electromigration is induced in the electronic structure elements 40-48. Electromigration can be induced simultaneously in a plurality of electronic structure elements 40-48.

[0050] By means of subsequent testing or measuring of the complex impedance of the respective electronic structure elements 40-48, investigations or analyses can be carried out after the induction of electromigration by means of the application of a direct voltage or after the generation of electromigration. Failures which are caused by electromigration can be identified technically easily, in particular.

[0051] The magnitude of the direct voltage influences the strength of the electromigration. A higher direct voltage leads to stronger electromigration than a lower direct voltage.

[0052] The direct voltage can be applied to the electronic structure elements 40-48 of the matrix structure simultaneously for the same length of time or for a predefined duration. For example, in order to induce electromigration in the electronic structure elements 40-48, a direct voltage can be applied for several minutes, for example approximately 2 minutes or approximately 5 minutes. It is also conceivable for the direct voltage to be applied to different electronic structure elements 40-48 for different lengths of time.

[0053] The electronic structure elements 40-48 can each be identical in structure to one another. Very large statistics can thereby be generated. Thus, only rarely occurring failures can also be identified and analysed. The number of electronic structure elements 40-48 can be, for example, 4000, which can be tested in a matrix structure or whose electromigration can be investigated by means of a matrix structure.

[0054] It is also conceivable for the electronic structure elements 40-48 to differ slightly in their construction and / or in their material composition. Thereby, a series test can be carried out in order to determine which changes increase or decrease the susceptibility to electromigration.

[0055] It is possible that the test device 10 has one optical camera or a plurality of optical cameras, for example a microscope camera. The camera or the cameras optically detect electromigration of the electronic structure elements 40-48.

[0056] The test device 10 can comprise a classification mechanism which classifies the detected optical changes or electromigration structures of the electronic structure elements 40-48 and / or the measured impedance values of the electronic structure elements 40-48. On the basis of the classification, a statistical analysis can be carried out. It is thus possible, for example, to determine under which conditions electromigration occurs how frequently or how intensively and / or which types of electromigration structures are produced. Furthermore, it can be determined what types of faults this leads to.

[0057] The environmental conditions, such as dew / moisture or air humidity, temperature and / or ionic contamination, can be adjusted purposefully and the values of the environmental conditions can be stored and analysed together with the test or measurement values.

[0058] The classification mechanism can use machine learning, in particular neural networks, for classifying electromigration of the electronic structure elements 40-48. Image recognition can also be carried out.

[0059] Since electromigration structures can be depicted in a sufficiently good approximation by fractal elements, in particular by Julia sets, the calculation norm of the fractals can be used for the classification by means of the classification mechanism.

[0060] The classification characteristic of the electromigration structures can be the dimension of their fractals. The produced dendrites of the electromigration structures of the electronic structure elements 40-48 can be classified by means of the classification mechanism.

[0061] In addition to the classification for electrical (equivalent) models similar to the equivalent models used in electrochemical impedance spectroscopy, a fusion of the electrical and optical information of the electromigration can also be used.

[0062] The test device 10 can be used as a sacrificial structure and / or a measurement structure for a control device of a motor vehicle. The test device 10 can be arranged at a position within the motor vehicle at which the electronic structure elements 40-48 are particularly susceptible to electromigration. This means, for example, that the humidity, temperature and / or ionic contamination is higher at the position of the test device 10 than at the position of the control.

[0063] The failure of the electronic structural elements 40-48 of the test device 10 thus occurs before a failure of the electronic structural elements 40-48 of the control device. The failure can be detected. If a failure is detected, a warning can be issued, for example acoustically and / or optically. For example, a warning light on the dashboard of a motor vehicle can flash and / or a message "please go to the service station" can be output. A failure of the control device is thus reliably prevented.

[0064] The test method is carried out after a direct voltage for generating an electromigration is applied. The direct voltage can then be reapplied in order to generate an electromigration.

[0065] It is also conceivable for the electronic structural elements 40-48 to be tested or developed with the test device 10 to be used as a sacrificial structure or a measurement structure.

[0066] Figure 3 A schematic plan view of the test device 10 according to a second embodiment of the application is shown. The test device 10 according to the second embodiment of the application is distinguished from the test device 10 according to the first embodiment of the application in that Figure 3 Instead of electronic structural elements, printed conductor structures 50-58 are respectively tested for the test device 10. In other respects, the test device 10 according to the second embodiment of the application is not distinguished from the test device 10 according to the first embodiment of the application.

[0067] The printed conductor structures 50-58 can respectively be structurally identical to one another or (partially) different from one another in terms of their structural type.

[0068] Finally, it is pointed out that the concepts such as "having", "comprising" and the like should not be interpreted as excluding other elements or steps, and that the concepts such as "one" or "a" should not be interpreted as excluding a plurality. Reference signs in the claims should not be considered as limiting.

Claims

1. A test apparatus (10) for testing electrical structural components (40-48) and / or printed wire structures (50-58), The testing device (10) has multiple testing positions (20-28) for receiving electrical structural components (40-48) and / or printed wire structures (50-58), respectively. The testing device (10) further includes a selection mechanism for selecting one of the test positions (20-28). The test apparatus (10) has electrical wires arranged in rows (11-13) and columns (16-19) for supplying AC voltage in the form of a test signal to electrical structural elements (40-48) and / or printed wire structures (50-58) arranged at selected test locations (20-28). The test device (10) includes Z diodes (30-38) and a signal generator (50). The Z diodes (30-38) are used to electrically connect the corresponding electrical structural elements (40-48) and / or the corresponding printed wire structures (50-58) at the corresponding test locations (20-28) to one of the rows (11-13) of the electrical wires via one of the Z diodes (30-38). The signal generator (50) is configured to generate a test signal having a voltage signal as a sum of a rectangular signal and a waveform signal. Furthermore, the maximum voltage of the rectangular signal is at least equal to the breakdown voltage of the corresponding Z diode (30-38) at the selected test location (20-28). Its features An electromigration mechanism (90) is used to apply a DC voltage signal to the electrical structural elements (40-48) and / or the printed conductor structures (50-58) to induce electromigration in the electrical structural elements (40-48) and / or the printed conductor structures (50-58), wherein the DC voltage signal is greater than the breakdown voltage of the corresponding Z diode (30-38) at the selected test location (20-28).

2. The testing apparatus (10) according to claim 1, wherein, The waveform signal is a sine wave.

3. The testing apparatus (10) according to claim 1, further comprising a camera for detecting electromigration structures of electrical structural elements (40-48) and / or printed wire structures (50-58).

4. The testing apparatus (10) according to claim 3, further comprising a classification mechanism for classifying electromigration structures detected by the camera.

5. The testing apparatus (10) according to claim 4, The classification mechanism is configured to classify electromigration structures detected by the camera using machine learning.

6. The testing apparatus (10) according to claim 4 or 5, The classification mechanism is configured to assign electromigration structures detected by the camera to fractal elements and / or to a dimension of a fractal, respectively.

7. Control equipment systems for motor vehicles, The control device system includes control equipment for controlling at least a portion of the motor vehicle and a test device (10) according to any one of the preceding claims. The control device system is configured such that, compared to the case where the electrical structural elements and / or printed conductor structures (50-58) of the matrix structure are loaded with higher and / or longer-term DC voltage signals and / or higher electric field strengths.

8. A method for testing electrical structural elements (40-48) and / or printed wire structures (50-58) arranged at test positions (20-28) in a test apparatus (10), The testing device (10) has multiple testing positions (20-28) for receiving electrical structural elements (40-48) and / or printed wire structures (50-58) respectively. The testing device (10) has electrical wires arranged in rows (11-13) and columns (16-19) for supplying AC voltage to the electrical structural elements (40-48) and / or the printed wire structures (50-58) arranged at the selected testing positions (20-28). The test apparatus (10) includes Z diodes (30-38) for electrically connecting corresponding electrical structural elements (40-48) and / or corresponding printed conductor structures (50-58) at corresponding test locations (20-28) to one of the rows (11-13) of the electrical conductors via one of the Z diodes (30-38). The method includes the following steps: A DC voltage signal is applied to one or more electrical structural elements (40-48) and / or one or more printed conductor structures (50-58) by means of rows (11-13) and columns (16-19) of electrical conductors to induce electromigration in the respective electrical structural elements (40-48) and / or the respective printed conductor structures (50-58), wherein the voltage of the DC voltage signal is greater than the breakdown voltage of the respective Z diodes (30-38) of the electrical structural elements (40-48) and / or the printed conductor structures (50-58); by means of the The rows (11-13) and columns (16-19) of the electrical conductors are used to select test locations (20-28); and test signals are supplied to the electrical structural elements (40-48) and / or the printed conductor structures (50-58) arranged at the selected test locations (20-28), the test signals having a voltage signal as the sum of a rectangular signal and a waveform signal, wherein the maximum voltage of the rectangular signal is at least equal to the breakdown voltage of the Z diodes (30-38) at the selected test locations (20-28).

9. The method according to claim 8, wherein, The test device (10) is the test device (10) according to any one of claims 1-6.

10. The method according to claim 8, wherein, The waveform signal is a sine wave.

11. The method according to claim 8, The electromigration structure of the electrical structural elements (40-48) and / or printed wire structures (50-58) is detected optically.

12. The method according to claim 11, The electromigration structures detected optically are classified using machine learning.

13. The method according to claim 11, The electromigration structure detected optically is assigned to a fractal element and / or assigned to a dimension of a fractal.

14. The method according to claim 13, wherein, The fractal element is the Julia set.

15. The method according to claim 8, At least a portion of the electrical structural elements (40-48) and / or printed wire structures (50-58) are constructed differently.

16. The application of electrical structural elements tested by the method of any one of claims 8-15 and / or printed conductor structures (50-58) tested by the method of any one of claims 8-15 as sacrificial structures for control devices.

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