In-situ mapping characterization method for grain boundary stereostructure and electrical properties based on nanorobot
By using a nanorobot-based method, in-situ mapping characterization of the three-dimensional structure and electrical properties of zinc oxide grain boundaries was achieved, solving the problem that multi-dimensional directional measurement cannot be achieved in existing technologies, and establishing a database of grain boundary structure and electrical properties.
Patent Information
- Application Number
- CN202211048841.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-08-30
- Publication Date
- 2026-01-16
- Estimated Expiration
- 2042-08-30
AI Technical Summary
Existing technologies cannot achieve multi-dimensional measurement of grain boundary electrical properties and three-dimensional structural characterization. Lacking three-dimensional data support for grain boundaries, it is impossible to realize the mapping study between grain boundary structure and electrical properties.
A nanorobot-based approach was adopted to polish zinc oxide samples, screen grain boundaries using SEM, and perform three-dimensional structural characterization and in-situ mapping of electrical properties using nanorobots, thereby establishing a database of three-dimensional structure and electrical properties.
Robotic automatic characterization, three-dimensional characterization and in-situ mapping characterization of grain boundaries were achieved, and data on the three-dimensional structure and electrical properties of grain boundaries were obtained. An in-situ mapping characterization database was established.
Smart Images

Figure CN115371601B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application belongs to the technical field of micro-nano measurement, and particularly relates to a method for mapping and characterizing in-situ grain boundary three-dimensional structure and electrical properties based on a nano robot. BACKGROUND
[0002] Polycrystalline functional materials have excellent macro properties, mainly due to the coupling effect of internal grain boundaries. At present, grain boundary research mainly focuses on electrical property measurement, and the characterization also mainly focuses on electrical property measurement in a single dimension direction, which cannot realize measurement in multiple dimensions and lacks measurement data in three-dimensional directions. Grain boundary research mainly uses manual measurement, and the measurement method also needs to adjust the sample orientation to meet the requirements of the measurement, which cannot meet the needs of in-situ characterization of grain boundaries, and most of them use a single electrical measurement method, lacking data of three-dimensional characterization of grain boundaries. In addition, most of the grain boundary measurements study electrical properties, lack three-dimensional structure data of grain boundaries, and cannot realize the mapping research of grain boundary structure and electrical properties, resulting in a lack of data support for the in-situ characterization database of grain boundaries. SUMMARY
[0003] The purpose of the present application is to provide a method for mapping and characterizing in-situ grain boundary three-dimensional structure and electrical properties based on a nano robot.
[0004] To achieve the above purpose, the present application adopts the following technical scheme:
[0005] A method for mapping and characterizing in-situ grain boundary three-dimensional structure and electrical properties based on a nano robot, comprising the following steps:
[0006] Step 1, polishing and placing zinc oxide; polishing the zinc oxide, marking the polished surface as X-Y surface, and placing the zinc oxide in the sample chamber of SEM with the X-Y surface horizontally upward;
[0007] Step 2, screening two grain boundary surfaces;
[0008] Step 3, three-dimensionally characterizing the three-dimensional structure of the grain boundary surface; dividing position points on the grain boundary surface, detecting the Z-direction height of the position points, and extracting the Z-direction height data;
[0009] Step 4, obtaining the electrical properties of the position points;
[0010] Step 5, establishing an in-situ mapping and characterization database of grain boundary three-dimensional structure and electrical properties.
[0011] Further, in step 2, the method for screening two grain boundary surfaces is as follows: first, using SEM to preliminarily image all two-dimensional grain boundary surfaces in the X-Y surface of the zinc oxide, screening out a target grain boundary region with a clear two-dimensional grain boundary contour shape in the X-Y surface, and then using SEM to screen out the grain boundary surfaces of two grains from the target grain boundary region, which are marked as GS1 and GS2.
[0012] Further, in step 3, the method of dividing the position points on the grain boundary surface includes the following steps:
[0013] (3.1) Extract the contour of GS1, sequentially reduce the contour of GS1 by length L1 at equal intervals to obtain n contours, then equally divide all contours by m along the circumferential direction from large to small, and mark the equally divided points as circumferential position points, and sequentially divide all circumferential position points of the contours into a 11 , a 12 , …, a 1m , a 21 , a 22 , …, a 2m , …, a n1 , a n2 , …, a nm ;
[0014] (3.2) Extract the contour of GS2, sequentially reduce the contour of GS2 by length L2 at equal intervals to obtain p contours, then equally divide all contours by q along the circumferential direction from large to small, and mark the equally divided points as circumferential position points, and sequentially divide all circumferential position points of the contours into b 11 , b 12 , …, b 1q , b 21 , b 22 , …, b 2q , …, b p1 , b p2 , …, b pq .
[0015] Further, in step 3, the method of detecting the Z-direction height of the position points includes the following steps:
[0016] (3.3) Control the end of the nanorobot to move above position point a 11 , control the end of the nanorobot to move downward along the Z-direction until the end of the nanorobot contacts the grain at position point a 11 , and detect the Z-direction height of the grain at position point a 11 ;
[0017] (3.4) Repeat the method of step (3.3), control the end of the robot to move along position points a 12 , …, a 1m , a 21 , a 22 , …, a 2m , …, a n1 , a n2 , …, a nmthe Z-direction height of the crystal grain at each position point of GS1 in the X-Y plane is obtained in sequence, and the relative height difference of the crystal grain at each position point of GS1 in the Z-direction is obtained;
[0018] (3.5) using the relative height difference of all position points, the three-dimensional structure data of the Z-direction height of the crystal grain at all position points of GS1 is extracted;
[0019] (3.6) repeating the method of steps (3.3), (3.4) and (3.5), the three-dimensional structure data of the Z-direction height of the crystal grain at all position points of GS2 is extracted.
[0020] Further, in step 4, the method for obtaining the electrical properties of the position points comprises the following steps:
[0021] (4.1) first control the nanorobot end 1 to move to the position point a 11 above, control the nanorobot end 1 to move downward along the Z-direction until the nanorobot end 1 contacts the crystal grain at the position point a 11 above, control the nanorobot end 2 to move to the position point b 11 above, control the nanorobot end 2 to move downward along the Z-direction until the nanorobot end 2 contacts the crystal grain at the position point b 11 , in-situ detect the electrical properties between the crystal grains at the position point a 11 of GS1 and the position point b 11 of GS2;
[0022] (4.2) while the nanorobot end 1 in-situ detects the crystal grain at the position point a 11 of GS1, repeat the method of step (4.1), control the nanorobot end 2 to in-situ detect the electrical properties of the crystal grains at the position points b 12 , b 13 , …, b 1q , b 21 , b 22 , …, b 2q , …, b p1 , b p2 , …, b pq of GS2 in sequence, respectively obtain the electrical properties between the crystal grains at the position point a 11 of GS1 and all position points b 12 , b 13 , …, b 1q , b 21 , b 22 , …, b 2q , …, b p1 , b p2 , …, b pq of GS2;
[0023] (4.3) repeating the method of steps (4.1) and (4.2) to obtain the electrical properties between the grain at each position point of GS1 and all position points of GS2.
[0024] Further, in step 5, the method for establishing the in-situ mapping characterization database of the grain boundary stereoscopic structure and electrical properties is: the stereoscopic structure data and electrical property data of the grain boundary surfaces GS1 and GS2 are discretized and uploaded to the upper computer system respectively; steps 2-4 are repeated to obtain the stereoscopic structure data and electrical property data of other grain boundary surfaces, which are discretized and then uploaded to the upper computer system respectively; then the grain boundary structure database is established by using the stereoscopic structure data of the grain boundary, and the in-situ mapping model is established by using the grain boundary structure database and the grain boundary electrical property database.
[0025] Further, in step (3.1), the first position point of each contour of GS1 intersecting with the longest line segment in the X direction of GS1 is divided into a 11 , a 12 , …, a 1m .
[0026] Compared with the prior art, the present application has the following beneficial effects:
[0027] 1. The present application solves the problems of lack of grain boundary stereoscopic structure characterization data, inability to realize in-situ mapping characterization, difficulty in establishing an in-situ mapping characterization database, and other problems existing in the prior art grain boundary characterization, and can realize the functions of robot automatic characterization, three-dimensional stereoscopic characterization, and in-situ characterization of grain boundaries.
[0028] 2. The X-Y face of the zinc oxide is placed upward in the chamber of the SEM, so that the X-Y face of the zinc oxide is placed horizontally in a two-dimensional plane, thereby achieving the purpose of horizontally placing the polished zinc oxide X-Y face upward.
[0029] 3. The SEM is used to quickly select the grain boundary surface GS1 and the grain boundary surface GS2 of the grain with a simple contour shape in the X-Y plane from the target grain boundary region as the target grain boundary, thereby achieving the purpose of quickly selecting the grain boundary surface GS1 and the grain boundary surface GS2 in the X-Y plane of the zinc oxide using the SEM.
[0030] 4. Each contour is equally divided along the circumferential direction from large to small, and the circumferential position points of each contour are divided into a 11 , a 12 , …, a 1m , a 21 , a 22 , …, a 2m , …, a n1 .n2 ,..., a nm , the different detection position points of the two-dimensional X-Y plane grain boundary surface GS1 of the crystal grain are divided, so that the robot end can be used to sequentially perform clockwise characterization on the different detection position points of the two-dimensional grain boundary surface GS1 of the crystal grain along the contours from large to small.
[0031] 5, each contour is equally divided by q along the circumference, and each contour circumferential position point is sequentially divided into b 11 , b 12 ,..., b 1q , b 21 , b 22 ,..., b 2q ,..., b p1 , b p2 ,..., b pq , the different detection position points of the two-dimensional X-Y plane grain boundary surface GS2 of the crystal grain are divided, so that the robot end can be used to sequentially perform counterclockwise characterization on the different detection position points of the two-dimensional grain boundary surface GS2 of the crystal grain along the contours from large to small.
[0032] 6, control the robot end to move clockwise along the position points a 12 ,..., a 1m , a 21 , a 22 ,..., a 2m ,..., a n1 , a n2 ,..., a nm , to sequentially detect the relative height of each different position point Z of the grain boundary surface GS1 in the X-Y plane, obtain the relative height difference of each different position point of the grain boundary surface GS1 in the Z direction, extract the three-dimensional structure data of the different Z direction height of the different position points of the two-dimensional grain boundary surface GS1, so as to realize the robot clockwise characterization of the two-dimensional structure of the grain boundary surface GS1 in the X-Y plane in the Z direction, thereby achieving the three-dimensional characterization of the three-dimensional structure of the grain boundary surface GS1 by the nanometer robot.
[0033] 7, control the robot end to move clockwise along the position points b 11 , b 12 ,..., b 1q , b 21 , b 22 ,..., b 2q ,..., b p1 , b p2 ,..., b pqBy performing counterclockwise motion, the relative height of the grain boundary surface GS2 in the Z-direction at different positions in the XY plane is detected sequentially. The relative height difference in the Z-direction at different positions of the grain boundary surface GS2 is obtained, and the three-dimensional structural data of the different Z-direction heights at different positions of the two-dimensional grain boundary surface GS2 are extracted. In this way, the robot can characterize the different Z-direction heights of the two-dimensional structure of the grain boundary surface GS2 in the XY plane in the counterclockwise direction, thereby achieving the purpose of using nanorobots to perform three-dimensional characterization of the three-dimensional structure of the grain boundary surface GS2.
[0034] 8. By cooperating with the end effector 1 and end effector 2 of the nanorobot to achieve in-situ electrical measurement, the electrical properties of grain boundary surface GS1 relative to grain boundary surface GS2 at different locations can be obtained. The electrical properties measured in situ are used to map the three-dimensional structures of grain boundary surfaces GS1 and GS2 in the three-dimensional direction. This enables the in-situ mapping and characterization of the three-dimensional structure and electrical properties of grain boundary surfaces GS1 and GS2 by the nanorobot, thereby achieving the goal of in-situ mapping and characterization of the electrical properties of grain boundary surfaces GS1 and GS2 by the nanorobot.
[0035] 9. A grain boundary structure database is established using three-dimensional grain boundary structure data, and a grain boundary electrical property database is established using mapped electrical property data of grain boundaries. An in-situ mapping model is then established between the grain boundary structure database and the grain boundary electrical property database, thereby achieving the goal of establishing an in-situ mapping characterization database for grain boundaries using these two databases. This method features three-dimensional characterization, automatic measurement, in-situ mapping characterization, and coupled characterization. Attached Figure Description
[0036] Figure 1 This is a flowchart of Embodiment 1 of the present invention;
[0037] Figure 2 This is a flowchart illustrating the three-dimensional characterization of the grain boundary surface in Embodiment 1 of the present invention.
[0038] Figure 3 This is a flowchart illustrating the in-situ mapping characterization of the electrical properties of grain boundary surfaces in Embodiment 1 of the present invention;
[0039] Figure 4 This is a flowchart illustrating the process of establishing an in-situ mapping characterization database of grain boundary three-dimensional structure and electrical properties in Embodiment 1 of the present invention.
[0040] Figure 5 This is a schematic diagram illustrating the division of position points for three-dimensional characterization of the three-dimensional structure of the grain boundary surface in Embodiment 1 of the present invention;
[0041] Figure 6 This is a schematic diagram of in-situ mapping measurement and characterization of the electrical properties of the grain boundary surface in Embodiment 1 of the present invention. Detailed Implementation
[0042] Embodiment 1
[0043] A method for in-situ mapping characterization of three-dimensional structure and electrical properties of grain boundaries based on nanorobot, as shown in the figure, comprising the following steps: Figures 1-6
[0044] Step 1, horizontally place the polished zinc oxide X-Y surface upward: polish the zinc oxide, mark the polished surface as X-Y surface, and place the zinc oxide in the sample chamber of SEM with the X-Y surface horizontally upward; thereby achieving the purpose of horizontally placing the polished zinc oxide X-Y surface upward.
[0045] Step 2, screen two-dimensional grain boundary surfaces in the X-Y surface of zinc oxide: after placing the polished zinc oxide X-Y surface upward, first use SEM to preliminarily image all two-dimensional grain boundary surfaces in the X-Y surface of zinc oxide, screen the region with clear grain boundary profile shape in the X-Y surface as the target grain boundary region, and then use SEM to screen the grain boundary surfaces of two grains G1 and G2 from the target grain boundary region, the grain boundary surfaces of the two grains G1 and G2 are marked as GS1 and GS2. Thus, the purpose of using SEM to quickly screen the grain boundary surfaces GS1 and GS2 in the X-Y surface of zinc oxide is achieved. The grain boundary surface is the two-dimensional grain boundary surface formed by imaging the upper surface of the grain in the two-dimensional X-Y surface.
[0046] Step 3, use SEM coupled with nanorobot to characterize the three-dimensional structure of the grain boundary surface: divide the position points on the grain boundary surface, detect the Z-direction height of the position points, and extract the Z-direction height data, as shown in the figure, comprising the following steps: Figure 2 、 Figure 5
[0047] (3.1) After using SEM to image the grain boundary surface GS1 of the grain G1 in the X-Y surface, extract the profile of GS1, sequentially reduce the profile of GS1 with length L1 (the smaller the value of L1, the better), obtain n profiles (n-1 multiplied by 2L1 is less than the longest line segment in X direction of GS1), so that the first position point where each profile of the grain boundary surface GS1 intersects with the longest line segment in X direction of GS1 is sequentially divided into a 11 , a 21 , …, a n1 , then divide all profiles into m equal parts along the circumference from large to small, and mark the equal division points as circumferential position points, and sequentially divide all circumferential position points of the profiles into a 11 , a 12 , …, a 1m , a 21 , a 22 , …, a2m ,..., a n1 , a n2 ,..., a nm . The different detection position points of the two-dimensional X-Y plane grain boundary surface GS1 of the grain G1 are divided, so that the purpose of sequentially characterizing the different detection position points of the two-dimensional grain boundary surface GS1 of the grain G1 in a clockwise direction by the robot end along the contours from large to small can be achieved.
[0048] (3.2) Repeat the method of step (3.1), after the grain boundary surface GS2 of the grain G2 is imaged in the two-dimensional X-Y plane by SEM, the contour structure of GS2 is extracted, the contours of GS2 are sequentially reduced at an equal interval of length L2, p contours are obtained (including the contour of GS2, a total of p contours, the product of p-1 and 2L1 is less than the longest line segment in the X direction of GS2), so that the first position point at which each contour of the grain boundary surface GS2 intersects with the longest line segment in the X direction of GS2 is sequentially divided into b 11 , b 21 ,..., b p1 , and then all the contours are divided into q equal parts along the circumference from large to small, and the equal parts are denoted as circumferential position points, and the circumferential position points of all the contours are sequentially divided into b 11 , b 12 ,..., b 1q , b 21 , b 22 ,..., b 2q ,..., b p1 , b p2 ,..., b pq , the different detection position points of the two-dimensional X-Y plane grain boundary surface GS2 of the grain G2 are divided, so that the purpose of sequentially characterizing the different detection position points of the two-dimensional grain boundary surface GS2 of the grain G2 in a counterclockwise direction by the robot end along the contours from large to small can be achieved.
[0049] (3.3) After the different position points of the grain boundary surface GS1 of the grain G1 and the grain boundary surface GS2 of the grain G2 are divided by SEM, the nanorobot end is controlled to move above the position point a 11 , and then the nanorobot end is controlled to move downward along the Z direction until the nanorobot end contacts the grain at the position point a 11 , and the Z direction height of the grain at the position point a 11 is detected.
[0050] (3.4) Repeat the method of step (3.3), control the robot end to move along the position points a 12 ,..., a 1m , a 21 , a 22 ,..., a2m ,..., a n1 , a n2 ,..., a nm ,..., a 11 ,..., a 21 ,..., a 21 ,..., a 21 ,..., a 12 ,..., a 1q ,..., a 21 ,..., a 22 ,..., a 2q ,..., a p1 ,..., a p2 ,..., a pq ,..., a 21 ,..., a
[0051] (3.5) Using the relative height differences of all the position points of GS1, the stereoscopic structure data of the Z-direction height of the grains at all the position points of GS1 is extracted; in this way, the robot is controlled to represent the different Z-direction heights of the two-dimensional structure of the grain boundary surface GS1 in the X-Y plane in the clockwise direction, so as to achieve the purpose of three-dimensional representation of the stereoscopic structure of the grain boundary surface GS1 by the nanorobot.
[0052] (3.6) The method of steps (3.3), (3.4) and (3.5) is repeated, the nanorobot end is controlled to move above position point a 21 , and then the nanorobot end is controlled to move downward along the Z-direction until the nanorobot end contacts the grain at position point a 21 , and the Z-direction height of the grain at position point a 21 is detected. Then the method of step (3.3) is repeated, the robot end is controlled to explore the Z-direction height of the grain at each position point of GS2 in the X-Y plane in the order of position points b 12 ,..., b 1q , b 21 , b 22 ,..., b 2q ,..., b p1 , b p2 ,..., b pq , b 21 , b
[0053] Step 4, the nanorobot end is controlled to in-situ map and represent the electrical properties of the grain boundary surface, as shown in FIGS. Figure 3 , Figure 6 , including the following steps:
[0054] (4.1) When the stereo structure of the grain boundary surface GS1 and the grain boundary surface GS2 is characterized in sequence by using the SEM coupled nanorobot, firstly control the nanorobot terminal 1 to move to the position point a 11 above, control the nanorobot terminal 1 to move downward along the Z direction until the nanorobot terminal 1 contacts the grain at the position point a 11 above, control the nanorobot terminal 2 to move to the position point b 11 above, control the nanorobot terminal 2 to move downward along the Z direction until the nanorobot terminal 2 contacts the grain at the position point b 11 above, control the nanorobot terminal 2 to move downward along the Z direction until the nanorobot terminal 2 contacts the grain at the position point b 11 above, control the nanorobot terminal 2 to move downward along the Z direction until the nanorobot terminal 2 contacts the grain at the position point b 11 above, control the nanorobot terminal 2 to move downward along the Z direction until the nanorobot terminal 2 contacts the grain at the position point b
[0055] (4.2) While the nanorobot terminal 1 in situ detects the grain at the position point a 11 of GS1, repeat the method of step (4.1), control the nanorobot terminal 2 to in situ detect the grains at the positions b 12 , b 13 , …, b 1q , b 21 , b 22 , …, b 2q , …, b p1 , b p2 , …, b pq of GS2 in sequence, respectively obtain the electrical properties between the grains at the position point a 11 of GS1 and all position points b 12 , b 13 , …, b 1q , b 21 , b 22 , …, b 2q , …, b p1 , b p2 , …, b pq of GS2;
[0056] (4.3) Repeat the methods of steps (4.1) and (4.2), when the nanorobot terminal 1 in situ detects the grain at the position point a 12 of the grain boundary surface GS1, the nanorobot terminal 2 in situ detects the grains at the positions b 11 , b 12 , …, b 1q , b 21 , b 22 , …, b 2q , …, b p1 , b p2 , …, bpq The electrical properties of the grains at the point were obtained, and the location point a of GS1 on the grain boundary surface was also obtained. 12 Position b relative to the grain boundary surface GS2 11 b 12 , ..., b 1q b 21 b 22 , ..., b 2q ... b p1 b p2 , ..., b pq The electrical properties of the grains at that location. Similarly, when the end effector of the nanorobot is controlled to probe the location point a of the grain boundary surface GS1 in situ... nm When the grains are in the same location, the end effector 2 of the nanorobot sequentially probes the location point b of the grain boundary surface GS2 in situ. 11 b 12 , ..., b 1q b 21 b 22 , ..., b 2q ... b p1 b p2 , ..., b pq For each grain at the specified location, obtain the position point a of the grain boundary surface GS1. nm Position b relative to the grain boundary surface GS2 11 b 12 , ..., b 1q b 21 b 22 , ..., b 2q ... b p1 b p2 , ..., b pq The electrical properties of the grains at each location on GS1 relative to all locations on GS2 are obtained. In-situ electrical measurements are achieved through the cooperation of nanorobot end caps 1 and 2, allowing the acquisition of the electrical properties of different locations on the grain boundary surface GS1 relative to the grain boundary surface GS2. These in-situ measured electrical properties are then used to map the three-dimensional structures of grain boundary surfaces GS1 and GS2, thus achieving in-situ mapping characterization of the three-dimensional structure and electrical properties of grain boundary surfaces GS1 and GS2 using nanorobots. This achieves the goal of in-situ mapping characterization of the electrical properties of grain boundary surfaces GS1 and GS2 using nanorobots.
[0057] Step 5: Establish a database for in-situ mapping characterization of grain boundary three-dimensional structure and electrical properties; such as... Figure 5As shown, after in-situ mapping characterization is realized by measuring the electrical properties of the grain boundary surface GS1 and the grain boundary surface GS2 in-situ with the nanorobot, first, the three-dimensional structure data and the electrical property data of the grain boundary surfaces GS1 and GS2 are discretized and uploaded to the upper computer system respectively; steps 2-4 are repeated to obtain the three-dimensional structure data and the electrical property data of other grain boundary surfaces, which are discretized and then uploaded to the upper computer system respectively; then, a grain boundary structure database is established using the three-dimensional structure data of the grain boundary, a grain boundary electrical property database is established using the mapping electrical property data of the grain boundary, and an in-situ mapping model is established using the grain boundary structure database and the grain boundary electrical property database. Thus, the purpose of establishing the in-situ mapping characterization database of the grain boundary using the grain boundary structure database and the grain boundary electrical property database is achieved.
Claims
1. A method for in-situ mapping and characterization of grain boundary stereostructure and electrical properties based on nanorobots, characterized in that, The method comprises the following steps: Step 1, zinc oxide polishing is placed; the zinc oxide is polished to form an X-Y surface, and the zinc oxide is placed in the sample chamber of the SEM, so that the X-Y surface is horizontally upward; Step 2, two grain boundary surfaces are screened: firstly, the SEM is used to preliminarily image all two-dimensional grain boundary surfaces in the X-Y surface of the zinc oxide, and a region with a clear two-dimensional grain boundary profile shape in the X-Y surface is selected as a target grain boundary region; then, the SEM is used to screen two grain boundary surfaces of two grains from the target grain boundary region, which are denoted as GS1 and GS2; Step 3, three-dimensional characterization of the three-dimensional structure of the grain boundary surface is performed; position points are divided on the grain boundary surface, the Z-direction height of the position points is detected, and Z-direction height data is extracted; Step 4, the electrical properties of the position points are obtained; Step 5, a three-dimensional structure and electrical property in-situ mapping characterization database of the grain boundary is established; In step 3, the method for dividing position points on the grain boundary surface comprises the following steps: (3.1) extracting the contour of GS1, sequentially reducing the contour of GS1 at equal intervals with length L1 to obtain n contours, the product of n-1 and 2L1 is less than the longest line segment in the X direction within GS1, so that the first position point at which each contour of the grain boundary surface GS1 intersects with the longest line segment in the X direction within GS1 is sequentially divided into a 11 , a 21 , ……, a n1 ; then all the contours are equally divided along the circumferential direction by m, and the equally divided points are recorded as circumferential position points, and all the circumferential position points of the contours are sequentially divided into a 11 , a 12 , ……, a 1m , a 21 , a 22 , ……, a 2m , ……, a n1 , a n2 , ……, a nm ; (3.2) extract the outline of GS2, sequentially reduce the outline of GS2 at equal intervals with length L2 to obtain p outlines, then respectively equally divide all the outlines along the circumferential direction with q, and mark the equally divided points as circumferential position points, sequentially divide all the circumferential position points of the outlines into b 11 , b 12 , ……, b 1q , b 21 , b 22 , ……, b 2q , ……, b p1 , b p2 , ……, b pq ; The method for detecting the Z-direction height of the position points comprises the following steps: (3.3) Control the end of the nanorobot to move to position point a 11 Up, control the end of the nanorobot to move downward along the Z direction until position point a 11 at the grain, detect the Z direction height of the grain at position point a 11 at the grain, detect the Z direction height of the grain at position point a (3.4) repeating the method of step (3.3) to control the robot end to sequentially probe the Z-direction height of the crystal grain of GS1 at each position point of a 12 ,..., a 1m , a 21 , a 22 ,..., a 2m ,..., a n1 , a n2 ,..., a nm in the X-Y plane, and obtain the Z-direction relative height difference of the crystal grain of GS1 at each position point; (3.5) the relative height difference of all position points is used to extract the three-dimensional structure data of the Z-direction height of the grain at all position points of GS1; (3.6) the methods of steps (3.3), (3.4) and (3.5) are repeated to extract the three-dimensional structure data of the Z-direction height of the grain at all position points of GS2.
2. The method of claim 1, wherein, In step 4, the method for obtaining the electrical properties of the position points comprises the following steps: (4.1) First, control the nanorobot end 1 to move to the position point a 11 above, control the nanorobot end 1 to move downward along the Z direction until the grain at the position point a 11 above, control the nanorobot end 2 to move to the position point b 11 above, control the nanorobot end 2 to move downward along the Z direction until the grain at the position point b 11 above, control the nanorobot end 2 to move downward along the Z direction until the grain at the position point b 11 above, control the nanorobot end 2 to move downward along the Z direction until the grain at the position point b 11 above, control the nanorobot end 2 to move downward along the Z direction until the grain at the position point b (4.2) In-situ detection of the location a of GS1 by the end effector of the nanorobot 11 While detecting the grains at the location, the method in step (4.1) is repeated to control the end effector 2 of the nanorobot to sequentially probe the location point b of GS2 in situ. 12 b 13 , ..., b 1q b 21 b 22 , ..., b 2q ... b p1 b p2 , ..., b pq The electrical properties of the grains at the location were obtained, and the location a of GS1 was also obtained. 11 and all location points b of GS2 12 b 13 , ..., b 1q b 21 b 22 , ..., b 2q ... b p1 b p2 , ..., b pq Electrical properties between grains at the location; (4.3) the methods of steps (4.1) and (4.2) are repeated to obtain the electrical properties between the grains at each position point of GS1 and all position points of GS2.
3. The method of claim 2, wherein, In step 5, the method for establishing the three-dimensional structure and electrical property in-situ mapping characterization database of the grain boundary is as follows: the three-dimensional structure data and electrical property data of the grain boundary surfaces GS1 and GS2 are discretely processed and uploaded to the upper computer system respectively; steps 2-4 are repeated to obtain the three-dimensional structure data and electrical property data of other grain boundary surfaces, which are discretely processed and then uploaded to the upper computer system respectively; then, a grain boundary structure database is established by using the three-dimensional structure data of the grain boundary, a grain boundary electrical property database is established by using the mapping electrical property data of the grain boundary, and an in-situ mapping model is established by using the grain boundary structure database and the grain boundary electrical property database.
4. The method of claim 3, wherein, In step (3.1), the first position points where each profile of GS1 intersects with the longest line segment in X direction within GS1 are sequentially divided into a 11 , a 12 , …, a 1m .
Citation Information
Patent Citations
Characterization method of crystal boundary electrical properties
CN108254399A
Glass surface deformation analysis method based on nanoindentation in-situ scanning technology
CN114184505A