An ultra-high voltage insulating sleeve insulation characteristic simulation analysis optimization method and device

Abstract

The application discloses a kind of simulation analysis optimization methods and devices of ultra-high voltage insulating sleeve insulation characteristics, and it relates to power equipment technical field.The method uses the method of parameterization modeling, sets the horizontal displacement of center conductor radius, inner shield and the horizontal displacement of ground shield as global variable, avoids repeatedly adjusting ultra-high voltage insulating sleeve two-dimensional model;At the same time, the application uses field calculator function to edit tangential field intensity E m2 Formula is applied in the path of concerned variable, and then the internal insulation structure of ultra-high voltage insulating sleeve is optimized;The device comprises model establishing unit, parameter optimization unit, path setting unit, structure parameter optimization unit and optimal parameter confirming unit connected in sequence.The application improves the simulation analysis efficiency of ultra-high voltage insulating sleeve insulation characteristics, and has great practical significance for the insulation design of high-voltage electrical apparatus.

Description

Technical Field

[0001] The present invention belongs to the technical field of electric power equipment, and in particular relates to a method and device for simulating and analyzing the insulation characteristics of an ultra-high voltage insulating bushing. Background Art

[0002] Bushings play a crucial role in insulation in high-voltage equipment. Their safe and stable operation directly impacts the safe, reliable, and stable operation of the entire high-voltage electrical equipment and power lines. Bushing insulation design varies depending on the voltage level and has its own unique characteristics.

[0003] As voltage levels increase, insulation performance requirements also increase, necessitating continuous improvements to insulation structures. Generally speaking, at lower voltage levels, insulation structures are relatively simple, and the requirements for insulation materials are also lower. However, as voltage levels rise, insulation structures become more complex, and the requirements for insulation materials increase accordingly. For example, for voltage levels between 10kV and 20kV, air can be used as the internal insulating medium, with the inner wall of the bushing sprayed with metal. Sharp corners are avoided during processing, and the flange is formed into a circular arc. This insulation structure meets the insulation requirements of low-voltage bushings. However, for ultra-high and ultra-high voltage bushings, this structure falls far short of the insulation requirements, requiring additional insulation protection components and field optimization measures. This complicates the insulation design of these bushings. Summary of the Invention

[0004] Aiming at the blank in the current research on simulation and optimization of insulation characteristics of ultra-high voltage insulation bushings, the present invention provides a simulation analysis and optimization method and device for insulation characteristics of ultra-high voltage insulation bushings.

[0005] The present invention is achieved by adopting the following technical solutions:

[0006] A method for simulating, analyzing and optimizing insulation characteristics of an ultra-high voltage insulating bushing, comprising the following steps:

[0007] 1) Using Maxwell’s parametric modeling capabilities, a two-dimensional model of the ultra-high voltage insulating bushing was established;

[0008] 2) Based on the established two-dimensional model of the ultra-high voltage insulating bushing, the radius of the central conductor, the horizontal displacement of the inner shield, and the horizontal displacement of the ground shield are set as global variables and optimized as structural parameters;

[0009] 3) Keep the porcelain shed features at the maximum field strength and set a path here to edit the tangential field strength E using the Maxwell midfield calculator function. m2 Calculate the formula and apply it to this path;

[0010] 4) Under rated phase voltage, the target optimization function in Maxwell is used to observe the effect of single structural parameter change on the tangential field strength E m2 The influence of the three structural parameters is determined to determine the research range of the structural parameters; the research range of the parameters is comprehensively optimized, and the three structural parameters are set to change together to optimize the structural parameters of the ultra-high voltage insulating bushing;

[0011] 5) Import the optimized ultra-high voltage insulating bushing structural parameters into Maxwell for verification and select the optimal parameters.

[0012] A further improvement of the present invention is that the Maxwell parameterized modeling function in step 1) specifically includes:

[0013] Based on the simplified ultra-high voltage insulating bushing structure, a 1:1 two-dimensional parametric simulation model was established in Maxwell. The center conductor radius, the horizontal displacement of the inner shield, and the horizontal displacement of the ground shield were selected as structural parameters. The two-dimensional model of the ultra-high voltage insulating bushing was adjusted by adjusting the values ​​of the structural parameters.

[0014] A further improvement of the present invention is that in step 2), the radius of the center conductor is in the range of 80 to 95 mm, with a step length of 1 mm; the horizontal displacement of the intermediate shield is in the range of -10 to 20 mm, with a positive right shift, and a step length of 5 mm; the horizontal displacement of the ground shield is in the range of -10 to 8 mm, with a positive right shift, and a step length of 1 mm.

[0015] A further improvement of the present invention is that the step 3) is specifically:

[0016] 31) Use the Maxwell centerline tool to draw the path of the porcelain sheath at the point of maximum retained field strength;

[0017] 32) Use the field calculator function to edit the tangential field strength E m2 Calculate the formula and apply it to this path;

[0018] 33) Set the tangential field strength E in the Maxwell result. m2 Result report.

[0019] A further improvement of the present invention is that the tangential field strength E m2 The calculation formula Where MagE is the field strength value at point P, nE is the radial field strength value at point P, and P is a point on the set path.

[0020] A further improvement of the present invention is that the step 4) is specifically:

[0021] 41) Under the rated phase voltage, use the target optimization function in Maxwell to select the parameter option, set the corresponding structural parameter step size, and observe the effect of the change of a single structural parameter on the tangential field strength E. m2 The influence of , determine the research range of structural parameters;

[0022] 42) Comprehensive optimization parameter research range, through the target optimization function in Maxwell, select the optimization option, set the three structural parameters to change together, set the tangential field strength value E m2 ≤0.4kV / mm, select the optimization method to optimize the structural parameters of the ultra-high voltage insulating bushing.

[0023] A further improvement of the present invention is that the step 5) is specifically:

[0024] 51) The optimized UHV insulation bushing structural parameters are imported into the UHV insulation bushing model under rated phase voltage for verification. The comprehensive analysis results and the design requirements of process manufacturing are used to select three sets of appropriate optimization parameters;

[0025] 52) The optimized parameters are imported into the ultra-high voltage insulation bushing model under lightning impulse overvoltage for verification to determine the optimal parameters.

[0026] A device for simulating, analyzing and optimizing insulation characteristics of an ultra-high voltage insulating bushing, comprising:

[0027] The model building unit uses Maxwell's parametric modeling function to build a two-dimensional model of the ultra-high voltage insulating bushing;

[0028] The parameter optimization unit sets the radius of the central conductor, the horizontal displacement of the inner shield, and the horizontal displacement of the ground shield as global variables based on the established two-dimensional model of the ultra-high voltage insulating bushing, and optimizes them as structural parameters;

[0029] Path setting unit, retain the porcelain shed skirt characteristics at the maximum field strength, and set a path here, use the Maxwell midfield calculator function to edit the tangential field strength E m2 Calculate the formula and apply it to this path;

[0030] The structural parameter optimization unit uses the target optimization function in Maxwell to observe the effect of a single structural parameter change on the tangential field strength E under rated phase voltage. m2 The influence of the three structural parameters is determined to determine the research range of the structural parameters; the research range of the parameters is comprehensively optimized, and the three structural parameters are set to change together to optimize the structural parameters of the ultra-high voltage insulating bushing;

[0031] The optimal parameter confirmation unit imports the optimized ultra-high voltage insulating bushing structural parameters into Maxwell for verification and selects the optimal parameters.

[0032] The present invention has at least the following beneficial technical effects:

[0033] The present invention provides a method and device for simulating and analyzing the insulation characteristics of an ultra-high voltage insulating bushing. The method adopts a parametric modeling method to set the center conductor radius, the horizontal displacement of the inner shield, and the horizontal displacement of the ground shield as global variables, thereby avoiding repeated adjustment of the ultra-high voltage insulating bushing two-dimensional model. At the same time, the present invention uses the field calculator function to edit the tangential field strength E m2 The formula is applied to the variable path of interest, and then the internal insulation structure of the ultra-high voltage insulating bushing is optimized and designed, which improves the efficiency of simulation analysis of the insulation characteristics of the ultra-high voltage insulating bushing and has great practical significance for the insulation design of high-voltage electrical appliances. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 This is a schematic diagram of the optimization process of simulation parameters for the insulation characteristics of an ultra-high voltage insulating bushing according to an example of the present invention.

[0035] Figure 2 To define the path of the outer surface of the ceramic part (black bold part).

[0036] Figure 3 The tangential field strength E of the path set before and after optimization m2 ,in Figure 3 (a) is the tangential field strength of the path set before optimization, Figure 3 (b) is the tangential field strength E of the optimized path m2 .

[0037] Figure 4 This is a structural block diagram of the device for simulating, analyzing and optimizing the insulation characteristics of an ultra-high voltage insulating bushing according to the present invention. DETAILED DESCRIPTION

[0038] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art. It should be noted that, unless there is a conflict, the embodiments of the present disclosure and the features described in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0039] like Figure 1 As shown, the present invention provides a method for simulating, analyzing and optimizing the insulation characteristics of an ultra-high voltage insulating bushing, comprising the following steps:

[0040] S1. Use Maxwell's parametric modeling function to establish a two-dimensional model of the ultra-high voltage insulating bushing.

[0041] In this step, a 1:1 two-dimensional parametric simulation model is established in Maxwell based on the reasonably simplified ultra-high voltage insulating bushing structure. The center conductor radius, the horizontal displacement of the inner shield, and the horizontal displacement of the ground shield are selected as structural parameters. The model is adjusted by adjusting the structural parameter values.

[0042] S2. Set the center conductor radius, the horizontal displacement of the inner shield, and the horizontal displacement of the ground shield as global variables and optimize them as structural parameters.

[0043] This step focuses on the effects of the center conductor radius, the horizontal displacement of the center shield, and the horizontal displacement of the ground shield on the bushing's electric field distribution. Therefore, variations in these three parameters were selected as the primary research objects. The center conductor radius was studied within the range of 80 to 95 mm, with a 1 mm step size. The horizontal displacement of the center shield was studied within the range of -10 to 20 mm, with a positive rightward shift and a 5 mm step size. The horizontal displacement of the ground shield was studied within the range of -10 to 8 mm, with a positive rightward shift and a 1 mm step size.

[0044] S3. To simplify the calculation, retain the porcelain shed skirt feature at the maximum field strength and set a path here. Use the Maxwell midfield calculator function to edit the tangential field strength E. m2 Calculate the formula and apply it to this path, including:

[0045] S31, use the Maxwell centerline tool to draw the path of the porcelain sheath skirt at the maximum field strength, such as Figure 2 As shown;

[0046] S32. Use the field calculator function to edit the tangential field strength E m2 Calculate the formula and apply it to this path, Where MagE is the field strength at point P, nE is the radial field strength at point P, and P is a point on the set path;

[0047] S33. Set the tangential field strength E in the Maxwell result. m2 Result report.

[0048] S4. Under rated phase voltage, observe the effect of single structural parameter change on tangential field strength E through target optimization function in Maxwell. m2 The influence of the structure parameters is determined, and the research range of the structural parameters is determined; the research range of the parameters is comprehensively optimized, and the three structural parameters are set to change together to optimize the structural parameters of the ultra-high voltage insulating bushing, which specifically includes the following steps:

[0049] S41. Under rated phase voltage, use the target optimization function in Maxwell to select the parameter option, set the corresponding structural parameter step size, and observe the effect of the change of a single structural parameter on the tangential field strength E. m2The influence of , determine the research range of structural parameters;

[0050] S42, through the target optimization function in Maxwell, select the optimization option, set the three structural parameters to change together, and set the tangential field strength value E m2 ≤0.4kV / mm, select the “adaptive multi-objective optimization” method to optimize the structural parameters of the ultra-high voltage insulating bushing.

[0051] S5. Obtain optimized UHV insulation bushing structural parameters, import the parameters into Maxwell for verification, and select the optimal parameters. The specific steps are as follows:

[0052] S51. Import the optimized UHV insulation bushing structural parameters into the UHV insulation bushing model under rated phase voltage for verification. Based on the comprehensive analysis results and the design requirements of process manufacturing, three sets of appropriate optimization parameters are selected.

[0053] S52. Import the optimized parameters into the ultra-high voltage insulation bushing model under lightning impulse overvoltage for verification to determine the optimal parameters.

[0054] This step uses the finite element method to establish an electric field calculation model for the ultra-high voltage bushing model. Material properties are assigned to each component of the model, and a floating potential is applied to the inner shield. The terminal block is set as the high-voltage side, and the outer shield is set as the ground terminal. The calculated results are plotted and analyzed, and the optimal parameters are selected after comparing the results. Figure 3 is the tangential field strength of the path set before and after optimization, where Figure 3 (a) is the tangential field strength of the path set before optimization, Figure 3 (b) is the tangential field strength E of the optimized path m2 As can be seen from the figure, the tangential field strength value before optimization is greater than 0.4kV / mm; after optimization, the tangential field strength value is less than 0.4kV / mm, which meets the bushing design standards and the optimization effect is obvious.

[0055] like Figure 4 As shown, the present invention provides a device for simulating, analyzing and optimizing the insulation characteristics of an ultra-high voltage insulating bushing, comprising:

[0056] The model building unit uses Maxwell's parametric modeling function to build a two-dimensional model of the ultra-high voltage insulating bushing;

[0057] The parameter optimization unit sets the radius of the central conductor, the horizontal displacement of the inner shield, and the horizontal displacement of the ground shield as global variables based on the established two-dimensional model of the ultra-high voltage insulating bushing, and optimizes them as structural parameters;

[0058] Path setting unit, retain the porcelain shed skirt characteristics at the maximum field strength, and set a path here, use the Maxwell midfield calculator function to edit the tangential field strength E m2 Calculate the formula and apply it to this path;

[0059] The structural parameter optimization unit uses the target optimization function in Maxwell to observe the effect of a single structural parameter change on the tangential field strength E under rated phase voltage. m2 The influence of the three structural parameters is determined to determine the research range of the structural parameters; the research range of the parameters is comprehensively optimized, and the three structural parameters are set to change together to optimize the structural parameters of the ultra-high voltage insulating bushing;

[0060] The optimal parameter confirmation unit imports the optimized ultra-high voltage insulating bushing structural parameters into Maxwell for verification and selects the optimal parameters.

[0061] The present invention also provides a system for simulating, analyzing and optimizing the insulation characteristics of an ultra-high voltage insulating bushing, comprising: a processor and a memory coupled to the processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the steps of the method for simulating, analyzing and optimizing the insulation characteristics of an ultra-high voltage insulating bushing are implemented.

[0062] Those skilled in the art will appreciate that the embodiments of the present application can be provided as methods, systems, or computer program products. Therefore, the present application can adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application can adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) that contain computer-usable program code.

[0063] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the steps in the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0064] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.

[0065] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing the instructions executed on the computer or other programmable device for implementing the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0066] Although the present invention has been described in detail above using general descriptions and specific embodiments, it will be apparent to those skilled in the art that modifications and improvements may be made based on the present invention. Therefore, such modifications and improvements, which do not depart from the spirit of the present invention, are intended to be within the scope of protection claimed herein.

Claims

1. A simulation analysis and optimization method for the insulation characteristics of an ultra-high voltage insulating bushing, characterized in that: The following steps are involved: 1) Using Maxwell’s parametric modeling capabilities, a two-dimensional model of the ultra-high voltage insulating bushing was established; 2) Based on the established two-dimensional model of the ultra-high voltage insulating bushing, the radius of the central conductor, the horizontal displacement of the inner shield, and the horizontal displacement of the ground shield are set as global variables and optimized as structural parameters; 3) Keep the porcelain shed features at the maximum field strength and set a path here to edit the tangential field strength E using the Maxwell midfield calculator function. m2 Calculate the formula and apply it to this path; 4) Under rated phase voltage, the target optimization function in Maxwell is used to observe the effect of single structural parameter change on the tangential field strength E m2 The influence of the three structural parameters is determined to determine the research range of the structural parameters; the research range of the parameters is comprehensively optimized, and the three structural parameters are set to change together to optimize the structural parameters of the ultra-high voltage insulating bushing; 5) Import the optimized ultra-high voltage insulating bushing structural parameters into Maxwell for verification and select the optimal parameters.

2. The method for simulation analysis and optimization of insulation characteristics of an ultra-high voltage insulating bushing according to claim 1, characterized in that: The Maxwell parameterized modeling function in step 1) specifically includes: Based on the simplified ultra-high voltage insulating bushing structure, a 1:1 two-dimensional parametric simulation model was established in Maxwell. The center conductor radius, the horizontal displacement of the inner shield, and the horizontal displacement of the ground shield were selected as structural parameters. The two-dimensional model of the ultra-high voltage insulating bushing was adjusted by adjusting the values ​​of the structural parameters.

3. The method for simulation analysis and optimization of insulation characteristics of an ultra-high voltage insulating bushing according to claim 1, characterized in that: In step 2), the radius of the central conductor is in the range of 80 to 95 mm, with a step length of 1 mm.

4. The method for simulation analysis and optimization of insulation characteristics of an ultra-high voltage insulating bushing according to claim 1, characterized in that: In step 2), the horizontal displacement of the inner shield is within the range of -10 to 20 mm, with rightward displacement being positive, and the step length being 5 mm.

5. The method for simulation analysis and optimization of insulation characteristics of an ultra-high voltage insulating bushing according to claim 1, characterized in that: In step 2), the horizontal displacement of the ground shield is within the range of -10 to 8 mm, with rightward displacement being positive and a step length of 1 mm.

6. The method for simulation analysis and optimization of insulation characteristics of an ultra-high voltage insulating bushing according to claim 1, characterized in that: The step 3) is specifically as follows: 31) Use the Maxwell centerline tool to draw the path of the porcelain sheath at the point of maximum retained field strength; 32) Use the field calculator function to edit the tangential field strength E m2 Calculate the formula and apply it to this path; 33) Set the tangential field strength E in the Maxwell result. m2 Result report.

7. The method for simulation analysis and optimization of insulation characteristics of an ultra-high voltage insulating bushing according to claim 6, characterized in that: Tangential field strength E m2 The calculation formula Where MagE is the field strength value at point P, nE is the radial field strength value at point P, and P is a point on the set path.

8. The method for simulation analysis and optimization of insulation characteristics of an ultra-high voltage insulating bushing according to claim 1, characterized in that: The step 4) is specifically as follows: 41) Under the rated phase voltage, use the target optimization function in Maxwell to select the parameter option, set the corresponding structural parameter step size, and observe the effect of the change of a single structural parameter on the tangential field strength E. m2 The influence of , determine the research range of structural parameters; 42) Comprehensive optimization parameter research range, through the target optimization function in Maxwell, select the optimization option, set the three structural parameters to change together, set the tangential field strength value E m2 ≤0.4kV / mm, select the optimization method to optimize the structural parameters of the ultra-high voltage insulating bushing.

9. The method for simulation analysis and optimization of insulation characteristics of an ultra-high voltage insulating bushing according to claim 1, characterized in that: The step 5) is specifically as follows: 51) The optimized UHV insulation bushing structural parameters are imported into the UHV insulation bushing model under rated phase voltage for verification. The comprehensive analysis results and the design requirements of process manufacturing are used to select three sets of appropriate optimization parameters; 52) The optimized parameters are imported into the ultra-high voltage insulation bushing model under lightning impulse overvoltage for verification to determine the optimal parameters.

10. A device for simulating, analyzing and optimizing the insulation characteristics of an ultra-high voltage insulating bushing, characterized in that: include: The model building unit uses Maxwell's parametric modeling function to build a two-dimensional model of the ultra-high voltage insulating bushing; The parameter optimization unit sets the radius of the central conductor, the horizontal displacement of the inner shield, and the horizontal displacement of the ground shield as global variables based on the established two-dimensional model of the ultra-high voltage insulating bushing, and optimizes them as structural parameters; Path setting unit, retain the porcelain shed skirt characteristics at the maximum field strength, and set a path here, use the Maxwell midfield calculator function to edit the tangential field strength E m2 Calculate the formula and apply it to this path; The structural parameter optimization unit uses the target optimization function in Maxwell to observe the effect of a single structural parameter change on the tangential field strength E under rated phase voltage. m2 The influence of , determine the research range of structural parameters; Comprehensively optimize the parameter research range, set the three structural parameters to change together, and optimize the structural parameters of the ultra-high voltage insulating bushing; The optimal parameter confirmation unit imports the optimized ultra-high voltage insulating bushing structural parameters into Maxwell for verification and selects the optimal parameters.

Images