Annealing method and annealing device

Abstract

The present invention provides an annealing method and an annealing device using the annealing method. The annealing method includes controlling the annealing part to provide an annealing medium and act on a sub-area of ​​the first area through the main control part, then controlling the annealing medium to act on a sub-area of ​​the second area, and then repeating step S1 until the annealing medium completes the annealing treatment of the first area and the second area, so that the annealing medium acts back and forth in different areas, effectively reducing the heat accumulation effect.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to an annealing method and an annealing device. Background Art

[0002] During traditional laser annealing scanning, when one laser scan is completed and the next adjacent area is scanned, the temperature of the previous area has not yet recovered and is still at a relatively high temperature. When scanning the next area, the superposition of temperatures will cause the effect of subsequent annealing to be affected by the effect of the previous annealing.

[0003] Therefore, it is necessary to develop a new annealing method and annealing device to solve the above problems existing in the prior art. Summary of the invention

[0004] The object of the present invention is to provide an annealing method and an annealing device using the annealing method, so as to help reduce the heat accumulation effect.

[0005] The annealing method of the present invention comprises the following steps:

[0006] S0: providing an annealing device and a substrate to be processed carried by the annealing device, wherein the annealing device comprises a main control unit and an annealing unit which are communicatively connected to each other, and the surface of the substrate to be processed comprises a plurality of sub-areas located in the first area and a plurality of sub-areas located in the second area;

[0007] S1: After the main control unit controls the annealing unit to provide an annealing medium and act on a sub-area of ​​the first area, the annealing medium is controlled to act on a sub-area of ​​the second area;

[0008] S2: Repeat step S1 until the annealing medium completes the annealing process on the first region and the second region.

[0009] The beneficial effect of the annealing method of the present invention is that: in the step S1, after the main control unit controls the annealing unit to provide the annealing medium and act on a sub-zone of the first zone, the annealing medium is controlled to act on a sub-zone of the second zone, and then the step S1 is repeated until the annealing medium completes the annealing treatment of the first zone and the second zone, so that the annealing medium acts back and forth in different areas, effectively reducing the heat accumulation effect.

[0010] Preferably, the plurality of sub-regions of the first region and the plurality of sub-regions of the second region are arranged sequentially along the same direction. In the step S1, after the main control unit controls the annealing unit to provide an annealing medium and acts on a sub-region of the first region, the step of controlling the annealing medium to act on a sub-region of the second region comprises:

[0011] S11: After the main control unit controls the annealing medium to act on the Xth sub-area of ​​the first area, the main control unit controls the annealing medium to act on the Xth sub-area of ​​the second sub-area;

[0012] S12: After controlling the annealing medium to act on the X+1th sub-region of the first region through the main control unit, controlling the annealing medium to act on the X+1th sub-region of the second region;

[0013] X is a positive integer greater than 0.

[0014] Preferably, the annealing device includes a temperature detection unit that is communicatively connected to the main control unit and is arranged on the substrate to be processed, and the step S1 includes: in a process in which the main control unit controls the annealing medium to act on a scanning area of ​​a sub-area, the temperature information of the to-be-scanned area of ​​the sub-area that is adjacent to the scanning area and arranged sequentially along the scanning direction of the annealing medium is obtained by the temperature detection unit and fed back to the main control unit; the main control unit determines whether to adjust the action intensity of the annealing medium according to the temperature information of the to-be-scanned area.

[0015] Further preferably, the annealing device includes a mobile control unit communicatively connected to the main control unit, the main control unit stores a reference temperature range, and the step of the main control unit judging whether to adjust the action intensity of the annealing medium according to the temperature information of the area to be scanned includes: after the main control unit judges that the action intensity of the annealing medium needs to be adjusted according to the relationship between the temperature of the area to be scanned and the maximum value and the minimum value of the reference temperature range, the main control unit controls the mobile control unit to adjust the angle between the exit path of the annealing medium and the substrate to be processed, so as to achieve the adjustment of the action intensity of the annealing medium.

[0016] Further preferably, the mobile control unit includes at least 2 piezoelectric control units, and the step of adjusting the size of the angle between the exit path of the annealing medium and the substrate to be processed by controlling the mobile control unit includes: the main control unit controls the voltage of at least 2 of the piezoelectric control units to cause different degrees of deformation of different mobile control units, thereby adjusting the size of the angle between the exit path of the annealing medium and the substrate to be processed.

[0017] Further preferably, the annealing device includes an off-chip area adjacent to the area to be scanned. Before executing the step S1, the annealing medium is controlled by the main control unit to act on the off-chip area, and the temperature information of the area to be scanned close to the sub-area is obtained by the temperature detection unit and fed back to the main control unit.

[0018] The annealing device of the present invention comprises:

[0019] A carrying portion, used for carrying a substrate to be processed;

[0020] A main control unit and an annealing unit are communicatively connected to each other, and the annealing unit provides an annealing medium under the control of the main control unit and controls the annealing medium to act on different positions of the substrate to be processed.

[0021] The beneficial effect of the annealing device described in the present invention is that the main control unit and the annealing unit are connected to each other for communication, and the annealing unit provides an annealing medium under the control of the main control unit and controls the annealing medium to act on different positions of the substrate to be processed, and can effectively reduce the heat accumulation effect by driving the annealing medium to act back and forth in different areas.

[0022] Preferably, the temperature detection unit is communicatively connected to the main control unit to obtain and feed back to the main control unit temperature information of the area to be scanned adjacent to the scanning area of ​​the substrate to be processed.

[0023] Further preferably, the number of the temperature detection parts is 2, which are respectively disposed on both sides of the annealing part and arranged along the scanning path of the annealing medium.

[0024] Preferably, the mobile control unit is communicatively connected to the main control unit, and the main control unit determines whether it is necessary to drive the mobile control unit to deform by voltage control according to the temperature information of the area to be scanned, so as to adjust the intensity of the annealing medium.

[0025] Further preferably, the mobile control unit includes at least 2 piezoelectric control units configured to produce different degrees of deformation under the voltage control of the main control unit, and the intensity of the annealing medium is adjusted by adjusting the angle between the exit path of the annealing medium and the substrate to be processed. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A schematic diagram of the working state of an annealing device according to an embodiment of the present invention;

[0027] Figure 2 for Figure 1 A top view of the substrate to be processed is shown;

[0028] Figure 3 for Figure 2 A top view of the fifth sub-area shown;

[0029] Figure 4 for Figure 1 A schematic structural diagram of the first movement control unit shown;

[0030] Figure 5 The graph is a corresponding relationship curve between the angle between the annealing medium emission path and the substrate to be processed and the reflection intensity of the annealing medium according to an embodiment of the present invention. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0032] The embodiment of the present invention provides an annealing method and an annealing device using the annealing method, so as to help reduce the heat accumulation effect.

[0033] The meaning of the "communication connection" described in the embodiment of the present invention is: a method for implementing the transmission interaction of signals between different devices, which can be specifically implemented through a wired connection method or a wireless transmission method.

[0034] The “scanning area” described in the embodiment of the present invention means that after the annealing medium acts on the surface of the substrate to be processed, the surface of the substrate to be processed is the area contacted or projected by the annealing medium.

[0035] The “area to be scanned” described in the embodiment of the present invention means: the surface of the substrate to be processed or the area close to the substrate to be processed that is not contacted or projected by the annealing medium.

[0036] Reference Figure 1 , Figure 1 The annealing device shown includes a carrier 11 for carrying a substrate 2 to be processed, and a main control unit 13 and an annealing unit 12 that are communicatively connected to each other. The annealing unit 12 provides an annealing medium 3 under the control of the main control unit 13 and controls the annealing medium 3 to act on different positions of the substrate 2 to be processed.

[0037] In some embodiments, the main control unit 13 controls the strength and action direction of the annealing medium 3 provided by the annealing unit 12. In some specific embodiments, the main control unit 13 is a host computer.

[0038] In some embodiments, the annealing unit 12 is a laser.

[0039] In some embodiments, the annealing medium provided by the annealing unit 12 is a laser beam.

[0040] In some embodiments, the substrate 2 to be processed is a semiconductor device to be annealed, and the semiconductor device can achieve at least one of the following effects after being acted upon by the annealing medium 3: annealing of the source, drain or gate, and activation of impurities.

[0041] In some embodiments, reference Figure 2 The surface to be processed of the substrate 2 to be processed includes adjacent first area 21 and second area 22. The first area 21 includes a first sub-area 211, a second sub-area 212, a third sub-area 213 and a fourth sub-area 214. The second area includes a fifth sub-area 221, a sixth sub-area 222, a seventh sub-area 223 and an eighth sub-area 224.

[0042] In the step S1 of the annealing method of some embodiments, referring to Figure 1 and Figure 2 After the main control unit 13 controls the annealing unit 12 to provide the annealing medium 3 and act on a sub-zone of the first zone 21, the annealing medium 113 is controlled to act on a sub-zone of the second zone 22, so that the annealing medium 3 acts back and forth in different zones, effectively reducing the heat accumulation effect.

[0043] In some specific embodiments, after the main control unit 13 controls the annealing medium 3 to scan along direction A from the left edge of the first sub-zone 211 to the right edge of the first sub-zone 211, the main control unit 13 controls the annealing unit 12 not to emit the annealing medium 3, and then moves the annealing unit 12 along direction B to the right edge of the fifth sub-zone 221 located in the second zone 22, and then controls the annealing medium 3 to be emitted and scanned from the right edge of the fifth sub-zone 221 toward the left edge.

[0044] In some embodiments, after the step S1 is completed, step S2 is performed: the step S1 is repeated until the annealing medium 3 completes the annealing process on the first area 21 and the second area 22 .

[0045] In some embodiments, the number of sub-regions of the first zone 21 and the second zone 22 and the positional relationship between the sub-regions can meet the following conditions: after controlling the annealing medium 3 to act sequentially on the Xth sub-region of the first zone 21 and the Xth sub-region of the second zone 22, in the process of sequentially acting on the X+1th sub-region of the first zone 21 and the X+1th sub-region of the second zone 22, it can always be ensured that there is at least one sub-region between a sub-region of the first zone 21 and a sub-region of the second zone 22 sequentially acted by the annealing medium 3, which is beneficial to avoid adverse effects on the annealing treatment effect of the sub-regions that have completed the annealing treatment.

[0046] In some embodiments, the first region 21 and the second region 22 have the same area, and the number of sub-regions in the first region 21 and the number of sub-regions in the second region 22 are the same.

[0047] In some embodiments, the number of sub-regions in the first region 21 is different from the number of sub-regions in the second region 22, and the sub-regions are arranged sequentially along the same direction. The number of sub-regions in the first region 21 is one more than the number of sub-regions in the second region 22. In this case, it is preferred to control the annealing medium 3 to act on the first sub-region of the first region 21 first.

[0048] In some embodiments, the number of sub-regions in the first region 21 is at least 2 more than the number of sub-regions in the second region 22 .

[0049] In some embodiments, adjacent sub-areas extend along the scanning path and are parallel to each other.

[0050] In some embodiments, reference Figure 2 The first sub-region 211, the second sub-region 212, the third sub-region 213, the fourth sub-region 214, the fifth sub-region 221, the sixth sub-region 222, the seventh sub-region 223 and the eighth sub-region 224 are arranged sequentially along the B direction.

[0051] In some embodiments, the step S1 includes S11: after the main control unit 13 controls the annealing medium 3 to act on the first sub-zone 211, the annealing medium 3 is controlled to act on the fifth sub-zone 221. Then, the step S12 is performed: after the main control unit 13 controls the annealing medium 3 to act on the second sub-zone 212, the annealing medium 3 is controlled to act on the sixth sub-zone 222. Finally, the main control unit 13 controls the annealing medium 3 to act on the third sub-zone 213, the seventh sub-zone 223, the fourth sub-zone 214 and the eighth sub-zone 224 in sequence, so as to complete the annealing process on the first zone 21 and the second zone 22.

[0052] In some embodiments, the carrying portion 11 is configured to be movable relative to the annealing portion 12 , and the relative position of the annealing portion 12 and different sub-zones is changed by adjusting the position of the carrying portion 11 .

[0053] In some embodiments, the annealing device further includes a temperature detection unit, and the temperature detection unit is configured to obtain and feed back to the main control unit 13 the temperature information of a to-be-scanned area of ​​the to-be-processed substrate 2 .

[0054] In the embodiment of the present invention, the number and assembly positions of the temperature detection parts can be flexibly adjusted according to process requirements.

[0055] Reference Figure 1 and Figure 2 , Figure 1 The annealing device shown in the figure comprises a first temperature detection unit 141 and a second temperature detection unit 142 arranged on both sides of the annealing unit 12. The first temperature detection unit 141 and the second temperature detection unit 142 are arranged along a scanning path, and the scanning path is Figure 2 The first temperature detection unit 141 and the second temperature detection unit 142 are arranged to obtain and feed back the temperature information of the area to be scanned to the main control unit 13, so that the action intensity of the annealing medium 3 can be adjusted in time before the annealing medium 3 acts on the area to be scanned, thereby maximizing the process effect of the annealing treatment.

[0056] In some embodiments, the sampling and feedback frequency of the temperature detection unit is controlled to be higher than the scanning frequency of the annealing unit 12 , so as to provide temperature feedback to the main control unit 13 in a timely manner.

[0057] In some embodiments, reference Figure 1 and Figure 3 Taking the example of controlling the annealing medium 3 to act on the fifth sub-zone 221 and scanning along the A direction by the main control unit 13, the step S1 includes: in the process of controlling the annealing medium 3 to act on the first area 31 of the fifth sub-zone 221 by the main control unit 13, the temperature information of the second area 32 of the fifth sub-zone 221 is obtained by the first temperature detection unit 141 and fed back to the main control unit 13; the main control unit 13 determines whether to adjust the action intensity of the annealing medium 3 according to the temperature information of the second area 32 of the fifth sub-zone 221. In this process, the first area 31 is the scanning area of ​​the fifth sub-zone 221, and the second area 32 is the area to be scanned of the fifth sub-zone 221.

[0058] In some embodiments, different regions of each sub-region are along the scanning path, i.e. Figure 2 The number of regions contained in each sub-area and the area of ​​each region are adaptively adjusted according to the conditions of the annealing medium 3 acting on the region, so as to control the annealing medium 3 to perform sufficient and uniform annealing treatment on the acted region.

[0059] In some embodiments, reference Figure 1 and Figure 3 When the main control unit 13 controls the annealing medium 3 to scan in the opposite direction of A and acts on the second area 32, the temperature information of the first area 31 is obtained through the second temperature detection unit 142 and fed back to the main control unit 13. In this process, the second area 32 is the scanning area of ​​the fifth sub-area 221, and the first area 31 is the area to be scanned of the fifth sub-area 221.

[0060] In some embodiments, reference Figure 3 In the fifth sub-area 221 , the first region 31 is adjacent to the second region 32 .

[0061] In some embodiments, the temperature detection unit is a temperature sensor.

[0062] In some embodiments, the temperature detection unit is a non-contact temperature sensor, and the non-contact temperature sensor is configured to move synchronously with the annealing unit 12 .

[0063] In some embodiments, reference Figure 1 The first temperature detection part 141 and the second temperature detection part 142 are respectively communicated and connected through the main control part 13 to control the first temperature detection part 141 and the second temperature detection part 142 to move synchronously with the annealing part 12.

[0064] In some embodiments, reference Figure 1 and Figure 3 , the first region 31 is located near the edge of the fifth sub-region 221, Figure 1 The annealing device shown includes an off-chip area 33 adjacent to the first area 31. Before executing the step S1, the main control unit 13 controls the annealing medium 3 to act on the off-chip area 33, and the first temperature detection unit 141 obtains and feeds back the temperature information of the first area 31 to the main control unit 13. In this process, the first area 31 is the area to be scanned, and the off-chip area 33 is the scanning area.

[0065] In some embodiments, reference Figure 1 and Figure 3 The main control unit 13 stores a reference temperature range. Taking the case where the main control unit 13 controls the annealing medium 3 to act on the fifth sub-area 221 and scans along the A direction as an example, in step S1, the main control unit 13 compares the reference temperature with the temperature information of the second area 32, and determines whether to adjust the intensity of the annealing medium according to the relationship between the temperature of the second area 32 and the maximum and minimum values ​​in the reference temperature range.

[0066] In some embodiments, the main control unit 13 stores a plurality of reference temperature ranges, which correspond one-to-one to the process required temperature ranges of different areas to be scanned, so as to achieve separate regulation of different areas to be scanned.

[0067] In some embodiments, the main control unit 13 directly adjusts the power of the annealing medium 3 emitted by the annealing unit 12 to adjust its action intensity according to the comparison result between the information fed back by the temperature detection unit and the reference temperature range.

[0068] In some embodiments, the main control unit 13 adjusts the angle between the emission path of the annealing medium 3 and the substrate 2 to be processed according to the comparison result of the information fed back by the temperature detection unit and the reference temperature range to adjust the intensity of the annealing medium 3. Specifically, when the main control unit 13 determines that the temperature fed back by the temperature detection unit exceeds the maximum value of the reference temperature range, the position of the annealing unit 12 and the power of the emitted annealing medium 3 are controlled to remain unchanged, and the angle between the emission path of the annealing medium 3 and the substrate 2 to be processed is adjusted by adjusting the height and inclination of the carrier 11 relative to the annealing unit 12, thereby increasing the reflectivity of the annealing medium 3 to reduce the absorbed power.

[0069] In some embodiments, the annealing device further includes a movement control unit, and the movement control unit is configured to generate deformation under the control of the main control unit 13, so as to adjust the angle between the exit path of the annealing medium 3 and the substrate 2 to be processed.

[0070] In some embodiments, the movement control unit includes at least two piezoelectric control units. The at least two piezoelectric control units are configured to produce different degrees of deformation under the voltage control of the main control unit 13, so as to adjust the angle between the exit path of the annealing medium 3 and the substrate 2 to be processed.

[0071] In the embodiment of the present invention, the number and arrangement of the piezoelectric control parts can be flexibly adjusted according to process requirements.

[0072] In some embodiments, reference Figure 1 and Figure 4 , Figure 4 The piezoelectric control part shown includes a plurality of piezoelectric units 4 arranged in sequence along the axial direction 111 of the carrier part 11, each of the piezoelectric units 4 includes a first electrode 42, a piezoelectric layer 41 and a second electrode 43 arranged in sequence along the axial direction 111 perpendicular to the carrier part 11, the first electrodes 42 are electrically connected in sequence and then electrically connected to the main control part 13, and the second electrodes 43 are electrically connected in sequence and then electrically connected to the main control part 13, so that adjacent piezoelectric layers 41 have opposite polarization directions under the drive of the main control part 13.

[0073] Specifically, each of the piezoelectric units 4 is polarized under the excitation of the driving voltage of the main control unit 13, the polarization direction and the direction of the external electric field are parallel to each other and are both horizontal, and each of the piezoelectric units 4 vibrates along its own axial direction, that is, vibrates up and down along the axial direction 111 of the bearing part 11.

[0074] In some embodiments, reference Figure 4An interlayer isolation layer 5 is provided between adjacent piezoelectric units 4 to avoid signal interference between them.

[0075] In some embodiments, reference Figure 1 The first piezoelectric control unit 151 and the second piezoelectric control unit 152 are arranged on the bottom surface of the carrier 11 and are respectively connected to the main control unit 13. The main control unit 13 controls the voltage of the first piezoelectric control unit 151 and the second piezoelectric control unit 152 respectively, and specifically controls the first piezoelectric control unit 151 and the second piezoelectric control unit 152 to vibrate along the axis direction 111 of the carrier 11 and generate different deformation amounts relative to their respective initial states by controlling the different magnitudes of the applied voltages, so that the carrier 11 is tilted relative to the annealing unit 12, thereby changing the angle between the annealing medium 3 and the substrate 2 to be processed.

[0076] In some embodiments, the bottom surface of the carrying portion 11 is along the scanning path, that is, Figure 2 At least two piezoelectric control parts are sequentially arranged in the direction A shown, and the specific number and the spacing between different piezoelectric control parts can be flexibly adjusted according to process requirements.

[0077] In some embodiments, at least two of the piezoelectric control parts sequentially arranged along the scanning path at the position corresponding to the bottom surface of the carrier 11 and one of the sub-areas constitute a piezoelectric control group. Several piezoelectric control groups can be arranged on the bottom surface of the carrier 11 in a one-to-one correspondence with several of the sub-areas. The number of piezoelectric control groups, the relative position relationship between different piezoelectric control groups, and the number and relative position relationship of piezoelectric control parts in the same piezoelectric control group can be flexibly adjusted according to process requirements.

[0078] In the embodiment of the present invention, the main control unit 13 is communicatively connected to all the piezoelectric control units, and at least two of the piezoelectric control units that need to be started for control can be flexibly selected according to process requirements, so that the angle between the annealing medium 3 and the substrate 2 to be processed can be adjusted according to requirements.

[0079] In some embodiments, reference Figure 1 , Figure 3 and Figure 5Taking the example of controlling the annealing medium 3 to act on the fifth sub-area 221 and scanning along the A direction by the main control unit 13, in order to maximize the utilization of the energy of the annealing medium 3, the main control unit 13 should reasonably control the power of the annealing medium 3 and the angle between the exit path of the annealing medium 3 and the substrate 2 to be processed within the range of [X1, X2] during the process of controlling the annealing medium 3 to act on the first area 31, so that the energy of the annealing medium 3 acting on the first area 31 is absorbed by the first area 31 to the maximum extent, and the temperature of the second area 32 to be annealed adjacent to the first area 31 should be within the reference temperature range.

[0080] When the main control unit 13 determines that the temperature of the second area 32 to be annealed is greater than the maximum value in the reference temperature range, it means that the power of the annealing medium 3 is high. After ensuring that the power of the annealing medium 3 remains unchanged and the annealing treatment of the first area 31 is completed, the main control unit 13 adjusts the angle between the exit path of the annealing medium 3 and the substrate 2 to be processed according to the reference temperature range and the temperature of the second area 32, and then drives the annealing medium 3 to act on the second area 32, thereby adjusting the intensity of the annealing medium 3 acting on the second area 32. To achieve the above purpose, the main control unit 13 controls the first piezoelectric control unit 151 and the second piezoelectric control unit 152 to have different deformation amounts in the vertical direction, so that the angle between the exit path of the annealing medium 3 and the substrate 2 to be processed increases or decreases until it is greater than or equal to the value of X1 and less than or equal to the value of X2.

[0081] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. An annealing device, characterized in that: include: A carrying portion, used for carrying a substrate to be processed; A main control unit and an annealing unit are communicatively connected to each other, wherein the annealing unit provides an annealing medium under the control of the main control unit and controls the annealing medium to act on different positions of the substrate to be processed; At least two temperature detection parts are connected to the main control part in communication and are respectively arranged on both sides of the annealing part and arranged along the scanning path of the annealing medium, and the temperature detection parts are connected to the main control part in communication to obtain and feed back to the main control part the temperature information of the area to be scanned adjacent to the scanning area of ​​the substrate to be processed; A mobile control unit is arranged on the bearing unit and is communicatively connected to the main control unit. The main control unit determines whether it is necessary to drive the mobile control unit to deform by voltage control according to the temperature information of the area to be scanned, so as to adjust the intensity of the annealing medium.

2. The annealing device according to claim 1, characterized in that: The mobile control unit includes at least two piezoelectric control units configured to produce different degrees of deformation under the voltage control of the main control unit, and the intensity of the annealing medium is adjusted by adjusting the angle between the exit path of the annealing medium and the substrate to be processed.

3. An annealing method, applied to the annealing device according to any one of claims 1 to 2, characterized in that: The following steps are involved: S0: providing an annealing device and a substrate to be processed carried by the annealing device, wherein the annealing device comprises a main control unit and an annealing unit which are communicatively connected to each other, and the surface of the substrate to be processed comprises a plurality of sub-areas located in the first area and a plurality of sub-areas located in the second area; S1: After the main control unit controls the annealing unit to provide an annealing medium and acts on a sub-zone of the first zone, the annealing medium is then controlled to act on a sub-zone of the second zone, which includes: in the process of controlling the annealing medium to act on a scanning area of ​​a sub-zone by the main control unit, the temperature detection unit obtains and feeds back to the main control unit the temperature information of the to-be-scanned area of ​​the sub-zone that is adjacent to the scanning area and arranged sequentially along the scanning direction of the annealing medium; the main control unit determines whether to adjust the action intensity of the annealing medium according to the temperature information of the to-be-scanned area; S2: Repeat step S1 until the annealing medium completes the annealing process on the first region and the second region.

4. The annealing method according to claim 3, characterized in that: The plurality of sub-regions of the first region and the plurality of sub-regions of the second region are arranged sequentially along the same direction. In the step S1, after the main control unit controls the annealing unit to provide an annealing medium and acts on a sub-region of the first region, the step of controlling the annealing medium to act on a sub-region of the second region comprises: S11: After the main control unit controls the annealing medium to act on the Xth sub-area of ​​the first area, the main control unit controls the annealing medium to act on the Xth sub-area of ​​the second area; S12: After controlling the annealing medium to act on the X+1th sub-region of the first region through the main control unit, controlling the annealing medium to act on the X+1th sub-region of the second region; X is a positive integer greater than 0.

5. The annealing method according to claim 3, characterized in that: The annealing device includes a mobile control unit that is in communication with the main control unit, the main control unit stores a reference temperature range, and the main control unit determines whether to adjust the intensity of the annealing medium according to the temperature information of the area to be scanned, including: After the main control unit determines that the intensity of the annealing medium needs to be adjusted based on the relationship between the temperature of the area to be scanned and the maximum and minimum values ​​of the reference temperature range, the main control unit controls the mobile control unit to adjust the angle between the exit path of the annealing medium and the substrate to be processed to achieve the adjustment of the intensity of the annealing medium.

6. The annealing method according to claim 5, characterized in that: The mobile control unit includes at least 2 piezoelectric control units, and the step of adjusting the angle between the exit path of the annealing medium and the substrate to be processed by controlling the mobile control unit includes: the main control unit controls the voltage of at least 2 of the piezoelectric control units to cause different piezoelectric control units to produce different degrees of deformation, thereby adjusting the angle between the exit path of the annealing medium and the substrate to be processed.

7. The annealing method according to claim 3, characterized in that: The annealing device includes an off-chip area adjacent to the area to be scanned. Before executing step S1, the main control unit controls the annealing medium to act on the off-chip area, and the temperature information of the area to be scanned close to the sub-area is obtained and fed back to the main control unit through the temperature detection unit.

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