Bottom purge for semiconductor processing systems

Abstract

An example substrate processing system can include a plurality of processing regions. The system can include a transfer region enclosure defining a transfer region fluidically coupled with the plurality of processing regions. The system can include a plurality of substrate supports, and each substrate support of the plurality of substrate supports can be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The system can include a transfer device including a rotatable shaft extending through the transfer region enclosure. The transfer device can include an end effector coupled with the rotatable shaft. The end effector can include a central hub defining a central aperture fluidically coupled with a purge source. The end effector can also include a plurality of arms having a number of arms equal to a number of substrate supports of the plurality of substrate supports.

Description

[0001] Cross-reference to related applications

[0002] This application claims the benefit and priority of U.S. Patent Application No. 16 / 844,121, filed April 9, 2020, entitled “BOTTOM PURGE FOR SEMICONDUCTORPROCESSING SYSTEM,” the entire contents of which are incorporated herein by reference. Technical Field

[0003] This technology relates to semiconductor processes and equipment. More specifically, this technology relates to semiconductor substrate supports. Background Technology

[0004] Semiconductor processing systems typically utilize clustering tools to integrate multiple process chambers together. This configuration can facilitate the execution of several sequential processing operations without removing the substrate from the controlled processing environment, or it can allow similar processes to be performed on multiple substrates simultaneously in different chambers. These chambers can include, for example, degassing chambers, pretreatment chambers, transfer chambers, chemical vapor deposition chambers, physical vapor deposition chambers, etching chambers, metrology chambers, and other chambers. The combination of chambers in the clustering tool, as well as the operating conditions and parameters for running these chambers, are selected to fabricate specific structures using specific process formulations and flow profiles.

[0005] Some processing systems may include multiple processing and transfer regions connected together. Depending on the layout and configuration of the components, precursors delivered through the system may flow freely into and out of different regions. Deposition or damage may occur within the system as deposited and cleaned precursors (including plasma enhancement materials of the precursors) may enter and exit multiple regions. Furthermore, specific layouts and flow patterns may create dead zones within the system, which may cause precursors to accumulate in specific areas, potentially leading to depletion of different regions of the system.

[0006] Therefore, there is a need for improved systems and components capable of efficiently flowing and discharging materials within semiconductor processing chambers and systems. This technology addresses these and other needs. Summary of the Invention

[0007] An exemplary substrate processing system may include multiple processing regions. The system may include a transfer region housing defining a transfer region fluidly coupled to the multiple processing regions. The system may include multiple substrate supports, each of which is vertically translatable between the transfer region and an associated processing region among the multiple processing regions. The system may include a transfer device including a rotatable shaft extending through the transfer region housing. The transfer device may include an end effector coupled to the rotatable shaft. The end effector may include a central hub defining a central aperture fluidly coupled to a purification source. The end effector may also include multiple arms having a number of arms equal to the number of substrate supports of the multiple substrate supports.

[0008] In some embodiments, the semiconductor processing chamber may include a plurality of purge channels having a number equal to the number of substrate supports of the plurality of substrate supports. Each of the plurality of purge channels may extend through a transfer region housing adjacent to an individual substrate support of the plurality of substrate supports. Each of the plurality of processing regions may be defined above at least partially by a separate cover stack, and each cover stack may include a pumping liner fluidly coupled to an exhaust port of the substrate processing system. Each pumping liner may define at least partially an exhaust flow path from each processing region for purge gas delivered through the plurality of purge channels. A rotatable shaft may define one or more orifices fluidly coupled to a purge source. The one or more orifices may be configured to deliver purge gas to a central volume of the transfer region defined at least partially by a central hub of a terminal actuator. The purge source may be configured to deliver greater than or about 75% of the purge gas delivered relative to the central orifice defined by the central hub through the one or more orifices. The plurality of substrate supports may include at least three substrate supports distributed around the transfer region. A transfer device may be centrally located among the plurality of substrate supports.

[0009] Some embodiments of this technology may cover a substrate processing system comprising multiple processing regions. The system may include a transfer region housing defining a transfer region fluidly coupled to the multiple processing regions. The system may include multiple substrate supports, each of which is vertically translatable between the transfer region and an associated processing region among the multiple processing regions. The system may include multiple purification channels defined by the transfer region housing. The number of purification channels may be equal to the number of substrate supports among the multiple substrate supports. The system may include a transfer device including a rotatable shaft extending through the transfer region housing. The transfer device may include an end effector coupled to the rotatable shaft. The end effector may include a central hub and may further include multiple arms having a number equal to the number of substrate supports among the multiple substrate supports.

[0010] In some embodiments, the central hub of the terminal actuator may define an orifice providing fluid inflow and outflow from the rotatable shaft of the transfer device to the transfer region. Each of the plurality of processing regions may be defined at least partially from above by a separate stack of caps. Each stack of caps may include a pumping liner fluidly coupled to an exhaust port of the substrate processing system. Each pumping liner may at least partially define an exhaust flow path from each processing region for purge gas delivered through a plurality of purge channels. The rotatable shaft may define one or more orifices fluidly coupled to a purge source. The one or more orifices may be configured to deliver purge gas to a central volume of the transfer region defined at least partially by the central hub of the terminal actuator.

[0011] Some embodiments of this technology may cover semiconductor processing methods. The methods may include delivering one or more processing precursors through multiple cap stacks of a substrate processing system. Each of the multiple cap stacks may fluidly enter and exit a processing region among multiple processing regions. Each processing region among the multiple processing regions may be at least partially defined by a cap stack among the multiple cap stacks and a substrate support among multiple substrate supports. The methods may include delivering purge gases to a transfer region of the substrate processing system through multiple purge channels extending through a transfer region housing defining a transfer region. The transfer region may be fluidly coupled to the multiple processing regions. The methods may include discharging one or more processing precursors and purge gases through a pumping liner of the multiple cap stacks.

[0012] In some embodiments, the substrate processing system may include a transfer device located in a transfer region. The transfer device may include a rotatable shaft extending through a housing of the transfer region. The transfer device may include a terminal actuator coupled to the rotatable shaft. The terminal actuator may include a central hub defining a central orifice fluidly coupled to a purge source. The terminal actuator may also include a plurality of arms having a number equal to the number of substrate supports of a plurality of substrate supports. The method may include delivering additional purge gas through the rotatable shaft from the central orifice defined by the central hub and delivering the additional purge gas into the transfer region. The rotatable shaft may define one or more orifices fluidly coupled to a purge source. The central volume of the transfer region may be at least partially defined by the central hub of the terminal actuator. The method may include delivering additional purge gas through the rotatable shaft and delivering the additional purge gas into the central volume of the transfer region. The purge gas may be delivered into the transfer region of the substrate processing system through a plurality of purge channels comprising a gas volume less than or approximately 80% of the gas volume of one or more processing precursors delivered through a plurality of cap stacks of the substrate processing system. Additional purified gas can be conveyed through a rotatable shaft and from a central bore defined by a central hub to a transfer area, less than or approximately 20% of the total amount of additional purified gas conveyed through the rotatable shaft and delivered into the central volume of the transfer area.

[0013] This technology can offer numerous advantages over conventional systems and techniques. For example, the purification channel can limit or prevent dead zones from forming in the transfer area or other areas of the system. Furthermore, the flow of one or more purification gases can restrict the entry of treatment precursors into the transfer area within the system. These and other embodiments are described in more detail below in conjunction with the accompanying drawings (along with their many advantages and features). Attached Figure Description

[0014] A further understanding of the nature and advantages of the disclosed technology can be achieved by referring to the remainder of the specification and the accompanying drawings.

[0015] Figure 1A A schematic top view of an exemplary processing tool according to some embodiments of the present technology is shown.

[0016] Figure 1B A schematic partial cross-sectional view of an exemplary processing system according to some embodiments of the present technology is shown.

[0017] Figure 2 A schematic isometric view of the transfer portion of an exemplary substrate processing system according to some embodiments of the present technology is shown.

[0018] Figure 3A schematic isometric view of an exemplary exhaust system of an exemplary substrate processing system according to some embodiments of the present technology is shown.

[0019] Figure 4 A schematic partial cross-sectional view of a transfer portion of an exemplary substrate processing system according to some embodiments of the present technology is shown.

[0020] Figure 5A A schematic partial cross-sectional view of a transfer portion of an exemplary substrate processing system according to some embodiments of the present technology is shown.

[0021] Figure 5B Exemplary transfer devices according to some embodiments of the present technology are shown along Figure 5A A schematic partial cross-sectional view of line AA.

[0022] Figure 6 Selected operations in a semiconductor processing method according to some embodiments of the present technology are shown.

[0023] Several figures are included as illustrations. It should be understood that these figures are for illustrative purposes and should not be considered to be to scale unless specifically stated otherwise. Furthermore, as illustrations, these figures are provided to aid understanding and may not include all aspects or information compared to a realistic representation, and may include exaggerated material for illustrative purposes.

[0024] In the accompanying drawings, similar parts and / or features may have the same reference numerals. Furthermore, various parts of the same type may be distinguished by adding letters after the reference numerals to differentiate them. If only a first reference numeral is used in the specification, the description applies to any one of the similar parts having the same first reference numeral, regardless of the lettering. Detailed Implementation

[0025] Substrate processing can include time-intensive operations for adding, removing, or otherwise modifying material on a wafer or semiconductor substrate. Efficient substrate movement reduces queuing time and increases substrate throughput. To increase the number of substrates processed within a clustering tool, additional chambers can be incorporated into the host unit. While the number of transfer robots and processing chambers can be continuously increased by lengthening the tool, this can become space-inefficient as the footprint of the clustering tool expands. Therefore, this technique can include clustering tools with an increased number of processing chambers within a defined footprint. To accommodate a limited footprint with respect to the transfer robot, this technique can increase the number of processing chambers laterally outward from the robot. For example, some conventional clustering tools may include one or two processing chambers positioned around a centrally located portion of the transfer robot to maximize the number of chambers radially around the robot. This technique can extend the concept by incorporating additional laterally outward chambers as another column or another set of chambers. For example, this technique can be applied to clustering tools comprising three, four, five, six, or more processing chambers that can move in and out at each of one or more robot entry / exit positions.

[0026] However, with the addition of additional process locations, it may no longer be feasible to move the substrate in and out of these locations from a central robot without additional transfer capability at each location. Some conventional techniques may include a wafer carrier, on which the substrate is held during the transition. However, wafer carriers can cause thermal inhomogeneities and particulate contamination on the substrate. This technique overcomes these problems by incorporating a transfer section vertically aligned with the processing chamber area and a rotary conveyor or transfer device that can operate in conjunction with a central robot to move the substrate in and out of additional wafer locations. A substrate support can then be vertically translated between the transfer area and the processing area to transport the substrate for processing.

[0027] When the transfer zone is fluidly accessible to the processing zone, process gases or plasma-enhancing materials can permeate through the processing zone and enter the transfer zone. These active precursors (which may include deposition precursors, clean gases, or other materials) can cause deposition or other process interactions within the transfer zone and may result in deposits or damage to components in the transfer zone. This technique overcomes these problems by delivering one or more purge gases to the transfer zone to help limit or prevent the entry of process precursors into the transfer zone. When multiple processing chambers are performing the same process as other processing chambers and purge gases flow to each zone, material flow may become balanced, potentially creating flow dead zones in the center or other areas of the transfer zone or other areas of the processing system. This technique can also limit the formation of these dead zones by incorporating additional purge channels leading to one or more zones to the transfer zone to provide flow through multiple zones of the system.

[0028] While the remaining disclosure will routinely identify specific structures (such as four-position transfer regions) to which this structure and method can be applied, it will be readily understood that the substrate support assembly or component can be equally used in any number of other systems or chambers. Therefore, the technology should not be considered limited to use alone in any particular chamber. Furthermore, although exemplary tool systems will be described to provide a basis for this technology, it should be understood that this technology can be combined with any number of semiconductor processing chambers and tools that may benefit from all or some of the operations and systems described.

[0029] Figure 1A A top plan view of one embodiment of a substrate processing tool or system 100 with deposition, etching, baking, and curing chambers according to some embodiments of the present technology is shown. In the figure, a set of front-opening standard chambers 102 supply substrates of various sizes, which are received by robotic arms 104a and 104b within a factory interface 103 and placed in a loading lock or low-pressure holding region 106 before being transported to one of the substrate processing regions 108, which are located in a chamber system or quad sections 109a-c, each of which can be a substrate processing system having a transfer region fluidly coupled to multiple processing regions 108. Although a quad system is shown, it should be understood that the present technology also includes platforms combining independent chambers, dual chambers, and other multi-chamber systems. A second robotic arm 110, housed in transfer chamber 112, can be used to transfer a substrate wafer from holding region 106 to four groups of sections 109 and back, and the second robotic arm 110 can be housed in the transfer chamber, each of the four groups of sections or a processing system can be connected to the transfer chamber. Each substrate processing region 108 can be configured to perform several substrate processing operations, including any number of deposition processes, including cyclic layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as etching, pre-cleaning, annealing, plasma processing, degassing, orientation, and other substrate processes.

[0030] Each group of four portions 109 may include a transfer region that can receive and transport a substrate from and to a second robotic arm 110. The transfer regions of the chamber system may be aligned with transfer chambers having the second robotic arm 110. In some embodiments, the robot may move laterally into and out of the transfer regions. In subsequent operations, components of the transfer portions may vertically translate the substrate into the overlying processing region 108. Similarly, the transfer regions may also be operable to rotate the substrate between positions within each transfer region. The substrate processing region 108 may include any number of system components for depositing, annealing, curing, and / or etching film of material on a substrate or wafer. In one configuration, two sets of processing regions (such as the processing regions in the group of four portions 109a and 109b) may be used to deposit material on the substrate, while a third set of processing chambers (such as the processing chambers or regions in the group of four portions 109c) may be used to cure, anneal, or process the deposited film. In another configuration, all three sets of chambers (such as all twelve chambers shown) may be configured to deposit and / or cure films on the substrate.

[0031] As shown, the second robotic arm 110 may include two arms for simultaneously transporting and / or retrieving multiple substrates. For example, each of the four-unit groups 109 may include two inlets 107 along the surface of the housing of the transfer region, the two inlets 107 being laterally aligned with the second robotic arm. The inlets and outlets may be defined along a surface adjacent to the transfer chamber 112. In some embodiments, as shown, the first inlet and outlet may be aligned with a first substrate support among the multiple substrate supports of the four-unit group. Furthermore, the second inlet and outlet may be aligned with a second substrate support among the multiple substrate supports of the four-unit group. In some embodiments, the first substrate support may be adjacent to the second substrate support, and the two substrate supports may define a first column of substrate supports. As shown in the configuration, the second column of substrate supports may be positioned behind the first column of substrate supports, laterally outward from the transfer chamber 112. The two arms of the second robotic arm 110 may be spaced apart to allow both arms to simultaneously enter the four-unit group or chamber system to transport or retrieve one or two substrates to or from the substrate supports within the transfer region.

[0032] Any one or more of the described transfer regions can be combined with additional chambers separate from the manufacturing systems shown in different embodiments. It should be understood that the processing system 100 takes into account additional configurations for chambers used for material film deposition, etching, annealing, and curing. Furthermore, any number of other processing systems can be used in conjunction with this technology, which can be combined with transfer systems for performing any of the specific operations, such as substrate movement. In some embodiments, a processing system can be provided that allows access to multiple processing chamber regions while maintaining a vacuum environment in the various portions (such as the aforementioned holding and transfer regions), allowing operations to be performed in multiple chambers while maintaining a specific vacuum environment between discrete processes.

[0033] Figure 1B A schematic cross-sectional front view of one embodiment of an exemplary processing tool (such as a cavity system) according to some embodiments of the present technology is shown. Figure 1B A cross-sectional view through any two adjacent processing regions 108 in any group of four sections 109 can be shown. A front view can show the configuration or fluid coupling of one or more processing regions 108 with transfer regions 120. For example, continuous transfer regions 120 may be defined by a transfer region housing 125. The housing may define an open internal volume in which multiple substrate supports 130 may be disposed. For example, as... Figure 1A As shown, the exemplary processing system may include four or more substrate supports 130 distributed within a housing surrounding a transfer region. The substrate supports may be a base as shown, but various other configurations may also be used. In some embodiments, the base may be vertically translatable between the transfer region 120 and a processing region covering the transfer region. The substrate supports may be vertically translatable along a path between a first and a second position within the chamber system along a central axis of the substrate support. Thus, in some embodiments, each substrate support 130 may be axially aligned with an overlying processing region 108 defined by one or more chamber components.

[0034] An open transfer area allows transfer devices 135 (such as a rotary conveyor) to engage and move substrates between various substrate supports (e.g., rotatably). Transfer device 135 can rotate about a central axis. This allows substrates to be positioned for processing within any processing area 108 within the processing system. Transfer device 135 may include one or more end effectors that can engage substrates from above, below, or engage the outer edges of substrates to move around substrate supports. The transfer device can receive substrates from a transfer chamber robot, such as the previously described robot 110. The transfer device can then rotate the substrates to alternate substrate supports to facilitate the transport of additional substrates.

[0035] Once positioned and awaiting processing, the transfer device can position the terminal actuator or arm between the substrate supports, allowing the substrate supports to be raised and passed through the transfer device 135 and the substrate to be transported into the processing area 108, which can be vertically offset from the transfer area. For example, and as shown, substrate support 130a can transport the substrate into processing area 108a, while substrate support 130b can transport the substrate into processing area 108b. This can be performed with two other substrate supports and processing areas, and in embodiments including additional processing areas, with additional substrate supports and processing areas. In this configuration, when operably engaged for processing a substrate (such as in a second position), the substrate supports can define the processing area 108 at least partially from below, and the processing area can be axially aligned with the associated substrate support. The processing area can be defined from above by panel 140 and other cover stack components. In some embodiments, each processing area may have a separate cover stack component, but in some embodiments, the components may accommodate multiple processing areas 108. Based on this configuration, in some embodiments, each processing region 108 may be fluidly coupled to a transfer region while being fluidly isolated from above from the chamber system or each of the four groups of sections.

[0036] In some embodiments, panel 140 may operate as an electrode of a system for generating localized plasma within processing region 108. As shown, each processing region may utilize or incorporate a separate panel. For example, panel 140a may be included to define processing region 108a from above, and panel 140b may be included to define processing region 108b from above. In some embodiments, a substrate support may operate as a mating electrode for generating capacitively coupled plasma between the panel and the substrate support. Depending on the volumetric geometry, pumping liner 145 may define processing region 108 at least partially radially or laterally. Similarly, a separate pumping liner may be used for each processing region. For example, pumping liner 145a may define processing region 108a at least partially radially, and pumping liner 145b may define processing region 108b at least partially radially. In embodiments, baffle 150 may be positioned between cover 155 and panel 140, and may again include a separate baffle to facilitate fluid distribution within each processing region. For example, a baffle plate 150a may be included for distribution toward the processing area 108a, and a baffle plate 150b may be included for distribution toward the processing area 108b.

[0037] The cover 155 may be a separate component for each processing region, or it may include one or more common aspects. In some embodiments, such as those shown, the cover 155 may be a single component defining a plurality of orifices 160 for delivering fluid to individual processing regions. For example, the cover 155 may define a first orifice 160a for delivering fluid to processing region 108a, and the cover 155 may define a second orifice 160b for delivering fluid to processing region 108b. When additional orifices are included, additional orifices may be defined for additional processing regions within each portion. In some embodiments, each of four group portions 109—or a multi-processing region portion accommodating more or fewer than four substrates—may include one or more remote plasma units 165 for delivering plasma effluent into the processing chamber. In some embodiments, a separate plasma unit may be incorporated into each chamber processing region, although fewer remote plasma units may be used in some embodiments. For example, as shown, a single remote plasma unit 165 may be used for multiple chambers, such as two, three, four, or more chambers of all chambers in a particular group of four portions. In embodiments of this technology, conduits can extend from the remote plasma unit 165 to each orifice 160 for conveying plasma effluent for processing or cleaning.

[0038] In some embodiments, the purification channel 170 may extend through the transfer area housing near or adjacent to each substrate support 130. For example, multiple purification channels may extend through the transfer area housing to provide fluid inflow and outflow for fluid-coupled purification gas to be delivered into the transfer area. The number of purification channels may be the same as or different from the number of substrate supports within the processing system, including more or fewer. For example, the purification channel 170 may extend through the transfer area housing beneath each substrate support. For the two substrate supports 130 shown, a first purification channel 170a may extend through the housing near substrate support 130a, and a second purification channel 170b may extend through the housing near substrate support 130b. It should be understood that any additional substrate support may similarly have plumbed purification channels extending through the transfer area housing to provide purification gas into the transfer area.

[0039] As the purifying gas is conveyed through one or more of the purifying channels, it can similarly exit through the pumping liner 145, which provides all exit paths from the processing system. Therefore, in some embodiments, both the processing precursor and the purifying gas can exit through the pumping liner. The purifying gas can flow upwards to the associated pumping liner; for example, purifying gas flowing through purifying channel 170b can exit from the processing system through pumping liner 145b. As will be further explained below, the purifying gas flow can be conveyed to limit the intrusion of processing precursors into transfer areas of the system. Because the flow distribution of the purifying gas can extend upwards toward the associated pumping liner, dead zones in the purifying gas flow can form in certain areas of the transfer area, such as, for example, those formed centrally. As will be described below, in order to limit the accumulation of processing precursors in these areas, additional purifying gas can flow through and around the transfer device 135 in some embodiments of the art.

[0040] As indicated, processing system 100, or more specifically, a group of four components or chamber systems combined with processing system 100 or other processing systems, may include a transfer portion located below the illustrated processing chamber region. Figure 2 A schematic isometric view of the transfer portion of an exemplary chamber system 200 according to some embodiments of the present technology is shown. Figure 2 Variations of other aspects or features of the aforementioned transfer region 120 may be shown, and may include any of the described components or features. The illustrated system may include a transfer region housing 205 defining a transfer region therein that may include several components. The transfer region may additionally be defined from above, at least partially, by a processing chamber or a processing region fluidly coupled to the transfer region, such as... Figure 1A The processing chamber region 108 is shown in a group of four sections 109. The sidewalls of the transfer region housing may define one or more access points 207 through which the substrate can be transported and retrieved, such as via the second robotic arm 110 discussed above. In some embodiments, the access point 207 may be a slit valve or other sealable access point, including a door or other sealing mechanism to provide a sealed environment within the transfer region housing 205. Although two such access points 207 are shown, it should be understood that in some embodiments only a single access point 207 may be included, as well as access points on multiple sides of the transfer region housing. It should also be understood that the dimensions of the illustrated transfer portions may be designed to accommodate any substrate size, including substrates of 200 mm, 300 mm, 450 mm, or larger or smaller, including substrates characterized by any number of geometries or shapes.

[0041] Within the transfer area housing 205 may be a plurality of substrate supports 210 positioned around the volume of the transfer area. Although four substrate supports are shown, it should be understood that embodiments of the present technology similarly cover any number of substrate supports. For example, according to embodiments of the present technology, more than or approximately three, four, five, six, eight or more substrate supports 210 may be accommodated in the transfer area. A second robotic arm 110 may deliver substrates to any one or two of substrate supports 210a or 210b via inlet / outlet 207. Similarly, the second robotic arm 110 may retrieve substrates from these locations. A lifting rod 212 may protrude from the substrate support 210 and may allow the robot to move in and out under the substrate. In some embodiments, the lifting rod may be fixed to the substrate support, or fixed in a location where the substrate support may be recessed below, or the lifting rod may be additionally raised or lowered via the substrate support. The substrate support 210 may be vertically translatable and, in some embodiments, may extend into a processing chamber region of the substrate processing system, such as processing chamber region 108, which is located above the transfer area housing 205.

[0042] The transfer area housing 205 can provide an inlet / outlet 215 for an alignment system, which may include an aligner that can extend through a hole in the transfer area housing as shown and can operate in conjunction with a laser, camera, or other protruding monitoring element, or be transmitted through an adjacent hole, thereby determining whether the substrate being translated is correctly aligned. The transfer area housing 205 may also include a transfer device 220 that can operate in various ways to position and move substrates between various substrate supports. In one example, the transfer device 220 can move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, allowing additional substrates to be transported into the transfer chamber. Additional transfer operations may include rotating the substrates between substrate supports for additional processing in the overlay processing area.

[0043] The transfer device 220 may include a central hub 225, which may include one or more shafts extending into the transfer chamber. A terminal actuator 235 may be coupled to the shaft. The terminal actuator 235 may include a plurality of arms 237 extending radially or laterally outward from the central hub. Although a central body from which the arms extend is shown, in various embodiments, the terminal actuator may additionally include individual arms, each individually coupled to a shaft or the central hub. Any number of arms may be included in embodiments of the art. In some embodiments, the number of arms 237 may be similar to or equal to the number of substrate supports 210 included in the chamber. Thus, as shown, for four substrate supports, the transfer device 220 may include four arms extending from the terminal actuator. The arms may be characterized by any number of shapes and profiles, such as straight or arcuate profiles, and include any number of distal profiles, including hooks, loops, forks, or other designs for supporting substrates and / or providing access for substrates (e.g., for alignment or engagement).

[0044] As described above, in some embodiments, a central purification may be included within the processing area. For example, when each of the four substrate supports 210 includes a purification channel that is an access rod and extends through the transfer chamber housing, the flow may not extend across the central hub 225. Therefore, processing precursors flowing to this area may accumulate instead of being purified from the transfer area. To limit or prevent this effect, in some embodiments, the technique can deliver additional purification via and / or around the transfer device. As will be described below, the flow may extend below the terminal actuator, and the flow may also extend through a central aperture 240, which is defined through the central hub. The aperture can provide fluid inflow and outflow from a shaft (such as a rotatable shaft) of the transfer device to the transfer area, to which the terminal actuator may be coupled. The purification source may be fluidly coupled to the shaft to provide a purification path through the central aperture.

[0045] The terminal actuator 235 or a component or portion thereof may be used to contact the substrate during transfer or movement. These components and the terminal actuator may be made of or comprise several materials, including conductive and / or insulating materials. In some embodiments, the materials may be coated or plated to withstand contact with precursors or other chemicals that may enter the transfer chamber from the overlying processing chamber.

[0046] Furthermore, materials can be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, a substrate support can be used to heat a substrate disposed on the support. The substrate support can be configured to increase the surface or substrate temperature to temperatures greater than or about 100°C, greater than or about 200°C, greater than or about 300°C, greater than or about 400°C, greater than or about 500°C, greater than or about 600°C, greater than or about 700°C, greater than or about 800°C, or higher. Any of these temperatures can be maintained during operation, and therefore components of the transfer device 220 can be exposed to any of these specified or covered temperatures. Thus, in some embodiments, any of the materials can be selected to accommodate these temperature ranges, and materials such as ceramics and metals, characterized by relatively low coefficients of thermal expansion or other advantageous properties, can be included.

[0047] The component coupling is also suitable for operation in high-temperature and / or corrosive environments. For example, where both the end actuator and the end portion are ceramic, the coupling may include a press fit, a snap fit, or other fits that may not include additional materials such as bolts, which can expand and contract with temperature and may cause the ceramic to crack. In some embodiments, the end portion may be continuous with the end actuator and may be integrally formed with the end actuator. Any number of other materials that can facilitate operation or provide resistance during operation may be used, and such other materials are similarly covered by this technology.

[0048] Figure 3 A schematic isometric view of an exemplary venting system 300 of an exemplary substrate processing system according to some embodiments of the present technology is shown. This figure may illustrate aspects of the aforementioned processing system and components, and may also illustrate additional aspects of the system. This figure may illustrate a system with multiple components removed to facilitate the illustration of the venting system of the processing system. It should be understood that the venting system 300 may include any aspect of any part of the processing system described or shown elsewhere, and may illustrate aspects of the venting system in conjunction with any system described elsewhere. For example, the venting system 300 may illustrate a system with some cover stack components removed from the previously described cover stack components. It should be understood that these components may still be incorporated, such as including a pumping liner at each processing location.

[0049] As previously described, a processing system according to some embodiments of the present technology may include a substrate support 305 that can be vertically translated from a transfer region 310, which may include any aspect of the aforementioned chamber portion 200. The substrate supports 305 may each extend into an associated processing region, where they may define the processing region at least partially from below, with panels or other cover stacks defining the processing region at least partially from above. Pumping liners may define the processing region at least partially radially and may provide venting paths as shown above, which can deliver material to an venting system, as illustrated in the figures. Each pumping liner may provide inlet and outlet to an vent 315, which may lead to a foreline. The foreline may fluidly couple each of the vents 315 to a pumping system configured to extract material from the system.

[0050] As shown, exhaust port 315 may be the only exhaust path from the processing system, including from transfer area 310. Furthermore, as shown, substrate support 305 may not fully accommodate or seal the cap stack components, such as a lower cover plate 320 that can support individual cap stack components, and may at least partially define the processing area around the substrate support. The lower cover plate 320 may also define the transfer area from above. Therefore, each processing area can then be fluidly coupled to the transfer area around the substrate support. As purge gas flows out from a purge channel near the substrate support, the gas can thus be drawn into the pumping liner surrounding the substrate support and through the lower cover plate before flowing through the pumping liner and into the exhaust system. Therefore, the pumping liner can define an exhaust flow path from each processing area for both processing precursors that can be delivered from above the pumping liner and purge gas that can be delivered from the transfer area and below the pumping liner.

[0051] When similar operations are being performed in each processing area, this may include delivering a similar amount of purge gas from the processing area around each substrate support. The central region, as shown, may not see much flow because the purge gas generally flows upwards to the associated processing area and may not flow across or between the substrate supports. This can create a dead zone in the central region of the transfer area, allowing processing precursors to accumulate between the substrate supports as they move in and out of the transfer area, and this dead zone may be above the transfer device. If material accumulation is allowed, the deposits may interfere with the operation of the transfer device, or the purge gas may damage the terminal actuators.

[0052] In order to limit the accumulation of processed materials or precursors in the transfer area, in some embodiments of this technology, an additional decontamination stream may be delivered to the processing area. Figure 4A schematic partial cross-sectional view of a transfer portion 400 of an exemplary substrate processing system according to some embodiments of the present technology is shown, and a cross-section through a transfer device 405 may also be shown. The transfer device may be positioned within a transfer region, as discussed above. The transfer region may be defined from above by a lower cover plate 410 and from below by a transfer region housing 412. When the substrate support 415 is in the raised position, processing precursors may accumulate in a central region of the transfer region, which may be above the transfer device. The present technology may create one or more additional clean flow paths to limit accumulation and improve cleanliness from the transfer region.

[0053] As shown, the transfer device 405 may include a rotatable shaft 420 coupled to a terminal actuator 425. The terminal actuator may include a central hub 427 coupled to the rotatable shaft. The terminal actuator may also include a plurality of arms 430 extending from the central hub. As described above, the central hub 427 may define an orifice through which purified gas can be delivered. The purified gas may flow upward through the shaft 420 to be delivered to a transfer region above the transfer device, which may be centrally located between the substrate supports and adjacent to a flow dead zone within the transfer region. A purification source 435 may be fluidly coupled to the rotatable shaft for delivering purified gas through the central hub orifice. Furthermore, the purification source may be coupled to a baffle or enter / exit through a transfer region housing into a central volume formed between the transfer device and the transfer region housing 412. As shown, the purified gas can be delivered upward through the rotatable shaft of the transfer device and into a region directly above the transfer device, such as between the central hub and the lower cover plate 410.

[0054] Furthermore, the purge gas can be delivered to a central volume defined below the transfer device, such as between the central hub and the transfer area housing, as shown. The purge gas delivered below the transfer device can then flow radially outward to interact with the purge flow extending near each substrate support, which can purge the central region of the transfer area. The terminal actuator 425 can facilitate the uniform outward guidance of the flow to limit any dissimilar effects on the flow distribution extending toward each pumping liner, which can facilitate maintaining similar treatment and effects in each processing area and limit any disturbances that could cause flow variations toward one or more processing areas. To further limit the circulation or jetting of the flow from the central orifice, in some embodiments the flow rate of the purge gas through the central orifice can be limited. For example, the flow rate of the purge gas flowing through the central orifice during any given unit time may be less than or approximately 40% of the flow rate flowing through the central volume. Furthermore, the flow rate through the central orifice can be less than or approximately 35% of the flow rate into the central volume, and can be less than or approximately 30%, less than or approximately 25%, less than or approximately 20%, less than or approximately 15%, less than or approximately 10%, less than or approximately 5%, or even less, which can further promote the equivalent flow to each processing area of ​​the system.

[0055] Figure 5A A schematic partial cross-sectional view of a transfer portion 500 of an exemplary substrate processing system according to some embodiments of the present technology is shown, and additional embodiments for allowing purified gas to flow into a central region between the transfer device and the transfer area housing may also be shown. As shown, the transfer device 505 may include a rotatable shaft 510 coupled to a terminal actuator 515. The terminal actuator 515 may include a central hub 520, from which one or more arms 525 extend. An orifice 522 may be defined within the central hub and provide fluid coupling through a channel through the shaft 510, allowing purified gas delivered from a purification source 527 to flow to a region above the transfer device.

[0056] Furthermore, one or more orifices 535 may be defined within the shaft 510 and may also be fluidly coupled to a purification source 527 for delivering purified gas to a central volume formed between the terminal actuator 515 and the transfer area housing 530. In some embodiments, the orifice 535 may include a baffle or throttle as shown, which may increase the flow rate from the shaft to the central volume and reduce the flow rate delivered through the central orifice 522. This may limit the ejection of purified flow from the transfer device, which may make it difficult to ensure that the flow is evenly distributed to each processing area for discharge from the system.

[0057] Figure 5B An exemplary transfer device shaft 510 according to some embodiments of the present technology is shown along... Figure 5A A schematic cross-sectional partial view of line AA. As shown, one or more orifices 535 may be defined as passing through a shaft 510 of the transfer device. Although four orifices are shown, it should be understood that any number of orifices may be formed, including more than or about one, more than or about two, more than or about three, more than or about four, more than or about five, more than or about six, or more, which can improve the flow uniformity in the central volume defined below the transfer device. In addition, one or more baffles or throttles may extend through the shaft into the central channel, and one or more baffles or throttles may direct the flow toward the orifices. This can be used to reduce the flow rate through the central orifice that may extend through the central hub by forming a reduced path 540 extending through the orifice (which leads to the central volume of the transfer area between the central hub of the transfer device and the housing of the transfer area). The throttle can reduce the flow rate of the purified gas delivered through the central orifice relative to the orifice 535 to any of the above percentages or ranges. By delivering the purified gas through one or each of the central orifice of the transfer device and the central volume of the transfer area, dead zones of flow can be restricted or prevented, which can ensure the complete removal of precursors.

[0058] Figure 6Selected operations in a semiconductor processing method 600 according to some embodiments of the present technology are illustrated. The method can be performed in various processing systems, including the processing system 100 described above. The method may include performing a decontamination operation in a transfer region of the processing system during semiconductor processing or chamber cleaning, which can limit material buildup in the transfer region, as previously described. Method 600 may include several optional operations, which may or may not be specifically associated with some embodiments of the method according to the present technology. For example, many operations are described to provide a wider range of structure formation and operations, but are not critical to the technology, or may be performed by easily understood alternative methods. The method can be performed in any processing chamber or system including any of the components, configurations, or aspects described above, including any aspect of the transfer device or exhaust system described above. According to embodiments of the present technology, the method can also be performed in any other processing chamber that may benefit from decontamination.

[0059] Method 600 may include additional operations prior to the commencement of the listed operations. For example, additional processing operations may include conveying the substrate to a transfer area, rotating the substrate between substrate supports, and performing any number of substrate processes within the processing system or any other processing chamber. Substrate supports (such as those within the transfer area) on which the substrate may be placed may be translated into a processing area, which may cover the transfer area as previously described. In operation 605, one or more processing precursors may be conveyed to the processing areas, which may include conveying to multiple processing areas, such as via separate cap stacks as previously described. As described above, each processing area may be at least partially defined by an associated cap stack, substrate supports, and a pump liner, wherein processing and decontamination materials may be discharged from the system via the pump liner.

[0060] At operation 610, one or more purge gases can be delivered to a transfer region extending below each processing region. The purge gases can flow through one or more purge channels, such as purge channel 170, which can be positioned close to each substrate support and can extend through the transfer region housing. In some embodiments, purge gases can be additionally provided via a rotatable shaft, which can deliver additional purge gases to the transfer region, such as through a central bore defined by the central hub of the transfer device. Furthermore, purge gases can pass through a baffle surrounding the shaft of the transfer device at the bottom of the transfer region, or through a bore in the shaft of the transfer device, as previously described.

[0061] At operation 615, the processing system can discharge one or more processing precursors, processing byproducts, and purge gases transported through the transfer area. By discharging the purge gases through a pumping liner and exhaust system as described above, the purge gases can provide a barrier to limit or prevent the accumulation of processing precursors in the transfer area.

[0062] The purge gas may comprise any material, which may be inert or non-reactive with one or more components of the system, and may include nitrogen, argon, helium, hydrogen, oxygen, or any other process precursor or carrier gas that limits the impact on the process being performed. Because purge gases can be delivered to provide a barrier or curtain to limit the flow of process precursors from the processing area, the flow can be less than the flow of process precursors. For example, in some embodiments, the flow rate of purge gas delivered from each of the purge channels may be less than or approximately 90% of the flow rate of the process precursors transported through the associated cover stack. Additionally, the flow rate of the delivered purge gas may be less than or approximately 85% of the flow rate of the process precursors, and may be less than or approximately 80%, less than or approximately 75%, less than or approximately 70%, less than or approximately 65%, less than or approximately 60%, less than or approximately 55%, less than or approximately 50%, or less.

[0063] As explained above, purge gases can be provided above and below the transfer device to prevent the formation of dead zones where processed material may accumulate. To limit the impact of balanced flow rates to each processing area, in some embodiments, the flow rate of the centrally delivered purge gas may be less than the flow rate delivered to any individual purge channel. For example, in some embodiments, the flow rate of the centrally delivered purge gas through and / or around the transfer device may be less than or approximately 80% of the flow rate delivered from any individual purge channel near the individual substrate support. Furthermore, the centrally delivered purge gas may be less than or approximately 75% of the flow rate delivered from any individual purge channel, and may be less than or approximately 70%, less than or approximately 65%, less than or approximately 60%, less than or approximately 55%, less than or approximately 50%, less than or approximately 45%, less than or approximately 40%, less than or approximately 35%, less than or approximately 30%, less than or approximately 25%, less than or approximately 20%, less than or approximately 15%, less than or approximately 10%, or even less. Therefore, when multiple purification channels are provided with multiple substrate supports, the flow rate of the centrally delivered purification gas may be less than or approximately 40% of the total amount of additional purification gas delivered through the purification channels or the total amount of the processing precursor delivered through the cover stack, and may be less than or approximately 35% of the total amount, less than or approximately 30% of the total amount, less than or approximately 25% of the total amount, less than or approximately 20% of the total amount, less than or approximately 15% of the total amount, less than or approximately 10% of the total amount, less than or approximately 5% of the total amount, less than or approximately 1% of the total amount, or less.

[0064] To further limit the ejection of purified gas from the central orifice through the transfer device, in some embodiments, the flow rate of purified gas delivered through the central orifice may be less than or approximately 50% of the total amount of purified gas delivered through the rotatable shaft and / or around the transfer device, and may be less than or approximately 45%, less than or approximately 40% of the total amount, less than or approximately 35% of the total amount, less than or approximately 30% of the total amount, less than or approximately 25% of the total amount, less than or approximately 20% of the total amount, less than or approximately 15% of the total amount, less than or approximately 10% of the total amount, less than or approximately 5% of the total amount, less than or approximately 1% of the total amount, or less.

[0065] The flow rate of the purge gas delivered around and / or through the transfer device can be based at least in part on the volume of the transfer area, the volume of the precursor delivered through the cover stack, and any other characteristics of the processing and chamber configuration. In some embodiments, the total amount of purge gas delivered through and / or around the axis of the transfer device can be less than or about 5 slm, and can be less than or about 4 slm, less than or about 3 slm, less than or about 2 slm, less than or about 1 slm, less than or about 0.5 slm, less than or about 0.3 slm, or less. In some embodiments, the delivery can be at a rate of less than or about 3 slm, which can limit the thermal effect on the transfer device. Because the transfer device can provide a flow path for the purge gas, the flow rate of the purge gas can be controlled in some embodiments to limit cooling along any aspect of the arm or transfer device. By providing purge gas through the transfer area of ​​the processing system according to some embodiments of the present technology, the inflow and / or accumulation of processing precursors in the transfer area can be limited or prevented.

[0066] In the foregoing description, numerous details have been set forth for illustrative purposes to provide an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0067] Several embodiments have been disclosed, and those skilled in the art will recognize that various modifications, alternative constructions, and equivalents can be used without departing from the spirit of the embodiments. Furthermore, to avoid unnecessarily obscuring the art, many well-known processes and elements have not been described. Therefore, the above description should not be considered as limiting the scope of the art. Additionally, methods or processes may be described as sequential or stepwise, but it should be understood that these operations may be performed simultaneously or in a different order than listed.

[0068] When a range of values ​​is provided, it should be understood that, unless the context explicitly specifies otherwise, each intermediate value (the smallest fraction accurate to the lower limit unit) between the upper and lower limits of the range is also specifically disclosed. Any narrower range between any specified value or intermediate value not specified within the specified range and any other specified or intermediate value within the specified range is included. The upper and lower limits of these smaller ranges may be independently included in or excluded from the range, and each range (excluding one, both, or both limits) is also covered within the technique and subject to any explicitly excluded limits within the specified range. Where the range includes one or two limits, ranges excluding one or both of these limits are also included.

[0069] As used herein and in the appended claims, the singular forms “a”, “an”, and “the” include the plural forms unless the context clearly specifies otherwise. Thus, for example, reference to “shaft” includes a plurality of such shafts, and reference to “hole” includes reference to one or more connectors and their equivalents known to those skilled in the art, and so on.

[0070] Furthermore, when the terms “comprise(s)”, “comprising”, “contain(s)”, “include(s)”, and “including” are used in this specification and the appended claims, they are intended to specify the presence of the said feature, integer, component, or operation, but do not exclude the presence or addition of one or more other features, integers, components, operations, actions, or groups.

Claims

1. A substrate processing system, comprising: Multiple processing areas; A transfer region housing that defines a transfer region fluidly coupled to the plurality of processing zones; A plurality of substrate supports, each of the plurality of substrate supports being vertically translatable between the transfer region and an associated processing region among the plurality of processing regions; as well as Transfer device, the transfer device comprising: A rotatable shaft extending through the housing of the transfer region, and A terminal actuator coupled to the rotatable shaft, wherein the terminal actuator includes a central hub defining a central aperture fluidly coupled to a purification source, wherein the central aperture extends through the top surface of the central hub, and wherein the terminal actuator further includes a plurality of arms having a number of arms equal to the number of substrate supports of the plurality of substrate supports. The rotatable shaft defines one or more orifices that are fluidly coupled to a purification source and are configured to deliver purified gas to a central volume formed between the terminal actuator and the transfer area housing.

2. The substrate processing system of claim 1, further comprising: Multiple purification channels, the number of purification channels being equal to the number of substrate supports of the multiple substrate supports.

3. The substrate processing system of claim 2, wherein each of the plurality of purification channels extends through the transfer region housing near a separate substrate support among the plurality of substrate supports.

4. The substrate processing system of claim 2, wherein each of the plurality of processing regions is defined at least in part from above by a separate cover stack, and wherein each cover stack includes a pumping liner fluidly coupled to an exhaust port of the substrate processing system.

5. The substrate processing system of claim 4, wherein each pumping liner at least partially defines an exhaust flow path from each processing area for purified gas delivered through the plurality of purification channels.

6. The substrate processing system of claim 1, wherein the one or more holes are configured to deliver purified gas to a central volume of the transfer region defined at least partially by the central hub of the terminal actuator.

7. The substrate processing system of claim 6, wherein the purification source is configured to deliver more than 75% of the purified gas delivered through the one or more orifices relative to the central orifice defined by the central hub.

8. The substrate processing system of claim 1, wherein the plurality of substrate supports includes at least three substrate supports distributed around the transfer region, and wherein the transfer device is located centrally among the plurality of substrate supports.

9. A substrate processing system, comprising: Multiple processing areas; A transfer region housing that defines a transfer region fluidly coupled to a plurality of processing zones; Multiple substrate supports, each of which is vertically translatable between the transfer region and an associated processing region among the multiple processing regions; Multiple purification channels are defined to pass through the transfer area housing, and the number of purification channels is equal to the number of substrate supports of the multiple substrate supports. as well as Transfer device, the transfer device comprising: A rotatable shaft extending through the housing of the transfer region, and A terminal actuator coupled to the rotatable shaft, wherein the terminal actuator includes a central hub defining a central aperture fluidly coupled to a purification source, wherein the central aperture extends through the top surface of the central hub, and wherein the terminal actuator further includes a plurality of arms having a number of arms equal to the number of substrate supports of the plurality of substrate supports. The rotatable shaft defines one or more orifices that are fluidly coupled to a purification source and are configured to deliver purified gas to a central volume formed between the terminal actuator and the transfer area housing.

10. The substrate processing system of claim 9, wherein each of the plurality of processing regions is defined at least partially from above by a separate cover stack, and wherein each cover stack includes a pumping liner fluidly coupled to an exhaust port of the substrate processing system.

11. The substrate processing system of claim 10, wherein each pumping liner at least partially defines an exhaust flow path from each processing area for purified gas delivered through the plurality of purification channels.

12. The substrate processing system of claim 9, wherein the rotatable shaft defines one or more orifices fluidly coupled to a purification source, the one or more orifices being configured to deliver purification gas to a central volume of the transfer region defined at least partially by the central hub of the terminal actuator.

13. A semiconductor processing method, comprising: One or more processing precursors are delivered via multiple cover stacks of a substrate processing system, each of the multiple cover stacks fluidly entering and exiting a processing region within a plurality of processing regions, wherein each processing region within the plurality of processing regions is at least partially defined by the cover stacks of the multiple cover stacks and a substrate support among a plurality of substrate supports. Purified gas is delivered to the transfer area of ​​the substrate processing system through a plurality of purifying channels extending through a transfer area housing that defines the transfer area of ​​the substrate processing system, wherein the transfer area is fluidly coupled to the plurality of processing areas. as well as The one or more treatment precursors and the purified gases are discharged through the pumping liner of the multiple stacked caps. The substrate processing system includes a transfer device located in the transfer region, the transfer device comprising: A rotatable shaft extending through the housing of the transfer region, and A terminal actuator coupled to the rotatable shaft, wherein the terminal actuator includes a central hub defining a central aperture fluidly coupled to a purification source, wherein the central aperture extends through the top surface of the central hub, and wherein the terminal actuator further includes a plurality of arms having a number of arms equal to the number of substrate supports of the plurality of substrate supports. The rotatable shaft defines one or more orifices that are fluidly coupled to a purification source and are configured to deliver purified gas to a central volume formed between the terminal actuator and the transfer area housing.

14. The semiconductor processing method of claim 13, further comprising: Additional purified gas is delivered via the rotatable shaft and delivered from the central bore defined by the central hub to the transfer region.

15. The semiconductor processing method of claim 14, wherein the central volume of the transfer region is at least partially defined by the central hub of the terminal actuator.

16. The semiconductor processing method of claim 15, further comprising: The additional purified gas is delivered through the rotatable shaft to the central volume of the transfer area.

17. The semiconductor processing method of claim 16, wherein the amount of the purifying gas delivered to the transfer region of the substrate processing system through a plurality of purifying channels is less than 80% of the amount of gas delivered through the plurality of cap stacks of the substrate processing system for the one or more processing precursors.

18. The semiconductor processing method of claim 17, wherein the purified gas delivered through the rotatable shaft and into the transfer region from the central aperture defined by the central hub is less than 20% of the total amount of the additional purified gas delivered through the rotatable shaft and into the central volume of the transfer region.

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