Fluid guiding device and wafer cleaning method

Abstract

The application provides a fluid guiding device, comprising: a main body structure, an inner side wall of which is sequentially provided with a first annular groove, a second annular groove and a third annular groove from bottom to top; a gas injection assembly formed in the main body structure, used for injecting gas to the side surface of a wafer to separate the mutual penetration of cleaning liquid on the upper and lower sides of the wafer; and a gas suction assembly formed in the main body structure, used for generating negative pressure airflow in the first annular groove and the third annular groove to guide the cleaning liquid on the upper and lower sides of the wafer to flow out in a set direction. The application also provides a wafer cleaning method based on the fluid guiding device. The device and method provided by the application realize the separation and flow guiding of the cleaning liquid on the wafer edge and the cleaning liquid on the wafer back, and avoid the problem that the cleaning liquid on the wafer back and the cleaning liquid on the wafer edge are splashed onto a photoresist layer and affect the uniformity of the photoresist layer thickness.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor manufacturing, in particular to a fluid guiding device and a wafer cleaning method. BACKGROUND

[0002] The existing photoresist coating process generally adopts the spin coating method, that is, under the condition of keeping the wafer rotating, the photoresist coating unit sprays photoresist to the front surface of the wafer and forms an expected photoresist layer. Under the action of surface tension and centrifugal force generated by rotation, the photoresist will flow to the edge of the wafer front surface, that is, the wafer edge, and accumulate at the wafer edge to form a photoresist by-product at the wafer edge. In the process of spin coating, the photoresist will also overflow to the back surface of the wafer under the action of surface tension to form a photoresist by-product at the wafer back surface. The photoresist by-products at the wafer edge and the wafer back surface are prone to falling off to form defect sources and are prone to contact contamination, and therefore need to be removed in time. At present, after spin coating is completed, the wafer is processed through the steps of edge bead removal (EBR) and back surface cleaning. The edge bead removal removes the photoresist by-product at the wafer edge, and the back surface cleaning removes the photoresist by-product and other by-products at the wafer back surface. In the prior art, in order to simplify the process flow, a wafer cleaning method is adopted, which simultaneously performs edge bead removal and back surface cleaning by spraying wafer edge cleaning liquid and wafer back surface cleaning liquid to the wafer edge and the wafer back surface respectively to remove the photoresist by-product and / or other by-products. The wafer back surface cleaning liquid has a more complex composition in order to remove the photoresist at the wafer back surface and other by-products at the wafer back surface, such as residual organic matter, metal or oxide, etc. In the wafer cleaning process of the prior art, the sprayed wafer edge cleaning liquid and wafer back surface cleaning liquid will penetrate into each other and mix, which reduces the cleaning effect; the sprayed cleaning liquid is prone to splashing onto the photoresist layer, and the cleaning liquid (especially the wafer back surface cleaning liquid) splashed onto the photoresist layer will reduce the thickness uniformity and cleanliness of the photoresist layer, especially the edge portion of the photoresist layer, thereby reducing the quality of the wafer cleaning process. SUMMARY

[0003] The present application aims to solve the problem of mutual penetration of the wafer back surface cleaning liquid and the wafer edge cleaning liquid, and the problem of splashing of the cleaning liquid onto the photoresist layer, thereby improving the thickness uniformity and cleanliness of the photoresist layer.

[0004] To solve the above problems, the present application provides a fluid guiding device, which can avoid the problem of mutual penetration of the wafer back surface cleaning liquid and the wafer edge cleaning liquid, and can improve the problem of splashing of the cleaning liquid onto the photoresist layer, thereby improving the thickness uniformity and cleanliness of the photoresist layer. The fluid guiding device provided by the present application comprises:

[0005] The main body structure is a hollow cylinder, and the inner side wall of the hollow cylinder is sequentially provided from bottom to top with a first annular groove, a second annular groove and a third annular groove;

[0006] The jetting assembly formed in the main body structure is used for jetting gas to the side surface of the wafer to prevent the mutual penetration of the cleaning liquid on the upper and lower sides of the wafer, and the jetting assembly at least comprises a jetting hole arranged at the bottom of the second annular groove.

[0007] The suction assembly formed in the main body structure is used for generating a negative pressure airflow in the first annular groove and the third annular groove to guide the cleaning liquid on the upper and lower sides of the wafer to flow in a set direction, and the suction assembly at least comprises a suction hole arranged at the bottom of the first annular groove and the third annular groove.

[0008] Preferably, the fluid guiding device further comprises two liquid pipelines, one end of each of the two liquid pipelines is in communication with the bottom of the first annular groove and the bottom of the third annular groove respectively, and the other end of each of the two liquid pipelines is in communication with the waste liquid collecting unit.

[0009] Preferably, the jetting assembly further comprises a gas pipeline, and the jetting hole is in communication with an external gas source through the gas pipeline.

[0010] Preferably, the suction assembly further comprises a vacuum pipeline, and the suction hole is in communication with an external vacuum generating device through the vacuum pipeline.

[0011] Preferably, the gas jetted by the jetting assembly is compressed air, and the pressure of the compressed air is greater than 1 MPa.

[0012] Preferably, the fluid guiding device further comprises a driving member fixedly connected with the main body structure and used for driving the main body structure to move in translation.

[0013] Preferably, the fluid guiding device further comprises a supporting member used for supporting the main body structure.

[0014] To solve the problem that the cleaning liquid on the wafer back and the cleaning liquid on the wafer edge can penetrate each other, and to solve the problem that the cleaning liquid is sputtered onto the photoresist layer to reduce the uniformity and cleanliness of the photoresist layer, the application further provides a wafer cleaning method, which comprises the following steps:

[0015] A wafer is provided, and a photoresist layer is formed on the front surface of the wafer through a gluing process;

[0016] The fluid guiding device is positioned so that the wafer is surrounded by the fluid guiding device and is at the same horizontal level as the jetting hole.

[0017] The front surface edge of the wafer and the wafer back are subjected to wet cleaning, and at the same time, the fluid guiding device is turned on, the jetting assembly jets gas to the side surface of the wafer to prevent the mutual penetration of the cleaning liquid on the upper and lower sides of the wafer, and the suction assembly generates a negative pressure airflow in the first annular groove and the third annular groove to guide the cleaning liquid to flow in a set direction.

[0018] Preferably, the wafer keeps rotating during wet cleaning and the wet cleaning is performed by spraying.

[0019] Preferably, the wafer is at the same level as the air injection hole when the fluid guiding device is positioned.

[0020] Compared with the prior art, the present application has the following advantages:

[0021] The fluid guiding device provided by the present application can generate an injection air flow and a negative pressure air flow. The injection air flow can prevent the cleaning liquid on the wafer edge from penetrating into the cleaning liquid on the wafer back. The negative pressure air flow can guide the cleaning liquid on the wafer edge and the cleaning liquid on the wafer back to separate from the wafer and enter the first annular groove and the third annular groove of the fluid guiding device, respectively, thereby improving the problem of the cleaning liquid splashing onto the photoresist layer and improving the thickness uniformity and cleanliness of the photoresist layer. The wafer cleaning method provided by the present application utilizes the fluid guiding device to separate and guide the cleaning liquid on the wafer edge and the cleaning liquid on the wafer back, thereby avoiding the problem of the cleaning liquid splashing onto the photoresist layer and affecting the thickness uniformity and cleanliness of the photoresist layer, and improving the quality of the cleaning process. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figures 1A-1D The structure diagram of the fluid guiding device provided by an embodiment of the present application is shown in the figure.

[0023] Figure 2 The step flow chart of the wafer cleaning method provided by an embodiment is shown in the figure.

[0024] Figures 3-5 The structure diagram of each step of the wafer cleaning method provided by an embodiment is shown in the figure.

[0025] In the figures, the reference signs are explained as follows:

[0026] 1-fluid guiding device; 10-main structure; 101-inner side wall; 11-first annular groove; 111-bottom of the first annular groove; 12-second annular groove; 121-bottom of the second annular groove; 13-third annular groove; 14-air injection assembly; 141-air injection hole; 142-air path; 1421-first air path branch; 1422-second air path branch; 15-air suction assembly; 151-air suction hole; 152-vacuum path; 1521-first vacuum branch; 1522-second vacuum branch; 16-liquid path; 2-wafer; D-device region; E-wafer edge; 20-wafer back; 201-photoresist byproduct on the wafer back; 21-photoresist layer; 211-photoresist byproduct on the wafer edge; 22-wafer side wall; 31-injection air flow; 32-negative pressure air flow; 40-nozzle; 41-first cleaning liquid; 42-second cleaning liquid. DETAILED DESCRIPTION

[0027] To make the objectives, advantages, and features of the present invention clearer, the fluid guiding device and wafer cleaning method provided by the present invention will be further described in detail below with reference to the accompanying drawings. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the explanation of the embodiments of the present invention.

[0028] Figures 1A-1D This is a schematic diagram of the structure of the fluid guiding device 1 provided in this embodiment, wherein... Figure 1A This is a top view of the fluid guiding device 1. Figure 1B For the fluid guiding device 1 along Figure 1A A cross-sectional view obtained by cutting AA' in the middle. Figure 1C For the fluid guiding device 1 along Figure 1B A cross-sectional view obtained by cutting off BB' in the middle. Figure 1D For the fluid guiding device 1 along Figure 1B A cross-sectional view obtained by truncating CC'. The fluid guiding device 1 provided in this embodiment may include:

[0029] The main structure 10 is a hollow cylinder. The inner wall 101 of the hollow cylinder has a first annular groove 11, a second annular groove 12, and a third annular groove 13 arranged sequentially from bottom to top. An air jet assembly 14 formed in the main structure 10 is used to spray gas onto the sides of the wafer to prevent the mutual penetration of cleaning fluid between the upper and lower sides of the wafer. The air jet assembly 14 includes an air jet hole 141, which is located at the bottom 121 of the second annular groove 12. An air suction assembly 15 formed in the main structure 10 is used to generate negative pressure airflow in the first annular groove 11 and the third annular groove 13 to guide the cleaning fluid on the upper and lower sides of the wafer to discharge in a predetermined direction. The air suction assembly 15 includes an air suction hole 151, which is located at the bottom 111 of the first annular groove 11 and the bottom of the third annular groove 13.

[0030] In this embodiment, the jet assembly further includes an air passage 142, through which the jet port 141 is connected to an external air source; the suction assembly 15 further includes a vacuum pipe 152, through which the suction port 151 is connected to an external vacuum generator.

[0031] In the embodiment, the fluid guiding device 1 further comprises two liquid pipes 16, one end of each of the two liquid pipes 16 is communicated with the bottom of the first annular groove 11 and the bottom of the third annular groove 13 respectively, and the other end is communicated with a waste liquid collecting unit. Preferably, an air extraction device is arranged on the liquid pipe 16, the air extraction device can generate a negative pressure in the liquid pipe 16, and the cleaning liquid flowing into the first annular groove 11 and the third annular groove 13 is extracted by the negative pressure.

[0032] It can be understood that the air injection holes 141 and the air suction holes 151 are multiple, preferably, the multiple air injection holes 141 are uniformly distributed on the bottom 121 of the second annular groove 12, and the multiple air suction holes 151 are uniformly distributed on the bottom 111 of the first annular groove 11 and the bottom of the third annular groove 13, so as to ensure the uniformity of the air flow injected by the air injection holes 141 and the uniformity of the negative pressure air flow generated in the first annular groove 11 and the third annular groove 13.

[0033] Please refer to Figure 1C In the embodiment, the air path 142 comprises a first air path branch 1421 and a second air path branch 1422, the first air path branch 1421 is an annular hollow cavity and is arranged around the bottom 121 of the second annular groove, and one end of the second air path branch 1422 is communicated with the first air path branch 1421 and the other end is communicated with an external gas source. The gas provided by the external gas source enters the first air path branch 1421 through the second air path branch 1422 and is injected out through the air injection holes 141 to form a jet air flow. Preferably, the external gas source is compressed air, and the pressure of the compressed air is greater than 1 MPa. Selecting the high-pressure gas source with a pressure greater than 1 MPa as the external gas source can ensure that the injected gas can well separate the mutual penetration of the cleaning liquid on the upper and lower sides of the wafer.

[0034] Please refer to Figure 1DIn the present embodiment, the vacuum pipeline 152 comprises a first vacuum branch 1521 and a second vacuum branch 1522, the first vacuum branch 1521 is an annular hollow cavity and surrounds the bottom 111 of the first annular groove 11 and / or the bottom of the third annular groove 13, the second vacuum branch 1522 is communicated with the first vacuum branch 1521 at one end and communicated with an external vacuum generating device at the other end. When the external vacuum generating device works, a negative pressure is generated in the first vacuum branch 1521 and the second vacuum branch 1522, under the action of the negative pressure, the gas in the first annular groove 11 and the third annular groove 13 enters the vacuum pipeline 152 through the air inlet hole 151 and is finally drawn away by the external vacuum generating device, at the same time, a negative pressure airflow is formed in the first annular groove 11 and the third annular groove 13, when the fluid flow guide device works, the negative pressure airflow can guide the cleaning liquid on the upper and lower sides of the wafer to enter the first annular groove 11 and the third annular groove 13 respectively and finally flow into the waste liquid collecting unit through the liquid pipeline 16.

[0035] Figures 1B-1D In the present embodiment, the bottoms of the first groove 11, the second groove 12 and the third groove 13 are schematically shown by lines, but it can be understood that each bottom can have a suitable thickness, the air outlet hole 141 and the air inlet hole 151 are through holes penetrating the bottom of the corresponding groove.

[0036] It should be noted that the arrangement of each external connecting port of the air path 142, the vacuum pipeline 152 and the liquid pipeline 16 on the outer side wall of the main body structure 10 is not fixed, Figure 1B In the present embodiment, each external connecting port is schematically arranged in the same cross section, only to facilitate the description of the overall structure of the fluid flow guide device 1, and does not limit the arrangement or relative position of each external connecting port.

[0037] In the embodiment, the second annular groove 12 is preferably arranged at the middle of the inner side wall 101, and has a symmetry center which coincides with the symmetry center of the main body structure 10, which is more convenient for the alignment of the jet hole 141 and the side wall of the wafer to be cleaned. In the embodiment, the first annular groove 11 and the third annular groove 13 are arranged below and above the second annular groove 12 respectively, and are parallel to each other. The groove depths of the first annular groove 11, the second annular groove 12 and the third annular groove 13 can be determined according to actual process requirements; the groove width of the second annular groove 12 is preferably not more than 10 μm, and the groove widths of the first annular groove 11 and the third annular groove 13 are preferably not more than 1 cm. The main body structure 10 is a hollow cylinder, and its inner diameter needs to be larger than the diameter of the wafer to be cleaned. Preferably, the inner diameter of the main body structure 10 is 0.1-2 cm larger than the inner diameter of the wafer to be cleaned, so the inner diameter of the main body structure 10 can be determined according to the size of the wafer to be cleaned.

[0038] The fluid guiding device 1 can further comprise a support for supporting and placing the main body structure. The support is preferably a platform arranged below the main body structure 10, but is not limited thereto, for example, can also be a support frame arranged at the side of the main body structure 10.

[0039] The fluid guiding device 1 can further comprise a driving member fixedly connected with the main body structure, for driving the translational movement of the main body structure. Under the driving of the driving member, the fluid guiding device 1 moves and approaches the wafer, and finally is positioned at the expected position; or under the driving of the driving member, the fluid guiding device 1 retreats from the expected position to the support.

[0040] The working principle of the fluid guiding device 1 is as follows: the fluid guiding device 1 is positioned so that the wafer after the glue coating treatment is surrounded by the fluid guiding device 1 and the center of the wafer and the jet hole 141 are at the same horizontal level; while the edge de-gluing and back cleaning of the wafer are performed, the fluid guiding device 1 is operated, so that the jet hole 141 forms a jet air flow, and negative pressure air flows are generated in the first annular groove 11 and the third annular groove 13; the jet air flow forms an air curtain to separate the edge and the back of the wafer, avoiding the mixing of the cleaning liquid for the edge and the cleaning liquid for the back, and thus avoiding the adverse effects caused by the mixing of the cleaning liquids; the negative pressure air flows generate suction forces to guide the cleaning liquid for the edge to flow to the third annular groove 13 and to guide the cleaning liquid for the back to flow to the first annular groove 11, so as to avoid the splashing of the cleaning liquid to the photoresist layer of the wafer.

[0041] Meanwhile, the application further provides a wafer cleaning method based on the above fluid guiding device 1. Please refer toFigure 2 The wafer cleaning method provided by the embodiment comprises the following steps:

[0042] Step S1: providing a wafer, and performing glue coating treatment on the wafer to form a photoresist layer on the front surface of the wafer, wherein the front surface of the wafer comprises a device region and a wafer edge surrounding the device region;

[0043] Step S2: providing the fluid guiding device, and positioning the fluid guiding device so that the wafer is surrounded by the fluid guiding device;

[0044] Step S3: performing wet cleaning on the wafer edge and wafer back, and simultaneously starting the fluid guiding device, wherein the air jet assembly sprays air on the sidewall of the wafer to prevent the cleaning liquid on the upper and lower sides of the wafer from penetrating each other, and the air suction assembly guides the cleaning liquid to flow out in a set direction.

[0045] Please refer to Figure 3 Step S1 is performed to provide a wafer 2, and glue coating treatment is performed on the wafer 2 to form a photoresist layer 21 on the front surface of the wafer 2, wherein the front surface of the wafer 2 comprises a device region D and a wafer edge E surrounding the device region D. The device region D is used to form various device structures, and the wafer edge E is difficult to form a device structure meeting the expectation due to reasons such as uneven thickness and edge effect. Generally, the wafer edge E is a circular ring region with a thickness of several microns, and the thickness can be determined according to actual process requirements. At the same time of forming the photoresist layer 21, wafer edge photoresist byproduct 211 is deposited on the wafer edge E, and the deposited wafer edge photoresist byproduct 211 is thicker under the action of centrifugal force and surface tension. The wafer edge photoresist byproduct 211 is easy to fall off and will pollute the mechanical arm when in contact with the mechanical arm, and thus needs to be removed in time. Under the action of surface tension, the wafer edge photoresist byproduct 211 will flow to the wafer back 20 through the wafer sidewall 22 and be deposited on the wafer back 20 to form wafer back photoresist byproduct 201, which is easy to fall off and form a defect source, and thus also needs to be removed in time.

[0046] In the embodiment, the glue coating treatment is performed in an existing glue coating machine. The glue coating machine comprises a turntable and a glue coating nozzle. First, the wafer 2 is conveyed and fixed on the turntable of the glue coating machine. Then, the glue coating nozzle is moved above the center of the wafer, the glue coating nozzle comprises two spray pipes, one of the spray pipes sprays a certain amount of organic solvent first, and at the same time, the turntable rotates slowly. After the organic solvent covers the entire wafer, the turntable stops. The organic solvent makes the wafer surface wet, which is more conducive to the subsequent uniform spin coating of the photoresist. Finally, the other spray pipe of the glue coating nozzle sprays a certain amount of photoresist onto the wafer 2, and at the same time, the turntable rotates at a set speed to make the photoresist cover the entire surface of the wafer 2 to form the photoresist layer 21, and the turntable stops, thereby completing the glue coating treatment.

[0047] Referring to Figure 4 , the step S2 is performed to provide the fluid guiding device 1, and the fluid guiding device 1 is positioned so that the wafer 2 is surrounded by the fluid guiding device 1.

[0048] Preferably, the center of the wafer 2 is at the same level as the jet hole 141. Preferably, the jet range of the jet hole 141 does not exceed the range of the wafer side wall 22, so as to prevent the jet hole 141 from jetting gas to the front and back of the wafer.

[0049] Referring to Figure 5 , the step S3 is performed to wet clean the wafer back 20 and the wafer edge E, while the fluid guiding device 1 is turned on, the jet assembly 14 jets gas to the wafer side wall 22 to prevent the cleaning liquid on the upper and lower sides of the wafer 2 from penetrating each other, and the suction assembly 15 guides the cleaning liquid to flow out in a set direction.

[0050] Preferably, the wafer edge E and the wafer back 20 are wet cleaned by spraying while the wafer 2 is kept rotating, so as to remove the byproducts of the wafer edge E and the wafer back 20. The wet cleaning includes edge stripping and wafer back cleaning, and in this embodiment, the edge stripping and wafer back cleaning are performed simultaneously, that is, the nozzle 40 sprays the first cleaning liquid 41 to the wafer edge E, and the nozzle 40 sprays the second cleaning liquid 42 to the wafer back 20, the first cleaning liquid 41 and the second cleaning liquid 42 clean the wafer edge E and the wafer back 20 respectively, and remove the byproducts of the wafer edge E and the wafer back 20 respectively. The byproducts of the wafer edge E include wafer edge photoresist byproducts 211. The byproducts of the wafer back 20 include wafer back photoresist byproducts 201, and can also include other byproducts, such as residual organic matter, oxide or metal byproducts.

[0051] In step S3, when the fluid guiding device 1 is turned on, the external gas source provides high-pressure gas through the gas path 142 in the jet assembly 14, the high-pressure gas is jetted to the wafer side wall 22 through the jet hole 141 in the jet assembly 14, forming a jet gas flow 31, the jet gas flow 31 forms an air curtain to separate the wafer edge E and the wafer back 20, so that the first cleaning liquid 41 of the wafer edge E cannot flow to the wafer back 20 through the wafer side wall 22; and the second cleaning liquid 42 of the wafer back 20 cannot be splashed to the wafer edge E due to the blocking of the air curtain formed by the jet gas flow 31. Therefore, the jet gas flow 31 avoids the mutual penetration of the first cleaning liquid 41 of the wafer edge E and the second cleaning liquid 42 of the wafer back 20, thereby ensuring the cleaning effect of the first cleaning liquid 41 and the second cleaning liquid 42.

[0052] In step S3, when the fluid flow guide device 1 is turned on, the external vacuum generating device draws gas from the first annular groove 11 and the third annular groove 13 through the vacuum pipeline 152 in the suction assembly 15 and the suction hole 151, so as to generate a negative pressure airflow 32 in the first annular groove 11 and the third annular groove 13, which respectively guides the first cleaning liquid 41 of the crystal edge E into the first annular groove 11 and the second cleaning liquid 42 of the crystal back 20 into the third annular groove 13, thereby avoiding the problem of splashing of the first cleaning liquid or the second cleaning liquid to the edge portion of the photoresist layer 21.

[0053] It should be noted that the inventors have found through research and analysis that the problem of splashing of cleaning liquid to the photoresist layer in the prior art is mainly caused by the following reasons: the reverse airflow is formed at the crystal edge due to the high-speed rotation of the wafer, the reverse airflow is opposite to the direction of the centrifugal force, and will block the cleaning liquid from being thrown away from the wafer by the centrifugal force. Moreover, due to the high-speed rotation of the wafer, the cleaning liquid at the edge of the wafer is easy to be atomized, and the atomized cleaning liquid is small in density and is more likely to be blown to the photoresist layer by the reverse airflow, thereby reducing the thickness uniformity of the photoresist layer. The negative pressure airflow 32 generated by the fluid flow guide device 1 can effectively offset the reverse airflow and form a suction force to draw away the atomized cleaning liquid. Therefore, the fluid flow guide device 1 can effectively draw away the atomized cleaning liquid, thereby avoiding the problem of splashing of the atomized cleaning liquid to the photoresist layer.

[0054] In the present embodiment, the cleaning liquid flowing into the first annular groove 11 and the third annular groove 13 can flow to the waste liquid collecting unit through the liquid pipeline 16. Preferably, an air extraction device is arranged on the liquid pipeline 16, which can generate a negative pressure in the liquid pipeline 16 to draw away the cleaning liquid flowing into the first annular groove 11 and the third annular groove 13.

[0055] In summary, the fluid flow guide device provided by the present application can form a jet airflow and a negative pressure airflow. The jet airflow can block the cleaning liquid at the crystal edge and the cleaning liquid at the crystal back from penetrating each other, thereby avoiding the adverse effects caused by the mutual penetration of the cleaning liquid. The negative pressure airflow can offset the reverse airflow generated at the crystal edge due to the high-speed rotation of the wafer, and the cleaning liquid at the crystal edge and the cleaning liquid at the crystal back are separated from the wafer and respectively enter the first annular groove and the third annular groove of the fluid flow guide device under the guidance of the negative pressure airflow, thereby avoiding the problem of splashing of the cleaning liquid to the photoresist layer of the wafer. The wafer cleaning method provided by the present application uses the fluid flow guide device to separate and guide the cleaning liquid at the crystal edge and the cleaning liquid at the crystal back, thereby avoiding the problem of splashing of the cleaning liquid to the photoresist layer and affecting the thickness uniformity and cleanliness of the photoresist layer, and improving the quality of the cleaning process.

[0056] Furthermore, it is to be understood that the application is defined by the appended claims, not by the foregoing description. Changes can be made to the application in light of the above description. Changes can be made to the application in light of design changes in the or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes can be made to the application in light of changes in or relating to the technology that the application addresses. Changes

Claims

1. A fluid flow directing device, characterized by, The fluid flow guiding device comprises: a main body structure, which is a hollow cylinder, and an inner side wall of the hollow cylinder is sequentially provided with a first annular groove, a second annular groove and a third annular groove from bottom to top; a gas injection assembly formed in the main body structure, which is used for injecting gas to the side wall of the wafer to prevent the mutual penetration of cleaning liquid on the upper and lower sides of the wafer, and the gas injection assembly comprises a plurality of gas injection holes which are uniformly distributed at the bottom of the second annular groove; a gas suction assembly formed in the main body structure, which is used for generating negative pressure airflow in the first annular groove and the third annular groove to guide the cleaning liquid on the upper and lower sides of the wafer to flow in a set direction, and the gas suction assembly comprises a plurality of gas suction holes which are arranged at the bottom of the first annular groove and the third annular groove.

2. The fluid flow conduit of claim 1, wherein, The fluid flow guiding device further comprises two liquid pipelines, one end of each of the two liquid pipelines is in communication with the bottom of the first annular groove and the bottom of the third annular groove respectively, and the other end of each of the two liquid pipelines is in communication with a waste liquid collecting unit.

3. The fluid flow conduit of claim 1, wherein, The gas injection assembly further comprises a gas pipeline, and the gas injection holes are in communication with an external gas source through the gas pipeline.

4. The fluid flow conduit of claim 1, wherein, The gas suction assembly further comprises a vacuum pipeline, and the gas suction holes are in communication with an external vacuum generating device through the vacuum pipeline.

5. The fluid flow conduit of claim 1, wherein, The gas injected by the gas injection assembly is compressed air, and the pressure of the compressed air is greater than 1 MPa.

6. The fluid flow conduit of claim 1, wherein, The fluid flow guiding device further comprises a driving member which is fixedly connected with the main body structure and is used for driving the main body structure to move in translation.

7. The fluid flow conduit of claim 1, wherein, The fluid flow guiding device further comprises a supporting member which is used for supporting the main body structure.

8. A wafer cleaning method characterized by, The method comprises the following steps: providing a wafer, and performing a glue coating treatment on the wafer to form a photoresist layer on the front surface of the wafer; providing the fluid flow guiding device according to any one of claims 1 to 7, and positioning the fluid flow guiding device so that the wafer is surrounded by the fluid flow guiding device; performing a wet cleaning on the edge of the front surface of the wafer and the back surface of the wafer while the fluid flow guiding device is turned on, the gas injection assembly of the fluid flow guiding device injects gas to the side wall of the wafer to prevent the mutual penetration of cleaning liquid on the upper and lower sides of the wafer, and the gas suction assembly of the fluid flow guiding device guides the cleaning liquid to flow in a set direction.

9. The wafer cleaning method of claim 8, wherein, When the back surface of the wafer and the edge of the wafer are wet cleaned, the wafer is kept rotating and the wet cleaning is performed in a spraying manner.

10. The wafer cleaning method of claim 8, wherein, When the fluid flow guiding device is positioned, the wafer is at the same horizontal level as the gas injection holes.

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