A semiconductor laser bar and a preparation method thereof

Abstract

The present invention relates to a semiconductor laser bar and a preparation method thereof. The semiconductor laser bar includes a bar body which is in a long plate-like structure and includes a long side and a short side. The semiconductor laser bar further includes: a plurality of light-emitting units which are integrally arranged on the bar body, and the plurality of light-emitting units are arranged at intervals along the extension direction of the long side of the bar body; a spacer which is in a strip-like structure, and the spacer is integrally arranged on both sides of the light-emitting units along the extension direction of the long side of the bar body. The length of the spacer is the same as the length of the long side of the bar body, and the height of the spacer is higher than that of the light-emitting units. The spacer can block the light-emitting units on both sides. In the present invention, the spacer is integrally arranged on the bar body, so that there is no need to use a dummy bar during optical coating, which reduces the coating cost and increases the number of bars in the same coating fixture at the same time.

Description

Technical Field

[0001] The present invention relates to the field of optical communication technologies, and particularly to a semiconductor laser bar and a preparation method thereof. Background Art

[0002] A bar generally refers to an LD bar, that is, a semiconductor laser bar, which is mainly used in the field of 5G fiber optic communication and mainly for the transmitting signal end of fiber optic communication. Its function is to convert high-frequency electrical signals into high-frequency optical signals.

[0003] When preparing a bar, it is necessary to perform optical coating treatment on the bar, that is, to deposit corresponding optical dielectric film layers on both side edges of the bar. In order to prevent problems such as uneven coating of the bar, spacer bars are arranged at intervals between bars.

[0004] Adopting the above scheme requires a large number of spacer bars. Moreover, in order to ensure the accuracy of the position where the spacer bars are placed, it is also necessary to set up special molds or use a robotic arm for positioning and assembly, which increases the cost of coating and also reduces the coating efficiency. Summary of the Invention

[0005] Therefore, the technical problem to be solved by the present invention is to overcome the problem of setting spacer bars when performing optical coating on a semiconductor laser bar in the prior art, and to provide a semiconductor laser bar and a preparation method thereof. A spacer block is integrally arranged on the bar body, and spacer bars do not need to be used during optical coating, which reduces the coating cost and also increases the number of bars in the same coating fixture.

[0006] To solve the above technical problem, the present invention provides a semiconductor laser bar, including a bar body. The bar body is in a long plate-like structure, including a long side and a short side, and further includes:

[0007] A plurality of light-emitting units, which are integrally arranged on the bar body, and the plurality of light-emitting units are arranged at intervals along the extending direction of the long side of the bar body;

[0008] A spacer block. The spacer block is in a long strip-like structure. The spacer block is integrally arranged on both sides of the light-emitting unit along the extending direction of the long side of the bar body. The length of the spacer block is the same as the length of the long side of the bar body. The height of the spacer block is higher than that of the light-emitting unit. The spacer block can block on both sides of the light-emitting unit during the coating process.

[0009] In an embodiment of the present invention, the spacer blocks are arranged on both sides of the light-emitting unit, close to the long side of the bar body, and the two spacer blocks are arranged parallel to the long side of the bar body.

[0010] In one embodiment of the present invention, on the bar strip body, multiple groups of the light-emitting units are integrally arranged at equal intervals.

[0011] In one embodiment of the present invention, on the bar strip body, the intervals between the light-emitting units located at the middle position are relatively wide, and the intervals between the light-emitting units in the two end regions are relatively narrow.

[0012] In one embodiment of the present invention, the light-emitting unit is a semiconductor laser chip.

[0013] In one embodiment of the present invention, the spacer block is a metal spacer block.

[0014] In one embodiment of the present invention, the spacer block is integrally formed with the bar strip body.

[0015] To solve the above technical problems, the present invention also provides a preparation method for a semiconductor laser bar strip, including the following steps:

[0016] Obtain the initial chip data of the bar strip and determine the distribution positions of the light-emitting units on the bar strip;

[0017] According to the distribution positions of the light-emitting units, lithographically engrave the electrode patterns of the energized light-emitting units on the bar strip;

[0018] Avoiding the lithographically engraved pattern, encapsulate spacer blocks on both sides of the pattern, and set the height of the spacer blocks higher than that of the metal pattern.

[0019] In one embodiment of the present invention, the spacer block is a metal spacer block, and the metal spacer block is prepared on the bar strip body by electroplating or evaporation plating.

[0020] In one embodiment of the present invention, after preparing the metal spacer blocks, it is also necessary to perform peeling and shaping treatments on the metal spacer blocks.

[0021] The above technical solutions of the present invention have the following advantages compared with the prior art:

[0022] For the semiconductor laser bar strip of the present invention, a strip-shaped spacer block is also integrally arranged on the existing bar strip body. The spacer block is integrally arranged on both sides of the light-emitting unit along the extension direction of the long side of the bar strip body, and the height of the spacer block is higher than that of the light-emitting unit. Through the spacer block, it can block the light-emitting unit on both sides during the coating process. In this way, when optically coating the bar strip, it is not necessary to separately use a companion bar to block the inside of the bar strip. The spacer block is equivalent to the companion bar and can play a role in blocking. In this way, during coating, the coating cost can be reduced, and at the same time, the number of bar strips in the same coating fixture can be increased. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] To make the content of the present invention easier to be clearly understood, the following further details the present invention according to specific embodiments of the present invention in combination with the accompanying drawings, wherein

[0024] Figure 1 is a schematic structural diagram of bar strip coating in the prior art;

[0025] Figure 2 is a schematic structural diagram of the bar strip of the present invention;

[0026] Figure 3 is a flowchart of the steps for preparing the bar strip of the present invention;

[0027] Figure 4 is a schematic structural diagram of bar strip coating of the present invention.

[0028] Explanation of the reference numerals in the specification drawings: 1, bar strip body; 2, light-emitting unit; 3, spacer block; 4, spacer bar. Detailed implementation manners

[0029] The following further illustrates the present invention in combination with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and be able to implement it, but the examples given are not intended to limit the present invention.

[0030] As mentioned above, when preparing the bar strip, it is necessary to coat the side surface of the bar strip, but the encapsulation surface of the bar strip equipped with the light-emitting unit does not need to be coated. Referring to Figure 1 shown, in order to achieve such a coating effect, when coating multiple stacked bar strips, a spacer bar is placed between two adjacent bar strips. The spacer bar can not only play a role in separating and supporting, but also play a role in shielding, so that the side coating of the bar strip can be realized; when placing the spacer bar, the prior art generally adopts two schemes: one is to place the spacer bar manually, in which case the placement position of the spacer bar is inaccurate and the efficiency of placing the spacer bar is low; the other is to place the spacer bar by setting a mold or using mechanical equipment to automatically grab it, which can improve the efficiency and accuracy, but the cost is high, and a separate feeding and discharging device for the spacer bar needs to be introduced.

[0031] In summary, in order to solve the coating problem of the bar strip, the technical solutions and breakthrough technical directions adopted in the prior art focus on how to assemble the spacer bar. The technical solution of the present invention starts from another angle and wants to design a semiconductor laser bar strip that does not set a spacer bar during coating and can also play a shielding role.

[0032] Embodiment 1

[0033] Referring to Figure 2As shown in the figure, the present invention discloses a semiconductor laser bar, which includes a bar body 1. The bar body 1 is in the shape of a long plate, including a long side and a short side. The general dimensions of the bar body 1 are 15 - 20 mm in length, 150 - 250 μm in width, and 100 - 110 μm in thickness. According to actual usage requirements, bar strips of different sizes are selected. A plurality of light-emitting units 2 and pads 3 are also integrally provided on the bar body 1. Among them, the plurality of light-emitting units 2 are arranged at intervals along the extension direction of the long side of the bar body 1. The pad 3 is in the shape of a long strip, and the pad 3 is integrally provided on both sides of the light-emitting unit 2 along the extension direction of the long side of the bar body 1. The length of the pad 3 is the same as the length of the long side of the bar body 1. The height of the pad 3 is higher than that of the light-emitting unit 2. The pad 3 can block the light-emitting unit 2 on both sides. In this way, when optical coating is performed on the bar, it is not necessary to separately use a companion bar to block the inside of the bar. The pad 3 is equivalent to the companion bar and can play a blocking role. In this way, when coating, the bar can be not used, and there will be no technical problems in placing the bar, which can reduce the coating cost and improve the coating efficiency at the same time.

[0034] In this embodiment, the provided pad 3 is not originally a structure on the bar body 1. Therefore, when setting the pad 3, it is necessary to consider that it cannot affect the performance of the bar itself, that is, setting the pad 3 cannot affect the normal operation of the light-emitting unit 2. Therefore, when setting the pad 3, the pad 3 is set on both sides of the light-emitting unit 2, on the setting surface of the bar body 1, as close as possible to the long side of the bar body 1, away from the light-emitting unit 2, to avoid interfering with the light-emitting unit 2, and the two pads 3 are set parallel to the long side of the bar body 1.

[0035] Specifically, in order to facilitate the setting of the pad 3 and not increase the corresponding forming process, the pad 3 is set as a metal pad 3, and the pad 3 is integrally formed with the bar body 1. When preparing the bar body 1, the pad 3 is prepared at the same time, and no other forming process is required.

[0036] Specifically, according to different usage requirements, multiple groups of the light-emitting units 2 are integrally arranged at equal intervals on the bar body 1, and the structures and sizes of the multiple groups of the light-emitting units 2 are the same; however, in the actual use process, it is found that the temperature distributions of the individual light-emitting units 2 are uneven, the temperature of the middle light-emitting unit 2 is high, while the temperatures of the light-emitting units 2 on both sides are low. Temperature is one of the key factors restricting the semiconductor laser bar. Temperature changes will cause changes in performance indicators such as the bandgap width, threshold current, and output power; to solve this problem, the present invention also discloses another scheme for setting the light-emitting unit 2:

[0037] On the bar strip body 1, the light-emitting units 2 located in the middle position are set with a relatively wide interval, and the light-emitting units 2 in the two end regions are set with a relatively narrow interval. Multiple groups of light-emitting units 2 are arranged from the middle of the bar strip to both ends of the bar strip, and the distances of the intervals at each place decrease in sequence. In this way, the number of light-emitting units 2 in the middle position is small, which can relatively reduce the temperature in the middle position and make the temperatures of the light-emitting units 2 at each position evenly distributed.

[0038] Specifically, the light-emitting unit 2 is a semiconductor laser chip. The semiconductor laser chip can adopt different packaging methods according to different usage requirements, and can be packaged by using the existing technology. For example, the Chinese patent with the publication number: CN107482471A and the invention name: A semiconductor laser bar and its preparation method discloses a packaging method for a semiconductor laser chip. It can be seen from this that the packaging method of the semiconductor laser chip is an existing technology and will not be elaborated here.

[0039] Embodiment 2

[0040] Referring to Figure 3 As shown, the present invention also discloses a preparation method for a semiconductor laser bar, which can prepare the semiconductor laser bar described in the above Embodiment 1, including the following steps:

[0041] Obtain the initial chip data of the bar strip and determine the distribution positions of the light-emitting units 2 on the bar strip;

[0042] According to the distribution positions of the light-emitting units 2, lithograph the electrode patterns of the light-emitting units 2 for power supply on the bar strip;

[0043] Avoid the lithographed pattern and encapsulate the spacer blocks 3 on both sides of the pattern, and set the height of the spacer blocks 3 higher than the lithographed electrode pattern;

[0044] By using the above method, after determining the light-emitting units 2, long strip-shaped spacer blocks 3 for avoiding the light-emitting units 2 are also integrally arranged on the existing bar strip body 1. The spacer blocks 3 can block the light-emitting units 2 on both sides. In this way, when optical coating the bar strip, it is not necessary to separately use a companion strip to block the inside of the bar strip. The spacer blocks 3 are equivalent to the companion strip and can play a blocking role. In this way, when coating, the coating cost can be reduced, and at the same time, the coating efficiency is also improved.

[0045] Specifically, in the preparation method of this embodiment, the spacer blocks 3 are set as metal spacer blocks 3, and the metal spacer blocks 3 are prepared on the bar strip body 1 by electroplating or evaporation plating, so that the metal spacer blocks 3 are integrally formed with the bar strip body 1.

[0046] Specifically, after preparing the metal spacer 3, it is also necessary to perform stripping and forming treatments on the metal spacer 3, and further process the metal spacer 3 so that it can play a role in shielding.

[0047] Referring to Figure 4 As shown, compared with the prior art, in this embodiment, the process of preparing and coating the semiconductor laser bar is as follows: lithographic patterning, electroplating or evaporating metal (including the metal spacer 3), metal stripping, metal forming, bar strip arranging, coating, and bar strip unloading. The processes of arranging and unloading the accompanying bars are omitted. When coating, only multiple groups of bar strips need to be stacked together, separated by the spacer 3, and the inside of the bar strips can be shielded.

[0048] Obviously, the above embodiments are only examples given for clear illustration and are not limitations on the implementation manners. For those of ordinary skill in the art, other different forms of changes or variations can be made based on the above description. It is not necessary and impossible to list all the implementation manners here. And the obvious changes or variations derived therefrom are still within the protection scope of the present invention.

Claims

1. A semiconductor laser bar, comprising a bar body which is a long plate-like structure including a long side and a short side, characterized in that, Further included are: A plurality of light-emitting units, integrally arranged on the bar body, and the plurality of light-emitting units are arranged at intervals along the extending direction of the long side of the bar body; A spacer block, the spacer block is in a strip-shaped structure, the spacer block is integrally arranged on both sides of the light-emitting unit along the extending direction of the long side of the bar body, the length of the spacer block is the same as the length of the long side of the bar body, the height of the spacer block is higher than that of the light-emitting unit, and the spacer block can shield the light-emitting unit on both sides.

2. The semiconductor laser bar according to claim 1, wherein: The spacer block is arranged on both sides of the light-emitting unit, close to the long side of the bar body, and the two spacer blocks are arranged parallel to the long side of the bar body.

3. The semiconductor laser bar according to claim 1, characterized in that: On the bar body, multiple groups of the light-emitting units are integrally arranged at equal intervals.

4. The semiconductor laser bar according to claim 1, characterized in that: On the bar body, the intervals between the light-emitting units at the middle position are relatively wide, and the intervals between the light-emitting units at the two end regions are relatively narrow.

5. The semiconductor laser bar according to claim 1, wherein: The light-emitting unit is a semiconductor laser chip.

6. The semiconductor laser bar according to claim 1, wherein: The spacer block is a metal spacer block.

7. The semiconductor laser bar according to claim 6, wherein: The spacer block and the bar body are integrally formed.

8. A method for preparing a semiconductor laser bar, which is used to prepare the semiconductor laser bar according to any one of claims 1 to 7 above, characterized in that: Including the following steps: Obtain the initial chip data of the bar, and determine the distribution positions of the light-emitting units on the bar; According to the distribution positions of the light-emitting units, lithograph the light-emitting unit electrode patterns for power supply on the bar; Encapsulate the spacer blocks on both sides of the electrode pattern, and set the height of the spacer block to be higher than that of the electrode pattern.

9. The preparation method according to claim 8, wherein: The spacer block is a metal spacer block, and the metal spacer block is prepared on the bar body by electroplating or evaporation plating.

10. The preparation method according to claim 9, characterized in that: After preparing the metal spacer block, perform peeling and forming treatment on the metal spacer block.

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