An electric field sensor based on a chromium telluride resonance structure

Abstract

This invention discloses an electric field sensor based on a chromium telluride resonant structure, comprising a chromium telluride layer, a first charge dielectric layer, a second charge dielectric layer, a charge residence region, a fixed support, and a fixed block. The chromium telluride layer is fixedly connected to the fixed block, and the fixed block is fixedly connected to the fixed support. The charge dielectric layer is disposed on the surface of the chromium telluride layer. This invention converts the measurement of the external electric field into a change in the resonant frequency of the chromium telluride layer. The intensity of the external electric field is determined by the change in the resonant frequency of the chromium telluride layer, thus obtaining the intensity of the external electric field. Due to the excellent resonant characteristics of the chromium telluride layer itself, the sensitivity and reliability of the electric field sensor are greatly improved. Furthermore, it can achieve a wide measurement range, excellent performance, low cost, and small size, and is easy to mass-produce.

Description

Technical Field

[0001] This invention belongs to the field of electric field sensor technology, and in particular relates to an electric field sensor based on a chromium telluride resonance structure. Background Technology

[0002] Accurate measurement of electric fields plays an important role in many fields. Currently, based on the type of current, electric field strength measurement can be divided into DC electric field strength measurement and AC electric field strength measurement, with AC electric field strength measurement mainly focusing on the measurement of power frequency electric fields.

[0003] There are currently three methods for measuring DC electric field strength. The first is the probe method: a conductor probe is placed in the field to be measured, and the electric field strength is obtained by measuring the potential difference between the probe and the reference ground. This method requires a fast measurement speed, can only use an impulse galvanometer to measure transient signals, and has a large measurement error. The second method is the variable capacitor method: by changing the relative area of ​​the two plates of the capacitor, the DC induced voltage signal is converted into an alternating signal, and the electric field strength to be measured is obtained through signal amplification and processing. The third method utilizes the Pockels effect of certain crystal materials: the electric field strength is measured based on the size of the refraction angle of the birefringence phenomenon.

[0004] For measuring power frequency electric field strength, early methods primarily employed approaches based on electrical principles, such as the ball method and the capacitor charging method (including the potential balance method and the charge method). The potential balance method measures the electric field by measuring the potential distribution, but its accuracy is relatively poor. The charge method measures the electric field by calculating the charge captured by the ball in the electric field, and it is most widely used for measuring strong electric fields, including power frequency fields. In recent years, optically based electric field measuring instruments have been widely used for measuring electric fields with higher amplitude and frequency. However, these electric field sensors are expensive, and some technical problems still need to be solved, such as the temperature sensitivity of electro-optic effect sensors. The use of charge-inductive electric field sensors to measure high-voltage power frequency electric fields was first proposed in the 1960s. Since the early 1970s, research in this field has flourished both domestically and internationally. Electric field sensors with structures such as double spheres, micro-rockets, and rotary plates for measuring space electric fields have been used in aerospace and other fields for a considerable period of time. Measuring power frequency electric fields using the principle of electrostatic induction involves introducing a sensor into the electric field to be measured, obtaining the electric field signal, and converting this signal into a voltage signal proportional to the magnitude of the electric field strength. Subsequent circuitry (filtering, amplification, A / D conversion, data processing, etc.) is then used to calculate the strength of the electric field. Under the influence of an alternating electric field, the surface of the sensor's metal electrodes will induce charges that change at the same frequency as the electric field being measured. When a measuring capacitor is connected between the two electrodes of the sensor, the induced voltage generated across the capacitor by the induced charges can also be used as a measurement signal.

[0005] While the technology for fabricating alternating current electric field sensors is currently quite mature, most different types of sensors have inherent limitations. Therefore, it is of great significance to develop miniature electric field sensors that are highly sensitive, have a wide measurement range, excellent performance, low cost, small size, and can be mass-produced. Summary of the Invention

[0006] The technical problem to be solved by the present invention is to provide an electric field sensor based on a chromium telluride resonance structure, so as to solve the technical problems existing in the prior art.

[0007] The technical solution adopted in this invention is as follows: An electric field sensor based on a chromium telluride resonance structure, comprising a chromium telluride layer, a first charge dielectric layer, a second charge dielectric layer, a charge residence region, a fixed support, and a fixed block. The chromium telluride layer is fixedly connected to the fixed block, and the fixed block is fixedly connected to the fixed support. The charge dielectric layer is arranged on the upper surface of the chromium telluride layer.

[0008] Preferably, the charge dielectric layer includes a second charge dielectric layer, a charge residence region, and a first charge dielectric layer arranged sequentially from bottom to top.

[0009] Preferably, the aforementioned fixing block has a square frame structure and is fitted around the chromium telluride layer.

[0010] Preferably, the electric field sensor based on the chromium telluride resonance structure further includes a cooling module, which is installed outside the fixed block.

[0011] Preferably, the aforementioned fixing block is made of bronze.

[0012] Preferably, the electric field sensor based on the chromium telluride resonance structure further includes a locking adjustment mechanism fixedly connected to the bottom of the chromium telluride layer.

[0013] Preferably, the locking adjustment mechanism includes a screw, a fixed connecting plate, a limiting fixing plate, and a locking nut. The fixed connecting plate is fixedly connected to the middle of the bottom side of the chromium telluride layer. The upper end of the screw is fixedly connected to the middle of the bottom layer of the fixed connecting plate, and the lower end passes through the groove provided in the middle of the limiting fixing plate and is locked by the locking nut. The limiting fixing plate is fixedly connected to the fixed support.

[0014] Preferably, a thrust bearing is provided between the locking nut and the groove, and the thrust bearing is movably sleeved on the screw.

[0015] The beneficial effects of this invention are as follows: Compared with the prior art, this invention converts the measurement of the external electric field into the change of the resonant frequency of the chromium telluride layer. The intensity of the external electric field is determined by the change of the resonant frequency of the chromium telluride layer, thereby obtaining the intensity of the external electric field. Since the chromium telluride layer itself has excellent resonant characteristics, the sensitivity and reliability of the electric field sensor are greatly improved. It can also achieve the characteristics of wide measurement range, excellent performance, low cost, small size, and is easy to mass-produce. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the fixed block connection structure of the present invention;

[0017] Figure 2 This is a front cross-sectional structural schematic diagram of the present invention. Detailed Implementation

[0018] The present invention will be further described below with reference to specific embodiments.

[0019] Example 1: As Figure 1-2 As shown, an electric field sensor based on a chromium telluride resonant structure includes a chromium telluride layer 1, a first charge dielectric layer 2, a second charge dielectric layer 3, a charge residence region 4, a fixed support 5, and a fixed block 6. The chromium telluride layer 1 is fixedly connected to the fixed block 6, and the four corners of the fixed block 6 are fixedly connected to the four fixed supports 5, so that the chromium telluride layer 1 is suspended, forming a cavity 7 below. The charge dielectric layer is arranged on the upper surface of the chromium telluride layer 1.

[0020] Preferably, the charge dielectric layer includes a second charge dielectric layer 3, a charge retention region 4 and a first charge dielectric layer 2 arranged sequentially from bottom to top. The charge retention region 4 is the region where charge accumulates between the second charge dielectric layer 3 and the first charge dielectric layer 2. The charge retention region 4 is a spherical cavity formed by setting a large number of two charge dielectric layers.

[0021] Preferably, the fixing block 6 is a square frame structure, fitted around the chromium telluride layer 1, and the fixing block 6 is made of bronze, which has a good heat dissipation effect.

[0022] Preferably, the electric field sensor based on the chromium telluride resonance structure further includes a cooling module 7. The cooling module 7 is installed outside the fixed block 6. The cooling module 7 adopts a heat sink type aluminum alloy structure, and the heat sink is arranged along the circumference of the aluminum alloy structure, which has a good heat dissipation effect.

[0023] Preferably, the electric field sensor based on the chromium telluride resonance structure further includes a locking adjustment mechanism 9 fixedly connected to the bottom of the chromium telluride layer 1. The locking adjustment mechanism 9 is set to stretch the chromium telluride layer. Stretching the chromium telluride layer will increase the fundamental resonance frequency (fundamental frequency) of the chromium telluride layer, thereby improving the sensitivity of the electric field sensor of the present invention.

[0024] Preferably, the locking and adjusting mechanism 9 includes a screw 10, a fixed connecting plate 11, a limiting fixing plate 12, and a locking nut 13. The fixed connecting plate 11 is fixedly connected to the middle of the bottom side of the chromium telluride layer 1. The upper end of the screw 10 is fixedly connected to the middle of the bottom layer of the fixed connecting plate 11, and the lower end passes through the groove 15 provided in the middle of the limiting fixing plate 12 and is locked by the locking nut 13. The limiting fixing plate 12 is fixedly connected to the fixed support 5. The locking nut is used in conjunction with the screw for adjustment, which makes locking convenient and quick. The locking force is also convenient and quick to adjust. The fixed connecting plate 11 is a strip structure that occupies three-quarters of the bottom area of ​​the chromium telluride layer 1, which provides good connection stability and more dispersed force. The groove facilitates a more compact structure and avoids affecting installation.

[0025] Preferably, a thrust bearing 14 is provided between the locking nut 13 and the groove 15. The thrust bearing 14 is movably sleeved on the screw 10. The addition of the thrust bearing allows the screw to mainly bear the tensile force and not bear the torque (or the torque is very small), thereby reducing the rotational torque on the fixed connecting plate, avoiding damage to the chromium telluride layer and reducing the impact of the chromium telluride layer.

[0026] The method for measuring the external electric field is as follows: The measurement of the external electric field is converted into the change of the resonant frequency of the chromium telluride layer. The intensity of the external electric field is determined by the change of the resonant frequency of the chromium telluride layer, thus obtaining the intensity of the external electric field. Since the chromium telluride layer itself has excellent resonant characteristics, the sensitivity and reliability of the electric field sensor are greatly improved.

[0027] During testing, an external electric field acts on the electric field induction structure. The charge dielectric layer senses the external electric field and forms an electric force. The electric force formed by the external electric field can change the resonant frequency of the chromium telluride layer. By monitoring the resonant frequency of the chromium telluride layer, the current resonant frequency of the chromium telluride layer can be obtained. Based on the current resonant frequency and the initial resonant frequency of the chromium telluride layer, the amount of change in the resonant frequency of the chromium telluride layer can be determined. Furthermore, the intensity of the external electric field can be determined based on the amount of change in the resonant frequency of the chromium telluride layer.

[0028] To further improve the sensitivity of the electric field sensor of the present invention, the electric field sensing structure also includes a cooling module. The cooling module is connected to a fixing block for fixing the chromium telluride layer. To improve cold conduction, the fixing block for fixing the chromium telluride layer can be made of materials such as bronze. Since bronze has excellent thermal conductivity, it can quickly reduce the temperature of the chromium telluride layer. The cooling module cools the chromium telluride layer according to the external temperature and reduces the temperature of the chromium telluride layer. It should be noted that the main function of the cooling module is to reduce the temperature of the chromium telluride layer. When the temperature decreases, the quality factor of the resonant system increases, thereby improving the sensitivity of the electric field sensor of the present invention. That is, when the temperature difference between the external temperature and the temperature of the chromium telluride layer increases, the relative frequency shift increases, thereby improving the sensitivity of the electric field sensor of the present invention.

[0029] In use, the electric field sensor of this invention is placed in the external electric field to be measured. The electric field sensor acquires the current resonant frequency of the chromium telluride layer and the external temperature. The cooling module cools the chromium telluride layer according to the external temperature. Cold conduction is achieved through a fixing block connected to the cooling module to fix the chromium telluride layer, thereby reducing the temperature of the chromium telluride layer. This creates a certain temperature difference between the external temperature and the temperature of the chromium telluride layer. As the temperature difference increases, the relative frequency shift also increases, thereby improving the sensitivity of the electric field sensor of this invention. The cooling temperature of the chromium telluride layer can be set according to the actual environment. The change in the resonant frequency of the chromium telluride layer is determined based on the current resonant frequency and the initial resonant frequency of the chromium telluride layer, and the intensity of the external electric field is determined based on the change in the resonant frequency of the chromium telluride layer.

[0030] In summary, the advantages of this invention are as follows:

[0031] 1. The electric field induction structure includes a cooling module, which is connected to a fixing block for fixing the chromium telluride layer. In order to improve the cold conduction, the fixing block for fixing the chromium telluride layer can be made of bronze or the like. Since bronze has very good thermal conductivity, it can quickly reduce the temperature of the chromium telluride layer.

[0032] 2. The main function of the cooling module is to lower the temperature of the chromium telluride layer. When the temperature decreases, the quality factor of the resonant system increases, thereby improving the sensitivity of the electric field sensor of the present invention. That is, when the temperature difference between the external temperature and the temperature of the chromium telluride layer increases, the relative frequency shift increases, thereby improving the sensitivity of the electric field sensor of the present invention.

[0033] 3. In use, the electric field sensor of this invention is placed in the external electric field to be measured. The electric field sensor of this invention acquires the current resonant frequency of the chromium telluride layer and the external temperature. The cooling module cools the chromium telluride layer according to the external temperature. Cold conduction is carried out through the fixing block connected to the cooling module to fix the chromium telluride layer, thereby reducing the temperature of the chromium telluride layer. This creates a certain temperature difference between the external temperature and the temperature of the chromium telluride layer. As the temperature difference increases, the relative frequency shift also increases, thereby improving the sensitivity of the electric field sensor of this invention. The cooling temperature of the chromium telluride layer can be set according to the actual environment. The change in the resonant frequency of the chromium telluride layer is determined based on the current resonant frequency and the initial resonant frequency of the chromium telluride layer, and the intensity of the external electric field is determined based on the change in the resonant frequency of the chromium telluride layer.

[0034] 4. The electric field sensor of the present invention is configured according to actual usage requirements and has good sensitivity and measurement range for measuring external electric fields.

[0035] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of protection of the claims.

Claims

1. An electric field sensor based on a chromium telluride resonance structure, characterized in that: It includes a chromium telluride layer (1), a fixed support (5) and a fixed block (6), the chromium telluride layer (1) is fixedly connected to the fixed block (6), the fixed block (6) is fixedly connected to the fixed support (5), and a charge dielectric layer is arranged on the upper surface of the chromium telluride layer (1); it also includes a cooling module (7), which is installed outside the fixed block (6); It also includes a locking adjustment mechanism (9) fixedly connected to the bottom of the chromium telluride layer (1); the locking adjustment mechanism (9) includes a screw (10), a fixed connecting plate (11), a limiting fixing plate (12) and a locking nut (13). The fixed connecting plate (11) is fixedly connected to the middle of the bottom side of the chromium telluride layer (1). The upper end of the screw (10) is fixedly connected to the middle of the bottom layer of the fixed connecting plate (11). The lower end passes through the groove (15) set in the middle of the limiting fixing plate (12) and is locked by the locking nut (13). The limiting fixing plate (12) is fixedly connected to the fixed support (5).

2. An electric field sensor based on a chromium telluride resonance structure according to claim 1, characterized in that: The charge dielectric layer includes a second charge dielectric layer (3), a charge residence region (4), and a first charge dielectric layer (2) arranged from bottom to top.

3. An electric field sensor based on a chromium telluride resonance structure according to claim 1, characterized in that: The fixing block (6) is a square frame structure, which is fitted around the chromium telluride layer (1).

4. An electric field sensor based on a chromium telluride resonance structure according to claim 2, characterized in that: The fixing block (6) is made of bronze.

5. An electric field sensor based on a chromium telluride resonance structure according to claim 1, characterized in that: A thrust bearing (14) is provided between the locking nut (13) and the groove (15), and the thrust bearing (14) is movably sleeved on the screw (10).

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