A light-emitting diode

Abstract

The present application provides a light-emitting diode, comprising a semiconductor stack, a through hole provided on the semiconductor stack, and a first insulating layer, and a first pad and a second pad provided on the first insulating layer. The semiconductor stack comprises a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The first insulating layer comprises a first opening and a second opening. The first pad is electrically connected to the first semiconductor layer via the first opening, and the second pad is electrically connected to the second semiconductor layer via the second opening. The second opening, projected between the first pad and the second pad, is utilized to expand the current injection area, thereby enhancing the current expansion capability and the ability to withstand high current drive. At the same time, the current transmission path can be reduced during current injection, thereby achieving the purpose of reducing the current congestion effect.

Description

Technical Field

[0001] The present application relates to the technical field related to semiconductor manufacturing, and in particular to a light emitting diode. Background Art

[0002] Light-emitting diodes (LEDs) are widely used in automotive, backlighting, horticultural lighting, and high-power lighting applications due to their low cost, high light efficiency, and energy-saving and environmentally friendly characteristics. Due to their high drive current, strict heat dissipation requirements, low chip internal resistance, and high reflectivity in the yellow and red wavelengths, Ag, a metal with the highest reflectivity, is often used as the primary material for the metal reflective layer.

[0003] Traditional LED chips are non-flattened in design. Since the surface pads are in contact with the insulating layer over a large area, during the subsequent packaging reflow process, the surface pads and the insulating layer are prone to breakage or separation due to the warping of the packaging substrate, which in turn causes metal layers of different polarities to be connected to each other and cause local short circuits. The solution to the existing technology is to flatten the LED chip design, that is, to separate the P electrode and the N electrode, set a through hole extending from the P-type layer to the N-type layer at a local position of the epitaxial structure, and set the surface pads of the P electrode and the N electrode on the same horizontal plane, thereby avoiding the warping of the substrate causing the insulation layer to break, resulting in leakage or dead light. However, in order to meet the flattening design requirements, the annular design of the P electrode current injection method will hinder the expansion of the current and cause a current congestion effect. At the same time, in order to ensure the flatness of the surface pad, the surface pad will avoid the through hole, thereby compressing the area of ​​the surface pad, which will directly affect the heat dissipation capacity and the ability to withstand high current drive of the LED chip.

[0004] Therefore, how to provide a light-emitting diode that can improve the expansion capability of the light-emitting diode current and reduce the congestion effect on the basis of meeting the surface flatness, and at the same time, further improve the heat dissipation capacity of the light-emitting diode to meet a larger driving current has become an urgent problem to be solved in this field. Summary of the Invention

[0005] The purpose of this application is to provide a light-emitting diode that can improve the expansion capability of the light-emitting diode current and reduce the congestion effect on the basis of meeting the surface flattening requirement. At the same time, it can further improve the heat dissipation capacity of the light-emitting diode to meet a larger driving current.

[0006] In a first aspect, the present application provides a light emitting diode, comprising:

[0007] A semiconductor stack, comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence;

[0008] a through hole, penetrating the second semiconductor layer and the light-emitting layer, exposing a portion of the surface of the first semiconductor layer;

[0009] a first insulating layer, disposed on the semiconductor stack, having a first opening and a second opening, wherein the first opening exposes a portion of the surface of the first semiconductor layer;

[0010] a first pad formed on the semiconductor stack and electrically connected to the first semiconductor layer through the first opening, wherein a projection of the first pad does not overlap with a projection of the through hole on a plane perpendicular to a direction of the semiconductor stack;

[0011] a second pad formed on the semiconductor stack and electrically connected to the second semiconductor layer through the second opening, wherein a projection of the second pad does not overlap with a projection of the through hole on a plane perpendicular to a direction of the semiconductor stack;

[0012] The first pad includes a first pad connection portion and a plurality of first pad extension portions extending toward the second pad, the second pad includes a second pad connection portion and a plurality of second pad extension portions extending toward the first pad, and on a plane perpendicular to the direction of the semiconductor stacking, the projection of the second opening portion is located between the projection of the first pad extension portion and the projection of the second pad extension portion.

[0013] In a possible implementation, the light emitting diode further includes a first connecting electrode and a second connecting electrode, the first connecting electrode being electrically connected to the first semiconductor layer through the first opening, and the second connecting electrode being electrically connected to the second semiconductor layer through the second opening.

[0014] In a possible embodiment, the second connecting electrode includes a second electrode connecting portion and a plurality of second electrode extension portions extending toward the first pad, and on a plane perpendicular to the direction of the semiconductor stack, a projection surface of the second opening portion is located within a projection surface of the second electrode extension portion.

[0015] In a possible implementation, the through hole distribution direction includes a first direction and a second direction, the first direction is the same as an extension direction of the first pad connecting portion, and the second direction is the same as an extension direction of the first pad extending portion.

[0016] In a possible implementation, the through holes form a plurality of first auxiliary lines in the first direction and a plurality of second auxiliary lines in the second direction, and the second openings are staggered with the first auxiliary lines and the second auxiliary lines, respectively.

[0017] In a possible implementation manner, the through hole in the second direction is located between the second pad extensions.

[0018] In a possible implementation manner, the number of the second openings is the same as the number of the second pad extensions.

[0019] In one possible embodiment, the light-emitting diode further includes a second insulating layer, which is formed on the first connecting electrode and the second connecting electrode. The second insulating layer includes a third opening portion to expose a portion of the surface of the first connecting electrode and a fourth opening portion to expose a portion of the surface of the second connecting electrode. On a plane perpendicular to the direction of the semiconductor stack, the projection of the third opening portion is located within the projection of the first connecting electrode, and the projection of the fourth opening portion is located within the projection of the second connecting electrode.

[0020] In a possible implementation manner, the width of the first pad extension is greater than the width of the second pad extension.

[0021] In a possible implementation, on a plane perpendicular to the direction of the semiconductor stack, a projection plane of the first opening is located within a projection plane of the through hole.

[0022] In a possible embodiment, the light-emitting diode further includes a reflective layer and a blocking layer, the reflective layer is arranged on the second semiconductor layer, the blocking layer covers the reflective layer, the first insulating layer covers the blocking layer, and partially exposes the blocking layer at the second opening, and the second connecting electrode is electrically connected to the blocking layer through the second opening.

[0023] In a possible implementation, the reflective layer includes a silver metal reflective layer.

[0024] In a possible implementation, the light emitting diode further includes a transparent conductive layer, wherein the transparent conductive layer is located between the second semiconductor layer and the reflective layer, and the transparent conductive layer, the reflective layer, and the conductive layer all avoid the through hole.

[0025] In a second aspect, the present application further provides a light emitting diode, comprising:

[0026] A semiconductor stack, comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence;

[0027] a through hole passing through the second semiconductor layer and the light-emitting layer to expose a portion of the surface of the first semiconductor layer;

[0028] a metal layer formed on the second semiconductor layer;

[0029] a first insulating layer formed on the semiconductor stack, comprising a first opening and a second opening, wherein the first opening exposes a portion of the surface of the first semiconductor layer, and the second opening exposes a portion of the surface of the metal layer;

[0030] a first connecting electrode formed on the first insulating layer and contacting the first semiconductor layer through the first opening;

[0031] a second connecting electrode formed on the first insulating layer and contacting the metal layer through the second opening;

[0032] a second insulating layer formed on the first connecting electrode and the second connecting electrode, comprising a third opening and a fourth opening;

[0033] a first pad located in the third opening and electrically contacting the first semiconductor layer, the first pad comprising a first pad connecting portion and a plurality of first pad extending portions extending toward the second pad;

[0034] a second pad formed on the semiconductor stack and located within the fourth opening, the second pad electrically contacting the second semiconductor layer through the second opening; the second pad comprising a second pad connecting portion and a plurality of second pad extensions extending toward the first pad, wherein a projection of the second opening is located between a projection of the first pad extension and a projection of the second pad extension on a plane perpendicular to a direction of the semiconductor stack;

[0035] In which, on a plane perpendicular to the direction of the semiconductor stacking, the projections of the first pad and the second pad do not overlap with the projections of the first opening and the second opening respectively, and the projection of the second opening is located within the projection of the second connecting electrode.

[0036] In one possible embodiment, the second pad includes a second pad connecting portion and a plurality of second pad extensions extending toward the first pad, the projection of the second pad extensions is located within the projection of the second connecting electrode, and the projection of the second opening does not overlap with the projection of the second pad extensions.

[0037] In a possible implementation manner, the first pad and the second pad have the same minimum distance from the center line of the light-emitting diode.

[0038] In a possible implementation manner, the distance between the first pad and the second pad is not less than 150 μm.

[0039] In one possible embodiment, there is a first distance between the first pad and the opening edge of the third opening portion, and the range of the first distance is between 5μm and 20μm; there is a second distance between the second pad and the opening edge of the fourth opening portion, and the range of the second distance is between 5μm and 20μm.

[0040] In a possible embodiment, the proportion of the projected area of ​​the first pad to the projected area of ​​the third opening is between 90% and 100%; the proportion of the projected area of ​​the second pad to the projected area of ​​the fourth opening is between 90% and 100%.

[0041] In a third aspect, the present application further provides a light emitting diode, comprising:

[0042] A semiconductor stack, comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence;

[0043] a through hole passing through the second semiconductor layer and the light-emitting layer to expose a portion of the surface of the first semiconductor layer;

[0044] a metal layer formed on the second semiconductor layer;

[0045] a first insulating layer formed on the semiconductor stack, comprising a first opening and a second opening, wherein the first opening exposes a portion of the surface of the first semiconductor layer, and the second opening exposes a portion of the surface of the metal layer;

[0046] a first connecting electrode formed on the first insulating layer and contacting the first semiconductor layer through the first opening;

[0047] a second connecting electrode formed on the first insulating layer and contacting the metal layer through the second opening;

[0048] The first connecting electrode includes a first electrode connecting portion and a plurality of first electrode extending portions extending toward the second connecting electrode, and the first electrode extending portions are staggered with the second opening portions.

[0049] a first pad electrically connected to the first semiconductor layer, comprising a first pad connecting portion and a plurality of first pad extending portions extending toward the second pad;

[0050] A second pad is electrically connected to the second semiconductor layer through the second opening, and includes a second pad connecting portion and a plurality of second pad extension portions extending toward the first pad. On a plane perpendicular to the direction of the semiconductor stacking, the projection of the second opening portion is located between the projection of the first pad extension portion and the projection of the second pad extension portion.

[0051] In a possible implementation, the second connecting electrode includes a second electrode connecting portion and a plurality of second electrode extending portions extending toward the first connecting electrode, and the first electrode extending portions are staggered with the second electrode extending portions.

[0052] In a possible implementation manner, the width of the first electrode extension portion is smaller than the width of the second electrode extension portion.

[0053] In a possible implementation manner, the second connecting electrode fills the second opening, and an edge of the second connecting electrode is located on the upper surface of the first insulating layer.

[0054] In a fourth aspect, the present application further provides a light emitting diode, comprising:

[0055] A semiconductor stack, comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence;

[0056] a through hole passing through the second semiconductor layer and the light-emitting layer to expose a portion of the surface of the first semiconductor layer;

[0057] a first insulating layer, disposed on the semiconductor stack, comprising a first opening and a second opening, wherein the first opening penetrates the first insulating layer to expose the first semiconductor layer, and the second opening is located on the second semiconductor layer, wherein a vertical projection of a plurality of spaced-apart second openings on the semiconductor stack covers a center line of the light-emitting diode;

[0058] a first connecting electrode located on the first insulating layer and contacting the first semiconductor layer through the first opening;

[0059] a second connecting electrode located on the first insulating layer and filling the second opening to be electrically connected to the second semiconductor layer; the first connecting electrode and the second connecting electrode are separated by a ring-shaped fifth opening;

[0060] a first pad formed on the semiconductor stack and electrically connected to the first semiconductor layer through the first opening, the first pad comprising a first pad connecting portion and a plurality of first pad extending portions extending toward the second pad, wherein a projection of the first pad does not overlap with a projection of the through hole on a plane perpendicular to a direction of the semiconductor stack;

[0061] A second solder pad is formed on the semiconductor stack and is electrically connected to the second semiconductor layer through the second opening. The second solder pad includes a second solder pad connecting portion and a plurality of second solder pad extensions extending toward the first solder pad. On a plane perpendicular to the direction of the semiconductor stack, the projection of the second opening is located between the projection of the first solder pad extension and the projection of the second solder pad extension, and the projection of the second solder pad does not overlap with the projection of the through hole.

[0062] In a possible implementation manner, an opening range of the second opening portion at least covers a center position of the light emitting diode.

[0063] In a possible embodiment, the light-emitting diode further includes a second insulating layer, which is arranged on the first connecting electrode and the second connecting electrode, and includes a third opening portion and a fourth opening portion, the third opening portion is located on the first connecting electrode, and the fourth opening portion is located on the second connecting electrode.

[0064] In a possible implementation manner, the second insulating layer fills the fifth opening.

[0065] In a possible implementation manner, the fifth opening is a continuous annular opening, and the distance between the first connecting electrode and the second connecting electrode is not less than 20 μm.

[0066] Compared with the prior art, the present invention has at least the following advantages:

[0067] The present application provides a light-emitting diode, comprising a semiconductor stack, a through hole provided on the semiconductor stack, and a first insulating layer, and a first pad and a second pad provided on the first insulating layer. The semiconductor stack comprises a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The first insulating layer comprises a first opening and a second opening. The first pad is electrically connected to the first semiconductor layer via the first opening, and the second pad is electrically connected to the second semiconductor layer via the second opening. The second opening, whose projection is located between the extension of the first pad and the extension of the second pad, is utilized to expand the current injection area, thereby enhancing the current expansion capability and the ability to withstand high current drive. At the same time, the current transmission path can be reduced during current injection, thereby achieving the purpose of reducing the current congestion effect.

[0068] The present application provides a light-emitting diode, the opening range of which the second opening also covers the center position of the light-emitting diode, and the second connecting electrode formed subsequently also covers the center position of the light-emitting diode, so that the second opening at the center position of the light-emitting diode can not only be used for current injection, but also serve as an anti-thrust area, further improving the layout utilization area of ​​the light-emitting diode.

[0069] The present application provides a light-emitting diode, which further reduces the spacing between the first soldering pad and the second soldering pad by controlling the minimum spacing between the first soldering pad and the second soldering pad to 150 μm and keeping the distance from the center line of the light-emitting diode equal. This is equivalent to expanding the overall area of ​​the first soldering pad and the second soldering pad on the light-emitting diode, thereby improving the heat dissipation capacity of the contact surface between the light-emitting diode and the packaging substrate, as well as the light-emitting diode's ability to withstand high current driving. BRIEF DESCRIPTION OF THE DRAWINGS

[0070] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0071] Figure 1 Schematic diagram of a top view of a light emitting diode according to an embodiment of the present application.

[0072] Figure 2 According to the embodiment of the present application Figure 1 Schematic diagram of the cross-sectional structure taken along the interception line AA.

[0073] Figure 3 According to the embodiment of the present application Figure 1 Enlarged schematic diagram of part B in the middle.

[0074] Figures 4 to 18 The figure is a structural schematic diagram of a light emitting diode manufacturing process according to an embodiment of the present application.

[0075] Illustration:

[0076] 100 semiconductor substrate; 110 semiconductor stack; 110a through hole; 111 first semiconductor layer; 112 light emitting layer; 113 second semiconductor layer; 120 first insulating layer; 131 first connecting electrode; 1311 first electrode connecting portion; 1312 first electrode extension; 132 second connecting electrode; 1321 second electrode connecting portion; 1322 second electrode extension; 141 first solder pad, 1411 first solder pad connecting portion; 1412 first solder pad extension; 142 second solder pad; 1421 second solder pad connecting portion; 1422 second solder pad extension; 150 transparent conductive layer; 160 reflective layer; 170 blocking layer; 180 second insulating layer; OP1 first opening; OP2 second opening; OP3 third opening; OP4 fourth opening; OP5 fifth opening. DETAILED DESCRIPTION

[0077] The following describes the implementation of the present application through specific embodiments. Those skilled in the art will readily understand the other advantages and benefits of the present application from the disclosure herein. The present application may also be implemented or operated through various other specific implementations, and the details of the present application may be modified or altered based on different viewpoints and applications without departing from the spirit of the present application.

[0078] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be internal communication between two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances. In addition, the terms "first" and "second" are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0079] According to one aspect of the present application, a light emitting diode is provided. Figures 1 to 3 , Figure 1 is a schematic diagram of a top view of a light emitting diode provided in an embodiment of the present application, Figure 2 It is along Figure 1 The schematic diagram of the cross-sectional structure taken along the interception line AA is shown in FIG. Figure 3 for Figure 1 Schematic diagram of the enlarged structure of part B in the middle.

[0080] The light-emitting diode provided in the embodiment of the present application includes: a semiconductor substrate 100, a semiconductor stack 110 arranged on the semiconductor substrate 100, a through hole 110a and a first insulating layer 120 arranged on the semiconductor stack 110, and a first pad 141 and a second pad 142 arranged on the first insulating layer 120.

[0081] The semiconductor stack 110 includes a first semiconductor layer 111, a light-emitting layer 112, and a second semiconductor layer 113 stacked in sequence from bottom to top. The through hole 110a extends downward from the surface of a preset position of the second semiconductor layer 113 and penetrates the second semiconductor layer 113 and the light-emitting layer 112 until a hole structure is exposed on a portion of the surface of the first semiconductor layer 111.

[0082] The first insulating layer 120 is disposed on the upper surface of the semiconductor stack 110, along the edge steps of the semiconductor stack 110, and on a portion of the surface of the semiconductor substrate 100 adjacent to the semiconductor stack 110. The first insulating layer 120 is also formed on the sidewalls of the through hole 110a. The first insulating layer 120 includes a first opening OP1 and a second opening OP2. The first opening OP1 is located at the center of the through hole 110a and exposes a portion of the surface of the first semiconductor layer 111.

[0083] The first solder pad 141 and the second solder pad 142 are respectively formed on the semiconductor stack 110. The first solder pad 141 is electrically connected to the first semiconductor layer 111 through the first opening OP1, and the second solder pad 142 is electrically connected to the second semiconductor layer 112 through the second opening OP2. On a plane perpendicular to the direction of the semiconductor stack 110, the projections of the first solder pad 141 and the second solder pad 142 do not overlap with the projection of the through hole 110a, thereby flattening the surface of the light-emitting diode, which is beneficial to increase the bonding area between the packaging substrate and the first solder pad 141 and the second solder pad 142 in the subsequent packaging process.

[0084] Among them, the first solder pad 141 also includes a first solder pad connection portion 1411 and a plurality of first solder pad extension portions 1412 extending toward the second solder pad 142. The second solder pad 142 also includes a second solder pad connection portion 1421 and a plurality of second solder pad extension portions 1422 extending toward the first solder pad 141. On a plane perpendicular to the direction of the semiconductor stack 110, the projection of the second opening portion OP2 is located between the projection of the first solder pad extension portion 1412 and the projection of the second solder pad extension portion 1422. The second solder pad 142 is electrically connected to the second semiconductor layer 112 through the second opening portion OP2 to expand the current injection area, enhance the current expansion capability and the ability to withstand large current driving, and reduce the current congestion effect. The second opening portion OP2 is set between the first solder pad 141 and the second solder pad 142, which can effectively reduce the current transmission path during current injection and further reduce the current congestion effect.

[0085] In one embodiment, the semiconductor substrate 100 serves as the growth base of the epitaxial layer 110, and a conductive material, an insulating material, or a light-transmitting material with excellent thermal conductivity can be used, such as any one of a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate, a zinc oxide substrate, a silicon substrate, a gallium arsenide substrate, or a gallium phosphide substrate. Among them, a sapphire substrate is the preferred substrate material for the growth of the epitaxial layer 110.

[0086] Preferably, the semiconductor substrate 100 can be removed by a separation process in a subsequent process, for example, by using a laser lift-off (LLO) method or a chemical lift-off (CLO) method.

[0087] See also Figure 2In one embodiment, the semiconductor stack 110 can be formed on the semiconductor substrate 100 using methods including metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), etc. The first semiconductor layer 111, the light emitting layer 112, and the second semiconductor layer 113 include compound semiconductors of the Group III gallium nitride series, such as GaN, AlN, InGaN, AlGaN, InAlGaN, or at least one of these groups. The first semiconductor layer 111 is connected to the semiconductor substrate 100 and can be a semiconductor layer doped with an N-type dopant, such as Si, Ge, Se, Te, or C, which is used to provide electrons. The second semiconductor layer 113 can be a semiconductor layer doped with a P-type dopant, such as Mg, Zn, Be, Ca, Sr, or Ba, which is used to provide holes. The light-emitting layer 112 is located between the first semiconductor layer 111 and the second semiconductor layer 113. It is a layer that recombines the electrons provided by the first semiconductor layer 111 and the holes provided by the second semiconductor layer 113 and outputs light of a constant wavelength. It can be composed of alternatingly stacked potential well layers and barrier layers, or a semiconductor film with a multi-layer quantum well structure.

[0088] When no voltage is applied to the light-emitting diode, a PN junction with a high potential barrier is formed between the first semiconductor layer 111 and the second semiconductor layer 113. This barrier can prevent electrons in the first semiconductor layer 111 from diffusing into the second semiconductor layer 113, and similarly prevent holes in the second semiconductor layer 113 from diffusing into the first semiconductor layer 111. When a forward bias voltage, i.e., an operating voltage, is applied to the light-emitting diode, the potential barrier of the PN junction formed by the first semiconductor layer 111 and the second semiconductor layer 113 decreases, allowing electrons in the first semiconductor layer 111 and holes in the second semiconductor layer 113 to migrate and diffuse toward each other. The electrons and holes recombine in the light-emitting layer 112 and release energy in the form of light energy, thereby achieving light emission of the light-emitting diode.

[0089] See also Figure 4 and Figure 5 In one embodiment, the number of through holes 110a includes multiple shapes, including but not limited to polygons such as circles, rectangles, or hexagons, and can be distributed with uniform or non-uniform spacing. In this embodiment, the through holes 110a are circular in shape and are distributed in parallel with a constant spacing on the light-emitting diode. When power is applied, the external current is electrically connected to the first semiconductor layer 111 through the first connection electrode 131 in the through holes 110a. The multiple evenly distributed through holes 110a can improve the current expansion capability and the uniformity of the current distribution, while also increasing the contact area between the first connection electrode 131 and the first semiconductor layer 111, thereby reducing the voltage and improving the luminous efficiency of the light-emitting diode.

[0090] See also Figure 1 and Figure 4 Preferably, the distribution direction of the through holes 110a includes a first direction and a second direction, the first direction being the extension direction of the first pad connecting portion 1411, that is, Figure 4 The second direction is the extension direction of the first pad extension portion 1412, that is, Figure 4 The second opening OP2 is located between the plurality of first auxiliary lines formed by the through hole 110a in the first direction and the plurality of auxiliary lines formed in the second direction, and does not intersect any of the first auxiliary lines or the second auxiliary lines. It should be noted that the definition of the X and Y directions is only for convenience of description and does not limit the arrangement orientation of the first pad connecting portion 1411 and the first pad extending portion 1412.

[0091] Preferably, the through hole 110 a located in the second direction is located between the plurality of second pad extensions 1422 .

[0092] See also Figure 6 Figure 7 In one embodiment, the light-emitting diode further includes a transparent conductive layer 150. The transparent conductive layer 150 is formed on the second semiconductor layer 113 by physical vapor deposition or chemical vapor deposition, forming an ohmic contact with the second semiconductor layer 113 and configured to disperse and transmit externally injected current horizontally to the surface of the second semiconductor layer 113 in contact therewith. The transparent conductive layer 150 has excellent light transmittance, and the light emitted by the light-emitting layer 112 substantially does not cause energy loss when passing through the transparent conductive layer 150. The transparent conductive layer 150 may include indium tin oxide, zinc indium tin oxide, zinc tin oxide, gallium indium tin oxide, indium gallium oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, and the like.

[0093] Preferably, the transparent conductive layer 150 is located within the vertical projection of the second semiconductor layer 113 and has a vertical projection area of ​​between 80% and 95% relative to the second semiconductor layer 113, nearly covering the entire second semiconductor layer 113. Increasing the contact area between the transparent conductive layer 150 and the second semiconductor layer 113 allows for more uniform transfer of externally injected current to the entire second semiconductor layer 113 of the light-emitting diode, thereby further reducing the voltage. The transparent conductive layer 150 is located within the vertical projection of the second semiconductor layer 113, which means that the coverage of the transparent conductive layer 150 does not extend into the through-hole 110a or the edge step of the semiconductor stack 110, thereby avoiding the risk of short circuits caused by direct contact between the first semiconductor layer 111 and the second semiconductor layer 113.

[0094] See also Figures 8 to 11In one embodiment, the light-emitting diode further includes a metal layer composed of a stacked reflective layer 160 and a barrier layer 170. The reflective layer 160 is disposed on the transparent conductive layer 150 and reflects light, further improving the light extraction efficiency of the light-emitting diode. The reflective layer 160 forms an ohmic contact with the transparent conductive layer 150, diffusing current through the transparent conductive layer 150 to the second semiconductor layer 113. The barrier layer 170 is disposed on the reflective layer 160 and covers the edge of the reflective layer 160 to prevent oxidation of the reflective layer 160 surface, which may cause degradation of the reflectivity of the reflective layer 160. At the same time, the barrier layer 170 can also block ion migration in the reflective layer 160. The edge of the reflective layer 160 can be disposed outside or inside the edge of the transparent conductive layer 150, or overlap with the edge of the transparent conductive layer 150.

[0095] Preferably, the reflective layer 160 is located within the vertical projection of the transparent conductive layer 150, that is, the edge of the reflective layer 160 is located within the transparent conductive layer 150, thereby further increasing the contact area between the transparent conductive layer 150 and the second semiconductor layer 113, thereby reducing the voltage. The barrier layer 170 covers the edge of the reflective layer 160 and is also located within the vertical projection of the transparent conductive layer 150. In other words, the transparent conductive layer 150, the reflective layer 160, and the barrier layer 170 are all located within the vertical projection of the second semiconductor layer 113, avoiding the location of the through hole 110a. The reflective layer 160 and the barrier layer 170 are composed of a metal material. The reflective layer 160 material may include one or more combinations of metals such as Ag, Al, Ti, W, Ni, etc., and has the property of reflecting light. The light reflectivity of the reflective layer 140 is as high as over 90%. Preferably, the reflective layer 160 is formed of metallic silver. The material of the barrier layer 170 includes one or more metals selected from the group consisting of Cr, Ti, Ni, Au, Al, Pt, etc., and has the property of blocking ion migration and diffusion.

[0096] Specifically, when silver metal is used as the material for the reflective layer 160 and electricity is applied, the silver metal reflective layer 160 may undergo ion migration due to factors such as heat or electricity. The silver ions that migrate in a disordered or ordered state may diffuse into the interior of the semiconductor stack 110, causing local leakage, which in turn leads to failure of the light-emitting diode. Furthermore, the silver metal reflective layer 160 is also susceptible to corrosion and oxidation by water vapor, resulting in degradation of the reflectivity of the reflective layer 160. Therefore, a barrier layer 170 is required to cover the surface and edges of the reflective layer 160 to protect the reflective layer 160. In other words, the conductive combination of the transparent conductive layer 150, the reflective layer 160, and the barrier layer 170 can effectively prevent the diffusion of silver ions into the light-emitting diode, while also utilizing the excellent conductivity of silver metal to reduce the voltage drop across the transparent conductive layer 150. Furthermore, the high reflectivity of silver metal can be utilized to improve the light extraction efficiency of the light-emitting diode.

[0097] See also Figure 12 and Figure 13 In one embodiment, the first insulating layer 120 is formed on the blocking layer 170 and covers the edge steps and the through hole 110a of the semiconductor stack 110, and then the first insulating layer 120 is patterned to form the first opening OP1 and the second opening OP2 by photolithography and etching.

[0098] There are multiple first openings OP1, each corresponding to one of the through holes 110a and concentrically disposed. The first openings OP1 vertically penetrate the first insulating layer 120 to expose a portion of the surface of the first semiconductor layer 111, providing a path for the subsequently formed first connection electrode 131 to electrically connect to the first semiconductor layer 111.

[0099] Preferably, the projection of the first opening OP1 lies within the projection of the through-hole 110a on a plane perpendicular to the semiconductor stack 110. In other words, the opening area of ​​the through-hole 110a must be larger than the opening area of ​​the first opening OP1. This ensures that the subsequently formed connecting electrode 130 is electrically connected only to the bottom first semiconductor layer 111, while being electrically isolated from the other conductive layers by the first insulating layer 120. The other conductive layers include the second semiconductor layer 113, the transparent conductive layer 150, the reflective layer 160, and the barrier layer 170.

[0100] In another embodiment, the vertical projections of the plurality of spaced-apart second openings OP2 on the semiconductor stack 110 overlap the centerline of the LED. The plurality of second openings OP2 are spaced-apart along the first direction, and when the projections of the second openings OP2 overlap the centerline of the LED, the current transmission path can be reduced during current injection, thereby reducing current congestion. The number of second openings OP2 is the same as the number of second pad extensions 1422.

[0101] Preferably, the sizes of the plurality of second openings OP2 may be the same or different, and their lengths along the first direction may range from 120 μm to 145 μm, and their widths along the second direction may range from 80 μm to 100 μm. For example, in the present embodiment, the number of second openings OP2 is 5, all of which are square openings when viewed from above, and all have a width in the second direction of 91 μm. The horizontal spacing of adjacent edges of adjacent second openings OP2 along the first direction is 138 μm. The horizontal length of the two second openings OP2 arranged near the edge of the light-emitting diode is 127 μm, and the horizontal length of the three second openings OP2 arranged in the middle is 142 μm. This application does not make any specific restrictions on the shape, number, and size of the second openings OP2, and those skilled in the art can flexibly adjust them according to the line width between the various structures of the light-emitting diode.

[0102] Preferably, the opening of the second opening OP2 should also cover the center of the LED. Once the connecting electrode 130 covers the second opening OP2, the second opening OP2 located in the center of the LED can be used for current injection and also serve as a pin-proof area, further improving the LED layout efficiency. Because the electrical properties of the pins are consistent with those of the second connecting electrode 132, there is no risk of leakage when the pins come into contact with the second connecting electrode 132 within the second opening OP2.

[0103] See also Figure 14 and Figure 15 In one embodiment, the first connection electrode 131 is located on the first insulating layer 120 and fills the first opening portion OP1 to be electrically connected to the first semiconductor layer 111. The second connection electrode 132 is located on the first insulating layer 120 and fills the second opening portion OP2 to be electrically connected to the second semiconductor layer 113. In addition, the first connection electrode 131 and the second connection electrode 132 are separated by the annular fifth opening portion OP5, and a portion of the surface of the first insulating layer 120 is exposed to insulate the first connection electrode 131 and the second connection electrode 132 from each other.

[0104] Preferably, the first connection electrode 131 includes a first electrode connection portion 1311 and a plurality of first electrode extensions 1312 extending in the second direction, and the second connection electrode 132 includes a second electrode connection portion 1321 and a plurality of second electrode extensions 1322 extending in the second direction. On a plane perpendicular to the direction of the semiconductor stack, the projection of the second opening OP2 is located within the projection of the second electrode extensions 1322, thereby enabling the second connection electrode 132 to fill the second opening OP2 and electrically connect to the second semiconductor layer 113. Furthermore, the edges of the second electrode extensions 1322 also cover a portion of the upper surface of the first insulating layer 120.

[0105] Preferably, the first electrode extension portion 1312 and the second electrode extension portion 1322 are staggered, and the width of the first electrode extension portion 1312 is smaller than the width of the second electrode extension portion 1322, so that the second electrode extension portion 1322 can avoid the position of the through hole 110a, and the upper surfaces of the first connecting electrode 131 and the second connecting electrode 132 are flat surfaces.

[0106] Preferably, the first connection electrode 131 and the second connection electrode 132 may be a single layer or a stacked layer structure, and may include a conductive metal material or alloy material such as Au, Ti, Ni, Al, Ag, Gr, or Pt. The minimum spacing between the first connection electrode 131 and the second connection electrode 132 is not less than 20 μm, that is, the minimum opening width of the fifth opening OP5 is not less than 20 μm.

[0107] See also Figure 16 and Figure 17 In one embodiment, the light-emitting diode further includes a second insulating layer 180. The second insulating layer 180 is formed on the first connecting electrode 131 and the second connecting electrode 132. The second insulating layer 180 is patterned by photolithography and etching to form a third opening OP3 and a fourth opening OP4. The third opening OP3 is located on the first connecting electrode 131 and exposes a portion of the surface of the first connecting electrode 131. The fourth opening OP4 is located on the second connecting electrode 132 and exposes a portion of the surface of the second connecting electrode 132. The third opening OP3 and the fourth opening OP4 provide channels for the light-emitting diode to achieve electrical connection with the outside world. The larger the opening range of the third opening OP3 and the fourth opening OP4, the more conducive it is to improving the heat dissipation performance of the light-emitting diode.

[0108] Preferably, on a plane perpendicular to the semiconductor stack 110 , the projection of the third opening OP3 is located within the projection of the first connection electrode 131 , and the projection of the fourth opening OP4 is located within the projection of the second connection electrode 132 .

[0109] Preferably, the second insulating layer 180 covers the through hole 110a and fills the fifth opening OP5, further electrically isolating the first connection electrode 131 from the second connection electrode 132. Furthermore, the second insulating layer 180 extends to cover the edge step of the semiconductor stack 110 to protect the first connection electrode 131 located at the edge step of the semiconductor stack 110.

[0110] See also Figure 18 In one embodiment, the projections of the first and second solder pads 141, 142 on a plane perpendicular to the semiconductor stack 110 do not overlap with the projections of the first and second openings OP1, OP2, or the projections of the first and second solder pads 141, 142 on a plane perpendicular to the semiconductor stack 110 do not overlap with the projections of the through-hole 110a. This prevents shorting between the first solder pad 141 and the second connection electrode 132, or between the second solder pad 142 and the first connection electrode 131. Furthermore, the fact that the first and second solder pads 141, 142 do not overlap with the projections of the first and second openings OP1, OP2, and through-hole 110a further improves the surface flatness of the first and second solder pads 141, 142, thereby reducing the void ratio and increasing the reliability of the light-emitting diode during the subsequent packaging process.

[0111] Preferably, a first distance is defined between the first solder pad 141 and the edge of the third opening OP3, with the first distance ranging from 5 μm to 20 μm. A second distance is defined between the second solder pad 142 and the edge of the fourth opening OP4, with the second distance ranging from 5 μm to 20 μm. Limiting the range of the first and second distances is intended to further increase the area ratio of the first and second solder pads 141, 142 on the LED, thereby increasing the bonding area between the first and second solder pads 141, 142 and the packaging substrate during subsequent LED packaging, thereby improving heat dissipation performance.

[0112] Preferably, the vertical projection area of ​​the first pad 141 accounts for 90% to 100% of the vertical projection area of ​​the third opening OP3, and the vertical projection area of ​​the second pad 142 accounts for 90% to 100% of the vertical projection area of ​​the fourth opening OP4.

[0113] Preferably, the first and second pads 141, 142 are equidistant from the centerline of the LED, and the spacing between the first and second pads 141, 142 is no less than 150 μm. Reducing the spacing between the first and second pads 141, 142 further increases the overall area of ​​the first and second pads 141, 142 on the LED, thereby improving the heat dissipation capability of the LED at the interface with the package substrate, as well as the LED's ability to withstand high current driving.

[0114] Preferably, the first pad 141 and the second pad 142 may be composed of a single layer or multiple layers, and may include conductive metal materials such as Au, Ti, Ni, Al, Ag, Gr, and Pt.

[0115] The present application provides a light-emitting diode (LED) comprising a semiconductor stack 110, a through hole 110a provided on the semiconductor stack 110, a first insulating layer 120, and first and second pads 141 and 142 provided on the first insulating layer 120. The semiconductor stack 110 comprises a first semiconductor layer 111, a light-emitting layer 112, and a second semiconductor layer 113. The first insulating layer 120 comprises a first opening OP1 and a second opening OP2. The first pad 141 is electrically connected to the first semiconductor layer 111 via the first opening OP1, and the first pad 142 is electrically connected to the second semiconductor layer 113 via the second opening OP2. The second opening, whose projection is located between the projections of the first and second pad extensions 1412 and 1422, expands the current injection area, enhances current spreading capability, and increases the ability to withstand high-current driving. Furthermore, the current transmission path is reduced during current injection, thereby reducing current congestion.

[0116] The present application provides a light-emitting diode, the opening range of which the second opening portion OP2 also covers the center position of the light-emitting diode, and the second connecting electrode 132 formed subsequently also covers the center position of the light-emitting diode, so that the second opening portion OP2 at the center position of the light-emitting diode can not only be used for current injection, but also serve as an anti-push area, further improving the layout utilization area of ​​the light-emitting diode.

[0117] The present application provides a light-emitting diode, which further reduces the spacing between the first solder pad 141 and the second solder pad 142 by controlling the minimum spacing between the first solder pad 141 and the second solder pad 142 to 150 μm and keeping them at the same distance from the center line of the light-emitting diode. This is equivalent to expanding the overall area of ​​the first solder pad 141 and the second solder pad 142 on the light-emitting diode, thereby improving the heat dissipation capacity of the contact surface between the light-emitting diode and the packaging substrate, as well as the light-emitting diode's ability to withstand high current driving.

[0118] In addition to the above embodiments, the light-emitting diodes provided in this application can also be used in fields including but not limited to ordinary indoor lighting, automotive lighting, etc. In particular, the field of automotive lighting has higher requirements for the reliability of light-emitting diodes.

[0119] The above is only a preferred embodiment of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and replacements can be made without departing from the technical principles of the present application. These improvements and replacements should also be regarded as the scope of protection of the present application.

Claims

1. A light emitting diode, characterized in that: include: A semiconductor stack, comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence; a through hole, penetrating the second semiconductor layer and the light-emitting layer, exposing a portion of the surface of the first semiconductor layer; a first insulating layer, disposed on the semiconductor stack, having a first opening and a second opening, wherein the first opening exposes a portion of the surface of the first semiconductor layer; a first pad formed on the semiconductor stack and electrically connected to the first semiconductor layer through the first opening, wherein a projection of the first pad does not overlap with a projection of the through hole on a plane perpendicular to a direction of the semiconductor stack; a second pad formed on the semiconductor stack and electrically connected to the second semiconductor layer through the second opening, wherein a projection of the second pad does not overlap with a projection of the through hole on a plane perpendicular to a direction of the semiconductor stack; The first pad includes a first pad connection portion and a plurality of first pad extension portions extending toward the second pad, the second pad includes a second pad connection portion and a plurality of second pad extension portions extending toward the first pad, and on a plane perpendicular to the direction of the semiconductor stacking, the projection of the second opening portion is located between the projection of the first pad extension portion and the projection of the second pad extension portion.

2. The light emitting diode according to claim 1, characterized in that The device further includes a first connecting electrode and a second connecting electrode. The first connecting electrode is electrically connected to the first semiconductor layer through the first opening, and the second connecting electrode is electrically connected to the second semiconductor layer through the second opening.

3. The light emitting diode according to claim 2, characterized in that The second connection electrode includes a second electrode connection portion and a plurality of second electrode extensions extending toward the first pad. On a plane perpendicular to the direction of the semiconductor stack, a projection surface of the second opening is located within a projection surface of the second electrode extensions.

4. The light emitting diode according to claim 1, characterized in that The through hole distribution direction includes a first direction and a second direction, the first direction is the same as the extension direction of the first pad connecting portion, and the second direction is the same as the extension direction of the first pad extending portion.

5. The light emitting diode according to claim 4, characterized in that The through holes form a plurality of first auxiliary lines in the first direction and a plurality of second auxiliary lines in the second direction, and the second openings are staggered with the first auxiliary lines and the second auxiliary lines respectively.

6. The light emitting diode according to claim 4, characterized in that The through hole in the second direction is located between the second pad extensions.

7. The light emitting diode according to claim 1, characterized in that The number of the second openings is the same as the number of the second pad extensions.

8. The light emitting diode according to claim 2, characterized in that It also includes a second insulating layer, which is formed on the first connecting electrode and the second connecting electrode. The second insulating layer includes a third opening portion to expose a portion of the surface of the first connecting electrode and a fourth opening portion to expose a portion of the surface of the second connecting electrode. On a plane perpendicular to the direction of the semiconductor stack, the projection of the third opening portion is located within the projection of the first connecting electrode, and the projection of the fourth opening portion is located within the projection of the second connecting electrode.

9. The light emitting diode according to claim 1, characterized in that The width of the first pad extension is greater than the width of the second pad extension.

10. The light emitting diode according to claim 1, characterized in that On a plane perpendicular to the direction of the semiconductor stacking, a projection plane of the first opening is located within a projection plane of the through hole.

11. The light emitting diode according to claim 2, characterized in that It also includes a reflective layer and a blocking layer, the reflective layer is arranged on the second semiconductor layer, the blocking layer covers the reflective layer, the first insulating layer covers the blocking layer, and partially exposes the blocking layer at the second opening, and the second connecting electrode is electrically connected to the blocking layer through the second opening.

12. The light emitting diode according to claim 11, characterized in that The reflective layer includes a silver metal reflective layer.

13. The light emitting diode according to claim 12, characterized in that The invention also includes a transparent conductive layer, which is located between the second semiconductor layer and the reflective layer. The transparent conductive layer, the reflective layer and the conductive layer all avoid the through hole.

14. A light emitting diode, characterized in that: include: A semiconductor stack, comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence; a through hole passing through the second semiconductor layer and the light-emitting layer to expose a portion of the surface of the first semiconductor layer; a metal layer formed on the second semiconductor layer; a first insulating layer formed on the semiconductor stack, comprising a first opening and a second opening, wherein the first opening exposes a portion of the surface of the first semiconductor layer, and the second opening exposes a portion of the surface of the metal layer; a first connecting electrode formed on the first insulating layer and contacting the first semiconductor layer through the first opening; a second connecting electrode formed on the first insulating layer and contacting the metal layer through the second opening; a second insulating layer formed on the first connecting electrode and the second connecting electrode, comprising a third opening and a fourth opening; a first pad located in the third opening and electrically contacting the first semiconductor layer, the first pad comprising a first pad connecting portion and a plurality of first pad extending portions extending toward the second pad; a second pad formed on the semiconductor stack and located within the fourth opening, the second pad electrically contacting the second semiconductor layer through the second opening; the second pad comprising a second pad connecting portion and a plurality of second pad extensions extending toward the first pad, wherein a projection of the second opening is located between a projection of the first pad extension and a projection of the second pad extension on a plane perpendicular to a direction of the semiconductor stack; In which, on a plane perpendicular to the direction of the semiconductor stacking, the projections of the first pad and the second pad do not overlap with the projections of the first opening and the second opening respectively, and the projection of the second opening is located within the projection of the second connecting electrode.

15. The light emitting diode according to claim 14, characterized in that The second pad includes a second pad connecting portion and a plurality of second pad extending portions extending toward the first pad. The projection of the second pad extending portions is located within the projection of the second connecting electrode. The projection of the second opening portion does not overlap with the projection of the second pad extending portions.

16. The light emitting diode according to claim 14, characterized in that The first pad and the second pad have the same minimum distance from a center line of the light emitting diode.

17. The light emitting diode according to claim 14, characterized in that The distance between the first pad and the second pad is not less than 150 μm.

18. The light emitting diode according to claim 14, characterized in that There is a first distance between the first pad and the opening edge of the third opening, and the range of the first distance is between 5μm and 20μm; there is a second distance between the second pad and the opening edge of the fourth opening, and the range of the second distance is between 5μm and 20μm.

19. The light emitting diode according to claim 14, characterized in that The proportion of the projection area of ​​the first pad to the projection area of ​​the third opening is between 90% and 100%; the proportion of the projection area of ​​the second pad to the projection area of ​​the fourth opening is between 90% and 100%.

20. A light emitting diode, characterized in that: include: A semiconductor stack, comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence; a through hole passing through the second semiconductor layer and the light-emitting layer to expose a portion of the surface of the first semiconductor layer; a metal layer formed on the second semiconductor layer; a first insulating layer formed on the semiconductor stack, comprising a first opening and a second opening, wherein the first opening exposes a portion of the surface of the first semiconductor layer, and the second opening exposes a portion of the surface of the metal layer; a first connecting electrode formed on the first insulating layer and contacting the first semiconductor layer through the first opening; a second connecting electrode formed on the first insulating layer and contacting the metal layer through the second opening; The first connecting electrode includes a first electrode connecting portion and a plurality of first electrode extending portions extending toward the second connecting electrode, and the first electrode extending portions are staggered with the second opening portions. a first pad electrically connected to the first semiconductor layer, comprising a first pad connecting portion and a plurality of first pad extending portions extending toward the second pad; A second pad is electrically connected to the second semiconductor layer through the second opening, and includes a second pad connecting portion and a plurality of second pad extension portions extending toward the first pad. On a plane perpendicular to the direction of the semiconductor stacking, the projection of the second opening portion is located between the projection of the first pad extension portion and the projection of the second pad extension portion.

21. The light emitting diode according to claim 20, characterized in that The second connecting electrode includes a second electrode connecting portion and a plurality of second electrode extending portions extending toward the first connecting electrode, and the first electrode extending portions are staggered with the second electrode extending portions.

22. The light emitting diode according to claim 21, characterized in that The width of the first electrode extension portion is smaller than the width of the second electrode extension portion.

23. The light emitting diode according to claim 20, characterized in that The second connecting electrode fills the second opening, and an edge of the second connecting electrode is located on the upper surface of the first insulating layer.

24. A light emitting diode, characterized in that: include: A semiconductor stack, comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence; a through hole passing through the second semiconductor layer and the light-emitting layer to expose a portion of the surface of the first semiconductor layer; a first insulating layer, disposed on the semiconductor stack, comprising a first opening and a second opening, wherein the first opening penetrates the first insulating layer to expose the first semiconductor layer, and the second opening is located on the second semiconductor layer, wherein a vertical projection of a plurality of spaced-apart second openings on the semiconductor stack covers a center line of the light-emitting diode; a first connecting electrode located on the first insulating layer and contacting the first semiconductor layer through the first opening; a second connecting electrode, located on the first insulating layer and filling the second opening to be electrically connected to the second semiconductor layer; The first connecting electrode and the second connecting electrode are separated by a fifth annular opening; a first pad formed on the semiconductor stack and electrically connected to the first semiconductor layer through the first opening, the first pad comprising a first pad connecting portion and a plurality of first pad extending portions extending toward the second pad, wherein a projection of the first pad does not overlap with a projection of the through hole on a plane perpendicular to a direction of the semiconductor stack; A second solder pad is formed on the semiconductor stack and is electrically connected to the second semiconductor layer through the second opening. The second solder pad includes a second solder pad connecting portion and a plurality of second solder pad extensions extending toward the first solder pad. On a plane perpendicular to the direction of the semiconductor stack, the projection of the second opening is located between the projection of the first solder pad extension and the projection of the second solder pad extension, and the projection of the second solder pad does not overlap with the projection of the through hole.

25. The light emitting diode according to claim 24, characterized in that The opening range of the second opening portion at least covers the center position of the light emitting diode.

26. The light emitting diode according to claim 24, characterized in that It also includes a second insulating layer, which is arranged on the first and second connecting electrodes and includes a third opening and a fourth opening. The third opening is located on the first connecting electrode, and the fourth opening is located on the second connecting electrode.

27. The light emitting diode according to claim 26, characterized in that The second insulating layer fills the fifth opening.

28. The light emitting diode according to claim 24, characterized in that The fifth opening is a continuous annular opening, and the distance between the first connecting electrode and the second connecting electrode is not less than 20 μm.

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