A method for manufacturing a perovskite battery assembly and a perovskite battery assembly produced thereby

Abstract

The application provides a manufacturing method of a perovskite battery assembly and the perovskite battery assembly manufactured by the method. The manufacturing method comprises the following steps: setting a lower protective layer on a first charge transport layer and then performing P2 laser etching, and the P2 laser etching is controlled as follows: first, a first laser with high frequency and low power is used to perform first etching; then, a second laser with low frequency and high power is used to perform second etching; and after the lower protective layer and a top electrode are set, a third laser with high frequency and low power is used to perform P3 laser etching. By using the manufacturing method, the heat influence on both sides of the P2 line groove can be effectively reduced, the crater defects can be reduced, the flatness and cleanliness of the P2 line groove can be effectively improved, and the charge transport capacity of the internal interface of the assembly can be enhanced. The P3 line groove formed by the method only etches the top electrode and the two protective layers, does not damage other film layers, avoids the reaction between the perovskite layer and water and oxygen, improves the stability of the assembly, and finally improves the power generation efficiency of the assembly.

Description

Technical Field

[0001] This invention belongs to the field of solar cells and relates to a method for manufacturing a perovskite solar cell module and the resulting perovskite solar cell module. Background Technology

[0002] Energy, as a powerful driving force of the Industrial Revolution, has continuously propelled socio-economic development. In recent years, the continuous increase in industrial equipment has led to the consumption of vast amounts of fossil fuels, causing severe environmental pollution. Therefore, it is necessary to better develop and utilize clean energy. Solar energy, as an inexhaustible and renewable energy source, stands out among various new energy sources due to its unique environmental advantages. Solar cells, prepared using solar photovoltaic technology, have thus emerged. Among them, perovskite solar cells, as the third generation of solar cells, are unanimously recognized by experts and scholars as the most promising next-generation commercial photovoltaic product.

[0003] For the manufacturing of perovskite solar cells, laser etching is usually required to manufacture the modules. The existing laser etching process basically uses high-frequency, high-power lasers to perform a single through-etch. Although this method saves etching time, the laser is highly concentrated on the module film surface, which leads to phenomena such as edge chipping, peeling, uneven surface of the etching line, and serrated cross-section.

[0004] Specifically, perovskite solar cells typically consist of a bottom electrode, a hole transport layer, a perovskite layer, an electron transport layer, and a top electrode stacked sequentially. At least one of the bottom and top electrodes is a TCO layer (transparent conductive oxide layer). To construct multiple sub-cells in this stacked structure and connect them in series to form a solar module, laser etching processes P1, P2, and P3 are often employed. For example, CN111081877A discloses an internally connected perovskite solar cell module and its fabrication method. In this method, the perovskite solar cell module is divided into n internally connected perovskite sub-cells by the combined action of n-1 dicing grooves P1, P2.5, and P3. CN114678471A discloses a perovskite solar cell module and its processing method. This invention uses laser processing to create a first scribe line (equivalent to P1), a second scribe line (equivalent to P2), a third scribe line, and a fourth scribe line (equivalent to P3), utilizing four laser processing steps to fabricate a more compact series-connected electrical component from the perovskite.

[0005] However, both of the existing technologies require the etching depth of P2 and P3 to penetrate at least two charge transport layers and a perovskite layer. During this process, a significant portion of the heat energy will act on the two charge transport layers and the perovskite layer. Moreover, due to the limitations of the film thickness itself and the interfacial bonding energy of each film layer, a large amount of heat energy will be released non-uniformly from the laser etching location, resulting in uneven cross-sections of the P2 and P3 etched grooves. Among these, edge chipping and peeling phenomena increase the risk of short circuits between neutron cells in the module. At the same time, some perovskite residue will remain on the surface of the P2 and P3 etched lines, reducing the bonding force between the top electrode, the upper protective layer, and the second charge transport layer, and increasing the series resistance between the interfaces. Some heat energy will also accumulate on the TCO surface and radiate laterally in all directions because it cannot be released in time, resulting in varying degrees of vaporization and peeling of the conductive layer, reducing the bonding force between the electrode and the TCO surface, which in turn prevents timely charge transfer, reduces charge mobility, and ultimately reduces the power generation efficiency of the module.

[0006] Therefore, a new technical solution needs to be developed to improve and solve the above problems in order to effectively ensure the full performance of perovskite solar cell modules. Summary of the Invention

[0007] In view of the problems existing in the prior art, the purpose of this invention is to provide a method for manufacturing a perovskite solar cell module and the resulting perovskite solar cell module. The manufacturing method involves setting a lower protective layer on a first charge transport layer, followed by P2 laser etching. The P2 laser etching is controlled by first using a high-frequency, low-power first laser for the first etching, then using a low-frequency, high-power second laser for the second etching, and finally using a high-frequency, low-power third laser for P3 laser etching after setting the upper protective layer and the top electrode. By adopting this manufacturing method, the thermal impact on both sides of the P2 groove can be effectively reduced, the crater (a type of etching defect) can be reduced, the flatness and cleanliness of the P2 groove can be effectively improved, and the charge transport capacity of the module's internal interface can be enhanced, thus effectively improving the performance of the resulting perovskite solar cell module.

[0008] To achieve this objective, the present invention adopts the following technical solution:

[0009] In a first aspect, the present invention provides a method for manufacturing a perovskite solar cell module, the method comprising the following steps:

[0010] (1) Prepare a substrate and fabricate a bottom electrode on one side of the substrate. Perform P1 laser etching on the obtained bottom electrode to form a P1 groove; the P1 groove passes through the bottom electrode and contacts the substrate.

[0011] (2) A second charge transport layer, a perovskite layer, a first charge transport layer, and a lower protective layer are sequentially fabricated on the P1 groove and the bottom electrode, and P2 laser etching is performed to form the P2 groove; the P2 groove does not overlap with the P1 groove and passes through the second charge transport layer to contact the bottom electrode; the lower protective layer is a TCO layer or a metal layer; the P2 laser etching includes first using a first laser for first etching, and then using a second laser for second etching; the power of the first laser is less than 6W and the frequency is not less than 50kHz; the frequency of the second laser is less than 50kHz and the power is not less than 6W;

[0012] (3) A top electrode is prepared on the P2 groove and the lower protective layer, and P3 laser etching is performed to form a P3 groove; the P3 grooves do not overlap with the P2 grooves and the P1 grooves, and pass through at least the top electrode and the lower protective layer to obtain a perovskite solar cell module.

[0013] This invention first sets a lower protective layer on the first charge transport layer and then performs P2 laser etching. The P2 laser etching is controlled to first use a high-frequency, low-power laser for the first etching, followed by a low-frequency, high-power laser for the second etching. The first etching, in conjunction with the lower protective layer, acts as a pre-etching process, which helps optimize the surface state of the perovskite film in the P2 groove. The lower protective layer is made of the same material as the TCO layer or the metal layer, and is relatively thin. This allows the first etching laser to use only low energy (i.e., a high-frequency, low-power laser) to completely remove the lower protective layer, while avoiding edge chipping, peeling, and crater formation. Although a second low-frequency, high-power laser is still used for secondary processing to etch the remaining film, the absence of the lower protective layer leads to faster heat transfer. Based on the characteristics of heat transfer, heat tends to move towards lower temperatures. Therefore, continuing to use low-frequency, high-power etching parameters for the P2 line will not cause edge chipping, peeling, or crater formation, thus effectively improving the flatness and cleanliness of the P2 groove and enhancing the charge transport capability of the component's internal interface.

[0014] It is worth emphasizing that, regarding the determination of the parameters of the first and second lasers in this invention, on the one hand, it is necessary to ensure that the corresponding film layer is successfully and completely etched, and on the other hand, it is also necessary to ensure that other film layers are not damaged after the etching target is achieved, so as to minimize the impact of etching and improve the efficiency of the component. Through extensive research, this application has determined that in the P2 laser etching described in this invention, the frequency of the first laser (high-frequency, low-power laser) is generally not lower than 50kHz, and the power is generally lower than 6W; the frequency of the second laser (low-frequency, high-power laser) is generally lower than 50kHz, and the power is generally not lower than 6W. The specific selection of the parameters of the first and second lasers should take into account the material of the film layer targeted at the start of etching and be reasonably adjusted within a given range.

[0015] It should also be noted that the laser used in the P2 laser etching of the present invention acts directly on the film layer to be etched, while the P1 laser etching can be performed by directly applying the laser to the film layer to be etched, or by passing the laser through the substrate, such as glass, to etch the film layer to be etched.

[0016] The following are preferred technical solutions of the present invention, but are not intended to limit the technical solutions provided by the present invention. The technical objectives and beneficial effects of the present invention can be better achieved and realized through the following technical solutions.

[0017] As a preferred technical solution of the present invention, the P1 laser etching in step (1) is a positive focal etching, the laser power is 3 to 8W, for example 3W, 3.5W, 4W, 4.5W, 5W, 5.5W, 6W, 6.5W, 6W, 6.5W, 7W, 7.5W or 8W, the laser frequency is 10 to 150kHz, for example 10kHz, 30kHz, 50kHz, 80kHz, 120kHz or 150kHz, the laser pulse width is 2 to 150ns, for example 2ns, 10ns, 30ns, 50ns, 80ns, 120ns or 150ns, the laser processing rate is 0 to 2m / s and not 0m / s, for example 0.1m / s, 0.5m / s, 1m / s, 1.5m / s or 2m / s, but is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0018] Preferably, the width of the P1 groove is 15 to 50 μm, such as 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm or 50 μm, but it is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0019] As a preferred technical solution of the present invention, both the first etching and the second etching in step (2) are defocus etching.

[0020] Preferably, the power of the first laser is 3 to 6W and not 6W, such as 3W, 3.5W, 4W, 4.5W, 5W, 5.5W or 5.8W, and the frequency is 50 to 150kHz, such as 50kHz, 60kHz, 70kHz, 80kHz, 90kHz, 100kHz, 110kHz, 120kHz, 130kHz, 140kHz or 150kHz, but is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0021] Preferably, the power of the second laser is 6 to 18W, such as 6W, 7W, 8W, 9W, 10W, 11W, 12W, 13W, 14W, 15W, 16W, 17W or 18W, and the frequency is 10 to 50kHz and not 50kHz, such as 10kHz, 15kHz, 20kHz, 25kHz, 30kHz, 35kHz, 40kHz, 45kHz or 49kHz, but is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0022] Preferably, the pulse widths of the first laser and the second laser are independently selected from 2 to 150 ns, such as 2 ns, 10 ns, 30 ns, 50 ns, 80 ns, 120 ns or 150 ns, but are not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0023] Preferably, the processing speeds of the first laser and the second laser are independently selected from 0 to 2 m / s and are not 0 m / s, for example, 0.1 m / s, 0.5 m / s, 1 m / s, 1.5 m / s or 2 m / s, but are not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0024] Preferably, the width of the P2 groove is 15 to 400 μm, such as 15 μm, 30 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm or 400 μm, but it is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0025] Preferably, the thickness of the lower protective layer is 10 to 100 nm, such as 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm or 100 nm, but is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0026] Preferably, in step (2), the first etching is to etch the lower protective layer, and the etching depth penetrates the lower protective layer and contacts the first charge transport layer.

[0027] Preferably, in step (2), the second etching is to etch the first charge transport layer, the perovskite layer and the second charge transport layer, and the etching depth penetrates the second charge transport layer and contacts the bottom electrode.

[0028] Preferably, step (2) further includes preparing a modification layer between the first charge transport layer and the lower protective layer.

[0029] Preferably, when the modification layer is provided between the first charge transport layer and the lower protective layer in step (2), the P3 groove in step (3) passes through the lower protective layer and contacts the modification layer.

[0030] Preferably, when the modification layer is not provided between the first charge transport layer and the lower protective layer in step (2), the P3 groove in step (3) passes through the lower protective layer and contacts the first charge transport layer.

[0031] As a preferred technical solution of the present invention, step (3) includes first preparing an upper protective layer on the P2 groove and the lower protective layer, and then preparing the top electrode on the upper protective layer.

[0032] Preferably, the upper protective layer is selected from the material of the TCO layer or the material of the metal layer.

[0033] Preferably, the thickness of the upper protective layer is 10 to 100 nm, such as 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm or 100 nm, but is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0034] Preferably, the lower protective layer and the upper protective layer are made of different materials than the top electrode.

[0035] It should be noted that both the lower protective layer and the upper protective layer are independently selected from the material of the TCO layer or the material of the metal layer. "Independently selected from" means that the lower protective layer can be the material of the TCO layer or the material of the metal layer. The upper protective layer can be the material of the TCO layer or the material of the metal layer; the selection of materials for the lower and upper protective layers is independent and unrelated. Of course, depending on actual needs, the materials of the lower and upper protective layers can also be the same; those skilled in the art should make adjustments according to the actual situation.

[0036] Preferably, when the upper protective layer is provided between the lower protective layer and the top electrode in step (3), the P3 groove passes through the top electrode, the upper protective layer and the lower protective layer in sequence and contacts the film layer of the lower protective layer on the side close to the bottom electrode.

[0037] As a preferred technical solution of the present invention, the laser frequency of the P3 laser etching in step (3) is not less than 50kHz, and the laser power of the P3 laser etching is less than 6W.

[0038] Preferably, the laser power of the P3 laser etching is 3 to 6W and not 6W, such as 3W, 3.5W, 4W, 4.5W, 5W, 5.5W or 5.9W, etc., and the laser frequency is 50 to 150kHz, such as 50kHz, 60kHz, 70kHz, 80kHz, 90kHz, 100kHz, 110kHz, 120kHz, 130kHz, 140kHz or 150kHz, etc., but is not limited to the listed values, and other unlisted values ​​within the above range are also applicable.

[0039] This invention protects the exposed perovskite layer in the P2 slot by setting the upper protective layer, preventing the reactive top electrode material from damaging the perovskite lattice structure when filling the P2 slot. For the etching of the P3 slot, to ensure effective formation of sub-cells during laser dicing while preventing water and oxygen erosion of the perovskite layer, this invention preferably uses a low-frequency, high-power laser during P3 laser etching and only etches the top electrode, the upper protective layer, and the lower protective layer. This allows for the cutting off of the top layer of the module and the construction of an effective series structure while ensuring no damage to other film layers, thus improving the stability of the module.

[0040] Compared to existing technologies, this invention divides the protective layer into two parts: a lower protective layer and an upper protective layer. This makes the thickness of each part appropriately thinner, while each part still retains its ability to block water and oxygen erosion on the film surface. Under the lower protective layer and the matching P2 etching process, the charge transport capability of the interface within the module is optimized. Under the lower protective layer and the matching P3 etching process, the stability of the module is optimized. The combination of these technologies significantly improves the efficiency of the perovskite solar cell module obtained by the manufacturing method of this invention.

[0041] As a preferred technical solution of the present invention, the P3 laser etching in step (3) is a defocusing etching. The laser pulse width of the P3 laser etching is 2 to 150 ns, such as 2 ns, 10 ns, 30 ns, 50 ns, 80 ns, 120 ns or 150 ns, etc., and the laser processing rate is 0 to 2 m / s and not 0 m / s, such as 0.1 m / s, 0.5 m / s, 1 m / s, 1.5 m / s or 2 m / s, etc., but is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0042] Preferably, the width of the P3 groove is 15 to 300 μm, such as 15 μm, 30 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm or 300 μm, but it is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0043] As a preferred technical solution of the present invention, the thickness of the perovskite layer is 400-500 nm, such as 400 nm, 410 nm, 420 nm, 430 nm, 440 nm, 450 nm, 460 nm, 470 nm, 480 nm, 490 nm or 500 nm, but is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0044] Preferably, the material of the perovskite layer comprises ABX3 type perovskite material, wherein A includes Cs. + K + Ru + CH3NH3 + C(NH2)3 + or CH(NH2)2 + Any one or at least two of the above, typical but non-limiting examples of which include Cs + With K + Combinations, Cs + With Ru + Combinations, Cs + With CH3NH3 + Combinations, Cs + With C(NH2)3 + Combinations, Cs + With CH(NH2)2 + Combination, CH3NH3 + With CH(NH2)2 + Combination, Ru + With C(NH2)3 + Combination, Ru + With CH3NH3 + Combinations; B includes Pb 2+ and / or Sn 2+ X includes Br - I - or Cl - Any one or at least two of the above, typical but non-limiting examples of which include Br - with I - Combination, Br - With Cl - Combination, Cl - with I - The combination of .

[0045] Preferably, the method for preparing the perovskite layer includes any one or a combination of at least two of spin coating, wire rod coating, slot coating, screen printing, or inkjet printing. Typical but non-limiting examples of such combinations include a combination of spin coating and wire rod coating, a combination of wire rod coating and slot coating, a combination of screen printing and inkjet printing, and a combination of inkjet printing and spin coating.

[0046] As a preferred embodiment of the present invention, the second charge transport layer transmits the opposite type of charge as the first charge transport layer.

[0047] The perovskite solar cell module described in this invention can be a pin structure or a nip structure. When it is a pin structure, the second charge transport layer is a hole transport layer and the first charge transport layer is an electron transport layer. In this case, the bottom electrode, hole transport layer, perovskite layer, electron transport layer, lower protective layer, upper protective layer and top electrode are arranged layer by layer from bottom to top. When it is a nip structure, the second charge transport layer is an electron transport layer and the first charge transport layer is a hole transport layer. In this case, the bottom electrode, electron transport layer, perovskite layer, hole transport layer, lower protective layer, upper protective layer and top electrode are arranged layer by layer from bottom to top.

[0048] Preferably, the second charge transport layer is a hole transport layer, and the first charge transport layer is an electron transport layer.

[0049] Preferably, the thickness of both the second charge transport layer and the first charge transport layer is 10 to 100 nm, such as 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm or 100 nm, but is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0050] Preferably, the material of the hole transport layer includes any one or a combination of at least two of the following: nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, copper oxide, cuprous oxide, cobalt oxide, TAPC (1,1'-metano(bis-4-tolylaminophenyl)cyclohexylamine), PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]), PEDOT ((3,4-ethylenedioxythiophene monomer) polymer), Poly-TPD (poly[bis(4-phenyl)(4-butylphenyl)amine]), and Spiro-MeOTAD (2,2',7,7'-tetra(N,N-p-methoxyaniline)-9,9'-spirodifluorene). Typical but non-limiting examples of such combinations include combinations of nickel oxide and molybdenum oxide, combinations of vanadium oxide and copper sulfide, combinations of cuprous thiocyanate and cobalt oxide, combinations of TAPC and nickel oxide, combinations of TAPC and Poly-TPD, and combinations of PEDOT and Spiro-MeOTAD.

[0051] Preferably, the material of the electron transport layer includes titanium dioxide, zinc oxide, cadmium sulfide, tin dioxide, indium trioxide, tungsten oxide, cerium oxide, and C. 60 C 70 Any one or a combination of at least two of PCBM (alkylfullerene phenyl-C61-butyrate methyl ester), typical but non-limiting examples of which include combinations of titanium dioxide and zinc oxide, combinations of titanium dioxide and tin oxide, combinations of titanium dioxide and cerium oxide, and C... 60 Combination with tin dioxide, C 70 Combinations with PCBM, and combinations of cerium oxide and PCBM.

[0052] As a preferred technical solution of the present invention, the thickness of the bottom electrode is 200-700nm, such as 200nm, 300nm, 400nm, 500nm, 600nm or 700nm, but is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0053] Preferably, the thickness of the top electrode is 10 to 100 nm, such as 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm or 100 nm, but is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0054] Preferably, the bottom electrode is a TCO layer.

[0055] Preferably, the top electrode is a metal layer or a TCO layer.

[0056] Preferably, the material of the TCO layer includes any one or a combination of at least two of FTO (fluorine-doped tin oxide), ITO (indium-doped tin oxide), AZO (aluminum-doped zinc oxide), ATO (aluminum-doped tin oxide), IGO (indium-doped gallium oxide), or BZO (boron-doped zinc oxide). Typical but non-limiting examples of such combinations include combinations of FTO and ITO, FTO and AZO, FTO and ATO, FTO and IGO, FTO and BZO, ITO and AZO, ITO and ATO, ITO and IGO, ITO and BZO, AZO and IGO, and ATO and BZO.

[0057] Preferably, the material of the metal layer includes any one or a combination of at least two of Ag, Cu, Al, Cr, Ni, or Ti. Typical but non-limiting examples of such combinations include combinations of Ag and Cu, Ag and Al, Ag and Cr, Ag and Ni, Ag and Ti, Cu and Al, Cu and Cr, Cu and Ni, Cu and Ti, Al and Cr, Al and Ni, Al and Ti, Ni and Ti, and Cr and Ti.

[0058] As a preferred technical solution of the present invention, the substrate includes any one or a combination of at least two of glass, plastic, stainless steel mesh, nickel mesh, and flexible organic materials. Typical but non-limiting examples of the combination include combinations of plastic and glass, plastic and stainless steel mesh, glass and stainless steel mesh, stainless steel mesh and nickel mesh, glass and nickel mesh, plastic and nickel mesh, plastic and flexible organic materials, and flexible organic materials and stainless steel mesh.

[0059] It should also be noted that the preparation methods of the second charge transport layer, the first charge transport layer, the bottom electrode, the top electrode, the lower protective layer, and the upper protective layer of the present invention are all independently selected from any one or at least a combination of two of the following: chemical reagent spin coating, wire rod coating, slot coating, electron beam evaporation, magnetron sputtering, and vacuum thermal evaporation. Typical but non-limiting examples of such combinations include combinations of chemical reagent spin coating and wire rod coating, combinations of wire rod coating and slot coating, combinations of slot coating and electron beam evaporation, combinations of electron beam evaporation and magnetron sputtering, combinations of magnetron sputtering and vacuum thermal evaporation, and combinations of vacuum thermal evaporation and chemical reagent spin coating.

[0060] In a second aspect, the present invention provides a perovskite solar cell module obtained by the preparation method described in the first aspect.

[0061] Compared with existing technical solutions, the present invention has at least the following beneficial effects:

[0062] (1) The manufacturing method of the present invention sets the lower protective layer on the first charge transport layer and then performs P2 laser etching, and controls the P2 laser etching to be a gradient etching process, which can reduce the heat-affected zone on both sides of the P2 line, improve the flatness of the P2 line groove cross section, reduce the probability of crater defects, and at the same time the surface of the P2 line groove is also cleaner and flatter, which is conducive to enhancing the bonding force between the top electrode, the upper protective layer and the first charge transport layer, improving the charge transport capability of the module interface, and ultimately improving the power generation efficiency of the module;

[0063] (2) After setting the upper protective layer, the present invention performs high-frequency low-power P3 laser etching, and controls the P3 etching depth to only reach the lower protective layer without damaging the various film layers below the lower protective layer. While realizing the freedom of etching electrode thickness, it effectively avoids the reaction between the perovskite layer and water and oxygen, reduces the probability of perovskite decomposition, and improves the stability of the component.

[0064] (3) By setting thinner lower and upper protective layers respectively, and with the cooperation of specific etching processes, the efficiency of the perovskite solar cell module obtained by the present invention is effectively improved. Attached Figure Description

[0065] Figure 1 This is a schematic diagram of the product obtained after step (1) of the manufacturing method described in Embodiment 1 of the present invention;

[0066] Figure 2 This is a schematic diagram of the product obtained after step (2) of the manufacturing method described in Embodiment 1 of the present invention;

[0067] Figure 3 This is a schematic diagram of the perovskite battery module obtained after step (2) of the manufacturing method described in Embodiment 1 of the present invention;

[0068] Figure 4 These are stability test diagrams of the perovskite solar cell modules obtained in Embodiments 1, 6, Comparative Example 1, and Comparative Example 3 of the present invention.

[0069] In the figure: 1-substrate, 2-bottom electrode, 3-second charge transport layer, 4-perovskite layer, 5-first charge transport layer, 6-modification layer, 7-lower protective layer, 8-upper protective layer, 9-top electrode, 10-P1 groove, 11-P2 groove, 12-P3 groove. Detailed Implementation

[0070] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be considered as specific limitations thereof.

[0071] Example 1

[0072] This embodiment provides a method for manufacturing a perovskite solar cell module, the method comprising the following steps:

[0073] (1) Clean the front and back sides of the glass substrate with a cleaning agent, then sonicate it in the cleaning agent dilution, deionized water and hot anhydrous ethanol for 15 minutes respectively, and then dry it in a drying oven. Then prepare a 500nm thick FTO transparent conductive layer as the bottom electrode on one side of the substrate.

[0074] P1 laser etching is performed on the obtained bottom electrode, with the laser focal length set to -54.2mm (positive focal length), laser power to be 5W, laser frequency to be 100kHz, laser pulse width to be 50ns, and laser processing speed to be 0.1m / s, forming a P1 groove with a width of 20μm, and the P1 groove passes through the bottom electrode and contacts the substrate.

[0075] Perform cleaning again, following the same cleaning process as the substrate cleaning process;

[0076] (2) A NiO layer with a thickness of 30 nm was prepared on the bottom electrode and in the P1 groove by magnetron sputtering. x A second charge transport layer is formed, which serves as a hole transport layer;

[0077] Weigh out the CsFAMA system perovskite precursor powder, dissolve it in a mixed solution of DMF (N,N-dimethylformamide), 2-Me (2-mercaptoethanol) and NMP (N-methylpyrrolidone), and stir at 25°C for at least 12 hours to prepare a perovskite precursor solution. Then, prepare a 450 nm thick perovskite layer on the second charge transport layer using the slit coating method.

[0078] A C layer with a thickness of 18 nm was thermally deposited on the perovskite using an evaporation deposition machine. 60 A first charge transport layer is formed as an electron transport layer, and then a 2nm thick BCP (bath copper spirit) is thermally vapor-deposited on the first charge transport layer as a modification layer.

[0079] Then, a 20nm thick Cr layer is thermally vapor-deposited on the modified layer as a lower protective layer. The first etching process of P2 laser etching is performed on the lower protective layer, with the laser focal length set to -53.2mm (defocused), the laser power to be 4W, the laser frequency to be 50kHz, the laser pulse width to be 50ns, and the laser processing speed to be 0.1m / s, so that the lower protective layer is etched clean.

[0080] Then, the second etching process begins on the exposed modified layer. The laser focal length is set to -53.2mm (defocused), the laser power to be 6.6W, the laser frequency to be 30kHz, the laser pulse width to be 50ns, and the laser processing speed to be 0.1m / s. The modified layer, the first charge transport layer, the perovskite layer, and the second charge transport layer are etched cleanly without damaging the bottom electrode, forming a P2 groove with a width of 200μm. The P2 groove does not overlap with the P1 groove and passes through the second charge transport layer to contact the bottom electrode.

[0081] (3) A 20 nm thick FTO layer is sputtered on the lower protective layer and in the P2 groove using magnetron sputtering as an upper protective layer, and then an 80 nm thick Ag layer is sputtered on the upper protective layer as a top electrode.

[0082] P3 laser etching is performed starting from the top electrode, with a laser focal length of -53.2mm (defocused), a laser power of 4.4W, a laser frequency of 50kHz, a laser pulse width of 50ns, and a laser processing speed of 0.1m / s. The top electrode, the upper protective layer, and the lower protective layer are etched cleanly without damaging the first charge transport layer, forming a P3 groove with a width of 100μm. The P3 grooves do not overlap with the P2 grooves and the P1 grooves, and they pass through the lower protective layer and contact the first charge transport layer to obtain a perovskite solar cell module.

[0083] Figure 1 , Figure 2 and Figure 3The diagram shows the product obtained after completing steps (1), (2), and (3) of the manufacturing method described in this embodiment. As can be seen from the diagram, in step (1), a bottom electrode 2 is provided on one side surface of the substrate 1. Then, P1 laser etching is performed on the bottom electrode 2 to form a P1 groove 10. The P1 groove 10 penetrates the bottom electrode 2 and contacts the substrate 1. In step (2), a second charge transport layer 3 is prepared on the bottom electrode 2 and in the P1 groove 10. The second charge transport layer 3 completely fills the P1 groove 10. Then, a perovskite layer 4, a first charge transport layer 5, a modification layer 6, and a lower protective layer 7 are sequentially prepared on the second charge transport layer 3. P2 laser etching is then performed starting from the lower protective layer 7 to form a P2 groove 11. The P2 groove 11 sequentially penetrates the lower protective layer 7, the modification layer 6, the first charge transport layer 5, the perovskite layer 4, and the second charge transport layer 3, and contacts the substrate 1. Electrode 2 contacts but does not damage the bottom electrode 2, and does not overlap with the position of the P1 groove 10; in step (3), an upper protective layer 8 and a top electrode 9 are sequentially prepared on the lower protective layer 7 and in the P2 groove 11. The upper protective layer 8 and the top electrode 9 are filled together in the P2 groove 11. The upper protective layer 8 isolates the top electrode 9 from the lower protective layer 7, the modification layer 6, the first charge transport layer 5, the perovskite layer 4, the second charge transport layer 3 and the bottom electrode 2 in the P2 groove 11. Then, in step (3), P3 laser etching is performed starting from the top electrode 9 to form the P3 groove 12. The P3 groove 12 penetrates the top electrode 9, the upper protective layer 8 and the lower protective layer 7 and contacts the modification layer 6 but does not damage the modification layer 6 and the first charge transport layer 5 and the layers below it. It does not overlap with the position of the P1 groove 10 and the P2 groove 11 to obtain the perovskite battery module.

[0084] Example 2

[0085] This embodiment provides a method for manufacturing a perovskite solar cell module. The method is exactly the same as that in Embodiment 1, except that the material of the lower protective layer in step (2) is changed from Cr to FTO and the material of the upper protective layer in step (3) is changed from FTO to Cr.

[0086] Example 3

[0087] This embodiment provides a method for manufacturing a perovskite solar cell module. The method is identical to that in Embodiment 1 except that the material of the lower protective layer in step (2) is changed from Cr to FTO.

[0088] Example 4

[0089] This embodiment provides a method for manufacturing a perovskite solar cell module. The method is exactly the same as that in Embodiment 1, except that the material of the upper protective layer in step (3) is changed from FTO to Cr.

[0090] Example 5

[0091] This embodiment provides a method for manufacturing a perovskite solar cell module. In step (3) of the manufacturing method, the P3 laser etching is performed using a low-frequency, high-power laser, and the etching depth is increased. Specifically, step (3) is as follows: an upper protective layer and a top electrode identical to those in Embodiment 1 are prepared sequentially, and then P3 laser etching is performed starting from the top electrode. The laser focal length is set to -53.2 mm (defocus), the laser power is 6.6 W, the laser frequency is 30 kHz, the laser pulse width is 50 ns, and the laser processing speed is 0.1 m / s. The top electrode, the upper protective layer, the lower protective layer, the modification layer, the first charge transport layer, the perovskite layer, and the second charge transport layer are etched clean to form a P3 groove with a width of 100 μm. The P3 grooves do not overlap with the P2 grooves and the P1 grooves, and pass through the lower protective layer and contact the first charge transport layer to obtain the perovskite solar cell module.

[0092] Apart from the above, steps (1) and (2) of this embodiment are exactly the same as those of embodiment 1.

[0093] Example 6

[0094] This embodiment provides a method for manufacturing a perovskite solar cell module. In step (3) of the manufacturing method, no upper protective layer is set. That is, step (3) is: a top electrode identical to that in Embodiment 1 is directly prepared on the lower protective layer, and then P3 laser etching is performed starting from the top electrode. The laser focal length is set to -53.2mm (defocus), the laser power is 4.4W, the laser frequency is 50kHz, the laser pulse width is 50ns, and the laser processing speed is 0.1m / s. The top electrode and the lower protective layer are etched cleanly without damaging the modification layer, forming a P3 groove with a width of 100μm. The P3 grooves do not overlap with the P2 grooves and the P1 grooves, and pass through the lower protective layer and contact the modification layer to obtain the perovskite solar cell module.

[0095] Apart from the above, steps (1) and (2) of this embodiment are exactly the same as those of embodiment 1.

[0096] Comparative Example 1

[0097] This comparative example provides a method for manufacturing a perovskite solar cell module. In step (2) of the manufacturing method, only a low-frequency, high-power second etching process is performed. That is, step (2) is as follows: a second charge transport layer, a perovskite layer, a first charge transport layer, a modification layer, and a lower protective layer are prepared sequentially, which are exactly the same as those in Example 1. Then, the second etching process of P2 laser etching is performed directly on the lower protective layer. The laser focal length is set to -53.2 mm (defocused), the laser power is 6.6 W, the laser frequency is 30 kHz, the laser pulse width is 50 ns, and the laser processing speed is 0.1 m / s. The lower protective layer, the modification layer, the first charge transport layer, the perovskite layer, and the second charge transport layer are etched clean to form a P2 groove with a width of 200 μm. The P2 groove does not overlap with the P1 groove and passes through the second charge transport layer to contact the bottom electrode.

[0098] Apart from the above, steps (1) and (3) of this comparative example are exactly the same as those of Example 1.

[0099] Comparative Example 2

[0100] This comparative example provides a method for manufacturing a perovskite solar cell module. In step (2) of the manufacturing method, only a low-frequency, high-power second etching process is performed. In step (3), the P3 laser etching is performed using a low-frequency, high-power laser, and the depth of P3 etching is increased. That is, step (2) is as follows: the second charge transport layer, the perovskite layer, the first charge transport layer, the modification layer and the lower protective layer are prepared in sequence, which are exactly the same as those in Example 1. Then, the second etching process in P2 laser etching is performed directly on the lower protective layer. The laser focal length is set to -53.2mm (defocused), the laser power is 6.6W, the laser frequency is 30kHz, the laser pulse width is 50ns and the laser processing speed is 0.1m / s. The lower protective layer, the modification layer, the first charge transport layer, the perovskite layer and the second charge transport layer are etched clean to form a P2 groove with a width of 200μm. The P2 groove does not overlap with the P1 groove and passes through the second charge transport layer to contact the bottom electrode.

[0101] That is, step (3) is as follows: prepare an upper protective layer and a top electrode that are exactly the same as in Example 1, and then perform P3 laser etching starting from the top electrode. Set the laser focal length to -53.2mm (defocus), the laser power to 6.6W, the laser frequency to 30kHz, the laser pulse width to 50ns, and the laser processing speed to 0.1m / s. Etch the top electrode, the upper protective layer, the lower protective layer, the modification layer, the first charge transport layer, the perovskite layer, and the second charge transport layer cleanly to form a P3 groove with a width of 100μm. The P3 grooves do not overlap with the P2 grooves and the P1 grooves, and pass through the lower protective layer and contact the first charge transport layer to obtain a perovskite solar cell module.

[0102] Apart from that, step (1) of this comparative example is exactly the same as that of Example 1.

[0103] Comparative Example 3

[0104] This comparative example provides a method for manufacturing a perovskite solar cell module. In step (2) of the manufacturing method, no lower protective layer is set. That is, step (2) is as follows: the second charge transport layer, the perovskite layer, the first charge transport layer, and the modification layer are prepared in sequence, which are exactly the same as those in Example 1. Then, the second etching process is performed directly on the modification layer. The laser focal length is set to -53.2mm (defocus), the laser power is 6.6W, the laser frequency is 30kHz, the laser pulse width is 50ns, and the laser processing speed is 0.1m / s. The modification layer, the first charge transport layer, the perovskite layer, and the second charge transport layer are etched cleanly without damaging the bottom electrode, forming a P2 groove with a width of 200μm. The P2 groove does not overlap with the P1 groove and passes through the second charge transport layer to contact the bottom electrode.

[0105] Apart from the above, steps (1) and (3) of this comparative example are exactly the same as those of Example 1.

[0106] The photoelectric conversion efficiency of the perovskite solar cell modules obtained in Examples 1-6 and Comparative Examples 1-3 was tested, and the results are shown in Table 1.

[0107] Table 1

[0108]

[0109]

[0110] As can be seen from Table 1:

[0111] (1) Comparing Examples 1, 5, and Comparative Examples 1 and 2, it was found that the P2 groove in Comparative Example 1 was a through-etching (penetrating the second charge transport layer) performed directly on the lower protective layer using a low-frequency, high-power laser. In this case, the lower protective layer would peel and curl, making it impossible to optimize and protect the surface state and structure of the perovskite layer during the P2 etching process. Therefore, the device efficiency of Comparative Example 1 decreased. In Example 5, the P3 groove was a through-etching (penetrating the second charge transport layer) performed directly on the top electrode using a low-frequency, high-power laser. In this case, peeling and curling in the P3 groove were also severe, resulting in significant efficiency loss. In Comparative Example 2... Both P2 and P3 are through-etching processes performed using low-frequency, high-power lasers, resulting in the lowest efficiency. In Example 1, P2 etching involves performing the first etching on the lower protective layer followed by the second etching, while ensuring that the P3 groove only cuts through the top electrode, upper protective layer, and lower protective layer. With the combination of these two aspects, the resulting component has the highest efficiency. Therefore, in this invention, by setting a lower protective layer and dividing P2 etching into two steps, it is preferable to further ensure that P3 etching effectively cuts through only the top electrode, upper protective layer, and lower protective layer without damaging other film layers, thereby minimizing the adverse effects of etching damage and obtaining optimal component performance.

[0112] (2) Comparing Example 1 and Examples 2-4, it was found that when either FTO or Cr is used as the upper or lower protective layer, or when both the upper and lower protective layers are made of FTO or Cr, the efficiency of the prepared battery modules does not deviate significantly.

[0113] (3) Comparing Example 1, Example 6, Comparative Example 1, and Comparative Example 3, it was found that no upper protective layer was provided in Example 6, but the P3 etching in Example 6 was non-penetrating, only removing the top electrode and the upper protective layer. Therefore, its efficiency was not significantly different from that of Example 1. Figure 4 The figures show the stability test results of the perovskite solar cell modules obtained in Examples 1 and 6, Comparative Examples 1 and 3. The test conditions were 1000 hours of illumination, 85% relative humidity, and 85°C. As can be seen from the figures, compared to Example 1, which included a lower and upper protective layer in its manufacturing method and performed gradient P2 laser etching, combined with high-frequency, low-power P3 etching and limiting the P3 etching depth to only the lower protective layer, the perovskite solar cell module obtained using this manufacturing method has longer stability and the highest efficiency after 1000 hours of operation. Although the efficiency of Example 6 is not much different from that of Example 1, its stability is reduced. Comparative Example 1 directly performs P2 through-etching in the presence of the lower protective layer, while Comparative Example 3, without a lower protective layer, directly performs P2 through-etching from the modification layer. Therefore, the efficiency of both examples is lower than that of Example 1, and the stability of Comparative Example 3 is even worse than that of Comparative Example 1 because it does not have a lower protective layer.

[0114] The present invention has been illustrated with the above embodiments to illustrate its detailed structural features. However, the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must rely on the above detailed structural features to be implemented. Those skilled in the art should understand that any improvements to the present invention, equivalent substitutions for the components used in the present invention, additions of auxiliary components, and selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

[0115] The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the specific details of the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention. It should be particularly noted that those skilled in the art know that perovskite solar cells can have various structures. For example, in some perovskite solar cell structures, one or more of the upper protective layer, electron transport layer, and hole transport layer described in the present invention are absent. The technical solutions disclosed in the present invention can be applied to perovskite solar cell modules with these simple structural changes, and these simple modifications all fall within the protection scope of the present invention.

[0116] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not describe the various possible combinations separately.

[0117] Furthermore, various different embodiments of the present invention can be combined in any way, as long as they do not violate the spirit of the present invention, they should also be regarded as the content disclosed by the present invention.

Claims

1. A method for manufacturing a perovskite solar cell module, characterized in that, The manufacturing method includes the following steps: (1) Prepare a substrate and fabricate a bottom electrode on one side of the substrate. Perform P1 laser etching on the obtained bottom electrode to form a P1 groove; the P1 groove passes through the bottom electrode and contacts the substrate. (2) A second charge transport layer, a perovskite layer, a first charge transport layer, and a lower protective layer are sequentially fabricated on the P1 groove and the bottom electrode, and P2 laser etching is performed to form the P2 groove; the P2 groove does not overlap with the P1 groove and passes through the second charge transport layer to contact the bottom electrode; the lower protective layer is a TCO layer or a metal layer; the P2 laser etching includes first using a first laser for first etching, and then using a second laser for second etching; the power of the first laser is less than 6W and the frequency is not less than 50kHz; the frequency of the second laser is less than 50kHz and the power is not less than 6W; (3) A top electrode is prepared on the P2 groove and the lower protective layer, and P3 laser etching is performed to form a P3 groove; the P3 groove does not overlap with the P2 groove and the P1 groove, and passes through at least the top electrode and the lower protective layer to obtain a perovskite solar cell module.

2. The manufacturing method according to claim 1, characterized in that, The P1 laser etching in step (1) is a positive focus etching with a laser power of 3~8W, a laser frequency of 10~150kHz, a laser pulse width of 2~150ns, and a laser processing speed of 0~2m / s and not 0m / s.

3. The manufacturing method according to claim 1, characterized in that, The width of the P1 groove is 15~50μm.

4. The manufacturing method according to claim 1, characterized in that, Step (2) Both the first etching and the second etching are defocus etching.

5. The manufacturing method according to claim 1, characterized in that, The power of the first laser is 3~6W and not 6W, and the frequency is 50~150kHz.

6. The manufacturing method according to claim 1, characterized in that, The power of the second laser is 6~18W, and the frequency is 10~50kHz, but not 50kHz.

7. The manufacturing method according to claim 1, characterized in that, The pulse widths of the first laser and the second laser are independently selected from 2 to 150 ns.

8. The manufacturing method according to claim 1, characterized in that, The processing speeds of the first laser and the second laser are both independently selected from 0 to 2 m / s and are not 0 m / s.

9. The manufacturing method according to claim 1, characterized in that, The width of the P2 groove is 15~400μm.

10. The manufacturing method according to claim 1, characterized in that, The thickness of the lower protective layer is 10~100nm.

11. The manufacturing method according to claim 1, characterized in that, Step (2) The first etching is to etch the lower protective layer, and the etching depth penetrates the lower protective layer and contacts the first charge transport layer.

12. The manufacturing method according to claim 1, characterized in that, Step (2) The second etching is to etch the first charge transport layer, the perovskite layer and the second charge transport layer, and the etching depth penetrates the second charge transport layer and contacts the bottom electrode.

13. The manufacturing method according to claim 1, characterized in that, Step (2) further includes preparing a modification layer between the first charge transport layer and the lower protective layer.

14. The manufacturing method according to claim 13, characterized in that, When the modification layer is provided between the first charge transport layer and the lower protective layer in step (2), the P3 groove passes through the lower protective layer and contacts the modification layer in step (3).

15. The manufacturing method according to claim 13, characterized in that, In step (2), if the modification layer is not provided between the first charge transport layer and the lower protective layer, in step (3), the P3 groove passes through the lower protective layer and contacts the first charge transport layer.

16. The manufacturing method according to claim 1, characterized in that, Step (3) includes first preparing an upper protective layer on the P2 groove and the lower protective layer, and then preparing the top electrode on the upper protective layer.

17. The manufacturing method according to claim 16, characterized in that, The upper protective layer is selected from the material of the TCO layer or the material of the metal layer.

18. The manufacturing method according to claim 16, characterized in that, The thickness of the upper protective layer is 10~100nm.

19. The manufacturing method according to claim 16, characterized in that, The materials of the lower protective layer and the upper protective layer are different from those of the top electrode.

20. The manufacturing method according to claim 16, characterized in that, When the upper protective layer is provided between the lower protective layer and the top electrode in step (3), the P3 groove passes through the top electrode, the upper protective layer and the lower protective layer in sequence and comes into contact with the film layer of the lower protective layer on the side near the bottom electrode.

21. The manufacturing method according to claim 1, characterized in that, In step (3), the laser frequency of the P3 laser etching is not less than 50kHz, and the laser power of the P3 laser etching is less than 6W.

22. The manufacturing method according to claim 21, characterized in that, The laser power of the P3 laser etching is 3~6W and not 6W, and the laser frequency is 50~150kHz.

23. The manufacturing method according to claim 1, characterized in that, The P3 laser etching in step (3) is defocus etching. The laser pulse width of the P3 laser etching is 2~150ns, and the laser processing rate is 0~2m / s and not 0m / s.

24. The manufacturing method according to claim 1, characterized in that, The width of the P3 groove is 15~300μm.

25. The manufacturing method according to claim 1, characterized in that, The thickness of the perovskite layer is 400~500nm.

26. The manufacturing method according to claim 1, characterized in that, The perovskite layer is made of ABX3 type perovskite material, wherein A includes Cs. + K + Ru + CH3NH3 + C(NH2)3 + or CH(NH2)2 + Any one or at least two of the following; B includes Pb 2+ and / or Sn 2+ X includes Br - I - or Cl - Any one or at least two of them.

27. The manufacturing method according to claim 1, characterized in that, The perovskite layer is prepared by any one or a combination of at least two of the following methods: spin coating, wire bar coating, slot coating, screen printing, or inkjet printing.

28. The manufacturing method according to claim 1, characterized in that, The second charge transport layer transports the opposite type of charge to the first charge transport layer.

29. The manufacturing method according to claim 1, characterized in that, The second charge transport layer is a hole transport layer, and the first charge transport layer is an electron transport layer.

30. The manufacturing method according to claim 1, characterized in that, The thickness of both the second charge transport layer and the first charge transport layer is 10~100nm.

31. The manufacturing method according to claim 29, characterized in that, The material of the hole transport layer includes any one or a combination of at least two of nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, copper oxide, cuprous oxide, cobalt oxide, TAPC, PTAA, PEDOT, Poly-TPD, and Spiro-MeOTAD.

32. The manufacturing method according to claim 29, characterized in that, The electron transport layer is made of materials including titanium dioxide, zinc oxide, cadmium sulfide, tin dioxide, indium trioxide, tungsten oxide, cerium oxide, and C. 60 C 70 Any one or at least two of PCBMs.

33. The manufacturing method according to claim 1, characterized in that, The thickness of the bottom electrode is 200~700nm.

34. The manufacturing method according to claim 1, characterized in that, The thickness of the top electrode is 10~100nm.

35. The manufacturing method according to claim 1, characterized in that, The bottom electrode is selected from the material of the TCO layer.

36. The manufacturing method according to claim 1, characterized in that, The top electrode is selected from the material of the metal layer or the material of the TCO layer.

37. The manufacturing method according to claim 1, characterized in that, The material of the TCO layer includes any one or a combination of at least two of FTO, ITO, AZO, ATO, IGO, or BZO.

38. The manufacturing method according to claim 1, characterized in that, The material of the metal layer includes any one or a combination of at least two of Ag, Cu, Al, Cr, Ni, or Ti.

39. The manufacturing method according to claim 1, characterized in that, The substrate includes any one or a combination of at least two of the following: glass, plastic, stainless steel mesh, nickel mesh, and flexible organic materials.

40. A perovskite solar cell module obtained by the preparation method according to any one of claims 1-39.

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