A controllable wavelength laser simulation device and simulation method for an optical module
Through the design of PN semiconductor waveguide and resonant cavity unit with a ring structure, the problem of wavelength regulation of the optical module laser is solved, and the stable output and efficient operation of the laser are achieved.
Patent Information
- Application Number
- CN202211270231.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-10-13
- Publication Date
- 2025-07-22
- Estimated Expiration
- 2042-10-13
AI Technical Summary
In the prior art, the wavelength regulation of optical module lasers is difficult, resulting in unstable laser output wavelength and affecting working efficiency.
The PN semiconductor waveguide and resonant cavity unit adopt a ring-like structure change the refractive index of the waveguide by controlling the input current size, filtering light at a specific wavelength, and achieving total reflection in the resonant cavity, filtering the fuzzy light to excite the gain medium to generate photons.
The emission stability and working efficiency of the laser are improved, the stability of the output wavelength is ensured, and the utilization rate of photons and the photon generation efficiency of the gain medium are improved.
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Figure CN115548872B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of optical module lasers, and specifically relates to a controllable wavelength laser simulation device and simulation method for an optical module. Background Art
[0002] With the rapid development of optical communication technology, the advantages of optical modules have gradually emerged. Because of their advantages such as wide transmission frequency band, large communication capacity, and strong anti-electromagnetic interference ability, the application fields are also gradually expanding, such as video optical transceivers, fiber optic transceivers, switches, fiber optic routers, and so on.
[0003] In the prior art, a pure hardware chip control method is mostly used to regulate the output wavelength. This method not only increases the test cost, but also brings difficulties in wavelength screening due to the large hardware debugging difficulty, and then leads to problems such as unstable output wavelength of the laser and reduced emission stability of the laser, which further affects the working efficiency of the optical module laser. Summary of the Invention
[0004] The technical problem to be solved by the present invention is to provide a controllable wavelength laser simulation device and simulation method for an optical module that helps to improve the emission stability and working efficiency of the laser.
[0005] To solve the above technical problem, the present invention adopts the following technical solution: A controllable wavelength laser simulation device for an optical module, related to the laser of the optical module, includes a resonant cavity unit, and also includes a PN semiconductor waveguide;
[0006] The resonant cavity unit has an annular structure, and a concave arc-shaped notch is formed on the outer wall of the resonant cavity unit. The PN semiconductor waveguide has an annular structure with the same outer diameter as that of the resonant cavity unit. The PN semiconductor waveguide is assembled with the notch in a fitting manner, and the PN semiconductor waveguide is horizontally fixedly connected to the resonant cavity unit to form a "Z" - shaped structure.
[0007] Further, the PN semiconductor waveguide includes a positive electrode, a negative electrode, a P - end semiconductor waveguide, and an N - end semiconductor waveguide. The P - end semiconductor waveguide is nested and fixed on the periphery of the N - end semiconductor waveguide. The positive electrode is fixedly attached to the outer wall surface of the P - end semiconductor waveguide, and the negative electrode is fixedly attached to the inner wall surface of the N - end semiconductor waveguide. The positive electrode and the negative electrode serve as the positive and negative poles of the laser and are respectively connected to the optical module circuit.
[0008] Further, the thicknesses of the positive electrode, the negative electrode, the P - end semiconductor waveguide, and the N - end semiconductor waveguide are equal to each other, and the cross - sectional width of the P - end semiconductor waveguide is equal to the cross - sectional width of the N - end semiconductor waveguide.
[0009] Further, it further includes an emission hole opened on the P-end semiconductor waveguide, and the aperture size of the emission hole is much smaller than the thickness size of the P-end semiconductor waveguide.
[0010] Further, the resonant cavity unit includes a P-end, a gain medium, and an N-end. The gain medium is sandwiched between the P-end and the N-end. Equal-sized notches are opened on the outer walls of the P-end, the gain medium, and the N-end. The P-end, the gain medium, and the N-end overlap, and the three are aligned and fixed based on the respective notches they have.
[0011] Further, the P-end, the gain medium, and the N-end are all in an annular structure with equal outer diameter and inner diameter sizes, and the thickness of the gain medium is greater than the thickness of the P-end or the N-end.
[0012] Further, the P-end is made of P-type germanium, and the N-end is made of N-type silicon.
[0013] Further, the P-end is made of P-type silicon, and the N-end is made of N-type germanium.
[0014] A simulation method for a controllable wavelength laser simulation device of an optical module includes the following steps:
[0015] S1: Connect the PN semiconductor waveguide to the optical module circuit, control the magnitudes of the currents input to the positive electrode and the negative electrode, and the refractive index of the waveguide can be correspondingly changed by using the plasma dispersion effect;
[0016] S2: When the refractive index is exactly equal to an integer multiple of the incident light wavelength value λ divided by the overall circular ring length value L of the PN semiconductor waveguide, after the light emitted by the laser passes through the circular ring of the PN semiconductor waveguide, it will be confined within the circular ring and circulate in the circular ring, and resonance will occur and it cannot escape. At this time, a specific wavelength within the circular ring will be emitted through the emission hole to form a laser with a specific wavelength;
[0017] S3: The light that does not satisfy the refractive index wavelength in S can escape from the circular ring of the PN semiconductor waveguide. This part of the light enters the resonant cavity unit after leaving the PN semiconductor waveguide, that is, this part of the escaping stray light is filtered out, and this part of the stray light can continue to excite the gain medium to generate photons.
[0018] The beneficial effects of the present invention are reflected in:
[0019] In the present invention, on the one hand, the output part of the laser adopts a ring-shaped PN semiconductor waveguide with a variable refractive index. By changing the magnitude of the input current, light of a specific required wavelength can be selected, maintaining the stability of the output wavelength of the laser and further improving the emission stability of the laser. On the other hand, the resonant cavity unit adopts a ring-shaped structure, and photons can simulate total internal reflection therein. Thus, the length of the gain medium can be indirectly increased infinitely, improving the utilization rate of photons. Moreover, the filtered stray light can continue to excite the gain medium to generate photons, further improving the working efficiency of the laser. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 is an axonometric view of the overall structure of an embodiment of the present invention.
[0021] Figure 2 is an axonometric view of the resonant cavity unit of an embodiment of the present invention.
[0022] Figure 3 is a schematic diagram of the disassembly of the resonant cavity unit of an embodiment of the present invention.
[0023] Figure 4 is a schematic diagram of the disassembly of the PN semiconductor waveguide of an embodiment of the present invention.
[0024] Figure 5 is an equivalent circuit diagram of the PN semiconductor waveguide of an embodiment of the present invention.
[0025] The labels of each component in the drawings are: 1, resonant cavity unit; 101, P terminal; 102, gain medium; 103, N terminal; 2, PN semiconductor waveguide; 201, positive electrode; 202, negative electrode; 203, P-terminal semiconductor waveguide; 204, N-terminal semiconductor waveguide; 3, notch; 4, emission hole. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0026] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. It should be noted that the electrical modules or components involved in the present invention are all available through purchase in the prior art.
[0027] See Figures 1 - 5 。
[0028] The present invention provides a controllable wavelength laser simulation device for an optical module, which relates to a laser of the optical module and includes a resonant cavity unit 1 and also includes a PN semiconductor waveguide 2;
[0029] The resonant cavity unit 1 has an annular structure. An inwardly concave arc-shaped notch 3 is formed on the outer wall of the resonant cavity unit 1. The PN semiconductor waveguide 2 has an annular structure with the same outer diameter as that of the resonant cavity unit 1. The PN semiconductor waveguide 2 is assembled in conformity with the notch 3, and the PN semiconductor waveguide 2 is horizontally and fixedly connected to the resonant cavity unit 1 to form an 8-shaped structure.
[0030] In the present invention, on the one hand, the output part of the laser uses a PN semiconductor waveguide with a variable refractive index and an annular structure. By changing the magnitude of the input current, the light of a specific wavelength required can be screened out, maintaining the stability of the output wavelength of the laser and further improving the emission stability of the laser. On the other hand, the resonant cavity unit has an annular structure, and photons can simulate total reflection therein, thereby indirectly increasing the length of the gain medium infinitely, improving the utilization rate of photons, and the filtered stray light can continue to excite the gain medium to generate photons, further improving the working efficiency of the laser.
[0031] In an embodiment, the PN semiconductor waveguide 2 includes a positive electrode 201, a negative electrode 202, a P-terminal semiconductor waveguide 203, and an N-terminal semiconductor waveguide 204. The P-terminal semiconductor waveguide 203 is nested and fixed on the periphery of the N-terminal semiconductor waveguide 204. The positive electrode 201 is fixedly attached to the outer wall surface of the P-terminal semiconductor waveguide 203, and the negative electrode 202 is fixedly attached to the inner wall surface of the N-terminal semiconductor waveguide 204. The positive electrode 201 and the negative electrode 202 serve as the positive and negative poles of the laser and are respectively connected to the optical module circuit. With such a design, the PN semiconductor waveguide 2 serves as the output part of the laser. According to the plasma dispersion effect, by changing the magnitude of the current input to the positive electrode 201 and the negative electrode 202, the refractive index of the annular PN semiconductor waveguide 2 can be changed, realizing the screening of light of different wavelengths and improving the stability of the output wavelength of the laser.
[0032] In an embodiment, the thicknesses of the positive electrode 201, the negative electrode 202, the P-terminal semiconductor waveguide 203, and the N-terminal semiconductor waveguide 204 are equal, and the cross-sectional width of the P-terminal semiconductor waveguide 203 is equal to the cross-sectional width of the N-terminal semiconductor waveguide 204. With such a design, the regularity of the structure of the PN semiconductor waveguide 2 is maintained, facilitating the smooth progress of the simulation experiment.
[0033] In an embodiment, an emission hole 4 is further formed in the P-terminal semiconductor waveguide 203, and the aperture of the emission hole 4 is much smaller than the thickness of the P-terminal semiconductor waveguide 203. With such a design, the light meeting the specific wavelength requirement is confined in the PN semiconductor waveguide 2 to circulate until resonance occurs and is emitted from the emission hole 4 to form a laser of a specific wavelength.
[0034] In one embodiment, the resonant cavity unit 1 includes a P terminal 101, a gain medium 102, and an N terminal 103. The gain medium 102 is clamped between the P terminal 101 and the N terminal 103. Equal-sized notches 3 are provided on the outer walls of the P terminal 101, the gain medium 102, and the N terminal 103. The P terminal 101, the gain medium 102, and the N terminal 103 overlap, and the three are aligned and fixed based on the notches 3 they each have. With this design, the resonant cavity unit 1 is closely spliced and cooperated with the PN semiconductor waveguide 2 to simulate the generation, utilization, and filtering of photons in the laser, jointly promoting the improvement of the stability and efficiency of the laser.
[0035] In one embodiment, the P terminal 101, the gain medium 102, and the N terminal 103 are all in a circular ring structure with equal outer diameters and equal inner diameters. The thickness of the gain medium 102 is greater than the thickness of the P terminal 101 or the N terminal 103. With this design, the resonant cavity unit 1 adopts a circular ring structure, and photons can simulate total internal reflection inside it, thereby indirectly infinitely increasing the length of the gain medium 102, improving the utilization rate of photons, and the filtered stray light can continue to excite the gain medium 102 to generate photons, further improving the working efficiency of the laser.
[0036] In one embodiment, the P terminal 101 is made of P-type germanium, and the N terminal 103 is made of N-type silicon. It meets the requirements of simulation tests and is easy to implement.
[0037] In another embodiment, the P terminal 101 is made of P-type silicon, and the N terminal 103 is made of N-type germanium. It meets the requirements of simulation tests and is easy to implement.
[0038] A simulation method for a controllable wavelength laser simulation device of an optical module includes the following steps:
[0039] S1: Connect the PN semiconductor waveguide 2 to the optical module circuit, control the magnitude of the current input to the positive electrode 201 and the negative electrode 202, and the refractive index of the waveguide can be correspondingly changed by using the plasma dispersion effect;
[0040] S2: When the refractive index is exactly equal to an integer multiple of the incident light wavelength value λ divided by the overall circular ring length value L of the PN semiconductor waveguide 2, the light emitted by the laser passes through the circular ring of the PN semiconductor waveguide 2 and will be confined within the circular ring and circulate and resonate in the circular ring and cannot escape. At this time, a specific wavelength within the circular ring will be emitted through the emission hole 4 to form a laser with a specific wavelength;
[0041] S3: The light that does not meet the refractive index wavelength in S2 can escape from the ring of the PN semiconductor waveguide 2. After leaving the PN semiconductor waveguide 2, this part of the light enters the resonant cavity unit 1, that is, this part of the stray light that escapes is filtered out, and this part of the stray light can continue to excite the gain medium 102 to generate photons.
[0042] It should be understood that the examples and embodiments described herein are only for illustration and are not intended to limit the present invention. Those skilled in the art can make various modifications or changes according to it. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.
Claims
1. A simulation method for a controllable wavelength laser simulation device of an optical module. The controllable wavelength laser simulation device relates to the laser of the optical module. The controllable wavelength laser simulation device includes a resonant cavity unit (1), and is characterized in that: It also includes a PN semiconductor waveguide (2); The resonant cavity unit (1) has an annular structure. An inward concave arc-shaped notch (3) is formed on the outer wall of the resonant cavity unit (1). The PN semiconductor waveguide (2) has an annular structure with an outer diameter equal to that of the resonant cavity unit (1). The PN semiconductor waveguide (2) is assembled in conformity with the notch (3), and the PN semiconductor waveguide (2) is horizontally and fixedly connected to the resonant cavity unit (1) to form an 8-shaped structure; The PN semiconductor waveguide (2) includes a positive electrode (201), a negative electrode (202), a P-end semiconductor waveguide (203), and an N-end semiconductor waveguide (204). The P-end semiconductor waveguide (203) is nested and fixed on the periphery of the N-end semiconductor waveguide (204). The positive electrode (201) is fixedly attached to the outer wall surface of the P-end semiconductor waveguide (203), and the negative electrode (202) is fixedly attached to the inner wall surface of the N-end semiconductor waveguide (204). The positive electrode (201) and the negative electrode (202) serve as the positive and negative poles of the laser and are respectively connected to the optical module circuit; It also includes an emission hole (4) formed in the P-end semiconductor waveguide (203). The aperture size of the emission hole (4) is much smaller than the thickness size of the P-end semiconductor waveguide (203); The resonant cavity unit (1) includes a P-end (101), a gain medium (102), and an N-end (103). The gain medium (102) is sandwiched between the P-end (101) and the N-end (103). The same-sized notches (3) are formed on the outer walls of the P-end (101), the gain medium (102), and the N-end (103). The P-end (101), the gain medium (102), and the N-end (103) overlap and are aligned and fixed with reference to the respective notches (3) they have; The simulation method includes the following steps: S1: Connect the PN semiconductor waveguide (2) to the optical module circuit, control the magnitudes of the currents input to the positive electrode (201) and the negative electrode (202), and the refractive index of the waveguide can be correspondingly changed by using the plasma dispersion effect; S2: When the refractive index is exactly equal to an integer multiple of the incident light wavelength value λ divided by the overall circular ring length value L of the PN semiconductor waveguide (2), the light emitted by the laser passes through the circular ring of the PN semiconductor waveguide (2) and will be confined within the circular ring and circulate in the circular ring, and resonance occurs and cannot escape. At this time, the specific wavelength within the circular ring will be emitted through the emission hole (4) to form a laser with a specific wavelength; S3: The light with a refractive index wavelength that does not satisfy the condition in S2 can escape from the circular ring of the PN semiconductor waveguide (2). This part of the light enters the resonant cavity unit (1) after leaving the PN semiconductor waveguide (2), that is, this part of the escaping stray light is filtered out, and this part of the stray light can continue to excite the gain medium (102) to generate photons.
2. The simulation method of the controllable wavelength laser simulation device of the optical module according to claim 1, characterized in that: The thicknesses of the positive electrode (201), the negative electrode (202), the P-terminal semiconductor waveguide (203), and the N-terminal semiconductor waveguide (204) are equal to each other, and the cross-sectional width of the P-terminal semiconductor waveguide (203) is equal to the cross-sectional width of the N-terminal semiconductor waveguide (204).
3. The simulation method of the controllable wavelength laser simulation device of the optical module according to claim 1, characterized in that: The P-terminal (101), the gain medium (102), and the N-terminal (103) form an annular structure with equal outer diameters and equal inner diameters, and the thickness of the gain medium (102) is greater than the thickness of the P-terminal (101) or the N-terminal (103).
4. The simulation method of the controllable wavelength laser simulation device of the optical module according to claim 1, characterized in that: The P-terminal (101) is made of P-type germanium, and the N-terminal (103) is made of N-type silicon.
5. The simulation method of the controllable wavelength laser simulation device of the optical module according to claim 1, characterized in that: The P-terminal (101) is made of P-type silicon, and the N-terminal (103) is made of N-type germanium.
Citation Information
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