A laser chip with a modulator, preparation method and optical module

Abstract

The application provides a laser chip with a modulator, a preparation method and an optical module, and comprises an N electrode layer, an N-type semiconductor material layer, an active layer, an upper waveguide layer and a P-type semiconductor material layer; further comprising: a first ridge waveguide groove penetrating through the N-type semiconductor material layer; a second ridge waveguide groove penetrating through the N-type semiconductor material layer, and a ridge waveguide is arranged between the first ridge waveguide groove and the second ridge waveguide groove; a first passivation layer covering the P-type semiconductor material layer on one side of the ridge waveguide and arranged above the first ridge waveguide groove; a second passivation layer covering the P-type semiconductor material layer on the other side of the ridge waveguide and arranged above the second ridge waveguide groove; a first P electrode layer arranged on the second passivation layer above the P-type semiconductor material layer; a second P electrode layer arranged on the ridge waveguide; and a suspended electrode suspendedly arranged on the second ridge waveguide groove and electrically connected with the first P electrode layer and the second P electrode layer. The high-speed performance and the optimization of modulation efficiency are combined.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of optical communication, in particular to a laser chip with a modulator, a preparation method and an optical module. BACKGROUND

[0002] With the rapid development of Internet of Things, big data and cloud computing technology, the data communication required by information interaction presents an explosive growth, and the optical fiber communication technology emerging as the times require has become the preferred technology for realizing high-speed information transmission. The related industry also has higher and higher requirements for the transmission rate of a single device. The laser with a high-speed band modulator is the most core component of future information technology, such as the laser with a high-speed band modulator based on III-V compound.

[0003] The laser with a high-speed band modulator based on III-V compound mainly includes a directly modulated laser (DML) with a distributed feedback (DFB), an externally modulated laser (EML) integrated with an electro-absorption modulator (EAM) and an externally modulated laser integrated with a Mach-Zehnder interferometer (MZI). In the past 10 years, the EML has been widely used in the optical communication industry: 10-80 kilometers and above in the transmission network, 10G PON OLT in the access network, 100G, 200G and 400G modules in the data center, and backhaul in the 5G network. The chip categories mainly include 10G, 25G and 56G EMLs, and the modulation modes are divided into 1-bit NRZ and 2-bit PAM4 applications.

[0004] The EML is usually monolithically integrated by a DFB laser and an EAM modulator, has a small size and a relatively simple manufacturing process, and is a very practical laser with a modulator in the field of optical communication technology. At present, the main obstacle for the EML to upgrade to a higher speed and higher efficiency lies in the overall high-speed circuit design and the overall optical field limitation design. However, the high-speed performance and the modulation efficiency of the EML are often contradictory in design. Generally, the high-speed performance of the EML is limited by the device capacitance, so the size needs to be reduced to improve the high-speed performance of the EML. However, reducing the size of the EML usually requires a reduction in the volume of the active region. However, since better optical confinement is required for the improvement of the modulation efficiency of the device, the reduction of the active region of the EML will affect the modulation efficiency of the device. SUMMARY

[0005] The embodiment of the present application provides a laser chip with a modulator, a preparation method and an optical module, which can better combine high-speed performance and modulation efficiency optimization.

[0006] In a first aspect, the present application provides a laser chip with a modulator for an optical module, comprising:

[0007] An N electrode layer located at the bottom;

[0008] An N-type semiconductor material layer arranged on the N electrode layer;

[0009] An active layer arranged on the N-type semiconductor material layer;

[0010] An upper waveguide layer arranged on the active layer;

[0011] A P-type semiconductor material layer arranged on the upper waveguide layer;

[0012] A first ridge waveguide groove penetrating from the top to the N-type semiconductor material layer;

[0013] A second ridge waveguide groove penetrating from the top to the N-type semiconductor material layer, and a ridge waveguide is arranged between the first ridge waveguide groove and the second ridge waveguide groove;

[0014] A first passivation layer covering the P-type semiconductor material layer arranged on one side of the ridge waveguide and arranged in the first ridge waveguide groove;

[0015] A second passivation layer covering the P-type semiconductor material layer arranged on the other side of the ridge waveguide and arranged in the second ridge waveguide groove;

[0016] A first P electrode layer arranged on the second passivation layer above the P-type semiconductor material layer;

[0017] A second P electrode layer arranged on the ridge waveguide;

[0018] A suspended electrode arranged in suspension on the second ridge waveguide groove, and electrically connected to the first P electrode layer at one end and electrically connected to the second P electrode layer at the other end.

[0019] In a second aspect, the present application provides a preparation method of a laser chip with a modulator, used for preparing the laser chip with a modulator in the first aspect, and the method comprises the following steps:

[0020] An active layer, an upper waveguide layer and a P-type semiconductor material layer are sequentially formed on one side of the N-type semiconductor material layer;

[0021] etching from the top of the P-type semiconductor material layer to the N-type semiconductor material layer to form a first ridge waveguide trench and a second ridge waveguide trench, the first ridge waveguide trench and the second ridge waveguide trench form a ridge waveguide therebetween;

[0022] a passivation layer is arranged above the P-type semiconductor material layer, in the first ridge waveguide trench and the second ridge waveguide trench;

[0023] the passivation layer on the top of the ridge waveguide is removed to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side of the ridge waveguide;

[0024] a first P electrode layer is formed on the second passivation layer, and a second P electrode layer is formed on the ridge waveguide;

[0025] a removable material is filled in the second ridge waveguide trench, an electrode is formed on the removable material and the electrode is electrically connected to the first P electrode layer and the second P electrode layer;

[0026] the removable material is removed to suspend the electrode to form a suspended electrode above the second ridge waveguide trench;

[0027] an N electrode layer is formed on the other side of the N-type semiconductor material layer.

[0028] In the laser chip with a modulator and the preparation method provided by the application, the bottom of the first ridge waveguide trench and the second ridge waveguide trench is located below the N-type semiconductor material layer of the active layer, that is, the first ridge waveguide trench and the second ridge waveguide trench penetrate the active region, so that the active layer is not continuous and complete, thereby forming a deep ridge waveguide structure; and the first passivation layer is arranged in the first ridge waveguide trench and the second passivation layer is arranged in the second ridge waveguide trench, so that the light field is more strongly limited in the active layer, thereby improving the proportion of the light field limited in the active layer. The proportion of the light field limited is an important parameter in the design of the laser chip with a modulator and the modulator, and the increase of the proportion is very beneficial to the modulation efficiency of the laser chip with a modulator. At the same time, the suspended electrode is adopted, the suspended electrode crosses the ridge waveguide trench, when the suspended electrode is used for electrical injection, the suspended electrode is suspended in the air to cross, the suspended electrode does not contact the passivation layer of the bottom and the sidewall of the ridge waveguide trench, thereby greatly reducing the parasitic capacitance generated when the electrode covers the bottom and the sidewall of the ridge waveguide trench, thereby improving the speed of the laser chip with a modulator. In the laser chip with a modulator and the preparation method provided by the application, the deep ridge waveguide structure is combined with the suspended electrode, the suspended electrode crosses the ridge waveguide trench, the device performance is improved by the deep ridge waveguide, the speed of the laser chip with a modulator is further improved, and the contradiction that more metal is needed to cover the deep ridge waveguide to increase the capacitance and reduce the speed is effectively avoided.

[0029] In a third aspect, the application provides a laser chip with a modulator for an optical module, comprising:

[0030] An N electrode layer at the bottom;

[0031] An N-type semiconductor material layer disposed on the N electrode layer;

[0032] An active layer disposed on the N-type semiconductor material layer;

[0033] An upper waveguide layer disposed on the active layer;

[0034] A P-type semiconductor material layer disposed on the upper waveguide layer;

[0035] A first ridge waveguide trench from the top to the P-type semiconductor material layer;

[0036] A second ridge waveguide trench from the top to the P-type semiconductor material layer, with a ridge waveguide disposed between the first ridge waveguide trench and the second ridge waveguide trench;

[0037] A first passivation layer covering the P-type semiconductor material layer on one side of the ridge waveguide and inside the first ridge waveguide trench;

[0038] A second passivation layer covering the P-type semiconductor material layer on the other side of the ridge waveguide and inside the second ridge waveguide trench;

[0039] A first P electrode layer disposed on the second passivation layer above the P-type semiconductor material layer;

[0040] A second P electrode layer disposed on the ridge waveguide;

[0041] A suspended electrode suspended on the second ridge waveguide trench, with one end electrically connected to the first P electrode layer and the other end electrically connected to the second P electrode layer.

[0042] In a fourth aspect, the application provides a method for preparing a laser chip with a modulator, for preparing the laser chip with a modulator of the third aspect, the method comprising:

[0043] Forming an active layer, an upper waveguide layer, and a P-type semiconductor material layer in sequence on one side of an N-type semiconductor material layer;

[0044] Etching from the top of the P-type semiconductor material layer to the P-type semiconductor material layer to form a first ridge waveguide trench and a second ridge waveguide trench, with a ridge waveguide formed between the first ridge waveguide trench and the second ridge waveguide trench;

[0045] Disposing a passivation layer above the P-type semiconductor material layer, inside the first ridge waveguide trench, and inside the second ridge waveguide trench;

[0046] removing the passivation layer on the top of the ridge waveguide to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side of the ridge waveguide;

[0047] forming a first P electrode layer on the second passivation layer and a second P electrode layer on the ridge waveguide;

[0048] filling a removable material in the second ridge waveguide trench, forming an electrode on the removable material and electrically connecting the first P electrode layer and the second P electrode layer;

[0049] removing the removable material to suspend the electrode to form a suspended electrode above the second ridge waveguide trench;

[0050] forming an N electrode layer on the other side of the N-type semiconductor material layer.

[0051] In the laser chip with a modulator and the preparation method provided in the application, the bottom of the first ridge waveguide trench and the second ridge waveguide trench is located in the P-type semiconductor material layer below the active layer, and a suspended electrode is used, which spans the ridge waveguide trench. When electrical injection is performed through the suspended electrode, the suspended electrode is suspended in the air to span, and the suspended electrode does not contact the passivation layer of the bottom and the sidewall of the ridge waveguide trench, thereby greatly reducing the parasitic capacitance generated when the electrode covers the bottom and the sidewall of the ridge waveguide trench, and achieving the effect of improving the speed of the laser chip with a modulator.

[0052] In a fifth aspect, the application provides a laser chip with a modulator, which is used in an optical module and includes:

[0053] an N electrode layer located at the bottom;

[0054] an N-type semiconductor material layer arranged on the N electrode layer;

[0055] an active layer arranged on the N-type semiconductor material layer;

[0056] an upper waveguide layer arranged on the active layer;

[0057] a P-type semiconductor material layer arranged on the upper waveguide layer;

[0058] a first ridge waveguide trench penetrating from the top to the N-type semiconductor material layer;

[0059] a second ridge waveguide trench penetrating from the top to the N-type semiconductor material layer, and a ridge waveguide is arranged between the first ridge waveguide trench and the second ridge waveguide trench;

[0060] a first passivation layer covering the P-type semiconductor material layer arranged on one side of the ridge waveguide and arranged in the first ridge waveguide trench;

[0061] a second passivation layer covering the P-type semiconductor material layer disposed on the other side of the ridge waveguide and within the second ridge waveguide trench;

[0062] a first P electrode layer disposed on the second passivation layer above the P-type semiconductor material layer;

[0063] a second P electrode layer disposed on the ridge waveguide;

[0064] a fourth P electrode layer disposed on the second passivation layer within the second ridge waveguide trench, one end of which is electrically connected to the first P electrode layer and the other end of which is electrically connected to the second P electrode layer.

[0065] In a sixth aspect, the application provides a method for preparing a laser chip with a modulator, for preparing the laser of the fifth aspect, the method comprising:

[0066] a N-type semiconductor material layer, an active layer, an upper waveguide layer and a P-type semiconductor material layer are sequentially formed on one side of the N-type semiconductor material layer;

[0067] a first ridge waveguide trench and a second ridge waveguide trench are etched from the top of the P-type semiconductor material layer to the N-type semiconductor material layer, and a ridge waveguide is formed between the first ridge waveguide trench and the second ridge waveguide trench;

[0068] a passivation layer is disposed above the P-type semiconductor material layer, within the first ridge waveguide trench and the second ridge waveguide trench;

[0069] the passivation layer on the top of the ridge waveguide is removed to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side of the ridge waveguide;

[0070] a first P electrode layer is formed on the second passivation layer, and a second P electrode layer is formed on the ridge waveguide above the P-type semiconductor material layer;

[0071] a fourth P electrode layer is formed on the second passivation layer within the second ridge waveguide trench to electrically connect the first P electrode layer and the second P electrode layer;

[0072] an N electrode layer is formed on the other side of the N-type semiconductor material layer.

[0073] The application provides a laser chip with a modulator and a preparation method.

[0074] In a seventh aspect, the application provides an optical module, comprising:

[0075] a circuit board;

[0076] a light emitting component electrically connected to the circuit board and configured to generate and output signal light, the light emitting component comprising a laser;

[0077] The laser comprises the laser chip with a modulator according to the first aspect, the third aspect or the fifth aspect.

[0078] or the laser chip with a modulator prepared by the preparation method according to the second aspect, the fourth aspect or the sixth aspect.

[0079] The application provides an optical module, which adopts the laser chip with a modulator provided in the above aspects, and the modulation efficiency of the optical module is improved by improving the modulation efficiency of the laser chip with a modulator. BRIEF DESCRIPTION OF DRAWINGS

[0080] In order to more clearly illustrate the technical solutions of the application, the drawings needed in the embodiments will be briefly introduced as follows. Obviously, for those skilled in the art, other drawings can also be obtained based on these drawings without any creative effort.

[0081] Figure 1 Fig. 1 is a schematic diagram of a connection relationship of an optical communication terminal;

[0082] Figure 2 Fig. 2 is a schematic diagram of an optical network terminal structure;

[0083] Figure 3 Fig. 3 is a schematic diagram of an optical module structure provided in an embodiment of the application;

[0084] Figure 4 Fig. 4 is a schematic diagram of an optical module exploded structure provided in an embodiment of the application;

[0085] Figure 5An internal structure diagram of an optical module provided by an embodiment of the present application;

[0086] Figure 6 An external structure diagram of an optical transmitting sub-module provided by an embodiment of the present application;

[0087] Figure 7 An internal structure diagram of an optical transmitting component provided by an embodiment of the present application, in which a tube base and a tube cap are separated;

[0088] Figure 8 An internal structure diagram of a laser device provided by an embodiment of the present application;

[0089] Figure 9 An internal structure diagram of a laser chip with a modulator provided by an embodiment of the present application;

[0090] Figure 10 A cross-sectional structure diagram of a laser chip with a modulator provided by an embodiment of the present application;

[0091] Figure 11 An internal structure diagram of a laser chip with a modulator provided by an embodiment of the present application, in which a traditional electrode is used;

[0092] Figure 12 An internal structure diagram of another laser chip with a modulator provided by an embodiment of the present application;

[0093] Figure 13 A cross-sectional structure diagram of another laser chip with a modulator provided by an embodiment of the present application;

[0094] Figure 14 An internal structure diagram of still another laser chip with a modulator provided by an embodiment of the present application;

[0095] Figure 15 A cross-sectional structure diagram of a third laser chip with a modulator provided by an embodiment of the present application. DETAILED DESCRIPTION

[0096] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those of ordinary skill in the art without any creative work, fall within the scope of protection of the present application.

[0097] One of the core links of optical fiber communication is the mutual conversion of optical and electrical signals. Optical fiber communication uses optical signals carrying information to transmit in information transmission equipment such as optical fibers / optical waveguides, and the passive transmission characteristics of light in optical fibers / optical waveguides can realize low-cost and low-loss information transmission; while the information processing equipment such as computers uses electrical signals, in order to establish information connection between the information transmission equipment such as optical fibers / optical waveguides and the information processing equipment such as computers, it is necessary to realize the mutual conversion of electrical and optical signals.

[0098] The optical module realizes the mutual conversion of optical and electrical signals in the field of optical fiber communication technology, and the mutual conversion of optical and electrical signals is the core function of the optical module. The optical module realizes electrical connection between the external host computer through the gold fingers on the internal circuit board of the optical module, and the main electrical connection includes power supply, I2C signal, data signal and ground, etc.; the electrical connection mode realized by the gold fingers has become the mainstream connection mode in the optical module industry, and on this basis, the definition of the pins on the gold fingers forms various industry protocols / specifications.

[0099] Figure 1 The figure shows the connection relationship of the optical communication terminal. As shown in Figure 1 , the connection of the optical communication terminal mainly includes the mutual connection among the optical network terminal 100, the optical module 200, the optical fiber 101 and the network cable 103;

[0100] One end of the optical fiber 101 is connected to a remote server, and one end of the network cable 103 is connected to a local information processing device. The connection between the local information processing device and the remote server is completed by the connection between the optical fiber 101 and the network cable 103; and the connection between the optical fiber 101 and the network cable 103 is completed by the optical network terminal 100 with the optical module 200.

[0101] The optical port of the optical module 200 is externally connected to the optical fiber 101, and a bidirectional optical signal connection is established with the optical fiber 101; the electrical port of the optical module 200 is externally connected to the optical network terminal 100, and a bidirectional electrical signal connection is established with the optical network terminal 100; the mutual conversion of optical and electrical signals is realized inside the optical module, so as to establish information connection between the optical fiber and the optical network terminal; specifically, the optical signal from the optical fiber is converted into an electrical signal by the optical module and input into the optical network terminal 100, and the electrical signal from the optical network terminal 100 is converted into an optical signal by the optical module and input into the optical fiber.

[0102] The optical network terminal has an optical module interface 102 for accessing the optical module 200 and establishing a bidirectional electrical signal connection with the optical module 200; the optical network terminal has a network cable interface 104 for accessing the network cable 103 and establishing a bidirectional electrical signal connection with the network cable 103; the optical module 200 and the network cable 103 are connected through the optical network terminal 100, specifically, the optical network terminal transmits signals from the optical module to the network cable and transmits signals from the network cable to the optical module, and the optical network terminal monitors the work of the optical module as the upper machine of the optical module.

[0103] So far, the remote server establishes a bidirectional signal transmission channel with the local information processing device through the optical fiber, the optical module, the optical network terminal and the network cable.

[0104] Common information processing devices include routers, switches, electronic computers, etc.; the optical network terminal is the upper machine of the optical module, which provides data signals to the optical module and receives data signals from the optical module, and common optical module upper machines also include optical line terminals, etc.

[0105] Figure 2 The optical network terminal is a structural schematic diagram. As shown in Figure 2 The optical network terminal 100 has a circuit board 105, and a cage 106 is arranged on the surface of the circuit board 105; an electrical connector is arranged inside the cage 106 for accessing the gold finger and other optical module electrical ports; a heat sink 107 is arranged on the cage 106, and the heat sink 107 has a fin and other protrusions to increase the heat dissipation area.

[0106] The optical module 200 is inserted into the optical network terminal, specifically: the electrical port of the optical module is inserted into the electrical connector inside the cage 106, and the optical port of the optical module is connected with the optical fiber 101.

[0107] The cage 106 is located on the circuit board, and the electrical connector on the circuit board is wrapped in the cage, so that the electrical connector is arranged inside the cage; the optical module is inserted into the cage, and the optical module is fixed by the cage; the heat generated by the optical module is conducted to the cage 106, and then diffused through the heat sink 107 on the cage.

[0108] The fifth generation mobile communication technology (5G) meets the growing demand for high-speed wireless transmission at present. The frequency spectrum used by 5G communication is much higher than that of 4G communication, which on the one hand brings a substantial increase in communication speed for 5G communication, but the transmission attenuation of the signal also increases relatively obviously.

[0109] 5G new service characteristics and higher index requirements pose new challenges to the bearer network architecture and each layer technical scheme, wherein the optical module as a physical layer basic unit of the 5G network also faces technical innovation and upgrading, which is mainly embodied in that the optical module applied to the 5G transmission needs to have two basic technical characteristics of high-speed transmission and low return loss. In order to meet the requirements of the optical module in the 5G communication network, an optical module is provided in the embodiments of the present application.

[0110] Figure 3 An optical module structure diagram is provided in the embodiments of the present application, Figure 4 An optical module exploded structure diagram is provided in the embodiments of the present application. As shown in Figure 3 、 Figure 4 The optical module 200 provided by the embodiments of the present application includes an upper shell 201, a lower shell 202, a circuit board 203, a round square tube body 300, an optical transmitting component 400 and an optical receiving component 500.

[0111] The upper shell 201 is covered on the lower shell 202 to form a wrapped cavity with two openings; the outer contour of the wrapped cavity generally presents a square body, specifically, the lower shell includes a main plate and two side plates located on both sides of the main plate and arranged perpendicularly to the main plate; the upper shell includes a cover plate, the cover plate is covered on the two side plates of the upper shell to form the wrapped cavity; the upper shell can also include two side walls located on both sides of the cover plate and arranged perpendicularly to the cover plate, the two side walls are combined with the two side plates to realize that the upper shell is covered on the lower shell.

[0112] The two openings can be two end openings (204, 205) in the same direction, or two openings in different directions; one of the openings is an electrical port 204, the gold fingers of the circuit board extend out of the electrical port 204 and are inserted into an upper machine such as an optical network terminal; the other opening is an optical port 205 for external fiber access; the optoelectronic devices such as the circuit board 203, the round square tube body 300, the optical transmitting component 400 and the optical receiving component 500 are located in the wrapped cavity formed by the upper and lower shells.

[0113] The assembly mode of combining the upper shell 201 and the lower shell 202 facilitates the installation of the devices such as the round square tube body 300, the optical transmitting component 400 and the optical receiving component 500 into the shell, and the upper shell 201 and the lower shell 202 form the outermost packaging protective shell of the optical module; the upper shell 201 and the lower shell 202 are generally made of metal material, which is beneficial to realize electromagnetic shielding and heat dissipation; generally, the shell of the optical module is not made into an integral component, so that the positioning components, heat dissipation and electromagnetic shielding components cannot be installed when assembling the circuit board and other devices, and it is also not conducive to production automation.

[0114] Generally, the optical module 200 further comprises an unlocking component on the outer wall of the wrapping cavity / lower shell 202, for realizing the fixed connection between the optical module and the host computer, or releasing the fixed connection between the optical module and the host computer.

[0115] The unlocking component has a clamping component matched with the cage of the host computer; pulling the end of the unlocking component can relatively move the unlocking component on the surface of the outer wall; the optical module is inserted into the cage of the host computer, and the optical module is fixed in the cage of the host computer by the clamping component of the unlocking component; by pulling the unlocking component, the clamping component of the unlocking component moves, and then the connection relationship between the clamping component and the host computer is changed, so as to release the clamping relationship between the optical module and the host computer, so that the optical module can be pulled out of the cage of the host computer.

[0116] The circuit board 203 is provided with circuit traces, electronic components (such as capacitors, resistors, transistors, MOS tubes) and chips (such as MCUs, clock data recovery CDR, power management chips, data processing chips DSP) and the like.

[0117] The circuit board 203 connects the electrical devices in the optical module together according to the circuit design through the circuit traces, so as to realize the power supply, electrical signal transmission and grounding and the like.

[0118] The circuit board 203 is generally a hard circuit board. Due to the relatively hard material of the hard circuit board, the hard circuit board can also realize the bearing function, such as that the hard circuit board can stably bear the chip; when the optical transceiver is located on the circuit board, the hard circuit board can also provide stable bearing; the hard circuit board can also be inserted into the electrical connector in the cage of the host computer, specifically, a metal pin / gold finger is formed on the surface of the end of one side of the hard circuit board, for connecting with the electrical connector; these are not convenient for the flexible circuit board to realize.

[0119] The flexible circuit board is also used in part of the optical modules, as a supplement to the hard circuit board; the flexible circuit board is generally used in cooperation with the hard circuit board, such as that the flexible circuit board is used to connect between the hard circuit board and the optical transceiver.

[0120] The optical transmitting component and the optical receiving component can be collectively referred to as an optical sub-module. For example, Figure 4As shown, the optical module provided by the embodiment includes a round-square tube 300, an optical transmitting component 400, and an optical receiving component 500. The optical transmitting component 400 is arranged on the round-square tube 300 and coaxial with a fiber adapter of the round-square tube 300, and is configured to generate and output signal light. The optical receiving component 500 is arranged on a side of the round-square tube 300 and is not coaxial with the fiber adapter, and is configured to receive signal light from outside the optical module. The fiber adapter is configured to realize connection between the optical module and an external optical fiber, and a lens assembly is usually arranged in the round-square tube 300 and is configured to change a propagation direction of the signal light output by the optical transmitting component 400 or the signal light input by the external optical fiber. The optical transmitting component 400 and the optical receiving component 500 are physically separated from a circuit board 203, and thus it is difficult to directly connect the optical transmitting component 400 and the optical receiving component 500 to the circuit board 203. Therefore, in the embodiment, the optical transmitting component 400 and the optical receiving component 500 are electrically connected through flexible circuit boards. Figure 3 and Figure 4 In addition to the structure shown in Figure 3 and Figure 4 , other assembly structures can also be used, for example, the optical transmitting component 400 and the optical receiving component 500 are arranged on different tube bodies. The embodiment only takes the structure shown in

[0121] The accompanying Figure 5 is a schematic diagram of an internal structure of an optical module provided by the embodiment. As shown in Figure 5 , the internal structure of the optical module 200 includes a round-square tube 300, an optical transmitting component 400, and an optical receiving component 500. The optical transmitting component 400 is arranged on the round-square tube 300 and coaxial with a fiber adapter of the round-square tube 300, and the optical receiving component 500 is arranged on a side of the round-square tube 300 and is not coaxial with the fiber adapter. In the embodiment, the optical receiving component 500 can be coaxial with the fiber adapter, and the optical transmitting component 400 can be not coaxial with the fiber adapter. The optical transmitting component 400 and the optical receiving component 500 are arranged through the round-square tube 300, which is convenient for realizing control of a signal light transmission path and realizing compact design of the optical module, reducing the space occupied by the signal light transmission path, and the like. In addition, with the development of wavelength division multiplexing technology, more than one optical transmitting component 400 and optical receiving component 500 are arranged on the round-square tube 300 in some optical modules.

[0122] In some embodiments, a transmissive-refractive lens is arranged in the round-square tube 300, which is configured to change a propagation direction of signal light to be received by the optical receiving component 500 or a propagation direction of signal light generated by the optical transmitting component 400, so as to facilitate output of the signal light generated by the optical transmitting component 400 or reception of the signal light by the optical receiving component 500.

[0123] Figure 6A structure diagram of a light emitting component is provided in the embodiment of the present application. As shown in Figure 6 The light emitting component 400 provided in the embodiment includes a tube base 410, a tube cap 420, and other devices arranged in the tube cap 420 and the tube base 410. The tube cap 420 is arranged at one end of the tube base 410. The tube base 410 includes a plurality of tube pins. The tube pins are used to realize the electrical connection between the flexible circuit board and other electrical devices in the light emitting component 400, and further realize the electrical connection between the light emitting component 400 and the circuit board 203. The embodiment only takes the structure shown in Figure 6 as an example.

[0124] Figure 7 A structure diagram of a light emitting component in which the tube base and the tube cap are separated is provided in the embodiment of the present application. As shown in Figure 7 The light emitting component 400 includes a laser device 430. The laser device 430 generates signal light, and the generated signal light transmits through the tube cap 420. Figure 7 The laser device 430 shown in

[0125] Figure 8 A structure diagram of a laser device is provided in the embodiment of the present application. As shown in Figure 8 The laser device 430 includes a laser chip 600 with a modulator and a ceramic substrate 431. The upper surface of the ceramic substrate 431 is paved with a circuit. The laser chip 600 with the modulator is connected to the corresponding circuit on the ceramic substrate 431 through wire bonding. The ceramic substrate 431 and the bonding wire between the laser chip 600 with the modulator and the ceramic substrate 431 form a packaging structure. In the embodiment, the structure of the laser device 430 is not limited to the structure shown in Figure 8 . The laser device can also be in other structural forms. In addition, in the optical module provided in the embodiment, the use form of the laser chip 600 with the modulator is not limited to Figure 8 . The embodiment only takes Figure 8 as an example. The laser chip 600 with the modulator can also be directly attached to the circuit board 203 or other packaging forms.

[0126] In the embodiment, the high-speed performance and modulation efficiency of the laser chip 600 with the modulator are one of the important factors affecting the transmission rate of the optical module. In order to improve the transmission rate of the optical module, the embodiment provides a laser chip 600 with a modulator. The laser chip 600 with the modulator provided in the embodiment is used to combine the optimization of the high-speed performance and the modulation efficiency of the laser chip with the modulator.

[0127] Figure 9 A structure diagram of a laser chip with a modulator is provided in the embodiment of the present application, Figure 9The basic structure of the laser chip 600 with a modulator in some embodiments of the present application is shown. As shown in Figure 9 The laser chip 600 with a modulator provided by the embodiment includes an N electrode layer 610, an N-type semiconductor material layer 620, an active layer 630, an upper waveguide layer 640, and a P-type semiconductor material layer 650. The N electrode layer 610 is arranged on one side of the N-type semiconductor material layer 620, and the N electrode layer 610 is the bottom of the laser chip 600 with a modulator. The active layer 630 is arranged on the other side of the N-type semiconductor material layer 620. The upper waveguide layer 640 is arranged above the active layer 630. The P-type semiconductor material layer 650 is arranged above the upper waveguide layer 640.

[0128] Figure 10 The cross-sectional structure of the laser chip with a modulator provided by the embodiment is shown. As shown in Figure 9 and 10 The laser chip 600 with a modulator provided by the embodiment includes a first ridge waveguide groove 671 and a second ridge waveguide groove 672. The first ridge waveguide groove 671 and the second ridge waveguide groove 672 form a ridge waveguide 670. The bottom of the first ridge waveguide groove 671 and the bottom of the second ridge waveguide groove 672 are located on the upper waveguide layer 640 on the active layer 630. The top of the ridge waveguide 670 is a window for current injection. The first ridge waveguide groove 671 and the second ridge waveguide groove 672 are formed by etching. The etching Figure 9 and 10 When etching the first ridge waveguide groove 671 and the second ridge waveguide groove 672 in the first ridge waveguide groove 671 and the second ridge waveguide groove 672, the active layer 630 is not etched to ensure the integrity of the active layer 630 to form the structure of the shallow ridge waveguide.

[0129] As shown in Figure 9 and 10 The laser chip 600 with a modulator provided by the embodiment further includes a first passivation layer 661 and a second passivation layer 662. The first passivation layer 661 covers the P-type semiconductor material layer 650 arranged on one side of the ridge waveguide 670 and is arranged in the first ridge waveguide groove 671. The second passivation layer 662 covers the P-type semiconductor material layer 650 arranged on the other side of the ridge waveguide 670 and is arranged in the second ridge waveguide groove 672. The second P electrode layer 681 is arranged above the ridge waveguide 670. The first P electrode layer 683 is arranged on the second passivation layer 662 above the P-type semiconductor material layer 650. The floating electrode 682 is suspended above the second ridge waveguide groove 672. The floating electrode 682 is electrically connected to the first P electrode layer 683 and the second P electrode layer 681.

[0130] In the embodiment, the N-type semiconductor material layer 620 can be formed by epitaxial growth of N-type semiconductor material, the active layer 630 can be formed by epitaxial growth of aluminum gallium indium arsenic multi-quantum well material on the N-type semiconductor material layer 620, the upper waveguide layer 640 can be formed by epitaxial growth of AlGaInAs material on the active layer 630, and the P-type semiconductor material layer 650 can be formed by epitaxial growth of P-type semiconductor material on the upper waveguide layer 640; the first passivation layer 661 and the second passivation layer 662 can be formed by using silicon dioxide, silicon nitride, silicon oxynitride, or organic material; the N electrode layer 610 and the first P electrode layer 683, the second P electrode layer 681, and the suspended electrode 682 can be formed by metal evaporation; and the first ridge waveguide trench 671 and the second ridge waveguide trench 672 can be formed by wet etching, dry etching, or a combination of wet etching and dry etching.

[0131] In some embodiments of the present application, as shown in FIG. 6B, the laser chip 600 with a modulator provided by the embodiment further includes a third P electrode layer 684, the third P electrode layer 684 is arranged on the ridge waveguide 670, and the upper waveguide layer 640 includes a P-type grating layer, so that a DFB laser is formed in the coverage area of the third P electrode layer 684; and an electro-absorption modulator is formed in the coverage area of the second P electrode layer 681, so that the laser chip 600 with a modulator provided by the present application is an EML. Figure 9

[0132] As shown in FIG. 6C, the laser chip with a modulator provided by the embodiment is a structure diagram of a laser chip with a modulator in a traditional electrode form, which is different from the structure of the laser chip 600 with a modulator shown in FIG. 6B in that an electrode 685 is arranged between the second P electrode layer 681 on the ridge waveguide 670 and the first P electrode layer 683 on the second passivation layer 662, the electrode 685 is in contact with the second passivation layer 662 on the bottom and sidewall of the second ridge waveguide trench 672, and the traditional electrode form is convenient to manufacture. Figure 11 Figure 10 As shown in FIG. 6D, in the laser chip with a modulator provided by the embodiment, since the electrode 685 is in contact with the second passivation layer 662 on the bottom and sidewall of the second ridge waveguide trench 672, the greater the contact area of the electrode 685 with the bottom and sidewall of the second ridge waveguide trench 672, the higher the parasitic capacitance generated during electrical injection. Figure 11

[0133] ​​In the laser chip 600 with the modulator provided by the embodiment, the floating electrode 682 is used to electrically connect the first P electrode layer 683 and the second P electrode layer 681, the floating electrode 682 crosses the second ridge waveguide groove 672 without contacting the second passivation layer 662 on the bottom and sidewall of the second ridge waveguide groove 672, and thus when the floating electrode 682 is used to electrically inject the ridge waveguide 670, the floating electrode 682 does not contact the second passivation layer 662 on the bottom and sidewall of the second ridge waveguide groove 672. Therefore, compared with the laser chip with the modulator using the traditional electrode structure, the laser chip 600 with the modulator provided by the embodiment greatly reduces the parasitic capacitance generated when the electrode covers the bottom and sidewall of the ridge waveguide groove, and achieves the effect of improving the speed of the laser chip 600 with the modulator.

[0134] In order to facilitate the preparation of the laser chip 600 with the modulator provided by the above-mentioned embodiment, the application further provides a laser chip with a modulator preparation method for preparing the laser chip 600 with the modulator in the above-mentioned embodiment. The laser chip preparation method provided by the embodiment of the application comprises the following steps.

[0135] An active layer, an upper waveguide layer and a P-type semiconductor material layer are sequentially formed on one side of an N-type semiconductor material layer;

[0136] A first ridge waveguide groove and a second ridge waveguide groove are etched from the top of the P-type semiconductor material layer to the P-type semiconductor material layer, and a ridge waveguide is formed between the first ridge waveguide groove and the second ridge waveguide groove;

[0137] A passivation layer is arranged above the P-type semiconductor material layer, in the first ridge waveguide groove and the second ridge waveguide groove;

[0138] The passivation layer on the top of the ridge waveguide is removed to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side of the ridge waveguide;

[0139] A first P electrode layer is formed on the second passivation layer, and a second P electrode layer is formed on the ridge waveguide;

[0140] A removable material is filled in the second ridge waveguide groove, an electrode is formed on the removable material, and the electrode is electrically connected to the first P electrode layer and the second P electrode layer;

[0141] The removable material is removed to suspend the electrode to form a floating electrode above the second ridge waveguide groove;

[0142] An N electrode layer is formed on the other side of the N-type semiconductor material layer.

[0143] In the process of forming the floating electrode 682, a removable material (e.g. photoresist) needs to be filled in the second ridge waveguide trench before the electrode is evaporated. When the electrode is evaporated to form the floating electrode 682, the electrode does not fall into the second ridge waveguide trench but falls on the removable material. After the electrode is evaporated, the removable material is removed to form the floating electrode 682, which spans above the trench.

[0144] Figure 12 Another structure diagram of a laser chip with a modulator provided by an embodiment of the present application is shown in FIG. 6B. Figure 12 The basic structure of the laser chip 600 with a modulator in some embodiments of the present application is shown in FIG. 6A. Figure 12 As shown in FIG. 6A, the laser chip 600 with a modulator provided by the embodiment also includes an N electrode layer 610, an N-type semiconductor material layer 620, an active layer 630, an upper waveguide layer 640 and a P-type semiconductor material layer 650, which are arranged in the same way as shown in FIG. 5A. Figure 12 Figure 9 The structure of the laser chip 600 with a modulator shown in FIG. 6A is the same as that shown in FIG. 5A.

[0145] Figure 13 Another structure diagram of a laser chip with a modulator provided by an embodiment of the present application is shown in FIG. 6B. Figure 12 13 As shown in FIG. 6B, the laser chip 600 with a modulator provided by the embodiment also includes a first ridge waveguide trench 671 and a second ridge waveguide trench 672, which form a ridge waveguide 670 therebetween. However, the bottom of the first ridge waveguide trench 671 and the bottom of the second ridge waveguide trench 672 in the embodiment are located in the N-type semiconductor material layer 620 below the active layer 630. The first ridge waveguide trench 671 and the second ridge waveguide trench 672 shown in FIG. 6B are etched through the active layer 630, so that the active layer 630 is no longer complete to form a deep ridge waveguide structure. Figure 12 13

[0146] As shown in FIG. 6B, the laser chip 600 with a modulator provided by the embodiment also includes a first ridge waveguide trench 671 and a second ridge waveguide trench 672, which form a ridge waveguide 670 therebetween. However, the bottom of the first ridge waveguide trench 671 and the bottom of the second ridge waveguide trench 672 in the embodiment are located in the N-type semiconductor material layer 620 below the active layer 630. The first ridge waveguide trench 671 and the second ridge waveguide trench 672 shown in FIG. 6B are etched through the active layer 630, so that the active layer 630 is no longer complete to form a deep ridge waveguide structure. Figure 12 13 ​​​​​As shown, the laser chip 600 with a modulator provided in the embodiment also includes a first passivation layer 661 and a second passivation layer 662; the first passivation layer 661 covers the P-type semiconductor material layer 650 disposed on one side of the ridge waveguide 670 and inside the first ridge waveguide trench 671; the second passivation layer 662 covers the P-type semiconductor material layer 650 disposed on the other side of the ridge waveguide 670 and inside the second ridge waveguide trench 672. A second P electrode layer 681 is disposed above the ridge waveguide 670, a first P electrode layer 683 is disposed on the second passivation layer 662 above the P-type semiconductor material layer 650, a fourth P electrode layer 686 is laid inside the second ridge waveguide trench 672, and the fourth P electrode layer 686 is electrically connected to the first P electrode layer 683 and the second P electrode layer 681. In the embodiment, the fourth P electrode layer 686 is in contact with the second passivation layer 662 on the bottom and sidewall of the second ridge waveguide trench 672.

[0147] Figure 12 and 13 The laser chip 600 with a modulator shown in FIG. 6 is different from the laser chip 600 with a modulator shown in FIG. 5 in that, Figure 9 Figure 12 and 13 In the laser chip 600 with a modulator shown in FIG. 6, the fourth P electrode layer 686 is laid inside the second ridge waveguide trench 672 to electrically connect the first P electrode layer 683 and the second P electrode layer 681, and the first ridge waveguide trench 671 and the second ridge waveguide trench 672 are etched to below the active layer 630, so that the active layer 630 is no longer continuous and complete. However, in the laser chip 600 with a modulator provided in the embodiment, the first ridge waveguide trench 671 and the second ridge waveguide trench 672 are etched through the active layer 630, so that the active layer 630 is no longer continuous and complete, and the optical field is more strongly limited in the active layer 630, thereby improving the proportion of the optical field limited in the active layer 630. The proportion of the optical field limited is an important parameter in the design of the laser and the modulator, and the increase in the proportion is very beneficial to the modulation efficiency of the laser. For the DML, the increase in the proportion of the optical field limited directly increases the resonant frequency, thereby increasing the bandwidth of the device and the modulation rate. For the EML, the increase in the proportion of the optical field limited directly increases the efficiency of the optical field absorbed, thereby increasing the extinction ratio under the same voltage swing. For the MZ modulator, the increase in the proportion of the optical field limited directly increases the change in the overall effective refractive index with the change in the voltage, thereby improving the phase modulation efficiency. Therefore, etching the first ridge waveguide trench 671 and the second ridge waveguide trench 672 through the active layer 630 in the laser chip 600 with a modulator can improve the speed of the laser chip with a modulator on the basis of the traditional electrode structure form.

[0148] In some embodiments of the present application, as shown in FIG. 7, Figure 12 ​As shown, the laser chip 600 provided by the embodiment has a modulator, and further includes a third P electrode layer 684 disposed on the ridge waveguide 670. The P-type grating layer is included in the upper waveguide layer 640, so that a DFB laser is formed in the coverage area of the third P electrode layer 684. The coverage area of the second P electrode layer 681 forms an electro-absorption modulator. Thus, the laser chip 600 provided by the embodiment has a modulator, and is an EML.

[0149] To facilitate the preparation of the laser chip 600 provided by the above embodiment, the application further provides a laser chip preparation method with a modulator, which is used for the preparation of the laser chip 600 with a modulator in the above embodiment. The laser chip preparation method provided by the embodiment of the application comprises the following steps.

[0150] A N-type semiconductor material layer is formed on one side of the N-type semiconductor material layer, and an active layer, an upper waveguide layer and a P-type semiconductor material layer are sequentially formed on the N-type semiconductor material layer.

[0151] A first ridge waveguide groove and a second ridge waveguide groove are etched from the top of the P-type semiconductor material layer to the N-type semiconductor material layer, and a ridge waveguide is formed between the first ridge waveguide groove and the second ridge waveguide groove.

[0152] A passivation layer is arranged above the P-type semiconductor material layer and in the first ridge waveguide groove and the second ridge waveguide groove.

[0153] The passivation layer on the top of the ridge waveguide is removed to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side of the ridge waveguide.

[0154] A first P electrode layer is formed on the second passivation layer, and a second P electrode layer is formed on the ridge waveguide above the P-type semiconductor material layer.

[0155] A fourth P electrode layer is formed on the second passivation layer in the second ridge waveguide groove to electrically connect the first P electrode layer and the second P electrode layer.

[0156] An N electrode layer is formed on the other side of the N-type semiconductor material layer.

[0157] Figure 14 A third laser chip with a modulator provided by the embodiment of the application is shown in the structure diagram, Figure 12 The basic structure of the laser chip 600 with a modulator in some embodiments of the application is shown. Figure 12 As shown, the laser chip 600 provided by the embodiment has a modulator, and further includes a third P electrode layer 684 disposed on the ridge waveguide 670. The P-type grating layer is included in the upper waveguide layer 640, so that a DFB laser is formed in the coverage area of the third P electrode layer 684. The coverage area of the second P electrode layer 681 forms an electro-absorption modulator. Thus, the laser chip 600 provided by the embodiment has a modulator, and is an EML. Figure 14 Figure 9 ​The structure in the laser chip 600 with modulator shown is the same.

[0158] Figure 15 A third cross-sectional structure of a laser chip with modulator is provided in the embodiments of the present application. As shown in Figure 12 and 13 The laser chip 600 with modulator provided in the embodiments also has a first ridge waveguide groove 671 and a second ridge waveguide groove 672, and the ridge waveguide 670 is formed between the first ridge waveguide groove 671 and the second ridge waveguide groove 672. However, the bottom of the first ridge waveguide groove 671 and the bottom of the second ridge waveguide groove 672 in the embodiments are located below the N-type semiconductor material layer 620. When the first ridge waveguide groove 671 and the second ridge waveguide groove 672 shown in Figure 14 and 15 are etched, the active layer 630 is etched through, so that the active layer 630 is no longer complete, to form the structure of the deep ridge waveguide.

[0159] As shown in Figure 14 and 15 The laser chip 600 with modulator provided in the embodiments also includes a first passivation layer 661 and a second passivation layer 662; the first passivation layer 661 covers the P-type semiconductor material layer 650 on one side of the ridge waveguide 670 and is arranged in the first ridge waveguide groove 671; the second passivation layer 662 covers the P-type semiconductor material layer 650 on the other side of the ridge waveguide 670 and is arranged in the second ridge waveguide groove 672. The second P electrode layer 681 is arranged above the ridge waveguide 670, the first P electrode layer 683 is arranged on the second passivation layer 662 above the P-type semiconductor material layer 650, the fourth P electrode layer 686 is arranged in the second ridge waveguide groove 672, the fourth P electrode layer 686 is electrically connected to the first P electrode layer 683 and the second P electrode layer 681, the suspended electrode 682 is suspended above the second ridge waveguide groove 672, and the suspended electrode 682 is electrically connected to the first P electrode layer 683 and the second P electrode layer 681.

[0160] In the laser chip 600 with a modulator provided in the embodiment, the first P electrode layer 683 and the second P electrode layer 681 are electrically connected by the floating electrode 682, the floating electrode 682 crosses the second ridge waveguide trench 672 without being in contact with the second passivation layer 662 on the bottom and sidewall of the second ridge waveguide trench 672, and then when the floating electrode 682 is used for electrical injection to the ridge waveguide 670, the floating electrode 682 is not in contact with the second passivation layer 662 on the bottom and sidewall of the second ridge waveguide trench 672. At the same time, the first ridge waveguide trench 671 and the second ridge waveguide trench 672 are etched through the active layer 630, so that the active layer 630 is no longer continuous and complete, so that the light field is more strongly limited in the active layer 630, and the proportion of the light field limited in the active layer 630 is improved, which is an important parameter in the design of the laser and the modulator, and the proportion is increased, which is very beneficial to the modulation efficiency of the laser. Therefore, in the laser chip 600 with a modulator provided in the embodiment, the floating electrode 682 and the first ridge waveguide trench 671 and the second ridge waveguide trench 672 etched through the active layer 630 are combined, so that the floating electrode 682 crosses the second ridge waveguide trench 672, the device performance of the deep ridge waveguide is improved, the speed of the laser chip with a modulator is further improved, and the contradiction that the deep ridge waveguide needs more metal coverage to increase the capacitance and reduce the speed is effectively avoided.

[0161] In some embodiments of the present application, as shown in Figure 14 The laser chip 600 with a modulator provided in the embodiment further includes a third P electrode layer 684, the third P electrode layer 684 is arranged on the ridge waveguide 670, and the P-type grating layer is included in the upper waveguide layer 640, so that the DFB laser is formed in the coverage area of the third P electrode layer 684; and the second P electrode layer 681 forms an electro-absorption modulator, and then the laser chip 600 with a modulator provided in the present application is an EML.

[0162] In order to facilitate the preparation of the laser chip 600 with a modulator provided in the above embodiment, the present application further provides a laser chip preparation method with a modulator, which is used for the preparation of the laser chip 600 with a modulator in the above embodiment. The laser chip preparation method with a modulator provided in the embodiment of the present application comprises the following steps.

[0163] The active layer, the upper waveguide layer and the P-type semiconductor material layer are sequentially formed on one side of the N-type semiconductor material layer;

[0164] The first ridge waveguide trench and the second ridge waveguide trench are etched from the top of the P-type semiconductor material layer to the N-type semiconductor material layer, and the ridge waveguide is formed between the first ridge waveguide trench and the second ridge waveguide trench;

[0165] A passivation layer is disposed above the P-type semiconductor material layer, in the first ridge waveguide trench and the second ridge waveguide trench;

[0166] The passivation layer on the top of the ridge waveguide is removed to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side of the ridge waveguide;

[0167] A first P electrode layer is formed on the second passivation layer, and a second P electrode layer is formed on the ridge waveguide;

[0168] The second ridge waveguide trench is filled with a removable material, an electrode is formed on the removable material and the electrode is electrically connected to the first P electrode layer and the second P electrode layer;

[0169] The removable material is removed to suspend the electrode to form a suspended electrode above the second ridge waveguide trench;

[0170] An N electrode layer is formed on the other side of the N-type semiconductor material layer.

[0171] Finally, it should be noted that: the embodiments are described in a progressive manner, and different parts can be referred to each other; in addition, the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A laser chip with a modulator, characterized in that: For optical modules, including: N-electrode layer at the bottom; An N-type semiconductor material layer is provided on the N-electrode layer; an active layer, disposed on the N-type semiconductor material layer; an upper waveguide layer, disposed on the active layer; A P-type semiconductor material layer is provided on the upper waveguide layer; A first ridge waveguide trench, extending from the top to the N-type semiconductor material layer; a second ridge waveguide trench, extending from the top to the N-type semiconductor material layer, with a ridge waveguide disposed between the second ridge waveguide trench and the first ridge waveguide trench; a first passivation layer covering the P-type semiconductor material layer on one side of the ridge waveguide and the first ridge waveguide groove; A second passivation layer is provided covering the P-type semiconductor material layer on the other side of the ridge waveguide and in the second ridge waveguide groove; a first P-electrode layer, disposed on the second passivation layer above the P-type semiconductor material layer; a second P-electrode layer, disposed on the ridge waveguide; The suspended electrode is suspended on the second ridge waveguide groove, with one end electrically connected to the first P-electrode layer and the other end electrically connected to the second P-electrode layer.

2. The laser chip with a modulator according to claim 1, characterized in that The upper waveguide layer includes a P-type grating layer; The laser chip with a modulator further includes: A third P-electrode layer is arranged on the ridge waveguide and located above the P-type grating layer, one end of which is arranged on the first passivation layer and extends to above the P-type semiconductor material layer on one side of the ridge waveguide, and the other end of which is arranged on the second passivation layer and extends to above the P-type semiconductor material layer on one side of the ridge waveguide.

3. A laser chip with a modulator, characterized in that: For optical modules, including: N-electrode layer at the bottom; An N-type semiconductor material layer is provided on the N-electrode layer; an active layer, disposed on the N-type semiconductor material layer; an upper waveguide layer, disposed on the active layer; A P-type semiconductor material layer is provided on the upper waveguide layer; a first ridge waveguide trench extending from the top to the P-type semiconductor material layer; a second ridge waveguide trench, extending from the top to the P-type semiconductor material layer, with a ridge waveguide disposed between the second ridge waveguide trench and the first ridge waveguide trench; a first passivation layer covering the P-type semiconductor material layer on one side of the ridge waveguide and the first ridge waveguide groove; A second passivation layer is provided covering the P-type semiconductor material layer on the other side of the ridge waveguide and in the second ridge waveguide groove; a first P-electrode layer, disposed on the second passivation layer above the P-type semiconductor material layer; a second P-electrode layer, disposed on the ridge waveguide; The suspended electrode is suspended on the second ridge waveguide groove, with one end electrically connected to the first P-electrode layer and the other end electrically connected to the second P-electrode layer.

4. The laser chip with a modulator according to claim 3, characterized in that The upper waveguide layer includes a P-type grating layer; The laser chip with a modulator further includes: A third P-electrode layer is arranged on the ridge waveguide, with one end arranged on the first passivation layer and extending to above the P-type semiconductor material layer on one side of the ridge waveguide, and the other end arranged on the second passivation layer and extending to above the P-type semiconductor material layer on one side of the ridge waveguide.

5. A method for preparing a laser chip with a modulator, characterized in that: The method for preparing the laser chip with a modulator according to claim 1 comprises: An active layer, an upper waveguide layer and a P-type semiconductor material layer are sequentially formed on one side of the N-type semiconductor material layer; Etching from the top of the P-type semiconductor material layer to the N-type semiconductor material layer to form a first ridge waveguide trench and a second ridge waveguide trench, wherein a ridge waveguide is formed between the first ridge waveguide trench and the second ridge waveguide trench; Disposing a passivation layer above the P-type semiconductor material layer and in the first ridge waveguide trench and the second ridge waveguide trench; removing the passivation layer on the top of the ridge waveguide to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side; forming a first P-electrode layer on the second passivation layer and forming a second P-electrode layer on the ridge waveguide; Filling the second ridge waveguide groove with a removable material, forming an electrode on the removable material and electrically connecting the first P-electrode layer and the second P-electrode layer; removing the removable material to suspend the electrode, thereby forming a suspended electrode above the second ridge waveguide groove; An N-electrode layer is formed on the other side of the N-type semiconductor material layer.

6. A method for preparing a laser chip with a modulator, characterized in that: The method for preparing the laser chip with a modulator according to claim 3 comprises: An active layer, an upper waveguide layer and a P-type semiconductor material layer are sequentially formed on one side of the N-type semiconductor material layer; Etching from the top of the P-type semiconductor material layer to the P-type semiconductor material layer to form a first ridge waveguide trench and a second ridge waveguide trench, wherein a ridge waveguide is formed between the first ridge waveguide trench and the second ridge waveguide trench; Disposing a passivation layer above the P-type semiconductor material layer and in the first ridge waveguide trench and the second ridge waveguide trench; removing the passivation layer on the top of the ridge waveguide to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side; forming a first P-electrode layer on the second passivation layer and forming a second P-electrode layer on the ridge waveguide; Filling the second ridge waveguide groove with a removable material, forming an electrode on the removable material and electrically connecting the first P-electrode layer and the second P-electrode layer; removing the removable material to suspend the electrode, thereby forming a suspended electrode above the second ridge waveguide groove; An N-electrode layer is formed on the other side of the N-type semiconductor material layer.

7. An optical module, characterized in that: include: circuit boards; a light emitting component, electrically connected to the circuit board, for generating and outputting signal light, including a laser; Wherein, the laser comprises the laser chip with a modulator according to any one of claims 1 to 4 or the laser chip with a modulator prepared by the preparation method according to claim 5 or 6.

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