Antenna and preparation method thereof, antenna system

By setting openings on the dielectric layer ground layer of the antenna and filling high dielectric constant materials, the antenna structure is optimized, and the problem of difficult to reduce the antenna profile height is solved, and efficient radiation and bandwidth expansion is achieved.

CN115552728BActive Publication Date: 2025-04-18BOE TECHNOLOGY GROUP CO LTD +1
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Patent Information

Application Number
CN202180000984.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-04-29
Publication Date
2025-04-18
Estimated Expiration
2041-04-29

AI Technical Summary

Technical Problem

The prior art is difficult to reduce the profile height of the antenna, which affects the miniaturization and thinning of the antenna.

Method used

By providing an opening on the ground layer of the dielectric layer and in the orthogonal projection of the dielectric layer, the structure of the antenna is optimized to reduce the profile height by providing an opening on the ground layer of the dielectric layer and the radiation edge portion of the radiation patch is located in the orthogonal projection of the dielectric layer, combined with filling high dielectric constant material.

Benefits of technology

The antenna profile height is reduced, the radiation efficiency is improved, the radiation efficiency can be improved 4 to 8 times, and the radiation bandwidth is expanded.

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Abstract

The present disclosure provides an antenna and a preparation method thereof, and an antenna system, which belong to the field of communication technology. The antenna of the present disclosure includes: a dielectric layer having a first surface and a second surface arranged opposite to each other along its thickness direction; a radiation patch arranged on the first surface of the dielectric layer; a reference electrode layer arranged on the second surface of the dielectric layer, and at least partially overlapping with the orthographic projection of the radiation patch on the second surface; wherein the reference electrode layer has an opening passing through along its thickness direction, and the orthographic projection of at least part of the radiation edge of the radiation patch on the first surface is located within the orthographic projection of the opening on the first surface.
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Description

Technical Field

[0001] The present disclosure belongs to the field of communication technology, and particularly relates to an antenna and a preparation method thereof, and an antenna system. Background Art

[0002] In mobile terminals such as mobile phones, laptops, tablets, and wireless applications such as microsatellites, smart windows, and smart wearable devices, the miniaturization and thin-filming of antennas have become a development trend. Thin-filming of antennas helps to achieve conformal structure design and reduce the weight of antennas. Among them, an important aspect of thin-filming of antennas is to reduce the profile height of the antenna. Therefore, how to reduce the profile height of the antenna is a technical problem that needs to be solved urgently. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art, and provides an antenna and a preparation method thereof, and an antenna system.

[0004] In a first aspect, an embodiment of the present disclosure provides an antenna, comprising:

[0005] The dielectric layer has a first surface and a second surface disposed opposite to each other along a thickness direction thereof;

[0006] A radiation patch, arranged on the first surface of the dielectric layer;

[0007] A reference electrode layer is disposed on the second surface of the dielectric layer and at least partially overlaps with the orthographic projection of the radiation patch on the second surface; wherein,

[0008] The reference electrode layer has an opening that penetrates along the thickness direction thereof, and the orthographic projection of at least part of the radiation edge of the radiation patch on the first surface is located within the orthographic projection of the opening on the first surface.

[0009] The reference electrode layer has a middle area and a peripheral area surrounding the middle area; the opening passes through at least a portion of a boundary line between the middle area and the peripheral area; the orthographic projection of the radiation patch on the first surface covers the orthographic projection of the middle area of ​​the reference electrode on the first surface;

[0010] The reference electrode layer includes a first hollow pattern located in a middle area and a second hollow pattern located in a peripheral area; the radiation patch includes a third hollow pattern.

[0011] The orthographic projections of the hollow portion of the first hollow pattern and the hollow portion of the third hollow portion on the first surface are completely overlapped.

[0012] Wherein, the radiation patch includes a first radiation side edge and a second radiation side edge extending along the first direction and arranged side by side along the second direction; the opening includes a first opening and a second opening extending along the first direction and arranged side by side along the second direction; the orthographic projection of the first radiation side on the dielectric layer passes through the orthographic projection of the first opening on the dielectric layer; the orthographic projection of the second radiation side on the dielectric layer passes through the orthographic projection of the second opening on the dielectric layer.

[0013] Wherein, the length of the first opening is not less than the length of the first radiation edge; and / or the length of the second opening is not less than the length of the second radiation edge.

[0014] Wherein, the first hollow pattern includes a plurality of first metal wires extending along the third direction and arranged side by side along the first direction, and the gaps between the first metal wires define the hollow portion of the first hollow pattern;

[0015] The second hollow pattern includes a plurality of second metal wires extending along the third direction and arranged side by side along the first direction, and the gaps between the second metal wires define a hollow portion of the second hollow pattern;

[0016] The three hollow patterns include a plurality of third metal wires extending along a third direction and arranged side by side along the first direction, and the gaps between the third metal wires define hollow portions of the third hollow patterns.

[0017] The spacing between any two adjacent first metal lines is the same as the spacing between any two adjacent second metal lines; and the orthographic projection of an extension line of the second metal line on the dielectric layer covers the orthographic projection of the first metal line on the dielectric layer.

[0018] The first direction is the same as the third direction.

[0019] Among them, the first hollow pattern also includes a plurality of fourth metal wires arranged to cross the plurality of first metal wires; the fourth metal wires extend along a fourth direction and are arranged side by side along the second direction; the third hollow pattern also includes a plurality of fifth metal wires arranged to cross the plurality of third metal wires; the fifth metal wires extend along the fourth direction and are arranged side by side along the second direction.

[0020] The fourth direction is the same as the first direction.

[0021] Wherein, the second hollow pattern further includes a plurality of sixth metal wires arranged to cross the plurality of first metal wires; the sixth metal wires extend along the fourth direction and are arranged side by side along the second direction.

[0022] Among them, the radiation patch also includes a third radiation side and a fourth radiation side extending along the second direction and arranged side by side along the first direction; the opening also includes a third opening and a fourth opening extending along the second direction and arranged side by side along the first direction; the orthographic projection of the third radiation side on the dielectric layer passes through the orthographic projection of the third opening on the dielectric layer; the orthographic projection of the fourth radiation side on the dielectric layer passes through the orthographic projection of the fourth opening on the dielectric layer.

[0023] Wherein, the length of the third opening is not less than the length of the third radiation edge; and / or, the length of the fourth opening is not less than the length of the fourth radiation edge.

[0024] Wherein, the outlines of the reference electrode and the radiation patch are both circular or elliptical;

[0025] The reference electrode layer includes a plurality of concentrically arranged seventh metal wires, and a plurality of eighth metal wires radiating from the center of the reference electrode to the edge, and at least part of the eighth metal wires are disconnected at the position of the seventh metal wires to define the opening;

[0026] The radiation electrode circle includes a ninth metal wire concentrically arranged therein, and a plurality of tenth metal wires radiating from the center of the reference electrode to the edge thereof.

[0027] Wherein, the opening includes a first opening and a second opening; wherein, the first opening and the second opening are in a centrally symmetrical shape.

[0028] Wherein, the reference electrode layer further includes a filling medium filled in the opening.

[0029] Wherein, the filling medium includes silicon or aluminum oxide.

[0030] The dielectric layer includes a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer and a third sub-dielectric layer which are stacked, and a surface of the third sub-dielectric layer facing away from the first bonding layer is used as the first surface of the dielectric layer, and a surface of the first sub-dielectric layer facing away from the second bonding layer is used as the second surface of the dielectric layer.

[0031] The dielectric layer includes a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer and a third sub-dielectric layer which are stacked, and a surface of the third sub-dielectric layer close to the first bonding layer is used as the first surface of the dielectric layer, and a surface of the first sub-dielectric layer close to the second bonding layer is used as the second surface of the dielectric layer.

[0032] The materials of the first sub-dielectric layer and the third sub-dielectric layer both include polyimide, and the materials of the second sub-dielectric layer both include polyethylene terephthalate.

[0033] The width of the opening is more than 5 times the thickness of the dielectric layer.

[0034] In a second aspect, an embodiment of the present disclosure provides a method for preparing an antenna, which includes:

[0035] providing a dielectric layer;

[0036] A reference electrode layer is formed on the first surface of the dielectric layer by a patterning process, wherein an opening is formed on the reference electrode layer;

[0037] A pattern including a radiation patch is formed on the second surface of the dielectric layer by a patterning process; wherein the orthographic projection of at least part of the radiation edge of the radiation patch on the first surface is located within the orthographic projection of the opening on the first surface.

[0038] The dielectric layer comprises a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer and a third sub-dielectric layer which are stacked in sequence; the preparation method comprises: providing the first sub-dielectric layer;

[0039] Forming the reference electrode layer on the first sub-dielectric layer by a patterning process;

[0040] The first bonding layer is coated on the side of the first sub-dielectric layer away from the first electrode layer, and the second sub-dielectric layer is formed on the first bonding layer, and then the second bonding layer is formed on the surface of the second sub-dielectric layer away from the first bonding layer, and the third sub-dielectric layer is formed on the second bonding layer;

[0041] A pattern including a radiation patch is formed on the third sub-medium layer by a patterning process.

[0042] The dielectric layer comprises a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer and a third sub-dielectric layer which are stacked in sequence; and the preparation method comprises:

[0043] providing the first sub-medium layer;

[0044] Forming the reference electrode layer on the first sub-dielectric layer by a patterning process;

[0045] Providing the third sub-medium layer;

[0046] Forming a pattern including a radiation patch on the third sub-dielectric layer by a patterning process;

[0047] A second sub-dielectric layer is provided, and the side of the first sub-dielectric layer on which the reference electrode layer is formed is bonded to the second sub-dielectric layer through a first bonding layer, and the side of the second sub-dielectric layer on which the radiation patch is formed is bonded to the second sub-dielectric layer.

[0048] In a third aspect, an embodiment of the present disclosure provides an antenna system, which includes at least any one of the above-mentioned antennas.

[0049] Wherein, the antenna system further includes:

[0050] A transceiver unit, used for sending or receiving signals;

[0051] A radio frequency transceiver, connected to the transceiver unit, for modulating the signal sent by the transceiver unit, or for demodulating the signal received by the antenna and transmitting it to the transceiver unit;

[0052] A signal amplifier, connected to the radio frequency transceiver, for improving the signal-to-noise ratio of the signal output by the radio frequency transceiver or the signal received by the antenna;

[0053] A power amplifier, connected to the radio frequency transceiver, for amplifying the power of the signal output by the radio frequency transceiver or the signal received by the antenna;

[0054] The filtering unit is connected to the signal amplifier and the power amplifier, and is connected to the antenna, and is used to filter the received signal and send it to the antenna, or to filter the signal received by the antenna. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] Figure 1 The figure is a top view of a thin film antenna according to an embodiment of the present disclosure.

[0056] Figure 2 for Figure 1 A cross-sectional view of AA' of the film antenna.

[0057] Figure 3 for Figure 1 Another cross-sectional view of AA' of the film antenna.

[0058] Figure 4 for Figure 1 Another cross-sectional view of AA' of the film antenna.

[0059] Figure 5 for Figure 1 Simulation schematic diagram of the film antenna shown.

[0060] Figure 6 FIG. 4 is a top view of another thin film antenna according to an embodiment of the present disclosure.

[0061] Figure 7 for Figure 6 A top view of the ground layer of the film antenna is shown.

[0062] Figure 8 for Figure 6 A top view of the radiating patch of the film antenna is shown.

[0063] Fig. 9 A top view of a ground layer of another film antenna according to an embodiment of the present disclosure.

[0064] Fig.10 A top view of a radiation patch of another thin film antenna according to an embodiment of the present disclosure.

[0065] Fig.11 A top view of a ground layer of another film antenna according to an embodiment of the present disclosure.

[0066] Fig.12 A top view of a ground layer of another film antenna according to an embodiment of the present disclosure.

[0067] Fig.13 for Fig.12 Simulation schematic diagram of the film antenna shown.

[0068] Fig.14 A top view of a ground layer of another film antenna according to an embodiment of the present disclosure.

[0069] Fig.15 A top view of a radiation patch of another thin film antenna according to an embodiment of the present disclosure.

[0070] Fig.16 A top view of a ground layer of another film antenna according to an embodiment of the present disclosure.

[0071] Fig.17 A top view of a radiation patch of another thin film antenna according to an embodiment of the present disclosure.

[0072] Fig.18 The present invention is a flowchart of a method for preparing a thin film antenna according to an embodiment of the present invention.

[0073] Fig.19 The present invention is a flowchart of another method for preparing a thin film antenna according to an embodiment of the present invention.

[0074] Fig. 20 A schematic diagram of the structure of an antenna system according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0075] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0076] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one", "one" or "the" do not indicate quantity restrictions, but indicate that there is at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Similar words such as "connect" or "connected" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0077] First, Figure 1 is a top view of a thin film antenna according to an embodiment of the present disclosure; Figure 2 for Figure 1 A cross-sectional view of AA' of a thin film antenna; Figure 1 and 2 As shown, an embodiment of the present disclosure provides a thin film antenna, which includes a dielectric layer 1, a radiation patch 2, a reference electrode layer, and a feed line 4. The dielectric layer 1 includes a first surface (upper surface) and a second surface (lower surface) arranged opposite to each other along the thickness direction thereof. The radiation patch 2 and the feed line 4 are arranged on the first surface of the dielectric layer 1, and the feed line 4 is connected to the radiation patch 2, and the reference electrode layer is arranged on the second surface of the dielectric layer 1. In the embodiment of the present disclosure, an opening is provided on the reference electrode layer, and the orthographic projections of the radiation patch 2 and the reference electrode layer on the dielectric layer 1 at least partially overlap, and the orthographic projection of at least part of the radiation edge of the radiation patch 2 on the dielectric layer 1 is located within the orthographic projection of the opening on the first surface.

[0078] It should be noted that the reference electrode layer in the embodiment of the present disclosure includes but is not limited to the ground layer 3, that is, the signal applied to the reference electrode layer is a ground signal. In the embodiment of the present disclosure, the reference electrode layer is taken as the ground layer 3 as an example for explanation. It should be understood that as long as the thin film antenna is working, the actual voltage on the reference electrode layer and the radiation layer can form a loop, that is, the selection of the ground layer 3 as the reference electrode layer does not constitute a limitation on the protection scope of the embodiment of the present disclosure. In addition, in the embodiment of the present disclosure, the radiation edge of the radiation patch 2 refers to the side of the radiation patch 2. For example, when the outline of the radiation patch 2 is a rectangle, the four sides of the rectangular radiation patch 2 are the radiation edges.

[0079] The thin film antenna provided in the embodiment of the present disclosure has an opening set on the ground layer 3, and the orthographic projection of at least part of the radiation edge of the radiation patch 2 on the dielectric layer 1 is located within the orthographic projection of the opening on the dielectric layer 1. Through the setting of such an opening, the cross-section of the thin film antenna can be reduced to improve the radiation efficiency of the thin film antenna.

[0080] In some examples, the opening is filled with a filling medium, and the filling medium is a high dielectric constant material corresponding to the microwave and millimeter wave bands, such as silicon, aluminum oxide, specific ceramic materials, etc. In the opening, if the high dielectric constant material is not filled, the radiation efficiency can be increased by 4 to 5 times compared with the traditional low-profile patch antenna, and after filling with the high dielectric constant material, the maximum radiation efficiency can be increased to about 6 to 8 times, and the radiation bandwidth (30% radiation efficiency) will also increase to more than 15%.

[0081] In some examples, the materials of the radiation patch 2, the feed line 4 and the ground layer 3 can be the same, for example, at least one of copper (Cu), aluminum (Al), molybdenum (Mo), and silver (Ag). In the embodiment of the present disclosure, the radiation patch 2, the feed line 4 and the ground layer 3 are all made of copper as an example for description.

[0082] In some examples, such as Figure 2 As shown, the dielectric layer 1 in the antenna can be a single-layer structure or a composite layer structure. When the dielectric layer 1 adopts a single-layer structure, its material includes but is not limited to a flexible material, for example: the dielectric layer 1 is made of polyimide (PI) or polyethylene terephthalate (PET).

[0083] In some examples, Figure 3 for Figure 1 Another cross-sectional view of AA' of the film antenna; Figure 3As shown, when the dielectric layer 1 is a composite film layer, it includes a first sub-dielectric layer 11, a first bonding layer 12, a second sub-dielectric layer 13, a second bonding layer 14, and a third sub-dielectric layer 15 which are stacked in sequence; wherein the grounding layer 3 is arranged on the side of the first sub-dielectric layer 11 away from the first bonding layer 12, that is, the side of the first sub-dielectric layer 11 away from the first bonding layer 12 is used as the second surface of the dielectric layer 1; the radiation patch 2 is arranged on the side of the third sub-dielectric layer 15 away from the second bonding layer 14, that is, the side of the second sub-dielectric layer 13 away from the second bonding layer 14 is used as the first surface of the dielectric layer 1. The first sub-dielectric layer 11 and the third sub-dielectric layer 15 include but are not limited to PI materials; the second sub-dielectric layer 13 include but are not limited to polyethylene terephthalate (PET) materials. The materials of the first bonding layer 12 and the second bonding layer 14 can both be transparent optical (OCA) glue. When the radiation patch 2 is disposed between the third sub-dielectric layer 15 and the second adhesive layer 14 , a protective layer, such as a self-repairing transparent waterproof coating, is further formed on the upper surface of the third sub-dielectric layer 15 to protect the third sub-dielectric layer 15 .

[0084] In some examples, Figure 4 for Figure 1 Another cross-sectional view of AA' of the film antenna; Figure 4 As shown, when the dielectric layer 1 is a composite film layer, it includes a first sub-dielectric layer 11, a first bonding layer 12, a second sub-dielectric layer 13, a second bonding layer 14, and a third sub-dielectric layer 15 which are stacked in sequence; wherein the grounding layer 3 is arranged on the side of the first sub-dielectric layer 11 close to the first bonding layer 12, that is, the side of the first sub-dielectric layer 11 close to the first bonding layer 12 is used as the second surface of the dielectric layer 1; the radiation patch 2 is arranged on the side of the second sub-dielectric layer 13 close to the second bonding layer 14, that is, the side of the second sub-dielectric layer 13 close to the second bonding layer 14 is used as the first surface of the dielectric layer 1. In this case, the first microstrip line, the transducer element, and the first electrode layer are not exposed to the outside, so water and oxygen erosion can be effectively prevented.

[0085] In some examples, when the dielectric layer 1 includes a first sub-dielectric layer 11, a first bonding layer 12, a second sub-dielectric layer 13, a second bonding layer 14, and a third sub-dielectric layer 15, which are stacked in sequence, the first sub-dielectric layer 11 and the third sub-dielectric layer 15 can be made of the same material, and the thickness of the two can be the same or substantially the same. The second sub-dielectric layer 13 is different from the material and thickness of the first sub-dielectric layer 11 (the third sub-dielectric layer 15), and the thickness of the second sub-dielectric layer 13 is greater than that of the first sub-dielectric layer 11. Among them, the thickness of the first sub-dielectric layer 11 (the third sub-dielectric layer 15) is about 10μm-80μm, and the thickness of the second sub-dielectric layer 1313 is about 0.2mm-0.7mm.

[0086] The film antenna in the embodiment of the present disclosure is described below with reference to specific examples.

[0087] The first example: Figure 1 and 2 As shown, the film antenna includes a dielectric layer 1, a radiation patch 2, a feed line 4 and a reference electrode layer. Among them, the dielectric layer 1 includes a first surface (upper surface) and a second surface (lower surface) arranged opposite to each other along the thickness direction. The radiation patch 2 and the feed line 4 are arranged on the first surface of the dielectric layer 1, and the ground layer 3 is arranged on the second surface of the dielectric layer 1. The radiation patch 2 and the ground layer 3 are both plate-shaped electrodes. The shapes of the radiation patch 2 and the ground layer 3 can be the same or different. In the embodiment of the present disclosure, the same graphics of the radiation patch 2 and the ground layer 3 are taken as an example. The shapes of the radiation patch 2 and the ground electrode layer include but are not limited to rectangle, ellipse, circle, etc. Figure 1 In the example, the shapes of the radiation patch 2 and the ground electrode layer are both rectangular. In this case, the radiation patch 2 has a first radiation edge 201 and a second radiation edge 202 extending in the first direction and arranged side by side in the second direction; and a third radiation edge 203 and a fourth radiation edge 204 extending in the second direction and arranged side by side in the first direction. The feed line 4 is connected to a vertex position of the radiation patch 2 to provide a microwave signal for the radiation patch 2. The ground layer 3 has two openings extending in the first direction and arranged side by side in the second direction, namely, a first opening 31 and a second opening 32, and the first opening 31 and the second opening 32 are filled with a filling medium. Among them, the orthographic projection of the first radiation edge 201 of the radiation patch 2 on the dielectric layer 1 passes through the orthographic projection of the first opening 31 on the dielectric layer 1; the orthographic projection of the second radiation edge 202 of the radiation patch 2 on the dielectric layer 1 passes through the orthographic projection of the second opening 32 on the dielectric layer 1. By setting the first opening 31 and the second opening 32 in the ground layer 3, the cross-sectional height of the film antenna is reduced to improve the radiation efficiency.

[0088] It should be noted that in the embodiments of the present disclosure, the first direction and the second direction, for example, the first direction and the second direction are perpendicular to each other, wherein the first direction is a vertical direction and the second direction is a horizontal direction. In the embodiments of the present disclosure, the first direction is a vertical direction and the second direction is a horizontal direction. Figure 1In the example, the first opening 31 and the second opening 32 are provided on the ground layer 3. In fact, the third opening 37 and the fourth opening 38 extending along the second direction and arranged side by side along the first direction may also be provided on the ground layer 3. The orthographic projection of the third radiation edge 203 of the radiation element on the dielectric layer 1 passes through the orthographic projection of the third opening 37 on the dielectric layer 1, and the orthographic projection of the fourth radiation edge 204 of the radiation element on the dielectric layer 1 passes through the orthographic projection of the fourth opening 38 on the dielectric layer 1. Of course, only one or any multiple of the first opening 31, the second opening 32, the third opening 37 and the fourth opening 38 may be provided on the ground layer 3 of the embodiment of the present disclosure.

[0089] In some examples, the length of the first opening 31 is not less than the length of the first radiation edge 201; and / or the length of the second opening 32 is not less than the length of the second radiation edge 202. For example, the length of the first opening 31 is not less than the length of the first radiation edge 201, and the length of the second opening 32 is not less than the length of the second radiation edge 202. When the ground layer 3 is further provided with a third opening 33 and a fourth opening 340, the length of the third opening 33 is not less than the length of the third radiation edge 203, and / or the length of the fourth opening 34 is not less than the length of the fourth radiation edge 204. Through this arrangement, the radiation efficiency of the RF signal is effectively improved.

[0090] In some examples, if the thickness of the dielectric layer 1 is h, the width of the first opening 31 (second opening 32) of the grounding layer 3 is greater than 5h, for example: the width of the first opening 31 (second opening 32) of the grounding layer 3 is 5h-10h. The first opening 31 and the second opening 32 both include a first side and a second side extending along the second direction and arranged side by side along the first direction; the distance between the orthographic projection of the first radiation edge 201 on the dielectric layer 1 and the orthographic projection of the first side of the first opening 31 on the dielectric layer 1 is a, and the distance between the orthographic projection of the second radiation edge 202 on the dielectric layer 1 and the orthographic projection of the first side of the second opening 32 on the dielectric layer 1 is b. The specific values ​​of a and b need to be obtained by simulation optimization based on the radiation frequency and the height of the dielectric layer 1. The thickness of the radiation patch 2 and the grounding layer 3 are both about 3 skin depths.

[0091] In one example, taking the 10 mm wave band (30 GHz) as an example, the thickness of the dielectric layer 1 is 20 μm, and the dielectric constant is 3; the thickness of the radiation patch 2 and the ground layer 3 are both 3 μm; the width of the first opening 31 and the second opening 32 are both 250 μm. The first radiation edge 201 and the second radiation edge 202 are 3.4 μm, the third radiation edge 203 and the fourth radiation portion are 3 μm, and the first opening 31 and the second opening 32 are respectively set corresponding to the first radiation edge 201 and the second radiation edge 202. Figure 8As shown, S1 represents the simulation curve without setting the first opening 31 and the second opening 32 in the grounding layer 3, S2 represents the simulation curve with setting the first opening 31 and the second opening 32 in the grounding layer 3, and S3 represents the simulation curve with setting the first opening 31 and the second opening 32 in the grounding layer 3 and setting the filling medium in the first opening 31 and the second opening 32; at this time, the film antenna with the first opening 31 and the second opening 32 can obtain a radiation efficiency of 42% at a frequency of 31 GHz, and the film antenna without the first opening 31 and the second opening 32 in the grounding layer 3 can obtain a radiation efficiency of 8.85% at a frequency of 31 GHz, which is nearly 5 times higher than the radiation frequency of the antenna without openings on the grounding layer 3. Filling the first opening 31 and the second opening 32 with high dielectric material further improves the radiation efficiency to 63%, which is more than 7 times the radiation efficiency of the antenna without openings. It can be seen that setting an opening on the grounding electrode can effectively improve the radiation efficiency, and of course filling the opening with high dielectric material can further improve the radiation efficiency.

[0092] Second example: Figure 6 is a top view of another film antenna according to an embodiment of the present disclosure; Figure 7 for Figure 6 A top view of the ground layer 3 of the film antenna shown; Figure 8 for Figure 6 The top view of the radiation patch 2 of the film antenna shown; the film antenna and Figure 1 The film antenna shown is substantially the same, the only difference being that the film antenna is a transparent film antenna, wherein the radiation patch 2 and the ground layer 3 both adopt a hollow pattern structure. For example: the ground layer 3 includes a middle area Q1 and a peripheral area Q2 surrounding the middle area Q1, and the opening of the ground layer 3 is formed at the junction of the middle area Q1 and the peripheral area Q2. The ground layer 3 includes a first hollow pattern located in the middle area Q1 and a second hollow pattern located in the peripheral area Q2. The radiation patch 2 includes a third hollow pattern, and the orthographic projection of the radiation patch 2 on the dielectric layer 1 covers the orthographic projection of the middle area Q1 of the ground layer 3 on the dielectric layer 1. Among them, the orthographic projections of the hollow portion of the first hollow pattern and the hollow portion of the third hollow pattern on the dielectric layer 1 overlap, and this arrangement improves the radiation efficiency of the film antenna while maximizing the light transmittance of the film antenna.

[0093] For example: Figure 7As shown, the first hollow pattern includes a plurality of first metal wires 33 extending along the second direction and arranged side by side along the first direction, and the gaps between adjacent first metal wires 33 define the hollow portion of the first hollow pattern. The second hollow pattern includes a plurality of second metal wires 34 extending along the second direction and arranged side by side along the first direction, and the gaps between adjacent second metal wires 34 define the hollow portion of the second hollow pattern. The third hollow pattern includes a plurality of third metal wires 21 extending along the second direction and arranged side by side along the first direction, and the gaps between adjacent third metal wires 21 define the hollow portion of the third hollow pattern. Since the orthographic projections of the hollow portion of the first hollow pattern and the hollow portion of the third hollow pattern overlap above the dielectric layer 1, at this time, the orthographic projections of a first metal wire 33 and a third metal wire 21 above the dielectric layer 1 overlap, for example: the first metal wire 33 and the third metal wire 21 are arranged in a one-to-one correspondence.

[0094] Continue to refer to Figure 7 Due to the arrangement of the first opening 31 and the second opening 32 in the grounding layer 3, and due to the arrangement of the first hollow pattern in the middle area Q1 of the grounding layer 3, part of the second metal wire 34 in the peripheral area Q2 includes a first line segment distributed on the side of the first opening 31 away from the middle area Q1, and a second line segment distributed on the side of the second opening 32 away from the middle area Q1. The extension line of a metal wire overlaps with the positive projection of the first line segment and the second line segment of a second metal wire 34 on the dielectric layer 1. In this case, the first hollow pattern and the hollow pattern located on the dielectric layer 1 can be formed by a single patterning process, and the transmittance of each position of the grounding layer 3 composed of the first hollow pattern and the second hollow pattern is the same, thereby ensuring the optical uniformity of the thin film antenna. In addition, since the first metal wire 33, the second metal wire 34 and the third metal wire 21 have the same extension direction in the embodiment disclosed in the present invention, the transmitted microwave or millimeter wave energy is scattered to the free space through the first opening 31 and the second opening 32 to the maximum extent.

[0095] It should be noted that Figure 6 In the figure, the first metal wire 33, the second metal wire 34, and the third metal wire 21 are all extended in the same direction as an example, but in actual design, as long as the first metal wire 33, the second metal wire 34, and the third metal wire 21 extend in directions different from the first opening 31 and the second opening 32, it will be sufficient. Therefore, the fact that the first metal wire 33, the second metal wire 34, and the third metal wire 21 extend in the second direction does not limit the protection scope of the embodiment of the present disclosure.

[0096] In one example, for a free wavelength of about 10 mm (30 GHz), the widths of the first metal wire 33, the second metal wire 34, and the third metal wire 21 are between 2 μm and 20 μm, and the widths of the hollow portions of the first hollow pattern, the second hollow pattern, and the third hollow pattern are all in the order of hundreds of microns. This is verified by simulation. Figure 6 The radiation efficiency of the film antenna shown is around 47%.

[0097] For example: Fig. 9 A top view of a ground layer 3 of another film antenna according to an embodiment of the present disclosure; Fig.10 FIG. 2 is a top view of a radiation patch 2 of another film antenna according to an embodiment of the present disclosure; Fig. 9 and 10 As shown, this film antenna is Figure 6 The film antenna structures shown are substantially the same, except that the first hollow pattern in the middle area Q1 of the ground layer 3 includes not only a plurality of first metal wires 33 extending along the second direction and arranged side by side along the first direction, but also a plurality of fourth metal wires 35 intersecting with the plurality of first metal wires 33, and the plurality of fourth metal wires 35 extend along the first direction and are arranged side by side along the second direction. Correspondingly, the third hollow pattern of the radiation patch 2 includes not only a plurality of third metal wires 21 extending along the second direction and arranged side by side along the first direction, but also a plurality of fifth metal wires 22 intersecting with the plurality of third metal wires 21, and the plurality of fifth metal wires 22 extend along the first direction and are arranged side by side along the second direction. Since the orthographic projections of the hollow portions of the first hollow pattern and the hollow portions of the third hollow pattern on the dielectric layer 1 overlap, the orthographic projections of a fourth metal wire 35 and a fifth metal wire 22 on the dielectric layer 1 overlap, for example, the fourth metal wire 35 and the fifth metal wire 22 are arranged one-to-one.

[0098] exist Fig. 9 and 10 In the thin film antenna shown in the figure, the first hollow pattern and the third hollow pattern adopt a grid structure. Figure 6 The grid density of the first hollow pattern and the third hollow pattern is increased, thereby improving the radiation gain of microwave and millimeter waves.

[0099] In some examples, Fig.11 A top view of a ground layer 3 of another film antenna according to an embodiment of the present disclosure;

[0100] like Fig.11As shown, the ground layer 3 has not only a first hollow pattern in the middle area Q1 as a grid pattern, but also a second hollow pattern in the peripheral area Q2 as a grid pattern. For example, the second hollow pattern includes not only a plurality of second metal wires 34 extending along the second direction and arranged side by side along the first direction, but also a plurality of sixth metal wires 36 intersecting with the plurality of second metal wires 34, and the plurality of sixth metal wires 36 extend along the first direction and are arranged side by side along the second direction. The size of the hollow portion in the first hollow pattern and the size in the second hollow pattern ensure uniform light transmittance of the film antenna.

[0101] Further Fig.12 FIG. 1 is a top view of a ground layer 3 of another film antenna according to an embodiment of the present disclosure; the structure of the ground layer 3 is similar to that of the above-mentioned Fig. 9 The structures are substantially the same, the only difference being that the ground layer 3 includes not only the first opening 31 and the second opening 32, but also the third opening 37 and the fourth opening 38; wherein the widths of the first opening 31 and the second opening 32 are both W1, and the widths of the third opening 37 and the fourth opening 38 are both W2; in some examples, W2=W1. In this structure, the operating frequency bands corresponding to the horizontal polarization and the vertical polarization can be designed respectively to realize a dual-polarized antenna. There are multiple ways to feed energy for dual polarization. Fig.10 Only the feed line 4 is shown to feed and receive energy from one of the top corners of the rectangular patch.

[0102] for Fig.10 The first radiation edge 201 and the second radiation edge 202 of the thin film antenna radiation patch 2 are 3.4μm, the third radiation edge 203 and the fourth radiation portion are 3μm, the line widths of the first metal wire 33, the second metal wire 34, the third metal wire 21, the fourth metal wire 35, the fifth metal wire 22 and the sixth metal wire 36 are all equal, for example, equal to 15μm, the widths of the first opening 31 and the second opening 32 are both W1, and the widths of the third opening 37 and the fourth opening 38 are both W2, which are all 250μm, and the width of each hollow portion is 185μm. Fig.13 for Fig.12 The simulation diagram of the film antenna is shown in FIG. Fig.13 As shown in FIG. 1 , after simulation, the maximum radiation efficiency of the film antenna can reach 63%, and the bandwidth of 30% radiation efficiency can reach 20.7%, and the bandwidth of 40% radiation efficiency can also reach 19%. Fig.13 As shown in S4 in Figure 1, the realized gain can reach 4.13dB.

[0103] The third example: Fig.14 A top view of a ground layer 3 of another film antenna according to an embodiment of the present disclosure;

[0104] Fig.15FIG. 2 is a top view of a radiation patch 2 of another film antenna according to an embodiment of the present disclosure; Fig.14 and 15 As shown, the film antenna is Fig.11 The film antenna is roughly the same, the only difference is that the multiple first metal wires 33 in the first hollow pattern extend along the third direction and are arranged side by side along the first direction; the fourth metal wires 35 extend along the fourth direction and are arranged side by side along the first direction; the multiple second metal wires 34 in the second hollow pattern extend along the third direction and are arranged side by side along the first direction; the sixth metal wire 36 extends along the fourth direction and is arranged side by side along the first direction; the multiple third metal wires 21 in the second hollow pattern extend along the third direction and are arranged side by side along the first direction; the fifth metal wire 22 extends along the fourth direction and is arranged side by side along the first direction. Among them, the third direction intersects with the first direction and is not perpendicular to it; the fourth direction is in the first direction and is not perpendicular to it. In this way, the hollow part in the first hollow pattern, the hollow part in the second hollow pattern, and the hollow part in the third hollow pattern are all diamond grids. For the rest of the structure, it is the same as Fig.11 The film antenna shown has the same structure, so it will not be repeated here. This film antenna can also achieve the function of reducing the profile height and increasing the radiation.

[0105] The fourth example, Fig.16 A top view of a ground layer 3 of another film antenna according to an embodiment of the present disclosure;

[0106] Fig.17 FIG. 2 is a top view of a radiation patch 2 of another film antenna according to an embodiment of the present disclosure; Fig.16 and 17 As shown, the radiation patch 2 and the grounding layer 3 in the film antenna are both elliptical. Of course, the radiation patch 2 and the grounding layer 3 can also be circular, etc. Among them, the grounding layer 3 includes a plurality of concentrically arranged seventh metal wires 39, and a plurality of eighth metal wires 23 radiating from the center of the grounding layer 3 to the edge, and at least part of the eighth metal wires 23 are disconnected at the position of the seventh metal wire 39 to define an opening. For example: Fig.16In the embodiment, part of the eighth metal wire 23 is disconnected at the position of the seventh metal wire 39, defining two openings, namely the first opening 31 and the second opening 32. The ninth metal wire 310 is concentrically arranged in the radiation electrode circle, and a plurality of tenth metal wires 24 are radiated from the center of the reference electrode to the edge. In this case, a ninth metal wire 310 overlaps with the orthographic projection of a seventh metal wire 39 on the dielectric layer 1, and an eighth metal wire 23 overlaps with the orthographic projection of a tenth metal wire 24 on the dielectric layer 1. The spacing between two adjacent seventh metal wires 39 is equal to the spacing between two adjacent ninth metal wires 310. However, the number of the ninth metal wires 310 is less than the number of the seventh metal wires 39, and the number of the eighth metal wires 23 and the tenth metal wires 24 can be equal. And the orthographic projection of the ninth metal wire 310 farthest from the center on the dielectric layer 1 passes through the orthographic projections of the first opening 31 and the second opening 32 on the dielectric layer 1. This type of thin film antenna can also achieve the function of reducing the profile height and increasing radiation.

[0107] In some examples, Fig.16 The first opening 31 and the second opening 32 in the film are in a centrally symmetrical pattern. This helps to adjust the radiation frequency of the film antenna.

[0108] The thin film antenna proposed in the embodiment of the present disclosure first makes an opening on the grounding layer 3 of the traditional microstrip patch antenna at the edge of the microstrip patch, so that the radiation efficiency of the radiation patch 2 can achieve a radiation efficiency of more than 40% at a cross-sectional height below 1% of the wavelength. Secondly, the opening position of the grounding layer 2 is filled with low-loss and high-dielectric constant materials, which not only further improves the radiation efficiency of the resonant frequency band, but also allows the radiation bandwidth to reach more than 20%. Moreover, by designing the metal grid on the grounding layer 2 and the radiation patch 2, we can achieve an ultra-low profile design while maintaining a high radiation efficiency of the antenna, while meeting the requirements of thin film and transparency of the microwave patch antenna.

[0109] Second, Fig.18 Flow chart of a method for preparing a thin film antenna according to an embodiment of the present disclosure; Fig.18 As shown, the embodiment of the present disclosure provides a method for preparing a thin film antenna, which can be used to prepare any of the above-mentioned thin film antennas. The method specifically includes:

[0110] S1. Provide a dielectric layer 1.

[0111] The dielectric layer 1 may be a flexible substrate or a glass substrate, and step S1 may include a step of cleaning the dielectric layer 1 .

[0112] S2, forming a grounding layer 3 on the second surface of the dielectric layer 1 by a patterning process, wherein an opening is formed on the grounding layer 3.

[0113] In some examples, step S2 may specifically include: depositing a first metal film on the first surface of the dielectric layer 11 by a method including but not limited to magnetron sputtering, then coating, exposing, developing, and then wet etching, and stripping after etching to form a pattern including a ground layer 3.

[0114] S3, forming a pattern including the radiation patch 2 and the feed line 4 on the second surface of the dielectric layer 1 by a patterning process. At least part of the radiation edge of the radiation patch 2 is within the orthographic projection of the dielectric layer 1 through the opening.

[0115] In some examples, step S3 may specifically include depositing a second metal film on the first surface of the dielectric layer 1 by a method including but not limited to magnetron sputtering, and then coating, exposing, developing, and subsequently wet etching, and stripping after etching to form a pattern including the radiation patch 2 and the feed line 4.

[0116] It should be noted here that the preparation order of the above steps S2 and S3 can be interchanged, that is, the radiation patch 2 and the feed line 4 can be formed on the first surface of the dielectric layer 1, and then the grounding layer 3 is formed on the first surface of the dielectric layer 1, all of which are within the protection scope of the embodiments of the present disclosure.

[0117] In some examples, such as Figure 3 As shown, the dielectric layer 1 in the embodiment of the present disclosure includes a first sub-dielectric layer 11, a first bonding layer 12, a second sub-dielectric layer 13, a second bonding layer 14 and a third sub-dielectric layer 15 which are stacked in sequence, wherein the surface of the first sub-dielectric layer 11 away from the first bonding layer 12 is used as the second surface of the dielectric layer 1, and the surface of the third sub-dielectric layer 15 away from the second bonding layer 14 is used as the first surface of the dielectric layer 1, that is, the grounding layer 3 is arranged on the side of the first sub-dielectric layer 11 away from the first bonding layer 12, and the radiation patch 2 and the feed line 4 are arranged on the side of the third sub-dielectric layer 15 away from the second bonding layer 14. Fig.19 FIG. 1 is a flow chart of another method for preparing a thin film antenna according to an embodiment of the present disclosure; Fig.19 As shown, the preparation method of the embodiment of the present disclosure can also be implemented by the following steps.

[0118] S11 . Provide a first sub-dielectric layer 11 .

[0119] The first sub-dielectric layer 11 may be a PI substrate, and step S11 may include a step of cleaning the first sub-dielectric layer 11 .

[0120] S12, forming a ground layer 3 on the first sub-dielectric layer 11 by a patterning process, wherein an opening is formed on the ground layer 3.

[0121] The step of forming the ground layer 3 is the same as the above step S2, so it will not be described again here.

[0122] S13, coating the first bonding layer 12 on the side of the first sub-dielectric layer 11 facing away from the ground layer 3, and forming the second sub-dielectric layer 13 on the first bonding layer 12, then forming the second bonding layer 14 on the surface of the second sub-dielectric layer 13 facing away from the first bonding layer 12, and forming the third sub-dielectric layer 15 on the second bonding layer 14.

[0123] The second sub-medium layer 13 may be formed of a PET substrate, and the third sub-medium layer 15 may be formed of a PI substrate. The first adhesive layer 12 and the second adhesive layer 14 may be formed of OCA adhesive.

[0124] S14 , forming a pattern including the radiation patch 2 and the feed line 4 on the third sub-dielectric layer 15 by a patterning process.

[0125] The steps of forming the radiation patch 2 and the feed line 4 are the same as those of the above step S3 , so they will not be described again here.

[0126] It should be noted that, in the above, the example in which steps S11 to S13 are performed before step S14 is taken. In an actual process, step S14 may be performed first, and then steps S11 to S13.

[0127] Reference Figure 4 The radiation patch 2 and the feed line 4 can also be arranged between the second sub-dielectric layer 13 and the second bonding layer 14, and the ground layer 3 can also be arranged between the first sub-dielectric layer 11 and the first bonding layer 12. The forming method can be similar to the above method, so it will not be repeated here.

[0128] Thirdly, Fig. 20 Schematic diagram of the structure of an antenna system according to an embodiment of the present disclosure; Fig. 20 As shown, an embodiment of the present disclosure provides an antenna system, comprising at least one of the above antennas.

[0129] In some examples, the antenna system provided by the embodiments of the present disclosure also includes a transceiver unit, a radio frequency transceiver, a signal amplifier, a power amplifier, and a filtering unit. The antenna in the antenna system can be used as a transmitting antenna or as a receiving antenna. Among them, the transceiver unit may include a baseband and a receiving end. The baseband provides a signal of at least one frequency band, for example, 2G signals, 3G signals, 4G signals, 5G signals, etc., and sends a signal of at least one frequency band to the radio frequency transceiver. After the antenna in the antenna system receives the signal, it can be processed by the filtering unit, the power amplifier, the signal amplifier, and the radio frequency transceiver and then transmitted to the receiving end in the first launch unit. The receiving end may be, for example, a smart gateway.

[0130] Furthermore, the RF transceiver is connected to the transceiver unit, and is used to modulate the signal sent by the transceiver unit, or to demodulate the signal received by the antenna and transmit it to the transceiver unit. Specifically, the RF transceiver may include a transmitting circuit, a receiving circuit, a modulating circuit, and a demodulating circuit. After the transmitting circuit receives various types of signals provided by the substrate, the modulating circuit can modulate various types of signals provided by the baseband and then send them to the antenna. The antenna receives the signal and transmits it to the receiving circuit of the RF transceiver. The receiving circuit transmits the signal to the demodulating circuit, and the demodulating circuit demodulates the signal and transmits it to the receiving end.

[0131] Furthermore, the RF transceiver is connected to a signal amplifier and a power amplifier, and the signal amplifier and the power amplifier are connected to a filter unit, and the filter unit is connected to at least one antenna. In the process of the antenna system sending signals, the signal amplifier is used to improve the signal-to-noise ratio of the signal output by the RF transceiver and then transmit it to the filter unit; the power amplifier is used to amplify the power of the signal output by the RF transceiver and then transmit it to the filter unit; the filter unit may specifically include a duplexer and a filter circuit, and the filter unit combines the signals output by the signal amplifier and the power amplifier and filters out the clutter before transmitting them to the antenna, and the antenna radiates the signal. In the process of the antenna system receiving signals, the antenna receives the signal and transmits it to the filter unit, and the filter unit filters out the clutter from the signal received by the antenna and then transmits it to the signal amplifier and the power amplifier, and the signal amplifier amplifies the signal received by the antenna to increase the signal-to-noise ratio; the power amplifier amplifies the power of the signal received by the antenna. The signal received by the antenna is processed by the power amplifier and the signal amplifier and then transmitted to the RF transceiver, and the RF transceiver then transmits it to the transceiver unit.

[0132] In some examples, the signal amplifier may include various types of signal amplifiers, such as a low noise amplifier, which is not limited herein.

[0133] In some examples, the antenna system provided by the embodiments of the present disclosure further includes a power management unit, which is connected to a power amplifier to provide the power amplifier with a voltage for amplifying a signal.

[0134] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An antenna, comprising: The dielectric layer has a first surface and a second surface disposed opposite to each other along a thickness direction thereof; A radiation patch, arranged on the first surface of the dielectric layer; A reference electrode layer is disposed on the second surface of the dielectric layer and at least partially overlaps with the orthographic projection of the radiation patch on the second surface; wherein, The reference electrode layer has an opening penetrating along the thickness direction thereof, and the orthographic projection of at least part of the radiation edge of the radiation patch on the first surface is located within the orthographic projection of the opening on the first surface; The reference electrode layer has a middle area and a peripheral area surrounding the middle area; the opening passes through at least a portion of a boundary line between the middle area and the peripheral area; the orthographic projection of the radiation patch on the first surface covers the orthographic projection of the middle area of ​​the reference electrode layer on the first surface; The reference electrode layer includes a first hollow pattern located in a middle area and a second hollow pattern located in a peripheral area; the radiation patch includes a third hollow pattern.

2. The antenna according to claim 1, wherein: The orthographic projections of the hollowed-out portion of the first hollowed-out pattern and the hollowed-out portion of the third hollowed-out pattern on the first surface completely overlap.

3. The antenna according to claim 1 or 2, wherein: The radiation patch includes a first radiation side edge and a second radiation side edge extending along the first direction and arranged side by side along the second direction; the opening includes a first opening and a second opening extending along the first direction and arranged side by side along the second direction; The orthographic projection of the first radiation side on the dielectric layer passes through the orthographic projection of the first opening on the dielectric layer; The orthographic projection of the second radiation side on the dielectric layer passes through the orthographic projection of the second opening on the dielectric layer.

4. The antenna according to claim 3, wherein: The length of the first opening is not less than the length of the first radiation side; and / or the length of the second opening is not less than the length of the second radiation side.

5. The antenna according to claim 3, wherein: The first hollow pattern includes a plurality of first metal wires extending along the third direction and arranged side by side along the first direction, and the gaps between the first metal wires define a hollow portion of the first hollow pattern; The second hollow pattern includes a plurality of second metal wires extending along the third direction and arranged side by side along the first direction, and the gaps between the second metal wires define a hollow portion of the second hollow pattern; The third hollow pattern includes a plurality of third metal wires extending along a third direction and arranged side by side along the first direction, and gaps between the third metal wires define hollow portions of the third hollow pattern.

6. The antenna according to claim 5, wherein: The spacing between any two adjacent first metal lines is the same as the spacing between any two adjacent second metal lines; and the orthographic projection of an extension line of the second metal line on the dielectric layer covers the orthographic projection of the first metal line on the dielectric layer.

7. The antenna according to claim 5, wherein: The first direction is the same as the third direction.

8. The antenna according to claim 5, wherein: The first hollow pattern also includes a plurality of fourth metal wires intersecting the plurality of first metal wires; the fourth metal wires extend along a fourth direction and are arranged side by side along the second direction; the third hollow pattern also includes a plurality of fifth metal wires intersecting the plurality of third metal wires; the fifth metal wires extend along the fourth direction and are arranged side by side along the second direction.

9. The antenna according to claim 8, wherein: The fourth direction is the same as the first direction.

10. The antenna according to claim 8, wherein: The second hollow pattern further includes a plurality of sixth metal lines arranged to cross the plurality of first metal lines; the sixth metal lines extend along the fourth direction and are arranged side by side along the second direction.

11. The antenna according to claim 10, wherein: The radiation patch further includes a third radiation side and a fourth radiation side extending along the second direction and arranged side by side along the first direction; the opening further includes a third opening and a fourth opening extending along the second direction and arranged side by side along the first direction; The orthographic projection of the third radiation side on the dielectric layer passes through the orthographic projection of the third opening on the dielectric layer; The orthographic projection of the fourth radiation side on the dielectric layer passes through the orthographic projection of the fourth opening on the dielectric layer.

12. The antenna according to claim 11, wherein: The length of the third opening is not less than the length of the third radiation side; and / or the length of the fourth opening is not less than the length of the fourth radiation side.

13. The antenna according to claim 1, wherein: The outlines of the reference electrode layer and the radiation patch are both circular or elliptical; The reference electrode layer includes a plurality of concentrically arranged seventh metal wires, and a plurality of eighth metal wires radiating from the center of the reference electrode layer to the edge, and at least part of the eighth metal wires are disconnected at the position of the seventh metal wires to define the opening; The radiation patch includes a plurality of concentrically arranged ninth metal wires and a plurality of tenth metal wires radiating from the center of the reference electrode layer to the edge.

14. The antenna according to claim 13, wherein: The opening includes a first opening and a second opening; wherein the first opening and the second opening are in a centrally symmetrical pattern.

15. The antenna according to any one of claims 1-2 or 4-14, wherein: The reference electrode layer further includes a filling medium filled in the opening.

16. The antenna according to claim 15, wherein: The filling medium includes silicon or aluminum oxide.

17. The antenna according to any one of claims 1-2 or 4-14, wherein: The dielectric layer includes a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer and a third sub-dielectric layer which are stacked. The surface of the third sub-dielectric layer facing away from the first bonding layer is used as the first surface of the dielectric layer, and the surface of the first sub-dielectric layer facing away from the second bonding layer is used as the second surface of the dielectric layer.

18. The antenna according to any one of claims 1-2 or 4-14, wherein: The dielectric layer includes a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer and a third sub-dielectric layer which are stacked. The surface of the third sub-dielectric layer close to the first bonding layer is used as the first surface of the dielectric layer, and the surface of the first sub-dielectric layer close to the second bonding layer is used as the second surface of the dielectric layer.

19. The antenna according to claim 18, wherein: The materials of the first sub-dielectric layer and the third sub-dielectric layer both include polyimide, and the material of the second sub-dielectric layer both includes polyethylene terephthalate.

20. The antenna according to any one of claims 1-2 or 4-14, wherein: The width of the opening is more than 5 times the thickness of the dielectric layer.

21. A method for preparing the antenna according to any one of claims 1 to 20, comprising: providing a dielectric layer; forming a pattern including a reference electrode layer on the first surface of the dielectric layer by a patterning process, wherein an opening is formed on the reference electrode layer; A pattern including a radiation patch is formed on the second surface of the dielectric layer by a patterning process; wherein the orthographic projection of at least part of the radiation edge of the radiation patch on the first surface is located within the orthographic projection of the opening on the first surface.

22. The preparation method according to claim 21, wherein The dielectric layer comprises a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer and a third sub-dielectric layer which are stacked in sequence; the preparation method comprises: providing the first sub-dielectric layer; forming a pattern including the reference electrode layer on the first sub-dielectric layer by a patterning process; The first bonding layer is coated on the side of the first sub-dielectric layer away from the reference electrode layer, and the second sub-dielectric layer is formed on the first bonding layer, and then the second bonding layer is formed on the surface of the second sub-dielectric layer away from the first bonding layer, and the third sub-dielectric layer is formed on the second bonding layer; A pattern including the radiation patch is formed on the third sub-dielectric layer by a patterning process.

23. The preparation method according to claim 21, wherein The dielectric layer comprises a first sub-dielectric layer, a first bonding layer, a second sub-dielectric layer, a second bonding layer and a third sub-dielectric layer which are stacked in sequence; the preparation method comprises: providing the first sub-medium layer; forming a pattern including the reference electrode layer on the first sub-dielectric layer by a patterning process; Providing the third sub-medium layer; Forming a pattern including a radiation patch on the third sub-dielectric layer by a patterning process; The second sub-dielectric layer is provided, and the side of the first sub-dielectric layer on which the reference electrode layer is formed is bonded to the second sub-dielectric layer through the first bonding layer, and the side of the third sub-dielectric layer on which the radiation patch is formed is bonded to the second sub-dielectric layer through the second bonding layer.

24. An antenna system, wherein: Comprising at least one antenna according to any one of claims 1-20.

25. The antenna system of claim 24, wherein: Also includes: A transceiver unit, used for sending or receiving signals; A radio frequency transceiver, connected to the transceiver unit, for modulating the signal sent by the transceiver unit, or for demodulating the signal received by the antenna and transmitting it to the transceiver unit; A signal amplifier, connected to the radio frequency transceiver, for improving the signal-to-noise ratio of the signal output by the radio frequency transceiver or the signal received by the antenna; A power amplifier, connected to the radio frequency transceiver, for amplifying the power of the signal output by the radio frequency transceiver or the signal received by the antenna; The filtering unit is connected to the signal amplifier and the power amplifier, and is connected to the antenna, and is used to filter the received signal and send it to the antenna, or to filter the signal received by the antenna.

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