Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

Abstract

An optoelectronic semiconductor component (1) is described, comprising a lead frame (20A) having a first mounting face (20A), a semiconductor chip (10) arranged on the first mounting face (20A) and having an emission face (10A), an optical element (30) and a molding (40). The optical element (30) has a coupling-in face (30A) oriented transversely to the first mounting face (20A). The semiconductor chip (10) is designed for emitting electromagnetic radiation through the emission face (10A), the beam axis of which extends parallel to the first mounting face (20A). The optical element (30) deflects the electromagnetic radiation of the semiconductor chip (10) coupled in via the coupling-in face (30A). The molding (40) is molded onto the lead frame (20) and has an adjustment face (40A) transversely to the first mounting face (40A). The optical element (30) and the adjustment face (40A) are in direct contact with one another. A method for producing an optoelectronic semiconductor component (1) is also described.

Description

TECHNICAL FIELD

[0001] An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are described. BACKGROUND

[0002] The optoelectronic semiconductor component is in particular set up for generating electromagnetic radiation, for example light perceptible to the human eye. SUMMARY

[0003] The task to be solved is to describe an optoelectronic semiconductor component with improved efficiency.

[0004] Another task to be solved is to describe a method for producing an optoelectronic semiconductor component, which enables simplified production.

[0005] According to at least one embodiment, the optoelectronic semiconductor component comprises a lead frame having a first mounting face. The lead frame is preferably formed using an electrically conductive material. The lead frame is formed, for example, using copper, in particular using highly etched copper, using a NiPdAu coating or a NiAg coating. The mounting face is preferably a main face of the lead frame and is provided for mounting further components on the lead frame.

[0006] According to at least one embodiment, the optoelectronic semiconductor component comprises a semiconductor chip having an emission face arranged on the first mounting face. The semiconductor chip in particular comprises an active region having a pn junction, a double heterostructure, a single quantum well structure (SQW) or a multi quantum well structure (MQW) for generating radiation.

[0007] The semiconductor chip is preferably a laser diode or a light emitting diode. The emission face of the semiconductor chip is provided for coupling out at least a portion of the electromagnetic radiation generated in operation in the semiconductor chip. For example, the semiconductor chip is a edge emitter which emits electromagnetic radiation through its side face which is inclined with respect to the main extension direction.

[0008] According to at least one embodiment, the optoelectronic semiconductor component comprises an optical element. The optical element is formed using a radiation- permeable material. Preferably, the optical element is set up for deflection or beam shaping of the electromagnetic radiation. The optical element is for example a prism or a lens. The optical element for example comprises a coupling-out face through which at least a portion of the electromagnetic radiation coupled into the optical element is coupled out. In particular, the optical element comprises a lateral mounting face which is oriented transversely, preferably perpendicularly, to the coupling-out face. For example, the optical element comprises two lateral mounting faces which are oriented parallel to one another and which limit the optical element in lateral extent on the side.

[0009] According to at least one embodiment of the optoelectronic semiconductor component, the shaped body is formed using a plastic material. For example, the shaped body is formed using an epoxy resin or a silicone compound. Epoxy resins and silicone materials can be particularly easily processed and are sufficiently resistant to external environmental influences, such as moisture or oxygen. Preferably, the material of the shaped body is configured to be radiation-impenetrable. The shaped body is, for example, a mechanical support portion of the optoelectronic semiconductor component and thus contributes to increasing the mechanical stability of the optoelectronic semiconductor component.

[0010] According to at least one embodiment of the optoelectronic semiconductor component, the optical element has a coupling-in face which is oriented transversely to the first mounting face. The coupling-in face is in particular intended for coupling-in electromagnetic radiation from the semiconductor chip into the optical element. Preferably, the coupling-in face is oriented perpendicularly to the first mounting face.

[0011] The terms "perpendicular" and "parallel" are to be understood here and in the following as being perpendicular or parallel within manufacturing tolerances. Within manufacturing tolerances, small deviations are tolerable.

[0012] According to at least one embodiment of the optoelectronic semiconductor component, the semiconductor chip is intended for emitting electromagnetic radiation through the emission face, the beam axis of which extends parallel to the first mounting face. The electromagnetic radiation propagates, for example, in the form of an emission cone. If in doubt, the beam axis of the electromagnetic radiation is the axis of the emission cone. Advantageously, this enables particularly simple mounting of a semiconductor chip embodied as an edge-emitting laser diode.

[0013] According to at least one embodiment of the optoelectronic semiconductor component, the optical element deflects the electromagnetic radiation of the semiconductor chip which is coupled in via the coupling-in face. For example, the emission of the electromagnetic radiation thus takes place transversely, in particular perpendicularly, to the first mounting face.

[0014] According to at least one embodiment of the optoelectronic semiconductor component, the shaped body is molded on the lead frame and has an adjustment face which is transverse to the first mounting face. The shaped body is preferably in direct contact with the lead frame. In at least one embodiment, the contour of the adjustment face matches the contour of the optical element. Contour here and in the following means, for example, the wave shape, the dome shape or other three-dimensional shape of a face.

[0015] According to at least one embodiment of the optoelectronic semiconductor component, the optical element and the adjustment face are in direct contact with one another. In particular, the optical element is adjusted with respect to the shaped body by means of the adjustment face. The spatial position of the optical element with respect to the first mounting face and thus also with respect to the semiconductor chip is set, for example, by means of the direct arrangement of the optical element on the adjustment face of the shaped body.

[0016] According to at least one embodiment of the optoelectronic semiconductor component, the optoelectronic semiconductor component comprises:

[0017] - a lead frame having a first mounting surface, a semiconductor chip having an emission surface arranged on the first mounting surface, an optical element, and a shaped body, wherein

[0018] - the optical element has a coupling-in surface oriented transversely to the first mounting surface,

[0019] - the semiconductor chip is designed for emitting electromagnetic radiation through the emission surface, a beam axis of the electromagnetic radiation extending parallel to the first mounting surface,

[0020] - the optical element deflects the electromagnetic radiation of the semiconductor chip coupled in via the coupling-in surface,

[0021] - the shaped body is molded on the lead frame and has an adjustment surface transversely to the first mounting surface, and

[0022] - the optical element and the adjustment surface are in direct contact with one another.

[0023] The optoelectronic semiconductor component described here is based, inter alia, on the consideration that, when manufacturing a semiconductor component having a semiconductor chip and a downstream optical element, a complex adjustment of the optical element relative to the semiconductor component is often required in order to ensure that the electromagnetic radiation is coupled in from the semiconductor chip into the optical element with as little loss as possible.

[0024] An oblique or inclined coupling-in of the electromagnetic radiation into the optical element leads to an equally oblique and / or inclined coupling-out of the electromagnetic radiation from the optical element and thus to a defective semiconductor component. The adjustment is carried out, for example, by means of a mechanical manipulation of the optical element, which is, however, time-consuming.

[0025] The optoelectronic semiconductor component described here makes use, inter alia, of the idea of molding a shaped body having an adjustment surface on the lead frame. When mounting the optical element, the optical element, more precisely the side surface of the optical element, is brought into direct contact with the adjustment surface.

[0026] The automatic adjustment of the optical element relative to the lead frame and thus also relative to the semiconductor chip mounted on the lead frame takes place by means of the adjustment surface. Advantageously, a manual adjustment of the optical element relative to the semiconductor chip can thus be dispensed with. The device consisting of the shaped body having the adjustment surface and the optical element is automatically adjusted.

[0027] According to at least one embodiment of the optoelectronic semiconductor component, the shaped body has a cavity. The cavity extends to the first mounting face. The semiconductor chip is arranged in the cavity. The cavity contributes to protecting the semiconductor chip, in particular from mechanical damage. Preferably, the cavity protrudes beyond the semiconductor chip in a direction perpendicular to the first mounting face.

[0028] According to at least one embodiment of the optoelectronic semiconductor component, a side of the cavity is configured as an adjustment face. This enables particularly simple production of the adjustment face.

[0029] According to at least one embodiment of the optoelectronic semiconductor component, the optical element is in direct contact not only with the adjustment face but also with the emission face. Direct contact between two bodies is understood, for example, as being full or at least partial contact.

[0030] It is thus possible to achieve particularly simple mounting of the optical element without spacing from the emission face of the semiconductor chip. Such mounting is advantageous, for example, in order to achieve direct coupling-in of electromagnetic radiation from the semiconductor chip into the optical element.

[0031] According to at least one embodiment, the optical element is in direct contact not only with the adjustment face but also with the first mounting face. Particularly careful mounting of the optical element is thus possible, wherein the emission face of the semiconductor chip is not touched by the optical element. Semiconductor chips having mechanically particularly sensitive emission faces can thus advantageously also be used.

[0032] According to at least one embodiment, the optical element is connected to the optoelectronic semiconductor component by means of an adhesive layer on the first mounting face or the adjustment face or at least one lateral mounting face. The adhesive layer is formed, for example, using an adhesive. By means of the adhesive layer, a mechanically particularly stable connection of the optical element in the optoelectronic semiconductor component can be achieved.

[0033] According to at least one embodiment of the optoelectronic semiconductor component, a radiation- permeable encapsulant is arranged between the emission face and the optical element. The encapsulant preferably has particularly high radiation permeability. The encapsulant can protect the emission face from damage.

[0034] Furthermore, by means of the encapsulant, for example, the refractive index of a region between the optical element and the semiconductor chip is adapted to the refractive index of the optical element and / or the semiconductor chip. In particular, the refractive index of the encapsulant lies between the refractive index of the semiconductor chip and the refractive index of the optical element. Particularly low-loss coupling-in of electromagnetic radiation into the optical element is thus advantageously achieved.

[0035] According to at least one embodiment of the optoelectronic semiconductor component, the optical element causes a deflection of the beam axis of the electromagnetic radiation by an angle of at least 85° and at most 95°. Preferably, the optical element deflects the beam axis of the in-coupled radiation by an angle of 90°. For example, the out-coupling of the electromagnetic radiation from the optical element thus takes place in a direction perpendicular to the first mounting face, in particular parallel to the normal vector of the first mounting face.

[0036] In another embodiment, the emission takes place parallel to the first mounting face and perpendicular to the direction of the radiation exiting from the semiconductor chip, in order to produce a so-called Side-Looker device. Thus, the beam axis is deflected, for example, by 90° and lies in a plane parallel to the first mounting face.

[0037] According to at least one embodiment of the optoelectronic semiconductor component, the adjustment face encloses an angle of at least 130° and at most 140° with the first mounting face. Preferably, the adjustment face encloses an angle of 135° with the first mounting face. Such an angle enables a particularly simple mounting of the 90°-deflection prism on the adjustment face.

[0038] According to at least one embodiment of the optoelectronic semiconductor component, the cavity is filled with a filler material. The filler material is in particular radiation-impermeable. The filler material protects the semiconductor chip and the optical element from the outside environment. In particular, the filler material imparts an increased mechanical stability to the optoelectronic semiconductor component. A radiation-impermeable filler material in particular facilitates a beneficial limitation of the out-coupling of electromagnetic radiation to the optical element.

[0039] According to at least one embodiment of the optoelectronic semiconductor component, the filler material terminates flush with the upper edge of the cavity. This enables a constitution of an essentially flat face of the optoelectronic semiconductor component at the height of the upper edge of the cavity. Thereby, a placement of further optical components on the optoelectronic semiconductor component is advantageously facilitated.

[0040] According to at least one embodiment of the optoelectronic semiconductor component, the lead frame has a second mounting face opposite the first mounting face, which is free of material of the shaped body. Such an exposed second mounting face enables a particularly simple surface mounting of the optoelectronic semiconductor component. Advantageously, a particularly simple electrical contacting and a particularly good heat dissipation from the optoelectronic semiconductor component can thereby be carried out.

[0041] According to at least one embodiment of the optoelectronic semiconductor component, the semiconductor chip comprises a carrier formed from a ceramic. The carrier is provided, for example, for a mechanical and electrical contacting of the semiconductor chip with the lead frame. Ceramics have a particularly high thermal conductivity and are thus used for an improved cooling of the semiconductor chip.

[0042] A method for manufacturing the optoelectronic semiconductor component described herein is further explained. All features disclosed in connection with the method are also disclosed for the optoelectronic semiconductor component and vice versa.

[0043] According to at least one embodiment of the method, a leadframe having a first mounting surface is provided. For example, the leadframe is manufactured from a metal sheet by means of a stamping method. Preferably, the first mounting surface is a main surface of the leadframe.

[0044] According to at least one embodiment of the method, a shaped body is molded on the leadframe such that an adjustment surface is constituted transversely to the first mounting surface. The shaped body is manufactured, in particular, in direct contact with the leadframe.

[0045] According to at least one embodiment of the method, a semiconductor chip is mounted on the first mounting surface.

[0046] According to at least one embodiment of the method, an optical element is arranged on the adjustment surface by bringing the adjustment surface into direct contact with a side surface of the optical element and orienting the optical element relative to the semiconductor chip by means of the adjustment surface. In particular, the optical element is oriented relative to the leadframe and thus relative to the semiconductor chip by means of the adjustment surface of the shaped body.

[0047] It is particularly preferred that such a method is used to manufacture a plurality of semiconductor components in parallel.

[0048] According to at least one embodiment of the method, a cavity is constituted in the shaped body, which cavity extends up to the first mounting surface. The semiconductor chip is mounted in the cavity. Preferably, the cavity is constituted when the shaped body is manufactured. For example, the cavity has already been provided in a mold used to manufacture the shaped body.

[0049] According to at least one embodiment of the method, the shaped body is molded by means of a transfer molding method. Transfer molding is particularly suitable for constituting a cavity while the shaped body is being constructed.

[0050] According to at least one embodiment of the method, after the shaped body is molded, a chemical and / or mechanical cleaning step is carried out to remove residues of the shaped body from the first mounting surface. Such a cleaning step makes it easier for subsequent assembly components on the first mounting surface, such as electrical contacts of the semiconductor chip.

[0051] According to at least one embodiment of the method, the semiconductor chip is mounted by means of adhesion, sintering or soldering. Adhesion, sintering and soldering are methods that result in a good electrical and thermal connection of the semiconductor chip to the leadframe.

[0052] According to at least one embodiment of the method, the cavity is filled with the filler by means of spraying or dispensing. Spraying or dispensing enables a particularly fast and precise filling of the cavity with the filler.

[0053] According to at least one embodiment of the method, each of the method steps is carried out, in particular simultaneously, for manufacturing a plurality of optoelectronic semiconductor devices in a wafer composite. Processing a plurality of optoelectronic semiconductor devices in parallel in a wafer composite enables a particularly large number of pieces to be manufactured in a method which can be carried out simply and quickly.

[0054] According to at least one embodiment of the method, the cutting of the semiconductor devices is carried out by means of a sawing process or a laser separation process after all steps for manufacturing a plurality of optoelectronic semiconductor devices in a wafer composite have been completed. A careful and particularly precise cutting of the individual optoelectronic semiconductor devices is thus advantageously achieved.

[0055] According to at least one embodiment of the method, the leadframe has a second mounting face opposite the first mounting face, and the shaped body is molded on the leadframe such that the second mounting face remains free of material of the shaped body. This enables a particularly simple surface mounting of the optoelectronic semiconductor device.

[0056] The optoelectronic semiconductor device described here is particularly suitable for use as a high-power laser diode, for example in video projection applications or 3D printers. BRIEF DESCRIPTION OF DRAWINGS

[0057] Further advantages and advantageous design and refinement options of the optoelectronic semiconductor device emerge from the embodiments described below with reference to the drawings.

[0058] Figures 1A to 1E perspective schematic view of a part of an optoelectronic semiconductor device according to a second embodiment described here,

[0059] Figure 2 perspective schematic view of a part of an optoelectronic semiconductor device according to a second embodiment described here,

[0060] Figure 3 perspective schematic view of a part of an optoelectronic semiconductor device according to a second embodiment described here,

[0061] Figure 4 schematic view of a plurality of optoelectronic semiconductor devices according to a first embodiment described here in a wafer composite.

[0062] Elements that are identical, similar or perform the same function are provided with the same reference signs in the figures. The size ratios of the figures and of the elements shown in the figures to each other should not be considered to be to scale. Rather, individual elements can be shown exaggerated in size for better presentability and / or for better understanding. DETAILED DESCRIPTION

[0063] Figure 1A A schematic diagram of the optoelectronic semiconductor component 1 according to the first embodiment described herein is shown in a first stage of the manufacturing method thereof.

[0064] The optoelectronic semiconductor component 1 here comprises a lead frame 20 having a first mounting face 20A, which is partially surrounded by a molding 40 such that the mounting face 20A and an adjoining face 20C are exposed, for example, to electrical connection lines 80 (see Figure 1C ). The lead frame 20 is provided, for example, by a stamping method. The molding 40 comprises an adjustment face 40A and completely surrounds the lead frame 20 in the lateral direction.

[0065] The molding 40 is molded onto the lead frame 20 such that the adjustment face is formed transversely to the first mounting face. A cavity 41 is introduced into the molding 40, which completely penetrates the molding 40 and extends up to the first mounting face 20A and the adjoining face 20C.

[0066] The molding 40 is, for example, molded onto the lead frame 20 by means of transfer molding. Possible residues or remnants of the molding 40 have been removed from the first mounting face 20A and the adjoining face 20C by means of a chemical and / or mechanical cleaning step.

[0067] Figure 1B The first embodiment is shown in a second stage of the manufacturing method of the optoelectronic semiconductor component. In this case, a semiconductor chip 10 with a carrier 70 is mounted in the cavity 41 on the first mounting face 20A of the lead frame 20. The carrier 70 is fixed on the mounting face 20A of the lead frame 20 by means of soldering, sintering or adhesion. Furthermore, a protection diode 11 is arranged next to the semiconductor chip 10 on the carrier 70. The protection diode 11 serves, for example, to protect the semiconductor chip 10 from damage caused by electrostatic discharge.

[0068] Figure 1C The first embodiment is shown in a third stage of the manufacturing method of the optoelectronic semiconductor component. In this case, a plurality of bonding wires 80 are provided, via which the semiconductor chip 10, the carrier 70 and the protection diode 11 are electrically connected with the lead frame 20. The bonding wires 80 are formed, for example, with gold.

[0069] Figure 1DThe first embodiment is shown in a fourth stage of the method for producing the optoelectronic semiconductor component. In this case, the optical element 30 is mounted in the cavity 41 of the shaped body 40. The optical element 30 is a deflection prism which is introduced into the cavity 41 along the adjustment face 40A of the shaped body 40. The side face of the cavity 41 is configured as the adjustment face 40A. The adjustment face 40A can thus be produced particularly stably and advantageously simply.

[0070] The optical element 30 comprises a side face 30C which lies directly on the adjustment face 40A of the shaped body 40. The optical element 30 is thus oriented with the aid of the adjustment face 40A relative to the shaped body 40 and thus also relative to the semiconductor chip 10. The optical element 30 comprises a coupling-in face 30A which is oriented such that electromagnetic radiation which emerges from the semiconductor chip 10 via the emission face 10A is coupled in via the coupling-in face into the optical element. Furthermore, the optical element 30 comprises a coupling-out face 30B via which a majority of the electromagnetic radiation emerges from the optical element 30.

[0071] In the first embodiment, the optical element 30 is in direct contact with the adjustment face 40A and the first mounting face 20A of the lead frame 20. The optical element 30 is thus not in abutment on the emission face 10A of the semiconductor chip 10. This is particularly advantageous when the semiconductor chip 10 has an emission face 10A which is sensitive to mechanical contact. Figure 1D

[0072] In the first embodiment, the optical element 30 is in direct contact with the adjustment face 40A and the first mounting face 20A of the lead frame 20. The optical element 30 is thus not in abutment on the emission face 10A of the semiconductor chip 10. This is particularly advantageous when the semiconductor chip 10 has an emission face 10A which is sensitive to mechanical contact.

[0073] Figure 1E The first embodiment is shown in a fifth stage of the method for producing the optoelectronic semiconductor component. In this case, the filler material 60 is filled into the cavity 41 of the shaped body 40. Preferably, the filling with the filler material 60 is carried out by means of spraying or dispensing. The filler material 60 ends flush with the front face of the shaped body 40 and the coupling-out face 30B of the optical element 30. A flat surface of the optoelectronic semiconductor component 1 is thus advantageously formed which simplifies the repositioning of further optical elements. The coupling-out face 30B of the optical element 30 is free of the material of the filler material 60.

[0074] ​The filler 60 is not permeable to radiation and is formed, for example, using an epoxy resin material equipped with a reflective or absorptive filler. Thereby, the exit of electromagnetic radiation is advantageously limited to the coupling-out face 30B of the optical element 30. An undesired lateral exit of scattered radiation is thus avoided. Furthermore, the filler 60 leads to an additional mechanical stability of the optical element 30 and furthermore protects the semiconductor chip 10 from the external environment.

[0075] Figure 2 The second embodiment shown in Fig. 2 basically corresponds to the first embodiment. The second embodiment differs from the first embodiment, inter alia, in that the encapsulant 50 is located between the emission face 10A of the semiconductor chip 10 and the optical element 30. The encapsulant 50 is formed using a highly transparent, radiation-permeable material. Preferably, the encapsulant is formed using silicone.

[0076] The encapsulant 50 protects not only the emission face 10A of the semiconductor chip 10 but also the coupling-in face 30A of the optical element 30 from the external environment. For example, the encapsulant 50 is embodied such that the refractive index of the encapsulant is embodied to be between the refractive index of the optical element 30 and the refractive index of the semiconductor chip 10. The optical element is formed, for example, using glass and has a refractive index of 1.4. The semiconductor chip is formed, for example, using silicon or GaAs and has a refractive index of between 3.6 and 3.9.

[0077] A gradual transition from the refractive index of the semiconductor chip 10 to the refractive index of the optical element 30 is thus achieved. The refractive index jump between the semiconductor chip 10 and the optical element 30 is advantageously reduced and a better optical coupling-in into the optical element can be achieved.

[0078] Furthermore, the optical element 30 comprises lateral mounting faces 30D. The lateral mounting faces 30D are parallel to one another and are each oriented perpendicular to the coupling-in face 30A and the coupling-out face 30B. For example, an adhesive is arranged between the filler 60 and the lateral mounting faces 30D in order to improve the mechanical stability.

[0079] Figure 3 The third embodiment shown in Fig. 3 basically corresponds to the first embodiment. The third embodiment differs from the first embodiment, inter alia, in that the coupling-in face 30A of the optical element 30 is at least partially in direct contact with the emission face 10A and forms a direct transition to the semiconductor chip 10.

[0080] Here, the optical element 30 is thus in direct contact via its side face 30C with the conditioning face 40A of the shaped body 40 and the emission face 10A of the semiconductor chip 10. The optical element 30 is embodied in particular such that the optical element does not touch the first mounting face 20A of the lead frame 20. Thus, the optical element 30 is automatically adjusted to a zero distance between its coupling-in face 30A and the emission face 10A of the semiconductor chip 10. Advantageously, an interfering air gap between the emission face 10A of the semiconductor chip 10 and the coupling-in face 30A of the optical element 30 is thus reduced or avoided.

[0081] Figure 4 A schematic diagram of a plurality of optoelectronic semiconductor devices 1 according to the first embodiment described here in a wafer composite is shown. The plurality of semiconductor devices 1 is arranged in a uniform grid. Along the sawing lines shown in dashed lines, a cutting of the optoelectronic semiconductor elements 1 is subsequently carried out by means of a sawing process or a laser separation process. Preferably, a plurality of optoelectronic semiconductor devices 1 is thus particularly simply manufactured at the same time. Figure 4 A schematic diagram of a plurality of optoelectronic semiconductor devices 1 according to the first embodiment described here in a wafer composite is shown. The plurality of semiconductor devices 1 is arranged in a uniform grid. Along the sawing lines shown in dashed lines, a cutting of the optoelectronic semiconductor elements 1 is subsequently carried out by means of a sawing process or a laser separation process. Preferably, a plurality of optoelectronic semiconductor devices 1 is thus particularly simply manufactured at the same time.

[0082] The application is not restricted by the description of the embodiments. Rather, the application encompasses any novel feature and any combination of features, in particular any combination of features in the patent claims, even if the combination is not expressly stated in the patent claims or embodiments. This patent application claims priority from German patent application 102020114371.0, the disclosure of which is hereby incorporated by reference.

[0083] List of reference signs

[0084] 1 optoelectronic semiconductor device

[0085] 10 semiconductor chip

[0086] 10A emission face

[0087] 11 protection diode

[0088] 20 lead frame

[0089] 20A first mounting face

[0090] 20B second mounting face

[0091] 20C joint face

[0092] 30 optical element

[0093] 30A coupling-in face

[0094] 30B coupling-out face

[0095] 30C side face

[0096] 30D lateral mounting surface

[0097] 40 shaped body

[0098] 40A adjustment surface

[0099] 41 cavity

[0100] 50 encapsulant

[0101] 60 filler

[0102] 70 carrier

[0103] 80 joint line

Claims

1. A photoelectronic semiconductor device (1), comprising: - A lead frame (20) having a first mounting surface (20A), a semiconductor chip (10) having an emitting surface (10A) disposed on the first mounting surface (20A), an optical element (30), and a molded body (40), wherein - The optical element (30) has a coupling input surface (30A) oriented laterally to the first mounting surface (20A). - The semiconductor chip (10) is configured to emit electromagnetic radiation through the emitting surface (10A), the beam axis of which extends parallel to the first mounting surface (20A). - The optical element (30) deflects the electromagnetic radiation coupled into the semiconductor chip (10) via the coupling input surface (30A). - The molded body (40) is molded onto the lead frame (20) and has an adjustment surface (40A) transverse to the first mounting surface (20A). - The optical element (30) and the adjustment surface (40A) are in direct contact with each other, wherein - The optical element (30) is in direct contact with the emitting surface (10A), or - The optical element (30) is in direct contact with the first mounting surface (20A), and a radiation-permeable encapsulating material (50) is arranged between the emitting surface (10A) and the optical element (30).

2. The optoelectronic semiconductor device (1) according to claim 1. The molded body (40) has a cavity (41) that extends to the first mounting surface (20A) and the semiconductor chip (10) is disposed in the cavity.

3. The optoelectronic semiconductor device (1) according to claim 2. The side of the cavity (41) is configured as an adjustment surface (40A).

4. The optoelectronic semiconductor device (1) according to any one of claims 1 to 3. The optical element (30) is connected to the optoelectronic semiconductor device (1) by means of an adhesive layer on the first mounting surface (20A), the adjustment surface (40A), or at least one lateral mounting surface (30D).

5. The optoelectronic semiconductor device (1) according to any one of claims 1 to 3. The optical element (30) causes the beam axis to deflect by an angle of at least 85° and at most 95°.

6. The optoelectronic semiconductor device (1) according to any one of claims 1 to 3. The adjustment surface (40A) forms an angle of at least 130° and at most 140° with the first mounting surface (20A).

7. The optoelectronic semiconductor device (1) according to any one of claims 2 and 3. The cavity (41) is filled with filler (60).

8. The optoelectronic semiconductor device (1) according to claim 7. The filler (60) terminates flush with the upper edge of the cavity (41).

9. The optoelectronic semiconductor device (1) according to any one of claims 1 to 3. The lead frame (20) has a second mounting surface (20B) opposite to the first mounting surface (20A), and the second mounting surface does not have the material of the molded body (40).

10. A method for manufacturing an optoelectronic semiconductor device (1), comprising the following steps: - Provide a lead frame (20) with a first mounting surface (20A). - The molding body (40) is molded onto the lead frame (20) such that it forms an adjustment surface (40A) transverse to the first mounting surface (20A). - A semiconductor chip (10) is mounted on the first mounting surface (20A), and - An optical element (30) is arranged on the adjustment surface (40A), wherein the adjustment surface (40A) is in direct contact with the optical element (30) and the optical element (30) is oriented relative to the semiconductor chip (10) by means of the adjustment surface (40A), wherein - Make the optical element (30) directly contact the emitting surface (10A), or - The optical element (30) is brought into direct contact with the first mounting surface (20A), and a radiation-permeable encapsulating material (50) is arranged between the emitting surface (10A) and the optical element (30).

11. The method for manufacturing an optoelectronic semiconductor device (1) according to claim 10, A cavity (41) is formed in the molded body (40), the cavity extends to the first mounting surface (20A), and the semiconductor chip (10) is mounted in the cavity (41).

12. The method for manufacturing an optoelectronic semiconductor device (1) according to claim 10 or 11, The molding of the molded body (40) is carried out by means of transfer molding.

13. The method for manufacturing an optoelectronic semiconductor device (1) according to claim 10 or 11, After molding the molded body (40), a chemical and / or mechanical cleaning step is performed to remove the residue of the molded body (40) from the first mounting surface (20A).

14. The method for manufacturing an optoelectronic semiconductor device (1) according to claim 10 or 11, The semiconductor chip (10) is mounted by means of bonding, sintering or welding.

15. The method for manufacturing an optoelectronic semiconductor device (1) according to claim 11, The cavity (41) is filled with filler (60) by means of spraying or dispensing.

16. The method for manufacturing an optoelectronic semiconductor device (1) according to claim 10 or 11, All method steps for fabricating multiple optoelectronic semiconductor devices (1) in a wafer composite are performed.

17. The method for manufacturing an optoelectronic semiconductor device (1) according to claim 16, After all the method steps for manufacturing multiple optoelectronic semiconductor devices (1) in a wafer composite are completed, the semiconductor devices (1) are cut by means of a sawing process or a laser separation process.

18. According to claim 10 or 11 The method for manufacturing optoelectronic semiconductor devices (1) is described above. The lead frame (20) has a second mounting surface (20B) opposite to the first mounting surface (20A), and the molded body (40) is molded onto the lead frame (20) such that the second mounting surface (20B) retains no material of the molded body (40).

Images