Quantum dot printed oled device and method of making the same

Abstract

The application relates to the technical field of OLED display, in particular to a quantum dot printing OLED device, which specifically comprises an anode substrate layer, a hole transport layer, a functional film layer, a hole blocking layer and a metal cathode layer; during production, the OLED is prepared by combining photolithography, inkjet printing and vacuum evaporation; in addition, inorganic salt halides are introduced into the quantum dots, so that the chemical groups of the quantum dots react with the inorganic salt halides to be passivated, and the functional film layer with the protection function is formed; the method can reduce the influence of surface tension on the film formation of the quantum dots, improve the uniformity of the film formation in the pixel of the printing OLED device, and further improve the performance of the printing OLED device.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of OLED display, in particular to a quantum dot printed OLED device and a manufacturing method thereof. BACKGROUND

[0002] OLED (Organic Light-Emitting Diode), also known as organic electroluminescent display or organic light-emitting semiconductor. OLED is a current type of organic light-emitting device, which is a phenomenon of light emission by injection and recombination of carriers. The light emission intensity is proportional to the injected current. Under the action of an electric field, holes generated by the anode and electrons generated by the cathode will move and be injected into the hole transport layer and the electron transport layer, respectively, and migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting light-emitting molecules to ultimately produce visible light.

[0003] OLEDs have attracted much attention in the field of flat panel display due to their excellent characteristics such as self-illumination, no need for backlight, high contrast, thin thickness, wide viewing angle, fast response, use in flexible panels, wide temperature range, simple structure and process, etc. As a key technology for flat panel display, it has made great progress in recent years. At present, in the field of small-size display, such as mobile phones, mass production has been realized and it has entered the marketization stage. However, in the field of large-size display such as computers and televisions, there are still many research and development difficulties due to the immaturity of materials and processes.

[0004] Quantum dot inkjet printing process technology is a key technology in the film forming process of printed OLED technology. Quantum dot printed OLED devices have attracted great attention due to their excellent color purity (FWHM of 30 nm), high brightness (up to 200,000 cd / m 2 ), low operating voltage (turn-on voltage < 2V), and easy processing. The thermal stability and air stability of inorganic luminescent quantum dots (QDs) can enhance the lifetime and durability of the display. In traditional OLED printing technology, when inkjet printing is performed, the inorganic luminescent quantum dot (QD) ink droplets spread on the substrate, and the droplet surface is subjected to surface tension and other forces, causing the solute to "pin" at the contact line. At this time, the droplet will continue to maintain this spreading shape. Since the solvent volatilization speed is fast at the contact line, the solution will transfer from the middle to the edge of the droplet to compensate for the volatilized solvent, and finally the solute will be deposited on the substrate to form an uneven film with thick edges and thin middle. After drying, an uneven film structure with thick edges and thin middle is formed, resulting in uneven light emission and reduced device performance. Therefore, how to improve the uniformity of the film formation within the pixel in the inkjet printing process has become a difficult point. SUMMARY

[0005] In view of the deficiencies of the prior art, one of the purposes of the present application is to provide a quantum dot printed OLED device and a manufacturing method thereof.

[0006] A manufacturing method of a quantum dot printed OLED device comprises the following steps:

[0007] S1: Selecting tin oxide as an anode substrate material and pre-treating the anode substrate;

[0008] S2: Vacuum evaporating a hole transport layer on the anode substrate;

[0009] S3: Forming a sub-pixel pit at a pixel point position by photoetching, injecting QDs ink into the sub-pixel pit by an inkjet printing process, and then reacting an inorganic salt halide alcohol solution with the QDs ink to form a functional film layer;

[0010] S4: Vacuum evaporating a hole blocking layer on the surface of the functional film layer;

[0011] S5: Vacuum evaporating a metal cathode layer of Al;

[0012] S6: UV curing and packaging.

[0013] Further, in the step S3, the QDs ink is composed of quantum dots and a non-polar solvent, and the quantum dots include one of CdSe, CuInS2 and CdS / M mixed quantum dots.

[0014] Further, in the step S3, the mass percentage of the quantum dots in the QDs ink is 1.8-2.5%.

[0015] Further, in the step S3, the inorganic salt halide includes one of ZnCl2 and ZnBr2.

[0016] Further, in the step S3, the mass percentage of the inorganic salt halide in the inorganic salt halide alcohol solution is 8-12%.

[0017] Further, in the step S3, after the QDs ink in the sub-pixel pit is dried, the inorganic salt halide alcohol solution is added dropwise to the sub-pixel pit until it covers the entire QDs ink layer, reacts for 3-5 minutes, is dried, the inorganic salt halide alcohol solution is again added dropwise to cover the entire QDs ink layer, reacts for 28-35 minutes, and the excess inorganic salt halide is cleaned.

[0018] Further, in the step S2, the material used for the hole transport layer is 1,2,4,5-tetrakis(trifluoromethyl)benzene, and the thickness of the hole transport layer is 35-45 nm.

[0019] In the S4 step, the material used in the hole blocking layer is 1,3,5-tri(1-phenyl-1H-benzimidazole-2-yl) benzene, and the thickness of the hole blocking layer is 35-45 nm.

[0020] Further, in the step S3, the photoresist used in the photolithography process is a fluorine-containing resin photoresist synthesized with 2-allyl hexafluoroisopropanol as a comonomer, or a fluorine-containing polyimide photoresist synthesized with hexafluorodianhydride as a comonomer.

[0021] Further, in the S3 step, the size of the sub-pixel pits ranges from 180-220 μm.

[0022] The second object of the present application is to provide a quantum dot printed OLED device, which is manufactured by the manufacturing method of the quantum dot printed OLED device described above, and specifically includes an anode substrate layer, a hole transport layer, a functional film layer, a hole blocking layer, and a metal cathode layer; wherein the thickness of each layer ranges as follows: the thickness of the anode substrate layer is 50-55 nm, the thickness of the hole transport layer is 35-45 nm, the thickness of the functional film layer is 40-60 nm, the thickness of the hole blocking layer is 35-45 nm, and the thickness of the metal cathode layer is 50-55 nm.

[0023] The present application has the following beneficial effects: in the process of forming a protective film by the QDs ink, ZnCl2 is added to the quantum dot material in the sub-pixel pits to react with the quantum dots, passivate the long chains on the surface of the quantum dots, and form a functional film layer with a protective effect, thereby changing the evaporation rate of the local ink, further reducing the influence of the surface tension on the QDs film formation, improving the uniformity of the film formation in the pixel of the printed OLED device, and further improving the yield of the printed OLED device manufacturing process; the prepared OLED device emits light uniformly and has greatly improved performance. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 Figure 1 is a manufacturing step diagram of a quantum dot printed OLED device of the present application;

[0025] Figure 2 Figure 2 is a cross-sectional schematic diagram of a quantum dot printed OLED device of the present application;

[0026] 1, anode substrate layer; 2, hole transport layer; 3, functional film layer; 4, hole blocking layer; 5, metal cathode layer. DETAILED DESCRIPTION

[0027] In order to facilitate the understanding of those skilled in the art, the present application will be further described below in conjunction with examples, and the content mentioned in the embodiments is not a limitation of the present application.

[0028] The raw materials and equipment used in the present application can be purchased in the market.

[0029] A manufacturing method of a quantum dot printed OLED device, as shown in the accompanying drawings, specifically comprising the following steps: Figure 1

[0030] S1: Selecting oxidized tin as the anode substrate material, and pretreating the anode substrate;

[0031] S2: Vacuum evaporation of a hole transport layer on the anode substrate;

[0032] S3: Forming a sub-pixel pit at the position of the pixel point to be formed by photoetching, and injecting QDs ink into the sub-pixel pit by an inkjet printing process, and then reacting the inorganic salt halide alcohol solution with the QDs ink to form a functional film layer with a protective effect;

[0033] S4: Vacuum evaporation of a hole blocking layer on the surface of the functional film layer;

[0034] S5: Vacuum evaporation of a metal cathode layer of Al;

[0035] S6: UV curing and packaging.

[0036] In the present application, the size of the anode substrate is slightly larger than the size of the bottom of the hole transport layer;

[0037] In step S1, the pretreatment step of the anode substrate includes cleaning with tetrahydrofuran, isopropanol and deionized water in sequence, and then transferring to an oven for baking; tetrahydrofuran can be used to clean organic synthetic substances attached to the anode substrate, such as polyvinyl chloride, butylbenzene amine, etc.; isopropanol, which is volatile, is used to remove tetrahydrofuran; deionized water is used to clean the residual isopropanol on the anode substrate.

[0038] In step S2, the material used for the hole transport layer is 1,2,4,5-tetrakis(trifluoromethyl) benzene (TFB) material, and the film thickness ranges from 35 to 45 nm;

[0039] In order to ensure the evaporation efficiency, when using the evaporation machine, the aluminum feeding, evaporation device, cooling system, unwinding, winding device and guide roller in the vacuum chamber need to be cleaned; the vacuum system is checked, the environmental humidity is reduced, and the film is pre-dried; if holes appear in the film during vacuum evaporation, the aluminum feeding speed needs to be reduced and the evaporation boat current needs to be increased.

[0040] In step S3, photoetching is performed by using a photoetching process, and the photoetching equipment is GL-F100 crown light photoetching machine. When operating the photoetching machine, the gas pressure needs to be adjusted first to prevent excessive gas pressure from damaging the equipment, and the two sides need to be calibrated before loading the film. When the exposure operation is performed, the mercury lamp power is turned on, and if the triggering is not successful, the operation can be performed again after 10 minutes. The parameters are as follows: gas pressure parameters setting: compressed air pressure-26 PSI, nitrogen pressure 6 PSI, vacuum pressure-26 PSI;​

[0041] The photoresist used in the photolithography process is a fluorinated resin photoresist synthesized with 2-allyl hexafluoroisopropanol as a comonomer, or a fluorinated polyimide photoresist synthesized with hexafluorodianhydride as a comonomer.

[0042] The sub-pixel pits formed by photolithography are rounded rectangles with a size range of 180μm×180μm-220μm-220μm.

[0043] In step S3, the QDs ink is composed of quantum dots and a non-polar solvent. The quantum dots include one of CdSe, CuInS2, and CdS / M mixed quantum dots. The non-polar solvent may include n-hexane, chloroform, toluene, etc. The quantum dots account for 1.8-2.5% of the mass of the QDs ink.

[0044] In step S3, the inorganic salt halide includes one of ZnCl2 and ZnBr2; the alcoholic solution of the inorganic salt halide specifically refers to the ethanolic solution of the inorganic salt halide, and the inorganic salt halide accounts for 8-12% of the mass of the ethanolic solution of the inorganic salt halide.

[0045] In step S3, after injecting QDs ink into the sub-pixel pits using inkjet printing, and after the QDs ink injected into the sub-pixel pits dries, an alcohol solution of inorganic salt halides is dropped into the sub-pixel pits until it covers the entire QDs ink layer. After reacting for 3-5 minutes, it is dried. The alcohol solution of inorganic salt halides is then applied again to cover the entire QDs ink layer. After reacting for 28-35 minutes, excess inorganic salt halides are washed away.

[0046] In step S4, the hole blocking layer is made of 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, and the thickness of the hole blocking layer is 35-45 nm.

[0047] The vacuum evaporation temperature for the hole blocking layer is relatively low. OLED devices require the deposition of multiple organic thin films in a high-vacuum chamber, and the quality of these films directly affects the device's quality and lifespan. Therefore, multiple crucibles containing organic materials are placed in the high-vacuum chamber. The crucibles are heated to deposit the organic materials, and a quartz crystal oscillator is used to control the film thickness. The substrate, after the functional layer printing has been completed, is placed on a heated rotating sample holder, with a metal mask (also known in the industry as a photomask) placed underneath to control the evaporation.

[0048] In step S4, the vacuum evaporation of the organic material is typically controlled between 180°C and 360°C, with an evaporation rate between 1 oscillator point / second and 5 oscillator points / second (approximately...). The vacuum level of the evaporation chamber is preferably 10. -3 Vapor deposition at around Pa yields the best results.

[0049] In step S5, the roll film is placed in the vacuum chamber during evaporation, and the vacuum chamber is closed and vacuumized. When the vacuum degree reaches a certain value (4*10 －3 mbar or above), the evaporation boat is heated to 1300-1400℃, and then a 99.9% pure aluminum wire is continuously fed to the evaporation boat. After the cooling source is turned on, the aluminum wire is continuously melted and evaporated on the evaporation boat, so that a bright aluminum layer is formed on the surface of the moving film after cooling.

[0050] The vacuum evaporation parameters of the cathode metal are set as follows: vacuum degree 10 -3 Pa, winding speed 300 m / min, aluminum feeding speed 0.5 m / min (selecting an aluminum wire with a diameter of 2 mm), and product aluminum layer thickness 200 mm.

[0051] In step S6, the UV curing resin is selected as a water-based UV curing resin-polyurethane acrylate, and the UV lamp wave band is selected as UV-A with a wavelength of 320 nm.

[0052] The cross-sectional schematic diagram of the quantum dot printed OLED device prepared by the method is shown in FIG. 1. Figure 2 As shown in FIG. 1, from bottom to top, the device includes an anode substrate layer 1, a hole transport layer 2, a functional film layer 3, a hole blocking layer 4, and a metal cathode layer 5. The thickness of each layer is as follows: the thickness of the anode substrate layer 1 is 50-55 nm, the thickness of the hole transport layer 2 is 35-45 nm, the thickness of the functional film layer 3 is 40-60 nm, the thickness of the hole blocking layer 4 is 35-45 nm, and the thickness of the metal cathode layer 5 is 50-55 nm.

[0053] Example 1

[0054] A method for manufacturing a quantum dot printed OLED device includes the following steps:

[0055] S1: Selecting tin oxide as an anode substrate material, the size of the anode substrate is 310 mm*233 mm, and the anode substrate is pretreated. The pretreatment steps include that tetrahydrofuran is used to clean organic synthetic substances attached to the anode substrate, such as polyvinyl chloride, butylbenzene amine, etc.; isopropyl alcohol is used to clean the tetrahydrofuran; deionized water is used to clean the isopropyl alcohol remaining on the anode substrate, and then the anode substrate is transferred to an oven for drying;

[0056] S2: Vacuum evaporation of a hole transport layer on the anode substrate, the material used for the hole transport layer is 1,2,4,5-tetrakis(trifluoromethyl)benzene (TFB) material, and the size of the hole transport layer is 305 mm*228 mm.

[0057] S3: Forming a sub-pixel pit at a pixel point position to be formed by a photoetch process, and injecting QDs ink into the sub-pixel pit by an inkjet printing process, and then using an inorganic salt halide alcohol solution to react with the QDs ink to form a functional film layer having a protective effect;

[0058] The photoresist used in the photoetch process is a fluorine-containing resin photoresist synthesized by taking 2-allyl hexafluoroisopropanol as a comonomer. The sub-pixel pit formed by photoetching is a rounded rectangle with a size range of 200 μm x 200 μm.

[0059] The QDs ink is composed of quantum dots and a non-polar solvent, the quantum dots are selected from CdSe, and the non-polar solvent can be n-hexane, chloroform, toluene, etc.; the mass percentage of quantum dots in the QDs ink is 10%.

[0060] The inorganic salt halide is ZnCl2; the mass percentage of ZnCl2 in the ZnCl2 ethanol solution is 10%.

[0061] After the QDs ink is injected into the sub-pixel pit by the inkjet printing process, the ZnCl2 ethanol solution is added dropwise to the sub-pixel pit until it covers the entire QDs ink layer, reacts for 5 min, is dried, the ZnCl2 ethanol solution is again added dropwise to cover the entire QDs ink layer, reacts for 30 min, and the excess ZnCl2 is cleaned.

[0062] S4: Vacuum evaporation of a hole blocking layer on the surface of the functional film layer;

[0063] The material used for the hole blocking layer is 1, 3, 5-tri (1-phenyl-1H-benzimidazole-2-yl) benzene.

[0064] S5: Vacuum evaporation of a metal cathode layer of cathode metal Al;

[0065] S6: UV curing encapsulation.

[0066] In this embodiment, the thicknesses of the layers of the prepared OLED device are as follows: the thickness of the anode substrate layer is about 50 nm, the thickness of the hole transport layer is about 40 nm, the thickness of the functional film layer is about 50 nm, the thickness of the hole blocking layer is about 40 nm, and the thickness of the metal cathode layer is about 50 nm.

[0067] Example 2

[0068] The difference between this embodiment and Example 1 is that in step S3 of this embodiment, the quantum dots are selected from CuInS2.

[0069] In the embodiment, the thickness of each layer of the prepared OLED device is as follows: the thickness of the anode substrate layer is about 55 nm, the thickness of the hole transport layer is about 35 nm, the thickness of the functional film layer is about 40 nm, the thickness of the hole blocking layer is about 35 nm, and the thickness of the metal cathode layer is about 55 nm.

[0070] Embodiment 3

[0071] The difference between the embodiment and Embodiment 1 is that in step S3 of the embodiment, CdS / M mixed quantum dots are selected.

[0072] In the embodiment, the thickness of each layer of the prepared OLED device is as follows: the thickness of the anode substrate layer is about 55 nm, the thickness of the hole transport layer is about 45 nm, the thickness of the functional film layer is about 60 nm, the thickness of the hole blocking layer is about 45 nm, and the thickness of the metal cathode layer is about 55 nm.

[0073] Embodiment 4

[0074] The difference between the embodiment and Embodiment 1 is that in step S3 of the embodiment, the mass percentage of ZnCl2 in the ethanol solution of ZnCl2 is 8%.

[0075] In the embodiment, the thickness of each layer of the prepared OLED device is similar to that of Embodiment 1.

[0076] Embodiment 5

[0077] The difference between the embodiment and Embodiment 1 is that in step S3 of the embodiment, the mass percentage of ZnCl2 in the ethanol solution of ZnCl2 is 12%.

[0078] In the embodiment, the thickness of each layer of the prepared OLED device is similar to that of Embodiment 1.

[0079] Embodiment 6

[0080] The difference between the embodiment and Embodiment 1 is that in step S3 of the embodiment, the mass percentage of quantum dots in the QDs ink is 1.8%.

[0081] In the embodiment, the thickness of each layer of the prepared OLED device is similar to that of Embodiment 1.

[0082] Embodiment 7

[0083] The difference between the embodiment and Embodiment 1 is that in step S3 of the embodiment, the mass percentage of quantum dots in the QDs ink is 2.5%.

[0084] In the embodiment, the thickness of each layer of the prepared OLED device is similar to that of Embodiment 1.

[0085] Embodiment 8

[0086] The difference between this embodiment and embodiment 1 is that in step S3 of this embodiment, a fluorine-containing polyimide photoresist is synthesized by using hexafluorodianhydride as a comonomer.

[0087] Example 9

[0088] The difference between this embodiment and embodiment 1 is that in step S3 of this embodiment, the inorganic salt halide is ZnBr2.

[0089] In this embodiment, the thickness of each layer of the prepared OLED device is similar to that of embodiment 1.

[0090] Based on the performance of the printed OLED devices prepared in examples 1-3 and the integrity analysis of the quantum dot layer protective film, the printed OLED device prepared from the CdS / M mixed quantum dot ink has the best electrical performance, the printed OLED device prepared from the CdSe quantum dot ink has the second best electrical performance, and the printed OLED device prepared from the CuInS2 quantum dot ink has a general electrical performance. The printed OLED device prepared from the CdSe quantum dot ink has the best QDs film forming property, the printed OLED device prepared from the CdS / M mixed quantum dot ink has the second best QDs film forming property, and the printed OLED device prepared from the CdS / M mixed quantum dot ink has a general QDs film forming property.

[0091] In summary, the selected quantum dot is CdSe, which is best for the performance of the prepared OLED device.

[0092] Based on the performance of the printed OLED devices prepared in examples 1, 6, and 7 and the integrity analysis of the quantum dot layer protective film, when the mass percentage of quantum dots in the QDs ink is 2%, the quantum dots can completely react with the inorganic salt halide, and the film forming effect is good.

[0093] Based on the performance of the printed OLED devices prepared in examples 1 and 8 and the integrity analysis of the quantum dot layer protective film, ZnBr2 and ZnCl2 and other colorless inorganic salt halides can react with quantum dots, passivate the long chains on the surface of the quantum dots, and form a functional film layer with a protective effect.

[0094] Comparative Example 1

[0095] The difference between this comparative example and embodiment 1 is that in step S3 of this embodiment, the mass percentage of ZnCl2 in the ZnCl2 ethanol solution is 20%.

[0096] Comparative Example 2

[0097] The difference between this comparative example and embodiment 1 is that in step S3 of this embodiment, the mass percentage of ZnCl2 in the ZnCl2 ethanol solution is 5%.

[0098] Comprehensive example 1, 4, 5 and comparative example 1, 2, the integrity analysis of quantum dot functional film layer, the film layer structure integrity of example 1, 4, 5 is close, and the integrity of quantum dot functional film layer of example 4, example 5 is slightly lower than example 2, and slightly concave and convex appears in comparative example 2, and the integrity of functional film layer in comparative example 1 is poor, thus it can be seen that the reaction of inorganic salt halide and quantum dot will have a saturation point, when the concentration of inorganic salt halide tends to saturation, the reaction reaches equilibrium, thus it can be concluded that the uniformity of film formation in the pixel of OLED device prepared in the concentration ratio range of inorganic salt halide in the application, the prepared OLED device emits light uniformly.

[0099] The manufacturing method of the quantum dot printed OLED device of the application, in the process of forming a protective film by QDs ink, ZnCl2 powder is added to the quantum dot material in the sub-pixel pit, so that it reacts with the quantum dot, passivates the long chain on the surface of the quantum dot, forms a functional film layer with protective effect, thereby changing the volatilization rate of local ink, and further reducing the influence of surface tension on the formation of QDs film, improving the uniformity of film formation in the pixel of printed OLED device, and further improving the yield of printed OLED device manufacturing process; the prepared OLED device emits light uniformly, and the performance is greatly improved.

[0100] As described above, the application has the above-mentioned excellent characteristics, and can improve the performance of the prior art and has practicality, and becomes a product with high practical value.

[0101] The above is only the preferred embodiment of the application, and for those skilled in the art, according to the idea of the application, the specific embodiment and application range can be changed, and the content of the specification should not be understood as the limitation of the application.

Claims

1. A method for fabricating a quantum dot printed OLED device, characterized in that, Includes the following steps: S1: Select tin oxide as the anode substrate material and perform pretreatment on the anode substrate; S2: A hole transport layer is vacuum-deposited on the anode substrate, wherein the material used for the hole transport layer is 1,2,4,5-tetra(trifluoromethyl)benzene; S3: Photolithography is used to form sub-pixel pits at the locations where pixels are to be formed. QDs ink is injected into the sub-pixel pits using inkjet printing. Then, an alcohol solution of inorganic salt halides is used to react with the QDs ink to form a functional film. S4: Vacuum evaporation of a hole-blocking layer on the surface of the functional film layer; S5: Vacuum evaporation of cathode metal Al to form a metal cathode layer; S6: UV-cured encapsulation; In step S3, the inorganic salt halide includes one of ZnCl2 and ZnBr2; and the mass percentage of the inorganic salt halide in the alcohol solution is 8-12%. In step S3, after the QDs ink injected into the sub-pixel pit dries, the alcohol solution of the inorganic salt halide is dropped onto the sub-pixel pit until it covers the entire QDs ink layer. After reacting for 3-5 minutes, it is dried. The alcohol solution of the inorganic salt halide is then applied again to cover the entire QDs ink layer. After reacting for 28-35 minutes, excess inorganic salt halide is washed away.

2. The method for fabricating a quantum dot printed OLED device according to claim 1, characterized in that, In step S3, the QDs ink is composed of quantum dots and a nonpolar solvent, and the quantum dots include one of CdSe, CuInS2, and CdS / M mixed quantum dots.

3. The method for fabricating a quantum dot printed OLED device according to claim 2, characterized in that, In step S3, the quantum dots account for 1.8-2.5% of the mass percentage of the QDs ink.

4. The method for fabricating a quantum dot printed OLED device according to claim 1, characterized in that, In step S2, the hole transport layer is made of 1,2,4,5-tetra(trifluoromethyl)benzene, and the thickness of the hole transport layer is 35-45 nm; in step S4, the hole blocking layer is made of 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, and the thickness of the hole blocking layer is 35-45 nm.

5. The method for fabricating a quantum dot printed OLED device according to claim 1, characterized in that, In step S3, the photoresist used in the photolithography process is a fluorinated resin photoresist synthesized with 2-allyl hexafluoroisopropanol as a comonomer, or a fluorinated polyimide photoresist synthesized with hexafluorodianhydride as a comonomer.

6. The method for fabricating a quantum dot printed OLED device according to claim 1, characterized in that, In step S3, the size of the sub-pixel pit ranges from 180 to 220 μm.

7. A quantum dot printed OLED device, comprising an anode substrate layer, a hole transport layer, a functional film layer, a hole blocking layer, and a metal cathode layer, characterized in that, The quantum dot printed OLED device is obtained by the fabrication method according to any one of claims 1 to 6; wherein the thickness range of each layer is as follows: the thickness of the anode substrate layer is 50-55nm, the thickness of the hole transport layer is 35-45nm, the thickness of the functional film layer is 40-60nm, the thickness of the hole blocking layer is 35-45nm, and the thickness of the metal cathode layer is 50-55nm.

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