A thermionic effect infrared detector
By designing a thermionic effect infrared detector and utilizing the photothermoelectric conversion of lead salt semiconductor thin films and metal structures, the problems of high cost, need for cooling, and slow response speed of infrared detectors have been solved, realizing a low-cost, easy-to-produce high-performance infrared detector.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NANCHANG UNIV
- Filing Date
- 2022-10-10
- Publication Date
- 2026-07-21
AI Technical Summary
Existing infrared detectors suffer from high cost, complex manufacturing processes, the need for cooling, slow response speed, and limited spectral response range, and their performance is unstable, especially in extreme environments.
The infrared detector employs thermionic effect, including an infrared detection chip, a socket, and a cap. It utilizes a structural design of lead salt semiconductor thin film, metal conductive electrode, passivation layer, and metal reflective layer to achieve detection through self-driven photothermoelectric conversion, avoiding cooling and simplifying the packaging process.
This has resulted in a low-cost, easily mass-producible infrared detector that can operate at room temperature, has an ultra-high response speed and a wide spectral response range, and improves the reliability and stability of the detector.
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Figure CN115579402B_ABST