semiconductor laser

Abstract

The application discloses a semiconductor laser, which comprises a base, a tube shell, a light-emitting chip and an optical fiber, the base is provided with a first inner cavity, the first inner cavity is filled with a phase change medium, and the phase change medium is used for absorbing heat; the tube shell is connected with the outer wall of the base, and the tube shell and the outer wall of the base enclose a second inner cavity; the light-emitting chip is arranged on the outer wall of the base and located in the second inner cavity; the optical fiber is fixed to the cavity wall of the second inner cavity, one end of the optical fiber is arranged in a spaced mode with the light-emitting chip, the other end of the optical fiber penetrates through the tube shell and extends out of the tube shell; the optical fiber is located on the output light path of the light-emitting chip; and when the light-emitting chip outputs laser to the optical fiber and generates heat, the phase change medium exchanges heat with the light-emitting chip through the base. The technical scheme of the application can realize high-efficiency cooling effect without increasing the structural complexity of the semiconductor laser.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of laser illumination device, in particular to a semiconductor laser. BACKGROUND

[0002] Semiconductor lasers are widely used in many fields, and a large amount of heat is generated during operation, which needs to be cooled, otherwise it will lead to the reduction of the efficiency and the shortening of the life of the semiconductor laser, and even the damage of the semiconductor laser.

[0003] The general cooling method is to install the semiconductor laser on the heat sink or base for cooling, or to directly place the semiconductor laser in the cooling liquid for direct cooling. In order to achieve better cooling effect, special heat sink or base design is needed, and when direct cooling is carried out by cooling liquid, special flow channel or flow field design and cooling circulation system are also needed to achieve high-efficiency and uniform cooling effect; but the semiconductor laser with flow channel or flow field and cooling circulation system increases the system complexity of the semiconductor laser, which brings inconvenience to the use of the semiconductor laser and reduces the reliability of the semiconductor laser during operation. SUMMARY

[0004] The main purpose of the present application is to provide a semiconductor laser which can achieve high-efficiency cooling effect without increasing the structural complexity of the semiconductor laser.

[0005] To achieve the above purpose, the present application provides a semiconductor laser, which comprises:

[0006] A base provided with a first inner cavity filled with a phase change medium for absorbing heat;

[0007] A tube shell connected with the outer wall of the base and surrounding the outer wall of the base to form a second inner cavity;

[0008] A light emitting chip arranged on the outer wall of the base and located in the second inner cavity; and

[0009] An optical fiber fixed to the cavity wall of the second inner cavity, one end of the optical fiber being spaced apart from the light emitting chip, the other end of the optical fiber penetrating through the tube shell and extending out of the tube shell; the optical fiber is located on the output light path of the light emitting chip.

[0010] When the light emitting chip outputs laser to the optical fiber and generates heat, the phase change medium exchanges heat with the light emitting chip through the base.

[0011] In an embodiment, the semiconductor laser further comprises a light guide cover located in the second inner cavity, two ends of the light guide cover are connected with the light emitting chip and the optical fiber respectively, and the light guide cover is located in the output light path of the light emitting chip.

[0012] In an embodiment, a heat conductive material is filled between the cavity wall of the second inner cavity and the outer wall of the light guide cover, and the heat conductive material is used to transfer the heat dissipated by the light emitting chip to the base and the tube shell.

[0013] In an embodiment, the semiconductor laser further comprises an optical coupling lens, which is arranged on the inner wall of the light guide cover and used to collimate and concentrate the laser output by the light emitting chip to the optical fiber.

[0014] In an embodiment, the inner wall of the light guide cover is provided with a reflective film.

[0015] In an embodiment, the tube shell comprises:

[0016] an outer shell connected with the outer wall of the base; and

[0017] an inner shell connected with the outer wall of the base and located in the outer shell; the outer wall of the inner shell, the inner wall of the outer shell and the outer wall of the base enclose a third inner cavity, and the third inner cavity is filled with a phase change medium; and the inner wall of the inner shell and the outer wall of the base enclose the second inner cavity.

[0018] In an embodiment, the light emitting chip comprises:

[0019] a heat conductive heat sink arranged on the outer wall of the base and located in the second inner cavity; and the heat conductive heat sink is spaced apart from the optical fiber; and

[0020] a chip body arranged on the side of the heat conductive heat sink away from the base.

[0021] In an embodiment, a heat conductive adhesive is arranged between the heat conductive heat sink and the chip body.

[0022] In an embodiment, the first inner cavity is further filled with a nano material, and the nano material is mixed with the phase change material.

[0023] In an embodiment, the semiconductor laser further comprises a heat conductive base, which is detachably connected with the outer wall of the base, the outer wall of the heat conductive base is attached to the outer wall of the base, and the heat conductive base is arranged opposite to the tube shell; the heat conductive base is provided with a fourth inner cavity, and the fourth inner cavity is filled with a phase change medium.

[0024] The semiconductor laser of the technical scheme of the present application comprises a base, a tube shell, a light-emitting chip and an optical fiber, the base is provided with a first inner cavity, the first inner cavity is filled with a phase change medium, and the phase change medium is used for absorbing heat; the tube shell is connected with the outer wall of the base, and the tube shell and the outer wall of the base enclose to form a second inner cavity; the light-emitting chip is arranged on the outer wall of the base and located in the second inner cavity; the optical fiber is fixed to the cavity wall of the second inner cavity, one end of the optical fiber is arranged in space from the light-emitting chip, and the other end of the optical fiber penetrates through the tube shell and extends out of the tube shell; the optical fiber is located on the output light path of the light-emitting chip; wherein when the light-emitting chip outputs laser to the optical fiber and generates heat, the phase change medium exchanges heat with the light-emitting chip through the base; the heat generated by the light-emitting chip can be transmitted to the base, so that the light-emitting chip indirectly exchanges heat with the phase change medium in the first inner cavity through the base, and phase change occurs, so that the phase change medium can absorb the heat transmitted from the base, and then the phase change medium cools the light-emitting chip, thereby reducing the temperature inside the semiconductor laser and improving the reliability of the semiconductor laser in operation; the semiconductor laser does not need to be cooled specially in operation, and cooling is implemented when the semiconductor laser is not in operation, so that the cooling operation of the semiconductor laser in operation becomes simple and efficient, thereby reducing the structural complexity of the semiconductor laser. BRIEF DESCRIPTION OF DRAWINGS

[0025] In order to more clearly illustrate the technical schemes in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of the drawings shown.

[0026] Figure 1 It is a sectional view of the semiconductor laser of the present application.

[0027] BRIEF DESCRIPTION OF DRAWINGS

[0028]

[0029]

[0030] The implementation of the present application, functional characteristics and advantages will be further described with reference to the embodiments and drawings. DETAILED DESCRIPTION

[0031] The technical schemes in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor belong to the scope of protection of the present application.

[0032] It should be noted that all directional indications, such as upper, lower, left, right, front, back, etc., are only used to explain the relative position relationship, movement condition, etc. between components in a certain posture (as shown in the drawings), and if the certain posture changes, the directional indications will also change accordingly.

[0033] In addition, the description involving "first", "second" and the like in the present application is only for the purpose of description, and cannot be understood as indicating or implying the relative importance of the indicated technical features or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In addition, the technical solutions of various embodiments can be combined with each other, but it must be based on the realization of ordinary skilled in the art, when the combination of technical solutions appears contradictory or unachievable, it should be considered that the combination of technical solutions does not exist, nor within the protection scope required by the present application.

[0034] The present application provides a semiconductor laser.

[0035] In the embodiments of the present application, with reference to Figure 1 The semiconductor laser comprises a base 10, a tube shell 30, a light-emitting chip 40 and an optical fiber 50. The base 10 is provided with a first inner cavity 10a, and the first inner cavity 10a is filled with a phase change medium 20, which is used for absorbing heat. The tube shell 30 is connected with the outer wall of the base 10, and the tube shell 30 and the outer wall of the base 10 enclose a second inner cavity 30a. The light-emitting chip 40 is arranged on the outer wall of the base 10 and located in the second inner cavity 30a. The optical fiber 50 is fixed to the cavity wall of the second inner cavity 30a. One end of the optical fiber 50 is arranged in a spaced manner with the light-emitting chip 40, and the other end of the optical fiber 50 penetrates through the tube shell 30 and extends out of the tube shell 30. The optical fiber 50 is located on the output light path of the light-emitting chip 40. When the light-emitting chip 40 outputs laser 1 to the optical fiber 50 and generates heat, the phase change medium 20 exchanges heat with the light-emitting chip 40 through the base 10.

[0036] Specifically, when the light emitting chip 40 emits laser light 1 to light rays, until the light emitting chip 40 continues for a period of time and generates heat, because the light emitting chip 40 and the side wall of the base 10 are directly connected, so that the heat generated by the light emitting chip 40 can be transmitted to the base 10, so that the light emitting chip 40 is indirectly exchanged with the phase change medium 20 in the first inner cavity 10a through the base 10, at this time, the phase change medium 20 will change phase when absorbing heat, when the phase change medium 20 changes phase, because the molecules rearrange and the molecular thermal motion speed changes, the phase change medium 20 gradually changes from solid to liquid, so that the phase change medium 20 can absorb the heat transmitted from the base 10, and then the phase change medium 20 cools the light emitting chip 40, reduces the temperature inside the semiconductor laser, ensures that the semiconductor laser stably emits laser light 1, and improves the reliability of the semiconductor laser.

[0037] When the phase change medium 20 completely changes to liquid, the phase change medium 20 no longer absorbs heat. At this time, the semiconductor laser stops working, and the base 10 and the tube shell 30 of the semiconductor laser are simply cooled to take away the heat in the phase change medium 20 and make it change back to solid. In this way, the semiconductor laser does not need to be cooled specially when working, and is cooled when not working, so that the cooling work of the semiconductor laser when working becomes simple and efficient, the reliability of the semiconductor laser is improved, and the structural complexity of the semiconductor laser is reduced.

[0038] It is worth noting that in addition to phase change, the nature of the phase change medium 20 does not change after absorbing heat, so the phase change medium 20 is relatively stable in the first inner cavity 10a and is not easy to have a substantial impact on the base 10 and the light emitting chip 40. The base 10 and the tube shell 30 are made of heat-conducting material 70, which is convenient for heat transfer.

[0039] Referring to Figure 1 The semiconductor laser further includes a light guide cover 60 located in the second inner cavity 30a, both ends of the light guide cover 60 are connected with the light emitting chip 40 and the optical fiber 50 respectively, and the light guide cover 60 is located in the output light path of the light emitting chip 40.

[0040] Specifically, by setting the light guide cover 60 between the light emitting chip 40 and the optical fiber 50, when the light emitting chip 40 emits laser light 1, the laser light 1 can be repeatedly reflected by the inner wall of the light guide cover 60 to the optical fiber 50, and is not easy to diffuse in other positions, so that the laser light 1 emitted by the light emitting chip 40 can be better transmitted to the optical fiber 50, and the light output of the semiconductor laser is increased.

[0041] Optionally, the light guide cover 60 is a long strip-shaped shell, and the inner wall of the light guide cover 60 is provided with a plurality of elongated light guide wires. In this way, the laser 1 can be more easily concentrated and transmitted to the optical fiber 50 through the plurality of light guide wires, further increasing the light output of the semiconductor laser 1.

[0042] With reference to Figure 1 The cavity wall of the second inner cavity 30a and the outer wall of the light guide cover 60 are filled with a heat-conducting material 70, which is used to transfer the heat generated by the light-emitting chip 40 to the base 10 and the tube shell 30.

[0043] Specifically, when the light-emitting chip 40 emits laser 1 under power, not all of the laser 1 can be transmitted to the optical fiber 50, and the laser 1 that is not transmitted to the optical fiber 50 will form a certain amount of heat. The end of the optical fiber 50 will also generate a certain amount of heat when working at high power. In order to dissipate the heat generated by the laser 1 that is not transmitted to the optical fiber 50 and the heat generated by the end of the optical fiber 50 to the external environment, the embodiment fills the cavity wall of the second inner cavity 30a and the outer wall of the light guide cover 60 with a heat-conducting material 70. The heat-conducting material 70 can efficiently conduct the heat to the tube shell 30, the base 10, and the phase change material. In this way, the internal heat can be dissipated, the temperature inside the semiconductor laser is reduced, the working reliability is improved, and the heat dissipation effect of the semiconductor laser is improved.

[0044] With reference to Figure 1 The semiconductor laser 1 also includes an optical coupling lens 80, which is arranged on the inner wall of the light guide cover 60 and is used to collimate and concentrate the laser 1 output by the light-emitting chip 40 to the optical fiber 50.

[0045] Specifically, the optical coupling lens 80 includes at least two beam expanders, which are arranged in layers. The beam expanders first expand the light beam and then focus it, resulting in a smaller focal point. The beam expanders can improve the collimation characteristics of the laser 1 light beam. In this way, the laser 1 output by the light-emitting chip 40 can be more easily concentrated to the optical fiber 50 through the two beam expanders, increasing the light output of the semiconductor laser 1 and improving the light output effect of the semiconductor laser 1.

[0046] Further, the inner wall of the light guide cover 60 is provided with a reflective film. In this way, when part of the laser 1 emitted by the light-emitting chip 40 diffuses to the inner wall of the light guide cover 60, the laser 1 can be reflected back to the normal output light path by the reflective film and continue to the optical fiber 50.

[0047] With reference to Figure 1The pipe shell 30 comprises an outer shell 31 and an inner shell 32, the outer shell 31 is connected with the outer wall of the base 10; the inner shell 32 is connected with the outer wall of the base 10 and is located in the outer shell 31; and the outer wall of the inner shell 32, the inner wall of the outer shell 31 and the outer wall of the base 10 enclose a third inner cavity 30b, the third inner cavity 30b is filled with the phase change medium 20; and the inner wall of the inner shell 32 and the outer wall of the base 10 enclose a second inner cavity 30a.

[0048] Specifically, by setting the pipe shell 30 as a double-layer shell comprising the inner shell 32 and the outer shell 31, and setting the phase change medium 20 in the third inner cavity 30b between the outer shell 31 and the inner shell 32, the heat generated by the laser 1 not transmitted to the optical fiber 50 and the heat generated by the end of the optical fiber 50 can be absorbed by the phase change medium 20 in the third inner cavity 30b, further improving the heat dissipation effect of the pipe shell 30.

[0049] In other embodiments, the pipe shell 30 can also be set as a plurality of inner shells 32 cooperating with one outer shell 31, and the plurality of inner shells 32 and the one outer shell 31 are sequentially stacked, thereby further improving the heat dissipation effect of the pipe shell 30. The number of the inner shells 32 is not specifically limited here and can be set according to actual heat dissipation requirements.

[0050] Referring to Figure 1 The light emitting chip 40 comprises a heat-conducting heat sink 41 and a chip body 42, the heat-conducting heat sink 41 is arranged on the outer wall of the base 10 and located in the second inner cavity 30a; and the heat-conducting heat sink 41 is spaced apart from the optical fiber 50; and the chip body 42 is arranged on the heat-conducting heat sink 41.

[0051] The heat-conducting heat sink 41 is made of a material with good heat-conducting performance, and the chip body 42 is in contact with the base 10 through the heat-conducting heat sink 41, thereby further increasing the contact area of the chip body 42 and the base 10, making the chip body 42 contact with the base 10 through the heat-conducting heat sink 41 with a larger contact area, accelerating the heat dissipation speed of the chip body 42, and thereby improving the heat dissipation effect of the light emitting chip 40. The heat-conducting heat sink 41 can be set in various shapes.

[0052] Optionally, a groove is arranged on the side of the heat-conducting heat sink 41 away from the base 10, and the chip body 42 is arranged on the groove wall, so that the position of the chip body 42 is limited by the groove wall, and the contact area of the chip body 42 and the heat-conducting heat sink 41 is increased, thereby accelerating the heat transfer speed of the chip body 42 and the heat-conducting heat sink 41.

[0053] Optionally, a heat-conducting glue is arranged between the heat-conducting heat sink 41 and the chip body 42. In this way, the heat-conducting glue not only realizes the connection of the heat-conducting heat sink 41 and the chip body 42, but also guarantees the heat transfer of the heat-conducting heat sink 41 and the chip body 42; and the heat-conducting glue can seal the gap between the heat-conducting heat sink 41 and the chip body 42, which is more conducive to the heat transfer from the chip body 42 to the heat-conducting heat sink 41.

[0054] Optionally, the length of the heat-conducting heat sink 41 is the same as the length of the base 10, so that the heat-conducting heat sink 41 can uniformly transmit heat to the base 10, thereby accelerating the speed of the phase change medium 20 in the base 10 to absorb heat.

[0055] Optionally, the light-emitting chip 40 further comprises a plurality of heat-conducting strips arranged on both sides of the heat-conducting heat sink 41, and the heat-conducting strips arranged on the same side of the heat-conducting heat sink 41 are arranged at intervals; in this way, the heat-conducting heat sink 41 can uniformly transmit heat to the top surface of the base 10 through the plurality of heat-conducting strips, thereby further accelerating the speed of the phase change medium 20 in the base 10 to absorb heat.

[0056] Referring to Figure 1 , the first inner cavity 10a is also filled with nanomaterials, and the nanomaterials are mixed with the phase change medium 20.

[0057] By adding nanomaterials to the first inner cavity 10a, the thermal conductivity of the phase change medium 20 can be enhanced. The nanomaterials can be nanoparticles (copper, copper oxide, aluminum, silicon dioxide, etc.), nanosheets, nanowires, nanotubes, and nanofibers, etc.

[0058] By adding nanoscale metal or metal oxide particles in a certain way and proportion to the phase change medium 20, a new heat transfer enhancement medium is formed. The reason for the increase in the thermal conductivity of the nanofluid is that the addition of solid particles changes the structure of the base liquid and enhances the energy transfer process inside the mixture, thereby increasing the thermal conductivity. The small size effect of the nanoparticles causes micro-convection to exist between the particles and the liquid, which enhances the energy transfer process between the particles and the liquid, increases the thermal conductivity of the nanofluid, and thereby enhances the thermal conductivity of the phase change medium 20.

[0059] Referring to Figure 1 , the semiconductor laser 1 further comprises a heat-conducting seat, the heat-conducting seat is detachably connected with the outer wall of the base 10, the outer wall of the heat-conducting seat is attached with the outer wall of the base 10, and the heat-conducting seat is arranged opposite to the tube shell 30; the heat-conducting seat is provided with a fourth inner cavity, and the fourth inner cavity is filled with the phase change medium 20.

[0060] Specifically, the detachable connection between the heat-conducting seat and the base 10 can be magnetic attraction connection, buckle connection, or screw connection, etc. By detachably connecting the heat-conducting seat with the base 10, the semiconductor laser 1 can increase or remove the heat-conducting seat according to the actual heat dissipation requirement, so that the semiconductor laser is more convenient to dissipate heat.

[0061] The above description is only the preferred embodiment of the present application, and does not limit the patent scope of the present application. Any equivalent structural transformation made according to the content of the present application specification and drawings, or direct / indirect application in other related technical fields is included in the patent protection scope of the present application.

Claims

1. A semiconductor laser, characterized by, The semiconductor laser comprises: a base provided with a first inner cavity filled with a phase change medium for absorbing heat; a shell connected with the outer wall of the base and surrounding the outer wall of the base to form a second inner cavity; a light emitting chip arranged on the outer wall of the base and located in the second inner cavity; and an optical fiber fixed on the cavity wall of the second inner cavity, one end of the optical fiber being arranged in space from the light emitting chip, the other end of the optical fiber penetrating through the shell and extending out of the shell, the optical fiber being located on the output light path of the light emitting chip; wherein when the light emitting chip outputs laser to the optical fiber and generates heat, the phase change medium exchanges heat with the light emitting chip through the base.

2. The semiconductor laser of claim 1, wherein, The semiconductor laser further comprises a light guide cover located in the second inner cavity, two ends of the light guide cover being connected with the light emitting chip and the optical fiber respectively, the light guide cover being located on the output light path of the light emitting chip.

3. The semiconductor laser of claim 2, wherein, The cavity wall of the second inner cavity and the outer wall of the light guide cover are filled with a heat conductive material for transferring the heat generated by the light emitting chip to the base and the shell.

4. The semiconductor laser of claim 3, wherein, The semiconductor laser further comprises an optical coupling lens arranged on the inner wall of the light guide cover for collimating and concentrating the laser output by the light emitting chip to the optical fiber.

5. The semiconductor laser of claim 2, wherein, The inner wall of the light guide cover is provided with a reflective film.

6. The semiconductor laser of claim 1, wherein, The shell comprises: an outer shell connected with the outer wall of the base; and an inner shell connected with the outer wall of the base and located in the outer shell, the outer wall of the inner shell, the inner wall of the outer shell and the outer wall of the base surrounding a third inner cavity filled with a phase change medium, the inner wall of the inner shell and the outer wall of the base surrounding the second inner cavity.

7. The semiconductor laser of claim 1, wherein, The light emitting chip comprises: a heat conductive heat sink arranged on the outer wall of the base and located in the second inner cavity, the heat conductive heat sink being arranged in space from the optical fiber; and a chip body arranged on the side of the heat conductive heat sink away from the base.

8. The semiconductor laser of claim 7, wherein the first and second waveguides are formed by etching a portion of the first and second cladding layers, respectively. Thermal conductive glue is arranged between the heat conductive heat sink and the chip body.

9. The semiconductor laser of claim 1, wherein, The first inner cavity is further filled with nano materials, the nano materials being mixed with the phase change medium.

10. The semiconductor laser of claim 1, wherein, The semiconductor laser further comprises a heat conductive base detachably connected with the outer wall of the base, the outer wall of the heat conductive base being attached to the outer wall of the base and arranged opposite to the shell, the heat conductive base being provided with a fourth inner cavity filled with a phase change medium.

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