Tunable Multimode Microcavity Light Emitter Based on Two-Dimensional Layered Semiconductor and Its Fabrication Method

Abstract

This invention relates to a tunable multimode microcavity light emitter based on a two-dimensional layered semiconductor and its fabrication method, belonging to the field of microcavity light emitter technology. The emitter, from bottom to top, comprises a bottom DBR substrate, a two-dimensional layered semiconductor, a PMMA film, and a top DBR substrate. The cavity length, number of cavity films, and position of the light emitter microcavity are precisely controlled by adjusting the thickness of the PMMA film. The method steps are as follows: First, bottom and top DBR substrates are prepared; then, a two-dimensional layered semiconductor is prepared on the bottom DBR substrate; next, PMMA is spin-coated onto its surface, and the top DBR substrate is bonded on top of the PMMA; finally, the cavity length, number of cavity films, and position of the multimode microcavity light emitter are finely adjusted using a micro-angle-resolved spectrometer to obtain the multimode microcavity light emitter. This invention achieves multiple light modes of emission from the microcavity light emitter through PMMA bonding, as well as controllable adjustment of the microcavity modes and reusability of DBR and two-dimensional layered semiconductor materials, significantly reducing the fabrication difficulty and cost of the microcavity.

Description

Technical Field

[0001] This invention belongs to the field of microcavity light emitter technology, specifically relating to a tunable multimode microcavity light emitter based on two-dimensional layered semiconductors and its fabrication method. Background Technology

[0002] Optical microcavities are resonant cavity structures that can confine light waves of a specific wavelength within an extremely small mode volume. They possess both a small mode volume (V) and a high quality factor (Q), making them valuable for applications in precision measurement, low-threshold lasers, optical sensors, optical filters, and optical communication devices. Currently, there are three main types of optical microcavities: Fabry-Perot (FP) microcavities, whispering-gallery-mode (WGM) microcavities, and photonic crystal microcavities. Among these, photonic crystal microcavities offer both a high quality factor and an extremely small mode volume. By embedding a thin layer of semiconductor material with a high exciton binding energy into the active region of a photonic crystal microcavity, it can be fabricated into a semiconductor microcavity device.

[0003] Traditional semiconductor microcavity devices suffer from limited modes and complex fabrication processes. Once integrated, these devices are non-removable, and their modes cannot be controlled. Therefore, developing a semiconductor microcavity device with diverse modes and adjustable controllability holds great promise for both scientific research and practical applications. Summary of the Invention

[0004] The technical problem to be solved:

[0005] To overcome the shortcomings of existing technologies, this invention provides a tunable multimode microcavity light emitter based on two-dimensional layered semiconductors and its fabrication method. Polymethyl methacrylate (PMMA) is used to bond a top DBR substrate and a bottom DBR substrate with two-dimensional layered semiconductors together, and the elastic deformation characteristics of PMMA are utilized to precisely control the microcavity length of the light emitter. First, based on the acetone-soluble property of PMMA, the integrated light emitter microcavity can be disassembled, and the microcavity length can be readjusted using PMMA, achieving the reuse of DBR and two-dimensional semiconductor materials. Second, by adjusting the thickness of PMMA, the microcavity length, number of cavity films, and their positions can be precisely controlled.

[0006] The technical solution of the present invention is: a tunable multimode microcavity light emitter based on a two-dimensional layered semiconductor, comprising, from bottom to top, a bottom DBR substrate, a two-dimensional layered semiconductor, a polymethyl methacrylate (PMMA) film, and a top DBR substrate; the thickness of the PMMA film can be precisely adjusted, and by adjusting its thickness, the cavity length, number of cavity films, and position of the light emitter microcavity can be controlled.

[0007] A further technical solution of the present invention is: the bottom DBR substrate includes a silicon wafer substrate and a bottom DBR, and the top DBR substrate includes a quartz substrate and a top DBR.

[0008] A further technical solution of the present invention is that the thickness of the polymethyl methacrylate (PMMA) film is between 100-2000 nm.

[0009] A method for fabricating a tunable multimode microcavity light emitter based on a two-dimensional layered semiconductor, characterized by the following specific steps:

[0010] Step 1: Prepare the bottom DBR substrate and the top DBR substrate;

[0011] Step 2: Fabricate a two-dimensional layered semiconductor material on the bottom DBR substrate;

[0012] Step 3: Use a spin coater to spin coat polymethyl methacrylate (PMMA) onto the bottom DBR substrate with two-dimensional layered semiconductors to form a PMMA film. Then, place the top DBR substrate with the top DBR facing down on the upper surface of the PMMA film to complete the bonding of the bottom DBR substrate and the top DBR substrate and the coarse adjustment of the cavity length, number of cavity films and position.

[0013] Step 4: Place the bonded bottom DBR substrate and top DBR substrate on the stage of the micro-angle-resolved spectrometer. Adjust the stage height so that the light spot is focused on the surface of the two-dimensional layered semiconductor. Use the sample holder to fix the distance between the top DBR and the objective lens. Apply uniaxial stress to the bottom DBR substrate by using a nanoscale Z-axis displacement motor stage to adjust the microcavity length of the light emitter at the nanoscale. Combine the angle-resolved reflection spectrum in the vertical direction to control the microcavity length in real time, and finally obtain the desired two-dimensional semiconductor multimode microcavity structure, i.e., the multimode microcavity light emitter.

[0014] A further technical solution of the present invention is: a cavity length transformation method for the two-dimensional semiconductor multimode microcavity structure.

[0015] First, the two-dimensional semiconductor multimode microcavity structure was immersed in acetone solution to remove the polymethyl methacrylate (PMMA) film in the microcavity, and the top DBR substrate and the bottom DBR substrate with two-dimensional layered semiconductor were separated and disassembled.

[0016] Then, repeat steps 3 and 4, and adjust the height between the two DBR substrates coarsely and finely according to the different cavity length requirements to obtain the two-dimensional semiconductor multimode microcavity structure after changing the cavity length.

[0017] Based on the above operations, mode modulation of the microcavity of the multimode microcavity optical emitter and the reuse of DBR and two-dimensional semiconductor materials are realized.

[0018] A further technical solution of the present invention is as follows: In step 1, firstly, the center wavelength λ of the distributed Bragg reflector (DBR) is determined according to the position of the exciton band of the two-dimensional layered semiconductor material used in the active region. c ;

[0019] Then, low-refractive-index and high-refractive-index dielectric film materials with different log numbers were alternately deposited on a standard silicon wafer and a quartz substrate using high-vacuum electron beam evaporation technology, respectively, to obtain two DBR substrates with different numbers of dielectric film logs; the standard silicon wafer had more DBR logs and was the bottom DBR of the multimode microcavity, while the quartz substrate had fewer DBR logs and was the top DBR of the multimode microcavity.

[0020] A further technical solution of the present invention is: the thickness of the low refractive index dielectric film is The thickness of the high refractive index dielectric film is Where d a d represents the thickness of a single-layer low-refractive-index dielectric film. b λ is the thickness of a single-layer high-refractive-index dielectric film. c The position of the center wavelength of the DBR substrate, n a n is the refractive index of the low-refractive-index dielectric film. b The refractive index is the refractive index of the high refractive index dielectric film.

[0021] A further technical solution of the present invention is: the thickness of each dielectric film layer in the DBR substrate is one-quarter of the optical wavelength, i.e. Two dielectric film materials are alternately distributed. First, a low-refractive-index dielectric film material is deposited, followed by a high-refractive-index dielectric film material, so that the reflectivity at the bandgap of the DBR substrate reaches more than 99%, thereby forming a high-reflectivity distributed Bragg mirror structure.

[0022] A further technical solution of the present invention is: in step 2, the required two-dimensional layered semiconductor material is prepared directly on the bottom DBR substrate by mechanical stripping, chemical vapor deposition or liquid phase growth.

[0023] A further technical solution of the present invention is that the gain medium material used in the multimode microcavity light emitter is a two-dimensional layered semiconductor material, namely, a transition metal chalcogenide, perovskite, or a two-dimensional van der Waals heterojunction.

[0024] Beneficial effects

[0025] The beneficial effects of this invention are as follows:

[0026] (1) Traditional semiconductor microcavity light emitters have a single mode in the active region, thus the types of light generated are limited. However, the present invention can generate multiple light modes in the active region, providing the possibility for multi-mode light emission from the same semiconductor microcavity light emitter.

[0027] (2) The process of controlling the active region cavity length of traditional semiconductor microcavity light emitters is complicated. However, this invention uses PMMA to fill the active region of the microcavity, and coarsely adjusts the cavity length by adjusting the spin coater speed and duration. It also precisely controls the cavity length by applying uniaxial stress combined with angle-resolved reflection spectroscopy.

[0028] (3) Once the microcavity of a traditional semiconductor microcavity light emitter is integrated, it cannot be disassembled and the mode cannot be controlled. However, this invention uses PMMA to bond the DBR substrate. After the microcavity light emitter is used, it can be disassembled with acetone. The mode of the multimode microcavity light emitter can be readjusted by re-dropping and processing PMMA. At the same time, it can also achieve the purpose of reusing DBR and two-dimensional semiconductor materials, thereby greatly reducing the fabrication difficulty and manufacturing cost of multimode microcavity light emitters. Attached Figure Description

[0029] Figure 1 (a) is a schematic diagram of the two-dimensional layered semiconductor material on the bottom DBR substrate; (b) is an optical image of a single-layer WS2 sample on the bottom DBR substrate, where the dashed line represents the single-layer sample area.

[0030] Figure 2 (a) is a microcavity diagram after the integration of DBR substrate and two-dimensional layered semiconductor material; (b) is a schematic diagram of a multimode microcavity structure in which two DBR substrates are bonded together using PMMA; and (c) is an optical image of the microcavity structure, where the dashed line represents the single-layer sample area.

[0031] Figure 3 (a) is the angle-resolved reflection spectrum of a conventional microcavity and a multimode microcavity when white light is incident perpendicularly; (b) is the angle-resolved reflection spectrum of a conventional microcavity when white light is incident perpendicularly; and (c) is the angle-resolved reflection spectrum of a multimode microcavity when white light is incident perpendicularly.

[0032] Figure 4 These are the angle-resolved reflection spectra of multimode microcavities with different cavity lengths when white light is incident perpendicularly.

[0033] Figure labeling: 1. Silicon substrate, 2. Bottom DBR, 3. Two-dimensional layered semiconductor; 4. Polymethyl methacrylate (PMMA) film, 5. Top DBR, 6. Quartz substrate. Detailed Implementation

[0034] The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the invention, and should not be construed as limiting the invention.

[0035] Example 1

[0036] This example provides a multimode microcavity light emitter and its fabrication method that utilizes a gold-assisted mechanically exfoliated monolayer WS2 sample as the gain medium, including the following steps:

[0037] (1) Fabrication of the bottom DBR substrate of the multimode microcavity:

[0038] (a) Place a standard silicon wafer (500 μm thick) in the vacuum chamber of a high-vacuum electron beam evaporation machine and evacuate it to a vacuum level of 10. -4 ~10 -6 Torr;

[0039] (b) Turn on the electron beam evaporation equipment, first evaporate a layer of SiO2 (thickness of 110 μm, evaporation rate of 0.6 nm / min) on the silicon wafer surface, then evaporate a layer of TiO2 (thickness of 70 μm, evaporation rate of 0.6 nm / min) on the SiO2 surface, repeat the above SiO2 and TiO2 evaporation steps, and evaporate a total of 8.5 pairs of SiO2 / TiO2 dielectric films on the silicon substrate, during which the temperature in the vacuum chamber is controlled at 20 to 80 °C;

[0040] (c) After the evaporation is completed, the silicon wafer is removed, and the required bottom DBR substrate is obtained.

[0041] (2) Fabrication of the top DBR substrate of the multimode microcavity:

[0042] (a) Place a standard quartz substrate (100 μm thick) in the vacuum chamber of a high-vacuum electron beam evaporation machine and evacuate it to a vacuum level of 10. -4 ~10 -6 Torr;

[0043] (b) Turn on the electron beam evaporation equipment, first evaporate a layer of SiO2 (thickness of 110 μm, evaporation rate of 0.6 nm / min) on the silicon wafer surface, then evaporate a layer of TiO2 (thickness of 70 μm, evaporation rate of 0.6 nm / min) on the SiO2 surface, repeat the above SiO2 and TiO2 evaporation steps, and evaporate a total of 6 pairs of SiO2 / TiO2 dielectric films on the silicon substrate, during which the temperature in the vacuum chamber is controlled at 20 to 80°C;

[0044] (c) After the evaporation is completed, the silicon wafer is removed, and the desired top DBR substrate is obtained.

[0045] (3) Acquisition of monolayer WS2 samples:

[0046] (a) Use metal tweezers to peel off several WS2 sheet-like samples with a size of about 3mm × 3mm from the pre-prepared high-purity WS2 crystal source. Place the WS2 sheet-like samples parallel to each other on several mechanically peelable blue films with a size of about 1.5cm × 1.5cm.

[0047] (b) Take a clean glass slide and stick a 1cm × 5cm strip of 3M double-sided tape on it. Then, align the portion of the mechanically exfoliating blue film with the WS2 sheet layer attached to it with the 3M double-sided tape on the slide and press gently. Then, quickly remove the mechanically exfoliating blue film. Repeat the above steps to obtain multiple WS2 sheet-like samples with a relatively thick layer on the 3M double-sided tape.

[0048] (c) Place the tungsten boat containing pure gold particles and the 3M double-sided adhesive tape with the WS2 lamellar sample attached into the vacuum chamber of the vacuum evaporation machine, and evacuate the vacuum to 3.7 × 10⁻⁶. -6 Torr, turn on the vacuum evaporation machine, and deposit a gold film of about 40 nm on the surface of the 3M double-sided adhesive and WS2 sheet-like sample at a rate of 3 nm / min;

[0049] (d) Use 0.5cm×2cm heat release tape to remove the gold film from the 3M double-sided tape along with the layered WS2 sample, and transfer it to the pre-prepared bottom DBR substrate (approximately 1cm×1cm in size). Then place it on a heating stage at 100°C for heating, so that the gold film and the layered WS2 sample are deposited on the bottom DBR substrate.

[0050] (e) Place the DBR substrate with gold film and layered WS2 sample in an aqueous solution of I2 / KI (0.025 g / mL and 0.1 g / mL mixed solution of I2 and KI) for 10 min to remove the gold film on the surface of the DBR substrate. Then take it out and soak it in deionized water for 5 min, then soak it in isopropanol for 5 min. Finally, blow it dry with nitrogen gas and observe it under a microscope to find a suitable monolayer WS2 sample (effective radius should be greater than 10 μm).

[0051] (4) Coarse adjustment of the cavity length of the multimode microcavity light emitter:

[0052] (a) Place the DBR substrate with the monolayer WS2 sample on a spin coater and drop a drop of PMMA on its surface;

[0053] (b) Adjust the spin coater speed to 1500 r / min and set the spin coating time to 60 s;

[0054] (c) After spin coating, the top DBR substrate is placed face down on the surface of the DBR substrate with the single-layer WS2 sample to obtain a multimode microcavity with coarsely adjusted cavity length.

[0055] (5) Fine-tuning of the cavity length of the multimode microcavity light emitter:

[0056] (a) After coarsely adjusting the multimode microcavity, place it on the nanoscale Z-axis displacement motor stage of the micro angle-resolved spectrometer and focus the light spot onto the monolayer WS2 sample in the active region;

[0057] (b) Use a sample holder to fix the distance between the microscope objective lens and the top DBR of the microcavity;

[0058] (c) Turn on the real-time observation function of the micro-angle-resolved spectrometer and observe the angle-resolved reflectance spectral signal perpendicular to the microcavity direction to determine the position of the microcavity membrane.

[0059] (d) Adjust the knob of the nanoscale Z-axis displacement motor stage to change the height of the DBR at the bottom of the microcavity, thereby achieving effective control of the microcavity length and the position of the cavity membrane;

[0060] (e) Observe the changes in the position of the cavity membrane in the angle-resolved reflectance spectrum to fine-tune the cavity length of the multimode microcavity light emitter.

[0061] (6) Disassembly and cavity mode adjustment of the multimode microcavity optical emitter:

[0062] (a) PMMA was removed by immersion in acetone solution to obtain a bottom DBR substrate with a monolayer WS2 sample and an empty top DBR substrate. The substrate was then immersed in isopropanol solution for 5 min and then removed and dried with nitrogen.

[0063] (b) Repeat steps (4) and (5) according to the cavity length requirements to achieve the purpose of mode modulation of the multimode microcavity optical emitter and the reuse of DBR and two-dimensional semiconductor materials.

[0064] Figure 1 Figure (a) shows a schematic diagram of the monolayer WS2 sample on the bottom DBR substrate, which was prepared by growing 8.5 pairs of SiO2 / TiO2 dielectric films on a standard silicon wafer using high-vacuum electron beam evaporation. Figure (b) shows an optical photograph of the monolayer WS2 on the bottom DBR substrate, with the dashed line representing the monolayer WS2 sample.

[0065] Figure 2Figure (a) shows a schematic diagram of the microcavity structure of the multimode microcavity light emitter prepared in this invention. It consists of two DBR substrates, upper and lower, bonded together with PMMA. The bottom DBR substrate has higher reflectivity, while the top DBR substrate has lower reflectivity. Figure (b) shows an optical photograph of the microcavity of the multimode microcavity light emitter prepared in this invention. The dashed line indicates the location of the single-layer WS2 sample.

[0066] Figure 3 Figures (a) and (b) show the angle-resolved reflection spectra of a conventional microcavity and a multimode microcavity when white light is incident perpendicularly, respectively. It can be seen from the figures that, compared with the conventional microcavity having only one cavity photonic mode (CM) at the photonic crystal bandgap, the multimode microcavity designed in this invention has multiple cavity photonic modes at the photonic crystal bandgap.

[0067] Figure 4 The figures show the angle-resolved reflectance spectra of multimode microcavities with different cavity lengths when white light is incident perpendicularly. The arrows in the figures indicate different types of cavity photon modes at the bandgap. It is clear from the figures that the cavity photon modes change significantly with the change of cavity length.

[0068] Example 2

[0069] This example provides a method for preparing thin-layer CsPbBr3 using chemical vapor deposition, including the following steps:

[0070] (1) Fabrication of the bottom DBR substrate of the multimode microcavity

[0071] The fabrication method is the same as that of the bottom DBR substrate in Example 1.

[0072] (2) Fabrication of the top DBR substrate of the multimode microcavity

[0073] The fabrication method is the same as that of the top DBR substrate in Example 1.

[0074] (3) Obtaining thin-layer CsPbBr3

[0075] (a) Cut two DBR substrates with different logarithmic dielectric films into rectangles of 1.5cm×2cm, and place them in acetone solvent, isopropanol solvent and deionized water respectively for ultrasonic cleaning for 5-10 minutes. Then take them out and dry them with high-purity argon gas (purity of 99.999%).

[0076] (b) Weigh 3 mg of CsBr and 5 mg of PbBr2 samples using an analytical balance and grind them thoroughly in a mortar. Pour the mixture into the middle of an alumina boat that is 10 cm long and 1.5 cm wide. Then, invert the bottom DBR substrate onto the middle of another identical alumina boat.

[0077] (c) Place the first alumina boat in the middle of the tube furnace and place the second alumina boat 13-15 cm away from the right side of the first alumina boat.

[0078] (d) Before heating, the pressure inside the quartz tube is first pumped down to below 0.3 Torr, and then high-purity argon gas (purity of 99.999%) is introduced for 10 minutes at a flow rate of 100 sccm to remove air and water vapor from the quartz tube. After that, the argon gas flow rate is reduced to 90 sccm to be used as the carrier gas for chemical vapor deposition.

[0079] (e) Turn on the tube furnace heating function, raise the furnace temperature to 700°C at a heating rate of 10°C / min, hold for 10 min, and then lower the furnace temperature to room temperature at a cooling rate of 5°C / min.

[0080] (f) Remove the substrate and observe it under an optical microscope to find a suitable thin-layer CsPbBr3 sample.

[0081] (4) Coarse adjustment of cavity length of multimode microcavity light emitter

[0082] The coarse adjustment method is the same as that used for the cavity length of the multimode microcavity optical emitter in Example 1.

[0083] (5) Fine adjustment of the cavity length of the multimode microcavity light emitter

[0084] The fine-tuning method is the same as that used for the multimode microcavity optical emitter in Example 1.

[0085] (6) Disassembly and cavity mode adjustment of the multimode microcavity light emitter

[0086] The disassembly and cavity mode adjustment methods are the same as those for the multimode microcavity optical emitter in Example 1.

[0087] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention without departing from the principles and spirit of the present invention.

Claims

1. A tunable multimode microcavity light emitter based on two-dimensional layered semiconductors, characterized in that: From bottom to top, it includes a bottom DBR substrate, a two-dimensional layered semiconductor, a polymethyl methacrylate (PMMA) film, and a top DBR substrate; the thickness of the PMMA film can be precisely adjusted, and by adjusting its thickness, the length of the light emitter microcavity, the number of cavity films, and their positions can be controlled. The bottom DBR substrate includes a silicon wafer substrate and a bottom DBR, and the top DBR substrate includes a quartz substrate and a top DBR; The thickness of the polymethyl methacrylate (PMMA) film is between 100 and 2000 nm. The specific steps of the fabrication method of the tunable multimode microcavity light emitter based on two-dimensional layered semiconductor are as follows: Step 1: Prepare the bottom DBR substrate and the top DBR substrate; Step 2: Fabricate a two-dimensional layered semiconductor material on the bottom DBR substrate; Step 3: Use a spin coater to spin coat polymethyl methacrylate (PMMA) onto the bottom DBR substrate with two-dimensional layered semiconductors to form a PMMA film. Then, place the top DBR substrate with the top DBR facing down on the upper surface of the PMMA film to complete the bonding of the bottom DBR substrate and the top DBR substrate and the coarse adjustment of the cavity length, number of cavity films and position. Step 4: Place the bonded bottom DBR substrate and top DBR substrate on the stage of the micro-angle-resolved spectrometer. Adjust the stage height so that the light spot is focused on the surface of the two-dimensional layered semiconductor. Use the sample holder to fix the distance between the top DBR and the objective lens. Apply uniaxial stress to the bottom DBR substrate by using a nanoscale Z-axis displacement motor stage to adjust the microcavity length of the light emitter at the nanoscale. Combine the angle-resolved reflection spectrum in the vertical direction to control the microcavity length in real time, and finally obtain the desired two-dimensional semiconductor multimode microcavity structure, i.e., the multimode microcavity light emitter.

2. The tunable multimode microcavity light emitter based on a two-dimensional layered semiconductor according to claim 1, characterized in that: The cavity length transformation method of the two-dimensional semiconductor multimode microcavity structure: First, the two-dimensional semiconductor multimode microcavity structure was immersed in acetone solution to remove the polymethyl methacrylate (PMMA) film in the microcavity, and the top DBR substrate and the bottom DBR substrate with two-dimensional layered semiconductor were separated and disassembled. Then, repeat steps 3 and 4, and adjust the height between the two DBR substrates coarsely and finely according to the different cavity length requirements to obtain the two-dimensional semiconductor multimode microcavity structure after changing the cavity length. Based on the above operations, mode modulation of the microcavity of the multimode microcavity optical emitter and the reuse of DBR and two-dimensional semiconductor materials are realized.

3. The tunable multimode microcavity light emitter based on a two-dimensional layered semiconductor according to claim 1, characterized in that: In step 1, firstly, the center wavelength of the distributed Bragg reflector (DBR) is determined based on the position of the exciton band of the two-dimensional layered semiconductor material used in the active region. ; Then, low-refractive-index and high-refractive-index dielectric film materials with different log numbers were alternately deposited on a standard silicon wafer and a quartz substrate using high-vacuum electron beam evaporation technology, respectively, to obtain two DBR substrates with different numbers of dielectric film logs; the standard silicon wafer had more DBR logs and was the bottom DBR of the multimode microcavity, while the quartz substrate had fewer DBR logs and was the top DBR of the multimode microcavity.

4. The tunable multimode microcavity light emitter based on a two-dimensional layered semiconductor according to claim 3, characterized in that: The thickness of the low-refractive-index dielectric film is The thickness of the high refractive index dielectric film is ,in The thickness of a single-layer low-refractive-index dielectric film, The thickness of a single-layer high-refractive-index dielectric film, The location of the center wavelength of the DBR substrate. The refractive index of a low-refractive-index dielectric film, The refractive index is the refractive index of the high refractive index dielectric film.

5. The tunable multimode microcavity light emitter based on a two-dimensional layered semiconductor according to claim 4, characterized in that: The thickness of each dielectric film layer on the DBR substrate is one-quarter of the optical wavelength, i.e. Two dielectric film materials are alternately distributed. First, a low-refractive-index dielectric film material is deposited, and then a high-refractive-index dielectric film material is deposited, so that the reflectivity at the bandgap of the DBR substrate reaches more than 99%, thereby forming a high-reflectivity distributed Bragg mirror structure.

6. The tunable multimode microcavity light emitter based on a two-dimensional layered semiconductor according to claim 4, characterized in that: In step 2, the required two-dimensional layered semiconductor material is prepared directly on the bottom DBR substrate by mechanical stripping, chemical vapor deposition, or liquid phase growth.

7. The tunable multimode microcavity light emitter based on a two-dimensional layered semiconductor according to claim 4, characterized in that: The gain medium material used in the multimode microcavity light emitter is a two-dimensional layered semiconductor material, namely a transition metal chalcogenide, perovskite, or a two-dimensional van der Waals heterojunction.

Images