Substrate cleaning apparatus, substrate cleaning system, substrate processing system, substrate cleaning method and substrate processing method

Abstract

This invention relates to a substrate cleaning apparatus, a substrate cleaning system, a substrate processing system, a substrate cleaning method, and a substrate processing method. An upper holding device holds the substrate in a horizontal position without rotating it. A lower holding device holds the substrate in an adsorption manner and rotates it. The substrate held by the upper holding device is cleaned with a cleaning solution, and the substrate held by the lower holding device is also cleaned with a cleaning solution. Gas in the processing space is discharged from the factory's exhaust system via an exhaust system. When the substrate is held by the upper holding device, the gas in the processing space is either not discharged or discharged at a first flow rate. When the substrate is held by the lower holding device, the gas in the processing space is discharged at a second or third flow rate higher than the first flow rate.

Description

Technical Field

[0001] This invention relates to a substrate cleaning apparatus, a substrate cleaning system, a substrate processing system, a substrate cleaning method, and a substrate processing method. Background Technology

[0002] Substrate processing apparatuses are used to perform various processing on various substrates used in liquid crystal display devices or organic EL (Electroluminescence) display devices, such as substrates for FPD (Flat Panel Display), semiconductor substrates, optical disc substrates, magnetic disk substrates, magneto-optical disc substrates, photomask substrates, ceramic substrates, or solar cell substrates. Substrate cleaning apparatuses are used to clean the substrates.

[0003] For example, the substrate cleaning apparatus described in Japanese Patent No. 5904169 includes: two adsorption pads for holding the peripheral portion of the back side of a wafer; a rotating chuck for holding the central portion of the back side of the wafer; and a brush for cleaning the back side of the wafer. The two adsorption pads hold the wafer and move laterally. In this state, the brush cleans the central portion of the back side of the wafer. Afterward, the rotating chuck receives the wafer from the adsorption pads, holding the central portion of the back side of the wafer and rotating it. In this state, the brush cleans the peripheral portion of the back side of the wafer. Summary of the Invention

[0004] In the substrate cleaning apparatus described in Patent No. 5904169, the adsorption pad, rotating chuck, and brush are mounted in a box-shaped bottom cup. At the bottom of the bottom cup, one end of an exhaust pipe is provided for discharging the atmosphere inside the substrate cleaning apparatus to the outside. The other end of the exhaust pipe is connected to, for example, an exhaust system in a factory. By properly discharging the atmosphere inside the substrate cleaning apparatus to the outside, the spraying and dispersion of cleaning liquid particles within the substrate cleaning apparatus can be suppressed. Therefore, a high level of cleanliness can be maintained within the substrate cleaning apparatus.

[0005] In a factory, by installing multiple substrate cleaning units, more substrates can be cleaned in a shorter time. However, if an excessive number of exhaust pipes are connected to the factory's exhaust system due to the increased number of substrate cleaning units, there is a possibility that the required exhaust volume cannot be obtained in each substrate cleaning unit. In such a case, it is impossible to maintain a high level of cleanliness within each substrate cleaning unit. Therefore, the number of substrate cleaning units that can be installed in a factory is limited, for example, by the exhaust capacity of the factory's exhaust system.

[0006] The purpose of this invention is to provide a substrate cleaning device, substrate cleaning system, substrate processing system, substrate cleaning method, and substrate processing method that can maintain a high level of cleanliness in the internal space of multiple substrate cleaning devices or multiple substrate processing devices by using an exhaust device with a preset exhaust capacity.

[0007] (1) A substrate cleaning apparatus according to one aspect of the present invention cleans a substrate and comprises: a processing chamber having a processing space capable of receiving a substrate; a first substrate holding part holding the substrate in a horizontal position and preventing it from rotating by abutting against multiple parts of the substrate; a second substrate holding part holding the substrate in a horizontal position and rotating it about an axis in the vertical direction by adsorbing onto the substrate; a cleaning part cleaning the substrate held by the first substrate holding part in the processing space with a cleaning liquid, and cleaning the substrate held by the second substrate holding part with a cleaning liquid before and after cleaning the substrate held by the first substrate holding part; an exhaust system connecting the processing space to an exhaust device provided outside the processing chamber, and exhausting the gas in the processing space by the exhaust device; and an exhaust flow rate adjustment part adjusting the flow rate of the gas flowing through the exhaust system in such a way that, when the substrate is held by the first substrate holding part, the gas in the processing space is not discharged or the gas in the processing space is discharged at a first flow rate, and when the substrate is held by the second substrate holding part, the gas in the processing space is discharged at a second flow rate higher than the first flow rate.

[0008] In the substrate cleaning apparatus, the substrate is held horizontally and prevented from rotating by the first substrate holding section. The substrate is then cleaned in this state. Because the substrate is not rotating during cleaning, the cleaning liquid is less likely to scatter from the substrate. Therefore, a high level of cleanliness is maintained within the processing space even without discharging gas from the processing space. Alternatively, a high level of cleanliness is maintained within the processing space even when gas from the processing space is discharged at a lower first flow rate.

[0009] Furthermore, in the substrate cleaning apparatus, the substrate is held horizontally by the second substrate holding unit and rotated about an axis in the vertical direction. The substrate is cleaned in this state. When cleaning the substrate held by the second substrate holding unit, because the substrate rotates, the cleaning liquid easily scatters from the substrate. Therefore, in the substrate cleaning apparatus, the gas in the processing space is discharged at a higher second flow rate. In this case, the cleaning liquid scattering from the substrate is effectively discharged from the processing space. This suppresses a decrease in cleanliness within the processing space.

[0010] According to the aforementioned configuration, the exhaust capacity of the exhaust device required in a substrate cleaning apparatus is adjusted over time. Therefore, when multiple substrate cleaning apparatuses are used with a single exhaust device, the multiple substrate cleaning apparatuses can be controlled to clean the substrates held by the second substrate holding section at different times. In this case, the level of exhaust capacity required for multiple substrate cleaning apparatuses simultaneously is reduced. As a result, a high level of cleanliness can be maintained in the processing space of more substrate cleaning apparatuses using an exhaust device with a preset exhaust capacity.

[0011] (2) Alternatively, after the substrate held by the second substrate holding part is cleaned, the substrate is rotated in such a way that the cleaning liquid used for cleaning is thrown off the substrate.

[0012] According to the aforementioned configuration, even when the cleaning solution is being spun off from the substrate, the gas in the processing space is discharged at a relatively high second flow rate. In this case, the cleaning solution that has splashed off from the substrate is effectively discharged from the processing space. As a result, a decrease in cleanliness within the processing space can be suppressed.

[0013] (3) Alternatively, the second flow rate may include the third flow rate and a fourth flow rate higher than the third flow rate. When the second substrate holding part cleans the substrate held by the second substrate holding part, the substrate is rotated at the first rotation speed. When the cleaning liquid of the substrate is spun off, the substrate is rotated at the second rotation speed higher than the first rotation speed. The exhaust volume adjustment part adjusts the flow rate of the gas flowing through the exhaust system in such a way that when the substrate held by the second substrate holding part is cleaned, the gas in the processing space is discharged at the third flow rate, and when the cleaning liquid of the substrate is spun off by the second substrate holding part, the gas in the processing space is discharged at the fourth flow rate.

[0014] When the rotational speed of the substrate coated with cleaning solution increases, the spray of cleaning solution scattering from the substrate easily diffuses within the processing space. According to the aforementioned configuration, the second rotational speed of the substrate when the cleaning solution is being removed is higher than the first rotational speed of the substrate during cleaning. Therefore, when the cleaning solution is being removed from the substrate, the spray of cleaning solution easily diffuses within the processing space. Even in this case, when the cleaning solution is being removed from the substrate, the gas in the processing space is discharged at a fourth flow rate, which is higher than the first and third flow rates during substrate cleaning. Therefore, a high level of cleanliness is maintained in the processing space when the cleaning solution is being removed from the substrate.

[0015] Furthermore, according to the aforementioned configuration, based on the substrate rotation speed, the amount of cleaning liquid sprayed into the processing space during substrate cleaning is less than the amount of cleaning liquid sprayed into the processing space during substrate spin-drying. Therefore, even when the third flow rate of the gas discharged during substrate cleaning is lower than the fourth flow rate of the gas discharged during substrate spin-drying, sufficient gas discharge is performed during substrate cleaning to maintain the cleanliness of the processing space. Thus, excessive exhaust capacity is prevented when the substrate is held by the second substrate holding section.

[0016] (4) Alternatively, the substrate cleaning apparatus may also include a processing cup arranged in a manner that surrounds the second substrate holding portion when viewed from above, and an exhaust system arranged in a manner that exhausts the gas in the processing space from the bottom of the processing cup.

[0017] In this case, the cleaning liquid that sprays from the substrate held by the second substrate holding part can be caught by the processing cup. In addition, the spray of cleaning liquid sprayed in the processing cup is smoothly discharged from the bottom of the processing cup to the outside of the processing chamber.

[0018] (5) Alternatively, the substrate cleaning apparatus may also include a cup driving unit that supports the processing cup and moves the processing cup in the vertical direction between a first height position where the processing cup overlaps with the substrate held by the second substrate holding unit in a side view and a second height position where the processing cup is below the substrate held by the second substrate holding unit in a side view. When the substrate is held by the second substrate holding unit, the cup driving unit supports the processing cup at the first height position in a manner that catches the cleaning liquid that splashes from the substrate. When the substrate is held by the first substrate holding unit, the cup driving unit supports the processing cup at the second height position.

[0019] In this case, with the substrate held by the second substrate holding part, the diffusion of cleaning liquid splashed from the substrate into the processing space is reduced. Therefore, the decrease in cleanliness within the processing space is suppressed.

[0020] (6) A substrate cleaning system according to another aspect of the present invention has a plurality of said substrate cleaning devices and a cleaning control unit, wherein the exhaust device is used by the plurality of substrate cleaning devices, and the cleaning control unit controls the operation of the plurality of substrate cleaning devices in such a manner that the substrate is not held by the second substrate holding unit at the same time in the plurality of substrate cleaning devices.

[0021] In this case, the level of exhaust capacity required for exhaust equipment in multiple substrate cleaning units simultaneously can be reduced. Therefore, it is possible to maintain a high level of cleanliness in the processing space of more substrate cleaning units by using exhaust equipment with a preset exhaust capacity.

[0022] (7) A substrate cleaning system according to another aspect of the present invention has a plurality of said substrate cleaning devices and a cleaning control unit, wherein an exhaust device is used in common by the plurality of substrate cleaning devices, and the cleaning control unit controls the operation of the plurality of substrate cleaning devices in such a way that the cleaning liquid of the substrate is not simultaneously spun off in the plurality of substrate cleaning devices.

[0023] In this case, the level of exhaust capacity required for exhaust equipment in multiple substrate cleaning units simultaneously can be reduced. Therefore, it is possible to maintain a high level of cleanliness in the processing space of more substrate cleaning units by using exhaust equipment with a preset exhaust capacity.

[0024] (8) A substrate processing system according to another aspect of the present invention performs specific processing on a substrate and includes: a plurality of substrate processing apparatuses; and a processing control unit that controls the plurality of substrate processing apparatuses; and each of the plurality of substrate processing apparatuses includes: a processing chamber having a processing space capable of receiving a substrate; a processing unit that performs a first processing on the substrate in the processing space, and performs a second processing on the substrate before or after the first processing; an exhaust system that connects the processing space to an exhaust device provided outside the processing chamber, and exhausts gas from the processing space by the exhaust device; and an exhaust flow rate adjustment unit that adjusts the flow rate of the gas flowing through the exhaust system in such a way that, during the first processing, the gas from the processing space is not discharged or the gas from the processing space is discharged at a first flow rate, and during the second processing, the gas from the processing space is discharged at a second flow rate higher than the first flow rate; and the processing control unit controls the operation of the plurality of substrate processing apparatuses in such a way that the second processing is performed on the plurality of substrates separately but not simultaneously in the plurality of substrate processing apparatuses.

[0025] In each of the plurality of substrate processing devices, during the first processing of the substrate, the gas in the processing space is not discharged or is discharged at a lower first flow rate. On the other hand, during the second processing of the substrate, the gas in the processing space is discharged at a higher second flow rate.

[0026] In multiple substrate processing units, multiple substrates are not simultaneously subjected to a second processing. In this case, the level of exhaust capacity required for exhaust equipment in multiple substrate processing units is reduced. Therefore, it is possible to maintain a high level of cleanliness in the processing spaces of more substrate processing units using exhaust equipment with preset exhaust capacity.

[0027] (9) A substrate cleaning method according to another aspect of the present invention cleans a substrate and includes the following steps: in a processing space formed by a processing chamber, holding the substrate in a horizontal position and preventing it from rotating using a first substrate holding part that abuts against a plurality of portions of the substrate; cleaning the substrate held by the first substrate holding part using a cleaning solution; in the processing space, holding the substrate in a horizontal position and rotating it about an axis in the vertical direction using a second substrate holding part that adsorbs the substrate; cleaning the substrate held by the second substrate holding part using a cleaning solution; when the substrate is held by the first substrate holding part, adjusting the flow rate of the gas flowing through the exhaust system in such a way that the gas in the processing space is not discharged or that the gas in the processing space is discharged to the outside of the processing chamber by an exhaust device provided outside the processing chamber through an exhaust system at a first flow rate; and when the substrate is held by the second substrate holding part, adjusting the flow rate of the gas flowing through the exhaust system in such a way that the gas in the processing space is discharged to the outside of the processing chamber by an exhaust device through an exhaust system at a second flow rate higher than the first flow rate.

[0028] In the substrate cleaning method, the substrate is held horizontally and prevented from rotating by the first substrate holding part. The substrate is then cleaned in this state. Because the substrate is not rotating during cleaning, the cleaning solution is less likely to scatter from the substrate. Therefore, a high level of cleanliness is maintained within the processing space even without discharging gas from the processing space. Alternatively, a high level of cleanliness is maintained within the processing space even when gas from the processing space is discharged at a lower first flow rate.

[0029] Furthermore, in the substrate cleaning method, the substrate is held horizontally by the second substrate holding part and rotated about an axis in the vertical direction. The substrate is cleaned in this state. When cleaning the substrate held by the second substrate holding part, because the substrate rotates, the cleaning liquid easily scatters from the substrate. Therefore, in this substrate cleaning method, the gas in the processing space is discharged at a higher second flow rate. In this case, the cleaning liquid scattering from the substrate is effectively discharged from the processing space. This suppresses a decrease in cleanliness within the processing space.

[0030] The processing chamber, the first substrate holding section, the second substrate holding section, and the exhaust system constitute, for example, a substrate cleaning apparatus. According to the method, the exhaust capacity of the exhaust equipment required in a substrate cleaning apparatus is adjusted over time. Therefore, when multiple substrate cleaning apparatuses are used with a single exhaust device, the multiple substrate cleaning apparatuses can be controlled to clean the substrates held by the second substrate holding section at different times. In this case, the level of exhaust capacity required for multiple substrate cleaning apparatuses simultaneously is reduced. Thus, a high level of cleanliness can be maintained in the processing space of more substrate cleaning apparatuses using an exhaust device with a preset exhaust capacity.

[0031] (10) Alternatively, the substrate cleaning method may further include the following steps: after cleaning the substrate held by the second substrate holding part, the substrate is rotated in such a way that the cleaning liquid used for cleaning is thrown off the substrate.

[0032] According to the aforementioned configuration, even when the cleaning solution is being spun off from the substrate, the gas in the processing space can be discharged at a relatively high second flow rate. In this case, the cleaning solution that has splashed off from the substrate is effectively discharged from the processing space. This, in turn, suppresses a decrease in cleanliness within the processing space.

[0033] (11) Alternatively, the second flow rate may include a third flow rate and a fourth flow rate higher than the third flow rate. The step of cleaning the substrate held by the second substrate holding part with the cleaning solution includes: rotating the substrate held by the second substrate holding part at a first rotation speed during cleaning; rotating the substrate in such a way as to remove the cleaning solution from the substrate includes: rotating the substrate held by the second substrate holding part at a second rotation speed higher than the first rotation speed when removing the cleaning solution from the substrate; and adjusting the flow rate of the gas flowing through the exhaust system while the substrate is held by the second substrate holding part includes: adjusting the flow rate of the gas flowing through the exhaust system in such a way as to discharge the gas in the processing space according to the third flow rate when cleaning the substrate held by the second substrate holding part; and adjusting the flow rate of the gas flowing through the exhaust system in such a way as to discharge the gas in the processing space according to the fourth flow rate when removing the cleaning solution from the substrate held by the second substrate holding part.

[0034] When the rotational speed of the substrate coated with cleaning solution increases, the spray of cleaning solution scattering from the substrate easily diffuses within the processing space. According to the aforementioned configuration, the second rotational speed of the substrate when the cleaning solution is being removed is higher than the first rotational speed of the substrate during cleaning. Therefore, when the cleaning solution is being removed from the substrate, the spray of cleaning solution easily diffuses within the processing space. Even in this case, when the cleaning solution is being removed from the substrate, the gas in the processing space is discharged at a fourth flow rate, higher than the first and third flow rates during substrate cleaning. Therefore, a high level of cleanliness is maintained in the processing space when the cleaning solution is being removed from the substrate.

[0035] Furthermore, according to the aforementioned configuration, based on the substrate rotation speed, the amount of cleaning liquid sprayed into the processing space during substrate cleaning is less than the amount of cleaning liquid sprayed into the processing space during substrate spin-drying. Therefore, even when the third flow rate of the gas discharged during substrate cleaning is lower than the fourth flow rate of the gas discharged during substrate spin-drying, sufficient gas discharge is performed during substrate cleaning to maintain the cleanliness of the processing space. Thus, excessive exhaust capacity is prevented when the substrate is held by the second substrate holding section.

[0036] (12) Alternatively, the processing cup may be arranged in a manner that surrounds the second substrate holding portion from a top view. The steps of adjusting the flow rate of the gas flowing through the exhaust system when the substrate is held by the first substrate holding portion and adjusting the flow rate of the gas flowing through the exhaust system when the substrate is held by the second substrate holding portion include: discharging the gas in the processing space from the bottom of the processing cup.

[0037] In this case, the cleaning liquid that sprays from the substrate held by the second substrate holding part can be caught by the processing cup. In addition, the spray of cleaning liquid sprayed in the processing cup is smoothly discharged from the bottom of the processing cup to the outside of the processing chamber.

[0038] (13) Alternatively, the substrate cleaning method may further include the following steps: supporting the processing cup and moving the processing cup in a vertical direction between a first height position where the processing cup overlaps with the substrate held by the second substrate holding part in a side view and a second height position where the processing cup is below the substrate held by the second substrate holding part in a side view. The step of supporting the processing cup and moving it in a vertical direction includes: when the substrate is held by the second substrate holding part, supporting the processing cup at the first height position in a manner that catches the cleaning liquid splashed from the substrate, and when the substrate is held by the first substrate holding part, supporting the processing cup at the second height position.

[0039] In this case, with the substrate held by the second substrate holding part, the diffusion of cleaning liquid splashed from the substrate into the processing space is suppressed. Therefore, the decrease in cleanliness within the processing space is suppressed.

[0040] (14) A substrate cleaning method according to another aspect of the present invention cleans a plurality of substrates and includes the step of controlling a plurality of substrate cleaning apparatuses, each of the plurality of substrate cleaning apparatuses comprising: a processing chamber having a processing space capable of receiving a substrate; a first substrate holding portion holding the substrate in a horizontal position and preventing it from rotating by abutting against a plurality of portions of the substrate; a second substrate holding portion holding the substrate in a horizontal position and rotating it about an axis in the vertical direction by adsorbing onto the substrate; a cleaning portion cleaning the substrate held by the first substrate holding portion with a cleaning solution within the processing space, and cleaning the substrate held by the second substrate holding portion with a cleaning solution before and after cleaning the substrate held by the first substrate holding portion; and an exhaust system. The system connects the processing space to an exhaust device located outside the processing chamber, which discharges gas from the processing space; and an exhaust volume adjustment unit adjusts the flow rate of gas flowing through the exhaust system in such a way that, when the substrate is held by the first substrate holding unit, the gas in the processing space is not discharged or the gas in the processing space is discharged at a first flow rate, and when the substrate is held by the second substrate holding unit, the gas in the processing space is discharged at a second flow rate higher than the first flow rate; and the exhaust device is shared by multiple substrate cleaning devices; the step of controlling the multiple substrate cleaning devices includes controlling the operation of the multiple substrate cleaning devices in such a way that the substrate is not held by the second substrate holding unit at the same time in the multiple substrate cleaning devices.

[0041] According to the substrate cleaning method, the level of exhaust capacity required for multiple substrate cleaning units simultaneously can be reduced. Therefore, it is possible to maintain a high level of cleanliness in the processing space of more substrate cleaning units by using exhaust equipment with preset exhaust capacity.

[0042] (15) A substrate cleaning method according to another aspect of the present invention cleans a plurality of substrates and includes the step of controlling a plurality of substrate cleaning apparatuses, each of the plurality of substrate cleaning apparatuses comprising: a processing chamber having a processing space capable of receiving a substrate; a first substrate holding part holding the substrate in a horizontal position and preventing it from rotating by contacting a plurality of portions of the substrate; a second substrate holding part holding the substrate in a horizontal position and rotating it about an axis in the vertical direction by adsorbing onto the substrate; a cleaning part cleaning the substrate held by the first substrate holding part in the processing space using a cleaning solution, and cleaning the substrate held by the second substrate holding part using a cleaning solution before and after cleaning the substrate held by the first substrate holding part; an exhaust system connecting the processing space to an exhaust device provided outside the processing chamber, and exhausting gas from the processing space by the exhaust device; and an exhaust flow adjustment part adjusting the flow rate of the gas flowing through the exhaust system in such a way that, when the first substrate holding part is in contact with a plurality of portions of the substrate, the first substrate holding part holds the substrate in a horizontal position and prevents it from rotating about an axis in the vertical direction; an exhaust system cleaning the substrate held by the first substrate holding part in the processing space using a cleaning solution, and cleaning the substrate held by the second substrate holding part before and after cleaning the substrate held by the first substrate holding part; an exhaust system connecting the processing space to an exhaust device provided outside the processing chamber, and exhausting gas from the processing space using the exhaust device; and an exhaust flow rate adjustment part adjusting the flow rate of the gas flowing through the exhaust system in such a way that, when the first substrate holding part is in contact with a plurality of portions of the substrate, the first substrate holding part holds the substrate in a horizontal position and rotating it about an axis in the vertical direction; an exhaust system cleaning the substrate held by the first substrate holding part in the processing space using a cleaning solution, and cleaning the substrate held by the second substrate holding part in the processing space using a cleaning solution; an exhaust system cleaning the substrate held by the first substrate holding part in the processing space using a cleaning solution; an exhaust system cleaning the substrate held by the first substrate holding part in the processing space using a cleaning solution; an exhaust flow rate adjustment part adjusting the flow rate of the gas flowing When the substrate is held by the bottom holding part, the gas in the processing space is not discharged or is discharged at a first flow rate. When the substrate is held by the second substrate holding part, the gas in the processing space is discharged at a second flow rate higher than the first flow rate. After the substrate held by the second substrate holding part is cleaned, the substrate is rotated in such a way that the cleaning liquid used for cleaning is thrown off the substrate. The exhaust volume adjustment part further adjusts the flow rate of the gas flowing through the exhaust system in such a way that the gas in the processing space is discharged at a third flow rate when the substrate held by the second substrate holding part is cleaned, and in such a way that the gas in the processing space is discharged at a fourth flow rate when the cleaning liquid of the substrate is thrown off by the second substrate holding part. The exhaust device is used by multiple substrate cleaning devices. The step of controlling multiple substrate cleaning devices includes controlling the operation of multiple substrate cleaning devices in such a way that the cleaning liquid of the substrate is thrown off at different times in multiple substrate cleaning devices.

[0043] According to the substrate cleaning method, the level of exhaust capacity required for multiple substrate cleaning units simultaneously can be reduced. Therefore, it is possible to maintain a high level of cleanliness in the processing space of more substrate cleaning units by using exhaust equipment with preset exhaust capacity.

[0044] (16) A substrate cleaning method according to another aspect of the present invention performs specific processing on a plurality of substrates, and includes the step of controlling a plurality of substrate processing apparatuses, each of the plurality of substrate processing apparatuses comprising: a processing chamber having a processing space capable of receiving a substrate; a processing unit performing a first processing on the substrate in the processing space, and performing a second processing on the substrate before or after the first processing; an exhaust system connecting the processing space to an exhaust device disposed outside the processing chamber, and discharging gas from the processing space by the exhaust device; and an exhaust flow adjustment unit adjusting the flow rate of gas flowing through the exhaust system in such a way that, during the first processing, gas from the processing space is not discharged or gas from the processing space is discharged at a first flow rate, and during the second processing, gas from the processing space is discharged at a second flow rate higher than the first flow rate; and the step of controlling the plurality of substrate processing apparatuses comprises controlling the operation of the plurality of substrate processing apparatuses in such a way that the plurality of substrates are not simultaneously subjected to the second processing in the plurality of substrate processing apparatuses.

[0045] In each of the plurality of substrate processing devices, during the first processing of the substrate, the gas in the processing space is not discharged or is discharged at a lower first flow rate. On the other hand, during the second processing of the substrate, the gas in the processing space is discharged at a higher second flow rate.

[0046] In multiple substrate processing units, multiple substrates are not simultaneously subjected to a second processing. In this case, the level of exhaust capacity required for exhaust equipment in multiple substrate processing units is reduced. Therefore, it is possible to maintain a high level of cleanliness in the processing spaces of more substrate processing units using exhaust equipment with preset exhaust capacity. Attached Figure Description

[0047] Figure 1 This is a schematic top view of a substrate cleaning apparatus according to one embodiment of the present invention.

[0048] Figure 2 It means Figure 1 A three-dimensional view of the internal structure of the substrate cleaning device.

[0049] Figure 3 This is a schematic side view of the substrate cleaning device used to illustrate the details of the exhaust volume adjustment section.

[0050] Figure 4 This is a schematic side view of the substrate cleaning device used to illustrate the details of the exhaust volume adjustment section.

[0051] Figure 5 This is a schematic side view of the substrate cleaning device used to illustrate the details of the exhaust volume adjustment section.

[0052] Figure 6 It means Figure 1A block diagram illustrating the configuration of the control system for the substrate cleaning apparatus.

[0053] Figure 7 It is used to explain Figure 1 A schematic diagram of the general operation of the substrate cleaning device.

[0054] Figure 8 It is used to explain Figure 1 A schematic diagram of the general operation of the substrate cleaning device.

[0055] Figure 9 It is used to explain Figure 1 A schematic diagram of the general operation of the substrate cleaning device.

[0056] Figure 10 It is used to explain Figure 1 A schematic diagram of the general operation of the substrate cleaning device.

[0057] Figure 11 It is used to explain Figure 1 A schematic diagram of the general operation of the substrate cleaning device.

[0058] Figure 12 It is used to explain Figure 1 A schematic diagram of the general operation of the substrate cleaning device.

[0059] Figure 13 It is used to explain Figure 1 A schematic diagram of the general operation of the substrate cleaning device.

[0060] Figure 14 It is used to explain Figure 1 A schematic diagram of the general operation of the substrate cleaning device.

[0061] Figure 15 It is used to explain Figure 1 A schematic diagram of the general operation of the substrate cleaning device.

[0062] Figure 16 It is used to explain Figure 1 A schematic diagram of the general operation of the substrate cleaning device.

[0063] Figure 17 It is used to explain Figure 1 A schematic diagram of the general operation of the substrate cleaning device.

[0064] Figure 18 It is used to explain Figure 1 A schematic diagram of the general operation of the substrate cleaning device.

[0065] Figure 19 This is a diagram illustrating an example of an adjustment table.

[0066] Figure 20This is a schematic top view illustrating an example of a substrate cleaning system equipped with multiple substrate cleaning devices.

[0067] Figure 21 yes Figure 20 A schematic side view of the substrate cleaning system.

[0068] Figure 22 It is used to explain Figure 21 A control example of the first to fourth substrate cleaning apparatuses of the substrate cleaning system is shown in the figure.

[0069] Figure 23 It is used to explain Figure 21 The figure shows another control example of the first to fourth substrate cleaning devices of the substrate cleaning system. Detailed Implementation

[0070] Hereinafter, the substrate cleaning apparatus, substrate cleaning system, substrate processing system, substrate cleaning method, and substrate processing method according to embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, "substrate" refers to a semiconductor substrate, a substrate for an FPD (Flat Panel Display) such as a liquid crystal display device or an organic EL (Electro Luminescence) display device, a substrate for an optical disc, a substrate for a magnetic disk, a substrate for a magneto-optical disc, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell, etc. Furthermore, at least a portion of the substrate used in this embodiment has a circular outer periphery. For example, the outer periphery is circular except for the positioning notch.

[0071] 1. Composition of the substrate cleaning device

[0072] Figure 1 This is a schematic top view of a substrate cleaning apparatus according to one embodiment of the present invention. Figure 2 It means Figure 1 A perspective view of the internal structure of the substrate cleaning apparatus 1. In the substrate cleaning apparatus 1 of this embodiment, the X, Y, and Z directions, which are orthogonal to each other, are defined to clarify their positional relationships. Figure 1 and Figure 2 In subsequent accompanying drawings, arrows will be used to indicate the X, Y, and Z directions as appropriate. The X and Y directions are orthogonal to each other in the horizontal plane, and the Z direction is equivalent to the vertical direction.

[0073] like Figure 1 As shown, the substrate cleaning apparatus 1 includes upper holding devices 10A and 10B, a lower holding device 20, a platform device 30, a transfer device 40, a lower surface cleaning device 50, a cup device 60, an upper surface cleaning device 70, an end cleaning device 80, and an opening and closing device 90. These components are housed within the unit frame 2. Figure 2 In the middle, the unit frame 2 is represented by a dashed line.

[0074] The unit frame 2 has a rectangular bottom portion 2a and four side wall portions 2b, 2c, 2d, and 2e extending upwards from the four sides of the bottom portion 2a. Furthermore, the unit frame 2 has a top portion 2f connecting the four side wall portions 2b, 2c, 2d, and 2e. Figure 2 Sidewalls 2b and 2c face each other, and sidewalls 2d and 2e face each other. The space enclosed by the four sidewalls 2b, 2c, 2d, and 2e functions as a processing space 2S for performing specific processing on the substrate W (cleaning processing in this example).

[0075] A rectangular opening is formed in the center of the sidewall portion 2b. This opening serves as the loading / unloading outlet 2x for the substrate W and is used when loading and unloading the substrate W into and out of the unit frame 2. Figure 2 In the diagram, the loading / unloading outlet 2x is represented by a thicker dashed line. In the following description, the direction in the Y direction from the inside of the unit frame 2 through the loading / unloading outlet 2x toward the outside of the unit frame 2 (from side wall 2c toward side wall 2b) is called the front, and its opposite direction (from side wall 2b toward side wall 2c) is called the rear.

[0076] An opening and closing device 90 is provided in the area where the inlet / outlet 2x is formed on the side wall portion 2b and in the vicinity thereon. The opening and closing device 90 includes a gate 91 configured to open and close the inlet / outlet 2x, and a gate drive unit 92 that drives the gate 91. Figure 2 In the diagram, gate 91 is indicated by a thicker double-dotted line. Gate drive unit 92 drives gate 91 in a manner that opens the loading / unloading outlet 2x when substrate W is loaded into and unloaded from substrate cleaning device 1. Alternatively, gate drive unit 92 drives gate 91 in a manner that closes the loading / unloading outlet 2x when substrate W is being cleaned in substrate cleaning device 1.

[0077] A pedestal assembly 30 is disposed at the center of the bottom portion 2a. The pedestal assembly 30 includes a linear guide rail 31, a movable pedestal 32, and a pedestal drive unit 33. The linear guide rail 31 includes two tracks, arranged such that, when viewed from above, it extends from near the side wall portion 2b along the Y direction to near the side wall portion 2c. The movable pedestal 32 is configured to move along the Y direction on the two tracks of the linear guide rail 31. The pedestal drive unit 33 includes, for example, a pulse motor, which moves the movable pedestal 32 along the Y direction on the linear guide rail 31.

[0078] On the movable stage 32, a lower holding device 20 and a lower surface cleaning device 50 are arranged in the Y direction. The lower holding device 20 includes an adsorption holding part 21 and an adsorption holding drive part 22. The adsorption holding part 21 is a so-called rotary chuck, having a circular adsorption surface capable of adsorbing and holding the lower surface of the substrate W, and is configured to rotate about an axis extending in the vertical direction (the axis in the Z direction). In the following description, when the substrate W is adsorbed and held by the adsorption holding part 21, the area on the lower surface of the substrate W that should be adsorbed by the adsorption surface of the adsorption holding part 21 is called the central region of the lower surface. On the other hand, the area on the lower surface of the substrate W that surrounds the central region of the lower surface is called the outer region of the lower surface.

[0079] The adsorption and holding drive unit 22 includes a motor. The motor of the adsorption and holding drive unit 22 is mounted on a movable platform 32, protruding upwards along its rotational axis. The adsorption and holding unit 21 is mounted on the upper end of the rotational axis of the adsorption and holding drive unit 22. Furthermore, an attraction path for adsorbing and holding the substrate W in the adsorption and holding unit 21 is formed along the rotational axis of the adsorption and holding drive unit 22. This attraction path is connected to a suction device (not shown). The adsorption and holding drive unit 22 rotates the adsorption and holding unit 21 about the rotational axis.

[0080] On the movable base 32, near the lower holding device 20, a connecting device 40 is also provided. The connecting device 40 includes multiple (three in this example) support pins 41, pin connecting members 42, and a pin lifting drive 43. The pin connecting members 42 are formed to surround the adsorption holding part 21 from a top view, connecting the multiple support pins 41. The multiple support pins 41 extend upward from the pin connecting members 42 by a certain length while being interconnected by them. The pin lifting drive 43 causes the pin connecting members 42 to rise and fall on the movable base 32. As a result, the multiple support pins 41 rise and fall relative to the adsorption holding part 21.

[0081] The lower surface cleaning device 50 includes a lower surface brush 51, two liquid nozzles 52, a gas ejection section 53, a lifting support section 54, a movable support section 55, a lower surface brush rotation drive section 55a, a lower surface brush lifting drive section 55b, and a lower surface brush moving drive section 55c. The movable support section 55 is configured to move relative to the lower holding device 20 in the Y direction within a certain area on the movable platform 32. Figure 2 As shown, a lifting support 54 is provided on the movable support 55 in a way that allows it to be raised and lowered. The lifting support 54 has an upper surface 54u that is inclined downward in a direction away from the adsorption and holding part 21 (rearward in this example).

[0082] like Figure 1As shown, the lower surface brush 51 has a circular shape when viewed from above, and is formed to a relatively large size in this embodiment. Specifically, the diameter of the lower surface brush 51 is larger than the diameter of the adsorption surface of the adsorption holding portion 21, for example, it is 1.3 times the diameter of the adsorption surface of the adsorption holding portion 21. In addition, the diameter of the lower surface brush 51 is greater than 1 / 3 and less than 1 / 2 of the diameter of the substrate W. Furthermore, the diameter of the substrate W is, for example, 300 mm.

[0083] The lower surface brush 51 has a cleaning surface that can contact the lower surface of the substrate W. In addition, the lower surface brush 51 is mounted on the upper surface 54u of the lifting support 54 with the cleaning surface facing upward and the cleaning surface being rotatable about an axis extending in the vertical direction through the center of the cleaning surface.

[0084] Each of the two liquid nozzles 52 is mounted on the upper surface 54u of the lifting support 54, positioned near the lower surface brush 51 with the liquid outlet facing upwards. The lower surface cleaning fluid supply unit 56 is connected to each liquid nozzle 52. Figure 6 The lower surface cleaning solution supply unit 56 supplies cleaning solution to the liquid nozzle 52. When the substrate W is cleaned by the lower surface brush 51, the liquid nozzle 52 sprays the cleaning solution supplied from the lower surface cleaning solution supply unit 56 onto the lower surface of the substrate W. In this embodiment, pure water is used as the cleaning solution supplied to the liquid nozzle 52.

[0085] The gas ejection section 53 is a slit-shaped gas injection nozzle with a gas outlet extending in one direction. The gas ejection section 53 is mounted on the upper surface 54u of the lifting support section 54, positioned between the lower surface brush 51 and the adsorption holding section 21 with the gas outlet facing upwards when viewed from above. The gas ejection section 53 is connected to the ejected gas supply section 57. Figure 6 The ejected gas supply unit 57 supplies gas to the gas ejection unit 53. In this embodiment, an inert gas such as nitrogen is used as the gas supplied to the gas ejection unit 53. The gas ejection unit 53 ejects the gas supplied from the ejected gas supply unit 57 onto the lower surface of the substrate W when the substrate W is cleaned by the lower surface brush 51 and during the drying of the lower surface of the substrate W, which will be described later. In this case, a strip-shaped air curtain extending in the X direction is formed between the lower surface brush 51 and the adsorption holding unit 21.

[0086] The lower surface brush rotation drive unit 55a includes a motor that rotates the lower surface brush 51 when the substrate W is cleaned by the lower surface brush 51. The lower surface brush lifting drive unit 55b includes a stepper motor or cylinder that raises and lowers the lifting support unit 54 relative to the movable support unit 55. The lower surface brush moving drive unit 55c includes a motor that moves the movable support unit 55 along the Y direction on the movable platform 32. Here, the position of the lower holding device 20 in the movable platform 32 is fixed. Therefore, when the movable support unit 55 is moved in the Y direction by the lower surface brush moving drive unit 55c, the movable support unit 55 moves relative to the lower holding device 20. In the following description, the position of the lower surface cleaning device 50 on the movable platform 32 that is closest to the lower holding device 20 is called the approach position, and the position of the lower surface cleaning device 50 on the movable platform 32 that is farthest from the lower holding device 20 is called the separated position.

[0087] A cup device 60 is also provided in the center of the bottom part 2a. The cup device 60 includes a handling cup 61 and a cup drive unit 62. The handling cup 61 is configured to surround the lower holding device 20 and the base device 30 when viewed from above, and can be raised and lowered. Figure 2 In the diagram, the processing cup 61 is indicated by a dashed line. The cup driving unit 62 moves the processing cup 61 between a lower cup position and an upper cup position according to which part of the lower surface of the substrate W needs to be cleaned by the lower surface brush 51. The lower cup position is when the upper end of the cup 61 is at a height lower than the substrate W held by the adsorption and holding unit 21. That is, when the cup 61 is in the lower cup position, it is below the substrate W held by the adsorption and holding unit 21 when viewed from above. On the other hand, the upper cup position is when the upper end of the cup 61 is at a height higher than the adsorption and holding unit 21. That is, when the cup 61 is in the upper cup position, it overlaps with the substrate W held by the adsorption and holding unit 21 when viewed from above.

[0088] At the bottom of cup 61, one end of an exhaust system 94 extending to the outside of substrate cleaning apparatus 1 is connected. The other end of the exhaust system 94 is connected to an exhaust device 99 located outside the substrate cleaning apparatus 1.

[0089] The exhaust system 94 is mainly composed of piping. In addition to piping, the exhaust system 94 may also include fluid-related machinery such as connectors or valves. Inside the substrate cleaning apparatus 1, a portion of the exhaust system 94 contains an exhaust volume adjustment unit 95. Details of the exhaust volume adjustment unit 95 will be described later. The exhaust device 99 includes, for example, an exhaust fan, which draws air from the exhaust system 94 and exhausts it to the outside of the exhaust system 94. The exhaust device 99 has a preset exhaust capacity (the amount of gas that can be exhausted per unit time). When the exhaust device 99 is activated, the air pressure inside the exhaust system 94 is lower than that in the processing space 2S. Therefore, the atmosphere in the processing space 2S of the substrate cleaning apparatus 1 is drawn by the exhaust system 94 and exhausted to the outside of the substrate cleaning apparatus 1.

[0090] Figures 3-5 This is a schematic side view of the substrate cleaning device 1 used to illustrate the details of the exhaust volume adjustment section 95. (See attached image.) Figure 3 As shown, in the processing space 2S of the substrate cleaning apparatus 1, a gas supply pipe 93 is provided near the top surface 2f. Clean air is supplied to the gas supply pipe 93 from a gas supply device 98 located outside the unit frame 2. The gas supply pipe 93 has a gas outlet 93a that opens downwards. Figure 3 As indicated by the thicker dashed arrow, clean air supplied to the gas supply pipe 93 is supplied from the gas outlet 93a to the bottom surface 2a. This creates a downward airflow of clean air within the processing space 2S.

[0091] The exhaust volume adjustment unit 95 includes a rotating shaft 95a, a baffle 95b, and an actuator 95c, and is disposed within a processing space 2S as part of the exhaust system 94. More specifically, the rotating shaft 95a is fixed inside the piping of the exhaust system 94. The baffle 95b is mounted on the rotating shaft 95a and is rotatable inside the piping of the exhaust system 94.

[0092] exist Figures 3-5 In the diagram, to facilitate understanding of the structure of the exhaust volume adjustment unit 95, the rotating shaft 95a and the baffle 95b, which are located inside the exhaust system 94, are shown in solid lines. The actuator 95c is based on the control unit 9 (described later). Figure 6 The actuator 95c controls the rotation of the baffle 95b between several preset rotation angle positions (three in this example) with the rotation axis 95a as a reference. Furthermore, the actuator 95c holds the baffle 95b at any of the preset rotation angle positions. In this embodiment, the first, second, and third rotation angle positions are determined as the three preset rotation angle positions.

[0093] exist Figure 3 In the example, this represents the state of the baffle 95b remaining at the first rotation angle position. For example... Figure 3 As shown, when the baffle 95b is in the first rotation angle position, it largely blocks the gas flow path inside the exhaust system 94. At this time, a small gap is formed between the inner circumferential surface of the exhaust system 94 and the baffle 95b. Therefore, when the baffle 95b is in the first rotation angle position, as... Figure 3 As indicated by the solid arrow, the gas in the processing space 2S is discharged to the outside of the unit frame 2 through the exhaust system 94 at a lower first flow rate.

[0094] On the other hand, Figure 4 In the example, this represents the state of the baffle 95b maintained at the second rotation angle position. For example... Figure 4 As shown, when the baffle 95b is in the second rotation angle position, it blocks approximately half of the gas flow path inside the exhaust system 94. Therefore, when the baffle 95b is in the second rotation angle position, as... Figure 4 As indicated by the thicker solid arrow, the gas in the processing space 2S is discharged to the outside of the unit frame 2 through the exhaust system 94 at a second flow rate greater than the first flow rate.

[0095] On the other hand, Figure 5 In the example, this represents the state of the baffle 95b maintained at the 3rd rotation angle position. For example... Figure 5 As shown, when the baffle 95b is in the third rotation angle position, it opens most of the gas flow path inside the exhaust system 94. Therefore, when the baffle 95b is in the third rotation angle position, as... Figure 5 As indicated by the blank arrow, the gas in the processing space 2S is discharged to the outside of the unit frame 2 through the exhaust system 94 at a third flow rate greater than the second flow rate.

[0096] As described above, by adjusting the rotation angle of the baffle 95b, the flow rate of the gas discharged from the processing space 2S through the exhaust system 94 and the exhaust device 99 can be adjusted according to the exhaust volume adjustment unit 95. Here, the flow rate of the gas discharged through the exhaust system 94 is the amount of gas flowing through the exhaust system 94 per unit time.

[0097] like Figure 2 As shown, at a height above the measuring cup 61, a pair of upper retaining devices 10A and 10B are arranged opposite each other across the base device 30 in a top-down view. Upper retaining device 10A includes a lower chuck 11A, an upper chuck 12A, a lower chuck drive unit 13A, and an upper chuck drive unit 14A. Upper retaining device 10B includes a lower chuck 11B, an upper chuck 12B, a lower chuck drive unit 13B, and an upper chuck drive unit 14B.

[0098] The lower chucks 11A and 11B are arranged symmetrically in the Y direction (front-to-back direction) relative to the center of the adsorption holding part 21 when viewed from above, and are movable in the X direction within a common horizontal plane. Each of the lower chucks 11A and 11B has two support plates that can support the lower surface periphery of the substrate W from below. The lower chuck drive parts 13A and 13B move the lower chucks 11A and 11B by either bringing them closer together or moving them further apart.

[0099] Like the lower chucks 11A and 11B, the upper chucks 12A and 12B are symmetrically arranged in a vertical plane extending in the Y direction (front-back direction) relative to the center of the adsorption holding part 21 when viewed from above, and are movable in the X direction within a common horizontal plane. Each of the upper chucks 12A and 12B has two holding tabs configured to abut against two portions of the outer peripheral end of the substrate W to hold the outer peripheral end of the substrate W. The upper chuck drive parts 14A and 14B move the upper chucks 12A and 12B by either bringing them closer together or moving them further apart.

[0100] like Figure 1 As shown, a top surface cleaning device 70 is provided on one side of the cup 61, near the upper holding device 10B in a top view. The top surface cleaning device 70 includes a rotating support shaft 71, an arm 72, a spray nozzle 73, and a top surface cleaning drive unit 74.

[0101] The rotating support shaft 71 extends vertically on the bottom part 2a and is supported by the upper surface cleaning drive part 74, allowing it to be raised, lowered, and rotated. For example... Figure 2 As shown, arm 72 is positioned above the upper holding device 10B, extending horizontally from the upper end of the rotary support shaft 71. A spray nozzle 73 is mounted at the front end of arm 72.

[0102] The upper surface cleaning fluid supply unit 75 is connected to the spray nozzle 73. Figure 6 The upper surface cleaning fluid supply unit 75 supplies cleaning fluid and gas to the spray nozzle 73. In this embodiment, pure water is used as the cleaning fluid supplied to the spray nozzle 73, and an inert gas such as nitrogen is used as the gas supplied to the spray nozzle 73. When the spray nozzle 73 cleans the upper surface of the substrate W, it mixes the cleaning fluid supplied from the upper surface cleaning fluid supply unit 75 with the gas to generate a mixed fluid, and sprays the generated mixed fluid downward.

[0103] The upper surface cleaning drive unit 74 includes one or more pulse motors and cylinders, which raise and lower the rotating support shaft 71 and rotate the rotating support shaft 71. According to the above configuration, on the upper surface of the substrate W, which is adsorbed, held and rotated by the adsorption and holding unit 21, the spray nozzle 73 moves in an arc shape, thereby cleaning the entire upper surface of the substrate W.

[0104] like Figure 1 As shown, on the other side of the cup 61, near the upper holding device 10A in a top view, an end cleaning device 80 is provided. The end cleaning device 80 includes a rotating support shaft 81, an arm 82, an angled brush 83, and an angled brush drive unit 84.

[0105] The rotating support shaft 81 extends vertically on the bottom surface 2a and is supported by the angled brush drive unit 84, allowing it to be raised, lowered, and rotated. Figure 2 As shown, the arm 82 is positioned above the upper holding device 10A and extends horizontally from the upper end of the rotary support shaft 81. At the front end of the arm 82, an angled brush 83 is provided that protrudes downward and is rotatable about an axis in the vertical direction.

[0106] The upper half of the angled brush 83 has an inverted frustum shape and the lower half has a frustum shape. According to the angled brush 83, the outer peripheral end of the substrate W can be cleaned in the central part of the outer peripheral surface in the vertical direction.

[0107] The angled brush drive unit 84 includes one or more pulse motors and cylinders, which raise and lower the rotating support shaft 81 and rotate the rotating support shaft 81. According to the above configuration, the central portion of the outer peripheral surface of the angled brush 83 contacts the outer peripheral end of the substrate W, which is adsorbed, held, and rotated by the adsorption and holding unit 21, thereby cleaning the entire outer peripheral end of the substrate W.

[0108] Here, the angled brush drive unit 84 also includes a motor built into the arm 82. The motor causes the angled brush 83, which is located at the front end of the arm 82, to rotate about an axis in the vertical direction. Therefore, when cleaning the outer peripheral end of the substrate W, the cleaning force of the angled brush 83 at the outer peripheral end of the substrate W is increased by rotating the angled brush 83.

[0109] Figure 6 It means Figure 1 A block diagram showing the configuration of the control system of the substrate cleaning device 1. Figure 6The control unit 9 includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), and a storage device. RAM serves as the CPU's operating area. ROM stores the system program. The storage device stores the control program. The CPU controls the operation of each part of the substrate cleaning apparatus 1 by executing the substrate cleaning program stored in the storage device on RAM.

[0110] like Figure 6 As shown, the control unit 9 mainly receives the substrate W that is brought into the substrate cleaning apparatus 1 and holds it above the adsorption holding unit 21, and controls the lower chuck drive units 13A and 13B and the upper chuck drive units 14A and 14B. In addition, the control unit 9 mainly controls the adsorption holding drive unit 22 to adsorb and hold the substrate W by the adsorption holding unit 21 and to rotate the adsorbed and held substrate W.

[0111] In addition, the control unit 9 mainly controls the base drive unit 33 to move the movable base 32 relative to the substrate W held by the upper holding devices 10A and 10B. In addition, the control unit 9 controls the pin lifting drive unit 43 to move the substrate W between the height position of the substrate W held by the upper holding devices 10A and 10B and the height position of the substrate W held by the adsorption holding unit 21.

[0112] In addition, the control unit 9 controls the lower surface brush rotation drive unit 55a, the lower surface brush lifting drive unit 55b, the lower surface brush moving drive unit 55c, the lower surface cleaning liquid supply unit 56, and the ejected gas supply unit 57 in order to clean the lower surface of the substrate W. Furthermore, the control unit 9 controls the cup drive unit 62 to catch the cleaning liquid that splashes from the substrate W when it is being held by the adsorption and holding unit 21.

[0113] In addition, the control unit 9 controls the upper surface cleaning drive unit 74 and the upper surface cleaning fluid supply unit 75 to clean the upper surface of the substrate W held by the adsorption and holding unit 21. Furthermore, the control unit 9 controls the angled brush drive unit 84 to clean the outer peripheral end of the substrate W held by the adsorption and holding unit 21. Moreover, the control unit 9 controls the gate drive unit 92 to open and close the loading and unloading outlet 2x of the unit frame 2 when the substrate W is loaded into and unloaded from the substrate cleaning apparatus 1. Finally, the control unit 9 controls the exhaust volume adjustment unit 95 to adjust the flow rate of the gas flowing through the exhaust system 94.

[0114] 2. Brief Operation of the Substrate Cleaning Equipment

[0115] Figures 7-18 It is used to explain Figure 1 A schematic diagram illustrating a general example of the operation of the substrate cleaning apparatus 1. Figures 7-18 In each figure, the top section shows a top view of the substrate cleaning apparatus 1. The middle section shows a side view of the lower holding device 20 and its periphery as viewed along the Y direction, and the bottom section shows a side view of the lower holding device 20 and its periphery as viewed along the X direction. The side view of the middle section corresponds to... Figure 1 The side view of line AA, the side view of the lower segment corresponds to Figure 1 The BB line side view. Furthermore, to facilitate understanding of the shape and operating state of each component of the substrate cleaning apparatus 1, the scaling factor of some components differs between the top view of the upper section and the side views of the middle and lower sections. Additionally, in Figures 7-18 In the diagram, cup 61 is represented by a double-dotted line, and the shape of substrate W is represented by a thicker single-dotted line.

[0116] In the initial state before the substrate W is loaded into the substrate cleaning device 1, the gate 91 of the opening and closing device 90 will close the loading and unloading outlet 2x. Additionally, as... Figure 1 As shown, the lower chucks 11A and 11B maintain a distance between each other that is sufficiently greater than the diameter of the substrate W. Similarly, the upper chucks 12A and 12B also maintain a distance between each other that is sufficiently greater than the diameter of the substrate W. Furthermore, the movable stage 32 of the stage assembly 30 is configured such that, when viewed from above, the center of the adsorption holding section 21 is located at the center of the processing cup 61. The lower surface cleaning device 50 is positioned close to the movable stage 32. The lifting support 54 of the lower surface cleaning device 50 positions the cleaning surface (upper end) of the lower surface brush 51 below the adsorption holding section 21.

[0117] Furthermore, the transfer device 40 is positioned with multiple support pins 41 located below the adsorption holding section 21. Additionally, in the cup device 60, the processing cup 61 is in the lower cup position. In the following description, the center position of the processing cup 61 viewed from above will be referred to as the planar reference position rp. Furthermore, the position of the movable platform 32 on the bottom surface 2a when the center of the adsorption holding section 21 is located at the planar reference position rp viewed from above will be referred to as the first horizontal position.

[0118] The substrate W is moved into the unit frame 2 of the substrate cleaning apparatus 1. Specifically, just before the substrate W is about to be moved in, the gate 91 opens the inlet / outlet 2x. Then, as... Figure 7 As shown by the thicker solid arrow a1, the substrate handling robot's hand (substrate holding part) RH (not shown) moves the substrate W into the approximate center position within the unit frame 2 via the loading / unloading outlet 2x. At this time, the substrate W held by the hand RH... Figure 7 As shown, it is located between the lower chuck 11A and the upper chuck 12A and the lower chuck 11B and the upper chuck 12B.

[0119] Next, as Figure 8 As indicated by the thicker solid arrow a2, the lower chucks 11A and 11B are positioned below the lower peripheral edge of the substrate W, bringing them close together. In this state, the hand RH descends and exits from the loading / unloading outlet 2x. Thus, multiple portions of the lower peripheral edge of the substrate W held by the hand RH are supported by the multiple support pieces of the lower chucks 11A and 11B. After the hand RH exits, the gate 91 closes the loading / unloading outlet 2x.

[0120] Next, as Figure 9 As shown by the thicker solid arrow a3, the upper chucks 12A and 12B approach each other by abutting against the outer peripheral ends of the substrate W through the multiple retaining tabs of the upper chucks 12A and 12B. The substrate W, supported by the lower chucks 11A and 11B, is also held by the upper chucks 12A and 12B through the contact between the multiple retaining tabs of the upper chucks 12A and 12B and multiple portions of the outer peripheral ends of the substrate W. Furthermore, as... Figure 9 As indicated by the thicker solid arrow a4, the movable platform 32 moves forward from the first horizontal position with the adsorption holding part 21 offset from the plane reference position rp by a specific distance and the center of the lower surface brush 51 located at the plane reference position rp. At this time, the position of the movable platform 32 located on the bottom part 2a is referred to as the second horizontal position.

[0121] Next, as Figure 10 As indicated by the thicker solid arrow a5, the lifting support 54 rises by contacting the cleaning surface of the lower surface brush 51 with the central region of the lower surface of the substrate W. Additionally, as... Figure 10 As indicated by the thicker solid arrow a6, the lower surface brush 51 rotates (spins) about an axis in the vertical direction. This physically removes contaminants adhering to the central region of the lower surface of the substrate W.

[0122] exist Figure 10The lower section shows an enlarged side view within the white box, depicting the portion where the lower surface brush 51 contacts the lower surface of the substrate W. As shown within the white box, with the lower surface brush 51 in contact with the substrate W, the liquid nozzle 52 and the gas ejection section 53 are held close to the lower surface of the substrate W. At this time, the liquid nozzle 52, as indicated by the white arrow a51, sprays cleaning fluid onto the lower surface of the substrate W near the lower surface brush 51. Thus, by guiding the cleaning fluid supplied from the liquid nozzle 52 to the lower surface of the substrate W to the contact portion between the lower surface brush 51 and the substrate W, contaminants removed from the back side of the substrate W by the lower surface brush 51 are rinsed away by the cleaning fluid. In this way, in the lower surface cleaning apparatus 50, the liquid nozzle 52 and the lower surface brush 51 are mounted together on the lifting support section 54. This allows for efficient supply of cleaning fluid to the portion of the lower surface of the substrate W cleaned by the lower surface brush 51. Therefore, the consumption of cleaning fluid is reduced, and excessive dispersion of the cleaning fluid is suppressed.

[0123] Here, the upper surface 54u of the lifting support 54 is inclined downwards in a direction away from the adsorption holding part 21. In this case, when the cleaning liquid containing contaminants falls from the lower surface of the substrate W onto the lifting support 54, the cleaning liquid caught by the upper surface 54u will be guided in a direction away from the adsorption holding part 21.

[0124] Additionally, when the lower surface of the substrate W is cleaned by the lower surface brush 51, the gas ejection section 53, as shown... Figure 10 As indicated by the white arrow a52 within the dialogue box, gas is sprayed onto the lower surface of the substrate W at a position between the lower surface brush 51 and the adsorption holding portion 21. In this embodiment, the gas ejection portion 53 is mounted on the lifting support portion 54 with the gas ejection nozzle extending in the X direction. In this case, when gas is sprayed onto the lower surface of the substrate W from the gas ejection portion 53, a strip-shaped air curtain extending in the X direction is formed between the lower surface brush 51 and the adsorption holding portion 21. This prevents the cleaning liquid containing contaminants from scattering onto the adsorption holding portion 21 when the lower surface of the substrate W is cleaned by the lower surface brush 51. Therefore, when the lower surface of the substrate W is cleaned by the lower surface brush 51, the cleaning liquid containing contaminants is prevented from adhering to the adsorption holding portion 21, thus keeping the adsorption surface of the adsorption holding portion 21 clean.

[0125] In addition, Figure 10 In the example, as shown by the white arrow a52, gas is ejected from the gas ejection section 53 obliquely upwards and downwards from the lower surface brush 51, but the present invention is not limited to this. The gas ejection section 53 may also eject gas from the gas ejection section 53 toward the lower surface of the substrate W along the Z direction.

[0126] Next, in Figure 10In this state, if the cleaning of the central region of the lower surface of the substrate W is completed, then the rotation of the lower surface brush 51 is stopped, and the lifting support 54 is lowered such that the cleaning surface of the lower surface brush 51 is separated from the substrate W by a specific distance. Additionally, the spraying of cleaning liquid from the liquid nozzle 52 onto the substrate W is stopped. At this time, gas continues to be sprayed onto the substrate W from the gas ejection section 53.

[0127] After that, as Figure 11 As indicated by the thicker solid arrow a7, the movable stage 32 is moved rearward with the adsorption holding part 21 positioned at the planar reference position rp. That is, the movable stage 32 moves from the second horizontal position to the first horizontal position. At this time, by continuing to spray gas from the gas ejection part 53 onto the substrate W, the central region of the lower surface of the substrate W is sequentially dried by the gas curtain.

[0128] Next, as Figure 12 As indicated by the thicker solid arrow a8, the lifting support 54 is lowered such that the cleaning surface of the lower surface brush 51 is located below the adsorption surface (upper end) of the adsorption holding part 21. Additionally, as... Figure 12 As indicated by the thicker solid arrow a9, the upper chucks 12A and 12B are separated from the outer periphery of the substrate W by multiple retaining tabs, thus moving the upper chucks 12A and 12B away from each other. At this time, the substrate W is supported by the lower chucks 11A and 11B.

[0129] After that, as Figure 12 As indicated by the thicker solid arrow a10, the pin connecting member 42 is raised such that the upper ends of the multiple support pins 41 are positioned slightly above the lower chucks 11A and 11B. Thus, the substrate W, supported by the lower chucks 11A and 11B, is received by the multiple support pins 41.

[0130] Next, as Figure 13 As indicated by the thicker solid arrow a11, the lower chucks 11A and 11B are moved away from each other. At this point, the lower chucks 11A and 11B have moved to a position where, from a top-down view, they do not overlap with the substrate W supported by multiple support pins 41. Consequently, the upper holding devices 10A and 10B return to their initial state.

[0131] Next, as Figure 14 As indicated by the thicker solid arrow a12, the pin connecting member 42 is lowered such that the upper ends of the multiple support pins 41 are positioned below the adsorption holding portion 21. Consequently, the substrate W supported on the multiple support pins 41 is received by the adsorption holding portion 21. In this state, the adsorption holding portion 21 adsorbs and holds the central region of the lower surface of the substrate W. Simultaneously with or after the lowering of the pin connecting member 42, as... Figure 14 As shown by the thicker solid arrow a13, the processing cup 61 rises from the lower cup position to the upper cup position.

[0132] Next, as Figure 15 As shown by the thicker solid arrow a14, the adsorption holding portion 21 rotates about an axis in the vertical direction (the axis of rotation of the adsorption holding drive portion 22). As a result, the substrate W adsorbed and held in the adsorption holding portion 21 rotates in a horizontal position.

[0133] Next, the rotating support shaft 71 of the upper surface cleaning device 70 rotates and descends. Thus, as... Figure 15 As indicated by the thicker solid arrow a15, the spray nozzle 73 moves to a position above the center of the substrate W, and descends such that the distance between the spray nozzle 73 and the substrate W is a preset distance. In this state, the spray nozzle 73 sprays a mixture of cleaning liquid and gas onto the upper surface of the substrate W. Furthermore, the rotation support shaft 71 rotates. Thus, as... Figure 15 As indicated by the thicker solid arrow a16, the spray nozzle 73 moves outward from the center of the rotating substrate W. The entire upper surface of the substrate W is cleaned by spraying the mixed fluid onto it.

[0134] Additionally, while the upper surface of the substrate W is being cleaned by the spray nozzle 73, the rotating support shaft 81 of the end cleaning device 80 also rotates and descends. Thus, as... Figure 15 As indicated by the thicker solid arrow a17, the angled brush 83 moves to a position above the outer peripheral end of the substrate W. Furthermore, the central portion of the outer peripheral surface of the angled brush 83 descends to contact the outer peripheral end of the substrate W. In this state, the angled brush 83 rotates (spins) about an axis in the vertical direction. Thus, the angled brush 83 physically removes contaminants adhering to the outer peripheral end of the substrate W. The contaminants removed from the outer peripheral end of the substrate W are then rinsed by a cleaning solution of a mixed fluid sprayed from the spray nozzle 73 onto the substrate W.

[0135] Furthermore, when the upper surface of the substrate W is cleaned by the spray nozzle 73, the lifting support 54 is raised by contacting the cleaning surface of the lower surface brush 51 with the outer region of the lower surface of the substrate W. Additionally, as... Figure 15 As indicated by the thicker solid arrow a18, the lower surface brush 51 rotates (spins) about an axis in the vertical direction. Furthermore, the liquid nozzle 52 sprays cleaning liquid onto the lower surface of the substrate W, and the gas ejection section 53 sprays gas onto the lower surface of the substrate W. Thus, the lower surface brush 51 cleans the entire outer region of the lower surface of the substrate W, which is held and rotated by the adsorption and holding section 21.

[0136] The rotation direction of the lower surface brush 51 can be opposite to the rotation direction of the adsorption and holding portion 21. In this case, the outer region of the lower surface of the substrate W can be effectively cleaned. Furthermore, when the lower surface brush 51 is not large, such as... Figure 15As shown by the thicker solid arrow a19, the movable support 55 can also move forward and backward between the approach position and the separation position on the movable base 32. Even in this case, the outer region of the lower surface of the substrate W, which is held and rotated by the adsorption and holding part 21, is cleaned by the lower surface brush 51. When cleaning the upper surface, outer peripheral end, and outer region of the lower surface of the substrate W (during the cleaning process), the rotation speed of the substrate W is set to approximately 200 rpm to 500 rpm as the first rotation speed.

[0137] Next, once the cleaning of the upper surface, outer peripheral end, and outer region of the lower surface of substrate W is complete, the spraying of the mixing fluid from the spray nozzle 73 onto substrate W is stopped. Additionally, as... Figure 16 As indicated by the thicker solid arrow a20, the spray nozzle 73 has moved to one side of the cup 61 (the initial position). Additionally, as... Figure 16 As indicated by the thicker solid arrow a21, the angled brush 83 moves to the other side of the cup 61 (the initial position). Furthermore, the rotation of the lower surface brush 51 is stopped, and the lifting support 54 is lowered such that the cleaning surface of the lower surface brush 51 is separated from the substrate W by a specific distance. Additionally, the spraying of cleaning liquid from the liquid nozzle 52 onto the substrate W and the spraying of gas from the gas ejection section 53 onto the substrate W are stopped. In this state, the cleaning liquid adhering to the substrate W is shaken off by the high-speed rotation of the adsorption holding section 21, drying the entire substrate W (drying process). During the shaking off of the cleaning liquid from the substrate W (drying process), the rotational speed of the substrate W is set to, for example, approximately 2000 rpm to 4000 rpm, as a second rotational speed higher than the first rotational speed.

[0138] Next, as Figure 17 As indicated by the thicker solid line arrow a22, cup 61 descends from the upper cup position to the lower cup position. Additionally, as... Figure 17 As indicated by the thicker solid arrow a23, the lower chucks 11A and 11B are brought close to each other to a position that can support the new substrate W, so that the new substrate W can be moved into the unit frame 2.

[0139] Finally, the substrate W is removed from the unit frame 2 of the substrate cleaning apparatus 1. Specifically, just before the substrate W is removed, the gate 91 opens the inlet / outlet 2x. Then, as... Figure 18 As shown by the thicker solid arrow a24, the hand (substrate holding section) RH of the substrate transfer robot (not shown) enters the unit frame 2 through the transfer inlet / outlet 2x. Next, the hand RH receives the substrate W on the adsorption holding section 21 and exits through the transfer inlet / outlet 2x. After the hand RH exits, the gate 91 closes the transfer inlet / outlet 2x.

[0140] 3. Control example of exhaust volume adjustment unit 95

[0141] In the control unit 9 of this embodiment, a table is stored in the storage device in advance, which shows the relationship between the holding state of the substrate W, the processing state of the substrate W, and the flow rate of the gas to be discharged from the processing space 2S, as an exhaust adjustment table. Hereinafter, the flow rate of the gas to be discharged from the processing space 2S through the exhaust system 94 will be referred to as the target flow rate. Figure 19 This is a diagram illustrating an example of an adjustment table.

[0142] exist Figure 19 In the discharge adjustment table, for the state where the substrate W is not held by any of the upper holding devices 10A, 10B and the adsorption holding section 21, the target flow rate is set to the first flow rate. Additionally, for the state where the substrate W is held by the upper holding devices 10A, 10B and is not processed, the target flow rate is set to the first flow rate. Furthermore, for the state where the substrate W is held by the upper holding devices 10A, 10B and is not washed or dried, the target flow rate is set to the first flow rate. When the substrate W is held by the upper holding devices 10A, 10B, the substrate W does not rotate, and Figure 2 Cup 61 is in the lower cup position.

[0143] Furthermore, for the state where the substrate W is held by the adsorption holding unit 21 and is not processed, the target flow rate is set to the second flow rate. Additionally, for the state where the substrate W is held by the adsorption holding unit 21 and is being cleaned, the target flow rate is set to the second flow rate. Furthermore, for the state where the substrate W is held by the adsorption holding unit 21 and is being dried, the target flow rate is set to the third flow rate. In the state where the substrate W is held by the adsorption holding unit 21 and is not processed, the substrate W does not rotate, and Figure 2 The cup 61 is in the lower cup position. While the substrate W is held by the adsorption holding part 21 and undergoing washing or drying, the substrate W rotates, and Figure 2 Cup 61 is in the upper position.

[0144] Control Unit 9 Figures 7-18 During a series of operations of the substrate cleaning device 1, based on Figure 19 The discharge adjustment table controls the exhaust volume adjustment unit 95. Specifically, the control unit 95 controls the exhaust volume adjustment unit when the substrate cleaning device 1 is in the position of the discharge adjustment table. Figure 7 , Figure 8 , Figure 9 , Figure 10 , Figure 11 , Figure 12 and Figure 13 When the state shown is reached, the target flow rate is set to the first flow rate, and the exhaust volume adjustment unit 95 is controlled. Additionally, the control unit 9 controls the substrate cleaning apparatus 1 when it is in the specified state. Figure 14 , Figure 15 , Figure 17 and Figure 18 When the state shown is reached, the target flow rate is set to the second flow rate, and the exhaust volume adjustment unit 95 is controlled. Furthermore, the control unit 9 controls the substrate cleaning apparatus 1 when it is in the specified state. Figure 16 When the state shown is when the cleaning solution of the substrate W is removed (drying process), the target flow rate is set to the third flow rate and the exhaust volume adjustment unit 95 is controlled.

[0145] 4. Regarding the effectiveness of substrate cleaning device 1

[0146] (1) In the substrate cleaning apparatus 1, the substrate W is held horizontally and without rotation by the upper holding devices 10A and 10B. The substrate W is cleaned in this state. Because the substrate W does not rotate during cleaning, the cleaning liquid is less likely to scatter from the substrate W. Therefore, even when the gas in the processing space 2S is discharged at a relatively low first flow rate, a high level of cleanliness is maintained within the processing space 2S.

[0147] Furthermore, in the substrate cleaning apparatus 1, the substrate W is held horizontally and rotated about an axis in the vertical direction by the lower holding device 20. The substrate W is cleaned in this state. During cleaning and drying of the substrate W held by the lower holding device 20, the cleaning liquid easily scatters from the substrate W due to its rotation. Therefore, when the substrate W is held by the lower holding device 20, the gas in the processing space 2S is discharged at a higher second or third flow rate. In this case, the cleaning liquid scattering from the substrate W is effectively discharged from the processing space 2S. This suppresses a decrease in cleanliness within the processing space 2S.

[0148] According to the aforementioned configuration, the exhaust capacity of the exhaust device 99 required in one substrate cleaning apparatus 1 is adjusted over time. Therefore, when multiple substrate cleaning apparatuses 1 are used with one exhaust device 99, the multiple substrate cleaning apparatuses 1 can be controlled in a manner that the substrate W held by the lower holding device 20 is not simultaneously cleaned and dried. In this case, the level of exhaust capacity of the exhaust device 99 required for multiple substrate cleaning apparatuses 1 simultaneously is reduced. As a result, a high level of cleanliness can be maintained in the processing space 2S of more substrate cleaning apparatuses 1 using an exhaust device 99 with a preset exhaust capacity.

[0149] (2) When the substrate W with the cleaning liquid attached is rotating, the higher the rotation speed, the easier it is for the spray of cleaning liquid scattering from the substrate W to diffuse within the processing space 2S. According to the above configuration, the third rotation speed of the substrate W when the cleaning liquid is being removed is higher than the second rotation speed of the substrate W during cleaning. Therefore, when the cleaning liquid on the substrate W is being removed, the spray of cleaning liquid easily diffuses within the processing space 2S. Even in the above case, when the cleaning liquid on the substrate W is being removed, the gas in the processing space 2S is discharged at a third flow rate that is higher than the first and second flow rates during cleaning of the substrate W. Therefore, a high level of cleanliness is maintained in the processing space 2S when the cleaning liquid on the substrate W is being removed.

[0150] Furthermore, according to the aforementioned configuration, based on the rotational speed of the substrate W, the amount of cleaning liquid sprayed within the processing space 2S during substrate W cleaning is less than the amount of cleaning liquid sprayed within the processing space 2S during substrate W spin-drying. Therefore, even if the second flow rate of the gas discharged during substrate W cleaning is lower than the third flow rate of the gas discharged when the cleaning liquid from the substrate W is spun off, sufficient gas discharge is performed during substrate W cleaning to maintain the cleanliness of the processing space 2S. Thus, excessive exhaust capacity is prevented from being required of the exhaust device 99 while the substrate W is held by the lower holding device 20.

[0151] (3) In the substrate cleaning apparatus 1, a cup 61 is arranged to surround the lower holding device 20 when viewed from above. An exhaust system 94 is provided to exhaust gas from the processing space 2S from the bottom of the cup 61. In this case, the cup 61 can catch the cleaning liquid that sprays from the substrate W held by the lower holding device 20. Furthermore, the spray of cleaning liquid that sprays inside the cup 61 is smoothly discharged from the bottom of the cup 61 to the outside of the unit frame 2.

[0152] 5. A substrate cleaning system equipped with multiple substrate cleaning units 1

[0153] (1) Basic components of a substrate cleaning system

[0154] Figure 20 This is a schematic top view illustrating an example of a substrate cleaning system equipped with multiple substrate cleaning devices 1. Figure 20 As shown, the substrate cleaning system 100 of this embodiment includes a transfer block 110 and a processing block 120. The transfer block 110 and the processing block 120 are arranged adjacent to each other.

[0155] The transfer block 110 includes multiple (four in this example) carrier placement stages 140 and a transport section 150. The multiple carrier placement stages 140 are connected to the transport section 150. On each carrier placement stage 140, multiple carriers C that hold multiple substrates W are placed. In the transport section 150, a transfer robot IR and a control device 111 are provided. The transfer robot IR is configured to move within the transport section 150 and is configured to rotate about a vertical axis and be able to move up and down. The transfer robot IR has two arms for transferring substrates W. The control device 111 includes a computer containing a CPU, ROM, and RAM, etc., and controls the various components within the substrate cleaning system 100.

[0156] The processing block 120 includes a cleaning section 161 and a conveying section 162. The cleaning section 161 and the conveying section 162 are arranged adjacent to and sequentially arranged with respect to the conveying section 150. In the cleaning section 161, a plurality of (four in this example) substrate cleaning devices 1 are stacked on top of each other.

[0157] In the transfer section 163, a main robot MR is installed. The main robot MR is configured to rotate about a vertical axis and to move up and down. The main robot MR has two hands for receiving the substrate W. The hands of the main robot MR are equivalent to the hand RH.

[0158] Between the transfer block 110 and the processing block 120, multiple substrate mounting sections PASS are stacked on top of each other to facilitate the transfer of substrate W between the transfer robot IR and the main robot MR.

[0159] In the substrate cleaning system 100, a transfer robot IR removes an untreated substrate W from one of a plurality of carriers C placed on a plurality of carrier placement stages 140. The transfer robot IR then places the removed untreated substrate W into any one of a plurality of substrate placement sections PASS. Furthermore, the transfer robot IR receives the treated substrate W placed in any one of the plurality of substrate placement sections PASS and stores it within a carrier C.

[0160] Additionally, the main robot MR receives an untreated substrate W placed in any one of the multiple substrate placement sections PASS and moves it into any one of the multiple substrate cleaning devices 1 in the cleaning section 161. Furthermore, when the cleaning process in any of the multiple substrate cleaning devices 1 is completed, the main robot MR removes the treated substrate W from the substrate cleaning device 1 and places it in any one of the multiple substrate placement sections PASS.

[0161] As mentioned above, Figure 20 The substrate cleaning system 100 has multiple Figure 1The substrate cleaning apparatus 1 allows for the cleaning of both the upper and lower surfaces of the substrate W within a single apparatus 1 without inverting the substrate W. This increases the throughput of the substrate W cleaning process. Furthermore, by cascading multiple substrate cleaning apparatuses 1, the increase in occupied area is significantly reduced.

[0162] Figure 21 yes Figure 20 A schematic side view of the substrate cleaning system 1000. Figure 21 The schematic side view mainly shows the internal structure of the conveying section 150 and the internal structure of the washing section 161. For example... Figure 21 As shown, four substrate cleaning devices 1 are arranged in the cleaning section 161. In the following description, each will be distinguished... Figure 21 In the case of four substrate cleaning devices 1, the substrate cleaning device 1 located at the bottom is referred to as the first substrate cleaning device 1A, the substrate cleaning device 1 located in the second segment from the bottom is referred to as the second substrate cleaning device 1B. In addition, the substrate cleaning device 1 located in the third segment from the bottom is referred to as the third substrate cleaning device 1C, and the substrate cleaning device 1 located at the top is referred to as the fourth substrate cleaning device 1D.

[0163] Clean air is supplied to the gas supply pipes 93 of each of the first to fourth substrate cleaning apparatuses 1A to 1D from an external gas supply device 98 located outside the cleaning section 161. As a result, a downward airflow of clean air is formed within the processing space 2S of the first to fourth substrate cleaning apparatuses 1A to 1D.

[0164] In this embodiment, an exhaust device 99 installed in the factory where the substrate cleaning system 100 is installed is commonly used in the first to fourth substrate cleaning devices 1A to 1D of the substrate cleaning system 100. The four exhaust systems 94 of each of the first to fourth substrate cleaning devices 1A to 1D are connected to the bottom of the four cups 61 of the first to fourth substrate cleaning devices 1A to 1D and the exhaust device 99.

[0165] The exhaust device 99 discharges the gas guided to it to the outside of the substrate cleaning system 100 with a certain exhaust capacity. The gas in the processing space 2S of each of the first to fourth substrate cleaning devices 1A to 1D is discharged to the outside of the substrate cleaning system 100 at any of the first to third flow rates, depending on the state of the exhaust volume adjustment unit 95 provided in the exhaust system 94 of the substrate cleaning device 1.

[0166] (2) A control example of a substrate cleaning system

[0167] Here, in Figure 19In the processing states of substrate W recorded in the discharge adjustment table, the state in which substrate W is not held by any one of the upper holding devices 10A, 10B and adsorption holding part 21, and the state in which substrate W is held by the upper holding devices 10A, 10B and the substrate W is subjected to washing or drying treatment are referred to as the first processing state (reference). Figure 19 (A thicker dashed box). Furthermore, the state in which the substrate W is held by the adsorption holding part 21 and is not processed, and the state in which the substrate W is held by the adsorption holding part 21 and is cleaned, are referred to as the second processing state (see reference). Figure 19 (A thicker dashed box). Furthermore, the state in which the substrate W is held by the adsorption holding part 21 and the substrate W is dried is referred to as the third processing state (see reference). Figure 19 (A relatively thick double-dotted line box).

[0168] The control device 111 of the substrate cleaning system 100 controls the operation of the first to fourth substrate cleaning devices 1A to 1D in such a way that, for example, all the first to fourth substrate cleaning devices 1A to 1D do not simultaneously discharge the gas from the processing space 2S at the third flow rate. A specific example of the control of the first to fourth substrate cleaning devices 1A to 1D under the aforementioned condition will be described.

[0169] Figure 22 It is used to explain Figure 21 A control example of the first to fourth substrate cleaning devices 1A to 1D of the substrate cleaning system 100 is shown in the figure. Figure 22 In this example, multiple processing states of substrate W are used to represent a control example of substrate cleaning apparatus 1A to 1D from the first to the fourth substrates using a time diagram.

[0170] exist Figure 22 In the example, the first substrate cleaning apparatus 1A controls the operation of each part in such a way that the substrate W is maintained in a first processing state from time t1 to time t2, in a second processing state from time t2 to time t3, and in a third processing state from time t3 to time t4. Then, the operation from time t1 to time t4 is repeated after time t4. The second substrate cleaning apparatus 1B controls the operation of each part in the same way as the first substrate cleaning apparatus 1A, performing the same operation in the same timing sequence.

[0171] In response, the third substrate cleaning apparatus 1C controls the operation of each part in a manner that maintains the substrate W in a first processing state from time t2 to time t3, maintains the substrate W in a second processing state from time t3 to time t4, and maintains the substrate W in a third processing state from time t4 to time t5. Afterwards, the operation from time t2 to time t5 is repeated after time t5. The fourth substrate cleaning apparatus 1D controls the operation of each part in the same manner as the third substrate cleaning apparatus 1C, performing the same operation in the same timing sequence.

[0172] according to Figure 22 In a control example, within the substrate cleaning system 100, the substrates W processed by the first to fourth substrate cleaning units 1A to 1D do not simultaneously maintain the third processing state. This prevents all the first to fourth substrate cleaning units 1A to 1D from simultaneously discharging gas from the processing space 2S at the third flow rate. In this case, the level of exhaust capacity required for the exhaust equipment 99 for multiple substrate cleaning units 1 is reduced. Therefore, it is possible to maintain a high level of cleanliness in the processing space 2S of more substrate cleaning units 1 using exhaust equipment 99 with a preset exhaust capacity.

[0173] (3) Another control example of the substrate cleaning system

[0174] Not limited to Figure 22 For example, the control device 111 of the substrate cleaning system 100 can also control the operation of the first to fourth substrate cleaning devices 1A to 1D in such a way that the gas in the processing space 2S is not simultaneously discharged at least one of the second and third flow rates. Specific examples of the control of the first to fourth substrate cleaning devices 1A to 1D under the aforementioned conditions will be described.

[0175] Figure 23 It is used to explain Figure 21 A diagram showing another control example of the first to fourth substrate cleaning devices 1A to 1D of the substrate cleaning system 100. Figure 23 In, with Figure 22 Similarly, another control example is shown using multiple processing states of substrate W to represent the first to fourth substrate cleaning apparatus 1A to 1D in a time diagram.

[0176] exist Figure 23 In the example, the first substrate cleaning apparatus 1A controls the operation of each part in such a way that the substrate W is maintained in a first processing state from time t11 to time t12, in a second processing state from time t12 to time t13, and in a third processing state from time t13 to time t14. Afterwards, after time t14, a certain interval is left (the time required to maintain the substrate W in the second processing state in the third substrate cleaning apparatus 1C), and the operation from time t11 to time t14 is repeated. The second substrate cleaning apparatus 1B controls the operation of each part in the same manner as the first substrate cleaning apparatus 1A, performing the same operation in the same timing sequence.

[0177] In response, the third substrate cleaning apparatus 1C controls the operation of each part in a manner that maintains the substrate W in a first processing state from time t13 to time t14, maintains the substrate W in a second processing state from time t14 to time t15, and maintains the substrate W in a third processing state from time t15 to time t16. Afterwards, regarding time t16, a certain interval (the time required to maintain the substrate W in the second processing state in the first substrate cleaning apparatus 1A) is allowed, and the operation from time t13 to time t16 is repeated. The fourth substrate cleaning apparatus 1D controls the operation of each part in the same manner as the third substrate cleaning apparatus 1C, performing the same operation in the same timing sequence.

[0178] according to Figure 23 In a control example, within the substrate cleaning system 100, the substrate W processed by the first to fourth substrate cleaning devices 1A to 1D does not simultaneously maintain at least one of the second and third processing states. This prevents all the first to fourth substrate cleaning devices 1A to 1D from simultaneously discharging gas from the processing space 2S at at least one of the second and third flow rates.

[0179] In this case, the level of exhaust capacity of the exhaust device 99 required for multiple substrate cleaning units 1 simultaneously is reduced. Therefore, it is possible to maintain a high level of cleanliness in the processing space 2S of more substrate cleaning units 1 using an exhaust device 99 with a preset exhaust capacity.

[0180] 6. Other implementation methods

[0181] (1) In the described embodiment, although a gap is formed between the inner circumferential surface of the exhaust system 94 and the baffle 95b when the baffle 95b of the exhaust volume adjustment unit 95 is in the first rotation angle position, the present invention is not limited thereto. A gap may not be formed between the inner circumferential surface of the exhaust system 94 and the baffle 95b when the baffle 95b of the exhaust volume adjustment unit 95 is in the first rotation angle position. That is, the baffle 95b may also completely block the gas flow path inside the exhaust system 94 when it is in the first rotation angle position. In this case, in the substrate cleaning apparatus 1, when the substrate W is in the first processing state, the gas in the processing space 2S is not discharged to the outside of the substrate cleaning apparatus 1.

[0182] (2) In the substrate cleaning apparatus 1 of the above embodiment, an exhaust opening (not shown) may also be formed on the bottom surface 2a of the unit frame 2. In this case, even if a downward airflow of clean air is formed in the processing space 2S, and the gas is not discharged from the exhaust system 94, a portion of the gas in the processing space 2S is discharged to the outside of the unit frame 2 through the exhaust port (not shown).

[0183] (3) In the substrate cleaning apparatus 1 of the described embodiment, although the lower surface central region of the substrate W is held by the lower holding device 20, the present invention is not limited thereto. The substrate cleaning apparatus 1 may replace the lower holding device 20 with a holding device that holds the upper surface central portion of the substrate W. In this case, the holding device that holds the upper surface central portion of the substrate W may also be provided, for example, above the upper holding devices 10A and 10B.

[0184] (4) In the described embodiment, the substrate cleaning apparatus 1 has been described as an example of a substrate processing apparatus that holds the substrate W without rotation and performs a first processing, and holds the substrate W and rotates it to perform a second processing. Furthermore, a substrate cleaning system 100 equipped with multiple substrate cleaning apparatuses 1 has been described. In addition, in the described embodiment, the cleaning processing of the central region of the lower surface of the substrate W corresponds to the first processing, and the cleaning processing of the outer region of the lower surface of the substrate W, the outer peripheral end, and the upper surface corresponds to the second processing. However, the present invention is not limited to the described example.

[0185] The substrate processing system is not limited to the example of the substrate cleaning device 1, and may also have multiple substrate processing devices to perform processing other than the cleaning process of the substrate W (coating process, heat treatment or film removal process, etc.) as different first and second processes.

[0186] (5) In the described embodiment, although the cleaning of the central region of the lower surface of the substrate W is performed in the upper holding devices 10A and 10B, the cleaning of the outer region of the lower surface of the substrate W is performed in the lower holding device 20, the embodiment is not limited to this. It is also possible to perform the cleaning of the outer region of the lower surface of the substrate W in the lower holding device 20, and then perform the cleaning of the central region of the lower surface of the substrate W in the upper holding devices 10A and 10B.

[0187] (6) In the described embodiment, although the substrate cleaning apparatus 1 includes a control unit 9, the embodiment is not limited thereto. If the substrate cleaning apparatus 1 is configured to be controllable by an external information processing device, the substrate cleaning apparatus 1 may not include a control unit 9. Furthermore, in the described embodiment, although the substrate cleaning system 100 includes a control unit 111, the embodiment is not limited thereto. If the substrate cleaning system 100 is configured to be controllable by an external information processing device, the substrate cleaning system 100 may not include a control unit 111.

[0188] 7. The correspondence between the constituent elements of the claims and the parts of the embodiments.

[0189] Hereinafter, examples of the correspondence between the constituent elements of the claims and the constituent elements of the embodiments will be described, but the present invention is not limited to these examples. Various other constituent elements having the structure or function described in the claims can also be used as constituent elements of the claims.

[0190] In the embodiment described above, substrate W is an example of a substrate, substrate cleaning device 1 is an example of a substrate cleaning device and substrate processing device, processing space 2S is an example of a processing space, unit frame 2 is an example of a processing chamber, upper holding devices 10A and 10B are examples of a first substrate holding part, and lower holding device 20 is an example of a second substrate holding part.

[0191] In addition, the lower surface cleaning device 50, the upper surface cleaning device 70 and the end cleaning device 80 are examples of cleaning and processing units, the exhaust device 99 is an example of an exhaust device, the exhaust system 94 is an example of an exhaust system, and the exhaust volume adjustment unit 95 is an example of an exhaust volume adjustment unit.

[0192] In addition, the first flow rate in the embodiment is an example of the first flow rate, the second and third flow rates in the embodiment are examples of the second flow rate, the second flow rate in the embodiment is an example of the third flow rate, and the third flow rate in the embodiment is an example of the fourth flow rate.

[0193] In addition, the cup 61 is an example of a processing cup, the upper cup position is an example of a first height position, the lower cup position is an example of a second height position, the cup drive unit 62 is an example of a cup drive unit, the control device 111 is an example of a cleaning control unit and a processing control unit, and the substrate cleaning system 100 is an example of a substrate cleaning system and a substrate processing system.

Claims

1. A substrate cleaning apparatus which cleans a substrate, and comprises: a processing chamber having a processing space capable of accommodating a substrate; a first substrate holding section which holds a substrate in a horizontal posture without rotating it by abutting against a plurality of portions of the substrate; a second substrate holding section which holds a substrate in a horizontal posture while rotating it around an axis in the vertical direction by adsorbing to the substrate; a cleaning section which cleans a substrate held by the first substrate holding section using a cleaning liquid in the processing space, and cleans a substrate held by the second substrate holding section using a cleaning liquid before or after cleaning a substrate held by the first substrate holding section; an exhaust system which connects the processing space and an exhaust device provided outside the processing chamber, and exhausts gas in the processing space by the exhaust device; and an exhaust amount adjusting section which adjusts the flow rate of gas flowing through the exhaust system in such a manner that, when a substrate is held by the first substrate holding section and the held substrate is cleaned using a cleaning liquid, no gas in the processing space is exhausted or gas in the processing space is exhausted at a first flow rate, and when a substrate is held by the second substrate holding section and the held substrate is cleaned using a cleaning liquid, gas in the processing space is exhausted at a second flow rate higher than the first flow rate.

2. The substrate cleaning apparatus according to claim 1, wherein the second substrate holding section rotates a substrate after cleaning a substrate held by the second substrate holding section in such a manner that the cleaning liquid used for the cleaning is spun off from the substrate.

3. The substrate cleaning apparatus according to claim 2, wherein the second substrate holding section rotates a substrate at a first rotation speed when a substrate held by the second substrate holding section is cleaned, and rotates the substrate at a second rotation speed higher than the first rotation speed when the cleaning liquid is spun off from the substrate, and the exhaust amount adjusting section adjusts the flow rate of gas flowing through the exhaust system in such a manner that, when the cleaning liquid is spun off from a substrate held by the second substrate holding section, gas in the processing space is exhausted at a third flow rate higher than the second flow rate.

4. The substrate cleaning apparatus according to any one of claims 1 to 3, further comprising a processing cup provided so as to surround the second substrate holding section in a plan view, and the exhaust system is provided so as to exhaust gas in the processing space from the bottom of the processing cup.

5. The substrate cleaning apparatus according to claim 4, further comprising a cup driving section which supports the processing cup and moves the processing cup in the vertical direction between a first height position at which the processing cup overlaps a substrate held by the second substrate holding section in a side view, and a second height position at which the processing cup is below a substrate held by the second substrate holding section in a side view, and the cup driving section supports the processing cup at the first height position in such a manner that the cleaning liquid scattered from a substrate is caught when a substrate is held by the second substrate holding section, and supports the processing cup at the second height position when a substrate is held by the first substrate holding section. ​ ​ ​ ​ ​ ​ ​ ​ ​ 6. A substrate cleaning system having a plurality of the substrate cleaning apparatus according to any one of claims 1 to 5 and provided with a cleaning control section, the exhaust apparatus is commonly used by the plurality of substrate cleaning apparatuses, the cleaning control section controls the operation of the plurality of substrate cleaning apparatuses in such a manner that a substrate is not simultaneously held by the second substrate holding section in the plurality of substrate cleaning apparatuses.

7. A substrate cleaning system having a plurality of the substrate cleaning apparatus according to claim 2 or 3 and provided with a cleaning control section, the exhaust apparatus is commonly used by the plurality of substrate cleaning apparatuses, the cleaning control section controls the operation of the plurality of substrate cleaning apparatuses in such a manner that the cleaning liquid is not simultaneously spun off a substrate in the plurality of substrate cleaning apparatuses.

8. A substrate processing system which performs a specific processing on a substrate and is provided with: a plurality of substrate processing apparatuses; and a processing control section which controls the plurality of substrate processing apparatuses; and the plurality of substrate processing apparatuses each is provided with: a processing chamber having a processing space in which a substrate can be accommodated; a first substrate holding section which holds a substrate in a horizontal posture without rotating it by abutting against a plurality of portions of the substrate; a second substrate holding section which holds a substrate in a horizontal posture while rotating it around an axis in the vertical direction by adsorbing to the substrate; a processing section which performs a first processing on a substrate in the processing space and performs a second processing on the substrate before or after the first processing; an exhaust system which connects the processing space and an exhaust apparatus provided outside the processing chamber and exhausts a gas in the processing space by the exhaust apparatus; and an exhaust amount adjustment section which adjusts the flow rate of a gas flowing through the exhaust system in such a manner that the gas is not exhausted from the processing space or is exhausted at a first flow rate from the processing space at the time of the first processing and the gas is exhausted at a second flow rate higher than the first flow rate from the processing space at the time of the second processing; and the exhaust apparatus is commonly used by the plurality of substrate processing apparatuses, the processing control section controls the operation of the plurality of substrate processing apparatuses in such a manner that the second processing is not simultaneously performed on a plurality of substrates in the plurality of substrate processing apparatuses, the first processing is a cleaning using a cleaning liquid on a substrate held by the first substrate holding section without rotating it, the second processing is a cleaning using a cleaning liquid on a substrate held by the second substrate holding section while rotating it.

9. A substrate cleaning method which cleans a substrate and includes the steps of: holding a substrate in a horizontal posture without rotating it in a processing space formed by a processing chamber using a first substrate holding section which abuts against a plurality of portions of the substrate; cleaning a substrate held by the first substrate holding section using a cleaning liquid; holding a substrate in a horizontal posture while rotating it around an axis in the vertical direction in the processing space using a second substrate holding section which adsorbs the substrate; cleaning a substrate held by the second substrate holding section using a cleaning liquid; when a substrate is held by the first substrate holding portion and the held substrate is cleaned using a cleaning liquid, adjusting the flow rate of the gas flowing through the exhaust system in a manner that the gas in the processing space is not exhausted or is exhausted to the outside of the processing chamber at a first flow rate by the exhaust apparatus provided outside the processing chamber through the exhaust system, and when a substrate is held by the second substrate holding portion and the held substrate is cleaned using a cleaning liquid, adjusting the flow rate of the gas flowing through the exhaust system in a manner that the gas in the processing space is exhausted to the outside of the processing chamber at a second flow rate higher than the first flow rate by the exhaust apparatus through the exhaust system.

10. The substrate cleaning method according to claim 9, further comprising the step of rotating the substrate in a manner that the cleaning liquid used for the cleaning is spun off from the substrate after cleaning the substrate held by the second substrate holding portion.

11. The substrate cleaning method according to claim 10, wherein the step of cleaning the substrate held by the second substrate holding portion using a cleaning liquid comprises rotating the substrate held by the second substrate holding portion at a first rotation speed during the cleaning, the step of rotating the substrate in a manner that the cleaning liquid is spun off from the substrate comprises rotating the substrate held by the second substrate holding portion at a second rotation speed higher than the first rotation speed when the cleaning liquid is spun off from the substrate, the substrate cleaning method further comprises the step of: adjusting the flow rate of the gas flowing through the exhaust system in a manner that the gas in the processing space is exhausted at a third flow rate higher than the second flow rate when the cleaning liquid is spun off from the substrate held by the second substrate holding portion.

12. The substrate cleaning method according to any one of claims 9 to 11, wherein a processing cup is provided in a manner that it surrounds the second substrate holding portion in plan view, the steps of adjusting the flow rate of the gas flowing through the exhaust system when a substrate is held by the first substrate holding portion and the held substrate is cleaned using a cleaning liquid, and adjusting the flow rate of the gas flowing through the exhaust system when a substrate is held by the second substrate holding portion and the held substrate is cleaned using a cleaning liquid comprise exhausting the gas in the processing space from the bottom of the processing cup.

13. The substrate cleaning method according to claim 12, further comprising the steps of: supporting the processing cup so that it moves in the vertical direction between a first height position at which the processing cup overlaps the substrate held by the second substrate holding portion in side view, and a second height position at which the processing cup is below the substrate held by the second substrate holding portion in side view, and the step of supporting the processing cup and moving it in the vertical direction comprises: supporting the processing cup at the first height position in a manner that it catches the cleaning liquid scattered from the substrate when a substrate is held by the second substrate holding portion, and supporting the processing cup at the second height position when a substrate is held by the first substrate holding portion.

14. A substrate cleaning method which cleans a plurality of substrates, and comprises: the step of controlling a plurality of substrate cleaning apparatuses, the step of controlling a plurality of substrate cleaning apparatuses, The plurality of substrate cleaning apparatuses each include: a processing chamber having a processing space capable of housing a substrate; a first substrate holding section that holds a substrate in a horizontal posture without rotating it by abutting against a plurality of portions of the substrate; a second substrate holding section that holds a substrate in a horizontal posture while rotating it around an axis in the vertical direction by adsorbing to the substrate; a cleaning section that cleans a substrate held by the first substrate holding section with a cleaning liquid in the processing space, and cleans a substrate held by the second substrate holding section with a cleaning liquid before or after cleaning a substrate held by the first substrate holding section; an exhaust system that connects the processing space and an exhaust device provided outside the processing chamber, and exhausts gas in the processing space by the exhaust device; and an exhaust amount adjustment section that adjusts the flow rate of gas flowing through the exhaust system. The exhaust device is commonly used by the plurality of substrate cleaning apparatuses. The step of controlling the plurality of substrate cleaning apparatuses includes: in each substrate cleaning apparatus, controlling the exhaust amount adjustment section of the substrate cleaning apparatus in such a manner that, when a substrate is held by the first substrate holding section and the held substrate is cleaned with a cleaning liquid, gas in the processing space is not exhausted or is exhausted at a first flow rate, and when a substrate is held by the second substrate holding section and the held substrate is cleaned with a cleaning liquid, gas in the processing space is exhausted at a second flow rate higher than the first flow rate; and controlling the operations of the plurality of substrate cleaning apparatuses in such a manner that no substrate is simultaneously held by the second substrate holding section in the plurality of substrate cleaning apparatuses.

15. A substrate cleaning method that cleans a plurality of substrates, and includes: a step of controlling a plurality of substrate cleaning apparatuses, the plurality of substrate cleaning apparatuses each include: a processing chamber having a processing space capable of housing a substrate; a first substrate holding section that holds a substrate in a horizontal posture without rotating it by abutting against a plurality of portions of the substrate; a second substrate holding section that holds a substrate in a horizontal posture while rotating it around an axis in the vertical direction by adsorbing to the substrate; a cleaning section that cleans a substrate held by the first substrate holding section with a cleaning liquid in the processing space, and cleans a substrate held by the second substrate holding section with a cleaning liquid before or after cleaning a substrate held by the first substrate holding section; an exhaust system that connects the processing space and an exhaust device provided outside the processing chamber, and exhausts gas in the processing space by the exhaust device; and an exhaust amount adjustment section that adjusts the flow rate of gas flowing through the exhaust system. the second substrate holding section rotates a substrate after cleaning a substrate held by the second substrate holding section in such a manner that the cleaning liquid used for the cleaning is spun off from the substrate; the exhaust device is commonly used by the plurality of substrate cleaning apparatuses. the step of controlling the plurality of substrate cleaning apparatuses includes: in each substrate cleaning apparatus, controlling the exhaust amount adjustment section of the substrate cleaning apparatus in such a manner that, when a substrate is held by the first substrate holding section and the held substrate is cleaned with a cleaning liquid, gas in the processing space is not exhausted or is exhausted at a first flow rate, and when a substrate is held by the second substrate holding section and the held substrate is cleaned with a cleaning liquid, gas in the processing space is exhausted at a second flow rate higher than the first flow rate; and controlling the operations of the plurality of substrate cleaning apparatuses in such a manner that no substrate is simultaneously held by the second substrate holding section in the plurality of substrate cleaning apparatuses. In each substrate cleaning apparatus, the exhaust amount adjusting section of the substrate cleaning apparatus is controlled in such a manner that, when a substrate is held by the first substrate holding section and the held substrate is cleaned using a cleaning liquid, no gas is exhausted from the processing space or gas is exhausted from the processing space at a first flow rate, and when a substrate is held by the second substrate holding section and the held substrate is cleaned using a cleaning liquid, gas is exhausted from the processing space at a second flow rate higher than the first flow rate. In each substrate cleaning apparatus, the exhaust amount adjusting section of the substrate cleaning apparatus is controlled in such a manner that, when the cleaning liquid of a substrate is spun off by the second substrate holding section, gas is exhausted from the processing space at a third flow rate higher than the second flow rate. And The operations of the plurality of substrate cleaning apparatuses are controlled in such a manner that the spinning off of the cleaning liquid of a substrate is not performed simultaneously in the plurality of substrate cleaning apparatuses.

16. A substrate processing method which performs a specific processing on a plurality of substrates and includes: a step of controlling a plurality of substrate processing apparatuses, each of the plurality of substrate processing apparatuses includes: a processing chamber having a processing space in which a substrate can be accommodated; a first substrate holding section which holds a substrate in a horizontal posture without rotating it by abutting against a plurality of portions of the substrate; a second substrate holding section which holds a substrate in a horizontal posture while rotating it around an axis in the vertical direction by adsorbing to the substrate; a processing section which performs a first processing on a substrate in the processing space and performs a second processing on the substrate before or after the first processing; an exhaust system which connects the processing space and an exhaust device provided outside the processing chamber and exhausts gas from the processing space by the exhaust device; and an exhaust amount adjusting section which adjusts the flow rate of gas flowing through the exhaust system; and the exhaust device is commonly used by the plurality of substrate processing apparatuses, the step of controlling the plurality of substrate processing apparatuses includes: in each substrate processing apparatus, the exhaust amount adjusting section of the substrate processing apparatus is controlled in such a manner that, when the first processing is performed, no gas is exhausted from the processing space or gas is exhausted from the processing space at a first flow rate, and when the second processing is performed, gas is exhausted from the processing space at a second flow rate higher than the first flow rate; And the operations of the plurality of substrate processing apparatuses are controlled in such a manner that the second processing is not performed simultaneously on a plurality of substrates in the plurality of substrate processing apparatuses, the first processing is cleaning of a substrate held by the first substrate holding section using a cleaning liquid without rotating it, the second processing is cleaning of a substrate held by the second substrate holding section using a cleaning liquid while rotating it.

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