A chemical mechanical polishing method
By fitting the function of the grinding liquid flow and rate of the calibrated wafer, the grinding time is dynamically controlled, which solves the problem of difficult control of the polishing end point in chemical mechanical polishing equipment, and accurately controls the removal amount of the wafer surface film.
Patent Information
- Application Number
- CN202211391369.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-11-08
- Publication Date
- 2025-08-05
- Estimated Expiration
- 2042-11-08
AI Technical Summary
During grinding, existing chemical mechanical polishing equipment cannot accurately control the polishing end point, resulting in insufficient or excessive polishing of the wafer surface film and the inability to accurately control the film removal amount.
By grinding multiple calibrated wafers, the actual grinding amount and average grinding liquid flow are obtained, the functional relationship between grinding liquid flow and rate are fitted, the grinding time is dynamically controlled, and the polishing end point is determined based on the film thickness removal amount or grinding liquid flow integration.
Accurate control of the removal amount of film on the wafer surface is achieved, the problems of insufficient or excessive grinding are solved, and the accuracy of polishing end points is improved.
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Figure CN115648055B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, in particular to a chemical mechanical polishing method. Background Art
[0002] Chemical mechanical polishing (CMP) equipment uses abrasive fluid and mechanical polishing to globally planarize semiconductor wafers. With the advancement of integrated circuit manufacturing technology, CMP equipment needs to be able to control the amount of thin film removed from the wafer surface. During polishing, the polishing head holds the wafer in place and applies downward pressure, ensuring full contact between the wafer and the polishing pad. Simultaneously, abrasive fluid is injected between the wafer and the polishing pad, removing the thin film from the wafer surface and flattening the wafer through a combined action of corrosion and abrasion.
[0003] Existing chemical mechanical polishing equipment typically pre-sets fixed process parameters, such as slurry flow rate and polishing time, based on experience during planarization. These empirically determined process parameters fail to account for variations in equipment and wafer conditions during operation. These variations in equipment conditions can cause instability in the slurry flow rate, resulting in discrepancies between the actual slurry flow rate and the set value. This can easily lead to under-polishing or over-polishing of thin films on the wafer surface, making it impossible to precisely control the polishing endpoint. Summary of the Invention
[0004] The present invention provides a chemical mechanical polishing method to overcome the problem in the prior art that the polishing endpoint cannot be accurately controlled.
[0005] The present invention provides a chemical mechanical polishing method, comprising: providing a first calibration wafer to an Nth calibration wafer; N is an integer greater than or equal to 2; setting a first grinding preset flow rate to an Nth grinding preset flow rate, and a first grinding time to an Nth grinding time; grinding the first calibration wafer to the Nth calibration wafer, and grinding the wafers according to the nth grinding preset flow rate and the nth grinding time T. n Grind the nth calibration wafer, where n is an integer greater than or equal to 1 and less than or equal to N; obtain the actual grinding amount Th before and after grinding any nth calibration wafer n ; Get the average polishing rate R of any nth calibration wafer n ; Get the average polishing liquid flow F of any nth calibration wafer n ; fitting the functional relationship between the polishing liquid flow rate F and the polishing rate R according to the corresponding data of the average polishing rate and the average polishing liquid flow rate of the first calibration wafer to the corresponding data of the average polishing rate and the average polishing liquid flow rate of the Nth calibration wafer; ; α and β are coefficients; the test wafer is polished, the test wafer has a preset polishing liquid flow rate F0 and polishing time T0; the first sampling period C1 to the Wth sampling period C(W) are set within the polishing time T0; ; During the polishing of the test wafer, obtain the average polishing liquid flow rate F(1) in the first sampling period C(1) to the average polishing liquid flow rate F(W) in the Wth sampling period C(W); obtain the film thickness removal amount RA(w) in any wth sampling period, , w is an integer greater than or equal to 1 and less than or equal to W; obtain the total film thickness removal at the end of any w-th sampling period , i is an integer greater than or equal to 1 and less than or equal to w; according to the total removal amount of film thickness Determine the grinding end point; or, obtain the grinding liquid flow integral SS(w) within any w-th sampling period, ; Get the total integral of the grinding fluid flow at the end of any w-th sampling period ; Determine the grinding end point based on the total integral of the grinding fluid flow rate.
[0006] Optionally, during the polishing of the nth calibration wafer, the first sampling of the nth calibration wafer to the kth sampling of the nth calibration wafer are performed at different times, and the actual flow rate F of the kth polishing liquid is obtained in the kth sampling of the nth calibration wafer. nk ; K is an integer greater than or equal to 2; k is an integer greater than or equal to 1 and less than or equal to K; ; .
[0007] Optional, total removal based on film thickness The steps for determining the polishing end point include: if the total film thickness removed is If the amount of grinding removal is greater than or equal to the preset grinding removal amount R0, it is determined that the grinding end point has been reached.
[0008] Optionally, the step of determining the polishing endpoint according to the total integral of the polishing liquid flow rate includes: if the total integral of the polishing liquid flow rate is greater than a preset polishing liquid flow integral S0, determining that the polishing endpoint is reached; .
[0009] Optionally, the diameters of the first calibration wafer to the Nth calibration wafer are consistent; the grinding pressure for grinding the first calibration wafer to the Nth calibration wafer is consistent, and the material of the grinding liquid used is consistent; the working parameters of the grinding heads used for the first calibration wafer to the Nth calibration wafer are consistent, the rotation speed of the grinding table used is consistent, and the working parameters of the dresser used are correspondingly consistent.
[0010] Optionally, the diameter of the test wafer and each calibration wafer is consistent, the grinding pressure is consistent, the material of the grinding liquid is consistent, the working parameters of the grinding head are consistent, the rotation speed of the grinding table is consistent, and the working parameters of the dresser are consistent.
[0011] Optional, α is 0.01~1.
[0012] Optional, β is 0.01~1.
[0013] Optionally, the method for fitting the functional relationship between the polishing liquid flow rate F and the polishing rate R includes a least squares method.
[0014] The technical solution of the present invention has the following beneficial effects:
[0015] The chemical mechanical polishing method provided by the technical solution of the present invention dynamically controls the polishing time according to the flow rate of the polishing liquid, solves the problem of insufficient or excessive polishing caused by the actual flow rate difference of the polishing liquid during the operation of the equipment, and achieves the purpose of accurately controlling the amount of thin film removed from the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0017] Figure 1 A flow chart of a chemical mechanical polishing method. DETAILED DESCRIPTION
[0018] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.
[0019] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0020] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; internal connections between two components; wireless connections or wired connections. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.
[0021] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.
[0022] An embodiment of the present invention provides a chemical mechanical polishing method, referring to Figure 1 , including the following steps:
[0023] Step S1: providing a first calibration wafer to an Nth calibration wafer; N is an integer greater than or equal to 2;
[0024] Step S2: Set the first grinding preset flow rate to the Nth grinding preset flow rate and the first grinding time to the Nth grinding time; grind the first calibration wafer to the Nth calibration wafer according to the nth grinding preset flow rate and the nth grinding time T n grinding the nth calibration wafer, where n is an integer greater than or equal to 1 and less than or equal to N;
[0025] Step S3: Obtain the actual grinding amount Th before and after grinding of any nth calibration wafer n ;
[0026] Step S4: Obtain the average polishing rate R of any nth calibration wafer n ;
[0027] Step S5: Obtain the average polishing liquid flow rate F of any nth calibration wafer n ;
[0028] Step S6: fitting a functional relationship between the polishing liquid flow rate F and the polishing rate R based on the corresponding data of the average polishing rate and the average polishing liquid flow rate of the first calibration wafer to the corresponding data of the average polishing rate and the average polishing liquid flow rate of the Nth calibration wafer, ;α and β are coefficients;
[0029] Step S7: grinding the test wafer, the test wafer has a preset grinding liquid flow rate F0 and grinding time T0; setting the first sampling period C1 to the W-th sampling period C (W) within the grinding time T0; ;
[0030] Step S8: During the polishing of the test wafer, the average polishing liquid flow rate F(1) within the first sampling period C(1) to the average polishing liquid flow rate F(W) within the Wth sampling period C(W) are obtained;
[0031] Step S9: Obtain the film thickness removal amount RA(w) in any w-th sampling period, , w is an integer greater than or equal to 1 and less than or equal to W; obtain the total film thickness removal at the end of any w-th sampling period , i is an integer greater than or equal to 1 and less than or equal to w; according to the total removal amount of film thickness Determine the grinding end point;
[0032] Alternatively, obtain the grinding liquid flow integral SS(w) within any w-th sampling period, ; Get the total integral of the grinding fluid flow at the end of any w-th sampling period ; Determine the grinding end point based on the total integral of the grinding fluid flow rate.
[0033] In this embodiment, the grinding time is dynamically controlled according to the grinding liquid flow rate to solve the problem of insufficient grinding or excessive grinding caused by the actual grinding liquid flow rate difference during the operation of the equipment, so as to achieve the purpose of accurately controlling the amount of thin film removed from the wafer surface.
[0034] In step S1, the diameters of the first calibration wafer to the Nth calibration wafer are consistent; the grinding pressure and the material of the grinding slurry used for grinding the first calibration wafer to the Nth calibration wafer are consistent; the operating parameters of the grinding head used for the first calibration wafer to the Nth calibration wafer are consistent, and the rotation speed of the grinding table used is consistent. During the grinding of the first calibration wafer to the Nth calibration wafer, the operating parameters of the dresser used are consistent. The consistent operating parameters of the grinding head include the consistent rotation speed of the grinding head and the consistent scanning path of the grinding head.
[0035] In step S2, the first through Nth preset grinding flow rates are different. The first through Nth grinding times can be identical, partially identical, or completely different. The first through Nth calibration wafers are all polished, either sequentially or simultaneously, without limitation.
[0036] In step S3, the film thickness value before grinding the nth calibration wafer is tested. , after grinding the nth calibration wafer, the film thickness is tested. ; The actual grinding amount before and after grinding of the nth calibration wafer .
[0037] In step S4 and step S5, during the grinding process of the nth calibration wafer, the first sampling of the nth calibration wafer to the kth sampling of the nth calibration wafer are performed at different times, and the actual flow rate F of the kth grinding liquid is obtained in the kth sampling of the nth calibration wafer. nk ; K is an integer greater than or equal to 2; k is an integer greater than or equal to 1 and less than or equal to K; ; .
[0038] In step S6, the corresponding data of the average polishing rate and the average polishing slurry flow rate of the first calibration wafer is one data point, the corresponding data of the average polishing rate and the average polishing slurry flow rate of the Nth calibration wafer is one data point, and the corresponding data of the average polishing rate and the average polishing slurry flow rate of the nth calibration wafer is one data point. The data points from the first calibration wafer to the Nth calibration wafer are a total of N data points; the functional relationship between the polishing slurry flow rate F and the polishing rate R is fitted using these N data points. The method for fitting the functional relationship between the polishing slurry flow rate F and the polishing rate R using these N data points includes a least squares method.
[0039] In one embodiment, α is 0.01 to 1, such as 0.01, 0.02, 0.03, 0.04, 0.05, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1. β is 0.01 to 1, such as 0.01, 0.02, 0.03, 0.04, 0.05, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1.
[0040] In step S7, the test wafer and each calibration wafer have the same diameter, the same grinding pressure, the same grinding slurry material, the same grinding head operating parameters, the same grinding table rotation speed, and the same dresser operating parameters. The same grinding head operating parameters include the same grinding head rotation speed and the same scanning path.
[0041] In step S8 , the durations of the first sampling period C1 to the Wth sampling period C(W) are all the same.
[0042] In step S8, the total removal amount of the film thickness is The steps for determining the polishing end point include: if the total film thickness removed is If the amount of grinding removal is greater than or equal to the preset grinding removal amount R0, it is determined that the grinding end point has been reached.
[0043] In step S8, the step of determining the polishing end point according to the total integral of the polishing liquid flow rate includes: if the total integral of the polishing liquid flow rate is greater than the preset polishing liquid flow integral S0, then determining that the polishing end point has been reached; .
[0044] The following description takes N=5 as an example.
[0045] Provide a first calibration wafer, a second calibration wafer, a third calibration wafer, a fourth calibration wafer and a fifth calibration wafer; set a first grinding preset flow rate and a first grinding time T1 for the first calibration wafer, set a second grinding preset flow rate and a second grinding time T2 for the second calibration wafer, set a third grinding preset flow rate and a third grinding time T3 for the third calibration wafer, set a fourth grinding preset flow rate and a fourth grinding time T4 for the fourth calibration wafer, and set a fifth grinding preset flow rate and a fifth grinding time T5 for the fifth calibration wafer.
[0046] Measure a first film thickness value before grinding a first calibration wafer, and obtain a first film thickness value after grinding the first calibration wafer; obtain an actual grinding amount Th1 before and after grinding the first calibration wafer according to the difference between the first film thickness value and the first film thickness value; measure a second film thickness value before grinding a second calibration wafer, and obtain a second film thickness value after grinding the second calibration wafer; obtain an actual grinding amount Th2 before and after grinding the second calibration wafer according to the difference between the second film thickness value and the second film thickness value; measure a third film thickness value before grinding a third calibration wafer, and obtain a third film thickness value after grinding the third calibration wafer; Obtain the actual grinding amount Th3 of the third calibrated wafer before and after grinding according to the difference between the third film thickness before value and the third film thickness after value; measure the fourth film thickness before value before grinding of the fourth calibrated wafer, and obtain the fourth film thickness after value after grinding of the fourth calibrated wafer; obtain the actual grinding amount Th4 of the fourth calibrated wafer before and after grinding according to the difference between the fourth film thickness before value and the fourth film thickness after value; measure the fifth film thickness before value before grinding of the fifth calibrated wafer, and obtain the fifth film thickness after value after grinding of the fifth calibrated wafer; obtain the actual grinding amount Th5 of the fifth calibrated wafer before and after grinding according to the difference between the fifth film thickness before value and the fifth film thickness after value.
[0047] During the grinding process of the nth calibration wafer, the first sampling to the Kth sampling of the nth calibration wafer are performed at different times. The following is explained with K equal to 3 as an example.
[0048] During the grinding process of the first calibration wafer, the first sampling, the second sampling and the third sampling of the first calibration wafer are performed at different times, and the actual flow rate F of the first grinding liquid is obtained in the first sampling of the first calibration wafer. 11 , obtain the actual flow rate F of the second polishing liquid in the second sampling of the first calibration wafer 12 , obtain the actual flow rate F of the third polishing liquid in the third sampling of the first calibration wafer 13 , the average polishing rate of the first calibration wafer , the average polishing liquid flow rate of the first calibration wafer .
[0049] During the grinding process of the second calibration wafer, the first sampling of the second calibration wafer, the second sampling of the second calibration wafer, and the third sampling of the second calibration wafer are performed at different times. The actual flow rate F of the first grinding liquid is obtained in the first sampling of the second calibration wafer. 21 , obtain the actual flow rate F of the second polishing liquid in the second sampling of the second calibration wafer 22 , obtain the actual flow rate F of the third polishing liquid in the third sampling of the second calibration wafer 23 , the average polishing rate of the second calibration wafer , the average polishing liquid flow rate of the second calibration wafer .
[0050] During the grinding process of the third calibration wafer, the first sampling of the third calibration wafer, the second sampling of the third calibration wafer and the third sampling of the third calibration wafer are performed at different times, and the actual flow rate F of the first grinding liquid is obtained in the first sampling of the third calibration wafer. 31 , obtain the actual flow rate F of the second polishing liquid in the second sampling of the third calibration wafer 32 , obtain the actual flow rate F of the third polishing liquid in the third sampling of the third calibration wafer 33 , the average polishing rate of the third calibration wafer , the average polishing liquid flow rate of the third calibration wafer .
[0051] During the grinding process of the fourth calibration wafer, the first sampling of the fourth calibration wafer, the second sampling of the fourth calibration wafer and the third sampling of the fourth calibration wafer are performed at different times, and the actual flow rate F of the first grinding liquid is obtained in the first sampling of the fourth calibration wafer. 41 , obtain the actual flow rate F of the second polishing liquid in the second sampling of the fourth calibration wafer 42 , obtain the actual flow rate F of the third polishing liquid in the third sampling of the fourth calibration wafer 43 , the average polishing rate of the fourth calibration wafer , the average polishing liquid flow rate of the fourth calibration wafer .
[0052] During the grinding process of the fifth calibration wafer, the first sampling of the fifth calibration wafer, the second sampling of the fifth calibration wafer and the third sampling of the fifth calibration wafer are performed at different times, and the actual flow rate F of the first grinding liquid is obtained in the first sampling of the fifth calibration wafer. 51 , obtain the actual flow rate F of the second polishing liquid in the second sampling of the fifth calibration wafer 52 , obtain the actual flow rate F of the third polishing liquid in the third sampling of the fifth calibration wafer 53 , the average polishing rate of the fifth calibration wafer , the average polishing liquid flow rate of the fifth calibration wafer .
[0053] Fit the functional relationship between the grinding liquid flow rate F and the grinding rate R according to (R1, F1), (R2, F2), (R3, F3), (R4, F4) and (R5, F5); ; α and β are coefficients.
[0054] The test wafer is ground, the test wafer has a preset grinding liquid flow rate F0 and grinding time T0; the first sampling period C1 to the W-th sampling period C (W) is set within the grinding time T0; ; The following explanation is made using the example of W being 4.
[0055] A first sampling period C(1), a second sampling period C(2), a third sampling period C(3), and a fourth sampling period C(4) are set within the grinding time T0. The average grinding liquid flow rate F(1) within the first sampling period C(1) is obtained, the average grinding liquid flow rate F(2) within the second sampling period C(2) is obtained, the average grinding liquid flow rate F(3) within the third sampling period C(3) is obtained, and the average grinding liquid flow rate F(4) within the fourth sampling period C(4) is obtained.
[0056] Obtain the film thickness removal amount RA(1) in the first sampling period, ; Obtain the film thickness removal amount RA(2) in the second sampling period, ; Obtain the film thickness removal amount RA(3) in the third sampling period, ; Obtain the film thickness removal amount RA(4) within the fourth sampling period, ; Get the total film thickness removal at the end of any w-th sampling period ; Total removal amount based on film thickness Determine the polishing end point; for example, the total film thickness removal at the end of the third sampling period When the grinding removal amount is greater than or equal to the preset grinding removal amount R0, it is determined that the grinding end point is reached at the end of the third sampling period. =RA(1)+RA(2)+RA(3).
[0057] Get the grinding liquid flow integral SS(1) in the first sampling period, ; Get the grinding liquid flow integral SS(2) in the second sampling period, ; Get the grinding liquid flow integral SS(3) within the third sampling period, ; Get the grinding liquid flow integral SS (4) within the fourth sampling period, Get the total integral of the grinding fluid flow at the end of the first sampling period ; Get the total integral of the grinding fluid flow at the end of the second sampling period ; Get the total integral of the grinding fluid flow at the end of the third sampling period ; Get the total integral of the grinding fluid flow at the end of the fourth sampling period ; The grinding end point is determined based on the total integral of the grinding liquid flow rate. If the total integral of the grinding liquid flow rate is greater than the preset grinding liquid flow integral S0, it is determined that the grinding end point has been reached. For example, when the total integral of the grinding liquid flow rate at the end of the third sampling period is greater than the preset grinding liquid flow integral S0, it is determined that the grinding end point has been reached.
[0058] In one embodiment, the time interval between any one of the first sampling period to the Wth sampling period is 0.5 seconds to 3 seconds, for example, 1 second.
[0059] The present invention dynamically controls the grinding time according to the grinding liquid flow rate, solves the problem of insufficient grinding or excessive grinding caused by the actual grinding liquid flow rate difference during the operation of the equipment, and achieves the purpose of accurately controlling the amount of thin film removed from the wafer surface.
[0060] Obviously, the above embodiments are merely examples for clarity of explanation and are not intended to limit the implementation methods. Those skilled in the art will readily appreciate that other variations or modifications based on the above descriptions are possible. It is not necessary and impossible to enumerate all implementation methods here. Obvious variations or modifications arising therefrom remain within the scope of protection of the present invention.
Claims
1. A chemical mechanical polishing method, characterized in that: include: Providing a first calibration wafer to an Nth calibration wafer; N is an integer greater than or equal to 2; Set the first grinding preset flow rate to the Nth grinding preset flow rate and the first grinding time to the Nth grinding time; The first calibration wafer to the Nth calibration wafer are all ground according to the preset flow rate and the nth grinding time T n grinding the nth calibration wafer, where n is an integer greater than or equal to 1 and less than or equal to N; Get the actual grinding amount Th before and after grinding of any nth calibration wafer n ; Get the average polishing rate R of any nth calibration wafer n ; Get the average polishing fluid flow F of any nth calibration wafer n ; The functional relationship between the polishing liquid flow rate F and the polishing rate R is fitted based on the corresponding data of the average polishing rate and the average polishing liquid flow rate of the first calibration wafer to the corresponding data of the average polishing rate and the average polishing liquid flow rate of the Nth calibration wafer. ; α and β are coefficients; Grinding a test wafer, the test wafer having a preset grinding liquid flow rate F0 and a grinding time T0; setting a first sampling period C1 to a Wth sampling period C(W) within the grinding time T0; ; During the polishing of the test wafer, the average polishing liquid flow rate F(1) in the first sampling period C(1) to the average polishing liquid flow rate F(W) in the Wth sampling period C(W) are obtained; Get the film thickness removal amount RA(w) in any w-th sampling period, , w is an integer greater than or equal to 1 and less than or equal to W; obtain the total film thickness removal at the end of any w-th sampling period , i is an integer greater than or equal to 1 and less than or equal to w; according to the total removal amount of film thickness Determine the grinding end point; Alternatively, obtain the grinding liquid flow integral SS(w) within any w-th sampling period, ; Get the total integral of the grinding fluid flow at the end of any w-th sampling period ; The grinding end point is determined based on the total integral of the grinding fluid flow rate; During the polishing process of the nth calibration wafer, the first sampling of the nth calibration wafer to the Kth sampling of the nth calibration wafer are performed at different times, and the actual flow rate F of the kth polishing liquid is obtained in the kth sampling of the nth calibration wafer. nk ; K is an integer greater than or equal to 2; k is an integer greater than or equal to 1 and less than or equal to K; ； ； Total removal amount based on film thickness The steps for determining the polishing end point include: if the total film thickness removed is If the amount of grinding removal is greater than or equal to the preset amount R0, it is judged that the grinding end point has been reached; The step of determining the polishing endpoint according to the total integral of the polishing liquid flow rate includes: if the total integral of the polishing liquid flow rate is greater than a preset polishing liquid flow integral S0, determining that the polishing endpoint has been reached; .
2. The chemical mechanical polishing method according to claim 1, wherein The diameters of the first calibration wafer to the Nth calibration wafer are consistent; the grinding pressure for grinding the first calibration wafer to the Nth calibration wafer is consistent, and the material of the grinding liquid used is consistent; the working parameters of the grinding head used for the first calibration wafer to the Nth calibration wafer are consistent, the rotation speed of the grinding table used is consistent, and the working parameters of the dresser used are correspondingly consistent.
3. The chemical mechanical polishing method according to claim 1, wherein The diameter of the test wafer and each calibration wafer is consistent, the grinding pressure is consistent, the material of the grinding liquid is consistent, the working parameters of the grinding head are consistent, the rotation speed of the grinding table is consistent, and the working parameters of the dresser are consistent.
4. The chemical mechanical polishing method according to claim 1, wherein: α is 0.01~1.
5. The chemical mechanical polishing method according to claim 1, wherein β is 0.01~1.
6. The chemical mechanical polishing method according to claim 1, wherein: Methods for fitting the functional relationship between the polishing liquid flow rate F and the polishing rate R include the least squares method.
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