Device and manufacturing method thereof
Through the horizontal separation wiring process and mature wiring methods, the high cost and low yield problems of micro LED displays are solved, and the low-cost, high-yield manufacturing of large-screen displays and the repair of light-emitting components are realized.
Patent Information
- Application Number
- CN202080102028.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-06-28
- Publication Date
- 2025-10-03
- Estimated Expiration
- 2040-06-28
AI Technical Summary
Displays using micro-LEDs suffer from high assembly costs, low yields, and difficulty in manufacturing large screens, especially due to the limitations of multi-terminal bonding methods in terms of thickness differences and stress variations.
A laterally separated wiring process is adopted to form laterally separated light-emitting elements and metal wiring connections on the substrate, combined with the use of dielectric layers and adhesive layers to achieve reliable connection of the light-emitting elements, and improve the yield through testing and repair processes.
It reduces manufacturing costs, improves yield, is suitable for the manufacture of large-screen displays, supports the repair of light-emitting components, and improves production efficiency.
Smart Images
Figure CN115699320B_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to a device and a method for manufacturing the same, and more particularly to a display using micro-LEDs (Light Emitting Diodes) and a method for manufacturing the same. Background Art
[0002] In various applications such as mobile phones, automatic displays, AR (Augmented Reality), VR (Virtual Reality), monitors, TV (Television), large-screen displays, etc., high resolution, high brightness, wide viewing angle, low power consumption, etc. are required, and the demand for displays using micrometer-size LEDs (micro-LEDs) is increasing. Summary of the Invention
[0003]
Technical Issues
[0004] However, one of the issues with displays using micro-LEDs is the high assembly cost. Traditionally, LEDs are connected individually using bonding processes such as wire bonding and flip-chip bonding, resulting in high manufacturing costs. Consequently, as the number of pixels increases, manufacturing costs rise. For example, in a 4K display, approximately 25,000,000 micro-LEDs are used. Even if the yield rate of micro-LEDs reaches 99.99%, approximately 2,500 micro-LEDs still need to be repaired.
[0005] Provided Figure 1 The multi-terminal bonding method shown is used as a method to reduce assembly costs. The multi-terminal bonding method applies pressure to the multiple micro LEDs 3 through the bonding head 4, allowing the multiple micro LEDs 3 to be bonded to the substrate 1 at one time through the solder 2. However, since the thickness of the multiple micro LEDs 3 may be different, a thickness variation absorption film 5 is required to offset the thickness difference. Even with the thickness variation absorption film 5, the thickness variation of the multiple micro LEDs 3 cannot be completely eliminated. Therefore, different stresses may be applied to the multiple micro LEDs 3. In particular, since the red-emitting micro LED 3 can be made of fragile GaAs (gallium arsenide), it is easily damaged by excessive stress. Therefore, the yield of devices produced using the multi-terminal bonding method is low.
[0006] Furthermore, the larger the device area, the greater the variation in stress applied to the device. Furthermore, due to the limited size of the bonding head 4, the multi-terminal bonding method can only achieve a small area of precise bonding at one time. Therefore, the multi-terminal bonding method is difficult to manufacture for large-screen displays.
[0007] In addition, manufacturers need to verify that the micro-LEDs in the device are functioning properly during or after the manufacturing process. However, it is difficult to repair micro-LEDs embedded in the device.
[0008] Therefore, a display and a manufacturing method with low manufacturing cost and high yield are needed.
[0009] [Technical solution to the problem]
[0010] A first aspect of the present disclosure is a device comprising:
[0011] substrate;
[0012] a first electrode on the substrate;
[0013] A light emitting element electrically connected to the first electrode via a first metal wiring; and
[0014] electrically connected to the second electrode of the light emitting element,
[0015] wherein the first electrode and the light emitting element are laterally separated from each other, and
[0016] The light emitting element is connected to the first metal wiring on a side facing the substrate.
[0017] In the above aspect of the present disclosure, the device further includes a first dielectric layer comprising the light emitting element, wherein the thickness of the first dielectric layer is greater than or equal to the thickness of the light emitting element.
[0018] In the above aspect of the present disclosure, the first electrode may include a pad on the substrate, a first contact metal electrically connected to the pad, and wherein the first metal wiring may be electrically connected to the first contact metal.
[0019] In the above aspect of the present disclosure, the device may further include an adhesive layer on the substrate, wherein a thickness of the pad may be less than or equal to a thickness of the adhesive layer.
[0020] In the above aspect of the present disclosure, the device may further include a second dielectric layer on the first electrode, wherein at least one of the first dielectric layer and the second dielectric layer may be made of a photosensitive transparent resin.
[0021] In the above aspect of the present disclosure, the device may include a plurality of the light emitting elements having different thicknesses.
[0022] In the above aspect of the present disclosure, the light emitting element may be a vertical micro LED.
[0023] In the above aspects of the present disclosure, the device further comprises:
[0024] a third electrode on the substrate;
[0025] a repaired light-emitting element electrically coupled to the third electrode; and
[0026] a fourth electrode electrically connected to the repaired light-emitting element,
[0027] The repairing light-emitting element may cover at least a portion of the third electrode.
[0028] In the above aspect of the present disclosure, the second electrode and the fourth electrode may be a common electrode.
[0029] In the above aspect of the present disclosure, the second electrode and the fourth electrode may be transparent electrodes.
[0030] A second aspect of the present disclosure is a method for manufacturing a device, comprising:
[0031] a step of arranging a light-emitting element on a carrier;
[0032] forming a first dielectric layer on the carrier to expose the light-emitting element;
[0033] forming metal wiring on the light emitting element and the first dielectric layer;
[0034] forming an adhesive layer on the substrate having the pad;
[0035] the step of bonding the carrier to the substrate,
[0036] wherein the metal wiring on the carrier faces the pad and the adhesive layer on the substrate, and
[0037] wherein the light emitting element and the pad are laterally separated from each other;
[0038] a step of removing the carrier;
[0039] etching the first dielectric layer and the adhesive layer down to the pad to form an opening;
[0040] depositing a contact metal on the opening to electrically connect the pad and the metal wiring to each other;
[0041] forming a second dielectric layer at least on the first dielectric layer to expose the light emitting element; and
[0042] forming electrodes on the light-emitting element.
[0043] In the above aspect of the present disclosure, the light emitting element may be a vertical micro LED.
[0044] In the above aspect of the present disclosure, the thickness of the first dielectric layer may be greater than or equal to the thickness of the light emitting element.
[0045] In the above aspect of the present disclosure, the light emitting element may include a plurality of light emitting elements having different thicknesses.
[0046] In the above aspect of the present disclosure, the thickness of the pad may be less than or equal to the thickness of the adhesive layer.
[0047] In the above aspect of the present disclosure, the step of arranging the light-emitting element on the carrier may include the step of transferring the light-emitting element provided on the spare substrate to a spare carrier, and the step of transferring the light-emitting element transferred to the spare carrier to the carrier.
[0048] In the above aspects of the present disclosure, the electrode may be a common electrode.
[0049] In the above aspects of the present disclosure, the electrode may be a transparent electrode.
[0050] In the above aspect of the present disclosure, at least one of the first dielectric layer and the second dielectric layer is made of a photosensitive transparent resin.
[0051] In the above aspects of the present disclosure, the method may include:
[0052] Before the step of forming the second dielectric layer, a step of testing the operation of the light emitting element;
[0053] If the light emitting element does not operate, cutting off the metal wiring connected to the non-operating light emitting element; and
[0054] a step of arranging a repaired light emitting element on the contact metal connected to the severed metal wiring.
[0055] In the above aspect of the present disclosure, the step of testing the operation of the light emitting element may include the step of electrically connecting a test carrier having a conductive layer to the light emitting element.
[0056] In the above aspect of the present disclosure, the step of arranging the repair light emitting element on the contact metal includes the step of bonding using solder.
[0057] In the above aspects of the present disclosure, the step of forming a second dielectric layer at least on the first dielectric layer may include the step of forming the second dielectric layer on the opening to expose the repaired light-emitting element, and the step of forming an electrode on the light-emitting element includes the step of forming the electrode on the repaired light-emitting element.
[0058] [Beneficial Effects of the Invention]
[0059] Since the present disclosure uses a wiring process which is a mature technology, a display and a manufacturing method with low manufacturing cost and high yield can be provided. BRIEF DESCRIPTION OF THE DRAWINGS
[0060] Figure 1 A conventional multi-terminal bonding method is shown.
[0061] Figure 2 A device according to the present disclosure is shown.
[0062] Figure 3 The step of transferring the light-emitting element arranged on the spare substrate to a spare carrier is shown.
[0063] Figure 4 The step of transferring the light emitting element transferred to the spare carrier to the carrier is shown.
[0064] Figure 5 The steps of forming a first dielectric layer on the carrier to expose the light emitting element and forming metal wiring on the light emitting element and the first dielectric layer are shown.
[0065] Figure 6 The step of bonding the carrier to the substrate is shown.
[0066] Figure 7 The step of removing the carrier is shown.
[0067] Figure 8 The step of forming an opening by etching the first dielectric layer and the adhesion layer down to the pad is shown.
[0068] Figure 9 The step of depositing contact metal in the opening to electrically connect the pad and the metal wiring is shown.
[0069] Figure 10 The steps for testing the operation of the light emitting element are shown.
[0070] Figure 11 The step of cutting off the metal wiring connected to the non-operating light-emitting element if the light-emitting element does not operate is shown.
[0071] Figure 12 A step of arranging a repaired light-emitting element on a contact metal connected to the severed metal wiring is shown.
[0072] Figure 13 The step of forming a second dielectric layer at least on the first dielectric layer to expose the light emitting element is shown.
[0073] Figure 14 The step of forming an electrode on a light-emitting element is shown. DETAILED DESCRIPTION
[0074] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Although the following detailed description describes a display using micro-LEDs, the present disclosure can be applied to edge-emitting lasers, optical communication devices using VCSELs (Vertical-Resonant Surface-Emitting Lasers), ToF modules (image sensors), laser printers, and the like.
[0075] Figure 2 A device 100 according to the present disclosure is shown.
[0076] The device 100 of the present disclosure may include a substrate 10; a first electrode 20 including a pad 22 on the substrate 10 and a contact metal 24 electrically connected to the pad 22; an adhesion layer 26; a first dielectric layer 36; a light-emitting element 30 having an upper electrode 34 on a side opposite the substrate 10 and a lower electrode 32 on a side facing the substrate 10; a metal wiring 28 electrically connected to the contact metal 24 at one end and to the lower electrode 32 of the light-emitting element 30 at the other end; a second dielectric layer 40; and a second electrode 42 electrically connected to the upper electrode 34 of the light-emitting element 30. The metal wiring 28 electrically connects the first electrode 20 and the light-emitting element 30. The metal wiring 28 extends laterally from the contact metal 24 to the light-emitting element 30. Furthermore, the first electrode 20 and the light-emitting element 30 are laterally separated from each other. Herein, the term "laterally" refers to a direction parallel to the surface of the substrate 10. For example, laterally separating multiple components means that the components do not overlap in a top view. Laterally separated multiple components do not restrict each component to existing in the same plane.
[0077] The device 100 of the present disclosure is manufactured using a mature wiring method rather than a high-voltage bonding method. Therefore, compared with a process using bonding that easily damages the light-emitting element 30, the yield of the manufactured device is improved, and the manufacture of large devices is facilitated.
[0078] Furthermore, the device 100 of the present disclosure may further include a repair light emitting element 50 . The repair light emitting element 50 is electrically connected to the contact metal 24 through its lower electrode 52 and solder 56 , and may be electrically connected to the second electrode 42 via its upper electrode 54 .
[0079] In addition, the device 100 of the present disclosure may include an abnormally functioning NG light-emitting element 60. The NG light-emitting element 60 may be electrically connected to the cut metal wiring 58 at its lower electrode 62, and may be electrically connected to the second electrode 42 at its upper electrode 64. Because the metal wiring is cut, no voltage is applied to the NG light-emitting element 60 between the first electrode 20 and the second electrode 42.
[0080] A method of manufacturing the device 100 of the present disclosure will be described.
[0081] Figure 3 The figure shows the step of transferring a light-emitting element 30 disposed on a spare substrate 12 to a spare carrier 14. The spare carrier 14 may have a first adhesive 13. The spare substrate 12 is brought close to the spare carrier 14 so that the light-emitting element 30 on the spare substrate 12 comes into contact with the first adhesive 13 on the spare carrier 14. The light-emitting element 30 is then removed from the spare substrate 12 by laser lift-off (LLO), for example using a laser 15, and transferred to the spare carrier 14.
[0082] The spare substrate 12 may be a substrate commonly used in the art, for example, a sapphire substrate, a gallium nitride substrate, or the like.
[0083] The light emitting element 30 may be a plurality of light emitting elements, such as a red light emitting element, a green light emitting element, and a blue light emitting element. The plurality of light emitting elements may have different thicknesses. Since the device 100 of the present disclosure may include light emitting elements with different thicknesses, a multi-color display may be provided.
[0084] The light-emitting element 30 may be a light-emitting diode (LED). The LED may be a micro-LED. A micro-LED refers to an LED having a footprint of less than approximately 50 μm × 50 μm, preferably less than 20 μm × 20 μm or less, and more preferably less than approximately 10 μm × 10 μm. The micro-LED may be a vertical micro-LED. A vertical micro-LED refers to an LED having an upper electrode 34 and a lower electrode 32. Because a vertical micro-LED with electrodes in a vertical direction can occupy a smaller area, a higher pixel per inch (PPI) can be achieved.
[0085] At least one electrode of a vertical micro-LED faces substrate 10. Therefore, in conventional technology, the substrate-facing electrode is electrically connected to a pad on the substrate using a bonding method such as solder. This bonding method is difficult to accurately connect the micro-LED and substrate in one go. In contrast, the metal wiring 28 of the present invention, which uses a wiring method, can electrically connect the micro-LED 30 and the pad 22.
[0086] The first adhesive 13 may be any adhesive commonly used in the art. For example, the first adhesive 13 may be a thermosetting adhesive, such as an epoxy resin, acrylic acid, or silicone resin-based adhesive, or a UV (Ultraviolet) curing adhesive.
[0087] The pad 22 may be a commonly used pad in the art, for example, titanium, nickel, chromium, gold, copper or an alloy thereof.
[0088] The laser 15 can be a laser commonly used in the art. For example, the laser 15 can be a UV laser emitting a wavelength of 200-400 nm, a laser emitting green light, or a near-infrared laser emitting a wavelength of 800-1000 nm.
[0089] Figure 4 The step of transferring the light-emitting element 30 transferred to the spare carrier 14 to the carrier 18 is shown. The carrier 18 may have a second adhesive 17. The spare carrier 14 is brought close to the carrier 18, so that the light-emitting element 30 on the spare carrier 14 is in contact with the second adhesive 17 on the carrier 18. Then, for example, by utilizing the difference in adhesion between the first adhesive 13 on the spare carrier 14 and the second adhesive 17 on the carrier 18, the light-emitting element 30 is removed from the spare carrier 14 and transferred to the carrier 18. In this case, the adhesion of the second adhesive 17 to the carrier 18 is greater than the adhesion of the first adhesive 13 to the spare carrier 14.
[0090] like Figure 4 As shown in the top view at the lower right, a plurality of light emitting elements 30 can be accurately placed at predetermined positions on the carrier 18 .
[0091] The carrier 18 can be a carrier commonly used in the art. For example, the carrier 18 can be a carrier made of quartz or glass. The spare carrier 14 and the carrier 18 can be made of the same material or different materials.
[0092] The second adhesive 17 can be any adhesive commonly used in the art. For example, the second adhesive 17 can be a thermosetting adhesive, such as an epoxy, acrylic, or silicone-based adhesive, or a UV-curable adhesive. The first adhesive 13 and the second adhesive 17 can be made of the same or different materials.
[0093] as follows Figures 5 to 14 , showing a top view of an embodiment of the present disclosure and cross-sectional views along lines AA', BB', and CC' in the top view.
[0094] Figure 5 The steps of forming a first dielectric layer 36 on carrier 18 to expose light-emitting element 30 and forming metal wiring 28 on light-emitting element 30 and first dielectric layer 36 are shown. As shown in the AA' cross section, first dielectric layer 36 is formed on carrier 18. First dielectric layer 36 includes light-emitting element 30. First dielectric layer 36 has a via hole in which electrode 32 of light-emitting element 30 is exposed. Subsequently, metal wiring 28 is formed on first dielectric layer 36 and in the via hole, with one end of metal wiring 28 electrically connected to light-emitting element 30.
[0095] Metal wiring 28 is formed by, for example, photolithography using photoresist. A metal layer is deposited on first dielectric layer 36 and in the vias, and photoresist is patterned on the metal layer. Thereafter, the metal layer is patterned by etching along the photoresist pattern. Thereafter, the photoresist is removed to form metal wiring 28.
[0096] First dielectric layer 36 may comprise a photosensitive material or a non-photosensitive material, such as a thermosetting material. Preferably, first dielectric layer 36 comprises a photosensitive material. More preferably, first dielectric layer 36 comprises a photosensitive resin. If first dielectric layer 36 comprises a photosensitive resin, vias can be easily formed by photolithography. Furthermore, device flexibility can be increased, enabling the production of larger devices.
[0097] The metal wiring 28 can be any conductive material including metal, and can be any conductive metal or conductive metal oxide. Preferably, the metal wiring 28 can be one or more selected from the group consisting of copper, nickel, titanium, chromium and indium tin oxide (ITO).
[0098] The thickness of the first dielectric layer 36 can be greater than or equal to the thickness of the light emitting element 30. Since a portion of the light emitting element 30 is covered by the first dielectric layer 36, the mechanical strength of the device is increased. Therefore, the device yield can be improved, and large-scale devices can be manufactured.
[0099] Thereafter, a substrate 10 having pads 22 is provided, and an adhesive layer 26 is formed on the substrate 10 .
[0100] Figure 6 The step of bonding carrier 18 to substrate 10 is shown. Metal wiring 28 on carrier 18 can face pads 22 and adhesive layer 26 on substrate 10. Metal wiring 28 can be precisely aligned with pads 22. Carrier 18 is brought close to substrate 10 and bonded to substrate 10 via adhesive layer 26, such that light-emitting element 30 and pads 22 are laterally separated from each other. Pads 22 and light-emitting element 30 are laterally separated and electrically connected via metal wiring 28.
[0101] The substrate 10 may be a commonly used substrate in the art. For example, the substrate 10 is a driving substrate having a TFT (Thin-Film Transistor) formed on a glass substrate.
[0102] The adhesive layer 26 may be a thermosetting adhesive, such as an epoxy, acrylic or silicone resin-based adhesive, or a UV curing adhesive. Thus, the flexibility of the device may be increased, thereby enabling the production of large-sized devices.
[0103] The thickness of pad 22 may be less than or equal to the thickness of adhesive layer 26. Therefore, since metal wiring 28 does not contact pad 22 during the step of bonding carrier 18 and substrate 10, undesirable pressure does not occur. Consequently, the device yield can be improved, and large-scale devices can be manufactured.
[0104] Figure 7 The step of removing the carrier 18 is shown. The removal of the carrier 18 can be performed using known techniques in the art, such as laser lift-off (LLO), mechanical removal, etc. For example, a UV laser is irradiated through the carrier 18 onto the second adhesive 17 to peel the carrier 18 from the second adhesive 17. Although not shown, the second adhesive 17 can be removed and the upper electrode 34 of the light-emitting element 30 can be exposed after the carrier 18 has been removed.
[0105] Figure 8 The step of forming opening 38 by etching first dielectric layer 36 and adhesive layer 26 down to pad 22 is shown. Metal wiring 28 can act as a mask against etching. After etching, pad 22 and metal wiring 28 can be exposed at opening 38.
[0106] At this step, pad 22 and metal wiring 28 may not be electrically connected.
[0107] Etching can be performed using techniques known in the art. For example, etching can be performed by reactive ion etching such as oxygen plasma etching.
[0108] Figure 9 The step of depositing contact metal 24 on opening 38 is shown, so that pad 22 and metal wiring 28 are electrically connected. Pad 22 and contact metal 24 can constitute first electrode 20. Therefore, pad 22 and light-emitting element 30 can be electrically connected through contact metal 24 and metal wiring 28. Deposition of contact metal 24 can be performed by sputtering, photoresist formation, metal layer etching, etc.
[0109] Figures 10 to 12 The steps from testing the operation of the light emitting element 30 to arranging the repair light emitting element 50 are shown. These steps are arbitrary steps. These steps can be performed before the step of forming the second dielectric layer 40.
[0110] Figure 10 The following figure shows a step for testing the operation of the light-emitting element 30. This step may include electrically connecting a test carrier 68 having a conductive layer 66 to the light-emitting element 30. The test carrier can be made of glass. The conductive layer 66 can be a conductive sheet with a low elastic modulus. Since the conductive layer 66 has a low elastic modulus, it can be electrically connected to the upper electrode 34 of the light-emitting element 30 by applying appropriate pressure.
[0111] Thereafter, a voltage can be applied between the pad 22 and the conductive layer 66 to induce electroluminescence (EL) of the light-emitting element 30 to test whether the light-emitting element 30 is operating normally. In addition to EL, the operation of the light-emitting element 30 can be tested by using photoluminescence (PL). In the case of using PL, PL can be induced in the light-emitting layer of the light-emitting element 30 by excitation light such as ultraviolet light to detect whether the light-emitting element 30 is operating normally.
[0112] Figure 11 The following illustrates the steps for cutting metal wiring 28 connected to a light-emitting element 60 that is not functioning properly. If a light-emitting element 30 is not functioning properly, for example, it is not emitting light or its light intensity is less than a predetermined value, then this light-emitting element 30 is referred to as an NG light-emitting element 60. Metal wiring 28 connected to the NG light-emitting element 60 is cut, for example, by laser 70, thereby disconnecting the electrical connection between the NG light-emitting element 60 and the pad 22.
[0113] The laser 70 may be a commonly used laser in the art, for example, a UV laser emitting 200-400 nm wavelength, a green laser, a near-infrared laser emitting 800-1000 nm wavelength, or a CO2 laser emitting approximately 10 micron wavelength.
[0114] Figure 12 The step of placing the repaired light-emitting element 50 on the contact metal 24 connected to the cut metal wiring 58 is shown. This step may include the step of bonding the lower electrode 52 of the repaired light-emitting element 50 and the contact metal 24 using solder 56. The repaired light-emitting element 50 can be electrically connected to the first electrode 20 on the substrate 10. The solder 56 can be formed on the lower electrode 52 of the repaired light-emitting element 50 or on the contact metal 24. The repaired light-emitting element 50 can cover at least a portion of the first electrode 20 including the contact metal 24 and the pad 22.
[0115] according to Figures 10 to 12 In any of the steps shown in , the operation test of the light emitting element 30 and the arrangement of the light emitting element 50 for repair are performed. Therefore, in the process of the present disclosure, the test and repair of the light emitting element 30 can be easily performed.
[0116] Figure 13 The step of forming the second dielectric layer 40 on at least the first dielectric layer 36 to expose the light emitting element 30 is shown. Optionally, this step may include the step of forming the second dielectric layer 40 on at least the first dielectric layer 36 to expose the repair element 50.
[0117] The second dielectric layer 40 may have a via hole exposing the upper electrode 34 of the light emitting element 30. Alternatively, the second dielectric layer 40 may have a via hole exposing the upper electrode 54 of the repair element 50.
[0118] Furthermore, second dielectric layer 40 may be formed on at least one of substrate 10, pad 22, contact metal 24, adhesion layer 26, and metal wiring 28 at opening 38. Second dielectric layer 40 may be formed on first electrode 20.
[0119] Second dielectric layer 40 may comprise a photosensitive material, or a non-photosensitive material, such as a thermosetting material. Preferably, first dielectric layer 36 may comprise a photosensitive material. More preferably, first dielectric layer 36 may comprise a photosensitive resin. If second dielectric layer 40 comprises a photosensitive resin, vias can be easily formed by dry etching. Furthermore, device flexibility can be increased, enabling the production of larger devices. First dielectric layer 36 and second dielectric layer 40 may be made of the same material or different materials.
[0120] Figure 14 The step of forming the second electrode 42 on the light emitting element 30 is shown. The second electrode 42 can be electrically connected to the upper electrode 34 of the light emitting element 30. The second electrode 42 can be formed on the second dielectric layer 40. The second electrode 42 can be a common electrode electrically connected to the plurality of light emitting devices 30. In addition, the second electrode 42 can be a transparent electrode.
[0121] Alternatively, the step of forming the second electrode 42 on the light-emitting element 30 may include the step of forming the second electrode 42 on the repaired light-emitting element 50. The second electrode 42 may be electrically connected to the upper electrode 54 of the repaired light-emitting element 50. The second electrode 42 may be a common electrode electrically connected to the repaired light-emitting element 50 and the light-emitting element 30.
[0122] As described above, the device 100 of the present disclosure is manufactured. In the manufacturing process of the present disclosure, the metal wiring 28 is formed by a mature wiring method. Although a bonding method is used in the step of arranging the repair light-emitting element 50 on the contact metal 24, no bonding method is used in other processes.
[0123] Therefore, the present disclosure can provide a display using micro LEDs and a manufacturing method thereof, which has a high yield rate, is suitable for large screens, and the micro LEDs can be repaired when necessary.
[0124]
Explanation of symbols
[0125] 1. Substrate
[0126] 2. Solder
[0127] 3.LED
[0128] 4.Joint head
[0129] 5.Thickness variation absorption film
[0130] 10. Substrate
[0131] 12. Spare substrate
[0132] 13. First adhesive
[0133] 14. Alternative carrier
[0134] 15. Laser
[0135] 17. Second adhesive
[0136] 18. Carrier
[0137] 20.First electrode
[0138] 22. Solder pad
[0139] 24. Contact with metal
[0140] 26. Adhesive layer
[0141] 28.Metal wiring
[0142] 30. Light-emitting element, micro LED
[0143] 32. Lower electrode
[0144] 34. Upper electrode
[0145] 36.First dielectric layer
[0146] 38. Open your mouth
[0147] 40. Second dielectric layer
[0148] 42. Second electrode
[0149] 50.Repair the light emitting components
[0150] 52.Lower electrode
[0151] 54. Upper electrode
[0152] 56.Solder
[0153] 58. Cutting metal wiring
[0154] 60.NG light emitting components
[0155] 62.Lower electrode
[0156] 64. Upper electrode
[0157] 66.Conductive layer
[0158] 68. Test vector
[0159] 70. Laser
[0160] 100. Devices
Claims
1. A display device, characterized in that: include: substrate; a first electrode on the substrate; a light emitting element electrically connected to the first electrode via a first metal wiring; as well as electrically connected to the second electrode of the light emitting element, wherein the first electrode and the light emitting element are laterally separated from each other, and wherein the light emitting element is connected to the first metal wiring on a side facing the substrate; The display device further comprises a first dielectric layer, wherein the first dielectric layer comprises the light emitting element. Wherein, the thickness of the first dielectric layer is greater than or equal to the thickness of the light emitting element; wherein the first electrode comprises a pad on the substrate, a first contact metal electrically connected to the pad, and wherein the first metal wiring is electrically connected to the first contact metal; The display device further comprises an adhesive layer on the substrate, wherein a thickness of the pad is less than or equal to a thickness of the adhesive layer; and The display device further includes a second dielectric layer on the first electrode, wherein at least one of the first dielectric layer and the second dielectric layer is made of a photosensitive transparent resin.
2. The display device according to claim 1, wherein A plurality of the light emitting elements are included with different thicknesses.
3. The display device according to claim 1, wherein The light emitting element is a vertical micro LED.
4. The display device according to claim 1, wherein Also includes: a third electrode on the substrate; a repaired light-emitting element electrically coupled to the third electrode; as well as a fourth electrode electrically connected to the repaired light-emitting element, Wherein, the repair light-emitting element covers at least a portion of the third electrode.
5. The display device according to claim 4, wherein The second electrode and the fourth electrode are common electrodes.
6. The display device according to claim 4 or 5, characterized in that The second electrode and the fourth electrode are transparent electrodes.
7. A method for manufacturing a display device, characterized in that: include: a step of arranging a light-emitting element on a carrier; forming a first dielectric layer on the carrier to expose the light-emitting element; forming metal wiring on the light emitting element and the first dielectric layer; forming an adhesive layer on the substrate having the pad; the step of bonding the carrier to the substrate, wherein the metal wiring on the carrier faces the pad and the adhesive layer on the substrate, and wherein the light emitting element and the pad are laterally separated from each other; a step of removing the carrier; etching the first dielectric layer and the adhesive layer down to the pad to form an opening; depositing a contact metal on the opening to electrically connect the pad and the metal wiring to each other; forming a second dielectric layer at least on the first dielectric layer to expose the light emitting element; and forming electrodes on the light-emitting element.
8. The method according to claim 7, characterized in that The light emitting element is a vertical micro LED.
9. The method according to claim 7, characterized in that The thickness of the first dielectric layer is greater than or equal to the thickness of the light emitting element.
10. The method according to claim 7, characterized in that The light emitting element includes a plurality of light emitting elements having different thicknesses.
11. The method according to claim 7, characterized in that The thickness of the pad is less than or equal to the thickness of the adhesive layer.
12. The method according to any one of claims 7 to 11, characterized in that The step of arranging the light emitting element on the carrier includes the steps of transferring the light emitting element provided on the spare substrate to a spare carrier, and transferring the light emitting element transferred to the spare carrier to the carrier.
13. The method according to any one of claims 7 to 11, characterized in that The electrode is a common electrode.
14. The method according to any one of claims 7 to 11, characterized in that The electrode is a transparent electrode.
15. The method according to any one of claims 7 to 11, characterized in that At least one of the adhesive layer, the first dielectric layer, and the second dielectric layer is made of a photosensitive transparent resin.
16. The method according to claim 7, characterized in that include: Before the step of forming the second dielectric layer, a step of testing the operation of the light emitting element; If the light emitting element does not work, cutting off the metal wiring connected to the light emitting element that does not work; as well as a step of arranging a repaired light emitting element on the contact metal connected to the severed metal wiring.
17. The method according to claim 16, characterized in that The step of testing the operation of the light emitting element includes the step of electrically connecting a test carrier having a conductive layer to the light emitting element.
18. The method according to claim 16, characterized in that The step of arranging the repair light emitting element on the contact metal includes the step of bonding using solder.
19. The method according to any one of claims 16 to 18, characterized in that The step of forming a second dielectric layer at least on the first dielectric layer includes forming the second dielectric layer on the opening to expose the repaired light-emitting element, and wherein the step of forming an electrode on the light-emitting element includes forming the electrode on the repaired light-emitting element.
Citation Information
Patent Citations
Micro light emitting diode display panel and manufacturing method therefor
CN107170773A