Glass on antenna with air cavity structure

Abstract

An antenna on glass (AOG) device is disclosed having an air cavity formed at least partially in a photosensitive glass substrate. An air cavity structure at least partially surrounds the air cavity and wherein the air cavity structure is at least partially formed from the photosensitive glass substrate. An antenna is formed from a portion of a top conductive layer disposed over a top surface of the air cavity structure and at least partially overlapping the air cavity. A metallization structure is provided having a bottom conductive layer disposed on a bottom surface of the air cavity structure, wherein the bottom conductive layer is electrically coupled to the top metal layer by a conductive pillar disposed through the photosensitive glass substrate. Further, the AOG device can integrate one or more MIM capacitors and / or inductors that allow for RF filtering and impedance matching.

Description

[0001] Cross-references to related applications

[0002] This patent application claims the benefit of U.S. Nonprovisional Application No. 16 / 910,025, filed June 23, 2020, entitled “ANTENNA ON GLASS WITH AIR CAVITY STRUCTURE,” which has been assigned to the assignee of this application and whose entire contents are expressly incorporated herein by reference. Technical Field

[0003] This disclosure relates generally to antennas, and more particularly, but not exclusively, to antennas on glass device modules and techniques for their manufacture. Background Technology

[0004] Integrated circuit technology has made significant strides in improving computing power through the miniaturization of active components. Packaging equipment can be found in many electronic devices, including processors, servers, radio frequency (RF) integrated circuits, etc. Packaging technology has become cost-effective in high-pin-count devices and / or high-volume components.

[0005] Furthermore, in conventional RF front-end circuitry, the antenna is built and embedded within a packaged substrate. One limitation is the lack of capacitors in the substrate for antenna impedance matching and filtering. Additionally, conventional substrates are lossy (i.e., have low electromagnetic efficiency) at higher frequencies (e.g., millimeter-wave range). Therefore, designers using conventional techniques face numerous challenges, including low antenna gain and high substrate trace losses. Moreover, conventional antenna-in-package (AiP) substrates lack matching and filtering capabilities. For advanced 5G and future 6G millimeter-wave (mmWave) RF front-ends requiring high-efficiency, low-power components and devices, the performance of conventional techniques is limited.

[0006] Therefore, there is a need for systems, apparatuses, and methods to overcome the shortcomings of conventional antenna packaging, including the methods, systems, and apparatuses provided herein. Summary of the Invention

[0007] The following presents a brief summary of the invention relating to one or more aspects and / or examples associated with the apparatus and methods disclosed herein. Therefore, this summary should not be considered a broad overview relating to all contemplated aspects and / or examples, nor should it be considered as identifying key or essential elements relating to all contemplated aspects and / or examples, or describing the scope relating to any particular aspect and / or example. Thus, the sole purpose of this summary is to present, in a simplified form, certain concepts relating to one or more aspects and / or examples relating to the apparatus and methods disclosed herein, prior to the detailed embodiments presented below.

[0008] According to various aspects disclosed herein, at least one aspect includes an antenna-on-glass (AOG) device having a cavity at least partially formed in a photosensitive glass substrate. The cavity structure at least partially surrounds the cavity and is at least partially formed by the photosensitive glass substrate. The antenna is formed from a portion of a top conductive layer disposed above and at least partially overlapping the cavity structure. A metallization structure is provided having a bottom conductive layer disposed on the bottom surface of the cavity structure, wherein the bottom conductive layer is electrically coupled to the top metallization layer via conductive pillars disposed through the photosensitive glass substrate.

[0009] According to various aspects disclosed herein, at least one aspect includes a method for manufacturing an antenna-on-glass (AOG) device. The method may include: forming a gas cavity in a photosensitive glass substrate; forming a gas cavity structure at least partially surrounding the gas cavity, wherein the gas cavity structure is at least partially formed by the photosensitive glass substrate; forming an antenna from a portion of a top conductive layer disposed above a top surface of the gas cavity structure, wherein the antenna at least partially overlaps the gas cavity; and forming a metallization structure having a bottom conductive layer disposed above a bottom surface of the gas cavity structure, wherein the bottom conductive layer is electrically coupled to the top conductive layer via conductive pillars disposed through the photosensitive glass substrate.

[0010] Other features and advantages associated with the apparatus and methods disclosed herein will be apparent to those skilled in the art based on the accompanying drawings and detailed embodiments. Attached Figure Description

[0011] A more complete understanding of various aspects of this disclosure and its many accompanying advantages will be readily obtained when considered in conjunction with the accompanying drawings, which are for illustrative purposes only and not for limiting the scope of this disclosure.

[0012] Figure 1 The illustration shows an on-glass antenna device according to at least one aspect of the present disclosure.

[0013] Figure 2 The illustration shows another configuration of a portion of an on-glass antenna device according to at least one aspect of this disclosure.

[0014] Figure 3 The illustration shows a top view of a portion of an on-glass antenna device according to at least one aspect of the present disclosure.

[0015] Figure 4 The illustration shows another configuration of an on-glass antenna device according to at least one aspect of this disclosure.

[0016] Figure 5 The illustration shows another configuration of an on-glass antenna device according to at least one aspect of this disclosure.

[0017] Figure 6 The illustration shows another configuration of an on-glass antenna device according to at least one aspect of this disclosure.

[0018] Figure 7 The illustration shows another configuration of an on-glass antenna device according to at least one aspect of this disclosure.

[0019] Figure 8 The illustrations depict at least one aspect of this disclosure. Figure 7 It is part of the antenna equipment on the glass.

[0020] Figures 9A to 9F The illustrations depict manufacturing techniques according to one or more aspects of this disclosure.

[0021] Figure 10 The illustration shows another configuration of an on-glass antenna device according to at least one aspect of this disclosure.

[0022] Figure 11 The illustration shows an alternative substrate portion of an on-glass antenna device according to at least one aspect of the present disclosure.

[0023] Figures 12A to 12B The illustrations depict manufacturing techniques according to one or more aspects of this disclosure.

[0024] Figure 13 A flowchart illustrating a method for manufacturing an antenna-on-glass device according to at least one aspect of this disclosure is shown.

[0025] Figure 14 An exemplary mobile device according to at least one aspect of this disclosure is illustrated.

[0026] Figure 15 Various electronic devices that can utilize one or more aspects of this disclosure are illustrated.

[0027] By convention, the features depicted in the accompanying drawings may not be drawn to scale. Therefore, for clarity, the dimensions of the features shown may be arbitrarily enlarged or reduced. By convention, some elements in the drawings are simplified for clarity. Therefore, the drawings may not depict all parts of a particular device or method. Furthermore, the same reference numerals denote the same features throughout the specification and the drawings. Detailed Implementation

[0028] Various aspects of this disclosure are illustrated in the following description and accompanying drawings with reference to specific embodiments. Alternative aspects or embodiments may be designed without departing from the scope of the teachings herein. Furthermore, well-known elements of the illustrative embodiments herein may not be described in detail or may be omitted to avoid obscuring the relevant details of the teachings in this disclosure.

[0029] In some of the described example implementations, examples are identified where various component structures and operational parts can be derived from known conventional techniques and then arranged according to one or more exemplary embodiments. In such cases, internal details of known conventional component structures and / or operational parts may be omitted to help avoid potential confusion with the concepts shown in the illustrative embodiments disclosed herein.

[0030] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms “a,” “an,” and “the” also include the plural forms unless the context clearly indicates otherwise. It will also be understood that the terms “comprising,” “including,” “including,” and / or “including” as used herein specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof.

[0031] Figure 1 An antenna-on-glass (AOG) device 100 according to at least one aspect of the present disclosure is illustrated. The AOG device 100 includes a cavity structure 110 and a cavity 112 at least partially formed in a photosensitive glass substrate 101. The AOG device 100 allows for the integration of one or more metal-insulator-metal (MIM) capacitors 120 and / or inductors 130 into the AOG device 100 for RF filtering and / or impedance matching in high-frequency applications such as 5G millimeter-wave frequencies.

[0032] The air cavity 112 has an improved dielectric constant (Dk) and loss tangent (Df) compared to conventional designs because for air (Dk = 1, Df = 0). The air cavity 112 can be formed by removing a portion of the photosensitive glass substrate 101. The photosensitive glass substrate 101 is also used to form the air cavity structure 110. The air cavity 112 can be formed by converting an exposed glass region into ceramic using an ultraviolet (UV) laser beam with varying depths of focus and then removing the converted ceramic through an etched hole 114. The AOG device 100 may also include a top conductive layer 152 and a top insulating layer 153. The top conductive layer may be formed of a conductive material (such as Cu), which is plated and patterned on the glass of the air cavity structure 110. A portion of the top conductive layer 152 may be patterned to form one or more antennas 154, which may be patch antennas, etc. The one or more antennas 154 together with the top conductive layer 152 may be covered by the top insulating layer 153 for passivation and protection of the one or more antennas 154. The top conductive layer 152 and antenna 154 can be copper (Cu) or other highly conductive materials, such as silver (Ag), gold (Au), aluminum (Al), and other similar materials, alloys, or combinations thereof. The top insulating layer 153 can be within an interlayer dielectric (ILD) layer. The ILD layer 153 can be formed from materials such as doped silicon dioxide (SiO2) or its fluorine-doped, carbon-doped, and carbon-doped forms, as well as spin-coated organic polymer dielectrics such as polyimide (PI), polynorbornene, benzocyclobutene (BCB), polytetrafluoroethylene (PTFE), and / or silicon-based polymer dielectrics.

[0033] The AOG device 100 also includes features such as through-glass vias (TGV) / conductive pillars (e.g., copper (Cu)), referred to herein as TGV 102. One or more MIM capacitors 120 may be formed at least partially of a portion of the metallization structure 140. Similarly, one or more inductors 130 may be formed at least partially of a portion of the metallization structure 140. The one or more MIM capacitors 120 and inductors 130 may be used for RF filtering and impedance matching. The metallization structure 140 may be formed of multiple conductive layers and insulating layers. For example, conductive layers 142, 144, and 146 may be copper (Cu) or other highly conductive materials such as silver (Ag), gold (Au), aluminum (Al), and other similar materials, alloys, or combinations of materials. Insulating layers may be formed as interlayer dielectric (ILD) layers 162, 164, and 166. ILD layers 162, 164, and 166 may be formed from materials such as doped silicon dioxide (SiO2) or its fluorine-doped, carbon-doped, and carbon-doped forms, as well as spin-coated organic polymer dielectrics such as polyimide (PI), polynorbornene, benzocyclobutene (BCB), polytetrafluoroethylene (PTFE), and / or silicon-based polymer dielectrics.

[0034] The AOG device 100 may also include one or more connection structures 170 that facilitate electrical and / or mechanical coupling between the AOG device 100 and external circuitry / devices. In some aspects, the connection structure 170 may be one or more of a wafer-level package (WLP) ball, a Cu pillar, a Cu pillar with solder bumps, etc. The connection structure 170 may be coupled to a conductive layer 146 through an opening in an insulating layer 166. Using a via 145 between conductive layers 146 and 144 and a via 143 between conductive layer 144 and the bottom conductive layer 142, RF signals and optionally other signals and / or power can be conducted from the connection structure 170 via a metallization structure 140 and then coupled to a conductive pillar 102 (such as a through-glass via (TGV), Cu pillar, etc.), which may also be referred to herein as TGV 102. The conductive pillar 102 is electrically coupled to a top conductive layer 152, which may include one or more antennas 154. One or more MIM capacitors 120 may be formed at least partially from a portion of the metallization structure 140. Similarly, one or more inductors 130 may be formed at least partially from a portion of the metallization structure 140 and may be planar inductors (e.g., two-dimensional (2D) spiral inductors), 2.5D inductors, or 3D inductors formed on one or more conductive layers of the metallization structure 140, as known in the art. One or more MIM capacitors 120 and one or more inductors 130 may be used for RF filtering and impedance matching. The metallization structure 140 may be formed from multiple conductive layers and insulating layers, which will be discussed in more detail below.

[0035] Figure 2 Another configuration of a portion of an AOG device 200 according to at least one aspect of this disclosure is illustrated. An alternative configuration of the air cavity 212 is shown. The air cavity 212 can be formed by removing a portion of a photosensitive glass substrate 201. The photosensitive glass substrate 201 also forms the air cavity structure 210 from uncured photosensitive glass. As discussed with respect to the AOG device 100, the air cavity 212 can be formed by converting an exposed glass region into ceramic by varying UV laser beams with different depths of focus and then removing the converted ceramic through an etched aperture 214. As used herein, the term "etched aperture" refers to any opening leading to the region of the air cavity 212 to allow removal of the ceramic (converted glass) material from the photosensitive glass substrate 201 after etching. Therefore, the etched aperture 214 need not have a circular configuration and can be formed as a slot or any other geometric configuration. Alternatively, the air cavity in the glass can also be fabricated by direct femtosecond laser writing, followed by heat treatment and continuous wet etching. Figure 2 As shown, the air cavity 212 can be formed by two or more cavities connected internally to cavity vents 213. It should be understood that having two cavities allows for the formation of an internal beam 211, which can provide additional structural strength. As discussed with respect to the AOG device 100, a top conductive layer 252 is provided. The top conductive layer 252 can be formed of a conductive material (such as Cu or other materials discussed herein), which is plated and patterned on the top of the air cavity structure 210 formed of unconverted photosensitive glass. A portion of the top conductive layer 252 can be patterned to form one or more antennas, which may be patch antennas, etc., as discussed above. A bottom conductive layer 242 can be formed of a conductive material (such as Cu or other materials discussed herein), which is plated and patterned on the bottom portion of the air cavity structure 210. The top conductive layer 252 and the bottom conductive layer 242 can be electrically coupled via conductive posts 202, which can be formed as TGVs. For the sake of brevity, the remaining structural components of AOG device 200 are not illustrated, but may be similar to AOG device 100 or other AOG devices disclosed herein. Furthermore, it should be understood from the foregoing that the air chamber configuration may take various forms in the disclosed aspects and is not limited to the configuration shown herein.

[0036] Figure 3A top view of a portion of an AOG device 100 according to at least one aspect of this disclosure is illustrated. The top view illustrates multiple structures at different layers / depths (e.g., top conductive layer 252 and bottom conductive layer 242) and should not be interpreted as a partial cross-sectional view. As discussed above, unconverted photosensitive glass forms the cavity structure 110. Furthermore, etched holes 114 open into the cavity 112 to allow removal of the converted ceramic during manufacturing (discussed in more detail below). A top conductive layer 152 is also provided, as discussed above with respect to the AOG device 100. A portion of the top conductive layer 152 may be patterned to form an antenna 154, which may be a patch antenna, etc. The bottom conductive layer 142 may also be formed of a conductive material (such as Cu or other materials discussed herein), which is plated and patterned on the bottom portion of the cavity structure 110. The top conductive layer 152 and the bottom conductive layer 142 may be electrically coupled by conductive posts 102, which may be formed as TGVs filled with Cu or other conductive materials. It should be understood that the foregoing aspects and descriptions are provided by way of example only, and that various aspects of this disclosure are not limited to the specific descriptions, references and / or descriptions provided by way of example.

[0037] Figure 4 Another configuration of the AOG device 400 according to at least one aspect of this disclosure is illustrated. An alternative configuration of the gas cavity 412 is also illustrated. The gas cavity 412 can be formed by removing a portion of the photosensitive glass. The photosensitive glass (unconverted) also forms the gas cavity structure 410. As previously described, in at least one aspect, the gas cavity 412 is formed by converting an exposed glass region into ceramic by varying UV laser beams with different focal depths and then removing the converted ceramic through an etched hole 414. Figure 4 In the aspects shown, the air cavity 412 can be formed by two or more cavities, which can be internally connected to cavity vents, or alternatively connected in non-glass column areas (none of which is shown). It should be understood that having two cavities allows for the formation of an internal beam 411, which can provide additional structural strength. In this configuration, the internal beam 411 between the two cavities is substantially vertical and provides support for the top conductive layer 452, since there is no top beam for the unconverted photosensitive glass. In an alternative configuration, the top beam can be provided with an internal beam 411 for providing additional support for the top beam. Other features and components shown are similar to those discussed with respect to the AOG device 100. Therefore, to avoid repetition, a detailed description of each of the shown features will not be provided. Furthermore, it should be understood from the foregoing that the air cavity configuration can take various forms in conjunction with other features in the disclosed aspects, and the disclosed aspects are not limited to the configurations shown herein.

[0038] Figure 5The illustration shows another configuration of a portion of an AOG device 500 according to at least one aspect of this disclosure. A gas cavity 512 can be formed by removing a portion of photosensitive glass. The photosensitive glass also forms part of the gas cavity structure 510. As previously described, in at least one aspect, the gas cavity 512 is formed by transforming an exposed glass region into ceramic by varying UV laser beams with different focal depths and then removing the transformed ceramic through an etched hole 514. Figure 5 In the illustrated aspect, the top beam 511 can be formed of a second material, which is a low-Dk and low-Df dielectric material. The second material can be at least one of silicon dioxide (SiO2) or benzocyclobutene (BCB) or other similar materials. In this configuration, the top beam 511 forms the top surrounding the gas cavity 512 and can be formed on the gas cavity portion before the material in the cavity is removed. In some examples, the low-Dk and low-Df dielectric forming the top beam 511 can be applied over a photosensitive glass (PSG) that has been UV exposed and transformed into ceramic by physical vapor deposition (PVD) or spin coating. Etched holes 514 can be formed in the top beam 511 (e.g., low-Dk / Df dielectric) by photolithography. The gas cavity 512 can be formed by etching the ceramic from the etched holes 514 formed through the top beam 511.

[0039] The top beam 511 provides support for the top conductive trace 552, as there is no top beam for the unconverted photosensitive glass. Other features and components shown are similar to those discussed with respect to the AOG device 100. Therefore, to avoid repetition, a detailed description of each of the shown features will not be provided. Furthermore, it should be understood from the foregoing that various forms and / or configurations may be taken in the disclosed aspects and are not limited to the configurations shown herein.

[0040] Figure 6The illustration shows another configuration of a portion of an AOG device 600 according to at least one aspect of the present disclosure. A metallization structure 640 has a via 645 between conductive layers 646 and 644, and a via 643 between conductive layer 644 and a bottom conductive layer 642. The metallization structure 640 also includes an insulating layer, which may be formed as interlayer dielectric (ILD) layers 662, 664, and 666. As disclosed herein, ILD layers 662, 664, and 666 may be formed of a material such as silicon dioxide (SiO2) or other materials. A MIM capacitor 620 in this configuration may be formed at least partially from a portion of the metallization structure 640. Specifically, the bottom conductive layer 642 is also used to form the bottom metal of the MIM capacitor 620. A dielectric layer 624 is disposed between the bottom conductive layer 642 and the top metal 626 of the MIM capacitor 620. The MIM capacitor is formed in the ILD layer 662 and uses a bottom conductive layer 642 and is coupled to other components of the AOG device 600 through one or more vias 643 to the conductive layer 644. It should be understood that this configuration of the MIM capacitor 620 can be used in other configurations described herein and illustrated in the associated figures. The other features and components shown are similar to those discussed with respect to the AOG device 100. Therefore, to avoid repetition, a detailed description of each of the shown features will not be provided. Furthermore, it should be understood from the foregoing that the disclosed aspects can take various forms and / or configurations and are not limited to those shown herein.

[0041] Figure 7 Another configuration of a portion of an AOG device 700 according to at least one aspect of the present disclosure is illustrated. This configuration generally has an open cavity 712, the bottom portion of which is open. As in the previous example, the cavity 712 can be formed by removing a portion of a photosensitive glass substrate 701. The photosensitive glass substrate 7101 is also used to form a portion of the cavity structure 710. As discussed herein, the cavity 712 is formed by converting a region of the photosensitive glass substrate 7101 into ceramic and removing the converted ceramic through an etched hole 714. The AOG device 700 may also include a top conductive layer 752 and a top insulating layer 753. The top conductive layer 752 may be formed of a conductive material (such as Cu) as discussed herein, which is plated and patterned on the unconverted photosensitive glass of the cavity structure 710, which supports the top conductive layer 752 and the top insulating layer 753. A portion of the top conductive layer 752 can be patterned to form antenna 754 or more antennas, which may be patch antennas, etc.

[0042] As mentioned above, Figure 7The illustrated configuration typically features an open air cavity 712, with the bottom portion of the air cavity structure 710 being open. The bottom portion 780 of the air cavity 712 can be formed of a second glass material having low Dk and Df. The substrate material of the bottom portion 780 can also be quartz (e.g., silicon dioxide with low Dk and low Df). The substrate material of the bottom portion 780 does not need to be a photosensitive glass material. The bottom portion 780 can be bonded to the air cavity structure 710 via a bonding layer 785. The bonding layer 785 can be formed of one or more glass-to-glass / oxide-to-oxide bonding materials, such as SiO2, silicon oxynitride (SiONx), and similar materials.

[0043] The AOG device 700 also includes a metallization structure 740, which may be formed on the bottom portion 780, including a bottom portion conductive layer 742 in an additional conductive layer and insulating layer, as discussed herein. Conductive pillars 702, such as through-glass vias (TGVs) filled with a conductive material (e.g., Cu), will penetrate various materials, such as the photosensitive glass substrate 701 adjacent to the air cavity structure 710, the bottom portion 780, and the bonding layer 785, to allow electrical coupling between the top conductive layer 752 and the bottom portion conductive layer 742. One or more MIM capacitors 720 may be formed at least partially of a portion of the metallization structure 740. However, as discussed above, in addition to the configuration shown, the MIM capacitors 720 may be formed in different conductive and / or insulating layers of the metallization structure 740. Similarly, one or more inductors 730 may be formed at least partially of a portion of the metallization structure 740. Depending on the inductor design (e.g., planar, 3D, etc.), one or more inductors 730 may reside in one or more layers of the metallized structure 740. As discussed above, one or more MIM capacitors 720 and one or more inductors 730 may be used for RF filtering and impedance matching. Other features and components shown are similar to those discussed with respect to AOG device 100. Therefore, to avoid repetition, a detailed description of each of the features shown will not be provided. Furthermore, it should be understood from the foregoing that the disclosed aspects may take various forms and / or configurations and are not limited to the example configurations shown herein.

[0044] Figure 8 A portion of an AOG device 700 according to at least one aspect of this disclosure is illustrated. As described above, the air cavity 712 has an open configuration, and the bottom of the air cavity is "open" because it is not surrounded by uncured photosensitive glass forming the air cavity structure 710. For example, the air cavity structure 710 includes a top beam 711 and sidewall portions 713, but no bottom beam. The open bottom portion of the air cavity 710 is surrounded by a bottom portion 780, which is bonded to the air cavity structure 710 by a bonding layer 785. Figure 8In the aspects shown, although each air cavity 712 may have one or more etched holes 714 coupled to the air cavity 712, the etched holes 714 need not be consistent in spacing, size, and / or location. Thus, in the illustrated cross-sectional view, the air cavities 712 on the left can be shown as being covered by top beams that do not have etched holes 714 in those sections, while the air cavities 712 on the right are clearly illustrated with etched holes 714. As discussed with respect to the AOG device 700, a top conductive layer 752 is provided. The top conductive layer 752 may be formed of a conductive material (such as Cu or other materials discussed herein) that is plated and patterned on the top glass surface of the air cavity structure 710. The bottom portion conductive layer 742 may be formed of a conductive material (such as Cu or other materials discussed herein) that is plated and patterned on the bottom surface of the bottom portion 780. As mentioned above, it should be understood that the bottom portion 780 may be formed of a glass material different from the photosensitive glass of the air cavity structure 710. The top conductive layer 252 and the bottom conductive layer 742 can be electrically coupled via conductive posts 702, which can be formed as TGV. It should be understood from the foregoing that the air cavity configuration can take various forms and is not limited to the configuration shown herein in the disclosed aspects.

[0045] Manufacturing methods are presented to aid in understanding the various aspects of this disclosure. Other manufacturing methods are possible, and the manufacturing methods discussed are only presented to aid in understanding the various aspects disclosed herein.

[0046] Figures 9A to 9F The illustrations depict manufacturing techniques according to one or more aspects of this disclosure. Reference Figure 9A Part (i) of the manufacturing process begins with providing a photosensitive glass (PSG) substrate 901. The PSG substrate 901 has regions defining future components, such as regions associated with a cavity 912, a TGV 902, a cavity structure 910, and an etched hole 914. In some aspects, a region may define more than one component. For example, the cavity structure 910 may also be used to define both the TGV 902 and the cavity 912. Alternatively, the TGV 902 and the cavity 912 may be used to define the cavity structure 910.

[0047] In part (ii) of the manufacturing process, the PSG substrate 901 has some or all of the areas defined for future conversion into ceramic components to allow for final material removal. As described above, UV exposure and thermal baking using laser beams(one or more) with different focal depths can cause the affected areas of the PSG to be converted into ceramic for the formation of TGV 902, the cavity 912, and the etched holes 914. The remaining unexposed / unconverted PSG portions of the PSG substrate 901 can be used to form the cavity structure 910. The cavity structure 910 can have equal height / thickness (e.g., t梁 The top and bottom beam sections (50μm to 200μm) can be made, or each beam can have a different thickness. The beam height (t) supporting the conductive layer (e.g., Cu RDL) is... 梁 The configuration can vary for different configurations (such as those discussed above). Additionally, as mentioned above, in some open-cavity body configurations, only a top beam or a bottom beam may be present. Similarly, various cavity structures can be easily defined during the design phase. In at least one aspect, the TGV 902 and air cavity 912 forming regions can be generated using two photomasks. Furthermore, the PSG substrate 901 can be transformed into ceramic in the desired region by UV exposure and / or by changing the focal length of the laser beam (such as a femtosecond laser with an appropriate wavelength).

[0048] In part (iii) of the manufacturing process, the PSG substrate 901 has material removed (e.g., etched away) from the TGV 902 region, which is converted to ceramic. It should be understood that the converted ceramic material in the air cavity 912 and the etched hole 914 region through the air cavity structure 910 is not removed at this stage.

[0049] refer to Figure 9B In part (iv) of the manufacturing process, the PSG substrate 901 has a TGV 902 region filled with a conductive material (e.g., Cu) to form TGV 902 (also referred to herein as a conductive pillar). It should be understood that the converted ceramic material in the air cavity 912 and the etched hole 914 region through the air cavity structure 910 is not removed at this stage.

[0050] In part (v) of the manufacturing process, the PSG substrate 901 has a top conductive layer 952 formed above the PSG substrate 901. A portion of the top conductive layer 952 is electrically coupled to the TGV 902. The converted ceramic material in the air cavity 912 and the etched hole 914 region through the air cavity structure 910 is not removed at this stage because it provides a support structure during the formation of the top conductive layer 952. Furthermore, it should be understood that the top conductive layer 952 can be patterned to form antenna radiating pads together with other traces and / or pads.

[0051] In part (vi) of the manufacturing process, the PSG substrate 901 has a top insulating layer 953 formed over the top conductive layer 952 and any exposed portions of the PSG substrate 901. The top insulating layer 953 provides passivation and protection for the antenna radiating pads and any other structures of the top conductive layer 952. The converted ceramic material in the air cavity 912 and the etched hole 914 region through the air cavity structure 910 is not removed at this stage because it provides a support structure during the formation of the top insulating layer 953.

[0052] refer to Figure 9CIn part (vii) of the manufacturing process, the PSG substrate 901 has a bottom conductive layer 942 formed on top of the PSG substrate 901. The AOG device 900 being manufactured can be flipped over to facilitate processing of the bottom side portion. It should be understood that a portion of the bottom conductive layer 942 is electrically coupled to the TGV 902. The converted ceramic material in the air cavity 912 and the etched hole 914 region through the air cavity structure 910 is not removed at this stage because they provide a support structure during the formation of the bottom conductive layer 942. Furthermore, it should be understood that the bottom conductive layer 942 can be patterned to form feed lines together with other traces and / or pads.

[0053] In part (viii) of the manufacturing process, the PSG substrate 901 has an insulating layer 962 formed over the bottom conductive layer 942 and any exposed portions of the PSG substrate 901. The bottom insulating layer 962 provides passivation for the bottom conductive layer 942. Additionally, openings are formed for vias between the bottom conductive layers. The converted ceramic material in the air cavity 912 and the etched hole 914 region through the air cavity structure 910 is not removed at this stage because it provides a support structure during the formation of the bottom insulating layer 962.

[0054] In part (ix) of the manufacturing process, the PSG substrate 901 has a via 943 formed in an insulating layer 962. The via 943 is electrically coupled to a bottom conductive layer 942. The via can be formed by filling the opening in the bottom insulating layer 962 with a conductive material (e.g., Cu, etc.). It should be understood that, depending on the desired thickness, the bottom insulating layer 962 and the via 943 can be formed of one or more layers of material. The converted ceramic material in the air cavity 912 and the etched hole 914 region through the air cavity structure 910 is not removed at this stage because it provides a support structure during the formation of the via 943.

[0055] refer to Figure 9DIn part (x) of the manufacturing process of AOG device 900, PSG substrate 901 has a MIM capacitor 920 formed above insulating layer 962. It should be understood that the bottom metal 922 of the MIM capacitor is electrically coupled to a portion of bottom conductive layer 942 via via 943. It should be understood that one or more MIM capacitors 920 may be formed of two metal structures (bottom metal 922 and top metal 926), wherein the insulating layer serves as dielectric 924, and this insulating layer may be silicon nitride (SiN) or any suitable dielectric material. The bottom metal 922 and the top metal may be formed of Cu or other suitable metals. It should be understood that the MIM capacitor 920 may be formed in different layers, and in the alternative aspects disclosed herein, a portion of an existing conductive layer (e.g., bottom conductive layer 942) may be used as either the top metal or the bottom metal. Therefore, it should be understood that the disclosed aspects are not limited to the examples illustrated herein. The converted ceramic material in the air cavity 912 and the etched hole 914 region through the air cavity structure 910 is not removed at this stage because it provides a support structure during the formation of the MIM capacitor 920.

[0056] In part (xi) of the manufacturing process, a second bottom conductive layer 944 is formed over an insulating layer 962, which in turn is formed over the bottom conductive layer 942. A portion of the second bottom conductive layer 944 is electrically coupled to a first via 943 formed in the insulating layer 962. The first via 943 is electrically coupled to the bottom conductive layer 942, which allows for electrical coupling between the second bottom conductive layer 944 and the bottom conductive layer 942. The converted ceramic material in the air cavity 912 and the etched hole 914 region through the air cavity structure 910 is not removed at this stage because it provides a support structure during the formation of the second bottom conductive layer 944.

[0057] In part (xii) of the manufacturing process of the AOG device 900, a second bottom insulating layer 964 is formed over the second bottom conductive layer 944 and the MIM capacitor 920. Additionally, openings are formed for vias to connect the second bottom conductive layer 944 and optionally to the MIM capacitor 920. The converted ceramic material in the air cavity 912 and the etched hole 914 region through the air cavity structure 910 is not removed at this stage because it provides a support structure during the formation of the bottom insulating layer 962.

[0058] refer to Figure 9EIn part (xiii) of the manufacturing process of the AOG device 900, a third bottom conductive layer 946 is formed above a second bottom insulating layer 964, which in turn is formed above the second bottom conductive layer 944. Additionally, as described above, a second via 945 is formed by filling an opening in the second bottom insulating layer 964. A portion of the third bottom conductive layer 946 is electrically coupled to the second via 946 formed in the second bottom insulating layer 964. The second via 945 is also electrically coupled to the second bottom conductive layer 944, which allows for electrical coupling between the second bottom conductive layer 944 and the third bottom conductive layer 946. Ultimately, the combination of conductive layers 942, 944, and 946 and vias 943 and 945 allows for electrical coupling between conductive layers 942, 944, and 946, and to the MIM capacitor 920, TGV 902, and the top conductive layer 952. The converted ceramic material in the air cavity 912 and the etched hole 914 region through the air cavity structure 910 is not removed at this stage because it provides a support structure during the formation of the third bottom conductive layer 946 and the second through hole 945.

[0059] In part (xiv) of the manufacturing process of AOG device 900, a third bottom insulating layer 966 is formed above a third bottom conductive layer 946. Additionally, openings are formed in the third bottom insulating layer to allow electrical coupling to a connection structure, thereby connecting the third bottom conductive layer 946 to an external component. The third bottom insulating layer 966 can provide protection for the third bottom conductive layer 946 during bump formation processes (e.g., combining pad openings, etc.). With the addition of the third bottom conductive layer 946, a metallization structure 940 is also formed, as it includes conductive layers 942, 944, and 946, vias 943 and 945, and insulating layers 962, 964, and 966. The converted ceramic material in the regions of the air cavity 912 and the etched holes 914 through the air cavity structure 910 is not removed at this stage because it provides a support structure during the formation of the third bottom insulating layer 962.

[0060] In a portion (xv) of the manufacturing process of the AOG device 900, a connection structure 970 is formed over a third bottom conductive layer 946 at a previously formed opening. The connection structure 970 can be one or more of a wafer-level package (WLP) ball, a Cu pillar, a Cu pillar with solder bumps, etc. The connection structure 970 can be formed by a WLP ball dropping process, a Cu pillar bump forming process, or any suitable process for forming a connection structure over an opening in the third bottom conductive layer 946 (e.g., combined with a pad opening). The connection structure 970 can be coupled to the third bottom conductive layer 946 via a filled opening in the third bottom insulating layer 966. RF signals and optional other signals and / or power can be conducted from the connection structure 970 through the metallized structure 940 using conductive layers 942 and 944 and vias 943 and 145 between 944 and 946. The metallization structure 940 also allows coupling to the conductive pillar 902 (e.g., TGV 902) and the top conductive layer 952, and also allows coupling to the MIM capacitor 920. The converted ceramic material in the air cavity 912 and the etched hole 914 region through the air cavity structure 910 is not removed at this stage.

[0061] refer to Figure 9F In part (xvi) of the manufacturing process of AOG device 900, etched holes 914 are formed by removing (e.g., etching removal) the ceramic glass material defined and transformed in previous manufacturing parts (e.g., see parts (i) and (ii)). Any portion of the top insulating layer 953 or top conductive layer 952 covering the etched holes 914 may also be removed. Alternatively, openings may be formed for the etched holes 914 during the formation of the top conductive layer 952 and / or the top insulating layer 953 or in any previous processing stage. Furthermore, it should be understood that a plurality of etched holes 914 will be formed between the top beams of the air cavity structure 910 to allow access to the respective air cavity 912 regions.

[0062] refer to Figure 9F In part (xvii) of the manufacturing process of the AOG device 900, air cavities 912 are formed by removing (e.g., etching removal) the ceramic glass material defined and transformed in previous manufacturing parts (e.g., see parts (i) and (ii)). As described above, it should be understood that a plurality of etched holes 914 will be formed between the top beams of the air cavity structure 910 to allow access to the respective air cavities 912. The ceramic material is removed from the air cavities using the etched holes 914, and the air cavities are formed during removal.

[0063] Figure 10The illustration shows another antenna-on-glass (AOG) device 1000 according to at least one aspect of the present disclosure. The AOG device 1000 includes a cavity structure 1010 and a cavity 1012, at least partially formed by a photosensitive glass substrate 1007, in this example, the photosensitive glass substrate 1007 being formed by a first photosensitive glass substrate 1001, a second photosensitive glass substrate 1003, and a third photosensitive glass substrate 1005. The cavity structure 1010 may include a first beam 1011, which may be formed by the first photosensitive glass substrate 1001. Additionally, sidewalls 1015 and 1017 may be formed by the second photosensitive glass substrate 1002. The sidewalls 1015 and 1017 may be disposed away from and substantially perpendicular to the first beam 1011. The cavity structure 1010 may include a second beam 1013. The second beam may be formed by the third photosensitive glass substrate. Sidewalls 1015 and 1017 may be disposed between the first beam 1011 and the second beam 1013. It should be understood that sidewalls 1015 and 1017 may form part of a three-dimensional continuous sidewall. For example, if the air cavity has a general cubic shape, the sidewalls will form the four sides of the cube, and the top beam 1011 and bottom beam 1013 will correspondingly define the top and bottom of the cubic structure forming the air cavity 1012. It should be understood that the aspects disclosed herein are not limited to specific geometries or the various aspects shown, and are provided only to aid in the interpretation of the aspects disclosed herein.

[0064] The first photosensitive glass substrate 1001 and the second photosensitive glass substrate 1003 may each have different optical band gaps (through ion doping, such as cerium (Ce), silver (Ag), sodium (Na), fluorine (F), etc.). For example, the first photosensitive glass substrate 1001 may have a wide optical band gap, and the second photosensitive glass substrate 1003 may have a narrow optical band gap. For example, the optical band gap range of PSG can be from 2.5 electron volts (eV) to 5.5 eV. Therefore, in some aspects, a wide band gap may have a value close to the top of this range (e.g., 5.5 eV) and a narrow band gap may have a value close to the bottom of this range (e.g., 2.5 eV). Furthermore, in some aspects disclosed herein, the third photosensitive glass substrate 1005 and the first photosensitive glass substrate 1001 may each have the same optical band gap.

[0065] The AOG device 1000 allows for the integration of one or more metal-insulator-metal (MIM) capacitors 1020 and / or inductors 1030 for RF filtering and / or impedance matching in high-frequency applications such as 5G millimeter-wave frequencies. The air cavity 1012 has an improved dielectric constant (Dk) and loss tangent (Df) compared to conventional designs because for air (Dk = 1, Df = 0). The air cavity 1012 can be formed by removing a portion of the second photosensitive glass substrate 1003. As discussed above, the second photosensitive glass substrate 1003 is also used to form the air cavity structure 1010. The air cavity 1012 can be formed by converting an exposed glass region into ceramic and then removing the converted ceramic through an etched hole 1014. The AOG device 1000 may also include a top conductive layer 1052 and a top insulating layer 1053. The top conductive layer 1052 may be formed of a conductive material (such as Cu), which is plated and patterned on the glass of the air cavity structure 1010. A portion of the top conductive layer 1052 may be patterned to form one or more antennas 1054, which may be patch antennas, etc. The one or more antennas 1054, together with the top conductive layer 1052, may be covered by a top insulating layer 1053 for passivation and protection of the one or more antennas 1054. The top conductive layer 1052 and the antennas 1054 may be copper (Cu) or other highly conductive materials, such as silver (Ag), gold (Au), aluminum (Al), and other similar materials, alloys, or combinations of materials. The top insulating layer 1053 may be in an interlayer dielectric (ILD) layer. The ILD layer 1053 can be formed from materials such as doped silicon dioxide (SiO2) or its fluorine-doped, carbon-doped and carbon-doped forms, as well as spin-coated organic polymer dielectrics such as polyimide (PI), polynorbornene, benzocyclobutene (BCB), polytetrafluoroethylene (PTFE) and / or silicon-based polymer dielectrics.

[0066] The AOG device 1000 also includes features such as through-glass vias (TGV) / conductive pillars (e.g., Cu), referred to herein as TGV 1002. One or more MIM capacitors 1020 may be formed at least partially of a portion of the metallization structure 1040. Similarly, one or more inductors 1030 may be formed at least partially of a portion of the metallization structure 1040. The one or more MIM capacitors 1020 and one or more inductors 1030 may be used for RF filtering and impedance matching. The metallization structure 1040 may be formed of multiple conductive layers and insulating layers. For example, conductive layers 1042, 1044, and 1046 may be copper (Cu) or other highly conductive materials such as silver (Ag), gold (Au), aluminum (Al), and other similar materials, alloys, or combinations of materials. Insulating layers may be formed as interlayer dielectric (ILD) layers 1062, 1064, and 1066. ILD layers 1062, 1064, and 1066 may be formed from materials such as doped silicon dioxide (SiO2) or its fluorine-doped, carbon-doped, and carbon-doped forms, as well as spin-coated organic polymer dielectrics such as polyimide (PI), polynorbornene, benzocyclobutene (BCB), polytetrafluoroethylene (PTFE), and / or silicon-based polymer dielectrics.

[0067] The AOG device 1000 may also include one or more connection structures 1070 that facilitate electrical and / or mechanical coupling between the AOG device 1000 and external circuitry / devices. In some aspects, the connection structure 1070 may be one or more of a wafer-level package (WLP) ball, a Cu pillar, a Cu pillar with solder bumps, etc. The connection structure 1070 may be coupled to a conductive layer 1046 through an opening in an insulating layer 1066. Using a via 1045 between conductive layers 1046 and 1044 and a via 1043 between conductive layer 1044 and the bottom conductive layer 1042, RF signals and optionally other signals and / or power can be conducted from the connection structure 1070 via a metallization structure 1040 and then coupled to a conductive pillar 1002 (such as a through-glass via (TGV), Cu pillar, etc.), which may also be referred to herein as TGV 1002. The conductive pillar 1002 is electrically coupled to a top conductive layer 1052, which may include one or more antennas 1054. One or more MIM capacitors 1020 may be formed at least partially of a portion of the metallization structure 1040. Similarly, one or more inductors 1030 may be formed at least partially of a portion of the metallization structure 1040 and may be planar inductors (e.g., two-dimensional (2D) spiral inductors), 2.5D inductors, or 3D inductors formed on one or more conductive layers of the metallization structure 1040. The one or more MIM capacitors 1020 and one or more inductors 1030 may be used for RF filtering and impedance matching. The metallization structure 1040 may be formed of multiple conductive layers and insulating layers.

[0068] Figure 11 The illustration shows an alternative substrate structure for an AOG device 1100 according to at least one aspect of the present disclosure. In the illustrated configuration, the photosensitive glass substrate structure is formed by a first photosensitive glass substrate 1101 and a second photosensitive glass substrate 1102. In this configuration, the optional third photosensitive glass substrate discussed above is not provided. The first photosensitive glass substrate 1101 and the second photosensitive glass substrate 1102 may each have different optical band gaps. For example, the first photosensitive glass substrate 1101 may have a wide optical band gap, and the second photosensitive glass substrate 1102 may have a narrow optical band gap. It should be understood that this structure can be used for the open cavity designs discussed above (e.g., see AOG devices 400, 500, and 700). Because one end of the cavity is open in an open cavity design, the first photosensitive glass substrate 1101 (which may be at the top or bottom depending on the orientation) can form a beam, and the second photosensitive glass substrate 1102 can form a sidewall of the cavity, with the end opposite the beam being open, as discussed above. The effects of different glass substrates with different optical band gaps on the manufacturing process will be discussed below.

[0069] To fully illustrate the various aspects of this disclosure, manufacturing methods are presented. Other manufacturing methods are also possible, and the manufacturing methods discussed are only for the purpose of helping to understand the concepts disclosed herein.

[0070] Figure 12A and Figure 12B The illustration depicts a manufacturing technique for an AOG device according to one or more aspects of this disclosure. Reference Figure 12A A portion (i) of the manufacturing process of AOG device 1200 (e.g., which may be similar to AOG device 1000) begins by providing a photosensitive glass (PSG) substrate 1207, which includes a first photosensitive glass substrate 1201 and a second photosensitive glass substrate 1203, each having a different optical bandgap. For example, the first photosensitive glass substrate 1201 may have a wide optical bandgap, and the second photosensitive glass substrate 1203 may have a narrow optical bandgap. A third photosensitive glass substrate 1205 is also provided, which in some examples has the same optical bandgap as the first photosensitive glass substrate 1201 (e.g., a wide optical bandgap). For simplicity, in the following description, the combined first PSG substrate, second PSG substrate, and third PSG substrate may be referred to as PSG substrate 1207 when each substrate is impacted.

[0071] In part (ii) of the manufacturing process of the AOG device 1200, the PSG substrate 1207 has regions defined for future components, such as regions associated with the air cavity 1212, TGV 1202, air cavity structure 1210, and etched holes 1214. In some aspects, a region may define more than one component. For example, the air cavity structure 1210 may also be used to define the TGV 1202 and the air cavity 1212. Alternatively, the TGV 1202 and the air cavity 1212 may be used to define the air cavity structure 1210. Furthermore, it should be understood that some regions defined for future components may be defined in one or more PSG substrates 1201, 1203, and / or 1205. For example, the TGV 1202 has regions defined by each of the PSG substrates 1201, 1203, and / or 1205. The PSG substrate 1207 has some or all regions defined for components that will be converted to ceramic in the future to allow for final material removal. For example, shorter wavelength UV exposure (e.g., using one or more laser beams with different focal depths) and thermal baking can cause the affected TGV 1202 region of PSG1207 to be converted into ceramic for the formation of TGV 1202 and etched holes 1214. However, since the cavity 1212 is formed primarily by removing material from the second PSG substrate 1203 having a narrow bandgap, the cavity 1212 can be defined by exposing it to longer wavelength UV light. The remaining unexposed / unconverted PSG portion of the PSG substrate 1207 can be used to form the cavity structure 1210. The cavity structure 1210 can have equal height / thickness (e.g., t 梁 The top beam 1211 and bottom beam 1213 portions (50μm to 200μm) can be made, or each beam can have a different height / thickness. Furthermore, the top beam is formed from a first PSG substrate 1201, and the bottom beam 1213 is formed from a third PSG substrate 1205. The beam height (t) supporting the plated conductive layer (e.g., Cu RDL) is... 梁 This can vary for different configurations (such as those discussed above). Additionally, as mentioned above, in some open cavity configurations, there may only be a top beam or a bottom beam. Similarly, the various cavity structures disclosed herein can be defined during the design phase.

[0072] In part (iii) of the manufacturing process of the AOG device 1200, the PSG substrate 1207 has material removed (e.g., etched away) from the TGV 1202 region, which is converted into ceramic. Specifically, material is removed from each of the PSG substrates 1201, 1203, and 1205. It should be understood that the converted ceramic material in the air cavity 1212 and the etched hole 1214 region through the air cavity structure 1210 is not removed at this stage.

[0073] refer to Figure 12BIn part (iv) of the manufacturing process of the AOG device 1200, the PSG substrate 1207 has a TGV 1202 region filled with a conductive material (e.g., Cu) to form the TGV 1202 (also referred to herein as a conductive pillar). Additionally, a top conductive layer 1252 is formed over the first PSG substrate 1201 / top beam 1211. A portion of the top conductive layer 1252 is electrically coupled to the TGV 1202. The converted ceramic material in the air cavity 1212 or the etched hole 1214 region through the air cavity structure 1210 is not removed at this stage because it provides a support structure during the formation of the top conductive layer 1252. Furthermore, it should be understood that the top conductive layer 1252 can be patterned to form antenna radiating pads together with other traces and / or pads. However, the converted ceramic material in the etched hole 1214 region can be removed after the top conductive layer 1252 is formed. Additionally, a bottom conductive layer 1242 may be formed above the third PSG substrate 1205 / bottom beam 1213. During this part of the fabrication, the AOG equipment 1200 can be flipped to facilitate handling of the bottom portion. It should be understood that a portion of the bottom conductive layer 1242 is electrically coupled to the TGV 1202. The converted ceramic material in the cavity 1212 region of the second PSG substrate 1203 is not removed at this stage because it provides a support structure during the formation of the bottom conductive layer 1242. Furthermore, it should be understood that the bottom conductive layer 1242 may be patterned to form feed lines together with other traces and / or pads.

[0074] In part (v) of the manufacturing process of the AOG device 1200, the PSG substrate 1207, particularly the second PSG substrate 1203, has a gas cavity 1212 formed by removing (e.g., by hydrofluoric acid etching) ceramic glass material from the second PSG substrate 1203. As described above, it should be understood that a plurality of etched holes 1214 can be formed between the top beam 1211 of the gas cavity structure 1210 and the gas cavity 1212 to allow various access openings to the gas cavity 1212. Ceramic material is removed from the gas cavity 1212 using one or more of the etched holes 1214, and the gas cavity 1212 is formed during removal.

[0075] It should be understood that when discussing the publicly disclosed AOG device 900... Figures 9A to 9F When comparing the manufacturing aspects discussed, the above points were summarized. Figure 12A and Figure 12B The discussion focuses on the manufacturing process, providing an explanation of processes with different PSG substrates. Therefore, in Figure 12A and Figure 12B The foregoing description will not repeat the details that are common to other parts of this disclosure (e.g., vias, metallization formation, application of insulating layers, etc.).

[0076] The AOG device 900 is an air cavity structure made of a photosensitive glass (PSG) substrate. The cavity can be formed using a UV laser with variable depth of focus, or by using a femtosecond laser capable of scanning the PSG to transform a specific area into ceramic, which is then removed by HF acid etching to form the cavity. Although the AOG device 900 is a high-performance antenna with superior gain compared to a bare glass substrate, forming the cavity across an AOG with a large cavity via laser scanning can be a slow process.

[0077] As discussed above, in the alternative configurations of AOG equipment 1000, 1100, and 1200, the air cavity and TGV structure are formed from heterojunction PSGs (HJ-PSGs) with different optical band gaps. By using HJ-PSG substrate configurations (e.g., wide optical band gap (WBG) / narrow optical band gap (NBG) or WBG / NBG / WBG), the air cavity structure can be formed using high-throughput fabrication methods (e.g., photolithography using UV light sources with different wavelengths).

[0078] It should be understood that the foregoing manufacturing processes and related discussions are provided only as a general illustration of some aspects of this disclosure and are not intended to limit this disclosure or the appended claims. Furthermore, many details of the manufacturing processes known to those skilled in the art may have been omitted or combined in the process section of the summary of the invention to facilitate understanding of the disclosed aspects, without presenting every detail and / or all possible process variations in detail. Moreover, it should be understood that the configurations and descriptions shown are provided only to aid in interpreting the various aspects disclosed herein. For example, the number and location of MIM capacitors and / or inductors, the metallization structure may have more or less conductive and insulating layers, the orientation and size of the cavities, whether they are formed by multiple cavities, whether they are closed or open, and other aspects may vary due to application-specific design features such as the number of antennas, antenna type, frequency range, power, etc. Therefore, the foregoing illustrative examples and associated drawings should not be construed as limiting the aspects disclosed herein and claimed.

[0079] According to various aspects disclosed herein, at least one aspect includes an antenna-on-glass (AOG) device (e.g., 100, 400, 500, 600, 700, 900, 1000, 1100, 1200) having a gas cavity (e.g., 112, 212, 412, 512, 712, 912, 1012, 1212) at least partially formed in a photosensitive glass substrate (e.g., 101, 901, 1207). The gas cavity structure at least partially surrounds the gas cavity, and the gas cavity structure (e.g., 110, 210, 410, 510, 710, 910, 1010, 1210) is at least partially formed by the photosensitive glass substrate. The antenna (e.g., 154, 754, 1054) is partially formed by a top conductive layer (e.g., 152, 252, 452, 552, 752, 952, 1052) disposed above the top surface of the air cavity structure and at least partially overlapping the air cavity. A metallized structure (e.g., 140, 740, 940) is provided having a bottom conductive layer (e.g., 142, 242, 642, 742, 942) disposed on the bottom surface of the air cavity structure, wherein the bottom conductive layer is electrically coupled to the top metallized layer through conductive pillars (e.g., 102, 202, 702, 902) disposed through the photosensitive glass substrate. Among the various technical advantages provided in the disclosed aspects, at least in some aspects, by providing a low Dk / Df glass platform, the air cavity provided in the photosensitive glass substrate allows for improved antenna performance. This low Dk / Df glass platform may also include integrated MIM capacitors and inductors to provide on-package RF filtering and impedance matching, which is not available in conventional designs.

[0080] Furthermore, one or more aspects disclosed herein provide high-performance antennas for use with low Dk / Df glass platforms (wafers / panels) and established processing technologies. The Df of the photosensitive glass is 0.0002, and the Df of the gas cavity is 0.0. Antenna matching and filtering are feasible using MIM capacitor and inductor integration to reduce spurious emissions and meet millimeter-wave design specifications, where high Q filtering is desired at the antenna package, which can be provided by the aspects disclosed herein.

[0081] In addition, one or more aspects disclosed herein provide improved performance for superior to conventional designs. For example, antenna gain can be improved by 0.3 dB to 0.5 dB compared to conventional designs. Substrate trace loss can be improved by 0.3 dB to 0.5 dB compared to conventional designs. Antenna filtering can be improved by 0.5 dB compared to conventional designs. Overall system performance (e.g., gain + trace + filtering) is improved by approximately 1.0 dB to 1.5 dB.

[0082] As should be understood from the foregoing, this article discloses various methods for manufacturing AOG devices. Figure 13The illustration shows a flowchart of a method 1300 for manufacturing an antenna-on-glass (AOG) device. The method may include forming a gas cavity in a photosensitive glass substrate in block 1302. In block 1304, the method continues to form a gas cavity structure that at least partially surrounds the gas cavity, wherein the gas cavity structure is at least partially formed by the photosensitive glass substrate. In block 1306, the method continues to form an antenna from a portion of a top conductive layer disposed above a top surface of the gas cavity structure, wherein the antenna at least partially overlaps the gas cavity. In block 1308, the method continues to form a metallization structure having a bottom conductive layer disposed on a bottom surface of the gas cavity structure, wherein the bottom conductive layer is electrically coupled to the top conductive layer via conductive pillars disposed through the photosensitive glass substrate.

[0083] Therefore, it should be understood from the foregoing disclosure that additional processes for making the various aspects of the present disclosure will be apparent to those skilled in the art, and that a literal reproduction of the processes discussed above is not provided or illustrated in the included drawings.

[0084] Figure 14 The illustration shows exemplary mobile devices according to some examples of this disclosure. Reference now is made to... Figure 14 This diagram depicts a block diagram of a mobile device configured according to exemplary aspects, and the mobile device is generally designated as mobile device 1400. In some aspects, mobile device 1400 may be configured as a wireless communication device. As shown in the diagram, mobile device 1400 includes a processor 1401. Processor 1401 is shown as including an instruction pipeline 1412, a buffer processing unit (BPU) 1408, a branch instruction queue (BIQ) 1411, and a throttle 1410, as is known in the art. For clarity, other well-known details of these blocks (e.g., counters, entries, confidence fields, weighted sums, comparators, etc.) are omitted from this view of processor 1401. Processor 1401 may be communicatively coupled to memory 1432 via a link, which may be a die-to-die or chip-to-chip link. Mobile device 1400 also includes a display 1428 and a display controller 1426, wherein display controller 1426 is coupled to processor 1401 and display 1428.

[0085] In some respects, Figure 14 It may include an encoder / decoder (codec) 1434 (e.g., an audio and / or voice codec) coupled to processor 1401; a speaker 1436 and a microphone 1438 coupled to codec 1434; and a wireless circuit 1440 (which may include a modem, RF circuitry, filters, etc.) coupled to antenna 1442 and processor 1401. Antenna 1442 may be one or more on-glass antenna devices as disclosed herein, or may be configured to utilize the various aspects disclosed herein.

[0086] In certain aspects, where one or more of the conditions in the boxes above are present, the processor 1401, display controller 1426, memory 1432, codec 1234, and wireless circuitry 1440 may be included in a system-in-package or system-on-a-chip device 1422, which may be implemented wholly or partially using flip-chip technology. Input devices 1430 (e.g., a physical or virtual keyboard), power supply 1444 (e.g., a battery), display 1428, speaker 1436, microphone 1438, antenna 1442, and power supply 1444 may be external to the system-on-a-chip device 1422 and may be coupled to components of the system-on-a-chip device 1422, such as interfaces or controllers.

[0087] It should be noted that, although Figure 14 Mobile devices are depicted, but the various components shown can also be integrated into set-top boxes, music players, video players, entertainment units, navigation devices, personal digital assistants (PDAs), fixed-location data units, computers, laptops, tablets, communication devices, mobile phones, or other similar devices.

[0088] Figure 15 The illustrations depict various electronic devices that can be integrated with any of the aforementioned on-glass antenna devices according to various aspects of this disclosure. For example, mobile phone device 1502, laptop computer device 1504, and fixed location terminal device 1506 can each generally be considered as user equipment (UE) and may include the on-glass antenna device 1500 as described herein. Figure 15 The devices 1502, 1504, and 1506 shown are merely exemplary. Other electronic devices may also include the on-glass antenna device 1500, including but not limited to a group of devices (e.g., electronic devices) that include mobile devices, handheld personal communication system (PCS) units, portable data units such as personal digital assistants, GPS-enabled devices, navigation devices, set-top boxes, music players, video players, entertainment units, fixed location data units such as instrument reading devices, communication devices, smartphones, tablets, computers, wearable devices, servers, routers, electronic devices implemented in motor vehicles (e.g., autonomous vehicles), Internet of Things (IoT) devices, or any other device that stores or retrieves data or computer instructions or any combination thereof.

[0089] The aforementioned disclosed devices and functions can be designed and configured into computer files (e.g., RTL, GDSII, GERBER, etc.) stored on a computer-readable medium. Some or all of these files can be provided to a manufacturing processor who manufactures equipment based on such files. The resulting product may include a semiconductor wafer, which is then diced into semiconductor dies and packaged into an antenna-on-glass device. The antenna-on-glass device can then be used in the devices described herein.

[0090] The following provides an overview of embodiments of this disclosure:

[0091] Example 1: An on-glass antenna device comprising: a gas cavity at least partially formed in a photosensitive glass substrate. The antenna further comprises a gas cavity structure at least partially surrounding the gas cavity, wherein the gas cavity structure is at least partially formed by the photosensitive glass substrate. The antenna further comprises an antenna formed from a portion of a top conductive layer disposed above a top surface of the gas cavity structure, wherein the antenna at least partially overlaps with the gas cavity. The antenna further comprises a metallization structure having a bottom conductive layer disposed on a bottom surface of the gas cavity structure, wherein the bottom conductive layer is electrically coupled to the top conductive layer via conductive pillars disposed through the photosensitive glass substrate.

[0092] Example 2: The on-glass antenna device as described in Example 1 further includes: an etched hole that extends into the air cavity through a portion of the air cavity structure.

[0093] Example 3: The on-glass antenna device as described in Example 2, wherein the portion is on the top beam of the air cavity structure.

[0094] Example 4: The glass-above antenna device of Examples 1 to 3 further includes a top insulating layer, wherein the top insulating layer is disposed above the top conductive layer.

[0095] Example 5: The on-glass antenna device as described in Example 4, wherein the top insulating layer is formed of at least one of silicon dioxide (SiO2), an organic polymer dielectric, polyimide (PI), polynorbornene, benzocyclobutene (BCB), polytetrafluoroethylene (PTFE), or a silicone-based polymer dielectric.

[0096] Example 6: The on-glass antenna device as described in Examples 1 to 5, wherein the top conductive layer and the bottom conductive layer may each be formed of at least one of copper (Cu), silver (Ag), gold (Au), aluminum (Al), tungsten (W), nickel (Ni), or combinations thereof.

[0097] Example 7: An on-glass antenna device as described in Examples 1 to 6, wherein the conductive post is a through-glass via (TGV).

[0098] Example 8: The on-glass antenna device as described in Examples 1 to 7 further includes a metal-insulator-metal (MIM) capacitor.

[0099] Example 9: An on-glass antenna device as described in Example 8, wherein at least one conductive layer in a metallized structure is used to form a MIM capacitor.

[0100] Example 10: The on-glass antenna device as described in Example 9, wherein a bottom conductive layer with a metallized structure is used to form a MIM capacitor.

[0101] Example 11: The on-glass antenna device as described in Example 8 further includes an inductor.

[0102] Example 12: An on-glass antenna device as described in Example 11, wherein at least one conductive layer in a metallized structure is used to form an inductor.

[0103] Example 13: An on-glass antenna device as described in Example 12, wherein the inductor is one of a planar inductor, a 2.5D inductor, or a 3D inductor.

[0104] Example 14: An on-glass antenna device as described in Example 11, wherein the MIM capacitor and inductor are configured as at least one of a filter or an impedance matching circuit.

[0105] Example 15: An on-glass antenna device as described in Examples 1 to 14, wherein the air cavity structure substantially surrounds the air cavity.

[0106] Example 16: The on-glass antenna device as described in Examples 1 to 15, wherein the air cavity structure is formed by a plurality of air cavities, and each air cavity is internally connected by one or more cavity vents.

[0107] Example 17: An on-glass antenna device as described in Examples 1 to 14, wherein the air cavity structure has an open side.

[0108] Example 18: An on-glass antenna device as described in Example 17, wherein the opening side is the top side of the air cavity structure and a substantially vertical beam is formed in the air cavity to help support the top conductive layer.

[0109] Example 19: The on-glass antenna device as described in Example 17, wherein the opening side is the bottom side of the air cavity structure.

[0110] Example 20: The on-glass antenna device as described in Example 19 further includes a bottom portion of a cavity structure, wherein the bottom portion is a second glass material.

[0111] Example 21: The on-glass antenna device as described in Example 20 further includes a bonding layer disposed between a photosensitive glass substrate and a second glass material forming the bottom portion of the air cavity structure.

[0112] Example 22: An on-glass antenna device as described in Example 20, wherein the photosensitive glass substrate and the second glass material have different dielectric constants (Dk) and loss tangents (Df).

[0113] Example 23: An on-glass antenna device as described in Example 20, wherein conductive pillars extend through a second glass material forming a bottom portion of a cavity structure.

[0114] Example 24: The on-glass antenna device as described in Example 20, wherein a bottom portion conductive layer is formed on the bottom surface of the bottom portion of the air cavity structure.

[0115] Example 25: The on-glass antenna device as described in Examples 1 to 16 further includes a top beam of a cavity structure, wherein the top beam is formed of a second material and the cavity structure substantially surrounds the cavity.

[0116] Example 26: The on-glass antenna device as described in Example 25, wherein the second material forming the top beam is a low Dk and Df dielectric material.

[0117] Example 27: An on-glass antenna device as described in Example 25, wherein the second material is at least one of silicon dioxide (SiO2) or benzocyclobutene (BCB).

[0118] Example 28: The on-glass antenna device as described in Examples 1 to 27 further includes a plurality of connection structures configured to electrically couple the metallized structure to one or more components outside the on-glass antenna device.

[0119] Example 29: The on-glass antenna device as described in Example 28 further includes a plurality of connection structures configured to electrically couple the metallized structure to one or more components outside the on-glass antenna device.

[0120] Example 30: An on-glass antenna device as in Examples 1 to 29, wherein the on-glass antenna device is incorporated into a device selected from the group consisting of: music players, video players, entertainment units, navigation devices, communication devices, mobile devices, mobile phones, smartphones, personal digital assistants, fixed-location terminals, tablet computers, computers, wearable devices, Internet of Things (IoT) devices, laptop computers, servers, and devices in motor vehicles.

[0121] Example 31: The on-glass antenna device as described in Examples 1 to 16, wherein the photosensitive glass substrate includes: a first photosensitive glass substrate; and a second photosensitive glass substrate.

[0122] Example 32: The on-glass antenna device as described in Example 31, wherein the air cavity structure includes:

[0123] A first beam is formed from a first photosensitive glass substrate; and a sidewall is formed from a second photosensitive glass substrate, wherein the sidewall is disposed from the first beam.

[0124] Example 33: The on-glass antenna device as described in Example 32, wherein the air cavity structure includes:

[0125] The second beam has a sidewall located between the first and second beams.

[0126] Example 34: An on-glass antenna device as described in Example 33, wherein the second beam is formed from a third photosensitive glass substrate.

[0127] Example 35: An antenna-on-glass device as described in Examples 31 to 34, wherein the first photosensitive glass substrate and the second photosensitive glass substrate each have different optical band gaps.

[0128] Example 36: An antenna-on-glass device as described in Example 35, wherein a first photosensitive glass substrate has a wide optical bandgap and a second photosensitive glass substrate has a narrow optical bandgap.

[0129] Example 37: An antenna-on-glass device as described in Example 36, wherein a first photosensitive glass substrate has an optical bandgap of 5.5 electron volts (eV) and a second photosensitive glass substrate has an optical bandgap of 2.5 eV.

[0130] Example 38: The on-glass antenna device as described in Example 31, wherein the air cavity structure further includes a third photosensitive glass substrate, wherein the first photosensitive glass substrate and the third photosensitive glass substrate each have the same optical bandgap.

[0131] Example 39: An on-glass antenna device as described in Examples 31 to 38, wherein the air cavity structure has an open side.

[0132] Example 40: An on-glass antenna device as described in Example 38, wherein the opening side is the top side of the air cavity structure and a substantially vertical beam is formed in the air cavity to help support the top conductive layer.

[0133] Example 41: A method for manufacturing an antenna device above a glass, the method comprising: forming a gas cavity in a photosensitive glass substrate; forming a gas cavity structure at least partially surrounding the gas cavity, wherein the gas cavity structure is at least partially formed by the photosensitive glass substrate; forming an antenna by a portion of a top conductive layer disposed above a top surface of the gas cavity structure, wherein the antenna at least partially overlaps the gas cavity; and forming a metallization structure having a bottom conductive layer disposed above a bottom surface of the gas cavity structure, wherein the bottom conductive layer is electrically coupled to the top conductive layer via conductive pillars disposed through the photosensitive glass substrate.

[0134] Example 42: The method of Example 41 further includes: forming one or more etched holes that extend through a portion of the air cavity structure into the air cavity.

[0135] Example 43: The method of Example 42, wherein forming a gas cavity includes: defining a cavity region in a photosensitive glass substrate; converting a glass material in the cavity region into a ceramic material; and removing the ceramic material to form a gas cavity.

[0136] Example 44: The method as described in Example 43, wherein ceramic material is removed through one or more etched holes by an etching process.

[0137] Example 45: The method as described in Example 43, wherein a glass material in a cavity region is converted into a ceramic material by ultraviolet (UV) exposure using laser beams with different focal depths.

[0138] Example 46: The method as described in Examples 41 to 45, wherein the photosensitive glass substrate comprises: a first photosensitive glass substrate; and a second photosensitive glass substrate.

[0139] Example 47: The method as described in Example 46, wherein the air cavity structure includes: a first beam formed of a first photosensitive glass substrate; and a sidewall formed of a second photosensitive glass substrate, wherein the sidewall is disposed from the first beam.

[0140] Example 48: The method as described in Example 46, wherein the first photosensitive glass substrate and the second photosensitive glass substrate each have different optical band gaps.

[0141] Example 49: The method as described in Example 48, wherein the first photosensitive glass substrate has a wide optical bandgap and the second photosensitive glass substrate has a narrow optical bandgap.

[0142] Example 50: The method as described in Example 46, wherein the air cavity structure further includes a third photosensitive glass substrate, wherein the first photosensitive glass substrate and the third photosensitive glass substrate each have the same optical bandgap.

[0143] It should be understood that the aspects disclosed herein can be described as functional equivalents of structures, materials, and / or devices as described and / or understood by those skilled in the art. For example, in one aspect, a device may include means for performing the various functions discussed above. It should be understood that the foregoing aspects are provided by way of example only, and the claimed aspects are not limited to the specific references and / or descriptions cited as examples.

[0144] Figures 1 to 15 One or more components, processes, features, and / or functions shown may be rearranged and / or combined into a single component, process, feature, or function, or incorporated into several components, processes, or features. Additional elements, components, processes, and / or functions may be added without departing from this disclosure. It should also be noted that in this disclosure… Figures 1 to 15 The corresponding descriptions are not limited to dies and / or ICs. In some implementations, according to the various aspects disclosed herein, Figures 1 to 15 The corresponding descriptions can be used to manufacture, create, provide, and / or produce integrated devices including antenna-on-glass devices. In some implementations, the device may include a die, integrated device, die package, integrated circuit (IC), device package, integrated circuit (IC) package, wafer, semiconductor device, package-on-package (PoP) device, and / or interposer.

[0145] As used herein, the terms “user equipment” (or “UE”), “user device,” “user terminal,” “client device,” “communication device,” “wireless device,” “wireless communication device,” “handheld device,” “mobile device,” “mobile terminal,” “mobile station,” “phone,” “access terminal,” “subscriber device,” “subscriber terminal,” “subscriber station,” “terminal,” and variations thereof may interchangeably refer to any suitable mobile or fixed device capable of receiving wireless communication and / or navigation signals. These terms include, but are not limited to, music players, video players, entertainment units, navigation devices, communication devices, smartphones, personal digital assistants, fixed-location terminals, tablets, computers, wearable devices, laptops, servers, automotive equipment in motor vehicles, and / or other types of portable electronic devices that are typically carried by a person and / or have communication capabilities (e.g., wireless, cellular, infrared, short-range radio, etc.). These terms are also intended to include devices that communicate with another device that can receive wireless communication and / or navigation signals, such as via short-range wireless, infrared, wired connections, or other connections, regardless of whether satellite signal reception, auxiliary data reception, and / or location-related processing occur on that device or on the other device. Furthermore, these terms are intended to encompass all devices (including wireless and wired communication devices) capable of communicating with the core network via the Radio Access Network (RAN), and through the core network, the UE can connect to external networks such as the Internet and other UEs. Of course, other mechanisms for connecting to the core network and / or the Internet are also possible for the UE, such as via a wired access network, a Wireless Local Area Network (WLAN) (e.g., based on IEEE 802.11, etc.), etc. The UE can be implemented by any of a variety of devices (including but not limited to printed circuit (PC) cards, compact flash devices, external or internal modems, wireless or wired telephones, smartphones, tablets, tracking devices, asset tags, etc.). The communication link through which the UE sends signals to the RAN is referred to as an uplink channel (e.g., reverse traffic channel, reverse control channel, access channel, etc.). The communication link through which the RAN sends signals to the UE is referred to as a downlink or forward link channel (e.g., paging channel, control channel, broadcast channel, forward traffic channel, etc.). As used herein, the term traffic channel (TCH) can refer to an uplink / reverse or downlink / forward traffic channel.

[0146] Wireless communication between electronic devices can be based on various technologies, such as Code Division Multiple Access (CDMA), W-CDMA, Time Division Multiple Access (TDMA), Frequency Division Multiple Access (FDMA), Orthogonal Frequency Division Multiplexing (OFDM), Global System for Mobile Communications (GSM), 3GPP Long Term Evolution (LTE), 5G New Radio, Bluetooth (BT), Bluetooth Low Energy (BLE), IEEE 802.11 (WiFi), and IEEE 802.15.4 (Zigbee / Thread), or other protocols that can be used in wireless communication networks or data communication networks. Bluetooth Low Energy (also known as Bluetooth LE, BLE, and Bluetooth Smart) is a wireless personal area network (PAN) technology designed and marketed by the Bluetooth Special Interest Group (SIG) to provide significantly reduced power consumption and cost while maintaining similar communication range. With the adoption of Bluetooth Core Specification version 4.0, BLE was incorporated into the main Bluetooth standard in 2010 and updated in Bluetooth 5.

[0147] As used herein, the term “exemplary” means “serving as an example, instance, or illustration.” Any detail described herein as “exemplary” should not be construed as superior to other examples. Similarly, the term “example” does not imply that all examples include the features, advantages, or modes of operation discussed. Furthermore, specific features and / or structures may be combined with one or more other features and / or structures. Moreover, at least a portion of the apparatus described herein can be configured to perform at least a portion of the methods described herein.

[0148] It should be noted that the terms “connection,” “coupled,” or any variation thereof mean any direct or indirect connection or coupling between elements, and may include the presence of an intermediate element between two elements that are “connected” or “coupled” together via an intermediate element, unless the connection is explicitly disclosed as a direct connection.

[0149] Any references to elements in this document using names such as "first," "second," etc., do not limit the number and / or order of these elements. Rather, these names are used as a convenient way to distinguish two or more elements and / or instances of elements. Furthermore, unless otherwise stated, a group of elements may include one or more elements.

[0150] Those skilled in the art will understand that information and signals can be represented using any of a variety of different techniques and methods. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be mentioned throughout the above description can be represented by voltage, current, electromagnetic waves, magnetic fields or particles, light fields or particles, or any combination thereof.

[0151] Nothing stated or illustrated in this application is intended to offer any component, action, feature, benefit, advantage, or equivalent to the public, whether or not such component, action, feature, benefit, advantage, or equivalent is stated in the claims.

[0152] In the specific embodiments described above, it can be seen that different features are combined together in the examples. This disclosure should not be construed as an intention to have more features than expressly mentioned in the corresponding claims. Rather, this disclosure may include all features of fewer than a single disclosed example. Therefore, the following claims should be considered as included in the specification, wherein each claim may stand alone as a separate example. Although each claim may stand alone as a separate example, it should be noted that while dependent claims may express a specific combination with one or more claims in the claims, other examples may also contain or include combinations of the subject matter of the dependent claim with any other dependent claim, or any feature combined with other dependent and independent claims. Such combinations are presented herein unless expressly stated that no particular combination is intended to be used. Furthermore, features of a claim may be included in any other independent claim, even if that claim is not directly dependent on that independent claim.

[0153] It should also be noted that the methods, systems and apparatuses disclosed in the specification or claims may be implemented by devices including means for performing the corresponding actions and / or functions of the disclosed methods.

[0154] Furthermore, in some examples, a single action can be subdivided into multiple sub-actions or include multiple sub-actions. Such sub-actions can be included in the disclosure of a single action and are part of the disclosure of the single action.

[0155] While the foregoing disclosure illustrates illustrative examples of this disclosure, it should be noted that various changes and modifications may be made herein without departing from the scope of this disclosure as defined by the appended claims. The functions and / or actions of the method claims according to the examples of the disclosure described herein do not need to be performed in any particular order. Furthermore, well-known elements will not be described in detail or may be omitted so as not to obscure the relevant details of the aspects and examples disclosed herein. Moreover, although elements of this disclosure may be described or claimed in the singular, plural forms are also contemplated unless expressly stated as limited to the singular.

Claims

1. A glass-on-antenna device, comprising: An air cavity is formed, at least partially, in the photosensitive glass substrate; A cavity structure, at least partially surrounding the cavity, wherein the cavity structure is at least partially formed by the photosensitive glass substrate; An antenna is formed from a portion of a top conductive layer disposed on the top surface of the air cavity structure, the portion of the top conductive layer extending partially above the air cavity, wherein the antenna at least partially overlaps the air cavity; as well as A metallized structure having a bottom conductive layer disposed on the bottom surface of the air cavity structure, wherein the bottom conductive layer is electrically coupled to the top conductive layer through conductive pillars disposed through the photosensitive glass substrate.

2. The on-glass antenna device according to claim 1, further comprising: An etched hole extends through a portion of the air cavity structure into the air cavity.

3. The glass-on-antenna device according to claim 2, wherein the portion is on the top beam of the air cavity structure.

4. The on-glass antenna device according to claim 1 further includes a top insulating layer, wherein the top insulating layer is disposed above the top conductive layer.

5. The on-glass antenna device according to claim 4, wherein the top insulating layer is formed of at least one of silicon dioxide (SiO2), an organic polymer dielectric, polyimide (PI), polynorbornene, benzocyclobutene (BCB), polytetrafluoroethylene (PTFE), or a silicon-based polymer dielectric.

6. The on-glass antenna device according to claim 1, wherein the top conductive layer and the bottom conductive layer can each be formed of at least one of copper (Cu), silver (Ag), gold (Au), aluminum (Al), tungsten (W), nickel (Ni), or combinations thereof.

7. The on-glass antenna device according to claim 1, wherein the conductive post is a glass through-hole TGV.

8. The on-glass antenna device according to claim 1, further comprising: Metal-Insulator-Metal (MIM) Capacitor.

9. The on-glass antenna device of claim 8, wherein the MIM capacitor is formed using at least one conductive layer in the metallized structure.

10. The on-glass antenna device of claim 9, wherein at least the bottom conductive layer of the metallized structure is used to form the MIM capacitor.

11. The on-glass antenna device according to claim 8, further comprising: Inductor.

12. The on-glass antenna device of claim 11, wherein at least one conductive layer in the metallization structure is used to form the inductor.

13. The on-glass antenna device according to claim 12, wherein the inductor is one of a planar inductor, a 2.5D inductor, or a 3D inductor.

14. The on-glass antenna device of claim 11, wherein the MIM capacitor and the inductor are configured to form at least one of a filter or an impedance matching circuit.

15. The on-glass antenna device of claim 1, wherein the air cavity structure substantially surrounds the air cavity.

16. The on-glass antenna device according to claim 1, wherein the air cavity structure is formed by a plurality of air cavities, and each air cavity is connected through one or more cavity vents.

17. The on-glass antenna device according to claim 1, wherein the air cavity structure has an open side.

18. The on-glass antenna device of claim 17, wherein the opening side is the top side of the air cavity structure and a substantially vertical beam is formed in the air cavity to help support the top conductive layer.

19. The on-glass antenna device according to claim 17, wherein the opening side is the bottom side of the air cavity structure.

20. The on-glass antenna device according to claim 1, further comprising: The bottom portion of the air cavity structure, wherein the bottom portion includes a second glass material.

21. The on-glass antenna device according to claim 20, further comprising: A bonding layer, wherein the bonding layer is disposed between the photosensitive glass substrate and the second glass material.

22. The on-glass antenna device according to claim 20, wherein the photosensitive glass substrate and the second glass material have different dielectric constants Dk and loss tangents Df.

23. The on-glass antenna device of claim 20, wherein the conductive post extends through the second glass material.

24. The on-glass antenna device of claim 20, wherein the bottom portion conductive layer is formed on the bottom surface of the bottom portion of the air cavity structure.

25. The on-glass antenna device according to claim 1, further comprising: The top beam of the air cavity structure, wherein the top beam is formed of a second material and the air cavity structure substantially surrounds the air cavity.

26. The on-glass antenna device of claim 25, wherein the second material forming the top beam is a low Dk and Df dielectric material.

27. The on-glass antenna device according to claim 25, wherein the second material is at least one of silicon dioxide (SiO2) or benzocyclobutene (BCB).

28. The on-glass antenna device according to claim 1, further comprising: Multiple connection structures are configured to electrically couple the metallized structure to one or more components outside the on-glass antenna device.

29. The on-glass antenna device of claim 1, wherein the on-glass antenna device is incorporated into a device selected from the group consisting of: music players, video players, entertainment units, navigation devices, communication devices, mobile devices, mobile phones, smartphones, personal digital assistants, fixed-location terminals, tablet computers, computers, wearable devices, Internet of Things (IoT) devices, laptop computers, servers, and devices in motor vehicles.

30. The on-glass antenna device according to claim 1, wherein the photosensitive glass substrate comprises: First photosensitive glass substrate; as well as Second photosensitive glass substrate.

31. The on-glass antenna device according to claim 30, wherein the air cavity structure comprises: The first beam is formed from the first photosensitive glass substrate; as well as The sidewall is formed of the second photosensitive glass substrate, wherein the sidewall is coupled to the first beam.

32. The on-glass antenna device according to claim 31, wherein the air cavity structure comprises: The second beam, wherein the sidewall is disposed between the first beam and the second beam.

33. The on-glass antenna device according to claim 32, wherein the second beam is formed from a third photosensitive glass substrate.

34. The on-glass antenna device according to claim 30, wherein the first photosensitive glass substrate and the second photosensitive glass substrate each have different optical band gaps.

35. The on-glass antenna device according to claim 34, wherein the first photosensitive glass substrate has a larger optical bandgap than the second photosensitive glass substrate.

36. The on-glass antenna device of claim 35, wherein the first photosensitive glass substrate has an optical bandgap of 5.5 eV and the second photosensitive glass substrate has an optical bandgap of 2.5 eV.

37. The on-glass antenna device according to claim 30, wherein the photosensitive glass substrate further comprises: The third photosensitive glass substrate, wherein the first photosensitive glass substrate and the third photosensitive glass substrate each have the same optical band gap.

38. A method for manufacturing an on-glass antenna device, the method comprising: An air cavity is formed in the photosensitive glass substrate; A cavity structure is formed that at least partially surrounds the cavity, wherein the cavity structure is at least partially formed by the photosensitive glass substrate; An antenna is formed by a portion of a top conductive layer disposed on the top surface of the air cavity structure, the portion of the top conductive layer extending partially above the air cavity, wherein the antenna at least partially overlaps the air cavity; as well as A metallized structure is formed, the metallized structure having a bottom conductive layer disposed on the bottom surface of the air cavity structure, wherein the bottom conductive layer is electrically coupled to the top conductive layer through conductive pillars disposed through the photosensitive glass substrate.

39. The method of claim 38, further comprising: One or more etched holes are formed, which extend through a portion of the air cavity structure into the air cavity.

40. The method of claim 39, wherein forming the air cavity comprises: A cavity region is defined in the photosensitive glass substrate; The glass material in the cavity region is transformed into a ceramic material; as well as The ceramic material is removed to form the air cavity.

41. The method of claim 40, wherein the ceramic material is removed through the one or more etched holes by an etching process.

42. The method of claim 40 further comprises converting the glass material in the cavity region into the ceramic material by using ultraviolet (UV) exposure with laser beams having different focal depths.

43. The method of claim 38, wherein the photosensitive glass substrate comprises: First photosensitive glass substrate; as well as Second photosensitive glass substrate.

44. The method of claim 43, wherein the air cavity structure comprises: The first beam is formed from the first photosensitive glass substrate; as well as The sidewall is formed of the second photosensitive glass substrate, wherein the sidewall is coupled to the first beam.

45. The method of claim 43, wherein the first photosensitive glass substrate and the second photosensitive glass substrate each have different optical band gaps.

46. ​​The method of claim 45, wherein the first photosensitive glass substrate has a larger optical band gap than the second photosensitive glass substrate.

47. The method of claim 46, wherein the photosensitive glass substrate further comprises: The third photosensitive glass substrate, wherein the first photosensitive glass substrate and the third photosensitive glass substrate each have the same optical band gap.

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