Process chamber for titanium nitride film deposition and method for titanium nitride film deposition

Abstract

The application provides a process chamber and a titanium nitride film deposition method. A target material containing titanium is arranged on the top opening of the process chamber. A supporting assembly is arranged in the process chamber and can be lifted. An auxiliary chamber is connected to the process chamber. A shielding component is detachably arranged on a transmission mechanism. The transmission mechanism selectively places one of a wafer or the shielding component on the supporting assembly and places the other in the auxiliary chamber. When the process chamber performs a barrier layer deposition process, the transmission mechanism transfers the shielding component to the supporting assembly and transfers the wafer to the auxiliary chamber to perform a first stage of barrier layer deposition. After the target material forms a substance meeting the requirements of the titanium nitride process, the transmission mechanism transfers the wafer to the supporting assembly and transfers the shielding component to the auxiliary chamber to perform a second stage of barrier layer deposition. The application can avoid the deposition of a transition layer on the wafer, thereby increasing the thickness of the barrier layer and improving the barrier effect.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, in particular to a process chamber for titanium nitride film deposition and a titanium nitride film deposition method. BACKGROUND

[0002] Aluminum interconnection process refers to a process of depositing aluminum (Al) film on a wafer and forming aluminum interconnection lines through photolithography technology to connect elements spaced apart into a required circuit. Depositing aluminum film is usually performed at a temperature of about 270°C. In order to prevent aluminum from penetrating into a dielectric layer (SiO2) at high temperature to cause spike phenomenon, a barrier layer is usually deposited on the wafer before depositing the aluminum film.

[0003] One existing barrier layer deposition method is to place a wafer in a process chamber, first introduce argon (Ar) into the process chamber and ionize the argon to form plasma to bombard a titanium (Ti) target to deposit a titanium film on the wafer as an adhesion layer, then introduce nitrogen (N2) into the process chamber and ionize the nitrogen to form plasma to react with the titanium target to form titanium nitride on the surface of the titanium target, and use the plasma ionized by the argon to bombard the titanium target to deposit a titanium nitride film on the adhesion layer. The titanium nitride film serves as a barrier layer, and the adhesion layer is used to improve the stress of the titanium nitride film to avoid peeling of the titanium nitride film due to large stress of the titanium nitride.

[0004] However, the titanium nitride film formed by the above-mentioned existing barrier layer deposition method includes two parts, one part is a transition layer formed near the titanium film at the initial stage of deposition of the titanium nitride film, and the other part is a barrier layer formed away from the titanium film at the later stage of deposition of the titanium nitride film and located on the transition layer and capable of effective blocking. The transition layer is less stable than the barrier layer and cannot effectively block, which causes the barrier layer to be relatively thin and affects the blocking effect. SUMMARY

[0005] The present application aims to at least solve one of the technical problems existing in the prior art, and provides a process chamber for titanium nitride film deposition and a titanium nitride film deposition method, which can avoid deposition of a transition layer on a wafer to increase the thickness of a barrier layer and improve the blocking effect.

[0006] To achieve the purpose of the present application, a process chamber for titanium nitride film deposition is provided, which comprises a process chamber body, a target and a bearing assembly. The target is arranged on the top opening of the process chamber body and contains titanium element. The bearing assembly is arranged in the process chamber body and can be lifted and lowered. The process chamber further comprises:

[0007] a transmission mechanism, a shielding component and an auxiliary cavity, the auxiliary cavity being in communication with the process cavity;

[0008] the shielding component is detachably arranged on the transmission mechanism;

[0009] the transmission mechanism is used for selectively placing one of the wafer or the shielding component on the carrier assembly and placing the other one in the auxiliary cavity;

[0010] when the process cavity performs a barrier layer deposition process, the transmission mechanism transfers the shielding component to the carrier assembly and transfers the wafer to the auxiliary cavity to perform a first stage of barrier layer deposition; after the target material is formed with a substance meeting the requirements of a titanium nitride process, the transmission mechanism transfers the wafer to the carrier assembly and transfers the shielding component to the auxiliary cavity to perform a second stage of barrier layer deposition process.

[0011] Optionally, the auxiliary cavity comprises a first auxiliary cavity and a second auxiliary cavity, and the transmission mechanism comprises a first transmission mechanism and a second transmission mechanism, the first auxiliary cavity being in communication with the process cavity, and the first transmission mechanism being used for transferring the shielding component between the first auxiliary cavity and the carrier assembly;

[0012] the second auxiliary cavity being in communication with the process cavity, and the second transmission mechanism being used for transferring the wafer between the second auxiliary cavity and the carrier assembly.

[0013] Optionally, the first auxiliary cavity and the second auxiliary cavity are oppositely arranged on two sides of the process cavity.

[0014] Optionally, the first transmission mechanism comprises a first carrier component and a first driving component, wherein the first carrier component is used for carrying the shielding component;

[0015] the first driving component is connected with the process cavity and connected with the first carrier component, and is used for driving the first carrier component to rotate into the first auxiliary cavity or the process cavity through a communication position of the first auxiliary cavity and the process cavity in cooperation with the lifting of the carrier assembly, so as to transmit the shielding component to the first carrier component or the carrier assembly in cooperation with the lifting of the carrier assembly.

[0016] Optionally, the first bearing component comprises a first cantilever, and the first driving component comprises a first driving member and a first transmission member, wherein the first cantilever is used for bearing the shielding component; the first transmission member is arranged in the process cavity and connected with one end of the first cantilever.

[0017] The first driving member is arranged outside the process cavity and connected with the first transmission member, and is used for driving the first transmission member to rotate, so as to drive the first cantilever to pass through the communication position of the first auxiliary cavity and the process cavity and rotate into the first auxiliary cavity or the process cavity.

[0018] Optionally, the second transmission mechanism comprises a second bearing component and a second driving component, wherein the second bearing component is used for bearing the wafer.

[0019] The second driving component is connected with the second auxiliary cavity and the second bearing component, and is used for driving the second bearing component to pass through the communication position of the second auxiliary cavity and the process cavity and extend into the process cavity or retract into the second auxiliary cavity in cooperation with the lifting of the bearing assembly, so as to transmit the wafer to the second bearing component or the bearing assembly in cooperation with the lifting of the bearing assembly.

[0020] Optionally, the second bearing component comprises a second cantilever, and the second driving component comprises a second driving member, a first transmission arm and a second transmission arm, wherein the second cantilever is used for bearing the wafer.

[0021] The first transmission arm and the second transmission arm are both arranged in the second auxiliary cavity, one end of the first transmission arm is connected with the second cantilever, the other end is connected with one end of the second transmission arm, and the first transmission arm and the second transmission arm can rotate in opposite directions relative to each other.

[0022] The second driving member is arranged outside the second auxiliary cavity and connected with the other end of the second transmission arm, and is used for driving the second transmission arm to rotate, so as to drive the first transmission arm to rotate relative to the second transmission arm in the opposite direction, so that the second cantilever passes through the communication position of the second auxiliary cavity and the process cavity and extends into the process cavity or retracts into the second auxiliary cavity.

[0023] Optionally, the bearing assembly comprises a base, a plurality of pins and a fourth driving component, wherein the base is arranged to be lifted in the process cavity and is provided with a plurality of through holes for the plurality of pins to pass through one by one, the base is used to bear the wafer or the shielding component, and the plurality of pins are used to support the wafer or the shielding component together.

[0024] The fourth driving component is connected with the process cavity and connected with the plurality of pins, and is used to drive the plurality of pins to pass through the plurality of through holes one by one to be lifted, so as to be matched with the first transmission mechanism and the base respectively through the lifting of the plurality of pins, and the shielding component is transmitted to the first transmission mechanism or the base, or is matched with the second transmission mechanism and the base respectively, and the shielding component is transmitted to the second transmission mechanism or the base.

[0025] Optionally, the process cavity further comprises a gas inlet assembly and a gas extraction assembly, the gas inlet assembly and the gas extraction assembly are both communicated with the bottom wall of the process cavity, the gas inlet of the gas inlet assembly is located between the first auxiliary cavity and the bearing assembly, and the gas extraction of the gas extraction assembly is located between the second auxiliary cavity and the bearing assembly.

[0026] The application also provides a titanium nitride film deposition method applied to the process chamber for titanium nitride film deposition provided by the application, and the titanium nitride film deposition method comprises the following steps:

[0027] The shielding component is placed on the bearing assembly;

[0028] The first process gas is introduced into the process chamber;

[0029] Direct current power is applied to the target material to excite the first process gas to form plasma, and the target material is bombarded until the target material is formed with a substance meeting the requirements of the titanium nitride process;

[0030] The wafer is placed on the bearing assembly;

[0031] The first process gas is introduced into the process chamber;

[0032] Direct current power is applied to the target material to excite the first process gas to form plasma, and the target material is bombarded to deposit a titanium nitride film on the wafer.

[0033] Optionally, before the shielding component is placed on the bearing assembly, the method further comprises the following steps:

[0034] The wafer is placed on the bearing assembly;

[0035] supplying a second process gas to the process chamber;

[0036] applying direct current power to the target to excite the second process gas to form plasma, and bombard the target to deposit an adhesion layer containing titanium element on the wafer.

[0037] Optionally, the first process gas comprises argon and nitrogen, and the mixing ratio is 1:1-3:1; and / or,

[0038] The second process gas comprises argon, and the argon flow rate is 40-60sccm; and / or,

[0039] The direct current power applied to the target is 5-8kw.

[0040] The present application has the following beneficial effects:

[0041] The process chamber for titanium nitride film deposition provided by the present application can carry out semiconductor processes such as adhesion layer and barrier layer deposition in a sealed environment meeting the requirements of semiconductor processes, and when the barrier layer deposition process is needed after the adhesion layer deposition process in the process chamber, the wafer on which the adhesion layer is deposited can be transferred into the auxiliary cavity by means of the transmission mechanism, and the shielding component can be transferred onto the carrying assembly, so as to be carried by the carrying assembly to the process position, to carry out the first stage of barrier layer deposition, so that the target is formed with a substance meeting the requirements of titanium nitride process, and the area of the wafer carried by the carrying assembly is shielded by the shielding component, so as to avoid the substance from falling on the area of the wafer carried by the carrying assembly during the first stage, and to affect the subsequent wafer process. After the target is formed with a substance meeting the requirements of titanium nitride process, the shielding component is transferred into the auxiliary cavity by means of the transmission mechanism, and the wafer is transferred onto the carrying assembly, so as to be carried by the carrying assembly to the process position, to carry out the second stage of barrier layer deposition process. Since the target is formed with a substance meeting the requirements of titanium nitride process at this time, the titanium nitride of the barrier layer deposited on the wafer at this time meets the requirements of titanium nitride process, and can effectively block, so as to avoid the wafer from being deposited with a transition layer, and to increase the thickness of the barrier layer and improve the blocking effect.

[0042] The application provides a titanium nitride film layer deposition method and a process chamber for titanium nitride film layer deposition.

[0043] The titanium nitride film layer is deposited on the wafer by bombarding the target material with the plasma of the first process gas. Since the target material has formed the substance meeting the titanium nitride process requirement, the titanium nitride of the barrier layer deposited on the wafer at this time meets the titanium nitride process requirement and can effectively block, thereby avoiding the deposition of the transition layer on the wafer, increasing the thickness of the barrier layer and improving the blocking effect. BRIEF DESCRIPTION OF DRAWINGS

[0044] Figure 1 FIG. 6 is a structural schematic diagram of another process chamber;

[0045] Figure 2 FIG. 8 is a schematic diagram of the target material voltage changing with the nitrogen content;

[0046] Figure 3 FIG. 10 is a structural schematic diagram of the wafer sequentially deposited with the adhesion layer, the transition layer and the barrier layer;

[0047] Figure 4 FIG. 12 is a structural schematic diagram of the process chamber for titanium nitride film layer deposition provided by the embodiment of the application;

[0048] Figure 5 FIG. 14 is a flowchart of the titanium nitride film layer deposition method provided by the embodiment of the application;

[0049] Figure 6 FIG. 16 is a structural schematic diagram of the process chamber for titanium nitride film layer deposition provided by the embodiment of the application when the adhesion layer is deposited on the wafer;

[0050] Figure 7 FIG. 18 is a structural schematic diagram of the process chamber for titanium nitride film layer deposition provided by the embodiment of the application when the multiple top pins drop the wafer deposited with the adhesion layer to the second transmission mechanism;

[0051] Figure 8 FIG. 20 is a structural schematic diagram of the process chamber for titanium nitride film layer deposition provided by the embodiment of the application when the first transmission mechanism transmits the shielding component above the multiple top pins;

[0052] Figure 9 This is a schematic diagram of the structure of the base supporting shielding component of the process chamber for titanium nitride film deposition provided in an embodiment of the present invention, when the target burning process is performed at the process position;

[0053] Figure 10 This is a schematic diagram of the structure of a process chamber for titanium nitride film deposition provided in an embodiment of the present invention, in which multiple ejector pins descend to lower the shielding component onto the first transfer mechanism;

[0054] Figure 11 A schematic diagram of the structure of the second transport mechanism of the process chamber for titanium nitride film deposition provided in the embodiment of the present invention when the wafer with the deposited adhesive layer is transported above multiple ejector pins;

[0055] Figure 12 This is a schematic diagram of the structure of a process chamber for depositing titanium nitride film on a wafer during a barrier layer deposition process, as provided in an embodiment of the present invention.

[0056] Figure 13 This is a schematic diagram of a wafer on which an adhesion layer and a barrier layer are deposited sequentially.

[0057] Explanation of reference numerals in the attached figures:

[0058] 1-Process chamber; 11-Process body; 111-Process space; 12-First auxiliary chamber;

[0059] 13-First transmission mechanism; 131-First bearing component; 132-First driving component; 1321-First driving element; 1322-First transmission element; 14-Second auxiliary cavity; 15-Second transmission mechanism; 151-Second bearing component; 152-Second driving component; 1521-Second driving element; 1522-First transmission arm; 1523-Second transmission arm; 16-Shielding component; 17-Bearing assembly; 171-Base; 172-Ejector pin; 173-Fourth driving component; 181-Argon gas source; 182-Argon gas inlet pipe; 183-Argon gas flow meter; 184-Nitrogen gas source; 185-Nitrogen gas inlet pipe; 186-Nitrogen gas flow meter; 191- 192-Pump assembly; 193-Liner; 194-Pressure ring; 195-Target material; 196-Power supply; 197-Magnetic generation component; 2-Process chamber; 21-Process cavity; 211-Process space; 22-Magnetron; 231-Target material; 232-Power supply; 241-Liner; 242-Pressure ring; 25-Base; 26-Cold pump; 271-Argon gas source; 272-Argon gas inlet pipe; 273-Argon gas flow meter; 281-Nitrogen gas source; 282-Nitrogen gas inlet pipe; 283-Nitrogen gas flow meter; 291-Drive unit; 292-Ejector pin; 3-Wafer; 31-Adhesive layer; 32-Transition layer; 33-Barrier layer. Detailed Implementation

[0060] In order for those skilled in the art to better understand the technical solutions of the present application, the process chamber for titanium nitride film deposition and the titanium nitride film deposition method provided by the present application are described in detail below in combination with the drawings.

[0061] In order for those skilled in the art to better understand the process chamber 2 and the film deposition method provided by the embodiments of the present application, first, another process chamber 2 is introduced, as shown in FIG. 1, which can be used for semiconductor processes of depositing titanium film as an adhesion layer 31 and depositing titanium nitride film as a barrier layer 33. The process chamber 2 includes a process cavity 21, a magnetron 22, a target material 231, a shield 241, a cover ring 242, a pedestal 25, a cold pump 26, an argon gas source 271, an argon gas inlet pipe 272, an argon mass flow controller 273, a nitrogen gas source 281, a nitrogen gas inlet pipe 282, a nitrogen mass flow controller 283, a driving unit 291, a power supply 232, and a plurality of pins 292. The magnetron 22 is rotatably arranged in the process cavity 21 and located at the top of the process cavity 21. The target material 231 is located below the magnetron 22 and at the top opening of the process cavity 21. The target material 231 contains titanium elements. The shield 241 is annular and arranged on the inner side of the inner peripheral wall of the process cavity 21 along the circumference of the inner peripheral wall and located below the target material 231. The cover ring 242 is annular and separably overlapped with the shield 241 and can be overlapped on the pedestal 25. The pedestal 25 is arranged in the process cavity 21 and located at the bottom of the process cavity 21. A plurality of through holes are formed in the pedestal 25 for the plurality of pins 292 to pass through one by one. The driving unit 291 is arranged at the bottom of the process cavity 21 and connected with the plurality of pins 292 for driving the plurality of pins 292 to rise and fall through the plurality of through holes one by one. The cold pump 26 is in communication with the bottom wall of the process cavity 21. The argon gas source 271 is in communication with the side wall of the process cavity 21 through the argon gas inlet pipe 272. The argon mass flow controller 273 is arranged on the argon gas inlet pipe 272. The nitrogen gas source 281 is in communication with the side wall of the process cavity 21 through the nitrogen gas inlet pipe 282. The nitrogen mass flow controller 283 is arranged on the nitrogen gas inlet pipe 282. The power supply 232 is electrically connected with the target material 231 for applying direct current power to the target material 231.

[0062] The process chamber 2 first places the wafer 3 on the plurality of pins 292, supports the wafer 3 by means of the plurality of pins 292, and then controls the cold pump 26 to vacuumize the process cavity 21 so that the vacuum degree in the process cavity 21 meets the requirement of the semiconductor process (for example, less than 5E-7 Torr). Then, the base 25 is controlled to rise to lift the wafer 3 on the plurality of pins 292 and carry the wafer 3 to the process position, which means that the base 25 is lifted to lift the compression ring 242 so that the process space 211 for the semiconductor process is formed between the target material 231, the inner liner 241, the compression ring 242, and the base 25. Then, the deposition of the titanium film is performed. The argon flow meter 273 is turned on, and the argon gas source 271 is used to introduce argon into the process cavity 21. The argon enters the process space 211 through the gap between the compression ring 242 and the inner liner 241, and applies a direct current power to the target material 231 to excite the argon to form a plasma. The magnetron 22 generates an electromagnetic field to attract the plasma formed by the argon to bombard the target material 231, so that the titanium atoms of the target material 231 are sputtered and fall on the wafer 3, and the deposition of the titanium film is completed. Then, the deposition of the titanium nitride film is performed. The nitrogen flow meter 283 is turned on, and the nitrogen gas source 281 is used to introduce nitrogen into the process cavity 21. The nitrogen enters the process space 211 through the gap between the compression ring 242 and the inner liner 241, and applies a direct current power to the target material 231 to excite the nitrogen to form a plasma. The magnetron 22 generates an electromagnetic field to attract the plasma formed by the nitrogen to bombard the target material 231, so that the plasma formed by the nitrogen reacts with the titanium element of the target material 231 to form titanium nitride, and the plasma formed by the argon is used to bombard the target material 231, so that the titanium nitride formed on the target material 231 is sputtered and falls on the wafer 3, and the deposition of the titanium nitride film is completed.

[0063] The principle of preparing the titanium nitride film is that the ionized nitrogen element reacts with the metallic titanium element on the surface of the target material 231 to form a layer of titanium nitride film on the surface of the target material 231, which is sputtered to the surface of the wafer 3 under the bombardment of argon ions to form a titanium nitride film. However, as shown in Figure 2 , Figure 2 the horizontal coordinate is the content of the nitrogen introduced into the process cavity 21, and the vertical coordinate is the voltage on the target material 231, it can be seen from Figure 2As can be seen, with the increase of the nitrogen content, the voltage on the target 231 first increases slowly, when the nitrogen content increases to a certain content, the voltage on the target 231 rapidly increases, and then with the continuous increase of the nitrogen content, the voltage on the target 231 again resumes to slowly increase, which overall shows an upward curve. With the decrease of the nitrogen content, the voltage on the target 231 first decreases slowly, when the nitrogen content decreases to a value lower than the value at which the voltage on the target 231 appears an inflection point in the process of increasing, the voltage on the target 231 rapidly decreases, and then with the continuous decrease of the nitrogen content, the voltage on the target 231 again resumes to slowly decrease, which overall shows a lagging downward curve relative to the upward curve of the voltage on the target 231 in the process of increasing the nitrogen content. This phenomenon is called the poisoning of the target 231. In this process, the titanium nitride formed on the target 231 is divided into three types, the first type is metallic titanium nitride in the stage of low nitrogen content, the second type is intermediate titanium nitride in the stage of rapid increase of the voltage on the target 231, and the third type is combined titanium nitride in the stage of high nitrogen content. Among them, the physical and chemical properties of the metallic titanium nitride and the intermediate titanium nitride are unstable, the titanium nitride film formed on the wafer 3 by the two types is called a transition layer 32, the barrier effect of the transition layer 32 is poor, and the appearance of the transition layer 32 should be avoided in the semiconductor process of depositing the titanium nitride film as a barrier layer 33. The combined titanium nitride is stable in physical and chemical properties, the titanium nitride film formed on the wafer 3 by the combined titanium nitride is called a barrier layer 33, the barrier layer 33 is dense and has excellent barrier effect. Therefore, it can be seen that the stable nitrogen condition is required to prepare the combined titanium nitride film with stable physical and chemical properties, and a certain time is required for the titanium element of the target 231 to react with the ionized nitrogen element to form the combined titanium nitride.

[0064] The above-mentioned another process chamber 2 is used to perform the semiconductor process of depositing the titanium film as an adhesion layer 31 and depositing the titanium nitride film as a barrier layer 33. The deposition of the titanium film to the deposition of the titanium nitride film is continuously performed, the nitrogen content is unstable in the process of switching from the deposition of the titanium film to the deposition of the titanium nitride film, and the state of the substance formed by the reaction of the titanium element of the target 231 with the ionized nitrogen element is also unstable. Therefore, as shown in Figure 3 , the part of the film layer formed near the titanium film in the initial stage of the deposition of the titanium nitride film is the transition layer 32 with unstable physical and chemical properties and cannot effectively block. The part of the film layer formed away from the titanium film on the transition layer 32 in the late stage of the deposition of the titanium nitride film is the barrier layer 33 with stable physical and chemical properties and can effectively block, which causes the barrier layer 33 to be thin in thickness and affects the barrier effect.

[0065] As shown in Figure 4As shown, the embodiment of the present application provides a process chamber 1 for titanium nitride film deposition, the process chamber 1 includes a process cavity 11, a target material 194, a bearing assembly 17, a transmission mechanism, a shielding component 16 and an auxiliary cavity, the target material 194 is arranged on the top opening of the process cavity 11, and the target material 194 contains titanium elements; the bearing assembly 17 is arranged in the process cavity 11 in a liftable manner, the auxiliary cavity is communicated with the process cavity 11; the shielding component 16 is arranged on the transmission mechanism in a separable manner; the transmission mechanism is used for selectively placing one of the wafer 3 or the shielding component 16 on the bearing assembly 17, and placing the other one in the auxiliary cavity; when the process chamber 1 performs the barrier layer 33 deposition process, the transmission mechanism transfers the shielding component 16 to the bearing assembly 17, and transfers the wafer 3 to the auxiliary cavity, to perform the first stage of the barrier film deposition; after the target material 194 is formed with the substance meeting the titanium nitride process requirement, the transmission mechanism transfers the wafer 3 to the bearing assembly 17, and transfers the shielding component 16 to the auxiliary cavity, to perform the second stage of the barrier layer 33 deposition process.

[0066] The process chamber 1 for titanium nitride film deposition provided by the embodiment of the present application can perform the semiconductor process such as the adhesion layer 31 and the barrier layer 33 deposition in the environment meeting the semiconductor process sealing, and when the process chamber 1 performs the adhesion layer 31 deposition process and needs to perform the barrier layer 33 deposition process, the wafer 3 deposited with the adhesion layer 31 and borne on the bearing assembly 17 can be transferred to the auxiliary cavity by the transmission mechanism, and the shielding component 16 can be transferred to the bearing assembly 17, so as to be lifted to the process position by the bearing assembly 17 to perform the first stage of the barrier layer deposition, so that the target material 194 is formed with the substance meeting the titanium nitride process requirement, and the area of the wafer 3 borne by the bearing assembly 17 is shielded by the shielding component 16, so as to avoid the substance from falling on the area of the wafer 3 borne by the bearing assembly 17 in the first stage, and to avoid affecting the subsequent process of the wafer 3; after the target material 194 is formed with the substance meeting the titanium nitride process requirement, the shielding component 16 is transferred to the auxiliary cavity by the transmission mechanism, and the wafer 3 is transferred to the bearing assembly 17, so as to be lifted to the process position by the bearing assembly 17 to perform the second stage of the barrier layer 33 deposition process; since the target material 194 is formed with the substance meeting the titanium nitride process requirement at this time, the titanium nitride of the barrier layer 33 deposited on the wafer 3 at this time meets the titanium nitride process requirement, can effectively block, so as to avoid the wafer 3 from being deposited with the transition layer 32, and to increase the thickness of the barrier layer 33 and improve the blocking effect.

[0067] As Figure 4In a preferred embodiment of the present application, the auxiliary cavities can include a first auxiliary cavity 12 and a second auxiliary cavity 14, the transmission mechanisms can include a first transmission mechanism 13 and a second transmission mechanism 15, the first auxiliary cavity 12 is in communication with the process cavity 11, the first transmission mechanism 13 is used to transmit the shielding component 16 between the first auxiliary cavity 12 and the carrier assembly 17, the second auxiliary cavity 14 is in communication with the process cavity 11, and the second transmission mechanism 15 is used to transmit the wafer 3 between the second auxiliary cavity 14 and the carrier assembly 17.

[0068] By providing the first auxiliary cavity 12 and the second auxiliary cavity 14 in communication with the process cavity 11 respectively, and by transmitting the shielding component 16 between the first auxiliary cavity 12 and the carrier assembly 17 through the first transmission mechanism 13, and by transmitting the wafer 3 between the second auxiliary cavity 14 and the carrier assembly 17 through the second transmission mechanism 15, the shielding component 16 can not enter the second auxiliary cavity 14 and can not contact the second transmission mechanism 15, so that the material falling on the shielding component 16 during the first stage can be prevented from entering the second auxiliary cavity 14 or falling on the second transmission mechanism 15, thereby avoiding the material falling on the shielding component 16 during the first stage from contaminating the wafer 3 and affecting the subsequent process of the wafer 3.

[0069] After the adhesion layer 31 deposition process is performed in the process chamber 1, when the barrier layer 33 deposition process needs to be performed, the wafer 3 on which the adhesion layer 31 is deposited is first transmitted into the second auxiliary cavity 14 by the second transmission mechanism 15, and the shielding component 16 is transmitted from the first auxiliary cavity 12 onto the carrier assembly 17 by the first transmission mechanism 13, so as to be lifted to the process position by the carrier assembly 17 to perform the first-stage barrier film deposition, so that the target material 194 forms a material meeting the requirements of the titanium nitride process, and after the target material 194 forms a material meeting the requirements of the titanium nitride process, the shielding component 16 carried on the carrier assembly 17 is transmitted into the first auxiliary cavity 12 by the first transmission mechanism 13, and the wafer 3 is transmitted from the second auxiliary cavity 14 onto the carrier assembly 17 by the second transmission mechanism 15, so as to be lifted to the process position by the carrier assembly 17 to perform the second-stage barrier layer 33 deposition process.

[0070] However, the auxiliary cavity and transport mechanism of the process chamber 1 for titanium nitride film deposition provided in the embodiments of the present invention are not limited thereto. For example, there may be one auxiliary cavity and one transport mechanism. In this case, the transport mechanism may include a first support part and a second support part. The first support part is used to transport the shielding member 16 between the auxiliary cavity and the support assembly 17, and the second support part is used to transport the wafer 3 between the auxiliary cavity and the support assembly 17.

[0071] like Figure 4 As shown, in a preferred embodiment of the present invention, the first auxiliary cavity 12 and the second auxiliary cavity 14 are disposed opposite to each other on both sides of the process cavity 11. This increases the distance between the first auxiliary cavity 12 and the second auxiliary cavity 14, thereby further preventing material falling on the shielding component 16 during the first stage from entering the second auxiliary cavity 14, and thus further preventing material falling on the shielding component 16 during the first stage from falling onto the wafer 3 and contaminating the wafer 3.

[0072] Optionally, the shielding component 16 can be a circular shield with a shape matching the wafer 3. In this way, when the shielding component 16 is supported on the carrier assembly 17, the orthographic projection of the shielding component 16 on the carrier assembly 17 can coincide with the area of ​​the carrier assembly 17 that supports the wafer 3, thereby shielding the area of ​​the carrier assembly 17 that supports the wafer 3 by means of the shielding component 16.

[0073] like Figure 4 As shown, in a preferred embodiment of the present invention, the first transmission mechanism 13 may include a first bearing component 131 and a first driving component 132. The first bearing component 131 is used to bear the shielding component 16. The first driving component 132 is connected to the process cavity 11 and to the first bearing component 131. It is used to drive the first bearing component 131 through the communication between the first auxiliary cavity 12 and the process cavity 11 and rotate it into the first auxiliary cavity 12 or the process cavity 11, so that the first bearing component 131 and the carrying component 17 can transfer the shielding component 16 to the first bearing component 131 or the carrying component 17 in a lifting and lowering coordination.

[0074] For example, the first driving component 132 can drive the first bearing component 131 bearing the shielding component 16 to pass through the communication between the first auxiliary cavity 12 and the process cavity 11, rotate into the process cavity 11, so that the shielding component 16 is above the bearing assembly 17, and then the bearing assembly 17 can be controlled to rise, so that the bearing assembly 17 holds up the shielding component 16 above it, and the shielding component 16 is separated from the first bearing component 131, thereby realizing the first transmission mechanism 13 to transmit the shielding component 16 to the bearing assembly 17, and then the first driving component 132 can drive the first bearing component 131 to pass through the communication between the first auxiliary cavity 12 and the process cavity 11, rotate into the first auxiliary cavity 12, so that the bearing assembly 17 can bear the shielding component 16 to continue to rise to the process position, and the target material surface is formed with the substance meeting the titanium nitride process requirement.

[0075] For example, the first driving component 132 can drive the first bearing component 131 bearing the shielding component 16 to pass through the communication between the first auxiliary cavity 12 and the process cavity 11, rotate into the process cavity 11, so that the shielding component 16 is above the bearing assembly 17, and then the bearing assembly 17 can be controlled to rise, so that the bearing assembly 17 holds up the shielding component 16 above it, and the shielding component 16 is separated from the first bearing component 131, thereby realizing the first transmission mechanism 13 to transmit the shielding component 16 to the bearing assembly 17, and then the first driving component 132 can drive the first bearing component 131 to pass through the communication between the first auxiliary cavity 12 and the process cavity 11, rotate into the first auxiliary cavity 12, so that the bearing assembly 17 can bear the shielding component 16 to continue to rise to the process position, and the target material surface is formed with the substance meeting the titanium nitride process requirement.

[0076] As shown in the preferred embodiment of the present application, Figure 4 The first bearing component 131 can include a first cantilever, and the first driving component 132 can include a first driving member 1321 and a first transmission member 1322, wherein the first cantilever is used to bear the shielding component 16; the first transmission member 1322 is arranged in the process cavity 11 and connected with one end of the first cantilever; the first driving member 1321 is arranged outside the process cavity 11 and connected with the first transmission member 1322, and is used to drive the first transmission member 1322 to rotate, and drive the first cantilever to pass through the communication between the first auxiliary cavity 12 and the process cavity 11, rotate into the first auxiliary cavity 12 or the process cavity 11.

[0077] That is, the first driving member 1321 can provide a rotating driving force, and the first driving member 1321 can drive the first transmission member 1322 to rotate by applying the rotating driving force provided by the first driving member 1321 to the first transmission member 1322. Since the first transmission member 1322 is connected to one end of the first cantilever, the rotation of the first transmission member 1322 can drive the first cantilever to pass through the communication position between the first auxiliary cavity 12 and the process cavity 11, and rotate into the first auxiliary cavity 12 or the process cavity 11.

[0078] As shown in FIG. 1, in a preferred embodiment of the present application, the second transmission mechanism 15 can include a second bearing member 151 and a second driving member 152. The second bearing member 151 is used to bear the wafer 3. The second driving member 152 is connected to the second auxiliary cavity 14 and connected to the second bearing member 151, and is used to drive the second bearing member 151 to pass through the communication position between the second auxiliary cavity 14 and the process cavity 11, and extend into the process cavity 11 or retract into the second auxiliary cavity 14, so as to transmit the wafer 3 to the second bearing member 151 or the bearing assembly 17 through the lifting cooperation of the second bearing member 151 and the bearing assembly 17. Figure 4 For example, when the bearing assembly 17 does not bear the shielding member 16 and the wafer 3 is lowered to a low position, the second driving member 152 can drive the second bearing member 151 bearing the wafer 3 to pass through the communication position between the second auxiliary cavity 14 and the process cavity 11, and extend into the process cavity 11, so that the wafer 3 is located above the bearing assembly 17. Then, the bearing assembly 17 can be lifted to lift the wafer 3 above the bearing assembly 17, so that the wafer 3 is separated from the second bearing member 151, thereby realizing the transmission of the wafer 3 to the bearing assembly 17 through the lifting cooperation of the second bearing member 151 and the bearing assembly 17. Then, the second driving member 152 can drive the second bearing member 151 to pass through the communication position between the second auxiliary cavity 14 and the process cavity 11, and retract into the second auxiliary cavity 14, so that the bearing assembly 17 can bear the wafer 3 and continue to rise to the process position for semiconductor process.

[0079]

[0080] ​For example, the second driving component 152 can also drive the second carrying component 151, which does not carry the wafer 3, to pass through the communication between the second auxiliary cavity 14 and the process cavity 11 and extend into the process cavity 11 after the carrying assembly 17 carries the wafer 3 to perform the semiconductor process, so that the second carrying component 151 is located below the wafer 3. Then, the wafer 3 can be lowered onto the second carrying component 151 by controlling the carrying assembly 17 to descend, so that the wafer 3 is transferred onto the second carrying component 151 by the descending cooperation of the second carrying component 151 and the carrying assembly 17. Then, the second driving component 152 can drive the second carrying component 151 to pass through the communication between the second auxiliary cavity 14 and the process cavity 11 and retract into the second auxiliary cavity 14, so that the wafer 3 is transferred into the second auxiliary cavity 14 by the second transferring mechanism 15.

[0081] As shown in the preferred embodiment of the present application, Figure 4 the second carrying component 151 can include a second cantilever, and the second driving component 152 can include a second driving member 1521, a first transmission arm 1522 and a second transmission arm 1523, wherein the second cantilever is used to carry the wafer 3; the first transmission arm 1522 and the second transmission arm 1523 are both arranged in the second auxiliary cavity 14, one end of the first transmission arm 1522 is connected with the second cantilever, the other end is connected with one end of the second transmission arm 1523, and the first transmission arm 1522 and the second transmission arm 1523 can rotate in opposite directions; the second driving member 1521 is arranged outside the second auxiliary cavity 14 and connected with the other end of the second transmission arm 1523, and is used to drive the second transmission arm 1523 to rotate and drive the first transmission arm 1522 to rotate in the opposite direction relative to the second transmission arm 1523, so that the second cantilever extends into the process cavity 11 or retracts into the second auxiliary cavity 14 through the communication between the second auxiliary cavity 14 and the process cavity 11.

[0082] In other words, the second driving member 1521 can provide rotational driving force. Since the second driving member 1521 is connected to the other end of the second transmission arm 1523, the second driving member 1521 can drive the first transmission arm 1522 to rotate by applying the rotational driving force it provides to the first transmission arm 1522. Since one end of the second transmission arm 1523 is connected to the other end of the first transmission arm 1522, and the first transmission arm 1522 and the second transmission arm 1523 can rotate relative to each other in opposite directions, the rotation of the second transmission arm 1523 can drive the first transmission arm 1522 to rotate in the opposite direction relative to the second transmission arm 1523. Thus, by the second transmission arm 1523 rotating in the opposite direction relative to the first transmission arm 1522, the second cantilever connected to one end of the first transmission arm 1522 is driven to extend into the process cavity 11 or retract into the second auxiliary cavity 14.

[0083] like Figure 4 As shown, in a preferred embodiment of the present invention, the carrier component 17 may include a base 171, a plurality of ejector pins 172, and a fourth driving component 173. The base 171 is vertically and elliptically disposed within the process cavity 11 and has a plurality of through holes through which the plurality of ejector pins 172 pass. The base 171 is used to carry the wafer 3 or the shielding component 16 for lifting and lowering, and the plurality of ejector pins 172 are used to jointly support the wafer 3 or the shielding component 16. The fourth driving component 173 is connected to the process cavity 11 and to the plurality of ejector pins 172, and is used to drive the plurality of ejector pins 172 to lift and lower through the plurality of through holes, so that the lifting and lowering of the plurality of ejector pins 172 cooperates with the first transmission mechanism 13 and the base 171 respectively to transfer the shielding component 16 to the first transmission mechanism 13 or the base 171, or cooperates with the second transmission mechanism 15 and the base 171 respectively to transfer the shielding component 16 to the second transmission mechanism 15 or the base 171.

[0084] For example, when the base 171 and the plurality of pins 172 do not carry the shielding component 16 and the wafer 3, the base 171 can be lowered to the low position, the fourth driving component 173 can drive the plurality of pins 172 to be lowered to the low position, at this time, the first transmission mechanism 13 can transmit the shielding component 16 to the upper side of the base 171 and the plurality of pins 172, and then the fourth driving component 173 can drive the plurality of pins 172 to be raised, so that the plurality of pins 172 pass through the plurality of through holes in the base 171 one by one, and the shielding component 16 on the first transmission mechanism 13 is lifted, so that the shielding component 16 is separated from the first transmission mechanism 13, and then the first transmission mechanism 13 can be moved back into the first auxiliary cavity 12, and the fourth driving component 173 can drive the plurality of pins 172 to be lowered, so that the shielding component 16 on the plurality of pins 172 falls onto the base 171, thereby realizing that the plurality of pins 172 are raised and lowered respectively in cooperation with the first transmission mechanism 13 and the base 171, and the shielding component 16 is transmitted to the base 171, and then the base 171 carrying the shielding component 16 is raised to the process position, and the target material surface is formed with a substance meeting the titanium nitride process requirement.

[0085] For example, when the base 171 carrying the shielding component 16 is lowered, the base 171 can be lowered to make the plurality of pins 172 pass through the plurality of through holes one by one, so that the plurality of pins 172 lift the shielding component 16 on the base 171, and then the first transmission mechanism 13 can be moved between the shielding component 16 and the base 171, and the fourth driving component 173 can drive the plurality of pins 172 to be lowered, so that the shielding component 16 on the plurality of pins 172 falls onto the first transmission mechanism 13, thereby realizing that the plurality of pins 172 are raised and lowered respectively in cooperation with the first transmission mechanism 13 and the base 171, and the shielding component 16 is transmitted to the first transmission mechanism 13, and then the first transmission mechanism 13 can be moved back into the first auxiliary cavity 12, thereby realizing that the first transmission mechanism 13 transmits the shielding component 16 into the first auxiliary cavity 12.

[0086] For example, when the base 171 and the plurality of pins 172 do not carry the shielding component 16 and the wafer 3, the base 171 can be lowered to a low position, the fourth driving component 173 can drive the plurality of pins 172 to be lowered to the low position, at this time, the second transfer mechanism 15 can transfer the wafer 3 above the base 171 and the plurality of pins 172, then the fourth driving component 173 can drive the plurality of pins 172 to be raised, so that the plurality of pins 172 pass through the plurality of through holes in the base 171 one by one, the wafer 3 on the second transfer mechanism 15 is lifted, and the wafer 3 is separated from the second transfer mechanism 15, then the second transfer mechanism 15 can be moved back into the second auxiliary cavity 14, and the fourth driving component 173 can drive the plurality of pins 172 to be lowered, so that the wafer 3 on the plurality of pins 172 falls onto the base 171, thereby realizing the lifting of the plurality of pins 172 to cooperate with the second transfer mechanism 15 and the base 171 respectively, transferring the shielding component 16 to the base 171, and then transferring the wafer 3 to the base 171 by the second transfer mechanism 15. After that, the base 171 can carry the wafer 3 to be raised to a process position for semiconductor process.

[0087] For example, when the base 171 carries the wafer 3 to be lowered, the base 171 can be lowered to make the plurality of pins 172 pass through the plurality of through holes one by one, so that the plurality of pins 172 lift the wafer 3 on the base 171, then the second transfer mechanism 15 can be moved between the wafer 3 and the base 171, the fourth driving component 173 can drive the plurality of pins 172 to be lowered, so that the wafer 3 on the plurality of pins 172 falls onto the second transfer mechanism 15, thereby realizing the lifting of the plurality of pins 172 to cooperate with the second transfer mechanism 15 and the base 171 respectively, transferring the wafer 3 to the second transfer mechanism 15, then the second transfer mechanism 15 can be moved back into the second auxiliary cavity 14, and then the second transfer mechanism 15 can transfer the wafer 3 into the second auxiliary cavity 14.

[0088] In a preferred embodiment of the present application, the process cavity 11 can further include a gas inlet assembly and a gas exhaust assembly 191, both of which are in communication with the bottom wall of the process cavity 11, the gas inlet port of the gas inlet assembly is located between the first auxiliary cavity 12 and the carrying assembly 17, and the gas exhaust port of the gas exhaust assembly is located between the second auxiliary cavity 14 and the carrying assembly 17. The gas inlet assembly is used to introduce process gas into the process cavity 11, and the gas exhaust assembly 191 is used to exhaust the process cavity 11, so that the vacuum degree in the process cavity 11 meets the requirements of semiconductor process.

[0089] As Figure 4As shown, optionally, the gas intake assembly may include an argon gas source 181, an argon gas inlet pipe 182, an argon gas flow meter 183, a nitrogen gas source 184, a nitrogen gas inlet pipe 185, and a nitrogen gas flow meter 186. The argon gas source 181 is connected to the bottom wall of the process chamber 11 through the argon gas inlet pipe 182. The argon gas flow meter 183 is installed on the argon gas inlet pipe 182 to control the flow rate of argon gas flowing through the argon gas inlet pipe 182. The nitrogen gas source 184 is connected to the bottom wall of the process chamber 11 through the nitrogen gas inlet pipe 185. The nitrogen gas flow meter 186 is installed on the nitrogen gas inlet pipe 185 to control the flow rate of nitrogen gas flowing through the nitrogen gas inlet pipe 185.

[0090] Optionally, the extraction assembly 191 may include a cold pump.

[0091] like Figure 5 As shown, in a preferred embodiment of the present invention, the process chamber 1 may further include an inner liner 192, a pressure ring 193, a power supply 195, and a magnetic generating component 196. The inner liner 192 is annular and is disposed circumferentially along the inner peripheral wall of the process chamber 11, on the inner side of the inner peripheral wall of the process chamber 11, and located above the base 171. It is used to shield the inner peripheral wall of the process chamber 11 to prevent the material generated in the semiconductor process from depositing on the inner peripheral wall of the process chamber 11 and causing corrosion to the inner peripheral wall of the process chamber 11. The pressure ring 193 is annular and can be separably overlapped with the inner liner 192 and can be overlapped on the base 171. The power supply 195 is electrically connected to the target 194 and is used to apply DC power to the target to excite the process gas to form plasma. The magnetic generating component 196 is rotatably disposed in the process chamber 11 and located above the target, and is used to generate an electromagnetic field to attract the plasma formed by the process gas to bombard the target.

[0092] Optionally, the magnetic generating component 196 may include a magnetron.

[0093] like Figures 6-12 As shown, this embodiment of the invention also provides a titanium nitride film deposition method, applied to a process chamber 1 for titanium nitride film deposition as provided in this embodiment of the invention. The titanium nitride film deposition method includes:

[0094] S1, place the shielding component 16 on the support assembly 17;

[0095] S2, introduce the first process gas into process chamber 1;

[0096] S3, apply DC power to the target 194 to excite the first process gas to form plasma, bombard the target 194 until a material that meets the requirements of the titanium nitride process is formed on the target 194.

[0097] S4, place wafer 3 on carrier component 17;

[0098] S5, introducing a first process gas into the process chamber 1;

[0099] S6, applying a direct current power to the target material 194 to excite the first process gas to form a plasma to bombard the target material to deposit a titanium nitride film layer on the wafer 3.

[0100] The titanium nitride film layer deposition method provided by the embodiments of the present application, by means of the process chamber 1 for titanium nitride film layer deposition provided by the embodiments of the present application, after the adhesion layer 31 deposition process on the wafer 3, when the barrier layer 33 deposition process is needed, the shielding component 16 can be placed on the bearing assembly 17 first, and the first process gas is introduced into the process chamber, and the direct current power is applied to the target material 194 to excite the first process gas to form a plasma to bombard the target material 194, until the target material 194 is formed with a substance meeting the titanium nitride process requirements, and then the wafer 3 is placed on the bearing assembly 17, and the first process gas is introduced into the process chamber 1, and the direct current power is applied to the target material 194 to excite the first process gas to form a plasma to bombard the target material 194 to deposit a titanium nitride film layer on the wafer 3. Since the target material 194 has already formed a substance meeting the titanium nitride process requirements at this time, the titanium nitride of the barrier layer 33 deposited on the wafer 3 at this time meets the titanium nitride process requirements and can effectively block, thereby avoiding the deposition of the transition layer 32 on the wafer 3, and further increasing the thickness of the barrier layer 33 and improving the blocking effect.

[0101] In a preferred embodiment of the present application, before the shielding component 16 is placed on the bearing assembly 17, it can further include:

[0102] Placing the wafer 3 on the bearing assembly 17;

[0103] Introducing a second process gas into the process chamber 1;

[0104] Applying a direct current power to the target material 194 to excite the second process gas to form a plasma to bombard the target material to deposit an adhesion layer containing titanium elements on the wafer 3.

[0105] In a preferred embodiment of the present application, the first process gas can include argon and nitrogen, and the mixing ratio is 1:1-3:1; and / or, the second process gas can include argon, and the argon flow rate is 40sccm-60sccm; and / or, the direct current power applied to the target material 194 can be 5kw-8kw.

[0106] Optionally, the mixing ratio of argon and nitrogen of the first process gas can be 2:1.

[0107] In combination Figure 6As shown, a process chamber 1 for titanium nitride film deposition provided by a preferred embodiment of the present invention is introduced, and a titanium nitride film deposition method provided by a preferred embodiment of the present invention is used to deposit a titanium thin film as an adhesion layer 31 and a titanium nitride thin film as a barrier layer 33 in a semiconductor process. First, the base 171 is lowered to an initial position, so that multiple ejector pins 172 pass through multiple through-holes opened on the base 171 one-to-one, with the top of each ejector pin 172 higher than the base 171. Then, the wafer 3 is transferred into the process chamber 11 and placed on the multiple ejector pins 172. Next, the base 171 is raised to lift the wafer 3 located on the multiple ejector pins 172 and continues to rise to the process position (e.g., ...). Figure 6 As shown), the process location refers to, for example... Figure 7 As shown, the base 171 rises to lift the pressure ring 193, allowing a process space 111 for semiconductor processing to be formed between the target 194, the inner liner 192, the pressure ring 193, and the base 171. Then, a semiconductor process is performed to deposit a titanium thin film as an adhesive layer 31, i.e., depositing a titanium thin film as an adhesive layer 31 on the wafer 3. The argon flow meter 183 is turned on, and argon gas is introduced into the process chamber 11 through the argon gas source 181. The argon gas enters the process space 111 through the gap between the pressure ring 193 and the inner liner 192. The power supply 195 applies DC power to the target 194 to excite the argon gas to form plasma, and the magnetic generator 196 generates an electromagnetic field to attract the plasma formed by the argon gas to bombard the surface of the target 194, causing titanium atoms on the surface of the target 194 to be sputtered and fall onto the wafer 3, thus depositing a titanium thin film, i.e., an adhesive layer containing titanium, on the surface of the wafer 3.

[0108] After completing the semiconductor process of depositing a titanium thin film as the adhesive layer 31, the argon flow meter 183 is turned off, and the base 171 carrying the wafer 3 is lowered to its initial position, so that multiple ejector pins 172 pass through multiple through holes one by one, making the tip of each ejector pin 172 higher than the base 171, thus lifting the wafer 3 on the base 171. Then, the second driving component 152 is controlled to drive the second support component 151, which does not carry the wafer 3, to extend into the process cavity 11, and make the second support component 151 below the wafer 3. Then, the fourth driving component 173 is controlled to drive the multiple ejector pins 172 to descend, so that the shielding components 16 located on the multiple ejector pins 172 fall onto the second support component 151 (e.g., Figure 9(As shown). Then, the second driving component 152 is controlled to drive the second supporting component 151 carrying the wafer 3 to retract into the second auxiliary cavity 14. Then, the first driving component 132 is controlled to drive the first supporting component 131 carrying the shielding component 16 to rotate into the process cavity 11, so that the shielding component 16 is above the plurality of ejector pins 172 (as shown in Figure 8). Then, the fourth driving component 173 is controlled to drive the plurality of ejector pins 172 to rise, lifting the shielding component 16 located on the first supporting component 131, so that the shielding component 16 is separated from the first supporting component 131. Then, the first driving component 132 is controlled to drive the first supporting component 131 to rotate into the first auxiliary cavity 12.

[0109] Then the control base 171 supports the shielding component 16 and raises it to the process position (e.g. Figure 10 As shown, the target burning process is performed. Argon flow meter 183 and nitrogen flow meter 186 are turned on. A mixture of argon and nitrogen is introduced into the process chamber 11 through argon source 181 and nitrogen source 184. The argon and nitrogen mixture enters the process space 111 through the gap between the pressure ring 193 and the liner 192. Power supply 195 applies DC power to the target 194 to excite the argon and nitrogen to form plasma. The magnetic generator 196 generates an electromagnetic field to attract the plasma, causing it to react with the titanium on the target 194 surface to form titanium nitride. The argon plasma then bombards the target 194 surface, sputtering the titanium nitride. As the nitrogen content increases, this process continues for a preset time (optional, 2-3 minutes). Once the surface of the target 194 is covered with titanium nitride that meets the requirements of the titanium nitride process and can effectively block it, the target burning process is complete.

[0110] Then, the argon flow meter 183 and nitrogen flow meter 186 are turned off, and the base 171 is lowered to its initial position, so that multiple ejector pins 172 pass through multiple through holes one by one, making the top of each ejector pin 172 higher than the base 171, thus lifting the shielding component 16 located on the base 171. Then, the first driving component 132 is controlled to drive the first supporting component 131, which does not carry the shielding component 16, to rotate into the process cavity 11, so that the first supporting component 131 is located below the shielding component 16. Then, the fourth driving component 173 is controlled to drive the multiple ejector pins 172 to descend, so that the shielding component 16 located on the multiple ejector pins 172 falls onto the first supporting component 131 (e.g., ...). Figure 11Afterwards, the first driving component 132 is controlled to drive the first carrying component 131 carrying the shielding component 16 to rotate into the first auxiliary cavity 12, and the second driving component 152 is controlled to drive the second carrying component 151 carrying the wafer 3 to extend into the process cavity 11, and the wafer 3 is located above the plurality of pins 172 (as shown in Fig. 6). Figure 12 Afterwards, the fourth driving component 173 is controlled to drive the plurality of pins 172 to ascend, and the wafer 3 on the second carrying component 151 is lifted up to separate the wafer 3 from the second carrying component 151, and then the second driving component 152 is controlled to drive the second carrying component 151 carrying the wafer 3 to retract into the second auxiliary cavity 14, and the base 171 is controlled to ascend to lift up the wafer 3 on the plurality of pins 172, and the wafer 3 is carried to continue to ascend to the process position (as shown in Fig. 6).

[0111] Afterwards, the fourth driving component 173 is controlled to drive the plurality of pins 172 to ascend, and the wafer 3 on the second carrying component 151 is lifted up to separate the wafer 3 from the second carrying component 151, and then the second driving component 152 is controlled to drive the second carrying component 151 carrying the wafer 3 to retract into the second auxiliary cavity 14, and the base 171 is controlled to ascend to lift up the wafer 3 on the plurality of pins 172, and the wafer 3 is carried to continue to ascend to the process position (as shown in Fig. 6). Figure 13 Afterwards, the fourth driving component 173 is controlled to drive the plurality of pins 172 to ascend, and the wafer 3 on the second carrying component 151 is lifted up to separate the wafer 3 from the second carrying component 151, and then the second driving component 152 is controlled to drive the second carrying component 151 carrying the wafer 3 to retract into the second auxiliary cavity 14, and the base 171 is controlled to ascend to lift up the wafer 3 on the plurality of pins 172, and the wafer 3 is carried to continue to ascend to the process position (as shown in Fig. 6).

[0112] As shown in Fig. 6, during the semiconductor process of depositing the titanium nitride film as the barrier layer 33, since the titanium nitride film satisfying the requirement of the titanium nitride process and capable of effectively blocking has been formed on the surface of the target material 194, the titanium nitride deposited on the wafer 3 during this process can all satisfy the requirement of the titanium nitride process and capable of effectively blocking, so that the wafer 3 is not required to deposit the transition layer 32, and the wafer 3 on which the adhesion layer 31 is deposited is entirely the barrier layer 33, that is, the wafer 3 has the adhesion layer 31 deposited thereon, and the barrier layer 33 is deposited on the adhesion layer 31, thereby increasing the thickness of the barrier layer 33 and improving the blocking effect. ​ As shown in Fig. 6, during the semiconductor process of depositing the titanium nitride film as the barrier layer 33, since the titanium nitride film satisfying the requirement of the titanium nitride process and capable of effectively blocking has been formed on the surface of the target material 194, the titanium nitride deposited on the wafer 3 during this process can all satisfy the requirement of the titanium nitride process and capable of effectively blocking, so that the wafer 3 is not required to deposit the transition layer 32, and the wafer 3 on which the adhesion layer 31 is deposited is entirely the barrier layer 33, that is, the wafer 3 has the adhesion layer 31 deposited thereon, and the barrier layer 33 is deposited on the adhesion layer 31, thereby increasing the thickness of the barrier layer 33 and improving the blocking effect.

[0113] However, the process chamber 1 for depositing a titanium nitride film layer provided by the present application and the method for depositing a titanium nitride film layer provided by the present application are not limited to the way of depositing a titanium film as the adhesion layer 31 and depositing a titanium nitride film as the barrier layer 33 in a semiconductor process.

[0114] In summary, the process chamber 1 for depositing a titanium nitride film layer and the method for depositing a titanium nitride film layer provided by the present application can avoid depositing a transition layer 32 on the wafer 3, thereby increasing the thickness of the barrier layer 33 and improving the barrier effect.

[0115] It can be understood that the above embodiments are only exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and essence of the present application, and these modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. A process chamber for titanium nitride film deposition, the process chamber comprising a process cavity, a target, and a carrier assembly, the target disposed on a top opening of the process cavity, the target comprising titanium element. The carrier assembly is arranged in the process cavity in a liftable manner, characterized in that, The process chamber further comprises: A transmission mechanism, a shielding component and an auxiliary cavity, the auxiliary cavity being in communication with the process cavity; The shielding component is arranged on the transmission mechanism in a detachable manner; The transmission mechanism is used for selectively placing one of the wafer or the shielding component on the carrier assembly and the other in the auxiliary cavity; When the process chamber performs the barrier layer deposition process, the transmission mechanism transfers the shielding component to the carrier assembly and transfers the wafer to the auxiliary cavity to perform the first stage of barrier layer deposition; after the target material is formed with a substance meeting the titanium nitride process requirement, the transmission mechanism transfers the wafer to the carrier assembly and transfers the shielding component to the auxiliary cavity to perform the second stage of barrier layer deposition process to deposit and form a titanium nitride film layer on the wafer, Wherein, the first stage of barrier layer deposition includes the process chamber introducing a first process gas, applying a direct current power to the target material to excite the first process gas to form a plasma, and bombarding the target material until the target material is formed with a substance meeting the titanium nitride process requirement; and Wherein, the second stage of barrier layer deposition process includes the process chamber introducing the first process gas; applying a direct current power to the target material to excite the first process gas to form a plasma, and bombarding the target material to deposit and form a titanium nitride film layer on the wafer.

2. The process chamber for titanium nitride film deposition of claim 1, wherein, The auxiliary cavity comprises: a first auxiliary cavity and a second auxiliary cavity, the transmission mechanism comprises: a first transmission mechanism and a second transmission mechanism, the first auxiliary cavity is in communication with the process cavity, and the first transmission mechanism is used for transmitting the shielding component between the first auxiliary cavity and the carrier assembly; The second auxiliary cavity is in communication with the process cavity, and the second transmission mechanism is used for transmitting the wafer between the second auxiliary cavity and the carrier assembly.

3. The process chamber for titanium nitride film deposition of claim 2, wherein, The first auxiliary cavity and the second auxiliary cavity are arranged opposite to each other on two sides of the process cavity.

4. The process chamber for titanium nitride film deposition of claim 2, wherein, The first transmission mechanism comprises a first carrier component and a first driving component, wherein the first carrier component is used for carrying the shielding component; The first driving component is connected with the process cavity and the first carrier component, and is used for driving the first carrier component to pass through the communication position of the first auxiliary cavity and the process cavity in cooperation with the lifting of the carrier assembly, and rotate into the first auxiliary cavity or the process cavity, so that the first carrier component transmits the shielding component to the first carrier component or the carrier assembly in cooperation with the lifting of the carrier assembly.

5. The process chamber for titanium nitride film deposition of claim 4, wherein, The first carrier component comprises a first cantilever, and the first driving component comprises a first driving member and a first transmission member, wherein the first cantilever is used for carrying the shielding component; the first transmission member is arranged in the process cavity and connected with one end of the first cantilever; The first driving member is arranged outside the process cavity and connected with the first transmission member, and is used to drive the first transmission member to rotate, so as to drive the first cantilever to pass through the communication position between the first auxiliary cavity and the process cavity and rotate into the first auxiliary cavity or the process cavity.

6. The process chamber for titanium nitride film deposition of claim 2, wherein, The second transmission mechanism comprises a second bearing component and a second driving component, wherein the second bearing component is used to bear the wafer; The second driving component is connected with the second auxiliary cavity and the second bearing component, and is used to drive the second bearing component to pass through the communication position between the second auxiliary cavity and the process cavity, extend into the process cavity or retract into the second auxiliary cavity, so as to transmit the wafer to the second bearing component or the bearing assembly through the lifting cooperation between the second bearing component and the bearing assembly.

7. The process chamber for titanium nitride film deposition of claim 6, wherein, The second bearing component comprises a second cantilever, and the second driving component comprises a second driving member, a first transmission arm and a second transmission arm, wherein the second cantilever is used to bear the wafer; The first transmission arm and the second transmission arm are arranged in the second auxiliary cavity, one end of the first transmission arm is connected with the second cantilever, the other end of the first transmission arm is connected with one end of the second transmission arm, and the first transmission arm and the second transmission arm can rotate in opposite directions; The second driving member is arranged outside the second auxiliary cavity and connected with the other end of the second transmission arm, and is used to drive the second transmission arm to rotate, so as to drive the first transmission arm to rotate in the opposite direction relative to the second transmission arm, so that the second cantilever passes through the communication position between the second auxiliary cavity and the process cavity, extends into the process cavity or retracts into the second auxiliary cavity.

8. The process chamber for titanium nitride film deposition of claim 2, wherein, The bearing assembly comprises a base, a plurality of top pins and a fourth driving component, wherein the base is arranged in the process cavity in a lifting manner, and a plurality of through holes are formed in the base for the plurality of top pins to pass through one by one, the base is used to bear the wafer or the shielding component to lift, and the plurality of top pins are used to jointly support the wafer or the shielding component; The fourth driving component is connected with the process cavity and the plurality of top pins, and is used to drive the plurality of top pins to pass through the plurality of through holes to lift one by one, so as to cooperate with the first transmission mechanism and the base respectively through the lifting of the plurality of top pins, and transmit the shielding component to the first transmission mechanism or the base, or cooperate with the second transmission mechanism and the base respectively, and transmit the shielding component to the second transmission mechanism or the base.

9. The process chamber for titanium nitride film deposition of claim 2, wherein, The process cavity further comprises a gas inlet assembly and a gas extraction assembly, and the gas inlet assembly and the gas extraction assembly are both in communication with the bottom wall of the process cavity, the gas inlet port of the gas inlet assembly is located between the first auxiliary cavity and the bearing assembly, and the gas extraction port of the gas extraction assembly is located between the second auxiliary cavity and the bearing assembly.

10. A method for depositing a titanium nitride film, characterized in that, The application relates to a process chamber for depositing a titanium nitride film layer, the process chamber comprising a process cavity, a target and a supporting assembly, the target being arranged on a top opening of the process cavity, and the target comprising titanium elements; The supporting assembly is arranged in the process cavity in a liftable manner, and the process chamber further comprises: a transmission mechanism, a shielding component and an auxiliary cavity, the auxiliary cavity being in communication with the process cavity; the shielding component is arranged on the transmission mechanism in a detachable manner; the transmission mechanism is used for selectively placing one of a wafer or the shielding component on the supporting assembly and the other in the auxiliary cavity; when the process chamber performs a barrier layer deposition process, the transmission mechanism transfers the shielding component to the supporting assembly and transfers the wafer to the auxiliary cavity to perform a first-stage barrier layer deposition process; after the target is formed with a substance meeting the requirements of a titanium nitride process, the transmission mechanism transfers the wafer to the supporting assembly and transfers the shielding component to the auxiliary cavity to perform a second-stage barrier layer deposition process; The titanium nitride film deposition method comprises the following steps: placing the shielding component on the supporting assembly; introducing a first process gas into the process chamber; applying direct current power to the target to excite the first process gas to form plasma and bombard the target until the target is formed with a substance meeting the requirements of a titanium nitride process; placing the wafer on the supporting assembly; introducing the first process gas into the process chamber; applying direct current power to the target to excite the first process gas to form plasma and bombard the target to deposit a titanium nitride film layer on the wafer.

11. The method of claim 10, wherein Before the step of placing the shielding component on the supporting assembly, the method further comprises the following steps: placing the wafer on the supporting assembly; introducing a second process gas into the process chamber; applying direct current power to the target to excite the second process gas to form plasma and bombard the target to deposit a titanium element-containing adhesion layer on the wafer.

12. The method of claim 11, wherein the method further comprises: The first process gas comprises argon and nitrogen, and the mixing ratio is 1:1-3:1; and / or, The second process gas comprises argon, and the argon flow rate is 40sccm-60sccm; and / or, The direct current power applied to the target is 5kw-8kw.

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