Method and system for estimating temperature junction temperature of igbt for pure electric vehicle

Abstract

The application provides a method and system for estimating IGBT temperature junction temperature for pure electric vehicles, which comprises the following steps: acquiring IGBT shell temperature T detected by a temperature sensor ntc ; estimating IGBT shell temperature by a state observer through the acquired IGBT shell temperature T detected by the temperature sensor ntc ; and determining estimated IGBT chip temperature according to the estimated IGBT shell temperature. The estimated IGBT chip temperature is determined according to the estimated IGBT chip temperature. In the above technical solution, the difference between the estimated IGBT shell temperature and the measured IGBT shell temperature is added to the feedforward link, the accuracy of the estimated IGBT chip temperature is improved, the estimated IGBT chip temperature is input into a junction temperature estimation temperature processing module, and finally the estimated IGBT temperature is obtained.

Description

TECHNICAL FIELD

[0001] The one or more embodiments of the present specification relate to the technical field of automobiles, and particularly relate to an IGBT temperature junction temperature estimation method and system for a pure electric vehicle. BACKGROUND

[0002] Since the pure electric vehicle is in harsh working conditions, such as the blocked running condition, the chip temperature value of the IGBT is particularly important for the electric drive system to execute the derating strategy. However, the temperature sensor of the current mainstream IGBT module is usually arranged on the shell of the IGBT, so it is necessary to estimate the IGBT chip temperature according to external conditions and load working conditions. SUMMARY

[0003] Therefore, the purpose of the one or more embodiments of the present specification is to provide an IGBT temperature junction temperature estimation method and system for a pure electric vehicle, which improves the temperature estimation capability of the pure electric vehicle.

[0004] In a first aspect, an IGBT temperature junction temperature estimation method for a pure electric vehicle is provided. The IGBT temperature junction temperature estimation method for a pure electric vehicle provided by the present application comprises the following steps:

[0005] obtaining an IGBT shell temperature T detected by a temperature sensor ntc ;

[0006] estimating the IGBT shell temperature by a state observer

[0007] determining the estimated IGBT chip temperature by the IGBT shell temperature T detected by the temperature sensor ntc and the IGBT shell temperature estimated by the state observer

[0008] determining the IGBT chip temperature according to the estimated IGBT chip temperature .

[0009] In the above technical solution, the difference between the estimated IGBT shell temperature and the measured IGBT shell temperature is added to the feedforward link to improve the accuracy of the estimated IGBT chip temperature. The estimated IGBT chip temperature is input into a junction temperature estimation temperature processing module, and finally the estimated IGBT temperature is obtained.

[0010] In a specific implementation, the IGBT shell temperature T detected by the temperature sensor is obtained ntc , specifically:

[0011] obtaining an IGBT shell temperature T detected by a temperature sensor ntc1 ; ​

[0012] IGBT housing temperature T detected by the temperature sensor ntc1 filtering to obtain IGBT housing temperature T excluding electromagnetic interference ntc .

[0013] In a specific implementation, the estimated IGBT chip temperature is determined by the difference between the IGBT housing temperature T detected by the temperature sensor ntc and the IGBT housing temperature estimated by the state observer Specifically,

[0014] In a specific implementation, the estimated IGBT chip temperature is determined by the difference between the IGBT housing temperature T detected by the temperature sensor ntc and the IGBT housing temperature estimated by the state observer

[0015] In a specific implementation, the estimated IGBT chip temperature is determined by the difference between the IGBT housing temperature T detected by the temperature sensor ntc and the IGBT housing temperature estimated by the state observer Specifically,

[0016] The difference between the system input load condition Ploss, the IGBT housing temperature T detected by the temperature sensor ntc and the IGBT housing temperature estimated by the state observer is taken as an input parameter; and is integrated according to the calibration parameters A, B, C, D, E in the state observer to determine the estimated IGBT chip temperature

[0017] In a specific implementation, the IGBT chip temperature is determined according to the estimated IGBT chip temperature Specifically,

[0018] The ambient temperature is obtained;

[0019] The cooling water temperature is obtained;

[0020] The cooling water flow rate is obtained;

[0021] The temperature influence variable y is determined according to the obtained ambient temperature, cooling water temperature and cooling water flow rate;

[0022] The IGBT chip temperature is determined according to the estimated IGBT chip temperature ​​​And temperature impact variable y, determine determine IGBT chip temperature. On the basis of estimated IGBT chip temperature, while introducing three environmental variables of ambient temperature, cooling water temperature and cooling water flow, through the environmental temperature processing module to obtain variable y, add it to the estimated IGBT chip temperature, and finally obtain the estimated IGBT chip temperature. The present application is realized by pure software, which greatly improves the estimation of IGBT chip temperature, and plays a protective role for IGBT working in harsh conditions.

[0023] In a second aspect, a system for estimating IGBT temperature junction temperature for a pure electric vehicle is provided, which comprises:

[0024] An information acquisition module is configured to obtain a detected IGBT housing temperature T ntc ;

[0025] A data processing module is configured to estimate IGBT housing temperature by the detected IGBT housing temperature T ntc ; and the estimated IGBT housing temperature to determine the estimated IGBT chip temperature According to the estimated IGBT chip temperature to determine the IGBT chip temperature.

[0026] In a specific implementation, the data processing module comprises:

[0027] A state observer is configured to estimate IGBT housing temperature by the detected IGBT housing temperature T ntc ; and the estimated IGBT housing temperature to determine the estimated IGBT chip temperature

[0028] A junction temperature estimation temperature processing module is configured to determine the IGBT chip temperature according to the estimated IGBT chip temperature .

[0029] In a specific implementation, the information acquisition module comprises:

[0030] A temperature sensor is configured to obtain a detected IGBT housing temperature T ntc1 ;

[0031] A filtering module is configured to filter the temperature detected by the temperature sensor to obtain an IGBT housing temperature T ntc free of electromagnetic interference.

[0032] In a specific implementation, the information acquisition module is further configured to obtain an ambient temperature, obtain a cooling water temperature, and obtain a cooling water flow.

[0033] The junction temperature estimation temperature processing module is specifically configured to determine a temperature influence variable y according to the obtained ambient temperature, the cooling water temperature and the cooling water flow rate; and determine the IGBT chip temperature according to the estimated IGBT chip temperature and the temperature influence variable y.

[0034] In a third aspect, an automobile is provided, which includes a vehicle body and the IGBT temperature junction temperature estimation system for a pure electric vehicle as described in any one of the preceding aspects arranged in the vehicle body.

[0035] In the above technical solution, the difference between the estimated IGBT housing temperature and the measured IGBT housing temperature is added to the feedforward link to improve the accuracy of the estimated IGBT chip temperature, and the estimated IGBT chip temperature is input to the junction temperature estimation temperature processing module to finally obtain the estimated IGBT temperature.

[0036] In a fourth aspect, an electronic device is provided, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, and the processor implements the method of the first aspect and any one of the possible designs in the first aspect when executing the program.

[0037] In a fifth aspect, a non-transitory computer-readable storage medium is provided, which stores computer instructions for causing the computer to execute the method of the first aspect and any one of the possible designs in the first aspect.

[0038] In a sixth aspect, a computer program product is also provided, which includes instructions that, when executed on a computer, cause the computer to execute the method of the first aspect and any one of the possible designs in the first aspect.

[0039] In addition, the technical effects brought about by any one of the possible designs in the fourth aspect to the sixth aspect can be referred to the effects brought about by different design ways in the method part, which will not be described here again. BRIEF DESCRIPTION OF DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the one or more embodiments of the present specification or the prior art, the drawings needed in the embodiment or prior art description will be briefly introduced as follows. Obviously, the drawings in the following description are only one or more embodiments of the present specification, and other drawings can also be obtained by those skilled in the art without creative labor.

[0041] Figure 1 The structural block diagram of the IGBT temperature junction temperature estimation system for a pure electric vehicle provided by the embodiments of the present application; ​

[0042] Figure 2 A structure block diagram of a junction temperature estimation temperature processing module provided by an embodiment of the application is shown.

[0043] Figure 3 A schematic diagram of a filter provided by an embodiment of the application is shown.

[0044] Figure 4 A structure block diagram of an electronic device provided by an embodiment of the application is shown. DETAILED DESCRIPTION

[0045] To make the objects, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below with reference to specific embodiments and drawings.

[0046] It should be noted that, unless otherwise defined, technical terms or scientific terms used in one or more embodiments of the present disclosure should be understood as their common meanings to those skilled in the art to which the present disclosure belongs. The terms "first", "second" and similar terms used in one or more embodiments of the present disclosure do not represent any order, number or importance, but are only used to distinguish different components. The terms "include" or "contain" and similar terms mean that the elements or objects before the terms encompass the elements or objects listed after the terms and their equivalents, and do not exclude other elements or objects. The terms "connect" or "connected" and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms "up", "down", "left", "right" and the like are only used to represent relative positional relationships, and when the absolute positions of the described objects change, the relative positional relationships may also change accordingly.

[0047] To facilitate understanding of the IGBT junction temperature estimation method for a pure electric vehicle provided by the embodiments of the application, the application scenarios thereof are first described.

[0048] The IGBT junction temperature estimation method for a pure electric vehicle provided by the embodiments of the application is used to determine the temperature of an IGBT chip. Since a pure electric vehicle is in a harsh working condition, for example, a locked-rotor working condition, the chip temperature value of the IGBT is particularly important for the electric drive system to determine whether to execute a derating strategy.

[0049] However, the temperature sensor of the current mainstream IGBT module is usually arranged on the shell of the IGBT, so it is necessary to estimate the IGBT chip temperature according to external conditions and load working conditions. Therefore, the embodiments of the present application provide an IGBT junction temperature estimation method for a pure electric vehicle. The embodiments will be described in detail below with reference to the drawings.

[0050] Reference Figure 1 , Figure 1 A junction temperature estimation control block diagram based on an observer is shown. InFigure 1 In this context, Ploss represents the system input load condition, whose value is obtained from the IGBT datasheet. Once the load condition is given, the actual system outputs the temperature sensor-reported value T. ntc1 After passing it through a filter, the casing temperature T, which eliminates electromagnetic interference, is obtained. ntc .

[0051] The dashed line represents the state observer, where A, B, C, D, and E are calibration parameters, and ∫ represents the integral sign. For the estimated IGBT chip temperature, This represents the IGBT case temperature estimated using a state observer. Figure 1 In this process, the difference between the estimated IGBT case temperature and the measured IGBT case temperature is added to the feedforward circuit, and the estimated IGBT chip temperature is input to the junction temperature estimation processing module to finally obtain the estimated IGBT temperature.

[0052] The following is combined with Figure 1 The method for estimating the junction temperature of IGBTs for pure electric vehicles provided in this application includes the following steps:

[0053] Step 001: Obtain the IGBT housing temperature T detected by the temperature sensor. ntc ;

[0054] Specifically, the temperature T of the IGBT housing detected by the temperature sensor is obtained. ntc1 In practical use, once the load conditions are given, the temperature sensor reports the value T after passing through the actual system. ntc1 The reported value is the temperature detected by the temperature sensor. The actual system refers to the vehicle's actual operating system, which may include the engine, axles, wheels, etc.

[0055] The temperature T of the IGBT housing detected by the temperature sensor ntc1 Filtering is performed to obtain the IGBT case temperature T after eliminating electromagnetic interference. ntc .

[0056] refer to Figure 3 , Figure 3 A schematic diagram of the filter is shown. Figure 3 In this context, α represents the filtering coefficient. This filter eliminates the influence of electromagnetic interference on the temperature sensor data. In practical operation, the temperature T of the IGBT housing detected by the temperature sensor is... ntc1 And the filter coefficient α is used as the input. After filtering in the filter, the IGBT housing temperature T, which eliminates electromagnetic interference, can be obtained. ntc .in, Figure 3The symbols 'x', '+', and '-' shown represent the mathematical processing performed on the signal during the filtering process. This processing is standard in existing technology and will not be described in detail here.

[0057] Step 002: Estimate the IGBT case temperature using a state observer.

[0058] A state observer is a type of dynamic system that derives estimated values ​​of state variables based on measured values ​​of the system's external variables (input and output variables); it is also known as a state reconstructor. In this embodiment, the state observer is used to predict the IGBT housing temperature using a loading observer.

[0059] Step 003: Obtain the IGBT housing temperature T detected by the temperature sensor. ntc ; and the IGBT case temperature estimated by the state observer. Determine the estimated IGBT chip temperature

[0060] Specifically, the IGBT housing temperature T is detected by the temperature sensor. ntc and the IGBT case temperature estimated by the state observer. The difference between them determines the estimated IGBT chip temperature.

[0061] In the specific calculation, the system input load condition Ploss and the IGBT case temperature T detected by the temperature sensor are used. ntc IGBT case temperature estimated by the state observer The difference between the values ​​is used as an input parameter; this is then integrated with the calibration parameters A, B, C, D, and E from the state observer to determine the estimated IGBT chip temperature. like Figure 1 In the diagram, A, B, C, D, and E are calibration parameters, and ∫ represents the integral symbol. For the estimated IGBT chip temperature, This represents the IGBT housing temperature estimated using a state observer.

[0062] In specific estimations, the IGBT case temperature is estimated. and the measured IGBT case temperature T ntc The difference increases at point D in the feedforward stage, and is related to the table lookup temperature at point A after the loss Ploss. The temperature at point c, combined with the temperature at point B, is used to obtain the estimated chip temperature through integration. The estimated IGBT chip temperature is input into the junction temperature estimation processing module to finally obtain the estimated IGBT temperature.

[0063] Step 004: determining the IGBT chip temperature according to the estimated IGBT chip temperature determining the IGBT chip temperature.

[0064] Specifically, the IGBT chip temperature is determined according to the estimated IGBT chip temperature determining the IGBT chip temperature, specifically:

[0065] obtaining the ambient temperature;

[0066] obtaining the cooling water temperature;

[0067] obtaining the cooling water flow rate;

[0068] determining the temperature influence variable y according to the obtained ambient temperature, cooling water temperature and cooling water flow rate;

[0069] determining the IGBT chip temperature according to the estimated IGBT chip temperature and the temperature influence variable y.

[0070] Reference Figure 2 is shown, Figure 2 the detailed steps of the junction temperature estimation temperature processing module, on the basis of the estimated IGBT chip temperature, simultaneously introducing three environmental variables of ambient temperature, cooling water temperature and cooling water flow rate, obtaining variable y through the ambient temperature processing module, adding it to the estimated IGBT chip temperature for operation, and finally obtaining the estimated IGBT chip temperature.

[0071] In the above technical solution, the difference between the estimated IGBT shell temperature and the measured IGBT shell temperature is added to the feedforward link, the accuracy of the estimated IGBT chip temperature is improved, the estimated IGBT chip temperature is input to the junction temperature estimation temperature processing module, and finally the estimated IGBT temperature is obtained.

[0072] In the manner shown in Figure 2 , on the basis of the estimated IGBT chip temperature, simultaneously introducing three environmental variables of ambient temperature, cooling water temperature and cooling water flow rate, obtaining variable y through the ambient temperature processing module, adding it to the estimated IGBT chip temperature for operation, and finally obtaining the estimated IGBT chip temperature. The present application is realized by pure software, which greatly improves the estimation of IGBT chip temperature and plays a protective role for IGBT working in harsh working conditions.

[0073] As can be seen from the above description, by adding the difference between the estimated IGBT shell temperature and the measured IGBT shell temperature to the feedforward link, the accuracy of the estimated IGBT chip temperature is improved, the estimated IGBT chip temperature is input to the junction temperature estimation temperature processing module, and finally the estimated IGBT temperature is obtained.

[0074] The embodiment of the present application further provides an IGBT temperature junction temperature estimation system for a pure electric vehicle, which comprises an information acquisition module and a data processing module.

[0075] The information acquisition module is configured to acquire the detected IGBT shell temperature T ntc ; and the data processing module is configured to estimate the IGBT shell temperature T by the detected IGBT shell temperature T ntc ; and the estimated IGBT shell temperature T to determine the estimated IGBT chip temperature T ; and determine the IGBT chip temperature T according to the estimated IGBT chip temperature T

[0076] The specific working principles of the information acquisition module and the data processing module can be referred to the related descriptions in the above method.

[0077] In the specific setting, the information acquisition module comprises a temperature sensor and a filtering module. The temperature sensor is configured to acquire the detected IGBT shell temperature T ntc1 ; and the filtering module is configured to filter the temperature detected by the temperature sensor to obtain the IGBT shell temperature T ntc excluding electromagnetic interference. The specific working principles can be referred to the related descriptions in the method.

[0078] The data processing module comprises a state observer and a junction temperature estimation temperature processing module. The state observer is configured to estimate the IGBT shell temperature T by the detected IGBT shell temperature T ntc ; and the estimated IGBT shell temperature T to determine the estimated IGBT chip temperature T ; and the junction temperature estimation temperature processing module is configured to determine the IGBT chip temperature T according to the estimated IGBT chip temperature T

[0079] In addition, the information acquisition module is further configured to acquire an environment temperature, acquire a cooling water temperature and acquire a cooling water flow rate; and the junction temperature estimation temperature processing module is specifically configured to determine a temperature influence variable y according to the acquired environment temperature, cooling water temperature and cooling water flow rate; determine the IGBT chip temperature T according to the estimated IGBT chip temperature T

[0080] The embodiment of the present application further provides an automobile, which comprises a vehicle body and the IGBT temperature junction temperature estimation system for a pure electric vehicle described in any one of the above.

[0081] In the technical solution, the difference between the estimated IGBT shell temperature and the measured IGBT shell temperature is added to the feedforward link to improve the accuracy of the estimated IGBT chip temperature, and the estimated IGBT chip temperature is input to the junction temperature estimation temperature processing module to finally obtain the estimated IGBT temperature.

[0082] The embodiment of the application further provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, and the processor executes the program to implement the method of any one of the possible designs.

[0083] The embodiment of the application further provides a non-transitory computer readable storage medium, which stores computer instructions for causing the computer to execute the method of any one of the possible designs.

[0084] The embodiment of the application further provides a computer program product, which includes instructions for causing the computer to execute the method of any one of the possible designs.

[0085] It should be noted that the method of one or more embodiments of the present specification can be executed by a single device, such as a computer or a server, etc. The method of the present embodiment can also be applied to a distributed scenario, and completed by multiple devices cooperating with each other. In the case of such a distributed scenario, one of the multiple devices can only execute one or more steps in the method of one or more embodiments of the present specification, and the multiple devices will interact with each other to complete the method.

[0086] The above describes specific embodiments of the present specification. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recited in the claims can be executed in an order different from that in the embodiments and still achieve the desired result. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or sequential order shown to achieve the desired results. In some embodiments, multi-task processing and parallel processing are possible or can be advantageous.

[0087] For the convenience of description, the above device is described as various modules in terms of functions. Of course, the functions of each module can be implemented in the same or more software and / or hardware when implementing one or more embodiments of the present specification.

[0088] The device of the above embodiment is used to implement the corresponding method in the foregoing embodiments, and has the beneficial effects of the corresponding method embodiments, which are not described here again.

[0089] Figure 4 A more specific electronic device hardware structure diagram provided by the embodiment is shown, which can include a processor 1010, a memory 1020, an input / output interface 1030, a communication interface 1040, and a bus 1050. The processor 1010, the memory 1020, the input / output interface 1030, and the communication interface 1040 are connected to each other through the bus 1050 for internal communication.

[0090] The processor 1010 can be implemented by a general-purpose CPU (Central Processing Unit), a microprocessor, an ASIC (Application Specific Integrated Circuit), or one or more integrated circuits, etc., for executing related programs to implement the technical solutions provided by the embodiments of the present specification.

[0091] The memory 1020 can be implemented by a ROM (Read Only Memory), a RAM (Random Access Memory), a static storage device, a dynamic storage device, etc. The memory 1020 can store an operating system and other application programs, and when the technical solutions provided by the embodiments of the present specification are implemented by software or firmware, the related program codes are stored in the memory 1020 and called and executed by the processor 1010.

[0092] The input / output interface 1030 is used to connect input / output modules to realize information input and output. The input / output modules can be configured as components in the device (not shown in the figure) or externally connected to the device to provide corresponding functions. The input device can include a keyboard, a mouse, a touch screen, a microphone, various sensors, etc., and the output device can include a display, a speaker, a vibrator, an indicator light, etc.

[0093] The communication interface 1040 is used to connect a communication module (not shown in the figure) to realize the communication interaction between the device and other devices. The communication module can realize communication through a wired manner (such as USB, network cable, etc.) or through a wireless manner (such as mobile network, WIFI, Bluetooth, etc.).

[0094] The bus 1050 includes a channel for transmitting information between various components (such as the processor 1010, the memory 1020, the input / output interface 1030, and the communication interface 1040) of the device.

[0095] It should be noted that although the above device only shows the processor 1010, the memory 1020, the input / output interface 1030, the communication interface 1040 and the bus 1050, in the specific implementation process, the device can also include other components necessary for normal operation. In addition, those skilled in the art can understand that the above device can also only contain the components necessary to implement the embodiments of the present specification, and does not have to contain all the components shown in the figure.

[0096] The computer readable medium of the present embodiment includes permanent and non-permanent, removable and non-removable media, which can realize information storage by any method or technology. The information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disc read-only memory (CD-ROM), digital versatile disc (DVD) or other optical storage, magnetic cassette, magnetic tape, magnetic disk storage or other magnetic storage device, or any other non-transmission medium that can be used to store information accessible by a computing device.

[0097] Those skilled in the art should understand that the above discussion of any embodiment is only exemplary and is not intended to imply that the scope of the present disclosure (including claims) is limited to these examples; under the idea of the present disclosure, the above embodiments or technical features in different embodiments can also be combined, the steps can be implemented in any order, and there are many other changes of different aspects of one or more embodiments of the present specification as described above. In order to be brief, they are not provided in detail.

[0098] Additionally, to simplify the description and discussion, and so as not to obscure one or more embodiments of the description, well-known power / ground connections to integrated circuit (IC) chips and other components can or can not be shown in the provided figures. Furthermore, devices can be shown in block diagram form in order to avoid obscuring one or more embodiments of the description, and also in view of the fact that details of implementation of the block diagram devices are highly dependent on the platform within which the one or more embodiments of the description are being implemented (i.e., these details should be apparent to those skilled in the art with the benefit of this description). Where specific details of certain hardware are set forth in order to describe an exemplary embodiment of the present disclosure, it is to be understood that the embodiment(s) described and illustrated can be implemented with any combination of hardware and software that is content adaptive. It will be apparent to those skilled in the art that substantial variations can be made in accordance with this specification. Thus, the description is to be regarded as illustrative instead of restrictive.

[0099] While the present disclosure has been described in conjunction with the specific embodiments thereof, many alternatives, modifications and variations will be apparent to those skilled in the art. For example, other memory architectures (e.g., dynamic RAM (DRAM)) can use the embodiments discussed.

[0100] It is intended that the one or more embodiments of the description encompass all such alternatives, modifications and variations as fall within the broad scope of the appended claims. Accordingly, any and all departures from the one or more embodiments of the description are intended to come within the scope of the disclosure.

Claims

1. A method for estimating temperature junction temperature of an IGBT for a pure electric vehicle, characterized by, The method comprises the following steps: acquiring an IGBT housing temperature T detected by a temperature sensor ntc ; Estimating igbt housing temperature by state observer IGBT housing temperature T detected by the acquired temperature sensor ntc ; and IGBT housing temperature estimated by the state observer determining the estimated IGBT chip temperature Specifically, the difference between the IGBT housing temperature T detected by the acquired temperature sensor ntc and the IGBT housing temperature estimated by the state observer determining the estimated IGBT chip temperature Specifically, the difference between the system input load working condition Ploss, the IGBT housing temperature T detected by the acquired temperature sensor ntc and the IGBT housing temperature estimated by the state observer is taken as an input parameter; and the estimated IGBT chip temperature is determined by integral processing according to the calibration parameters A, B, C, D, E in the state observer In the specific estimation, the difference between the estimated IGBT housing temperature and the measured IGBT housing temperature T ntc is added to the feedforward link D, and the temperature at A after the loss Ploss is added to the temperature at C, and the two are jointly applied to B, and the chip estimated temperature is obtained by integration The estimated IGBT chip temperature is input to the junction temperature estimation temperature processing module, and the estimated IGBT temperature is finally obtained; According to the estimated IGBT chip temperature Determine the IGBT chip temperature, specifically: according to the obtained ambient temperature, cooling water temperature and cooling water flow, determine the temperature influence variable y; According to the estimated IGBT chip temperature and the temperature influencing variable y, the IGBT chip temperature is determined.

2. The method of IGBT junction temperature estimation for pure electric vehicles of claim 1, wherein, the housing temperature T detected by the acquisition temperature sensor ntc ; in particular: Obtaining an IGBT housing temperature T detected by a temperature sensor ntc1 ; The IGBT housing temperature T detected by the temperature sensor ntc1 The IGBT housing temperature T is filtered to exclude electromagnetic interference ntc .

3. The method of IGBT junction temperature estimation for pure electric vehicles of claim 2, wherein, The estimated IGBT chip temperature The IGBT chip temperature is determined, in particular: obtaining an ambient temperature; obtaining a cooling water temperature; obtaining a cooling water flow rate.

4. A system for estimating the junction temperature of an IGBT used in a pure electric vehicle, characterized in that, The system comprises: Information collection module: obtain the detected IGBT shell temperature T ntc ; Data processing module: for estimating IGBT housing temperature By detecting IGBT housing temperature T ntc ; and estimated IGBT housing temperature Determine estimated IGBT chip temperature According to the estimated IGBT chip temperature Determine IGBT chip temperature.

5. The system for estimating IGBT temperature junction temperature for pure electric vehicle according to claim 4, characterized in that, the data processing module comprises: State observer for estimating IGBT housing temperature and by the detected IGBT housing temperature T ntc ; and the estimated IGBT housing temperature determining an estimated IGBT chip temperature a junction temperature estimation temperature processing module for determining an estimated IGBT chip temperature determining an IGBT chip temperature.

6. The system for IGBT temperature junction temperature estimation for pure electric vehicles of claim 5, wherein, the information acquisition module comprises: Temperature sensor: Acquire the detected IGBT housing temperature T ntc1 ; The filter module is configured to filter the temperature detected by the temperature sensor to obtain an IGBT housing temperature T excluding electromagnetic interference. ntc .

7. The system for estimating IGBT temperature junction temperature for pure electric vehicle according to claim 6, characterized in that, the information acquisition module is further configured to obtain an ambient temperature, obtain a cooling water temperature, and obtain a cooling water flow rate; The junction temperature estimation temperature processing module is specifically configured to determine a temperature influence variable y according to the obtained ambient temperature, the cooling water temperature and the cooling water flow rate; and determine the IGBT chip temperature according to the estimated IGBT chip temperature and the temperature influence variable y.

8. An automobile characterized by comprising: The system comprises a vehicle body and an IGBT temperature junction temperature estimation system for pure electric vehicle as claimed in any one of claims 4-6 arranged in the vehicle body.

9. An electronic device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, The processor executes the program to implement the method for estimating IGBT temperature junction temperature for pure electric vehicle as claimed in any one of claims 1-3.

10. A non-transitory computer-readable storage medium, comprising: The non-transitory computer readable storage medium stores computer instructions for causing the computer to execute the method for estimating IGBT temperature junction temperature for pure electric vehicle as claimed in any one of claims 1-3.

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