Magnetic sensors and magnetic sensor systems

Abstract

The magnetic sensor includes a first path and a second path, multiple structures, and multiple first electrodes and multiple second electrodes. The first path includes at least one first array. The second path includes at least one second array. The at least one first array and at least one second array are arranged in a first direction. Each of the at least one first array and at least one second array includes an odd number of structures arranged in a second direction.

Description

Technical Field

[0001] The present invention relates to a magnetic sensor and a magnetic sensor system comprising a plurality of magnetoresistive effect elements connected in series. Background Technology

[0002] In recent years, magnetic sensors have been used in various applications. Among magnetic sensors, those employing a spin valve-type magnetoresistive element disposed on a substrate are known. For example, TMR (tunneling magnetoresistive) elements or GMR (giant magnetoresistive) elements can be used as magnetoresistive elements. As a GMR element, for example, a CPP (Current Perpendicular to Plane) type GMR element can be used, where current flows in a direction substantially perpendicular to the planes of the layers constituting the GMR element.

[0003] When a TMR element or a CPP-type GMR element is used as the magnetoresistive effect element, multiple magnetoresistive effect elements are connected in series via multiple lower electrodes and multiple upper electrodes. For example, Chinese Patent Application Publication No. 107894575A discloses a magnetic sensor having multiple magnetoresistive effect elements. In this magnetic sensor, magnetoresistive effect elements are disposed near both ends of the lower electrode in the longitudinal direction on the upper surface of each of the multiple lower electrodes. Furthermore, the multiple magnetoresistive effect elements are connected in series by electrically connecting two adjacent magnetoresistive effect elements disposed on two adjacent lower electrodes in the longitudinal direction of the lower electrodes via each of the multiple upper electrodes.

[0004] Here, a column of multiple magnetoresistive effect elements arranged in one row is called an array. In an array, multiple magnetoresistive effect elements are connected in series using multiple lower electrodes and multiple upper electrodes. When arrays constituting one resistive section are arranged alternately with arrays constituting another resistive section, it is necessary to design the arrays to be connected every other column.

[0005] In addition, in order to suppress deviations in characteristics such as resistance values ​​between multiple arrays, it is necessary to design the arrays so that the number of lower electrodes in each array is the same as the number of upper electrodes. Summary of the Invention

[0006] The object of the present invention is to provide a magnetic sensor and a magnetic sensor system that connects multiple arrays every other column and enables the number of multiple first electrodes disposed in the multiple arrays to be the same as the number of multiple second electrodes.

[0007] The magnetic sensor of the present invention comprises: a first path and a second path for current to flow respectively; a plurality of structures disposed in the first path and the second path; and a plurality of first electrodes and a plurality of second electrodes connected in series with the plurality of structures. Here, the column of the plurality of structures arranged in a single column is referred to as an array. The first path includes at least one first array. The second path includes at least one second array. The at least one first array and the at least one second array are arranged in a first direction. Each of the at least one first array and the at least one second array includes an odd number of structures from the plurality of structures, which are arranged in a second direction. At least one of the odd number of structures is a structure containing a magnetoresistive effect element. The plurality of first electrodes and the plurality of second electrodes are disposed at different positions in a third direction, and in each of the at least one first array and the at least one second array, the first electrodes and the second electrodes are alternately disposed one by one in the direction of current flow.

[0008] In the magnetic sensor of the present invention, each of the odd number of structures may have a first surface and a second surface located at both ends in the third direction. The first surface may be connected to one of a plurality of first electrodes. The second surface may be connected to one of a plurality of second electrodes.

[0009] Furthermore, in the magnetic sensor of the present invention, the number of multiple first electrodes disposed in at least one first array, the number of multiple second electrodes disposed in at least one first array, the number of multiple first electrodes disposed in at least one second array, and the number of multiple second electrodes disposed in at least one second array can be the same.

[0010] Furthermore, in the magnetic sensor of the present invention, each of the odd number of structures can be a structure containing a magnetoresistive element.

[0011] Furthermore, in the magnetic sensor of the present invention, at least one of the odd number of structures, other than the structure containing the magnetoresistive effect element, is a connection structure configured to connect one of the plurality of first electrodes and one of the plurality of second electrodes.

[0012] Furthermore, in the magnetic sensor of the present invention, the number of magnetoresistive effect elements included in the first path can be the same as the number of magnetoresistive effect elements included in the second path.

[0013] Furthermore, in the magnetic sensor of the present invention, the first path may include multiple first arrays as at least one first array. The second path may include multiple second arrays as at least one second array. The multiple first arrays and multiple second arrays may be configured in a manner in which the first arrays and the second arrays are arranged alternately in the first direction.

[0014] Furthermore, in the magnetic sensor of the present invention, the number of magnetoresistive effect elements included in the first path and the second path can each be an even number.

[0015] Furthermore, in the magnetic sensor of the present invention, at least one first array may include a first specific array located at an end in a direction parallel to the first direction. At least one second array may include a second specific array located at an end in a direction parallel to the first direction. When viewed from a third direction, the direction of current flow in the first specific array and the direction of current flow in the second specific array may be the same or opposite to each other.

[0016] Furthermore, the magnetic sensor of the present invention may also include at least one magnetic yoke made of a soft magnetic material. The at least one magnetic yoke may have a first end face and a second end face located at both ends in a first direction. At least one first array may be disposed near the first end face. At least one second array may be disposed near the second end face.

[0017] Furthermore, the magnetic sensor of the present invention may also include: a power supply terminal; one or two signal terminals; one or two first signal paths connecting the power supply terminal to the one or two signal terminals; and one or two second signal paths connecting the one or two signal terminals to ground. The first path and the second path may be two of the one or two first signal paths and the one or two second signal paths.

[0018] Furthermore, the magnetic sensor of the present invention may also include: a first power supply terminal; a second power supply terminal; one or two first signal terminals; one or two second signal terminals; one or two first signal paths connecting the first power supply terminal to the one or two first signal terminals; one or two second signal paths connecting the one or two first signal terminals to ground; one or two third signal paths connecting the second power supply terminal to the one or two second signal terminals; and one or two fourth signal paths connecting the one or two second signal terminals to ground. The first path may be one of one or two first signal paths and one or two second signal paths. The second path may be one of one or two third signal paths and one or two fourth signal paths.

[0019] Furthermore, in the magnetic sensor of the present invention, the first path may further include: a first sub-array disposed between one end of the first path and at least one first array; and a second sub-array disposed between the other end of the first path and at least one first array. The second path may include: a third sub-array disposed between one end of the second path and at least one second array; and a fourth sub-array disposed between the other end of the second path and at least one second array. Each of the first, second, third, and fourth sub-arrays may include a plurality of structures equal to an odd number of structures. The structures equal to an odd number of structures may be arranged in a second direction. At least one of the structures equal to the odd number of structures may be a structure containing a magnetoresistive element. The first subarray and one end of the first path, the second subarray and the other end of the first path, the third subarray and one end of the second path, and the fourth subarray and the other end of the second path are each connected through one of a plurality of second electrodes.

[0020] Furthermore, in the magnetic sensor of the present invention, the first path may further include: a plurality of first sub-arrays disposed between one end of the first path and at least one first array; and a plurality of second sub-arrays disposed between the other end of the first path and at least one first array. The second path may further include: a plurality of third sub-arrays disposed between one end of the second path and at least one second array; and a plurality of fourth sub-arrays disposed between the other end of the second path and at least one second array. Each of the plurality of first sub-arrays, each of the plurality of second sub-arrays, each of the plurality of third sub-arrays, and each of the plurality of fourth sub-arrays comprises a plurality of structures, fewer than an odd number of structures, or a single structure. Each of the plurality of structures fewer than an odd number of structures and each of the single structure may be a structure comprising a magnetoresistive element.

[0021] Furthermore, when the first path includes multiple first sub-arrays and multiple second sub-arrays, and the second path includes multiple third sub-arrays and multiple fourth sub-arrays, in terms of the number of structures contained in each of the multiple first sub-arrays, the first sub-array closer to one end of the first path contains fewer structures. Similarly, in terms of the number of structures contained in each of the multiple second sub-arrays, the second sub-array closer to the other end of the first path contains fewer structures. Likewise, in terms of the number of structures contained in each of the multiple third sub-arrays, the third sub-array closer to one end of the second path contains fewer structures. And in terms of the number of structures contained in each of the multiple fourth sub-arrays, the fourth sub-array closer to the other end of the second path contains fewer structures.

[0022] Furthermore, the magnetic sensor of the present invention may also include multiple electrode plates connected to the first path and the second path. The multiple electrode plates may be arranged at the same position in the third direction.

[0023] Furthermore, in the magnetic sensor of the present invention, a portion of the first path and a portion of the second path may be configured at different positions in the third direction and connected to each other via a connecting structure.

[0024] Furthermore, the magnetic sensor of the present invention can be configured to detect one directional component of the magnetic field of the object. Alternatively, the magnetic sensor of the present invention can also be configured to detect two directional components of the magnetic field of the object.

[0025] The magnetic sensor system of the present invention includes the magnetic sensor of the present invention and a magnetic field generating unit that generates a predetermined magnetic field.

[0026] In the magnetic sensor and magnetic sensor system of the present invention, at least one first array and at least one second array each contain an odd number of structures. Thus, according to the present invention, the first array and the second array can be connected every other column, and the number of plurality of first electrodes and plurality of second electrodes disposed in the first array and the second array, respectively, can be the same.

[0027] Other objects, features and effects of the present invention will become fully apparent from the following description. Attached Figure Description

[0028] Figure 1 This is a circuit diagram showing the circuit structure of the magnetic sensor according to the first embodiment of the present invention.

[0029] Figure 2 This is a perspective view showing a portion of the magnetic sensor according to the first embodiment of the present invention.

[0030] Figure 3 This is a top view showing a portion of the magnetic sensor according to the first embodiment of the present invention.

[0031] Figure 4 This is a side view showing a portion of the magnetic sensor according to the first embodiment of the present invention.

[0032] Figure 5 This is a perspective view showing the magnetoresistive effect element in the first embodiment of the present invention.

[0033] Figure 6 This is a perspective view showing the first array and the second array in the first embodiment of the present invention.

[0034] Figure 7 This is a top view showing the plurality of first arrays and plurality of second arrays in the first embodiment of the present invention.

[0035] Figure 8 This is a top view showing the first sub-array and the third sub-array in the first embodiment of the present invention.

[0036] Figure 9 This is a top view showing the second and fourth sub-arrays in the first embodiment of the present invention.

[0037] Figure 10 This is a top view showing the plurality of first arrays and plurality of second arrays in the second embodiment of the present invention.

[0038] Figure 11 This is a top view showing the plurality of first arrays and plurality of second arrays in the third embodiment of the present invention.

[0039] Figure 12 This is a circuit diagram showing the circuit structure of the first detection circuit of the magnetic sensor according to the fourth embodiment of the present invention.

[0040] Figure 13 This is a circuit diagram showing the circuit structure of the second detection circuit of the magnetic sensor according to the fourth embodiment of the present invention.

[0041] Figure 14 This is a top view showing a portion of the magnetic sensor according to the fourth embodiment of the present invention.

[0042] Figure 15 This is a side view showing a portion of the magnetic sensor according to the fourth embodiment of the present invention.

[0043] Figure 16 This is a top view showing the plurality of first sub-arrays and the plurality of third sub-arrays in the fourth embodiment of the present invention.

[0044] Figure 17 This is a perspective view showing important parts of the magnetic sensor system according to the fifth embodiment of the present invention. Detailed Implementation

[0045] [First Implementation]

[0046] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. First, referring to... Figure 1 The general structure of the magnetic sensor 1 according to the first embodiment of the present invention will be described. Figure 1This is a circuit diagram showing the circuit structure of the magnetic sensor 1. The magnetic sensor 1 includes: a power supply terminal; one or two signal terminals; one or two first signal paths connecting the power supply terminal to the one or two signal terminals; and one or two second signal paths connecting the one or two signal terminals to ground. The magnetic sensor 1 further includes a ground terminal. In this embodiment, specifically, as the power supply terminal, ground terminal, signal terminal, first signal path, and second signal path, the magnetic sensor 1 includes: a power supply terminal V1; a ground terminal G1; two signal terminals E1 and E2; a signal path P1 connecting the power supply terminal V1 and signal terminal E1; a signal path P4 connecting the power supply terminal V1 and signal terminal E2; a signal path P2 connecting signal terminal E1 and ground terminal G1; and a signal path P3 connecting signal terminal E2 and ground terminal G1. A predetermined power supply voltage can be applied to the power supply terminal V1. The ground terminal G1 is connected to ground. Current flows through signal paths P1 to P4 respectively.

[0047] The magnetic sensor 1 further includes: a resistive section R1 disposed on signal path P1, a resistive section R2 disposed on signal path P2, a resistive section R3 disposed on signal path P3, and a resistive section R4 disposed on signal path P4. Each of the resistive sections R1 to R4 includes a plurality of magnetoresistive effect elements 20. Hereinafter, the magnetoresistive effect elements will be referred to as MR elements.

[0048] The magnetic sensor 1 generates two signals corresponding to the potentials of signal terminals E1 and E2, or a signal corresponding to the potential difference between signal terminals E1 and E2, as at least one detection signal.

[0049] Next, refer to Figures 2-4 The structure of magnetic sensor 1 will be described in detail. Figure 2 This is a three-dimensional view showing a portion of the magnetic sensor 1. Figure 3 This is a top view showing a portion of magnetic sensor 1. Figure 4 This is a side view showing a portion of magnetic sensor 1.

[0050] Here, as Figure 1 and Figure 2 As shown, the X, Y, and Z directions are defined. The X, Y, and Z directions are orthogonal to each other. Furthermore, the opposite direction of the X direction is defined as the -X direction, the opposite direction of the Y direction as the -Y direction, and the opposite direction of the Z direction as the -Z direction. Additionally, the position in front of the reference position in the Z direction is referred to as "above," and the position opposite to "above" relative to the reference position is referred to as "below." The direction parallel to the X direction corresponds to the "first direction" in this invention. The direction parallel to the Y direction corresponds to the "second direction" in this invention. The direction parallel to the Z direction corresponds to the "third direction" in this invention.

[0051] The magnetic sensor 1 also includes at least one magnetic yoke made of a soft magnetic material. When viewed in a direction parallel to the Z-direction, for example, when viewed from above, the at least one magnetic yoke has a shape that is longer in the Y-direction. Furthermore, the at least one magnetic yoke is configured to generate an output magnetic field when it receives an input magnetic field component that includes an input magnetic field component in a direction parallel to the Z-direction. The output magnetic field includes an output magnetic field component in a direction parallel to the X-direction that changes accordingly with the input magnetic field component.

[0052] like Figure 2 and Figure 4 As shown, in this embodiment, in particular, the magnetic sensor 1 includes at least one plurality of magnetic yokes 51 arranged in an X-direction configuration. Each of the plurality of magnetic yokes 51 has, for example, a cuboid shape that is longer in the Y-direction. The plurality of magnetic yokes 51 have identical shapes. Each of the plurality of magnetic yokes 51 has a first end face 51a and a second end face 51b located at both ends in a direction parallel to the X-direction. In each of the plurality of magnetic yokes 51, the first end face 51a is located at one end in the -X-direction, and the second end face 51b is located at one end in the X-direction.

[0053] The magnetic sensor 1 further includes: a plurality of structures disposed in signal paths P1 to P4; and a plurality of first electrodes 81 and a plurality of second electrodes 82 connecting the plurality of structures in series. The plurality of first electrodes 81 and the plurality of second electrodes 82 are shown in the following description. Figures 6-9 Each of the signal paths P1 to P4 contains at least one array. Each array contains an odd number of constructs arranged in a direction parallel to the Y direction. At least one of the odd number of constructs is a construct containing the MR element 20.

[0054] In this embodiment, each of the signal paths P1 to P4 specifically includes multiple arrays. Each of the multiple arrays includes five structures. Each of the five structures includes an MR element 20.

[0055] The structure containing MR element 20 may be a structure containing only one MR element 20, or a structure containing two or more MR elements 20 connected in parallel. In particular, in the following description, a structure containing only one MR element 20 is sometimes simply referred to as MR element 20.

[0056] Each of the signal paths P1 to P4 further includes two sub-arrays. Each of the two sub-arrays includes the same number of constructs as the odd number of constructs mentioned above (i.e., five). The five constructs are arranged in a direction parallel to the Y direction. At least one of the five constructs is a construct containing an MR element 20. In this embodiment, in particular, each of the five constructs is a construct containing an MR element 20.

[0057] Signal path P1 contains multiple arrays and two sub-arrays, which constitute resistor section R1. Signal path P2 contains multiple arrays and two sub-arrays, which constitute resistor section R2. Signal path P3 contains multiple arrays and two sub-arrays, which constitute resistor section R3. Signal path P4 contains multiple arrays and two sub-arrays, which constitute resistor section R4.

[0058] The number of MR elements 20 contained in each of the signal paths P1 to P4 is the same. Alternatively, the number of MR elements 20 contained in each of the signal paths P1 to P4 can also be an even number.

[0059] For each yoke 51, two arrays 61A and 61B are arranged in a direction parallel to the X direction. The two arrays 61A and 61B corresponding to the yoke 51 are located near the -Z end of the yoke 51. Array 61A corresponding to the yoke 51 is located near the first end face 51a of the yoke 51. Array 61B corresponding to the yoke 51 is located near the second end face 51b of the yoke 51. Furthermore, the plurality of arrays 61A and the plurality of arrays 61B are arranged in a manner that alternates between arrays 61A and arrays 61B in a direction parallel to the X direction.

[0060] Arrays 61A and 61B are contained in different signal paths. Although not shown, the magnetic sensor 1 includes: a first region for configuring resistive sections R1 and R4; and a second region for configuring resistive sections R2 and R3. In the first region, the arrays contained in signal path P1 and signal path P4 correspond to arrays 61A and 61B, respectively. In the second region, the arrays contained in signal path P2 and signal path P3 correspond to arrays 61A and 61B, respectively. Figures 2-4 It indicates a portion of either region 1 or region 2.

[0061] Here, in region 1 or region 2, the array 61A located at the end in the X direction among the multiple arrays 61A is referred to as a specific array 61A, and the array 61B located at the end in the X direction among the multiple arrays 61B is referred to as a specific array 61B. Specific arrays 61A and 61B are also two arrays 61A and 61B corresponding to one magnetic yoke 51. When viewed from the Z direction, the direction of current flow in specific array 61A is the same as the direction of current flow in specific array 61B. The above description of specific arrays 61A and 61B also applies to the other two arrays 61A and 61B corresponding to another magnetic yoke 51.

[0062] The magnetic sensor 1 may also include at least one shielding element formed of a soft magnetic material. When viewed from a direction parallel to the Z direction, for example, when viewed from above, the at least one shielding element is positioned to overlap with the plurality of magnetic yokes 51. Furthermore, when viewed from above, the plurality of magnetic yokes 51 are positioned inside the outer edge of the at least one shielding element.

[0063] exist Figure 3 In the diagram, symbol 80 represents a wiring section consisting of multiple first electrodes 81 and multiple second electrodes 82. Although not shown, the magnetic sensor 1 also includes a sensor substrate and an insulating section. The insulating section is made of insulating material and covers the multiple MR elements 20 and the wiring section 80.

[0064] Next, refer to Figure 5 An example of the structure of MR element 20 will be described. Figure 5 This is a perspective view of the MR element 20. In this example, the MR element 20 includes: a magnetized fixed layer 22 with a predetermined magnetization direction; a magnetized free layer 24 with a magnetization direction that can change accordingly based on the applied magnetic field; a gap layer 23 disposed between the magnetized fixed layer 22 and the free layer 24; and an antiferromagnetic layer 21. The antiferromagnetic layer 21, the magnetized fixed layer 22, the gap layer 23, and the free layer 24 are stacked sequentially. The antiferromagnetic layer 21 is made of an antiferromagnetic material and has exchange coupling with the magnetized fixed layer 22, thereby fixing the magnetization direction of the magnetized fixed layer 22.

[0065] MR element 20 can be a TMR (tunneling magnetoresistance) element or a CPP (current perpendicular to plane) type GMR (giant magnetoresistance) element in which the sensing current for detecting magnetic signals flows in a direction substantially perpendicular to the planes of the layers constituting MR element 20. In a TMR element, the gap layer 23 is a tunnel barrier layer. In a GMR element, the gap layer 23 is a non-magnetic conductive layer.

[0066] The resistance value of the MR element 20 varies according to the angle between the magnetization direction of the free layer 24 and the magnetization direction of the magnetized fixed layer 22. The resistance value is at its minimum when the angle is 0° and at its maximum when the angle is 180°.

[0067] In this embodiment, the magnetization direction of the magnetization fixing layer 22 is parallel to the X-direction. Furthermore, in this embodiment, the magnetization direction of the magnetization fixing layer 22 of the plurality of MR elements 20 in resistor R1 is opposite to that of the magnetization fixing layer 22 of the plurality of MR elements 20 in resistor R2. The magnetization direction of the magnetization fixing layer 22 of the plurality of MR elements 20 in resistor R3 is the same as that of the magnetization fixing layer 22 of the plurality of MR elements 20 in resistor R2. The magnetization direction of the magnetization fixing layer 22 of the plurality of MR elements 20 in resistor R4 is the same as that of the magnetization fixing layer 22 of the plurality of MR elements 20 in resistor R1.

[0068] In this embodiment, specifically, the magnetization direction of the magnetization fixing layer 22 of the plurality of MR elements 20 of each of the resistor sections R1 and R4 is the X direction. The magnetization direction of the magnetization fixing layer 22 of the plurality of MR elements 20 of each of the resistor sections R2 and R3 is the -X direction.

[0069] In this embodiment, each of the plurality of MR elements 20 has a shape that is longer in a direction parallel to the Y direction. Therefore, the free layer 24 of each of the plurality of MR elements 20 has a shape anisotropy where the easy magnetization axis is parallel to the Y direction. Thus, in the absence of an applied magnetic field, the magnetization direction of the free layer 24 is parallel to the Y direction. When an output magnetic field component parallel to the X direction is present, the magnetization direction of the free layer 24 changes accordingly based on the direction and intensity of the output magnetic field component. Therefore, the angle between the magnetization direction of the free layer 24 and the magnetization direction of the magnetization fixed layer 22 varies depending on the direction and intensity of the output magnetic field component received by each of the plurality of MR elements 20. Therefore, the resistance value of each of the plurality of MR elements 20 becomes a value corresponding to the output magnetic field component. The easy magnetization axis direction is independent of the shape anisotropy and can be set to be parallel to the Y direction by providing a magnet that applies a bias magnetic field to the free layer 24 of the MR element 20.

[0070] In this embodiment, the direction of the output magnetic field component received by the plurality of MR elements 20 in resistor R2 is the same as the direction of the output magnetic field component received by the plurality of MR elements 20 in resistor R1. On the other hand, the direction of the output magnetic field component received by the plurality of MR elements 20 in resistor R3 and the plurality of MR elements 20 in resistor R4 is opposite to the direction of the output magnetic field component received by the plurality of MR elements 20 in resistor R1.

[0071] The magnetization fixing layer 22 can also be a so-called self-pinned fixing layer (SFP layer). A self-pinned fixing layer has a stacked ferromagnetic structure obtained by stacking a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer, and is obtained by antiferromagnetically bonding two ferromagnetic layers. When the magnetization fixing layer 22 is a self-pinned fixing layer, the antiferromagnetic layer 21 can be omitted.

[0072] Next, refer to Figure 1 The at least one detection signal generated by the magnetic sensor 1 is described in detail. In the state where there is neither an input magnetic field component nor an output magnetic field component, the magnetization direction of the free layer 24 of the MR element 20 becomes parallel to the Y direction. When the direction of the input magnetic field component is the Z direction, the direction of the output magnetic field component received by the MR element 20 in resistors R1 and R2 becomes the X direction, and the direction of the output magnetic field component received by the MR element 20 in resistors R3 and R4 becomes the -X direction. In this case, the magnetization direction of the free layer 24 of the MR element 20 in resistors R1 and R2 tilts from the direction parallel to the Y direction to the X direction, and the magnetization direction of the free layer 24 of the MR element 20 in resistors R3 and R4 tilts from the direction parallel to the Y direction to the -X direction. As a result, compared to the state where there is no output magnetic field component, the resistance value of the MR element 20 in resistors R1 and R3 decreases, and the resistance values ​​of resistors R1 and R3 also decrease. Furthermore, compared to the state where there is no output magnetic field component, the resistance value of the MR element 20 in the resistor section R2 and R4 increases, and the resistance value of the resistor section R2 and R4 also increases.

[0073] When the direction of the input magnetic field component is in the -Z direction, the direction of the output magnetic field component and the change in the resistance value of the resistors R1 to R4 are opposite to those when the direction of the input magnetic field component is in the Z direction.

[0074] The change in resistance of MR element 20 depends on the strength of the output magnetic field component received by MR element 20. When the strength of the output magnetic field component increases, the resistance of MR element 20 changes in the direction that the increase or decrease in the output magnetic field component increases. When the strength of the output magnetic field component decreases, the resistance of MR element 20 changes in the direction that the increase or decrease in the output magnetic field component decreases. The strength of the output magnetic field component depends on the strength of the input magnetic field component.

[0075] Thus, when the direction and intensity of the input magnetic field component change, the resistance values ​​of resistors R1 to R4 change in the following manner: the resistance values ​​of resistors R1 and R3 increase while the resistance values ​​of resistors R2 and R4 decrease, or the resistance values ​​of resistors R1 and R3 decrease while the resistance values ​​of resistors R2 and R4 increase. Therefore, Figure 1 The potentials of signal terminals E1 and E2 change respectively. Magnetic sensor 1 generates two signals corresponding to the potentials of signal terminals E1 and E2, or a signal corresponding to the potential difference between signal terminals E1 and E2, as at least one detection signal. The at least one detection signal changes accordingly based on the angle formed by the magnetization direction of the free layer 24 relative to the magnetization direction of the magnetized fixed layer 22.

[0076] Next, refer to Figures 6-9 The multiple first electrodes 81 and multiple second electrodes 82 in each array are described. Figure 6 This is a 3D diagram representing arrays 61A and 61B. Figure 7 This is a three-dimensional diagram representing multiple arrays 61A and multiple arrays 61B. Figure 8 This is a top view showing the first and third subarrays. Figure 9 This is a top view showing the second and fourth sub-arrays. Among them, in Figures 6-9 For ease of explanation, the shape of the MR element 20 is depicted in a simplified manner. The same principle applies to the following description. Figures 7-9 In the same figure, the shape of MR element 20 is also depicted in a simplified manner.

[0077] The following explanation uses signal paths P1 and P4 as examples. In the following explanation, signal path P1 will also be referred to as path 1 P1, and signal path P4 will also be referred to as path 2 P4. In addition, multiple arrays 61A will also be referred to as multiple first arrays 61A, and multiple arrays 61B will also be referred to as multiple second arrays 61B.

[0078] Multiple first electrodes 81 and multiple second electrodes 82 are disposed at different positions in a direction parallel to the Z direction. In each of the first path P1 and the second path P4, multiple structures, i.e., multiple MR elements 20, are disposed on the multiple first electrodes 81. Multiple second electrodes 82 are disposed on the multiple MR elements 20.

[0079] In each of the plurality of first arrays 61A and the plurality of second arrays 61B, the connection relationship between the five MR elements 20 and the plurality of first electrodes 81 and the plurality of second electrodes 82 is as follows. Each of the plurality of first electrodes 81 has an elongated shape in a direction parallel to the Y direction. A gap is formed between two adjacent first electrodes 81 in the direction parallel to the Y direction. MR elements 20 are disposed near one or both ends of the upper surface of the first electrode 81 in a direction parallel to the Y direction. Each of the plurality of second electrodes 82 is electrically connected to two adjacent MR elements 20 disposed on two adjacent first electrodes 81 in the direction parallel to the Y direction. Thus, the plurality of MR elements 20 are connected in series. Regarding the plurality of first electrodes 81 and the plurality of second electrodes 82, in each of the plurality of first arrays 61A and the plurality of second arrays 61B, the first electrodes 81 and the second electrodes 82 are alternately arranged one by one in the direction of current flow.

[0080] The MR element 20 has a first surface and a second surface located at both ends in a direction parallel to the Z direction. The first surface of the MR element 20 is connected to one of a plurality of first electrodes 81. The second surface of the MR element 20 is connected to one of a plurality of second electrodes 82.

[0081] Figure 7 This refers to four first arrays 61A and four second arrays 61B out of a plurality of first arrays 61A and a plurality of second arrays 61B. Figure 7 For ease of explanation, the four first arrays 61A are sequentially designated as 61A1, 61A2, 61A3, and 61A4 along the X-direction. Similarly, in... Figure 7 For ease of explanation, the four second arrays 61B are respectively labeled 61B1, 61B2, 61B3, and 61B4 along the X direction.

[0082] In the first array 61A1, the MR element 20 located at the Y-direction end is connected to a second electrode 82 introduced from the outside of the first array 61A1. In each of the first arrays 61A1 and 61A2, the two MR elements 20 located at the -Y-direction end are connected to each other via the first electrode 81. In each of the first arrays 61A2 and 61A3, the two MR elements 20 located at the Y-direction end are connected to each other via the second electrode 82. In each of the first arrays 61A3 and 61A4, the two MR elements 20 located at the -Y-direction end are connected to each other via the first electrode 81. In the first array 61A4, the MR element 20 located at the Y-direction end is connected to a second electrode 82 extending to the outside of the first array 61A4. In each of the first arrays 61A1 to 61A4, there are three first electrodes 81 and three second electrodes 82 connected to the five MR elements 20.

[0083] In the second array 61B1, the MR element 20 located at the Y-direction end is connected to a first electrode 81 introduced from the outside of the second array 61B1. In each of the second arrays 61B1 and 61B2, the two MR elements 20 located at the -Y-direction end are connected to each other via a second electrode 82. In each of the second arrays 61B2 and 61B3, the two MR elements 20 located at the Y-direction end are connected to each other via a first electrode 81. In each of the second arrays 61B3 and 61B4, the two MR elements 20 located at the -Y-direction end are connected to each other via a second electrode 82. In the second array 61B4, the MR element 20 located at the Y-direction end is connected to a first electrode 81 extending to the outside of the second array 61B4. In each of the second arrays 61B1 to 61B4, there are three first electrodes 81 connected to the five MR elements 20 and three second electrodes 82 connected to each of them.

[0084] In the first path P1, there are two sub-arrays: a first sub-array 62A and a second sub-array 63A. The first sub-array 62A is positioned in the first path P1 between one end P1a and one of the first arrays 61A. The second sub-array 63A is positioned in the first path P1 between the other end P1b and one of the first arrays 61A. One end P1a of the first path P1 can, for example, be the end on the power supply terminal V1 side of the first path P1. The other end P1b of the first path P1 can, for example, be the end on the signal terminal E1 side of the first path P1.

[0085] In the second path P4, there are two sub-arrays: a third sub-array 62B and a fourth sub-array 63B. The third sub-array 62B is positioned in the second path P4 between one end P4a and a plurality of second arrays 61B. The fourth sub-array 63B is positioned in the second path P4 between the other end P4b and a plurality of second arrays 61B. One end P4a of the second path P4 can, for example, be the end on the power supply terminal V1 side of the second path P4. The other end P4b of the second path P4 can, for example, be the end on the signal terminal E2 side of the second path P4.

[0086] exist Figure 8 For ease of explanation, the five MR elements 20 in the first subarray 62A are sequentially designated as 20a1, 20a2, 20a3, 20a4, and 20a5 along the Y direction. Similarly, in... Figure 8For ease of explanation, the five MR elements 20 in the third subarray 62B are designated as 20c1, 20c2, 20c3, 20c4, and 20c5 along the Y direction. MR element 20a1 is the structure included in the first subarray 62A, located at the end P1a closest to the first path P1. MR element 20c1 is the structure included in the third subarray 62B, located at the end P4a closest to the second path P4.

[0087] The first subarray 62A and one end P1a of the first path P1, and the third subarray 62B and one end P4a of the second path P4 are each connected by the second electrode 82. More specifically, the MR element 20a1 and one end P1a of the first path P1 are connected by the second electrode 82. Furthermore, the MR element 20c1 and one end P4a of the second path P4 are connected by the second electrode 82.

[0088] exist Figure 8 In the example shown, MR element 20a5 is connected to a second electrode 82 introduced from the outside of the first subarray 62A. MR elements 20a4 and 20a5 are connected to a first electrode 81. MR elements 20a3 and 20a4 are connected to a second electrode 82. MR elements 20a1, 20a2, and 20a3 are connected to a first electrode 81.

[0089] The second surface of MR element 20a2 is not electrically connected to the second surface of other MR elements 20. Therefore, no current flows in the direction perpendicular to the surfaces constituting each layer of MR element 20a2. Electrodes 83 that are not electrically connected to other MR elements 20 may also be connected to the second surface of MR element 20a2. Multiple second electrodes 82 and 83 are arranged at the same position in a direction parallel to the Z direction.

[0090] In addition, Figure 8 In the example shown, MR element 20c5 is connected to a first electrode 81 introduced from the outside of the third subarray 62B. MR elements 20c4 and 20c5 are connected to a second electrode 82. MR elements 20c3 and 20c4 are connected to the first electrode 81. MR elements 20c2 and 20c3 are connected to the second electrode 82. MR elements 20c1 and 20c2 are connected to the first electrode 81.

[0091] One end P1a of the first path P1 and one end P4a of the second path P4 can also be connected to the electrode plate 91. The electrode plate 91 can be, for example, the electrode plate that constitutes the power supply terminal V1.

[0092] exist Figure 9For ease of explanation, the five MR elements 20 in the second subarray 63A are sequentially designated as 20b1, 20b2, 20b3, 20b4, and 20b5 along the Y direction. Similarly, in... Figure 9 For ease of explanation, the five MR elements 20 in the fourth subarray 63B are designated as 20d1, 20d2, 20d3, 20d4, and 20d5 along the Y direction. MR element 20b1 is the structure included in the second subarray 63A that is closest to the other end P1b of the first path P1. MR element 20d1 is the structure included in the fourth subarray 63B that is closest to the other end P4b of the second path P4.

[0093] The second subarray 63A and the other end P1b of the first path P1, and the fourth subarray 63B and the other end P4b of the second path P4 are each connected by the second electrode 82. More specifically, the MR element 20b1 and the other end P1b of the first path P1 are connected by the second electrode 82. Furthermore, the MR element 20d1 and the other end P4b of the second path P4 are connected by the second electrode 82.

[0094] exist Figure 9 In the example shown, MR element 20b5 is connected to a second electrode 82 introduced from the outside of the second subarray 63A. MR elements 20b4 and 20b5 are connected to a first electrode 81. MR elements 20b3 and 20b4 are connected to a second electrode 82. MR elements 20b1, 20b2, and 20b3 are connected to a first electrode 81.

[0095] The second surface of MR element 20b2 is not electrically connected to the second surface of other MR elements 20. Therefore, the current flowing through the first path P1 does not pass through the layers constituting MR element 20b2. Therefore, MR element 20b2 does not function. Electrodes 84 that are not electrically connected to other MR elements 20 may also be connected to the second surface of MR element 20b2. Multiple second electrodes 82 and electrodes 84 are arranged at the same position in a direction parallel to the Z direction.

[0096] In addition, Figure 9 In the example shown, MR element 20d5 is connected to a first electrode 81 introduced from the outside of the fourth subarray 63B. MR elements 20d4 and 20d5 are connected by a second electrode 82. MR elements 20d1, 20d2, 20d3, and 20d4 are connected by the first electrode 81.

[0097] The second surfaces of MR elements 20d2 and 20d3 are not electrically connected to the second surfaces of other MR elements 20. Therefore, the current flowing through the second path P4 does not pass through the layers constituting MR element 20d2 and MR element 20d3. Therefore, MR elements 20d2 and 20d3 do not function. Electrodes 85, which are not electrically connected to other MR elements 20, can also be connected to the second surfaces of MR elements 20d2 and 20d3. Multiple second electrodes 82 and two electrodes 85 are arranged at the same position in a direction parallel to the Z direction.

[0098] The other end P1b of the first path P1 can also be connected to electrode plate 92. The other end P4b of the second path P4 can also be connected to electrode plate 93. Electrode plate 92 can be, for example, the electrode plate constituting signal terminal E1. Electrode plate 93 can be, for example, the electrode plate constituting signal terminal E2. Electrode plates 91 to 93 can also be arranged in the same position in a direction parallel to the Z direction. Although not shown, the electrode plate constituting ground terminal G1 can also be arranged in the same position as electrode plates 91 to 93 in a direction parallel to the Z direction.

[0099] Up to this point, the explanation has taken signal paths P1 and P4 as examples. The explanation of signal paths P1 and P4 also applies to signal paths P2 and P3. If we replace signal paths P1 and P4 and power terminal V1 in the above explanation with signal paths P2 and P3 and ground terminal G1 respectively, then it becomes an explanation of signal paths P2 and P3.

[0100] Next, the function and effect of the magnetic sensor 1 in this embodiment will be explained. In this embodiment, as previously described, the two MR elements 20 at the -Y direction ends of each of the first arrays 61A1 and 61A2 are connected to each other via the first electrode 81, and the two MR elements 20 at the -Y direction ends of each of the second arrays 61B1 and 61B2 are connected to each other via the second electrode 82. Furthermore, the two MR elements 20 at the Y direction ends of each of the first arrays 61A2 and 61A3 are connected to each other via the second electrode 82, and the two MR elements 20 at the Y direction ends of each of the second arrays 61B2 and 61B3 are connected to each other via the first electrode 81.

[0101] Focusing on array 61A2 and array 61B2, such as Figure 7 As shown, the electrode extended from the first array 61A2 along the -Y direction for connection with the first array 61A1 is the first electrode 81, and the electrode extended from the second array 61B2 along the -Y direction for connection with the second array 61B1 is the second electrode 82. Furthermore, as... Figure 7As shown, the electrode extending from the first array 61A2 along the Y direction for connection with the first array 61A3 is the second electrode 82, and the electrode extending from the second array 61B2 along the Y direction for connection with the second array 61B3 is the first electrode 81. Thus, in this embodiment, the electrodes extending from the first array 61A and the second array 61B along the same direction are different from each other. Therefore, according to this embodiment, the electrodes extending from the first array 61A and the second array 61B along the same direction can be made to cross. As a result, according to this embodiment, the first array 61A and the second array 61B can be connected every other column. Furthermore, in this embodiment, in order to connect the first array 61A and the second array 61B every other column, it is not necessary to provide a connecting structure configured to connect the first electrode 81 and the second electrode 82, specifically a connecting electrode or a through hole.

[0102] Furthermore, in this embodiment, as previously described, each of the first array 61A and the second array 61B contains an odd number of constructs, namely five MR elements 20. Here, consider... Figure 7 The first array 61A2 and the second array 61B2 shown each contain an even number of structures, i.e., four MR elements 20. In this case, as described above, when the electrodes drawn from the first array 61A2 and the second array 61B2 along the same direction are to be different from each other, the number of the plurality of first electrodes 81 and the number of the plurality of second electrodes 82 are different between the first array 61A2 and the second array 61B2.

[0103] For example, in Figure 7 In the case where the first array 61A2 shown includes four MR elements 20 counting from the end in the -Y direction, the number of first electrodes 81 and second electrodes 82 disposed in the first array 61A2 are three and two, respectively. On the other hand, in Figure 7 In the case where the second array 61B2 shown contains four MR elements 20 starting from the end in the -Y direction, the number of first electrodes 81 and second electrodes 82 disposed in the second array 61B2 are two and three, respectively.

[0104] Compared to the first array 61B2, the first array 61A2 is affected more significantly by deviations in the shape of the plurality of first electrodes 81. On the other hand, compared to the first array 61A2, the second array 61B2 is affected more significantly by deviations in the shape of the plurality of second electrodes 82.

[0105] In contrast, in this embodiment, the number of first electrodes 81 and second electrodes 82 provided in the first array 61A is three. Furthermore, the number of first electrodes 81 and second electrodes 82 provided in the second array 61B is also three. Thus, according to this embodiment, by making the number of structures, i.e., MR elements 20, included in each of the first array 61A and the second array 61B an odd number (5), it is possible to make the number of plurality of first electrodes 81 and plurality of plurality of second electrodes 82 provided in each of the first array 61A and the second array 61B the same. As a result, according to this embodiment, deviations in characteristics between the first array 61A and the second array 61B can be suppressed.

[0106] Furthermore, in this embodiment, the plurality of first arrays 61A of signal path P1 constitute the main part of resistor R1. The plurality of first arrays 61A of signal path P2 constitute the main part of resistor R2. The plurality of second arrays 61B of signal path P3 constitute the main part of resistor R3. The plurality of second arrays 61B of signal path P4 constitute the main part of resistor R4. In this embodiment, the number of first electrodes 81 provided in the plurality of first arrays 61A, the number of second electrodes 82 provided in the plurality of first arrays 61A, the number of first electrodes 81 provided in the plurality of second arrays 61B, and the number of second electrodes 82 provided in the plurality of second arrays 61B are the same. Therefore, according to this embodiment, the deviation of characteristics between resistors R1 to R4 can be suppressed.

[0107] Furthermore, in this embodiment, as described above, the first array 61A and the second array 61B are connected every other column, and the number of each plurality of first electrodes 81 and the number of each plurality of second electrodes 82 provided in the first array 61A and the second array 61B are the same. Thus, in this embodiment, the plurality of first electrodes 81 and the plurality of second electrodes 82 are arranged in a manner in which the first electrodes 81 and the second electrodes 82 are arranged alternately in a direction parallel to the X direction.

[0108] Furthermore, in this embodiment, subarrays 62A, 62B, 63A, and 63B are provided. Therefore, according to this embodiment, each electrode leading from the resistors R1 to R4 can be designated as a second electrode 82. The subarrays 62A, 62B, 63A, and 63B are not essential components of the magnetic sensor 1 and may be omitted. Alternatively, a connection structure for connecting the first electrode 81 and the second electrode 82 may be provided instead of the subarrays 62A, 62B, 63A, and 63B. The connection structure may be a connection electrode made of a non-magnetic metal such as Ta between the first electrode 81 and the second electrode 82, or a through-hole for contacting the second electrode 82 with the first electrode 81.

[0109] [Second Implementation]

[0110] Next, refer to Figure 10 The second embodiment of the present invention will now be described. Figure 10 This is a top view showing multiple first arrays 61A and multiple second arrays 61B.

[0111] In this embodiment, at least one of the odd-numbered structures of each of the plurality of first arrays 61A and the plurality of second arrays 61B is a connecting structure that connects one of the plurality of first electrodes 81 and one of the plurality of second electrodes 82, specifically a connecting electrode formed of a non-magnetic metal such as Ta. In particular, in each of the plurality of first arrays 61A and the plurality of second arrays 61B, five structures are included, comprising four MR elements 20 and one connecting electrode 86. Figure 10 In order to make it easier to understand, the connecting electrode 86 is shaded.

[0112] Among them, Figure 10 In the example shown, in each of the plurality of first arrays 61A and the plurality of second arrays 61B, the central structure among the five structures located in a direction parallel to the Y direction is the connecting electrode 86. However, the position and number of connecting electrodes 86 are not limited to... Figure 10 The example shown. For example, the number of connecting electrodes 86 can also be multiple. In addition, as a connecting structure, connecting electrodes 86 can be replaced, or a through hole for contacting the second electrode 82 with the first electrode 81 can be provided outside the connecting electrodes.

[0113] The other structures, functions, and effects in this embodiment are the same as in the first embodiment.

[0114] [Third Implementation]

[0115] Next, refer to Figure 11 The third embodiment of the present invention will now be described. Figure 11 This is a top view showing multiple first arrays 61A and multiple second arrays 61B.

[0116] As described in the first embodiment, the array 61A located at the end in the X direction among the plurality of arrays 61A is referred to as a specific array 61A, and the array 61B located at the end in the X direction among the plurality of arrays 61B is referred to as a specific array 61B. Specific arrays 61A and 61B are also connected to a single magnetic yoke 51 (see reference 51). Figures 2-4 The two corresponding arrays 61A and 61B are shown. In this embodiment, when viewed from the Z direction, the direction of current flow in a specific array 61A is opposite to the direction of current flow in a specific array 61B.

[0117] Furthermore, compared with the first embodiment... Figure 7 Similarly, in Figure 11 For ease of explanation, the four first arrays 61A are sequentially designated as 61A1, 61A2, 61A3, and 61A4 along the X-direction. Similarly, in... Figure 11 For ease of explanation, the four second arrays 61B are respectively labeled 61B1, 61B2, 61B3, and 61B4 along the X direction.

[0118] In the first array 61A1, the MR element 20 located at the -Y direction end is connected to a first electrode 81 introduced from the outside of the first array 61A1. In each of the first arrays 61A1 and 61A2, the two MR elements 20 located at the Y direction end are connected to each other via a second electrode 82. In each of the first arrays 61A2 and 61A3, the two MR elements 20 located at the -Y direction end are connected to each other via a first electrode 81. In each of the first arrays 61A3 and 61A4, the two MR elements 20 located at the Y direction end are connected to each other via a second electrode 82. In the first array 61A4, the MR element 20 located at the -Y direction end is connected to a first electrode 81 extending to the outside of the first array 61A4.

[0119] In the second array 61B1, the MR element 20 located at the Y-direction end is connected to a first electrode 81 introduced from the outside of the second array 61B1. In each of the second arrays 61B1 and 61B2, the two MR elements 20 located at the -Y-direction end are connected to each other via a second electrode 82. In each of the second arrays 61B2 and 61B3, the two MR elements 20 located at the Y-direction end are connected to each other via a first electrode 81. In each of the second arrays 61B3 and 61B4, the two MR elements 20 located at the -Y-direction end are connected to each other via a second electrode 82. In the second array 61B4, the MR element 20 located at the Y-direction end is connected to a first electrode 81 extending to the outside of the second array 61B4.

[0120] In this embodiment, the magnetic field generated by the current flowing through the first array 61A1 and the magnetic field generated by the current flowing through the second array 61B1 cancel each other out in one yoke 51 corresponding to the first array 61A1 and the second array 61B1. Therefore, according to this embodiment, the influence of the above-mentioned magnetic field on the output magnetic field component generated by one yoke 51 can be suppressed.

[0121] The description of the group of first array 61A1 and second array 61B1 described above also applies to the group of first array 61A2 and second array 61B2, the group of first array 61A3 and second array 61B3, and the group of first array 61A4 and second array 61B4.

[0122] Furthermore, in this embodiment, the electrodes introduced from the outside to the first array 61A1, the electrodes led out from the first array 61A4, the electrodes introduced from the outside to the second array 61B1, and the electrodes led out from the second array 61B4 are all first electrodes 81. Thus, according to this embodiment, without providing the first to fourth sub-arrays 62A, 62B, 63A, and 63B of the first embodiment, it is possible to make the electrodes led out from each of the resistor sections R1 to R4 consistent with the first electrode 81. Specifically, the electrodes introduced from the outside to the first array 61A1, the electrodes led out from the first array 61A4, the electrodes introduced from the outside to the second array 61B1, and the electrodes led out from the second array 61B4 can all be second electrodes 82.

[0123] The other structures, functions, and effects in this embodiment are the same as in the first embodiment.

[0124] [Fourth Implementation]

[0125] Next, the fourth embodiment of the present invention will be described. In the fourth embodiment, the magnetic sensor 1 is configured to detect the target magnetic field by using the portion of the magnetic field whose direction varies within the YZ plane.

[0126] The following is for reference Figure 12 and Figure 13 The general structure of the magnetic sensor 1 in this embodiment will be described. Figure 12 This is a circuit diagram showing the circuit structure of the first detection circuit of magnetic sensor 1. Figure 13 This is a circuit diagram showing the circuit structure of the second detection circuit of magnetic sensor 1.

[0127] The magnetic sensor 1 of this embodiment includes: a first power supply terminal; a second power supply terminal; one or two first signal terminals; one or two second signal terminals; one or two first signal paths connecting the first power supply terminal to the one or two first signal terminals; one or two second signal paths connecting the one or two first signal terminals to ground; one or two third signal paths connecting the second power supply terminal to the one or two second signal terminals; and one or two fourth signal paths connecting the one or two second signal terminals to ground. The magnetic sensor 1 further includes a first ground terminal and a second ground terminal.

[0128] In this embodiment, specifically, the magnetic sensor 1 includes a first detection circuit 11 and a second detection circuit 12. For example... Figure 12 As shown, the first detection circuit 11 includes, as a first power supply terminal, a first ground terminal, a first signal terminal, a first signal path, and a second signal path: a power supply terminal V11, a ground terminal G11, two signal terminals E11 and E12, a signal path P11 connecting the power supply terminal V11 and the signal terminal E11, a signal path P14 connecting the power supply terminal V11 and the signal terminal E12, a signal path P12 connecting the signal terminal E11 and the ground terminal G11, and a signal path P13 connecting the signal terminal E12 and the ground terminal G11. A predetermined power supply voltage can be applied to the power supply terminal V11. The ground terminal G11 is connected to ground. Current flows through the signal paths P11 to P14 respectively.

[0129] The first detection circuit 11 further includes: a resistor R11 disposed on signal path P11; a resistor R12 disposed on signal path P12; a resistor R13 disposed on signal path P13; and a resistor R14 disposed on signal path P14. Each of the resistors R11 to R14 includes a plurality of MR elements 20.

[0130] The first detection circuit 11 generates two signals corresponding to the potentials of signal terminals E11 and E12, or a signal corresponding to the potential difference between signal terminals E11 and E12, as at least one first detection signal.

[0131] like Figure 13 As shown, the second detection circuit 12 includes, as a second power supply terminal, a second ground terminal, a second signal terminal, a third signal path, and a fourth signal path: a power supply terminal V12, a ground terminal G12, two signal terminals E21 and E22, a signal path P21 connecting the power supply terminal V12 and the signal terminal E21, a signal path P24 connecting the power supply terminal V12 and the signal terminal E22, a signal path P22 connecting the signal terminal E21 and the ground terminal G12, and a signal path P23 connecting the signal terminal E22 and the ground terminal G12. A predetermined power supply voltage can be applied to the power supply terminal V12. The ground terminal G12 is connected to ground. Current flows through the signal paths P21 to P24 respectively.

[0132] The second detection circuit 12 further includes: a resistor R21 disposed on signal path P21, a resistor R22 disposed on signal path P22, a resistor R23 disposed on signal path P23, and a resistor R24 ​​disposed on signal path P24. Each of the resistors R21 to R24 includes a plurality of MR elements 20.

[0133] The second detection circuit 12 generates two signals corresponding to the potentials of signal terminals E21 and E22, or a signal corresponding to the potential difference between signal terminals E21 and E22, as at least one second detection signal.

[0134] Next, refer to Figure 14 and Figure 15 The structure of the magnetic sensor 1 in this embodiment will be described in detail. Figure 14 This is a top view showing a portion of magnetic sensor 1. Figure 15 This is a side view showing a portion of magnetic sensor 1.

[0135] The first detection circuit 11 further includes: a plurality of structures disposed in signal paths P11 to P14; and a plurality of first electrodes 81 and a plurality of second electrodes 82 connecting the plurality of structures in series. Each of the signal paths P11 to P14 includes a plurality of arrays. Each of the plurality of arrays includes five structures. Each of the five structures includes an MR element 20.

[0136] Each of the signal paths P11 to P14 further includes multiple sub-arrays. Each of the multiple sub-arrays includes a number of multiple structures or a single structure that is less than the odd number (i.e., 5 structures) included in each of the multiple arrays. In particular, each of the multiple structures included in the multiple sub-arrays and the single structure includes a structure containing an MR element 20.

[0137] Signal path P11 contains multiple arrays and multiple sub-arrays that constitute resistor section R11. Signal path P12 contains multiple arrays and multiple sub-arrays that constitute resistor section R12. Signal path P13 contains multiple arrays and multiple sub-arrays that constitute resistor section R13. Signal path P14 contains multiple arrays and multiple sub-arrays that constitute resistor section R14.

[0138] The number of MR elements 20 contained in each of the signal paths P11 to P14 is the same. Furthermore, the number of MR elements 20 contained in each of the signal paths P11 to P14 can also be an even number.

[0139] The second detection circuit 12 further includes: a plurality of structures disposed in signal paths P21 to P24; and a plurality of first electrodes 81 and a plurality of second electrodes 82 connecting the plurality of structures in series. Each of the signal paths P21 to P24 includes a plurality of arrays. Each of the plurality of arrays includes five structures. Each of the five structures is an MR element 20.

[0140] Each of the signal paths P21 to P24 further includes multiple sub-arrays. Each of the multiple sub-arrays includes a number of multiple structures or a single structure that is less than the odd number (i.e., 5 structures) included in each of the multiple arrays. In this embodiment, in particular, each of the multiple structures and the single structure included in each of the multiple sub-arrays is an MR element 20.

[0141] Signal path P21 contains multiple arrays and multiple sub-arrays that constitute resistor section R21. Signal path P22 contains multiple arrays and multiple sub-arrays that constitute resistor section R22. Signal path P23 contains multiple arrays and multiple sub-arrays that constitute resistor section R23. Signal path P24 contains multiple arrays and multiple sub-arrays that constitute resistor section R24.

[0142] The number of MR elements 20 contained in each of the signal paths P21 to P24 is the same. Furthermore, the number of MR elements 20 contained in each of the signal paths P21 to P24 can also be an even number.

[0143] Figure 14 This refers to multiple first arrays 161A and multiple second arrays 161B in a plurality of arrays. The plurality of first arrays 161A and multiple second arrays 161B are arranged in a manner in which the first arrays 161A and the second arrays 161B are arranged alternately in a direction parallel to the X direction.

[0144] The first array 161A and the second array 161B are contained in different signal paths. In this embodiment, the magnetic sensor 1 includes: a first region for configuring resistive portions R11 and R21; a second region for configuring resistive portions R12 and R22; a third region for configuring resistive portions R13 and R23; and a fourth region for configuring resistive portions R14 and R24. In the first region, the arrays contained in signal path P11 and signal path P21 correspond to the first array 161A and the second array 161B, respectively. In the second region, the arrays contained in signal path P12 and signal path P22 correspond to the first array 161A and the second array 161B, respectively. In the third region, the arrays contained in signal path P13 and signal path P23 correspond to the first array 161A and the second array 161B, respectively. In region 4, the arrays contained in signal path P14 and signal path P24 correspond to array 161A and array 161B, respectively. Figure 14 and Figure 15 This shows a portion of any region from regions 1 to 4.

[0145] Here, in any region of regions 1 to 4, the first array 161A located at the end in the X direction among the plurality of first arrays 161A is referred to as a specific first array 161A, and the second array 161B located at the end in the X direction among the plurality of second arrays 161B is referred to as a specific second array 161B. When viewed from the Z direction, the direction of current flow in the specific first array 161A is the same as the direction of current flow in the specific second array 161B.

[0146] The connection relationships between the five MR elements 20 in each of the plurality of first arrays 161A and the plurality of second arrays 161B and the plurality of first electrodes 81 and the plurality of second electrodes 82 are the same as in the first embodiment. Figure 6 and Figure 7 The connection relationships between the five MR elements 20 in each of the plurality of first arrays 61A and the plurality of second arrays 61B shown are the same as those between the plurality of first electrodes 81 and the plurality of second electrodes 82.

[0147] exist Figure 14 In this context, the symbol 80 represents a wiring section consisting of multiple first electrodes 81 and multiple second electrodes 82. For example... Figure 15 As shown, the magnetic sensor 1 also includes a support 30 that supports a plurality of MR elements 20. The support 30 includes a sensor substrate and an insulating portion formed of an insulating material.

[0148] The support body 30 has a plurality of grooves 30c. Each of the plurality of grooves 30c has an inclined surface 30a and an inclined surface 30b. A plurality of first arrays 161A are disposed on the inclined surfaces 30a of the plurality of grooves 30c. A plurality of second arrays 161B are disposed on the inclined surfaces 30b of the plurality of grooves 30c.

[0149] Here, as Figure 15 As shown, the U direction and V direction are defined as follows: The U direction is the direction rotated from the X direction towards the -Z direction. The V direction is the direction rotated from the X direction towards the Z direction. In this embodiment, specifically, the U direction is defined as the direction rotated by α from the X direction towards the -Z direction, and the V direction is defined as the direction rotated by α from the X direction towards the Z direction. Here, α is an angle greater than 0° and less than 90°. Furthermore, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0150] Inclined surface 30a is parallel to the YU plane, and inclined surface 30b is parallel to the YV plane. Therefore, it can be said that multiple first arrays 161A are arranged on inclined surfaces parallel to the YU plane, and multiple second arrays 161B are arranged on inclined surfaces parallel to the YV plane.

[0151] Although not illustrated, the magnetic sensor 1 also includes an insulating portion. This insulating portion, made of insulating material, covers multiple MR elements 20 and a wiring portion 80. Specifically, in... Figure 15 In the text, multiple first electrodes 81, multiple second electrodes 82, and insulating parts are omitted.

[0152] exist Figure 12 and Figure 13 In the diagram, the black arrows indicate the magnetization direction of the magnetization fixing layer 22 in the MR element 20.

[0153] exist Figure 12 In the example shown, the magnetization direction of the magnetization fixing layer 22 of the MR element 20 in each of the resistor sections R11 and R13 is the U direction. The magnetization direction of the magnetization fixing layer 22 of the MR element 20 in each of the resistor sections R12 and R14 is the -U direction. Furthermore, the free layer 24 of the MR element 20 has an anisotropic shape with its easy magnetization axis parallel to the Y direction.

[0154] In addition, Figure 13 In the example shown, the magnetization direction of the magnetization fixing layer 22 of the MR element 20 in each of the resistor sections R21 and R23 is the V direction. The magnetization direction of the magnetization fixing layer 22 of the MR element 20 in each of the resistor sections R22 and R24 is the -V direction. Furthermore, the free layer 24 of the MR element 20 has a shape anisotropy with the easy magnetization axis direction parallel to the Y direction.

[0155] The magnetic field (partial magnetic field) detected by the magnetic sensor 1 can be divided into a first component parallel to the U direction and a second component parallel to the direction orthogonal to the U direction. The first detection circuit 11 is configured to detect the first component of the partial magnetic field. That is, when the intensity of the first component of the partial magnetic field changes, the resistance values ​​of the resistors R11 to R14 change in such a way that the resistance values ​​of resistors R11 and R13 increase and the resistance values ​​of resistors R12 and R14 decrease, or the resistance values ​​of resistors R11 and R13 decrease and the resistance values ​​of resistors R12 and R14 increase. As a result, the potentials of the signal terminals E11 and E12 change. In this embodiment, the first detection circuit 11 generates a signal corresponding to the potential of the signal terminal E11 as the first detection signal S11, and generates a signal corresponding to the potential of the signal terminal E12 as the first detection signal S12.

[0156] Furthermore, the partial magnetic field can be divided into a third component parallel to the V direction and a fourth component parallel to the direction orthogonal to the V direction. The second detection circuit 12 is configured to detect the third component of the partial magnetic field. That is, when the intensity of the third component of the partial magnetic field changes, the resistance values ​​of the resistors R21 to R24 change in such a way that the resistance values ​​of resistors R21 and R23 increase and the resistance values ​​of resistors R22 and R24 decrease, or the resistance values ​​of resistors R21 and R23 decrease and the resistance values ​​of resistors R22 and R24 increase. As a result, the potentials of the signal terminals E21 and E22 change. In this embodiment, the second detection circuit 12 generates a signal corresponding to the potential of the signal terminal E21 as the second detection signal S21, and generates a signal corresponding to the potential of the signal terminal E22 as the second detection signal S22.

[0157] Furthermore, the magnetic field can be divided into a first magnetic field component parallel to the Z direction and a second magnetic field component parallel to the X direction. Hereinafter, an example of a method for generating a detection value Sz corresponding to the first magnetic field component and a detection value Sx corresponding to the second magnetic field component based on the first detection signals S11, S12 and the second detection signals S21, S22 will be described. The detection values ​​Sx and Sz are generated by a processor (not shown).

[0158] The processor (not shown) generates detection values ​​Sx and Sz as described below. First, the processor generates value S1 by performing an operation involving calculating the difference S11-S12 between the first detection signal S11 and the first detection signal S12, and generates value S2 by performing an operation involving calculating the difference S21-S22 between the second detection signal S21 and the second detection signal S22. Next, the processor calculates values ​​S3 and S4 using equations (1) and (2) below.

[0159] S3=(S2+S1) / (2cosα)……(1)

[0160] S4=(S2-S1) / (2sinα)……(2)

[0161] The detected value Sx can be either the value S3 itself, or the value obtained by applying specified corrections such as gain adjustment and bias adjustment to the value S3. Similarly, the detected value Sz can be either the value S4 itself, or the value obtained by applying specified corrections such as gain adjustment and bias adjustment to the value S4.

[0162] Next, refer to Figure 16 The multiple first electrodes 81 and multiple second electrodes 82 in the multiple sub-arrays are described. Figure 16 This is a top view showing multiple first subarrays and multiple third subarrays.

[0163] The following explanation uses signal paths P11 and P14 as examples. In the following explanation, signal path P11 will also be referred to as path 1 P11, and signal path P14 will also be referred to as path 2 P14.

[0164] In the first path P11, multiple sub-arrays are included, comprising multiple first sub-arrays 162A and multiple second sub-arrays. The multiple first sub-arrays 162A are disposed in the first path P11 between one end of the first path P11 and the multiple first arrays 161A of the first path P11. The multiple second sub-arrays are disposed in the first path P11 between the other end of the first path P11 and the multiple first arrays 161A of the first path P11. One end of the first path P11 may, for example, be the end on the power supply terminal V11 side of the first path P11. The other end of the first path P11 may, for example, be the end on the signal terminal E11 side of the first path P11.

[0165] The second path P14 comprises multiple third sub-arrays 162B and multiple fourth sub-arrays. The multiple third sub-arrays 162B are disposed in the second path P14 between one end of the second path P14 and the multiple second arrays 161B of the second path P14. The multiple fourth sub-arrays are disposed in the second path P14 between the other end of the second path P14 and the multiple second arrays 161B of the second path P14. One end of the second path P14 may be, for example, the end on the power supply terminal V11 side of the second path P14. The other end of the second path P14 may be, for example, the end on the signal terminal E12 side of the second path P14.

[0166] Figure 16 This refers to multiple first subarrays 162A and multiple third subarrays 162B. The multiple first subarrays 162A and multiple third subarrays 162B are arranged alternately in a direction parallel to the X-direction. Multiple first electrodes 81 and multiple second electrodes 82 are alternately arranged in each of the multiple first subarrays 162A and multiple third subarrays 162B in the direction of current flow, connecting multiple structures, i.e., multiple MR elements 20, in series.

[0167] In this embodiment, the plurality of first sub-arrays 162A consists of four first sub-arrays 162A, and the plurality of third sub-arrays 162B consists of four third sub-arrays 162B. Figure 16 For ease of explanation, the four first subarrays 162A are sequentially designated as 162A1, 162A2, 162A3, and 162A4 along the X-direction. Similarly, in... Figure 16For ease of explanation, the four third subarrays 162B are designated as 162B1, 162B2, 162B3, and 162B4 along the X-direction. Figure 16 This indicates the first array 161A connected to the first sub-array 162A4, and the second array 161B connected to the third sub-array 162B4.

[0168] The first subarray 162A1 is the array closest to the first path P11. The first subarray 162A1 contains one construct, i.e., one MR element 20. The first subarray 162A2 contains two constructs, i.e., two MR elements 20. The first subarray 162A3 contains three constructs, i.e., three MR elements 20. The first subarray 162A4 contains four constructs, i.e., four MR elements 20. Thus, in terms of the number of constructs contained in each of the multiple first subarrays 162A, the further away from the first path P11, the more constructs are contained in each of the multiple first subarrays 162A. In other words, in terms of the number of constructs contained in each of the multiple first subarrays 162A, the closer to the first path P11, the fewer constructs are contained in each of the multiple first subarrays 162A.

[0169] The third subarray 162B1 is the array closest to the end of the second path P14. The third subarray 162B1 contains one construct, i.e., one MR element 20. The third subarray 162B2 contains two constructs, i.e., two MR elements 20. The third subarray 162B3 contains three constructs, i.e., three MR elements 20. The third subarray 162B4 contains four constructs, i.e., four MR elements 20. Thus, in terms of the number of constructs contained in each of the multiple third subarrays 162B, the further away from the end of the second path P14, the more constructs are contained. In other words, in terms of the number of constructs contained in each of the multiple third subarrays 162B, the closer to the end of the second path P14, the fewer constructs are contained.

[0170] Additionally, one end of path P11 and one end of path P14 can also be connected to the same electrode plate. Figure 16In the example shown, the portion of the first path P11 located between the first subarray 162A1 and one end of the first path P11 is constituted by the second electrode 82. Furthermore, the portion of the second path P14 located between the third subarray 162B1 and one end of the second path P14 is constituted by the first electrode 81. Therefore, the aforementioned portions of the first path P11 and the second path P14 are positioned at different locations in a direction parallel to the Z direction. In this case, the aforementioned portions of the first path P11 and the second path P14 can also be connected to each other via a connecting structure 87, specifically a connecting electrode made of a non-magnetic metal such as Ta, or via a through-hole for contacting the second electrode 82 with the first electrode 81.

[0171] Although not illustrated, the structure of the multiple second sub-arrays and multiple fourth sub-arrays is similar to... Figure 16 The structures of the multiple first subarrays 162A and multiple third subarrays 162B shown are identical. Regarding the number of structures contained in each of the multiple second subarrays, the number of second subarrays decreases as they approach the other end of the first path P11. Regarding the number of structures contained in each of the multiple fourth subarrays, the number of fourth subarrays decreases as they approach the other end of the second path P14.

[0172] Additionally, the other ends of the first path P11 and the second path P14 can also be connected to different electrode plates. The portions of the first path P11 located between the multiple second sub-arrays 163A and the other ends of the first path P11, and the portions of the second path P14 located between the multiple fourth sub-arrays 163B and the other ends of the second path P14, can also be connected to each other without connection using structures.

[0173] Up to this point, the explanation has taken signal paths P11 and P14 as examples. The explanation of signal paths P11 and P14 also applies to signal paths P12 and P13. If we replace signal paths P11 and P14 and power supply terminal V11 in the above explanation with signal paths P12 and P13 and ground terminal G11 respectively, then it becomes an explanation of signal paths P12 and P13.

[0174] Furthermore, the explanation regarding signal paths P11 to P14 also applies to signal paths P21 to P24.

[0175] The other structures, functions, and effects in this embodiment are the same as in the first embodiment.

[0176] [Fifth Implementation]

[0177] Next, refer to Figure 17The fifth embodiment of the present invention will now be described. Figure 17 This is a perspective view showing key parts of the magnetic sensor system of this embodiment. The magnetic sensor system 100 of this embodiment includes a magnetic sensor 1 and a magnetic field generating unit that generates a predetermined magnetic field.

[0178] In this embodiment, the magnetic field generating unit is a magnet 2 configured to apply a portion of the magnetic field, which is part of the generated magnetic field, to the magnetic sensor 1. This portion of the magnetic field includes a first magnetic field component Hz parallel to the Z direction and a second magnetic field component Hx parallel to the X direction.

[0179] like Figure 17 As shown, in this embodiment, the magnetization direction of magnet 2 is the X direction, and the direction of the second magnetic field component Hx is the -X direction. The direction of the first magnetic field component Hz becomes the Z direction when moving from a predetermined position along the X direction, and becomes the -Z direction when moving from a predetermined position along the -X direction.

[0180] The magnetic sensor 1 of the magnetic sensor system 100 may also be the magnetic sensor 1 of any of the embodiments in the first to third embodiments. In this case, the magnetic sensor 1 is configured to detect a first magnetic field component Hz as a component of one direction of the target magnetic field.

[0181] Alternatively, the magnetic sensor 1 of the magnetic sensor system 100 may also be the magnetic sensor 1 of the fourth embodiment. In this case, the magnetic sensor 1 is configured to detect the first magnetic field component Hz and the second magnetic field component Hx as components of the two directions of the target magnetic field.

[0182] The other structures, functions, and effects in this embodiment are the same as in any of the embodiments in embodiments 1 to 4.

[0183] Furthermore, the present invention is not limited to the embodiments described above and various modifications are possible. For example, each of the multiple arrays may contain an odd number of structures, either 3 or more. Additionally, the number of groups of the multiple arrays may be other than 4 as shown in the embodiments. For example, the number of groups of the multiple arrays may be 1 or more than 4.

[0184] Furthermore, the magnetic sensor 1 in the first embodiment can also be a half-bridge circuit. That is, the magnetic sensor 1 in the first embodiment may include, as a power supply terminal, a ground terminal, a signal terminal, a first signal path, and a second signal path, a power supply terminal V1, a ground terminal G1, a signal terminal E1, a signal path P1 connecting the power supply terminal V1 and the signal terminal E1, and a signal path P2 connecting the signal terminal E1 and the ground terminal G1.

[0185] Furthermore, in the fourth embodiment, the first and second detection circuits 11 and 12 can each be a half-bridge circuit. That is, the first detection circuit 11 may include, as the first power supply terminal, the first ground terminal, the first signal terminal, the first signal path, and the second signal path, a power supply terminal V11, a ground terminal G11, a signal terminal E11, a signal path P11 connecting the power supply terminal V11 and the signal terminal E11, and a signal path P12 connecting the signal terminal E11 and the ground terminal G11. Similarly, the second detection circuit 12 may include, as the second power supply terminal, the second ground terminal, the second signal terminal, the third signal path, and the fourth signal path, a power supply terminal V12, a ground terminal G12, a signal terminal E21, a signal path P21 connecting the power supply terminal V12 and the signal terminal E21, and a signal path P22 connecting the signal terminal E21 and the ground terminal G12.

[0186] Furthermore, the structure of the plurality of first arrays 161A and the plurality of second arrays 161B in the fourth embodiment may also be the same as the structure of the plurality of first arrays 61A and the plurality of second arrays 61B in the second or third embodiment.

[0187] Furthermore, in the fourth embodiment, the plurality of MR elements 20 of the first detection circuit 11 and the plurality of MR elements 20 of the second detection circuit 12 are not limited to being formed on the inclined surfaces 30a and 30b of the plurality of grooves 30c, but may also be formed on the inclined surfaces of the plurality of protrusions that protrude from the upper surface of the support 30 in the Z direction.

[0188] The magnetic sensor of this invention can be applied to various sensor devices such as current detection devices and electronic compasses for detecting geomagnetism.

[0189] Furthermore, the magnetic field generating unit of the magnetic sensor system of the present invention can also be a magnet installed on an object at the desired detection position, and this magnet is configured to move in conjunction with the object. Therefore, the magnetic sensor system of the present invention can be used as a magnetic sensor system for detecting the position of various objects. The magnetic sensor system of the present invention can be applied to various sensor devices such as rotation detection devices, relative position detection devices, encoders, angle detection devices, or magnetic switches.

[0190] Examples of applications of magnetic sensor systems include at least one lens drive mechanism (optical hand vibration correction mechanism and autofocus mechanism) in imaging devices such as cameras. The at least one lens drive mechanism includes: a lens, a lens support mechanism that supports the lens in a movable manner, and a drive device for moving the lens. A magnet is mounted on the lens support mechanism. When the lens is driven, the relative position between the magnetic sensor and the magnet changes. As a result, at least the intensity of the magnetic field component generated by the magnet and applied to the magnetic sensor changes. The magnetic sensor detects a portion of the magnetic field containing the aforementioned magnetic field component as the target magnetic field, generating a detection value corresponding to the position of the magnet linked to the lens. The direction of the portion of the magnetic field changes in a virtual plane parallel to the direction of the aforementioned magnetic field component.

[0191] Furthermore, as other application examples of the magnetic sensor system, artificial joints such as those used in industrial robots can be cited. This artificial joint includes: a movable part; a support part that supports the movable part in a manner that allows the movable part to rotate; and a joint connecting the movable part and the support part. The movable part rotates about a rotation axis. The variable range of the movable part is within 360°. To apply the magnetic sensor system of the present invention to an artificial joint, for example, a magnetic sensor is fixed to the support part, and a magnet is fixed to the movable part. When the movable part rotates, the relative position of the magnet with respect to the magnetic sensor rotates about the magnetic sensor. Thus, the direction of the magnetic field component generated by the magnet and applied to the magnetic sensor rotates about the position where the magnetic sensor is positioned. The magnetic sensor detects a portion of the magnetic field containing the aforementioned magnetic field component as the target magnetic field, generating a detection value corresponding to the rotational position of the movable part. The direction of the portion of the magnetic field varies within a virtual plane parallel to the direction of the aforementioned magnetic field component, i.e., a virtual plane perpendicular to the rotation axis.

[0192] Based on the above description, it is clear that various methods and variations of the present invention can be implemented. Therefore, the present invention can also be implemented in ways other than the preferred methods described above, within the scope equivalent to that of the claims.

Claims

1. A magnetic sensor, characterized in that, have: The first and second paths of current flow respectively; Multiple structures disposed in the first path and the second path; and Multiple first electrodes and multiple second electrodes connected in series with the plurality of structures The first path contains multiple first arrays. The second path comprises multiple second arrays. The plurality of first arrays of the first path and the plurality of second arrays of the second path are arranged in a manner in which the first arrays of the first path and the second arrays of the second path are arranged alternately in the first direction. Each of the plurality of first arrays and the plurality of second arrays contains an odd number of the plurality of constructs, and the odd number of constructs are arranged in a manner that is aligned in the second direction. At least one of the odd number of structures is a structure containing a magnetoresistive element. The plurality of first electrodes and the plurality of second electrodes are arranged at different positions relative to each other in the third direction, and in each of the plurality of first arrays and the plurality of second arrays, the first electrodes and the second electrodes are alternately arranged one by one in the direction of current flow. Each of the plurality of first arrays of the first path includes a first structure located at one end in a direction parallel to the second direction, and a second structure located at one end in the opposite direction. Each of the plurality of second arrays in the second path includes a third structure located at one end in the one direction and a fourth structure located at the opposite end in the opposite direction. Two of the first structures in the plurality of first arrays of the first path, which are spaced apart in the first direction, are connected to each other through one of the plurality of first electrodes. The two second structures of the two first arrays are connected to each other via one of the plurality of second electrodes. Two of the third structures in the plurality of second arrays of the second path, which are spaced apart in the first direction, are connected to each other through another of the plurality of second electrodes. The two fourth structures of the two second arrays are connected to each other through another of the plurality of first electrodes.

2. The magnetic sensor as described in claim 1, characterized in that: Each of the odd-numbered structures has a first face and a second face located at both ends of the third direction. The first surface is connected to one of the plurality of first electrodes. The second surface is connected to one of the plurality of second electrodes.

3. The magnetic sensor as described in claim 1, characterized in that: The number of the plurality of first electrodes disposed in the plurality of first arrays, the number of the plurality of second electrodes disposed in the plurality of first arrays, the number of the plurality of first electrodes disposed in the plurality of second arrays, and the number of the plurality of second electrodes disposed in the plurality of second arrays are the same.

4. The magnetic sensor as described in claim 1, characterized in that: Each of the odd-numbered structures is a structure containing the magnetoresistive effect element.

5. The magnetic sensor as described in claim 1, characterized in that: At least one of the odd-numbered structures, other than the structure containing the magnetoresistive effect element, is a connection structure configured to connect one of the plurality of first electrodes and one of the plurality of second electrodes.

6. The magnetic sensor as described in claim 1, characterized in that: The number of magnetoresistive elements included in the first path is the same as the number of magnetoresistive elements included in the second path.

7. The magnetic sensor as described in claim 1, characterized in that: The number of magnetoresistive elements contained in each of the first and second paths is even.

8. The magnetic sensor as described in claim 1, characterized in that: The plurality of first arrays includes a first specific array located at the end of a direction parallel to the first direction. The plurality of second arrays includes a second specific array located at the end of one direction parallel to the first direction. When viewed from the third direction, the direction of current flow in the first specific array is the same as the direction of current flow in the second specific array.

9. The magnetic sensor as described in claim 1, characterized in that: The plurality of first arrays includes a first specific array located at the end of a direction parallel to the first direction. The plurality of second arrays includes a second specific array located at the end of one direction parallel to the first direction. When viewed from the third direction, the direction of current flow in the first specific array is opposite to the direction of current flow in the second specific array.

10. The magnetic sensor as described in claim 1, characterized in that: It also features multiple magnetic yokes made of soft magnetic materials. The plurality of magnetic yokes have a first end face and a second end face located at both ends in the first direction. Each of the plurality of first arrays is disposed near the first end face, and each of the plurality of second arrays is disposed near the second end face.

11. The magnetic sensor as claimed in claim 1, characterized in that, It also has: Power terminals; One or two signal terminals; One or two first signal paths connecting the power supply terminal to the one or two signal terminals; and One or two second signal paths that connect one or two signal terminals to ground. The first path and the second path are two of the one or two first signal paths and the one or two second signal paths.

12. The magnetic sensor as claimed in claim 1, characterized in that, It also has: Power terminal 1; Second power terminal; One or two first signal terminals; One or two second signal terminals; One or two first signal paths connecting the first power terminal to the one or two first signal terminals; One or two second signal paths connecting the one or two first signal terminals to ground; One or two third signal paths connecting the second power supply terminal to one or two second signal terminals; and One or two fourth signal paths connecting the one or two second signal terminals to the ground. The first path is one of the one or two first signal paths and the one or two second signal paths. The second path is one of the one or two third signal paths and the one or two fourth signal paths.

13. The magnetic sensor as described in claim 1, characterized in that: The first path further includes: a first sub-array disposed in the first path between one end of the first path and the plurality of first arrays; and a second sub-array disposed in the first path between the other end of the first path and the plurality of first arrays, The second path includes: a third sub-array disposed at one end of the second path between the plurality of second arrays; and a fourth sub-array disposed at the other end of the second path between the plurality of second arrays. Each of the first, second, third, and fourth sub-arrays contains the same number of constructs as the odd number of constructs from the plurality of constructs. The same number of structures as the odd number of structures are arranged in the second direction. At least one of the structures that is the same number as the odd number of structures is a structure containing the magnetoresistive effect element. The first sub-array and one end of the first path, the second sub-array and the other end of the first path, the third sub-array and one end of the second path, and the fourth sub-array and the other end of the second path are each connected through one of the plurality of second electrodes.

14. The magnetic sensor as described in claim 1, characterized in that: The first path further includes: a plurality of first sub-arrays disposed in the first path between one end of the first path and the plurality of first arrays; and a plurality of second sub-arrays disposed in the first path between the other end of the first path and the plurality of first arrays, The second path further includes: a plurality of third sub-arrays disposed in the second path between one end of the second path and the plurality of second arrays; and a plurality of fourth sub-arrays disposed in the second path between the other end of the second path and the plurality of second arrays. Each of the plurality of first sub-arrays, each of the plurality of second sub-arrays, each of the plurality of third sub-arrays, and each of the plurality of fourth sub-arrays comprises a plurality of structures or a single structure that is less than the odd number of structures. Each of the plurality of structures less than the odd number of structures and the single structure is a structure containing the magnetoresistive effect element.

15. The magnetic sensor as described in claim 14, characterized in that: Regarding the number of structures contained in each of the plurality of first sub-arrays, the first sub-array closer to one end of the first path contains fewer structures. Regarding the number of structures contained in each of the plurality of second sub-arrays, the second sub-arrays closer to the other end of the first path contain fewer structures. Regarding the number of structures contained in each of the plurality of third sub-arrays, the third sub-arrays closer to one end of the second path contain fewer structures. Regarding the number of structures contained in each of the plurality of fourth sub-arrays, the fourth sub-arrays closer to the other end of the second path contain fewer structures.

16. The magnetic sensor as described in claim 1, characterized in that: It also includes multiple electrode plates connected to the first path and the second path. The plurality of electrode plates are arranged at the same position in the third direction.

17. The magnetic sensor as claimed in claim 1, characterized in that: A portion of the first path and a portion of the second path are positioned at different locations in the third direction and are connected to each other by a connecting structure.

18. The magnetic sensor as claimed in claim 1, characterized in that: The magnetic sensor is configured to detect one directional component of the magnetic field of the object.

19. The magnetic sensor as claimed in claim 1, characterized in that: The magnetic sensor is configured to detect two directional components of the magnetic field of the object.

20. A magnetic sensor system, characterized in that, have: The magnetic sensor according to claim 1; and It is configured to generate a magnetic field.

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