A method and device for determining process environment parameter values, and a diffusion method and system

Abstract

The application discloses a process environment parameter value determination method and device, a diffusion method and system, relates to the field of solar cells, and aims to provide a technical scheme for improving the stability of sheet resistance. The process environment parameter value determination method comprises the following steps: acquiring a current environment humidity value in a time period when a current transplanted silicon wafer enters a diffusion device. Acquiring a corresponding relationship between environment humidity data and sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value. Based on the corresponding relationship between the environment humidity data and the sheet resistance data, a current sheet resistance value corresponding to the current environment humidity value is determined. When the current sheet resistance value and a target sheet resistance value do not match, based on a plurality of preset environment humidity values under the target sheet resistance value and a preset process environment parameter value corresponding to each preset environment humidity value, a compensated process environment parameter value corresponding to the current environment humidity value is determined.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of solar cells, in particular to a process environment parameter value determination method and device, a diffusion method and system. BACKGROUND

[0002] In the current period, crystalline silicon solar cells mainly use nitrogen to carry the doping source into a diffusion device where the transplanted silicon wafer is loaded in advance, and the PN junction is manufactured through a thermal diffusion process. And, the sheet resistance is usually used to represent the performance parameters of the PN junction.

[0003] In the production process of making PN junction, the sheet resistance is affected by many factors such as the amount of doping source, temperature, time and pressure, etc. At present, the sheet resistance stability is controlled by comparing the sheet resistance obtained in the last diffusion cycle with the target sheet resistance, and then adjusting the process parameters in the next cycle according to the industry experience. However, the adjustment of the process parameters has a lag, and subjective judgment can also cause a large fluctuation of the sheet resistance. In order to more accurately control the sheet resistance and improve the stability of the sheet resistance, the process parameters must be changed for compensation adjustment in each production cycle.

[0004] Therefore, there is an urgent need for a process environment parameter value determination method which can accurately and quickly compensate and adjust the process parameters, avoid batch defective products caused by untimely adjustment, further improve the production capacity and yield, and reduce the production cost of crystalline silicon solar cells. SUMMARY

[0005] The purpose of the present application is to provide a process environment parameter value determination method and device, a diffusion method and system, which can efficiently improve the stability of the sheet resistance and reduce the production cost of crystalline silicon solar cells.

[0006] In a first aspect, the present application provides a process environment parameter value determination method. The process environment parameter value determination method comprises:

[0007] Obtaining a current environmental humidity value in a time period when a current transplanted silicon wafer enters a diffusion device.

[0008] Obtaining a corresponding relationship between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value.

[0009] Based on the corresponding relationship between the environmental humidity data and the sheet resistance data, determining a current sheet resistance value corresponding to the current environmental humidity value.

[0010] When the current sheet resistance value and the target sheet resistance value do not match, determining a compensated process environment parameter value corresponding to the current environmental humidity value based on a plurality of pre-stored environmental humidity values under the target sheet resistance value and a pre-stored process environment parameter value corresponding to each pre-stored environmental humidity value.

[0011] In the technical solution, the influence of the environmental humidity on the sheet resistance stability of the diffusion-treated wafer is reduced. Before the current wafer is diffused, the current environmental humidity value in the time period when the wafer enters the diffusion device is obtained, so that the process environmental parameter value when the wafer is diffused is adjusted according to the current environmental humidity value. In addition, the corresponding relationship between the environmental humidity data and the sheet resistance data in the time period when the wafer enters the diffusion device under the same preset process environmental parameter value is obtained, and the corresponding relationship is used to determine that, under the current environmental humidity value, if the wafer is diffused by using the preset process environmental parameter value, the sheet resistance of the wafer after the diffusion treatment is the current sheet resistance value. When the current sheet resistance value does not match the target sheet resistance value that meets the working requirement, the current environmental humidity value is used to determine the compensated process environmental parameter value based on the multiple preset environmental humidity values under the target sheet resistance value and the preset process environmental parameter value corresponding to each preset environmental humidity value. In this case, in the actual application, the wafer is diffused under the current environmental humidity value and based on the compensated process environmental parameter value, so that the actual sheet resistance value of the wafer after the diffusion treatment matches the target sheet resistance value, the influence of the environmental humidity change on the thickness of the thermal oxidation layer formed in the high-temperature environment before the wafer is put into the boat is effectively improved, the automatic determination of the process environmental parameter value is realized, the problem that the sheet resistance of the wafer after the diffusion treatment fluctuates greatly due to the manual adjustment of the process environmental parameter value in the prior art is solved, the stability of the actual sheet resistance value of the wafer after the diffusion treatment is improved, and the yield of the solar cell manufactured based on the wafer is further improved.

[0012] In a possible implementation, the determination of the compensated process environmental parameter value corresponding to the current environmental humidity value based on the multiple preset environmental humidity values under the target sheet resistance value and the preset process environmental parameter value corresponding to each preset environmental humidity value comprises:

[0013] The multiple preset environmental humidity values under the target sheet resistance value and the preset process environmental parameter value corresponding to each preset environmental humidity value are analyzed to determine a fitting relationship between the environmental humidity parameter and the process environmental parameter value under the target sheet resistance value.

[0014] The compensated process environmental parameter value corresponding to the current environmental humidity value is determined based on the fitting relationship and the current environmental humidity value.

[0015] In the technical solution, the fitting relationship is obtained by analyzing a plurality of pre-stored environmental humidity values under the target sheet resistance and pre-stored process environmental parameter values corresponding to each pre-stored environmental humidity value, and is used to represent the relationship between the environmental humidity parameter and the process environmental parameter value under the target sheet resistance. In this case, based on the fitting relationship and the current environmental humidity value, the compensated process environmental parameter value corresponding to the current environmental humidity value under the target sheet resistance can be accurately determined, the accuracy of the determined compensated process environmental parameter value is improved, and in actual application, the actual sheet resistance value of the current transferred silicon wafer after diffusion treatment based on the determined compensated process environmental parameter value under the current environmental humidity value matches the target sheet resistance value, and the stability of the actual sheet resistance value of the current transferred silicon wafer after diffusion treatment is further improved.

[0016] In a possible implementation, the plurality of pre-stored environmental humidity values include a first pre-stored environmental humidity value in the environmental humidity data and at least two second pre-stored environmental humidity values in the environmental humidity data. The plurality of pre-stored process environmental parameter values include a first pre-stored process environmental parameter value corresponding to the first pre-stored environmental humidity value and a second pre-stored process environmental parameter value corresponding to each second pre-stored environmental humidity value. The first pre-stored process environmental parameter value is a preset process environmental parameter value.

[0017] Before the process environmental parameter value determination method analyzes the plurality of pre-stored environmental humidity values under the target sheet resistance and the pre-stored process environmental parameter values corresponding to each pre-stored environmental humidity value to determine the fitting relationship between the environmental humidity parameter and the process environmental parameter value under the target sheet resistance, the process environmental parameter value determination method further includes:

[0018] Obtain the corresponding relationship between the sheet resistance data and the process environmental data under the same preset environmental humidity value.

[0019] Based on the corresponding relationship between the environmental humidity data and the sheet resistance data and the corresponding relationship between the sheet resistance data and the process environmental data, determine the corresponding relationship between the environmental humidity increment and the process environmental parameter increment.

[0020] Determine the environmental humidity difference between the first pre-stored environmental humidity value and the at least two second pre-stored environmental humidity values.

[0021] Based on the corresponding relationship between the environmental humidity increment and the process environmental parameter increment, determine the second pre-stored process environmental parameter value corresponding to each environmental humidity difference.

[0022] In the technical solution, the corresponding relationship between the environmental humidity increment and the process environmental parameter increment can be determined by first determining the corresponding relationship between the environmental humidity increment and the process environmental parameter increment, and then determining the second pre-stored process environmental parameter value corresponding to each environmental humidity difference value based on the corresponding relationship between the environmental humidity increment and the process environmental parameter increment. This can more accurately determine the multiple pre-stored environmental humidity values corresponding to the target sheet resistance value and the pre-stored process environmental parameter value corresponding to each pre-stored environmental humidity value.

[0023] In a possible implementation, the determination of the corresponding relationship between the environmental humidity increment and the process environmental parameter increment based on the corresponding relationship between the environmental humidity data and the sheet resistance data and the corresponding relationship between the sheet resistance data and the process environmental data includes:

[0024] The corresponding relationship between the environmental humidity increment and the sheet resistance increment is determined based on the corresponding relationship between the environmental humidity data and the sheet resistance data.

[0025] The corresponding relationship between the process environmental parameter increment and the sheet resistance increment is determined based on the corresponding relationship between the sheet resistance data and the process environmental data.

[0026] The corresponding relationship between the environmental humidity increment and the process environmental parameter increment is determined based on the corresponding relationship between the environmental humidity increment and the sheet resistance increment and the corresponding relationship between the process environmental parameter increment and the sheet resistance increment.

[0027] In the technical solution, the corresponding relationship between the environmental humidity increment and the process environmental parameter increment can be determined by first determining the corresponding relationship between the environmental humidity increment and the process environmental parameter increment, and then determining the second pre-stored process environmental parameter value corresponding to each environmental humidity difference value based on the corresponding relationship between the environmental humidity increment and the process environmental parameter increment. This can more accurately determine the multiple pre-stored environmental humidity values corresponding to the target sheet resistance value and the pre-stored process environmental parameter value corresponding to each pre-stored environmental humidity value.

[0028] In a possible implementation, before the fitting relationship between the environmental humidity parameter and the process environmental parameter value corresponding to the target sheet resistance value is determined by analyzing the multiple pre-stored environmental humidity values corresponding to the target sheet resistance value and the pre-stored process environmental parameter value corresponding to each pre-stored environmental humidity value, the method further includes: obtaining the multiple pre-stored environmental humidity values corresponding to the target sheet resistance value and the pre-stored process environmental parameter value corresponding to each pre-stored environmental humidity value.

[0029] In the technical solution, before the compensated process environment parameter value corresponding to the current environment humidity value is determined, the plurality of pre-stored environment humidity values and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value under the target sheet resistance value can be obtained in advance. In this case, after it is determined that the current sheet resistance value does not match the target sheet resistance value, the compensated process environment parameter value corresponding to the current humidity value can be determined based on the plurality of pre-stored environment humidity values and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value under the target sheet resistance value, which can save the waiting time for determining the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value in actual application, thereby improving the rate of determining the compensated process environment parameter value, and further improving the production capacity of diffusion processing. Meanwhile, another optional solution for obtaining the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value is provided, and the applicability of the present application in different application scenarios is improved.

[0030] In a possible implementation, the process environment parameter value includes one or more of a temperature value in the diffusion device, a gas flow value in the diffusion device, and a pressure value in the diffusion device. In this case, the type of the process environment parameter value has a plurality of optional solutions, and the type of the process environment parameter value can be selected according to the requirements of the actual application scenario, which can improve the applicability of the process environment parameter value determination method provided by the present application in different application scenarios.

[0031] In a possible implementation, the plurality of pre-stored environment humidity values include a first pre-stored environment humidity value in the environment humidity data. The plurality of pre-stored process environment parameter values include a preset process environment parameter value corresponding to the first pre-stored environment humidity value. In the case where the process environment parameter value is a temperature value in the diffusion device, the fitting relationship includes:

[0032] T=A×(R-R0)2+B×(R-R0)+T0.

[0033] wherein T is the process environment parameter value, T0 is the preset process environment parameter value, R is the environment humidity parameter, R0 is the first pre-stored environment humidity value, and A and B are fitting coefficients of the environment humidity parameter and the process environment parameter value.

[0034] In a possible implementation, the current environment humidity value in the time period when the current transplanted silicon wafer enters the diffusion device is obtained, including:

[0035] A plurality of actual environment humidity values in the time period when the current transplanted silicon wafer enters the diffusion device are obtained.

[0036] The arithmetic mean of the plurality of actual environment humidity values is determined as the current environment humidity value.

[0037] In the technical solution, the arithmetic mean of the plurality of actual environment humidity values is determined as the current environment humidity value, so that a more reliable current environment humidity value can be obtained, and a reliable data basis for determining the compensated process environment parameter value is provided, so that the influence of the change of the environment humidity on the thickness of the thermal oxide layer formed under the high-temperature environment before the wafer is put into the boat can be avoided, the stability of the sheet resistance is further improved, and the production cost of the crystalline silicon cell is reduced.

[0038] In a second aspect, the present application further provides a diffusion method, which comprises:

[0039] The process environment parameter value determination method described in the first aspect or any possible implementation manner of the first aspect.

[0040] The current transplanted silicon wafer is subjected to diffusion treatment under the current environment humidity value and based on the compensated process environment parameter value.

[0041] In a possible implementation manner, the diffusion method further comprises:

[0042] When the current sheet resistance value matches the target sheet resistance value, the current transplanted silicon wafer is subjected to diffusion treatment under the current environment humidity value and based on the preset process environment parameter value.

[0043] In a third aspect, the present application further provides a process environment parameter value determination device. The process environment parameter value determination device comprises:

[0044] A first acquisition module is configured to acquire a current environment humidity value within a time period when a current transplanted silicon wafer enters a diffusion device.

[0045] A second acquisition module is configured to acquire a corresponding relationship between environment humidity data and sheet resistance data within the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value.

[0046] A first determination module is configured to determine a current sheet resistance value corresponding to the current environment humidity value under the preset process environment parameter value based on the corresponding relationship between the environment humidity data and the sheet resistance data.

[0047] A second determination module is configured to, when the current sheet resistance value does not match a target sheet resistance value, determine a compensated process environment parameter value corresponding to the current environment humidity value based on a plurality of preset environment humidity values under the target sheet resistance value and a preset process environment parameter value corresponding to each preset environment humidity value.

[0048] In a possible implementation manner, the second determination module comprises:

[0049] The first determining sub-module is configured to analyze a plurality of pre-stored environment humidity values at a target sheet resistance and pre-stored process environment parameter values corresponding to each pre-stored environment humidity value, and determine a fitting relationship between the environment humidity parameter and the process environment parameter value at the target sheet resistance.

[0050] The second determining sub-module is configured to determine a compensated process environment parameter value corresponding to the current environment humidity value based on the fitting relationship and the current environment humidity value.

[0051] In a possible implementation, the plurality of pre-stored environment humidity values include a first pre-stored environment humidity value in the environment humidity data and at least two second pre-stored environment humidity values in the environment humidity data.

[0052] The plurality of pre-stored process environment parameter values include a first pre-stored process environment parameter value corresponding to the first pre-stored environment humidity value and a second pre-stored process environment parameter value corresponding to each second pre-stored environment humidity value. The first pre-stored process environment parameter value is a preset process environment parameter value.

[0053] The process environment parameter value determining apparatus further includes:

[0054] The third determining module is configured to determine an environment humidity difference value between the first pre-stored environment humidity value and the at least two second pre-stored environment humidity values.

[0055] The third obtaining module is configured to obtain a corresponding relationship between the sheet resistance data and the process environment data at a same preset environment humidity value.

[0056] The fourth determining module is configured to determine a corresponding relationship between the environment humidity increment and the process environment parameter increment based on the corresponding relationship between the environment humidity data and the sheet resistance data and the corresponding relationship between the sheet resistance data and the process environment data.

[0057] The fifth determining module is configured to determine a second pre-stored process environment parameter value corresponding to each environment humidity difference value based on the corresponding relationship between the environment humidity increment and the process environment parameter increment.

[0058] In a possible implementation, the fourth determining module includes:

[0059] The third determining sub-module is configured to determine a corresponding relationship between the environment humidity increment and the sheet resistance increment based on the corresponding relationship between the environment humidity data and the sheet resistance data.

[0060] The fourth determining sub-module is configured to determine a corresponding relationship between the process environment parameter increment and the sheet resistance increment based on the corresponding relationship between the sheet resistance data and the process environment data.

[0061] The fifth determining sub-module is configured to determine a corresponding relationship between the environmental humidity increment and the process environment parameter increment based on a corresponding relationship between the environmental humidity increment and the sheet resistance increment and a corresponding relationship between the process environment parameter increment and the sheet resistance increment.

[0062] In a possible implementation, the process environment parameter value determining apparatus further includes:

[0063] The third obtaining module is configured to obtain a plurality of pre-stored environmental humidity values at the target sheet resistance value and a pre-stored process environment parameter value corresponding to each pre-stored environmental humidity value.

[0064] In a possible implementation, the first obtaining module includes:

[0065] The first obtaining sub-module is configured to obtain a plurality of actual environmental humidity values in a time period during which the current transplanted silicon wafer enters the diffusion device.

[0066] The sixth determining sub-module is configured to determine an arithmetic mean of the plurality of actual environmental humidity values as the current environmental humidity value.

[0067] In a fourth aspect, the present application further provides a diffusion system. The diffusion device includes:

[0068] The process environment parameter value determining apparatus as described in the third aspect or any possible implementation of the third aspect.

[0069] The first diffusion device is configured to diffuse the current transplanted silicon wafer based on the compensated process environment parameter value at the current environmental humidity value.

[0070] In a possible implementation, the diffusion system further includes a second diffusion device configured to diffuse the current transplanted silicon wafer based on the preset process environment parameter value at the current environmental humidity value when the current sheet resistance value matches the target sheet resistance value.

[0071] In a fifth aspect, the present application further provides an electronic device. The electronic device includes one or more processors and one or more machine-readable media having instructions stored thereon. When the instructions are executed by the one or more processors, the process environment parameter value determining method as described in the first aspect or any possible implementation of the first aspect or the diffusion method as described in the second aspect or any possible implementation of the second aspect is performed.

[0072] The beneficial effects of the second aspect to the fifth aspect and various implementations thereof in the present application can be analyzed with reference to the beneficial effects of the first aspect and various implementations thereof, which will not be repeated here. BRIEF DESCRIPTION OF DRAWINGS

[0073] The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application. In the drawings:

[0074] Figure 1 A system structure schematic diagram of a production process of a crystalline silicon cell provided by an embodiment of the application is shown;

[0075] Figure 2 A flow schematic diagram of a process environment parameter value determination method provided by an embodiment of the application is shown;

[0076] Figure 3 A flow schematic diagram of another process environment parameter value determination method provided by an embodiment of the application is shown;

[0077] Figure 4 A data schematic diagram of a compensation corresponding relationship of an environment humidity difference of a test process and a compensated process environment parameter value provided by an embodiment of the application is shown;

[0078] Figure 5 An operation schematic diagram of an environment humidity and corresponding sheet resistance data after compensation processing of a process environment parameter value provided by an embodiment of the application is shown;

[0079] Figure 6 A flow schematic diagram of still another process environment parameter value determination method provided by an embodiment of the application is shown;

[0080] Figure 7 A structure schematic diagram of a process environment parameter value determination apparatus provided by an embodiment of the application is shown;

[0081] Figure 8 A structure schematic diagram of a diffusion system further provided by an embodiment of the application is shown;

[0082] Figure 9 A hardware structure schematic diagram of an electronic device provided by an embodiment of the application is shown;

[0083] Figure 10 A structure schematic diagram of a chip provided by an embodiment of the application is shown. DETAILED DESCRIPTION

[0084] For the convenience of clearly describing the technical solutions of the embodiments of the present application, in the embodiments of the present application, the same items or similar items with basically the same functions and effects are distinguished by using "first", "second", and the like. For example, the first threshold and the second threshold are merely used to distinguish different thresholds, and the order is not limited. Those skilled in the art can understand that "first", "second", and the like do not limit the quantity and execution order, and "first", "second", and the like do not necessarily mean different.

[0085] It should be noted that in the present application, "exemplary" or "for example" is used to represent an example, illustration, or description. Any embodiment or design scheme described as "exemplary" or "for example" in the present application should not be interpreted as more preferred or more advantageous than other embodiments or design schemes. Rather, the use of "exemplary" or "for example" is intended to present the relevant concept in a specific manner.

[0086] In the present application, "at least one" means one or more, and "multiple" means two or more. "And / or" describes the association between the associated objects, indicating that there can be three relationships, for example, A and / or B, which can represent the following cases: A exists alone, A and B exist together, and B exists alone, where A and B can be singular or plural. The character " / " generally represents an "or" relationship between the associated objects before and after it. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, at least one of a, b, or c can represent: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b, and c, where a, b, and c can be single or multiple.

[0087] At present, the compensation adjustment of process parameters mainly relies on employees to predict and adjust the process parameters for the next production cycle based on the square resistance results of the previous production cycle. With this method, employees can only make predictions and adjustments based on the square resistance results of the previous production cycles and their personal work experience, without analyzing and adjusting the fundamental process condition variables. When the law of process condition changes suddenly changes, the process parameters cannot be accurately predicted and adjusted. In the process of employees predicting and adjusting process parameters, they can perform certain analysis on temperature, flow rate and pressure based on the process operation records of the machine, and predict and adjust the process parameters based on the square resistance results of the previous production cycles. The inventors of this application found that large fluctuations in ambient humidity have a particularly significant impact on the thickness of the thermal oxide layer formed in a high-temperature environment before entering the boat. The thickness of the thermal oxide layer formed in a high-temperature environment on the surface of the transplanted silicon wafer before entering the boat is an important factor affecting the stability of the square resistance during continuous production. Large fluctuations in ambient humidity will lead to greater fluctuations in the square resistance, which will further lead to a significant increase in the frequency of adjustments, high labor load intensity for employees, reduced stability of the square resistance, and is not conducive to reducing the production cost of crystalline silicon cells.

[0088] In order to solve the above technical problems, an embodiment of the present application provides a method for determining process environment parameter values. Figure 1 A schematic diagram of the system structure of a production process of a crystalline silicon cell provided in an embodiment of the present application is shown. Figure 1 As shown, the production structure includes a transfer device 01, a diffusion device 03, an electronic device 04 and an environmental humidity detection device 05. Among them, the transfer device 01 is used to carry and transport the transplanted silicon wafer 02. The environmental humidity detection device 05 is connected to the electronic device 04. The specific setting position of the environmental humidity detection device 05 can be determined according to the actual application scenario. For example, the environmental humidity detection device 05 can be set above the transfer device 01. The electronic device 04 is connected to the diffusion device. The electronic device can be a machine control computer. A production cycle of a crystalline silicon battery can include the following three steps: Step S1: Transplanting the silicon wafer 02 into the diffusion device 03 through the transfer device 01. Step S2: Processing. Step S3: Unloading the transplanted silicon wafer 02 out of the diffusion device 03. The process in which ambient humidity affects the thickness of the thermal oxide layer formed in the high-heat environment before entering the boat occurs during the above-mentioned step S1. The present application determines the compensated process environment parameter value corresponding to the current ambient humidity value based on multiple pre-stored ambient humidity values ​​at the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored ambient humidity value. At this time, the currently transplanted silicon wafer is subjected to diffusion processing based on the compensated process environment parameter value at the current ambient humidity value. After the diffusion processing, the actual sheet resistance value of the currently transplanted silicon wafer matches the target sheet resistance value, and the above-mentioned step S2 is completed. This can effectively reduce the impact of ambient humidity changes on the thickness of the thermal oxide layer formed in the high-heat environment before entering the boat, improve the stability of the sheet resistance, and reduce the production cost of crystalline silicon cells.

[0089] Figure 2 A flowchart of a process environment parameter value determination method provided by an embodiment of the present application is shown in FIG. 1. As shown in FIG. 1, the process environment parameter value determination method comprises the following steps. Figure 2

[0090] Step 101: Obtain a current environment humidity value in a time period when a current transplanted silicon wafer enters a diffusion device.

[0091] In the present application, the current environment humidity value can be detected by an environment humidity detection device, and the current environment humidity value is combined with Figure 1 After the environment humidity detection device 05 detects the current environment humidity value, the current environment humidity value is sent to the electronic device 04. In actual application, the environment humidity detection device can be a hygrometer for detecting the current environment humidity value, and the specific structure of the environment humidity detection device is not limited in the present application, and can be adjusted according to the actual application scenario.

[0092] In the present application, the specific implementation of step 101 can include the following sub-steps:

[0093] Sub-step A1: Obtain a plurality of actual environment humidity values in the time period when the current transplanted silicon wafer enters the diffusion device.

[0094] Sub-step A2: Determine the arithmetic mean of the plurality of actual environment humidity values as the current environment humidity value, so that a more reliable current environment humidity value can be obtained, which provides a reliable data basis for subsequent determination of the compensated process environment parameter value, further ensures that the influence of the change of the environment humidity on the thickness of the thermal oxide layer formed under the high-temperature environment before the wafer is loaded into the boat can be avoided, the stability of the sheet resistance is improved, and the production cost of the crystalline silicon cell is reduced.

[0095] Step 102: Obtain a corresponding relationship between environment humidity data and sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value.

[0096] In the present application, the environment humidity detection device 05 can detect the environment humidity data in the time period when the transplanted silicon wafer enters the diffusion device, that is, the environment humidity data of the diffusion device in which the transplanted silicon wafer is located in the time period from when one end of the transplanted silicon wafer enters the diffusion device to when the transplanted silicon wafer completely enters the diffusion device, and the environment humidity data is transmitted to the electronic device 04. Figure 1 The corresponding sheet resistance data of the environment humidity data can be obtained by the electronic device. The environment humidity data can include a plurality of environment humidity values, and the sheet resistance data can include a plurality of sheet resistance values corresponding to the plurality of environment humidity values, so that the corresponding relationship between the environment humidity data and the sheet resistance data can be obtained.

[0097] ​Optionally, the correspondence between the environmental humidity data and the sheet resistance data can be saved in the electronic device in the form of a table.

[0098] The preset process environment parameter value can be any process environment parameter value that has an influence on the sheet resistance of the diffused transplanting silicon wafer. For example, the preset process environment parameter value includes one or more of a temperature value in the diffusion device, a gas flow value in the diffusion device, and a pressure value in the diffusion device. For example, the preset process environment parameter value is the temperature value in the diffusion device. For another example, the preset process environment parameter value includes the temperature value in the diffusion device and the gas flow value in the diffusion device. In addition, the present application does not limit the size of the preset process environment parameter value, as long as the same preset process environment parameter value is maintained during the process of obtaining the correspondence between the environmental humidity data and the sheet resistance data.

[0099] In the present application, Table 1 shows the correspondence between the environmental humidity values and the sheet resistance values in the sheet resistance data:

[0100] Table 1

[0101]

[0102]

[0103] In the present application, the execution order of the above steps 101 and 102 is not limited.

[0104] Step 103: Based on the correspondence between the environmental humidity data and the sheet resistance data, determine the current sheet resistance value corresponding to the current environmental humidity value.

[0105] In the present application, the electronic device can match the current environmental humidity value with the correspondence between the environmental humidity data and the sheet resistance data to determine the current sheet resistance value corresponding to the current environmental humidity value.

[0106] Step 104: When the current sheet resistance value and the target sheet resistance value do not match, based on the multiple pre-stored environmental humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environmental humidity value, determine the compensated process environment parameter value corresponding to the current environmental humidity value.

[0107] In the present application, the multiple pre-stored environmental humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environmental humidity value can be analyzed to determine the fitting relationship between the environmental humidity parameter and the process environment parameter value under the target sheet resistance value. Further, based on the fitting relationship and the current environmental humidity value, the compensated process environment parameter value corresponding to the current environmental humidity value is determined.

[0108] In summary, the process environment parameter value determination method provided by the embodiments of the present application reduces the influence of environmental humidity on the sheet resistance stability of the diffusion-treated seed silicon wafer during the diffusion treatment of the seed silicon wafer. Based on this, the current environmental humidity value in the time period when the current seed silicon wafer enters the diffusion device is obtained in advance before the diffusion treatment of the current seed silicon wafer, so as to adjust the process environment parameter value when the current seed silicon wafer is subjected to the diffusion treatment according to the current environmental humidity value. In addition, the corresponding relationship between the environmental humidity data and the sheet resistance data in the time period when the seed silicon wafer enters the diffusion device under the same preset process environment parameter value is also obtained, and based on the corresponding relationship, it is determined that if the current seed silicon wafer is subjected to the diffusion treatment by using the above-mentioned preset process environment parameter value under the current environmental humidity value, the sheet resistance of the current seed silicon wafer after the diffusion treatment is the current sheet resistance value. When the current sheet resistance value does not match the target sheet resistance value that meets the working requirements, the compensated process environment parameter value corresponding to the current environmental humidity value can be determined based on the multiple pre-stored environmental humidity values under the target sheet resistance value and the pre-stored process environment parameter values corresponding to each pre-stored environmental humidity value. In this case, in the actual application process, the current seed silicon wafer is subjected to the diffusion treatment under the current environmental humidity value and based on the above-mentioned determined compensated process environment parameter value, which can make the actual sheet resistance value of the current seed silicon wafer after the diffusion treatment match the target sheet resistance value, effectively improve the influence of the change of environmental humidity on the thickness of the thermal oxidation layer formed in the high-temperature environment before the wafer is put into the boat, and also realize the automatic determination of the process environment parameter value, solve the problem of large fluctuation of the sheet resistance of the diffusion-treated seed silicon wafer caused by the artificial adjustment of the process environment parameter value in the prior art, improve the stability of the actual sheet resistance value of the current seed silicon wafer after the diffusion treatment, and further improve the yield of the solar cell manufactured based on the current seed silicon wafer.

[0109] Figure 3 A flowchart of another process environment parameter value determination method provided by the embodiments of the present application is shown, as shown in FIG. 4, the process environment parameter value determination method comprises the following steps. Figure 3

[0110] Step 201: Obtain the current environmental humidity value in the time period when the current seed silicon wafer enters the diffusion device.

[0111] In the present application, the current environmental humidity value can be detected by an environmental humidity detection device, combined with Figure 1 After the environmental humidity detection device 05 detects the current environmental humidity value, the current environmental humidity value is sent to the electronic device 04. In actual application, the environmental humidity detection device can be a hygrometer for detecting the current environmental humidity value, and the specific structure of the environmental humidity detection device is not limited in the embodiments of the present application, and can be adjusted according to the actual application scene. ​

[0112] In the present application, the specific implementation of step 201 can include the following sub-steps:

[0113] Sub-step A1: Obtain a plurality of actual environmental humidity values in the time period when the current transplanted silicon wafer enters the diffusion device.

[0114] Sub-step A2: Determine the arithmetic mean of the plurality of actual environmental humidity values as the current environmental humidity value, which can obtain a more reliable current environmental humidity value, provide a reliable data basis for subsequent determination of the compensated process environmental parameter value, further ensure that the influence of environmental humidity change on the thermal oxide layer thickness formed under high heat before entering the boat can be avoided, the stability of the sheet resistance is improved, and the production cost of the crystalline silicon cell is reduced.

[0115] Step 202: Obtain the corresponding relationship between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environmental parameter value.

[0116] In the present application, in combination with Figure 1 , the environmental humidity detection device 05 can detect the environmental humidity data in the time period when the transplanted silicon wafer enters the diffusion device, that is, the environmental humidity data in the diffusion device where the transplanted silicon wafer is located during the time from one end of the transplanted silicon wafer entering the quartz tube to the transplanted silicon wafer completely entering the quartz tube, and the environmental humidity data is transmitted to the electronic device 04. The electronic device can obtain the sheet resistance data corresponding to the environmental humidity data. The environmental humidity data can include a plurality of environmental humidity values, and the sheet resistance data can include a plurality of sheet resistance values corresponding to the plurality of environmental humidity values, and then the corresponding relationship between the environmental humidity data and the sheet resistance data can be obtained.

[0117] Optionally, the corresponding relationship between the environmental humidity data and the sheet resistance data can be saved in the electronic device in the form of a table.

[0118] Among them, the preset process environmental parameter value includes one or more of the temperature value in the diffusion device, the gas flow value in the diffusion device and the pressure value in the diffusion device, and the specific parameter value of the preset process environmental parameter value is not limited in the present application. It is required to ensure that the same process environmental parameter value is maintained during the process of obtaining the corresponding relationship between the environmental humidity data and the sheet resistance data.

[0119] Step 203: Determine the current sheet resistance value corresponding to the current environmental humidity value based on the corresponding relationship between the environmental humidity data and the sheet resistance data.

[0120] In the present application, the electronic device can match the current environmental humidity value with the corresponding relationship between the environmental humidity data and the sheet resistance data to determine the current sheet resistance value corresponding to the current environmental humidity value.

[0121] Step 204: Obtain the correspondence between the square resistance data and the process environment data under the same preset environment humidity value.

[0122] In the present application, the electronic device can obtain the correspondence between the square resistance data and the process environment data under the same preset environment humidity value. Specifically, the electronic device can obtain the process environment parameter value corresponding to each square resistance value in the square resistance data under the same preset environment humidity value, and obtain the correspondence between the square resistance data and the process environment data.

[0123] In the present application, the execution order of the above-mentioned step 202 and step 204 is not specifically limited.

[0124] Step 205: Determine the correspondence between the environment humidity increment and the process environment parameter increment based on the correspondence between the environment humidity data and the square resistance data, and the correspondence between the square resistance data and the process environment data.

[0125] In the present application, the specific implementation of the above-mentioned step 205 can include the following sub-steps:

[0126] Sub-step B1: Determine the correspondence between the environment humidity increment and the square resistance increment based on the correspondence between the environment humidity data and the square resistance data.

[0127] In the present application, the electronic device can determine the square resistance increment corresponding to the humidity increment of a preset unit based on the correspondence between the environment humidity data and the square resistance data, that is, determine the relationship between the environment humidity increment and the square resistance increment.

[0128] Sub-step B2: Determine the correspondence between the process environment parameter increment and the square resistance increment based on the correspondence between the square resistance data and the process environment data.

[0129] In the present application, the electronic device can determine the process environment parameter increment corresponding to the adjustment of the square resistance by a square resistance increment according to the correspondence between the square resistance data and the process environment data obtained in the above-mentioned step 204, and obtain the correspondence between the process environment parameter increment and the square resistance increment.

[0130] In the present application, the execution order of the above-mentioned sub-step B1 and sub-step B2 is not specifically limited.

[0131] Sub-step B3: Determine the correspondence between the environment humidity increment and the process environment parameter increment based on the correspondence between the environment humidity increment and the square resistance increment, and the correspondence between the process environment parameter increment and the square resistance increment.

[0132] In the present application, the corresponding relationship between the environmental humidity increment and the sheet resistance increment can be determined in combination with the corresponding relationship between the process environmental parameter increment and the sheet resistance increment, the sheet resistance increment corresponding to the environmental humidity increment is determined, and the process environmental parameter adjustment amount corresponding to the sheet resistance adjustment once is further determined, that is, the corresponding relationship between the environmental humidity increment and the process environmental parameter increment is determined, so that the second preset process environmental parameter value corresponding to each environmental humidity difference value can be determined based on the corresponding relationship between the environmental humidity increment and the process environmental parameter increment.

[0133] For example, when the process environmental parameter value is the temperature value in the diffusion device, the sheet resistance increment corresponding to the humidity increment of 1% is 1.3 ohms, and the temperature process environmental parameter increment corresponding to the humidity increment of 1% is 0.09 degrees Celsius. The present application does not make specific limitations on this, and the actual application scene can be adjusted specifically.

[0134] Step 206: determining the environmental humidity difference between the first preset environmental humidity value and the at least two second preset environmental humidity values.

[0135] In the present application, the plurality of preset environmental humidity values includes a first preset environmental humidity value in the environmental humidity data and at least two second preset environmental humidity values in the environmental humidity data.

[0136] Step 207: determining the second preset process environmental parameter value corresponding to each environmental humidity difference value based on the corresponding relationship between the environmental humidity increment and the process environmental parameter increment.

[0137] In the present application, the plurality of preset process environmental parameter values includes a first preset process environmental parameter value corresponding to the first preset environmental humidity value and a second preset process environmental parameter value corresponding to each second preset environmental humidity value. The first preset process environmental parameter value is a preset process environmental parameter value.

[0138] Optionally, the first pre-stored process environment parameter value can be processed based on the correspondence between the environmental humidity increment and the process environment parameter increment, and the environmental humidity difference value, to obtain a second pre-stored process environment parameter value corresponding to each environmental humidity difference value, that is, to determine a plurality of pre-stored environmental humidity values under the target sheet resistance value and a pre-stored process environment parameter value corresponding to each pre-stored environmental humidity value. Then, based on the plurality of pre-stored environmental humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environmental humidity value, the compensated process environment parameter value corresponding to the current environmental humidity value can be determined. In this case, in the actual application process, the current transferred silicon wafer is subjected to diffusion treatment under the current environmental humidity value and based on the above-determined compensated process environment parameter value, which can make the actual sheet resistance value of the current transferred silicon wafer after diffusion treatment match the target sheet resistance value, effectively improve the influence of environmental humidity change on the thickness of the thermal oxide layer formed under the high-temperature environment before being loaded into the boat, and also realize automatic determination of the process environment parameter value, solve the problem of large sheet resistance fluctuation of the transferred silicon wafer after diffusion treatment caused by simply adjusting the process environment parameter value by manual adjustment in the prior art, improve the stability of the actual sheet resistance value of the current transferred silicon wafer after diffusion treatment, and further improve the yield of the solar cell manufactured based on the current transferred silicon wafer.

[0139] Figure 4 A data diagram of a compensation correspondence relationship between the environmental humidity difference value of the test process and the compensated process environment parameter value provided by the embodiment of the present application is shown. As shown in the diagram, the horizontal axis x represents the environmental humidity difference value (R-R0), and the vertical axis y represents the temperature compensation parameter T. After the processing of steps 206 and 207, a plurality of data points shown in the diagram can be obtained. Figure 4 Figure 4 The horizontal coordinate of the plurality of data points is the difference between the plurality of second pre-stored environmental humidity values and the first pre-stored environmental humidity value in the plurality of pre-stored environmental humidity values, and the vertical coordinate is the pre-stored process environment parameter value corresponding to the plurality of pre-stored environmental humidity values, that is, the vertical coordinate is the compensated process environment parameter value corresponding to the difference between the plurality of second pre-stored environmental humidity values and the first pre-stored environmental humidity value.

[0140] Step 208: When the current sheet resistance value and the target sheet resistance value do not match, the plurality of pre-stored environmental humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environmental humidity value are analyzed to determine a fitting relationship between the environmental humidity parameter and the process environment parameter value under the target sheet resistance value.

[0141] ​The fitting relationship is obtained by analyzing a plurality of pre-stored environmental humidity values under the target sheet resistance and a plurality of pre-stored process environmental parameter values corresponding to each pre-stored environmental humidity value, and is used to represent the relationship between the environmental humidity parameter and the process environmental parameter value under the target sheet resistance. In this case, based on the fitting relationship and the current environmental humidity value, the compensated process environmental parameter value corresponding to the current environmental humidity value under the target sheet resistance can be accurately determined, the accuracy of the determined compensated process environmental parameter value is improved, and in actual application, the actual sheet resistance value of the current transferred silicon wafer after diffusion treatment based on the determined compensated process environmental parameter value under the current environmental humidity value matches the target sheet resistance value, and the stability of the actual sheet resistance value of the current transferred silicon wafer after diffusion treatment is further improved.

[0142] In the present application, referring to Figure 4 , the plurality of data points shown in Figure 4 , the horizontal coordinate is the difference between the plurality of second pre-stored environmental humidity values and the first pre-stored environmental humidity value, and the vertical coordinate is the pre-stored process environmental parameter value corresponding to the plurality of pre-stored environmental humidity values, that is, the vertical coordinate is the compensated process environmental parameter value corresponding to the difference between the plurality of second pre-stored environmental humidity values and the first pre-stored environmental humidity value, fitting processing is performed to determine the fitting relationship between the environmental humidity parameter and the process environmental parameter value under the target sheet resistance, y = -10.964x 2 + 17.688x + 769.95.

[0143] In the present application, the process environmental parameter value includes one or more of the temperature value in the diffusion device, the gas flow value in the diffusion device, and the pressure value in the diffusion device.

[0144] Optionally, the plurality of pre-stored environmental humidity values includes a first pre-stored environmental humidity value in the environmental humidity data. The plurality of pre-stored process environmental parameter values includes a pre-set process environmental parameter value corresponding to the first pre-stored environmental humidity value. In the case where the process environmental parameter value is the temperature value in the diffusion device, the fitting relationship includes:

[0145] T = A x (R - R0) 2 + B x (R - R0) + T0.

[0146] Wherein, T is the process environmental parameter value, T0 is the pre-set process environmental parameter value, R is the environmental humidity parameter, R0 is the first pre-stored environmental humidity value, A and B are fitting coefficients of the environmental humidity parameter and the process environmental parameter value, and different processes correspond to different fitting coefficients of the environmental humidity value and the compensated process temperature value. The specific fitting coefficients can be determined according to the actual application scenario.

[0147] For example, asFigure 4 As shown, y = -10.964x 2 +17.688x+769.95, where A is -10.964, B is 17.688, T0 is 769.95, and R 2 =0.9998. Specifically, the corresponding relationship between the ambient humidity difference (R-R0) and the process environment parameter value T is shown in Table 2 below:

[0148]

[0149]

[0150] Step 209: Based on the fitting relationship and the current ambient humidity value, determine the compensated process environment parameter value corresponding to the current ambient humidity value.

[0151] In the present application, the process environment parameter value includes one or more of a temperature value within the diffusion device, a gas flow value within the diffusion device, and a pressure value within the diffusion device.

[0152] In the case where the preset process environment parameter value includes the temperature value in the diffusion device, the compensated process environment parameter value correspondingly includes the temperature value in the diffusion device. In the case where the preset process environment parameter value includes the flow value in the diffusion device, the compensated process environment parameter value correspondingly includes the flow value in the diffusion device. In the case where the preset process environment parameter value includes the pressure value in the diffusion device, the compensated process environment parameter value correspondingly includes the pressure value in the diffusion device. In the case where the preset process environment parameter value includes the temperature value in the diffusion device and the gas flow value in the diffusion device, the compensated process environment parameter value correspondingly includes the temperature value in the diffusion device and the gas flow value in the diffusion device. The embodiments of the present application do not make specific limitations on this, and can be adjusted according to the actual application scenario.

[0153] Figure 5 FIG. 1 shows an operation diagram of the ambient humidity and the corresponding square resistance data after the process environment parameter value is compensated, as provided in an embodiment of the present application. Figure 5 As shown, Figure 5 The square resistance data in the figure refers to the average square resistance of a tube. Figure 5 It can be seen that when the ambient humidity keeps changing, the square resistance remains stable. Therefore, it can be seen that the present application can effectively improve the effect of ambient humidity changes on the thickness of the thermal oxide layer formed in the high-temperature environment before entering the boat, improve the stability of the square resistance, and further reduce the production cost of crystalline silicon cells.

[0154] In summary, the process environment parameter value determination method provided by the embodiments of the present application reduces the influence of the environmental humidity on the sheet resistance stability of the diffusion-treated seed silicon wafer during the diffusion treatment of the seed silicon wafer. Based on this, the current environmental humidity value in the time period when the current seed silicon wafer enters the diffusion device is obtained in advance before the diffusion treatment of the current seed silicon wafer, so as to adjust the process environment parameter value during the diffusion treatment of the current seed silicon wafer according to the current environmental humidity value. In addition, the corresponding relationship between the environmental humidity data and the sheet resistance data in the time period when the seed silicon wafer enters the diffusion device under the same preset process environment parameter value is also obtained, and based on the corresponding relationship, it is determined that if the preset process environment parameter value is used for the diffusion treatment of the current seed silicon wafer under the current environmental humidity value, the sheet resistance of the current seed silicon wafer after the diffusion treatment is the current sheet resistance value. When the current sheet resistance value does not match the target sheet resistance value that meets the working requirements, the compensated process environment parameter value corresponding to the current environmental humidity value can be determined based on the multiple pre-stored environmental humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environmental humidity value. In this case, in the actual application process, the diffusion treatment of the current seed silicon wafer is performed under the current environmental humidity value and based on the above-determined compensated process environment parameter value, so that the actual sheet resistance value of the current seed silicon wafer after the diffusion treatment matches the target sheet resistance value, effectively improves the influence of the environmental humidity change on the thickness of the thermal oxidation layer formed in the high-temperature environment before the wafer is put into the boat, and also realizes the automatic determination of the process environment parameter value, solves the problem of large sheet resistance fluctuation of the diffusion-treated seed silicon wafer caused by the artificial adjustment of the process environment parameter value in the prior art, improves the stability of the actual sheet resistance value of the current seed silicon wafer after the diffusion treatment, and further improves the yield of the solar cell manufactured based on the current seed silicon wafer.

[0155] Figure 6 A flowchart of another process environment parameter value determination method provided by the embodiments of the present application is shown, as shown in Figure 6 The method comprises the following steps:

[0156] Step 301: Obtain the current environmental humidity value in the time period when the current seed silicon wafer enters the diffusion device.

[0157] Step 302: Obtain the corresponding relationship between the environmental humidity data and the sheet resistance data in the time period when the seed silicon wafer enters the diffusion device under the same preset process environment parameter value.

[0158] Step 303: Determine the current sheet resistance value corresponding to the current environmental humidity value based on the corresponding relationship between the environmental humidity data and the sheet resistance data.

[0159] Step 304: obtaining a plurality of pre-stored environmental humidity values under the target resistance value and a pre-stored process environmental parameter value corresponding to each pre-stored environmental humidity value.

[0160] Step 305: analyzing the plurality of pre-stored environmental humidity values under the target resistance value and the pre-stored process environmental parameter value corresponding to each pre-stored environmental humidity value to determine a fitting relationship between the environmental humidity parameter under the target resistance value and the process environmental parameter value.

[0161] Step 306: determining the compensated process environmental parameter value corresponding to the current environmental humidity value based on the fitting relationship and the current environmental humidity value.

[0162] Before determining the compensated process environmental parameter value corresponding to the current environmental humidity value, the plurality of pre-stored environmental humidity values under the target resistance value and the pre-stored process environmental parameter value corresponding to each pre-stored environmental humidity value can be obtained in advance. In this case, after it is determined that the current resistance value does not match the target resistance value, the compensated process environmental parameter value corresponding to the current humidity value can be directly determined based on the plurality of pre-stored environmental humidity values under the target resistance value and the pre-stored process environmental parameter value corresponding to each pre-stored environmental humidity value, which can save the waiting time for determining the pre-stored process environmental parameter value corresponding to each pre-stored environmental humidity value in actual application, thereby improving the rate of determining the above-mentioned compensated process environmental parameter value, and further improving the capacity of diffusion processing. At the same time, it also provides another optional solution for obtaining the pre-stored process environmental parameter value corresponding to each pre-stored environmental humidity value, and improves the applicability of the present application in different application scenarios.

[0163] In the present application, the influence degree of the environmental humidity in the process of diffusion treatment of the transplanted silicon wafer on the sheet resistance stability of the transplanted silicon wafer after diffusion treatment is reduced. Based on this, before the current transplanted silicon wafer is subjected to diffusion treatment, the current environmental humidity value in the time period when the current transplanted silicon wafer enters the diffusion device is obtained in advance, so as to adjust the process environment parameter value when the current transplanted silicon wafer is subjected to diffusion treatment according to the current environmental humidity value. In addition, the corresponding relationship between the environmental humidity data and the sheet resistance data in the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value is also obtained, and based on the corresponding relationship, it is determined that under the current environmental humidity value, if the above-mentioned preset process environment parameter value is used to subject the current transplanted silicon wafer to diffusion treatment, the sheet resistance of the transplanted silicon wafer after diffusion treatment is the current sheet resistance value. Wherein, when the current sheet resistance value and the target sheet resistance value meeting the working requirements do not match, based on the multiple pre-stored environmental humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environmental humidity value, the compensated process environment parameter value corresponding to the current environmental humidity value can be determined. In this case, in the actual application process, the current transplanted silicon wafer is subjected to diffusion treatment under the current environmental humidity value and based on the above-mentioned determined compensated process environment parameter value, so that the actual sheet resistance value of the transplanted silicon wafer after diffusion treatment and the target sheet resistance value match, effectively improving the influence of the change of environmental humidity on the thickness of the thermal oxidation layer formed under the high-temperature environment before being put into the boat, and also realizing the automatic determination of the process environment parameter value, solving the problem of large sheet resistance fluctuation of the transplanted silicon wafer after diffusion treatment caused by simply adjusting the process environment parameter value by manual in the prior art, improving the stability of the actual sheet resistance value of the current transplanted silicon wafer after diffusion treatment, and further improving the yield of the solar cell manufactured based on the current transplanted silicon wafer.

[0164] The present application also provides a diffusion method, comprising Figures 1-6 The process environment parameter value determination method of any one of the above, the current transplanted silicon wafer is subjected to diffusion treatment under the current environmental humidity value and based on the compensated process environment parameter value. The actual sheet resistance value of the transplanted silicon wafer after diffusion treatment and the target sheet resistance value match.

[0165] Optionally, when the current sheet resistance value and the target sheet resistance value match, the current transplanted silicon wafer is subjected to diffusion treatment under the current environmental humidity value and based on the preset process environment parameter value.

[0166] In summary, when the current sheet resistance value does not match the target sheet resistance value that meets the working requirement, the pre-stored process environment parameter value corresponding to the current environment humidity value can be determined based on the multiple pre-stored environment humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value. In this case, in the actual application process, the current transferred silicon wafer is subjected to diffusion treatment under the current environment humidity value and based on the above-determined compensated process environment parameter value, so that the actual sheet resistance value of the current transferred silicon wafer after diffusion treatment matches the target sheet resistance value, effectively improves the influence of the change of the environment humidity on the thickness of the thermal oxide layer formed under the high-temperature environment before being put into the boat, and also realizes the automatic determination of the process environment parameter value, solves the problem of the large fluctuation of the sheet resistance of the transferred silicon wafer after diffusion treatment caused by the simple manual adjustment of the process environment parameter value in the prior art, improves the stability of the actual sheet resistance value of the current transferred silicon wafer after diffusion treatment, and further improves the yield of the solar cell manufactured based on the current transferred silicon wafer.

[0167] Figure 7 A structure diagram of a process environment parameter value determination device provided by an embodiment of the present application is shown, which is applied to Figures 1-6 any process environment parameter value determination method, such as Figure 7 shown, the process environment parameter value determination device 400 comprises:

[0168] The first acquisition module 401 is configured to acquire the current environment humidity value in the time period when the current transferred silicon wafer enters the diffusion device.

[0169] The second acquisition module 402 is configured to acquire the corresponding relationship between the environment humidity data and the sheet resistance data in the time period when the transferred silicon wafer enters the diffusion device under the same pre-set process environment parameter value.

[0170] The first determination module 403 is configured to determine the current sheet resistance value corresponding to the current environment humidity value under the pre-set process environment parameter value based on the corresponding relationship between the environment humidity data and the sheet resistance data.

[0171] The second determination module 404 is configured to determine the compensated process environment parameter value corresponding to the current environment humidity value based on the multiple pre-stored environment humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value when the current sheet resistance value does not match the target sheet resistance value.

[0172] In a possible implementation manner, the second determination module comprises:

[0173] The first determination sub-module is configured to analyze the multiple pre-stored environment humidity values under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored environment humidity value, and determine the fitting relationship between the environment humidity parameter and the process environment parameter value under the target sheet resistance value.

[0174] The second determining sub-module is configured to determine a compensated process environment parameter value corresponding to the current environment humidity value based on the fitting relationship and the current environment humidity value.

[0175] In a possible implementation, the plurality of pre-stored environment humidity values include a first pre-stored environment humidity value in the environment humidity data and at least two second pre-stored environment humidity values in the environment humidity data.

[0176] The plurality of pre-stored process environment parameter values include a first pre-stored process environment parameter value corresponding to the first pre-stored environment humidity value and a second pre-stored process environment parameter value corresponding to each second pre-stored environment humidity value. The first pre-stored process environment parameter value is a preset process environment parameter value.

[0177] The device further includes:

[0178] The third determining module is configured to determine an environment humidity difference value between the first pre-stored environment humidity value and the at least two second pre-stored environment humidity values.

[0179] The third obtaining module is configured to obtain a corresponding relationship between the sheet resistance data and the process environment data under the same preset environment humidity value.

[0180] The fourth determining module is configured to determine a corresponding relationship between the environment humidity increment and the process environment parameter increment based on the corresponding relationship between the environment humidity data and the sheet resistance data and the corresponding relationship between the sheet resistance data and the process environment data.

[0181] The fifth determining module is configured to determine a second pre-stored process environment parameter value corresponding to each environment humidity difference value based on the corresponding relationship between the environment humidity increment and the process environment parameter increment.

[0182] In a possible implementation, the fourth determining module includes:

[0183] The third determining sub-module is configured to determine a corresponding relationship between the environment humidity increment and the sheet resistance increment based on the corresponding relationship between the environment humidity data and the sheet resistance data.

[0184] The fourth determining sub-module is configured to determine a corresponding relationship between the process environment parameter increment and the sheet resistance increment based on the corresponding relationship between the sheet resistance data and the process environment data.

[0185] The fifth determining sub-module is configured to determine the corresponding relationship between the environment humidity increment and the process environment parameter increment based on the corresponding relationship between the environment humidity increment and the sheet resistance increment and the corresponding relationship between the process environment parameter increment and the sheet resistance increment.

[0186] In a possible implementation, the device further includes:

[0187] The third obtaining module is configured to obtain a plurality of pre-stored environment humidity values under a target resistance value and pre-stored process environment parameter values corresponding to each pre-stored environment humidity value.

[0188] In a possible implementation, the first obtaining module comprises:

[0189] The first obtaining sub-module is configured to obtain a plurality of actual environment humidity values within a time period during which the current transplanted silicon wafer enters the diffusion device.

[0190] The sixth determining sub-module is configured to determine an arithmetic mean value of the plurality of actual environment humidity values as the current environment humidity value.

[0191] In summary, the process environment parameter value determination device provided by the embodiments of the present application reduces the influence of environment humidity on the resistance stability of the transplanted silicon wafer after diffusion treatment. Therefore, the current environment humidity value within a time period during which the current transplanted silicon wafer enters the diffusion device is obtained in advance before the diffusion treatment of the current transplanted silicon wafer, so that the process environment parameter value when the current transplanted silicon wafer is subjected to diffusion treatment can be adjusted accordingly according to the current environment humidity value. In addition, the corresponding relationship between the environment humidity data and the resistance data within the time period during which the transplanted silicon wafer enters the diffusion device under the same pre-set process environment parameter value is obtained, and based on the corresponding relationship, it is determined that if the pre-set process environment parameter value is used to perform diffusion treatment on the current transplanted silicon wafer under the current environment humidity value, the resistance of the current transplanted silicon wafer after diffusion treatment is the current resistance value. When the current resistance value does not match the target resistance value that meets the working requirements, the pre-stored environment humidity values under the target resistance value and the pre-stored process environment parameter values corresponding to each pre-stored environment humidity value can be used to determine the compensated process environment parameter value corresponding to the current environment humidity value. In this case, in the actual application process, the current transplanted silicon wafer is subjected to diffusion treatment under the current environment humidity value and based on the compensated process environment parameter value determined above, so that the actual resistance value of the current transplanted silicon wafer after diffusion treatment can match the target resistance value, effectively improving the influence of environment humidity change on the thickness of the thermal oxidation layer formed in the high-temperature environment before being put into the boat, and realizing the automatic determination of the process environment parameter value. The problem of large resistance fluctuation of the transplanted silicon wafer after diffusion treatment caused by simply adjusting the process environment parameter value by manual operation in the prior art is solved, the stability of the actual resistance value of the current transplanted silicon wafer after diffusion treatment is improved, and the yield of the solar cell manufactured based on the current transplanted silicon wafer is further improved.

[0192] The process environment parameter value determination device provided by the present application can implement the process environment parameter value determination method as shown in Figures 1-6 To avoid repetition, details are not described here.

[0193] Figure 8 A structural schematic diagram of a diffusion system provided by an embodiment of the present application is shown in FIG. 5. Figure 8 As shown in FIG. 5, the diffusion system 500 includes Figure 7 The process environment parameter value determination apparatus 400 shown in FIG. 4, and the first diffusion apparatus 501, are configured to perform diffusion processing on the current transplanted silicon wafer based on the compensated process environment parameter value at the current environmental humidity value.

[0194] Optionally, referring to Figure 8 The diffusion system 500 further includes the second diffusion apparatus 502, which is configured to perform diffusion processing on the current transplanted silicon wafer based on the preset process environment parameter value at the current environmental humidity value when the current sheet resistance value matches the target sheet resistance value.

[0195] The diffusion system provided by the present application can implement the diffusion method of the present application, and thus will not be described herein again to avoid repetition.

[0196] The electronic device in the embodiments of the present application can be an apparatus, a component, an integrated circuit, or a chip in a terminal. The apparatus can be a mobile electronic device or a non-mobile electronic device. Exemplarily, the mobile electronic device can be a mobile phone, a tablet computer, a notebook computer, a palm computer, a vehicle-mounted electronic device, a wearable device, an ultra-mobile personal computer (UMPC), a netbook, or a personal digital assistant (PDA), etc., and the non-mobile electronic device can be a server, a network attached storage (NAS), a personal computer (PC), a television (TV), a teller machine, or a self-service machine, etc., and the embodiments of the present application are not limited in this regard.

[0197] The electronic device in the embodiments of the present application can be an apparatus with an operating system. The operating system can be an Android operating system, an ios operating system, or other possible operating systems, and the embodiments of the present application are not limited in this regard.

[0198] Figure 9 A hardware structural schematic diagram of an electronic device provided by an embodiment of the present application is shown in FIG. 6. As shown in FIG. 6, the electronic device 600 includes a processor 610. Figure 9

[0199] As shown in FIG. 6, the electronic device 600 includes a processor 610. Figure 9 ​As shown, the processor 610 may be a general-purpose central processing unit (CPU), a microprocessor, an application-specific integrated circuit (ASIC), or one or more integrated circuits for controlling the execution of the program of the present application.

[0200] like Figure 9 As shown, the electronic device 600 may further include a communication line 640. The communication line 640 may include a path for transmitting information between the components.

[0201] Optional, such as Figure 9 As shown, the electronic device may further include a communication interface 620. There may be one or more communication interfaces 620. The communication interface 620 may use any transceiver or other device for communicating with other devices or a communication network.

[0202] Optional, such as Figure 9 As shown, the electronic device may further include a memory 630. The memory 630 is used to store computer-executable instructions for executing the solution of the present application, and the execution is controlled by the processor. The processor is used to execute the computer-executable instructions stored in the memory, thereby implementing the method provided by the embodiment of the present application.

[0203] like Figure 9 As shown, the memory 630 can be a read-only memory (ROM) or other type of static storage device that can store static information and instructions, a random access memory (RAM) or other type of dynamic storage device that can store information and instructions, or an electrically erasable programmable read-only memory (EEPROM), a compact disc read-only memory (CD-ROM) or other optical disc storage, an optical disc storage (including a compact disc, laser disc, optical disc, digital versatile disc, Blu-ray disc, etc.), a magnetic disk storage medium or other magnetic storage device, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and can be accessed by a computer, but is not limited thereto. The memory 630 can exist independently and be connected to the processor 610 via a communication line 640. The memory 630 can also be integrated with the processor 610.

[0204] Optionally, the computer-executable instructions in the embodiments of the present application may also be referred to as application code, which is not specifically limited in the embodiments of the present application.

[0205] In a particular implementation, as an example, as shown in Figure 9 FIG. 6, the processor 610 can include one or more CPUs, such as CPU0 and CPU1 in Figure 9 FIG. 6.

[0206] In a particular implementation, as an example, as shown in Figure 9 FIG. 6, the terminal device can include a plurality of processors, such as the processors in Figure 9 FIG. 6. Each of the processors can be a single-core processor or a multi-core processor.

[0207] Figure 10 FIG. 7 is a structural schematic diagram of a chip provided by an embodiment of the present application. As shown in Figure 10 FIG. 7, the chip 700 includes one or more (including two) processors 610.

[0208] Optionally, as shown in Figure 10 FIG. 7, the chip further includes a communication interface 620 and a memory 630. The memory 630 can include a read-only memory and a random access memory, and provide the processor with operation instructions and data. A part of the memory can further include a non-volatile random access memory (NVRAM).

[0209] In some embodiments, as shown in Figure 10 FIG. 7, the memory 630 stores the following elements, execution modules or data structures, or a subset of them, or an extended set of them.

[0210] In an embodiment of the present application, as shown in Figure 10 FIG. 7, corresponding operations are performed by invoking the operation instructions stored in the memory (which can be stored in an operating system).

[0211] As shown in Figure 10 FIG. 6, the processor 610 controls the processing operation of any of the terminal devices. The processor 610 can also be referred to as a central processing unit (CPU).

[0212] As shown in Figure 10 FIG. 7, the memory 630 can include a read-only memory and a random access memory, and provide the processor with instructions and data. A part of the memory 630 can further include an NVRAM. For example, the memory, the communication interface and the memory are coupled together through a bus system, which can include a data bus, a power supply bus, a control bus and a state signal bus, etc. in addition to the data bus. However, for the purpose of clear illustration, only the data bus is shown in Figure 10Various buses are labeled as bus system 710.

[0213] As shown in Figure 10 The method disclosed in the embodiments of the present application can be applied to a processor or implemented by the processor. The processor can be an integrated circuit chip having a processing capability. In the implementation process, each step of the method can be completed by integrated logic circuits or instructions in the form of software in the processor. The processor can be a general processor, a digital signal processor (DSP), an ASIC, a field-programmable gate array (FPGA) or other programmable logic device, a discrete gate or transistor logic device, a discrete hardware component. Each method, step and logic block diagram disclosed in the embodiments of the present application can be implemented or executed. The general processor can be a microprocessor or any conventional processor. The steps of the method disclosed in conjunction with the embodiments of the present application can be directly embodied as a hardware code processor for execution, or a combination of hardware and software modules in the code processor for execution. The software module can be located in a random access memory, a flash memory, a read-only memory, a programmable read-only memory or an electrically erasable programmable memory, a register or other mature storage medium in the art. The storage medium is located in the memory, and the processor reads the information in the memory and combines the hardware to complete the steps of the above method.

[0214] In one aspect, a computer readable storage medium is provided, and the computer readable storage medium stores instructions, when the instructions are executed, the functions executed by the terminal device in the above embodiments are implemented.

[0215] In one aspect, a chip is provided, and the chip is applied to a terminal device, the chip includes at least one processor and a communication interface, the communication interface is coupled with the at least one processor, and the processor is used to run instructions to implement the functions executed by the process environment parameter value determination method or the diffusion method in the above embodiments.

[0216] In the above embodiments, all or part can be implemented by software, hardware, firmware or any combination thereof. When implemented by software, all or part can be implemented in the form of a computer program product. The computer program product includes one or more computer programs or instructions. When the computer programs or instructions are loaded and executed on a computer, the processes or functions of the embodiments of the present application are performed wholly or partially. The computer can be a general purpose computer, a special purpose computer, a computer network, a terminal, user equipment or other programmable apparatus. The computer programs or instructions can be stored in a computer readable storage medium or transferred from one computer readable storage medium to another computer readable storage medium, for example, the computer programs or instructions can be transferred from one website site, computer, server or data center to another website site, computer, server or data center through wired or wireless manner. The computer readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server, data center and the like integrated with one or more available media. The available media can be a magnetic medium, for example, a floppy disk, a hard disk, a magnetic tape; or an optical medium, for example, a digital video disc (digital video disc, DVD); or a semiconductor medium, for example, a solid state drive (solid state drive, SSD).

[0217] Although the present application is described herein in conjunction with various embodiments, it is understood that other variations of the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from an inspection of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and the indefinite articles "a" or "an" do not exclude a plurality. A single processor or other unit can fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to an advantage. Although the present application is described in conjunction with specific embodiments thereof, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art in light of the foregoing description. Accordingly, it is intended to embrace all such alternatives, modifications and variations as can come within the scope of the appended claims. It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application cover modifications and variations of this application provided they come within the scope of the appended claims and their equivalents.

Claims

1. A method for determining a process environment parameter value, characterized in that: include: Obtain the current ambient humidity value during the time period when the current transplanted silicon wafer enters the diffusion device; Obtaining a corresponding relationship between environmental humidity data and sheet resistance data during a period of time when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value; Determining a current square resistance value corresponding to the current ambient humidity value based on a correspondence between the ambient humidity data and the square resistance data; When the current square resistance value does not match the target square resistance value, determining a compensated process environment parameter value corresponding to the current ambient humidity value based on a plurality of pre-stored ambient humidity values ​​under the target square resistance value and a pre-stored process environment parameter value corresponding to each of the pre-stored ambient humidity values; The step of determining the compensated process environment parameter value corresponding to the current ambient humidity value based on a plurality of pre-stored ambient humidity values ​​under the target square resistance value and a pre-stored process environment parameter value corresponding to each of the pre-stored ambient humidity values ​​includes: Analyzing a plurality of pre-stored ambient humidity values ​​under the target sheet resistance value and a pre-stored process environment parameter value corresponding to each pre-stored ambient humidity value to determine a fitting relationship between the ambient humidity parameter under the target sheet resistance value and the process environment parameter value; Based on the fitting relationship and the current ambient humidity value, the compensated process environment parameter value corresponding to the current ambient humidity value is determined.

2. The method for determining a process environment parameter value according to claim 1, wherein: The plurality of pre-stored ambient humidity values ​​include: a first pre-stored ambient humidity value in the ambient humidity data, and at least two second pre-stored ambient humidity values ​​in the ambient humidity data; The plurality of pre-stored process environment parameter values ​​include: a first pre-stored process environment parameter value corresponding to the first pre-stored environmental humidity value, and a second pre-stored process environment parameter value corresponding to each of the second pre-stored environmental humidity values; the first pre-stored process environment parameter value is the preset process environment parameter value; After obtaining the corresponding relationship between the ambient humidity data and the sheet resistance data during the period when the silicon wafer is transplanted into the diffusion device under the same preset process environment parameter value, analyzing the multiple pre-stored ambient humidity values ​​under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each pre-stored ambient humidity value, and determining the fitting relationship between the ambient humidity parameter under the target sheet resistance value and the process environment parameter value, the process environment parameter value determination method further includes: Obtain the corresponding relationship between the square resistance data and the process environment data under the same preset environmental humidity value; Determining a correspondence between an ambient humidity increment and a process environment parameter increment based on the correspondence between the ambient humidity data and the sheet resistance data, and the correspondence between the sheet resistance data and the process environment data; determining an ambient humidity difference between each of the first pre-stored ambient humidity value and at least two of the second pre-stored ambient humidity values; Based on the correspondence between the ambient humidity increment and the process environment parameter increment, the second pre-stored process environment parameter value corresponding to each of the ambient humidity differences is determined.

3. The method for determining a process environment parameter value according to claim 2, wherein: The determining the correspondence between the ambient humidity increment and the process environment parameter increment based on the correspondence between the ambient humidity data and the square resistance data, and the correspondence between the square resistance data and the process environment data, includes: Determining a correspondence between the ambient humidity increment and the square resistance increment based on the correspondence between the ambient humidity data and the square resistance data; Determining a correspondence between the process environment parameter increment and the sheet resistance increment based on the correspondence between the sheet resistance data and the process environment data; Based on the correspondence between the ambient humidity increment and the square resistance increment, and the correspondence between the process environment parameter increment and the square resistance increment, the correspondence between the ambient humidity increment and the process environment parameter increment is determined.

4. The method for determining a process environment parameter value according to claim 1, wherein: Before analyzing the plurality of pre-stored ambient humidity values ​​under the target square resistance value and the pre-stored process environment parameter value corresponding to each pre-stored ambient humidity value to determine a fitting relationship between the ambient humidity parameter under the target square resistance value and the process environment parameter value, the process environment parameter value determination method further includes: Acquire a plurality of the pre-stored environmental humidity values ​​under the target sheet resistance value, and the pre-stored process environment parameter value corresponding to each of the pre-stored environmental humidity values.

5. The method for determining a process environment parameter value according to any one of claims 1 to 4, wherein: The process environment parameter value includes one or more of a temperature value within the diffusion device, a gas flow value within the diffusion device, and a pressure value within the diffusion device.

6. The method for determining a process environment parameter value according to any one of claims 1 to 4, wherein: The plurality of pre-stored ambient humidity values ​​include: a first pre-stored ambient humidity value in the ambient humidity data; the plurality of pre-stored process environment parameter values ​​include: the preset process environment parameter value corresponding to the first pre-stored ambient humidity value; When the process environment parameter value is the temperature value in the diffusion device, the fitting relationship includes: T=A×(R-R0) 2 +B×(R-R0)+T0; Among them, T is the process environment parameter value, T0 is the preset process environment parameter value, R is the ambient humidity parameter, R0 is the first pre-stored ambient humidity value, and A and B are both fitting coefficients of the ambient humidity parameter and the process environment parameter value.

7. The method for determining a process environment parameter value according to any one of claims 1 to 4, characterized in that: The obtaining of the current ambient humidity value during the time period when the transplanted silicon wafer enters the diffusion device includes: Acquire multiple actual ambient humidity values ​​during a time period when the currently transplanted silicon wafer enters the diffusion device; An arithmetic average of the plurality of actual ambient humidity values ​​is determined as the current ambient humidity value.

8. A diffusion method, characterized in that: include: The method for determining a process environment parameter value according to any one of claims 1 to 7; Under the current environmental humidity value, diffusion processing is performed on the currently transplanted silicon wafer based on the compensated process environment parameter value.

9. The diffusion method according to claim 8, characterized in that The diffusion method further comprises: When the current square resistance value matches the target square resistance value, the diffusion process is performed on the currently transplanted silicon wafer under the current environmental humidity value and based on the preset process environment parameter value.

10. A device for determining a process environment parameter value, characterized in that: include: The first acquisition module is used to obtain the current ambient humidity value during the time period when the transplanted silicon wafer enters the diffusion device; The second acquisition module is used to obtain the corresponding relationship between the environmental humidity data and the square resistance data during the time period when the transplanted silicon wafer enters the diffusion device under the same preset process environment parameter value; A first determining module is configured to determine a current sheet resistance value corresponding to the current ambient humidity value under a preset process environment parameter value based on a correspondence between the ambient humidity data and the sheet resistance data; a second determining module, configured to determine, when the current sheet resistance value does not match the target sheet resistance value, a compensated process environment parameter value corresponding to the current ambient humidity value based on a plurality of pre-stored ambient humidity values ​​under the target sheet resistance value and a pre-stored process environment parameter value corresponding to each of the pre-stored ambient humidity values; The second determining module includes: A first determining submodule is configured to analyze the plurality of pre-stored ambient humidity values ​​under the target sheet resistance value and the pre-stored process environment parameter value corresponding to each of the pre-stored ambient humidity values, and determine a fitting relationship between the ambient humidity parameter under the target sheet resistance value and the process environment parameter value; The second determining submodule is configured to determine the compensated process environment parameter value corresponding to the current ambient humidity value based on the fitting relationship and the current ambient humidity value.

11. The process environment parameter value determination device according to claim 10, characterized in that: The plurality of pre-stored ambient humidity values ​​include: a first pre-stored ambient humidity value in the ambient humidity data, and at least two second pre-stored ambient humidity values ​​in the ambient humidity data; The plurality of pre-stored process environment parameter values ​​include: a first pre-stored process environment parameter value corresponding to the first pre-stored environmental humidity value, and a second pre-stored process environment parameter value corresponding to each of the second pre-stored environmental humidity values; the first pre-stored process environment parameter value is the preset process environment parameter value; The process environment parameter value determination device also includes: a third determining module, configured to determine an ambient humidity difference between each of the first pre-stored ambient humidity value and at least two of the second pre-stored ambient humidity values; The third acquisition module is used to obtain the corresponding relationship between the square resistance data and the process environment data under the same preset environmental humidity value; a fourth determining module, configured to determine a correspondence between an ambient humidity increment and a process environment parameter increment based on a correspondence between the ambient humidity data and the sheet resistance data, and a correspondence between the sheet resistance data and the process environment data; The fifth determining module is configured to determine the second pre-stored process environment parameter value corresponding to each of the ambient humidity differences based on the correspondence between the ambient humidity increment and the process environment parameter increment.

12. The process environment parameter value determination device according to claim 11, characterized in that: The fourth determining module includes: a third determining submodule, configured to determine a correspondence between the ambient humidity increment and the square resistance increment based on the correspondence between the ambient humidity data and the square resistance data; a fourth determining submodule, configured to determine a correspondence between the process environment parameter increment and the sheet resistance increment based on the correspondence between the sheet resistance data and the process environment data; The fifth determining submodule is configured to determine the correspondence between the ambient humidity increment and the process environment parameter increment based on the correspondence between the ambient humidity increment and the square resistance increment, and the correspondence between the process environment parameter increment and the square resistance increment.

13. The process environment parameter value determination device according to claim 11, characterized in that: The process environment parameter value determination device also includes: The third acquisition module is configured to acquire a plurality of the pre-stored environmental humidity values ​​under the target sheet resistance value, and the pre-stored process environment parameter value corresponding to each of the pre-stored environmental humidity values.

14. The process environment parameter value determination device according to any one of claims 10 to 13, characterized in that: The first acquisition module includes: A first acquisition submodule is configured to acquire a plurality of actual ambient humidity values ​​during a time period in which the currently transplanted silicon wafer enters the diffusion device; The sixth determining submodule is configured to determine an arithmetic average of the plurality of actual ambient humidity values ​​as the current ambient humidity value.

15. A diffusion system, characterized in that: include: The process environment parameter value determination device according to any one of claims 10 to 14; and a first diffusion device for performing diffusion processing on the currently transplanted silicon wafer based on the compensated process environment parameter value under the current environmental humidity value.

16. The diffusion system according to claim 15, characterized in that The diffusion system further includes a second diffusion device for performing the diffusion process on the currently transplanted silicon wafer under the current environmental humidity value and based on the preset process environment parameter value when the current square resistance value matches the target square resistance value.

17. An electronic device, characterized in that: include: one or more processors; and one or more machine-readable media having instructions stored thereon, wherein when the instructions are executed by the one or more processors, the method for determining the process environment parameter value according to any one of claims 1 to 7 or the diffusion method according to any one of claims 8 to 9 is executed.

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