Substrate processing apparatus

Abstract

The present application relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of switching between high pressure and low pressure to perform substrate processing. The present application discloses a substrate processing apparatus, which comprises a process cavity (100), a substrate support part (200), an internal lead part (300), and an internal lead driving part (600); wherein the internal lead part (300) comprises an internal lead (310) and a gas supply flow path (320).

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing under high pressure and low pressure. BACKGROUND

[0002] The substrate processing apparatus is an apparatus that processes a substrate such as a wafer, and generally performs processes such as etching, deposition, and heat treatment on the substrate.

[0003] At this time, when a film is formed on the substrate after deposition is completed, a process for removing impurities in the film and improving film characteristics after the film is formed is required.

[0004] In particular, as a substrate having a high aspect ratio in a three-dimensional semiconductor element has emerged, in order to satisfy the specifications of step coverage, it is inevitable to use a method of lowering the deposition temperature or using a gas having a high impurity content, but the removal of impurities in the film will become more difficult.

[0005] Therefore, there is a demand for developing a substrate processing method for improving film characteristics and a substrate processing apparatus for performing the method, i.e., removing impurities present in a film without lowering the film characteristics after the film is formed on a substrate.

[0006] In addition, not only the film on the substrate, but also trace impurities remaining inside the cavity can cause contamination of the film during deposition, and thus, in order to solve the above problems, it is necessary to remove impurities and the like inside the cavity including the substrate support portion supporting the substrate.

[0007] In order to improve the above problems, the existing Korean Patent Application No. 10-2021-0045294 A discloses a substrate processing method that can reduce the incompleteness of the substrate surface and the inside of the cavity by repeatedly forming an environment of high pressure and low pressure, and further improve film characteristics.

[0008] However, when the above substrate processing method is applied to the existing substrate processing apparatus, since the volume of the processing space in which the substrate is processed is relatively large, rapid pressure change cannot be achieved, and it is impossible to perform the corresponding process repeatedly in a pressure range from 0.01 Torr of low pressure to 5 Bar level of high pressure in a short time, and thus there is a practical problem.

[0009] In order to improve this problem, the volume of the processing space of the existing substrate processing apparatus is minimized, but due to the structural limitation of a gas supply portion for supplying a processing gas to the processing space, a dead angle still remains, and such a problem occurs again.

[0010] And, the volume in the limited processing space is minimized, and the gas supply part is separately installed, and then the gas supply part is disposed adjacent to the substrate support part, so that the processing gas can be supplied from the substrate edge side. But in this way, the processing gas cannot be smoothly delivered to the substrate center side, causing the problem that uniform substrate processing cannot be performed.

[0011] In particular, in the conventional substrate processing apparatus, since the pumping flow path for exhausting the processing space is disposed between the substrate support part and the gas supply part, the processing gas cannot be supplied to the substrate center side, causing the problem.

[0012] And, the existing substrate processing apparatus has the problem that since the substrate processing is performed by repeatedly changing the pressure between high and low pressures, the sealing member that seals the processing space is easily damaged, causing the internal process gas to easily leak from the high pressure environment or the impurities from the outside to flow into the low pressure environment.

[0013] And, the existing substrate processing apparatus has the problem that since the processing space is exhausted by repeatedly changing the pressure between high and low pressures for a single production line, the external vacuum pump connected to the outside is exposed to high pressure and is damaged, causing the durability to decrease.

[0014] And, since the processing space is minimized, there is a certain difficulty in moving the substrate in and out, causing the problem of substrate transfer.

[0015] However, when the corresponding process is performed using the existing substrate processing apparatus, since the pressure in the substrate processing space is drastically changed, and then the temperature is changed. And since this temperature change cannot be actively controlled, the completion degree of the substrate processing is reduced, causing the problem.

[0016] More specifically, when the substrate is heated by the substrate support part that supports the substrate, since there is indirect contact between the processing surface of the substrate and the heater, the heat transfer efficiency is reduced, the position between the substrate support part and the lower surface of the process chamber is close, and then a certain heat loss is caused; and since the heater installed in the substrate support part has a characteristic that the substrate temperature cannot be controlled when a drastic temperature change is dealt with. SUMMARY

[0017] TECHNICAL PROBLEM

[0018] The object of the present application is to provide a substrate processing apparatus that can smoothly supply gas to the center of the substrate.

[0019] MEANS FOR SOLVING THE PROBLEM

[0020] The present application aims to solve the technical problems as described above. The present application discloses a substrate processing device, which comprises: a process cavity 100, a mounting groove 130 is formed at the center side of the bottom surface 120, and an internal space is formed; a substrate support part 200, which is inserted into the mounting groove 130 and on which a substrate 1 is arranged; an internal lead part 300, which is movable up and down in the internal space, and which is in close contact with the bottom surface 120 adjacent to the mounting groove 130 when it is lowered, thereby dividing the internal space into a sealed processing space S2 in which the substrate support part 200 is arranged and a remaining space non-processing space S1; and an internal lead driving part 600, which penetrates the upper part of the process cavity 100 and drives the up and down movement thereof; wherein the internal lead part 300 comprises: an internal lead 310, which is movable up and down in the internal space; and a gas supply flow path 320, which is arranged in the internal lead 310 and is in communication with the processing space S2.

[0021] The present application additionally comprises: a gas supply part 410, which is arranged at the lower part of the internal lead part 300, and which sprays the supplied process gas to the processing space S2 through the gas supply flow path 320.

[0022] The gas supply part 410 comprises: a spraying flat plate 412, which is arranged at the lower side of the internal lead part 300 and which is provided with a plurality of spraying holes 411.

[0023] The gas supply part 410 additionally comprises: a spraying flat plate support part 413, which supports the edge position of the spraying flat plate 412 and is combined with the bottom surface of the internal lead part 300.

[0024] The gas supply part 410 can additionally comprise: a plurality of fastening parts 414, which penetrate the spraying flat plate support part 413 and are combined with the internal lead part 300.

[0025] The spraying flat plate 412 is arranged at the lower side of the internal lead part 300, and a diffusion space S3 for process gas diffusion is formed at the position between the spraying flat plate 412 and the internal lead part 300.

[0026] The spraying flat plate 412 can be made of metal or quartz material.

[0027] The spraying flat plate support part 413 can comprise: a support step 415, which is formed as a convex structure toward the center side of the inner face, and which forms the edge part of the bottom surface of the spraying flat plate 412.

[0028] The internal lead 310 is formed with an insertion mounting groove 330, and at least a part of the gas supply part 410 is inserted into the bottom surface of the internal lead 310.

[0029] The inner surface of the insertion installation groove 330 is formed to have a slope structure that is higher toward the center from the edge.

[0030] The gas supply part 410 is inserted into the insertion installation groove 330, and the bottom surface thereof is formed to be flush with the bottom surface of the inner lead 310.

[0031] The inner lead 310 is formed to have a gas introduction groove 340 connected to the end of the gas supply flow path 320 at the center of the bottom surface.

[0032] The gas supply part 410 can further include a diffusion member inserted into the gas introduction groove 340 to diffuse the supplied process gas.

[0033] The diffusion member can have a side surface formed to have a slope structure that is higher toward the center.

[0034] The process chamber 100 can include a gas introduction flow path 190 to supply the process gas introduced from the outside to the lower surface in contact with the inner lead part 300, and the inner lead part 300 to connect the gas introduction flow path 190 and the gas supply flow path 320 by being lowered to be in close contact with the bottom surface 120, and to supply the process gas to the gas supply flow path 320.

[0035] The gas supply flow path 320 can include a vertical supply flow path 321 disposed at a position corresponding to the edge side of the inner lead 310 in the gas introduction flow path 190 and connected to the gas introduction flow path 190, and a horizontal supply flow path 322 disposed at the center side of the inner lead 310 from the vertical supply flow path 321.

[0036] The present application includes a process space pressure adjusting part 400 to communicate with the process space S2 and adjust the pressure of the process space S2, a non-process space pressure adjusting part 500 to communicate with the non-process space S1 and adjust the pressure of the non-process space S1 independently of the process space S2, and a control part to control the pressure of the process space S2 and the non-process space S1 through the process space pressure adjusting part 400 and the non-process space pressure adjusting part 500.

[0037] The processing space pressure adjusting part 400 includes a gas supply part 410 for supplying process gas to the processing space S2, and a gas exhaust part 420 for exhausting the processing space S2. The non-processing space pressure adjusting part 500 includes a non-processing space gas exhaust part 520 connected to the gas exhaust port 180 formed on one side of the process chamber 100 for exhausting the non-processing space S1, and a non-processing space gas supply part 510 connected to the gas supply port 170 formed on the other side of the process chamber 100 for supplying fill gas to the non-processing space S1.

[0038] The control part controls at least one of the processing space pressure adjusting part 400 and the non-processing space pressure adjusting part 500 to make the pressures of the processing space S2 and the non-processing space S1 approach each other before the inner lead part 300 is raised.

[0039] The control part adjusts the pressure of the processing space S2 for substrate processing and mounting the substrate 1 by the processing space pressure adjusting part 400 to be between a first pressure higher than atmospheric pressure and a second pressure lower than atmospheric pressure.

[0040] The control part adjusts the pressure of the non-processing space S1 by the non-processing space pressure adjusting part 500 to be vacuum during substrate processing.

[0041] The control part adjusts the pressure of the non-processing space S1 to be lower than the pressure of the processing space S2 by the non-processing space pressure adjusting part 500 during substrate processing.

[0042] The control part lowers the pressure of the processing space S2 from the first pressure to atmospheric pressure and then gradually lowers the pressure of the processing space S2 from atmospheric pressure to the second pressure of vacuum by the processing space pressure adjusting part 400.

[0043] The control part adjusts the pressure of the processing space S2 from the first pressure to the second pressure and then from the second pressure to the first pressure by the processing space pressure adjusting part 400, and repeats the pressure adjustment in this order.

[0044] The present application also includes a temperature adjusting part provided on the inner lead part 300 and used to adjust the temperature of the substrate 1 in the processing space S2.

[0045] The substrate support part 200 includes a substrate support plate 210 on which the substrate 1 is mounted, a substrate support column 220 penetrating the bottom of the mounting groove 130 and connected to the substrate support plate 210, and an inner heater 230 mounted inside the substrate support plate 210.

[0046] The temperature control part 1100 includes a temperature adjustment plate 1110 provided to the inner lead part 300 to heat or cool the substrate 1, and a stem part 1120 penetrating the inner lead 140 to be coupled to the temperature adjustment plate 1110.

[0047] The temperature adjustment plate 1110 can be provided to a penetration hole 350 formed at the center of the inner lead part 300 corresponding to the substrate 1.

[0048] The temperature control part 1100 further includes a buffer plate 1130 coupled to the penetration hole 350 at the lower side of the inner lead part 300 to cover the temperature adjustment plate 1110.

[0049] The temperature control part 1100 further includes a cover plate 1140 provided to cover the penetration hole 350 at the upper side of the inner lead part 300.

[0050] The temperature adjustment plate 1110 can be provided to a position corresponding to the substrate 1 at the bottom surface of the inner lead part 300.

[0051] The temperature control part 1100 can be an LED heater or a halogen heater to heat the substrate 1.

[0052] The temperature adjustment plate 1110 can be inserted into an insertion groove 360 formed at the center of the upper surface of the inner lead part 300 corresponding to the substrate 1.

[0053] The temperature adjustment plate 1110 can include at least two temperature adjustment areas distinguished from each other in a plane and independently adjusted in temperature.

[0054] The temperature adjustment areas can include a first temperature adjustment area 1111 sharing a center with the circular temperature adjustment plate 1110 in a plane and divided into a circle in a plane at a position corresponding to the center of the substrate 1, a temperature adjustment area 1113 divided at a position of an edge of the temperature adjustment plate 1110, and a second temperature adjustment area 1112 divided between the first temperature adjustment area 1111 and the third temperature adjustment area 1113.

[0055] The temperature control part 1100 can further include a temperature control part to control heating or cooling, the temperature control part controlling the temperature such that the temperature of the third temperature adjustment area 1113 is higher than that of the first temperature adjustment area 1111.

[0056] The temperature adjustment unit 1100 can further include a temperature control unit capable of controlling heating or cooling, which maintains the temperature of the substrate 1 or the processing space S2 constant during the pressure change of the processing space S2 by the temperature adjustment unit 1100.

[0057] The substrate processing method of the present application further includes a cleaning step of supplying a process gas to the processing space S2 through one side thereof and exhausting the process gas through the other side thereof in a state where the inner lead unit 300 is raised before the substrate 1 is introduced into the inner space through the substrate introduction step S100.

[0058] The substrate processing method of the present application further includes a processing space release step S400 of releasing the sealed processing space S2 by raising the inner lead unit 300 after the substrate processing step S300 is completed, and a substrate removal step S500 of removing the substrate 1, on which the substrate processing is completed, from the inner space to the outside through the gate 111 by the transfer robot provided outside.

[0059] The substrate introduction step S100, the processing space formation step S200, the substrate processing step S300, the processing space release step S400, and the substrate removal step S500 can be sequentially repeated.

[0060] The substrate processing method of the present application further includes a cleaning step of supplying a process gas to the processing space S2 through one side thereof and exhausting the process gas through the other side thereof in a state where the inner lead unit 300 is raised before the substrate 1 is introduced into the inner space through the substrate introduction step S100.

[0061] The substrate processing step S300 can include a pressure increasing step S310 of increasing the pressure of the processing space S2 to a first pressure higher than the atmospheric pressure, and a pressure decreasing step S320 of decreasing the pressure of the processing space S2 from the first pressure to a second pressure.

[0062] At this time, the second pressure can be a pressure lower than the normal pressure.

[0063] The pressure decreasing step S320 can include a first pressure decreasing step S321 of decreasing the pressure of the processing space S2 from the first pressure to the normal pressure, and a second pressure decreasing step S322 of decreasing the pressure of the processing space S2 from the normal pressure to the second pressure lower than the normal pressure.

[0064] The substrate processing step S300 can maintain the pressure of the non-processing space S1 constant at the vacuum pressure lower than the normal pressure.

[0065] The processing space releasing step S400 can include a pressure adjusting step S410 of adjusting at least one of the pressures of the non-processing space S1 and the processing space S2 to a level lower than a preset level to adjust the pressure difference between the non-processing space S1 and the processing space S2, and an inner lead portion raising step S420 of releasing the processing space S2 by raising the inner lead portion 300.

[0066] The pressure adjusting step S410 adjusts the pressures of the non-processing space S1 and the processing space S2 to the same pressure.

[0067] The process chamber 100 further includes a gate opening / closing valve 150 that can open and close the gate 111, and a gate closing step of closing the gate 111 by the gate valve 150 after the processing space forming step S200 to seal the inner space.

[0068] Effects of the Invention

[0069] The substrate processing apparatus of the present application has an advantage in that the volume of the substrate processing space inside the chamber is minimized to increase the pressure change speed in a wide pressure range, thereby completing the pressure conversion of the rapid pressure change of 1 Bar / s from the low pressure of 0.01 Torr to the high pressure of 5 Bar.

[0070] Also, the substrate processing apparatus of the present application has an advantage in that, when the process gas is injected from the upper side of the substrate support portion, the gas supply portion is omitted to be separately provided at the adjacent position of the substrate support portion, thereby minimizing the volume of the dead angle.

[0071] Also, the substrate processing apparatus of the present application has an advantage in that, since the process gas is injected to the substrate from the upper side of the substrate support portion, the process gas can be smoothly supplied not only to the edge side of the substrate but also to the center side, thereby realizing the uniform substrate processing.

[0072] Furthermore, the advantage of the substrate processing apparatus of the present invention is that a buffer space for non-processing space is set between the processing space and the external space of the process chamber, thereby preventing harmful substances such as processing gases in the processing space from leaking to the outside of the process chamber, thus improving the safety of substrate processing.

[0073] Furthermore, the advantage of the substrate processing apparatus of the present invention is that a non-processing space is provided between the processing space and the external space of the process chamber, and by controlling the pressure of the non-processing space, impurities and the like are prevented from flowing into the processing space, thereby improving the quality of substrate processing.

[0074] Furthermore, the advantage of the substrate processing apparatus of the present invention is that by performing binary processing on the exhaust of the processing space according to the pressure, the exhaust efficiency of the processing space is improved, thereby further improving the durability of the apparatus structure.

[0075] Furthermore, the substrate processing apparatus of the present invention has the advantage that it can minimize the volume of the processing space for processing substrates inside the processing cavity, while at the same time it can easily introduce and remove substrates into and out of the cavity.

[0076] The substrate processing apparatus of the present invention has the advantage that by minimizing the volume of the processing space of the substrate, the pressure conversion speed over a wider pressure range can be improved, and precise temperature control can be performed in response to temperature changes of the substrate.

[0077] In particular, another advantage of the substrate processing apparatus of the present invention is that, even if the temperature changes caused by the rapid pressure change of the pressurization and depressurization, the temperature of the substrate can be kept stable by adjusting the temperature of the substrate, thereby increasing the process effect and forming a uniform film.

[0078] Furthermore, the substrate processing apparatus of the present invention has the following advantages: since heating or cooling is performed directly on the upper side of the substrate processing surface, temperature compensation is fast, thus enabling rapid and precise temperature control. Attached Figure Description

[0079] Figure 1 This is a cross-sectional view illustrating the external structure of the substrate processing apparatus of the present invention.

[0080] Figure 2 The diagram is based on Figure 1 Cross-sectional view of the internal lead section in the rising state.

[0081] Figure 3 The diagram is based on Figure 2 An enlarged cross-sectional view of part A of the substrate processing apparatus.

[0082] Figure 4 The diagram is based on Figure 1An enlarged sectional view of a gas injection portion structure of a substrate processing apparatus.

[0083] Figure 5 is a sectional view illustrating another embodiment of a substrate processing apparatus based on the present invention.

[0084] Figure 6 is a sectional view illustrating another embodiment of a substrate processing apparatus based on the present invention. Figure 1 is a graph illustrating respective pressure changes of a processing space and a non-processing space performed based on the substrate processing apparatus.

[0085] Figure 7 is a graph illustrating respective pressure changes of a processing space and a non-processing space performed based on the substrate processing apparatus. Figure 1 is a sectional view of a temperature adjustment portion structure.

[0086] Figure 8 is a sectional view illustrating another embodiment of a temperature adjustment portion based on the present invention. Figure 1

[0087] Figure 9 is a sectional view illustrating another embodiment of a temperature adjustment portion based on the present invention. Figure 1 is a bottom view illustrating a structure of a temperature adjustment region distinguished by a temperature adjustment portion of a substrate processing apparatus.

[0088] Figure 10 is a flowchart illustrating a substrate processing method using a substrate processing apparatus based on the present invention. Figure 1 is a flowchart illustrating a substrate processing method using a substrate processing apparatus based on the present invention.

[0089] Figure 11 is a flowchart illustrating a substrate processing method using a substrate processing apparatus based on the present invention. Figure 10 is a flowchart illustrating a substrate processing method using a substrate processing apparatus based on the present invention.

[0090] Figure 12 is a flowchart illustrating a substrate processing method using a substrate processing apparatus based on the present invention. Figure 10 is a flowchart illustrating a substrate processing method using a substrate processing apparatus based on the present invention.

[0091] (Explanation of Reference Numerals)

[0092] 100: process chamber

[0093] 200: substrate support portion 300: internal lead portion

[0094] 400: processing space pressure adjustment portion 500: non-processing space pressure adjustment portion

[0095] 600: internal lead driving portion 700: filling member

[0096] 800: substrate support pin portion 900: sealing portion

[0097] 1000: manifold portion 1100: temperature adjustment portion DETAILED DESCRIPTION

[0098] ​The substrate processing apparatus of the present invention will now be described in detail with reference to the accompanying drawings.

[0099] The substrate processing apparatus of the present invention, such as Figure 1 As shown, it includes: a cavity body 110, which is open at the top and has a mounting groove 130 formed at the center of the bottom surface 120, and a gate 111 for introducing the substrate 1 is formed on one side; a process cavity 100, which is attached to the upper part of the cavity body 110 and includes and forms a top lead 140 for a non-processing space S1; a substrate support 200, which is inserted into the mounting groove 130 and has the substrate 1 mounted on it; an internal lead 300, which is disposed in the internal space and can move up and down. By moving downward, a part of it is in close contact with the bottom surface 120 adjacent to the mounting groove 130, forming a closed processing space S2 inside the substrate support 200; and an internal lead drive 600, which is disposed through the upper part of the process cavity 100 and drives the internal lead 300 to move up and down.

[0100] Furthermore, the substrate processing apparatus of the present invention includes: a processing space pressure adjustment unit 400, which is connected to the processing space S2 and adjusts the pressure of the processing space S2; and a non-processing space pressure adjustment unit 500, which is connected to the non-processing space S1 and can adjust the pressure of the non-processing space S1 independently of the processing space S2.

[0101] Furthermore, the substrate processing apparatus of the present invention may further include a control unit, which uses a processing space pressure regulating unit 400 and a non-processing space pressure regulating unit 500 to control the pressure of the processing space S2 and the non-processing space S1.

[0102] Furthermore, the substrate processing apparatus of the present invention may include a filling member 700, which is installed between the inner surfaces of the substrate support portion 200 and the mounting groove 130, and occupies at least a portion of the space between the inner surfaces of the substrate support portion 200 and the mounting groove 130.

[0103] Furthermore, the substrate processing apparatus of the present invention may further include: a substrate support pin 800, which supports the substrate 1 that is introduced and moved out of the process cavity 100 and is disposed on the substrate support 200.

[0104] Furthermore, the substrate processing apparatus of the present invention includes a temperature adjustment unit 1100 disposed in the internal lead unit 300, which adjusts the temperature of the substrate 1 located in the processing space S2.

[0105] Here, the substrate 1 that is the object of processing can be understood as all substrate devices, including substrates used in display devices such as LCD, LED, and OLED, semiconductor substrates, solar cell substrates, and glass substrates.

[0106] The process chamber 100 can have various structural configurations as a structure forming an internal space inside.

[0107] For example, the process chamber 100 can include a chamber body 110 having an open top, and a top lead 140 covering the opening of the top of the chamber body 110 and forming a closed non-processing space S1 together with the chamber body 110.

[0108] Also, the process chamber 100 can include a bottom surface 120 forming the bottom of the internal space, and a mounting groove 130 provided on the bottom surface 120 and providing a substrate support part 200.

[0109] Also, the process chamber 100 can further include a gate valve 150 for opening and closing a gate 111 formed on one side of the chamber body 110 to introduce the substrate 1.

[0110] Also, the process chamber 100 can additionally include a support pin mounting groove 160 provided on the lower surface in order to smoothly mount a substrate support ring 820 in the substrate support part 800 to be described later.

[0111] Also, the process chamber 100 can include a gas introduction flow path 190 for supplying the introduced gas from the outside to the lower surface in contact with the internal lead part 300.

[0112] Also, the process chamber 100 can further include a gas supply port 170 connected to a non-processing space gas supply part 510 to be described later on one side and supplying a fill gas to the non-processing space S1.

[0113] Also, the process chamber 100 can further include an exhaust port 180 connected to a non-processing space exhaust part to be described later on the other side to exhaust the non-processing space S1.

[0114] The chamber body 110 is open at the top and forms a closed non-processing space S1 inside together with the top lead 140 to be described later.

[0115] At this time, the chamber body 110 can be made of a metal material including aluminum, and in another example, can be made of a quartz material and is provided in a straight hexagonal shape similar to the chamber disclosed in the related art.

[0116] The top lead 140 is coupled to the upper side of the chamber body 110 which is open at the top and can form a closed non-processing space S1 inside together with the chamber body 110 in structure.

[0117] At this time, the top lead 140 can form a planar rectangular shape corresponding to the shape of the cavity body 110, and can be composed of the same material as the cavity body 110.

[0118] Also, the top lead 140 can be formed with a plurality of through-holes for allowing the internal lead driving portion 600 to be disposed therethrough, and its bottom surface can be combined with the end portion of the first bellows 630, thus preventing various gases and foreign substances from leaking to the outside.

[0119] In addition, it is also possible to omit the structure of the top lead 140 and to provide the cavity body 110 in an integrated structure in which the inside thereof forms a closed non-processing space S1.

[0120] The process cavity 100 can include a bottom surface 120 of a bottom plate forming the non-processing space S1 on the inner lower surface, and a mounting groove 130 formed on the bottom surface 120 and provided with the substrate support portion 200.

[0121] More specifically, as shown in Figure 1 the process cavity 100 forms a stepped structure corresponding to the substrate support portion 200 on the center side of the lower surface, and forms the mounting groove 130, and the bottom surface 120 is formed at the edge position of the mounting groove 130.

[0122] That is, the process cavity 100 forms the mounting groove 130 for providing the substrate support portion 200 on the inner lower surface, and has a stepped structure, and the other portion can be defined as the bottom surface 120, which has a height higher than that of the mounting groove 130.

[0123] The gate valve 150 is for opening and closing the gate 111 formed on one side of the cavity body 110, and as having such a structure that the substrate 1 can be introduced, can have various structural forms.

[0124] At this time, the gate valve 150 completes close contact or release with the cavity body 110 by up-down driving and forward-backward driving, thus closing or opening the gate 111. As another example, the gate 111 can be opened or closed by a single driving method in a diagonal direction, and in this process, various forms of driving methods disclosed in the related art such as a cylinder, a cam, an electronic device, etc. can be applied.

[0125] The support pin mounting groove 160 is a structure for supporting the substrate 1 and provided in the substrate support portion 200, or is a structure for being divided upward from the substrate support portion 200 to support the substrate 1, and as a structure for providing the substrate support pin portion 800 for introducing and moving out the substrate 1, can have various structural forms.

[0126] For example, the support pin installation groove 160 can be formed as a flat swivel ring-shaped groove corresponding to the substrate support ring 820, for positioning the substrate support ring 820 described later.

[0127] At this time, the support pin installation groove 160 can be provided on the lower surface of the process chamber 100, corresponding to the position where the substrate support ring 820 is installed, and more specifically, can be provided on the installation groove 130.

[0128] That is, the support pin installation groove 160 can be provided on the installation groove 130 formed in a stepped structure from the bottom surface 120, and have a certain depth in a state of being positioned with the substrate support ring 820, so as to be able to move up and down.

[0129] Thus, the support pin installation groove 160 is provided with the substrate support ring 820, and the plurality of substrate support pins 810 penetrate the filling member 700 and the substrate support plate 210 upward.

[0130] In addition, the support pin installation groove 160 is formed in the installation groove 130 and has a certain volume, so that the process space S2 volume formed by the internal lead portion 300 described later is increased, and there is a problem.

[0131] In order to improve the above problem, by installing the filling member 700 described later in the installation groove 130, while covering the support pin installation groove 160, it is possible to block the space formed between the process space S2 and the support pin installation groove 160, and to reduce the volume of the process space S2 to a minimum.

[0132] More specifically, when the support pin installation groove 160 is not present, it is necessary to separately provide a space for the substrate support pins 810 and the substrate support ring 820 below the substrate support plate 210, so that the dead angle is increased. In order to eliminate the dead angle, the support pin installation groove 160 can be provided, so that the substrate support pins 810 and the substrate support ring 820 can be inserted into the inside when lowered.

[0133] In addition, unlike the above, the support pin installation groove 160 is not provided on the bottom surface 120 of the process chamber 100, but can be provided on the filling member 700 provided in the installation groove 130.

[0134] That is, the support pin installation groove 160 has a certain depth on the upper surface of the filling member 700, and more specifically, has a depth corresponding to the embedding depth of the substrate support ring 820 and the substrate support pins 810, and in a state of being embedded in the filling member 700, can be raised to support the substrate 1.

[0135] In addition, at this time, the substrate support pins 810 can be provided penetrating the filling member 700.

[0136] The gas supply port 170 can be formed on one side of the chamber body 110 and connected to the non-process space gas supply part 510.

[0137] For example, the gas supply port 170 can be formed on one side of the chamber body 110 by machining, or formed on a through hole formed on one side of the chamber body 110.

[0138] Accordingly, the gas supply port 170 can be connected to the non-process space S1 and the non-process space gas supply part 510, and thus can supply the fill gas to the non-process space S1.

[0139] The gas exhaust port 180 can be formed on the other side of the chamber body 110 and connected to the non-process space gas exhaust part 520.

[0140] For example, the gas exhaust port 180 can be formed on the other side of the chamber body 110 by machining, or formed on a through hole formed on the other side of the chamber body 110.

[0141] Accordingly, the gas exhaust port 180 can perform the gas exhaust of the non-process space S1 by installing the non-process space gas exhaust part 520.

[0142] The gas introduction flow path 190 can have various structures, as a structure formed on the lower surface of the process chamber 100 to supply the process gas introduced from the outside to a position in contact with the inner lead part 300.

[0143] For example, the gas introduction flow path 190 can be formed by penetrating the lower surface or the side surface of the chamber body 110 and connected to the process gas storage part outside, and the inner lead part 300 in the lower surface can be formed at the end at a position corresponding to the gas supply flow path 320 described later.

[0144] When the gas introduction flow path 190 is in close contact with the bottom surface 120 after descending from the inner lead part 300, it can be connected to the gas supply flow path 320, and thus the process gas can be supplied to the gas supply flow path 320.

[0145] In addition, the gas introduction flow path 190 in the above case can be formed by a pipe installed on the lower surface of the process chamber 100, and as another example, can be formed inside the chamber body 110 by machining.

[0146] Also, the gas introduction flow path 190 can be formed at at least one of positions adjacent to the edge of the substrate 1 corresponding to the gas supply flow path 320 described later in the lower surface of the process chamber 100.

[0147] The substrate support part 200 is provided in the process chamber 100 and serves to support the substrate 1 on the upper surface. The substrate support part 200 can have various structures.

[0148] The substrate support part 200 supports the substrate 1 on the upper surface and fixes the substrate 1 during the substrate processing.

[0149] The substrate support part 200 can form a temperature environment for the processing space S2 for the substrate processing by providing a heater inside.

[0150] For example, the substrate support part 200 can include a substrate support plate 210 on which the substrate 1 is provided, a substrate support column 220 which penetrates the bottom of the mounting groove 130 and is connected to the substrate support plate 210, and an internal heater 230 provided inside the substrate support plate 210.

[0151] The substrate support plate 210 can have a flat circular plate structure corresponding to the shape of the substrate 1.

[0152] The substrate support plate 210 can be provided with a heater inside to form a process temperature of about 400 to 700°C for processing the substrate on the processing space S2.

[0153] The substrate support column 220 can have various structures as a structure which penetrates the lower surface of the process chamber 100 and is connected to the substrate support plate 210.

[0154] The substrate support column 220 can be provided with various wires for supplying power to the heater inside.

[0155] In addition, the substrate processing apparatus according to the present application is configured to repeatedly change the high pressure and low pressure pressure environments in a short time to complete the substrate processing, and more specifically, to repeatedly change the pressure range from 5 Bar to 0.01 Torr at a pressure change speed of 1 Bar / s. Figure 2

[0156] However, considering the large internal space volume of the chamber body 110, it is impossible to achieve the above-mentioned pressure change speed, and thus it is necessary to reduce the volume of the processing space S2 for the substrate processing to the minimum.

[0157] ​Therefore, the substrate processing apparatus of the present invention includes: an internal lead portion 300, which is disposed in the internal space and can move up and down, and moves down to make close contact with a portion of the process cavity 100 so that the substrate support portion 200 forms a closed processing space S2 inside.

[0158] The aforementioned internal lead portion 300 is disposed in the internal space and can move up and down. By moving a portion of it downwards, it can be in close contact with the process cavity 100, and can be a structure in which the substrate support portion 200 forms a closed processing space S2 inside.

[0159] That is, the aforementioned internal lead portion 300 is provided in the internal space and can move up and down. By moving a part of it downward, it can be closely attached to the bottom surface 120 adjacent to the mounting groove 130. The internal space can be divided into a closed processing space S2 where the substrate support portion 200 is located, and a non-processing space S1.

[0160] Therefore, the aforementioned internal lead portion 300 can be disposed on the upper side of the substrate support portion 200 inside, and can move up and down. By moving downward, it can make close contact with at least a portion of the internal surface of the process cavity 100, thereby forming a closed processing space S2 between it and the lower inner surface of the process cavity 100 as needed.

[0161] Therefore, the substrate support 200 is located within the processing space S2, and substrate processing of the substrate 1 mounted on the substrate support 200 can be performed within the minimized processing space S2.

[0162] For example, after the internal lead portion 300 descends, its edge position is in close contact with the bottom surface 120, thereby forming a closed processing space S2 between the bottom surface and the inner lower surface of the process cavity 100.

[0163] In addition, as another example, it is certainly possible to form a sealed processing space S2 by lowering the internal lead portion 300 so that its edge is in close contact with the inner side of the process cavity 100.

[0164] In the aforementioned internal lead portion 300, its edge descends and comes into close contact with the bottom surface 120 to form a sealed processing space S2, and the substrate support portion 200 installed in the mounting groove 130 can be disposed within the processing space S2.

[0165] That is, the aforementioned internal lead section 300 Figure 2 As shown, after the downward movement, its edge is in close contact with the bottom surface 120, which forms a stepped structure with the mounting groove 130 and is located at a higher position. In this way, a closed processing space S2 can be formed between the bottom surface and the mounting groove 130.

[0166] At this time, the substrate support part 200 is installed in the installation groove 130, and more specifically, the volume of the process space S2 is minimized by installing the substrate support plate 210 and the filling member 700, and the substrate 1 is positioned on the upper surface.

[0167] In this process, in order to minimize the volume of the process space S2, the installation groove 130 is formed in a shape corresponding to the shape of the substrate support part 200 in which the process space S2 is installed. More specifically, the groove structure can be formed in a cylindrical shape corresponding to the circular substrate support plate 210.

[0168] That is, in the installation space formed by the installation groove 130, in order to minimize the remaining space other than the space in which the substrate support plate 210 and the filling member 700 are installed, the shape corresponding to the shape of the substrate support plate 210 can be formed.

[0169] In this process, in order to prevent interference between the substrate 1 installed on the upper surface of the substrate support plate 210 and the internal lead part 300, the installation height of the bottom surface 120 is higher than the height of the upper surface of the substrate 1 installed on the substrate support plate 200.

[0170] In addition, as the gap between the substrate 1 installed on the substrate support part 200 and the bottom surface of the internal lead part 300 is wider, it means that the volume of the process space S2 is larger. Therefore, while preventing interference between the substrate 1 and the internal lead part 300, the height of the bottom surface 120 can be installed at a position at which the gap between them is minimized.

[0171] The internal lead part 300 described above can have various structures as a structure that moves up and down by the internal lead driving part 600.

[0172] The internal lead part 300 described above can be a structure that moves up and down in the internal space by the internal lead driving part 600.

[0173] At this time, the internal lead part 300 described above can cover the installation groove 130 on the plane, and the edge part thereof can be formed in a size corresponding to a portion of the bottom surface 120, and after the edge part is in close contact with the bottom surface 120, the process space S2 can be formed in a sealed state at a position between the installation groove 130.

[0174] In addition, as another example, the internal lead part 300 described above can be in close contact with the inner side surface of the process chamber 100 to form the process space S2, and such a method is of course possible.

[0175] In addition, in order to effectively maintain the process temperature within the closed process space S2 formed by moving upward and downward, the internal lead portion 300 can be made of a material having excellent thermal insulation, thereby preventing the temperature of the process space S2 from being lost to other structures such as the internal space.

[0176] In addition, the internal lead portion 300 can be provided with a gas supply flow path 320 inside, in order to supply the process gas received from the gas introduction flow path 190 to the gas supply portion 410 described later.

[0177] For example, the internal lead portion 300 can include an internal lead 310 that is movable upward and downward in the internal space, and a gas supply flow path 320 provided inside the internal lead 310, which is in communication with the internal process space S2.

[0178] In addition, the internal lead 310 can form an insertion installation groove 330 having the gas supply portion 410 described later inserted and provided at the bottom surface thereof.

[0179] In addition, the internal lead 310 can form a gas introduction groove 340 connected to the end of the gas supply flow path 320 at the center of the bottom portion thereof.

[0180] The internal lead 310, which is movable upward and downward in the internal space, has a size and shape corresponding to the size and shape of the installation groove 130 of the process chamber 100.

[0181] For example, the internal lead 310 can have a circular flat plate shape, and can have a planar shape corresponding to the substrate 1.

[0182] The gas supply flow path 320, which is provided inside the internal lead 310 and is in communication with the process space S2, can have various structural forms.

[0183] At this time, the gas supply flow path 320 can be formed by a pipe provided inside the internal lead 310, like the gas introduction flow path 190, and can be formed by processing the inside of the internal lead 310, as another example.

[0184] In addition, the gas supply flow path 320 is in close contact with the bottom surface 120 after the internal lead 310 is lowered, and is connected to the gas introduction flow path 190, receives the process gas through the gas introduction flow path 190, and supplies the process gas to the gas supply portion 410 through the gas introduction groove 340 described later.

[0185] To this end, the gas supply flow path 320 can include a vertical supply flow path 321 provided at a position corresponding to the gas introduction flow path 190 at the edge side of the inner lead 310 and connected to the gas introduction flow path 190, and a horizontal supply flow path 322 provided at the vertical supply flow path 321 to the center side of the inner lead 310.

[0186] That is, the vertical supply flow path 321 is provided at a position corresponding to the plane of the gas introduction flow path 190 at the edge side of the inner lead 310, and after receiving the process gas from the gas introduction flow path 190, the process gas is delivered to the gas introduction groove 340 through the horizontal supply flow path 322 extending from the vertical supply flow path 321 and provided along the center side of the inner lead 310.

[0187] In this case, the process gas is received from the gas introduction flow path 190 through the vertical supply flow path 321, and in order to minimize gas leakage from the contact surface of the inner lead part 300 and the process chamber 100, the inner diameter of the vertical supply flow path 321 can be greater than or equal to the inner diameter of the gas introduction flow path 190.

[0188] The insertion installation groove 330 can be configured such that at least a portion of the gas supply part 410 described below is inserted into the bottom surface of the inner lead 310.

[0189] To this end, the insertion installation groove 330 can be formed in a shape corresponding to the gas supply part 410 on the bottom surface of the inner lead 310, and the gas introduction groove 340 can be additionally provided at the center side.

[0190] At this time, the insertion installation groove 330 forms a diffusion space S3 between the gas supply part 410 described below, and in order to increase the volume of the diffusion space S3 and smoothly diffuse the process gas supplied through the gas introduction groove 340 in the horizontal direction, the inner surface can be formed in a structure that is increasingly inclined from the edge position to the center side.

[0191] That is, the inner surface of the insertion installation groove 330 can be formed in a triangular pyramid structure, and the radius of the edge position side in the downward direction can be greater, and the structure can be formed to be inclined.

[0192] The gas introduction groove 340, which is connected to the end of the gas supply flow path 320 at the center side of the bottom surface, can be configured to spray the process gas into the diffusion space S3.

[0193] At this time, the gas introduction groove 340, which is vertically provided in the inner surface, can supply the process gas. As another example, the diameter can be increasingly large downward to form an inclined structure, which can guide the supplied process gas to be diffused in the horizontal direction, i.e., to the edge position side, and to be supplied.

[0194] Also, as Figures 6 to 8The above-mentioned internal lead part 300 shown can be configured to have a temperature adjustment part 1100 described later.

[0195] At this time, the above-mentioned internal lead part 300 can have a through-hole 350 formed at the center side so as to mount the temperature adjustment part 1100 described later, and in particular, to mount the temperature adjustment plate 1110 and the buffer plate 1130, and the temperature adjustment plate 1110 can be mounted at the upper through-hole 350.

[0196] More specifically, the through-hole 350 is provided at the position where the substrate 1 of the above-mentioned internal lead part 310 and the substrate support flat plate 210 face each other, and further, the temperature adjustment plate 1110 is provided.

[0197] At this time, in order to support the temperature adjustment plate 1110, a support step 370 can be provided at the upper side of the through-hole 350 in the radial direction of the internal lead 310, and by supporting the end of the above-mentioned temperature adjustment plate 1110 with the above-mentioned support step 370, the temperature adjustment plate 1110 can be stably supported and provided at the through-hole 350.

[0198] At this time, in order to support the temperature adjustment plate 1110, a support step 370 can be provided at the upper side of the through-hole 350 in the radial direction of the internal lead 310, and by supporting the end of the above-mentioned temperature adjustment plate 1110 with the above-mentioned support step 370, the temperature adjustment plate 1110 can be stably supported and provided at the through-hole 350.

[0199] In addition, as another example, as shown in Figure 8 The above-mentioned internal lead part 300 shown can have an insertion groove 360 formed at the upper surface so as to insert and provide the temperature adjustment plate 1110 described later inside.

[0200] That is, the above-mentioned internal lead 310 is different from the foregoing, as shown in Figure 8 The temperature adjustment plate 1110 can be inserted and provided inside, and at this time, the insertion groove 360 can be provided at the position opposite to the substrate 1 and the substrate support part 200, that is, at the center side of the internal lead 310.

[0201] In addition, as described above in this case, of course, a support step 370 can be provided at the upper side of the insertion groove 360 in the radial direction of the internal lead 310, so as to support the temperature adjustment plate 1110 inserted and provided in the insertion groove 360.

[0202] Still further, at this time, the internal lead 310 can be composed of a transparent material, so that the heat supplied through the temperature adjustment plate 1110 at the lower portion 390 of the insertion groove 360, or the heat supplied from the substrate 1 and the processing space S2 to the temperature adjustment plate 1110 can be more easily conducted.

[0203] That is, the inner lead 310 must exchange heat with the substrate 1 and the processing space S2 through the lower side portion 390 of the insertion slot 360. In consideration of the fact that the heat supply method of the temperature adjustment plate 1110 to be described later is by means of an LED heater or a halogen heater, the lower side portion 390 can be configured in part of a structure of a transparent material that is easy to conduct heat when it is provided.

[0204] The processing space pressure adjustment portion 400 communicates with the processing space S2, and as a structure for adjusting the pressure of the processing space S2, can have various structural forms.

[0205] For example, the processing space pressure adjustment portion 400 can include a gas supply portion 410 that supplies a process gas to the processing space S2, and an exhaust portion 420 that exhausts the processing space S2.

[0206] The processing space pressure adjustment portion 400 can adjust the pressure of the processing space S2 by supplying a process gas to the processing space S2 and appropriately exhausting the processing space S2. As shown in FIG. 6, this can create an environment in which the pressure is repeatedly changed between high pressure and low pressure in a short time. Figure 6

[0207] At this time, more specifically, the pressure of the processing space S2 can be repeatedly rapidly changed at a level of 1 Bar / s between a pressure range of 5 Bar to 0.01 Torr.

[0208] In particular, the processing space pressure adjustment portion 400 can lower the pressure of the processing space S2 from a first pressure to atmospheric pressure, and can lower the pressure of the processing space S2 from the atmospheric pressure to a second pressure that is a vacuum in stages.

[0209] In addition, the processing space pressure adjustment portion 400 can convert the pressure of the processing space S2 from the first pressure to the second pressure and then to the first pressure, and repeatedly change the pressure in this order several times in order to perform processing of the substrate.

[0210] The gas supply portion 410, as a structure provided at the lower portion of the inner lead portion 300 and spraying a process gas transmitted through the gas supply flow path 320 to the processing space S2, can have various structural forms.

[0211] For example, the gas supply portion 410 includes a spray flat plate 412 provided at the lower side of the inner lead portion 300 and having a plurality of spray holes 411, and a spray flat plate support portion 413 that supports the edges of the spray flat plate 412 and is connected to the bottom of the inner lead portion 300.

[0212] ​Furthermore, the gas supply unit 410 may additionally include a plurality of fastening components 414 that penetrate the injection plate support unit 413 and are combined with the internal lead wire unit 300.

[0213] The aforementioned injection plate 412 is disposed on the lower side of the internal lead section 300, and can inject process gas into the processing space S2 through multiple injection holes 411.

[0214] At this time, the aforementioned spray plate 412 is disposed at a preset interval in the aforementioned internal lead portion 300, thereby forming a diffusion space S3 in which process gas diffuses between the internal lead portion 300 and the internal lead portion 300.

[0215] In addition, the aforementioned spray plate 412 can be made of metal or quartz material, which in particular can prevent the heat generated from the substrate support 200 from being directly transferred to the internal lead portion 300, thus preventing the internal lead portion 300 from bending or being damaged due to thermal stress.

[0216] Therefore, the aforementioned spray plate 412 can be made of SUS or quartz material with excellent thermal insulation properties, and the bottom surface can be reinforced with thermal insulation properties or subjected to heat-reflective surface treatment.

[0217] The aforementioned injection holes 411 penetrate the aforementioned injection plate 412 in the vertical direction, and multiple holes are formed over the entire area, so that the process gas can be injected uniformly.

[0218] The aforementioned jet plate support 413, as a structure supporting the aforementioned jet plate 412, can have various structural forms.

[0219] For example, the aforementioned spray plate support 413 can be configured as an annular shape to wrap around the edge of the circular spray plate 412, and the installation of the spray plate 412 can be guided by supporting the edge position of the spray plate 412.

[0220] To this end, the aforementioned spray plate support portion 413 protrudes inward to the center side to form a support step portion 415, which forms the bottom edge position of the spray plate 412. This can prevent direct contact between the spray plate 412 and the internal lead portion 300, buffer the thermal deformation of the spray plate 412, and thus prevent direct heating of the internal lead portion 300.

[0221] In addition, such as Figure 4 The above-described jet plate support 413 is provided by a plurality of fastening members 414, which are fastened to the bottom of the internal lead wire 310, thereby supporting the jet plate 412.

[0222] In this case, the gas supply part 410 can be inserted into the insertion installation groove 330, and the bottom surface, i.e., the bottom of the injection flat plate 412 and the injection flat plate support part 413 can form a flat structure with the bottom of the inner lead 310 in a state of being inserted into the insertion installation groove 330.

[0223] In addition, the gas supply part 410 can be additionally provided with a diffusion part (not shown) inserted into the gas introduction groove 340 to diffuse the supplied process gas in the horizontal direction.

[0224] At this time, the diffusion part forms a structure in which the height is not increased along the center in a conical or conical frustum shape in which the inclined surface is formed in the positive direction on the side surface, and diffuses the supplied process gas in the horizontal direction of the edge side through the gas introduction groove 340.

[0225] For this, the diffusion part can be supported at the bottom of the inner lead 310, and as another example, can be installed at the upper position of the injection flat plate 412.

[0226] The gas exhaust part 420 is a structure for performing gas exhaust with respect to the processing space S2, and can have various structural forms.

[0227] For example, the gas exhaust part 420 is in communication with the processing space S2, and includes an external gas exhaust device provided at the outside, thereby controlling the amount of gas exhaust with respect to the processing space S2, and further adjusting the pressure of the processing space S2.

[0228] The non-processing space pressure adjustment part 500 is in communication with the non-processing space S1, and as a structure for adjusting the pressure of the non-processing space S1 independently of the processing space S2, can have various structural forms.

[0229] In particular, the non-processing space pressure adjustment part 500 can independently adjust the pressure of the non-processing space S1 formed to be separated from the processing space S2, independently of the processing space S2.

[0230] For example, the non-processing space pressure adjustment part 500 is in communication with the non-processing space S1, and can include a non-processing space gas supply part 510 for supplying a fill gas to the non-processing space S1, and a non-processing space gas exhaust part 520 for performing gas exhaust with respect to the non-processing space S1.

[0231] The non-processing space gas supply part 510 is connected to the gas supply port 170, and can supply a fill gas to the non-processing space S1, thereby adjusting the pressure of the non-processing space S1.

[0232] The non-processing space gas exhaust part 520 is connected to the gas exhaust port 180, and as a structure for performing gas exhaust with respect to the non-processing space S1, can adjust the pressure of the non-processing space S1.

[0233] In addition, the non-processing space gas supply portion 510 and the non-processing space gas exhaust portion 520 can be any structure as long as they perform the structure disclosed in the prior art for supplying and exhausting the fill gas.

[0234] In addition, the non-processing space pressure adjusting portion 500 and the processing space pressure adjusting portion 400 can be connected by sharing the same external exhaust device, and as another example, can be connected to independent external exhaust devices to perform exhaust, and such a configuration is of course possible.

[0235] In addition, the non-processing space pressure adjusting portion 500 and the processing space pressure adjusting portion 400 can be connected by sharing the same external vacuum pump, and as another example, can be connected to independent external vacuum pumps to perform pumping, and such a configuration is of course possible.

[0236] The non-processing space pressure adjusting portion 500 changes the pressure of the processing space S2 in which the substrate 1 is disposed from the first pressure higher than the atmospheric pressure to the second pressure, and in this process, the pressure of the non-processing space S1 can be maintained constant.

[0237] At this time, the non-processing space pressure adjusting portion 500 can maintain the pressure of the non-processing space S1 in a vacuum state during the substrate processing, and in this process, the pressure thereof can be maintained lower than or equal to the pressure of the processing space S2.

[0238] That is, the non-processing space pressure adjusting portion 500 can maintain the pressure of the non-processing space S1 at the constant second pressure, i.e., 0.01 Torr, during the substrate processing, and in this process, the pressure thereof can be maintained lower than or equal to the pressure of the processing space S2, thereby preventing the foreign matter such as impurities of the non-processing space S1 from flowing into the processing space S2.

[0239] In addition, as another example, the non-processing space pressure adjusting portion 500 can change the pressure of the non-processing space S1, and in this process, the pressure value thereof can be maintained lower than the pressure value of the processing space S2.

[0240] In addition, the non-processing space pressure adjusting portion 500 can control and adjust the pressure of the non-processing space S1 by only exhaust during the substrate processing, and at this time, it is not necessary to supply the fill gas to the non-processing space S1.

[0241] That is, the non-processing space pressure adjusting portion 500 can adjust the pressure of the non-processing space S1 by only the non-processing space gas exhaust portion 520 without the fill gas supplied from the non-processing space gas supply portion 510.

[0242] In addition, as another example, the non-processing space pressure adjustment section 500 supplies the fill gas to the non-processing space S1, and adjusts the pressure of the non-processing space S1 together with the exhaust of the non-processing space exhaust section 520.

[0243] In addition, unlike the foregoing, the non-processing space pressure adjustment section 500 can be the exhaust port 180 formed on one side of the process chamber 100, i.e., the cavity body 110, and the supply gas port 170 formed on the other side and delivering the fill gas supplied from the outside; and the exhaust port 180 that exhausts the non-processing space S1.

[0244] In particular, the control section described above can be a control structure that adjusts the pressures of the processing space S2 and the non-processing space S1 by the processing space pressure adjustment section 400 and the non-processing space pressure adjustment section 500.

[0245] In particular, the control section described above is associated with the process steps of the substrate processing, and controls the processing space pressure adjustment section 400 and the non-processing space pressure adjustment section 500 of the non-processing space S1 and the processing space S2 in each step.

[0246] For example, the control section described above can supply the purge gas by the supply gas section 410 and exhaust it by the non-processing space exhaust section 520 in a state where the inner lead section 300 is raised and the processing space S2 and the non-processing space S1 are communicated with each other.

[0247] More specifically, the control section described above can supply the purge gas by the supply gas section 410 in order to perform the cleaning operation of the processing space S2 of the substrate processing in a state where the inner lead section 300 is raised and the processing space S2 and the non-processing space S1 are communicated with each other, thereby performing the cleaning or purge operation of the surroundings of the substrate support section 200 of the substrate processing.

[0248] In addition, the purge gas is exhausted by the non-processing space exhaust section 520 provided on the side surface of the process chamber 100, thereby guiding the purge gas supplied by the first gas supply section 410 to flow upward on the side surface, and further guiding the internal suspended matter to be exhausted to the non-processing space S1 and the outside.

[0249] In addition, the control section described above can adjust the pressures of the processing space S2 and the non-processing space S1 by using at least one of the processing space pressure adjustment section 400 and the non-processing space pressure adjustment section 500 before the inner lead section 300 is raised.

[0250] More specifically, in a state in which the inner lead part 300 is lowered to form the sealed processing space S2, the substrate processing is performed, and in order to smoothly move out the substrate 1 on which the processing is completed, before the inner lead part 300 is raised, the position of the substrate 1 is prevented from being changed or damaged due to a pressure difference between the non-processing space S1 and the processing space S2, the control part can control the pressure between the non-processing space S1 and the processing space S2 to be constant using at least one of the processing space pressure adjusting part 400 and the non-processing space pressure adjusting part 500.

[0251] That is, the control part maintains the pressure difference between the non-processing space S1 and the processing space S2 to be constant, and when the inner lead part 300 is raised to connect the non-processing space S1 and the processing space S2, in order to prevent the unidirectional air flow due to the pressure difference from affecting the substrate 1, the control part can adjust the pressure difference between the non-processing space S1 and the processing space S2 to be constant using at least one of the processing space pressure adjusting part 400 and the non-processing space pressure adjusting part 500.

[0252] In addition, the substrate processing apparatus according to the present application can further include a sealing part 900 including a first sealing member 910 disposed at a contact surface of the inner lead part 300 and the process chamber 100 to prevent the process gas from leaking from the processing space S2 to the non-processing space S1, and a second sealing member 920 to prevent the process gas from leaking through the gas supply flow path 190.

[0253] The sealing part 900, which is disposed at at least one of the inner lead part 300 or the bottom surface 120 of the process chamber 100, can be disposed at a position corresponding to the position at which the bottom surface 120 of the process chamber 100 and the inner lead part 300 are in close contact with each other.

[0254] The first sealing member 910 is disposed along the edge of the bottom surface of the inner lead part 300 so as to be in contact with the bottom surface 120 when the edge of the inner lead part 300 is in contact with the bottom surface 120 to form the sealed processing space S2.

[0255] Accordingly, the sealing member 910 can guide the formation of the sealed processing space S2 and can prevent the process gas of the processing space S2 or the like from leaking to the outside space such as the non-processing space S1.

[0256] Also, in order to prevent the process gas from leaking from the contact surface when the inner lead part 310 is lowered and the gas introduction flow path 190 and the gas supply flow path 320 are connected, the second sealing member 920 can be disposed so as to wrap the gas introduction flow path 190 or the gas supply flow path 320 from the bottom of the inner lead part 310.

[0257] At this time, the first sealing member 910 and the second sealing member 920 can be in a circular ring shape as disclosed in the related art.

[0258] Also, the sealing member 900 can be inserted into a groove provided at the bottom surface 120 and can be in close contact with or separated from the inner lead part 300 as the inner lead part 300 moves up and down.

[0259] As another example, the sealing member 900 can be provided at the bottom of the inner lead part 300, and this arrangement is of course possible.

[0260] The inner lead driving part 600 is provided through the upper surface of the process chamber 100 and can have various structures as a structure for driving the inner lead part 300 to move up and down.

[0261] For example, the inner lead driving part 600 can include a plurality of driving rods 610, one end of which is provided through the upper surface of the process chamber 100 and is coupled to the inner lead part 300, and at least one driving source 620, the other end of which is coupled to the plurality of driving rods 610 and drives the driving rods 610 to move up and down.

[0262] Also, the inner lead driving part 600 can further include a fixed support part 640, which is installed on the upper surface of the process chamber 100, i.e., the top lead 140 and supports the ends of the driving rods 610, and a first bellows 630, which is provided between the upper surface of the process chamber 100 and the inner lead part 300 and surrounds the driving rods 610.

[0263] Also, the inner lead driving part 600 can further include a second bellows 650, which is provided to surround the rod part 1120, in order to prevent gas leakage that can occur due to the provision of the top lead 140. The rod part 1120 in the temperature adjustment part 1100, which will be described later, moves up and down as the inner lead part 300 moves up and down.

[0264] The driving rod 610 can be a structure having a function in which one end thereof is provided through the upper surface of the process chamber 100 and is coupled to the inner lead part 300, and the other end thereof is coupled to the driving source 620 outside the process chamber 100 and is driven by the driving source 620 to move up, thereby driving the inner lead part 300 to move up and down.

[0265] At this time, a plurality of the driving rods 610 can be coupled to the upper surface of the inner lead part 300 at a certain interval, and more specifically, the number thereof can be two or four, for guiding the inner lead part 300 to move up and down while maintaining a horizontal state.

[0266] The aforementioned drive source 620, which is a structure that is combined with the fixed support 640 and drives the drive rod 610 to move up and down, can have various structural forms.

[0267] For the aforementioned drive source 620, any conventional drive method disclosed in the prior art can be applied. For example, various drive methods such as cylinder drive, electronic drive, helical motor drive, and cam drive are all feasible.

[0268] The first corrugated pipe 630 is installed between the upper surface of the process cavity 100 and the internal lead wire 300, and wraps around the drive rod 610 to prevent gas or the like in the internal space from leaking out through the upper surface of the process cavity 100.

[0269] At this time, when setting the first corrugated pipe 630, the vertical movement of the internal lead section 300 can be considered for corresponding installation.

[0270] The second corrugated pipe 650 is connected at one end to the cover plate 1140 (described later) and at the other end to the bottom of the top lead wire 140, and wraps around the rod portion 1120. This prevents gas from leaking through the top lead wire 140 that passes through the rod portion 1120, even when the internal lead wire portion 300 and the temperature regulating plate 1110 are moving up and down.

[0271] The temperature regulating unit 1100 is provided in the internal lead portion 300 and can have various structural forms as a structure that regulates the temperature of the substrate 1 located in the processing space S2 together with the internal heater 230.

[0272] That is, the temperature regulating unit 1100 described above can be a structure that heats or cools the substrate 1, so that it can work together with the internal heater 230 to regulate the temperature of the processing space S2 and the substrate 1.

[0273] For example, such as Figure 7 The temperature regulating unit 1100 shown above may include: a temperature regulating plate 1110 installed in the internal lead portion 300 for heating or cooling the substrate 1; and a rod portion 1120 passing through the top lead 140 and connected to the temperature regulating plate 1110.

[0274] Furthermore, the temperature regulating unit 1100 may further include a buffer plate 1130, which is connected to the through opening 350 on the lower side of the internal lead portion 300 and covers the temperature regulating plate 1110.

[0275] Furthermore, the temperature regulating unit 1100 may further include a cover plate 1140, which is disposed on the upper side of the internal lead portion 300 and covers the through opening 350.

[0276] The temperature regulating plate 1110 described above, as a structure provided in the internal lead section 300 for heating or cooling the substrate 1, can have various structural forms.

[0277] For example, the temperature regulating plate 1110 described above is provided on the through-hole 350 formed on the internal lead 310, and can heat or cool the substrate 1.

[0278] In addition, the aforementioned internal heater 230, as a heat-generating element that utilizes electricity to generate heat, provides heat energy to the substrate 1 and the processing space S2 through the substrate support plate 210. In the initial heating stage, the heating time is long and it is difficult to immediately cope with rapid temperature changes, which presents a series of problems.

[0279] Therefore, the temperature regulating plate 1110 described above is a structure that can immediately provide heat to the substrate 1 in a short time. For example, a halogen or LED heater can be used to achieve efficient temperature regulation.

[0280] Furthermore, the temperature regulating plate 1110 described above can form a cooling flow path inside in order to cool the substrate 1 immediately in a short time, thereby cooling the substrate 1 by means of refrigerant circulation.

[0281] In addition, the temperature regulating plate 1110 may form a stepped structure on its edge, as described above, and may be supported by the supporting step 370 of the through-hole 350 provided in the internal lead 310.

[0282] Furthermore, as another example, the aforementioned temperature regulating plate 1110 can, of course, be disposed on the bottom surface of the internal lead 310 by simple attachment or bonding, thereby being directly exposed to the substrate 1.

[0283] Furthermore, the aforementioned temperature regulating plate 1110 may include at least two temperature regulating areas, the planes of which are separated from each other and can be adjusted independently.

[0284] At this time, as Figure 9 The temperature adjustment area shown may include: a first temperature adjustment area 1111, which shares a center with the circular temperature adjustment plate 1110 on the plane, and is divided into a circle on the plane at a position corresponding to the center of the substrate 1; a temperature adjustment area 1113 divided at the edge of the temperature adjustment plate 1110; and a second temperature adjustment area 1112, which is divided between the first temperature adjustment area 1111 and the third temperature adjustment area 1113.

[0285] That is, the temperature adjustment area mentioned above can be divided into areas where the temperature can be adjusted independently, based on the area corresponding to the substrate 1 which is disposed opposite to the temperature adjustment plate 1110. In this way, the temperature of a specific area on the substrate 1 can be adjusted independently.

[0286] The aforementioned rod 1120, which serves as a structure that passes through the top lead 140 and is combined with the aforementioned temperature regulating plate 1110, can have various structural forms.

[0287] At this time, the aforementioned rod portion 1120 may be a structure that forms a hollow interior and provides various refrigerants or power sources to the temperature regulating plate 1110 from the outside.

[0288] For example, the aforementioned rod 1120 may include: a rod 1121 that passes through the top lead 140 and is supported and connected to the aforementioned temperature regulating plate 1110; and a supply line 1122 that is inserted into the hollow position of the rod 1121 and supplies power or refrigerant to the temperature regulating plate 1110 from the outside.

[0289] The buffer plate 1130 is combined with the through opening 350 on the lower side of the internal lead portion 300, and can have various structural forms as a structure covering the temperature regulating plate 1110.

[0290] For example, such as Figure 6 The buffer plate 1130 shown above is connected to the through opening 350 on the lower side of the internal lead portion 300, and can be disposed between the temperature regulating plate 1110 and the substrate 1, thus acting as a medium for heat exchange between the temperature regulating plate 1110 and the substrate 1.

[0291] At this time, the aforementioned buffer plate 1130 is made of quartz material, and can be stably designed and manufactured even under high temperature and high pressure conditions.

[0292] Therefore, the buffer plate 1130 can prevent the temperature regulating plate 1110 from being directly exposed to the high-pressure environment of the processing space S2, thus minimizing the impact of high pressure and protecting the temperature regulating plate 1110 while facilitating heat exchange.

[0293] At this time, as Figure 2 The buffer plate 1130 shown above can be disposed below the through-hole 350 of the internal lead 310, and more specifically, can be supported by the support portion 380 disposed at the lower edge of the through-hole 350 of the internal lead 310.

[0294] The cover plate 1140, which is provided on the upper side of the internal lead portion 300 and covers the through opening 350, can have various structural forms.

[0295] For example, the cover plate 1140 can cover the through hole 350 of the temperature adjustment plate 1110 of the inner lead 310 in a state where the rod portion 1120 penetrates, and by combining the end portion of the second bellows 650, the movement of the temperature adjustment plate 1110 can be made easier.

[0296] The temperature control portion can be configured to heat or cool the temperature adjustment portion 1100.

[0297] For example, in consideration of the fact that the temperature of the edge of the substrate 1 is lower than that of the center, in order to improve this, the temperature control portion can make the temperature of the third temperature adjustment region 1113 higher than that of the first temperature adjustment region 1111 by adjusting the temperature.

[0298] Also, the temperature control portion can maintain the temperature of the substrate 1 or the process space S2 constant during the pressure change of the process space S2 by controlling the temperature adjustment portion 1100.

[0299] In particular, as shown in the substrate processing apparatus of the present application, Figure 6 the pressure of the process space S2 provided on the substrate 1 changes, which further causes a sharp temperature change.

[0300] In order to prevent such a sharp temperature change, the temperature of the substrate 1 and the process space S2 can be maintained constant by controlling the temperature adjustment portion 1100.

[0301] In addition, as described above, when the substrate support portion 200 is installed in the installation groove 130, a space is formed between the substrate support portion 200, more specifically, the substrate support plate 210 and the installation groove 130, which can increase the volume of the process space S2 and become an element for changing the volume.

[0302] In order to improve the above-mentioned problems, when the installation groove 130 is provided to contact the substrate support portion 200, the heat generated by the heater provided in the substrate support portion 200 is absorbed by the lower surface of the process chamber 100 through the installation groove 130, and further, a certain amount of heat loss occurs, which makes it difficult to further set and maintain the process temperature of the process space S2, and there is a problem of low efficiency.

[0303] In order to improve these problems, based on the filling member 700 in the present application, as a structure provided between the substrate support portion 200 and the lower surface of the process chamber 100, it can have various structures.

[0304] For example, the filling member 700 can be installed in the installation groove 130, and in a state in which it is disposed in the installation groove 130, the substrate support flat plate 210 can minimize the volume of the remaining space disposed on the upper side and between the installation groove 130 and the substrate support flat plate 210, so that the volume of the processing space S2 can be further reduced.

[0305] To this end, the filling member 700 can form a shape corresponding to the space between the installation groove 130 and the substrate support portion 200, thereby minimizing the volume of the processing space S2.

[0306] More specifically, the filling member 700 has a shape corresponding to the space between the installation groove 130, which forms a circular stepped structure on a plane and protrudes a certain height from the bottom surface 120, and the planar circular substrate support flat plate 210.

[0307] To this end, the filling member 700 can have a circular flat plate shape structure disposed between the substrate support flat plate 210 and the installation groove 130, or can have a circular flat plate shape structure in which a stepped structure is formed upward at the edge portion, thereby occupying the space between the side surface of the substrate support flat plate 210 and the installation groove 130.

[0308] That is, the filling member 700 is disposed adjacent to at least one of the side surface and the bottom surface of the substrate support flat plate 210 and is spaced apart from the substrate support flat plate 210, thereby forming a structure in which the bottom surface and the side surface of the substrate support flat plate 210 are wrapped.

[0309] At this time, the substrate support portion 200 can be spaced apart from the filling member 700 in order to prevent heat loss through the filling member 700, and more specifically, can be spaced apart at a fine interval while maintaining a state in which they do not contact each other.

[0310] Thus, a certain interval can be maintained between the substrate support portion 200 and the filling member 700, and the interval can function as an exhaust flow path, and thus the processing space S2 can be exhausted.

[0311] More specifically, since the substrate support portion 200 and the filling member 700 are spaced apart from each other, an exhaust flow path can be formed. At this time, the exhaust flow path is in communication with the bottom of the installation groove 130 through which the substrate support column 220 passes, and thus the process gas of the processing space S2 can be exhausted to the outside.

[0312] On the other hand, the filling member 700 can be composed of at least one material among quartz, ceramic, and SUS.

[0313] And, the filling member 700 can minimize the volume of the processing space S2, and can minimize the heat loss from the substrate support 200 to the bottom surface 120 of the process chamber 100 by heat insulation, and can further reflect the lost heat to the processing space S2 by heat reflection.

[0314] That is, the filling member 700 can minimize the volume of the processing space S2, and can prevent the heat loss from the substrate support 200 to the bottom surface 120 of the process chamber 100, and can further improve the heat energy utilization rate by heat reflection.

[0315] In addition, on the basis thereof, a reflection part provided on the surface can be further included to increase the effect of reflecting the emitted heat to the processing space S2 through the substrate support 200.

[0316] That is, the filling member 700 can include a heat insulation part for blocking the heat emitted from the processing space S2 to the outside, and a heat reflection part provided on the surface of the heat insulation part and reflecting the heat.

[0317] At this time, the reflection part can form a reflection layer applied on the surface of the heat insulation part, or formed by adhesion or coating, and can reflect the heat lost from the processing space S2 through the process chamber 100 and then transferred to the processing space S2 again.

[0318] And, the filling member 700 can further include a plurality of first through-holes having a size corresponding to the center to be mounted to the substrate support column 220, and a plurality of second through-holes through which the substrate support pins 810 pass and are movable in the up-and-down direction.

[0319] The substrate support pin part 800, which is a structure for introducing and removing the substrate 1 to and from the process chamber 100 and mounted on the substrate support 200, can have various structures.

[0320] For example, the substrate support pin part 800 can include a plurality of substrate support pins 810 passing through the filling member 700 and the substrate support 200 and movable up and down to support the substrate 1, a ring-shaped substrate support ring 820 on which the plurality of substrate support pins 810 are mounted, and a substrate support pin driving part 830 driving the plurality of substrate support pins 810 in the up-and-down direction.

[0321] The plurality of substrate support pins 810 provided to the substrate support ring 820 support the substrate 1 by passing through the filling member 700 and the substrate support 200 and moving up and down, and the related structure thereof can have various designs.

[0322] At this time, the plurality of substrate support pins 810 can be provided at least three and spaced apart from each other on the substrate support ring 820, exposed from the substrate support portion 200 to support the introduced substrate 1 when rising, or support the removed substrate 1; inside the substrate support portion 200 when descending, so that the substrate 1 can be placed in the substrate support portion 200.

[0323] The above-mentioned substrate support ring 820 is provided as a ring structure with a plurality of substrate support pins 810, which are simultaneously moved up and down when moving up and down.

[0324] In particular, the above-mentioned substrate support ring 820 is provided at the lower surface of the process chamber 100, i.e. in the support pin mounting groove 160 formed in the mounting groove 130, and can be moved up and down under the action of the substrate support pin driving portion 830.

[0325] The above-mentioned substrate support pin driving portion 830, which is provided outside the process chamber 100 and is provided with a structure for driving the substrate support ring 820 in the up-down direction, can have various structural forms.

[0326] For example, the above-mentioned substrate support pin driving portion 830 can include a substrate support pin rod 831, one end of which is connected to the bottom of the substrate support ring 820 and the other end is connected to the substrate support pin driving source 833, which is moved up and down under the driving force of the substrate support pin driving source 833; and a substrate support pin guide 832, which guides the linear movement of the substrate support pin rod 831, and the substrate support pin driving source 833 that drives the substrate support pin rod 831.

[0327] In addition, the above-mentioned substrate support pin portion 800 can additionally include a substrate support pin balancer 840, which wraps the substrate support pin rod 831 and is provided between the bottom of the process chamber 100 and the substrate support pin driving source 833.

[0328] The above-mentioned manifold portion 1000 is provided at the lower surface of the process chamber 100, communicates with the processing space S2, and as a structure for forming at least one processing space exhaust port for communication with the above-mentioned exhaust portion 420, can have various structural forms.

[0329] For example, as shown in Figure 3 The above-mentioned manifold portion 1000 can include a manifold 1010 provided at the lower surface of the process chamber 100 and communicating with the internal processing space S2; and a processing space exhaust port provided in the above-mentioned manifold 1010 and combined with at least one of the above-mentioned processing space pressure regulating portion 400.

[0330] At this time, the above-mentioned manifold 1010 is mounted at the lower surface of the process chamber 100, and can communicate with the processing space S2 to perform exhaust.

[0331] In addition, the aforementioned manifold 1010 is provided with a lower through hole 1011 through which various wires connected to the heater provided on the substrate support plate 210 are passed through the aforementioned substrate support column 220.

[0332] The exhaust ports of the aforementioned processing space may include: a high-pressure exhaust port 1020, which is disposed in the manifold 1010 and forms an exhaust section 420 as described above; and a pump suction exhaust port 1030. As another example, the manifold 1010 is provided with a single port, which can be connected to both the high-pressure exhaust port 1020 and the pump suction exhaust port 1030 when combined with them.

[0333] The substrate processing method utilizing the substrate processing apparatus of the present invention will now be described in detail with reference to the accompanying drawings.

[0334] Based on the substrate processing method of the present invention, such as Figures 10 to 12 As shown, it includes: a substrate introduction step S100, in which the substrate 1 is introduced into the internal space through the gate 111 and installed on the substrate support 200 by a transfer robot provided on the outside; a processing space formation step S200, in which, through the substrate introduction step S100, with the substrate 1 installed on the substrate support 200, the internal lead portion 300 is moved down so that part of its structure is in close contact with the bottom surface 120 of the process cavity 100, thereby dividing the internal space into a sealed processing space S20 and the remaining non-processing space S1; and a substrate processing step S300, in which substrate processing is performed on the substrate 1 installed in the processing space S2.

[0335] Furthermore, the substrate processing method of the present invention may further include: a processing space release step S400, in which the internal lead portion 300 is moved upward after the substrate processing step S300 is completed, thereby releasing the closed processing space S2; and a substrate removal step S500, in which the substrate 1, which has completed the substrate processing by a transfer robot provided on the outside, is removed from the internal space to the outside by the gate 111.

[0336] Furthermore, the substrate processing method of the present invention also includes a cleaning step, wherein before the substrate 1 is introduced into the internal space through the substrate introduction step S100, in the state where the internal lead portion 300 has been raised, process gas is supplied through the processing space S2 side and the process gas is exhausted through the non-processing space S1 side.

[0337] The substrate introduction step S100 is a step of introducing the substrate 1 through the gate 111 into the internal space by the transfer robot provided outside and mounting the substrate 1 on the substrate support portion 200, and can be performed using various methods.

[0338] That is, in the substrate introduction step S100, the substrate 1 as a processing target is introduced into the internal space by the transfer robot provided outside and mounted on the substrate support portion 200, thereby performing a related preparation for processing the substrate 1.

[0339] For example, the substrate introduction step S100 can include an introduction reinforcement step of moving the substrate support pin 810 upward to the upper side of the substrate support portion 200 in a state in which the internal lead portion 300 is completed to be raised before the introduction step described later.

[0340] Further, the substrate introduction step S100 includes an introduction step of introducing the substrate 1 through the gate 111 into the internal space by the transfer robot provided outside and supporting the substrate 1 using the raised substrate support pin 810, and an introduction fixation step of moving the substrate support pin 810 supporting the substrate 1 downward to mount the substrate 1 on the substrate support portion 200.

[0341] The introduction reinforcement step is a step of raising the substrate support pin 810 above the substrate support portion 200 in a state in which the internal lead portion 300 is completed to be raised, that is, in a state in which the processing space S2 is released.

[0342] At this time, the introduction reinforcement step is a step of repeatedly performing substrate processing on a plurality of substrates 1, and can be omitted after the first substrate 1 is introduced and processed and the substrate 1 is moved out in a state in which the substrate support pin 810 is completed to be raised according to the removal reinforcement step described later, and the introduction step is immediately performed.

[0343] As a result, the introduction reinforcement step is a step of initially introducing the substrate 1 into the substrate processing apparatus, and is performed in this case, and is not redundantly described and omitted thereafter.

[0344] The introduction step is a step of introducing the substrate 1 into the internal space through the gate 111 by the transfer robot provided outside and supporting the substrate 1 using the substrate support pin 810.

[0345] More specifically, the introduction step is a step of introducing the substrate 1 supported by the transfer robot provided outside into the internal space through the gate 111, lowering the transfer robot, supporting the substrate 1 on the substrate support pin 810, and thus allowing the external robot to be moved from the internal space to the outside.

[0346] Further, as another example, in a state where the substrate 1 supported by the transfer robot provided outside is introduced into the internal space through the gate 111, the substrate support pins 810 are moved upward to support the substrate 1 and the outside robot is moved out.

[0347] In the above introduction and fixing step, the substrate support portion 200 is supported by lowering the substrate support pins 810 supporting the substrate 1, and more specifically, the substrate 1 is fixedly mounted on the upper surface of the substrate support plate 210 by inserting the substrate support pins 810 into the inside of the substrate support plate 210.

[0348] The above processing space forming step S200 is a step of dividing the internal space into the closed processing space S2 and the non-processing space SI other than the processing space S2 by lowering the internal lead portion 300 and closely contacting a part of the structure thereof with the bottom surface 120 of the process chamber 100 in a state where the substrate 1 is mounted on the substrate support portion 200 by the substrate introduction stage S100, and can be performed using various methods.

[0349] For example, the above processing space forming step S200 is a step of lowering the internal lead portion 300 and closely contacting the bottom surface 120 and the edge position of the process chamber 100 in a state where the substrate 1 is mounted on the substrate support portion 200, thereby forming the closed processing space S2. At this time, in order to form the closed processing space S2, the sealing portion 320 of the internal lead portion 300 can be closely contacted with the bottom surface 120.

[0350] Accordingly, the above processing space forming step S200 can individually form the closed processing space S2 separated from the internal space, and can minimize the volume of the processing space S2 in a state where the substrate 1 is provided in the inside.

[0351] Further, the above processing space forming step S200 lowers the internal lead portion 300 to closely contact a part of the structure thereof with the bottom surface 120 of the process chamber 100, thereby dividing the internal space into the closed processing space S2 and the non-processing space SI other than the processing space S2.

[0352] Accordingly, the above setting method forms a high-pressure environment in the existing internal space, thereby performing the substrate processing, and thus improves the problem of causing damage to the gate valve. Further, by forming the non-processing space SI, which is a buffer space, between the processing space S2 and the gate valve, it is possible to prevent damage to the gate valve even during the substrate processing at a high pressure.

[0353] The above substrate processing step S300 is a step of performing the substrate processing on the substrate 1 provided in the processing space S2, and can be performed using various methods.

[0354] At this time, the substrate processing step S300 can adjust and control the pressure in the processing space S2 by supplying the processing gas into the closed processing space S2 through the gas supply portion 400.

[0355] In particular, the substrate processing step S300 can include a pressure increasing step of increasing the pressure in the processing space S2 using the process gas, and a pressure decreasing step of decreasing the pressure in the processing space S2 after the pressure increasing step.

[0356] At this time, in the substrate processing step S300, the pressure can be increased to a level higher than the atmospheric pressure, for example, to a high pressure of 5 bar, and can be decreased, for example, to a level of 0.01 torr lower than the atmospheric pressure.

[0357] In this case, the substrate processing step S300 can repeatedly perform the pressure increasing step and the pressure decreasing step a plurality of times in a short time.

[0358] More specifically, the substrate processing step S300 includes a pressure increasing step S310 of increasing the pressure in the processing space S2 to a first pressure higher than the atmospheric pressure, and a pressure decreasing step S320 of decreasing the pressure in the processing space S2 from the first pressure to a second pressure.

[0359] Also, the substrate processing step S300 can repeatedly perform the pressure increasing step S310 and the pressure decreasing step S320 as one unit cycle a plurality of times, thereby performing the repeated pressure change of the processing space S2.

[0360] At this time, the second pressure can be a pressure lower than the atmospheric pressure, and the first pressure can be a pressure higher than the atmospheric pressure.

[0361] The pressure decreasing step S320 can include a first pressure decreasing step S321 of decreasing the pressure in the processing space S2 from the first pressure to the atmospheric pressure, and a second pressure decreasing step S322 of decreasing the pressure in the processing space S2 from the atmospheric pressure to the second pressure lower than the atmospheric pressure.

[0362] Therefore, the pressure decreasing step S320 can decrease the pressure in stages after the first pressure decreasing step S321 of decreasing the pressure in the processing space S2 from the first pressure higher than the atmospheric pressure to the atmospheric pressure, and the second pressure decreasing step S322 of decreasing the pressure from the atmospheric pressure to the second pressure lower than the atmospheric pressure.

[0363] Also, the substrate processing step S300 can maintain the pressure in the non-processing space S1 constant at a vacuum pressure lower than the atmospheric pressure during the change in the pressure in the processing space S2.

[0364] The processing space release step S400 is a step of releasing the processing space S2 by moving the internal lead portion 300 upward after the substrate processing step S300. The processing space release step S400 can be performed by various methods.

[0365] At this time, the processing space release step S400 moves the internal lead portion 300 upward by the internal lead drive portion 600 to release the contact with the bottom surface 120 of the process chamber 100 and to connect the internal space and the processing space S2 again. Thus, the processing space S2 is released.

[0366] In this case, in a state where the pressure difference between the processing space S2 and the non-processing space S1 is large, the internal lead portion 300 is moved upward. In this case, the pressure difference between the two spaces can cause damage to the substrate 1 and the durability. Therefore, it is necessary to reduce the pressure difference between the two spaces to the minimum.

[0367] To this end, the processing space release step S400 can include a pressure adjustment step S410 of adjusting at least one of the pressures of the non-processing space S1 and the processing space S2 to a level lower than a predetermined level and a internal lead portion upward movement step S420 of releasing the processing space S2 by moving the internal lead portion 300 upward.

[0368] At this time, in the pressure adjustment step S410, the supply portion 400 or the processing space S2 can be exhausted by an exhaust portion (not shown) to adjust the pressure of the processing space S2 and to reduce the pressure difference with the non-processing space S1. In addition, the processing space S2 can be supplied with gas by another method to reduce the pressure difference with the non-processing space S1 to a level lower than a predetermined level.

[0369] In this case, the pressure adjustment step S410 can adjust the pressure of at least one of the processing space S2 and the non-processing space S1 to maintain the pressure difference between the processing space S2 and the non-processing space S1 within a certain range.

[0370] In particular, when the internal lead portion 300 is moved upward in a state where the processing space S2 is at a high pressure and the non-processing space S1 is at a vacuum state, the substrate 1 can be damaged due to a sudden change in the pressure difference between the spaces. Therefore, the internal lead portion 300 can be moved upward when the pressure difference between the spaces is adjusted to be the same.

[0371] The substrate removal step S500 is a step of removing the substrate 1 from the internal space to the outside through the gate 111 by a transfer robot provided outside after the substrate processing is completed. The substrate removal step S500 can be performed by various methods.

[0372] That is, the substrate removal step S500 can receive the processed substrate 1 from the substrate support portion 200 and remove it from the internal space by an external transfer robot.

[0373] For example, the substrate removal step S500 can include a removal reinforcement step, raising the substrate support pins 810, and spacing the substrate 1 mounted on the substrate support portion 200 upward from the substrate support portion 200 and supporting it using the substrate support pins 810, and a removal step, removing the processed substrate 1 from the internal space through the gate 111 by a transfer robot provided outside.

[0374] Also, the substrate removal step S500 can additionally include a removal reinforcement step, raising the substrate support pins 810 to the inside of the substrate support portion 200 after the removal step.

[0375] The removal reinforcement step is a step of raising the substrate support pins 810 to the upper side of the substrate support portion 200 in the state in which the internal lead portion 300 is raised in the processing space release step S400, that is, in the state in which the processing space S2 is released.

[0376] Accordingly, in the removal reinforcement step, the substrate 1 mounted on the substrate support plate 210 can be moved from the substrate support plate 210 together with the substrate support pins 810 after processing is completed and exposed to the upper side, so that the substrate 1 is spaced upward from the substrate support plate 210 and supported.

[0377] The removal step is a step of removing the processed substrate 1 from the internal space to the outside through the gate 111 by a transfer robot provided outside.

[0378] More specifically, in the removal step, the substrate 1 supported by the substrate support pins 810 is supported by a transfer robot introduced into the internal space through the gate 111, and the supported substrate 1 is removed to the outside.

[0379] The removal step can be a step of removing the processed substrate 1 from the internal space to the outside through the gate 111 by a transfer robot provided outside.

[0380] More specifically, in the removal step, the substrate 1 supported by the substrate support pins 810 is supported by a transfer robot introduced into the internal space through the gate 111, and the supported substrate 1 is removed to the outside.

[0381] To this end, in the above-described moving-out step, the transfer robot is positioned below the substrate 1 in a state where the processed substrate 1 is supported by the substrate support pins 810, and the transfer robot is moved upward so that the transfer robot can support the substrate 1.

[0382] In addition, as another example, in the above-described moving-out step, the transfer robot is positioned below the substrate 1 in a state where the processed substrate 1 is supported by the substrate support pins 810, and the substrate support pins 810 are lowered so that the substrate 1 can be positioned on the transfer robot.

[0383] According to the above, in a state where the substrate 1 is supported by the transfer robot, the transfer robot is moved to the outside through the gate 111, and the processed substrate 1 can be smoothly moved out.

[0384] The above-described moving-out fixing step can be a step of lowering the substrate support pins 810 supporting the substrate 1 so that the substrate support pins 810 are inserted into the substrate support portion 200, and more specifically, into the inside of the substrate support plate 210.

[0385] At this time, the above-described moving-out fixing step can be repeatedly performed for a plurality of substrates 1, and can be performed after the last substrate 1 is moved out. Before the above-described introduction step is performed, it is necessary to maintain the state where the substrate support pins 810 are raised, and this part is omitted.

[0386] As a result, the above-described moving-out fixing step can be performed after the last substrate 1 is moved out from the substrate processing apparatus, or in a state where the substrate processing apparatus is maintained for maintenance.

[0387] In addition, the above-described substrate introduction step S100, the above-described processing space forming step S200, the above-described substrate processing step S300, the above-described processing space releasing step S400, and the above-described substrate moving-out step S500 can constitute a unit cycle S10, and can be repeatedly performed a plurality of times in sequence, and one substrate 1 can be processed corresponding to one cycle.

[0388] In addition, as another example, the substrate processing method of the present application can further include a gate closing step of closing the gate 111 through the gate valve 150 after the processing space forming step S200, so that the inside space is sealed.

[0389] In addition, the substrate processing method of the present application can further include a gate opening step of opening the gate 111 through the gate valve 150 before the above-described substrate introduction step S100.

[0390] Further, the substrate processing method of the present application can further include a gate opening step of opening the gate 111 by the gate valve 150 after the processing space release step S400.

[0391] Further, the substrate processing method of the present application can further include a gate closing step of closing the gate 111 by the gate valve 150 after the removal step S500.

[0392] The gate closing step can be a step of closing the gate 111 by the gate valve 150 to seal the inner space.

[0393] At this time, the gate closing step can seal the inner space after the processing space forming step S200. In this case, as another example, the gate closing step can be performed after the substrate introduction step S100 and before the processing space forming step S200, of course.

[0394] That is, the substrate processing method of the present application can close the gate 111 by the gate valve 150 since the processing space S2 can be selectively formed in the inner space as needed, and thus the corresponding step can be smoothly performed regardless of the formation of the processing space S2.

[0395] That is, the formation of the processing space S2 based on the inner lead portion 300 can determine the execution based on whether the gate 111 needs to be closed by the gate valve 150.

[0396] Further, in order to be able to individually perform pressure control on the inner space, the gate closing step of closing the gate 111 by the gate valve 150 can be performed, and can be performed after the processing space forming step S200.

[0397] Further, the gate closing step can be performed to close the gate 111 after the removal step S500, in which case it can be omitted in the process of repeatedly performing the substrate processing on a plurality of substrates 1, and can be performed only when the substrate processing on the last substrate 1 is completed or the substrate processing apparatus needs to be maintained.

[0398] The gate opening step can be a step of opening the gate 111 by the gate valve 150.

[0399] At this time, the gate opening step can open the inner space after the processing space release step S400, in which case, as another example, the gate closing step can be performed after the substrate processing step S300 and before the processing space release step S400, of course.

[0400] Therefore, the above-mentioned gate opening step can be performed before the substrate removal step S500, so that the substrate 1 that has completed the substrate processing can be removed to the outside.

[0401] Furthermore, the aforementioned gate opening step can be performed before the substrate introduction step S100 to open the gate 111. In this case, the process of repeatedly processing multiple substrates 1 can be omitted, and the corresponding steps can be selectively performed only when the substrate 1 is initially introduced or when the substrate processing apparatus needs maintenance.

[0402] The cleaning step described above can be a process where, before the substrate 1 is introduced into the internal space in the substrate introduction step S100, gas is supplied through the processing space S2 side and exhaust is performed through the non-processing space S1 side while the internal lead section 300 is in a raised state.

[0403] More specifically, before the substrate 1 is introduced into the internal space through the substrate introduction step S100, or after the substrate 1 is removed from the internal space through the substrate removal step S500, the internal space, including the processing space S2 for performing substrate processing, is cleaned.

[0404] At this time, in the above cleaning step, exhaust gas can be vented through the exhaust port (not shown) on the non-processing space S1 side, and cleaning gas can be sprayed through the air supply unit 400 on the processing space side, thereby venting the purge gas through the processing space S2 and through the exhaust port of the non-processing space S1.

[0405] That is, the gas mentioned above at this time can refer to various gases such as process gas used for substrate processing, cleaning gas used for cleaning the inside of the equipment, and purging gas used for purging the internal space. Furthermore, the cleaning gas can be injected through the gas supply unit 400 on the processing space side, and the purging gas can be discharged through the exhaust port of the non-processing space S1.

[0406] Therefore, in the above cleaning steps, the cleaning gas is guided from the processing space S2 to the non-processing space S1, so that the cleaning of the internal space, especially the area corresponding to the processing space S2, can be performed more completely.

[0407] At this time, as Figure 6 The high-pressure control unit 430 shown is connected from the rear end of the external vacuum pump 1200 to the external exhaust line 1120 in order to protect the external vacuum pump 1200, thereby allowing the exhaust gas to be transported to the hazardous substance removal unit 1110.

[0408] The above merely corresponds to the description of the preferred embodiments of the present application, and the scope of the technical core of the present application is not limited to the above embodiments, and the technical idea involved in the above description, and all the technical ideas combined with the technical core should be understood as included in the scope of the present application.

Claims

1. A substrate processing apparatus, characterized in that, include: The process cavity (100) has an installation groove (130) formed on the center side of the bottom surface (120) and forms an internal space; as well as A substrate support (200) is inserted into the mounting groove (130), and a substrate (1) is disposed on it; as well as The internal lead section (300) can move up and down within the aforementioned internal space. When descending, a portion of its structure comes into close contact with the bottom surface (120) adjacent to the mounting groove (130), dividing the internal space into a sealed processing space (S2) within the substrate support section (200) and a remaining non-processing space (S1); and An internal lead drive unit (600) penetrates the upper part of the aforementioned process cavity (100) and drives it to move up and down; The aforementioned internal lead section (300) includes: an internal lead (310) that can move up and down in the aforementioned internal space; and a gas supply flow path (320) that is provided inside the aforementioned internal lead (310) and communicates with the aforementioned processing space (S2). The aforementioned process cavity (100) includes: a gas inlet flow path (190) for supplying process gas introduced from the outside to the lower surface that is in contact with the aforementioned internal lead portion (300); The aforementioned internal lead section (300) descends and comes into close contact with the aforementioned bottom surface (120), connecting the aforementioned gas inlet flow path (190) and the aforementioned gas supply flow path (320), and receiving process gas from the aforementioned gas supply flow path (320).

2. The substrate processing apparatus according to claim 1, characterized in that, It also includes: The gas supply unit (410) is located at the lower part of the internal lead section (300) and injects the supplied process gas into the processing space (S2) through the gas supply flow path (320).

3. The substrate processing apparatus according to claim 2, characterized in that, The aforementioned air supply unit (410) includes: a jet plate (412) disposed on the lower side of the aforementioned internal lead wire unit (300), and provided with a plurality of jet holes (411).

4. The substrate processing apparatus according to claim 3, characterized in that, The aforementioned air supply unit (410) further includes: a jet plate support unit (413) that supports the edge of the aforementioned jet plate (412) and is attached to the bottom surface of the aforementioned internal lead wire unit (300).

5. The substrate processing apparatus according to claim 3, characterized in that, The aforementioned spray plate (412) is disposed separately from the aforementioned internal lead portion (300), and a diffusion space (S3) for the diffusion of process gas is formed between it and the aforementioned internal lead portion (300).

6. The substrate processing apparatus according to claim 2, characterized in that, The aforementioned internal lead wire (310) has an insertion mounting groove (330) into which at least a portion of the aforementioned air supply unit (410) is inserted.

7. The substrate processing apparatus according to claim 6, characterized in that, When the gas supply unit (410) is inserted into the insertion mounting slot (330), its bottom surface forms the bottom surface and plane of the internal lead wire (310).

8. The substrate processing apparatus according to claim 1, characterized in that, The gas supply path (320) includes: a vertical supply path (321) disposed at the edge of the internal lead (310) at a position corresponding to the gas inlet path (190) and connected to the gas inlet path (190); and a horizontal supply path (322) disposed along the center side of the internal lead (310) on the vertical supply path (321).

9. The substrate processing apparatus according to claim 1, characterized in that, Also includes: A temperature adjustment unit (1100) is provided in the internal lead section (300) to adjust the temperature of the substrate (1) located in the processing space (S2).

10. The substrate processing apparatus according to claim 1, characterized in that, The substrate support portion (200) includes: a substrate support plate (210) on which the substrate (1) is mounted; a substrate support column (220) that penetrates the bottom of the mounting groove (130) and is connected to the substrate support plate (210); and an internal heater (230) disposed inside the substrate support plate (210).

11. The substrate processing apparatus according to claim 9, characterized in that, The temperature regulating unit (1100) includes: a temperature regulating plate (1110) disposed in the internal lead portion (300) for heating or cooling the substrate (1); and a rod portion (1120) that passes through the top of the process cavity (100) and is combined with the temperature regulating plate (1110).

12. The substrate processing apparatus according to claim 11, characterized in that, The temperature regulating unit (1100) further includes a buffer plate (1130) which is combined with the through opening (350) on the lower side of the internal lead part (300) and covers the temperature regulating plate (1110).

13. The substrate processing apparatus according to claim 11, characterized in that, The aforementioned temperature control plate (1110) includes at least two temperature control areas that are distinct from each other on a plane and can independently adjust the temperature of each other.

14. A substrate processing apparatus, characterized in that, include: The process cavity (100) has an installation groove (130) formed on the center side of the bottom surface (120) and forms an internal space; as well as A substrate support (200) is inserted into the mounting groove (130), and a substrate (1) is disposed on it; as well as The internal lead section (300) can move up and down within the aforementioned internal space. When descending, a portion of its structure comes into close contact with the bottom surface (120) adjacent to the mounting groove (130), dividing the internal space into a sealed processing space (S2) within the substrate support section (200) and a remaining non-processing space (S1); and An internal lead drive unit (600) penetrates the upper part of the aforementioned process cavity (100) and drives it to move up and down; The aforementioned internal lead section (300) includes: an internal lead (310) that can move up and down in the aforementioned internal space; and a gas supply flow path (320) that is provided inside the aforementioned internal lead (310) and communicates with the aforementioned processing space (S2). The aforementioned internal lead wire (310) forms a gas inlet groove (340) on the center side of the bottom surface, which is connected to the end of the aforementioned gas supply flow path (320).

15. A substrate processing apparatus, characterized in that, include: The process cavity (100) has a mounting groove (130) formed on the center side of its bottom surface (120), thus forming an internal space; and A substrate support (200) is inserted into the mounting groove (130), and the substrate (1) is disposed thereon; and The internal lead section (300) can move up and down within the aforementioned internal space. When descending, a portion of its structure comes into close contact with the bottom surface (120) adjacent to the mounting groove (130), dividing the internal space into a sealed processing space (S2) within the substrate support section (200) and a remaining non-processing space (S1); and An internal lead drive unit (600) penetrates the upper part of the aforementioned process cavity (100) and drives it to move up and down; The internal lead section (300) includes: an internal lead (310) that can move up and down in the internal space; and a gas supply flow path (320) that is connected to the processing space (S2) inside the internal lead (310). The substrate processing apparatus further includes: A pressure regulating unit (400) for processing space is connected to the processing space (S2) and regulates the pressure of the processing space (S2); and The non-processing space pressure regulating unit (500) is connected to the non-processing space (S1) and can regulate the pressure of the non-processing space (S1) independently of the processing space (S2); and The control unit regulates the pressure of the processing space (S2) and the non-processing space (S1) through the processing space pressure regulating unit (400) and the non-processing space pressure regulating unit (500).

16. The substrate processing apparatus according to claim 15, characterized in that, The aforementioned processing space pressure regulating unit (400) includes: a gas supply unit (410) for supplying process gas to the aforementioned processing space (S2); and an exhaust unit (420) for exhausting the aforementioned processing space (S2); The aforementioned non-processing space pressure regulating unit (500) includes: a non-processing space exhaust unit (520) connected to an exhaust port (180) formed on one side of the aforementioned process chamber (100) to exhaust the aforementioned non-processing space (S1); and a non-processing space gas supply unit (510) connected to a gas supply port (170) formed on the other side of the aforementioned process chamber (100) to supply filling gas to the aforementioned non-processing space (S1).

17. The substrate processing apparatus according to claim 15, characterized in that, The control unit controls at least one of the processing space pressure regulating unit (400) and the non-processing space pressure regulating unit (500) to make the pressure of the processing space (S2) and the non-processing space (S1) tend to be the same before the internal lead part (300) rises.

18. The substrate processing apparatus according to claim 15, characterized in that, The control unit adjusts the pressure of the processing space (S2) used for substrate processing and mounting of the substrate (1) by means of the processing space pressure adjustment unit (400), so that it is between a first pressure higher than normal pressure and a second pressure lower than normal pressure.

19. A substrate processing apparatus, characterized in that, The process cavity (100) has a mounting groove (130) formed on the center side of its bottom surface (120), thus forming an internal space; and A substrate support (200) is inserted into the mounting groove (130), and a substrate (1) is disposed on it; as well as The internal lead section (300) can move up and down within the aforementioned internal space. When descending, a portion of its structure comes into close contact with the bottom surface (120) adjacent to the mounting groove (130), dividing the internal space into a sealed processing space (S2) within the substrate support section (200) and a remaining non-processing space (S1); and An internal lead drive unit (600) penetrates the upper part of the aforementioned process cavity (100) and drives it to move up and down; The internal lead section (300) includes: an internal lead (310) that can move up and down in the internal space; and a gas supply flow path (320) that is connected to the processing space (S2) inside the internal lead (310). The substrate processing apparatus further includes: A temperature adjustment unit (1100), provided in the internal lead section (300), adjusts the temperature of the substrate (1) located in the processing space (S2); and The temperature control unit controls the heating or cooling of the temperature regulating unit (1100) mentioned above; During the voltage transformation process in the processing space (S2), the temperature control unit controls the temperature adjustment unit (1100) to keep the temperature of the substrate (1) or the processing space (S2) stable.

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