A semiconductor device and a semiconductor processing method

Abstract

The application provides a semiconductor device and a semiconductor processing method, and relates to the technical field of semiconductor processing. The semiconductor device comprises a reaction chamber, a heating disc arranged in the reaction chamber, and an adsorption hole arranged on the heating disc. A front-stage pipeline is connected to the top of the reaction chamber and connected to a vacuum pump at the bottom. A vacuum adsorption pipeline comprises first to third connecting pipelines, which are connected to the heating disc, the top of the front-stage pipeline and the bottom of the front-stage pipeline, respectively. Through logical control of the first to third valves, the first to third valves are rotated under time sequence control to switch the first to third connecting pipelines to be in a conduction state or a blockage state, so that the residual gas in the vacuum adsorption pipeline is completely exhausted, the vacuum adsorption effect is improved, the phenomenon of unfirm adsorption of a wafer and falling is reduced, the product error rate is reduced, and energy waste is reduced.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and in particular to a semiconductor device and a semiconductor processing method. Background Technology

[0002] A wafer is a silicon wafer used to manufacture silicon semiconductor circuits; its raw material is silicon. High-purity polycrystalline silicon is dissolved, doped with silicon crystal seed crystals, and then slowly pulled out to form a cylindrical single-crystal silicon ingot. After grinding, polishing, and slicing, the silicon ingot is formed into a silicon wafer. On automated semiconductor production lines, wafers are typically mounted on heating plates for further processing to create chips.

[0003] In related technologies, by raising the heating plate to the process position and maintaining low pressure in the reaction chamber, the pipeline connected to the adsorption port on the heating plate and the pumping pipeline connected to the vacuum pump are connected to allow the wafer to be adsorbed on the heating plate, and then the wafer vacuum adsorption is achieved by the pressure difference.

[0004] However, in actual production, the relevant technology has the following shortcomings:

[0005] Existing vacuum adsorption devices occasionally experience problems with unreliable wafer adsorption during operation, leading to wafers falling off, abnormal process results, high product error rates, and wasted energy. Summary of the Invention

[0006] In view of this, the purpose of the present invention is to provide a semiconductor device and a semiconductor processing method to enhance the reliability of vacuum adsorption, reduce product error rate, and reduce energy waste.

[0007] In a first aspect, embodiments of the present invention provide a semiconductor device comprising:

[0008] Reaction chamber;

[0009] A heating plate is disposed in the reaction chamber; the heating plate is provided with adsorption holes;

[0010] The pre-stage pipeline is connected at its top to the reaction chamber and at its bottom to the vacuum pump.

[0011] The vacuum adsorption pipeline includes first to third connecting pipelines; the first to third connecting pipelines are respectively connected to the heating plate, the top end and the bottom end of the pre-stage pipeline; there are two first connecting pipelines, and the two first connecting pipelines are symmetrically arranged with respect to the third connecting pipeline;

[0012] The first to third valves are sequentially installed on the first to third connecting pipelines;

[0013] The first to third valves receive control commands to open or close, thereby enabling or blocking the first to third connecting pipelines.

[0014] As one possible implementation, the semiconductor device further includes:

[0015] The main control device is connected to the first to third valves and is used to control the rotation of the first to third valves to open or close the first to third connecting pipelines.

[0016] As one possible implementation, the semiconductor device further includes:

[0017] The filter is connected to the vacuum adsorption pipeline.

[0018] As one possible implementation, the semiconductor device further includes:

[0019] A spray plate is positioned above the heating plate within the reaction chamber.

[0020] As one possible implementation, the semiconductor device further includes:

[0021] A telescopic mechanism is located at the bottom of the heating plate inside the reaction chamber, and the telescopic mechanism is connected to the main control device.

[0022] As an feasible approach, the first to third valves are all pneumatic valves.

[0023] Secondly, embodiments of the present invention provide a semiconductor processing method, the method being applied to a main control device in a semiconductor device. The semiconductor device includes: a reaction chamber, a heating plate, a pre-stage pipeline, a vacuum adsorption pipeline, first to third valves, and a main control device. The reaction chamber is provided with a heating plate and a spray plate. The vacuum adsorption pipeline includes first to third pipelines communicating with the heating plate and the top and bottom ends of the pre-stage pipeline. First to third valves are provided sequentially on the first to third connecting pipelines. The first to third valves and the spray plate are respectively connected to the main control device. The method includes:

[0024] Send a first control command to the first valve and the second valve to make the first valve and the second valve rotate, thereby connecting the first connecting pipeline and the second connecting pipeline;

[0025] Send a second control command to the first valve and the third valve to make the first valve and the third valve rotate, thereby connecting the first connecting pipeline and the third connecting pipeline;

[0026] A third control command is sent to the spray plate to cause the spray plate to introduce process gas into the reaction chamber until the gas pressure in the reaction chamber reaches a preset threshold.

[0027] As one feasible approach, the step of sending a first control command to the first valve and the second valve to rotate the first valve and the second valve, thereby connecting the first connecting pipeline and the second connecting pipeline, includes:

[0028] The first valve and the second valve rotate simultaneously.

[0029] As one feasible approach, the method is applied to a main control device in a semiconductor device, wherein a telescopic mechanism is connected to the bottom end of a heating plate in the semiconductor device, and the telescopic mechanism is connected to the main control device. Before the step of sending a first control command to a first valve and a second valve to rotate the first valve and the second valve, thereby connecting the first connecting pipe and the second connecting pipe, the method further includes:

[0030] A fourth control command is sent to the telescopic mechanism to extend the mechanism, thereby bringing the heating plate closer to the wafer and preheating the wafer.

[0031] As one feasible approach, the step of sending a second control command to the first valve and the third valve to rotate the first valve and the third valve, thereby connecting the first connecting pipe and the third connecting pipe, includes:

[0032] Send a second control command to the third valve so that the third valve rotates to connect the third connecting pipeline for time t2, and then the first valve rotates to connect the first connecting pipeline for time t3.

[0033] Send a fifth control command to the telescopic mechanism to extend the telescopic mechanism and move the heating plate to the processing station;

[0034] A sixth control command is sent to the first valve and the third valve to simultaneously open the first valve and the third valve to connect the first connecting pipeline and the third connecting pipeline;

[0035] Where t2 is the second preset duration and t3 is the second preset duration.

[0036] The embodiments of the present invention bring the following beneficial effects:

[0037] This invention provides a semiconductor device and a semiconductor processing method. The semiconductor device includes: a reaction chamber; a heating plate disposed within the reaction chamber; the heating plate having adsorption holes; a pre-stage pipe, the top end of which communicates with the reaction chamber, and the bottom end of which is connected to a vacuum pump; a vacuum adsorption pipeline, including first to third connecting pipes; the first to third connecting pipes respectively connect the heating plate, the top end of the pre-stage pipe, and the bottom end; there are two first connecting pipes, symmetrically arranged relative to the third connecting pipe; and first to third valves sequentially disposed on the first to third connecting pipes; wherein the first to third valves receive control commands to open or close, thereby achieving the conduction or blocking of the first to third connecting pipes. Thus, through logical control of the first to third valves, the first to third valves rotate under timed control to switch the conduction or blocking state of the first to third connecting pipes, thereby completely venting residual gas in the vacuum adsorption pipeline, improving the vacuum adsorption effect, reducing the phenomenon of wafers falling off due to unreliable adsorption, reducing product error rate, and reducing energy waste.

[0038] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention are realized and obtained in accordance with the structures particularly pointed out in the description, claims and drawings.

[0039] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0040] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0041] Figure 1 This is a schematic diagram of the vacuum adsorption pipeline structure in a semiconductor device provided in an embodiment of the present invention;

[0042] Figure 2 This is a schematic diagram showing the connection relationship between the main control device and other components in a semiconductor device provided in an embodiment of the present invention;

[0043] Figure 3 This is a schematic diagram of the connection structure between a vacuum adsorption pipeline and a filter in a semiconductor device provided by an embodiment of the present invention;

[0044] Figure 4This is a flowchart of a semiconductor processing method provided in an embodiment of the present invention;

[0045] Figure 5 This is a flowchart of another semiconductor processing method provided in an embodiment of the present invention;

[0046] Figure 6 This is a flowchart of another semiconductor processing method provided in an embodiment of the present invention.

[0047] Figure label:

[0048] First connecting pipe 41, second connecting pipe 42, third connecting pipe 43, first valve 51, second valve 52, third valve 53, main control device 6, filter 7, spray plate 8, telescopic mechanism 9. Detailed Implementation

[0049] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0050] To help those skilled in the art better understand this application, the technology designed in this application will be briefly introduced below.

[0051] The semiconductor product manufacturing process mainly includes wafer fabrication and packaging testing. During the manufacturing process, wafers need to be clamped and fixed.

[0052] Semiconductor manufacturing processes are a combination of four interconnect technologies—thin-film fabrication, imprinting, etching, and doping—that are performed on a silicon wafer to create transistors and thin-film interconnects on a single chip.

[0053] It should be noted that the terms "first," "second," "third," "fourth," etc., used in this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such designations can be interchanged where appropriate so that the embodiments described herein can be implemented in a sequence other than that illustrated or described herein.

[0054] After introducing the technical terms used in this application, the application scenarios and design concepts of the embodiments of this application will be briefly described below.

[0055] In semiconductor manufacturing, a commonly used technique involves using a vacuum adsorption system to hold the wafer in place before processing it into chips. Specifically, the vacuum adsorption system is connected to a heating plate system, allowing the wafer to be held in place by vacuum adsorption. However, gas may not be completely removed from the vacuum adsorption system, leading to poor vacuum adsorption and preventing the wafer from firmly adhering to the heating plate. This results in abnormal process results and a high product error rate.

[0056] To address these technical challenges, this embodiment provides a semiconductor device and semiconductor processing method to enhance the reliability of vacuum adsorption, reduce product error rates, and minimize energy waste.

[0057] Example 1

[0058] Combination Figure 1 As shown, this embodiment provides a semiconductor device, including: a reaction chamber, a heating plate, a pre-stage pipe, a vacuum adsorption pipe, and first to third valves.

[0059] The heating plate is located in the reaction chamber and has adsorption holes.

[0060] The top end of the pre-pipeline is connected to reaction chamber 1, and the bottom end is connected to the vacuum pump.

[0061] The vacuum adsorption pipeline includes first to third connecting pipelines; the first to third connecting pipelines are respectively connected to the heating plate, the top end and the bottom end of the pre-stage pipeline; there are two first connecting pipelines 41, and the two first connecting pipelines 41 are symmetrically arranged with respect to the third connecting pipeline 43.

[0062] The first to third valves are installed sequentially on the first to third connecting pipelines.

[0063] The first to third valves receive control commands to open or close, thereby enabling or blocking the first to third connecting pipelines.

[0064] In this embodiment, the first connecting pipe 41 is connected to the heating plate, the second connecting pipe 42 is connected to the top end of the pre-stage pipe 3, and the third connecting pipe 43 is connected to the bottom end of the pre-stage pipe 3. The two first connecting pipes 41 are respectively placed on both sides of the third connecting pipe 43, and the two first connecting pipes 41 are symmetrically arranged with respect to the third connecting pipe 43. In this way, the gas distribution in the vacuum adsorption pipeline is uniform, reducing the time difference of wafer desorption on the heating plate during wafer desorption, and the gas in the vacuum adsorption pipeline can be released uniformly, thereby reducing the residual gas from the previous process in the vacuum adsorption pipeline, and thus improving the vacuum adsorption effect.

[0065] like Figure 2As shown, the semiconductor device provided in this embodiment includes: a reaction chamber, a heating plate, a pre-stage pipeline, a vacuum adsorption pipeline, first to third valves, and a main control device 6.

[0066] In this embodiment, the main control device 6 is connected to the first to third valves and is used to control the rotation of the first to third valves, thereby opening or blocking the first to third connecting pipelines.

[0067] In this embodiment, a heating plate is disposed within the reaction chamber, and an adsorption hole is formed on the heating plate. One end of the first connecting pipe 41 is connected to the adsorption hole on the heating plate, and the other end of the first connecting pipe 41 is connected to the second to third connecting pipes. A first valve 51 is provided on the first connecting pipe 41, and the first valve 51 is connected to the main control device 6. It rotates under the control command of the main control device 6 to open or close the first connecting pipe 41.

[0068] The top end of the pre-pipeline 3 is connected to the reaction chamber, and the bottom end is connected to the vacuum pump. The top and bottom ends of the pre-pipeline 3 are also connected to the second connecting pipe 42 and the third connecting pipe 43, respectively. A second valve 52 is installed on the second connecting pipe 42, and a third valve 53 is installed on the third connecting pipe 43. The second valve 52 and the third valve 53 are electrically connected to the main control device 6. Under the control of the main control device 6, the second valve 52 and the third valve 53 rotate to open or close the second connecting pipe 42 and the third connecting pipe 43.

[0069] In this way, the main control device 6 controls the opening and closing sequence of the first to third valves, so that the gas in the vacuum adsorption pipeline is evenly distributed and the gas from the previous process is completely extracted to form a vacuum state, thereby improving the vacuum adsorption effect, reducing the occurrence of abnormal process results, and thus improving the yield.

[0070] Combination Figure 3 As shown, the semiconductor device includes: a reaction chamber, a heating plate, a pre-stage pipeline, a vacuum adsorption pipeline, first to third valves 5, a main control device 6, and a filter 7.

[0071] In this embodiment, filter 7 is connected to the vacuum adsorption pipeline. Filter 7 can adsorb and filter process byproducts in the vacuum adsorption pipeline, thereby reducing the accumulation of process byproducts in the vacuum adsorption pipeline, reducing the possibility of valve leakage, and thus improving the vacuum adsorption effect and reducing the occurrence of abnormal process results.

[0072] Optionally, the semiconductor device also includes a spray plate 8.

[0073] The spray plate 8 is positioned above the heating plate inside the reaction chamber. The spray plate 8 is connected to the main control device 6. Under the control of the main control device 6, the spray plate 8 introduces process gas into the reaction chamber.

[0074] Optionally, the semiconductor device further includes: a telescopic mechanism 9.

[0075] The telescopic mechanism 9 is located at the bottom of the heating plate inside the reaction chamber. The telescopic mechanism 9 is connected to the main control device 6. Under the control of the main control device 6, the telescopic mechanism 9 extends or retracts, causing the heating plate to rise or fall.

[0076] Optionally, the first to third valves 5 are all pneumatic valves.

[0077] A second aspect of this invention provides a semiconductor processing method applied to a main control device 6 in a semiconductor apparatus. The semiconductor apparatus includes a reaction chamber, a heating plate, a pre-stage pipeline, a vacuum adsorption pipeline, first to third valves 5, and the main control device 6. The reaction chamber is equipped with a heating plate and a spray plate 8. The vacuum adsorption pipeline includes first to third connecting pipelines 41, 42, and 43, which are interconnected. The first connecting pipeline 41 is connected to the heating plate 2, and the second and third connecting pipelines 42 and 43 are respectively connected to the top and bottom ends of the pre-stage pipeline. A first valve 51 is disposed on the first connecting pipeline 41. A second valve 52 is disposed on the second connecting pipeline 42. A third valve 53 is disposed on the third connecting pipeline 43. The first valve 51, second valve 52, and third valve 53 are respectively connected to the main control device 6.

[0078] Combination Figure 4 As shown, in this embodiment, the semiconductor processing method includes the following steps:

[0079] S110, send a first control command to the first valve and the second valve to make the first valve and the second valve rotate, thereby connecting the first connecting pipeline and the second connecting pipeline.

[0080] S120, send a second control command to the first valve and the third valve to make the first valve and the third valve rotate, thereby connecting the first connecting pipeline and the third connecting pipeline.

[0081] S130, a third control command is sent to the spray plate to cause the spray plate to introduce process gas into the reaction chamber until the gas pressure in the reaction chamber reaches a preset threshold.

[0082] In step S110 of this embodiment, the first connecting pipe 41 and the second connecting pipe 42 are connected. The first connecting pipe 41 is connected to the heating plate and the second connecting pipe 42 is connected to the front-end pipe. This releases the gas remaining from the previous process in the vacuum adsorption pipe, releases the pressure in the vacuum adsorption pipe, and maintains the background pressure in the reaction chamber.

[0083] In step S120 of this embodiment, the first connecting pipe 41 and the third connecting pipe 43 are connected. The first connecting pipe 41 is connected to the heating plate, and the third connecting pipe 43 is connected to the bottom end of the front-stage pipe, thereby completely connecting the pipe between the vacuum adsorption pipe and the vacuum pump, so that the vacuum adsorption pipe is in a vacuum state, thereby generating an adsorption force on the bottom surface of the wafer.

[0084] In step S130 of this embodiment, the spray plate 8 introduces process gas into the reaction chamber, causing the gas pressure inside the reaction chamber to reach a set threshold. The gas inside the reaction chamber applies pressure to the outer surface of the wafer. The lower surface of the wafer is adsorbed onto the heating plate, while the upper surface is subjected to the pressure from the gas pressure inside the reaction chamber, thereby ensuring that the wafer can be firmly adsorbed onto the heating plate and improving the reliability of vacuum adsorption.

[0085] Optionally, the step of sending a first control command to the first valve 51 and the second valve 52 to cause the first valve 51 and the second valve 52 to rotate and connect the first connecting pipe 41 and the second connecting pipe 42 includes:

[0086] The first valve 51 and the second valve 52 rotate simultaneously. The second valve is used for desorption.

[0087] In this embodiment, the simultaneous rotation of the first valve 51 and the second valve 52 can quickly open the vacuum adsorption pipeline.

[0088] The pressure inside is released quickly.

[0089] Combination Figure 5 As shown, the semiconductor processing method provided in this embodiment is applied to the main control device 6 of a semiconductor device. A telescopic mechanism 9 is connected to the bottom end of the heating plate in the semiconductor device. The telescopic mechanism 9 is connected to the main control device 6. The method includes the following steps:

[0090] S210, the main control device 6 sends a fourth control command to the telescopic mechanism 9 to extend the telescopic mechanism, thereby bringing the heating plate closer to the wafer and preheating the wafer.

[0091] S220, the main control device 6 sends a first control command to the first valve 51 and the second valve 52 to make the first valve 51 and the second valve 52 rotate and connect the first connecting pipe 41 and the second connecting pipe 42.

[0092] S230, the main control device 6 sends a second control command to the first valve 51 and the third valve 53 to make the first valve 51 and the third valve 53 rotate and connect the first connecting pipe 41 and the third connecting pipe 43.

[0093] S240, the main control device 6 sends a third control command to the spray plate 8 to cause the spray plate 8 to introduce process gas into the reaction chamber until the gas pressure in the reaction chamber reaches a preset threshold.

[0094] In this embodiment, the main control device 6 first controls the extension mechanism 9 to extend, thereby raising the height of the heating plate and bringing it closer to the wafer to preheat the wafer. This results in a smaller temperature difference between the heating plate and the bottom surface of the wafer, which helps to improve the vacuum adsorption effect.

[0095] Under normal operating conditions, the gas pressure inside the reaction chamber is 20-200 torr.

[0096] Optionally, combined Figure 6 The step S230 shown also specifically includes:

[0097] S231, the main control device 6 sends a second control command to the third valve 53 so that after the third valve 53 rotates to connect the third connecting pipeline 43t2 for a period of time, the first valve 51 rotates to connect the first connecting pipeline 41t3 for a period of time.

[0098] In step S231, the connecting pipe between the vacuum adsorption pipe and the vacuum pump is first connected by the third connecting pipe 43. The vacuum pump then evacuates the air from this connected pipe to a vacuum state within time t3. Subsequently, the connecting pipe between the vacuum adsorption pipe and the heating plate is connected, thereby evacuating the pipe between the adsorption hole on the heating plate and the vacuum adsorption pipe to a vacuum state.

[0099] S232, the main control device 6 sends a fifth control command to the telescopic mechanism 9, causing the telescopic mechanism 9 to extend and move the heating plate to the processing station.

[0100] In step S232, the heating plate is raised to the processing station. At this time, the connecting pipe 41 between the heating plate and the vacuum adsorption pipe is in a vacuum state. In this way, the wafer can be adsorbed onto the heating plate.

[0101] S233, send a sixth control command to the first valve 51 and the third valve 53, and simultaneously open the first valve 51 and the third valve 53 to connect the first connecting pipe 41 and the third connecting pipe 43.

[0102] After the wafer is adsorbed onto the heating plate, the main control device 6 sends a sixth control command to the first valve 51 and the third valve 53, simultaneously opening the first valve 51 and the third valve 53. This reconnects the heating plate, the first connecting pipe 41, the third connecting pipe 43, and the vacuum pump, thereby further removing air from the vacuum adsorption pipeline and creating a deeper vacuum, thus improving the vacuum adsorption effect.

[0103] Wherein, t2 is the second preset time and t3 is the third preset time. After a large number of experiments, it was found that the vacuum adsorption effect can be better improved when the values ​​of t2 and t3 are in the range of (5s, 10s).

[0104] In summary, the semiconductor processing method provided in this embodiment improves the vacuum adsorption effect by controlling the timing of the first to third valves, thereby reducing the occurrence of abnormal conditions in the wafer processing and improving the reliability and effectiveness of the processing work.

[0105] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the system and apparatus described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0106] Furthermore, in the description of the embodiments of the present invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the present invention based on the specific circumstances.

[0107] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this invention, essentially, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0108] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0109] Finally, it should be noted that the above embodiments are merely specific implementations of the present invention, used to illustrate the technical solutions of the present invention, and not to limit it. The scope of protection of the present invention is not limited thereto. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art can still modify or easily conceive of changes to the technical solutions described in the foregoing embodiments within the technical scope disclosed in the present invention, or make equivalent substitutions for some of the technical features; and these modifications, changes, or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A semiconductor device, characterized in that, include: Reaction chamber; A heating plate is disposed in the reaction chamber; the heating plate is provided with adsorption holes; The pre-stage pipeline is connected at its top to the reaction chamber and at its bottom to the vacuum pump. The vacuum adsorption pipeline includes first to third connecting pipelines; the first to third connecting pipelines are respectively connected to the heating plate, the top end and the bottom end of the pre-stage pipeline; there are two first connecting pipelines, and the two first connecting pipelines are symmetrically arranged with respect to the third connecting pipeline; The first to third valves are sequentially installed on the first to third connecting pipelines; The main control device is connected to the first to third valves and is used to control the rotation of the first to third valves to open or close the first to third connecting pipelines. The main control device sends a first control command to the first valve and the second valve to make the first valve and the second valve rotate, thereby connecting the first connecting pipeline and the second connecting pipeline; Send a second control command to the first valve and the third valve to make the first valve and the third valve rotate, thereby connecting the first connecting pipeline and the third connecting pipeline; The first to third valves are used to rotate under time control to switch the first to third connecting pipelines to be open or closed, thereby completely venting the residual gas in the vacuum adsorption pipeline.

2. The semiconductor device according to claim 1, characterized in that, The semiconductor device further includes: The filter is connected to the vacuum adsorption pipeline.

3. The semiconductor device according to claim 1, characterized in that, The semiconductor device further includes: A spray plate is positioned above the heating plate within the reaction chamber.

4. The semiconductor device according to claim 1, characterized in that, The semiconductor device further includes: A telescopic mechanism is located at the bottom of the heating plate inside the reaction chamber, and the telescopic mechanism is connected to the main control device.

5. The semiconductor device according to claim 1, characterized in that, The first to third valves are all pneumatic valves.

6. A semiconductor processing method, characterized in that, The method is applied to a main control device in a semiconductor device, the semiconductor device including: a reaction chamber, a heating plate, a pre-stage pipeline, a vacuum adsorption pipeline, first to third valves, and a main control device. The reaction chamber is equipped with a heating plate and a spray plate. The vacuum adsorption pipeline includes first to third pipelines communicating with the heating plate and the top and bottom ends of the pre-stage pipeline. First to third valves are sequentially installed on the first to third connecting pipelines. The first to third valves and the spray plate are respectively connected to the main control device. The method includes: Step 1: Send a first control command to the first valve and the second valve to make the first valve and the second valve rotate, and open the first connecting pipeline and the second connecting pipeline to release the gas and pressure remaining in the vacuum adsorption pipeline from the previous process, and maintain the background pressure in the reaction chamber; Step 2: Send a second control command to the first valve and the third valve to make the first valve and the third valve rotate, connect the first connecting pipe and the third connecting pipe, and completely connect the pipe between the vacuum adsorption pipe and the vacuum pump, so that the vacuum adsorption pipe is in a vacuum state, thereby generating an adsorption force on the bottom surface of the wafer. Step 3: Send a third control command to the spray plate to introduce process gas into the reaction chamber until the gas pressure in the reaction chamber reaches a preset threshold, so that the gas in the reaction chamber applies pressure to the outer surface of the wafer, and firmly adsorbs the wafer onto the heating plate.

7. The semiconductor processing method according to claim 6, characterized in that, The step of sending a first control command to the first valve and the second valve to cause the first valve and the second valve to rotate and connect the first connecting pipeline and the second connecting pipeline includes: The first valve and the second valve rotate simultaneously.

8. The semiconductor processing method according to claim 6, applied to a main control device in a semiconductor device, wherein a telescopic mechanism is connected to the bottom end of the heating plate in the semiconductor device, and the telescopic mechanism is connected to the main control device, characterized in that, Before the step of sending a first control command to the first valve and the second valve to cause the first valve and the second valve to rotate and connect the first connecting pipeline and the second connecting pipeline, the method further includes: A fourth control command is sent to the telescopic mechanism to extend the mechanism, thereby bringing the heating plate closer to the wafer and preheating the wafer.

9. The semiconductor processing method according to claim 8, characterized in that, The step of sending a second control command to the first valve and the third valve to cause the first valve and the third valve to rotate and connect the first connecting pipeline and the third connecting pipeline includes: Send a second control command to the third valve so that the third valve rotates to connect the third connecting pipeline for time t2, and then the first valve rotates to connect the first connecting pipeline for time t3. Send a fifth control command to the telescopic mechanism to extend the telescopic mechanism and move the heating plate to the processing station; A sixth control command is sent to the first valve and the third valve to simultaneously open the first valve and the third valve to connect the first connecting pipeline and the third connecting pipeline; Where t2 is the second preset duration and t3 is the second preset duration.

Images