A broadband non-reciprocal wave-transmitting electromagnetic surface

Abstract

The present invention relates to a broadband non-reciprocal wave-transmitting electromagnetic surface, which is composed of a periodic arrangement of a plurality of broadband non-reciprocal wave-transmitting units with the same structure; the broadband non-reciprocal wave-transmitting unit is formed by cascading an upper broadband antenna unit, a broadband unidirectional circuit, and a lower broadband antenna unit; the upper broadband antenna unit and the lower broadband antenna unit are horizontally arranged, with the same structure, the same polarization, opposite radiation directions, and opposite receiving directions, and both have broadband transceiver characteristics; the broadband unidirectional circuit is in a vertical structure and is located between the upper broadband antenna unit and the lower broadband antenna unit, and includes a circuit layer, a metal via hole group, a first dielectric layer, a metal interlayer, a second dielectric layer, an enable control line, and a bias control line; in the working state, it has amplitude non-reciprocal transmission characteristics for the electromagnetic waves received by the upper broadband antenna unit and the lower broadband antenna unit respectively, realizing non-reciprocal wave-transmitting transmission of electromagnetic waves. The present invention can meet the applications such as unidirectional electromagnetic shielding, anti-interference, and stealth radar radome.

Description

Technical Field

[0001] The present invention belongs to the field of communication technologies, and further relates to a broadband non-reciprocal wave-transmitting electromagnetic surface in the field of electromagnetic fields and microwave technologies, which can be used in applications such as one-way electromagnetic shielding, anti-interference, and all-band stealth radar radomes. Background Art

[0002] Traditional radar radomes are usually electromagnetic reciprocal at the operating frequency and have the same frequency response characteristics for receiving and radiating electromagnetic waves. Due to the different frequency response characteristics of non-reciprocal wave-transmitting electromagnetic surfaces for co-polarized incident electromagnetic waves from both sides, they can achieve the function of a spatial electromagnetic one-way valve, and thus have broad prospects in applications such as anti-interference, one-way electromagnetic shielding, all-band electromagnetic stealth, and full-duplex communication systems. The non-reciprocal transmission of electromagnetic waves must break the time-reversal symmetry. At present, the implementation methods of non-reciprocal wave-transmitting electromagnetic surfaces can be divided into four categories: The first is to use magnetic materials based on ferrite loading, and utilize the Faraday rotation effect of magnetic materials under a specific magnetic field to change the polarization characteristics of electromagnetic waves, thereby breaking the time-reversal symmetry to achieve non-reciprocal wave transmission. However, the characteristics of magnetic materials being bulky, having large losses, and being difficult to control limit their applications; The second is to use nonlinear materials. Such materials have electromagnetic parameters such as dielectric constant and magnetic permeability that change asymmetrically in the propagation direction of electromagnetic waves, and can achieve non-reciprocal wave transmission when the power of electromagnetic waves is relatively large. Their large size and high power requirements limit their applications; The third is to use spatio-temporal modulation surfaces. Based on active frequency selective surfaces, radio frequency signals are loaded into the bias network to introduce a non-linear source to change the spectral characteristics of incident electromagnetic waves, thereby breaking the time-reversal symmetry and achieving non-reciprocal transmission of electromagnetic waves. However, problems such as difficulty in synchronization and narrow operable frequency bands limit their applications; The fourth is to load transistors. Transistors themselves have the one-way transmission characteristics of electromagnetic waves. Therefore, the Faraday rotation effect of magnetic materials can be simulated by loading transistors, or the "antenna-transistor circuit-antenna" unit can be constructed to achieve non-reciprocal transmission of electromagnetic waves. The non-reciprocal wave-transmitting electromagnetic surface based on the "antenna-transistor circuit-antenna" unit has the advantages of being non-magnetic, non-rotating, having a simple structure, and being easy to implement. In practical applications, radars and communication systems mostly operate in a broadband range. Therefore, it is necessary to design an electromagnetic surface with stable broadband non-reciprocal wave-transmitting characteristics. However, the related designs proposed so far can only operate in a low-frequency narrow band range and cannot achieve stable broadband non-reciprocal wave transmission in a higher frequency band, thus limiting their practical applications. Summary of the Invention

[0003] In order to overcome the above-mentioned disadvantages of the existing technologies and fill the gap in the broadband design field of non-reciprocal wave-transmitting electromagnetic surfaces, an electromagnetic surface with broadband non-reciprocal wave-transmitting characteristics is proposed, aiming to solve the problem that the existing non-reciprocal electromagnetic structures cannot maintain stable non-reciprocal transmission performance in the high-frequency broadband range, and can meet applications such as one-way electromagnetic shielding, anti-interference, and all-band stealth radar radomes.

[0004] In order to achieve the above object, the technical solution adopted in the present invention is as follows:

[0005] A broadband non-reciprocal wave-transmitting electromagnetic surface is composed of a plurality of broadband non-reciprocal wave-transmitting units with the same structure arranged periodically;

[0006] The broadband non-reciprocal wave-transmitting unit is formed by cascading an upper broadband antenna unit, a broadband unidirectional circuit, and a lower broadband antenna unit;

[0007] The upper broadband antenna unit and the lower broadband antenna unit are horizontally arranged, with the same structure, the same polarization, opposite radiation directions, and opposite receiving directions, and both have broadband transceiver characteristics; the broadband unidirectional circuit is a vertical structure and is located between the upper broadband antenna unit and the lower broadband antenna unit, and includes a circuit layer, a metal via hole group, a first dielectric layer, a metal sandwich layer, a second dielectric layer, an enable control line, and a bias control line; in the working state, it has amplitude non-reciprocal transmission characteristics for the electromagnetic waves received by the upper broadband antenna unit and the lower broadband antenna unit respectively, and realizes non-reciprocal wave transmission of electromagnetic waves.

[0008] In one embodiment, the upper broadband antenna unit includes an upper radiation patch, an upper dielectric substrate, an upper metal backplane, and upper metallized vias;

[0009] The upper radiation patch is printed on the upper surface of the upper dielectric substrate and is connected to the upper metallized vias penetrating the dielectric substrate; the upper metal backplane is printed on the lower surface of the dielectric substrate, and there is a circular pore with the same axis and a radius slightly larger than the metallized via at the position of the upper metallized via.

[0010] In one embodiment, the lower broadband antenna unit includes a lower radiation patch, a lower dielectric substrate, a lower metal backplane, and lower metallized vias;

[0011] The lower radiation patch is printed on the lower surface of the lower dielectric substrate and is connected to the lower metallized vias penetrating the lower dielectric substrate; the lower metal backplane is printed on the upper surface of the lower dielectric substrate, and there is a circular pore with the same axis and a radius slightly larger than the metallized via at the position of the lower metallized via.

[0012] In one embodiment, the circuit layer includes an upper microstrip transmission line, a lower microstrip transmission line, a broadband unidirectional amplifier circuit, an enable connection line, a bias connection line, and a metal coating;

[0013] The lower end of the upper microstrip transmission line is connected to the input end of the broadband unidirectional amplification circuit, and the upper end is connected to the upper metallized via and not connected to the upper metal backplane; the upper end of the lower microstrip transmission line is connected to the output end of the broadband unidirectional amplification circuit, and the lower end is connected to the lower metallized via and not connected to the lower metal backplane; one end of the enable connection line is connected to the enable end of the broadband unidirectional amplification circuit, and the other end is connected to the enable control line through a metallized via penetrating the first dielectric layer; one end of the bias connection line is connected to the bias end of the broadband unidirectional amplification circuit, and the other end is connected to the bias control line through a metallized via penetrating the second dielectric layer;

[0014] The upper microstrip transmission line, the lower microstrip transmission line, the broadband unidirectional amplification circuit, the enable connection line and the bias connection line are connected to form a combination; there is a gap between the metal cladding and the combination, and at the edge near it, it is connected to the metal interlayer through a group of metal grounding vias penetrating the first dielectric layer to ensure the stable transmission of broadband signals. The upper and lower ends of the metal cladding are also respectively fully connected to the upper metal backplane and the lower metal backplane.

[0015] In one embodiment, the metal interlayer has circular pores with coincident centers and a radius slightly larger than the metallized via at the metallized vias connecting the enable connection line and the bias connection line and at the metallized vias connecting the enable control line and the bias control line.

[0016] In one embodiment, an enable voltage Ven is applied between the enable control line and the ground plane to control the switching state of the broadband unidirectional amplification circuit. The value of Ven is related to the model of the broadband unidirectional amplification circuit. For example, when the model of the broadband unidirectional amplification circuit is GRF2710, the value of Ven needs to be greater than 1.8V.

[0017] In one embodiment, a bias voltage Vdd is applied between the bias control line and the ground plane to control the non-reciprocal transmission characteristic of the broadband unidirectional amplification circuit. The value of Vdd is related to the model of the broadband unidirectional amplification circuit. For example, when the model of the broadband unidirectional amplification circuit is GRF2710, the value of Vdd is 0 to 6V.

[0018] In one embodiment, the broadband unidirectional circuits of adjacent units whose centers are on the same straight line in the broadband non-reciprocal wave-transmitting unit are rotated around the centers of the upper metallized via and the lower metallized via so that they are placed parallel to this straight line, and then the first dielectric layer, the metal interlayer, the second dielectric layer, the enable control line and the bias control line are extended to be connected to the adjacent units, reducing the feeding difficulty.

[0019] In one embodiment, the broadband unidirectional circuit has a unidirectional amplification effect on the electromagnetic waves received by the upper broadband antenna unit and a reflection and absorption effect on the electromagnetic waves received by the lower broadband antenna unit.

[0020] In one embodiment, the broadband unidirectional circuit is placed parallel to the polarization direction of the upper broadband antenna unit and the lower broadband antenna unit.

[0021] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0022] First, since the broadband non-reciprocal wave-transmitting unit in the present invention uses a broadband antenna unit and a broadband amplifier circuit as devices for transmitting and receiving and unidirectionally non-reciprocally transmitting electromagnetic waves, through the design of a modular split connection structure, the coupling effect between the broadband antenna unit and the broadband amplifier circuit is reduced, overcoming the problem of low forward and reverse transmission isolation in the broadband range of the non-reciprocal wave-transmitting structure in the prior art, so that the present invention has the advantage of high-isolation non-reciprocal wave-transmitting of electromagnetic waves in the broadband range.

[0023] Second, since the broadband amplifier circuit in the present invention adopts a multi-layer structure of a circuit layer, a metal interlayer, and an enabling and bias control layer, the circuit layer and the bias control layer are separated by the metal interlayer to reduce the influence of the control line on the transmission characteristics of the circuit layer, and a metal ground hole group is used to prevent electromagnetic wave leakage and maintain stable broadband transmission performance, so that the present invention has the advantage of stable broadband low-loss forward transmission characteristics of electromagnetic waves in the broadband range.

[0024] Third, since the broadband non-reciprocal wave-transmitting unit in the present invention adopts a cascaded plug-in structure along the direction of electromagnetic wave propagation, it can be split into low-mutual-coupling modules of a broadband antenna unit and a vertical broadband amplifier circuit for independent design, and the overall size is only determined by the size of the broadband antenna unit, so that the present invention has the advantages of a compact structure and easy design. Brief Description of the Drawings

[0025] Figure 1 It is an overall structure diagram of the broadband non-reciprocal wave-transmitting electromagnetic surface and a structural decomposition diagram of the broadband non-reciprocal wave-transmitting unit of the present invention.

[0026] Figure 2 It is a schematic structural diagram of the upper broadband antenna unit of the present invention, where (a) is a three-dimensional view, and (b) are a top view, a bottom view, and a side view.

[0027] Figure 3 It is a schematic structural diagram of the lower broadband antenna unit of the present invention.

[0028] Figure 4 It is a schematic structural diagram of the broadband unidirectional circuit of the present invention, where (a) is a three-dimensional view, and (b) are a top view, a bottom view, and a side view.

[0029] Figure 5 It is a schematic diagram of the feeding method of the present invention.

[0030] Figure 6It is the curve graph of the forward and reverse transmission coefficients in the simulation experiment of the embodiment of the present invention. Specific embodiments

[0031] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings and embodiments.

[0032] Refer to Figure 1 to further describe in detail the overall structure of the electromagnetic surface of the present invention.

[0033] In the embodiment of the present invention, the electromagnetic surface is composed of a plurality of broadband non-reciprocal wave-transmitting units 1 arranged in a periodic manner with the same structure. Each broadband non-reciprocal wave-transmitting unit 1 is cascaded by an upper broadband antenna unit 11, a broadband unidirectional circuit 12, and a lower broadband antenna unit 13. Among them, the upper broadband antenna unit 11 and the lower broadband antenna unit 13 are parallel, they have the same structure, the same polarization, opposite radiation / reception directions, and both have broadband transceiver characteristics. The broadband unidirectional circuit 12 is a vertical structure, located between the upper broadband antenna unit 11 and the lower broadband antenna unit 13, and is vertically placed, including a circuit layer 121, a metal ground hole group 122, a first dielectric layer 123, a metal interlayer 124, a second dielectric layer 125, an enable control line 126, and a bias control line 127. In the working state, it has different transmission characteristics for the electromagnetic waves received by the upper broadband antenna unit 11 and the lower broadband antenna unit 13 respectively, realizing non-reciprocal wave-transmitting transmission of electromagnetic waves, and can meet the applications such as unidirectional electromagnetic shielding, anti-interference, and stealth radar radome. The broadband unidirectional circuit 12 adopted in this embodiment has a unidirectional amplification effect on the electromagnetic waves received by the upper broadband antenna unit 11, and has a reflection and absorption effect on the electromagnetic waves received by the lower broadband antenna unit 13.

[0034] In an embodiment of the present invention, the broadband unidirectional circuits 12 of adjacent units whose centers of the broadband non-reciprocal wave-transmitting units 1 are on the same straight line are rotated around the feeding centers of the upper broadband antenna unit 11 and the lower broadband antenna unit 13 so that they are placed parallel to this straight line, and then the first dielectric layer 123, the metal interlayer 124, the second dielectric layer 125, the enable control line 126, and the bias control line 127 are extended to be connected to adjacent units, reducing the feeding difficulty of the control lines. The broadband unidirectional circuit 12 in this embodiment is placed parallel to the polarization direction of the upper and lower broadband antenna units.

[0035] Refer to Figure 2As shown in (a) and (b) thereof, the upper broadband antenna unit 11 includes an upper radiation patch 111, an upper dielectric substrate 112, an upper metal backplane 113 and an upper metallized via 114. Exemplarily, it is a broadband patch antenna loaded with a U-shaped slot, and the unit size is w×l = 11 mm×11 mm. The upper radiation patch 111 is a U-shaped slot etched on a rectangular patch, with a width s = 0.2 mm, and other structural parameters are: length l0 = 8.7 mm, width w0 = 6.5 mm, bottom length l1 of the U-shaped slot = 4.3 mm, arm length w1 of the U-shaped slot = 4 mm, printed on the upper surface of the upper dielectric substrate 112, and connected to the upper metallized via 114 with a radius of rf = 0.35 mm passing through the dielectric substrate 112. The distance between the metallized via 114 and the lower end of the upper broadband antenna unit 11 is lf = 5.05 mm; the upper metal backplane 113 is printed on the lower surface of the upper dielectric substrate 112, and there is a circular pore with a radius of rv = 1.2 mm and coincident axes at the position of the upper metallized via 114. The upper dielectric substrate 112 uses a dielectric substrate with a thickness of h = 2.032 mm, a dielectric constant of ε r = 3.55 and a loss tangent of tanδ = 0.0027.

[0036] Referring to Figure 3 As shown, the lower broadband antenna unit 13 includes a lower radiation patch 131, a lower dielectric substrate 132, a lower metal backplane 133 and a lower metallized via 134. Among them, the lower radiation patch 131 is printed on the lower surface of the lower dielectric substrate 132 and connected to the lower metallized via 134 passing through the lower dielectric substrate 132; the lower metal backplane 133 is printed on the upper surface of the lower dielectric substrate 132, and there is a circular pore with a radius slightly larger than that of the metallized via and coincident axes at the position of the lower metallized via 134. In this embodiment, the structural dimensions of the lower broadband antenna unit 13 and the upper broadband antenna unit 11 are the same, and the radiation directions are opposite.

[0037] The centers of the upper metallized via 114 and the lower metallized via 134 are the feeding centers of the upper broadband antenna unit 11 and the lower broadband antenna unit 13 respectively.

[0038] Refer to Figure 4As shown in (a) and (b) therein, the circuit layer 121 includes an upper microstrip transmission line 1211, a lower microstrip transmission line 1212, a broadband unidirectional amplifier circuit 1213, an enable connection line 1214, a bias connection line 1215, and a metal cladding 1216. Among them, the width of the upper microstrip transmission line 1211 is ws = 1.1 mm, the lower end is connected to the input end of the broadband unidirectional amplifier circuit 1213, the upper end is connected to the upper metallized via 114 and is not connected to the upper metal backplane 113; the width of the lower microstrip transmission line 1212 is also ws = 1.1 mm, the upper end is connected to the output end of the broadband unidirectional amplifier circuit 1213, and the lower end is connected to the lower metallized via 134 and is not connected to the lower metal backplane 133; one end of the enable connection line 1214 and the bias connection line 1215 are respectively connected to the enable end and the bias end of the broadband unidirectional amplifier circuit 1213, and the other end is respectively connected to the enable control line 126 and the bias control line 127 through the metallized vias penetrating the first dielectric layer 123 and the second dielectric layer 125. The first and second dielectric layers are both dielectric substrates with a thickness of h1 = 0.508 mm, a dielectric constant of ε r = 3.55, and a loss tangent of tanδ = 0.0027.

[0039] The upper microstrip transmission line 1211, the lower microstrip transmission line 1212, the broadband unidirectional amplifier circuit 1213, the enable connection line 1214, and the bias connection line 1215 are connected to form a combination, and there is a gap between the metal cladding 1216 and the combination. Specifically, there is a gap of g = 0.6 mm between the metal cladding 1216 and the upper microstrip transmission line 1211 and the lower microstrip transmission line 1212, a gap of g0 = 0.2 mm between the metal cladding 1216 and the enable connection line 1214 and the bias connection line 1215, and at a distance of d = 0.3 mm from its edge and inside, it is connected to the metal interlayer 124 through a metal ground hole group 122 with a radius of r = 0.15 mm and a center distance of s = 0.5 mm penetrating the first dielectric layer 123 to ensure the stable transmission of broadband signals. The upper and lower ends of the metal cladding 1216 are also fully connected to the upper metal backplane 113 and the lower metal backplane 133 respectively, and the overall height is h2 = 11 mm.

[0040] Among them, the metal interlayer 124 has circular pores with coincident axes and a radius slightly larger than the metallized vias at the metallized vias connecting the enable connection line 1214 and the bias connection line 1215 and at the metallized vias connecting the enable control line 126 and the bias control line 127.

[0041] Reference Figure 5, an enabling voltage Ven is loaded between the enabling control line 126 and the metal cladding 1216 to control the switching state of the broadband unidirectional amplification circuit 1213. The value of Ven is related to the model of the broadband unidirectional amplification circuit 1213. In this embodiment, a unidirectional amplification circuit based on the GRF2710 low-noise amplifier chip is adopted, and the value of Ven is 5V; an enabling voltage Vdd is loaded between the bias control line 127 and the metal cladding 1216 to control the non-reciprocal transmission characteristic of the broadband unidirectional amplification circuit 1213, and the value of Vdd is 2.9V.

[0042] The technical effects of the present invention are further described below in combination with simulation experiments:

[0043] The S-parameter curves obtained by modeling and simulating the embodiment of the present invention using the commercial simulation software CST Studio Suite 2020 are as Figure 6 shown. Figure 6 The abscissa in is the frequency value, the unit is GHz, and the ordinate is the S parameter, the unit is dB. Figure 6 The black solid line in is the forward transmission coefficient |S 21 | curve, and the black dashed line is the reverse transmission coefficient |S 12 |. It can be seen that the embodiment of the present invention has a non-reciprocal wave transmission characteristic of |S 21 |≠|S 12 | within the broadband range, and the forward transmission coefficient |S 21 | remains within the range of 12.57 to 13.57 dB within the range of 9.09 GHz to 11.28 GHz, the variation range is within 1 dB, and the reverse transmission coefficient |S 12 | remains within the range of -30.5 to -27.9 dB, and the forward and reverse wave isolation is greater than 40 dB, having a stable broadband high-isolation non-reciprocal wave transmission characteristic.

[0044] Although the specific implementation manners of the present invention have been described in detail with reference to the accompanying drawings, it should not be construed as a limitation on the protection scope of this patent. Within the scope described in the claims, various modifications and deformations that can be made by those skilled in the art without creative efforts still belong to the protection scope of this patent.

[0045] The above is only a preferred embodiment of the present invention, and does not make any form of limitation to the present invention. Any simple modification and equivalent change made to the above embodiments according to the technical essence of the present invention all fall within the protection scope of the present invention.

Claims

1. A broadband non-reciprocal wave-transmitting electromagnetic surface, characterized in that, It is composed of a periodic arrangement of multiple broadband non-reciprocal wave-transmitting units (1) with the same structure; The broadband non-reciprocal wave-transmitting unit (1) is cascaded by an upper broadband antenna unit (11), a broadband unidirectional circuit (12), and a lower broadband antenna unit (13); The upper broadband antenna unit (11) and the lower broadband antenna unit (13) are horizontally arranged, with the same structure, the same polarization, opposite radiation directions, and opposite receiving directions, and both have broadband transceiver characteristics; the broadband unidirectional circuit (12) is a vertical structure, located between the upper broadband antenna unit (11) and the lower broadband antenna unit (13), and includes a circuit layer (121), a metal grounding hole group (122), a first dielectric layer (123), a metal interlayer (124), a second dielectric layer (125), an enable control line (126), and a bias control line (127); in the working state, it has amplitude non-reciprocal transmission characteristics for the electromagnetic waves received by the upper broadband antenna unit (11) and the lower broadband antenna unit (13), respectively, and realizes non-reciprocal wave-transmitting transmission of electromagnetic waves; The upper broadband antenna unit (11) includes an upper radiation patch (111), an upper dielectric substrate (112), an upper metal backplane (113), and an upper metallized via hole (114); The upper radiation patch (111) is printed on the upper surface of the upper dielectric substrate (112) and is connected to the upper metallized via hole (114) passing through the dielectric substrate (112); the upper metal backplane (113) is printed on the lower surface of the dielectric substrate (112), and there is a circular pore with the same axis and a radius slightly larger than the metallized via hole at the upper metallized via hole (114); The lower broadband antenna unit (13) includes a lower radiation patch (131), a lower dielectric substrate (132), a lower metal backplane (133), and a lower metallized via hole (134); The lower radiation patch (131) is printed on the lower surface of the lower dielectric substrate (132) and is connected to the lower metallized via hole (134) passing through the lower dielectric substrate (132); the lower metal backplane (133) is printed on the upper surface of the lower dielectric substrate (132), and there is a circular pore with the same axis and a radius slightly larger than the metallized via hole at the lower metallized via hole (134); The circuit layer (121) includes an upper microstrip transmission line (1211), a lower microstrip transmission line (1212), a broadband unidirectional amplifier circuit (1213), an enable connection line (1214), a bias connection line (1215), and a metal coating (1216); The lower end of the upper microstrip transmission line (1211) is connected to the input end of the broadband unidirectional amplification circuit (1213), and the upper end is connected to the upper metallized via hole (114) and not connected to the upper metal backplane (113); the upper end of the lower microstrip transmission line (1212) is connected to the output end of the broadband unidirectional amplification circuit (1213), and the lower end is connected to the lower metallized via hole (134) and not connected to the lower metal backplane (133); one end of the enable connection line (1214) is connected to the enable end of the broadband unidirectional amplification circuit (1213), and the other end is connected to the enable control line (126) through a metallized via hole penetrating the first dielectric layer (123); one end of the bias connection line (1215) is connected to the bias end of the broadband unidirectional amplification circuit (1213), and the other end is connected to the bias control line (127) through a metallized via hole penetrating the second dielectric layer (125). The upper microstrip transmission line (1211), the lower microstrip transmission line (1212), the broadband unidirectional amplification circuit (1213), the enable connection line (1214) and the bias connection line (1215) are connected to form a combination; there is a gap between the metal cladding (1216) and the combination, and it is connected to the metal interlayer (124) through a metal grounding hole group (122) penetrating the first dielectric layer (123) near its edge to ensure the stable transmission of broadband signals. The upper and lower ends of the metal cladding (1216) are also fully connected to the upper metal backplane (113) and the lower metal backplane (133) respectively.

2. The broadband non-reciprocal wave-transmitting electromagnetic surface according to claim 1, wherein The metal interlayer (124) has circular pores with coincident centers and a radius slightly larger than the metallized via holes at the metallized via holes connecting the enable connection line (1214) and the bias connection line (1215) and at the metallized via holes connecting the enable control line (126) and the bias control line (127).

3. The broadband non-reciprocal transmission electromagnetic surface according to claim 1, wherein An enable voltage Ven is loaded between the enable control line (126) and the ground plane to control the switching state of the broadband unidirectional amplification circuit (1213).

4. The broadband non-reciprocal transmitting electromagnetic surface according to claim 1, characterized in that, An enable voltage Vdd is loaded between the bias control line (127) and the ground plane to control the non-reciprocal transmission characteristics of the broadband unidirectional amplification circuit (1213).

5. The broadband non-reciprocal wave-transmitting electromagnetic surface according to claim 1, characterized in that, The broadband non-reciprocal wave-transmitting unit (1) rotates the broadband unidirectional circuits (12) of adjacent units whose centers are on the same straight line around the centers of the upper metallized via hole (114) and the lower metallized via hole (134) so that they are placed parallel to this straight line, and then extends the first dielectric layer (123), the metal interlayer (124), the second dielectric layer (125), the enable control line (126) and the bias control line (127) to be connected to adjacent units, reducing the feeding difficulty.

6. The broadband non-reciprocal wave-transmitting electromagnetic surface according to claim 1, wherein The broadband unidirectional circuit (12) has a unidirectional amplification effect on the electromagnetic waves received by the upper broadband antenna unit (11), and has a reflection and absorption effect on the electromagnetic waves received by the lower broadband antenna unit (13).

7. The broadband non-reciprocal transmitting electromagnetic surface according to claim 1, wherein The broadband unidirectional circuit (12) is placed parallel to the polarization directions of the upper broadband antenna unit (11) and the lower broadband antenna unit (13).

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