Phase shifter and antenna

Abstract

The present invention discloses a phase shifter and an antenna, wherein the phase shifter includes at least one phase shift unit, the phase shift unit includes a grounded metal layer and a phase shifter wiring, at least one semiconductor structure is connected in series on the phase shifter wiring, and the semiconductor structure includes a semiconductor layer, a first metal layer, and a second metal layer; the first metal layer is located between the semiconductor layer and the grounded metal layer, and the first metal layer is insulated from the semiconductor layer, and along the thickness direction of the first substrate, there is an overlapping area between the semiconductor layer, the first metal layer, and the second metal layer, and the dielectric constant of the semiconductor layer changes according to the first voltage applied to the first metal layer. The phase shifter and antenna provided by the embodiment of the present invention do not need to use liquid crystal to adjust the phase, thereby improving the response speed, and do not need to be boxed, only a single substrate is needed, the overall thickness is low, the number of processes is small, the yield is high, and it can be prepared using a panel process, the process is mature, and it is easy to mass produce.

Description

Technical Field

[0001] The present invention relates to the field of communication technology, and in particular to a phase shifter and an antenna. Background Art

[0002] The phased array antenna is an important radio device for transmitting and receiving electromagnetic waves. The phased array antenna controls the feeding phase of the radiating unit in the array antenna through a phase shifter to change the antenna radiation direction to achieve the purpose of beam scanning.

[0003] The phase shifter of the existing phased array antenna uses a liquid crystal phase shifter to achieve the function of beam scanning. The liquid crystal phase shifter is based on the anisotropy of liquid crystal molecules. By changing the bias voltage applied to the liquid crystal, the liquid crystal deflection direction changes and the phase of the RF signal in each phase shifter unit is adjusted. However, the liquid crystal response time is in the millisecond level, which makes the liquid crystal response time in the liquid crystal phase shifter longer, resulting in a longer response time when adjusting the phase. At the same time, the liquid crystal phase shifter requires a double-layer substrate box to accommodate the liquid crystal material, which is thick, complex in process, and high in cost, which limits the application of the phase shifter to a certain extent. Summary of the invention

[0004] The present invention provides a phase shifter and an antenna to solve the problems of slow response speed, large thickness, complex process and high cost of the existing phase shifter.

[0005] According to one aspect of the present invention, there is provided a phase shifter, comprising:

[0006] a first substrate;

[0007] at least one phase shifting unit, wherein the phase shifting unit is disposed on the first substrate;

[0008] The phase shift unit comprises a grounded metal layer and a phase shifter wiring, and at least one semiconductor structure is connected in series on the phase shifter wiring;

[0009] The phase shifter trace and the semiconductor structure are located on the same side of the first substrate;

[0010] The grounding metal layer is located on one side of the first substrate;

[0011] The phase shifter wiring is insulated from the ground metal layer, and along the thickness direction of the first substrate, the phase shifter wiring at least partially overlaps with the ground metal layer;

[0012] The semiconductor structure includes a semiconductor layer, a first metal layer and a second metal layer;

[0013] The first metal layer is located between the semiconductor layer and the ground metal layer, and the first metal layer is insulated from the semiconductor layer;

[0014] At least a portion of the second metal layer is located on a side of the semiconductor layer away from the first metal layer, and the second metal layer is at least partially in contact with and connected to the semiconductor layer;

[0015] Along the thickness direction of the first substrate, the semiconductor layer, the first metal layer and the second metal layer have overlapping areas;

[0016] The dielectric constant of the semiconductor layer changes according to a first voltage applied to the first metal layer.

[0017] According to another aspect of the present invention, an antenna is provided, comprising the phase shifter described in the first aspect.

[0018] The phase shifter and antenna provided by the embodiment of the present invention are configured such that at least one semiconductor structure is connected in series on a phase shifter line, and the semiconductor structure includes a semiconductor layer, a first metal layer, and a second metal layer. Along the thickness direction of the first substrate, there is an overlapping area between the semiconductor layer, the first metal layer, and the second metal layer. The dielectric constant of the semiconductor layer changes according to a first voltage applied to the first metal layer, so that the dielectric constant of the semiconductor layer is changed by controlling the first voltage on the first metal layer. On the one hand, the dielectric constant of the semiconductor layer can be changed by controlling the first voltage on the first metal layer to control the on state or off state of the semiconductor structure, so that the length of the phase shifter line for transmitting the radio frequency signal can be changed, the phase of the radio frequency signal can be changed, and the phase shift function of the radio frequency signal can be realized. On the other hand, the radio frequency signal on the phase shifter line can be set to be transmitted through the second metal layer, and the dielectric constant of the semiconductor layer can be changed by controlling the first voltage on the first metal layer to cause the radio frequency signal transmitted on the second metal layer to shift its phase, thereby realizing the phase shift function of the radio frequency signal. The phase shifter does not need to use liquid crystal to adjust the phase, which greatly improves the response speed. In addition, it does not require liquid crystal and other in-box materials, so the cost is low. It does not need to be boxed, only a single substrate is needed, the overall thickness is low, the number of processes is small, and the yield is high. At the same time, it can be prepared using panel technology, which is mature and easy to mass produce.

[0019] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0021] Figure 1 A schematic diagram of the structure of a phase shifter provided by an embodiment of the present invention;

[0022] Figure 2 A schematic structural diagram of a phase shifting unit provided in an embodiment of the present invention;

[0023] Figure 3 for Figure 2 Schematic diagram of the cross-sectional structure along the A-A' direction;

[0024] Figure 4 A schematic diagram of a semiconductor structure provided by an embodiment of the present invention;

[0025] Figure 5 for Figure 2 Schematic diagram of the connection structure between the phase shifter wiring and the semiconductor structure;

[0026] Figure 6 A schematic diagram of a connection structure between a phase shifter wiring and a semiconductor structure provided by an embodiment of the present invention;

[0027] Figure 7 A schematic diagram of the structure of a phase shifter provided by an embodiment of the present invention;

[0028] Figure 8 A schematic structural diagram of another phase shifting unit provided in an embodiment of the present invention;

[0029] Fig. 9 for Figure 8 Schematic diagram of the connection structure between the phase shifter wiring and the semiconductor structure;

[0030] Fig.10 A schematic structural diagram of another semiconductor structure provided by an embodiment of the present invention;

[0031] Fig.11 A schematic structural diagram of another semiconductor structure provided by an embodiment of the present invention;

[0032] Fig.12 A schematic structural diagram of another semiconductor structure provided by an embodiment of the present invention;

[0033] Fig.13 A schematic structural diagram of another semiconductor structure provided by an embodiment of the present invention;

[0034] Fig.14 A schematic structural diagram of another phase shifting unit provided in an embodiment of the present invention;

[0035] Fig.15 for Fig.14 Schematic diagram of the connection structure between the phase shifter wiring and the semiconductor structure;

[0036] Fig.16A schematic structural diagram of another phase shifting unit provided in an embodiment of the present invention;

[0037] Fig.17 for Fig.16 Schematic diagram of the connection structure between the phase shifter wiring and the semiconductor structure;

[0038] Fig.18 A schematic structural diagram of another semiconductor structure provided by an embodiment of the present invention;

[0039] Fig.19 A schematic structural diagram of another phase shifting unit provided in an embodiment of the present invention;

[0040] Fig. 20 A schematic diagram of a partial cross-sectional structure of a phase shifter provided by an embodiment of the present invention;

[0041] Fig.21 A schematic diagram of a partial cross-sectional structure of another phase shifter provided by an embodiment of the present invention;

[0042] Fig. 22 A schematic structural diagram of another semiconductor structure provided by an embodiment of the present invention;

[0043] Fig.23 for Fig. 22 Schematic diagram of the cross-sectional structure along the B-B' direction;

[0044] Fig.24 A schematic structural diagram of another semiconductor structure provided by an embodiment of the present invention;

[0045] Fig.25 A schematic diagram of the structure of an antenna provided by an embodiment of the present invention;

[0046] Fig.26 for Fig.25 Schematic diagram of the cross-sectional structure along the C-C' direction;

[0047] Fig. 27 A schematic diagram of the structure of another antenna provided by an embodiment of the present invention;

[0048] Fig.28 for Fig. 27 Schematic diagram of the cross-sectional structure along the D-D' direction;

[0049] Fig.29 A schematic diagram of the structure of another antenna provided by an embodiment of the present invention;

[0050] Fig.30 for Fig.29 Schematic diagram of the cross-sectional structure along the E-E' direction;

[0051] Fig.31A schematic diagram of a partial cross-sectional structure of an antenna provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0052] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0053] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0054] Figure 1 A schematic diagram of the structure of a phase shifter provided in an embodiment of the present invention is shown in FIG. Figure 2 A schematic diagram of the structure of a phase shift unit provided in an embodiment of the present invention, Figure 3 for Figure 2 Schematic diagram of the cross-sectional structure along the A-A' direction, Figure 4 A schematic diagram of a semiconductor structure provided by an embodiment of the present invention is shown in FIG. Figure 1-Figure 4 As shown, the phase shifter provided by the embodiment of the present invention includes:

[0055] The first substrate 10 .

[0056] At least one phase shifting unit 11 is disposed on the first substrate 10 .

[0057] The phase shift unit 11 includes a grounding metal layer 12 and a phase shifter wiring 13 , and at least one semiconductor structure 14 is connected in series to the phase shifter wiring 13 .

[0058] The phase shifter traces 13 and the semiconductor structure 14 are located on the same side of the first substrate 10 .

[0059] The grounding metal layer 12 is located on one side of the first substrate 10 .

[0060] The phase shifter trace 13 is insulated from the ground metal layer 12 , and along the thickness direction of the first substrate 10 , the phase shifter trace 13 at least partially overlaps with the ground metal layer 12 .

[0061] The semiconductor structure 14 includes a semiconductor layer 15, a first metal layer 16 and a second metal layer 17. The first metal layer 16 is located between the semiconductor layer 15 and the grounding metal layer 12, and the first metal layer 16 and the semiconductor layer 15 are insulated; at least a portion of the second metal layer 17 is located on a side of the semiconductor layer 15 away from the first metal layer 16, and the second metal layer 17 is at least partially in contact with and connected to the semiconductor layer 15.

[0062] Along the thickness direction of the first substrate 10 , there is an overlapping region among the semiconductor layer 15 , the first metal layer 16 , and the second metal layer 17 , and the dielectric constant of the semiconductor layer 15 changes according to the first voltage applied to the first metal layer 16 .

[0063] Specifically, the first substrate 10 is used to support and protect the phase shifter to improve the robustness of the phase shifter. At the same time, when preparing the phase shifter, the first substrate 10 can be used as a carrier to prepare the grounding metal layer 12, the phase shifter wiring 13, and the semiconductor structure 14 and other devices on the first substrate 10, which helps to reduce the difficulty of preparing the phase shifter.

[0064] The first substrate 10 may be made of glass. As glass is light-transmissive, it is beneficial to align the film layers when preparing the phase shifter, thereby achieving higher preparation accuracy.

[0065] Continue to refer Figure 1-Figure 4 At least one phase shifting unit 11 is disposed on the first substrate 10, and the phase shifting unit 11 is used to realize the function of shifting the radio frequency signal.

[0066] Among them, one phase shift unit 11 may be disposed on the first substrate 10 , or a plurality of phase shift units 11 distributed in an array may be disposed on the first substrate 10 to perform phase shifting on the radio frequency signal. Figure 1 Taking the example that the phase shifter includes four phase shifting units 11, in other embodiments, those skilled in the art may set the number and layout of the phase shifting units 11 according to actual requirements, which is not limited in the embodiments of the present invention.

[0067] The phase shifter provided in the embodiment of the present invention can be used in a phased array antenna. In the phased array antenna, by controlling the phase change of the radio frequency signal on each phase shifter, the change of the electromagnetic wave radiation direction of the phased array antenna can be achieved.

[0068] Continue to refer Figure 1-Figure 4The phase shift unit 11 includes a ground metal layer 12 and a phase shifter trace 13 which are insulated from each other, and along the thickness direction of the first substrate 10, the phase shifter trace 13 at least partially overlaps with the ground metal layer 12, and the phase shifter trace 13 is used to transmit radio frequency signals, and the radio frequency signals are transmitted between the phase shifter trace 13 and the ground metal layer 12.

[0069] At least one semiconductor structure 14 is connected in series to the phase shifter wiring 13 to help achieve a phase shifting function of the radio frequency signal transmitted on the phase shifter wiring 13 .

[0070] Specifically, Figure 1-Figure 4 As shown, the semiconductor structure 14 includes a semiconductor layer 15 and a first metal layer 16, the first metal layer 16 is located between the semiconductor layer 15 and the grounding metal layer 12, and the first metal layer 16 is insulated from the semiconductor layer 15; along the thickness direction of the first substrate 10, there is an overlapping area between the semiconductor layer 15 and the first metal layer 16, and the dielectric constant of the semiconductor layer 15 will change according to the first voltage applied to the first metal layer 16. Therefore, the dielectric constant of the semiconductor layer 15 can be controlled by controlling the magnitude of the first voltage on the first metal layer 16.

[0071] Among them, Figure 3 As shown, a first insulating layer 20 may be disposed between the first metal layer 16 and the semiconductor layer 15 to achieve an insulating setting between the first metal layer 16 and the semiconductor layer 15 . The material of the first insulating layer 20 may be G—SiNx, but is not limited thereto.

[0072] Optionally, along the thickness direction of the first substrate 10, the first metal layer 16 may cover the semiconductor layer 15, so that the first voltage on the first metal layer 16 can control the dielectric constant of the entire semiconductor layer 15 to improve the uniformity of the dielectric constant of the semiconductor layer 15, which is beneficial to improving the phase modulation performance of the semiconductor structure 14.

[0073] Furthermore, the setting area of ​​the first metal layer 16 can be set to be larger than the setting area of ​​the semiconductor layer 15, so as to reduce the risk of deviation between the first metal layer 16 and the semiconductor layer 15 when preparing the first metal layer 16 and the semiconductor layer 15, and ensure the overlapping setting between the first metal layer 16 and the semiconductor layer 15.

[0074] It should be noted that the embodiment of the present invention does not limit the material of the semiconductor layer 15 , and those skilled in the art can make a selection according to actual conditions, as long as the dielectric constant of the semiconductor layer 15 can be changed by controlling the first voltage on the first metal layer 16 .

[0075] Exemplarily, the material of the semiconductor layer 15 may include low-temperature polysilicon or oxide semiconductor, etc., wherein the material of the semiconductor layer 15 may be the material of the active layer in the thin film transistor, so that the semiconductor structure 14 can be directly prepared by the panel process for preparing the thin film transistor, and the process is mature and convenient for mass production.

[0076] Furthermore, the semiconductor structure 14 also includes a second metal layer 17, at least a portion of the second metal layer 17 is located on a side of the semiconductor layer 15 away from the first metal layer 16, and along the thickness direction of the first substrate 10, there is an overlapping area between the semiconductor layer 15, the first metal layer 16 and the second metal layer 17, and the second metal layer 17 is at least partially in contact with the semiconductor layer 15. With the above structure, the change in the dielectric constant of the semiconductor layer 15 can change the impedance of the second metal layer 17, and then by changing the impedance of different parts of the second metal layer 17, it can be controlled whether the impedances of different parts of the second metal layer 17 are matched, thereby controlling the on and off of the transmission of the radio frequency signal on the second metal layer 17, and then controlling the on and off of the semiconductor structure 14.

[0077] In one embodiment, the semiconductor structure 14 is connected in series to the phase shifter wiring 13. As described above, the dielectric constant of the semiconductor layer 15 can be changed by controlling the first voltage on the first metal layer 16, and the on and off of the semiconductor structure 14 can be controlled, thereby changing the length of the phase shifter wiring 13 that transmits the RF signal. The length of the phase shifter wiring 13 through which the RF signal passes is different, and the phase change of the RF signal will also be different. Therefore, by controlling the first voltage on the first metal layer 16 to change the dielectric constant of the semiconductor layer 15, the phase of the RF signal transmitted on the phase shifter wiring 13 can be made different, thereby realizing the phase shifting function of the RF signal.

[0078] In another embodiment, the semiconductor structure 14 is connected in series to the phase shifter wiring 13, and the RF signal on the phase shifter wiring 13 can be set to be transmitted through the second metal layer 17. When the second metal layer 17 transmits the RF signal, the change in the dielectric constant of the semiconductor layer 15 can also cause the RF signal transmitted on the second metal layer 17 to shift the phase, so that the dielectric constant of the semiconductor layer 15 can be changed by controlling the first voltage on the first metal layer 16 to change the phase of the RF signal on the second metal layer 17, thereby realizing the phase shifting function of the RF signal.

[0079] The response time of the semiconductor structure 14 to the first voltage on the first metal layer 16 is extremely short and can be ignored. Therefore, compared with the liquid crystal phase shifter, the response speed of the phase shifter when adjusting the phase can be greatly improved.

[0080] At the same time, the phase shifter provided by the embodiment of the present invention does not require liquid crystal and other in-box materials, and has low cost; and does not require box formation, only a single substrate is required, and the overall thickness is low, the number of processes is small, and the yield is high.

[0081] It should be noted that the materials of the phase shifter wiring 13 , the first metal layer 16 and the second metal layer 17 may include copper (Cu), aluminum (Al), titanium (Ti) or molybdenum (Mo), but are not limited thereto.

[0082] For example, the phase shifter trace 13, the first metal layer 16 or the second metal layer 17 can be made of copper. Copper is the most commonly used metal material in the antenna field, has excellent conductivity and low cost. The use of copper can effectively reduce the energy loss caused by excessive resistance, thereby improving the performance of the phase shifter, but is not limited to this.

[0083] Among them, the materials of the phase detector wiring 13, the first metal layer 16 and the second metal layer 17 can be the same or different. For example, the material of the first metal layer 16 can be different from the material of the phase detector wiring 13 and the second metal layer 17. Those skilled in the art can set it according to actual needs, and the embodiment of the present invention does not make specific limitations on this.

[0084] The phase shifter provided by the embodiment of the present invention is configured by connecting at least one semiconductor structure in series on a phase shifter line, and the semiconductor structure includes a semiconductor layer, a first metal layer, and a second metal layer. Along the thickness direction of the first substrate, there is an overlapping area between the semiconductor layer, the first metal layer, and the second metal layer. The dielectric constant of the semiconductor layer changes according to a first voltage applied to the first metal layer, so that the dielectric constant of the semiconductor layer is changed by controlling the first voltage on the first metal layer. On the one hand, the dielectric constant of the semiconductor layer can be changed by controlling the first voltage on the first metal layer to control the on state or off state of the semiconductor structure, so that the length of the phase shifter line for transmitting the radio frequency signal can be changed, the phase of the radio frequency signal can be changed, and the phase shift function of the radio frequency signal can be realized; on the other hand, the radio frequency signal on the phase shifter line can be set to be transmitted through the second metal layer, and the dielectric constant of the semiconductor layer can be changed by controlling the first voltage on the first metal layer to cause the radio frequency signal transmitted on the second metal layer to shift its phase, thereby realizing the phase shift function of the radio frequency signal. The phase shifter does not need to use liquid crystal to adjust the phase, which greatly improves the response speed. In addition, it does not require liquid crystal and other in-box materials, so the cost is low. It does not need to be boxed, only a single substrate is needed, the overall thickness is low, the number of processes is small, and the yield is high. At the same time, it can be prepared using panel technology, which is mature and easy to mass produce.

[0085] Figure 5 for Figure 2 Schematic diagram of the connection structure between the phase shifter wiring and the semiconductor structure, such as Figure 1-Figure 5As shown, optionally, the phase shifter trace 13 includes a first end 18 and a second end 19, the first end 18 is used to feed in the RF signal, the second end 19 is used to feed out the RF signal, at least two trace branches are included between the first end 18 and the second end 19, and the lengths of the at least two trace branches are different, and at least one semiconductor structure 14 is connected in series on each trace branch. The semiconductor structure 14 includes an on state and an off state, and the semiconductor structure 14 switches the on state or the off state according to the first voltage applied to the first metal layer 16 to control the on and off of different trace branches.

[0086] Specifically, the phase shifter provided in the embodiment of the present invention can be applied to a transmission antenna, such as Figure 1-Figure 5 As shown, the first end 18 and the second end 19 are at different positions. The first end 18 is used to feed in a radio frequency signal, and the second end 19 is used to feed out a radio frequency signal.

[0087] The RF signal fed from the first end 18 is transmitted to the second end 19 via the phase shifter routing 13, wherein at least two routing branches are included between the first end 18 and the second end 19, thereby forming at least two RF signal paths, and the lengths of at least two routing branches are different, so that the lengths of at least two RF signal paths are different, and at least one semiconductor structure 14 is connected in series on each routing branch.

[0088] The dielectric constant of the semiconductor layer 15 can be changed by controlling the first voltage on the first metal layer 16, and the semiconductor structure 14 can be controlled to be in an on state or an off state. When the semiconductor structure 14 is in an on state, the radio frequency signal can be transmitted through the semiconductor structure 14; when the semiconductor structure 14 is in an off state, the radio frequency signal cannot be transmitted through the semiconductor structure 14.

[0089] Therefore, by controlling the first voltage on the first metal layer 16 of the semiconductor structure 14 connected in series on each routing branch, the semiconductor structure 14 connected in series on each routing branch can be controlled to switch between an on state or an off state. When the semiconductor structure 14 connected in series on a certain routing branch is in an on state, the routing branch can form a radio frequency signal path, that is, the radio frequency signal can be transmitted on the routing branch; when the semiconductor structure 14 connected in series on a certain routing branch is in an off state, the routing branch will not form a radio frequency signal path, that is, the radio frequency signal cannot be transmitted on the routing branch.

[0090] In this embodiment, the semiconductor structure 14 connected in series on each routing branch can be independently controlled by the first voltage on its first metal layer 16. By controlling the semiconductor structure 14 connected in series on each routing branch to switch between an on state or an off state, the on and off of different routing branches can be controlled. Since the lengths of different routing branches can be different, the length of the phase shifter routing 13 through which the RF signal is transmitted from the first end 18 to the second end 19 can be changed by controlling the on and off of different routing branches, thereby adjusting the phase change of the RF signal and realizing the phase shifting function of the RF signal.

[0091] The number and position of the semiconductor structures 14, as well as the number of routing branches of the phase shifter routing 13 and the length of each routing branch can be designed according to the accuracy of phase adjustment. Figure 1-Figure 5 As shown, the phase shifter routing 13 can be set to a spiral structure, and an additional routing branch is set between adjacent turns of the phase shifter routing 13 in the spiral structure. The routing branch is turned on to shorten the transmission distance of the RF signal, thereby adjusting the phase change of the RF signal and realizing the phase shifting function of the RF signal.

[0092] Among them, the first end 18 is arranged at the edge area of ​​the spiral structure, and the second end 19 is arranged at the central area of ​​the spiral structure, so that the position where the RF signal radiates outward is located in the central area of ​​the spiral structure, which is beneficial to reducing the gap between adjacent phase shifting units 11 and making the structure more compact, thereby reducing the size of the phase shifter and realizing a miniaturized design, but is not limited to this.

[0093] Figure 6 A schematic diagram of a connection structure of a phase shifter wiring and a semiconductor structure provided by an embodiment of the present invention, such as Figure 6 As shown, exemplarily, the phase shifter routing 13 can be set to a serpentine structure, and additional routing branches are arranged between adjacent columns of the phase shifter routing 13 in the serpentine structure. The conduction of the routing branches can shorten the transmission distance of the RF signal, thereby adjusting the phase change of the RF signal and realizing the phase shifting function of the RF signal.

[0094] Among them, by setting the phase shifter routing 13 to a spiral structure or a serpentine structure, the structure can be made more compact, and the area occupied by the phase shifter routing 13 can be reduced, thereby reducing the size of the phase shifter and realizing a miniaturized design. However, it is not limited to this. Those skilled in the art can make settings according to actual needs. As long as the transmission path of the RF signal can be changed by controlling the on and off of the semiconductor structure 14 on each routing branch, and then the transmission distance of the RF signal can be changed, the phase modulation function can be realized.

[0095] Figure 7 A schematic diagram of the structure of a phase shifter provided in an embodiment of the present invention is shown in FIG. Figure 8A schematic diagram of the structure of another phase shifting unit provided in an embodiment of the present invention, Fig. 9 for Figure 8 Schematic diagram of the connection structure between the phase shifter wiring and the semiconductor structure, such as Figure 7-Figure 9 As shown, optionally, the phase shifter trace 13 includes a first end 18 and a second end 19, the first end 18 is used to feed in the RF signal, and the second end 19 is used to feed out the RF signal, the first end 18 and the second end 19 are the same end of the phase shifter trace 13, and the semiconductor structure 14 includes an on state and an off state, and the semiconductor structure 14 switches the on state or the off state according to the first voltage applied to the first metal layer 16.

[0096] Specifically, the phase shifter provided in the embodiment of the present invention can be applied to a reflective antenna, such as Figure 7-Figure 9 As shown, the feed source (not shown in the figure) transmits the RF signal to the phase shifter in the form of electromagnetic waves, and the first end 18 and the second end 19 of the phase shifter trace 13 in the phase shifter are at the same position, so that the RF signal is fed in and out at the same position.

[0097] At least one semiconductor structure 14 is connected in series to the phase shifter trace 13. The dielectric constant of the semiconductor layer 15 can be changed by controlling the first voltage on the first metal layer 16 in the semiconductor structure 14, thereby controlling the semiconductor structure 14 to be in an on state or an off state. When the semiconductor structure 14 is in an on state, the radio frequency signal can be transmitted through the semiconductor structure 14; when the semiconductor structure 14 is in an off state, the radio frequency signal cannot be transmitted through the semiconductor structure 14.

[0098] Therefore, by controlling the first voltage on the first metal layer 16 of each semiconductor structure 14, each semiconductor structure 14 can be controlled to switch between an on state or an off state, so that the length of the phase shifter trace 13 forming a radio frequency signal path between the first end 18 and the second end 19 can be dynamically adjusted, and the phase of the radio frequency signal on the phase shifter trace 13 will change accordingly, thereby realizing the phase shifting function of the radio frequency signal.

[0099] Compared with the above-mentioned phase shifter applied to the transmissive antenna, the number of semiconductor structures 14 in the phase shifter provided by the embodiment of the present invention can be reduced by half, thereby helping to reduce the cost of the phase shifter.

[0100] It should be noted that the number and position of the semiconductor structures 14, as well as the number of routing branches of the phase shifter routing 13 and the length of each routing branch can be designed according to the accuracy of phase adjustment. Figure 7-Figure 9 As shown, the phase shifter wiring 13 may be configured as a spiral structure to reduce the occupied area of ​​the phase shifter wiring 13, thereby reducing the size of the phase shifter, but is not limited thereto.

[0101] Furthermore, if Figure 7-Figure 9 As shown, the first end 18 and the second end 19 are arranged in the central area of ​​the spiral structure, so that the position where the RF signal radiates outward is located in the central area of ​​the spiral structure, which is beneficial to reducing the gap between adjacent phase shifting units 11, thereby reducing the size of the phase shifter and realizing a miniaturized design, but is not limited to this.

[0102] Continue to refer Figure 1-Figure 9 Optionally, the second metal layer 17 includes a first subsection 171 and a second subsection 172 which are insulated from each other, and the first subsection 171 and the second subsection 172 are respectively connected to the phase shifter trace 13. Along the thickness direction of the first substrate 10, there is an overlapping area between the semiconductor layer 15, the first metal layer 16 and the second subsection 172, and the first subsection 171 is located in a different area from the semiconductor layer 15 and the first metal layer 16. The impedance of the second subsection 172 changes according to the first voltage applied to the first metal layer 16. When the semiconductor structure is in the on state, the impedance of the second subsection 172 is the same as the impedance of the first subsection 171; when the semiconductor structure is in the off state, the impedance of the second subsection 172 is different from the impedance of the first subsection 171.

[0103] Specifically, Figure 1-Figure 9 As shown, the second metal layer 17 includes a first section 171 and a second section 172 which are insulated from each other. A break is provided on the phase shifter trace 13. The first section 171 is connected to the phase shifter trace 13 at one end of the break, and the second section 172 is connected to the phase shifter trace 13 at the other end of the break.

[0104] Along the thickness direction of the first substrate 10, there is an overlapping area between the semiconductor layer 15, the first metal layer 16 and the second division 172. The second division 172 is at least partially in contact with the semiconductor layer 15. The dielectric constant of the semiconductor layer 15 can be changed by controlling the first voltage on the first metal layer 16. The change in the dielectric constant of the semiconductor layer 15 can change the impedance of the second division 172. Therefore, the impedance of the second division 172 can be changed according to the first voltage applied to the first metal layer 16.

[0105] The first division 171 is located in different areas with the semiconductor layer 15 and the first metal layer 16, that is, along the thickness direction of the first substrate 10, there is no overlapping area between the first division 171 and the semiconductor layer 15, and between the first division 171 and the first metal layer 16, so that the impedance of the first division 171 will not change with the change of the first voltage on the first metal layer 16.

[0106] As described above, the impedance of the second subsection 172 changes according to the first voltage applied to the first metal layer 16. The impedance of the second subsection 172 can be controlled by controlling the first voltage on the first metal layer 16. When the impedance of the second subsection 172 is controlled to be the same as the impedance of the first subsection 171, the semiconductor structure 14 is in a conducting state. At this time, the impedance of the second subsection 172 is matched with that of the first subsection 171, and the RF signal can be coupled from the first subsection 171 to the second subsection 172, or the RF signal can be coupled from the second subsection 172 to the first subsection 171. Part 171, so that the radio frequency signal can be transmitted through the semiconductor structure 14; when the impedance of the second division 172 is controlled to be different from the impedance of the first division 171, the semiconductor structure 14 is in the off state. At this time, the impedance of the second division 172 does not match the impedance of the first division 171, and the radio frequency signal cannot be transmitted between the first division 171 and the second division 172, so that the radio frequency signal cannot be transmitted through the semiconductor structure 14, thereby controlling the first voltage on the first metal layer 16 to realize that the semiconductor structure 14 is in the on state or the off state.

[0107] Wherein, when the semiconductor structure 14 is in the on state or the off state, the voltage value of the first voltage on the first metal layer 16 can be set according to actual conditions, and the embodiment of the present invention does not limit this.

[0108] It should be noted that when no voltage is applied to the first metal layer 16, the impedances of the first subdivision 171 and the second subdivision 172 may be the same or different, and the embodiment of the present invention does not limit this. Among them, when no voltage is applied to the first metal layer 16, if the impedances of the first subdivision 171 and the second subdivision 172 are the same, then the semiconductor structure 14 is in the on state, and the semiconductor structure 14 can be switched to the off state by applying a first voltage to the first metal layer 16; when no voltage is applied to the first metal layer 16, if the impedances of the first subdivision 171 and the second subdivision 172 are different, then the semiconductor structure 14 is in the off state, and the semiconductor structure 14 can be switched to the on state by applying a first voltage to the first metal layer 16, but it is not limited thereto.

[0109] The impedance values ​​of the first sub-portion 171 and the second sub-portion 172 may be set according to actual needs, and the embodiment of the present invention does not limit this.

[0110] For example, when no voltage is applied to the first metal layer 16 , if it is necessary to set the impedance of the first section 171 and the second section 172 to be different, the impedance can be achieved by setting at least one of the material, line width and thickness of the first section 171 and the second section 172 to be different.

[0111] For example, Fig.10 A schematic diagram of another semiconductor structure provided by an embodiment of the present invention is shown in FIG. Fig.10 As shown, the impedance of the first sub-portion 171 and the second sub-portion 172 can be different by setting the line width of the first sub-portion 171 and the second sub-portion 172 to be different, but it is not limited thereto.

[0112] It should be noted that the semiconductor structure 14 provided in the embodiment of the present invention is used to realize the switching function. While ensuring the switching function, its size can be set at the micron level. The size of the existing switching devices used in the phase shifter is relatively large. For example, the PIN diode as a switching device that can be used in the phase shifter has a size of the mm level. Therefore, the size of the semiconductor structure 14 provided in the embodiment of the present invention is much smaller than the size of the existing switching devices used in the phase shifter, which is conducive to large-scale integration and has cost advantages.

[0113] Optional, such as Figure 1-Figure 9 As shown, along the thickness direction of the first substrate 10 , the semiconductor layer 15 can cover the second section 172 , so that the dielectric constant of the semiconductor layer 15 can affect the impedance of the entire second section 172 , thereby improving the impedance uniformity of the second section 172 , which is beneficial to improving the phase modulation performance of the semiconductor structure 14 .

[0114] Furthermore, the setting area of ​​the semiconductor layer 15 can be set to be larger than the setting area of ​​the second division 172, so as to reduce the risk of deviation between the semiconductor layer 15 and the second division 172 when preparing the semiconductor layer 15 and the second division 172, and ensure the overlapping setting between the semiconductor layer 15 and the second division 172.

[0115] Continue to refer Figure 4 and Fig.10 Optionally, the impedance of the first section 171 is the same as that of the phase shifter trace 13 .

[0116] By setting the impedance of the first sub-portion 171 and the phase shifter wiring 13 to be the same, the transmission loss of the RF signal between the first sub-portion 171 and the phase shifter wiring 13 can be reduced, thereby helping to improve the radiation performance of the phase shifter.

[0117] At the same time, the impedance of the first section 171 and the phase shifter trace 13 is the same, and the first section 171 and the phase shifter trace 13 can be set to use the same material, thickness and line width, so that the first section 171 and the phase shifter trace 13 can be prepared in the same process, thereby shortening the process time.

[0118] Continue to refer Figure 4 and Fig.10Optionally, along the thickness direction of the first substrate 10, the projection of the first section 171 on the first substrate 10 is a first projection pattern, and the projection of the second section 172 on the first substrate 10 is a second projection pattern; along the first direction X, the overlapping length of the first projection pattern and the second projection pattern is greater than the width of the phase shifter trace 13, wherein the first direction X is perpendicular to the thickness direction of the first substrate 10.

[0119] For example, Figure 4 and Fig.10 As shown, by setting the overlapping length of the vertical projection of the first section 171 on the first substrate 10 and the vertical projection of the second section 172 on the first substrate 10 along the first direction X to be greater than the width of the phase shifter trace 13, the transmission loss of the RF signal between the first section 171 and the second section 172 can be reduced, thereby helping to improve the radiation performance of the phase shifter.

[0120] Optional, such as Figure 4 and Fig.10 As shown, the first direction X may be parallel to the extending direction of the phase shifter trace 13 .

[0121] In other embodiments, Fig.11 A schematic diagram of a semiconductor structure according to another embodiment of the present invention is provided. Fig.12 A schematic diagram of a semiconductor structure according to another embodiment of the present invention is provided. Fig.13 A schematic diagram of another semiconductor structure provided by an embodiment of the present invention is shown in FIG. Figure 11-13 As shown, the first direction X may also be perpendicular to the extension direction of the phase shifter wiring 13, which is not limited in the embodiment of the present invention.

[0122] In addition, the shape and length of the first section 171 and the second section 172 can also be set according to actual needs. For example, the first section 171 can adopt any shape such as a straight line, an arc or a U shape. Similarly, the second section 172 can also adopt any shape such as a straight line, an arc or a U shape, but is not limited to this.

[0123] It should be noted that the connection relationship between the first sub-portion 171 and the second sub-portion 172 and the phase shifter wiring 13 can be set according to actual needs.

[0124] For example, continue to refer to Figure 5 The phase shifter trace 13 is disconnected at the semiconductor structure 14 to form a break, and the phase shifter traces 13 on both sides of the break are connected through the semiconductor structure 14, so that the semiconductor structure 14 is connected in series in the phase shifter trace 13. Specifically, along the transmission direction of the RF signal, the first sub-portion 171 can be connected to the phase shifter trace 13 on the side of the break close to the first end 18, and the second sub-portion 172 is connected to the phase shifter trace 13 close to the second end 19.

[0125] In other embodiments, Fig.14 A schematic diagram of the structure of another phase shifting unit provided in an embodiment of the present invention, Fig.15 for Fig.14 Schematic diagram of the connection structure between the phase shifter wiring and the semiconductor structure, such as Figure 6 , Fig. 9 , Fig.14 and Fig.15 As shown, illustratively, the phase shifter trace 13 is disconnected at the semiconductor structure 14 to form a break, and the phase shifter traces 13 on both sides of the break are connected through the semiconductor structure 14, so that the semiconductor structure 14 is connected in series in the phase shifter trace 13. In the transmission direction of the RF signal, the first sub-portion 171 can also be connected to the phase shifter trace 13 on the side of the break close to the second end 19, and the second sub-portion 172 is connected to the phase shifter trace 13 close to the first end 18, but it is not limited thereto.

[0126] Fig.16 A schematic diagram of the structure of another phase shifting unit provided in an embodiment of the present invention, Fig.17 for Fig.16 Schematic diagram of the connection structure between the phase shifter wiring and the semiconductor structure. Fig.18 A schematic diagram of another semiconductor structure provided by an embodiment of the present invention is shown in FIG. Figure 16-18 As shown, optionally, the second metal layer 17 is connected in series between the phase shifter traces 13 , and the impedance of the second metal layer 17 is the same as the impedance of the phase shifter traces 13 .

[0127] Specifically, Figure 16-18 As shown, taking the phase shifter used in the reflective antenna as an example, the first end 18 and the second end 19 of the phase shifter trace 13 in the phase shifter are at the same position. At least one semiconductor structure 14 is connected in series on the phase shifter trace 13, wherein the second metal layer 17 of the semiconductor structure 14 is connected in series between the phase shifter traces 13, and the radio frequency signal transmitted on the phase shifter trace 13 is transmitted through the second metal layer 17. By setting the impedance of the second metal layer 17 to be the same as the impedance of the phase shifter trace 13, the transmission loss of the radio frequency signal between the second metal layer 17 and the phase shifter trace 13 is reduced, thereby helping to improve the radiation performance of the phase shifter.

[0128] At the same time, the impedance of the second metal layer 17 and the phase shifter wiring 13 are the same. The second metal layer 17 and the phase shifter wiring 13 can be set to use the same material, thickness and line width, so that the second metal layer 17 and the phase shifter wiring 13 can be prepared in the same process, thereby shortening the process time.

[0129] Furthermore, the dielectric constant of the semiconductor layer 15 can be changed by controlling the first voltage on the first metal layer 16 in the semiconductor structure 14. The RF signal on the phase shifter trace 13 is transmitted through the second metal layer 17. The change in the dielectric constant of the semiconductor layer 15 can enable the phase of the RF signal transmitted on the second metal layer 17 to change continuously within a certain range. Therefore, the dielectric constant of the semiconductor layer 15 can be changed by controlling the first voltage on the first metal layer 16 to change the phase of the RF signal on the second metal layer 17, thereby realizing the phase shifting function of the RF signal.

[0130] The phase shifter provided in the embodiment of the present invention can realize the phase shifting function of the radio frequency signal without setting a long phase shifter wiring 13, thereby reducing the size of the phase shifter and realizing a miniaturized design.

[0131] It should be noted that the phase shifter provided in the embodiment of the present invention can also be applied to a transmissive antenna. For example, Fig.19 A structural diagram of another phase shifting unit provided in an embodiment of the present invention is shown in FIG. Fig.19 As shown, when the phase shifter is applied to a transmissive antenna, the positions of the first end 18 and the second end 19 are different, wherein the first end 18 may be located at one end of the phase shifter trace 13 and the second end 19 is located at the other end of the phase shifter trace 13, but it is not limited thereto.

[0132] Continue to refer Figure 3 Optionally, the phase shifter trace 13 and the ground metal layer 12 are located on different sides of the first substrate 10 .

[0133] Specifically, Figure 3 As shown, the grounding metal layer 12 is located on one side of the first substrate 10 , and the phase shifter trace 13 and the semiconductor structure 14 are located on a side of the first substrate 10 away from the grounding metal layer 12 .

[0134] Continue to refer Figure 3 When preparing the phase shifter, a panel process can be used for preparation, wherein a first metal layer 16, a first insulating layer 20, a semiconductor layer 15, a phase shifter wiring 13 and a second metal layer 17 can be prepared in sequence on one side of the first substrate 10, and a grounding metal layer 12 can be prepared on a side of the first substrate 10 away from the first metal layer 16. The process is mature and convenient for mass production.

[0135] The phase shifter provided in the embodiment of the present invention can make the first substrate 10 play an insulating role between the phase shifter wiring 13 and the grounding metal layer 12 by arranging the phase shifter wiring 13 and the grounding metal layer 12 on different sides, so that there is no need to arrange an additional insulating layer between the phase shifter wiring 13 and the grounding metal layer 12, which helps to reduce the thickness of the phase shifter and realize a miniaturized design.

[0136] Fig. 20 A partial cross-sectional structural diagram of a phase shifter provided in an embodiment of the present invention is shown in FIG. Fig. 20 As shown, optionally, the phase shifter trace 13 and the ground metal layer 12 are located on the same side of the first substrate 10 .

[0137] For example, Fig. 20 As shown, the phase shifter trace 13, the grounding metal layer 12 and the semiconductor structure 14 are all located on the same side of the first substrate 10. In this way, the semiconductor structure 14, the phase shifter trace 13 and the grounding metal layer 12 can be prepared on the same side of the first substrate 10, and there is no need to perform a double-sided etching process on the first substrate 10 to form the semiconductor structure 14, the phase shifter trace 13 and the grounding metal layer 12, thereby reducing the difficulty of manufacturing the phase shifter and helping to reduce the cost of the phase shifter.

[0138] Continue to refer Fig. 20 Optionally, an inorganic insulating layer 21 is provided between the phase shifter wiring 13 and the ground metal layer 12 .

[0139] Specifically, Fig. 20 As shown, an inorganic insulating layer 21 is provided between the phase shifter wiring 13 and the ground metal layer 12 to achieve an insulating setting between the phase shifter wiring 13 and the ground metal layer 12 .

[0140] Among them, the use of the inorganic insulating layer 21 can reduce the transmission loss of the radio frequency signal, thereby helping to improve the radiation performance of the phase shifter.

[0141] It should be noted that a plurality of inorganic insulating layers 21 may be arranged between the phase shifter trace 13 and the ground metal layer 12 so that the overall thickness of the inorganic insulating layer 21 is greater than the thickness of the semiconductor structure 14, thereby playing a planarizing role and making the ground metal layer 12 smoother, which helps to improve the product yield, but is not limited to this.

[0142] Continue to refer Fig. 20 Optionally, an organic insulating layer 22 is provided between the phase shifter wiring 13 and the ground metal layer 12 .

[0143] Specifically, Fig. 20 As shown, an organic insulating layer 22 is provided between the phase shifter wiring 13 and the ground metal layer 12 to achieve an insulating setting between the phase shifter wiring 13 and the ground metal layer 12 .

[0144] Among them, a single layer of organic insulating layer 22 can achieve a relatively large thickness, so that fewer process steps can be used to achieve a thickness of the organic insulating layer 22 greater than that of the semiconductor structure 14, which plays a planarizing role, making the grounding metal layer 12 flatter and improving product yield.

[0145] It should be noted that the organic insulating layer 22 may be made of an organic material such as an over coat (OC) or polyimide (PI), but is not limited thereto.

[0146] Fig.21 A partial cross-sectional structural diagram of another phase shifter provided in an embodiment of the present invention is shown in FIG. Fig. 20 and Fig.21 As shown, optionally, the grounding metal layer 12 is located on a side of the phase shifter trace 13 away from the first substrate 10 , or the phase shifter trace 13 is located on a side of the grounding metal layer 12 away from the first substrate 10 .

[0147] For example, Fig. 20 As shown, the grounding metal layer 12 is located on the side of the phase shifter wiring 13 away from the first substrate 10. When preparing the phase shifter, the phase shifter wiring 13 and the second metal layer 17, the semiconductor layer 15, the first insulating layer 20, the first metal layer 16, the inorganic insulating layer 21 / organic insulating layer 22, and the grounding metal layer 12 can be prepared in sequence on one side of the first substrate 10 by using a panel process. The process is mature and convenient for mass production.

[0148] In other embodiments, Fig.21 As shown, the phase shifter wiring 13 can also be arranged on the side of the grounding metal layer 12 away from the first substrate 10. When preparing the phase shifter, the grounding metal layer 12, the inorganic insulating layer 21 / the organic insulating layer 22, the first metal layer 16, the first insulating layer 20, the semiconductor layer 15, the phase shifter wiring 13 and the second metal layer 17 can be prepared in sequence on one side of the first substrate 10 by using a panel process. This process is mature and convenient for mass production.

[0149] At the same time, by setting the phase shifter wiring 13 to be located on the side of the grounding metal layer 12 away from the first substrate 10, the thickness of the inorganic insulating layer 21 / organic insulating layer 22 is greater than the thickness of the grounding metal layer 12, which can play a flattening role. At this time, the inorganic insulating layer 21 / organic insulating layer 22 does not need to have a larger thickness to meet the flattening requirements, thereby helping to reduce the thickness of the phase shifter and achieve a miniaturized design.

[0150] Fig. 22 A schematic diagram of a semiconductor structure according to another embodiment of the present invention is provided. Fig.23 for Fig. 22 The schematic diagram of the cross-sectional structure along the B-B' direction is as follows: Fig. 22 and Fig.23 As shown, optionally, the first metal layer 16 includes a first hollow portion 161 , and the first hollow portion 161 at least partially overlaps with the second metal layer 17 .

[0151] Specifically, Fig. 22 and Fig.23As shown, the first metal layer 16 is located between the second metal layer 17 and the ground metal layer 12, and a first hollow portion 161 that at least partially overlaps with the second metal layer 17 is provided on the first metal layer 16 to reduce the influence of the first metal layer 16 on the radio frequency signal transmission between the second metal layer 17 and the ground metal layer 12.

[0152] It should be noted that, in any embodiment of the present invention, for example Figure 3 , Fig. 20 and Fig.21 As shown, a first hollow portion 161 can be set on the first metal layer 16, and the first hollow portion 161 at least partially overlaps with the second metal layer 17 to avoid affecting the transmission of the RF signal between the second metal layer 17 and the ground metal layer 12, which will not be repeated here.

[0153] Optional, such as Fig. 22 and Fig.23 As shown, part of the first metal layer 16 is located between the phase shifter trace 13 and the ground metal layer 12, and a first hollow portion 161 at least partially overlapping the phase shifter trace 13 is provided on the first metal layer 16 to reduce the influence of the first metal layer 16 on the RF signal transmission between the phase shifter trace 13 and the ground metal layer 12.

[0154] It should be noted that the number and shape of the first hollow portions 161 can be set according to actual needs, for example, according to the shape of the overlapping area of ​​the first metal layer 16 and the second metal layer 17. Fig.24 A schematic diagram of another semiconductor structure provided by an embodiment of the present invention is shown in FIG. Fig.24 As shown, when the second section 172 of the second metal layer 17 is widened, the size of the first hollow portion 161 overlapping therewith can also be adaptively increased, but it is not limited thereto, and those skilled in the art can make settings according to actual needs.

[0155] Based on the same inventive concept, an embodiment of the present invention further provides an antenna, which includes the phase shifter described in any embodiment of the present invention. Therefore, the antenna provided by the embodiment of the present invention has the technical effect of the technical solution in any of the above embodiments, and the structures that are the same or corresponding to the above embodiments and the explanation of terms are no longer repeated here.

[0156] Fig.25 A schematic diagram of the structure of an antenna provided by an embodiment of the present invention, Fig.26 for Fig.25 Schematic diagram of the cross-sectional structure along the C-C' direction, as shown in Fig.25 and Fig.26As shown, optionally, the antenna provided in the embodiment of the present invention further includes a radiation electrode 23 , and a vertical projection of the ground metal layer 12 on the first substrate 10 at least partially overlaps with a vertical projection of the radiation electrode 23 on the first substrate 10 .

[0157] Among them, Fig.25 and Fig.26 As shown, along the thickness direction of the first substrate 10 , the radiation electrode 23 at least partially overlaps with the ground metal layer 12 , and the RF signal transmitted on the phase shifter trace 13 is phase-shifted and then radiated outward through the radiation electrode 23 .

[0158] Fig. 27 A schematic diagram of the structure of another antenna provided by an embodiment of the present invention, Fig.28 for Fig. 27 The schematic diagram of the cross-sectional structure along the D-D' direction is as follows: Fig. 27 and Fig.28 As shown, optionally, the radiation electrode 23 and the phase shifter wiring 13 are arranged in the same layer, and the radiation electrode 23 is connected to the phase shifter wiring 13 .

[0159] For example, Fig. 27 and Fig.28 As shown, by setting the radiation electrode 23 to be connected to the phase shifter wiring 13, the radio frequency signal transmitted on the phase shifter wiring 13 can be directly transmitted to the radiation electrode 23 after phase shifting, so as to realize outward radiation of the signal.

[0160] Furthermore, by arranging the radiation electrode 23 and the phase shifter wiring 13 in the same layer, the connection between the radiation electrode 23 and the phase shifter wiring 13 is facilitated, and at the same time, the arrangement of one metal layer can be reduced, thereby reducing the thickness of the antenna and realizing a miniaturized design.

[0161] Continue to refer Fig.25 and Fig.26 Optionally, the radiation electrode 23 is located on a side of the ground metal layer 12 away from the phase shifter trace 13, the radiation electrode 23 and the ground metal layer 12 are insulated, and the ground metal layer 12 includes a second hollow portion 121. Along the thickness direction of the first substrate 10, the radiation electrode 23 covers the second hollow portion 121.

[0162] For example, Figure 1 , Figure 2 , Figure 7 , Figure 8 , Fig.14 , Fig.16 , Fig.19 , Fig.25 and Fig.26 As shown, the ground metal layer 12 is provided with a second hollow portion 121, so that the radio frequency signal can be transmitted through the second hollow portion 121. Fig.25 and Fig.26 As shown, the vertical projection of the radiation electrode 23 on the plane where the ground metal layer 12 is located covers the second hollow portion 121, the radio frequency signal is transmitted between the phase shifter trace 13 and the ground metal layer 12, and the radio frequency signal is coupled to the radiation electrode 23 at the second hollow portion 121 of the ground metal layer 12, so that the radiation electrode 23 radiates the signal outward.

[0163] It should be noted that the radiation electrodes 23 are disposed correspondingly to the phase shifting units 11 , for example, the radiation electrodes 23 are disposed correspondingly to the phase shifting units 11 , and the radiation electrodes 23 corresponding to different phase shifting units 11 are insulated from each other.

[0164] Fig.29 A schematic diagram of the structure of another antenna provided by an embodiment of the present invention, Fig.30 for Fig.29 The schematic diagram of the cross-sectional structure along the E-E' direction is as follows: Fig.29 and Fig.30 As shown, optionally, the antenna provided in the embodiment of the present invention further includes a second insulating layer 24 , which is located on a side of the grounded metal layer 12 away from the phase shifter trace 13 , and the radiation electrode 23 is located on a side of the second insulating layer 24 away from the phase shifter trace 13 .

[0165] Specifically, Fig.29 and Fig.30 As shown, a second insulating layer 24 is provided between the radiation electrode 23 and the ground metal layer 12 to ensure insulation between the radiation electrode 23 and the ground metal layer 12, so that the radio frequency signal is coupled to the radiation electrode 23 at the second hollow portion 121 of the ground metal layer 12, thereby realizing that the radiation electrode 23 radiates the signal outward.

[0166] When preparing the antenna, the panel process can be used to prepare the second insulating layer 24 on the side of the ground metal layer 12 away from the phase shifter wiring 13, and the radiation electrode 23 can be prepared on the side of the second insulating layer 24 away from the phase shifter wiring 13. The process is mature and convenient for mass production.

[0167] The second insulating layer 24 may be an inorganic insulating layer to reduce the transmission loss of the radio frequency signal, thereby helping to improve the radiation performance of the phase shifter.

[0168] Fig.31 A schematic diagram of a partial cross-sectional structure of an antenna provided in an embodiment of the present invention is shown in FIG. Fig.31 As shown, optionally, the antenna provided in the embodiment of the present invention further includes a second substrate 25, which is located on a side of the ground metal layer 12 away from the phase shifter trace 13, and the radiation electrode 23 is located on a side of the second substrate 25 away from the phase shifter trace.

[0169] Specifically, Fig.31As shown, by setting a second substrate 25 between the radiation electrode 23 and the ground metal layer 12 to ensure insulation between the radiation electrode 23 and the ground metal layer 12, the radio frequency signal is coupled to the radiation electrode 23 at the second hollow portion 121 of the ground metal layer 12, so that the radiation electrode 23 radiates the signal outward.

[0170] When preparing the antenna, the radiation electrode 23 may be prepared on the second substrate 25, and then the side of the second substrate 25 away from the radiation electrode 23 may be bonded to the phase shifter, thereby realizing modular manufacturing with a simple process.

[0171] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A phase shifter, characterized in that: include: a first substrate; at least one phase shifting unit, wherein the phase shifting unit is disposed on the first substrate; The phase shift unit comprises a grounded metal layer and a phase shifter wiring, and at least one semiconductor structure is connected in series on the phase shifter wiring; The phase shifter trace and the semiconductor structure are located on the same side of the first substrate; The grounding metal layer is located on one side of the first substrate; The phase shifter wiring is insulated from the ground metal layer, and along the thickness direction of the first substrate, the phase shifter wiring at least partially overlaps with the ground metal layer; The semiconductor structure includes a semiconductor layer, a first metal layer and a second metal layer; The first metal layer is located between the semiconductor layer and the ground metal layer, and the first metal layer is insulated from the semiconductor layer; At least a portion of the second metal layer is located on a side of the semiconductor layer away from the first metal layer, and the second metal layer is at least partially in contact with and connected to the semiconductor layer; Along the thickness direction of the first substrate, the semiconductor layer, the first metal layer and the second metal layer have overlapping areas; The dielectric constant of the semiconductor layer changes according to a first voltage applied to the first metal layer.

2. The phase shifter according to claim 1, characterized in that: The phase shifter trace comprises a first end and a second end, the first end is used to feed in a radio frequency signal, and the second end is used to feed out a radio frequency signal; At least two wiring branches are included between the first end and the second end, and the lengths of at least two of the wiring branches are different, and at least one of the semiconductor structures is connected in series on each of the wiring branches; The semiconductor structure includes an on state and an off state; The semiconductor structure switches the on state or the off state according to the first voltage applied to the first metal layer to control the on and off of different routing branches.

3. The phase shifter according to claim 1, characterized in that The phase shifter line includes a first end and a second end, the first end is used to feed in a radio frequency signal, the second end is used to feed out a radio frequency signal, and the first end and the second end are the same end of the phase shifter line; The semiconductor structure includes an on state and an off state; The semiconductor structure switches the on state or the off state according to a first voltage applied to the first metal layer.

4. The phase shifter according to claim 2 or 3, characterized in that: The second metal layer includes a first sub-section and a second sub-section which are insulated from each other, and the first sub-section and the second sub-section are respectively connected to the phase shifter wiring; Along the thickness direction of the first substrate, the semiconductor layer, the first metal layer and the second sub-portion have overlapping areas, and the first sub-portion is located in different areas from the semiconductor layer and the first metal layer respectively; The impedance of the second section changes according to a first voltage applied to the first metal layer; When the semiconductor structure is in a conducting state, the impedance of the second sub-section is the same as the impedance of the first sub-section; When the semiconductor structure is in an off state, the impedance of the second section is different from the impedance of the first section.

5. The phase shifter according to claim 4, characterized in that: The first sub-portion has the same impedance as the phase shifter wiring.

6. The phase shifter according to claim 4, characterized in that Along the thickness direction of the first substrate, the projection of the first sub-portion on the first substrate is a first projection pattern, and the projection of the second sub-portion on the first substrate is a second projection pattern; Along a first direction, an overlapping length of the first projection pattern and the second projection pattern is greater than a width of the phase shifter wiring; The first direction is perpendicular to the thickness direction of the first substrate.

7. The phase shifter according to claim 1, characterized in that The second metal layer is connected in series between the phase shifter traces, and an impedance of the second metal layer is the same as an impedance of the phase shifter traces.

8. The phase shifter according to claim 1, characterized in that The phase shifter trace and the ground metal layer are located on different sides of the first substrate.

9. The phase shifter according to claim 1, characterized in that: The phase shifter trace and the ground metal layer are located on the same side of the first substrate.

10. The phase shifter according to claim 9, characterized in that An inorganic insulating layer is provided between the phase shifter wiring and the ground metal layer.

11. The phase shifter according to claim 9, characterized in that An organic insulating layer is provided between the phase shifter wiring and the ground metal layer.

12. The phase shifter according to claim 9, characterized in that The grounding metal layer is located on a side of the phase shifter trace away from the first substrate; or, The phase shifter wiring is located on a side of the grounding metal layer away from the first substrate.

13. The phase shifter according to claim 1, characterized in that The first metal layer includes a first hollow portion, and the first hollow portion at least partially overlaps with the second metal layer.

14. An antenna, characterized in that: The phase shifter comprises the phase shifter as claimed in any one of claims 1 to 13.

15. The antenna according to claim 14, characterized in that The antenna further includes a radiation electrode, and a vertical projection of the ground metal layer on the first substrate at least partially overlaps with a vertical projection of the radiation electrode on the first substrate.

16. The antenna according to claim 15, characterized in that The radiation electrode and the phase shifter wiring are arranged in the same layer, and the radiation electrode is connected to the phase shifter wiring.

17. The antenna according to claim 15, characterized in that The radiation electrode is located on a side of the ground metal layer away from the phase shifter wiring; The radiation electrode and the ground metal layer are insulated, and the ground metal layer includes a second hollow portion; Along the thickness direction of the first substrate, the radiation electrode covers the second hollow portion.

18. The antenna according to claim 17, characterized in that The antenna further comprises a second insulating layer, wherein the second insulating layer is located on a side of the ground metal layer away from the phase shifter wiring; The radiation electrode is located on a side of the second insulating layer away from the phase shifter wiring.

19. The antenna according to claim 17, characterized in that: The antenna further includes a second substrate, the second substrate being located on a side of the ground metal layer away from the phase shifter trace; The radiation electrode is located on a side of the second substrate away from the phase shifter wiring.

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