Electrostatic detection reticle for a lithography machine and method of detection

Abstract

The application provides an electrostatic detection mask for a photoetching machine and a detection method. The electrostatic detection mask for the photoetching machine comprises a first electrode plate, a second electrode plate and a conductive column. After a first detection is performed on the electrostatic detection mask for the photoetching machine by a mask detection machine and first detection information about the electrostatic detection mask for the photoetching machine is obtained, the electrostatic detection mask for the photoetching machine is used as a mask in a photoetching process in a photoetching machine to be detected, and then a second detection is performed on the electrostatic detection mask for the photoetching machine by the mask detection machine to obtain second detection information about the electrostatic detection mask for the photoetching machine. Thus, the electrostatic state of the photoetching machine can be determined by comparing the first detection information and the second detection information, and whether the photoetching machine generates electrostatic discharge can be detected. Therefore, the damage to the wafer and the mask can be avoided by adjusting the photoetching machine, and the financial and material resources can be saved.

Description

TECHNICAL FIELD

[0001] The application belongs to the field of semiconductor manufacturing, and relates to an electrostatic detection mask for a photolithography machine and a detection method. BACKGROUND

[0002] Electro-static discharge (ESD) is a process of rapid neutralization of electric charge. Because the ESD voltage is very high, ESD can cause destructive consequences to integrated circuits, resulting in failure of the integrated circuits. At present, various integrated circuits are widely used in various electrical appliances and fields, and the economic losses caused by the damage of integrated circuits due to ESD are very serious every year. Therefore, electrostatic protection has become a problem that needs to be paid close attention to in semiconductor manufacturing.

[0003] In the existing photolithography machine, in order to ensure the stability and good running state of the machine, various functions of monitoring are provided, but the test of electrostatic detection of the photolithography machine is rarely involved, and there is no method for testing whether the machine has static electricity. However, because ESD is a process of accumulation of electric charge, at any moment, static electricity hazard may occur. Once ESD occurs in the photolithography machine, on the one hand, defects may be caused in the wafer in the process, and on the other hand, the risk of damage to the mask is also great, thereby affecting the quality of the wafer and the mask, and causing significant loss of financial resources and material resources.

[0004] Therefore, it is necessary to provide an electrostatic detection mask for a photolithography machine and a detection method. SUMMARY

[0005] In view of the above-mentioned defects of the prior art, the purpose of the present application is to provide an electrostatic detection mask for a photolithography machine and a detection method, which is used to solve the problem of loss of financial resources and material resources caused by the lack of detection of ESD of the photolithography machine in the prior art.

[0006] To achieve the above-mentioned purpose and other related purposes, the present application provides an electrostatic detection mask for a photolithography machine, which comprises a first electrode plate, a second electrode plate and a conductive column located between the first electrode plate and the second electrode plate, and both ends of the conductive column are connected with the first electrode plate and the second electrode plate respectively.

[0007] Optionally, the conductive column comprises a plurality of conductive columns, and the plurality of conductive columns have different widths to constitute an electrostatic detection unit.

[0008] Optionally, the breakdown voltage of the conductive column is in the range of 1x10 4 V-1x10 6 V.

[0009] Optionally, the electrostatic detection mask for lithography machine comprises a plurality of the electrostatic detection units to form an electrostatic detection array.

[0010] The application also provides an electrostatic detection method for lithography machine, comprising the following steps:

[0011] An electrostatic detection mask for lithography machine is provided, which comprises a first electrode plate, a second electrode plate and a conductive column between the first electrode plate and the second electrode plate, and the two ends of the conductive column are connected with the first electrode plate and the second electrode plate respectively.

[0012] A mask detection machine is used to perform first detection on the electrostatic detection mask for lithography machine to obtain first detection information about the electrostatic detection mask for lithography machine.

[0013] The electrostatic detection mask for lithography machine is placed in a lithography machine to be detected, and the electrostatic detection mask for lithography machine is used as a mask to perform a lithography process.

[0014] The mask detection machine is used to perform second detection on the electrostatic detection mask for lithography machine to obtain second detection information about the electrostatic detection mask for lithography machine.

[0015] The first detection information and the second detection information are compared to determine the electrostatic state of the lithography machine.

[0016] Optionally, when the lithography process is performed, the area passed by the electrostatic detection mask for lithography machine includes one or a combination of a mask storage area, a mask transfer area and a mask alignment area.

[0017] Optionally, the first detection information and the second detection information are result information with the same detection items, wherein the detection items include a picture of the electrostatic detection mask for lithography machine or a size of the conductive column.

[0018] Optionally, in the electrostatic detection mask for lithography machine, the conductive column comprises a plurality of conductive columns, and the plurality of conductive columns have different widths to form an electrostatic detection unit.

[0019] Optionally, the breakdown voltage of the conductive column ranges from 1×10 4 V-1×10 6 V.

[0020] Optionally, in the electrostatic detection mask for lithography machine, a plurality of the electrostatic detection units are included to form an electrostatic detection array.

[0021] As described above, the electrostatic detection photo mask and detection method of the photolithography machine of the present application, through the photolithography machine electrostatic detection photo mask with the first electrode plate, the second electrode plate and the conductive column between the first electrode plate and the second electrode plate, after the first detection of the photolithography machine electrostatic detection photo mask by the photo mask detection machine, the first detection information about the photolithography machine electrostatic detection photo mask is obtained, then the photolithography machine electrostatic detection photo mask is used as a mask in the photolithography process in the photolithography machine to be detected, and the photo mask detection machine is used to detect the photolithography machine electrostatic detection photo mask to obtain the second detection information about the photolithography machine electrostatic detection photo mask, so that the electrostatic state of the photolithography machine can be determined by comparing the first detection information and the second detection information, so as to detect whether the photolithography machine produces electrostatic discharge, so as to avoid the damage to the wafer and the photo mask by adjusting the photolithography machine, so as to save the financial and material resources. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 The structure schematic diagram of the electrostatic detection unit of the photolithography machine electrostatic detection photo mask in the embodiment of the present application is shown.

[0023] Figure 2 The structure schematic diagram of the electrostatic detection array of the photolithography machine electrostatic detection photo mask in the embodiment of the present application is shown.

[0024] Figure 3 The flow schematic diagram of the photolithography machine electrostatic detection method in the embodiment of the present application is shown.

[0025] Figure 4 The layout structure schematic diagram of the photolithography machine in the embodiment of the present application is shown.

[0026] Element number explanation

[0027] 10 electrostatic detection unit

[0028] 20 electrostatic detection array

[0029] 101 first electrode plate

[0030] 102 second electrode plate

[0031] 201, 202, 203, 204, 205, conductive column 206, 207, 208, 209, 210

[0033] A1, A2 photo mask storage area

[0034] B photo mask transfer area

[0035] C photo mask alignment area

[0036] S1-S5 steps DETAILED DESCRIPTION

[0037] Those skilled in the art will readily owe, from the disclosure of this specification, further advantages and embodiments of the present application. The embodiments of the present application can be implemented or applied in other different embodiments, and the details in the specification can be modified or changed based on different views and applications without departing from the spirit of the present application.

[0038] As described in the detailed description of the embodiments of the present application, the cross-sectional view of the device structure is partially enlarged without the general proportion for the convenience of description, and the schematic view is only an example, which should not limit the scope of protection of the present application. In addition, the three-dimensional spatial dimensions of length, width and depth should be included in the actual manufacture.

[0039] For the convenience of description, spatial relationship words such as "under", "below", "lower", "under", "above", "upper" and the like can be used to describe the relationship of one element or feature with other elements or features shown in the drawings. It will be understood that these spatial relationship words are intended to include other directions of the device in use or operation in addition to the directions depicted in the drawings. In addition, when a layer is referred to as "between" two layers, it can be the only layer between the two layers, or one or more intervening layers can also be present. "Between" is used herein to include both end point values.

[0040] In the context of the present application, the structure described as the first feature "above" the second feature can include the embodiment in which the first and second features are formed in direct contact, and can also include the embodiment in which another feature is formed between the first and second features, so that the first and second features can not be in direct contact.

[0041] It should be noted that the diagrams provided in the embodiments only illustrate the basic concept of the present application in a schematic manner, and only the components related to the present application are shown in the diagrams, not the number, shape and size of the components when actually implemented. The actual implementation of each component can be a random change, and the component layout pattern can be more complex.

[0042] The present embodiment provides an electrostatic detection reticle for a photolithography machine, which includes a first electrode plate, a second electrode plate, and a conductive column between the first electrode plate and the second electrode plate, and the two ends of the conductive column are connected with the first electrode plate and the second electrode plate, respectively.

[0043] Specifically, by the electrostatic detection photo mask with conductivity of the photoetching machine, the electrostatic discharge of the photoetching machine can be detected. When the photoetching machine has electrostatic discharge, the electric charge will be guided to the first plate, the second plate and the conductive column through the detection of the electrostatic detection photo mask of the photoetching machine. The thinner the conductive column is, the more likely it is to be broken down due to high voltage, and the more likely it is to be broken or deformed due to the tip discharge effect. Therefore, by comparing the state of the electrostatic detection photo mask before and after entering and leaving the photoetching machine, the electrostatic condition of the photoetching machine can be obtained. Therefore, the electrostatic detection photo mask of the photoetching machine can be used to detect whether the photoetching machine has electrostatic discharge. In combination with the detection result, the staff can adjust the photoetching machine to solve the electrostatic discharge problem and avoid damage to the wafer and the photo mask, thereby saving financial and material resources.

[0044] As an example, the conductive column can include a plurality of conductive columns, and the plurality of conductive columns preferably have different widths to form an electrostatic detection unit. The breakdown voltage of the conductive column can be in the range of 1x10 4 V-1x10 6 V.

[0045] Specifically, as shown in Figure 1 , a structure diagram of one electrostatic detection unit 10 is shown. The electrostatic detection unit 10 includes a first plate 101, a second plate 102, and conductive columns 201, 202, 203, 204, 205, 206, 207, 208, 209 and 210 located between the first plate 101 and the second plate 102. The two ends of the conductive columns 201-210 are respectively connected to the first plate 101 and the second plate 102.

[0046] Preferably, the conductive columns 201-210 have different widths, so that the breakdown voltage of each conductive column 201-210 has a different range, so that the detection is more accurate and the detection range is more extensive.

[0047] As shown in Table 1 below, the breakdown voltage of each of the 10 different conductive columns in Figure 1 is shown in the table.

[0048]

[0049]

[0050] As an example, the electrostatic detection photo mask of the photoetching machine can include a plurality of electrostatic detection units 10 to form an electrostatic detection array 20.

[0051] Specifically, as shown in the figure, Figure 2 In this embodiment, the electrostatic detection mask of the photoetching machine adopts an electrostatic detection array 20 composed of a plurality of electrostatic detection units 10 to expand the detection range and improve the detection efficiency. The number and distribution of the electrostatic detection units 10 can be set as required, and are not limited here.

[0052] Further, in the electrostatic detection array 20, a plurality of electrostatic detection units 10 can have the same or different topography, which can be selected as required and is not limited here.

[0053] Referring to Figure 3 The embodiment also provides a photoetching machine electrostatic detection method. The structure and topography of the photoetching machine electrostatic mask used in the photoetching machine electrostatic detection method can be referred to the above description of the photoetching machine electrostatic mask, and will not be repeated here.

[0054] The photoetching machine electrostatic detection method in this embodiment includes the following steps:

[0055] S1: providing a photoetching machine electrostatic detection mask, the photoetching machine electrostatic detection mask comprising a first electrode plate, a second electrode plate, and a conductive column between the first electrode plate and the second electrode plate, and the two ends of the conductive column are connected with the first electrode plate and the second electrode plate, respectively;

[0056] S2: using a mask detection machine to perform first detection on the photoetching machine electrostatic detection mask to obtain first detection information about the photoetching machine electrostatic detection mask;

[0057] S3: placing the photoetching machine electrostatic detection mask in a photoetching machine to be detected, and using the photoetching machine electrostatic detection mask as a mask for a photoetching process;

[0058] S4: using the mask detection machine to perform second detection on the photoetching machine electrostatic detection mask to obtain second detection information about the photoetching machine electrostatic detection mask;

[0059] S5: comparing the first detection information and the second detection information to determine the electrostatic state of the photoetching machine.

[0060] As an example, during the photoetching process, the area passed by the photoetching machine electrostatic detection mask includes any one or combination of a mask storage area A1, a mask storage area A2, a mask transfer area B, and a mask alignment area C.

[0061] Specifically, when performing step S2, the first detection information of the electrostatic detection mask of the photolithography machine is obtained as a reference after the first detection of the electrostatic detection mask of the photolithography machine by the mask detection machine. After the photolithography process of step S3, the electrostatic detection mask has the electrostatic information of the photolithography machine. After step S4, the second detection information of the electrostatic detection mask of the photolithography machine after the photolithography process is obtained. Through the analysis and comparison of step S5, the electrostatic condition of the photolithography machine can be quickly and accurately determined.

[0062] The photolithography machine can include a mask storage area A1 and a mask storage area A2 for storing masks. The mask storage area A1 can be used as a mask storage area before photolithography, and the mask storage area A2 can be used as a mask storage area after photolithography. Since the area is used to store masks, when there is an electrostatic discharge phenomenon, it will cause damage to the masks, and then cause damage to the wafers. Therefore, it is necessary to detect the electrostatic discharge. The function of the mask transfer area B is mainly to transfer the mask from the mask storage area A1 to the mask alignment area C for subsequent photolithography. Therefore, the mask transfer area B has a manipulator for transferring the mask. Since the manipulator rotates, lifts, and operates, this area is the key detection area for electrostatic discharge. The mask alignment area C needs to be aligned for position alignment, so it is also an area prone to electrostatic discharge.

[0063] Therefore, according to the need, when performing step S2, the electrostatic detection mask of the photolithography machine can flow through the mask storage area A1, the mask storage area A2, the mask transfer area B, and the mask alignment area C in the photolithography machine, so that whether there is an electrostatic discharge in the entire photolithography machine can be known. After detection, if the photolithography machine has an electrostatic discharge, the above steps S3-S5 can be repeated to detect each area in the photolithography machine one by one, so that the electrostatic discharge area in the photolithography machine can be located.

[0064] Further, when the photolithography machine is detected to have an electrostatic discharge problem, but after detecting each area one by one, no electrostatic discharge phenomenon is found, it can be inferred that the mask has static electricity when it is delivered, such as a mask transfer cart. Therefore, through the operation of the embodiment, the electrostatic discharge condition of the photolithography machine can be effectively known, so that the electrostatic adjustment of the photolithography machine by the staff can solve the electrostatic discharge problem and avoid damage to the wafers and masks to save financial and material resources.

[0065] As an example, the first detection information and the second detection information can be result information with the same detection items, wherein the detection items can include pictures of the electrostatic detection mask of the photolithography machine or sizes of the conductive columns.

[0066] Specifically, taking the first detection information and the second detection information as pictures as an example, when a certain conductive column in the second detection information is found to have a wire breakage or deformation phenomenon, it can be determined that there is electrostatic discharge, and according to the specific position of the conductive column, the size of the electrostatic discharge can be estimated, so that the staff can make targeted adjustments. The types of result information corresponding to the detection items of the first detection information and the second detection information are not excessively limited here.

[0067] In summary, the photolithography machine electrostatic detection mask and the detection method of the present application, through the photolithography machine electrostatic detection mask with the first electrode plate, the second electrode plate and the conductive column between the first electrode plate and the second electrode plate, after the first detection of the photolithography machine electrostatic detection mask by the mask detection machine, the first detection information about the photolithography machine electrostatic detection mask is obtained, then the photolithography machine electrostatic detection mask is used as a mask in the photolithography process in the photolithography machine to be detected, and the second detection of the photolithography machine electrostatic detection mask is performed by the mask detection machine to obtain the second detection information about the photolithography machine electrostatic detection mask, so that the electrostatic state of the photolithography machine can be determined by comparing the first detection information and the second detection information, to detect whether the photolithography machine has electrostatic discharge problem, so that through the adjustment of the photolithography machine, the damage to the wafer and the mask can be avoided, and the financial and material resources can be saved.

[0068] The above embodiments only exemplarily illustrate the principles and effects of the present application, and are not used to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes completed by those skilled in the art without departing from the spirit and technical idea disclosed by the present application should be covered by the claims of the present application.

Claims

1. A photomask for electrostatic detection in a lithography machine, characterized in that, The electrostatic detection photomask of the lithography machine includes a first electrode plate (101), a second electrode plate (102), and conductive posts (201, 202, 203, 204, 205, 206, 207, 208, 209, 210) located between the first electrode plate (101) and the second electrode plate (102). The two ends of each conductive post (201, 202, 203, 204, 205, 206, 207, 208, 209, 210) are respectively connected to the first electrode plate (101) and the second electrode plate (102). The conductive posts (201, 202, 203, 204, 205, 206, 207, 208, 209, 210) include multiple posts, and the multiple conductive posts (201, 202, 203, 204, 205, 206, 207, 208, 209, 210) have different widths. The breakdown voltage that each conductive post can withstand has a different range, so as to form an electrostatic detection unit (10). When a conductive post experiences wire breakage or deformation, it is determined that there is electrostatic discharge. The magnitude of the electrostatic discharge can be estimated according to the specific location of the conductive post.

2. The electrostatic detection photomask for a lithography machine according to claim 1, characterized in that: The breakdown voltage of the conductive pillars (201, 202, 203, 204, 205, 206, 207, 208, 209, 210) ranges from 1×10⁻⁶. 4 V-1×10 6 V.

3. The electrostatic detection photomask for a lithography machine according to claim 1, characterized in that: The electrostatic detection mask of the lithography machine includes multiple electrostatic detection units (10) to form an electrostatic detection array (20).

4. A method for electrostatic detection in a lithography machine, characterized in that, Includes the following steps: A photomask for electrostatic detection in a lithography machine is provided. The photomask includes a first electrode plate (101), a second electrode plate (102), and conductive pillars (201, 202, 203, 204, 205, 206, 207, 208, 209, 210) located between the first electrode plate (101) and the second electrode plate (102). The two ends of the conductive pillars (201, 202, 203, 204, 205, 206, 207, 208, 209, 210) are respectively connected to the first electrode plate (101) and the second electrode plate (102). A photomask inspection machine is used to perform a first inspection on the electrostatic detection photomask of the lithography machine to obtain first inspection information about the electrostatic detection photomask of the lithography machine. The electrostatic detection photomask of the lithography machine is placed in the lithography machine to be tested, and the electrostatic detection photomask of the lithography machine is used as a mask for the lithography process. The photomask inspection machine is used to perform a second inspection on the electrostatic inspection photomask of the lithography machine to obtain second inspection information about the electrostatic inspection photomask of the lithography machine. The electrostatic state of the lithography machine is determined by comparing the first detection information and the second detection information. In the electrostatic detection photomask of the lithography machine, there are multiple conductive pillars (201, 202, 203, 204, 205, 206, 207, 208, 209, 210), and each conductive pillar has a different width. The breakdown voltage that each conductive pillar can withstand has a different range, so as to form an electrostatic detection unit (10). When a conductive pillar experiences wire breakage or deformation, it is determined that there is electrostatic discharge. The magnitude of the electrostatic discharge can be estimated according to the specific position of the conductive pillar.

5. The electrostatic detection method for a lithography machine according to claim 4, characterized in that: During the photolithography process, the area through which the electrostatic detection mask of the photolithography machine passes includes one or a combination of the mask storage area (A1, A2), the mask transfer area (B), and the mask alignment area (C).

6. The electrostatic detection method for a lithography machine according to claim 4, characterized in that: The first detection information and the second detection information are result information with the same detection items, wherein the detection items include the image of the electrostatic detection photomask of the lithography machine or the dimensions of the conductive pillars (201, 202, 203, 204, 205, 206, 207, 208, 209, 210).

7. The electrostatic detection method for a lithography machine according to claim 4, characterized in that: The breakdown voltage of the conductive pillars (201, 202, 203, 204, 205, 206, 207, 208, 209, 210) ranges from 1×10⁻⁶. 4 V-1×10 6 V.

8. The electrostatic detection method for a lithography machine according to claim 4, characterized in that: The electrostatic detection mask of the lithography machine includes a plurality of electrostatic detection units (10) to form an electrostatic detection array (20).

Images