High-frequency module and communication device

Abstract

The high-frequency module (1) has a plurality of external connection terminals (150). The plurality of external connection terminals (150) include: an antenna connection terminal (101) connected to one end of a filter (651) and one end of a filter (652); an antenna connection terminal (102) connected to the other end of the filter (651); an antenna connection terminal (103) connected to the other end of the filter (652); an antenna connection terminal (104) connected to a duplexer (61) and a transceiver filter (62) via a switch (51); and an antenna connection terminal (105) connected to a duplexer (63) and a transceiver filter (64) via a switch (51).

Description

Technical Field

[0001] The present invention relates to a high-frequency module and a communication device. Background Art

[0002] In mobile communication devices such as mobile phones, the requirements for high-frequency modules are diversifying. For example, in the high-frequency module of Patent Document 1, it is required to be connected to different antennas for each communication frequency band group such as a high-frequency band (HB) and a low-frequency band (LB).

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: U.S. Patent Application Publication No. 2015 / 0133067 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] However, the requirements for high-frequency modules are diversifying. For example, there is also a case where it is required to be connected to a common antenna via a multiplexer in multiple communication frequency band groups. In such a case, in the conventional high-frequency module, it is necessary to separately design and manufacture the product according to the requirements.

[0008] Therefore, the present invention provides a high-frequency module and a communication device capable of achieving product generalization.

[0009] Technical Solution for Solving the Problem

[0010] One aspect of the present invention relates to a high-frequency module including: a first filter having a passband including a first communication frequency band group; a second filter having a passband including a second communication frequency band group different from the first communication frequency band group; a third filter having a passband including a first communication frequency band included in the first communication frequency band group; a fourth filter having a passband including a second communication frequency band different from the first communication frequency band and included in the first communication frequency band group; a fifth filter having a passband including a third communication frequency band included in the second communication frequency band group; a sixth filter having a passband including a fourth communication frequency band different from the third communication frequency band and included in the second communication frequency band group; a switch connected to the third filter, the fourth filter, the fifth filter, and the sixth filter; a plurality of external connection terminals; and a module substrate on which the first filter, the second filter, the third filter, the fourth filter, the fifth filter, the sixth filter, the switch, and the plurality of external connection terminals are disposed. The plurality of external connection terminals include: a first external connection terminal connected to one end of the first filter and one end of the second filter; a second external connection terminal connected to the other end of the first filter; a third external connection terminal connected to the other end of the second filter; a fourth external connection terminal connected to the third filter and the fourth filter via the switch; and a fifth external connection terminal connected to the fifth filter and the sixth filter via the switch.

[0011] Advantages of the Invention

[0012] According to the high-frequency module of one aspect of the present invention, generalization of products can be achieved. Description of the Drawings

[0013] Figure 1 It is a circuit structure diagram of the high-frequency module according to Embodiment 1.

[0014] Figure 2 It is a circuit structure diagram of the communication device according to Example 1 of Embodiment 1.

[0015] Figure 3 It is a circuit structure diagram of the communication device according to Example 2 of Embodiment 1.

[0016] Figure 4 It is a top view of the high-frequency module according to Embodiment 1.

[0017] Figure 5 It is a top view of the high-frequency module according to Embodiment 1.

[0018] Figure 6 It is a cross-sectional view of the high-frequency module according to Embodiment 1.

[0019] Figure 7It is a circuit structure diagram of the high-frequency module related to Embodiment 2. Specific Embodiment

[0020] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, all the embodiments described below show general or specific examples. The numerical values, shapes, materials, constituent elements, arrangements of constituent elements, connection methods, etc. shown in the following embodiments are examples, and the gist thereof is not to limit the present invention.

[0021] In addition, each drawing is a schematic diagram in which the present invention is appropriately emphasized, omitted, or the ratio is adjusted, and is not necessarily drawn rigorously, and sometimes differs from the actual shape, positional relationship, and ratio. In each drawing, the same reference numerals are assigned to substantially the same structures, and repeated descriptions may be omitted or simplified.

[0022] In the following drawings, the x-axis and the y-axis are axes orthogonal to each other on a plane parallel to the main surface of the module substrate. Specifically, when the module substrate has a rectangular shape in plan view, the x-axis is parallel to the first side of the module substrate, and the y-axis is parallel to the second side of the module substrate orthogonal to the first side. In addition, the z-axis is an axis perpendicular to the main surface of the module substrate, the positive direction thereof represents the upward direction, and the negative direction thereof represents the downward direction.

[0023] In the circuit structure of the present invention, the term "connection" includes not only a case of direct connection through connection terminals and / or wiring conductors, but also a case of electrical connection via other circuit elements. The term "direct connection" means direct connection through connection terminals and / or wiring conductors without passing through other circuit elements. The term "connected between A and B" means connected between A and B and connected to both A and B.

[0024] In the component arrangement of the present invention, the term "distance between A and B" means the length of a line segment connecting a representative point in A and a representative point in B. Here, as the representative point, the center point of the object or the point closest to the other object can be used, but it is not limited thereto. In addition, terms indicating the relationality between elements such as "parallel" and "perpendicular", terms indicating the shape of elements such as "rectangle", and numerical ranges do not mean only strict meanings, but mean substantially equivalent ranges, for example, also include an error of about several percent.

[0025] In addition, the so-called "component is disposed on the substrate" includes not only the case where the component is disposed on the substrate in a state of being in contact with the substrate, but also the case where the component is disposed above the substrate without being in contact with the substrate (for example, the component is stacked on other components disposed on the substrate), and the case where a part or all of the component is embedded in the substrate. In addition, the so-called "component is disposed on the main surface of the substrate" includes not only the case where the component is disposed on the main surface in a state of being in contact with the main surface of the substrate, but also the case where the component is disposed above the main surface without being in contact with the main surface, and the case where a part of the component is embedded in the substrate from the main surface side. The so-called "A is disposed between B and C" means that at least one of a plurality of line segments connecting any point in B and any point in C passes through A.

[0026] (Embodiment 1)

[0027] [1.1 Circuit Structure of High-Frequency Module 1]

[0028] Refer to Figure 1 The circuit structure of the high-frequency module 1 according to the present embodiment will be described. Figure 1 It is a circuit structure diagram of the high-frequency module 1 according to Embodiment 1.

[0029] As Figure 1 shown, the high-frequency module 1 includes power amplifiers 11 and 12, low-noise amplifiers 21 and 22, switches 51 to 55, duplexers 61 and 63, transceiver filters 62 and 64, a diplexer 65, antenna connection terminals 101 to 105, high-frequency input terminals 111 and 112, and high-frequency output terminals 121 and 122.

[0030] The antenna connection terminals 101 to 105 are respectively examples of the first to fifth external connection terminals and are used for connecting to an antenna outside the high-frequency module 1. Inside the high-frequency module 1, the antenna connection terminal 101 is connected to one end of the filter 651 and one end of the filter 652. The antenna connection terminal 102 is connected to the other end of the filter 651 inside the high-frequency module 1. The antenna connection terminal 103 is connected to the other end of the filter 652 inside the high-frequency module 1. The antenna connection terminal 104 is connected to the duplexer 61 and the transceiver filter 62 via the switch 51 inside the high-frequency module 1. The antenna connection terminal 105 is connected to the duplexer 63 and the transceiver filter 64 via the switch 51 inside the high-frequency module 1.

[0031] The high-frequency input terminals 111 and 112 are each an example of the seventh external connection terminal, and are terminals for receiving high-frequency transmission signals from the outside of the high-frequency module 1. In the present embodiment, the high-frequency input terminal 111 is a terminal for receiving the transmission signals of communication bands A and B included in the communication band group X from the RFIC 3. The high-frequency input terminal 112 is a terminal for receiving the transmission signals of communication bands C and D included in the communication band group Y from the RFIC 3.

[0032] The high-frequency output terminals 121 and 122 are each an example of the sixth external connection terminal, and are terminals for providing high-frequency reception signals to the outside of the high-frequency module 1. In the present embodiment, the high-frequency output terminal 121 is a terminal for providing the reception signals of communication bands A and B included in the communication band group X to the RFIC 3. The high-frequency output terminal 122 is a terminal for providing the reception signals of communication bands C and D included in the communication band group Y to the RFIC 3.

[0033] The power amplifier 11 can amplify the transmission signals of communication bands A and B received by the high-frequency input terminal 111. Here, the input of the power amplifier 11 is connected to the high-frequency input terminal 111, and the output of the power amplifier 11 is connected to the switch 52.

[0034] The power amplifier 12 can amplify the transmission signals of communication bands C and D received by the high-frequency input terminal 112. Here, the input of the power amplifier 12 is connected to the high-frequency input terminal 112, and the output of the power amplifier 12 is connected to the switch 54.

[0035] In addition, the structures of the power amplifiers 11 and 12 are not particularly limited. For example, the power amplifiers 11 and / or 12 can be either a single-stage structure or a multi-stage structure. For example, the power amplifiers 11 and / or 12 can also have a plurality of amplification elements connected in cascade. In addition, the power amplifiers 11 and / or 12 can also amplify by converting the high-frequency signal into a differential signal (i.e., a complementary signal). Such power amplifiers 11 and / or 12 are sometimes referred to as differential amplifiers.

[0036] The low-noise amplifier 21 can amplify the reception signals of communication bands A and B. The reception signals of communication bands A and B amplified by the low-noise amplifier 21 are output to the high-frequency output terminal 121.

[0037] The low-noise amplifier 22 can amplify the reception signals of communication bands C and D. The reception signals of communication bands C and D amplified by the low-noise amplifier 22 are output to the high-frequency output terminal 122.

[0038] In addition, the structures of the low-noise amplifiers 21 and 22 are not particularly limited. For example, each of the low-noise amplifiers 21 and / or 22 can be either a single-stage structure or a multi-stage structure, and can also be a differential amplifier.

[0039] The duplexer 61 is an example of the third filter and has a passband including the communication band A. The duplexer 61 transmits the transmission signal and the reception signal of the communication band A in the FDD mode. The duplexer 61 includes a transmission filter 61T and a reception filter 61R.

[0040] The transmission filter 61T (A-Tx) has a passband including the uplink operating band of the communication band A. One end of the transmission filter 61T is connected to the antenna connection terminal 104 via the switch 51. The other end of the transmission filter 61T is connected to the output of the power amplifier 11 via the switch 52.

[0041] The reception filter 61R (A-Rx) has a passband including the downlink operating band of the communication band A. One end of the reception filter 61R is connected to the antenna connection terminal 104 via the switch 51. The other end of the reception filter 61R is connected to the input of the low-noise amplifier 21 via the switch 53.

[0042] In addition, the uplink operating band means a part that is a part of the communication band and is designated for uplink use. The uplink operating band is sometimes referred to as the transmission band. The downlink operating band means a part that is a part of the communication band and is designated for downlink use. The downlink operating band is sometimes referred to as the reception band.

[0043] The transceiver filter 62 (B-TRx) is an example of the fourth filter and has a passband including the communication band B. The transceiver filter 62 transmits the transmission signal and the reception signal of the communication band B in the TDD mode. One end of the transceiver filter 62 is connected to the antenna connection terminal 104 via the switch 51. The other end of the transceiver filter 62 is connected to the output of the power amplifier 11 via the switch 52, and is connected to the input of the low-noise amplifier 21 via the switches 52 and 53.

[0044] The duplexer 63 is an example of the fifth filter and has a passband including the communication band C. The duplexer 63 transmits the transmission signal and the reception signal of the communication band C in the FDD mode. The duplexer 63 includes a transmission filter 63T and a reception filter 63R.

[0045] The transmit filter 63T (C-Tx) has a passband that includes the uplink operating band of communication band C. One end of the transmit filter 63T is connected to the antenna connection terminal 105 via the switch 51. The other end of the transmit filter 63T is connected to the output of the power amplifier 12 via the switch 54.

[0046] The receive filter 63R (C-Rx) has a passband that includes the downlink operating band of communication band C. One end of the receive filter 63R is connected to the antenna connection terminal 105 via the switch 51. The other end of the receive filter 63R is connected to the input of the low-noise amplifier 22 via the switch 55.

[0047] The transceiver filter 64 (D-TRx) is an example of the sixth filter and has a passband that includes communication band D. The transceiver filter 64 transmits the transmit signal and the receive signal of communication band D in a TDD manner. One end of the transceiver filter 64 is connected to the antenna connection terminal 105 via the switch 51. The other end of the transceiver filter 64 is connected to the output of the power amplifier 12 via the switch 54, and is connected to the input of the low-noise amplifier 22 via the switches 54 and 55.

[0048] The duplexer 65 includes: two filters 651 and 652, each having two passbands that are different from each other. In the duplexer 65, the filters 651 and 652 are bundled and connected to one antenna connection terminal 101.

[0049] The filter 651 is an example of the first filter and has a passband that includes the communication band group X. That is, the filter 651 allows the signals of each communication band included in the communication band group X to pass through. One end of the filter 651 is connected to the antenna connection terminal 101, and the other end of the filter 651 is connected to the antenna connection terminal 102.

[0050] The filter 652 is an example of the second filter and has a passband that includes the communication band group Y. That is, the filter 652 allows the signals of each communication band included in the communication band group Y to pass through. One end of the filter 652 is connected to the antenna connection terminal 101, and the other end of the filter 652 is connected to the antenna connection terminal 103.

[0051] In addition, a communication frequency band group means a frequency range including multiple communication frequency bands. A communication frequency band means a frequency band predefined for a communication system by a standardization organization or the like (such as 3GPP (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers)). A communication system means a communication system constructed using radio access technology (RAT).

[0052] As the communication frequency band group, for example, the super high frequency band group (3300 - 5000 MHz), the high frequency band group (2300 - 2690 MHz), the medium frequency band group (1427 - 2200 MHz), the low frequency band group (698 - 960 MHz), etc. can be used, but not limited to these. For example, as the communication frequency band group, a communication frequency band group including an unlicensed band above 5 gigahertz or a communication frequency band group in the millimeter wave band can also be used.

[0053] As the communication system, for example, the 5GNR (5th Generation New Radio) system, the LTE (Long Term Evolution) system, the WLAN (Wireless Local Area Network) system, etc. can be used, but not limited thereto.

[0054] The communication frequency band group X is an example of the first communication frequency band group. As the communication frequency band group X, for example, the high frequency band group can be used, but not limited thereto.

[0055] The communication frequency band group Y is an example of the second communication frequency band group and is located on the lower frequency side than the communication frequency band group X. As the communication frequency band group Y, for example, the medium frequency band group can be used, but not limited thereto.

[0056] The communication frequency band A is an example of the first communication frequency band and is included in the communication frequency band group X. In this embodiment, as the communication frequency band A, a communication frequency band for frequency division duplex (FDD) is used. More specifically, as the communication frequency band A, at least one of Band7 for LTE and n7 for 5GNR can be used, but the communication frequency band A is not limited to these.

[0057] Communication frequency band B is an example of the second communication frequency band, which is included in communication frequency band group X but is different from communication frequency band A. In the present embodiment, as communication frequency band B, a communication frequency band for time division duplex (TDD: Time Division Duplex) is used. More specifically, as communication frequency band B, at least one of Band41 and Band40 for LTE and n41 and n40 for 5GNR can be used, but communication frequency band B is not limited to these.

[0058] Communication frequency band C is an example of the third communication frequency band, which is included in communication frequency band group Y. In the present embodiment, as communication frequency band C, a communication frequency band for FDD is used. More specifically, as communication frequency band C, at least one of Band1, Band25, Band3, and Band66 for LTE and n1, n25, n3, and n66 for 5GNR can be used, but communication frequency band C is not limited to these.

[0059] Communication frequency band D is an example of the fourth communication frequency band, which is included in communication frequency band group Y but is different from communication frequency band C. In the present embodiment, as communication frequency band D, a communication frequency band for TDD is used. More specifically, as communication frequency band D, at least one of Band34 and Band39 for LTE and n34 and n39 for 5GNR can be used, but communication frequency band D is not limited to these.

[0060] Switch 51 is connected to duplexers 61 and 63 and transceiver filters 62 and 64. Switch 51 has terminals 511 to 516. Terminals 511 and 512 are respectively connected to antenna connection terminals 104 and 105. Terminals 513 to 516 are respectively connected to duplexer 61, transceiver filter 62, duplexer 63, and transceiver filter 64.

[0061] In this connection structure, switch 51 can, for example, based on a control signal from RFIC3, connect terminal 511 to either of terminals 513 and 514, and connect terminal 512 to either of terminals 515 and 516. That is, switch 51 can connect antenna connection terminal 104 to either of duplexer 61 and transceiver filter 62, and connect antenna connection terminal 105 to either of duplexer 63 and transceiver filter 64. Switch 51 is composed of, for example, two single-pole double-throw (SPDT) type switch circuits and is sometimes referred to as an antenna switch.

[0062] The switch 52 is connected between the transmit filter 61T, the transceiver filter 62, and the power amplifier 11, and is also connected between the transceiver filter 62 and the low-noise amplifier 21. The switch 52 has terminals 521 to 524. The terminals 521 and 522 are respectively connected to the transmit filter 61T and the transceiver filter 62. The terminal 523 is connected to the output of the power amplifier 11. The terminal 524 is connected to the terminal 532 of the switch 53 and is connected to the input of the low-noise amplifier 21 via the switch 53.

[0063] In this connection structure, the switch 52 can, for example, based on a control signal from the RFIC 3, connect the terminal 521 to the terminal 523 and connect the terminal 522 to either the terminal 523 or 524. That is, the switch 52 can switch the connection and disconnection between the transmit filter 61T and the power amplifier 11, and can also switch the connection and disconnection between the transceiver filter 62 and the power amplifier 11 and the low-noise amplifier 21 respectively. The switch 52 is constituted by, for example, a multi-connection type switch circuit.

[0064] The switch 53 is connected between the receive filter 61R and the low-noise amplifier 21, and is also connected between the transceiver filter 62 and the low-noise amplifier 21. The switch 53 has terminals 531 to 533. The terminal 531 is connected to the input of the low-noise amplifier 21. The terminal 532 is connected to the terminal 524 of the switch 52 and is connected to the transceiver filter 62 via the switch 52. The terminal 533 is connected to the receive filter 61R.

[0065] In this connection structure, the switch 53 can, for example, based on a control signal from the RFIC 3, connect the terminal 532 and / or 533 to the terminal 531. That is, the switch 53 can switch the connection and disconnection between the receive filter 61R and the low-noise amplifier 21, and can also switch the connection and disconnection between the transceiver filter 62 and the low-noise amplifier 21. The switch 53 is constituted by, for example, a multi-connection type switch circuit.

[0066] The switch 54 is connected between the transmit filter 63T, the transceiver filter 64, and the power amplifier 12, and is connected between the transceiver filter 64 and the low-noise amplifier 22 via the switch 55. The switch 54 has terminals 541 to 544. The terminals 541 and 542 are respectively connected to the transmit filter 63T and the transceiver filter 64. The terminal 543 is connected to the output of the power amplifier 12. The terminal 544 is connected to the terminal 552 of the switch 55 and is connected to the input of the low-noise amplifier 22 via the switch 55.

[0067] In this connection structure, the switch 54 can, for example, connect the terminal 541 to the terminal 543 and connect the terminal 542 to either the terminal 543 or 544 based on a control signal from the RFIC3. That is, the switch 54 can switch between connecting and disconnecting the transmit filter 63T and the power amplifier 12, and can also switch between connecting and disconnecting the transceiver filter 64, the power amplifier 12, and the low-noise amplifier 22 respectively. The switch 54 is constituted by a multi-connection type switch circuit, for example.

[0068] The switch 55 is connected between the receive filter 63R and the low-noise amplifier 22, and is connected between the transceiver filter 64 and the low-noise amplifier 22 via the switch 54. The switch 55 has terminals 551 to 553. The terminal 551 is connected to the input of the low-noise amplifier 22. The terminal 552 is connected to the terminal 544 of the switch 54 and is connected to the transceiver filter 64 via the switch 54. The terminal 553 is connected to the receive filter 63R.

[0069] In this connection structure, the switch 55 can, for example, connect the terminal 552 and / or 553 to the terminal 551 based on a control signal from the RFIC3. That is, the switch 55 can switch between connecting and disconnecting the receive filter 63R and the low-noise amplifier 22, and can also switch between connecting and disconnecting the transceiver filter 64 and the low-noise amplifier 22. The switch 55 is constituted by a multi-connection type switch circuit, for example.

[0070] In addition, Figure 1 Some of the illustrated circuit elements may not be included in the high-frequency module 1. For example, the high-frequency module 1 only needs to include at least the power amplifiers 11 and 12, the switch 51, the transmit filter 61T or the transceiver filter 62, and the transmit filter 63T or the transceiver filter 64, and may not include other circuit elements.

[0071] For another example, the high-frequency module 1 may not include the switch 53. In this case, the high-frequency module 1 may include two low-noise amplifiers instead of the low-noise amplifier 21. At this time, it may be that the other end of the receive filter 61R is connected to one of the two low-noise amplifiers, and the other end of the transceiver filter 62 is connected to the other of the two low-noise amplifiers via the switch 52.

[0072] Similarly, the high-frequency module 1 may not include the switch 55. In this case, the high-frequency module 1 may include two low-noise amplifiers instead of the low-noise amplifier 22. At this time, it may be that the other end of the receive filter 63R is connected to one of the two low-noise amplifiers, and the other end of the transceiver filter 64 is connected to the other of the two low-noise amplifiers via the switch 54.

[0073] [1.2 Circuit Structure of Communication Devices 5A and 5B]

[0074] Next, with reference to Figure 2 and Figure 3 an embodiment of a communication device including the high-frequency module 1 configured as described above will be described. Figure 2 FIG. is a circuit configuration diagram of a communication device 5A according to Embodiment 1 of the first embodiment. Figure 3 FIG. is a circuit configuration diagram of a communication device 5B according to Embodiment 2 of the first embodiment.

[0075] First, the common circuit structure of the communication devices 5A and 5B according to Embodiments 1 and 2 will be described.

[0076] As shown in Figure 2 and Figure 3 the communication devices 5A and 5B include a high-frequency module 1, an RFIC 3, and a BBIC 4.

[0077] The high-frequency module 1 transmits high-frequency signals between the antenna 2 or antennas 2A and 2B and the RFIC 3.

[0078] The RFIC 3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, the RFIC 3 processes a high-frequency reception signal input via the reception path of the high-frequency module 1 by down-conversion or the like, and outputs the reception signal generated by this signal processing to the BBIC 4. In addition, the RFIC 3 processes a transmission signal input from the BBIC 4 by up-conversion or the like, and outputs the high-frequency transmission signal generated by this signal processing to the transmission path of the high-frequency module 1. In addition, the RFIC 3 has a control unit that controls switches and amplifiers included in the high-frequency module 1. Further, part or all of the functions of the RFIC 3 as the control unit may be installed outside the RFIC 3, for example, in the BBIC 4 or the high-frequency module 1.

[0079] The BBIC 4 is a baseband signal processing circuit that processes signals using an intermediate frequency band lower than the high-frequency signals transmitted by the high-frequency module 1. As signals processed by the BBIC 4, for example, an image signal for image display and / or a voice signal for a call via a speaker can be used.

[0080] In addition, in the communication devices 5A and 5B, the BBIC 4 is not an essential component.

[0081] [1.2.1 Embodiment 1]

[0082] Here, the characteristic structure of the communication device 5A according to Embodiment 1 will be described. The communication device 5A further includes an antenna 2.

[0083] The antenna 2 is connected to the antenna connection terminal 101 of the high-frequency module 1, transmits the high-frequency signal output from the high-frequency module 1, and in addition, receives the high-frequency signal from the outside and outputs it to the high-frequency module 1.

[0084] The antenna connection terminals 102 and 104 of the high-frequency module 1 are directly connected, and the antenna connection terminals 103 and 105 are directly connected. That is, a short circuit is formed between the antenna connection terminals 102 and 104, and a short circuit is formed between the antenna connection terminals 103 and 105. As a result, the duplexer 65 becomes effective, and the switch 51 of the high-frequency module 1 is connected to the antenna 2 via the duplexer 65.

[0085] In addition, in the communication device 5A, the antenna 2 is not an essential component.

[0086] [1.2.2 Embodiment 2]

[0087] Next, the characteristic structure in the communication device 5B according to Embodiment 2 will be described. The communication device 5B further includes antennas 2A and 2B. The antennas 2A and 2B are examples of the first antenna and the second antenna respectively, transmit the high-frequency signal output from the high-frequency module 1, and in addition, receive the high-frequency signal from the outside and output it to the high-frequency module 1.

[0088] The antenna connection terminal 104 of the high-frequency module 1 is connected to the antenna 2A, and the antenna connection terminal 105 is connected to the antenna 2B. As a result, the duplexer 65 becomes ineffective, and the switch 51 of the high-frequency module 1 is connected to the antennas 2A and 2B without passing through the duplexer 65.

[0089] In addition, in the communication device 5B, the antennas 2A and 2B are not essential components.

[0090] [1.3 Component Arrangement of High-Frequency Module 1]

[0091] Next, with reference to Figures 4 - 6 The component arrangement of the high-frequency module 1 configured as described above will be specifically described.

[0092] Figure 4 is a top view of the high-frequency module 1 according to Embodiment 1. Specifically, Figure 4 shows a view of observing the main surface 91a of the module substrate 91 from the positive side of the z-axis. Figure 5 is a top view of the high-frequency module 1 according to Embodiment 1. Specifically, Figure 5 shows a perspective view of the main surface 91b of the module substrate 91 from the positive side of the z-axis. Figure 6 is a cross-sectional view of the high-frequency module 1 according to Embodiment 1. Figure 6 The cross-section of the high-frequency module 1 in Figure 4 and Figure 5 is the cross-section at the vi-vi line.

[0093] As Figures 4 - 6 shown, in addition to the circuit components including the Figure 1 circuit components shown, the high-frequency module 1 further includes a module substrate 91, a resin member 92, a shielding electrode layer 95, and a plurality of external connection terminals 150. In addition, in Figure 4 and Figure 5 , the illustration of the resin member 92 and the shielding electrode layer 95 is omitted.

[0094] The module substrate 91 has main surfaces 91a and 91b that face each other. In the present embodiment, the module substrate 91 has a rectangular shape in a top view, but the shape of the module substrate 91 is not limited thereto. As the module substrate 91, for example, a low-temperature co-fired ceramic (LTCC) substrate, a high-temperature co-fired ceramic (HTCC) substrate, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed substrate having a laminated structure with a plurality of dielectric layers can be used, but it is not limited to these.

[0095] The main surface 91a is an example of the first main surface and is sometimes referred to as the upper surface or the surface. On the main surface 91a, a power amplifier 11 and 12, low-noise amplifiers 21 and 22, switches 51 to 55, circulators 61 and 63, transceiver filters 62 and 64, and a resin member 92 are arranged.

[0096] The low-noise amplifiers 21 and 22 and the switches 53 and 55 are built in the semiconductor integrated circuit 20. The semiconductor integrated circuit 20 is an electronic component having an electronic circuit formed on the surface and inside of a semiconductor chip (also referred to as a die). The semiconductor integrated circuit 20 is formed of, for example, CMOS (Complementary Metal Oxide Semiconductor), and specifically, it can also be formed by an SOI (Silicon on Insulator) process. Thus, the semiconductor integrated circuit 20 can be manufactured at low cost. In addition, the semiconductor integrated circuit 20 may be formed of at least one of GaAs, SiGe, and GaN. Thus, a high-quality semiconductor integrated circuit 20 can be realized.

[0097] The transmission filters 61T and 63T, the reception filters 61R and 63R, the transceiver filters 62 and 64, and the sum filters 651 and 652 may each be, for example, any one of a surface acoustic wave filter, a bulk acoustic wave (BAW) filter, an LC resonance filter, and a dielectric filter, and furthermore, are not limited to these.

[0098] The resin member 92 is disposed on the main surface 91a of the module substrate 91 and covers the main surface 91a and the circuit components on the main surface 91a. The resin member 92 has a function of ensuring the mechanical strength and reliability such as moisture resistance of the components on the main surface 91a.

[0099] The shielding electrode layer 95 is, for example, a metal thin film formed by a sputtering method, and is formed to cover the upper surface and the side surface of the resin member 92 and the side surface of the module substrate 91. The shielding electrode layer 95 is set to a ground potential to suppress the intrusion of external noise into the circuit components constituting the high-frequency module 1.

[0100] The main surface 91b is an example of the second main surface and is sometimes referred to as the lower surface or the back surface. A plurality of external connection terminals 150 are disposed on the main surface 91b.

[0101] The plurality of external connection terminals 150 include Figure 1 the shown antenna connection terminals 101 to 105, the high-frequency input terminals 111 and 112, and the high-frequency output terminals 121 and 122, and also include a ground terminal GND. Each of the plurality of external connection terminals 150 is connected to an input / output terminal and / or a ground terminal or the like disposed on a mother substrate in the negative z-axis direction of the high-frequency module 1. As the plurality of external connection terminals 150, pad electrodes can be used, but are not limited thereto.

[0102] As Figure 5 shown, several of the plurality of external connection terminals 150 are arranged and disposed along the outer edge of the main surface 91b in a peripheral region surrounding a central region including the center of the main surface 91b. The antenna connection terminals 102 and 104 are included in several of the plurality of external connection terminals 150 disposed in the peripheral region and are disposed adjacent to each other. In addition, the antenna connection terminals 103 and 105 are also included in several of the plurality of external connection terminals 150 disposed in the peripheral region and are disposed adjacent to each other.

[0103] A ground terminal GND is disposed between the antenna connection terminals 102 and 103. Among Figure 5 them, the right ground terminal GND among the two ground terminals GND disposed in the central region of the main surface 91b is disposed between the antenna connection terminals 102 and 103.

[0104] A ground terminal GND is disposed between antenna connection terminals 104 and 105. In Figure 5 among the two ground terminals GND disposed in the central region of the main surface 91b, the right ground terminal GND is disposed between antenna connection terminals 104 and 105.

[0105] A ground terminal GND is disposed between antenna connection terminals 101 and 102. In Figure 5 in the peripheral region of the main surface 91b, antenna connection terminal 102, ground terminal GND, and antenna connection terminal 101 are arranged in sequence along the x-axis.

[0106] The distance d1 between antenna connection terminals 101 and 102 is shorter than the distance d11 between antenna connection terminal 102 and high-frequency input terminal 111, and is shorter than the distance d12 between antenna connection terminal 102 and high-frequency input terminal 112. In addition, the distance d1 between antenna connection terminals 101 and 102 is shorter than the distance d13 between antenna connection terminal 102 and high-frequency output terminal 121, and is shorter than the distance d14 between antenna connection terminal 102 and high-frequency output terminal 122.

[0107] A ground terminal GND is disposed between antenna connection terminals 101 and 103. In Figure 5 in the peripheral region of the main surface 91b, antenna connection terminal 103, ground terminal GND, and antenna connection terminal 101 are arranged in sequence along the y-axis.

[0108] The distance d2 between antenna connection terminals 101 and 103 is shorter than the distance d21 between antenna connection terminal 103 and high-frequency input terminal 111, and is shorter than the distance d22 between antenna connection terminal 103 and high-frequency input terminal 112. In addition, the distance d2 between antenna connection terminals 101 and 103 is shorter than the distance d23 between antenna connection terminal 103 and high-frequency output terminal 121, and is shorter than the distance d24 between antenna connection terminal 103 and high-frequency output terminal 122.

[0109] [1.4 Effects, etc.]

[0110] As described above, the high-frequency module 1 according to the present embodiment includes: a filter 651 having a passband including a communication frequency band group X; a filter 652 having a passband including a communication frequency band group Y different from the communication frequency band group X; a duplexer 61 having a passband including a communication frequency band A, where the communication frequency band A is included in the communication frequency band group X; a transceiver filter 62 having a passband including a communication frequency band B different from the communication frequency band A, where the communication frequency band B is included in the communication frequency band group X; a duplexer 63 having a passband including a communication frequency band C, where the communication frequency band C is included in the communication frequency band group Y; a transceiver filter 64 having a passband including a communication frequency band D different from the communication frequency band C, where the communication frequency band D is included in the communication frequency band group Y; a switch 51 connected to the duplexer 61, the transceiver filter 62, the duplexer 63, and the transceiver filter 64; a plurality of external connection terminals 150; and a module substrate 91 on which the filter 651, the filter 652, the duplexer 61, the transceiver filter 62, the duplexer 63, the transceiver filter 64, the switch 51, and the plurality of external connection terminals 150 are arranged. The plurality of external connection terminals 150 include: an antenna connection terminal 101 connected to one end of the filter 651 and one end of the filter 652; an antenna connection terminal 102 connected to the other end of the filter 651; an antenna connection terminal 103 connected to the other end of the filter 652; an antenna connection terminal 104 connected to the duplexer 61 and the transceiver filter 62 via the switch 51; and an antenna connection terminal 105 connected to the duplexer 63 and the transceiver filter 64 via the switch 51.

[0111] Accordingly, by using the antenna connection terminals 101 to 105, the high-frequency module 1 can be used in both a communication device 5A that is required to be connected to one antenna 2 and a communication device 5B that is required to be connected to two antennas 2A and 2B. Specifically, by connecting the antenna 2 to the antenna connection terminal 101, short-circuiting between the antenna connection terminals 102 and 104, and short-circuiting between the antenna connection terminals 103 and 105, the high-frequency module 1 can be used in the communication device 5A that is required to be connected to one antenna 2. In addition, by connecting the antenna 2A to the antenna connection terminal 104 and connecting the antenna 2B to the antenna connection terminal 105, the high-frequency module 1 can be used in the communication device 5B that is required to be connected to two antennas 2A and 2B. Therefore, in two communication devices with different requirements, the generalization of high-frequency module products can be achieved.

[0112] For another example, in the high-frequency module 1 according to the present embodiment, the antenna connection terminals 102 and 104 may be arranged adjacent to each other on the same main surface of the module substrate 91, and the antenna connection terminals 103 and 105 may be arranged adjacent to each other on the same main surface of the module substrate 91.

[0113] Thus, by directly connecting two adjacent terminals, it is possible to simply short-circuit between antenna connection terminals 102 and 104, and short-circuit between antenna connection terminals 103 and 105. In addition, it is possible to shorten the wiring lengths between antenna connection terminals 102 and 104, and between antenna connection terminals 103 and 105 to reduce wiring losses, and improve the electrical characteristics of the high-frequency module 1 (such as noise figure (NF), etc.).

[0114] For another example, in the high-frequency module 1 according to the present embodiment, the plurality of external connection terminals 150 may also include a ground terminal GND that is set to a ground potential and disposed between antenna connection terminals 102 and 103.

[0115] Thus, it is possible to increase the isolation between antenna connection terminals 102 and 103 that transmit signals of different communication frequency band groups, and improve the electrical characteristics of the high-frequency module 1.

[0116] For another example, in the high-frequency module 1 according to the present embodiment, the plurality of external connection terminals 150 may also include a ground terminal GND that is set to a ground potential and disposed between antenna connection terminals 104 and 105.

[0117] Thus, it is possible to increase the isolation between antenna connection terminals 104 and 105 that transmit signals of different communication frequency band groups, and improve the electrical characteristics of the high-frequency module 1.

[0118] For another example, in the high-frequency module 1 according to the present embodiment, the plurality of external connection terminals 150 may also include a ground terminal GND that is set to a ground potential and disposed between antenna connection terminals 101 and 102.

[0119] Thus, it is possible to increase the isolation between antenna connection terminal 101 that transmits signals of both two communication frequency band groups and antenna connection terminal 102 that transmits signals of only one of the two communication frequency band groups, and improve the electrical characteristics of the high-frequency module 1.

[0120] For another example, in the high-frequency module 1 according to the present embodiment, the plurality of external connection terminals 150 may also include a ground terminal GND that is set to a ground potential and disposed between antenna connection terminals 101 and 103.

[0121] Thus, it is possible to increase the isolation between antenna connection terminal 101 that transmits signals of both two communication frequency band groups and antenna connection terminal 103 that transmits signals of only one of the two communication frequency band groups, and improve the electrical characteristics of the high-frequency module 1.

[0122] For another example, in the high-frequency module 1 according to the present embodiment, it is also possible that the plurality of external connection terminals 150 further include high-frequency output terminals 121 and / or 122 for supplying a high-frequency reception signal to the outside, and the distance d1 between the antenna connection terminals 101 and 102 is shorter than the distances d13 and / or d14 between the antenna connection terminal 102 and the high-frequency output terminals 121 and / or 122, and the distance d2 between the antenna connection terminals 101 and 103 is shorter than the distances d23 and / or d24 between the antenna connection terminal 103 and the high-frequency output terminals 121 and / or 122.

[0123] Thereby, the distance d1 between the antenna connection terminals 101 and 102 can be made relatively short, and the wiring length between the antenna connection terminals 101 and 102 can be shortened. Therefore, the wiring loss can be reduced, and the electrical characteristics of the high-frequency module 1 can be improved.

[0124] For another example, in the high-frequency module 1 according to the present embodiment, it is also possible that the plurality of external connection terminals 150 further include high-frequency input terminals 111 and / or 112 for receiving a high-frequency transmission signal from the outside, and the distance d1 between the antenna connection terminals 101 and 102 is shorter than the distances d11 and / or d12 between the antenna connection terminal 102 and the high-frequency input terminals 111 and / or 112, and the distance d2 between the antenna connection terminals 101 and 103 is shorter than the distances d21 and / or d22 between the antenna connection terminal 103 and the high-frequency input terminals 111 and / or 112.

[0125] Thereby, the distance d2 between the antenna connection terminals 101 and 103 can be made relatively short, and the wiring length between the antenna connection terminals 101 and 103 can be shortened. Therefore, the wiring loss can be reduced, and the electrical characteristics of the high-frequency module 1 can be improved.

[0126] For another example, in the high-frequency module 1 according to the present embodiment, the communication frequency band group X may also have a frequency range of 2300 MHz or more and less than 2690 MHz.

[0127] Thereby, the high-frequency module 1 can be used in communication in the so-called high-frequency band group.

[0128] For another example, in the high-frequency module 1 according to the present embodiment, the communication frequency band A may also include at least one of Band 7 for LTE and n7 for 5G NR.

[0129] Thereby, the high-frequency module 1 can be used in communication in the communication frequency bands of LTE and / or 5G NR belonging to the high-frequency band group.

[0130] For example, in the high-frequency module 1 according to the present embodiment, the communication frequency band B may also include at least one of Band41 and Band40 for LTE, and n41 and n40 for 5GNR.

[0131] Accordingly, the high-frequency module 1 can be used for transmitting and / or receiving signals of communication frequency bands for LTE and / or 5GNR belonging to the high-frequency band group.

[0132] For example, in the high-frequency module 1 according to the present embodiment, the communication frequency band group Y may also have a frequency range of 1427 MHz or more and less than 2200 MHz.

[0133] Accordingly, the high-frequency module 1 can be used for communication in the so-called mid-frequency band group.

[0134] For example, in the high-frequency module 1 according to the present embodiment, the communication frequency band C may also include at least one of Bandl, Band25, Band3, and Band66 for LTE, and n1, n25, n3, and n66 for 5GNR.

[0135] Accordingly, the high-frequency module 1 can be used for transmitting and / or receiving signals of communication frequency bands for LTE and / or 5GNR belonging to the mid-frequency band group.

[0136] For example, in the high-frequency module 1 according to the present embodiment, the communication frequency band D may also include at least one of Band34 and Band39 for LTE, and n34 and n39 for 5GNR.

[0137] Accordingly, the high-frequency module 1 can be used for transmitting and / or receiving signals of communication frequency bands for LTE and / or 5GNR belonging to the mid-frequency band group.

[0138] In addition, the communication devices 5A and 5B according to the present embodiment include: an RFIC 3 that processes high-frequency signals; and a high-frequency module 1 that transmits high-frequency signals between the RFIC 3 and at least one antenna.

[0139] Accordingly, the communication devices 5A and 5B can achieve the same effects as the above high-frequency module 1.

[0140] For example, in the communication device 5A according to the present embodiment, it may be that the antenna connection terminal 101 is connected to at least one antenna 2, the antenna connection terminals 102 and 104 are short-circuited, and the antenna connection terminals 103 and 105 are short-circuited.

[0141] Accordingly, the communication device 5A can perform communication based on two communication frequency band groups using one antenna 2.

[0142] For example, in the communication device 5B according to the present embodiment, at least one antenna may include antennas 2A and 2B, the antenna connection terminal 104 is connected to the antenna 2A, and the antenna connection terminal 105 is connected to the antenna 2B.

[0143] Thus, the communication device 5B can communicate based on two communication frequency band groups using two antennas 2A and 2B.

[0144] (Embodiment 2)

[0145] Next, Embodiment 2 will be described. In the present embodiment, the main difference from the above-described Embodiment 1 is that the high-frequency module has a structure capable of communicating using three communication frequency band groups. Hereinafter, this embodiment will be described with reference to the drawings centering on the differences from the above-described Embodiment 1.

[0146] [2.1 Circuit Structure of High-Frequency Module 1A]

[0147] Refer to Figure 7 The circuit structure of the high-frequency module 1A according to the present embodiment will be described. Figure 7 FIG. is a circuit structure diagram of the high-frequency module 1A according to Embodiment 2.

[0148] As Figure 7 shown, the high-frequency module 1A includes power amplifiers 11 to 13, low-noise amplifiers 21 to 23, switches 51A and 52 to 57, circulators 61, 63, 66, and 67, transceiver filters 62 and 64, a diplexer 65A, antenna connection terminals 101 to 107, high-frequency input terminals 111 to 113, and high-frequency output terminals 121 to 123.

[0149] The antenna connection terminal 101 is connected to one end of the filter 651 and one end of the filter 652 in the high-frequency module 1A, and is also connected to one end of the filter 653. The antenna connection terminal 106 is an example of the eighth external connection terminal and is connected to the other end of the filter 653 in the high-frequency module 1A. The antenna connection terminal 107 is an example of the ninth external connection terminal and is connected to the circulators 66 and 67 via the switch 51A in the high-frequency module 1A.

[0150] The high-frequency input terminal 113 is a terminal for receiving a high-frequency transmission signal from the outside of the high-frequency module 1A. In the present embodiment, the high-frequency input terminal 113 is a terminal for receiving the transmission signals of communication frequency bands E and F included in the communication frequency band group Z from the RFIC 3.

[0151] The high-frequency output terminal 123 is a terminal for providing a high-frequency reception signal to the outside of the high-frequency module 1A. In the present embodiment, the high-frequency output terminal 123 is a terminal for providing reception signals of communication bands E and F included in the communication band group Z to the RFIC 3.

[0152] The power amplifier 13 can amplify the transmission signals of communication bands E and F received by the high-frequency input terminal 113. Here, the input of the power amplifier 13 is connected to the high-frequency input terminal 113, and the output of the power amplifier 13 is connected to the switch 56.

[0153] The low-noise amplifier 23 can amplify the reception signals of communication bands E and F. The reception signals of communication bands E and F amplified by the low-noise amplifier 23 are output to the high-frequency output terminal 123.

[0154] The diplexer 65A has three filters 651 to 653, each having three different passbands. In the diplexer 65A, the filters 651 to 653 are bundled and connected to one antenna connection terminal 101.

[0155] The filter 653 is an example of the seventh filter and has a passband including the communication band group Z. That is, the filter 653 allows signals of each communication band included in the communication band group Z to pass through. One end of the filter 653 is connected to the antenna connection terminal 101, and the other end of the filter 653 is connected to the antenna connection terminal 106.

[0156] The duplexer 66 is an example of the eighth filter and has a passband including the communication band E. The duplexer 66 transmits the transmission signal and reception signal of the communication band E in the FDD mode. The duplexer 66 includes a transmission filter 66T and a reception filter 66R.

[0157] The transmission filter 66T (E-Tx) has a passband including the uplink operating band of the communication band E. One end of the transmission filter 66T is connected to the antenna connection terminal 107 via the switch 51A. The other end of the transmission filter 66T is connected to the output of the power amplifier 13 via the switch 56.

[0158] The reception filter 66R (E-Rx) has a passband including the downlink operating band of the communication band E. One end of the reception filter 66R is connected to the antenna connection terminal 107 via the switch 51A. The other end of the reception filter 66R is connected to the input of the low-noise amplifier 23 via the switch 57.

[0159] The duplexer 67 is an example of the 9th filter and has a passband including the communication band F. The duplexer 67 transmits the transmission signal and the reception signal of the communication band F in the FDD mode. The duplexer 67 includes a transmission filter 67T and a reception filter 67R.

[0160] The transmission filter 67T (F-Tx) has a passband including the uplink operating band of the communication band F. One end of the transmission filter 67T is connected to the antenna connection terminal 107 via the switch 51A. The other end of the transmission filter 67T is connected to the output of the power amplifier 13 via the switch 56.

[0161] The reception filter 67R (F-Rx) has a passband including the downlink operating band of the communication band F. One end of the reception filter 67R is connected to the antenna connection terminal 107 via the switch 51A. The other end of the reception filter 67R is connected to the input of the low-noise amplifier 23 via the switch 57.

[0162] The switch 5lA is connected to the duplexers 61, 63, 66, and 67 and the transceiver filters 62 and 64. The switch 51A has terminals 511 to 519. The terminal 517 is connected to the antenna connection terminal 107. The terminals 518 and 519 are connected to the duplexers 66 and 67, respectively.

[0163] In this connection structure, the switch 51A can connect the terminal 511 to either of the terminals 513 and 514, for example, based on a control signal from the RFIC3. That is, the switch 51A can connect the antenna connection terminal 104 to either the duplexer 61 or the transceiver filter 62. Further, the switch 51A can connect the terminal 512 to either of the terminals 515 and 516, for example, based on a control signal from the RFIC3. That is, the switch 51A can connect the antenna connection terminal 105 to either the duplexer 63 or the transceiver filter 64. Further, the switch 51A can connect the terminal 517 to either of the terminals 518 and 519. That is, the switch 51A can connect the antenna connection terminal 107 to either the duplexer 66 or 67. The switch 51A is composed of, for example, three SPDT-type switch circuits and is sometimes referred to as an antenna switch.

[0164] The switch 56 is connected between the transmission filters 66T and 67T and the power amplifier 13. The switch 56 has terminals 561 to 563. The terminal 561 is connected to the output of the power amplifier 13. The terminals 562 and 563 are connected to the transmission filters 66T and 67T, respectively.

[0165] In this connection structure, the switch 56 can connect the terminal 561 to either of the terminals 562 and 563, for example, based on a control signal from the RFIC3. That is, the switch 56 can connect the output of the power amplifier 13 to either of the transmit filters 66T and 67T. The switch 56 is constituted by, for example, an SPDT-type switch circuit.

[0166] The switch 57 is connected between the receive filters 66R and 67R and the low noise amplifier 23. The switch 57 has terminals 571 to 573. The terminal 571 is connected to the input of the low noise amplifier 23. The terminals 572 and 573 are connected to the receive filters 66R and 67R, respectively.

[0167] In this connection structure, the switch 57 can connect the terminal 571 to either of the terminals 572 and 573, for example, based on a control signal from the RFIC3. That is, the switch 57 can connect the input of the low noise amplifier 23 to either of the receive filters 66R and 67R. The switch 57 is constituted by, for example, an SPDT-type switch circuit.

[0168] The communication frequency band group Z is an example of the third communication frequency band group. As the communication frequency band group Z, for example, a low frequency band group can be used, but it is not limited thereto.

[0169] The communication frequency band E is an example of the fifth communication frequency band and is included in the communication frequency band group Z. In the present embodiment, as the communication frequency band E, a communication frequency band for FDD is used. More specifically, as the communication frequency band E, at least one of Band8, Band18, Band19, Band26, and Band28 for LTE and n8, n18, n19, n26, and n28 for 5GNR can be used, but the communication frequency band E is not limited to these.

[0170] The communication frequency band F is an example of the sixth communication frequency band, is included in the communication frequency band group Z but is different from the communication frequency band E. In the present embodiment, as the communication frequency band F, a communication frequency band that is a communication frequency band for FDD and is different from the communication frequency band E is used. More specifically, as the communication frequency band F, at least one of Band8, Band18, Band19, Band26, and Band28 for LTE and n8, n18, n19, n26, and n28 for 5GNR can be used, but the communication frequency band F is not limited to these.

[0171] In addition, the concept of the component configuration of the high-frequency module 1A according to the present embodiment is the same as that of the above-described Embodiment 1, and thus the illustration thereof is omitted. Even in the present embodiment, similar to the above-described Embodiment 1, the antenna connection terminals 102 and 104 are arranged adjacent to each other, and the antenna connection terminals 103 and 105 are arranged adjacent to each other. In addition, in the present embodiment, the antenna connection terminals 106 and 107 are also arranged adjacent to each other.

[0172] [2.2 Effects, etc.]

[0173] As described above, the high-frequency module 1A according to the present embodiment includes: a filter 651 having a passband including the communication frequency band group X; a filter 652 having a passband including a communication frequency band group Y different from the communication frequency band group X; a duplexer 61 having a passband including a communication frequency band A included in the communication frequency band group X; a transceiver filter 62 having a passband including a communication frequency band B different from the communication frequency band A, the communication frequency band B being included in the communication frequency band group X; a duplexer 63 having a passband including a communication frequency band C included in the communication frequency band group Y; a transceiver filter 64 having a passband including a communication frequency band D different from the communication frequency band C, the communication frequency band D being included in the communication frequency band group Y; a switch 51A connected to the duplexer 61, the transceiver filter 62, the duplexer 63, and the transceiver filter 64; a plurality of external connection terminals 150; and a module substrate 91 on which the filter 651, the filter 652, the duplexer 61, the transceiver filter 62, the duplexer 63, the transceiver filter 64, the switch 51A, and the plurality of external connection terminals 150 are arranged. The plurality of external connection terminals 150 include: an antenna connection terminal 101 connected to one end of the filter 651 and one end of the filter 652; an antenna connection terminal 102 connected to the other end of the filter 651; an antenna connection terminal 103 connected to the other end of the filter 652; an antenna connection terminal 104 connected to the duplexer 61 and the transceiver filter 62 via the switch 51A; and an antenna connection terminal 105 connected to the duplexer 63 and the transceiver filter 64 via the switch 51A. The high-frequency module 1A further includes: a filter 653 having a passband including a communication frequency band group Z different from the communication frequency band group X and the communication frequency band group Y; a duplexer 66 having a passband including a communication frequency band E included in the communication frequency band group Z; and a duplexer 67 having a passband including a communication frequency band F different from the communication frequency band E, the communication frequency band F being included in the communication frequency band group Z. The switch 51A is also connected to the duplexer 66 and the duplexer 67. The antenna connection terminal 101 is also connected to one end of the filter 653. The plurality of external connection terminals 150 further include an antenna connection terminal 106 connected to the other end of the filter 653, and an antenna connection terminal 107 connected to the duplexer 66 and the duplexer 67 via the switch 51A.

[0174] Thus, by using antenna connection terminals 101 to 107, high frequency module 1A can be used both when connection to one antenna is required and when connection to three antennas is required. Therefore, high frequency module products can be made common in two communication devices having different requirements.

[0175] For another example, in the high-frequency module 1A according to the present embodiment, the communication band group Z may have a frequency range of 698 MHz or more and less than 960 MHz.

[0176] Thus, the high-frequency module 1A can be used for communications in a so-called low-band group.

[0177] (Other embodiments)

[0178] The high frequency module and the communication device according to the present invention have been described above based on the embodiments, but the high frequency module and the communication device according to the present invention are not limited to the above embodiments. Other embodiments implemented by combining any of the constituent elements in the above embodiments, modified examples obtained by implementing various modifications that can be conceived by those skilled in the art to the above embodiments within the scope of the present invention, and various devices in which the above high frequency module and the communication device are built-in are also included in the present invention.

[0179] For example, in the circuit structures of the high-frequency modules and communication devices involved in the above-mentioned embodiments, other circuit elements and wirings may be inserted between the paths connecting the circuit elements and the signal paths disclosed in the drawings. For example, an impedance matching circuit may be inserted between two circuit elements. The impedance matching circuit may include, for example, an inductor and / or a capacitor.

[0180] In addition, in each of the above-mentioned embodiments, two switches 52 and 53 are used for the connection and disconnection between the bidirectional device 61 and the transceiver filter 62 and the power amplifier 11 and the low noise amplifier 21, but the structure of the switch is not limited to this. For example, switches 52 and 53 can also be composed of a single switch circuit. In this case, the single switch circuit only needs to have 5 terminals connected to the output of the transmission filter 61T, the reception filter 61R, the transceiver filter 62, the power amplifier 11, and the output of the low noise amplifier 21. In addition, switches 54 and 55 can also be composed of a single switch circuit like switches 52 and 53.

[0181] In addition, in each of the above-described embodiments, the high-frequency modules 1 and 1A include the switch 53 for switching the filter connected to the low-noise amplifier 21, but the switch 53 may not be provided. In this case, the high-frequency modules 1 and 1A may include two low-noise amplifiers instead of the low-noise amplifier 21. At this time, it may also be that the other end of the receive filter 61R is connected to one of the two low-noise amplifiers, and the other end of the transceiver filter 62 is connected to the other of the two low-noise amplifiers via the switch 52.

[0182] Similarly, the high-frequency modules 1 and 1A may not include the switch 55. In this case, the high-frequency module 1 may include two low-noise amplifiers instead of the low-noise amplifier 22. At this time, it may also be that the other end of the receive filter 63R is connected to one of the two low-noise amplifiers, and the other end of the transceiver filter 64 is connected to the other of the two low-noise amplifiers via the switch 54.

[0183] In addition, the configuration of the components in the above-described Embodiment 1 is an example and is not limited thereto. For example, in the above-described Embodiment 1, the semiconductor integrated circuit 20 and / or the switch 51 may also be disposed on the main surface 91b. That is, it may also be that the module substrate 91 has the main surfaces 91a and 91b facing each other, the duplexer 61, the transceiver filter 62, the duplexer 63, the transceiver filter 64, and the power amplifiers 11 and 12 are disposed on the main surface 91a, and the switches 51, 53, and 55, the low-noise amplifiers 21 and 22, and the plurality of external connection terminals 150 are disposed on the main surface 91b. In this case, as the plurality of external connection terminals 150, column electrodes and / or bump electrodes may also be used. Thus, components can be disposed on both sides of the module substrate 91, and therefore miniaturization of the high-frequency module 1 can be achieved. At this time, the switches 52 and 54 may be disposed on either the main surface 91a or the main surface 91b.

[0184] In addition, in the above-described embodiments, the duplexer 65 or the triplexer 65A is used, but it is not limited thereto. For example, a multiplexer having four or more filters may be used instead of the duplexer 65 or the triplexer 65A.

[0185] In addition, in each of the above-described embodiments, the high-frequency module includes both a transmission path and a reception path, but it may also include only one of the transmission path and the reception path.

[0186] Industrial Applicability

[0187] The present invention can be widely used in communication devices such as mobile phones as a high-frequency module disposed at the front end.

[0188] Description of Reference Numerals

[0189] 1, 1A High-frequency modules;

[0190] 2, 2A, 2B antennas;

[0191] 3 RFICs;

[0192] 4 BBICs;

[0193] 5A, 5B communication devices;

[0194] 11, 12, 13 power amplifiers;

[0195] 20 semiconductor integrated circuits;

[0196] 21, 22, 23 low-noise amplifiers;

[0197] 51, 5lA, 52, 53, 54, 55, 56, 57 switches;

[0198] 61, 63, 66, 67 circulators;

[0199] 61R, 63R, 66R, 67R receive filters;

[0200] 61T, 63T, 66T, 67T transmit filters;

[0201] 62, 64 transceiver filters;

[0202] 65 diplexer;

[0203] 65A triplexer;

[0204] 91 module substrate;

[0205] 91a, 91b main surfaces;

[0206] 92 resin member;

[0207] 95 shielding electrode layer;

[0208] 101, 102, 103, 104, 105, 106, 107 antenna connection terminals;

[0209] 111, 112, 113 high-frequency input terminals;

[0210] 121, 122, 123 high-frequency output terminals;

[0211] 150 external connection terminal;

[0212] Terminals 511, 512, 513, 514, 515, 516, 517, 518, 519, 521, 522, 523, 524, 531, 532, 533, 541, 542, 543, 544, 551, 552, 553, 561, 562, 563, 571, 572, 573;

[0213] Filters 651, 652, 653;

[0214] Distances d1, d2, d11, d12, d13, d14, d21, d22, d23, d24.

Claims

1. A high-frequency module, comprising: A first filter having a passband including a first communication frequency band group; A second filter having a passband including a second communication frequency band group different from the first communication frequency band group; A third filter having a passband including a first communication frequency band included in the first communication frequency band group; A fourth filter having a passband including a second communication frequency band different from the first communication frequency band and included in the first communication frequency band group; A fifth filter having a passband including a third communication frequency band included in the second communication frequency band group; A sixth filter having a passband including a fourth communication frequency band different from the third communication frequency band and included in the second communication frequency band group; A switch connected to the third filter, the fourth filter, the fifth filter, and the sixth filter; A plurality of external connection terminals; and A module substrate on which the first filter, the second filter, the third filter, the fourth filter, the fifth filter, the sixth filter, the switch, and the plurality of external connection terminals are disposed, The plurality of external connection terminals include: A first external connection terminal connected to one end of the first filter and one end of the second filter; A second external connection terminal connected to the other end of the first filter; A third external connection terminal connected to the other end of the second filter; A fourth external connection terminal connected to the third filter and the fourth filter via the switch; and A fifth external connection terminal connected to the fifth filter and the sixth filter via the switch.

2. The high-frequency module according to claim 1, wherein The second external connection terminal and the fourth external connection terminal are disposed adjacent to each other on the same main surface of the module substrate, The third external connection terminal and the fifth external connection terminal are disposed adjacent to each other on the same main surface of the module substrate.

3. The high-frequency module according to claim 1 or 2, wherein The plurality of external connection terminals further include: a ground terminal set to a ground potential and disposed between the second external connection terminal and the third external connection terminal.

4. The high-frequency module according to claim 1 or 2, wherein The plurality of external connection terminals further include: a ground terminal set to a ground potential and disposed between the fourth external connection terminal and the fifth external connection terminal.

5. The high-frequency module according to claim 1 or 2, wherein The plurality of external connection terminals further include: a ground terminal set to a ground potential and disposed between the first external connection terminal and the second external connection terminal.

6. The high-frequency module according to claim 1 or 2, wherein The plurality of external connection terminals further include: a ground terminal set to a ground potential and disposed between the first external connection terminal and the third external connection terminal.

7. The high-frequency module according to claim 1 or 2, wherein The plurality of external connection terminals further includes: a sixth external connection terminal for supplying a high-frequency reception signal to the outside, The distance between the first external connection terminal and the second external connection terminal is shorter than the distance between the second external connection terminal and the sixth external connection terminal, The distance between the first external connection terminal and the third external connection terminal is shorter than the distance between the third external connection terminal and the sixth external connection terminal.

8. The high-frequency module according to claim 1 or 2, wherein, The plurality of external connection terminals further includes: a seventh external connection terminal for receiving a high-frequency transmission signal from the outside, The distance between the first external connection terminal and the second external connection terminal is shorter than the distance between the second external connection terminal and the seventh external connection terminal, The distance between the first external connection terminal and the third external connection terminal is shorter than the distance between the third external connection terminal and the seventh external connection terminal.

9. The high-frequency module according to claim 1 or 2, wherein, The high-frequency module further includes: A seventh filter having a passband including a third communication frequency band group different from the first communication frequency band group and the second communication frequency band group; An eighth filter having a passband including a fifth communication frequency band, and the fifth communication frequency band is included in the third communication frequency band group; And A ninth filter having a passband including a sixth communication frequency band different from the fifth communication frequency band, and the sixth communication frequency band is included in the third communication frequency band group, The switch is also connected to the eighth filter and the ninth filter, The first external connection terminal is also connected to one end of the seventh filter, The plurality of external connection terminals further includes: An eighth external connection terminal connected to the other end of the seventh filter; and A ninth external connection terminal connected to the eighth filter and the ninth filter via the switch.

10. The high-frequency module according to claim 9, wherein, The eighth external connection terminal and the ninth external connection terminal are arranged adjacent to each other on the same main surface of the module substrate.

11. The high-frequency module according to claim 1 or 2, wherein, The first communication frequency band group has a frequency range of 2300 MHz or more and less than 2690 MHz.

12. The high-frequency module according to claim 11, wherein, The first communication frequency band includes at least one of Band7 for LTE and n7 for 5G NR.

13. The high-frequency module according to claim 11, wherein, The second communication frequency band includes at least one of Band41 and Band40 for LTE and n41 and n40 for 5G NR.

14. The high-frequency module according to claim 1 or 2, wherein, The second communication frequency band group has a frequency range of 1427 MHz or more and less than 2200 MHz.

15. The high-frequency module according to claim 14, wherein, The 3rd communication frequency band includes at least one of Band1, Band25, Band3, and Band66 for LTE, and n1, n25, n3, and n66 for 5G NR.

16. The high-frequency module according to claim 14, wherein The 4th communication frequency band includes at least one of Band34 and Band39 for LTE, and n34 and n39 for 5G NR.

17. The high-frequency module according to claim 9, wherein The 3rd communication frequency band group has a frequency range of more than 698 MHz and less than 960 MHz.

18. A communication device comprising: A signal processing circuit that processes high-frequency signals; and The high-frequency module according to any one of claims 1 to 17, which transmits the high-frequency signal between the signal processing circuit and at least one antenna.

19. The communication device according to claim 18, wherein The 1st external connection terminal is connected to the at least one antenna, The 2nd external connection terminal is short-circuited with the 4th external connection terminal, The 3rd external connection terminal is short-circuited with the 5th external connection terminal.

20. The communication device according to claim 18, wherein The at least one antenna includes a 1st antenna and a 2nd antenna, The 4th external connection terminal is connected to the 1st antenna, The 5th external connection terminal is connected to the 2nd antenna.

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