Support unit and apparatus for processing a substrate

Abstract

The present invention relates to a support unit and an apparatus for processing a substrate. In particular, a support unit for supporting a substrate is provided. The support unit can comprise a plate, a heating element arranged to the plate and to control a temperature of the substrate, wherein the heating element is arranged to control a temperature of different areas of the substrate, and a power supply module to supply power to the heating element, which power supply module can be configured to continuously supply power to at least two of the heating elements.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0113963, filed with the Korean Intellectual Property Office on August 27, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to a support unit and an apparatus for processing a substrate, and more particularly, to a support unit capable of controlling the temperature of a supported substrate and a substrate processing apparatus including the support unit. Background Technology

[0004] Plasma is generated by very high temperatures, strong electric fields, or radio frequency (RF) electromagnetic fields, and refers to an ionized gaseous state composed of ions, electrons, and radicals. In semiconductor device manufacturing processes, plasma is used to perform various processes. For example, semiconductor device manufacturing processes may include etching processes that remove thin films from a substrate using plasma, or deposition processes that deposit films on a substrate using plasma.

[0005] Therefore, a plasma substrate processing apparatus that processes substrates (such as wafers) using plasma needs to allow for precise execution of substrate processing, repeatability that allows for a constant degree of processing between substrates even when processing multiple substrates, and uniformity that allows for a uniform degree of processing across the entire area of ​​a single substrate.

[0006] Meanwhile, with the development of semiconductor device manufacturing technology, the diameter of the substrates being processed tends to increase, and the critical dimension (CD) of the patterns formed on the substrates tends to decrease. The increasing size of the substrates and the miniaturization of the patterns make it difficult to ensure the uniformity of substrate processing. Summary of the Invention

[0007] The present invention aims to provide a support unit capable of effectively processing a substrate and an apparatus for processing a substrate.

[0008] Furthermore, the present invention aims to provide a support unit and a substrate processing apparatus that can improve the uniformity of substrate processing.

[0009] Furthermore, the present invention aims to provide a support unit configured to continuously operate two or more heating elements and an apparatus for processing a substrate.

[0010] Further, an effort has been made to provide a support unit and a substrate processing apparatus capable of independently heating a substrate according to the area of the substrate without a complicated connection structure.

[0011] Effects of the present application are not limited to the above-mentioned effects, and other effects not mentioned above will become apparent to those skilled in the art from the following disclosure.

[0012] An exemplary embodiment of the present application provides a support unit supporting a substrate. The support unit can include a plate, a heating element disposed to the plate and controlling a temperature of the substrate, wherein the heating element is arranged to control the temperature of different areas of the substrate, and a power supply module supplying power to the heating element, the power supply module can be configured to continuously supply power to at least two of the heating elements.

[0013] According to an exemplary embodiment, the power supply module can include a power source generating power, a power supply line connected to a power supply stage of the heating element, and a power return line connected to a power return stage of the heating element.

[0014] According to an exemplary embodiment, a plurality of power supply lines and power return lines can be provided, each of the heating elements can be connected to any one of the power supply lines and any one of the power return lines, and the heating elements can not share the same power supply line and power return line.

[0015] According to an exemplary embodiment, the power supply module can include a supply switch installed in the power supply line and a return switch installed in the power return line.

[0016] According to an exemplary embodiment, a plurality of supply switches and return switches can be provided, the supply switches can be respectively installed in the power supply lines, and the return switches can be respectively installed in the power return lines.

[0017] According to an exemplary embodiment, the power supply module can include a first input unit receiving a control signal for controlling the supply switch from a controller, and a second input unit receiving a control signal for controlling the return switch from the controller.

[0018] According to an exemplary embodiment, the power supply module can include a determination unit receiving the control signal received by the second input unit, and outputting an On signal again when the received signal includes at least two On signals.

[0019] According to an exemplary embodiment, the power supply module can include a gate unit receiving the signal output by the determination unit and the signal input to the first input unit.

[0020] According to an exemplary embodiment, the gate unit can include an AND gate corresponding to each of the supply switches, and the AND gate can receive a signal input to the first input unit and an output signal output by the determination unit.

[0021] According to an exemplary embodiment, the rectifier can be installed at a rear section of the heating element.

[0022] Further, another exemplary embodiment of the present application provides an apparatus for processing a substrate. The apparatus for processing a substrate can include a chamber providing a processing space in which a substrate is processed, and a support unit for supporting and heating the substrate in the processing space, and the support unit can include a plate, a heating element provided to the plate and heating the substrate, wherein the heating element is arranged to control the temperature of different regions of the substrate, and a power supply module supplying power to the heating element, and the power supply module can be configured to continuously supply power to at least two of the heating elements.

[0023] According to an exemplary embodiment, the power supply module can include a power source generating power applied to the heating element, a power supply line connected to a power supply section of the heating element, and a power return line connected to a power return section of the heating element.

[0024] According to an exemplary embodiment, each of the heating elements can be connected to any one of the power supply line and any one of the power return line, and the heating elements can not share the same power supply line and power return line.

[0025] According to an exemplary embodiment, the power supply module can include supply switches installed in the power supply line, respectively, and return switches installed in the power return line, respectively.

[0026] According to an exemplary embodiment, the apparatus can further include a controller controlling the power supply module, and the power supply module can include a first input unit receiving a control signal for controlling the supply switches from the controller, and a second input unit receiving a control signal for the return switches from the controller.

[0027] According to an exemplary embodiment, the controller can transmit the same control signal to the first input unit and the second input unit.

[0028] According to an exemplary embodiment, the power supply module can include a determination unit receiving the control signal received by the second input unit, and outputting an on signal again when the received signal includes at least two on signals, and a gate unit receiving a signal output by the determination unit and a signal input by the first input unit.

[0029] According to an exemplary embodiment, the gate unit can include "AND" gates corresponding to the supply switches, respectively, and the "AND" gates can receive the signal input to the first input unit and the output signal output by the determination unit.

[0030] Further, another exemplary embodiment of the present application provides an apparatus for processing a substrate. The apparatus for processing a substrate can include a chamber provided with a processing space in which a substrate is processed, a support unit supporting the substrate in the processing space, a plasma source generating plasma for processing the substrate in the processing space, and a controller, and the support unit can include a plate, a heating element provided to the plate and heating the substrate, wherein the heating element is arranged to control the temperature of different regions of the substrate, and a power supply module supplying power to the heating element, and the power supply module can be configured to continuously supply power to at least two of the heating elements.

[0031] According to an exemplary embodiment, the power supply module can include a power source generating power applied to the heating element, a power supply line connected to a power supply segment of the heating element, a power return line connected to a power return segment of the heating element, a supply switch installed in the power supply line, respectively, a return switch installed in the power return line, respectively, a first input unit receiving a control signal for controlling the supply switch from the controller, a second input unit receiving a control signal for controlling the return switch from the controller, a determination unit receiving the control signal received by the second input unit and outputting an on signal again when the received signal includes at least two on signals, and a gate unit receiving the signal output by the determination unit and the signal input by the first input unit, each of the heating elements can be connected to any one of the power supply line and any one of the power return line, and the heating elements can not share the same power supply line and power return line.

[0032] According to an exemplary embodiment of the present application, a substrate can be effectively processed.

[0033] Further, according to an exemplary embodiment of the present application, the process uniformity for a substrate can be improved.

[0034] Further, an object of the present application is to provide a support unit and an apparatus for processing a substrate configured for two or more heating elements to continuously operate.

[0035] Further, according to an exemplary embodiment of the present application, a substrate can be independently heated according to the area of the substrate even without a complicated connection structure being provided.

[0036] The effects of the present invention are not limited to those described above, and those skilled in the art will clearly understand from this specification and the accompanying drawings the effects not mentioned. Attached Figure Description

[0037] Figure 1 A diagram illustrating an apparatus for processing a substrate according to an exemplary embodiment of the present invention is provided.

[0038] Figure 2 for Figure 1 An enlarged view of part of the support unit.

[0039] Figure 3 The diagram illustrates, schematically, the circuit structure of a heating element comprising a power line module, a power supply module, and a support unit according to a first exemplary embodiment of the present invention.

[0040] Figure 4 To show Figure 3 A diagram of the logic of the defined unit.

[0041] Figure 5 To apply a control signal for operating a heating element to Figure 3 The diagram shows the state of the circuit structure.

[0042] Figure 6 To apply control signals for operating the two heating elements to Figure 3 The diagram shows the state of the circuit structure.

[0043] Figure 7 This is a diagram showing a planar view of a support unit as viewed from top according to a second exemplary embodiment of the present invention.

[0044] Figure 8 This is a diagram showing the first plane of the support unit as viewed from top according to a third exemplary embodiment of the present invention.

[0045] Figure 9 To show the view from the top Figure 8 A diagram of the second plane of the support unit.

[0046] Figure 10 for Figure 8 Cross-sectional view of the support unit.

[0047] Figure 11 This is a diagram showing the first plane of the support unit as viewed from top according to a fourth exemplary embodiment of the present invention.

[0048] Figure 12 To show the view from the top, Figure 11 The diagram of the second plane.

[0049] Figure 13 This is a diagram showing the first plane of the support unit as viewed from top according to a fifth exemplary embodiment of the present invention.

[0050] Figure 14 For viewing from the top, Figure 13 A diagram of the second plane of the support unit.

[0051] Figure 15 For viewing from the top, Figure 13 A diagram of the third plane of the support unit.

[0052] Figure 16 for Figure 13 Cross-sectional view of the support unit.

[0053] Figure 17 A diagram illustrating the layout of the heating element of the support unit according to a sixth exemplary embodiment of the present invention is provided.

[0054] Figure 18 A diagram illustrating the layout of the heating element of the support unit according to a seventh exemplary embodiment of the present invention is provided. Detailed Implementation

[0055] In the following detailed description, certain exemplary embodiments of the invention are shown and described by way of illustration only. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit and scope of this disclosure. Furthermore, in describing exemplary embodiments of the invention, detailed descriptions of relevant known functions or configurations will be omitted if it is determined that such known functions or configurations unnecessarily obscure the gist of the invention. Furthermore, in all the drawings, the same reference numerals are used for parts performing similar functions and similar actions. In the following detailed description of the invention, certain exemplary embodiments of the invention are shown and described by way of illustration only. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of the invention. In the following description of the invention, detailed descriptions of known functions and configurations incorporated herein are omitted to avoid obscuring the subject matter of the invention. Furthermore, in all the drawings, the same reference numerals are used for parts performing similar functions and similar actions.

[0056] Unless explicitly stated otherwise, the term "comprising," and variations such as "includes" or "including," shall be understood to mean including the stated elements but not excluding any other elements. Specifically, the terms "comprising" or "having" should be understood to indicate the presence of the features, figures, steps, operations, components, parts, or combinations thereof described in the specification, but do not preclude the possibility of the presence or addition of one or more other features, figures, steps, operations, components, parts, or combinations thereof.

[0057] The singular form includes the plural form unless there is an obvious opposite meaning in the context. Furthermore, for clarity, the shape, size, etc., of elements in the accompanying drawings may be exaggerated.

[0058] Exemplary embodiments of the present invention can be modified in various forms and should not be construed as limiting the scope of the invention to the embodiments described below. Exemplary embodiments are provided to describe the invention more fully to those skilled in the art. Therefore, the shapes of elements in the drawings may be exaggerated for clearer emphasis.

[0059] In an exemplary embodiment of the present invention, a substrate processing apparatus using plasma etching of a substrate will be described. However, the present invention is not limited thereto and can be applied to various types of apparatuses that perform processing by supplying plasma in a chamber.

[0060] In the following text, reference will be made to Figures 1 to 18 Exemplary embodiments of the present invention are described below.

[0061] (First exemplary implementation)

[0062] Figure 1 A diagram illustrating an apparatus for processing a substrate according to an exemplary embodiment of the present invention is provided.

[0063] Reference Figure 1 The substrate processing apparatus 10 processes the substrate W using plasma. The substrate processing apparatus 10 may include a chamber 100, a support unit 200, a nozzle unit 300, a gas supply unit 400, a plasma source, a pad unit 500, a baffle 600, and a controller 800.

[0064] The chamber 100 is provided with a processing space in which a substrate processing process is performed. The chamber 100 has a processing space therein. The chamber 100 is provided in a sealed shape. The chamber 100 is provided as a metal material. As an example, the chamber 100 can be provided as an aluminum material. The chamber 100 can be grounded. A discharge hole 102 is formed in a bottom surface of the chamber 100. The discharge hole 102 is connected with a discharge line 151. The discharge line 151 is connected with a pump (not shown). Reaction byproducts generated in a process and gas left in an inner space of the chamber 100 can be discharged to the outside through the discharge line 151. The inner side in the chamber 100 is depressurized at a predetermined pressure by a discharge process.

[0065] A heater (not shown) is provided to a wall of the chamber 100. The heater heats the wall of the chamber 100. The heater is electrically connected to a heating power source (not shown). The heater generates heat against an electric current applied by the heating power source. The heat generated in the heater is transferred to the inner space. The processing space is maintained at a predetermined temperature by the heat generated in the heater. The heater is provided as a hot wire having a coil shape. A plurality of heaters can be provided in the wall of the chamber 100.

[0066] The support unit 200 can support a substrate W in the processing space of the chamber 100. The support unit 200 can be an electrostatic chuck (ESC) that adsorbs a substrate W such as a wafer by an electrostatic scheme. Unlike this, the support unit 200 can also clamp a substrate W by various schemes such as mechanical clamping or clamping by vacuum adsorption.

[0067] In addition, the support unit 200 can control the temperature of the supported substrate W. For example, the support unit 200 increases the temperature of the substrate W to improve the processing efficiency of the substrate W. The support unit 200 can heat the substrate W.

[0068] The support unit 200 can include a support plate 210 (an example of a first plate), an electrode plate 220 (an example of a second plate), a heater 230, a lower support 240, an insulating plate 250, a lower plate 260, a ring member 270, a power line module 280, and a power source module 290.

[0069] The substrate W can be placed on the support plate 210. When viewed from the top, the support plate 210 can have a disc shape.

[0070] The upper surface of the support plate 210 can have the same radius as the substrate W. Further, the upper surface of the support plate 210 can have a larger radius than the substrate W. When the substrate W is placed on the support plate 210, the peripheral region of the substrate W can not protrude to the outside of the support plate 210. Further, the peripheral region of the support plate 210 can be stepped. The insulator 214 can be disposed in the stepped peripheral region of the support plate 210. The support plate 210 can have a ring shape when viewed from the top.

[0071] Figure 2 An enlarged view of a portion of the support unit. Figure 1

[0072] Referring to Figure 2 , the support plate 210 can include a dielectric layer 210a, a first insulating layer 210b, a second insulating layer 210c, and a heat insulating layer 210d.

[0073] The electrostatic electrode 211 can be disposed in the dielectric layer 210a. For example, the electrostatic electrode 211 can be embedded in the dielectric layer 210a. The electrostatic electrode 211 can be disposed in a monopolar type or a bipolar type. The electrostatic electrode 211 can be electrically connected to an electrostatic power source 213. The electrostatic power source 213 can be a direct current (DC) power source. A chucking switch 212 can be installed between the electrostatic electrode 211 and the electrostatic power source 213. The electrostatic electrode 211 can be electrically connected to the electrostatic power source 213 by the opening / closing of the chucking switch 212. When the switch 212 is opened, a direct current can be applied to the electrostatic electrode 211. The current applied to the electrostatic electrode 211 can generate an electrostatic force between the electrostatic electrode 211 and the substrate W. The substrate W can be chucked to the support plate 210 by the electrostatic force. The dielectric layer 210a can be disposed with a material containing a dielectric. For example, the dielectric layer 210a can be disposed with a material containing ceramic.

[0074] The first insulating layer 210b and the second insulating layer 210c are combined with each other to form a cavity. There can be a plurality of cavities formed by the first insulating layer 210b and the second insulating layer 210c. The first insulating layer 210b can be disposed below the dielectric layer 210a. The second insulating layer 210c can be disposed below the first insulating layer 210b. An upwardly recessed groove can be formed in the first insulating layer 210b, and the second insulating layer 210c is disposed below the first insulating layer 210b to form a cavity. A heating element 230 can be disposed in each cavity formed by the first insulating layer 210b and the second insulating layer 210c. In Figure 2 ​In the embodiment, the recess is formed in the first insulating layer 210b as an example, but the present application is not limited thereto, and a case where the recess is formed in the second insulating layer 210c can also be considered. The first insulating layer 210b and the second insulating layer 210c can be a high molecular material, an inorganic material, a ceramic (i.e., silicon oxide, aluminum oxide, yttrium, aluminum nitride), and other suitable materials, and combinations thereof.

[0075] The thermal insulation layer 210d can be disposed below the second insulating layer 210c. The thermal insulation layer 210d can function as a thermal barrier. For example, heat generated by the heating element 230, which is transferred to the lower portion of the support unit 200, can be minimized. Further, cooling air of the cooling fluid flowing in the upper path 221, which is a cooling path to be described below, which is delivered to the insulating layers 210b and 210c in which the heating element 230 is disposed, can be minimized.

[0076] The heating element 230 can control the temperature of the substrate W. The heating element 230 can heat the substrate W. The heating element 230 can generate heat by receiving power through the power line module 280, which is generated by the power supply module 290 to be described below. The heating element 230 can be disposed in a cavity formed by the first insulating layer 210b and the second insulating layer 210c. A plurality of heating elements 230 can be disposed. For example, the heating elements 230 can heat different regions of the substrate W, respectively. For example, any one of the heating elements 230 can heat a first region of the substrate W. Further, another of the heating elements 230 can heat a second region of the substrate W.

[0077] The heating element 230 can be arranged to control the temperature of each region of the substrate W. Further, the heating element 230 can have a plate shape. For example, the heating element 230 can also be referred to as a heating plate. Each of the heating elements 230 can have various shapes such as a rectangular shape, a pentagonal shape, etc. Further, the heating element 230 can be a resistance heater (i.e., a polyimide heater), a silicone rubber heater, a mica heater, a metal heater, a ceramic heater, a semiconductor heater, or a carbon heater.

[0078] Further, the area of the heating element 230 can be greater than or correspond to the area of a die manufactured on the substrate W. For example, the area of each of the heating elements 230 can be 2 cm 2 to 3 cm 2Further, the thickness of each of the heating elements 230 can be 2 micrometers to 1 millimeter, more specifically, also in a range of 5 micrometers to 80 micrometers. In addition, the total area occupied by the heating elements 230 when viewed from the top can be 50% to 90% of the area of the upper surface of the support unit 200 (for example, the upper surface of the support plate 210). For example, the total area occupied by the heating elements 230 when viewed from the top can be 90% of the upper surface of the support plate 210.

[0079] The electrode plate 220 can be disposed below the support plate 210. The upper surface of the electrode plate 220 can be in contact with the lower surface of the support plate 210. The electrode plate 220 can be disposed in a disc shape. The electrode plate 220 is provided with an electrically conductive material. As an example, the electrode plate 220 can be provided with an aluminum material. An upper path 221, which is a passage in which a cooling fluid flows, can be formed inside the electrode plate 220. The upper path 221 mainly cools the support plate 210. The cooling fluid can be supplied to the upper path 221. As an example, the cooling fluid can be provided as cooling water or cooling gas. Further, the electrode plate 220 can also be a cooling plate. Further, in the above example, the upper path 221, which is a cooling path in which a cooling fluid flows, is formed in the electrode plate 220, but the cooling plate can be provided separately from the electrode plate 220. For example, the cooling plate is disposed above or below the electrode plate 220, but a path in which a cooling fluid flows is formed in the cooling plate, and the upper path 221 can not be formed in the electrode plate 220.

[0080] Returning to Figure 1 The electrode plate 220 can be provided as a metal plate. The electrode plate 220 can be electrically connected to a lower power source 227. The lower power source 227 can be provided as a high-frequency power source for generating high-frequency power. The high-frequency power source can be provided as an RF power source. The RF power source can be provided as a high-bias power RF power source. The electrode plate 220 can selectively receive high-frequency power by switching the lower switch 225 from the lower power source 227. Unlike this, the electrode plate 220 can be grounded and provided.

[0081] An insulating plate 250 can be disposed below the electrode plate 220. The plate 250 can be provided in a disc shape. The insulating plate 250 can be provided in an area corresponding to the electrode plate 220. The insulating plate 250 can be provided as an insulating plate. As an example, the plate 250 can be provided as a dielectric.

[0082] A lower support 240 is disposed below the electrode plate 220. The lower support 240 is disposed below the lower plate 260. The lower support 240 is provided in a ring shape.

[0083] A lower plate 260 is positioned below the insulating plate 250. The lower plate 260 can be provided as an aluminum material. When viewed from the top, the lower plate 260 can be provided in a circular shape. The lower plate 260 can have an inner space. In the inner space of the lower plate 260, a lift pin module (not shown) that moves the substrate W from the external transport member to the support plate 210 can be positioned.

[0084] A ring-shaped member 270 is provided at a peripheral area of the support unit 200. The ring-shaped member 270 has a ring shape. The ring-shaped member 270 is provided to surround an upper portion of the support plate 210. The ring-shaped member 270 can be provided above an insulator 214 provided at a peripheral area of the support plate 210. The ring-shaped member 270 can be provided as a focus ring.

[0085] A showerhead unit 300 is positioned above the support unit 200 within the chamber 100. The showerhead unit 300 is positioned opposite the support unit 200. The showerhead unit 300 includes a showerhead 310, a gas injection plate 320, a cover plate 330, an upper plate 340, and an insulating ring 350.

[0086] The showerhead 310 is located at a predetermined distance downward from an upper surface of the chamber 100. The showerhead 310 is provided above the support unit 200. A predetermined space is formed between the showerhead 310 and the upper surface of the chamber 100. The showerhead 310 can be provided in a plate shape having a constant thickness. A surface of a lower surface of the showerhead 310 can be polarized to prevent plasma from generating an arc. A cross-section of the showerhead 310 can be provided to have the same shape and cross-sectional area as the support unit 200. The showerhead 310 includes a plurality of spray holes 311. The spray holes 311 penetrate the upper surface and the lower surface of the showerhead 310 in a vertical direction.

[0087] The showerhead 310 can be provided with a material that reacts with plasma generated by the gas supplied by the gas supply unit 400 to generate a compound. For example, the showerhead 310 can be provided with a material that reacts with an ion having the greatest electronegativity among ions contained in the plasma to generate a compound. For example, the showerhead 310 can be provided with a silicon (Si)-containing material. Further, the compound generated by the reaction of the showerhead 310 and the plasma can be silicon tetrafluoride.

[0088] The showerhead 310 can be electrically connected to an upper power source 370. The upper power source 370 can be provided as a high-frequency power source. Unlike this, the showerhead 310 can also be electrically grounded.

[0089] A gas injection plate 320 can be disposed on an upper surface of the showerhead 310. The gas injection plate 320 can be positioned to be spaced apart from an upper surface of the chamber 100 by a predetermined distance. The gas injection plate 320 can be disposed in a plate shape having a constant thickness. A heater 323 is disposed at a peripheral area of the gas injection plate 320. The heater 323 heats the gas injection plate 320.

[0090] Diffusion regions 322 and injection holes 321 are disposed in the gas injection plate 320. The diffusion regions 322 uniformly spray gas supplied from the top to the injection holes 321. The diffusion regions 322 are connected to the injection holes 321 thereunder. The continuous diffusion regions 322 are connected to each other. The injection holes 321 are connected to the diffusion regions 322 to penetrate a lower surface in a vertical direction.

[0091] The injection holes 321 are located opposite to the injection holes 311 of the showerhead 310. The gas injection plate 320 can include a metallic material.

[0092] A cover plate 330 is located above the gas injection plate 320. The cover plate 330 can be disposed in a plate shape having a constant thickness. Diffusion regions 332 and injection holes 331 are disposed in the cover plate 330. The diffusion regions 332 uniformly spray gas supplied from the top to the injection holes 331. The diffusion regions 332 are connected to the injection holes 331 thereunder. The continuous diffusion regions 332 are connected to each other. The injection holes 331 are connected to the diffusion regions 332 to penetrate a lower surface in a vertical direction.

[0093] An upper plate 340 is located above the cover plate 330. The upper plate 340 can be disposed in a plate shape having a constant thickness. The upper plate 340 can be disposed to have the same size as the cover plate 330. The upper plate 340 has a supply hole 341 formed in a center thereof. The supply hole 341 is a hole through which gas passes. The gas passing through the supply hole 341 is supplied to the diffusion regions 332 of the cover plate 330. A cooling path 343 is formed inside the upper plate 340. A cooling fluid can be supplied to the cooling path 343. As an example, the cooling fluid can be provided as cooling water.

[0094] Further, the showerhead 310, the gas injection plate 320, the cover plate 330, and the upper plate 340 can be supported by a rod. For example, the showerhead 310, the gas injection plate 320, the cover plate 330, and the upper plate 340 can be coupled to each other and supported by a rod fixed to an upper surface of the upper plate 340. Further, the rod can be coupled to an inside of the chamber 100.

[0095] The insulation ring 350 is disposed to surround the periphery of the showerhead 310, the gas injection plate 320, the cover plate 330, and the upper plate 340. The insulation ring 350 can be disposed in a circular ring shape. The insulation ring 350 can be disposed of a non-metallic material. When viewed from the top, the insulation ring 350 is positioned to overlap the annular member 270. When viewed from the top, the surfaces of the insulation ring 350 and the showerhead that are in contact with each other are positioned to overlap the upper region of the annular member 270.

[0096] The gas supply unit 400 can supply gas into the chamber 100. The gas supplied by the gas supply unit 400 can be excited into a plasma state by the plasma source. Further, the gas supplied by the gas supply unit 400 can be a fluorine-containing gas. For example, the gas supplied by the gas supply unit 400 can be tetrafluoromethane.

[0097] The gas supply unit 400 can include a gas supply nozzle 410, a gas supply line 420, and a gas storage unit 430. The gas supply nozzle 410 is installed at the center of the upper surface of the chamber 100. A jet port is formed on the lower surface of the gas supply nozzle 410. The jet port can supply process gas into the chamber 100. The gas supply line 420 connects the gas supply nozzle 410 and the gas storage unit 430 to each other. The gas supply line 420 supplies process gas stored in the gas storage unit 430 to the gas supply nozzle 410. The gas supply line 420 can be provided with a valve 421. The valve 421 opens or closes the gas supply line 420 and adjusts the flow rate of process gas supplied through the gas supply line 420.

[0098] The plasma source excites process gas in the chamber 100 into a plasma state. In an exemplary embodiment of the present application, a capacitively coupled plasma (CCP) is used as the plasma source. The CCP can include an upper electrode and a lower electrode inside the chamber 100. The upper electrode and the lower electrode can be disposed vertically inside the chamber 100 in parallel to each other. Either of the two electrodes applies high-frequency power, and the other electrode can be grounded. An electromagnetic field can be formed in the space between the two electrodes, and process gas supplied to the space can be excited into a plasma state. The plasma is used to perform a substrate W processing process. According to an example, the upper electrode can be disposed to the showerhead unit 300, and the lower electrode can be disposed to the electrode plate. High-frequency power can be applied to the lower electrode, and the upper electrode 420 can be grounded. Alternatively, high-frequency power can be applied to both the upper electrode and the lower electrode. Accordingly, an electromagnetic field is generated between the upper electrode 420 and the lower electrode. The generated electromagnetic field excites process gas provided in the chamber 100 into a plasma state.

[0099] The liner unit 500 prevents the inner wall of the chamber 100 and the support unit 200 from being damaged during a process. The liner unit 500 prevents impurities generated during a process from being deposited on the inner wall and the support unit 200. The liner unit 500 includes an inner liner 510 and an outer liner 530.

[0100] The outer liner 530 is disposed on the inner wall of the chamber 100. The outer liner 530 has a space with an open upper surface and a lower surface. The outer liner 530 can be disposed in a cylindrical shape. The outer liner 530 can have a radius corresponding to the inner surface of the chamber 100. The outer liner 530 is disposed along the inner surface of the chamber 100.

[0101] The outer liner 530 can be disposed of an aluminum material. The outer liner 530 protects the inner surface 110 of the chamber 100. In a process in which a process gas is excited, arc discharge can occur in the chamber 100. The arc discharge damages the chamber 100. The outer liner (not shown) protects the inner surface of the chamber 100, thereby preventing the inner surface of the chamber 100 from being damaged by the arc discharge.

[0102] The inner liner 510 is provided to cover the support unit 200. The inner liner 510 is disposed in a ring shape. The inner liner 510 is disposed to surround the support plate 210, the electrode plate 220, and the lower support 240. The inner liner 510 can be disposed of an aluminum material. The inner liner 510 protects the outer surface of the support unit 200.

[0103] The baffle unit 600 is located between the inner wall of the chamber 100 and the support unit 200. The baffle is disposed in a circular ring shape. A plurality of through-holes are formed in the baffle. Process gas disposed in the chamber 100 is discharged to the discharge hole 102 through the through-holes of the baffle. The flow of gas can be controlled according to the shape of the baffle and the shape of the through-holes.

[0104] The controller 800 can control the substrate processing apparatus 10. The controller 800 can control the substrate processing apparatus 10 so that the substrate processing apparatus 10 can perform a plasma processing process for the substrate W. Further, the controller 800 can control the power supply module 290 to be described below. In addition, the controller 800 can control the power supply module 290 to be described below to heat a plurality of regions of the substrate W.

[0105] The controller 800 can include a processor controller consisting of a microprocessor (computer) that implements control of the substrate processing apparatus 10, a keyboard for performing command input operations and the like to manage the substrate processing apparatus 10 by an operator, a user interface including a display and the like for visualizing and displaying movement situations of the substrate processing apparatus 10, and a storage unit that stores a control program for implementing processing implemented in the substrate processing apparatus 10 by control of the process controller or various data, and a program (i.e., a processing recipe) for implementing processing in each configuration unit according to processing conditions. Further, the user interface and the storage unit can be connected to the process controller. The processing recipe can be stored in a storage medium of the storage unit, and the storage medium can be a hard disk, a portable disk such as a CD-ROM or a DVD, or a semiconductor memory such as a flash memory.

[0106] Hereinafter, the power line module 280 and the power supply module 290 for applying power to the heating element 230 according to the present application will be described. Further, a method for supplying power to the heating element 130 according to the present application will be described. The power supply module 290 can also be implemented by hardware, software, or a combination of hardware and software.

[0107] Figure 3 A diagram for schematically showing a circuit structure of a heating element including a power line module, a power supply module, and a support unit according to a first exemplary embodiment of the present application.

[0108] Referring to Figure 3 The heating elements 230 can be arranged to control temperatures of different regions of the substrate W. The heating elements 230 can be arranged in a matrix pattern to control temperatures of corresponding regions of the substrate W. The heating elements 230 can be provided in an M x N array. For example, a total of 16 heating elements can be provided in a 4 x 4 array. However, the heating elements 230 are not limited thereto, and the total number of the heating elements 230 can be variously changed as needed.

[0109] Hereinafter, the heating element 230 arranged in (M, N) of an M x N pattern can be referred to as an M-Nth heating element 230MN. For example, the heating element 230 arranged in (1, 1) of an M x N pattern can be referred to as a 1-1st heating element 23011. The heating element 230 arranged in (1, 2) of an M x N pattern can be referred to as a 1-2nd heating element 23012. The heating element 230 arranged in (3, 1) of an M x N pattern can be referred to as a 3-1st heating element 23031.

[0110] The power line module 280 can transmit power generated by the power supply module 290 to the heating element 230. The power line module 280 can include a power supply line 281 and a power return line 282.

[0111] The power supply line 281 can transmit power generated by the power supply module 290 to the heating element 230. The power supply line 281 can be connected to the power supply segment of the heating element 230.

[0112] A plurality of power supply lines 281 can be provided. For example, the power supply line 281 can be provided as M of the number of rows of the MxN pattern. For example, the power supply line 281 electrically connected to a group of heating elements 230 provided in the first row of the MxN pattern can be referred to as a first power supply line 2811. Further, the power supply line electrically connected to a group of heating elements 230 provided in the second row of the MxN pattern can be referred to as a second power supply line 2812. Further, the power supply line electrically connected to a group of heating elements 230 provided in the Mth row of the MxN pattern can be referred to as an Mth power supply line 281M.

[0113] The power return line 282 can return power transmitted to the heating element 230 to the power supply module 290. The power return line 282 can be connected to the power return segment of the heating element 230. Further, a rectifier D can be installed on the power return line 282, which allows current generated by the power supply 291 to flow in one direction. The rectifier D corresponding to the M-Nth heating element 230MN can be referred to as an M-Nth rectifier DMN. For example, the rectifier D corresponding to the 1st-1st heating element 23011 can be referred to as a 1st-1st rectifier D11, and the rectifier D corresponding to the 1st-2nd heating element 23012 can be referred to as a 1st-2nd rectifier D12.

[0114] A plurality of power return lines 282 can be provided. For example, the power return line 282 can be provided as N of the number of columns of the MxN pattern. For example, the power return line 282 electrically connected to a group of heating elements 230 provided in the first column of the MxN pattern can be referred to as a first return supply line 2821. Further, the power return line 282 electrically connected to a group of heating elements 230 provided in the second column of the MxN pattern can be referred to as a second power return line 2822. Further, the power return line electrically connected to a group of heating elements 230 provided in the Nth column of the MxN pattern can be referred to as an Nth power return line 282N.

[0115] Further, the respective heating elements 230 can not share the same power supply line 281 and power return line 282. For example, the 1-1 heating element 23011 can be electrically connected to the first power supply line 2811 and electrically connected to the first power return line 2821. The 1-2 heating element 23012 can be electrically connected to the first power supply line 2811 and electrically connected to the second power return line 2822. When the 1-1 heating element 23011 and the 1-2 heating element 23012 are compared with each other, the 1-1 heating element 23011 and the 1-2 heating element 23012 share the first power supply line 2811 but do not share the power return line 2822. This is to address the problem that the heat dissipation of each heating element 230 is independently controlled, but in this case, the connection of the power supply line 281 and the power return line 282 can be complicated. When the connection between the power supply line 281 and the power return line 282 becomes complicated, problems such as short circuits can frequently occur and maintenance becomes difficult. However, according to the exemplary embodiment of the present application, each heating element 230 is connected to any one of the power supply lines 281 and any one of the power return lines 282, but the heating elements 230 do not share the same power supply line and power return line, and thus independent control of the heating elements 230 and simplification of the connection can be achieved.

[0116] The power supply module 290 can apply power to the heating elements 230 through the power line module 280. The power supply module 290 can be configured to continuously supply power to two or more heating elements 230. The power supply module 290 can include supply switches Sa, Sb, Sc, and Sd, return switches S1, S2, S3, and S4, a power supply 291, a first input unit 292, a second input unit 293, a determination unit 294, and a gate unit 295.

[0117] The supply switches Sa, Sb, Sc, and Sd can be installed in the power supply lines 281. The supply switches Sa, Sb, Sc, and Sd can be installed in the power supply lines 281, respectively. The supply switches Sa, Sb, Sc, and Sd can include a first supply switch Sa installed in the first power supply line 2811, a second supply switch Sb installed in the second power supply line 2812, a third supply switch Sc installed in the third power supply line 2813, and a fourth supply switch Sd installed in the fourth power supply line 2814.

[0118] The return switches S1, S2, S3, and S4 can be installed in the power return line 282. The return switches S1, S2, S3, and S4 can be installed in the power return line 282, respectively. The return switches S1, S2, S3, and S4 can include a first return switch S1 installed in the first power return line 2821, a second return switch S2 installed in the second power return line 2822, a third return switch S3 installed in the third power return line 2823, and a fourth return switch S4 installed in the fourth power return line 2824.

[0119] The heating element 230 can be disposed between the power supply line 281 and the power return line 282.

[0120] The power supply 291 can be disposed within a closed circuit, which can be formed by the power supply line 281 and the power return line 282. The power supply 291 can be a direct current (DC) or an alternating current (AC) power supply. The power supply 291 can generate power for driving (i.e., heating) the heating element 230.

[0121] The first input unit 292 can receive a control signal applied by the controller 800. The first input unit 292 can receive a control signal applied by the controller 800 and deliver the control signal to the gate unit 295, which will be described below. The control signal delivered to the gate unit 295 can control the supply switches Sa, Sb, Sc, and Sd.

[0122] The second input unit 293 can receive a control signal applied by the controller 800. The second input unit 293 can receive a control signal applied by the controller 800 and deliver the control signal to the return switches S1, S2, S3, and S4. Further, the second input unit 293 can deliver a control signal applied by the controller 800 to the determination unit 294, which will be described below.

[0123] The determination unit 294 can receive the control signal received by the second input unit 293 as it is and determine true or false by comparing with a truth table in which a received signal is pre-stored. In the case of true, an on signal can be output, and in the case of false, an off signal can be output. Hereinafter, a signal for turning on the supply switch and a return signal are referred to as "1", and a signal for turning off the supply switch and the return switch are referred to as "0".

[0124] The truth table stored in the determination unit 294 can be as follows.

[0125] [Table 1]

[0126]

[0127]

[0128] In other words, when the signal received by the second input unit 293 includes two or more enable signals, the determining unit 294 can output an enable signal again. The determining unit 294 can do this by, for example... Figure 4 The hardware logic shown is used for implementation. The determination unit 294 can be constructed from AND gates 294a, 294b, and 294e, XOR gates 294c and 294d, and OR gate 294f. Furthermore, in addition to hardware logic, the determination unit 294 can also be simply implemented as a software or field-programmable gate array (FPGA). The signal output from the determination unit 294 can be transmitted to gate unit 295.

[0129] Return to reference Figure 3 Gate unit 295 can receive input signals transmitted from controller 800 to first input unit 292. Furthermore, gate unit 295 can receive signals output by determination unit 294.

[0130] Gate unit 295 may include multiple AND gates 295a, 295b, 295c and 295d. AND gates 295a, 295b, 295c and 295d may include a first AND gate 295a corresponding to the first supply switch Sa, a second AND gate 295b corresponding to the second supply switch Sb, a third AND gate 295c corresponding to the third switch Sc, and a fourth AND gate 295d corresponding to the fourth supply switch Sd.

[0131] Figure 5 A control signal for operating a heating element is applied to Figure 3 A diagram showing the state of the circuit structure. (Refer to...) Figure 5 The controller 800 can input a (1,0,0,0) signal to the first input unit 292 and the second input unit 293. Therefore, the first return switch S1 can be turned on, and the other return switches can be turned off.

[0132] The signal (1,0,0,0) input to the second input unit 293 can be input to the determination unit 294 as is. Since the signal (1,0,0,0) is the input signal corresponding to the setting 8 of the truth table, the determination unit 294 can determine it as false and output the shutdown signal "0".

[0133] The signal (1,0,0,0) input to the first input unit 292 can be transmitted to each of the AND gates 295a, 295b, 295c and 295d of the gate unit 295. Further, the turn-off signal output by the determining unit 294 can be transmitted to each of the AND gates 295a, 295b, 295c and 295d.

[0134] In this case, none of the AND gates 295a, 295b, 295c, and 295d outputs a gate that outputs "1" as an on signal. That is, when the controller 800 generates a driving signal for controlling only one heating element 230, the heating element 230 does not operate.

[0135] Figure 6 To apply a control signal for operating two heating elements to the circuit structure of Figure 3 a state diagram of the case. Referring to Figure 6 , the controller 800 can input a signal (1, 0, 1, 0) to the first input unit 292 and the second input unit 293. Accordingly, the first return switch S1 and the third return switch S3 can be turned on, and the remaining return switches can be turned off.

[0136] The signal (1, 0, 1, 0) input to the second input unit 293 can be input to the determination unit 294 as it is. Since the signal (1, 0, 1, 0) is an input signal corresponding to the set 10 of the truth table, the determination unit 294 can determine true and output an off signal "1".

[0137] The signal (1, 0, 1, 0) input to the first input unit 292 can be transmitted to each of the AND gates 295a, 295b, 295c, and 295d of the gate unit 295. Further, the on signal output by the determination unit 294 can be transmitted to each of the AND gates 295a, 295b, 295c, and 295d.

[0138] In this case, the first AND gate 295a and the third AND gate 295c among the AND gates 295a, 295b, 295c, 295d output "1" as an on signal. Accordingly, the first supply switch Sa and the third supply switch Sc are turned on. Accordingly, power is applied to the 1-3 heating element 23013 and the 3-1 heating element 23031, which can be driven.

[0139] That is, according to the exemplary embodiment of the present application, at least two heating elements 230 can be continuously driven at the same time. That is, there is no case where one heating element 230 is driven alone. Continuously driving a plurality of heating elements 230 can be advantageous in heating a substrate W at a high speed and maintaining the temperature of the substrate W at a high temperature, and according to the exemplary embodiment of the present application, it is possible to easily heat a substrate W at a high speed and maintain the substrate at a high temperature. In addition, when one heating element 230 is driven alone, a specific region of the substrate W can be locally heated, which can degrade the temperature uniformity of the substrate W. However, since a plurality of heating elements 230 of the present application are commonly continuously driven, it is possible to prevent only a specific region of the substrate W from being locally heated and thus degrade the temperature uniformity of the substrate W.

[0140] (Second Exemplary Embodiment)

[0141] The other configurations of the substrate processing apparatus 10 can be the same as or at least similar to those described in the first exemplary embodiment except for the configuration of the support unit 200 according to the second exemplary embodiment.

[0142] Figure 7 A plan view of the support unit according to the second exemplary embodiment of the present application, viewed from the top.

[0143] In the above example, the rectifier D is described as being installed on the power return line 282 as an example, but the present application is not limited thereto, and the rectifier D can be installed on the power supply line 281 as shown in FIG. 7. The rectifier D can be embedded in the support plate 210.

[0144] (Third Exemplary Embodiment)

[0145] The other configurations of the substrate processing apparatus 10 can be the same as or at least similar to those described in the first exemplary embodiment except for the configuration of the support unit 200 according to the third exemplary embodiment.

[0146] Figure 8 A plan view of a first plane of the support unit according to the third exemplary embodiment of the present application, viewed from the top, Figure 9 A plan view of a second plane of the support unit according to the third exemplary embodiment of the present application, viewed from the top, and Figure 8 A cross-sectional view of the support unit according to the third exemplary embodiment of the present application. Specifically, Figure 10 A plan view of a first plane 1002 of the support plate 210, viewed from the top, and Figure 8 A plan view of a second plane 1003 of the support plate 210, viewed from the top. Figure 8 Figure 9 Referring to

[0147] Referring to Figures 8 to 10 The support plate 210 can include a first insulating layer 210b, a second insulating layer 210c, and a third insulating layer 1004 disposed between the first insulating layer 210b and the second insulating layer 210c. That is, the first insulating layer 210b, the third insulating layer 1004, and the second insulating layer 210c can be sequentially stacked from top to bottom.

[0148] ​The heating element 230 can be disposed to the first insulating layer 210b. The power supply line 281 can be disposed to the first insulating layer 210b. The power return line 282 can be disposed to the third insulating layer 1004. Since the heating element 230 and the power supply line 281 are disposed to the first insulating layer 210b which is an insulating layer, the heating element 230 and the power supply line 281 can be electrically connected to each other. Since the heating element 230 and the power return line 282 are disposed to different insulating layers, the support unit 200 according to the third exemplary embodiment can have conductive vias 1001 electrically connecting the heating element 230 and the power return line 282. The conductive vias 1001 can correspond to the heating element 230, respectively. The conductive vias 1001 can be disposed in a number corresponding to the heating element 230.

[0149] (Fourth Exemplary Embodiment)

[0150] Except for the configuration of the support unit 200 according to the fourth exemplary embodiment, the other configurations of the substrate processing apparatus 10 can be the same as or at least similar to those described in the first exemplary embodiment.

[0151] Figure 11 FIG. 10 is a view showing a first plane of a support unit viewed from the top according to the fourth exemplary embodiment of the present application. Figure 12 FIG. 11 is a view showing a second plane of the support unit viewed from the top according to the fourth exemplary embodiment of the present application. Figure 11

[0152] Referring to FIGS. 10 and 11, Figure 11 and 12 The power supply line 281 and the heating element 230 can be disposed on the same plane, the first plane 1102. Further, the power return line 282 can be disposed on the second plane 1103. The first plane 1102 and the second plane 1103 can be separated from each other by an insulating layer.

[0153] The power supply line 281 can be electrically connected to the first lead 1104 in the second plane 1103 through the first conductive via 1001a extending between the first plane 1102 and the second plane 1103. The first lead 1104 can pass through the first hole 1101 formed in the electrode plate 220, which can be a cooling plate, while maintaining electrical insulation between the leads.

[0154] ​The power return line 282 can be electrically connected to the second lead line 1105 in the second plane 1103 through the second conductive via hole 1001b extending between the first plane 1102 and the second plane 1105. The second lead line 1105 can pass through the second hole 1106 formed on the electrode plate 220, which can be a cooling plate, while maintaining electrical insulation between the lead lines. When the heating element 230, the power supply line 281, and the power return line 282 are thus arranged, temperature uniformity of the substrate W can be improved by reducing the number of holes formed on the electrode plate 220.

[0155] (Fifth exemplary embodiment)

[0156] Except for the configuration of the support unit 200 according to the fifth exemplary embodiment, the other configurations of the substrate processing apparatus 10 can be the same as or at least similar to those described in the first exemplary embodiment.

[0157] Figure 13 FIG. 12 is a view of a first plane of a support unit according to the fifth exemplary embodiment of the present application, as viewed from the top, Figure 14 FIG. 13 is a view of a second plane of the support unit of Figure 13 FIG. 14 is a view of a third plane of the support unit of Figure 15 FIG. 15 is a view of a fourth plane of the support unit of Figure 13 FIG. 16 is a view of a fifth plane of the support unit of Figure 16 FIG. 17 is a cross-sectional view of the support unit of Figure 13 FIG. 18 is a cross-sectional view of the support unit of

[0158] Specifically, Figure 13 FIG. 19 is a view of a first plane 1201 of the support plate 210, as viewed from the top, Figure 14 FIG. 20 is a view of a second plane 1202 of the support plate 210, as viewed from the top, and Figure 15 FIG. 21 is a view of a third plane 1203 of the support plate 210, as viewed from the top.

[0159] Referring to Figures 13 to 16 The support unit 200 according to the fifth exemplary embodiment can further include a third insulating layer 1004 and a fourth insulating layer 1204 disposed between the first insulating layer 210b and the second insulating layer 210c. The third insulating layer 1004 can be disposed below the first insulating layer 210b, the fourth insulating layer 1204 can be disposed below the third insulating layer 1004, and the second insulating layer 210c can be disposed below the fourth insulating layer 1204.

[0160] The heating elements 230 can be provided to the first insulating layer 210b. The power supply line 281 can be provided to the third insulating layer 1004. The power return line 280 can be provided to the fourth insulating layer 1204. Further, the support unit 200 can include a plurality of first conductive vias 1001a that electrically connect the heating elements 230 provided to the first insulating layer 210b and the power supply line 281 provided to the third insulating layer 1004 to each other. Further, the support unit 200 can include a plurality of second conductive vias 1001b that electrically connect the heating elements 230 provided to the first insulating layer 210b and the power return line 282 provided to the fourth insulating layer 1204 to each other.

[0161] (Sixth exemplary embodiment)

[0162] Except for the configuration of the support unit 200 according to the sixth exemplary embodiment, the other configurations of the substrate processing apparatus 10 can be the same as or at least similar to those described in the first exemplary embodiment.

[0163] Figure 17 A diagram showing the layout of the heating elements of the support unit according to the sixth exemplary embodiment of the present application is schematically shown.

[0164] In the above examples, the heating elements 230 are described as being provided in a 4x4 array as an example. The array of the heating elements 230 can also include a 2x2 array as shown in Figure 17 .

[0165] (Sixth exemplary embodiment)

[0166] Except for the configuration of the support unit 200 according to the sixth exemplary embodiment, the other configurations of the substrate processing apparatus 10 can be the same as or at least similar to those described in the first exemplary embodiment.

[0167] Figure 18 A diagram showing the layout of the heating elements of the support unit according to the sixth exemplary embodiment of the present application is schematically shown.

[0168] In the above examples, the heating elements 230 are described as being arranged in a matrix form as an example, but the present application is not limited thereto. For example, the heating elements 230 can be arranged in a 2x2 array as shown in Figure 18As shown, some of the heating elements 230 can be arranged in a central region of the support plate 210, and others of the heating elements 230 can be arranged in a peripheral region of the support plate 210 to surround the heating elements 230 arranged in the central region of the support plate 210, when viewed from the top. The heating elements 230 arranged in the peripheral region of the support plate 210 can be divided into a group arranged in a first peripheral region adjacent to the central region and a group arranged in a second peripheral region farther from the central region of the support plate 210 than the first peripheral region. Further, the heating elements 230 arranged in the peripheral region of the support plate 210 can be arranged to be spaced apart from each other in the circumferential direction of the plate 210, when viewed from the top.

[0169] The foregoing detailed description has shown, by way of illustration, the principles of the application. Further, the above examples demonstrate and describe exemplary embodiments of the application, and the application can be used in various other combinations, modifications, and environments. That is, the foregoing examples are illustrative of the broad scope of the inventive concepts disclosed in this specification, the scope of equivalents, and / or the scope of the art. The foregoing exemplary embodiments describe the best mode of practicing the inventive concepts and various changes in the specific applications and uses of the inventive concepts are possible. Accordingly, the above detailed description of the application is not intended to limit the application to the disclosed exemplary embodiments. Further, the appended claims should be interpreted to include other exemplary embodiments.

Claims

1. A support unit supporting a substrate, the support unit comprising: a plate; a heating element provided to the plate and controlling a temperature of a substrate, wherein the heating element is arranged to control a temperature of different regions of the substrate; and a power supply module supplying power to the heating element, wherein the power supply module is configured to continuously supply power to at least two of the heating elements, the power supply module comprises a first input unit, a second input unit, a determination unit, and a gate unit, the first input unit receives a control signal applied by a controller and transmits the control signal to the gate unit, the second input unit transmits a control signal applied by the controller to the determination unit, the determination unit receives the control signal received by the second input unit and outputs an on signal again when the received signal includes at least two on signals, the gate unit receives a signal output from the determination unit and the control signal from the first input unit, so that the power supply module continuously supplies power to at least two of the heating elements.

2. The support unit according to claim 1, wherein the power supply module further comprises: a power source generating power, a power supply line connected to a power supply section of the heating element, and a power return line connected to a power return section of the heating element.

3. The support unit according to claim 2, wherein a plurality of the power supply lines and the power return lines are provided, each of the heating elements is connected to any one of the power supply lines and any one of the power return lines, and the heating elements do not share the same power supply line and power return line.

4. The support unit according to claim 3, wherein the power supply module further comprises: a supply switch installed in the power supply line, and a return switch installed in the power return line.

5. The support unit according to claim 4, wherein a plurality of the supply switches and the return switches are provided, the supply switches are respectively installed in the power supply lines, and the return switches are respectively installed in the power return lines.

6. The support unit according to claim 5, wherein the control signal from the controller received by the first input unit controls the supply switches, and the control signal from the controller received by the second input unit controls the return switches.

7. The support unit according to claim 6, wherein the gate unit comprises an AND gate corresponding to the supply switches, respectively, and the AND gates receive the signal input to the first input unit and the output signal output from the determination unit.

8. The support unit according to any one of claims 1 to 7, wherein a rectifier is installed at a rear section of the heating element.

9. An apparatus for processing a substrate, the apparatus comprising: a chamber providing a processing space in which a substrate is processed; and ​ a support unit for supporting and heating the substrate in the processing space; wherein the support unit comprises: a plate, a heating element provided to the plate and heating the substrate, wherein the heating element is arranged to control the temperature of different areas of the substrate, and a power supply module supplying power to the heating element, and the power supply module is configured to continuously supply power to at least two of the heating elements, the apparatus further comprises a controller controlling the power supply module, the power supply module comprises a first input unit, a second input unit, a determination unit and a gate unit, the first input unit receives a control signal applied by the controller and transmits the control signal to the gate unit, the second input unit transmits a control signal applied by the controller to the determination unit, the determination unit receives the control signal received by the second input unit and outputs an on signal again when the received signal comprises at least two on signals, the gate unit receives the signal output by the determination unit and the control signal from the first input unit, so that the power supply module continuously supplies power to at least two of the heating elements.

10. The apparatus for processing a substrate according to claim 9, wherein, the power supply module further comprises, a power source generating power applied to the heating element, a power supply line connected to a power supply segment of the heating element, and a power return line connected to a power return segment of the heating element.

11. The apparatus for processing a substrate according to claim 10, wherein, each of the heating elements is connected to any one of the power supply line and any one of the power return line, and the heating elements do not share the same power supply line and power return line.

12. The apparatus for processing a substrate according to claim 11, wherein, the power supply module comprises: a supply switch respectively mounted to the power supply line, and a return switch respectively mounted to the power return line.

13. The apparatus for processing a substrate according to claim 12, wherein, the control signal from the controller received by the first input unit controls the supply switch, and the control signal from the controller received by the second input unit controls the return switch.

14. The apparatus for processing a substrate according to claim 13, wherein, the controller transmits the same control signal to the first input unit and the second input unit.

15. The apparatus for processing a substrate according to claim 14, wherein, the gate unit comprises an AND gate corresponding to the supply switch respectively, and the AND gate receives the signal input to the first input unit and the output signal output by the determination unit.

16. An apparatus for processing a substrate, the apparatus comprising: a chamber providing a processing space in which a substrate is processed, a support unit for supporting and heating the substrate in the processing space, a heating element provided to the plate and heating the substrate, wherein the heating element is arranged to control the temperature of different areas of the substrate, and a power supply module supplying power to the heating element, and the power supply module is configured to continuously supply power to at least two of the heating elements, the apparatus further comprises a controller controlling the power supply module, the power supply module comprises a first input unit, a second input unit, a determination unit and a gate unit, the first input unit receives a control signal applied by the controller and transmits the control signal to the gate unit, the second input unit transmits a control signal applied by the controller to the determination unit, the determination unit receives the control signal received by the second input unit and outputs an on signal again when the received signal comprises at least two on signals, the gate unit receives the signal output by the determination unit and the control signal from the first input unit, so that the power supply module continuously supplies power to at least two of the heating elements. a support unit that supports the substrate in the processing space; a plasma source that generates plasma for processing the substrate in the processing space; and a controller, wherein the support unit includes: a plate, a heating element provided to the plate and heating the substrate, wherein the heating element is arranged to control temperature of different areas of the substrate, and a power supply module that supplies power to the heating element, and the power supply module is configured to continuously supply power to at least two of the heating elements, the power supply module includes a first input unit, a second input unit, a determination unit, and a gate unit, the first input unit receives a control signal applied by the controller and transmits the control signal to the gate unit, the second input unit transmits a control signal applied by the controller to the determination unit, the determination unit receives the control signal received by the second input unit and outputs an on signal again when the received signal includes at least two on signals, the gate unit receives the signal output by the determination unit and the control signal from the first input unit, so that the power supply module continuously supplies power to at least two of the heating elements.

17. The apparatus for processing a substrate according to claim 16, wherein, the power supply module further includes, a power source that generates power applied to the heating element, a power supply line connected to a power supply segment of the heating element, a power return line connected to a power return segment of the heating element, a supply switch installed in the power supply line, respectively, a return switch installed in the power return line, respectively, wherein the control signal from the controller received by the first input unit controls the supply switch, the control signal from the controller received by the second input unit controls the return switch, each of the heating elements is connected to any one of the power supply line and any one of the power return line, and the heating elements do not share the same power supply line and power return line. ​

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