Semiconductor rectifier bridge

Abstract

The application discloses a semiconductor rectifier bridge, which comprises a first chip substrate, a second chip substrate and a first pin and a second pin protruding from an epoxy encapsulation, the first chip substrate comprises a first support area and a first lead area perpendicular to one end of the first support area, a gap is arranged at the connection between the second support area and the second lead area and at the side edge close to the first bending part, and the gap is arranged close to the first bending part in a horizontal plane; a third chip and a fourth chip are arranged on the upper surface of the first support area in a spaced mode, and a through hole is arranged in the area between the third chip and the fourth chip on the first support area. The application can avoid the product failure caused by the collision between the chips and between the chips and the substrate, improve the impact force of the epoxy on the substrate during injection molding, and improve the overall processing yield of the product and the stability during long-term use.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor packaging, in particular to a semiconductor rectifier bridge. BACKGROUND

[0002] In recent years, the trend of miniaturization and light weight of power supply products is becoming more and more obvious, and higher requirements are put forward for the power density of the SMD rectifier bridge product. The existing packaging structure is limited by the internal space of the product, and it is difficult to package larger size chips, which limits the improvement of the power density of the rectifier bridge product.

[0003] The existing packaging structure mainly has the following defects: first, when packaging large size chips, the chip spacing is insufficient, and there is a risk of product failure caused by the collision of the chips; second, the position of the chip is greatly offset during high temperature welding, and in the case of insufficient chip spacing, the risk of collision of the chips is increased. SUMMARY

[0004] The purpose of the present application is to provide a semiconductor rectifier bridge which can not only avoid the product failure problem caused by the collision between the chips and between the chips and the substrate, but also improve the impact force of the epoxy on the substrate during injection molding, and improve the overall processing yield and stability of the product during long-term use.

[0005] To achieve the above purpose, the technical scheme adopted by the present application is: a semiconductor rectifier bridge, comprising: a first chip substrate, a second chip substrate and a first pin and a second pin extending from the epoxy packaging body, the first chip substrate comprises a first support area and a first lead area perpendicular to one end of the first support area, the second chip substrate comprises a second support area arranged in parallel and spaced apart from the first support area, and a second lead area perpendicular to one end of the second support area and located outside the first support area away from the first lead area, one end of the second lead area close to the second support area has a downward first bending part, thereby forming an upper horizontal part and a lower horizontal part on both sides of the first bending part, and the upper surface of the lower horizontal part located outside the first support area is lower than the lower surface of the first support area in the vertical direction;

[0006] The upper surface of the first support area is spaced apart and provided with a third chip and a fourth chip, a through hole is formed in the area of the first support area between the third chip and the fourth chip, a notch is provided at the connection between the second support area and the second lead area and located close to the side edge of the first bending part, and the notch is arranged close to the first bending part in the horizontal plane.

[0007] The further improved scheme in the above technical scheme is as follows:

[0008] 1. The first chip substrate, the second chip substrate, each of the regions for connecting with the chip is provided with a support part, the area of the support part is smaller than the area of the lower surface of the chip, and each of the support parts is located directly below the central region of the corresponding chip.

[0009] 2. The side surface at the edge of the support part is a slope.

[0010] 3. The notch is a semicircular notch.

[0011] 4. The first lead area and the second lead area each extend outward from the same side of the epoxy package away from one end of the first support area and the second support area.

[0012] 5. The first lead area and the second lead area each have a downward second bending part near the edge region of the epoxy package, so that the lower surface of the first lead area and the second lead area extending out of the epoxy package region is flush with the lower surface of the epoxy package.

[0013] 6. The third chip is located at one end of the first support area near the second lead area.

[0014] 7. The third chip extends outward from the first support area on the side close to the second lead area.

[0015] Due to the use of the above technical solutions, the present application has the following advantages and effects compared with the prior art:

[0016] 1. The semiconductor rectifier bridge of the present application separates the two chip substrates that are close to each other in the horizontal direction in the vertical direction by providing a first bending part on the second lead area adjacent to the first chip substrate on the second chip substrate, so that the chip can be placed at the edge of the chip substrate, the distance between the third chip and the fourth chip is increased without increasing the product structure, and a through hole can be provided therebetween, which can not only avoid the product failure caused by the collision between the chips and the collision between the chip and the substrate, but also improve the impact force of the epoxy on the substrate during injection molding, avoid damage to the inner wall structure of the epoxy and the chip, thereby improving the overall processing yield of the product and the stability during long-term use; further, by providing a notch close to the first bending part, deformation at the edge of the second support area caused by the first bending part is avoided, which in turn causes the chip on the second support area to tilt, warp or have a mismatched height, causing the chip and the substrate to be virtually connected or the welding to be unstable, ensuring the positional accuracy of the chip and the stability of the connection, thereby improving the overall yield and quality of the product.

[0017] 2. In the semiconductor rectifier bridge of the present invention, a support portion is provided on the area of ​​the first chip substrate and the second chip substrate for connecting to the chip. The area of ​​the support portion is smaller than the area of ​​the lower surface of the chip, and each of the support portions is located directly below the central area of ​​the corresponding chip. This can not only reduce the positional offset and rotation of the chip during high-temperature welding and improve the positional accuracy of chip welding, but also increase the connection strength between the epoxy and the chip, thereby improving the stability of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Attachment Figure 1 Schematic diagram of the structure of the semiconductor rectifier bridge of the present invention;

[0019] Attachment Figure 2 It is a schematic diagram of the partial structure of the semiconductor rectifier bridge of the present invention;

[0020] Attachment Figure 3 It is a cross-sectional view along the AA direction.

[0021] In the above figures: 1. Epoxy package; 2. First chip substrate; 21. First support area; 22. First lead area; 3. Second chip substrate; 31. Second support area; 32. Second lead area; 4. First pin; 5. Second pin; 6. Chip; 61. First chip; 62. Second chip; 63. Third chip; 64. Fourth chip; 7. Connecting piece; 8. First bending portion; 91. Upper horizontal portion; 92. Lower horizontal portion; 10. Second bending portion; 11. Support portion; 12. Notch; 13. Through hole. DETAILED DESCRIPTION

[0022] The present invention will be further described below with reference to the accompanying drawings and embodiments:

[0023] Embodiment 1: A semiconductor rectifier bridge comprises: a first chip substrate 2, a second chip substrate 3, and a first pin 4 and a second pin 5, which are enclosed in an epoxy package 1. The first chip substrate 2 comprises a first support area 21 for connecting to at least two chips 6 and a first lead area 22 perpendicular to one end of the first support area 21. The second chip substrate 3 comprises a second support area 31 arranged parallel to and spaced apart from the first support area 21 and a second lead area 31 perpendicular to one end of the second support area 31 and located at the first support area 21 away from the second lead area 5. A second lead region 32 is provided outside one end of the first lead region 22. The connection between the second lead region 32 and the second support region 31 has a first bend 8, so that the upper surface of the second lead region 32 located outside the first support region 21 is lower than the lower surface of the first support region 21 in the vertical direction, and the height difference between the upper and lower horizontal portions is 0.1 cm. A notch 12 is provided at the connection between the second support region 31 and the second lead region 32 and at an edge close to the first bend 8. The notch 12 is arranged close to the first bend 8 in the horizontal plane.

[0024] The first chip substrate 2 includes a first support area 21 and a first lead area 22 perpendicular to one end of the first support area 21. The second chip substrate 3 includes a second support area 31 arranged parallel to and spaced apart from the first support area 21, and a second lead area 32 perpendicular to one end of the second support area 31 and located outside the end of the first support area 21 away from the first lead area 22. The second lead area 32 has a downward first bending portion 8 at one end close to the second support area 31, thereby forming an upper horizontal portion 91 and a lower horizontal portion 92 on both sides of the first bending portion 8, and the upper surface of the lower horizontal portion 92 located outside the first support area 21 is lower than the lower surface of the first support area 21 in the vertical direction. The height difference between the upper and lower horizontal portions is 0.1 cm. The third chip 63 and the fourth chip 64 are arranged at intervals on the upper surface of the first support area 21. A through hole 13 is opened in the area between the third chip 63 and the fourth chip 64 on the first support area 21.

[0025] A support portion 11 is provided in the area of ​​each of the first chip substrate 2 and the second chip substrate 3 for connecting to the chip 6. The area of ​​the support portion 11 is smaller than the area of ​​the lower surface of the chip 6, and each of the support portions 11 is located directly below the central area of ​​the corresponding chip 6; the side surface at the edge of the support portion 11 is a slope; the notch 12 is a semicircular notch; the first lead area 22 and the second lead area 32 each have one end away from the first support area 21 and the second support area 31 and extend outward from the same side of the epoxy encapsulation body 1; the first lead area 22 and the second lead area 32 each have a downward second bend portion 10 near the edge area of ​​the epoxy encapsulation body 1, so that the lower surface of the area where the first lead area 22 and the second lead area 32 extend out of the epoxy encapsulation body 1 is flush with the lower surface of the epoxy encapsulation body 1, and the height difference between the two sides of the second bend portion is 0.2 cm.

[0026] Embodiment 2: A semiconductor rectifier bridge, comprising: a first chip substrate 2, a second chip substrate 3 and a first pin 4, a second pin 5 extending from an epoxy package 1, the first chip substrate 2 comprising a first support area 21 for connecting with at least two chips 6 and a first lead area 22 perpendicular to one end of the first support area 21, the second chip substrate 3 comprising a second support area 31 arranged in parallel with the first support area 21 and a second lead area 32 perpendicular to one end of the second support area 31 and located outside the first support area 21 away from the first lead area 22, the second lead area 32 having a first bending part 8 at the connection with the second support area 31, so that the upper surface of the second lead area 32 outside the first support area 21 is lower than the lower surface of the first support area 21 in the vertical direction, the height difference between the upper and lower horizontal parts being 0.1 cm, the second support area 31 having a notch 12 at the connection with the second lead area 32 and located at the side edge close to the first bending part 8, the notch 12 being arranged close to the first bending part 8 in the horizontal plane.

[0027] The first chip substrate 2 comprises a first support area 21 and a first lead area 22 perpendicular to one end of the first support area 21, the second chip substrate 3 comprises a second support area 31 arranged in parallel with the first support area 21 and a second lead area 32 perpendicular to one end of the second support area 31 and located outside the first support area 21 away from the first lead area 22, the second lead area 32 having a first bending part 8 at the end close to the second support area 31, thereby forming an upper horizontal part 91 and a lower horizontal part 92 on both sides of the first bending part 8, and the upper surface of the lower horizontal part 92 outside the first support area 21 is lower than the lower surface of the first support area 21 in the vertical direction, the height difference between the upper and lower horizontal parts being 0.1 cm, the upper surface of the first support area 21 being spaced apart from a third chip 63 and a fourth chip 64, and a through hole 13 is formed in the area of the first support area 21 between the third chip 63 and the fourth chip 64.

[0028] The third chip 63 is located at one end of the first supporting area 21 close to the second lead area 32; the third chip 63 extends out of the first supporting area 21 close to one side of the second lead area 32; the upper surface of the second chip substrate 3 is provided with the first chip 61 and the second chip 62 at intervals, and the positive poles of the first chip 61 and the second chip 62 are electrically connected to the first chip substrate 2; the upper surface of the first chip substrate 2 is provided with the third chip 63 and the fourth chip 64 at intervals, and the negative poles of the third chip 63 and the fourth chip 64 are electrically connected to the second chip substrate 3; the negative pole of the first chip 61 and the positive pole of the third chip 63 are electrically connected to one end of the first pin 4 in the epoxy package 1 through a connecting piece 7; the negative pole of the second chip 62 and the positive pole of the fourth chip 64 are electrically connected to one end of the second pin 5 in the epoxy package 1 through another connecting piece 7; the first chip substrate 2 and the second chip substrate 3 are copper substrates.

[0029] When the semiconductor rectifier bridge is used, the two chip substrates close to each other in the horizontal direction are spatially separated in the vertical direction through the second chip substrate and the first bending part on the second lead area, so that the chips can be arranged at the edges of the chip substrates, the distance between the third chip and the fourth chip is increased without increasing the product structure, and a through hole can be formed therebetween, which can avoid product failure caused by collision between the chips and between the chips and the substrate, improve the impact force of the epoxy on the substrate during injection molding, avoid damage to the inner wall structure of the epoxy and the chips, and improve the overall processing yield and stability of the product during long-term use.

[0030] Further, through the setting of the gap close to the first bending part, deformation at the edge of the second supporting area caused by the first bending part is avoided, which in turn causes the chips on the second supporting area to tilt, warp or have a mismatched height, causing the chips and the substrate to be virtually connected or the welding to be unstable, ensuring the position accuracy of the chips and the stability of the connection, thereby improving the overall yield and quality of the product.

[0031] In addition, the area of the first chip substrate and the second chip substrate for connecting with the chips is provided with a supporting part, the area of the supporting part is smaller than the area of the lower surface of the chip, and each supporting part is located directly below the central area of the corresponding chip, which can reduce the position deviation and rotation of the chip during high-temperature welding, improve the position accuracy of the chip welding, and improve the connection strength between the epoxy and the chip, thereby improving the stability of the product.

[0032] The above examples are only for illustrating the technical concept and characteristics of the present application, and the purpose is to enable those skilled in the art to understand the content of the present application and to implement it, and cannot limit the protection scope of the present application. Any equivalent changes or modifications made according to the spirit and essence of the present application shall be covered within the protection scope of the present application.

Claims

1. A semiconductor rectifier bridge comprising: A first chip substrate (2), a second chip substrate (3), and a first lead (4) and a second lead (5) enclosed in an epoxy package (1), wherein the first chip substrate (2) includes a first support area (21) and a first lead area (22) perpendicular to one end of the first support area (21); and the second chip substrate (3) includes a second support area (31) arranged parallel to and spaced apart from the first support area (21) and an end perpendicular to the second support area (31) and located outside one end of the first support area (21) away from the first lead area (22). a second lead region (32), wherein one end of the second lead region (32) close to the second support region (31) has a downward first bent portion (8), thereby forming an upper horizontal portion (91) and a lower horizontal portion (92) on both sides of the first bent portion (8), and the upper surface of the lower horizontal portion (92) located outside the first support region (21) is lower than the lower surface of the first support region (21) in the vertical direction, and one end of each of the first lead region (22) and the second lead region (32) away from the first support region (21) and the second support region (31) extends outward from the same side of the epoxy package (1); A third chip (63) and a fourth chip (64) are arranged at intervals on the upper surface of the first supporting area (21); a through hole (13) is provided in an area between the third chip (63) and the fourth chip (64) on the first supporting area (21); a notch (12) is provided at the connection between the second supporting area (31) and the second lead area (32) and at an edge close to one side of the first bending portion (8); the notch (12) and the first bending portion (8) are arranged close to each other on a horizontal plane.

2. The semiconductor rectifier bridge according to claim 1, characterized in that: A support portion (11) is provided on each of the first chip substrate (2) and the second chip substrate (3) in an area for connection with the chip (6), the area of ​​the support portion (11) being smaller than the area of ​​the lower surface of the chip (6), and each of the support portions (11) is located directly below the central area of ​​the corresponding chip (6).

3. The semiconductor rectifier bridge according to claim 2, characterized in that: The side surface at the edge of the support portion (11) is a sloped surface.

4. The semiconductor rectifier bridge according to claim 1, wherein: The notch (12) is a semicircular notch.

5. The semiconductor rectifier bridge according to claim 1, characterized in that: The first lead area (22) and the second lead area (32) each have a downward second bent portion (10) near the edge area of ​​the epoxy package (1), so that the lower surface of the first lead area (22) and the second lead area (32) extending out of the epoxy package (1) is flush with the lower surface of the epoxy package (1).

6. The semiconductor rectifier bridge according to claim 1, characterized in that: The third chip (63) is located at one end of the first supporting area (21) close to the second lead area (32).

7. The semiconductor rectifier bridge according to claim 6, characterized in that: The third chip (63) extends outward from a first supporting area (21) on a side close to the second lead area (32).

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