laser

By incorporating a wavelength conversion component into the laser and using a light-emitting chip to excite fluorescence, the problem of low flexibility in the use of existing lasers is solved, enabling the application of lasers as multi-color light sources, simplifying the optical path structure, and reducing the size of the device.

CN115912043BActive Publication Date: 2025-11-18QINGDAO HISENSE LASER DISPLAY CO LTD
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Patent Information

Application Number
CN202310033081.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-01-10
Publication Date
2025-11-18
Estimated Expiration
2043-01-10

AI Technical Summary

Technical Problem

Existing lasers have limited flexibility in use, with the laser color determined solely by the light-emitting chip, limiting their application scenarios.

Method used

A wavelength conversion component is set on the inclined surface of the reflective component. The wavelength conversion component is excited by a light-emitting chip to emit fluorescence, and different colors of fluorescence are transmitted through the sealed cover, which enhances the flexibility of the laser.

Benefits of technology

Lasers can directly emit fluorescence, which improves the flexibility of use, enriches application scenarios, simplifies the optical path structure, and reduces the size of the device.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application discloses a laser, and belongs to the technical field of photoelectricity. The laser comprises a substrate, a first frame, a light-emitting chip, a reflecting component, a wavelength conversion component and a sealing cover; the substrate is fixed with the first frame; the light-emitting chip, the reflecting component and the wavelength conversion component are all located on the substrate and surrounded by the frame; the sealing cover is located on the side of the first frame away from the substrate; the reflecting component is located on the light-emitting side of the light-emitting chip; the reflecting component is in the shape of a prism; the surface of the reflecting component close to the light-emitting chip is an inclined surface, which faces the side away from the substrate; the wavelength conversion component is located on the inclined surface; the laser emitted by the light-emitting chip is directed to the wavelength conversion component; the wavelength conversion component is used for emitting fluorescent light to the sealing cover under the excitation of the laser; the sealing cover is used for transmitting the fluorescent light; the color of the fluorescent light is different from that of the laser. The application solves the problem of poor flexibility of the laser. The application is used for light emission.
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Description

Technical Field

[0001] This application relates to the field of optoelectronic technology, and in particular to a laser. Background Technology

[0002] With the development of optoelectronic technology, lasers are being widely used, and the requirements for lasers are becoming increasingly stringent.

[0003] In related technologies, a laser includes a base plate, a frame, a light-emitting chip, and a reflecting prism. The base plate and frame form a groove, and the light-emitting chip and the reflecting prism are located in the groove, with the reflecting prism positioned on the light-emitting side of the light-emitting chip. The light-emitting chip emits laser light towards the reflecting prism, which reflects the laser light away from the base plate, thus allowing the laser light to exit the groove and achieve laser light emission.

[0004] In related technologies, the color of the laser emitted by a laser is determined solely by the light-emitting chip, resulting in low flexibility in the use of lasers. Summary of the Invention

[0005] This application provides a laser that addresses the problem of poor flexibility in the use of lasers. The laser includes a substrate, a first frame, a light-emitting chip, a reflective component, a wavelength conversion component, and a sealing cover.

[0006] The substrate is fixed to the first frame, the light-emitting chip, the reflective component and the wavelength conversion component are all located on the substrate and surrounded by the frame, and the sealing cover is located on the side of the first frame away from the substrate;

[0007] The reflective component is located on the light-emitting side of the light-emitting chip; the reflective component is prismatic, and the surface of the reflective component near the light-emitting chip is an inclined surface, which faces away from the substrate; the wavelength conversion component is located on the inclined surface;

[0008] The laser emitted by the light-emitting chip is directed toward the wavelength conversion component, which emits fluorescence toward the sealing cover under the excitation of the laser. The sealing cover transmits the fluorescence, and the color of the fluorescence is different from the color of the laser.

[0009] The beneficial effects of the technical solution provided in this application include at least the following:

[0010] In the laser provided in this application, a wavelength conversion component can be disposed on an inclined surface near the light-emitting chip within the reflective component. The laser emitted by the light-emitting chip can excite the wavelength conversion component to emit fluorescence, which can then be directed towards and emitted from the sealing cover. Thus, the laser can emit fluorescence, and the emitted light is not solely determined by the light-emitting chip. This provides greater flexibility in the use of the laser, and it can be applied to scenarios requiring fluorescence, thereby enriching the application scenarios of lasers. Attached Figure Description

[0011] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0012] Figure 1 This is a schematic diagram of the structure of a laser provided in an embodiment of this application;

[0013] Figure 2 This is a schematic diagram of another laser structure provided in an embodiment of this application;

[0014] Figure 3 This is a schematic diagram of another laser structure provided in the embodiments of this application;

[0015] Figure 4 This is a schematic diagram of another laser structure provided in the embodiments of this application;

[0016] Figure 5 This is a schematic diagram of the structure of a laser provided in another embodiment of this application;

[0017] Figure 6 This is a schematic diagram of another laser provided in another embodiment of this application;

[0018] Figure 7 This is a schematic diagram of another laser provided in another embodiment of this application;

[0019] Figure 8 This is a schematic diagram of the structure of another laser provided in another embodiment of this application;

[0020] Figure 9 This is a schematic diagram of the structure of a laser provided in another embodiment of this application;

[0021] Figure 10 This is a partial structural schematic diagram of a laser provided in an embodiment of this application;

[0022] Figure 11This is a partial structural schematic diagram of another laser provided in an embodiment of this application;

[0023] Figure 12 This is a schematic diagram of another laser provided in another embodiment of this application;

[0024] Figure 13 This is a schematic diagram of the structure of another laser provided in another embodiment of this application;

[0025] Figure 14 This is a schematic diagram of the structure of yet another laser provided in another embodiment of this application;

[0026] Figure 15 This is a schematic diagram of the structure of a laser provided in another embodiment of this application;

[0027] Figure 16 This is a schematic diagram of another laser provided in another embodiment of this application;

[0028] Figure 17 This is a schematic diagram of the structure of yet another laser provided in another embodiment of this application;

[0029] Figure 18 This is a schematic diagram of another laser provided in another embodiment of this application;

[0030] Figure 19 This is a partial structural schematic diagram of another laser provided in the embodiments of this application. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0032] With the development of optoelectronic technology, lasers are being used more and more widely. For example, lasers can be used as a light source in laser projection equipment, and the laser light emitted by the laser can form a projected image with good display effect. Correspondingly, the requirements for the flexibility of laser use and miniaturization are also increasing.

[0033] The following embodiments of this application provide a laser that can easily and directly emit fluorescence. This laser has high flexibility in use, a wide range of application scenarios, and good fluorescence emission effect.

[0034] Figure 1 This is a schematic diagram of the structure of a laser provided in an embodiment of this application. Figure 2 This is a schematic diagram of another laser structure provided in an embodiment of this application. Figure 2 for Figure 1 The top view of the laser shown. Figure 1for Figure 2 The diagram shows a cross-sectional view of the laser. Figure 1 and Figure 2 As shown, the laser 10 includes: a substrate 101, a first frame 102, a light-emitting chip 104, a reflective component 108, a wavelength conversion component 105, and a sealing cover 106. It should be noted that... Figure 2 The sealing cap 106 is not shown in the diagram.

[0035] The substrate 101 is fixed to the first frame 102. The light-emitting chip 104, the reflective component 108, and the wavelength conversion component 105 are all located on the substrate 101 and surrounded by the first frame 102. The surrounding described in this embodiment can be semi-surrounding or full-surrounding. Figure 1 and Figure 2 Taking the example of the first frame 102 completely surrounding all the components on the substrate 101. For example... Figure 1 As shown, the substrate 101 and the first frame 102 form a groove. The substrate 101 forms the bottom of the groove, and the first frame 102 forms the groove wall. This groove is also a receiving space in which the light-emitting chip 104, the reflective component 108, and the wavelength conversion component 105 are all located. The structure formed by the substrate 101 and the first frame 102 can be called a housing.

[0036] The sealing cap 106 is located on the side of the first frame 102 away from the substrate 101. The sealing cap 106 is fixed to the surface of the first frame 102 away from the substrate 101, and is used to seal the groove enclosed by the substrate 101 and the first frame 102. The substrate 101, the first frame 102, and the sealing cap 106 can form an encapsulation structure for encapsulating the components in the groove. This can prevent external substances such as water and oxygen from corroding the components in the groove, ensuring the reliability of each component and extending the life of the laser. For example, solder (such as gold-tin solder) can be pre-placed on the bottom edge of the sealing cap 106, and the sealing cap can be fixed to the first frame 102 by high-temperature welding of the solder to seal the groove.

[0037] The sealing cover 106 is made of a light-transmitting material to allow light to escape from it. Optionally, the sealing cover 106 can be made of hard glass such as K9 glass, sapphire, or transparent ceramic. The sealing cover 106 can be attached to the side of the first frame 102 away from the substrate 101 by eutectic bonding or adhesive bonding. If eutectic bonding is used, solder can be pre-plated on the edge of the sealing cover 106. After the sealing cover 106 is placed on the surface of the first frame 102 away from the substrate 101, the solder is heated to melt it, thereby achieving the bonding between the sealing cover 106 and the first frame 102.

[0038] The light-emitting chip 104 is located on the substrate 101, and the orthographic projection of the light-emitting chip 104 can all be located on the substrate 101. The substrate 101 has good thermal conductivity, and the heat generated by the light-emitting chip 104 when emitting light is dissipated almost vertically downwards. Placing the light-emitting chip 104 on the substrate 101 allows the substrate 101 to better assist in heat dissipation of the light-emitting chip 104. Optionally, the material of the substrate 101 may include oxygen-free copper, or a composite material including diamond and copper (also known as diamond copper).

[0039] The reflective component 108 is located on the light-emitting side of the light-emitting chip 104, and the light-emitting chip 104 and the reflective component 108 are arranged sequentially along the light-emitting direction of the light-emitting chip 104 (e.g., the x-direction). The reflective component 108 can be prismatic, and the arrangement direction of the upper and lower bases of the prism (i.e., the height direction) can be perpendicular to the light-emitting direction of the light-emitting chip 104. The surface of the reflective component 108 near the target sidewall is an inclined surface, which faces the light-emitting chip 104 and the side away from the substrate 101. The angle between the inclined surface and the surface of the substrate 101 is an acute angle, such as 45 degrees. This inclined surface can serve as a light-reflecting surface.

[0040] A wavelength conversion component 105 is located between the light-emitting chip 104 and the reflective component 108, such as on the inclined surface of the reflective component 108. The wavelength conversion component 105 may be sheet-like or plate-like and attached to the inclined surface. Laser light emitted from the light-emitting chip 104 is directed towards the wavelength conversion component 105. After the laser light reaches the wavelength conversion component 105, it can excite the wavelength conversion component 105 to emit light with a wavelength different from the laser light, thereby achieving wavelength conversion of the laser light. In this embodiment, the wavelength conversion component 105 is formed of a fluorescent material, and the wavelength conversion component 105 can emit fluorescence under laser excitation, the color of which is different from the color of the laser light.

[0041] For example, the laser emitted by the light-emitting chip 104 can be a blue laser, and the fluorescence emitted by the wavelength conversion component 105 can be a yellow, green, or red laser. The colors of the laser and fluorescence can also be other colors, and this embodiment is not limited thereto. Optionally, the wavelength conversion component 105 is a yttrium aluminum garnet (YAG) phosphor.

[0042] The fluorescence emitted by the wavelength conversion component 105 can be directed towards the sealing cover 106 and transmitted out from the sealing cover 106, thus realizing the emission of light from the laser 10. For example, the inclined surface of the reflective component 108 is a reflective surface, or the surface of the wavelength conversion component 105 near the inclined surface is a reflective surface. Due to the effect of this reflective surface, the fluorescence is emitted in a direction away from the substrate 101 (such as the z-direction) and then directed towards the sealing cover 106. To make the inclined surface of the reflective component 108 a reflective surface, a reflective film can be deposited on the inclined surface to achieve the reflective effect of the inclined surface. This reflective film can be a reflective film for light across the entire wavelength range, or it can be a reflective film only for fluorescence. Optionally, the reflective film can cover the entire area of ​​the inclined surface, or it can only cover the area of ​​the inclined surface where the wavelength conversion component 105 is disposed.

[0043] Optionally, the area of ​​the wavelength conversion component 105 can be smaller than the area of ​​the inclined surface of the reflective component 108. In this way, the laser light is evenly irradiated onto the smaller wavelength conversion component 105, which helps to improve the fluorescence excitation effect of the wavelength conversion component 105 and avoids material waste.

[0044] In this embodiment, the laser 10 can utilize a wavelength conversion component 105 to convert the laser wavelength, enabling the laser 10 to emit fluorescence of a different color than the laser light, thus improving the flexibility of the laser 10. Furthermore, in related technologies, to obtain fluorescence, a light path shaping component is typically used to focus the blue laser light emitted by the laser onto a phosphor wheel to excite the phosphor wheel to emit fluorescence. This type of fluorescence excitation system requires numerous lenses and devices, resulting in a complex optical path and a large system size. In this embodiment, however, the wavelength conversion component 105 can be directly integrated into the laser 10, allowing the laser 10 to directly emit fluorescence without the need for additional lenses and devices. The fluorescence emission method is simpler, and the fluorescence-emitting device is smaller. Moreover, placing the wavelength conversion component 105 within the housing space of the laser 10 avoids contamination of the wavelength conversion component 105, ensuring its reliable operation.

[0045] In this embodiment, the laser 10 may further include a heat sink 107. Each heat sink 107 may correspond one-to-one with a light-emitting chip 104. Each light-emitting chip 104 is located on its corresponding heat sink 107, which has good thermal conductivity. Since the heat from the light-emitting chip 104 is transferred and dissipated vertically downwards, the heat sink 107 can effectively assist in heat dissipation for the corresponding light-emitting chip 104. The heat sink 107 can also assist in the electrical connection of the corresponding light-emitting chip 104.

[0046] The coefficient of thermal expansion of the heat sink 107 is close to that of the light-emitting chip 104, which can effectively alleviate the stress generated during material temperature changes. For example, the material of the heat sink 107 can include ceramic. The light-emitting chip 104 and the heat sink 107 can be formed by eutectic bonding. Both the top and bottom surfaces of the light-emitting chip 104 and the heat sink 107 can be gold-plated. Solder can be pre-placed on the mounting surfaces of the light-emitting chip 104 and the heat sink 107, and this solder is used to mount the light-emitting chip 104 and the heat sink 107.

[0047] In summary, the laser provided in this application embodiment can have a wavelength conversion component disposed on an inclined surface near the light-emitting chip within the reflective component. The laser emitted by the light-emitting chip can excite the wavelength conversion component to emit fluorescence, which can then be directed towards and emitted from the sealing cover. Thus, the laser can emit fluorescence, and the emitted light is not solely determined by the light-emitting chip. This provides greater flexibility in the laser's use, and the laser can be applied to scenarios requiring fluorescence, thereby enriching the application scenarios of lasers.

[0048] In the laser 10, the substrate 101 is generally plate-shaped, having two relatively large, opposing surfaces and multiple smaller sidewalls connecting them. The two surfaces can be parallel. The first frame 102 is a frame-shaped structure, which may have at least multiple sequentially connected sidewalls. The substrate 101 and the first frame 102 can be fixed in various ways, and the structure of the first frame 102, as well as the structures of other components, can differ depending on the fixing method.

[0049] For the first optional implementation, please refer to [link / reference]. Figure 1 and Figure 2 The first frame 102 may include an annular plate 1021 and a plurality of sidewalls 1022 fixed to the annular plate 1021 and sequentially connected, the plurality of sidewalls 1022 enclosing an accommodating space. The annular plate 1021 and the sidewalls 1022 are integrally formed. For ease of distinction, the annular plate 1021 and the sidewalls 1022 are represented by different filling methods in the accompanying drawings. For example, the plurality of sidewalls 1022 may be located on the annular plate 1021. The annular plate 1021 of the first frame 102 may surround the substrate 101, and the inner annular surface of the annular plate 1021 is fixed to the side surface of the substrate 101.

[0050] For example, the first frame 102 is generally rectangular in shape and may have four sides, including four sidewalls 1022 connected in sequence, and the annular plate 1021 is square-ring shaped. The substrate 101 is rectangular and includes four sides. The first frame 102 can be made of ceramic, such as alumina. Since the coefficients of thermal expansion of alumina and diamond copper are relatively similar, the substrate 101 and the first frame 102 can be bonded by brazing, ensuring a good bonding effect.

[0051] A conductive structure may be provided in the annular plate 1021. This conductive structure connects the inside and outside of the area enclosed by the first frame 102, and also connects the inside and outside of the accommodating space enclosed by the substrate 101 and the first frame 102. The light-emitting chip 104 can be electrically connected to one end of the conductive structure located within the area enclosed by the first frame 102. The other end of the conductive structure located outside the area enclosed by the first frame 102 can be electrically connected to an external circuit. In this way, current can be transmitted to the light-emitting chip 104 through the conductive structure to excite the light-emitting chip 104 to emit laser light.

[0052] The positive and negative terminals of the light-emitting chip 104 need to be connected to two conductive structures respectively. The ends of these two conductive structures located outside the enclosure area of ​​the first frame 102 are respectively connected to the positive and negative terminals of an external circuit. Please refer to [further details omitted]. Figure 2 The annular plate 1021 has two conductive structures X located at its center. Figure 2 Only the exposed portions of the two conductive structures X located outside the enclosed area of ​​the first frame 102 are illustrated. The two conductive structures, located at one end within the enclosed area of ​​the first frame 102, can both be located on the side of the light-emitting chip 104 away from the reflective component 108, or they can be located on opposite sides of the light-emitting chip 104 in the y-direction.

[0053] Optionally, the material of the first frame 102 may include ceramic, such as alumina or aluminum nitride. If the material of the annular plate 1021 is ceramic, the conductive structure can be embedded within the annular plate 1021 during its fabrication. The material of the sidewall 1022 in the first frame 102 may be the same as that of the annular plate 1021. Optionally, the conductive structure may also be disposed in the sidewall 1022 near the light-emitting chip 104.

[0054] In the second alternative implementation, the first frame 102 does not include the annular plate 1021, but only includes multiple sidewalls 1022. This first frame 102 can be located on the substrate 101, with one end face of the first frame 102 fixed to the surface of the substrate 101 in the axial direction. This method is equivalent to... Figure 1 The annular plate 1021 in the first frame 102 is also configured as a substrate 101. Optionally, the plurality of sidewalls 1022 in the first frame 102 may also directly surround the substrate 101, and the inner wall surface of each sidewall 1022 may be fixed to the side surface of the substrate 101. This embodiment of the application does not illustrate the laser 10 under this optional configuration.

[0055] In both of the above-mentioned optional implementations, the reflective component 108 and the substrate 101 can be independent of each other. When assembling the laser 10, the reflective component 108 needs to be mounted on the substrate 101. Optionally, the reflective component 108 can be a reflective prism, and its substrate can be glass or silicon.

[0056] In the third alternative implementation, Figure 3 This is a schematic diagram of another laser structure provided in an embodiment of this application. For example... Figure 3 As shown, the substrate 101 and the reflective member 108 are integrally formed, and the reflective member 108 is located on the edge of the substrate 101 on the light-emitting side of the light-emitting chip 104. The substrate 101 may be rectangular and have four edges. The reflective member 108 may be located at one of these four edges. The reflective member 108 may be strip-shaped, and its length may be the same as the length of the edge, and the reflective member 108 may cover the entire position of the edge. Optionally, the surface of the reflective member 108 away from the light-emitting chip 104 is aligned with the one edge of the substrate 101.

[0057] In this implementation, the reflective component 108 is made of the same material as the substrate 101. The material of the reflective component 108 can include a composite material of diamond and copper, or oxygen-free copper. This results in good thermal conductivity for the reflective component 108. When the wavelength conversion component 105 is excited to emit fluorescence, it generates heat, which can be conducted to the substrate 101 via the reflective component 108, achieving rapid heat dissipation and ensuring good fluorescence excitation of the wavelength conversion component 105. Furthermore, there may be no fixed interface between the reflective component 108 and the substrate 101; heat transfer between them is not hindered by the interface, resulting in rapid heat dissipation.

[0058] In this implementation, the first frame 102 can completely surround the substrate 101 and the reflective component 108, such that the structure of the first frame 102 can be... Figure 1 The structure of the first frame 102 is the same, and will not be illustrated further in this embodiment.

[0059] Optionally, the first frame 102 may partially surround the light-emitting chip 104, the reflective component 108, and the wavelength conversion component 105. Figure 4 This is a schematic diagram of another laser structure provided in the embodiments of this application. Figure 4 It can be Figure 3 A top view of the laser shown. Figure 4As shown, the first frame 102 includes a first sidewall D1, a second sidewall D2, and a third sidewall D3 connected in sequence. The second sidewall D2 is opposite to the reflective component 108, and the first sidewall D1 and the third sidewall D3 are respectively fixed to two sides of the reflective component 108 located on opposite sides of the inclined surface, such as two sides of the reflective component 108 opposite in the y-direction. Specifically, the ends of the first sidewall D1 and the third sidewall D3 away from the second sidewall D2 are fixed to the two sides, and a portion of the inner wall surface of the first sidewall D1 and the third sidewall D3 away from the second sidewall D2 is fixed to the two sides. The inner walls of the first sidewall D1, the second sidewall D2, and the third sidewall D3 are also respectively fixed to three sides of the substrate 101. In this type of laser 10, the substrate 101, the first frame 102, and the reflective component 108 together enclose the accommodating space of the laser 10.

[0060] In this implementation, a portion of the edge area of ​​the sealing cover 106 can be fixed to the surfaces of the first sidewall D1, the second sidewall D2, and the third sidewall D3, and a portion of the edge area is fixed to the surface of the reflective component 108 away from the substrate 101.

[0061] exist Figure 3 and Figure 4 Based on the laser 10 shown, Figure 5 This is a schematic diagram of the structure of a laser according to another embodiment of this application. Figure 6 This is a schematic diagram of another laser structure provided in another embodiment of this application. Figure 6 It can be Figure 5 A top view of the laser 10 shown. Figure 5 and Figure 6 As shown, the first frame 102 also includes a strip-shaped portion T, which connects the first sidewall D1 and the third sidewall D3, and is fixed to the surface of the reflective component 108 away from the substrate 101. Specifically, the surface of the strip-shaped portion T near the reflective component 108 is fixed to the surface of the reflective component 108 away from the substrate 101. The surface of the strip-shaped portion T away from the reflective component 108 can form a flat annular surface with the surfaces of the first sidewall D1, the second sidewall D2, and the third sidewall D3 away from the substrate 101, thus ensuring a high degree of flatness of the annular surface. The sealing cap 106 is fixed to this annular surface, ensuring a good sealing effect at the contact point between the sealing cap 106 and the annular surface.

[0062] exist Figure 5 and Figure 6 On this basis, Figure 7 This is a schematic diagram of another laser structure provided in another embodiment of this application. Figure 8 This is a schematic diagram of another laser provided in another embodiment of this application. Figure 8 It can be Figure 7 A top view of the laser 10 shown. Figure 7 and Figure 8 As shown, the first frame 102 also includes a plate-shaped portion Z, and a second sidewall D2 is located on the plate-shaped portion Z. The bottom surfaces of the first sidewall D1 and the third sidewall D3 can be flush with the bottom surface of the plate-shaped portion Z. The target side of the substrate 101 near the second sidewall D2 is fixed to the side surface of the plate-shaped portion Z, and the two sides of the substrate 101 connected to the target side are respectively fixed to the first sidewall D1 and the third sidewall D3. Optionally, it is also possible to... Figure 3 and Figure 4 Based on this, the first frame 102 also includes a plate-shaped portion Z, which will not be illustrated in this embodiment.

[0063] The plate-shaped part Z may be provided with a conductive structure X that connects the inside and outside of the enclosing area of ​​the first frame 102, and the light-emitting chip 104 is electrically connected to one end of the conductive structure X located in the enclosing area of ​​the first frame 102. Figure 8 Only the portion of the conductive structure X located outside the enclosed area of ​​the first frame 102 and exposed is illustrated. This facilitates the circuit connection of the light-emitting chip 104. For details on this circuit structure X, please refer to the description of the circuit structure in the annular plate 1021 in the first alternative implementation.

[0064] Based on any of the lasers 10 described above, the laser 10 may further include a packaging structure located on the substrate 101 and surrounded by a second frame 102, which is used to seal the light-emitting chip 104. For example, in... Figure 7 On this basis, Figure 9 This is a schematic diagram of the structure of a laser provided in another embodiment of this application. For example... Figure 9 As shown, the encapsulation structure 103 forms a sealed space in which the light-emitting chip 104 is located. The encapsulation structure 103 has a light-emitting target sidewall B located on the light-emitting side of the light-emitting chip 104 and is transparent to light. The light-emitting chip 104 emits laser light towards the target sidewall B, and the laser light passes through the target sidewall B and exits the encapsulation structure 103.

[0065] The packaging structure 103 in the laser 10 is used to seal the light-emitting chip 104. The packaging structure 103 can independently create a sealed space or jointly create a sealed space with other components. There are several possible implementations of the packaging structure 103. The following describes three of these implementations as examples.

[0066] In the first optional implementation of the encapsulation structure 103, such as Figure 9 As shown, the packaging structure 103 forms a sealed space for accommodating the light-emitting chip 104. Figure 10 This is a partial structural diagram of a laser provided in an embodiment of this application. The structure includes a packaging structure 103 and a light-emitting chip 104. Figure 10 What is shown can be Figure 9 Partial structure of the laser 10 shown. Please refer to... Figure 9 and Figure 10 The packaging structure 103 may include a base plate 1031, a second frame 1032, and a top cover 1033. The base plate 1031, the second frame 1032, and the top cover 1033 form a sealed space for sealing the light-emitting chip 104.

[0067] Both the base plate 1031 and the top cover 1033 are generally plate-shaped, while the second frame 1032 has a frame-like structure. The base plate 1031 is fixed to the second frame 1032, the light-emitting chip 104 is located on the base plate 1031 and surrounded by the second frame 1032, and the top cover 1033 is fixed to the side of the second frame 1032 away from the base plate 1031. All components in the encapsulation structure 103 can be fixed with sealant. For example, the second frame 1032 can be square-shaped, and the second frame 1032 is surrounded by four side walls, the enclosed area of ​​which is approximately rectangular.

[0068] The second frame 1032 includes a target sidewall B and other sidewalls connected to the target sidewall B (not shown in the figure). The target sidewall B in the second frame 1032 is located on the light-emitting side of the light-emitting chip 104. The target sidewall B needs to be translucent, and its material can include glass, sapphire, quartz, or transparent ceramic, etc. Figure 10 As shown, the light-emitting chip 104 can emit laser light along the x-direction, and the laser light can pass through the target sidewall B of the packaging structure 103 and exit.

[0069] In a first optional implementation of the second frame 1032, the target sidewall B is an integral structure with the other sidewalls, and the shape and structure of the target sidewall B and its opposite sidewall can be completely identical. The material of the other sidewalls in the second frame 1032 can be the same as the material of the target sidewall B.

[0070] In a second alternative implementation of the second frame 1032, the second frame 1032 may include a frame-shaped portion and a light-transmitting sealing portion. The frame-shaped portion may have four sides and includes at least three sidewalls connected in sequence, with the enclosed area of ​​each sidewall being approximately rectangular. The other side of the frame-shaped portion (e.g., referred to as the target side) has an opening, and the light-transmitting sealing portion is fixed to the target side and covers the opening, thus forming the second frame 1032. The target sidewall of the second frame 1032 includes the light-transmitting sealing portion.

[0071] For example, the target side of the frame-shaped portion may not have any structure; the frame-shaped portion consists only of three sidewalls, and the two side edges of the light-transmitting sealing portion are fixed to the end faces of the two opposite sidewalls in the frame-shaped portion, respectively. As another example, the target side of the frame-shaped portion may have a frame that encloses the opening on the target side, and the four edges of the light-transmitting sealing portion are fixed to the frame. As yet another example, the target side of the frame-shaped portion may have an auxiliary structure connecting the ends of the two opposite sidewalls away from the base plate 1031; this auxiliary structure, together with the ends of the two sidewalls and the base plate 1031, encloses the opening on the target side, and the four edges of the light-transmitting sealing portion are fixed to the auxiliary structure, the ends of the two sidewalls, and the side surface of the base plate 1031.

[0072] In the second optional implementation of the second frame 1032 described above, the materials of the frame-shaped portion and the light-transmitting sealing portion may be different. The frame-shaped portion may be made of an opaque material. For example, the material of the frame-shaped portion may include metal or ceramic. Alternatively, the frame-shaped portion may also be made of a light-transmitting material, and the material of the frame-shaped portion may be the same as the material of the light-transmitting sealing portion; this application embodiment does not limit this. The material of the light-transmitting sealing portion may refer to the material of the target sidewall described above.

[0073] In the encapsulation structure 103, the base plate 1031, the second frame 1032, and the top cover 1033 can be three independent components. Optionally, the base plate 1031 or the top cover 1033 can be integrally formed with the second frame 1032. For the second frame 1032 in the first optional implementation described above, the top cover 1033 can be integrally formed with the second frame 1032. For the second frame 1032 in the second optional implementation described above, the base plate 1031 or the top cover 1033 can be integrally formed with the frame-shaped portion in the second frame 1032, and the top cover 1033 can also be integrally formed with the light-transmitting sealing portion in the second frame 1032. Optionally, when the base plate 1031 is integrally formed with the frame-shaped portion, both the base plate 1031 and the frame-shaped portion can be made of ceramic.

[0074] Optionally, all surfaces of the encapsulation structure 103 except the target sidewall can be coated with a light-absorbing material. This can absorb stray light mixed in with the encapsulation structure, preventing the stray light from mixing into the laser emitted by the light-emitting chip 104 and affecting the light output effect of the laser 10.

[0075] In this encapsulation structure 103, a conductive structure connecting the inside and outside of the sealed space can be provided in the base plate 1031 or the second frame 1032. In this embodiment, to distinguish it from the conductive structure in the first frame 102, the conductive structure in the first frame 102 is referred to as the first conductive structure, and the conductive structure in the encapsulation structure 103 is referred to as the second conductive structure. The positive and negative electrodes of the light-emitting chip 104 need to be connected to two second conductive structures respectively. Both second conductive structures can be located on the side of the light-emitting chip 104 away from the target sidewall B. Optionally, a soldering station can also be provided on the base plate 1031, with a portion of the second conductive structure embedded in the soldering station. The soldering station can assist in the electrical connection of the light-emitting chip 104. For example, the electrodes of the light-emitting chip 104 can be connected to the soldering station via wires, and then electrically connected to the first conductive structure through the soldering station.

[0076] Optionally, Figure 11 This is a partial structural schematic diagram of another laser provided in an embodiment of this application. Figure 11 Only the packaging structure 103 and the light-emitting chip 104 are shown in the diagram. Figure 11 It can be Figure 10 A top view of the structure shown. (e.g.) Figure 11 As shown, the two second conductive structures J in the packaging structure 103 are located on both sides of the light-emitting chip 104 in the y-direction. For example, the upper surface of the light-emitting chip 104 can be used as the negative electrode, and the upper surface of the heat sink 107 can be used as the positive electrode.

[0077] In the assembly process of the laser 10 with the packaging structure 103 in the first optional implementation, the second frame 1032 can be fixed to the base plate 1031 first, and then the light-emitting chip 104 can be mounted on the base plate 1031. After the light-emitting chip 104 is mounted on the base plate 1031, the electrodes of the light-emitting chip 104 can be connected to one end of the second conductive structure located in the sealed space, so that the light-emitting chip 104 is connected to the outside of the sealed space enclosed by the packaging structure 103. Then, the top cover 1033 is fixed to the side of the second frame 1032 away from the base plate 1031 to seal the light-emitting chip 104. After that, the packaging structure 103 with the light-emitting chip 104 mounted can be fixed to the substrate 101, and the end of the second conductive structure located outside the sealed space can be connected to the end of the first conductive structure located in the accommodating space to ensure power supply to the light-emitting chip 104.

[0078] Next, power is supplied to the light-emitting chip 104 to illuminate it. The mounting position of the component that the laser needs to pass through is adjusted according to the illumination of the laser emitted by the light-emitting chip 104. Then, the component is mounted after the appropriate mounting position is determined. For example, for the mounting of the wavelength conversion component 105, a target can be placed at the location where the wavelength conversion component 105 needs to be placed. The position of the target is adjusted according to the illumination of the target by the laser emitted by the light-emitting chip 104. When the illumination of the laser on the target matches the illumination required on the wavelength conversion component 105, the position of the target is determined as the mounting position of the wavelength conversion component 105. Then, the target is removed and the wavelength conversion component 105 is placed at the position.

[0079] In this application, the light-emitting chip 104 is described as being disposed on the heat sink 107. Optionally, when the packaging structure 103 has a base plate 1031 and the base plate 1031 is made of ceramic, the light-emitting chip 104 can also be directly disposed on the base plate 1031 without the heat sink 107.

[0080] In a second alternative implementation of the packaging structure 103, the packaging structure 103 and the substrate 101 together form a sealed space for accommodating the light-emitting chip 104.

[0081] Figure 12 This is a schematic diagram of another laser structure provided in a further embodiment of this application. For example... Figure 12 As shown, the encapsulation structure 103 may include a second frame 1032 and a top cover 1033. The end face of the second frame 1032 near the substrate 101 is fixed to the substrate 101. The substrate 101, the second frame 1032, and the top cover 1033 form a sealed space for sealing the light-emitting chip 104. This optional implementation is equivalent to omitting the bottom plate 1031 in the encapsulation structure 103 based on the first optional implementation, and directly placing the light-emitting chip 104 on the substrate 101. Regarding the encapsulation structure 103 in this optional implementation, please refer to the relevant description of the second frame 1032 and the top cover 1033 in the first optional implementation described above. This application embodiment will not repeat the description.

[0082] In the second optional implementation, where the packaging structure 103 is located in the laser 10, there is no need for a base plate 1031 between the light-emitting chip 104 and the substrate 101. The heat generated by the light-emitting chip 104 can be directly transferred to the substrate 101 and then dissipated to the outside through the substrate 101. This shortens the heat dissipation path and improves the heat dissipation effect of the laser 10.

[0083] In the laser 10 containing this encapsulation structure 103, a second conductive structure may be provided in the second frame 1032. One end of the second conductive structure located within the enclosed area of ​​the second frame 1032 is connected to the light-emitting chip 104, and the other end located outside the enclosed area is connected to the first conductive structure. Alternatively, the encapsulation structure 103 may cover a portion of the plate-shaped portion Z of the first frame 102, with one end of the first conductive structure in the plate-shaped portion Z located within the enclosed space of the encapsulation structure 103. The light-emitting chip 104 may be directly connected to the first conductive structure to connect to an external circuit.

[0084] In the assembly process of the laser 10 containing the packaging structure 103 of the second optional implementation, the light-emitting chip 104 can be first mounted on the substrate 101, and the electrodes of the light-emitting chip 104 can be electrically connected to the second conductive structure or the first conductive structure. Next, an adhesive (such as silver paste or other glue) is placed around the light-emitting chip 104, and then the second frame 1032 is fixed to the substrate 101 by the adhesive and surrounds the light-emitting chip 104. Finally, the top cover 1033 is fixed to the second frame 1032 to seal the light-emitting chip 104.

[0085] In a third alternative implementation of the packaging structure 103, the packaging structure 103, together with the substrate 101 and the first frame 102, forms a sealed space for accommodating the light-emitting chip 104. The packaging structure 103 can be fixed to three sidewalls in the first frame 102 to form a sealed space together with the three sidewalls.

[0086] Figure 13 This is a schematic diagram of another laser provided in another embodiment of this application. (See diagram below.) Figure 13 As shown, the light-emitting chip 104 is located on the substrate 101. The encapsulation structure 103 is L-shaped and includes a target sidewall B and a top cover G. One end of the target sidewall B in the z-direction is fixed to the substrate 101, and the top cover G is connected to the end of the target sidewall B away from the substrate 101, such that the top cover G is located on the side of the light-emitting chip 104 away from the substrate 101. The other edges of the encapsulation structure 103 are fixed to the sidewalls of the first frame 102. The end face of the top cover G away from the target sidewall B is fixed to the second sidewall D2 in the first frame 102, and the two end faces of the top cover G and the target sidewall B in the y-direction are fixed to the first sidewall D1 and the third sidewall D3, respectively. The sealed space where the light-emitting chip 104 is located is enclosed by the encapsulation structure 103, the first sidewall D1, the second sidewall D2, the third sidewall D3, and the substrate 101.

[0087] Figure 14 This is a schematic diagram of another laser provided in a further embodiment of this application. For example... Figure 14As shown, the second sidewall D2 of the first frame 102 has a sealing step (not shown) protruding into the enclosing area of ​​the first frame 102. The surface of the upper cover G of the encapsulation structure 103 near the substrate 101 is fixed to the sealing step; for example, the area of ​​the surface of the upper cover G near the substrate 101 away from the target sidewall B is fixed to the surface of the sealing step away from the substrate 101. The sealing step T can be strip-shaped, with its two ends contacting the first sidewall D1 and the third sidewall D3 in the y-direction, respectively. In this embodiment, the sealing step is located at one end of the second sidewall D2 near the plate-like portion Z, and the bottom of the sealing step is fixed to the plate-like portion Z. Optionally, a gap may also exist between the sealing step T and the plate-like portion Z.

[0088] In this encapsulation structure 103, the target sidewall B and the top cover G can be integrally formed, and the target sidewall B and the top cover G can be made of the same material. For example, the material can include glass, sapphire, or other light-transmitting materials. Optionally, the encapsulation structure 103 can be formed using a molding process. Optionally, the encapsulation structure 103 can be fixed to the substrate 101 and the first frame 102 using UV adhesive or thermosetting adhesive.

[0089] In the laser 10 where the packaging structure 103 is located, the light-emitting chip 104 is directly connected to the external circuit through the first conductive structure in the plate-shaped part Z to realize the current transmission to the light-emitting chip 104.

[0090] Optionally, the laser 10 may further include a welding station, which may be located together with the light-emitting chip 104 within the sealed space formed by the packaging structure 103. For example, the welding station may be located between the light-emitting chip 104 and the sealing step T. The welding station is electrically connected to a first conductive structure, and the welding station assists in the electrical connection between the light-emitting chip 104 and the conductive structure. For example, the electrodes of the light-emitting chip 104 may be connected to the welding station via wires, and thus electrically connected to the first conductive structure via the welding station.

[0091] In this embodiment, the encapsulation structure 103 and the sealing cover 106 can together form the overall encapsulation structure of the laser 10. After the encapsulation structure 103 encapsulates the light-emitting chip 104 once, the sealing cover 106, combined with the substrate 101 and the first frame 102, can achieve secondary encapsulation of the light-emitting chip 104, as well as encapsulation of the encapsulation structure 103, the wavelength conversion component 105, and the reflective component 108. When assembling the laser 10, the light-emitting chip 104 can be encapsulated in the accommodating space of the laser 10 first through the encapsulation structure 103, then the wavelength conversion component 105 can be attached, and then the sealing cover 106 can be fixed on the side of the first frame 102 away from the substrate 101.

[0092] The relevant technology requires that the airtightness level of the sealed container reach 10. -8 Pa cubic meters per second (pa*m)3 The airtightness requirement is high, and the requirements for the packaging process and packaging materials are also high, making the packaging of the space accommodating the laser 00 difficult. However, in the embodiment of this application, the airtightness level of the sealed space formed by the packaging structure 103 can reach 10. -5 The airtightness level is measured in cubic meters per second (Pa), which is relatively low compared to the airtightness level of the accommodating space in related technologies. Next, the accommodating space enclosed by the substrate 101 and the first frame 102 needs to be re-encapsulated with a sealing cap 106. The airtightness level of this second encapsulation can also be relatively low compared to the airtightness level of the accommodating space in related technologies; for example, a sealing adhesive with moderate airtightness can be used to fix the sealing cap 106. The encapsulation of this sealed space and the encapsulation of the accommodating space together ensure that the environment in which the light-emitting chip 104 is located meets the airtightness requirements. In this way, while meeting the airtightness requirements of the laser 10, the requirements for the encapsulation process are reduced, and the encapsulation difficulty is lowered.

[0093] During the mounting process of the wavelength conversion component 105, the light-emitting chip 104 can be illuminated. Since the packaging structure 103 seals the light-emitting chip 104, illuminating the chip 104 will not cause damage to it from external contaminants, thus ensuring its operational reliability. After illuminating the chip 104, the wavelength conversion component 105 can be positioned appropriately based on the laser irradiation conditions emitted by the chip 104 (such as the laser's irradiation position, and the size and shape of the formed light spot), ensuring a good excitation effect of the laser on the wavelength conversion component 105. If the laser 10 contains other components that the laser needs to pass through (such as a reflecting prism or collimating lens), the mounting position of these other components can also be determined based on the laser irradiation conditions. This achieves active adjustment of the components in the laser 10 that require laser irradiation, ensuring high mounting accuracy and that the laser 10's emission conditions meet requirements, resulting in a better emission effect.

[0094] In related technologies, all components in the laser are passively mounted. For example, the light-emitting chip and the target component through which the laser beam passes are directly mounted at predetermined positions within the laser's accommodating space. During the mounting process, the positions of the light-emitting chip and the target component are only fine-tuned based on a set distance. After the components in the accommodating space are mounted, the space is sealed with a cap. Then, the light-emitting chip can be lit to confirm the laser's light output effect.

[0095] In this mounting method, after the LED is lit, the mounting of the target component is confirmed by observing the laser's illumination on the target component and its subsequent path. If the laser's illumination on the target component differs significantly from the required illumination, or if the laser's path after passing through the target component differs significantly from the required path, then the mounting of the target component is considered unsatisfactory, indicating a discrepancy between the relative positions of the LED and the target component and the predetermined positions. However, since the laser is already encapsulated, readjusting the mounting position of the target component is difficult and complex. If the target component is not remounted, the laser emitted by the laser may not be effectively utilized, and subsequent assembly with other components will be more difficult.

[0096] In this embodiment, the light-emitting chip 104 can be illuminated. Based on the illumination of the laser emitted by the light-emitting chip 104, the mounting position of the component that the laser in the laser 10 needs to pass through can be actively adjusted. This ensures that the illumination of the component by the laser emitted by the light-emitting chip 104 meets the requirements, the mounting accuracy of the component is high, and the light emitted after passing through the component also meets the requirements, without the need to remount the component after packaging. Furthermore, this ensures that the beam quality and the shape of the fluorescent spot emitted by the laser 10 meet the requirements, thus ensuring a good luminous effect of the laser 10.

[0097] In the embodiments described above, the sealed space formed by the packaging structure 103 of the laser 10 is used to house only one light-emitting chip 104. Optionally, the sealed space formed by the packaging structure 103 can also be used to house multiple light-emitting chips 104. The laser emitted by these multiple light-emitting chips 104 can all be directed towards the same wavelength conversion component 105. This can improve the fluorescence extraction efficiency of the laser 10.

[0098] For example, the lasers emitted by the multiple light-emitting chips 104 can be directed towards the same area in the wavelength conversion component 105, exciting that area to emit fluorescence. In this case, the emission directions of the multiple light-emitting chips 104 can intersect at the wavelength conversion component 105. Alternatively, the lasers emitted by the multiple light-emitting chips 104 can be directed towards different areas in the wavelength conversion component 105, with each light-emitting chip 104 exciting a different area to emit fluorescence. The multiple light-emitting chips 104 can also be arranged in a row, with all their emission directions parallel.

[0099] In this embodiment, the laser 10 may include only one encapsulation structure 103. Optionally, the laser 10 may also include multiple encapsulation structures 103. In this case, the laser 10 may include multiple light-emitting chips 104 corresponding one-to-one with the multiple encapsulation structures 103. Each light-emitting chip 104 may be located in a sealed space enclosed by the corresponding encapsulation structure 103. The multiple light-emitting chips 104 are all used to emit laser light to the wavelength conversion component 105. The laser light emitted by the multiple light-emitting chips 104 is directed towards the same area in the wavelength conversion component 105, such as the laser light emitted by the multiple light-emitting chips 104 all directed towards the central area of ​​the wavelength conversion component 105, or they may all cover the entire area of ​​the wavelength conversion component 105. This can ensure that the laser spot of each light-emitting chip 104 has a high consistency and a high fluorescence excitation effect on the wavelength conversion component 105.

[0100] For example, the multiple encapsulation structures 103 can be positioned symmetrically about a target axis within the housing space of the laser 101. This target axis is a straight line passing through the center of the wavelength conversion component 105 and parallel to the surface of the substrate 101. This ensures that the energy received by the laser irradiation at various locations on the wavelength conversion component 105 is relatively uniform, thus ensuring good fluorescence excitation of the wavelength conversion component 105. The wavelength conversion component 105 is sheet-like or plate-like, having two parallel and large surfaces, with the target axis passing through the center of these surfaces in the wavelength conversion component 105.

[0101] Figure 15 This is a schematic diagram of the structure of a laser provided in another embodiment of this application. Figure 15 The following diagram illustrates a laser 10 comprising two corresponding package structures 103 and two light-emitting chips 104. Figure 15 As shown, both packaging structures 103 can be tilted on the substrate 101, and the positions of the two packaging structures 103 are symmetrical about the target axis h.

[0102] In this embodiment, to ensure the fluorescence excitation effect of the wavelength conversion component 105, the energy distribution of the laser on the wavelength conversion component 105 needs to be relatively concentrated, and the laser emitted by the light-emitting chip 104 has a certain divergence angle. Therefore, a collimation component can also be provided in the laser 10 to collimate the laser. Collimating the laser is to limit the divergence angle of the laser, making the laser close to parallel light. This ensures that the energy of the laser is relatively concentrated and avoids the laser spot being too large, thus facilitating laser transmission.

[0103] For example, based on any of the lasers 10 described above, the laser 10 may further include a collimating lens located in the optical path after the light-emitting chip 104. As in Figure 7 On this basis, Figure 16This is a schematic diagram of another laser structure provided in another embodiment of this application; in Figure 12 On this basis, Figure 17 This is a schematic diagram of the structure of yet another laser provided in another embodiment of this application. For example... Figure 16 and Figure 17 As shown, the laser 10 also includes a collimating lens 109, which is located between the light-emitting chip 104 and the wavelength conversion component 105. The laser emitted by the light-emitting chip 104 is directed towards the collimating lens 109, which collimates the received laser before emitting it. The laser directed towards the wavelength conversion component 105 is the collimated laser. Figure 17 The collimating lens 109 is located on the side of the target sidewall B on the substrate 101 that is away from the light-emitting chip 104. The laser emitted from the packaging structure 103 is directed toward the collimating lens 109.

[0104] The embodiments described herein are merely examples of... Figure 7 and Figure 12 The example shown is based on a laser 10 with a collimating lens 109. The method of setting the collimating lens 109 in other optional laser 10 structures can be deduced by analogy. The embodiments of this application will not be illustrated in detail.

[0105] When the laser 10 includes multiple light-emitting chips 104, the number of collimating lenses 109 is the same as the number of light-emitting chips 104. Each light-emitting chip 104 corresponds to one collimating lens 109, and the laser emitted by each light-emitting chip 104 is collimated by the corresponding collimating lens 109.

[0106] In this example of laser 10, the mounting position of the collimating lens 109 can also be actively adjusted. During the mounting process of the collimating lens 109, the mounting position of the collimating lens 109 can be determined based on whether the shape and size of the light spot formed after the laser emitted from the light-emitting chip 104 passes through the collimating lens 109 meets the requirements. This ensures that the shape and size of the light spot formed by the collimated laser after mounting by the collimating lens 109 meet the requirements, thereby improving the light output quality of the laser 10.

[0107] As another example, based on any laser 10 including the encapsulation structure 103 described above, the target sidewall B of the encapsulation structure 103 can be designed to act as a collimating component, collimating the laser as it passes through the target sidewall B. For example, the target sidewall B of the encapsulation structure 103 can have a convex arc surface protruding into or out of the sealed space enclosed by the encapsulation structure 103, so as to further collimate the received laser before emission. In this example, since the laser is collimated by the target sidewall B, there is no need to set up an additional collimating lens, which can reduce the size of the laser 10 and is beneficial to the miniaturization of the laser 10.

[0108] As in Figure 12 On this basis, Figure 18 This is a schematic diagram of another laser provided in another embodiment of this application. (See diagram below.) Figure 18 As shown, the surface of the target sidewall B furthest from the light-emitting chip 104 can be a convex arc surface. The laser emitted by the light-emitting chip 104 can be collimated after passing through the convex arc surface of the target sidewall B. Optionally, the surface of the target sidewall B closest to the light-emitting chip 104 can also be a convex arc surface; this embodiment of the application does not illustrate this method.

[0109] In this example, the heat sink 107 may have a limiting protrusion at the end near the target sidewall B. This limiting protrusion is located outside the area where the light-emitting chip 104 is installed. The limiting protrusion abuts against the target sidewall B to ensure that the distance between the light-emitting chip 104 and the target sidewall B meets the requirements, thus ensuring good collimation of the laser emitted by the light-emitting chip 104 by the convex surface of the target sidewall B. Optionally, the number of these limiting protrusions can be one, two, or other numbers; this embodiment does not limit the specific number.

[0110] Figure 19 This is a partial structural schematic diagram of another laser provided in an embodiment of this application. Figure 19 Only the light-emitting chip 104, heat sink 107, and target sidewall B in the packaging structure 103 of the laser 10 are illustrated. Figure 19 As shown, the heat sink 107 may have two limiting protrusions W at the end near the target sidewall B. These limiting protrusions W are located outside the mounting area of ​​the light-emitting chip 104 to avoid obstructing the laser emitted by the light-emitting chip 104. For example, the two limiting protrusions W may be located on either side of the light-emitting chip 104. The protruding distance of the two limiting protrusions W can be the sum of the optimal distance between the light-emitting chip 104 and the target sidewall B, and the distance the light-emitting chip 104 extends beyond the heat sink 107. Thus, when mounting the heat sink 104, the limiting protrusions W can be directly abutted against the target sidewall B, ensuring good collimation of the laser by the target sidewall B.

[0111] Optionally, in this embodiment of the application, a converging mirror may be provided outside the housing space of the laser 10 to converge the fluorescence emitted by the laser 10 for subsequent use.

[0112] In summary, the laser provided in this application embodiment can have a wavelength conversion component disposed on an inclined surface near the light-emitting chip within the reflective component. The laser emitted by the light-emitting chip can excite the wavelength conversion component to emit fluorescence, which can then be directed towards and emitted from the sealing cover. Thus, the laser can emit fluorescence, and the emitted light is not solely determined by the light-emitting chip. This provides greater flexibility in the laser's use, and the laser can be applied to scenarios requiring fluorescence, thereby enriching the application scenarios of lasers.

[0113] The laser in this embodiment can be used as a light source in laser projection equipment. In addition to the laser, the projection light source may also include other optical components, such as a homogenizing component, a shaping component, and a converging lens. The homogenizing component homogenizes the laser light emitted by the laser, the shaping component shapes the laser spot into the shape required for the projected image, and the converging lens focuses the laser light into subsequent components. For example, the homogenizing component can be a light guide.

[0114] This application also provides a projection device, which may include the aforementioned light source component, as well as a light valve and a lens. The laser emitted by the light source component can be directed towards the light valve, modulated by the light valve, and then directed towards the lens. The lens can then project the received laser to form a projected image. Because the laser emitted by the projection light source has good quality, the display effect of the projected image formed based on this laser is also good, thus improving the display effect of the projection device.

[0115] In this application, the terms "at least one of A and B" and "A and / or B" are merely descriptions of the relationships between related objects, indicating that three relationships can exist: A alone, A and B simultaneously, and B alone. The term "at least one of A, B, and C" indicates that seven relationships can exist: A alone, B alone, C alone, A and B simultaneously, A and C simultaneously, C and B simultaneously, and A, B, and C simultaneously. In the embodiments of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "at least one" refers to one or more, and the term "multiple" refers to two or more, unless otherwise expressly defined.

[0116] Throughout this specification and claims, the terms "comprising" and "including" are open-ended and should be interpreted as "comprising but not limited to." "Approximately" means that within an acceptable margin of error, those skilled in the art can solve the technical problem and substantially achieve the technical effect. While certain terms are used in the specification and claims to refer to specific components, those skilled in the art should understand that manufacturers may use different names to refer to the same component. This specification and claims do not distinguish components based on differences in name, but rather on differences in function.

[0117] The above description is merely an optional embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A laser, characterized in that, The laser includes: a substrate, a first frame, a light-emitting chip, a reflective component, a wavelength conversion component, and a sealing cover; The substrate is fixed to the first frame, the light-emitting chip, the reflective component and the wavelength conversion component are all located on the substrate and surrounded by the frame, and the sealing cover is located on the side of the first frame away from the substrate; The reflective component is located on the light-emitting side of the light-emitting chip; the reflective component is prismatic, and the surface of the reflective component near the light-emitting chip is an inclined surface, which faces away from the substrate; the wavelength conversion component is located on the inclined surface; The laser emitted by the light-emitting chip is directed towards the wavelength conversion component, which emits fluorescence towards the sealing cover under the excitation of the laser. The sealing cover transmits the fluorescence, and the color of the fluorescence is different from the color of the laser. The substrate and the reflective component are integrally formed. The reflective component is located on the substrate at the edge of the light-emitting chip. The surface of the reflective component away from the light-emitting chip is aligned with the edge of the substrate. The laser also includes an encapsulation structure located on the substrate and surrounded by the first frame, the encapsulation structure being used to form a sealed space, in which the light-emitting chip is located; The packaging structure has a light-emitting target sidewall located on the light-emitting side of the light-emitting chip and is transparent to light. The laser emitted by the light-emitting chip passes through the target sidewall and is directed towards the wavelength conversion component. All surfaces of the packaging structure except the target sidewall are coated with light-absorbing material. During the mounting process of the wavelength conversion component, the light-emitting chip is lit up, and the position of the wavelength conversion component is set based on the irradiation position, the size and shape of the light spot of the laser emitted by the light-emitting chip; The airtightness level of the sealed space formed by the encapsulation structure is 10. -5 Pa cubic meters per second; The laser includes multiple packaging structures and multiple light-emitting chips corresponding to each of the multiple packaging structures. Each light-emitting chip is located in a sealed space enclosed by the corresponding packaging structure. The multiple light-emitting chips are all used to emit laser light to the wavelength conversion component. The multiple packaging structures are positioned symmetrically about a target axis in the housing space of the laser. The target axis is a straight line passing through the center of the wavelength conversion component and parallel to the surface of the substrate. The target axis passes through the center of the middle surface of the wavelength conversion component.

2. The laser according to claim 1, characterized in that, The inclined surface is a reflective surface, or the surface of the wavelength conversion component near the inclined surface is a reflective surface; the reflective surface is used to make the fluorescence emitted in a direction away from the substrate; And / or, the area of ​​the wavelength conversion component is smaller than the area of ​​the inclined surface.

3. The laser according to claim 2, characterized in that, The first frame includes a first sidewall, a second sidewall, and a third sidewall connected in sequence; the second sidewall is opposite to the reflective component, and the first sidewall and the third sidewall are respectively fixed to two sides of the reflective component located on opposite sides of the inclined surface.

4. The laser according to claim 3, characterized in that, The first frame further includes a strip-shaped portion, which connects the first sidewall and the third sidewall and is fixed to the surface of the reflective component away from the substrate; the surface of the strip-shaped portion away from the reflective component, together with the surfaces of the first sidewall, the second sidewall, and the third sidewall away from the substrate, form a flat annular surface, and the sealing cap is fixed to the annular surface; And / or, The first frame further includes a plate-shaped portion, and the second sidewall is located on the plate-shaped portion; the target side of the substrate near the second sidewall is fixed to the side of the plate-shaped portion, and the two sides of the substrate connected to the target side are respectively fixed to the first sidewall and the third sidewall; the plate-shaped portion is provided with a conductive structure that connects the inside and outside of the enclosed area of ​​the first frame, and the light-emitting chip is electrically connected to one end of the conductive structure located in the enclosed area of ​​the first frame.

5. The laser according to claim 1, characterized in that, The encapsulation structure includes a second frame and a top cover. The second frame includes the target sidewall and other sidewalls connected to the target sidewall. The second frame is fixed to the substrate, and the light-emitting chip is located on the substrate and surrounded by the second frame. The top cover is fixed to the side of the second frame away from the substrate. The sealed space is enclosed by the encapsulation structure and the substrate. Alternatively, the encapsulation structure includes a base plate, a second frame, and a top cover. The second frame includes the target sidewall and other sidewalls connected to the target sidewall. The base plate is fixed to the second frame, the light-emitting chip is located on the base plate and surrounded by the second frame, and the top cover is fixed to the side of the second frame away from the base plate. The sealed space is enclosed by the encapsulation structure.

6. The laser according to claim 1 or 5, characterized in that, The target sidewall has a convex arc surface that protrudes into or out of the sealed space, and the target sidewall is also used to collimate and emit the received laser.

7. The laser according to claim 6, characterized in that, The laser also includes a heat sink located in the sealed space, and the light-emitting chip is located on the side of the heat sink away from the substrate; The light-emitting chip is located on the side of the heat sink away from the substrate; the end of the heat sink near the target sidewall has a limiting protrusion, which abuts against the target sidewall.

8. The laser according to any one of claims 1, 2, 4 to 5, characterized in that, The laser satisfies at least one of the following conditions: The laser also includes a collimating lens, which is located between the light-emitting chip and the wavelength conversion component. The laser emitted by the light-emitting chip is directed towards the collimating lens, which collimates the received laser before it is emitted. The laser directed towards the wavelength conversion component is the laser collimated by the collimating lens. The substrate is made of a composite material of diamond and copper, or oxygen-free copper. The materials of the reflective component include: a composite material of diamond and copper, or oxygen-free copper; Furthermore, the material of the first frame includes ceramic.

Citation Information

Patent Citations

  • Laser

    CN217507922U