A large-area horizontal CAT-CVD coating chamber and equipment

Abstract

The present invention relates to the technical field related to coating equipment, and specifically to a large-area horizontal CAT-CVD coating chamber and equipment, including a cavity and an upper cover located above the cavity, wherein the cavity and the upper cover enclose a vacuum inner cavity, an air outlet spray plate is arranged above the upper cover, and a plurality of tungsten wires are arranged below the air outlet spray plate, wherein the tungsten wires are connected to the air outlet spray plate through a plurality of suspension components, and the air outlet spray plate and the tungsten wires are respectively located in the vacuum inner cavity. The present invention solves the sagging problem caused by the horizontal structure tungsten wire in a high temperature environment by stretching the tungsten wire through segmented support and counterweights, realizes the mutual parallelism between the tungsten wire and the carrier plate, and ensures the equal spacing required for excellent film thickness uniformity. The uniformity of the process gas airflow field is achieved through the design of combining the uniform air plate and the air outlet spray plate, and uniformly opening holes around the silicon wafer slots of the carrier plate, and finally achieves excellent coating uniformity.

Description

Technical Field

[0001] The present invention relates to the technical field related to coating equipment, and in particular to a large-area horizontal CAT-CVD coating chamber and equipment. Background Art

[0002] CAT-CVD equipment is a catalytic chemical vapor deposition equipment (catalytic chemical vapor deposition, referred to as CAT-CVD), which uses high-temperature catalytic materials to thermally decompose the process gas reaching the surface of the catalytic material into atomic groups required for coating. The atomic groups diffuse and move to deposit the required film layer on the surface of the silicon wafer. In photovoltaic heterojunction coating applications, the reaction raw gas of CAT-CVD coating equipment is SiH4, and the catalytic material is usually tungsten wire. When the process gas contacts the tungsten wire, Si and H atoms are generated under the high-temperature decomposition of the tungsten wire. The catalytic cracking of the process gas by CAT-CVD coating equipment is much higher than that of PECVD equipment. Due to the catalytic tungsten wire The surface temperature is high, and the reactants will not be deposited on the surface of the tungsten wire, but will continue to react with the unreacted SiH4. Compared with PECVD equipment, there is a greater probability of generating SiH3, which is generally considered to be an important component of high-quality amorphous silicon film and microcrystalline silicon film. Since the tungsten wire is prone to expansion, sagging and breaking at high temperatures, and the tungsten wire needs to be kept horizontal and not drooping to ensure process performance, traditional CAT-CVD is basically a vertical structure, but vertical CAT-CVD coating equipment makes it difficult to load and unload silicon wafers, and the coating thickness uniformity is poor, resulting in few mature applications of CAT-CVD coating equipment. Summary of the invention

[0003] The purpose of the present invention is to overcome the defects of the prior art and provide a large-area horizontal CAT-CVD coating chamber and equipment.

[0004] The technical solution for achieving the purpose of the present invention is:

[0005] A large-area horizontal CAT-CVD coating chamber comprises a cavity and an upper cover located above the cavity, wherein the cavity and the upper cover enclose a vacuum inner cavity, an air outlet spray plate is arranged above the upper cover, a plurality of tungsten wires are arranged horizontally below the air outlet spray plate, the tungsten wires are connected to the air outlet spray plate through a plurality of suspension components, and the air outlet spray plate and the tungsten wires are respectively located in the vacuum inner cavity.

[0006] The head and tail ends of the tungsten wire in the above technical solution pass through the side wall of the cavity and are connected to the external power supply; a counterweight is passed through the middle of the tungsten wire to make the tungsten wire present a U-shaped structure.

[0007] In the above technical solution, a support plate is arranged on the air outlet spray plate, the support plate is located between the suspension assembly and the counterweight, and the tungsten wire passes through the support plate.

[0008] The suspension assembly described in the above technical solution includes a fixing member and a supporting member connected to the fixing member, the tungsten wire is placed on the supporting member, and the supporting portion is provided with a blocking portion for limiting the tungsten wire from detaching from the supporting member.

[0009] The fixing member and the supporting member described in the above technical solution are both made of insulating material.

[0010] In the above technical solution, at least one air inlet channel is provided on the upper cover, and the air inlet channel is communicated with the air outlet spray plate. A plurality of air outlet holes are provided on a side of the air outlet spray plate away from the upper cover.

[0011] In the above technical solution, a transmission mechanism is symmetrically arranged on the side wall of the cavity, a carrier is arranged on the transmission mechanism, the carrier is located below the tungsten wire, the carrier array is evenly distributed with silicon wafer grooves, and carrier plate air holes are evenly distributed around the silicon wafer grooves.

[0012] The carrier plate of the cavity described in the above technical solution is made of high temperature resistant carbon fiber composite material.

[0013] The bottom of the cavity in the above technical solution is provided with a lifting platform, and the lifting platform is located below the carrier plate. The lifting platform is provided with an electrostatic chuck.

[0014] The bottom of the cavity described in the above technical solution is provided with a vacuum pumping device.

[0015] A large-area horizontal CAT-CVD coating device comprises the large-area horizontal CAT-CVD coating chamber.

[0016] After adopting the above technical solution, the present invention has the following positive effects:

[0017] (1) The present invention designs a large-area horizontal CAT-CVD coating equipment, which uses a suspension assembly and a counterweight to stretch the tungsten wire, thereby solving the sagging problem of the horizontal tungsten wire in a high-temperature environment, ensuring the performance of the process while reducing the risk of breakage and ensuring the equal spacing required for excellent film thickness uniformity. At the same time, it can be applied to large-area occasions to increase production capacity and improve the cost-effectiveness of the equipment.

[0018] (2) The present invention realizes the uniformity of the process gas flow field through the air intake module that combines the air uniformizing plate and the air outlet spray plate, and the design of uniformly opening holes around the silicon wafer slots of the carrier plate, thereby achieving excellent coating uniformity.

[0019] (3) The carrier plate uses a high-temperature resistant carbon fiber composite material to reduce the thermal expansion of the carrier plate and solve the problem of carrier plate sagging caused by high temperature environment. The catalytic tungsten filament and the carrier plate are parallel to each other, ensuring the equal spacing required for excellent film thickness uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a structural schematic diagram of the present invention;

[0021] Figure 2 for Figure 1 A is an enlarged schematic diagram;

[0022] Figure 3 It is a schematic diagram of the structure of the carrier plate, tungsten wire and fixed frame;

[0023] Figure 4 for Figure 3 A magnified schematic diagram of B;

[0024] Figure 5 A schematic diagram of the structure of the hook.

[0025] In the figure: cavity 300, upper cover 100, vacuum inner cavity 200, air outlet spray plate 1, tungsten wire 3, suspension assembly 2, conductive terminal 31, power supply 32, counterweight 5, support plate 6, air uniforming plate 7, support plate extension plate 61, connecting member 20, fixing member 21, supporting member 27, placement portion 26, blocking portion 28, arc inlet 29, air inlet channel 101, air outlet hole 11, transmission mechanism 8, carrier plate 4, silicon wafer slot 41, carrier plate air hole 42, lifting platform 9, vacuum device 301, first cavity 22, second body cavity 23, first through hole 24, second through hole 25. First suspension assembly 21, second suspension assembly 22. Implementation

[0026] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0027] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0028] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0029] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the invention is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0030] In addition, the terms "horizontal", "vertical", "overhanging" and the like do not mean that the components are required to be absolutely horizontal or overhanging, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0031] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. Example

[0032] See Figures 1 to 3 The present invention provides a large-area horizontal CAT-CVD coating chamber, including a cavity 300 and an upper cover 100 located above the cavity 300. The cavity 300 and the upper cover 100 surround a vacuum cavity 200. A gas outlet spray plate 1 is arranged above the upper cover 100. A plurality of tungsten wires 3 are horizontally arranged below the gas outlet spray plate 1. The tungsten wires are connected to the gas outlet spray plate 1 through a plurality of suspension components 2. The gas outlet spray plate 1 and the tungsten wires 3 are respectively located in the vacuum cavity 200.

[0033] This embodiment is a basic embodiment of the present invention. The tungsten wire 3 is used to heat the catalytic process gas. In order to prevent the tungsten wire 3 from sagging in the large-area horizontal CAT-CVD coating equipment, the gas outlet spray plate 1 uses multiple suspension components 2 to support the tungsten wire 3 in sections. The support here means that the tungsten wire 3 passes through the suspension component 2 and is hooked by the suspension component 2. The design of the suspension component 2 can keep the tungsten wire 3 horizontal and not sagging at high temperatures, which ensures the performance of the process while reducing the risk of breakage. The number of suspension components 2 is adjusted according to the length of the tungsten wire 3, which will not be elaborated here.

[0034] In this embodiment, in order to adapt to the large-area horizontal CAT-CVD coating equipment, the tungsten wire 3 can be a single tungsten wire, and the head and tail ends of the tungsten wire 3 pass through the side wall of the cavity 300 and are connected to the external power supply 32; a counterweight 5 is passed through the middle of the tungsten wire 3 to make the tungsten wire 3 have a U-shaped structure, and its U-shape can reduce power supply wiring. Figure 3 For example, there are five tungsten wires 3 in a U-shaped structure, and the multiple tungsten wires 3 are arranged horizontally, so that the distance between the tungsten wires 3 and the carrier plate 4 (horizontal transmission) can be equal, so as to provide a guarantee for achieving uniform coating on the surface of the silicon wafer. Of course, it is understandable that the specific number can be adjusted according to actual conditions, and too many restrictions should not be made here. When the tungsten wire 3 heats up and expands, the tungsten wire 3 freely extends horizontally along the length direction between the multiple suspension components 2. The downward force of the deadweight of the counterweight 5 straightens and flattens the tungsten wire 3 placed in the suspension component 2 in sections, so that the tungsten wire 3 and the carrier plate 4 are parallel to each other, and the equal spacing required for excellent film thickness uniformity is ensured. Each tungsten wire 3 is passed through the counterweight 5, that is, it passes through the middle of the counterweight 5, so that the single tungsten wire has a U-shaped structure as a whole. Figure 1 As shown, the counterweight 5 and the power source 32 are respectively located on both sides of the tungsten wire 3. The counterweight 5 is in a long strip shape, and the distance between the two tungsten wires formed by bending the same tungsten wire 3 through the counterweight 5 is adjusted by adjusting the length of the counterweight 5.

[0035] The two ends of the whole tungsten wire 3 are connected to the power supply 32 through the conductive terminal 31, so that the tungsten wire reaches a high temperature of about 1800°C. Each tungsten wire 3 has a certain number of suspension components 2 spaced at a certain distance in the length direction of the U-shaped structure, which hook the tungsten wire 3 and pass through it. The suspension component 2 is a high-temperature resistant material. When the tungsten wire 3 heats up and expands, the tungsten wire 3 can freely extend in the suspension component 2 along the length direction; because the tungsten wire 3 of the U-shaped structure has a counterweight 5 at one end of the U-shaped structure, when the tungsten wire is in the suspension component 2, it will not sag, but will still remain horizontal. The counterweight 5 moves down with one end of the U-shaped tungsten wire 3 with its own weight. According to calculation, the maximum amount of downward movement is known. At the same time, a support plate 6 is designed to support the counterweight 5 without continuing to tighten the tungsten wire, ensuring that the tungsten wire is continuously horizontal, solving the problem of continuous tension and breakage of the tungsten wire, and ensuring good film thickness uniformity.

[0036] In this embodiment, the cavity 300 is fixedly connected with a conductive terminal 31, and the conductive terminal 31 is connected to the power supply 32 and a plurality of tungsten wires 3. Each U-shaped tungsten wire is connected to the power supply 32 after being matched with two conductive terminals, and the plurality of U-shaped tungsten wires are respectively matched with two conductive terminals and connected in parallel to the power supply 32.

[0037] At least one air inlet channel 101 is provided on the upper cover 100, and the air inlet channel 101 is connected to the air outlet spray plate 1. A plurality of air outlet holes 11 are provided on the side of the air outlet spray plate 1 away from the upper cover 100. The air outlet holes 11 allow the process gas to be sprayed onto the surface of the tungsten wire 3 below. The high-temperature (1800°C) tungsten wire decomposes the process gas, and finally forms a high-quality amorphous silicon film and a microcrystalline silicon film on the surface of the silicon wafer on the carrier plate 4 below.

[0038] Specifically, the air inlet part, the upper cover 100, the air uniforming plate 7, and the air outlet spray plate 1 form independent gas diffusion spaces between each other; and then through the air outlet holes designed on the air uniforming plate 7 and the air outlet spray plate 1 and distributed in a certain regular pattern, the gas is evenly circulated and diffused twice, and finally evenly diffused to the surfaces of the several groups of tungsten filaments 3 below; at the same time, the carrier plate 4 below the tungsten filament 3 is designed with carrier plate air holes 41, and the carrier plate air holes 42 are distributed around each silicon wafer groove 41, so that the process gas can flow evenly through the carrier plate 4, and the uniform design of the air inlet and the air outlet can realize that the silicon wafer surface receives the process gas evenly, ensuring good film thickness uniformity.

[0039] In this embodiment, a support plate 6 is provided on the air outlet spray plate 1, the support plate 6 is located between the suspension assembly 2 and the counterweight 5, and the tungsten wire 3 passes through the support plate 6. Figure 1 , Figure 2 , Figure 5As shown, there are two suspension components arranged near the counterweight 5, namely the first suspension component 21 and the second suspension component 22. The tungsten wire 3 between the first suspension component 21 and the counterweight 5 is passed through a tray 6, and the top of the tray 6 is set on the gas outlet spray plate 1. Similarly, the tungsten wire 3 between the first suspension component 22 and the counterweight 5 is passed through another tray 6, and the top of the tray 6 is also set on the gas outlet spray plate 1. The support plate 6 is provided with a through hole to facilitate the placement of the tungsten wire 3 after passing through.

[0040] Furthermore, the support plate 6 is also connected to a support plate extension plate 61, and the support plate extension plate 61 is located below the counterweight 5. According to calculations, the maximum downward movement of the tungsten wire 3 is known, and the support plate extension plate 61 is used to support the counterweight 5, so that the counterweight 5 will not continue to tighten the tungsten wire 3, ensuring that the tungsten wire 3 is continuously horizontal, solving the problem of continuous tension and fracture of the tungsten wire 3, and ensuring good film thickness uniformity.

[0041] In this embodiment, a gas uniformity plate 7 is connected between the upper cover 100 and the gas outlet shower plate 1. The gas uniformity plate 7 is used to achieve uniform circulation and diffusion of the process gas.

[0042] In this embodiment, a transmission mechanism 8 is disposed inside the cavity 300 . The transmission mechanism 8 may be a transmission roller disposed on the side wall of the cavity, and the carrier 4 is placed on the transmission mechanism 8 . The transmission mechanism 8 is used to transport the carrier 4 to the inside of the cavity 300 .

[0043] In this embodiment, a lifting platform 9 is provided at the bottom of the cavity 300, and the lifting platform 9 is located below the carrier 4. The lifting platform 9 is used to raise the carrier 4 to the height required by the process. The lifting platform 9 is designed with an electrostatic chuck (with a built-in cooler, mainly for the purpose of cooling). The electrostatic chuck function can maintain the carrier 4 at the temperature required by the process, avoiding excessive temperature caused by tungsten wire radiation. At the same time, the lifting platform 9 can freely adjust the distance between the tungsten wire 3 and the carrier 4, greatly increasing the effective process space, so that the equipment can meet the continuous progress of process technology requirements. The lifting platform 9 can be provided with an avoidance port (not shown in the figure) to allow the transmission mechanism 8 to pass.

[0044] A transmission mechanism 8 is symmetrically arranged on the side wall of the cavity 300, and a carrier plate 4 is arranged on the transmission mechanism 8. The carrier plate 4 is located below the tungsten wire 3. The carrier plate 4 is evenly distributed with silicon wafer grooves 41 in an array, and carrier plate air holes 42 are evenly distributed around the silicon wafer grooves 41. The silicon wafer grooves 41 are used to place silicon wafers to be coated in an array, which is suitable for industrial high-productivity operations. The carrier plate air holes 42 are evenly distributed around each silicon wafer groove 41, and cooperate with the gas uniformity plate 7 and the gas outlet spray plate 1. Under the action of the vacuum device 301, the process gas can be more evenly circulated through the carrier plate 4, so that the surface of the silicon wafer receives the process gas evenly.

[0045] Each silicon wafer slot 41 on the carrier 4 where silicon wafers are placed is surrounded by carrier pores 42. When the process gas passes through the tungsten filament 3 and reaches the surface of the silicon wafer on the carrier 4, in addition to the gap flow channels around the entire carrier 4 and the side wall of the cavity having exhaust suction for the process gas, the gas flow channels formed by the process gas passing through the carrier pores 42 will also have exhaust suction effect on the process gas, and the gas flow channels formed by the carrier pores 42 around a certain silicon wafer slot 41 will not only have exhaust suction effect on the reaction gas above the silicon wafer slot 41 itself, but also have exhaust suction effect at different angles on the process gas above the nearby silicon wafer slots 41; under the joint effect of the gap flow channels on the side wall of the cavity of the entire carrier 4 and the flow channels formed by the carrier pores 42 distributed on the silicon wafer slots 41 on the carrier 4, the gas cost after passing through the surface of the tungsten filament 3 is evenly diffused to various areas on the carrier 4, ensuring the excellent coating uniformity of the silicon wafers on the silicon wafer slots 4, and finally ensuring the good conversion efficiency of the battery cells.

[0046] The carrier 4 is preferably made of carbon fiber composite materials. The thermal expansion coefficient of carbon fiber materials is very small, and almost no expansion deformation will occur within the process temperature range. At the same time, the density of carbon fiber is low and the elastic modulus is relatively large, and it has excellent rigidity. The use of carbon fiber material can ensure that under the same size, the self-weight sag deformation and thermal expansion deformation are smaller, thereby ensuring the flatness of the carrier, and then ensuring the distance between the carrier and the tungsten wire, ensuring the uniformity of the silicon wafer coating on the carrier 4.

[0047] A vacuum device 301 is provided at the bottom of the cavity 300 to provide power for the circulation of process gases, that is, to provide exhaust suction force for the gap flow channel on the side wall of the entire cavity of the carrier 4 and the flow channel formed by the carrier pores 42 distributed on the silicon wafer grooves 41 on the carrier 4. Example

[0048] See Figure 1 , Figure 3 , Figure 4 , Figure 5The difference between this embodiment and embodiment 1 is that the suspension assembly 2 includes a fixing member 21 and a support member 27 connected to the fixing member 21 , the tungsten wire 3 is placed on the support member 27 , and the support portion is provided with a blocking portion 28 for limiting the tungsten wire 3 from detaching from the support member 27 . The suspension component 2 includes a fixing part 21, which is a square structure. A first cavity 22 is opened in the middle and a second cavity 23 is opened at the bottom. A first through hole 24 and a second through hole 25 are opened along the height direction of the fixing part 21. The first through hole 24 runs through the top of the fixing part 21 to the first cavity 22. The first through hole 24 is used to install the connecting part 20 so that the suspension component 2 is set on the spray outlet hole 1. The second through hole 23 runs through the first cavity 22 and the second cavity 23. The second through hole 23 connects the first cavity 22 and the second cavity 23. The second through hole 23 is used to install the support member 27 on the fixing part 21, for example, a screw is passed through the second through hole 25 to fix the support member 27 located in the second cavity 23. The first cavity 25 is used to provide an installation space, which is convenient for installing the suspension component 2 on the air outlet spray plate 1, and for installing the support member 27 and the fixing part 21, so that 27 is easy to disassemble and replace. The second cavity 23 is a space for placing part of the support member 27. In addition, a support platform 40 is provided in the second space 23 to strengthen the support. The support member 27 can be embedded into the support platform 40 first, and then the support member 27 can be fixed to the fixing member 21 by screws.

[0049] Another connection method: nuts are preset in the first cavity 22 and the second cavity 23 (not shown in the figure), the connecting piece 20 is inserted into the first cavity 22 from the first through hole 24 and threadedly connected with the nut, and the bolt column 20 passes through the nut of the first hook body cavity 22 and continues downward until it passes through the second through hole 25, enters the second cavity 23 and is threadedly connected and fixed with the nut inside.

[0050] The support member 27 is partially embedded in the fixing member 21, and partially used to support the tungsten wire 3. The support member 27 is provided with a placement portion 26, and a protruding blocking portion 28 is integrally provided with the placement portion 26. An arc-shaped entrance 29 is provided on the top of the blocking portion 28. The tungsten wire 3 can enter from the arc-shaped entrance 29 and then be placed on the placement portion 26. The blocking portion 28 is higher than the placement portion 26, which can prevent the tungsten wire 3 from slipping off the placement portion 26. In addition, at the arc-shaped entrance 29, the two sides of the placement portion 26 partially overlap with the arc of the blocking portion 28, which can reduce the area on which the tungsten wire 3 is placed as much as possible, and prevent the tungsten wire 3 from being placed too much in the placement portion 26, thereby reducing the heating efficiency of the tungsten wire 3.

[0051] When installing the tungsten wire, bend it slightly so that it can enter through the arc-shaped entrance 29 of the support 27. When the tungsten wire enters the placement portion 26, the tungsten wire naturally straightens due to the rigidity and elasticity of the hook itself. The original arc-shaped entrance 29 is combined with the blocking portion 28 to limit the movement of the tungsten wire 3. In this way, the tungsten wire can be well constrained in the placement portion 26, solving the problem that conventional designs require additional fixing parts but are limited in space.

[0052] During the process reaction, the temperature of the tungsten wire is too high (1800℃), and the standard fasteners used for conventional fixing cannot withstand this. In addition, in order to evenly distribute the process gas to every position of the tungsten wire, the hook needs to be as small as possible, and the contact surface with the tungsten wire needs to be as small as possible, and it should be easy to install.

[0053] The fixing member 21 and the supporting member 27 are both made of insulating material, preferably a high temperature resistant material to prevent damage in a high temperature chamber. Example

[0054] See Figures 1 to 5 The present invention also provides a large-area horizontal CAT-CVD coating device, including the large-area horizontal CAT-CVD coating chamber in the above-mentioned embodiment 1 or embodiment 2.

[0055] Large-area horizontal CAT-CVD coating equipment includes multiple chambers, each of which processes the silicon wafer differently. One of the chambers is a large-area horizontal CAT-CVD coating chamber, which can coat the surface of the silicon wafer. Depending on the different gases introduced into the equipment and the adjustment of the equipment process parameters, it can form an amorphous silicon film or a microcrystalline silicon film to form a layered structure in the composition of the battery cell.

[0056] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A large-area horizontal CAT-CVD coating chamber, characterized in that: The invention comprises a cavity (300) and an upper cover (100) located above the cavity (300), wherein the cavity (300) and the upper cover (100) enclose a vacuum inner cavity (200), wherein an air outlet spray plate (1) is arranged above the upper cover (100), and a plurality of tungsten wires (3) are arranged horizontally below the air outlet spray plate (1), wherein the tungsten wires are connected to the air outlet spray plate (1) via a plurality of suspension components (2), and the air outlet spray plate (1) and the tungsten wires (3) are respectively located in the vacuum inner cavity (200); The suspension assembly (2) comprises a fixing member (21) and a support member (27) connected to the fixing member (21), the tungsten wire (3) being placed on the support member (27), and the support member (27) being provided with a blocking portion (28) for preventing the tungsten wire (3) from detaching from the support member (27); The support member (27) is provided with a placement portion (26), and the top of the blocking portion (28) is provided with an arc-shaped entrance (29). At the arc-shaped entrance (29), two sides of the placement portion (26) partially overlap with the arc of the blocking portion (28).

2. A large-area horizontal CAT-CVD coating chamber according to claim 1, characterized in that: The head and tail ends of the tungsten wire (3) pass through the side wall of the cavity (300) and are connected to the external power source (32); a counterweight (5) is passed through the middle of the tungsten wire (3) so that the tungsten wire (3) has a U-shaped structure.

3. A large-area horizontal CAT-CVD coating chamber according to claim 2, characterized in that: A support plate (6) is provided on the air outlet spray plate (1), the support plate (6) is located between the suspension component (2) and the counterweight (5), and the tungsten wire (3) passes through the support plate (6).

4. A large-area horizontal CAT-CVD coating chamber according to claim 1, characterized in that: The fixing member (21) and the supporting member (27) are both made of insulating material.

5. A large-area horizontal CAT-CVD coating chamber according to claim 1, characterized in that: At least one air inlet channel (101) is provided on the upper cover (100), the air inlet channel (101) is in communication with the air outlet spray plate (1), and a plurality of air outlet holes (11) are provided on a side of the air outlet spray plate (1) away from the upper cover (100).

6. A large-area horizontal CAT-CVD coating chamber according to claim 1, characterized in that: A transmission mechanism (8) is symmetrically arranged on the side wall of the cavity (300), a carrier plate (4) is arranged on the transmission mechanism (8), the carrier plate (4) is located below the tungsten wire (3), the carrier plate (4) is evenly distributed with silicon wafer grooves (41) in an array, and carrier plate air holes (42) are evenly distributed around the silicon wafer grooves (41).

7. A large-area horizontal CAT-CVD coating chamber according to claim 6, characterized in that: The carrier plate (4) is made of a high temperature resistant carbon fiber composite material.

8. A large-area horizontal CAT-CVD coating chamber according to claim 6, characterized in that: A lifting platform (9) is provided at the bottom of the cavity (300), the lifting platform (9) is provided with an electrostatic chuck, and the lifting platform (9) is located below the carrier plate (4).

9. A large-area horizontal CAT-CVD coating equipment, characterized in that: It comprises a large-area horizontal CAT-CVD coating chamber as described in any one of claims 1-8.

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