A 2D / 3D perovskite film grown in situ using transfer-assisted printing, preparation method and application thereof

Abstract

The present invention discloses a 2D / 3D perovskite film, a preparation method, and an application thereof that utilizes transfer-assisted in-situ growth, belonging to the field of perovskite photovoltaic device technology, specifically including perovskite precursor preparation, transfer template casting and preparation, 3D perovskite film preparation, and 2D / 3D perovskite film preparation; a method for utilizing transfer-assisted in-situ growth of a 2D / 3D perovskite film, wherein a pre-prepared cationic salt-PDMS template is directly hot-stamped onto a pre-annealed 3D perovskite film, so that the cationic salt can directly participate in the perovskite crystallization process, synchronously eliminating bulk defects and interface defects in the film, thereby obtaining a 2D / 3D perovskite film with crystal orientation growth. Rigid and flexible perovskite photovoltaic devices are prepared using this process, thereby improving the photoelectric conversion efficiency and operating stability of the device.

Description

Technical Field

[0001] The present invention belongs to the technical field of perovskite photovoltaic devices, and specifically relates to the preparation of 2D / 3D perovskite films by transferring the cationic interface layer using hot embossing technology. This method is used to prepare inverted structure perovskite solar cells on rigid and flexible substrates, respectively, and significantly improve their photoelectric conversion efficiency and working stability, thereby achieving a significant improvement in the various photoelectric properties of the device. Background Art

[0002] Perovskite solar cells (PSCs) have attracted widespread attention due to their rapidly improving power conversion efficiency (PCE). Flexible perovskite solar cells (FPSCs) hold great potential for application in portable and wearable electronics. The quality of perovskite films is a major constraint on the efficiency and operational stability of inverted FPSCs and PSCs. Currently, interface engineering can effectively improve the optical and electrical properties of perovskite films, enhancing the efficiency and stability of perovskite solar cells. However, polymer interface materials are relatively expensive, hindering their large-scale deployment. Small molecule interface materials are relatively inexpensive but offer limited protection against water and oxygen corrosion. Compared to these two materials, 2D perovskite interface layers offer numerous advantages. They can repair ion vacancies and grain boundaries on the perovskite surface, facilitating carrier extraction and transport, while hindering ion migration and water and oxygen corrosion. However, the use of inappropriate solvents in conventional spin-coating interface growth processes can adversely affect the surface and superficial layers of the perovskite layer, leading to reduced device performance. Therefore, the development of new fabrication processes and the selection of appropriate materials are needed to eliminate interface defects in perovskite films and improve film quality. Summary of the Invention

[0003] In view of the shortcomings of the existing technology, the technical problem to be solved by the present invention is: using the method of transfer-assisted in situ growth of 2D / 3D perovskite films, a pre-prepared cationic salt-PDMS template is directly hot-stamped on the pre-annealed 3D perovskite film, so that the cationic salt can directly participate in the perovskite crystallization process, and simultaneously eliminate the bulk defects and interface defects in the film, thereby obtaining a 2D / 3D perovskite film with directional crystal growth.

[0004] The present invention is achieved through the following technical solutions:

[0005] A method for in-situ growth of 2D / 3D perovskite films using transfer-assisted in situ growth, comprising the following steps:

[0006] (1) Preparation of perovskite precursor;

[0007] The specific steps are as follows: first, lead iodide (PbI2) is added to a solvent and stirred thoroughly to obtain a precursor solution 1; formamidine hydroiodide (FAI), methylamine hydroiodide (MAI), and methylamine hydrochloride (MACl) are mixed according to a stoichiometric ratio, and a solvent is added to the mixture and stirred thoroughly to obtain a precursor solution 2;

[0008] (2) Casting and preparation of transfer template;

[0009] The specific steps are as follows: polydimethylsiloxane (PDMS) and a curing agent (Dow Corning) are mixed in a mass ratio of 10:1 to obtain a PDMS prepolymer, which is then thoroughly stirred and centrifuged to remove internal bubbles; then, a clean silicon template is taken and the evenly mixed PDMS prepolymer is poured onto the silicon template and allowed to stand for a period of time until it self-levels to form a PDMS film; then, the PDMS film is placed in an oven and baked to solidify; then, the fully solidified PDMS film is peeled off from the silicon template to obtain a PDMS membrane; finally, the PDMS membrane is immersed in a cationic salt solution, removed and dried to obtain a transfer template;

[0010] (3) Preparation of 3D perovskite films;

[0011] The specific steps are as follows: first, the substrate is cleaned and dried; then, the mixed precursor solution 1 obtained in step (1) is spin-coated on the substrate and placed on a heating table for annealing; then, the mixed precursor solution 2 obtained in step (1) is spin-coated on the substrate that has just been annealed; finally, the substrate with the 3D perovskite film is placed on a heating table for annealing;

[0012] (4) Transfer-assisted in-situ growth of 2D / 3D perovskite films;

[0013] The specific steps are as follows: first, the PDMS template with a cationic layer obtained in step (2) is covered on the 3D perovskite film obtained in step (3); then, both are placed in a nanoimprinter for hot stamping; finally, the top PDMS template is peeled off, and after cooling, the perovskite surface is cleaned with a cleaning solvent, and the substrate is placed on a heating table for annealing to obtain a 2D / 3D perovskite film with reduced interface and internal non-radiative defects and high-quality crystallization.

[0014] Furthermore, in the precursor 1 of step (1), the concentration of PbI2 is 1.3-1.6 mol / L; the solvent is a mixed solution of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), and the volume ratio of DMF:DMSO is 6:1-10:1; the stirring time is 2-10 h;

[0015] Furthermore, in the precursor 2 of step (1), the concentration of FAI is 0.4–0.8 mol / L, the concentration of MAI is 0.03–0.08 mol / L, and the concentration of MACl is 0.07–0.12 mol / L; the solvent is isopropyl alcohol (IPA); and the stirring time is 2–10 h.

[0016] Furthermore, the formamidine hydroiodide (FAI), methylamine hydroiodide (MAI), and methylamine hydrochloride (MACl) in step (1) are mixed in a stoichiometric ratio of 50 mg:5 mg:5 mg to 90 mg:9 mg:9 mg.

[0017] Furthermore, in step (2), the PDMS is centrifuged at a speed of 4000–8000 r / min and for a time of 2–6 min; the PDMS is allowed to stand for self-leveling for 10–60 min; the curing temperature of the PDMS template is 80–110° C. and the time is 1–5 h; the concentration of phenylbutylamine iodide (PhBAI) in the cationic salt solution is 1–6 mg / mL, the solvent in the cationic salt solution is isopropyl alcohol (IPA), and the immersion time is 10–60 s.

[0018] Furthermore, in step (3), the rotation speed of the spin-coating precursor solution 1 is 1000-4000 r / min, the time is 15-100 s; the annealing temperature is 50-150°C, and the time is 10-60 s; the rotation speed of the spin-coating precursor solution 2 is 2000-4000 r / min, the time is 20-50 s; the annealing temperature is 50-150°C, and the time is 5-30 min.

[0019] Furthermore, the pressure of the hot nanoimprinting in step (4) is 2-6 MPa, the temperature is 80-160° C., and the time is 5-30 min.

[0020] Furthermore, the cleaning solvent is 2,2,2-trifluoroethanol, the cleaning speed is 2000-4000 r / min, and the time is 20-50s; the annealing temperature is 50-150°C, the time is 5-20min, and the cooling time is 3-10min.

[0021] Another object of the present invention is to prepare rigid and flexible inverted structure perovskite photovoltaic devices using 2D / 3D perovskite films.

[0022] Compared with the prior art, the present invention has the following advantages:

[0023] (1) The present invention uses hot stamping to prepare a 2D / 3D perovskite film with good surface morphology, few defects, and good crystal growth orientation, thereby effectively reducing the non-radiative recombination of the perovskite film and improving the photoelectric performance of the film;

[0024] (2) High-quality, uniform 2D / 3D perovskite films are obtained by transfer-assisted in-situ growth process to prepare flat panels and wearable flexible photovoltaic devices, thereby improving the photoelectric conversion efficiency and operational stability of the devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 Schematic diagram of the process of preparing high-quality uniform 2D / 3D perovskite films using the transfer-assisted in-situ growth process of the present invention;

[0026] Figure 2 is a scanning electron microscope image of a reference perovskite film;

[0027] Figure 3 This is a scanning electron microscope photo of the transfer-assisted in-situ growth of 2D / 3D perovskite thin films in the present invention;

[0028] Figure 4 This is a grazing-incidence wide-angle X-ray scattering image of a reference perovskite film;

[0029] Figure 5 This is a grazing-incidence wide-angle X-ray scattering photograph of the transfer-assisted in-situ growth of 2D / 3D perovskite films in the present invention;

[0030] Figure 6 Figure 3 is the IV curve of PSCs prepared based on the transfer-assisted in situ growth process of the present invention and reference PSCs; wherein, the curve connected by hollow circles corresponds to the PSCs prepared based on this process, and the curve connected by solid circles corresponds to the reference PSCs prepared under the same conditions;

[0031] Figure 7 Figure 3 is a light stability test curve of PSCs prepared based on the transfer-assisted in situ growth process of the present invention and reference PSCs; wherein, the curve connected by hollow circles corresponds to the PSCs prepared based on this process, and the curve connected by solid circles corresponds to the reference PSCs based on the same conditions;

[0032] Figure 8 Figure 3 is an IV curve of FPSCs prepared based on the transfer-assisted in situ growth process of the present invention and reference FPSCs; wherein, the curve connected by hollow circles corresponds to the FPSCs prepared based on this process, and the curve connected by solid circles corresponds to the reference FPSCs prepared under the same conditions;

[0033] Figure 9 Figure 3 shows the cyclic bending test curves of FPSCs prepared based on the transfer-assisted in-situ growth process of the present invention and flexible devices prepared without this process. The curve connected by hollow circles corresponds to the FPSCs prepared based on this process, and the curve connected by solid circles corresponds to the FPSCs prepared without this process under the same conditions. DETAILED DESCRIPTION

[0034] The embodiments of the technical solution of the present invention will be described in detail below with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present invention and are therefore only examples and cannot be used to limit the scope of protection of the present invention.

[0035] It should be noted that, unless otherwise specified, the technical or scientific terms used in this application should have the common meanings understood by those skilled in the art to which the present invention belongs.

[0036] Example 1

[0037] This embodiment provides a method for preparing a 2D / 3D perovskite film with a smooth surface, low defect density, and good crystallization quality using a transfer-assisted in situ growth process. Specifically, a 3D perovskite film is first obtained by a solution method, and the pre-annealed 3D perovskite film is hot-embossed using a cationic salt-PDMS template. This can obtain a 2D / 3D perovskite film with a smooth surface, low defect density, and good crystallization quality, thereby significantly improving the photoelectric performance of the film.

[0038] like Figure 1 FIG. 1 is a flow chart of the preparation method of this embodiment, which uses a transfer-assisted in-situ growth process to prepare a 2D / 3D perovskite film with a smooth surface, low defect density, and good crystallization quality. The specific steps are as follows:

[0039] (1) Preparation of perovskite precursor: First, 1.6 mmol of PbI2 was added to 1 mL of a mixed solution of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) at a volume ratio of 9:1, and stirred for 10 h to obtain precursor solution 1; then, FAI, MAI, and MACl purchased from a third party were mixed according to the stoichiometric ratio of 0.08 mmol: 0.03 mmol: 0.07 mmol, 1 mL of isopropyl alcohol (IPA) was added, and stirred for 10 h to obtain precursor solution 2;

[0040] (2) Casting and preparation of transfer template: First, PDMS (polydimethylsiloxane) and curing agent (Dow Corning) were mixed in a mass ratio of 10:1, stirred thoroughly and centrifuged at a centrifugal speed of 6000 r / min and a centrifugal time of 6 min to remove internal bubbles; then, a clean silicon template purchased from a third party was taken, and the evenly mixed PDMS prepolymer was poured on the silicon template and allowed to stand for 60 min until it self-leveled to form a PDMS film; then, it was placed in an oven and baked at a baking temperature of 90 ° C and a baking time of 4 h to solidify it; finally, the completely cured PDMS film was peeled off from the silicon template to obtain a flat PDMS template; 1 mg of PhBAI cationic salt was dissolved in isopropyl alcohol (IPA), and the PDMS film was soaked in the cationic salt for 30 s and then taken out and dried to obtain a PDMS transfer template with a layer of cationic salt attached.

[0041] (3) Preparation of 3D perovskite film: First, 90 μL of the precursor solution 1 prepared in step 1 was added dropwise to the substrate; then, the spin coating was performed continuously at 3000 r / min for 30 seconds, and the substrate was annealed on a hot plate at 80°C for 60 seconds. Subsequently, 50 μL of the precursor solution 2 prepared in step 1 was added dropwise to the substrate, and the spin coating was performed at 2000 r / min for 30 seconds; finally, the substrate was annealed on a hot plate at 150°C for 10 minutes to obtain a 3D perovskite film.

[0042] (4) Preparation of 2D / 3D perovskite film by transfer-assisted in-situ growth process; First, the PDMS template with cationic salt obtained in step (2) is covered on the 3D perovskite film obtained in step (3); Then, both are placed in a nanoimprinter for hot embossing; The pressure of the hot nanoimprinting is 5 bar, the temperature is 160 ° C, and the time is 30 min; After the transfer is completed, the top PDMS template is peeled off, and finally, after cooling, the perovskite surface is cleaned with 2,2,2-trifluoroethanol solvent, and the cleaning speed is 4000 r / min for 30 seconds; Finally, it is placed on a hot stage at 140 ° C for annealing for 20 min to obtain a 2D / 3D perovskite film.

[0043] Depend on Figure 1 It can be seen that the preparation process of 2D / 3D perovskite film by this process is to prepare the precursor solution → prepare the 3D perovskite film → transfer the cationic salt → peel off the PDMS template to obtain the 2D / 3D perovskite film.

[0044] Depend on Figure 2 and Figure 3It can be seen that the grain size of the 2D / 3D perovskite film prepared by the method provided by the present invention is much larger than that of the reference film; the surface is smoother, without obvious holes, and the grain boundaries have been significantly passivated and modified, thereby significantly improving the crystallization quality, making the 2D / 3D perovskite film have better photoelectric response characteristics than the reference film.

[0045] Depend on Figure 4 and Figure 5 It can be seen that the proportion of oriented growth crystals in 2D / 3D perovskite films prepared using this process is significantly increased. This is because pressure promotes perovskite crystal growth, causing secondary growth of the grains, slowing the growth rate and making the grain growth orientation more orderly, thereby improving the grain size and flatness of the film. The perovskite film interface also has a two-dimensional perovskite signal, indicating that 2D / 3D perovskite films were successfully prepared using this process, resulting in 2D / 3D perovskite films with better optoelectronic properties than the reference film.

[0046] Example 2

[0047] Flat-plate inverted structure perovskite solar cells were prepared using a transfer-assisted in-situ growth process.

[0048] The 2D / 3D perovskite film prepared using this process in the present invention has orderly grain arrangement, smooth surface, low defect density and optimal growth orientation, and can be used as a high-quality light-absorbing layer to prepare flat perovskite solar cells, thereby significantly improving the photoelectric conversion efficiency and operational stability of photovoltaic devices.

[0049] PSCs were prepared using the transfer-assisted in situ growth process. The specific steps are as follows:

[0050] (1) Preparation of perovskite precursor: same as in Example 1.

[0051] (2) Casting and preparation of transfer template: same as in Example 1.

[0052] (3) Preparation of hole transport layer: First, poly (bis (4-phenyl) (2,4,6-trimethylphenyl) amine) (PTAA) purchased from a third party was mixed with a toluene solution to prepare a 2 mg / ml solution; then, 50 μl of the solution was added dropwise to a clean glass ITO spin-coated substrate at a spin-coating speed of 6000 r / min for 30 s; finally, the substrate was placed on a 100 °C hot plate for annealing for 10 min.

[0053] (4) Preparation of 3D perovskite film: The hole transport layer prepared in step (3) is used as a composite substrate; a 3D perovskite film is prepared on the composite substrate, as in Example 1.

[0054] (5) Preparation of 2D / 3D perovskite films using a transfer-assisted in-situ growth process; same as in Example 1.

[0055] (6) Prepare PSCs using this process: Place the 2D / 3D perovskite film prepared in step (4) in a vacuum evaporator and wait until the vacuum is 5×10 -4 Pa, sequentially evaporate the electron transport layer (C60 25nm) → hole blocking layer (BCP 8nm) → cathode (Cu 100nm) materials to complete the device preparation, and obtain a flat inverted structure perovskite solar cell prepared based on this process.

[0056] Depend on Figure 6 As can be seen, the current density, open-circuit voltage, fill factor, and efficiency of the PSCs prepared using this process are significantly higher than those based on the reference device. This indicates that the 2D / 3D perovskite films prepared using this process are of high quality, thereby significantly improving the optoelectronic performance of the device.

[0057] Depend on Figure 7 It can be seen that the PSCs prepared based on this process provided by the present invention have no obvious PCE attenuation phenomenon in the 1000-hour continuous light stability test, and have higher operational stability. This shows that the present invention prepares 2D perovskite as the interface layer based on this process, thereby enhancing the stability of the perovskite film, thereby significantly improving the operating stability of the device.

[0058] Example 3

[0059] Flexible inverted perovskite solar cells were prepared using a transfer-assisted in situ growth process.

[0060] The process provided in the present invention can promote the growth of perovskite film grains and reduce the surface defect density. It can be used as a high-quality functional layer to prepare flexible perovskite solar cells, thereby significantly improving the photoelectric conversion efficiency and mechanical stability of flexible photovoltaic devices.

[0061] FPSCs were prepared using the transfer-assisted in situ growth process. The specific steps are as follows:

[0062] (1) Preparation of perovskite precursor: same as in Example 1.

[0063] (2) Casting and preparation of transfer template: same as in Example 1.

[0064] (3) First, the PEN / ITO flexible substrate was placed in isopropyl alcohol and ethanol deionized water for ultrasonic cleaning for 5 minutes respectively, and then placed in a 95℃ hot air oven for drying for 10 minutes; at the same time, the glass substrate of the same size was placed in acetone and isopropyl alcohol deionized water for ultrasonic cleaning for 5 minutes respectively, and then placed in a 95℃ hot air oven for drying for 10 minutes; finally, the clean 2.5mm*2.5mm PEN / ITO flexible substrate was aligned and firmly bonded to the 2.5mm*2.5mm glass sheet to obtain a spin-coated substrate.

[0065] (4) Preparation of hole transport layer: First, poly (bis (4-phenyl) (2,4,6-trimethylphenyl) amine) (PTAA) purchased from a third party was mixed with a toluene solution to prepare a 2 mg / ml solution; then, 50 μl of the solution was added dropwise to the spin-coated substrate prepared in step (3) at a spin-coating speed of 6000 r / min for 30 s; finally, the substrate was placed on a hot plate for annealing at 100 °C for 10 min.

[0066] (5) Preparation of 3D perovskite film: The hole transport layer prepared in step (4) is used as a composite substrate; a 3D perovskite film is prepared on the composite substrate, as in Example 1.

[0067] (6) Preparation of 2D / 3D perovskite films using a transfer-assisted in-situ growth process; same as in Example 1.

[0068] (7) Preparation of FPSCs using transfer-assisted in-situ growth process: Same as Example 2.

[0069] Depend on Figure 8 As can be seen, the current density, open-circuit voltage, fill factor, and efficiency of FPSCs prepared using this process are significantly higher than those based on the reference flexible device. This demonstrates the reliability and repeatability of this process, and thus significantly improves the optoelectronic performance of flexible devices.

[0070] Depend on Figure 9 It can be seen that the FPSCs prepared by this process in the present invention were subjected to 10,000 cycles of bending test under the condition of a curvature radius of 3 mm, and there was no obvious attenuation of PCE, and the film had higher mechanical stability. This shows that high-quality 2D / 3D perovskite films were prepared based on this process in the present invention, which can significantly improve the mechanical stability of flexible devices.

[0071] The preferred embodiments of the present invention are described in detail above in conjunction with the accompanying drawings. However, the present invention is not limited to the specific details in the above embodiments. Within the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the scope of protection of the present invention.

[0072] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any appropriate manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

[0073] In addition, the various embodiments of the present invention may be arbitrarily combined, and as long as they do not violate the concept of the present invention, they should also be regarded as the contents disclosed by the present invention.

Claims

1. A method for in-situ growth of 2D / 3D perovskite films using transfer-assisted in situ growth, characterized in that: The specific steps are as follows: Step 1, preparation of perovskite precursor; The specific steps are as follows: first, lead iodide (PbI2) is added to a solvent and stirred thoroughly to obtain a precursor solution 1; formamidine hydroiodide (FAI), methylamine hydroiodide (MAI), and methylamine hydrochloride (MACl) are mixed according to a stoichiometric ratio, and a solvent is added to the mixture and stirred thoroughly to obtain a precursor solution 2; Step 2: Casting and preparing the transfer template; The specific steps are as follows: polydimethylsiloxane (PDMS) and a curing agent are mixed in a mass ratio of 10:1 to obtain a PDMS prepolymer, which is then stirred thoroughly and centrifuged to remove internal bubbles; then, a clean silicon template is taken and the evenly mixed PDMS prepolymer is poured onto the silicon template and allowed to stand for a period of time until it self-levels to form a PDMS film; then, the PDMS film is placed in an oven for baking to solidify; then, the fully solidified PDMS film is peeled off from the silicon template to obtain a PDMS membrane; finally, the PDMS membrane is immersed in a cationic salt solution, removed and dried to obtain a transfer template; Step 3: Preparation of 3D perovskite film; The specific steps are as follows: first, the substrate is cleaned and dried; then, the mixed precursor solution 1 obtained in step 1 is spin-coated on the substrate and placed on a heating table for annealing; then, the mixed precursor solution 2 obtained in step 1 is spin-coated on the substrate that has just been annealed; finally, the substrate with the 3D perovskite film is placed on a heating table for annealing; Step 4: Preparation of 2D / 3D perovskite films by transfer-assisted in-situ growth process; The specific steps are as follows: first, the PDMS template with a cationic layer obtained in step 2 is covered on the 3D perovskite film obtained in step 3; then, both are placed in a nanoimprinter for hot embossing; finally, the top PDMS template is peeled off, and after cooling, the perovskite surface is cleaned with a cleaning solvent, and the substrate is placed on a heating table for annealing to obtain a 2D / 3D perovskite film with reduced interface and internal non-radiative defects and high-quality crystallization.

2. The method for in-situ growth of 2D / 3D perovskite thin films using transfer-assisted in situ growth according to claim 1, wherein: In the precursor solution 1 of step 1, the concentration of PbI2 is 1.3-1.6 mol / L; the solvent is a mixed solution of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), and the volume ratio of DMF:DMSO is 6:1-10:1; the stirring time is 2-10 hours; In the precursor solution 2 of step 1, the concentration of FAI is 0.4-0.8 mol / L, the concentration of MAI is 0.03-0.08 mol / L, and the concentration of MACl is 0.07-0.12 mol / L; the solvent is isopropyl alcohol (IPA); and the stirring time is 2 h-10 h.

3. The method for in-situ growth of 2D / 3D perovskite thin films using transfer-assisted in situ growth according to claim 1, wherein: The formamidine hydroiodide (FAI), methylamine hydroiodide (MAI), and methylamine hydrochloride (MACl) described in step 1 are mixed in a stoichiometric ratio of 50 mg:5 mg:5 mg to 90 mg:9 mg:9 mg.

4. The method for in-situ growth of 2D / 3D perovskite thin films using transfer-assisted in situ growth according to claim 1, wherein: In step 2, the PDMS is centrifuged at a speed of 4000-8000 r / min for 2-6 min and allowed to stand for 10-60 min until it is self-leveling. The baking temperature of the cured PDMS template used is 80–110°C, and the time is 1–5 h; the concentration of phenylbutylamine iodide (PhBAI) in the cationic salt solution is 1–6 mg / mL, the solvent in the cationic salt solution is isopropyl alcohol (IPA), and the immersion time is 10–60 s.

5. The method for in-situ growth of 2D / 3D perovskite thin films using transfer-assisted in situ growth according to claim 1, wherein: In step 3, the rotation speed of spin coating precursor solution 1 is 1000-4000 r / min, the time is 15-100 s; the annealing temperature is 50-150°C, and the time is 10-60 s; the rotation speed of spin coating precursor solution 2 is 2000-4000 r / min, the time is 20-50 s; the annealing temperature is 50-150°C, and the time is 5-30 min.

6. The method for in-situ growth of 2D / 3D perovskite thin films using transfer-assisted in situ growth according to claim 1, wherein: The hot stamping in step 4 is performed under a pressure of 2-6 MPa, a temperature of 80-160° C., and a time of 5-30 min.

7. The method for in-situ growth of 2D / 3D perovskite thin films using transfer-assisted in situ growth according to claim 1, wherein: The cleaning solvent is 2,2,2-trifluoroethanol, the cleaning speed is 2000-4000 r / min, and the time is 20-50 s; the annealing temperature is 50-150° C., the time is 5-20 min, and the cooling time is 3-10 min.

8. A method for preparing 2D / 3D perovskite films using a transfer-assisted in-situ growth process, characterized in that: The method is prepared by any one of claims 1 to 7.

9. Application of the 2D / 3D perovskite film prepared by the transfer-assisted in-situ growth process as claimed in claim 8 in organic-inorganic hybrid photovoltaic devices.

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