A thin-film thermal print head and a method for preparing the same

Abstract

An embodiment of the present invention discloses a thin-film thermal printhead and a manufacturing method thereof. The manufacturing method includes providing an insulating substrate; forming a glaze coating on one side of the insulating substrate, and the glaze coating includes a heat storage glaze coating and a substrate glaze coating; forming a resistance layer on the side of the glaze coating away from the insulating substrate; forming two electrode layers on the side of the resistance layer away from the insulating substrate, and the two electrode layers include a first electrode portion located on the side of the heat storage glaze coating away from the insulating substrate and a second electrode portion located on the side of the substrate glaze coating away from the insulating substrate; performing patterning etching on the resistance layer and the electrode layers; providing a first opening in the electrode layer on the side of the first electrode portion away from the resistance layer, and performing heat treatment on the resistance layer; providing a second opening in the electrode layer on the side of the first electrode portion close to the resistance layer, and exposing a part of the resistance layer through the first opening and the second opening. By using the manufacturing method provided by the embodiment of the present invention, the preparation period of the thin-film thermal printhead can be reduced.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of thermal printing, and particularly to a thin-film thermal print head and a manufacturing method thereof. Background Art

[0002] The heating substrate of the thin-film thermal print head includes an insulating substrate with an amorphous glaze coating formed on its surface. A heating resistor layer is provided on the amorphous glaze coating, and a conductor layer covers the heating resistor layer. During the manufacturing process, through photolithography technology, electrode leads are formed on the conductor layer, and a plurality of heating resistors arranged along the main printing direction are formed on the resistor layer. Then, a non-conductive material is used to form an insulating protective layer on the heating resistor and at least part of the electrode leads by sputtering. To prevent static electricity generated by friction between the thermal print head and the printing consumables during the printing process, a conductive protective layer is usually formed using a conductive material. For example, a composite material mainly composed of carbon and silicon carbide can be used to form a conductive protective layer with high wear resistance.

[0003] For the heating resistor layer of the above thermal print head, a thin film with a thickness not greater than 0.2 μm is usually formed by magnetron sputtering. Due to reasons such as interface mismatch, defects are likely to exist inside the sputtered heating resistor layer, resulting in a decrease in the resistance value of the heating resistor after being energized and heated, and the heat generation of the heating resistor exceeding the expected value, causing damage to the thermal print head. The common method is to eliminate the defects in the thin film by heat treatment. During heat treatment, to prevent excessive oxidation of the heating element protective layer, it is usually carried out under vacuum conditions. When heat treatment is carried out under vacuum conditions, since the heat dissipation path through convection is largely cut off, the time required for the heat treatment process to cool down usually takes several hours, resulting in a longer production cycle of the thermal print head. Summary of the Invention

[0004] Embodiments of the present invention provide a thin-film thermal print head and a manufacturing method thereof. By providing two electrode layers, two openings are made at the opening to ensure that the resistor layer is not in direct contact with the outside during heat treatment, reducing the cooling time of the resistor layer, and thus reducing the manufacturing cycle of the thin-film thermal print head.

[0005] In a first aspect, an embodiment of the present invention provides a manufacturing method of a thin-film thermal print head, including:

[0006] Providing an insulating substrate;

[0007] Forming a glaze coating on one side of the insulating substrate, the glaze coating including a heat storage glaze coating and a substrate glaze coating;

[0008] Forming a resistor layer on the side of the glaze coating away from the insulating substrate;

[0009] On the side of the resistance layer away from the insulating substrate, two electrode layers are formed. The two electrode layers include a first electrode section on the side of the heat storage glaze coating away from the insulating substrate and a second electrode section on the side of the substrate glaze coating away from the insulating substrate;

[0010] Patterning etching is performed on the resistance layer and the electrode layers;

[0011] A first opening is provided in the electrode layer on the side of the first electrode section away from the resistance layer, and the resistance layer is heat-treated;

[0012] A second opening is provided in the electrode layer on the side of the first electrode section close to the resistance layer. Along the thickness direction of the insulating substrate, the projection of the second opening and the projection of the first opening overlap and expose part of the resistance layer.

[0013] Optionally, the substrate glaze coating includes a first substrate section and a second substrate section. The first substrate section surrounds part of the heat storage glaze coating and the second substrate section;

[0014] The second electrode section includes a common electrode, a lead-out electrode, and a bonding electrode. The common electrode is located on the side of the first substrate section away from the insulating substrate, and the lead-out electrode and the bonding electrode are located on the side of the second substrate section away from the insulating substrate;

[0015] After patterning etching is performed on the resistance layer and the electrode layers, it further includes:

[0016] An interval blocking structure is formed on the side of the lead-out electrode away from the insulating substrate.

[0017] Optionally, providing a first opening in the electrode layer on the side of the first electrode section away from the resistance layer and heat-treating the resistance layer includes:

[0018] A first opening is provided in the electrode layer on the side of the first electrode section away from the resistance layer;

[0019] The resistance layer and the interval blocking structure are heat-treated simultaneously.

[0020] Optionally, after providing a second opening in the electrode layer on the side of the first electrode section close to the resistance layer, it further includes:

[0021] A protective layer is formed on the side of the electrode layer away from the insulating substrate. The protective layer includes an insulating protective layer and an anti-static protective layer.

[0022] Optionally, after forming a protective layer on the side of the electrode layer away from the insulating substrate, it further includes:

[0023] A packaging layer is formed on the side of the anti-static protection layer away from the insulating substrate.

[0024] In a second aspect, an embodiment of the present invention provides a thin-film thermal printing head, comprising:

[0025] An insulating substrate,

[0026] An enamel coating located on one side of the insulating substrate, the enamel coating comprising a heat storage enamel coating and a substrate enamel coating;

[0027] A resistance layer located on the side of the enamel coating away from the insulating substrate;

[0028] Two electrode layers located on the side of the resistance layer away from the insulating substrate, the two electrode layers comprising a first electrode section located on the side of the heat storage enamel coating away from the insulating substrate and a second electrode section located on the side of the substrate enamel coating away from the insulating substrate;

[0029] A first opening located in the electrode layer on the side of the first electrode section away from the resistance layer; a second opening located in the electrode layer on the side of the first electrode section close to the resistance layer, along the thickness direction of the insulating substrate, the projection of the first opening and the projection of the second opening overlap and expose part of the resistance layer.

[0030] Optionally, the electrode layer comprises a first electrode layer and a second electrode layer, the first electrode layer being located on the side of the second electrode layer close to the insulating substrate;

[0031] The material of the first electrode layer is at least one of aluminum, tungsten, titanium, molybdenum, silver or an alloy;

[0032] The material of the second electrode layer is aluminum.

[0033] Optionally, the substrate enamel coating comprises a first substrate section and a second substrate section, the first substrate section surrounding part of the heat storage enamel coating and the second substrate section;

[0034] The second electrode section comprises a common electrode, a lead-out electrode and a bonding electrode, the common electrode being located on the side of the first substrate section away from the insulating substrate, the lead-out electrode and the bonding electrode being located on the side of the second substrate section away from the insulating substrate;

[0035] The thin-film thermal printing head further comprises a spacer blocking structure located on the side of the lead-out electrode away from the insulating substrate;

[0036] The surface roughness of the spacer blocking structure is Ra, where 0.1 μm ≤ Ra ≤ 1 μm.

[0037] Optionally, the thin-film thermal print head further includes a protective layer;

[0038] The protective layer includes an insulating protective layer and an anti-static protective layer. The anti-static protective layer is located on a side of the insulating protective layer away from the electrode layer. Along the thickness direction of the insulating substrate, the boundary of the protective layer overlaps with the spacer blocking structure.

[0039] Optionally, the thin-film thermal print head further includes a packaging layer,

[0040] which is located on a side of the anti-static protective layer away from the insulating substrate;

[0041] Along the thickness direction of the insulating substrate, the projection of the packaging layer overlaps with the spacer blocking structure.

[0042] The method for manufacturing the thin-film thermal print head provided by the embodiment of the present invention includes first providing an insulating substrate; then forming a glaze coating on one side of the insulating substrate, and the glaze coating includes a heat storage glaze coating and a substrate glaze coating; then forming a resistance layer on a side of the glaze coating away from the insulating substrate, and the resistance layer includes a first resistance section located on a side of the heat storage glaze coating away from the insulating substrate and a second resistance section located on a side of the substrate glaze coating away from the insulating substrate; then forming two electrode layers on a side of the resistance layer away from the insulating substrate, and the two electrode layers include a first electrode section located on a side of the heat storage glaze coating away from the insulating substrate and a second electrode section located on a side of the substrate glaze coating away from the insulating substrate; and performing patterning etching on the resistance layer and the electrode layer; then forming a first opening in the first electrode section on a side away from the first resistance section, and performing heat treatment on the resistance layer; finally forming a second opening in the first electrode section on a side close to the first resistance section. Along the thickness direction of the insulating substrate, the projection of the second opening and the projection of the first opening overlap, and the first resistance section exposes the heating resistor body through the first opening and the second opening. By using the manufacturing method provided by the embodiment of the present invention, two electrode layers are provided. When performing heat treatment on the resistance layer, the first electrode section on a side close to the first resistance section is still retained at the position corresponding to the first opening of the resistance layer, that is, the resistance layer can be heat-treated under non-vacuum conditions, and the thermal environment can be cooled in time, reducing the cooling time of the resistance layer, and further reducing the manufacturing cycle of the thin-film thermal print head. Description of the Drawings

[0043] In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the introduced drawings are only the drawings of a part of the embodiments to be described by the present invention, rather than all the drawings. For those of ordinary skill in the art, other drawings can also be obtained according to these drawings without creative efforts.

[0044] Figure 1 It is a schematic flow chart of a method for manufacturing a thin-film thermal print head provided in the first embodiment of the present invention;

[0045] Figure 2 It is a schematic diagram of the manufacturing process of a thin-film thermal print head provided in the first embodiment of the present invention;

[0046] Figure 3 It is a top view schematic diagram of a thin-film thermal print head provided in the first embodiment of the present invention;

[0047] Figure 4 It is a schematic flow chart of a method for manufacturing a thin-film thermal print head provided in the second embodiment of the present invention;

[0048] Figure 5 It is a schematic diagram of the manufacturing process of a thin-film thermal print head provided in the second embodiment of the present invention;

[0049] Figure 6 It is a top view schematic diagram of a thin-film thermal print head provided in the second embodiment of the present invention;

[0050] Figure 7 It is a schematic structural diagram of a thin-film thermal print head provided in the third embodiment of the present invention;

[0051] Figure 8 It is a schematic structural diagram of another thin-film thermal print head provided in the fourth embodiment of the present invention. Detailed implementation manners

[0052] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0053] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a system, product or device including a series of units does not necessarily have to be limited to those units clearly listed, but may include other units not clearly listed or inherent to these products or devices.

[0054] Embodiment 1

[0055] Figure 1 FIG. 1 is a schematic flow chart of a method for manufacturing a thin-film thermal print head provided in Embodiment 1 of the present invention. Figure 2 FIG. 2 is a schematic diagram of the manufacturing process of a thin-film thermal print head provided in Embodiment 1 of the present invention. Figure 3 FIG. 3 is a top view schematic diagram of a thin-film thermal print head provided in Embodiment 1 of the present invention. Referring to Figures 1 to 3 as shown, a method for manufacturing a thin-film thermal print head provided in an embodiment of the present invention includes:

[0056] S110. Provide an insulating substrate.

[0057] Among them, the material of the insulating substrate can be an aluminum oxide ceramic substrate, and the present invention does not specifically limit this in the embodiment. Exemplarily, referring to Figure 2 as shown, in the manufacture of a thin-film thermal print head, an insulating substrate 100 is first provided.

[0058] S120. Form a glaze coating on one side of the insulating substrate.

[0059] Among them, the glaze coating on one side of the insulating substrate includes a heat storage glaze coating and a substrate glaze coating. The material of the glaze coating can be glass glaze slurry, and the glaze coating is formed by sintering and curing the glass glaze slurry.

[0060] Exemplarily, referring to Figure 2 as shown, glass glaze slurry is coated on the insulating substrate 100 and sintered and cured to form a heat storage glaze coating 200a and a substrate glaze coating 200b, that is, the heat storage glaze coating 200a and the substrate glaze coating 200b cover the entire insulating substrate 100. The heat storage glaze coating 200a facilitates the accumulation of heat, facilitates the formation of the subsequent heating resistor and provides a placement space, and the substrate glaze coating 200b has the function of protecting the insulating substrate 100. Further, the thickness of the heat storage glaze coating 200a can be 20-50 μm, including 20 μm and 50 μm. If the thickness range of the heat storage glaze coating is set lower than 20 μm or greater than 50 μm, there may be problems of too fast or too slow heat dissipation, affecting the performance of the thermal print head. Further, a glass glaze slurry with a softening point temperature lower than that of the heat storage glaze coating 200a is used, and by means of printing and sintering, a substrate glaze coating 200b is formed in the space where the heat storage glaze coating 200a is not provided on the insulating substrate 100. The thickness of the substrate glaze coating 200b can be controlled between 2-15 μm, including 2 μm and 15 μm. If the thickness range of the substrate glaze coating 200b is set lower than 2 μm, there may be problems with poor surface conditions. If the thickness of the substrate glaze coating 200b is greater than 15 μm, the printing speed of the thermal print head may be reduced. The present invention does not specifically limit the specific thickness values of the heat storage glaze coating 200a and the substrate glaze coating 200b in the embodiment.

[0061] S130. A resistance layer is formed on the side of the glaze coating away from the insulating substrate.

[0062] Furthermore, a resistance layer is formed on the side of the glaze coating away from the insulating substrate. The resistance layer includes a resistance layer on the side of the heat storage glaze coating away from the insulating substrate and a resistance layer on the side of the substrate glaze coating away from the insulating substrate. And the resistance layer is a composite target formed by using a cermet target, such as materials like tantalum and silicon dioxide. By using the method of magnetron sputtering, a resistance layer is formed on the heat storage glaze coating, the substrate glaze coating, and the common conductor.

[0063] Furthermore, the substrate glaze coating includes a first substrate section and a second substrate section. The first substrate section surrounds part of the heat storage glaze coating and the second substrate section. It should be noted that the common conductor is prepared on the surface of the substrate glaze coating and is located on the side of the second resistance section close to the substrate glaze coating. The common conductor can use a thick film conductor paste, such as thick film silver paste. By using the method of printing and sintering, a common conductor is formed on the surface of the substrate glaze coating. The sheet resistance of the common conductor is preferably less than 5 mΩ per square. In this way, excessive voltage drop loss during the printing process can be prevented, which affects the printing uniformity of the heating substrate.

[0064] Exemplarily, referring to Figure 2 As shown, the substrate glaze coating 200b includes a first substrate section 200b1 and a second substrate section 200b2. A common conductor 200c is formed on the side of the first substrate section 200b1 away from the insulating substrate 100. Furthermore, a resistance layer 300 is formed. Specifically, a second resistance layer 300B is formed on the side of the first substrate section 200b1, the second substrate section 200b2, and the common conductor 200c away from the insulating substrate 100. At the same time, a first resistance layer 300A is formed on the side of the heat storage glaze coating 200a away from the insulating substrate 100. The first resistance layer 300A and the second resistance layer 300B are prepared in the same layer. The difference in naming is only used to show the different positions of the resistance layer 300 in the glaze coating 200. The embodiments of the present invention do not specifically limit this. Furthermore, the thickness of the resistance layer 300 can be 0.03 - 0.2 μm, including 0.03 μm and 0.2 μm. The setting of the thickness range of the resistance layer 300 is as follows: if the thickness is less than 0.03 μm, there may be a problem that the electrical shock resistance of the resistance layer 300 is insufficient due to the too low thickness. If the thickness is greater than 0.2 μm, there is likely to be a problem of too low production efficiency. The embodiments of the present invention do not specifically limit the thickness value of the resistance layer 300.

[0065] S140. Two electrode layers are formed on the side of the resistance layer away from the insulating substrate.

[0066] Further, two electrode layers are formed on the side of the resistance layer away from the insulating substrate. The electrode layer includes a first electrode section and a second electrode section. The first electrode section is located on the side of the heat storage glaze coating away from the insulating substrate, and the second electrode section is located on the side of the substrate glaze coating away from the insulating substrate. And the electrode layer is formed on the resistance layer by using a metal target, such as a tungsten-titanium alloy target, by means of magnetron sputtering. Further, more than two electrode layers can also be formed on the side of the resistance layer away from the insulating substrate.

[0067] Exemplarily, referring to Figure 2 As shown, two electrode layers 400 (410 and 420 in the figure) are prepared on the side of the resistance layer 300 away from the insulating substrate 100. A first electrode section (410A and 420A in the figure) is formed on the side of the heat storage glaze coating 200a away from the insulating substrate 100, and a second electrode section (410B and 420B in the figure) is formed on the side of the substrate glaze coating 200b away from the insulating substrate 100. Further, the first electrode layer 410 can be formed by using a target made of at least one or two or more alloys of aluminum, tungsten, titanium, molybdenum, silver, etc., such as a tungsten-titanium alloy target. By means of magnetron sputtering, the electrode layer 400 is formed on the resistance layer 300. The thickness of the electrode layer 400 can be 10 - 200 nm, including 10 nm and 200 nm. The setting of the thickness range of the electrode layer 400, if less than 10 nm, may have the problem that the film is discontinuous and cannot prevent the resistance layer 300 from being oxidized at high temperatures. If the thickness is greater than 200 nm, it is easy to cause the problem of reduced production efficiency. At the same time, the second electrode layer 420 can be formed on the first electrode layer 410 by using an aluminum target by means of magnetron sputtering, and the thickness of the second electrode layer 420 is 0.5 - 1 μm, including 0.5 μm and 1 μm. The setting of the thickness range of the second electrode layer 420, if the thickness is below 0.5 μm, may have the problem of insufficient bonding strength in the subsequent process. If the thickness exceeds 1 μm, it is easy to have the problem that the protective layer shielding is poor, resulting in the failure of the heat-sensitive print head heating substrate. The embodiment of the present invention does not specifically limit the thickness value of the electrode layer 400.

[0068] S150: Pattern etching is performed on the resistance layer and the electrode layer.

[0069] Further, pattern etching is performed on the resistance layer and the electrode layer. Among them, multiple electrode layers can be formed for the first electrode section, and multiple electrode lines can be formed for the second electrode section. The resistance layer and the electrode layer are etched by using a synchronous etching process. Then, along the thickness direction of the insulating substrate, the positions of the etched resistance layer and the electrode layer coincide. Exemplarily, referring to Figure 3 As shown. Further, the pattern etching of the electrode layer and the resistance layer can be carried out by using the same etching process, which can further reduce the preparation process time of the thin-film thermal print head.

[0070] S160. A first opening is provided in the electrode layer on the side of the first electrode division away from the resistance layer, and the resistance layer is heat-treated.

[0071] Furthermore, if the electrode layer prepared in the embodiment of the present invention has two layers, there are also two first electrode divisions on the side of the resistance layer away from the insulating substrate. An opening design is carried out on the first electrode division on the side away from the resistance layer, that is, a first opening is provided in the first electrode division. In the thickness direction of the insulating substrate, the resistance layer is not exposed at the first opening, that is, there is still one first electrode division. In this case, when heat-treating the resistance layer, it is not necessary to place the thin-film thermal print head during the manufacturing process in a vacuum environment, that is, oxygen in the air will not have an impact such as oxidation on the resistance layer, and the cooling time in a non-vacuum environment after heat treatment will be shortened, thereby reducing the manufacturing cycle.

[0072] Exemplarily, referring to Figure 2 As shown, in the two electrode layers 400, a first opening K1 exists in the first electrode division 420A of the second electrode layer 420 on the side away from the insulating substrate 100, while at this time, no opening design is carried out on the first electrode division 410A of the first electrode layer 410 on the side close to the insulating substrate 100, so the resistance layer 300 is not exposed to the external environment. When heat-treating in a non-vacuum environment to eliminate defects in the resistance layer 300, external oxygen, water vapor, etc. will not have an impact on the resistance layer 300, that is, the first resistance layer 300A. And when heat-treating under non-vacuum conditions, it can also ensure that after the heat treatment process is completed, it cools down as soon as possible, reducing the cooling cycle, thereby reducing the manufacturing cycle of the thin-film thermal print head.

[0073] S170. A second opening is provided in the electrode layer on the side of the first electrode division close to the resistance layer.

[0074] Furthermore, if the electrode layer prepared in the embodiment of the present invention has two layers, there are also two first electrode divisions on the side of the resistance layer away from the insulating substrate. After an opening design is carried out on the first electrode division on the side away from the resistance layer and a first opening is provided in the first electrode division, an opening design is also carried out on the first electrode division on the side close to the first resistance division, that is, a second opening is formed. Therefore, in the thickness direction of the insulating substrate, through the first opening and the second opening, a part of the resistance layer is exposed through the first opening and the second opening, and the exposed resistance layer is the heating resistor body.

[0075] Exemplarily, referring to Figure 2As shown, in the two-layer electrode layer 400, a first opening K1 exists in the first electrode branch 420A of the second electrode layer 420 on the side far from the insulating substrate 100, and a second opening K2 exists in the first electrode branch 410A of the first electrode layer 410 on the side close to the insulating substrate 100. Therefore, the heating resistor body 300C of the resistor layer 300 is exposed to the external environment. The heat generated by the heating resistor body 300C can be dissipated through the first opening K1 and the second opening K2. Exemplarily, if the material of the second electrode layer 420 is tungsten titanium alloy, hydrogen peroxide with a concentration of about 30% can be heated to 40 - 50 °C to etch the structure of the second electrode layer 420 in the second opening K2 corresponding to the first opening K1, and then it is cleaned and dried.

[0076] In summary, for the method for manufacturing a thin-film thermal print head provided in the embodiment of the present invention, by providing electrode layers on both sides, when the resistor layer is heat-treated, the first electrode branch close to the resistor layer side is still retained at the position corresponding to the first opening in the resistor layer, that is, the resistor layer can be heat-treated under non-vacuum conditions, and the thermal environment can be cooled in a timely manner, reducing the cooling time of the resistor layer, and further reducing the manufacturing cycle of the thin-film thermal print head.

[0077] Embodiment 2

[0078] Figure 4 is a schematic flow chart of a method for manufacturing a thin-film thermal print head provided in Embodiment 2 of the present invention. Figure 5 is a schematic diagram of the manufacturing process of a thin-film thermal print head provided in Embodiment 2 of the present invention. Figure 6 is a top view schematic diagram of a thin-film thermal print head provided in Embodiment 2 of the present invention. Refer to Figures 4 to 6 As shown, a method for manufacturing a thin-film thermal print head provided in an embodiment of the present invention further includes:

[0079] S210. Provide an insulating substrate.

[0080] S220. Form an enamel coating on one side of the insulating substrate.

[0081] S230. Form a resistor layer on the side of the enamel coating far from the insulating substrate.

[0082] S240. Form two-layer electrode layers on the side of the resistor layer far from the insulating substrate.

[0083] S250. Perform patterning etching on the resistor layer and the electrode layers.

[0084] Among them, the electrode layer includes a first electrode part and a second electrode part. The second electrode part forms a lead-out electrode and a bonding electrode on the side of the second substrate part away from the insulating substrate. The bonding electrode is located on the side of the lead-out electrode away from the heating resistor body. The second electrode part forms a common electrode on the side of the first substrate part away from the insulating substrate. The bonding electrode can be used as a pad to be electrically connected to the IC to achieve the driving effect of the external circuit or the control effect of the external circuit. The embodiments of the present invention do not specifically limit this. Exemplarily, referring to Figure 6 as shown, after the second electrode part is patterned and etched, a lead-out electrode 430, a bonding electrode 450, and a common electrode 440 are formed.

[0085] S260. A spacer blocking structure is formed on the side of the lead-out electrode away from the insulating substrate.

[0086] Furthermore, a spacer blocking structure is formed on the side of the lead-out electrode away from the insulating substrate. The spacer blocking structure can prevent the subsequently prepared electrically conductive film layer from interfering with the electrode layer, ensuring the working stability of the thin-film thermal print head. Exemplarily, referring to Figure 5 and Figure 6 as shown, a spacer blocking structure 500 is formed on the side of the lead-out electrode 430 away from the insulating substrate 100. Furthermore, in the subsequent preparation process, a protective layer, such as an insulating protective layer and an anti-static protective layer, will be provided on the side of the electrode layer 400 away from the insulating substrate 100. To prevent the conductive film layer at the end of the protective layer from contacting the electrode layer 400, the spacer blocking structure 500 is provided to ensure the safety protection effect of the subsequently prepared protective layer and also ensure the normal and stable operation of the thin-film thermal print head.

[0087] S270. A first opening is provided in the electrode layer on the side of the first electrode part away from the resistor layer.

[0088] S280. The resistor layer and the spacer blocking structure are heat-treated simultaneously.

[0089] Exemplarily, the spacer blocking structure can be made of low-temperature glass paste and requires sintering and curing treatment. The resistor layer also needs heat treatment to remove internal defects. That is, the resistor layer and the spacer blocking structure are heat-treated simultaneously, which can further reduce the preparation process cycle of the thin-film thermal print head and reduce the preparation cost.

[0090] Exemplarily, a chain sintering furnace can be used to sinter the insulating substrate 100. The set temperature for sintering is 10 - 30 °C higher than the softening point of the low-temperature glass paste used for the spacer barrier structure. For example, if the softening point temperature of the low-temperature glass paste is 380 °C, the sintering temperature can be set to 400 °C, and the duration of high-temperature heat preservation is 15 minutes, so that the glass paste forming the spacer barrier structure is fully melted at a temperature higher than the softening point. The surface roughness of the formed spacer barrier structure can be controlled between 0.1 - 1 μm. The setting of the surface roughness range of the spacer barrier structure, if it is lower than 0.1 μm, may cause problems such as insufficient adhesion of the subsequent protective layer. If the roughness is greater than 1 μm, it is likely to lead to problems such as low density of the protective layer on the spacer barrier structure. In the embodiments of the present invention, the numerical value of the roughness of the spacer barrier structure is not specifically limited.

[0091] S290. A second opening is provided in the electrode layer on the side close to the resistance layer in the first electrode division.

[0092] S2100. A protective layer is formed on the side of the electrode layer away from the insulating substrate.

[0093] Among them, a protective layer is formed on the side of the electrode layer away from the insulating substrate. The protective layer includes an insulating protective layer and an anti-static protective layer. The insulating protective layer is located on the side of the electrode layer away from the insulating substrate, and the anti-static protective layer is located on the side of the insulating protective layer away from the electrode layer. The protective layer protects the electrode layer, and the anti-static protective layer can also prevent the electrode layer from being interfered by static electricity, thereby ensuring the stability of the operation of the thin-film thermal print head.

[0094] Among them, the anti-static protective layer has a conductive function. To avoid the situation of short circuit caused by direct contact between the anti-static protective layer and the electrode layer, the edges of the insulating protective layer and the anti-static protective layer can be staggered by a certain distance, so that the protection range of the anti-static protective layer is smaller than that of the insulating protective layer.

[0095] Exemplarily, refer to Figure 5As shown in the figure, a protective layer 600 is prepared on the side of the electrode layer 400 away from the insulating substrate 100. The protective layer 600 includes an insulating protective layer 610 and an anti-static protective layer 620. Further, the fixture with the insulating substrate 100 can be placed in a vacuum film-forming device, such as a magnetron sputtering film-forming equipment, to form a protective layer 600 composed of the insulating protective layer 610 and the anti-static protective layer 620. The boundary e1 of the insulating protective layer 610 and the boundary e2 of the anti-static protective layer 620 are located at different positions on the spacer blocking structure 500, that is, staggered by a certain distance. Due to the function of the spacer blocking structure 500, it will not cause a short circuit between the second electrode distribution and the anti-static protective layer 620, playing a role of safety insurance. At the same time, the boundary e2 of the anti-static protective layer 620 is located at the insulating protective layer 610, and the boundary e1 of the insulating protective layer 610 is located at the spacer blocking structure 500. The insulating substrate 100 can be clamped once with a fixture. After the insulating protective layer 610 is formed, the anti-static protective layer 620 can be directly deposited without using different fixtures for two clamps, which is beneficial to reducing the manual operation cost and is advantageous for the large-scale production of the insulating substrate of the thin-film thermal print head.

[0096] S2110. Form a packaging layer on the side of the anti-static protective layer away from the insulating substrate.

[0097] Exemplarily, the packaging layer can be formed by curing epoxy resin. Refer to Figure 5 and Figure 6 As shown in the figure, on the surface of the local area on the insulating substrate 100 where the protective layer 600 is not provided and the surface of the local area on the protective layer 600, an organic resin layer is formed by the method of printing and then heat curing. The organic resin layer covers at least the boundary e1 of the insulating protective layer 610 of the protective layer 600 on the spacer blocking structure 500. The thickness of the organic resin layer can be 2 - 50 μm. The setting of the thickness range of the organic resin layer may cause problems of insufficient protection strength when it is less than 2 μm, and may hinder the conveyance of the printing medium during the operation of the thermal print head when it is greater than 50 μm.

[0098] In summary, during the preparation process of the thin-film thermal print head provided by the embodiment of the present invention, synchronously heat-treating the spacer blocking structure and the resistance layer can reduce the preparation cycle of the thin-film thermal print head and reduce the preparation cost. At the same time, an anti-static protective layer, an insulating protective layer, and a packaging layer are added, further ensuring the working safety and stability of the thin-film thermal print head. Among them, the anti-static protective layer and the insulating protective layer can be prepared with the same fixture, which is beneficial to reducing the manual operation cost and is advantageous for the large-scale production of the insulating substrate for the thin-film thermal print head.

[0099] Embodiment 3

[0100] Based on the same inventive concept, the embodiment of the present invention also provides a thin-film thermal print head.Figure 7 FIG. Figure 7 is a schematic structural diagram of a thin-film thermal print head provided in Embodiment 3 of the present invention. As Figure 7 shown, a thin-film thermal print head 10 provided in an embodiment of the present invention includes: an insulating substrate 100, an enamel coating 200 located on one side of the insulating substrate 100, and the enamel coating 200 includes a heat storage enamel coating 200a and a substrate enamel coating 200b; a resistance layer 300 located on the side of the enamel coating 200 away from the insulating substrate 100; two electrode layers 400 (410 and 420 in the figure) located on the side of the resistance layer 300 away from the insulating substrate 100, and the two electrode layers 400 include a first electrode part (410A and 420A in the figure) located on the side of the heat storage enamel coating 200a away from the insulating substrate 100 and a second electrode part (410B and 420B in the figure) located on the side of the substrate enamel coating 200b away from the insulating substrate 100; a first opening K1 located in the electrode layer 400 on the side of the first electrode part (410A and 420A) away from the resistance layer 300; a second opening K2 located in the electrode layer 400 on the side of the first electrode part (410A and 420A) close to the resistance layer 300. Along the thickness direction of the insulating substrate 100, the projections of the first opening K1 and the second opening K2 overlap and expose a part of the resistance layer 300.

[0101] Specifically, the thin-film thermal print head 10 includes: an insulating substrate 100, an enamel coating 200, a resistance layer 300, and two electrode layers 400. The material of the insulating substrate 100 may be an aluminum oxide ceramic substrate, and the embodiment of the present invention does not specifically limit this. The enamel coating located on one side of the insulating substrate 100 includes a heat storage enamel coating 200a and a substrate enamel coating 200b. The material of the enamel coating may be glass enamel slurry, and the enamel coating is formed by sintering and curing the glass enamel slurry. Exemplarily, referring to Figure 7 FIG. Figure 7 shows that the thickness of the heat storage enamel coating 200a may be 20-50 μm, including 20 μm and 50 μm. If the thickness range of the heat storage enamel coating is set below 20 μm or greater than 50 μm, problems such as too fast or too slow heat dissipation may occur, affecting the performance of the thermal print head. Further, a glass enamel slurry with a softening point temperature lower than that of the heat storage enamel coating 200a is used, and by means of printing and sintering, a substrate enamel coating 200b is formed in the space of the insulating substrate 100 where the heat storage enamel coating 200a is not provided. The thickness of the substrate enamel coating 200b can be controlled between 2-15 μm, including 2 μm and 15 μm. If the thickness range of the substrate enamel coating 200b is set below 2 μm, problems such as poor surface state may occur. If the thickness of the substrate enamel coating 200b is greater than 15 μm, the printing speed of the thermal print head may be reduced. The embodiment of the present invention does not limit the specific thickness values of the heat storage enamel coating 200a and the substrate enamel coating 200b.

[0102] Furthermore, a resistance layer 300 is formed on the side of the glaze coating 200 away from the insulating substrate 100. The resistance layer 300 includes a resistance layer on the side of the heat storage glaze coating 200a away from the insulating substrate 100 and a resistance layer on the side of the substrate glaze coating 200b away from the insulating substrate 100. The resistance layer 300 is a composite target formed of a cermet target, such as materials like tantalum and silicon dioxide. Using the method of magnetron sputtering, the resistance layer 300 is formed on the heat storage glaze coating 200a, the substrate glaze coating 200b, and the common conductor 200c.

[0103] Furthermore, referring to Figure 7 As shown, the substrate glaze coating 200b includes a first substrate section 200b1 and a second substrate section 200b2. A common conductor 200c is formed on the side of the first substrate section 200b1 away from the insulating substrate 100. Further, the resistance layer 300 is formed. Specifically, a second resistance layer 300B is formed on the sides of the first substrate section 200b1, the second substrate section 200b2, and the common conductor 200c away from the insulating substrate 100. At the same time, a first resistance layer 300A is formed on the side of the heat storage glaze coating 200a away from the insulating substrate 100. The first resistance layer 300A and the second resistance layer 300B are prepared in the same layer. The difference in naming is only used to show the different positions of the resistance layer 300 in the glaze coating 200, and the embodiments of the present invention do not specifically limit this. Further, the thickness of the resistance layer 300 can be 0.03 - 0.2 μm, including 0.03 μm and 0.2 μm. For the setting of the thickness range of the resistance layer 300, if the thickness is less than 0.03 μm, there may be a problem that the electrical shock resistance of the resistance layer 300 is insufficient due to the too low thickness. If the thickness is greater than 0.2 μm, there is likely to be a problem of too low production efficiency. The embodiments of the present invention do not specifically limit the thickness value of the resistance layer 300.

[0104] Furthermore, referring to Figure 7As shown, two electrode layers 400 (410 and 420 in the figure) are prepared on the side of the resistance layer 300 away from the insulating substrate 100. A first electrode branch (410A and 420A in the figure) is formed on the side of the heat storage glaze coating 200a away from the insulating substrate 100, and a second electrode branch (410B and 420B in the figure) is formed on the side of the substrate glaze coating 200b away from the insulating substrate 100. Further, the first electrode layer 410 can be formed by using a target material made of at least one or two or more alloys of aluminum, tungsten, titanium, molybdenum, silver, etc., such as a tungsten-titanium alloy target material. By using the magnetron sputtering method, the electrode layer 400 is formed on the resistance layer 300. The thickness of the electrode layer 400 can be 10 - 200 nm, including 10 nm and 200 nm. The setting of the thickness range of the electrode layer 400, if less than 10 nm, may have the problem that the thin film is discontinuous and cannot prevent the resistance layer 300 from being oxidized at high temperatures. If the thickness is greater than 200 nm, it is easy to cause the problem of reduced production efficiency. At the same time, the second electrode layer 420 can be formed by using an aluminum target material and adopting the magnetron sputtering method on the first electrode layer 410, and the thickness of the second electrode layer 420 is 0.5 - 1 μm, including 0.5 μm and 1 μm. The setting of the thickness range of the second electrode layer 420, if the thickness is below 0.5 μm, may have the problem of insufficient bonding strength in the subsequent process. If the thickness exceeds 1 μm, it is easy to have the problem that the protective layer shielding is poor, resulting in the failure of the heating substrate of the thermal print head. The embodiments of the present invention do not specifically limit the thickness value of the electrode layer 400.

[0105] Further, the resistance layer 300 and the electrode layer 400 are patterned and etched. Among them, the first electrode branch can form multiple electrode layers, and the second electrode branch can form multiple electrode lines. The resistance layer 300 and the electrode layer 400 are etched by using a synchronous etching process. Then, along the thickness direction of the insulating substrate 100, the etched resistance layer 300 and the electrode layer 400 are in coincidence. Exemplarily, refer to Figure 7 shown. Further, the patterned etching of the electrode layer 400 and the resistance layer 300 can be carried out by using the same etching process, which can further reduce the preparation process time of the thin film thermal print head 10.

[0106] Further, refer to Figure 7As shown in the figure, in the two-layer electrode layer 400, a first opening K1 exists in the first electrode section 420A of the second electrode layer 420 on the side far from the insulating substrate 100. At this time, no opening design is carried out in the first electrode section 410A of the first electrode layer 410 on the side close to the insulating substrate 100. Therefore, the resistance layer 300 is not exposed to the external environment. When heat treatment is carried out in a non-vacuum environment to eliminate the defects in the resistance layer 300, external oxygen, water vapor, etc. will not affect the resistance layer 300, that is, the first resistance layer 300A. And when heat treatment is carried out under non-vacuum conditions, it can also ensure that after the heat treatment process is completed, it can be cooled down as soon as possible, reducing the cooling cycle, and further reducing the preparation cycle of the thin-film thermal print head 10. Optionally, the electrode layer 400 includes a first electrode layer 410 and a second electrode layer 420. The first electrode layer 410 is located on the side of the second electrode layer 420 close to the insulating substrate. Among them, the material of the first electrode layer 410 is at least one of aluminum, tungsten, titanium, molybdenum, silver or an alloy; the material of the second electrode layer 420 is aluminum.

[0107] Further, referring to Figure 7 As shown in the figure, in the two-layer electrode layer 400, a first opening K1 exists in the first electrode section 420A of the second electrode layer 420 on the side far from the insulating substrate 100, and a second opening K2 exists in the first electrode section 410A of the first electrode layer 410 on the side close to the insulating substrate 100. Therefore, the heating resistor body 300C of the resistance layer 300 is exposed to the external environment. The heat generated by the heating resistor body 300C can be dissipated through the first opening K1 and the second opening K2. Exemplarily, if the material of the second electrode layer 420 is a tungsten-titanium alloy, hydrogen peroxide with a concentration of about 30% can be heated to 40-50 °C to etch the structure of the second electrode layer 420 in the second opening K2 corresponding to the first opening K1, and then cleaned and dried.

[0108] In summary, in the thin-film thermal print head provided by the embodiment of the present invention, by setting the electrode layers on both sides, when heat treatment is carried out on the resistance layer, the resistance layer still retains the resistance layer on the side close to the first resistance section at the position corresponding to the first opening, that is, the resistance layer can be heat-treated under non-vacuum conditions, and the thermal environment can be cooled down in time, reducing the cooling time of the resistance layer, and further reducing the preparation cycle of the thin-film thermal print head.

[0109] Embodiment 4

[0110] Figure 8 is a schematic structural diagram of another thin-film thermal print head provided by the embodiment of the present invention. Referring to FIGS. 6 and Figure 8As shown, the substrate glaze coating 200b includes a first substrate section 200b1 and a second substrate section 200b2. The first substrate section 200b1 surrounds a part of the heat storage glaze coating 200a and the second substrate section 200b2. The second electrode section (420B and 410B in the figure) includes a common electrode 440, a lead-out electrode 430, and a bonding electrode 450. The common electrode 440 is located on the side of the first substrate section 200b1 away from the insulating substrate 100, and the lead-out electrode 430 and the bonding electrode 450 are located on the side of the second substrate section 200b2 away from the insulating substrate 100. The thin-film thermal printing head 10 further includes a spacer blocking structure 500, which is located on the side of the lead-out electrode 430 away from the insulating substrate 100. The surface roughness of the spacer blocking structure 500 is Ra, where 0.1 μm ≤ Ra ≤ 1 μm.

[0111] Among them, the electrode layer 400 includes a first electrode section (420A and 410A in the figure) and a second electrode section (420B and 410B in the figure). The second electrode section (420B and 410B in the figure) forms a lead-out electrode 430 and a bonding electrode 450 on the side of the second substrate section 200b2 away from the insulating substrate 100. The bonding electrode 450 is located on the side of the lead-out electrode 430 away from the heating resistor body 300C. The second electrode section (420B and 410B in the figure) forms a common electrode 440 on the side of the first substrate section 200b1 away from the insulating substrate 100. The bonding electrode 450 can be used as a pad to be electrically connected to the IC to achieve the driving effect of the external circuit or the control effect of the external circuit. The embodiments of the present invention do not specifically limit this. Exemplarily, refer to Figure 6 As shown, after patterning and etching the second electrode section, a lead-out electrode 430, a bonding electrode 450, and a common electrode 440 are formed.

[0112] Furthermore, a spacer blocking structure 500 is formed on the side of the lead-out electrode 430 away from the insulating substrate 100. Through the spacer blocking structure 500, it is possible to prevent the film layer that can conduct electricity prepared subsequently from interfering with the electrode layer, ensuring the working stability of the thin-film thermal printing head 10. Exemplarily, refer to Figure 6 and Figure 8 As shown, a spacer blocking structure 500 is formed on the side of the lead-out electrode 430 away from the insulating substrate 100. Furthermore, in the subsequent preparation process, a protective layer 600, such as an insulating protective layer 610 and an anti-static protective layer 620, will be provided on the side of the electrode layer 400 away from the insulating substrate 100. To prevent the film layer with conductivity at the end of the protective layer 600 from contacting the electrode layer 400, the spacer blocking structure 500 is provided to ensure the safety protection effect of the subsequent prepared protective layer and the normal and stable operation of the thin-film thermal printing head 10.

[0113] Furthermore, the spacer blocking structure 500 can be made of low-temperature glass paste and requires sintering and curing treatment. The resistor layer 300 also needs heat treatment to remove internal defects. By performing heat treatment on the resistor layer 300 and the spacer blocking structure 500 simultaneously, the preparation process cycle of the thin-film thermal print head 10 can be further reduced, and the preparation cost can be reduced.

[0114] Exemplarily, a chain sintering furnace can be used to sinter the insulating substrate 100. The set sintering temperature is 10-30°C higher than the softening point of the low-temperature glass paste used for the spacer blocking structure. For example, if the softening point temperature of the low-temperature glass paste is 380°C, the sintering temperature can be set to 400°C, and the duration of high-temperature heat preservation is 15 minutes. This allows the glass paste forming the spacer blocking structure to fully melt at a temperature above the softening point, and the surface roughness of the formed spacer blocking structure can be controlled between 0.1 and 1 μm. If the surface roughness range of the spacer blocking structure is set below 0.1 μm, there may be a problem of insufficient adhesion of the subsequent protective layer. If the roughness is greater than 1 μm, it is likely to cause a problem of low density of the protective layer on the spacer blocking structure. The embodiments of the present invention do not specifically limit the numerical value of the roughness of the spacer blocking structure.

[0115] Continue to refer to Figure 8 As shown, the thin-film thermal print head 10 further includes a protective layer 600; the protective layer 600 includes an insulating protective layer 610 and an anti-static protective layer 620. The anti-static protective layer 620 is located on the side of the insulating protective layer 610 away from the electrode layer 400. Along the thickness direction of the insulating substrate 100, the boundary e of the protective layer 600 overlaps with the spacer blocking structure 500.

[0116] Among them, a protective layer 600 is formed on the side of the electrode layer 400 away from the insulating substrate 100. The protective layer 600 includes an insulating protective layer 610 and an anti-static protective layer 620. The insulating protective layer 610 is located on the side of the electrode layer 400 away from the insulating substrate 100, and the anti-static protective layer 620 is located on the side of the insulating protective layer 610 away from the electrode layer 400. The protective layer 600 protects the electrode layer 400, and the anti-static protective layer 620 can also prevent the electrode layer 400 from being interfered by static electricity, thereby ensuring the stability of the operation of the thin-film thermal print head 10.

[0117] Among them, the anti-static protective layer 620 has a conductive function. To avoid the situation of direct contact and short circuit between the anti-static protective layer 620 and the electrode layer 400, the boundary e between the insulating protective layer 610 and the anti-static protective layer 620 can be offset by a certain distance, so that the protection range of the anti-static protective layer 620 is smaller than the protection range of the insulating protective layer 610.

[0118] Exemplarily, refer to Figure 8As shown in the figure, a protective layer 600 is prepared on the side of the electrode layer 400 away from the insulating substrate 100. The protective layer 600 includes an insulating protective layer 610 and an anti-static protective layer 620. Further, the fixture with the insulating substrate 100 can be placed in a vacuum film-forming device, such as a magnetron sputtering film-forming equipment, to form the protective layer 600 composed of the insulating protective layer 610 and the anti-static protective layer 620. The boundary e1 of the insulating protective layer 610 and the boundary e2 of the anti-static protective layer 620 are located at different positions on the spacer blocking structure 500, that is, staggered by a certain distance. Due to the function of the spacer blocking structure 500, a short circuit will not be formed between the second electrode part and the anti-static protective layer 620, which has the function of safety insurance. At the same time, the boundary e2 of the anti-static protective layer 620 is located at the insulating protective layer 610, and the boundary e1 of the insulating protective layer 610 is located at the spacer blocking structure 500. The insulating substrate 100 can be clamped once with a fixture. After the insulating protective layer 610 is formed, the anti-static protective layer 620 can be directly deposited without using different fixtures for secondary clamping, which is beneficial to reducing the manual operation cost and is beneficial to the large-scale production of the insulating substrate of the thin-film thermal print head.

[0119] Continue to refer to Figure 8 As shown in the figure, the thin-film thermal print head 10 further includes a packaging layer 700, which is located on the side of the anti-static protective layer 620 away from the insulating substrate 100; along the thickness direction of the insulating substrate 100, the projection of the packaging layer 700 overlaps with the spacer blocking structure 500.

[0120] Exemplarily, the packaging layer can be formed by curing epoxy resin. Refer to Figure 8 As shown in the figure, on the surface of the local area where the protective layer 600 is not provided on the insulating substrate 100 and the surface of the local area on the protective layer 600, an organic resin layer 700 is formed by the method of printing and then heating and curing. The organic resin layer 700 covers at least the boundary e of the insulating protective layer 610 of the protective layer 600 on the spacer blocking structure 500. The thickness of the organic resin layer 700 can be 2-50 μm. The setting of the thickness range of the organic resin layer is such that when it is less than 2 μm, the problem of insufficient protection strength is likely to occur, and when it is greater than 50 μm, it may interfere with the conveyance of the printing medium when the thermal print head is working, etc.

[0121] Note that the above is only the preferred embodiment of the present invention and the applied technical principle. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described here. Various obvious changes, re-adjustments and substitutions can be made by those skilled in the art without departing from the protection scope of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments. Without departing from the concept of the present invention, more other equivalent embodiments can be included, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A manufacturing method of a thin-film thermal print head, characterized in that, Comprising: Providing an insulating substrate; Forming a glaze coating on one side of the insulating substrate, the glaze coating including a heat storage glaze coating and a substrate glaze coating; Forming a resistance layer on the side of the glaze coating away from the insulating substrate; Forming two layers of electrode layers on the side of the resistance layer away from the insulating substrate, the two layers of electrode layers including a first electrode portion located on the side of the heat storage glaze coating away from the insulating substrate and a second electrode portion located on the side of the substrate glaze coating away from the insulating substrate; the substrate glaze coating includes a first substrate portion and a second substrate portion, the first substrate portion surrounds part of the heat storage glaze coating and the second substrate portion; the second electrode portion includes a common electrode, a lead-out electrode and a bonding electrode, the common electrode is located on the side of the first substrate portion away from the insulating substrate, and the lead-out electrode and the bonding electrode are located on the side of the second substrate portion away from the insulating substrate; After patterning and etching the resistance layer and the electrode layers, it further includes; Forming a spacer barrier structure on the side of the lead-out electrode away from the insulating substrate; Providing a first opening in the electrode layer on the side of the first electrode portion away from the resistance layer; Performing a heat treatment on the resistance layer and the spacer barrier structure simultaneously; Providing a second opening in the electrode layer on the side of the first electrode portion close to the resistance layer, along the thickness direction of the insulating substrate, the projection of the second opening and the projection of the first opening overlap and expose part of the resistance layer.

2. The manufacturing method according to claim 1, wherein After providing the second opening in the electrode layer on the side of the first electrode portion close to the resistance layer, it further includes: Forming a protective layer on the side of the electrode layer away from the insulating substrate, the protective layer including an insulating protective layer and an anti-static protective layer.

3. The manufacturing method according to claim 2, characterized in that, After forming the protective layer on the side of the electrode layer away from the insulating substrate, it further includes: Forming a packaging layer on the side of the anti-static protective layer away from the insulating substrate.

4. A thin-film thermal print head, characterized in that, Comprising: An insulating substrate, A glaze coating, located on one side of the insulating substrate, the glaze coating including a heat storage glaze coating and a substrate glaze coating; A resistance layer, located on the side of the glaze coating away from the insulating substrate; Two layers of electrode layers, located on the side of the resistance layer away from the insulating substrate, the two layers of electrode layers including a first electrode portion located on the side of the heat storage glaze coating away from the insulating substrate and a second electrode portion located on the side of the substrate glaze coating away from the insulating substrate; A first opening, located in the electrode layer on the side of the first electrode portion away from the resistance layer; A second opening, located in the electrode layer on the side of the first electrode portion close to the resistance layer, along the thickness direction of the insulating substrate, the projection of the first opening and the projection of the second opening overlap and expose part of the resistance layer; The substrate glaze coating includes a first substrate portion and a second substrate portion, the first substrate portion surrounds part of the heat storage glaze coating and the second substrate portion; The second electrode part includes a common electrode, a lead-out electrode, and a bonding electrode. The common electrode is located on the side of the first substrate part away from the insulating substrate, and the lead-out electrode and the bonding electrode are located on the side of the second substrate part away from the insulating substrate; The thin-film thermal printer head further includes a spacer blocking structure, which is located on the side of the lead-out electrode away from the insulating substrate; The surface roughness of the spacer blocking structure is Ra, where 0.1 μm ≤ Ra ≤ 1 μm.

5. The thermal thin-film print head according to claim 4, characterized in that, The electrode layer includes a first electrode layer and a second electrode layer. The first electrode layer is located on the side of the second electrode layer close to the insulating substrate; The material of the first electrode layer is at least one of aluminum, tungsten, titanium, molybdenum, silver or an alloy; The material of the second electrode layer is aluminum.

6. The thermal thin-film print head according to claim 4, wherein, The thin-film thermal printer head further includes a protective layer; The protective layer includes an insulating protective layer and an anti-static protective layer. The anti-static protective layer is located on the side of the insulating protective layer away from the electrode layer. Along the thickness direction of the insulating substrate, the boundary of the protective layer overlaps with the spacer blocking structure.

7. The thermal thin-film print head according to claim 6, wherein The thin-film thermal printer head further includes a packaging layer, which is located on the side of the anti-static protective layer away from the insulating substrate; Along the thickness direction of the insulating substrate, the projection of the packaging layer overlaps with the spacer blocking structure.

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