Solid state power amplifier with cooling capability

By using gallium nitride or gallium arsenide transistors in the substrate processing chamber and combining them with a liquid cooling plate, the problems of large size, high power consumption, and high noise in the existing SSPA technology are solved, achieving a substrate processing effect with low power consumption, low noise, and low heat.

CN115989718BActive Publication Date: 2026-06-19APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
APPLIED MATERIALS INC
Filing Date
2021-08-26
Publication Date
2026-06-19

AI Technical Summary

Technical Problem

Existing solid-state power amplifiers (SSPAs) suffer from problems such as large size, high power consumption, excessive noise and heat generation during substrate processing.

Method used

SSPAs employing gallium nitride (GaN) or gallium arsenide (GaAs) transistors, combined with liquid cooling plates, are used to cool the substrate processing chamber. This approach reduces power consumption and noise by combining microwave heating with liquid cooling.

Benefits of technology

It achieves low power consumption, low noise and low heat generation in the substrate processing process, improves processing efficiency and saves physical footprint.

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Abstract

Methods and apparatus for processing a substrate. For example, a processing chamber may include: a power source; an amplifier connected to the power source, the amplifier including at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and the amplifier being configured to amplify the power level of an input signal received from the power source to heat the substrate in the processing volume; and a cooling plate configured to receive a coolant to cool the amplifier during operation.
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Citation Information

Patent Citations

  • US20050160987A1

  • US20100210225A1