Substrate processing method and substrate processing apparatus

Abstract

Provided is a substrate processing method and substrate processing apparatus that enable optimization of the destaticizing process in processing of a substrate. The substrate processing method of a substrate processing apparatus includes: a step of delivering a substrate from a processing module that performs a plasma process and a destaticizing process on the substrate to a load lock portion that enables switching between an atmospheric atmosphere and a vacuum atmosphere; a step of measuring the charged state of the substrate in the load lock portion; and a step of analyzing the measurement result of the charged state of the substrate to optimize the destaticizing process.

Description

Technical Field

[0001] This invention relates to a substrate processing method and a substrate processing apparatus. Background Technology

[0002] When a substrate carries a significant amount of charge, there is a risk of damage to devices mounted on the substrate (electrostatic discharge), or breakage when the substrate is detached from the mounting stage using electrostatic force. Therefore, electrostatic discharge (ESD) treatment to reduce the charge on the substrate has been necessary. For example, Patent Document 1 discloses a technique that performs ESD treatment on a charged substrate when it is fed into a substrate processing system, thereby reducing the substrate's charge state.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-107077 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] This invention provides a technique that optimizes the static electricity removal process of substrates.

[0008] Technical means to solve the problem

[0009] According to one aspect of the present invention, a substrate processing method of a substrate processing apparatus is provided, comprising: a step of sending the substrate out from a processing module that performs plasma processing and static electricity removal processing on the substrate, and conveying the substrate to a load locking unit capable of switching between an atmospheric atmosphere and a vacuum atmosphere; a step of measuring the charge state of the substrate at the load locking unit; and a step of analyzing the measurement results of the charge state of the substrate to optimize the static electricity removal processing.

[0010] Invention Effects

[0011] Based on one aspect, the static electricity removal process of the substrate can be optimized. Attached Figure Description

[0012] Figure 1 This is a top view that schematically illustrates one embodiment of a substrate processing apparatus.

[0013] Figure 2 It is a schematic side cross-sectional view showing a portion of the load locking part and the conveying device.

[0014] Figure 3 It is a diagram showing the change in the charged state that occurs during the transport process of the substrate in the load locking section.

[0015] Figure 4 This is a table illustrating part of a static electricity removal process.

[0016] Figure 5 This is a flowchart of the substrate processing method of the first embodiment.

[0017] Figure 6 This is a flowchart of the substrate processing method according to the second embodiment.

[0018] Figure 7 This is a flowchart of the substrate processing method according to the fourth embodiment.

[0019] Explanation of reference numerals in the attached figures

[0020] 1. Substrate processing device

[0021] Processing modules 10, 11, and 12

[0022] 20 Vacuum Conveying Module

[0023] 21 Conveying device

[0024] 27 Contacts

[0025] 30 Load locking unit

[0026] 37 Buffer Section

[0027] 39 Support pin

[0028] 40. Live Measurement Section

[0029] 60 Control Department

[0030] S substrate Detailed Implementation

[0031] Embodiments of the present invention will now be described with reference to the accompanying drawings. Identical components in the drawings are labeled with the same reference numerals, and repeated descriptions may be omitted.

[0032] Figure 1 This is a top view schematically illustrating one embodiment of the substrate processing apparatus 1. (e.g.) Figure 1As shown, the substrate processing apparatus 1 is configured as a multi-chamber system, having multiple (three in this embodiment) processing modules 10, 11, and 12 for performing plasma processing on the substrate S. In a top view, the substrate processing apparatus 1 has a square vacuum delivery module 20 positioned in the center. Furthermore, the substrate processing apparatus 1 has processing modules 10, 11, and 12 arranged on three sides of the vacuum delivery module 20, and a load locking part 30 arranged on the remaining side of the vacuum delivery module 20. The processing modules 10, 11, and 12, the vacuum delivery module 20, and the load locking part 30 are all chamber containers capable of operating under a reduced pressure atmosphere (vacuum atmosphere). In addition, the substrate processing apparatus 1 also includes a control unit 60 for controlling the operation of each part.

[0033] The substrate S processed by the substrate processing apparatus 1 can be, for example, a substrate for an FPD (Flat Panel Display) such as a liquid crystal display or an organic EL display. In this case, the material of the substrate S can be glass or synthetic resin. The substrate S can include a substrate with circuit patterns formed on its surface, or a support substrate without circuits. The planar dimensions of the substrate S are not particularly limited, but rectangular substrates with a long side of about 1800 mm to 3400 mm, a short side of about 1500 mm to 3000 mm, or other sizes can be included.

[0034] An opening 10a, 11a, or 12a is provided between the vacuum transport module 20 and each of the processing modules 10, 11, or 12, allowing the substrate S to pass through. Furthermore, each substrate processing device 1 includes gate valves 13, 14, and 15 that open and close each of the openings 10a, 11a, or 12a. Each gate valve 13, 14, or 15 can, when closed, airtightly seal the vacuum transport module 20 with each of the processing modules 10, 11, or 12, and when open, connect the vacuum transport module 20 with each of the processing modules 10, 11, or 12 to transport the substrate S.

[0035] Each processing module 10, 11, and 12 is a container capable of maintaining its respective internal space 10s, 11s, and 12s (substrate processing chamber: processing chamber) at a predetermined reduced pressure atmosphere (vacuum atmosphere) to perform plasma treatment on the substrate S transported into the internal space 10s, 11s, and 12s. Each processing module 10, 11, and 12 is provided with a mounting stage 16 for placing the substrate S. The mounting stage 16 may have, for example, an electrostatic chuck (not shown) that holds the substrate S using electrostatic force. Each processing module 10, 11, and 12 performs plasma treatments such as etching, ashing, and film formation on the substrate S fixed to the mounting stage 16. Furthermore, the method of fixing the substrate to the mounting stage 16 is not particularly limited to an electrostatic chuck; mechanical clamps or the like can also be used. Each processing module 10, 11, and 12 in the substrate processing apparatus 1 can perform the same type of plasma treatment, or different types of plasma treatment can be performed by each processing module 10, 11, and 12.

[0036] In addition, each processing module 10, 11, and 12 performs static electricity removal treatment on the substrate S, which becomes charged due to plasma processing, etc. For example, as a static electricity removal treatment, each processing module 10, 11, and 12 can use a method such as applying a DC voltage of the same magnitude but opposite in sign to the voltage originally applied to the adsorption electrode (not shown) embedded in the electrostatic chuck to eliminate the charge on the substrate S. Alternatively, each processing module 10, 11, and 12 can also use a method of generating plasma for static electricity removal treatment to eliminate the charge on the substrate S.

[0037] The vacuum transport module 20 is configured as a container capable of maintaining a specified vacuum atmosphere. The vacuum transport module 20 has a transport device 21 within its internal space (transport chamber). The transport device 21 transports the substrate S between the vacuum transport module 20 and each of the processing modules 10, 11, and 12, and between the vacuum transport module 20 and the load locking part 30.

[0038] The conveying device 21 includes a base 22, a conveying arm 23 supported on the base 22, and an actuation unit 24 for rotating, moving up and down, and moving forward and backward on the conveying arm 23. The conveying arm 23 has a fork 25 at its end effector capable of holding the lower surface of the substrate S. The actuation unit 24 is connected to a control unit 60 and actuates the conveying arm 23 based on the actuation commands from the control unit 60. During the actuation of the conveying arm 23, the fork 25 enters the interior of each processing module 10, 11, 12 or the load locking unit 30 to deliver or receive the substrate S. Furthermore, the fork 25 can retract from each processing module 10, 11, 12 or the load locking unit 30 after delivering or receiving the substrate S.

[0039] Figure 2This is a schematic side cross-sectional view showing a portion of the load locking part 30 and the conveying device 21. (See diagram below.) Figure 1 and Figure 2 As shown, the fork 25 includes multiple support pickup portions 26 and multiple contact members 27 disposed on the upper surface of each support pickup portion 26, which are in direct contact with the substrate S. Each contact member 27 is formed of a material that is softer than the support pickup portion 26, has frictional force, and is conductive. For example, a ring-shaped component made of conductive rubber can be used as the contact member 27. Alternatively, the contact member 27 can also be a protruding component. The conveying device 21 is connected to a ground potential and can move the charge on the substrate S via each contact member 27, the support pickup portion 26, and the conveying arm 23 when conveying the substrate S. If the contact member 27 is not deteriorated and is in a state of sufficient conductivity, even if the charge remaining on the substrate S is not completely removed during the destatic treatment inside each processing module 10, 11, 12, it can be supplemented to a sufficiently low charge level during the conveying of the substrate S.

[0040] Back Figure 1 The substrate processing apparatus 1 has an opening 30a between the vacuum transport module 20 and the load locking part 30 for the substrate S to pass through, and a gate valve 31 for opening and closing the opening 30a. In the closed state, the gate valve 31 airtightly seals the vacuum transport module 20 and the load locking part 30; in the open state, it connects the vacuum transport module 20 and the load locking part 30, allowing the substrate S to be transported. Additionally, the substrate processing apparatus 1 has an opening 30b and a gate valve 32 between the load locking part 30 and its outer side. In the closed state, the gate valve 32 maintains the airtightness of the load locking part 30; in the open state, it connects the load locking part 30 to its outer side, allowing the substrate S to be transported.

[0041] Outside the load locking part 30, a loading module 50, separately provided relative to the substrate processing device 1, is connected to enable the feeding and unloading of the substrate S with respect to the load locking part 30. The loading module 50 performs standby, transport, and other functions of the substrate S in atmospheric conditions. The loading module 50 is not particularly limited; for example, a structure can be used that includes a carrier holding multiple substrates S, an empty carrier (neither shown), and a transport mechanism 51 capable of placing / removing substrates S relative to each carrier. Alternatively, the loading module 50 can also be a mechanism (not shown) that receives substrates S from other processing devices located around the substrate processing device 1 and delivers the substrates S to those other processing devices.

[0042] The load locking unit 30 (load locking module) of the substrate processing apparatus 1 handles the transfer of the substrate S between the loading module 50 in an atmospheric atmosphere and the vacuum transport module 20 in a vacuum atmosphere. Therefore, the load locking unit 30 is configured as a container capable of maintaining a specified vacuum atmosphere. This load locking unit 30 is formed with a small volume so that it can be repeatedly switched between an atmospheric atmosphere and a vacuum atmosphere.

[0043] like Figure 1 and Figure 2 As shown, the container of the load locking part 30 includes a plurality of side wall portions 33 provided in the direction of arrow A, an opening portion 30a and an opening portion 30b provided in the direction of arrow B, a bottom 34 connected to each side wall portion 33, and a top 35 supported by each side wall portion 33, and is connected to the ground potential. In the pair of opening portions 30a and 30b that are opposite to each other in the direction of arrow B, opening portion 30a has a gate valve 31, and opening portion 30b has a gate valve 32.

[0044] At the bottom 34 of the load locking part 30, a substrate support part 36 is provided to support the substrate S within the space 30s (load locking chamber) of the load locking part 30. The upper surface of the substrate support part 36 is formed with alternating buffer parts 37 (support parts) and grooves 38 along the direction of arrow A. The plurality of grooves 38 are arranged in a straight line so that each support pickup part 26 of the conveying device 21 (fork 25) can enter.

[0045] Additionally, multiple support pins 39 (support members) are provided on the upper surface of the multiple buffer portions 37, which contact the substrate S to support the substrate S when the fork 25 descends. The support pins 39 are formed of a conductive material. As a result, the load locking portion 30 can move the residual charge on the substrate S to the outside of the load locking portion 30 via the support pins 39, the substrate support portion 36, and the bottom 34.

[0046] Additionally, the load locking unit 30 has a charge measurement unit 40 at its top 35 for measuring the charge state of the substrate S. In this embodiment, the "charge state" of the substrate S is measured as the voltage (surface potential) of the electrostatic force generated on the substrate S. The "charge state" measured by the charge measurement unit 40 is not limited to surface potential; for example, it can also measure the amount of charge, potential difference, electric field, and other physical stresses (piezoelectricity, etc.) of the substrate S.

[0047] The live-line measuring unit 40 is positioned at a point slightly off-center from the direction of arrow B, closer to the vacuum delivery module 20 (near the gate valve 31). Additionally, Figure 2 The diagram shows one charged measurement unit 40, but the load locking unit 30 can also have a structure with multiple charged measurement units 40. For example, the substrate processing apparatus 1 can measure the charged measurement unit 40 by moving along the load locking unit 30 along the load locking unit 40. Figure 1Multiple charged measurement units 40 are arranged in the direction of arrow A, as shown, and can obtain the distribution of the charged state of the entire surface as the substrate S is transported in the direction of arrow B.

[0048] The charge measurement unit 40 can utilize a sensor capable of measuring the charge state of the substrate S under a vacuum atmosphere in the space section 30s. This is because the charge state of the substrate S changes when the space section 30s is in an atmospheric atmosphere. The charge measurement unit 40 utilizes electrostatic induction to obtain the surface potential by measuring the induced charge generated on the sensor due to the electric field formed by the charged object when the sensor is near it. For example, the charge measurement unit 40 includes a measurement body 41 with an amplification circuit fixed to the top 35, and a probe 43 disposed inside the load locking section 30, hanging down from the measurement body 41 via a wiring 42. The measurement body 41 is communicatively connected to the control unit 60, transmitting the measurement result (charge state information) to the control unit 60. The probe 43 is disposed inside or below the top 35, close to the transported substrate S. Therefore, the charge measurement unit 40 can improve the detection accuracy of the surface potential of the substrate S.

[0049] Figure 3 This is a graph showing the change in the charged state that occurs during the transport process of the substrate S in the load locking section 30. In this graph, the horizontal axis represents time, and the vertical axis represents the surface potential measured on the substrate S. Figure 3 As shown, the charged measurement unit 40 can measure the surface potential of the substrate S throughout the entire transport process, from the vacuum transport module 20 to the load locking unit 30 and supported by the substrate support unit 36.

[0050] In detail, the substrate S transport process includes: a feeding step in which the substrate S is fed in using the fork 25; a lowering step in which the fork 25 is lowered; a transfer step in which the substrate S is transferred from the fork 25 to the buffer section 37; and a supporting step in which the fork 25 is removed and the substrate S is supported by the buffer section 37. During the transport of the substrate S, the interior of the load locking section 30 is depressurized to the same vacuum atmosphere as that of each processing module 10, 11, 12 and the vacuum transport module 20. The charge measurement section 40 measures the changing charge state of the substrate S at each step of the transport process (feeding step, lowering step, transfer step, supporting step).

[0051] In particular, the charged state of the substrate S measured during the support step where the substrate S is supported by the substrate support section 36 represents the final charged state of the substrate S after being processed in the substrate processing apparatus 1 and undergoing static electricity removal in each step. That is, the substrate S will be processed in this charged state before the next processing step. However, the charged state at the beginning of the support step may be unstable, so the control unit 60 can use the measurement results after a predetermined time has elapsed since the start of the support step. Furthermore, as... Figure 3 As shown, the surface potential (charge state of substrate S) measured by the charge measurement unit 40 exhibits small amplitudes repeatedly over time. Therefore, the control unit 60 preferably calculates the average value (moving average, etc.) or median value of the amplitude of the measured waveform of the charge state as the value of the charge state.

[0052] Furthermore, by continuously measuring with the charge measurement unit 40 during the feeding step of transporting the substrate S, the control unit 60 can identify the distribution of the charge state of the substrate S along the transport direction. Therefore, by using the measurement results (charge state of the substrate S) from the charge measurement unit 40 in each step of the transport process, the control unit 60 can appropriately identify the static electricity removal results obtained from the static electricity removal status of each processing module 10, 11, 12, the static electricity removal status of the contact member 27 during substrate S transport, and the static electricity removal status of the support pin 39 when the substrate S is supported by the substrate support 36, thereby optimizing the static electricity removal process.

[0053] Alternatively, the load locking unit 30 may have a structure that includes a space for feeding an unprocessed substrate S from the loading module 50 and a space for feeding a processed substrate S from the vacuum transport module 20 (for example, a structure with upper and lower two-layered spaces). In this case, the charge measuring unit 40 can be appropriately provided in the wall surrounding each space.

[0054] Back Figure 1 The control unit 60 of the substrate processing apparatus 1 has a controller body 61 and a user interface 65 connected to the controller body 61. The controller body 61 can be a control computer having one or more processors 62, a memory 63, input / output interfaces (not shown), and electronic circuitry. The processor 62 is a combination of one or more of a CPU, ASIC, FPGA, or a circuit composed of multiple discrete semiconductor devices. The memory 63 includes volatile memory and non-volatile memory (e.g., optical disc, DVD, hard disk, flash memory), storing processing schemes R such as programs for operating the substrate processing apparatus 1 and plasma processing conditions (see also...). Figure 4 ).

[0055] User interface 65 may include a keyboard for users to input commands to manage substrate processing device 1, a display that visualizes the operating status of substrate processing device 1, or a touch panel that has both display and input functions.

[0056] The substrate processing apparatus 1 of this embodiment is basically configured as described above, and its operation (substrate processing method) will be described below.

[0057] The substrate processing apparatus 1, by having a charge measurement unit 40 in the load locking unit 30, can optimize the static electricity removal process of each processing module 10, 11, and 12 based on the measurement results (charge state of the substrate S) of the charge measurement unit 40. Furthermore, the following description focuses on the case where processing is performed by a representative processing module 10 among the processing modules 10, 11, and 12; however, the same process can obviously be implemented using other processing modules 11 and 12 as well.

[0058] Specifically, the control unit 60 optimizes the static electricity removal process by performing the following processes (a) to (d).

[0059] (a) Based on the charged state of the substrate S after it is sent from the processing module 10 to the load locking unit 30, the time for static elimination processing (hereinafter also referred to as the static elimination period) is reset.

[0060] (b) Based on the charged state of the substrate S during the transport process inside the load locking part 30, the deterioration of the contact 27 of the transport device 21 or the support pin 39 of the load locking part 30 is estimated, and the static elimination period is extended if the deterioration is estimated to have occurred.

[0061] (c) Based on the charge state of the substrate S during the transport process inside the load locking part 30, the distribution of the charge state of the substrate S is identified.

[0062] (d) The static elimination period is reset based on the charged state of the unprocessed substrate S sent from the loading module 50 to the load locking unit 30 and the charged state of the processed substrate S sent from the processing module to the load locking unit 30 after processing by the processing module.

[0063] The following description covers the processing steps (a) to (d) of the substrate processing method, divided into first to fourth embodiments. Furthermore, the substrate processing apparatus 1 can be configured to perform any one of the processing steps (a) to (d), or it can be configured to perform multiple or all of the processing steps (a) to (d) in combination.

[0064] [First Implementation]

[0065] (a) The processing involves shortening or extending the static elimination period of the static elimination process performed by the processing module 10, based on the charged state of the substrate S after plasma treatment and static elimination treatment by the processing module 10. For example, the following explanation addresses the case where the charged polarity of the substrate S after processing by the processing module 10 is positive (the surface potential is positive).

[0066] When the substrate S is positively charged, the substrate processing apparatus 1 reduces the surface potential to the negative side through an antistatic treatment. Therefore, if the charged state of the substrate S after the antistatic treatment is smaller than the target charged state, the antistatic period can be considered too long. Consequently, the control unit 60 shortens the antistatic period for the next substrate S process. Conversely, if the charged state of the substrate S after the antistatic treatment is larger than the target charged state, the antistatic period can be considered too short. Therefore, the control unit 60 extends the antistatic period for the next substrate S process. Furthermore, for simplicity, the final charged state of the substrate S on the substrate support 36 is described as assuming no conductivity degradation in the contact 27 and support pin 39; however, as will be explained later, even if degradation occurs in the contact 27 and support pin 39, the same treatment is performed.

[0067] Figure 4 This is a table illustrating part of the static electricity removal process R. For simplicity, processing steps other than static electricity removal have been omitted. Therefore, empty columns are considered irrelevant and do not contain values. Figure 4 As shown, in scheme R, which describes the processing conditions for substrate S, the target surface potential (charged state) and initial static discharge period are described in the static discharge process of processing module 10. When the first substrate S transported from loading module 50 undergoes initial static discharge processing via processing module 10, control unit 60 processes the substrate according to the target charged state and static discharge period conforming to scheme R. Furthermore, the target charged state and initial static discharge period can also be configured to be set by the user via user interface 65.

[0068] Next, as Figure 2 As shown, the control unit 60 transports the substrate S after static electricity removal from the processing module 10 to the load locking unit 30, uses the charge measurement unit 40 of the load locking unit 30 to measure the charge state of the substrate S, and adjusts the static electricity removal period based on the measurement results. In the processing content of (a), the control unit 60 preferably uses the measurement results of the charge measurement unit 40 during the support step of supporting the substrate S by the substrate support unit 36 ​​(see also...). Figure 3 Therefore, the measurement results of the final charged state of the substrate S can be utilized.

[0069] For example, if the target charge state in scheme R is 100V and the static elimination period is 40 seconds, while the charge state (measured result) of the substrate S after static elimination is 80V, then the static elimination period can be considered too long. Therefore, the control unit 60 shortens the static elimination period.

[0070] The shortening of the static discharge period can be achieved by calculating the difference between the measured charge state of the substrate S and the target charge state (charge difference), and setting the shortened period based on the charge difference. For example, the control unit 60 can reset the static discharge period by shortening it by 1 second for every 1V increase in the charge difference. That is, in the example above, based on the charge difference of 20V, the control unit 60 shortens the 40-second static discharge period by 20 seconds. Alternatively, the static discharge period can be shortened by shortening the specified period each time the substrate S is processed.

[0071] Conversely, if the target charge state is 100V and the static elimination period is 20 seconds, but the charge state (measured result) of the substrate S after static elimination is 110V, then the static elimination period can be considered too short. Therefore, the control unit 60 extends the static elimination period. The extension of the static elimination period can also be achieved by calculating the difference between the measured charge state of the substrate S and the target charge state (charge difference), and setting the extension period based on the charge difference. Alternatively, the static elimination period can be extended by extending the specified period each time the substrate S is processed.

[0072] Furthermore, when the charge difference is within a specified range (e.g., several V), the control unit 60 does not need to reset the static discharge period. Therefore, the control unit 60 can suppress changes in the static discharge period during each processing session of the processing module 10, and can avoid variations caused by measurement errors from the charge measurement unit 40.

[0073] Conversely, if the charge polarity of the substrate S after processing by module 10 is negative (surface potential is negative), the substrate processing apparatus 1 lowers the surface potential to the positive side through static elimination. Therefore, if the charge state of the substrate S after static elimination is greater than the target charge state (close to 0), the static elimination period can be considered too long. Consequently, the control unit 60 shortens the static elimination period for the next substrate S processed. Conversely, if the charge state of the substrate S after static elimination is smaller than the target charge state (located on the negative side), the static elimination period can be considered too short. Therefore, the control unit 60 extends the static elimination period for the next substrate S processed.

[0074] Figure 5 This is a flowchart of the substrate processing method in the first embodiment (corresponding to the processing content in (a)). Figure 5 As shown, when the substrate processing apparatus 1 begins processing of the substrate S, the control unit 60 selects the processing module 10 to process the substrate S from the processing modules 10, 11, and 12 (step S1). Then, the control unit 60 sets processing conditions based on scheme R for the plasma processing and static electricity removal processing of the selected processing module 10 (step S2). Thus, the target charged state and the initial static electricity removal period are set as conditions for the static electricity removal processing.

[0075] Next, the control unit 60 feeds the substrate S from the loading module 50 into the load locking unit 30 (step S3), and then controls the conveying device 21 to convey the substrate S from the load locking unit 30 to the selected processing module 10 (step S4). After conveying the substrate S, the control unit 60 performs plasma treatment and static electricity removal treatment on the substrate S (step S5). At this time, the control unit 60 performs static electricity removal treatment according to the set target charging state and static electricity removal period. For example, if static electricity removal treatment is initially performed through the processing module 10, static electricity removal treatment is performed during the static electricity removal period of scheme R.

[0076] After the substrate S is processed, the control unit 60 sends the processed substrate S out of the processing module 10 and transports the substrate S to the load locking unit 30 (step S6). Furthermore, the control unit 60 uses the charge measurement unit 40 of the load locking unit 30 to measure the charge state of the substrate S supported by the substrate support unit 36 ​​(step S7). Thus, the control unit 60 receives the measurement results from the charge measurement unit 40.

[0077] Subsequently, the control unit 60 optimizes the static electricity removal process by analyzing the measurement results of the charge state (step S8). Specifically, in analyzing the measurement results, the control unit 60 compares the charge state of the substrate S after static electricity removal treatment according to the previously set static electricity removal period with the target charge state. Based on the comparison results, if the absolute value of the charge state of the substrate S is greater than the absolute value of the target charge state, the time of the next static electricity removal process is extended; if the absolute value of the charge state of the substrate S is less than the absolute value of the target charge state, the time of the next static electricity removal process is shortened. Furthermore, as described above, when optimizing the static electricity removal process, the control unit 60 can also calculate the charge difference between the charge state of the substrate S after static electricity removal treatment according to the previously set static electricity removal period and the target charge state, and reset the static electricity removal period based on the charge difference.

[0078] After measuring the charge state of the substrate S, the control unit 60 sends the substrate S from the load locking unit 30 to the loading module 50 (step S9). Thus, the substrate processing apparatus 1 can deliver a new, unprocessed substrate S to the previously processed processing module 10. Then, the processing module 10 determines whether to end the processing of the substrate S (step S10). If it continues processing the substrate S (step S10: "No"), it returns to step S3 and repeats the same processing flow.

[0079] As described above, in step S8, the control unit 60 resets the static quenching period for the next substrate S. Therefore, in step S5, the control unit 60 performs static quenching according to the reset static quenching period. As a result, if the static quenching period is too long, it can be reduced to shorten the overall processing time, and particles generated during the static quenching process can be suppressed. Conversely, if the static quenching period is insufficient, it can be extended to reduce the charged state and reduce damage to the devices formed on the substrate S.

[0080] On the other hand, when it is time to end the processing of substrate S (step S10: "Yes"), the control unit 60 proceeds to step S11 to perform the termination process. In this termination process, the control unit 60 preferably stores information on the static eliminator process optimized in step S8. Thus, when restarting the processing of substrate S, the control unit 60 can use the stored static eliminator process information (optimized information) to perform the static eliminator process from the beginning.

[0081] As described above, the substrate processing method of the first embodiment measures the charge state of the substrate S after processing by the processing module 10 in the load locking section 30, thereby optimizing the static electricity removal process. Therefore, the substrate processing method can make the charge state of the substrate S the desired charge state, and can adjust the processing period of the processing module 10 to a suitable length. In addition, the substrate processing apparatus 1 does not need to provide a charge measurement section 40 in each processing module 10, which can reduce manufacturing costs.

[0082] [Second Implementation]

[0083] (b) involves using the change in the charge state of the substrate S during its transport within the load locking section 30 to estimate the degradation of conductive components (contact 27 of the transport device 21, support pin 39 of the substrate support section 36) in contact with the substrate S. Furthermore, the second embodiment describes the case where the charge polarity of the substrate S after processing by the processing module 10 is positive (surface potential is positive), but the case where the charge polarity is negative is also similarly effective in suppressing degradation of conductive components.

[0084] like Figure 3As shown, inside the load locking section 30, the charge state of the substrate S changes when the substrate S is transported. This is because the charge measurement section 40 utilizes electrostatic induction; therefore, if the distance between the object and the sensor changes, the charge induced by the sensor changes, and the measurement result changes. Thus, the change in charge state that occurs as the transport arm 23 descends is superficial. Therefore, by comparing the charge states of the feeding steps with other transport processes, and comparing the charge states of the support steps with each other, it is possible to determine the deterioration (regarding conductivity) of the contact 27 and the deterioration (regarding conductivity) of the support pin 39, respectively.

[0085] Here, during the support step, with the substrate S supported by the conductive support pins 39 of the substrate support portion 36, electrons carried on the substrate S are released to the ground potential via the support pins 39. Thus, the charged state of the substrate S decreases as the support step is performed. If the support pins 39 deteriorate due to prolonged use, the decrease in the charged state of the substrate S during the support step weakens (or ceases to change).

[0086] Therefore, the control unit 60 can calculate the deterioration of the support pin 39 based on the charge state of the substrate S during the support step. For example, the control unit 60 compares the charge state of the substrate S during the previous electrostatic discharge treatment under the same processing conditions (target charge state, electrostatic discharge period, etc.) in the support step (the average value can be taken if there are multiple cases) with the current charge state of the substrate S. Then, if the decrease in the charge state of the substrate S is less than a specified amount, it is determined that the support pin 39 has deteriorated. Alternatively, the control unit 60 can calculate the rate of decrease in the charge state of the substrate S over time during the support step, and if the calculated rate of decrease is less than a rate of decrease threshold (not shown), it is determined that the support pin 39 has deteriorated.

[0087] Next, when the control unit 60 determines that the support pin 39 has deteriorated, it re-sets the static elimination period of each processing module 10, 11, and 12 to a longer duration as an optimization of the static elimination process. For example, the control unit 60 extends the static elimination period by a preset period based on the determination of deterioration of the support pin 39. Alternatively, the control unit 60 may be configured to calculate the degree of deterioration of the support pin 39 and set the static elimination period to be longer as the degree of deterioration increases.

[0088] Furthermore, during the feeding step, with the substrate S supported by the conductive contacts 27 of the conveying device 21 (fork 25), the charge on the substrate S is released to the ground potential via the contacts 27. Thus, the charge state of the substrate S decreases during the feeding step. If the contacts 27 deteriorate due to prolonged use, the decrease in the charge state of the substrate S during the feeding step weakens (or ceases to change). However, the potential detected by the charge measurement unit 40 during the feeding step includes not only the charge state of the substrate S but also the charge carried by the substrate support 36.

[0089] Therefore, the control unit 60 calculates the deterioration of the contact 27 by using both the charged state of the substrate S in the feeding step and the charged state of the substrate S in the support step. For example, the control unit 60 subtracts the charged state of the substrate S in the support step from the charged state of the substrate S in the current feeding step to remove the influence of the charged substrate support 36. Then, the current subtraction result is compared with the subtraction result when performing the same treatment conditions (target charged state, static discharge period, etc.) in the past. If the subtraction result is smaller than a specified amount, it is determined that the contact 27 has deteriorated.

[0090] When the control unit 60 determines that the contact 27 has deteriorated, it, similarly to the support pin 39, resets the static discharge processing time in each processing module 10, 11, and 12 to a longer duration. For example, based on the deterioration determination of the contact 27, the control unit 60 extends the static discharge period by a preset period. The extension amount of the static discharge period when the contact 27 deteriorates and the extension amount of the static discharge period when the support pin 39 deteriorates can be the same or different from each other. Alternatively, the control unit 60 can be configured to calculate the degree of deterioration of the contact 27 and set the static discharge period longer as the degree of deterioration increases.

[0091] Figure 6 This is a flowchart of the substrate processing method in the second embodiment (corresponding to the processing content in (b)). Figure 6 As shown, the control unit 60 performs the same processing steps S1 to S6 as those in the substrate processing method corresponding to (a) described above in steps S21 to S26. Then, during the transport process of transporting the substrate S inside the load locking unit 30, the control unit 60 continuously measures the charge state of the substrate S using the charge measurement unit 40 (step S27). The control unit 60 receives the measurement result of the charge state of the substrate S and stores it in the memory 63.

[0092] Afterwards, the control unit 60 optimizes the static elimination process by analyzing the measurement results of the charged state (step S28). That is, in the analysis of the measurement results, the control unit 60 extracts indicators representing the state of the contact member 27 and indicators representing the deterioration of the support pin 39 based on the charged state of the substrate S in the feeding step and the support step, as described above.

[0093] Furthermore, the control unit 60 determines the deterioration of the contact 27 and the support pin 39 based on the extracted indicators (step S29). If it is determined that the contact 27 or the support pin 39 has not deteriorated (step S29: "No"), the control unit 60 does not perform the static discharge period correction corresponding to the deterioration (step S30). Therefore, the control unit 60 maintains the current static discharge period without resetting the static discharge period based on other determinations.

[0094] On the other hand, if it is determined that the contact 27 or the support pin 39 has deteriorated (step S29: "Yes"), the control unit 60 performs a correction to extend the time of the next static elimination process (step S31).

[0095] Furthermore, after measuring the charge state of the substrate S, the control unit 60 sends the substrate S from the load locking unit 30 to the loading module 50 (step S32). Thus, the substrate processing apparatus 1 can deliver a new, unprocessed substrate S to the processing module 10, which has already processed the substrate. Then, the processing module 10 determines whether to end the processing of the substrate S (step S33). If it continues processing the substrate S (step S33: "No"), it returns to step S23 and repeats the same processing flow.

[0096] If the contact 27 or support pin 39 deteriorates, the control unit 60 resets the static discharge period to be longer. Therefore, in step S25, the control unit 60 performs static discharge processing according to the extended static discharge period. By extending the static discharge period as the contact 27 or support pin 39 deteriorates, the substrate processing apparatus 1 can maintain the charged state of the substrate S at a constant level throughout the entire process, and can process the substrate S with the same quality even without immediate maintenance or component replacement.

[0097] On the other hand, when it is time to end the processing of substrate S (step S33: "Yes"), the control unit 60 proceeds to step S34 to perform the termination process. In this termination process, the control unit 60 preferably stores optimized static eliminator information. Thus, when restarting the processing of substrate S, the control unit 60 can use the optimized information to perform static eliminator processing from the beginning.

[0098] As described above, in the substrate processing method of the second embodiment, the deterioration of the contact 27 and the support pin 39 is calculated. The substrate processing apparatus 1 notifies the user of this deterioration information via the user interface 65, thus reminding the user to perform maintenance on the substrate processing apparatus 1. Furthermore, in the substrate processing method, even if maintenance is not performed immediately, the extended static electricity removal period allows the processing module 10 to reduce the charged state of the substrate S. Therefore, the substrate processing method can postpone the maintenance of the conveying device 21 or the load locking part 30, allowing maintenance or component replacement to be performed together with the next scheduled maintenance, thereby reducing downtime of the apparatus.

[0099] [Third Implementation Method]

[0100] (c) The processing involves identifying the distribution of the charged states of the substrate S, which has undergone plasma treatment and electrostatic removal treatment by the processing module 10, and monitoring the uniformity of the charged states. Furthermore, the third embodiment also describes the case where the charged polarity of the substrate S after processing by the processing module 10 is positive (the surface potential is positive). However, the case where the charged polarity is negative can also be monitored in the same way as the positive case, allowing for the monitoring of the charged state distribution.

[0101] In this case, the control unit 60 uses the charge state of the substrate S measured during the feeding step of the substrate S transport process, and extracts the distribution of the charge state along the extension direction of the substrate S based on the transport speed of the substrate S and the position of the charge measurement unit 40. Furthermore, for example, if the charge state of the substrate S along the surface direction of the substrate S is within a specified allowable error (which can be considered a uniform range), the control unit 60 determines that the quality of the processed substrate S is ensured. Conversely, if the charge state of the substrate S along the surface direction of the substrate S exceeds the specified allowable error, the control unit 60 determines that the charge state of the processed substrate S is non-uniform (quality degraded).

[0102] Additionally, the control unit 60 can perform static electricity removal processing again on substrates S that are determined to have uneven charging states. In this case, the substrate processing device 1 can either transport the substrate S back to the processing module 10 for static electricity removal, or perform static electricity removal by having the substrate S remain in the load locking unit 30 for an extended period to allow charge movement via the support pin 39. Alternatively, the control unit 60 can select substrates S with guaranteed quality and those with degraded quality from the loading module 50.

[0103] [Fourth Implementation Method]

[0104] The processing in (d) involves measuring the charge state of the substrate S fed from the loading module 50 into the load locking unit 30, and using the measurement result (hereinafter also referred to as the unprocessed charge state) to monitor the charge state of the substrate S after processing by the processing module 10. That is, the substrate S supplied to the substrate processing apparatus 1 may already be charged (introduced charge exists). In the case of introduced charge, if the analysis is performed as is and the adjustment during the static elimination period based on the analysis result is applied to the next static elimination process, the static elimination process may not be performed correctly. Therefore, in the substrate processing method of the fourth embodiment, the influence of this introduced charge is eliminated, and the charge state of the substrate S after processing by each processing module 10, 11, and 12 can be accurately captured. Here, it is possible to consider the cases where the introduced charge is positive and becomes positively charged through plasma processing, the introduced charge is positive and becomes negatively charged through plasma processing, the introduced charge is negative and becomes positively charged through plasma processing, and the introduced charge is negative and becomes negatively charged through plasma processing.

[0105] In detail, the control unit 60 calculates the difference between the charged state of the processed substrate S and the unprocessed charged state (hereinafter referred to as the pre-processing difference). The control unit 60 compares this pre-processing difference with a pre-stored threshold. The threshold is set so that the static elimination period can be correctly adjusted for substrate S without the introduction of charge. The pre-processing difference and the threshold are preferably compared in absolute values. Here, a case where the pre-processing difference is less than the threshold means that the static elimination process is too long, including both positively charged and negatively charged states of the substrate S. Therefore, the control unit 60 shortens the static elimination period of the substrate S in the next processing. Conversely, a case where the pre-processing difference is greater than the threshold means that the static elimination process is too short, including both positively charged and negatively charged states of the substrate S. Therefore, the control unit 60 extends the static elimination period of the substrate S in the next processing.

[0106] Figure 7 This is a flowchart of the substrate processing method in the fourth embodiment (corresponding to the processing content in (d)). Figure 7 As shown, the control unit 60 performs the same processing steps S1 to S3 in steps S41 to S43 as in the substrate processing method corresponding to the processing content in (a) described above.

[0107] Then, the control unit 60 uses the charge measurement unit 40 to measure the charge state (unprocessed charge state) of the substrate S sent into the load locking unit 30 (step S44). Next, the control unit 60 receives the measurement result (unprocessed charge state) measured by the charge measurement unit 40 and stores it in the memory 63.

[0108] Subsequently, the control unit 60 controls the conveying device 21 to convey the substrate S of the load locking unit 30 to the selected processing module 10 (step S45). After conveying the substrate S, the control unit 60 performs plasma treatment and static electricity removal treatment on the substrate S (step S46). At this time, the control unit 60 performs static electricity removal treatment according to the set target charging state and static electricity removal period.

[0109] After processing the substrate S, the control unit 60 sends the processed substrate S out of the processing module 10 and transports it to the load locking unit 30 (step S47). Furthermore, the control unit 60 uses the charge measurement unit 40 of the load locking unit 30 to measure the charge state of the transported processed substrate S (step S48). Thus, the control unit 60 receives the measurement results obtained by the charge measurement unit 40 and stores them in the memory 63.

[0110] Next, the control unit 60 analyzes the charged state of the processed substrate S and the unprocessed charged state, and optimizes the static electricity removal process (step S49). In analyzing the measurement results, the control unit 60 subtracts the unprocessed charged state from the charged state of the processed substrate S, calculating the difference before and after processing. If the absolute value of this difference is less than a pre-stored threshold, the control unit 60 shortens the time for the next static electricity removal process during optimization; if the absolute value of the difference is greater than the threshold, the control unit 60 extends the time for the next static electricity removal process during optimization.

[0111] Furthermore, after measuring the charge state of the substrate S, the control unit 60 sends the substrate S from the load locking unit 30 to the loading module 50 (step S50). Thus, the substrate processing apparatus 1 can deliver a new, unprocessed substrate S to the processing module 10, which has already processed the substrate S. To this end, the processing module 10 determines whether to end the processing of the substrate S (step S51). If it continues processing the substrate S (step S51: "No"), it returns to step S43 and repeats the same processing flow thereafter.

[0112] As described above, in step S49, the control unit 60 resets the static quenching period for the next substrate S. Therefore, in step S46, the control unit 60 performs static quenching according to the reset static quenching period. As a result, the overall processing time can be shortened by reducing excessively long static quenching periods, and particles generated during static quenching can be suppressed. In cases where the static quenching period is insufficient, the static quenching period can be extended to reduce the charged state and reduce damage to devices formed on the substrate S.

[0113] On the other hand, when it is time to end the processing of substrate S (step S51: "Yes"), the control unit 60 proceeds to step S52 to perform the termination process. In this termination process, the control unit 60 preferably stores the information of the static quenching process optimized in step S49. Thus, when the processing of substrate S is restarted, the control unit 60 can use the stored static quenching process information (optimized information) to perform the static quenching process from the beginning.

[0114] As described above, the substrate processing method of the fourth embodiment identifies the charge state of the processed substrate S based on the unprocessed charge state, thereby enabling more precise monitoring of the static electricity removal capability of the processing module 10 and allowing for appropriate adjustment of the static electricity removal period. Furthermore, in the substrate processing method, when calculating the deterioration of conductive components (i.e., the processing content in (b)), the unprocessed charge state when the substrate S is fed from the loading module 50 can also be utilized. Moreover, in the substrate processing method, when monitoring the distribution of the charge state of the substrate S (i.e., the processing content in (c)), the unprocessed charge state when the substrate S is fed from the loading module 50 can also be utilized.

[0115] Furthermore, in the substrate processing method, if the unprocessed charged state when the substrate S is sent from the loading module 50 to the load locking unit 30 is already above a certain limit, the transfer of the substrate S to the processing module 10 can be stopped. Alternatively, in the substrate processing method, if the unprocessed charged state is already above a certain limit, static electricity removal processing can be performed immediately after the substrate is transferred to the processing module 10.

[0116] The technical concept and effects of the present invention described in the above embodiments are recorded below.

[0117] The first aspect of the present invention is a substrate processing method of a substrate processing apparatus 1, comprising: a step of sending the substrate S out from processing modules 10, 11, and 12 that perform plasma processing and static electricity removal processing on the substrate S, and conveying the substrate S to a load locking unit 30 that can switch between atmospheric atmosphere and vacuum atmosphere; a step of measuring the charge state of the substrate S in the load locking unit 30; and a step of analyzing the measurement results of the charge state of the substrate S to optimize the static electricity removal processing.

[0118] According to the above scheme, the substrate processing method can stably measure the charge state of the substrate S in the load locking section 30. By using the measurement results, the static electricity removal process of the substrate S can be optimized. For example, by adjusting the static electricity removal process time according to the charge state of the substrate S, the substrate processing method can promote a shorter overall processing time for the substrate S and suppress particle generation. In addition, the optimization of the static electricity removal process is not limited to adjusting the static electricity removal period, but can also adjust the power supplied during the static electricity removal process. For example, when the absolute value of the charge state is large, the power supply can be increased to improve the static electricity removal capability, while when the absolute value of the charge state is small, the power supply can be decreased to reduce the static electricity removal capability.

[0119] Furthermore, in the step of measuring the charge state of the substrate S, the interior of the load locking section 30 is kept in a vacuum atmosphere. Therefore, the substrate processing method can suppress changes in the charge state of the substrate S caused by atmospheric conditions, enabling more accurate measurement of the charge state of the substrate S.

[0120] Furthermore, the load locking unit 30 includes a support unit (buffer unit 37) that supports the delivered substrate S. In the step of measuring the charge state of the substrate S, the surface potential of the substrate S supported by the support unit is measured using the charge measuring unit 40 provided in the load locking unit 30. Thus, the substrate processing method can easily measure the charge state, i.e., the surface potential, of the substrate S.

[0121] Furthermore, the conveying device 21, which conveys the substrate S between the processing modules 10, 11, and 12 and the load locking section 30, includes a contact 27 in the conveying device 21 that contacts the substrate S and a support member (support pin 39) in the support section (buffer section 37) that contacts the substrate S. Both of these components are conductive. In the step of optimizing the static elimination process, the degradation of the conductivity of the contact 27 and the support member is calculated based on measurements of the charged state of the substrate S supported on the support section and the charged state of the substrate S conveyed within the load locking section 30 via the conveying device 21. Therefore, the substrate processing method can reliably calculate the degradation of the conductivity of the contact 27 in the conveying device 21 and the support member in the load locking section 30 (buffer section 37).

[0122] Furthermore, the time for static electricity removal is optimized in cases where the conductivity of the contact 27 or the support (support pin 39) is deteriorated. Therefore, in the substrate processing method, even if the conductivity of the contact 27 or the support deteriorates, the quality of the substrate S can be ensured by extending the static electricity removal time, thus postponing the maintenance of the substrate processing apparatus 1.

[0123] Furthermore, in the step of optimizing the static quenching process, the charged state of the substrate S after static quenching for a previously set time is compared with the target charged state, and the time of the next static quenching process is adjusted based on this comparison (result). Thus, the substrate processing method can appropriately adjust the static quenching time.

[0124] Furthermore, in the step of optimizing the static quenching process, the charge difference between the charged state of the substrate S after static quenching according to the previously set static quenching period and the target charged state is calculated, and the static quenching time is reset based on the charge difference. Therefore, the substrate processing method can more smoothly adjust the static quenching time.

[0125] Furthermore, in the step of measuring the charge state of the substrate S, the charge state of the substrate S transported inside the load locking section 30 is continuously measured, and in the step of optimizing the static electricity removal process, the distribution of the charge state of the substrate is extracted. Therefore, the substrate processing method can identify the distribution of the charge state of the entire substrate S and can suppress non-uniformity of the charge state.

[0126] Additionally, the method includes: a step of conveying the substrate S before processing by the processing modules 10, 11, and 12 to the load locking unit 30; and a step of measuring the charge state of the substrate S before processing in the load locking unit 30. In the step of optimizing the static electricity removal process, the static electricity removal process is optimized based on the charge state of the substrate S after processing by the processing modules 10, 11, and 12 and the charge state of the substrate S before processing. Therefore, the substrate processing method can optimize the static electricity removal process with higher precision.

[0127] Furthermore, in the step of optimizing the static elimination process, the difference between the charged state of the processed substrate S before being transported to the load locking unit 30 and the charged state before being transported to the load locking unit is calculated. The difference is compared with a preset threshold, and if the difference is above the threshold, the static elimination process time is extended. Thus, by extending the static elimination process time based on the case of a large difference, the substrate processing method can suppress insufficient static elimination of the substrate S.

[0128] Furthermore, the static electricity removal process time can be shortened when the difference is less than a threshold. Therefore, by shortening the static electricity removal process time based on the small difference, the substrate processing method can further improve the efficiency of substrate processing.

[0129] Furthermore, a second aspect of the present invention is a substrate processing apparatus 1, comprising: processing modules 10, 11, and 12 for performing plasma processing and static electricity removal processing on a substrate S; a load locking unit 30 capable of switching between atmospheric and vacuum atmospheres; a vacuum transport module 20 for transporting the substrate S processed by the processing modules 10, 11, and 12 from the processing modules 10, 11, and 12 to the load locking unit 30; a charge measurement unit 40 disposed in the load locking unit 30 for measuring the charge state of the substrate S; and a control unit 60 for processing the measurement results of the charge measurement unit 40, wherein the control unit 60 analyzes the measurement results of the charge state of the substrate S to optimize the static electricity removal processing. Thus, the substrate processing apparatus 1 enables optimization of the static electricity removal processing in the processing of the substrate S.

[0130] The substrate processing method and substrate processing apparatus 1 of the embodiments of the present invention are merely illustrative and not limiting in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the present invention. The contents described in the above embodiments can be used in other structures or combined with each other without contradiction. For example, the type of substrate S processed by the substrate processing method and substrate processing apparatus 1 is not limited to FPD substrates, and can be various components such as disk-shaped wafers.

[0131] The substrate processing apparatus 1 of the present invention can be applied to any type of apparatus among Atomic Layer Deposition (ALD), Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

Claims

1. A substrate processing method for a substrate processing apparatus, characterized in that, include: The step of sending the substrate out from the processing module that performs plasma treatment and static electricity removal on the substrate, and conveying the substrate to the load locking part that can switch between atmospheric atmosphere and vacuum atmosphere; The step of measuring the charge state of the substrate at the load locking section; and The step of optimizing the static electricity removal process involves analyzing the measurement results of the charged state of the substrate. The load locking part has a support part that supports the delivered substrate. Includes a transport device for transporting the substrate between the processing module and the load locking unit. The contact element in the conveying device that contacts the substrate and the support element in the support portion that contacts the substrate are both electrically conductive. In the step of measuring the charged state of the substrate, the surface potential of the substrate supported by the support portion is measured using a charge measuring unit provided in the load locking portion. In the step of optimizing the static elimination process, the degradation of the conductivity of the contact and the support is estimated based on the measurement results of the charge state of the substrate supported by the support portion and the charge state of the substrate being transported by the transport device inside the load locking portion.

2. The substrate processing method as described in claim 1, characterized in that: In the step of measuring the charged state of the substrate, the interior of the load locking part is made into a vacuum atmosphere.

3. The substrate processing method as described in claim 1, characterized in that: When it is deduced that the conductivity of the contact or the support has deteriorated, the time for the static elimination process is optimized.

4. A substrate processing method of a substrate processing apparatus, characterized in that, include: The step of sending the substrate out from the processing module that performs plasma treatment and static electricity removal on the substrate, and conveying the substrate to the load locking part that can switch between atmospheric atmosphere and vacuum atmosphere; The step of measuring the charge state of the substrate at the load locking section; and The step of optimizing the static electricity removal process involves analyzing the measurement results of the charged state of the substrate. In the step of optimizing the static elimination process, the charged state of the substrate after static elimination treatment for a previously set time is compared with the target charged state, and the time of the next static elimination process is adjusted based on the comparison.

5. The substrate processing method as described in claim 4, characterized in that: In the step of optimizing the static elimination process, the charge difference between the charge state of the substrate after static elimination treatment for the previously set static elimination treatment time and the target charge state is calculated, and the static elimination treatment time is reset based on the charge difference.

6. A substrate processing method of a substrate processing apparatus, characterized in that, include: The step of sending the substrate out from the processing module that performs plasma treatment and static electricity removal on the substrate, and conveying the substrate to the load locking part that can switch between atmospheric atmosphere and vacuum atmosphere; The step of measuring the charge state of the substrate at the load locking section; and The step of optimizing the static electricity removal process involves analyzing the measurement results of the charged state of the substrate. In the step of measuring the electrical state of the substrate, the electrical state of the substrate during transport inside the load locking section is continuously measured. In the step of optimizing the static electricity removal process, the distribution of the charged states of the substrate is extracted.

7. A substrate processing method of a substrate processing apparatus, characterized in that, include: The step of sending the substrate out from the processing module that performs plasma treatment and static electricity removal on the substrate, and conveying the substrate to the load locking part that can switch between atmospheric atmosphere and vacuum atmosphere; The step of measuring the charge state of the substrate at the load locking section; The step of optimizing the static electricity removal process involves analyzing the measurement results of the charged state of the substrate. The step of conveying the substrate to the load locking part before it is processed by the processing module; and The step of measuring the charged state of the substrate before the processing at the load locking section. In the step of optimizing the static electricity removal process, the static electricity removal process is optimized based on the charged state of the substrate after being processed by the processing module and the charged state of the substrate before processing.

8. The substrate processing method as described in claim 7, characterized in that: In the step of optimizing the static electricity removal process, the difference between the charged state of the substrate after processing and the charged state of the substrate before processing, which is then transported to the load locking unit, is calculated, and this difference is compared with a preset threshold. If the difference is above the threshold, the time for the static elimination treatment is extended.

9. The substrate processing method as described in claim 8, characterized in that: If the difference is less than the threshold, shorten the time of the static elimination process.

10. A substrate processing apparatus, characterized in that, include: A processing module that performs plasma treatment and static electricity removal on the substrate; A load locking unit capable of switching between atmospheric and vacuum atmospheres; The substrate processed by the processing module is transported from the processing module to the vacuum transport module of the load locking part; A charge measurement unit disposed in the load locking part for measuring the charge state of the substrate; and The control unit processes the measurement results from the charged measurement unit. The control unit analyzes the measurement results of the charged state of the substrate to optimize the static electricity removal process. The load locking part has a support part that supports the delivered substrate. Includes a transport device for transporting the substrate between the processing module and the load locking unit. The contact element in the conveying device that contacts the substrate and the support element in the support portion that contacts the substrate are both electrically conductive. The charge measurement unit measures the surface potential of the substrate supported by the support portion as the charge state of the substrate. The control unit calculates the degradation of the conductivity of the contact and the support based on measurements of the electrical state of the substrate supported by the support and the electrical state of the substrate being transported by the conveying device inside the load locking part.

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