Substrate holder, bonding system and bonding method

Abstract

The present invention provides a substrate holder, a bonding system, and a bonding method for stably bonding a semiconductor chip onto a monolithic substrate. The bonding system (90) includes: a bonding device (80) for bonding a semiconductor chip (45) to a monolithic substrate (41); and a substrate holder (10) for holding the monolithic substrate (41). The bonding device (80) includes: a platform (31) for adsorbing and fixing the substrate holder (10) on a mounting surface (13a). The substrate holder (10) includes: a plate-shaped base (11) for mounting the monolithic substrate (41) on its upper surface (11a) and adsorbing and fixing its lower surface (11b) on the mounting surface (31a); and a positioning member (21) disposed on the base (11) for defining the position of the monolithic substrate (41).

Description

Technical Field

[0001] The present invention relates to a substrate holder for holding a single substrate, a bonding system including the substrate holder and a bonding device, and a bonding method in the bonding system. Background Technology

[0002] Regarding the bonding of semiconductor chips, in most cases, semiconductor chips are sequentially bonded over each bonding region of a multi-beveled substrate, which has multiple bonding regions for bonding semiconductor chips. However, in cases where the substrate cannot be diced after bonding, or in cases where the structure is complex and the yield is poor, such as with multilayer printed circuit boards, the following method can be used: cut single substrates from the multi-beveled substrate, arrange them on a tray, transport them to the platform of the bonding apparatus, attach each single substrate to a protrusion provided on the platform, and sequentially bond semiconductor chips thereon (see, for example, Patent Document 1).

[0003] On the other hand, in recent years, the following method of gold solder fusion bonding has been used: forming gold bumps on multiple electrodes of an electronic component, providing a thin solder film on the surface of multiple copper electrodes of a substrate, and simultaneously thermally fusion bonding the gold of the multiple gold bumps with the solder on the surface of the multiple copper electrodes (see, for example, Patent Document 2).

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2000-21932

[0007] Patent Document 2: Japanese Patent Application Publication No. 2011-254032 Summary of the Invention

[0008] The problem that the invention aims to solve

[0009] Furthermore, when using the gold solder fusion bonding method described in Patent Document 2 for bonding a semiconductor chip to a substrate, it is necessary to simultaneously apply heat and pressure load to both the semiconductor chip and the substrate. However, in the bonding device described in Patent Document 1, the protrusion of the platform is smaller than the size of the monolithic substrate to avoid interference with the tray, and the monolithic substrate is supported with its peripheral portion extending outward from the protrusion. In this case, as shown in Figure 9 of Patent Document 1, there is no problem when the size of the semiconductor chip is smaller than the size of the protrusion. However, in recent years, there has been a growing demand for bonding semiconductor chips that are approximately the same size as the monolithic substrate to the monolithic substrate.

[0010] At this time, in the bonding device described in Patent Document 1, the peripheral monolithic substrate is not supported by the protrusion, so sometimes it is not possible to apply sufficient heat and pressing load to the peripheral semiconductor chip and the monolithic substrate, and the semiconductor chip cannot be stably bonded to the monolithic substrate.

[0011] Therefore, the object of the present invention is to stably bond a semiconductor chip onto a monolithic substrate.

[0012] Technical means to solve the problem

[0013] The substrate holder of the present invention has a single substrate for holding semiconductor chips for bonding, and includes: a plate-shaped base on which the single substrate is placed on an upper surface and on which the lower surface is adsorbed and fixed to the platform of the bonding device; and a positioning member disposed on the base to define the position of the single substrate placed on the upper surface of the base.

[0014] Thus, the entire surface of the monolithic substrate is held by the upper surface of the base, allowing semiconductor chips of approximately the same size as the monolithic substrate to be stably bonded to it.

[0015] In the substrate holder of the present invention, the base may also have a through hole extending along the thickness direction in the area where a single substrate is placed. When the through hole is adsorbed and fixed on the mounting surface of the platform of the bonding device on the lower surface, it communicates with the adsorption hole provided on the platform of the bonding device.

[0016] Therefore, a single substrate can be adsorbed and fixed on the upper surface of the base, which is attached to the platform.

[0017] In the substrate holder of the present invention, the base may also place multiple single substrates on the upper surface, and each region where each single substrate is placed is provided with multiple through holes extending along the thickness direction. When each through hole is adsorbed and fixed on the mounting surface of the platform of the bonding device on the lower surface, it communicates with at least one adsorption hole provided on the platform of the bonding device.

[0018] Therefore, multiple single substrates can be simultaneously adsorbed and fixed on the upper surface of the base and the mounting surface of the platform.

[0019] In the substrate holder of the present invention, the base may also have a groove on its lower surface that allows multiple through holes to connect.

[0020] Therefore, by using an adsorption hole on the platform to make multiple through holes a vacuum, multiple individual substrates can be simultaneously adsorbed and fixed on the upper surface of the base.

[0021] In the substrate holder of the present invention, the base may also have an upper surface flatness value and a lower surface flatness value that are below a reference flatness value, and a thickness deviation that is below a reference deviation.

[0022] Therefore, when the base is adsorbed and fixed on the platform's mounting surface, the flatness value of the upper surface is the same as the mounting flatness value of the platform's mounting surface, and the single substrate can be held on the base with the same levelness as when the single substrate is directly adsorbed and fixed on the platform's mounting surface.

[0023] In the substrate holder of the present invention, the positioning member may also be a plate-shaped member having at least one opening for embedding a single substrate, and overlapped on the base in such a way that the opening constitutes a recess that defines the placement position of the single substrate.

[0024] By designing the positioning member and the base as separate components that overlap on the base, it is no longer necessary to machine the base with recesses that specify the position of a single substrate. This simplifies the machining of the base and reduces its flatness.

[0025] In the substrate holder of the present invention, the base may also be a ceramic component with a ground upper and lower surface, and the positioning component may be made of metal.

[0026] This reduces the flatness values ​​of the upper and lower surfaces of the base and also reduces thickness deviation. Furthermore, by using inexpensive metal for the positioning components, which have no limit on flatness, processing becomes easier, thus reducing costs.

[0027] The bonding system of the present invention includes: a bonding device for bonding a semiconductor chip to a monolithic substrate; and a substrate holder for holding the monolithic substrate, wherein the bonding device includes: a platform for adsorbing and fixing the substrate holder on a mounting surface, the substrate holder including: a plate-shaped base on which the monolithic substrate is mounted on an upper surface and whose lower surface is adsorbed and fixed to the mounting surface of the platform; and a positioning member disposed on the base for defining the position of the monolithic substrate mounted on the upper surface of the base.

[0028] In this way, the entire surface of the monolithic substrate is held by the upper surface of the base, so that semiconductor chips of approximately the same size as the monolithic substrate can be stably bonded to the monolithic substrate.

[0029] In the bonding system of the present invention, the platform may also include an adsorption hole. The base has a through hole extending along the thickness direction in the area where the monolithic substrate is placed. When the through hole is adsorbed and fixed on the placement surface on the lower surface, it communicates with the adsorption hole provided on the platform to adsorb and fix the monolithic substrate on the upper surface of the base.

[0030] In this way, a single substrate can be adsorbed and fixed on the upper surface of the base, which is attached to the platform, so that a semiconductor chip of approximately the same size as the single substrate can be stably bonded to the single substrate.

[0031] In the bonding system of the present invention, the substrate holder may also hold multiple single substrates on its upper surface. The positioning members respectively define the positions of the multiple single substrates placed on the upper surface of the base. The platform includes at least one adsorption hole. The base is provided with through holes in each area where multiple single substrates are placed, which are through holes in the thickness direction. When each through hole is adsorbed and fixed on the placement surface on the lower surface, it communicates with at least one adsorption hole, thereby adsorbing and fixing each single substrate to the upper surface of the base.

[0032] Therefore, multiple single substrates can be simultaneously adsorbed and fixed on the upper surface of the base and the mounting surface of the platform, enabling efficient bonding.

[0033] In the joining system of the present invention, the base may also have a groove on its lower surface that allows multiple through holes to connect.

[0034] Therefore, by using an adsorption hole on the platform to make multiple through holes a vacuum, multiple individual substrates can be simultaneously adsorbed and fixed on the upper surface of the base.

[0035] In the joining system of the present invention, the base may also have an upper surface flatness value and a lower surface flatness value that are below the reference flatness value, and a thickness deviation that is below the reference deviation.

[0036] Therefore, the single substrate can be held on the base with the same level of horizontality as when the single substrate is directly adsorbed and fixed on the mounting surface of the platform, and a stable bonding can be performed.

[0037] In the bonding system of the present invention, the positioning member may also be a plate-shaped member having at least one opening for embedding a monolithic substrate, which overlaps on the base in such a way that the opening forms a recess that defines the placement position of the monolithic substrate.

[0038] In the joining system of the present invention, the base may also be a ceramic component with a ground upper and lower surface, and the positioning component may be made of metal.

[0039] The bonding method of the present invention bonds a semiconductor chip to a monolithic substrate and includes: a preparation step, preparing a substrate holder and a bonding device, wherein the substrate holder includes a base on which a plurality of monolithic substrates are placed on an upper surface, and positioning members disposed on the base and defining the positions of the plurality of monolithic substrates placed on the upper surface of the base, and through holes extending along the thickness direction are respectively provided in each region where the plurality of monolithic substrates are placed; the bonding device includes a platform having at least one adsorption hole, and a semiconductor chip is pressed onto the monolithic substrate and bonded; a placement step, placing a plurality of monolithic substrates on the placement surface of the substrate holder, such that each through hole communicates with at least one adsorption hole, and placing the substrate holder on the placement surface of the platform; an adsorption and fixing step, setting at least one adsorption hole of the bonding device to a vacuum, adsorbing and fixing the substrate holder to the placement surface of the platform, and adsorbing and fixing each monolithic substrate to the upper surface of the base; and a bonding step, sequentially bonding the semiconductor chip onto the plurality of monolithic substrates.

[0040] Therefore, semiconductor chips that are approximately the same size as the monolithic substrate can be stably bonded to the monolithic substrate.

[0041] In the bonding method of the present invention, the bonding apparatus may also include: a stage for placing multiple monolithic substrates on the placement surface of a substrate holder.

[0042] The mounting process can be carried out by placing multiple single substrates on the mounting surface of the substrate holder using a mounting stage, then transferring the substrate holder containing the multiple single substrates to a platform, and placing the transferred substrate holder on the mounting surface of the platform.

[0043] By using a substrate holder to transport single substrates, bonding can be performed in a simple way.

[0044] The effects of the invention

[0045] This invention can stably bond semiconductor chips onto a monolithic substrate. Attached Figure Description

[0046] Figure 1 This is a perspective view illustrating the joining system of the embodiment.

[0047] Figure 2 To indicate Figure 1 A perspective view of the substrate holder of the bonding system shown.

[0048] Figure 3 for Figure 2 The diagram shows the cutaway surface of the substrate holder.

[0049] Figure 4 This is an elevation view showing the state of a monolithic substrate held in the recess of a substrate holder by bonding a semiconductor chip to it using the bonding system of the embodiment.

[0050] Figure 5 To indicate the use Figure 1 The graph shows the temperature change of the monolithic substrate over time when the bonding system bonds the semiconductor chip to the monolithic substrate.

[0051] Figure 6 A detailed view of another substrate holder.

[0052] Explanation of symbols

[0053] 10, 100: Substrate holder

[0054] 11, 111: Base

[0055] 11a, 111a: Upper surface

[0056] 11b, 111b: Lower surface

[0057] 12, 112: Through holes

[0058] 13: concave part

[0059] 14: Kong

[0060] 21, 121: Positioning components

[0061] 22, 122: Opening

[0062] 23, 124: Sales

[0063] 31: Platform

[0064] 31a: Placement surface

[0065] 32: First adsorption pore

[0066] 33: Second adsorption pore

[0067] 34: Common adsorption pores

[0068] 35: Connector

[0069] 36: Joining tools

[0070] 41: Monolithic substrate

[0071] 42: Electrode

[0072] 43: Solder layer

[0073] 44: Bottom filler

[0074] 45: Semiconductor Chips

[0075] 46: gold bumps

[0076] 50: Platform

[0077] 80: Connecting device

[0078] 90: Joining system

[0079] 115: Groove Detailed Implementation

[0080] The following refers to the appendix. Figure 1 The assembly system 90 of the embodiment will be described in detail. Figure 1 As shown, the bonding system 90 includes: a bonding device 80 for bonding a semiconductor chip 45 to a monolithic substrate 41; and a substrate holder 10 for holding the monolithic substrate 41. Furthermore, in the following description, the horizontal direction is assumed to be the XY direction and the vertical direction to be the Z direction.

[0081] The bonding device 80 includes: a platform 31 and a substrate holder 10 for adsorption and fixation. The upper surface of the platform 31 is a flat mounting surface 31a, and a plurality of first adsorption holes 32 and a plurality of second adsorption holes 33 are provided on the mounting surface 31a. The first adsorption holes 32 and the second adsorption holes 33 are connected to a vacuum device (not shown) to adsorb and fix the substrate holder 10 onto the mounting surface 31a by vacuum.

[0082] like Figure 2 , Figure 3 As shown, the substrate holder 10 includes a base 11 and a positioning member 21. The base 11 is a plate-shaped ceramic member with its upper surface 11a and lower surface 11b ground. Furthermore, Figure 2 This indicates that the substrate holding device 10 is set on the mounting stage 50, which is located near the bonding device 80.

[0083] The positioning member 21 is a metal plate-shaped member having at least one opening 22 for embedding into the monolithic substrate 41. For example... Figure 3 As shown, the positioning member 21 has a pin 23 extending towards the base 11 at its end. The pin 23 is inserted into the hole 14 in the base 11, thereby aligning with the upper surface 11a of the base 11. If the positioning member 21 aligns with the upper surface 11a of the base 11, then as shown... Figure 2 As shown, the opening 22 forms a recess 13 that defines the placement position of the monolithic substrate 41. The recess 13 divides the area where the monolithic substrate 41 is placed. Furthermore, the size of the hole 14 in the base 11 is larger than the pin 23 of the positioning member 21, so as to absorb the difference in thermal expansion between the base 11 and the positioning member 21.

[0084] In the region of the recess 13 of the base 11, a through hole 12 is provided, which penetrates the base 11 along the thickness direction. The through hole 12 is as follows... Figure 4 As shown, when the substrate holder 10 is placed on the mounting surface 31a of the platform 31, it communicates with the second adsorption hole 33 provided on the mounting surface 31a.

[0085] The flatness values ​​of the upper surface 11a and the lower surface 11b of the base 11 are both below the reference flatness value, and the thickness deviation of the base 11 is below the reference deviation. Here, the flatness value refers to the distance between two parallel planes when they are clamped together by a geometrically parallel plane of a predetermined length, at which the distance between the two planes is minimized. It is expressed in units of the distance between the two planes (μm) / a predetermined distance (mm). The reference flatness value can be freely set, for example, between 1 (μm) / 100 (mm) and 10 (μm) / 100 (mm). Furthermore, the thickness deviation refers to the degree of thickness variation within a predetermined range, for example, between 1 (μm) / 100 (mm) and 10 (μm) / 100 (mm).

[0086] By specifying the flatness value of the upper surface 11a and the flatness value of the lower surface 11b of the base 11, as well as the thickness deviation, the flatness value of the upper surface 11a is equal to the flatness value of the mounting surface 31a of the platform 31 when the substrate holder 10 is adsorbed and fixed to the mounting surface 31a of the platform 31. Therefore, the single substrate 41 can be held on the base 11 with the same level of flatness as when the single substrate 41 is directly adsorbed and fixed to the mounting surface 31a of the platform 31.

[0087] The method for bonding a semiconductor chip 45, which is approximately the same size as the monolithic substrate 41, to the monolithic substrate 41 using a bonding system 90 configured as described above will be described. First, a bonding apparatus 80 and a substrate holder 10 are prepared (preparation step).

[0088] Firstly, as Figure 2 As shown, the substrate holder 10 is set on the stage 50. Then, using a collet (not shown), a single substrate 41 is gradually placed into the recess 13 of the substrate holder 10. On the electrodes 42 disposed on the upper surface of each single substrate 41, as shown... Figure 4 A solder layer 43 is formed as shown.

[0089] After the monolithic substrate 41 is placed in all the recesses 13, a bottom filler 44 is applied to the upper surface of the monolithic substrate 41, such as... Figure 4 As shown, the substrate holder 10 is placed on the placement surface 31a of the platform 31 of the bonding device 80. At this time, the lower surface 11b of the base 11 of the substrate holder 10 covers the first adsorption hole 32 provided on the placement surface 31a, and the through hole 12 of the base 11 communicates with the second adsorption hole 33 provided on the placement surface 31a (placement process).

[0090] Subsequently, if the first adsorption hole 32 and the second adsorption hole 33 are set to a vacuum by the vacuum device (not shown) of the bonding device 80, the lower surface 11b of the base 11 is adsorbed and held on the mounting surface 31a. In addition, if the second adsorption hole 33 becomes a vacuum, the through hole 12 of the base 11 that communicates with the second adsorption hole 33 also becomes a vacuum. Thus, for the monolithic substrate 41 placed in the recess 13 of the base 11, the entire surface is adsorbed and held on the upper surface 11a of the base 11 in the region of the recess 13 (adsorption fixing process).

[0091] The coupling device 80 heats the platform 31 using a heater built into the platform 31, such as... Figure 5 As shown, the temperature of the monolithic substrate 41 is raised to the bonding start temperature T1. Here, Figure 5 The solid line a represents the temperature change of the monolithic substrate 41 when the base 11 is made of ceramic with low thermal conductivity. Figure 5 The dashed line b represents the temperature change of the monolithic substrate 41 when the base 11 is made of ceramic with a thermal conductivity higher than that of the solid line a. Regarding... Figure 5 The solid line a and the dashed line b will be explained below.

[0092] On the other hand, the bonding device 80 holds the semiconductor chip 45 by adsorbing the tip of the bonding tool 36 mounted on the top of the bonding head 35, and moves it directly above the monolithic substrate 41. Gold bumps 46 are formed on the electrodes of the semiconductor chip 45. The bonding head 35 has a built-in heater for heating the semiconductor chip 45.

[0093] After the temperature of the monolithic substrate 41 rises to the bonding start temperature T1, the bonding device 80 uses a heater built into the bonding head 35 to raise the temperature of the semiconductor chip 45 and lowers the bonding head 35, pressing the gold bumps 46 of the semiconductor chip 45 onto the solder layer 43 on the electrode 42 of the monolithic substrate 41. Then, as... Figure 5 As shown, the bonding device 80 raises the temperature of the semiconductor chip 45 and the monolithic substrate 41 to a bonding temperature T2 above the melting temperature of the solder, simultaneously thermally melting and bonding the gold of the gold bump 46 with the solder layer 43, performing gold solder fusion bonding. In addition, molten underfill 44 is filled between the upper surface of the monolithic substrate 41 and the lower surface of the semiconductor chip 45.

[0094] Then, the bonding device 80 introduces air into the cooling channel built into the bonding head 35, thereby lowering the temperature of the semiconductor chip 45 and the monolithic substrate 41 and solidifying the molten metal. At this time, the underfill 44 between the upper surface of the monolithic substrate 41 and the lower surface of the semiconductor chip 45 solidifies. Thus, the bonding process is completed.

[0095] As explained above, in the bonding system 90 of the embodiment, the entire surface of the monolithic substrate 41 is held by the upper surface 11a of the region of the recess 13 of the base 11, and is adsorbed and fixed to the upper surface 11a through the through hole 12. Therefore, even if the size of the semiconductor chip 45 is approximately the same as the size of the monolithic substrate 41, sufficient heat and pressing load can be applied to the monolithic substrate 41 and the semiconductor chip 45, and the semiconductor chip 45 can be stably bonded to the monolithic substrate 41.

[0096] Furthermore, the deviations in the upper flatness value of the upper surface 11a, the lower flatness value of the lower surface 11b, and the thickness of the base 11 are specified. Therefore, the single substrate 41 can be held on the base 11 with the same level of horizontality as when the single substrate 41 is directly adsorbed and fixed on the mounting surface 31a of the platform 31. As a result, multiple gold bumps 46 of the semiconductor chip 45 can be pressed evenly on multiple solder layers 43, and good gold solder fusion bonding can be achieved. Especially when the thickness of the solder layer 43 is as thin as about 10 μm, good gold solder fusion bonding can also be achieved.

[0097] In addition, the substrate holder 10 is configured such that a metal positioning member 21 is superimposed on the base 11, which is a plate-shaped ceramic component with a ground upper surface 11a and a lower surface 11b. Therefore, the deviation of the flatness value and thickness of the base 11 can be reduced. Furthermore, by making the positioning member 21, which has no limitation on the flatness value, into an inexpensive metal, the processing becomes easier and the cost can be reduced.

[0098] Subsequently, on Figure 5 The solid line a and the dashed line b are used for illustration. Among ceramic materials, there are those with low thermal conductivity and those with higher thermal conductivity. As explained above, Figure 5 The solid line a represents the temperature change of the monolithic substrate 41 when the base 11 is made of ceramic with low thermal conductivity. Figure 5 The dashed line b represents the temperature change of the monolithic substrate 41 when the base 11 is made of ceramic with a higher thermal conductivity than the solid line a.

[0099] like Figure 5 As shown by solid line a, in the case of ceramic materials with low thermal conductivity, even when the monolithic substrate 41 is heated by the heater of platform 31, the heat transfer from platform 31 to the monolithic substrate 41 is slow, and it takes time for the temperature of the monolithic substrate 41 to reach the bonding start temperature T1. However, when the semiconductor chip 45 is heated by the heater built into the bonding head 35, the heat from the semiconductor chip 45 enters the monolithic substrate 41 and does not dissipate from the monolithic substrate 41 to platform 31, thus shortening the temperature rise time from the bonding start temperature T1 to the bonding temperature T2.

[0100] Conversely, if the base 11 is made of a ceramic with a higher thermal conductivity than described above, the heat transfer from the platform 31 to the monolithic substrate 41 is faster, as shown by the dashed line b, and the time to reach the bonding start temperature T1 is shorter compared to the case of solid line a. On the other hand, of the heat flowing into the monolithic substrate 41 from the semiconductor chip 45, more heat dissipates from the base 11 to the platform 31, so the time for the temperature to rise from the bonding start temperature T1 to the bonding temperature T2 is slower than the case shown by solid line a.

[0101] Therefore, by preparing a substrate holder 10 with thermal conductivity of a variety of appropriately selected ceramic materials constituting the base 11, bonding that conforms to the characteristics of the monolithic substrate 41 or semiconductor chip 45 can be performed simply by replacing the substrate holder 10.

[0102] Subsequently, on the one hand, referring to Figure 6 One aspect describes the structure of a substrate holder 100 according to another embodiment. The substrate holder 100 includes a base 111 and a positioning member 121. The positioning member 121 is a metal plate-shaped member with multiple openings 122 for embedding a single substrate 41, and overlaps the base 111. At both ends of the positioning member 121, there are downwardly protruding pins 124. The pins 124 engage with the outer surface of the base 11, defining the position of the positioning member 121 relative to the base 111.

[0103] In multiple regions of the base 111 where the monolithic substrate 41 is placed, through holes 112 are provided that penetrate the upper surface 111a and the lower surface 111b. On the lower surface 111b, a groove 115 is provided that connects the multiple through holes 112 laterally.

[0104] like Figure 6 As shown, if the substrate holder 100 is placed on the platform 31 with the groove 115 of the substrate holder 100 covering the common adsorption hole 34 provided on the mounting surface 31a of the platform 31, and the common adsorption hole 34 is set to a vacuum, then each through hole 112 becomes a vacuum, and a single substrate 41 can be adsorbed and fixed on the upper surface 111a of the base 111, while the base 111 is adsorbed and held on the mounting surface 31a of the platform 31.

[0105] With the aforementioned structure, even when the number of common adsorption holes 34 on the mounting surface 31a of the platform 31 is small, or as... Figure 4 Even if the through hole 12 of the base 11 and the second adsorption hole 33 are not aligned as shown, the base 111 and the single substrate 41 can still be simultaneously adsorbed and fixed. Here, at least one common adsorption hole 34 is required on the mounting surface 31a of the platform 31; there can be one or more.

Claims

1. A substrate holder that holds a single substrate for joining semiconductor chips, the substrate holder characterized by comprising: a base of a plate shape that places the single substrate on an upper surface and that is adsorptively fixed to a placement surface of a stage of a joining apparatus on a lower surface; and a positioning member that is provided on the base and that defines a position of the single substrate placed on the upper surface of the base, wherein the upper surface of the base is a flat surface, the positioning member is a plate-shaped member that is formed with at least one opening for embedding the single substrate and that is coincided with the upper surface of the base in a manner that the opening constitutes a recess that defines a placement position of the single substrate, the base is provided with a through-hole that penetrates in a thickness direction in a region where the single substrate is placed, the through-hole is communicated with an adsorption hole provided in the stage of the joining apparatus when the lower surface is adsorptively fixed to the placement surface of the stage of the joining apparatus, and wherein an entire surface of the single substrate is held by the upper surface of the region of the recess of the base and is adsorptively fixed to the upper surface through the through-hole.

2. A substrate holder that holds a single substrate for joining semiconductor chips, the substrate holder characterized by comprising: a base of a plate shape that places the single substrate on an upper surface and that is adsorptively fixed to a placement surface of a stage of a joining apparatus on a lower surface; and a positioning member that is provided on the base and that defines a position of the single substrate placed on the upper surface of the base, wherein the upper surface of the base is a flat surface, the positioning member is a plate-shaped member that is formed with at least one opening for embedding the single substrate and that is coincided with the upper surface of the base in a manner that the opening constitutes a recess that defines a placement position of the single substrate, the base is provided with a plurality of through-holes that penetrate in a thickness direction in respective regions where a plurality of the single substrates are placed on the upper surface, each of the through-holes is communicated with at least one adsorption hole provided in the stage of the joining apparatus when the lower surface is adsorptively fixed to the placement surface of the stage of the joining apparatus, and wherein an entire surface of each of the single substrates is held by the upper surface of the region of the recess of the base and is adsorptively fixed to the upper surface through the respective through-holes.

3. The substrate holder according to claim 2, wherein the base is provided with a groove that communicates the plurality of through-holes on the lower surface.

4. The substrate holder according to claim 1 or 2, wherein, for the base, an upper flatness value of the upper surface and a lower flatness value of the lower surface are below a reference flatness value, and a deviation in thickness is below a reference deviation.

5. The substrate holder according to claim 1 or 2, wherein the base is a ceramic member whose upper surface and lower surface are polished, and the positioning member is made of metal.

6. A joining system that includes: a joining apparatus that joins semiconductor chips to a single substrate; and a substrate holder that holds the single substrate, the joining system characterized by ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The joining device includes a stage that adsorbs and fixes the substrate holder on a placement surface, The substrate holder includes a plate-shaped base that places the monolithic substrate on an upper surface and adsorbs and fixes the lower surface to the placement surface of the stage; and A positioning member is provided on the base to define the position of the monolithic substrate placed on the upper surface of the base, The upper surface of the base is a flat surface, The positioning member is a plate-shaped member formed with at least one opening for inserting the monolithic substrate, and is coincident with the upper surface of the base in a manner that the opening constitutes a recess that defines the placement position of the monolithic substrate, The stage includes an adsorption hole, The base is provided with a through hole that penetrates in the thickness direction in the region where the monolithic substrate is placed, The through hole communicates with the adsorption hole provided in the stage when the lower surface is adsorbed and fixed on the placement surface, and adsorbs and fixes the monolithic substrate on the upper surface of the base, Wherein, the entire surface of the monolithic substrate is held by the upper surface of the region of the recess of the base, and is adsorbed and fixed on the upper surface through the through hole.

7. A joining system comprising: a joining device that joins semiconductor chips to a monolithic substrate; and a substrate holder that holds the monolithic substrate, and the joining system is characterized in that the joining device includes a stage that adsorbs and fixes the substrate holder on a placement surface, the substrate holder includes a plate-shaped base that places the monolithic substrate on an upper surface and adsorbs and fixes the lower surface to the placement surface of the stage; and a positioning member is provided on the base to define the position of the monolithic substrate placed on the upper surface of the base, the upper surface of the base is a flat surface, the positioning member is a plate-shaped member formed with at least one opening for inserting the monolithic substrate, and is coincident with the upper surface of the base in a manner that the opening constitutes a recess that defines the placement position of the monolithic substrate, the substrate holder places a plurality of the monolithic substrates on the upper surface, the positioning member respectively defines the position of a plurality of the monolithic substrates placed on the upper surface of the base, the stage includes at least one adsorption hole, the base is respectively provided with a through hole that penetrates in the thickness direction in each region where a plurality of the monolithic substrates are placed, each of the through holes communicates with at least one of the adsorption holes when the lower surface is adsorbed and fixed on the placement surface, and respectively adsorbs and fixes each of the monolithic substrates on the upper surface of the base, wherein the entire surface of each of the monolithic substrates is held by the upper surface of the region of the recess of the base, and is adsorbed and fixed on the upper surface through each of the through holes.

8. The joining system according to claim 7, wherein the base is provided with a groove on the lower surface that communicates a plurality of the through holes.

9. The joining system according to claim 6 or 7, wherein for the base, the upper flatness value of the upper surface and the lower flatness value of the lower surface are below a reference flatness value, and the thickness deviation is below a reference deviation.

10. The bonding system according to claim 6 or 7, wherein the base is a ceramic member whose upper surface and lower surface are polished, the positioning member is made of metal.

11. A bonding method of bonding semiconductor chips to single-chip substrates, the bonding method comprising: The preparation process prepares a substrate holder and a bonding device, the substrate holder including: a base on which an upper surface of a plurality of the single-chip substrates is placed; and a positioning member provided on the base to define a position of each of the plurality of the single-chip substrates placed on the upper surface of the base, wherein the substrate holder has a through-hole penetrating in a thickness direction provided in each region where the plurality of the single-chip substrates is placed, the upper surface of the base is a flat surface, the positioning member is a plate-shaped member having at least one opening into which the single-chip substrate is fitted, and the positioning member is overlaid on the upper surface of the base so that the opening constitutes a recess that defines the placement position of the single-chip substrate, the bonding apparatus includes a stage having at least one suction hole, and the semiconductor chip is pressed against the single-chip substrate and bonded; a placement process of placing the plurality of the single-chip substrates on a placement surface of the substrate holder so that each of the through-holes communicates with at least one of the suction holes, and placing the substrate holder on a placement surface of the stage; a suction-fixing process of setting at least one of the suction holes of the bonding apparatus to a vacuum, suction-fixing the substrate holder to the placement surface of the stage, and suction-fixing each of the single-chip substrates to the upper surface of the base, wherein an entire surface of each of the single-chip substrates is held by the upper surface of the region of the recess of the base and is suction-fixed to the upper surface through each of the through-holes; and a bonding process of sequentially bonding the semiconductor chips to the plurality of the single-chip substrates. the bonding apparatus includes a placement table on which the plurality of the single-chip substrates is placed on the placement surface of the substrate holder, 12. The bonding method according to claim 11, wherein, the placement process uses the placement table to place the plurality of the single-chip substrates on the placement surface of the substrate holder, and then conveys the substrate holder on which the plurality of the single-chip substrates is placed to the stage, and places the conveyed substrate holder on the placement surface of the stage. ​

Images