Semiconductor power module and power device

Abstract

The application provides a semiconductor power module and a power device, the power module comprising a backing plate, the surface of the backing plate having a plurality of metal layers arranged in sequence along a first direction, the metal layers comprising at least a first metal layer, a second metal layer and a third metal layer arranged in sequence; the first metal layer and the third metal layer are strips extending along a second direction perpendicular to the first direction, the second metal layer is adjacent to the first metal layer and the third metal layer, and the widths of the second metal layer and the backing plate in the second direction match each other. Based on the technical scheme of the application, the number of small-area metal islands is reduced and integrated by layout design of the metal layers, the utilization rate of the surface space of the backing plate is improved, the area of one of the at least metal layers is maximized as a chip welding area, thereby reducing the thermal resistance of the device, improving the current level of the device, and meeting the requirements of the semiconductor power module for bearing large current and high voltage.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a semiconductor power module and power device. Background Technology

[0002] IGBT modules offer a range of advantages, including fast switching speeds, large capacity, low saturation voltage, and voltage-driven operation, making them increasingly popular in industrial and new energy sectors. In recent years, the power semiconductor industry has developed rapidly, with new devices being released at an accelerated pace. Market applications demand higher standards for the voltage and current ratings of semiconductor modules. Furthermore, there are increasing requirements for environmental adaptability, requiring power semiconductor modules to operate for extended periods in harsh environments with high temperatures and humidity, and to possess sufficient resistance to temperature shocks. These requirements pose significant challenges to the technologies related to heat dissipation, insulation, soldering, and sealing of power semiconductor modules. To achieve this, packaging requires larger chip areas, more reliable terminal soldering methods, and better sealing performance.

[0003] Traditional semiconductor module substrates often have numerous islands in their metal layers used for signal jumpers, which reduces the solderable area of ​​the chip and hinders the improvement of current ratings. Therefore, proper layout design of the substrate's surface metal layers is one of the key technologies in semiconductor power device packaging design. Summary of the Invention

[0004] To address the problem of unreasonable substrate metal layer layout in existing semiconductor power modules, this invention proposes a semiconductor power module and power device.

[0005] In a first aspect, the present invention provides a semiconductor power module, including a substrate, the surface of which has a plurality of metal layers sequentially distributed along a first direction, the metal layers including at least a first metal layer, a second metal layer and a third metal layer sequentially distributed.

[0006] Both the first metal layer and the third metal layer are strips extending along a second direction perpendicular to the first direction. The second metal layer is adjacent to the first metal layer and the third metal layer, and the width of the second metal layer and the liner in the second direction matches each other.

[0007] In one embodiment, the width of the third metal layer in the second direction is smaller than the width of the liner in the second direction, and bonding regions extend from both sides of the portion of the second metal layer that is close to the third metal layer, with the two bonding regions located at both ends of the third metal layer.

[0008] In one embodiment, a plurality of the liner plates are arrayed on a substrate and divided into a plurality of liner plate groups arranged along the second direction. Each liner plate group includes two liner plates arranged opposite each other along the first direction. The metal layer layout structure of the two liner plates in the same liner plate group is symmetrical to each other and the third metal is close to the axis of symmetry.

[0009] In one embodiment, a plurality of auxiliary liner plates are disposed on the substrate around the periphery of the plurality of liner plate distribution areas, and the auxiliary liner plates are located close to the first metal layer of the liner plates.

[0010] In one embodiment, the system further includes a housing, the housing comprising a side frame fixed to a substrate on which the liner is located and a top cover fastened to the side frame, an assembly seat extending from the inner wall of the side frame above the liner, a busbar connected to the metal layer of the liner passing through the assembly seat and the top cover, and a sealing structure provided on the assembly seat and the top cover at the location where the busbar passes through.

[0011] In one embodiment, the sealing structure includes a sealing groove disposed on the upper surface of the mounting base, the bottom of the sealing groove having a first female row hole, the inner wall of the top cover having an insertion part that can be inserted downward into the sealing groove, and the insertion part having a second female row hole corresponding to the first female row hole;

[0012] The sealing groove contains a sealing adhesive, and the insertion part can squeeze the sealing adhesive into the gap between the hole wall of the first busbar hole and the hole wall of the second busbar hole and the busbar when it is inserted into the sealing groove, so as to seal the gap after curing.

[0013] In one embodiment, the outer wall of the plug portion and the wall of the second female connector hole are both inclined surfaces that are relatively vertical and face the sealing groove, and the inclination angle of the wall of the second female connector hole relative to the vertical direction is greater than the inclination angle of the outer wall of the plug portion relative to the vertical direction.

[0014] In one embodiment, the size of the opening formed by the second female busbar hole at the end of the plug portion is larger than the size of the opening formed by the first female busbar hole at the bottom of the sealing groove.

[0015] In one embodiment, an auxiliary emitter bus terminal is further included, wherein the auxiliary emitter bus terminal is connected to the metal layer on the liner at a position relative to the center of the liner.

[0016] Secondly, the present invention proposes a power device that includes the aforementioned semiconductor power module, thereby possessing all of its technical effects.

[0017] The above-mentioned technical features can be combined in various suitable ways or replaced by equivalent technical features, as long as the purpose of the present invention can be achieved.

[0018] The semiconductor power module and power device provided by the present invention have at least the following advantages compared with the prior art:

[0019] The present invention discloses a semiconductor power module and power device. By designing the layout of the metal layers, the number of small-area metal islands is reduced and integrated, thereby improving the utilization rate of the substrate surface space and maximizing the area of ​​at least one metal layer as a chip bonding area. This increases the overall area of ​​the chip bonding area, thereby reducing the thermal resistance of the device and improving the current rating of the device to meet the requirements of semiconductor power modules that can withstand high current and high voltage. Attached Figure Description

[0020] The invention will now be described in more detail with reference to embodiments and the accompanying drawings.

[0021] Figure 1 A schematic diagram of the structure of the liner of the power module of the present invention is shown;

[0022] Figure 2 This diagram shows the structure of the power module of the present invention after the chip is bonded to the substrate;

[0023] Figure 3 A schematic diagram showing the layout structure of multiple liner plates on a substrate in the power module of the present invention is displayed.

[0024] Figure 4 A schematic diagram of the external structure of the power module of the present invention is shown;

[0025] Figure 5 Showing Figure 4 The cross-sectional view of the structure shown;

[0026] Figure 6 Showing Figure 5 A magnified view of a portion of the structure shown at point X;

[0027] Figure 7 Showing Figure 4 A magnified view of a portion of the structure shown, specifically at point Y.

[0028] In the accompanying drawings, the same parts use the same reference numerals. The drawings are not to scale.

[0029] Figure label:

[0030] 1-Backing plate, 11-First metal layer, 12-Second metal layer, 121-Bonding area, 13-Third metal layer, 14-Bonding line, 2-Substrate, 3-Auxiliary backing plate, 4-Outer shell, 41-Side frame, 411-Assembly base, 412-First busbar hole, 413-Sealing groove, 414-Reinforcing rib, 42-Top cover, 421-Plug-in part, 422-Second busbar hole, 5-Sealing colloid, 6-Busbar, 7-Auxiliary emitter busbar terminal, 8-Gate busbar terminal, 9-Auxiliary collector busbar terminal. Detailed Implementation

[0031] The invention will now be further described with reference to the accompanying drawings.

[0032] An embodiment of the present invention provides a semiconductor power module, including a substrate 1. The surface of the substrate 1 has a plurality of metal layers sequentially distributed along a first direction. The metal layers include at least a first metal layer 11, a second metal layer 12 and a third metal layer 13 sequentially distributed.

[0033] Both the first metal layer 11 and the third metal layer 13 are strips extending along a second direction perpendicular to the first direction. The second metal layer 12 is adjacent to the first metal layer 11 and the third metal layer, and the width of the second metal layer 12 and the liner 15 in the second direction are matched.

[0034] Specifically, as shown in the attached diagram. Figure 1 As shown, the power module of the present invention first designs the layout structure of the metal layers on the substrate 1, and regularizes the layout structure of the metal layers. Specifically, the metal layers are first arranged in one direction; in this embodiment, they are arranged in the first direction (see attached figure). Figure 1 (in the vertical direction), this allows for the existence of only one metal layer in a localized location, so in the second direction perpendicular to the first direction (see attached diagram) Figure 1 In the left and right directions, there is only one metal layer. The width of the metal layer can be widened to match the width of the liner 1, and the space occupied by the gap between two adjacent metal layers in the second direction is eliminated.

[0035] In this embodiment, both the first metal layer 11 and the third metal layer 13 are configured as strip structures. Therefore, in the first direction, the first metal layer 11 and the third metal layer 13 occupy a small space, allowing most of the central area of ​​the substrate 1 to be used for the second metal layer 12. The second metal layer 12 is adjacent to the first and third metal layers 13, thus expanding the width of the second metal layer 12 in the first direction. Furthermore, in the second direction, there are no other metal layers on either side of the second metal layer 12, allowing the width of the second metal layer 12 to be maximized to match the width of the substrate 1 (matching here means equal or nearly equal width). This results in only a very small area of ​​isolated metal layers on the substrate 1 used for the bonding wires 14 jumpers, maximizing the area available for chip bonding. (See attached Figure 0.) Figure 2 As shown, by configuring the layout of the metal layers, the number of small metal islands is reduced and they are integrated.

[0036] Improving the utilization rate of the surface space of the substrate 1 and maximizing the area of ​​at least one metal layer will maximize the area of ​​the chip bonding area, thereby reducing the thermal resistance of the device, improving the current rating of the device, and meeting the requirements of semiconductor power modules that can withstand high current and high voltage.

[0037] Furthermore, the liner 1 can be a DBC, DBA, or AMB liner. Among them, the metal layer of the DBC and DBA liners can be a metal material such as copper, copper-molybdenum, or aluminum, and the insulating layer can be a ceramic material such as Al2O3 or AlN (the ceramic can be doped with oxides such as ZrO2 to enhance the thermal conductivity or structural strength of the insulating layer); the insulating layer of the AMB liner can be Si3N4 or other ceramic materials.

[0038] Preferably, the width of the third metal layer 13 in the second direction is smaller than the width of the liner 1 in the second direction, and bonding regions 121 extend from both sides of the portion of the second metal layer 12 and the third metal layer 13 that are close to each other, and the two bonding regions 121 are located at both ends of the third metal layer 13.

[0039] Specifically, as shown in the attached diagram. Figure 2 As shown, in combination with the purpose of each metal layer, the third metal layer 13 is only used as the bonding area 121 of the busbar 6 terminal, so its area does not need to be too large, thereby reducing its width in the second direction and creating space to form the bonding area 121 of the second metal layer 12, which is used to realize the bonding between the busbar 6 terminal and the second metal layer 12.

[0040] In one embodiment, a plurality of liner plates 1 are arrayed on a substrate 2 and are divided into a plurality of liner plate groups arranged along a second direction. Each liner plate group includes two liner plates 1 arranged opposite to each other along a first direction. The metal layer layout structure of the two liner plates 1 in the same liner plate group is symmetrical to each other and the third metal is close to the axis of symmetry.

[0041] Specifically, as shown in the attached diagram. Figure 3 As shown, the substrate 1 on the substrate 2 is symmetrically distributed, and the third metal layer 13 of the substrate 1 in the two sets of substrate 1 are close to each other, so as to utilize the connection between the busbar 6 terminals and the metal layer of the corresponding substrate 1. The substrate 2 itself can be a pure metal structure (such as copper or aluminum alloy) or AlSiC material. To enhance the oxidation and corrosion resistance of the heat dissipation base plate, a protective layer (such as nickel plating) can also be added to its surface.

[0042] In one embodiment, a plurality of auxiliary liner plates 3 are disposed on the substrate 2 around the distribution area of ​​the plurality of liner plates 1, and the auxiliary liner plates 3 are located close to the first metal layer 11 of the liner plates 1.

[0043] Specifically, as shown in the attached diagram. Figure 3 As shown, the auxiliary substrate 3 is used to bond some auxiliary control terminals of the power module, and since the first metal layer 11 serves as the control signal concentration point for the chip, as shown in the attached figure... Figure 3 As shown, the auxiliary liner 3 is close to the first metal layer 11, which also facilitates the circuit layout.

[0044] In one embodiment, the housing 4 is further included. The housing 4 includes a side frame 41 fixed to the substrate 2 on which the liner 1 is located and a top cover 42 fastened to the side frame 41. An assembly seat 411 extends from the inner wall of the side frame 41 and is located above the liner 1. A busbar 6 connected to the metal layer of the liner 1 passes through the assembly seat 411 and the top cover 42. A sealing structure is provided on the assembly seat 411 and the top cover 42 at the position where the busbar 6 passes through.

[0045] Specifically, to facilitate the later assembly and installation of the entire power module, the power module's outer casing 4 adopts a split structure. Furthermore, in traditional assembly structures, the busbar 6 only needs to pass through the top cover 42, resulting in only one limiting structure between the busbar 6 and the outer casing 4, limiting the structural reliability. Moreover, the limited space at this point, with only one limiting structure in the top cover 42, makes it difficult to construct a reliable sealing structure. Therefore, this embodiment designs the side frame 41 so that it extends inward to form a mounting base 411, as shown in the attached diagram. Figure 5As shown, the mounting base 411 is located directly above the liner 1. The busbar 6 needs to pass through the top cover 42 and the mounting base 411 in sequence (the top cover 42 and the mounting base 411 are respectively provided with busbar 6 holes for the busbar 6 to pass through) to connect with the liner 1. This structural design, on the one hand, increases the limiting structure between the outer shell 4 and the busbar 6, and the two limiting structures improve the reliability of the structure; on the other hand, it also increases the overall space of the limiting structure between the busbar 6 and the outer shell 4, which can further fully construct the sealing structure, improve the sealing performance of the gap between the busbar 6 and the outer shell 4, and prevent external moisture and impurities from entering the module through the gap and affecting the normal operation of the module.

[0046] Preferably, as shown in the attached figure Figure 4 , Figure 5 and Figure 7 As shown, the inner and outer sides of the side frame 41 have relatively protruding reinforcing ribs 414. The reinforcing ribs 414 extend continuously along the circumference of the side frame 41, mainly to strengthen the structural strength of the side frame 41. After all, the side frame 41 is a rectangular frame structure, which is very easy to deform under external force.

[0047] Furthermore, the sealing structure includes a sealing groove 413 disposed on the upper surface of the mounting base 411. The bottom of the sealing groove 413 has a first female row hole 412. The inner wall of the top cover 42 has an insertion part 421 that can be inserted downward into the sealing groove 413. The insertion part 421 has a second female row hole 422 corresponding to the first female row hole 412.

[0048] The sealing groove 413 contains a sealing adhesive 5, and the insertion part 421 can squeeze the sealing adhesive 5 into the gap between the hole wall of the first female row hole 412 and the hole wall of the second female row hole 422 and the female row 6 when it is inserted into the sealing groove 413, so as to seal the gap after curing.

[0049] Specifically, as shown in the attached diagram. Figure 5 and Figure 6 As shown, the sealing structure mainly includes a recessed sealing groove 413 formed on the upper surface of the mounting base 411 and an insertion portion 421 extending from the inner surface of the top cover 42. The first female connector hole 412 penetrates the mounting base 411 from the bottom of the sealing groove 413 and corresponds to the liner 1 below. The second female connector hole 422 penetrates the insertion portion 421. When the top cover 42 is closed onto the side frame 41, the end of the insertion portion 421 is inserted into the sealing groove 413. This structurally limits the assembly structure of the top cover 42 and the side frame 41, improving the stability of the structure. At this time, the first female connector hole 412 also corresponds to the second female connector hole 422, thereby forming a channel for the female connector 6 to pass through. The core part of the sealing structure is set in the formed channel.

[0050] Specifically, before the top cover 42 is closed onto the side frame 41, the lower part of the busbar 6 has already passed through the first busbar hole 412 on the mounting base 411 of the side frame 41. At this time, there is a gap between the busbar 6 and the first busbar hole 412 at the opening formed at the bottom of the sealing groove 413, which squeezes the sealing colloid 5 into the sealing groove 413. Due to the certain viscosity and surface tension of the sealing colloid 5, the sealing colloid 5 will not flow down from the gap of the first busbar hole 412, but will accumulate in the sealing groove 413. Then, the top cover 42 is closed onto the side frame 41. The upper part of the busbar 6 enters the second busbar hole 422 of the insertion part 421 of the top cover 42. At the same time, the end of the insertion part 421 is inserted into the sealing groove 413. At this time, the end of the insertion part 421 occupies part of the original space in the sealing groove 413 and squeezes the sealing colloid 5. The sealing colloid 5 then enters the second busbar hole 422 through the opening formed at the end of the insertion part 421, thereby sealing the gap between the second busbar hole 422 and the busbar 6. At the same time, the sealing colloid 5 also enters other gaps, such as the gap between the end of the insertion part 421 and the groove wall of the sealing groove 413. Thus, by utilizing the fluidity of the sealing colloid 5 itself, it can automatically enter all gaps between the insertion part 421, the sealing groove 413, and the busbar 6 under pressure, as shown in the attached figure. Figure 6 As shown, this seals the gap between the busbar 6 and the outer casing 4, effectively preventing external moisture and impurities from entering the module through the gap and affecting its normal operation.

[0051] Preferably, the length of the insertion part 421 is less than the distance from the top cover 42 to the bottom of the sealing groove 413 when the top cover 42 is closed onto the side frame 41. This way, the end of the insertion part 421 will not contact the bottom of the sealing groove 413 when inserted into it, thereby forming a certain gap for the sealing adhesive 5 to flow through. It also allows the sealing adhesive 5 to form an integral seal after curing, as shown in the attached figure. Figure 6 As shown, this integral seal can improve the reliability of the seal. For example, even if there is a gap at the second female gate 422 that is not completely sealed, external factors cannot directly enter the module through the second female gate 422. This is because the integral seal formed by the sealing colloid 5 after curing also forms a barrier in the sealing groove 413, which isolates the second female gate 422 from the first female gate 412, thus making its sealing more reliable.

[0052] Furthermore, in this embodiment, the sealing structure mainly seals the gap at the busbar 6, while the sealing of the portion where the top cover 42 and the side frame 41 meet is achieved through other structures. (See attached diagram.) Figure 5 and Figure 7As shown, the top cover 42 and the side frame 41 are also provided with a sealing structure. The sealing structure can be achieved by using a prefabricated sealing ring or other structure; of course, it is also preferable to use the same method of injecting sealing glue 5, which is cured after the cover is closed to achieve a seal.

[0053] In one embodiment, the outer wall of the plug portion 421 and the wall of the second female connector hole 422 are both inclined surfaces that are relatively vertical and face the sealing groove 413, and the inclination angle of the wall of the second female connector hole 422 relative to the vertical is greater than the inclination angle of the outer wall of the plug portion 421 relative to the vertical.

[0054] Specifically, as shown in the attached diagram. Figure 6 As shown, the plug-in portion 421 has a tapered structure with its outer diameter gradually decreasing along the outward extension direction. Specifically, its outer wall is an inclined surface that slopes towards the sealing groove 413 relative to the vertical direction. The second female connector hole 422 inside the plug-in portion 421 is a tapered structure with its inner diameter gradually increasing along the outward extension direction of the plug-in portion 421. The purpose of these two inclined surfaces is twofold: firstly, to reduce the inner and outer dimensions of the end of the plug-in portion 421, thus reducing the area of ​​the portion that initially contacts the sealing compound 5, preventing excessive compression due to an excessively large contact area. The transitional nature of the inclined surfaces gradually increases the degree of compression. Secondly, the inclined surface design enlarges the opening of structures such as the second female connector hole 422, facilitating the entry of the sealing compound 5 into gaps such as the gap between the second female connector hole 422 and the female connector 6. Finally, the enlarged opening of the second female connector hole 422 also facilitates and guides the female connector 6 into the second female connector hole 422. Furthermore, the inclination angle of the wall of the second female connector hole 422 relative to the vertical direction is further designed to be greater than the inclination angle of the outer wall of the plug part 421 relative to the vertical direction. This is to make the size of the space corresponding to the second female connector hole 422 on the inner side of the plug part 421 greater than the size of the space between the outer side of the plug part 421 and the sealing groove 413, so that more sealing adhesive 5 can enter the second female connector hole 422 and enhance the sealing performance at the second female connector hole 422. After all, the second female connector hole 422 is the entrance for external influencing factors to enter the module.

[0055] In one embodiment, the size of the opening formed by the second female connector hole 422 at the end of the insertion portion 421 is larger than the size of the opening formed by the first female connector hole 412 at the bottom of the sealing groove 413.

[0056] Specifically, as shown in the attached diagram. Figure 6As shown, at the position where the second female row hole 422 and the first female row hole 412 are close to each other, the opening of the second female row hole 422 is larger than the opening of the first female row hole 412. This is to allow more sealing strip to enter the second female row hole 422, and to reduce the opening of the first female row hole 412 to prevent the sealing strip from overcoming its own adhesion and surface tension limitations and flowing down from the first female row hole 412 to the liner 1.

[0057] In one embodiment, an auxiliary emitter busbar terminal 7 is also included, and the auxiliary emitter busbar terminal 7 is connected to the metal layer on the liner 1 at a position located at the center of the liner 1.

[0058] Specifically, the auxiliary emitter signal sampling point of traditional IGBT modules is rather arbitrary, and the short-circuit capability of the IGBT module is not improved through packaging improvements. (See attached diagram) Figure 4 As shown, the auxiliary emitter bus terminal 7 of the power module of the present invention is located in the middle of the substrate 1 to lead out the auxiliary emitter signal, which can effectively improve the common emitter inductance of the IGBT module and improve the short-circuit withstand capability of the power module. At the same time, the gate bus terminal 8 and the auxiliary collector bus terminal 9 of the power module are also located near the auxiliary emitter bus terminal 7. All three terminals are welded to the corresponding substrate 1 using ultrasonic welding technology. Ultrasonic welding can effectively improve the connection strength between the terminals and the corresponding substrates and improve the passive thermal cycling capability of the power module.

[0059] Embodiments of the present invention also provide a power device, including the aforementioned semiconductor power module, thereby possessing all of its technical effects.

[0060] In the description of this invention, it should be understood that the terms "upper", "lower", "bottom", "top", "front", "rear", "inner", "outer", "left", "right", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0061] While the invention has been described herein with reference to specific embodiments, it should be understood that these embodiments are merely examples of the principles and applications of the invention. Therefore, it should be understood that many modifications can be made to the exemplary embodiments, and other arrangements can be designed without departing from the spirit and scope of the invention as defined by the appended claims. It should be understood that different dependent claims and features described herein can be combined in ways different from those described in the original claims. It is also understood that features described in conjunction with individual embodiments can be used in other described embodiments.

Claims

1. A semiconductor power module, characterized in that, It includes a liner and a housing, wherein the surface of the liner has a plurality of metal layers distributed sequentially along a first direction, and the metal layers include at least a first metal layer, a second metal layer and a third metal layer distributed sequentially. Both the first metal layer and the third metal layer are strips extending along a second direction perpendicular to the first direction. The second metal layer is adjacent to the first metal layer and the third metal layer, and the width of the second metal layer and the liner in the second direction matches each other. The housing includes a side frame fixed to the base plate on which the liner is located and a top cover fastened to the side frame. An assembly seat extends from the inner wall of the side frame and is located above the liner. A busbar connected to the metal layer of the liner passes through the assembly seat and the top cover. A sealing structure is provided on the assembly seat and the top cover at the position where the busbar passes through. The sealing structure includes a sealing groove disposed on the upper surface of the mounting base. The bottom of the sealing groove has a first female connector hole. The inner wall of the top cover has a plug-in portion that can be inserted downward into the sealing groove. The plug-in portion has a second female connector hole corresponding to the first female connector hole. The sealing groove contains a sealing adhesive, and the insertion part can squeeze the sealing adhesive into the gap between the hole wall of the first busbar hole and the hole wall of the second busbar hole and the busbar when it is inserted into the sealing groove, so as to seal the gap after curing.

2. The semiconductor power module according to claim 1, characterized in that, The width of the third metal layer in the second direction is smaller than the width of the liner in the second direction. Bonding regions extend from both sides of the portion of the second metal layer that is close to the third metal layer, and the two bonding regions are located at both ends of the third metal layer.

3. The semiconductor power module according to claim 1 or 2, characterized in that, Multiple liner plates are arrayed on a substrate and divided into multiple liner plate groups arranged along the second direction. Each liner plate group includes two liner plates arranged opposite each other along the first direction. The metal layer layout structure of the two liner plates in the same liner plate group is symmetrical to each other and the third metal is close to the axis of symmetry.

4. The semiconductor power module according to claim 3, characterized in that, The substrate has multiple auxiliary liner plates disposed around the distribution area of ​​the multiple liner plates, and the auxiliary liner plates are located close to the first metal layer of the liner plates.

5. The semiconductor power module according to claim 1, characterized in that, The outer wall of the plug and the wall of the second female connector are both inclined surfaces relative to the vertical direction and facing the sealing groove, and the inclination angle of the wall of the second female connector relative to the vertical direction is greater than the inclination angle of the outer wall of the plug relative to the vertical direction.

6. The semiconductor power module according to claim 1 or 5, characterized in that, The size of the opening formed by the second female busbar hole at the end of the plug-in portion is larger than the size of the opening formed by the first female busbar hole at the bottom of the sealing groove.

7. The semiconductor power module according to claim 1, characterized in that, It also includes an auxiliary emitter busbar terminal, wherein the auxiliary emitter busbar terminal is connected to the metal layer on the liner at a position located at the center of the liner.

8. A power device, characterized in that, Includes the semiconductor power module as described in any one of claims 1 to 7.

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