Light emitting device and method of fabricating the same

Abstract

The present disclosure provides a light emitting device and a preparation method thereof, and belongs to the technical field of optoelectronic manufacturing. The light emitting device comprises a substrate, a light emitting structure and a cover layer. The light emitting structure is located on a bearing surface of the substrate, and the cover layer covers the outside of the light emitting structure. The cover layer has a gap between the orthographic projection of the bearing surface and the edge of the bearing surface. Since the cover layer has a gap between the orthographic projection of the bearing surface of the substrate and the edge of the bearing surface, that is, the cover layer does not completely cover the substrate, and the edge of the substrate is exposed outside the cover layer, the scribing can be performed on the area of the substrate which is not covered by the cover layer, thereby avoiding the difficult separation of the light emitting diode chip during scribing, and facilitating the yield improvement.

Description

Technical Field

[0001] This disclosure relates to the field of optoelectronic manufacturing technology, and in particular to a light-emitting device and its fabrication method. Background Technology

[0002] Light-emitting diodes (LEDs) are highly influential new products in the optoelectronics industry. They are characterized by their small size, long lifespan, rich and colorful colors, and low energy consumption, and are widely used in display devices.

[0003] Miniature light-emitting diode (LED) chips are small in size, and multiple chips are sometimes fabricated together during manufacturing. For example, when used to make display panels, red, green, and blue chips can be fabricated together to form a three-color chip. During the fabrication of such LED chips, films made of organic materials are usually formed, such as capping layers covering multiple miniature chips.

[0004] These organic materials can provide some protection, but they also have some elasticity. During laser scribing, this can make it difficult to separate the LED chips, affecting the product yield. Summary of the Invention

[0005] This disclosure provides a light-emitting device and its fabrication method, which can avoid the difficulty in separating light-emitting diode chips during dicing. The technical solution is as follows:

[0006] On one hand, embodiments of this disclosure provide a light-emitting device, the light-emitting device including a substrate, a light-emitting structure and a cover layer, the light-emitting structure being located on a support surface of the substrate, the cover layer covering the light-emitting structure, and the cover layer having a gap between its orthographic projection on the support surface and the edge of the support surface.

[0007] Optionally, the cover layer includes a first cover layer and a second cover layer, wherein the first cover layer covers the outside of the light-emitting structure, and the second cover layer is located on the side of the first cover layer and on the surface away from the substrate.

[0008] Optionally, the light-emitting device further includes a conductive layer located on the surface of the first cover layer away from the substrate, and the light-emitting device includes a plurality of light-emitting structures, each of the plurality of light-emitting structures having one electrode electrically connected to the conductive layer through a via.

[0009] Optionally, the light-emitting device further includes a plurality of welding electrodes located on the surface of the second cover layer away from the substrate;

[0010] The conductive layer is electrically connected to one of the plurality of welding electrodes through a via, and the other electrode of each of the plurality of light-emitting structures is electrically connected to the other welding electrodes among the plurality of welding electrodes through a via.

[0011] Optionally, the plurality of welding electrodes are located at the corners of the surface of the second cover layer away from the substrate.

[0012] Optionally, the light-emitting device further includes a carrier layer located on the carrier surface, and the orthographic projection of the carrier layer on the carrier surface lies within the orthographic projection of the cover layer on the carrier surface, with the light-emitting structure located on the surface of the carrier layer away from the substrate.

[0013] Optionally, the gap between the orthographic projection of the covering layer onto the bearing surface and the edge of the bearing surface is 5 μm to 50 μm.

[0014] On the other hand, this disclosure also provides a method for fabricating a light-emitting device, the method comprising:

[0015] Provide a substrate;

[0016] Multiple light-emitting structures are formed on the bearing surface of the substrate, each group including at least one light-emitting structure;

[0017] Multiple covering layers are formed on the bearing surface, the multiple covering layers are distributed at intervals with each other, and the multiple covering layers respectively cover the multiple sets of light-emitting structures;

[0018] Multiple light-emitting devices are formed by dicing along the gaps between the multiple cover layers.

[0019] Optionally, forming multiple light-emitting structures on the bearing surface of the substrate includes:

[0020] Multiple carrier layers are formed on the carrier surface of the substrate, and the multiple carrier layers are distributed at intervals between each other;

[0021] The plurality of light-emitting structures are formed on the surfaces of the plurality of carrier layers away from the substrate, and a set of light-emitting structures is formed on each of the carrier layers.

[0022] Optionally, forming multiple carrier layers on the carrier surface of the substrate includes:

[0023] An organic material film is formed on the bearing surface of the substrate;

[0024] The organic material film is processed using a patterning process to form the multiple support layers.

[0025] The beneficial effects of the technical solutions provided in this disclosure include at least the following:

[0026] By setting a light-emitting structure and a cover layer on the substrate's support surface, with the cover layer covering the light-emitting structure, and since there is a gap between the orthographic projection of the cover layer onto the substrate's support surface and the edge of the support surface, meaning that the cover layer does not completely cover the substrate and the edge of the substrate is exposed outside the cover layer, dicing can be performed on the area of ​​the substrate not covered by the cover layer. This avoids the situation where the light-emitting diode chips are difficult to separate during dicing, which is beneficial to improving the yield. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a schematic diagram of the structure of a light-emitting device provided in an embodiment of this disclosure;

[0029] Figure 2 This is a top view of a light-emitting device provided in an embodiment of this disclosure;

[0030] Figure 3 This is a flowchart of a method for fabricating a light-emitting device provided by an embodiment of the present disclosure;

[0031] Figure 4 This is a flowchart of a method for fabricating a light-emitting device provided by an embodiment of the present disclosure;

[0032] Figure 5 This is a schematic diagram illustrating the fabrication process of the light-emitting device provided in the embodiments of this disclosure. Detailed Implementation

[0033] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0034] Figure 1 This is a schematic diagram of the structure of a light-emitting device provided in an embodiment of this disclosure. Figure 1 As shown, the light-emitting device includes a substrate 10, a light-emitting structure 20, and a cover layer 30. The light-emitting structure 20 is located on the bearing surface of the substrate 10, and the cover layer 30 covers the light-emitting structure 20.

[0035] Figure 2 This is a top view of a light-emitting device provided in an embodiment of this disclosure. Figure 2 As shown, the cover layer 30 has a gap A between the orthographic projection of the bearing surface and the edge of the bearing surface.

[0036] By setting a light-emitting structure 20 and a cover layer 30 on the carrier surface of the substrate 10, the cover layer 30 covers the light-emitting structure 20. Since there is a gap A between the orthographic projection of the cover layer 30 on the carrier surface of the substrate 10 and the edge of the carrier surface, that is, the cover layer 30 does not completely cover the substrate 10, and the edge of the substrate 10 is exposed outside the cover layer, the dicing can be performed on the area of ​​the substrate 10 not covered by the cover layer 30, thereby avoiding the difficulty of separating the light-emitting diode chips during dicing, which is beneficial to improving the yield.

[0037] Optionally, the gap A between the orthographic projection of the cover layer 30 onto the bearing surface of the substrate 10 and the edge of the bearing surface is 5 μm to 50 μm.

[0038] The gap A between the edge of the capping layer 30 and the edge of the substrate 10 will affect the dicing process. If the gap A is too small, it will be difficult to dicing. If the gap A is too large, the number of light-emitting devices that can be processed per unit area of ​​the substrate 10 during fabrication will be reduced.

[0039] In this embodiment of the disclosure, the bearing surface of the substrate 10 is rectangular, and the orthographic projection of the cover layer 30 onto the bearing surface of the substrate 10 is also rectangular. The gaps A between the four sides of the orthographic projection of the cover layer 30 onto the bearing surface of the substrate 10 and the four sides of the substrate 10 are equal, and are all 5μm to 50μm.

[0040] For example, the gap A is 20 μm.

[0041] In this embodiment of the disclosure, the substrate 10 may be a transparent substrate, such as a sapphire substrate. The light-emitting surface of the light-emitting device may be located on the side of the substrate 10 away from the light-emitting structure 20, that is, the light emitted by the light-emitting structure 20 is emitted from the side of the substrate 10 away from the light-emitting structure 20.

[0042] like Figure 1 As shown in the embodiments of this disclosure, the light-emitting device includes three light-emitting structures 20, which are arranged in a straight line. These three light-emitting structures 20 are a red light-emitting structure emitting red light, a red light-emitting structure emitting green light, and a red light-emitting structure emitting blue light, respectively.

[0043] The light-emitting structure 20 may include a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. One of the first and second semiconductor layers may be an N-type semiconductor layer, and the other may be a P-type semiconductor layer. The light-emitting layer may include a multi-quantum-well layer. For light-emitting structures 20 of different colors, the materials of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer may be different.

[0044] For example, the size of the light-emitting structure 20 can be 2μm to 10μm. Here, the size refers to the length of the light-emitting structure 20, that is, the length of the longer side of the orthographic projection of the light-emitting structure 20 onto the bearing surface of the substrate 10.

[0045] like Figure 1 As shown, a carrier layer 11 may also be disposed on the carrier surface of the substrate 10. The carrier layer 11 is located on the carrier surface of the substrate 10, and the orthographic projection of the carrier layer 11 on the carrier surface lies within the orthographic projection of the cover layer 30 on the carrier surface of the substrate 10. That is, the carrier layer 11 is covered by the cover layer 30. The light-emitting structure 20 is located on the surface of the carrier layer 11 away from the substrate 10.

[0046] The light-emitting structures 20 of different colors are usually fabricated separately and then transferred to the substrate 10 after fabrication. The carrier layer 11 serves to connect the light-emitting structure 20 to the substrate 10, so that the light-emitting structure 20 is firmly attached to the substrate 10.

[0047] The carrier layer 11 can be formed using organic materials. For example, it can be formed on the surface of the substrate 10 by spin coating. The thickness of the carrier layer 11 can be 3μm to 30μm. The carrier layer 11 formed using organic materials has a certain degree of flexibility. By making the carrier layer 11 smaller, the orthographic projection of the carrier layer 11 on the carrier surface of the substrate 10 is located within the orthographic projection of the cover layer 30 on the carrier surface of the substrate 10, thereby avoiding the carrier layer 11 from affecting the dicing.

[0048] like Figure 1 As shown, the cover layer 30 includes a first cover layer 31 and a second cover layer 32. The first cover layer 31 covers the outside of the plurality of light-emitting structures 20, and the second cover layer 32 is located on the side of the first cover layer 31 and on the surface of the first cover layer 31 away from the substrate 10.

[0049] By setting the cover layer 30 as two layers, it is convenient to set up corresponding structures to connect multiple light-emitting structures 20 for power supply. Furthermore, the two layers, the first cover layer 31 and the second cover layer 32, can be made of different materials. The first cover layer 31 can be made of a material that can better cover the surface of the light-emitting structure 20 and prevent the formation of pores. The second cover layer 32 can be made of a more wear-resistant material to provide protection. Since the second cover layer 32 not only covers the surface of the first cover layer 31 away from the substrate 10, but also covers the sides of the first cover layer 31, it can also provide protection from the side, which helps to extend the service life of the light-emitting device.

[0050] For example, both the first capping layer 31 and the second capping layer 32 can be formed of organic materials. The thickness of the first capping layer 31 can be 0.5 μm to 10 μm, and the thickness of the second capping layer 32 can be 0.5 μm to 10 μm. The thicknesses of the first capping layer 31 and the second capping layer 32 can be the same or different.

[0051] like Figure 1 As shown, the light-emitting device also includes a conductive layer 50. The conductive layer 50 is located on the surface of the first cover layer 31 away from the substrate 10, and one electrode of each of the plurality of light-emitting structures 20 is electrically connected to the conductive layer 50 through a via.

[0052] The light-emitting structure 20 has two electrodes, such as a P-electrode and an N-electrode. In some examples, the P-electrodes of multiple light-emitting structures 20 can be connected to the conductive layer 50 through vias, thereby achieving a common P-electrode connection for multiple light-emitting structures 20; in other examples, the N-electrodes of multiple light-emitting structures 20 can be connected to the conductive layer 50 through vias, thereby achieving a common N-electrode connection for multiple light-emitting structures 20. This common polarity connection simplifies the structure of the light-emitting device.

[0053] The shape of the conductive layer 50 can be arbitrarily set, as long as it can connect to one pole of multiple light-emitting structures 20. Here, the shape of the conductive layer 50 refers to the shape of the orthographic projection of the conductive layer 50 onto the bearing surface of the substrate 10.

[0054] Optionally, a plurality of transition electrodes may be disposed on the surface of the first cover layer 31 away from the substrate 10, and the plurality of transition electrodes are respectively connected to the other electrode of the plurality of light-emitting structures 20 through vias. The provision of transition electrodes facilitates the leading out of the other electrode of the plurality of light-emitting structures 20 to the surface of the light-emitting device.

[0055] like Figure 1 As shown, the light-emitting device also includes a plurality of welding electrodes 60. The plurality of welding electrodes 60 are located on the surface of the second capping layer 32 away from the substrate 10.

[0056] The conductive layer 50 is electrically connected to one of the welding electrodes 60 through a via. One electrode of each of the multiple light-emitting structures 20 is electrically connected to the conductive layer 50 through a via, and the other electrode of each of the multiple light-emitting structures 20 is electrically connected to the other welding electrodes 60 among the multiple welding electrodes 60 through a via.

[0057] The welding electrodes 60 are located on the surface of the second cover layer 32 away from the substrate 10, and multiple welding electrodes 60 are used for welding the light-emitting devices. Since the conductive layer 50 is provided and a common polarity connection is adopted, the total number of welding electrodes 60 only needs to be one more than the total number of light-emitting structures 20 to control the light emission of multiple light-emitting structures 20.

[0058] When the welding electrode 60 is electrically connected to the light-emitting structure 20, it can be connected to the aforementioned transition electrode, making it easier for the welding electrode 60 to be electrically connected to the light-emitting structure 20.

[0059] like Figure 2 As shown, multiple welding electrodes 60 are located at the corners of the second cover layer 32 away from the surface of the substrate 10.

[0060] By placing the welding electrodes 60 at the corner of the surface of the second cover layer 32 away from the substrate 10, a larger spacing can be created between the welding electrodes 60, reducing the risk of short circuits between different welding electrodes 60. Furthermore, if the light-emitting device uses the surface of the second cover layer 32 away from the substrate 10 as the light-emitting surface, a larger light-emitting area can be created in the central region of the second cover layer 32, reducing the light obstruction by the welding electrodes 60.

[0061] As an example, in this embodiment of the disclosure, the surface of the second cover layer 32 away from the substrate 10 is rectangular, and the four welding electrodes 60 are distributed at the four corners of the rectangle.

[0062] The materials of the multiple welding electrodes 60 can be the same or different. For example, the material of the welding electrode 60 connected to the conductive layer 50 can be different from the material of the other welding electrodes 60.

[0063] Figure 3 This is a flowchart illustrating a method for fabricating a light-emitting device according to an embodiment of this disclosure. This method is used to fabricate... Figure 1 or Figure 2 The light-emitting device shown.

[0064] like Figure 3 As shown, the preparation method includes:

[0065] In step S11, a substrate 10 is provided.

[0066] In step S12, multiple sets of light-emitting structures 20 are formed on the bearing surface of the substrate 10, each set including at least one light-emitting structure 20.

[0067] In step S13, a plurality of cover layers 30 are formed on the bearing surface of the substrate 10.

[0068] Multiple covering layers 30 are distributed at intervals, and the multiple covering layers 30 cover the outside of multiple sets of light-emitting structures 20 respectively.

[0069] In step S14, dicing is performed along the gaps between the multiple cover layers 30 to form multiple light-emitting devices.

[0070] By setting a light-emitting structure 20 and a cover layer 30 on the carrier surface of the substrate 10, the cover layer 30 covers the light-emitting structure 20. Since there is a gap between the orthographic projection of the cover layer 30 on the carrier surface of the substrate 10 and the edge of the carrier surface, that is, the cover layer 30 does not completely cover the substrate 10, and the edge of the substrate 10 is exposed outside the cover layer, the dicing can be performed on the area of ​​the substrate 10 not covered by the cover layer 30, thereby avoiding the difficulty of separating the light-emitting diode chips during dicing, which is beneficial to improving the yield.

[0071] Figure 4 This is a flowchart illustrating a method for fabricating a light-emitting device according to an embodiment of this disclosure. This method is used to fabricate... Figure 1 or Figure 2 The light-emitting device shown.

[0072] like Figure 4 As shown, the preparation method includes:

[0073] In step S21, a substrate 10 is provided.

[0074] For example, the substrate 10 may be a transparent substrate, such as a sapphire substrate.

[0075] In step S22, a plurality of carrier layers 11 are formed on the carrier surface of the substrate 10, and the plurality of carrier layers 11 are distributed at intervals between each other.

[0076] In some examples, step S22 may include the following steps:

[0077] An organic material film is formed on the bearing surface of the substrate 10.

[0078] Multiple support layers 11 are formed by processing the organic material film through a patterning process.

[0079] An organic material film is formed on the carrier surface of the substrate 10, and then the organic material film is patterned, for example by photolithography or etching, to form multiple independent carrier layers 11.

[0080] For example, the organic material film can be formed on the bearing surface of the substrate 10 by spin coating. The thickness of the organic material film can be 3 μm to 30 μm.

[0081] In step S23, multiple sets of light-emitting structures 20 are formed on the surfaces of multiple carrier layers 11 away from the substrate 10, and a set of light-emitting structures 20 is formed on each carrier layer 11.

[0082] The light-emitting structure 20 can be fabricated by epitaxial growth. After fabrication, it is then transferred onto the substrate 10.

[0083] In other examples, the light-emitting structure 20 can also be grown directly on the substrate 10.

[0084] For example, each group may include multiple light-emitting structures 20. The multiple light-emitting structures 20 may include light-emitting structures 20 with different emission colors. For example, it may include three light-emitting structures 20 arranged in a straight line. These three light-emitting structures 20 are a red light-emitting structure emitting red light, a red light-emitting structure emitting green light, and a red light-emitting structure emitting blue light, respectively.

[0085] In step S24, a first covering layer 31 is formed.

[0086] like Figure 1 As shown, each first capping layer 31 comprises a set of light-emitting structures 20. The first capping layer 31 can be formed using organic materials. For example, the first capping layer 31 can be formed by spin coating. The thickness of the first capping layer 31 is greater than the thickness of the light-emitting structure 20, so that the light-emitting structure 20 is completely covered.

[0087] For example, the thickness of the first cover layer 31 can be 0.5 μm to 10 μm.

[0088] The formation of the first capping layer 31 is similar to that of the carrier layer 11. It can also be formed by forming an organic material film and then patterning it, for example by photolithography or etching, thereby forming multiple independent first capping layers 31.

[0089] In step S25, a conductive layer 50 is formed on the surface of the first cover layer 31 away from the substrate 10.

[0090] like Figure 1 As shown, the conductive layer 50 can be electrically connected to multiple light-emitting structures 20 through vias. Each light-emitting structure 20 has two electrodes, such as a P-electrode and an N-electrode. The conductive layer 50 can be connected to either the P-electrode or the N-electrode of the light-emitting structure 20 through vias, thereby achieving a common polarity connection. This common polarity connection simplifies the structure of the light-emitting device.

[0091] For example, the conductive layer 50 can be formed by a vapor deposition process and a patterning process.

[0092] In step S26, a second cover layer 32 is formed on the side of the first cover layer 31 and on the surface away from the substrate 10.

[0093] The second capping layer 32 can be formed using an organic material. For example, the second capping layer 32 can be formed by spin coating. The thickness of the second capping layer 32 is greater than the thickness of the conductive layer 50, so that the conductive layer 50 is completely covered.

[0094] For example, the thickness of the second cover layer 32 can be 0.5 μm to 10 μm.

[0095] The second capping layer 32 can be formed in the same way as the first capping layer 31, that is, by forming an organic material film and then patterning it, for example by photolithography, etching and other methods, to form multiple independent second capping layers 30.

[0096] In step S27, a welding electrode 60 is formed on the surface of the second cover layer 32 away from the substrate 10.

[0097] For example, the welding electrode 60 is disposed at a corner of the surface of the second cover layer 32 away from the substrate 10.

[0098] One of the multiple welding electrodes 60 is electrically connected to the conductive layer 50 through a via. One electrode of each of the multiple light-emitting structures 20 is electrically connected to the conductive layer 50 through a via, and the other electrode of each of the multiple light-emitting structures 20 is electrically connected to the other welding electrodes 60 of the multiple welding electrodes 60 through a via.

[0099] In step S28, dicing is performed along the gaps between the multiple cover layers 30 to form multiple light-emitting devices.

[0100] Figure 5 This is a schematic diagram illustrating the fabrication process of the light-emitting device provided in the embodiments of this disclosure. Figure 5 The diagram shows the structure before dicing. Dicing along the gaps between the multiple cover layers 30 allows for the formation of... Figure 2 The multiple light-emitting devices shown.

[0101] The substrate 10 can be thinned before dicing to further facilitate dicing.

[0102] After thinning the substrate 10, dicing is performed along the gaps between the multiple capping layers 30. Since the substrate 10 is exposed at the gaps between the capping layers 30 and is not covered by organic material layers such as the capping layer 30 and the carrier layer 11, the situation of the light-emitting diode chip being difficult to separate during dicing can be avoided, which is beneficial to improving the yield.

[0103] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” “third,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an” or “a” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “comprising” or “including” and similar terms mean that the element or object preceding “comprising” or “including” encompasses the element or object listed following “comprising” or “including” and its equivalents, and do not exclude other elements or objects. The terms “connected” or “linked” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” “right,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described object changes.

[0104] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A light-emitting device, characterized in that, It includes a substrate (10), a light-emitting structure (20) and a cover layer (30), wherein the light-emitting structure (20) is located on the support surface of the substrate (10), the cover layer (30) covers the light-emitting structure (20), and the cover layer (30) has a gap (A) between the orthographic projection of the support surface and the edge of the support surface. The light-emitting surface of the light-emitting device is located on the side of the substrate (10) away from the light-emitting structure (20), and the light-emitting structure (20) includes a red light-emitting structure, a green light-emitting structure and a blue light-emitting structure.

2. The light-emitting device according to claim 1, characterized in that, The cover layer (30) includes a first cover layer (31) and a second cover layer (32), the first cover layer (31) covering the outside of the light-emitting structure (20), and the second cover layer (32) located on the side of the first cover layer (31) and on the surface away from the substrate (10).

3. The light-emitting device according to claim 2, characterized in that, It also includes a conductive layer (50) located on the surface of the first cover layer (31) away from the substrate (10), and the light-emitting device includes a plurality of light-emitting structures (20), and one pole of each of the plurality of light-emitting structures (20) is electrically connected to the conductive layer (50) through a via.

4. The light-emitting device according to claim 3, characterized in that, It also includes a plurality of welding electrodes (60) located on the surface of the second cover layer (32) away from the substrate (10); The conductive layer (50) is electrically connected to one of the plurality of welding electrodes (60) through a via, and the other electrode of each of the plurality of light-emitting structures (20) is electrically connected to the other welding electrodes (60) of the plurality of welding electrodes (60) through a via.

5. The light-emitting device according to any one of claims 4, characterized in that, The plurality of welding electrodes (60) are located at the corners of the surface of the second cover layer (32) away from the substrate (10).

6. The light-emitting device according to any one of claims 1 to 5, characterized in that, It also includes a carrier layer (11) located on the carrier surface, and the orthographic projection of the carrier layer (11) on the carrier surface is located within the orthographic projection of the cover layer (30) on the carrier surface, and the light-emitting structure (20) is located on the surface of the carrier layer (11) away from the substrate (10).

7. The light-emitting device according to any one of claims 1 to 5, characterized in that, The gap (A) between the orthographic projection of the cover layer (30) on the bearing surface and the edge of the bearing surface is 5 μm to 50 μm.

8. A method for fabricating a light-emitting device, characterized in that, The preparation method includes: Provide a substrate (10); Multiple sets of light-emitting structures (20) are formed on the bearing surface of the substrate (10), each set including at least one light-emitting structure (20), the light-emitting structure (20) including a red light-emitting structure, a green light-emitting structure and a blue light-emitting structure; Multiple covering layers (30) are formed on the bearing surface, the multiple covering layers (30) are distributed at intervals, and the multiple covering layers (30) respectively cover the outside of the multiple sets of light-emitting structures (20); Dicing is performed along the gaps between the plurality of cover layers (30) to form a plurality of light-emitting devices; the light-emitting surface of the light-emitting device is located on the side of the substrate (10) away from the light-emitting structure (20).

9. The preparation method according to claim 8, characterized in that, The formation of multiple light-emitting structures (20) on the bearing surface of the substrate (10) includes: Multiple carrier layers (11) are formed on the carrier surface of the substrate (10), and the multiple carrier layers (11) are distributed at intervals between each other; The plurality of light-emitting structures (20) are formed on the surfaces of the plurality of carrier layers (11) away from the substrate (10), and a set of light-emitting structures (20) is formed on each of the carrier layers (11).

10. The preparation method according to claim 9, characterized in that, The formation of multiple carrier layers (11) on the carrier surface of the substrate (10) includes: An organic material film is formed on the bearing surface of the substrate (10); The organic material film is processed by a patterning process to form the plurality of support layers (11).

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