Method, device and photolithography layout design system for determining process hotspots

Abstract

The application provides a method and device for determining a process hotspot and a photolithography layout design system. The method comprises: a first drawing step of drawing a via pattern of all layers except a base layer on the base layer to obtain a via pattern layout; a second drawing step of drawing a plurality of scanning circles on the via pattern layout with the center of the via pattern of each base layer as the center and a predetermined distance as the radius; a first determining step of determining the via pattern in the via pattern layout with an overlapping area with each scanning circle as an abnormal via pattern; a second determining step of determining the abnormal via pattern corresponding to the scanning circle and the via pattern of the base layer corresponding to the scanning circle as an abnormal via pattern group, and completing the scanning of the base layer; and a repeating step of repeating the first drawing step, the second drawing step, the first determining step and the second determining step at least once in sequence until the scanning of all layers is completed, thereby solving the problem of low detection efficiency of the process hotspot in the prior art.

Description

Technical Field

[0001] This application relates to the field of integrated circuit design technology, and more specifically, to a method, apparatus, computer-readable storage medium, and photolithography layout design system for determining process hotspots. Background Technology

[0002] Yield is a crucial evaluation metric in integrated circuit design and manufacturing, directly impacting chip reliability and price. From a DTCO (Design Technology Cooptimization) perspective, yield optimization is a continuous process from design to manufacturing, involving multiple stages and steps in a collaborative and iterative manner. From a layout perspective, identifying defective pixel patterns that affect yield, establishing a comprehensive defective pixel pattern library, and using this library to achieve high-precision and efficient defect identification for other chip designs based on the same process is a vital way to avoid yield losses. Therefore, photolithography hotspot detection technology has gradually become a popular research area in design for manufacturability. Researchers hope to use this technology to solve process hotspot problems in the early stages of layout design, avoiding the discovery of process hotspots in later manufacturing stages. Repeatedly publishing photomasks, searching for problems, and repeating wafer fabrication in later stages not only consumes significant manpower and resources but also affects the time-to-market of the designed product. Especially today, with increasingly complex integrated circuit layouts, the efficiency and accuracy of photolithography hotspot detection technology have become particularly important.

[0003] Currently, there are three methods for detecting hot spots in lithography processes: (1) hot spot detection based on lithography process simulation; (2) detection based on matching known hot spot patterns; and (3) hot spot detection based on machine learning. These three methods each have their advantages in terms of accuracy, completeness, and inspection efficiency. Since lithography simulation is a precise simulation of the outline of the developed pattern after lithography exposure, hot spot detection based on lithography simulation results can be considered the standard answer for hot spot detection in lithography processes. Therefore, overall, hot spot detection based on lithography simulation is more outstanding in terms of accuracy and completeness, which is why it is currently the mainstream method used in the industry.

[0004] The hotspot detection mode based on photolithography process simulation includes the following steps: 1. Perform precise optical proximity correction on all patterns to generate a simulated pattern of the entire chip; 2. Locate photolithography process hotspots throughout the entire chip. This type of detection mode has low detection efficiency and is time-consuming.

[0005] The detection mode based on known hotspot graphics matching includes the following steps: 1. Establish a hotspot graphics library by classifying known process hotspot graphics according to risk level; 2. Preprocess the input layout; 3. Segment the preprocessed layout according to template size and segmentation rules; 4. Search and match the segmented layout using the hotspot graphics library; 5. Obtain the matching results. Since hotspot detection is based on a hotspot library, it can only predict hotspot layouts within the library and cannot predict hotspot layouts outside the library or unknown layouts.

[0006] The hotspot detection algorithm based on machine learning generally follows these steps: 1. Extract feature vectors from the layout to be trained; 2. Train the hotspots using machine learning methods to build a recognizer model; 3. Extract slices from the input layout; 4. Extract features from the slices; 5. Use the recognizer to identify the slice features and provide the detection result. This type of detection method has significant limitations because the training set cannot cover all layout structures, leading to issues such as omissions or misjudgments.

[0007] The information disclosed above in the background section is only intended to enhance the understanding of the background art of the art described herein. Therefore, the background art may contain certain information that does not constitute prior art known to those skilled in the art in this country. Summary of the Invention

[0008] The main objective of this application is to provide a method, apparatus, computer-readable storage medium, and photolithography layout design system for determining process hotspots, so as to solve the problem of low detection efficiency of process hotspots in the prior art.

[0009] According to one aspect of the present invention, a method for determining process hotspots is provided. A photolithography pattern includes multiple layers, each layer including multiple via patterns. The method includes: a first drawing step, drawing the via patterns of all layers except a base layer onto the base layer to obtain a via pattern layout, such that the relative positions of the via patterns remain unchanged, wherein the base layer is any one of the layers; a second drawing step, drawing multiple scanning circles on the via pattern layout with the center of each via pattern in the base layer as the center and a predetermined distance as the radius, wherein the scanning circles correspond one-to-one with the via patterns in the base layer. The through-hole pattern in the layer layer is the through-hole pattern in the base layer; the first determination step is to determine the through-hole pattern in the through-hole pattern layout that has an overlapping area with each of the scanning circles as an abnormal through-hole pattern; the second determination step is to determine the abnormal through-hole pattern corresponding to the scanning circle and the through-hole pattern in the base layer corresponding to the scanning circle as an abnormal through-hole pattern group, and complete the scanning of the base layer, wherein the abnormal through-hole pattern group is a combination of through-hole patterns that may be process hotspots; the steps are repeated, and the first drawing step, the second drawing step, the first determination step and the second determination step are repeated at least once in sequence until all the layer scanning is completed.

[0010] Optionally, the abnormal via pattern group includes two via patterns. Determining the abnormal via pattern corresponding to the scanning circle and the via pattern of the base layer corresponding to the scanning circle as the abnormal via pattern group includes: when there is only one abnormal via pattern corresponding to the scanning circle, determining the abnormal via pattern corresponding to the scanning circle and the via pattern of the base layer corresponding to the scanning circle as the abnormal via pattern group; when there are multiple abnormal via patterns corresponding to the scanning circle, determining the target abnormal via pattern corresponding to the scanning circle and the via pattern of the base layer corresponding to the scanning circle as the abnormal via pattern group, wherein the target abnormal via pattern is the abnormal via pattern with the smallest distance from the center of the corresponding scanning circle.

[0011] Optionally, before determining the target abnormal via pattern corresponding to the scanning circle and the via pattern of the base layer corresponding to the scanning circle as the abnormal via pattern group, the method further includes: drawing the circumscribed rectangle of each abnormal via pattern corresponding to the scanning circle to obtain a plurality of first circumscribed rectangles; calculating the distance between the center of each first circumscribed rectangle and the center of the corresponding scanning circle to obtain a plurality of via pattern distances; and determining the abnormal via pattern with the smallest via pattern distance as the target abnormal via pattern.

[0012] Optionally, after the second determining step and before the repeating step, the method further includes: hiding the base layer.

[0013] Optionally, before the second drawing step, the method further includes: drawing the outer rectangle of each of the through-hole patterns in the base layer to obtain a plurality of second outer rectangles, wherein the second outer rectangles correspond one-to-one with the through-hole patterns in the base layer; and determining the center of the second outer rectangle as the center of the corresponding through-hole pattern in the base layer.

[0014] Optionally, after the repeated steps, the method further includes: adjusting the photolithography pattern to eliminate all of the abnormal via pattern groups.

[0015] Optionally, the distance between any two through-hole patterns in the same layer is greater than the predetermined distance.

[0016] According to another aspect of the present invention, a device for determining process hotspots is also provided. The photolithography pattern includes multiple layers, each layer including multiple via patterns. The device includes: a first drawing unit, configured to perform a first drawing step, drawing the via patterns of all layers except a base layer onto the base layer to obtain a via pattern layout, such that the relative positions between the via patterns remain unchanged, wherein the base layer is any one of the layers; and a second drawing unit, configured to perform a second drawing step, drawing multiple scanning circles on the via pattern layout with the center of each via pattern in the base layer as the center and a predetermined distance as the radius, wherein the scanning circles correspond one-to-one with the via patterns in the base layer. The hole pattern is the through-hole pattern in the base layer; the first determining unit is used to perform a first determining step, determining the through-hole pattern in the through-hole pattern layout that has an overlapping area with each of the scanning circles as an abnormal through-hole pattern; the second determining unit is used to perform a second determining step, determining the abnormal through-hole pattern corresponding to the scanning circle and the through-hole pattern in the base layer corresponding to the scanning circle as an abnormal through-hole pattern group, completing the scanning of the base layer, the abnormal through-hole pattern group being a combination of through-hole patterns that may be process hotspots; the repeating unit is used to perform a repeating step, repeating the first drawing step, the second drawing step, the first determining step and the second determining step at least once in sequence, until all the layer scanning is completed.

[0017] According to another aspect of the present invention, a computer-readable storage medium is also provided, the computer-readable storage medium including a stored program, wherein when the program is executed by a processor, the processor performs any one of the methods described.

[0018] According to another aspect of the present invention, a photolithography layout design system is also provided, comprising: one or more processors, a memory, a display device, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs include methods for performing any one of the methods described.

[0019] In this embodiment of the invention, the method for determining the process hotspots firstly involves a first drawing step, in which the through-hole patterns of all layers other than the base layer are drawn onto the base layer to obtain a through-hole pattern layout, ensuring that the relative positions of the through-hole patterns remain unchanged. The base layer can be any one of the aforementioned layers. Then, a second drawing step is performed, in which multiple scanning circles are drawn on the through-hole pattern layout with the center of each through-hole pattern in the base layer as the center and a predetermined distance as the radius. Each scanning circle corresponds one-to-one with a through-hole pattern in the base layer, and the through-hole pattern in the base layer is the through-hole pattern in the base layer. Next, the first determination step is performed to identify the through-hole patterns in the above-mentioned through-hole pattern layout that overlap with each of the above-mentioned scanning circles as abnormal through-hole patterns. Then, the second determination step is performed to identify the abnormal through-hole patterns corresponding to the above-mentioned scanning circles and the through-hole patterns in the base layer corresponding to the above-mentioned scanning circles as abnormal through-hole pattern groups, and the scanning of the above-mentioned base layer is completed. The abnormal through-hole pattern groups are combinations of the above-mentioned through-hole patterns that may be process hotspots. Finally, the repeating step is performed, and the above-mentioned first drawing step, the above-mentioned second drawing step, the above-mentioned first determination step and the above-mentioned second determination step are repeated at least once in sequence until all the above-mentioned layers are scanned. This method uses one layer as a base layer and draws the via patterns of other layers onto the base layer. A scanning circle is drawn with the center of the via in the base layer as the center and a predetermined distance as the radius. Vias in the via pattern that overlap with each scanning circle are identified as abnormal vias, thus confirming that all scanned vias are abnormal. The vias in the base layer and the scanned abnormal vias form an abnormal via group, which represents a combination of vias that may be process hotspots. Scanning all layers sequentially as base layers yields all abnormal via groups, completing the detection of process hotspots. This eliminates the need to calculate the distance between all vias to determine if a hotspot is a process hotspot, significantly improving detection efficiency and solving the problem of low detection efficiency in existing technologies. Furthermore, since small distances between vias can lead to short circuits and process hotspots, this method also uses the distance between vias to detect process hotspots, ensuring accuracy while improving efficiency. Attached Figure Description

[0020] The accompanying drawings, which form part of this application, are used to provide a further understanding of this application. The illustrative embodiments and descriptions of this application are used to explain this application and do not constitute an undue limitation of this application. In the drawings:

[0021] Figure 1 A flowchart illustrating a method for determining process hotspots according to an embodiment of this application is shown;

[0022] Figure 2 A schematic diagram of a process hotspot determination apparatus according to an embodiment of this application is shown;

[0023] Figure 3 A schematic diagram of a photolithographic pattern according to an embodiment of this application is shown;

[0024] Figure 4 A flowchart illustrating a method for determining process hotspots according to another embodiment of this application is shown;

[0025] Figure 5 A schematic diagram showing the scanning circle overlapping with the via patterns of layers B and D according to an embodiment of this application is illustrated.

[0026] Figure 6 A schematic diagram showing the scanning circles overlapping with the via pattern of layer C according to an embodiment of this application is shown;

[0027] Figure 7 A schematic diagram of an abnormal via pattern group according to an embodiment of this application is shown;

[0028] Figure 8 A schematic diagram of a viapair queue according to one embodiment of this application is shown. Detailed Implementation

[0029] It should be noted that the following detailed descriptions are illustrative and intended to provide further explanation of this application. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains.

[0030] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0031] It should be understood that when an element (such as a layer, film, region, or substrate) is described as being "on" another element, the element may be directly on the other element, or there may be an intermediate element present. Furthermore, in the specification and claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element, or "connected" to the other element via a third element.

[0032] As mentioned in the background section, the detection efficiency of process hotspots in the prior art is low. In order to solve the above problems, in a typical embodiment of this application, a method, apparatus, computer-readable storage medium, and photolithography layout design system for determining process hotspots are provided.

[0033] According to an embodiment of this application, a method for determining process hotspots is provided, wherein the photolithography pattern includes multiple layers, and each of the above layers includes multiple via patterns.

[0034] Figure 1 This is a flowchart of a method for determining process hotspots according to an embodiment of this application. For example... Figure 1 As shown, the method includes the following steps:

[0035] Step S101, the first drawing step, draws the through hole patterns of all the above layers other than the base layer on the base layer to obtain the through hole pattern layout, so that the relative positions between the through hole patterns remain unchanged, and the base layer is any one of the above layers.

[0036] It should be noted that since the distance between vias is less than the predetermined distance, process hotspots may occur, which can easily lead to short circuits. During the photolithography layout design process, if the distance between any two via patterns on the same layer is greater than the predetermined distance, the manufactured integrated circuit will not have process hotspots. However, the distance between vias manufactured by via patterns on different layers may be less than the predetermined distance, which may result in process hotspots. Therefore, by drawing via patterns from different layers on the same layer, the distance between manufactured vias can be determined by detecting the distance between the via patterns.

[0037] Step S102, the second drawing step, taking the center of the through hole pattern of each of the above-mentioned base layer as the center and the predetermined distance as the radius, draw multiple scanning circles on the through hole pattern layout. The scanning circles correspond one-to-one with the through hole patterns of the base layer. The through hole patterns of the base layer are the through hole patterns in the base layer.

[0038] To facilitate determining the center of the irregular pattern, in an optional implementation, before the second drawing step described above, the method further includes:

[0039] Step S201: Draw the outer rectangle of each of the above-mentioned base layer through hole patterns to obtain multiple second outer rectangles, and the second outer rectangles correspond one-to-one with the above-mentioned base layer through hole patterns;

[0040] Step S202: The center of the second circumscribed rectangle is determined as the center of the corresponding through-hole pattern in the base layer.

[0041] In the above embodiments, the through-hole pattern is usually not a regular circle. By drawing the outer rectangle of the through-hole pattern of the base layer, a second outer rectangle is obtained, and the center of the second outer rectangle can be determined as the center of the through-hole pattern of the base layer, which makes it easier to determine the center of the irregular pattern.

[0042] Step S103, first determination step, the through hole pattern in the above through hole pattern layout that has an overlapping area with each of the above scanning circles is determined as an abnormal through hole pattern.

[0043] It should be noted that the distance between the through holes manufactured by the through hole pattern may be less than the predetermined distance mentioned above, which may result in process hot spots and short circuits. Since the radius of the scanning circle is the predetermined distance, the through hole pattern with the overlapping area of ​​the scanning circle is determined to be an abnormal through hole pattern. The distance between the abnormal through hole pattern and the through hole pattern of the base layer is less than the predetermined distance, which may result in process hot spots and short circuits.

[0044] Step S104, the second determination step, determines the abnormal through hole pattern corresponding to the above scanning circle and the through hole pattern of the base layer corresponding to the above scanning circle as an abnormal through hole pattern group, and completes the scanning of the base layer. The abnormal through hole pattern group is a combination of the through hole patterns that may be process hotspots.

[0045] To reduce workload, in an optional embodiment, the above-mentioned abnormal through-hole pattern group includes two of the above-mentioned through-hole patterns, and the above-mentioned step S104 includes:

[0046] Step S1041: When there is only one abnormal through-hole pattern corresponding to the above-mentioned scanning circle, the abnormal through-hole pattern corresponding to the above-mentioned scanning circle and the through-hole pattern of the base layer corresponding to the above-mentioned scanning circle are determined as the abnormal through-hole pattern group.

[0047] In step S1042, when there are multiple abnormal via patterns corresponding to the scanning circle, the target abnormal via pattern corresponding to the scanning circle and the via pattern of the base layer corresponding to the scanning circle are determined as the abnormal via pattern group, and the target abnormal via pattern is the abnormal via pattern with the smallest distance from the center of the corresponding scanning circle.

[0048] In the above embodiments, if there is only one abnormal via pattern corresponding to the scanning circle, the abnormal via pattern corresponding to the scanning circle and the via pattern of the base layer corresponding to the scanning circle are directly identified as the abnormal via pattern group viapair and stored in the viapairs queue. If there are multiple abnormal via patterns corresponding to the scanning circle, the abnormal via pattern with the smallest distance from the center of the corresponding scanning circle is selected as the target abnormal via pattern. The target abnormal via pattern and the via pattern of the base layer corresponding to the scanning circle are identified as the abnormal via pattern group viapair and stored in the viapairs queue. This reduces the number of abnormal via pattern groups viapair. Subsequently, the photolithography pattern needs to be adjusted to eliminate the abnormal via pattern groups viapair, thus reducing the workload.

[0049] To simplify the distance calculation steps, in an optional implementation, before step S1042, the method further includes:

[0050] Step S1043: Draw the outer rectangle of each of the above-mentioned abnormal through-hole patterns corresponding to the above-mentioned scanning circle to obtain a plurality of first outer rectangles;

[0051] Step S1044: Calculate the distance between the center of each of the first circumscribed rectangles and the center of the corresponding scanning circle to obtain the distance between multiple through-hole patterns;

[0052] Step S1045: The abnormal through-hole pattern with the smallest distance between the above through-hole patterns is determined as the target abnormal through-hole pattern.

[0053] In the above embodiments, by drawing the circumscribed rectangle of the abnormal via pattern to obtain the first circumscribed rectangle, the distance between the center of the first circumscribed rectangle and the center of the corresponding scanning circle can be calculated to obtain the via pattern distance, that is, the distance between the abnormal via pattern and the corresponding via pattern of the base layer. Multiple distances are compared, and the abnormal via pattern with the smallest distance to the center of the corresponding scanning circle is selected, that is, the target abnormal via pattern. The method of determining the center is simple and convenient for distance calculation.

[0054] Step S105: Repeat the steps, repeating the first drawing step, the second drawing step, the first determining step, and the second determining step at least once in sequence, until all the above-mentioned layer scans are completed.

[0055] To further improve the detection efficiency of process hotspots, in an optional embodiment, after the second determining step and before the repeating step, the method further includes:

[0056] Step S301: Hide the aforementioned base layer.

[0057] In the above embodiments, after the base layer is scanned, it is hidden, and the remaining layers are scanned in sequence. This reduces the workload of drawing the via patterns of all layers other than the base layer on the base layer, thus improving efficiency. For example, the photolithography pattern includes layers A, B, C, and D. After layer A is scanned as the base layer, it is hidden. Then, layers B, C, and D are scanned. After layer B is scanned as the base layer, it is also hidden. Then, layers C and D are scanned. After layer C is scanned as the base layer, it is also hidden. Since only layer D remains, the scanning and detection of all process hotspots are completed.

[0058] To improve the yield of the base circuit, in one optional implementation, after the above-described repeated steps, the method further includes:

[0059] Step S401: Adjust the above photolithography pattern to eliminate all the above abnormal via pattern groups.

[0060] In the above embodiments, by adjusting the photolithography pattern and increasing the distance between the abnormal via pattern in the abnormal via pattern group and the corresponding via pattern in the base layer, all the abnormal via pattern groups can be eliminated, thus avoiding short circuits caused by process hotspots after manufacturing.

[0061] In the above-mentioned method for determining process hotspots, firstly, a first drawing step is performed, in which the through-hole patterns of all layers other than the base layer are drawn on the base layer to obtain a through-hole pattern layout, ensuring that the relative positions of the through-hole patterns remain unchanged, and the base layer is any one of the aforementioned layers; then, a second drawing step is performed, in which multiple scanning circles are drawn on the through-hole pattern layout with the center of each through-hole pattern in the base layer as the center and a predetermined distance as the radius, the scanning circles corresponding one-to-one with the through-hole patterns in the base layer, and the through-hole patterns in the base layer are the through-hole patterns in the base layer; then, the process is further performed... The first determination step involves identifying the through-hole patterns in the above-mentioned through-hole pattern layout that overlap with each of the above-mentioned scanning circles as abnormal through-hole patterns. Then, the second determination step involves identifying the abnormal through-hole patterns corresponding to the above-mentioned scanning circles and the through-hole patterns in the base layer corresponding to the above-mentioned scanning circles as abnormal through-hole pattern groups, thus completing the scanning of the base layer. The abnormal through-hole pattern groups are combinations of the through-hole patterns that may be process hotspots. Finally, the repetition step involves repeating the above-mentioned first drawing step, the above-mentioned second drawing step, the above-mentioned first determination step, and the above-mentioned second determination step at least once in sequence until all the above-mentioned layers are scanned. This method uses one layer as a base layer and draws the via patterns of other layers onto the base layer. A scanning circle is drawn with the center of the via in the base layer as the center and a predetermined distance as the radius. Vias in the via pattern that overlap with each scanning circle are identified as abnormal vias, thus confirming that all scanned vias are abnormal. The vias in the base layer and the scanned abnormal vias form an abnormal via group, which represents a combination of vias that may be process hotspots. Scanning all layers sequentially as base layers yields all abnormal via groups, completing the detection of process hotspots. This eliminates the need to calculate the distance between all vias to determine if a hotspot is a process hotspot, significantly improving detection efficiency and solving the problem of low detection efficiency in existing technologies. Furthermore, since small distances between vias can lead to short circuits and process hotspots, this method also uses the distance between vias to detect process hotspots, ensuring accuracy while improving efficiency.

[0062] It should be noted that the steps shown in the flowchart in the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and although a logical order is shown in the flowchart, in some cases the steps shown or described may be executed in a different order than that shown here.

[0063] This application also provides a device for determining process hotspots. It should be noted that this device can be used to execute the method for determining process hotspots provided in this application. The following describes the device for determining process hotspots provided in this application. The photolithography pattern includes multiple layers, and each layer includes multiple via patterns.

[0064] Figure 2 This is a schematic diagram of a process hotspot determination apparatus according to an embodiment of this application. Figure 2 As shown, the device includes:

[0065] The first drawing unit 10 is used to perform the first drawing step, drawing the through hole patterns of all the above-mentioned layers other than the base layer onto the base layer to obtain the through hole pattern layout, so that the relative positions between the above-mentioned through hole patterns remain unchanged, and the base layer is any one of the above-mentioned layers.

[0066] It should be noted that since the distance between vias is less than the predetermined distance, process hotspots may occur, which can easily lead to short circuits. During the photolithography layout design process, if the distance between any two via patterns on the same layer is greater than the predetermined distance, the manufactured integrated circuit will not have process hotspots. However, the distance between vias manufactured by via patterns on different layers may be less than the predetermined distance, which may result in process hotspots. Therefore, by drawing via patterns from different layers on the same layer, the distance between manufactured vias can be determined by detecting the distance between the via patterns.

[0067] The second drawing unit 20 is used to perform the second drawing step, drawing multiple scanning circles on the through hole pattern map with the center of each of the above-mentioned base layer through hole patterns as the center and a predetermined distance as the radius. The scanning circles correspond one-to-one with the through hole patterns of the above-mentioned base layer. The through hole patterns of the above-mentioned base layer are the through hole patterns in the above-mentioned base layer.

[0068] To facilitate determining the center of the irregular pattern, in one optional embodiment, the above-mentioned device further includes:

[0069] The first drawing module is used to draw the outer rectangle of each of the above-mentioned base layer through hole patterns before drawing multiple scanning circles on the above-mentioned through hole pattern layout with the center of each of the above-mentioned base layer through hole patterns as the center and a predetermined distance as the radius, to obtain multiple second outer rectangles, and the above-mentioned second outer rectangles correspond one-to-one with the above-mentioned base layer through hole patterns.

[0070] The first determining module is used to determine the center of the second circumscribed rectangle as the center of the corresponding through-hole pattern in the base layer.

[0071] In the above embodiments, the through-hole pattern is usually not a regular circle. By drawing the outer rectangle of the through-hole pattern of the base layer, a second outer rectangle is obtained, and the center of the second outer rectangle can be determined as the center of the through-hole pattern of the base layer, which makes it easier to determine the center of the irregular pattern.

[0072] The first determining unit 30 is used to perform the first determining step, which determines the through hole pattern in the through hole pattern layout that has an overlapping area with each of the above-mentioned scanning circles as an abnormal through hole pattern.

[0073] It should be noted that the distance between the through holes manufactured by the through hole pattern may be less than the predetermined distance mentioned above, which may result in process hot spots and short circuits. Since the radius of the scanning circle is the predetermined distance, the through hole pattern with the overlapping area of ​​the scanning circle is determined to be an abnormal through hole pattern. The distance between the abnormal through hole pattern and the through hole pattern of the base layer is less than the predetermined distance, which may result in process hot spots and short circuits.

[0074] The second determining unit 40 is used to perform the second determining step, to determine the abnormal through hole pattern corresponding to the scanning circle and the through hole pattern of the base layer corresponding to the scanning circle as an abnormal through hole pattern group, and to complete the scanning of the base layer. The abnormal through hole pattern group is a combination of the through hole patterns that may be process hotspots.

[0075] To reduce workload, in one optional embodiment, the abnormal via pattern group includes two via patterns, and the second determining unit includes:

[0076] The second determining module is used to determine the abnormal through-hole pattern corresponding to the scanning circle and the through-hole pattern of the base layer corresponding to the scanning circle as the abnormal through-hole pattern group when there is only one abnormal through-hole pattern corresponding to the scanning circle.

[0077] The third determining module is used to determine the target abnormal through-hole pattern corresponding to the scanning circle and the through-hole pattern of the base layer corresponding to the scanning circle as the abnormal through-hole pattern group when there are multiple abnormal through-hole patterns corresponding to the scanning circle. The target abnormal through-hole pattern is the abnormal through-hole pattern with the smallest distance from the center of the corresponding scanning circle.

[0078] In the above embodiments, if there is only one abnormal via pattern corresponding to the scanning circle, the abnormal via pattern corresponding to the scanning circle and the via pattern of the base layer corresponding to the scanning circle are directly identified as the abnormal via pattern group viapair and stored in the viapairs queue. If there are multiple abnormal via patterns corresponding to the scanning circle, the abnormal via pattern with the smallest distance from the center of the corresponding scanning circle is selected as the target abnormal via pattern. The target abnormal via pattern and the via pattern of the base layer corresponding to the scanning circle are identified as the abnormal via pattern group viapair and stored in the viapairs queue. This reduces the number of abnormal via pattern groups viapair. Subsequently, the photolithography pattern needs to be adjusted to eliminate the abnormal via pattern groups viapair, thus reducing the workload.

[0079] To simplify the distance calculation process, in an optional embodiment, the above-mentioned apparatus further includes:

[0080] The second drawing module is used to draw the outer rectangle of each abnormal through hole pattern corresponding to the scanning circle before determining the target abnormal through hole pattern and the through hole pattern of the base layer corresponding to the scanning circle as the abnormal through hole pattern group, so as to obtain a plurality of first outer rectangles.

[0081] The calculation module is used to calculate the distance between the center of each of the first circumscribed rectangles and the center of the corresponding scanning circle to obtain the distance between multiple through-hole patterns;

[0082] The fourth determining module is used to determine the abnormal through-hole pattern with the smallest distance from the above-mentioned through-hole patterns as the above-mentioned target abnormal through-hole pattern.

[0083] In the above embodiments, by drawing the circumscribed rectangle of the abnormal via pattern to obtain the first circumscribed rectangle, the distance between the center of the first circumscribed rectangle and the center of the corresponding scanning circle can be calculated to obtain the via pattern distance, that is, the distance between the abnormal via pattern and the corresponding via pattern of the base layer. Multiple distances are compared, and the abnormal via pattern with the smallest distance to the center of the corresponding scanning circle is selected, that is, the target abnormal via pattern. The method of determining the center is simple and convenient for distance calculation.

[0084] The repeating unit 50 is used to perform repeating steps, repeating the first drawing step, the second drawing step, the first determining step, and the second determining step at least once in sequence, until all the above-mentioned layer scans are completed.

[0085] To further improve the detection efficiency of process hotspots, in one optional embodiment, after the second determining step described above, the apparatus further includes:

[0086] The first processing unit is used to hide the base layer before the first drawing step, the second drawing step, the first determining step, and the second determining step are repeated at least once in sequence until all the layer scans are completed.

[0087] In the above embodiments, after the base layer is scanned, it is hidden, and the remaining layers are scanned in sequence. This reduces the workload of drawing the via patterns of all layers other than the base layer on the base layer, thus improving efficiency. For example, the photolithography pattern includes layers A, B, C, and D. After layer A is scanned as the base layer, it is hidden. Then, layers B, C, and D are scanned. After layer B is scanned as the base layer, it is also hidden. Then, layers C and D are scanned. After layer C is scanned as the base layer, it is also hidden. Since only layer D remains, the scanning and detection of all process hotspots are completed.

[0088] To improve the yield of the base circuit, in one optional embodiment, the above-mentioned device further includes:

[0089] The second processing unit is used to adjust the photolithography pattern to eliminate all the abnormal via pattern groups after repeating the first drawing step, the second drawing step, the first determination step and the second determination step at least once in sequence until all the above-mentioned layer scanning is completed.

[0090] In the above embodiments, by adjusting the photolithography pattern and increasing the distance between the abnormal via pattern in the abnormal via pattern group and the corresponding via pattern in the base layer, all the abnormal via pattern groups can be eliminated, thus avoiding short circuits caused by process hotspots after manufacturing.

[0091] In the aforementioned apparatus for determining process hotspots, the first drawing unit performs a first drawing step, drawing the through-hole patterns of all layers other than the base layer onto the base layer to obtain a through-hole pattern layout, ensuring that the relative positions of the through-hole patterns remain unchanged, and the base layer is any one of the aforementioned layers; the second drawing unit performs a second drawing step, drawing multiple scanning circles on the through-hole pattern layout with the center of each through-hole pattern in the base layer as the center and a predetermined distance as the radius, the scanning circles corresponding one-to-one with the through-hole patterns in the base layer, and the through-hole patterns in the base layer being the through-hole patterns in the base layer; the first determination The unit performs a first determination step, identifying the through-hole patterns in the above-mentioned through-hole pattern layout that overlap with each of the above-mentioned scanning circles as abnormal through-hole patterns; the second determination unit performs a second determination step, identifying the above-mentioned abnormal through-hole patterns corresponding to the above-mentioned scanning circles and the above-mentioned base layer through-hole patterns corresponding to the above-mentioned scanning circles as abnormal through-hole pattern groups, completing the scanning of the above-mentioned base layer, and the above-mentioned abnormal through-hole pattern groups are combinations of the above-mentioned through-hole patterns that may be process hotspots; the repeating unit performs a repeating step, repeating the above-mentioned first drawing step, the above-mentioned second drawing step, the above-mentioned first determination step and the above-mentioned second determination step at least once in sequence, until all the above-mentioned layers are scanned. This device uses one layer as a base layer and draws the via patterns of other layers onto the base layer. Scanning circles are drawn with a predetermined radius, centered on the center of each via in the base layer. Vias overlapping with these scanning circles in the via pattern are identified as abnormal vias. These abnormal vias, along with the scanned ones, form abnormal via groups, which represent potential hotspots. Scanning all layers sequentially as base layers yields all abnormal via groups, thus completing the detection of hotspots. This eliminates the need to calculate the distance between all vias to determine if a hotspot is present, significantly improving detection efficiency and solving the problem of low efficiency in existing technologies. Furthermore, since small distances between vias can lead to short circuits and hotspots, this method also uses the distance between vias to detect hotspots, ensuring accuracy while improving efficiency.

[0092] This application also provides a photolithography layout design system, including: one or more processors, a memory, a display device, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs include methods for performing any of the above-described methods.

[0093] In the aforementioned photolithography layout design system, this system uses one layer as the base layer and draws the via patterns of other layers onto the base layer. A scanning circle is drawn with the center of the via in the base layer as the center and a predetermined distance as the radius. Vias in the via pattern that overlap with each scanning circle are identified as abnormal vias, thus confirming that the scanned vias are abnormal. The vias in the base layer and the scanned abnormal vias form an abnormal via group, which represents a combination of vias that may be process hotspots. All layers are scanned sequentially as base layers to obtain all abnormal via groups, completing the detection of process hotspots. This eliminates the need to calculate the distance between all vias to determine if a site is a process hotspot, significantly improving the detection efficiency and solving the problem of low detection efficiency in existing technologies. Furthermore, since small distances between vias can lead to short circuits and process hotspots, this method also uses the distance between vias to detect process hotspots, ensuring accuracy while improving efficiency.

[0094] Example 1

[0095] like Figure 3 As shown, taking a photolithography pattern including layers A, B, C, and D as an example, layer A (via) is used as the base layer, and layers B, C, and D are used as the layers to be queried, as follows. Figure 4 As shown, the apparatus for determining process hotspots includes the following steps:

[0096] Step 1: Take the first via pattern in layer A, i.e. via pattern viaA, and draw a unit circle base_round with the center of the outer rectangle of via pattern viaA as the center.

[0097] Step 2: Using the center of the outer rectangle of the via pattern as the center, set the radius R to a predetermined distance, and translate and scale the base_round to obtain the scanned circle round;

[0098] Step 3: Find the overlapping area between vias and rounds in layer B (overlapping B); find the overlapping area between vias and rounds in layer C (overlapping C); find the overlapping area between vias and rounds in layer D (overlapping D), and so on. Figure 5 and Figure 6 As shown, step 4 is executed for overlappingB, overlappingC, and overlappingD;

[0099] Step 4: If the overlapping has a via graphic, proceed to step 5; otherwise, proceed to step 6.

[0100] Step 5: If the number of via patterns in the overlapping pattern `num` = 1, then the via pattern in the overlapping pattern and the current via pattern `viaA` form a viapair and store it in the `viapairs` queue. If `num` > 1, then calculate the distance between each via pattern in the overlapping pattern and the via pattern `viaA`. The via pattern with the smallest distance forms a viapair with the via pattern `viaA` and stores it in the `viapairs` queue. Figure 7 As shown;

[0101] Step 6: If via pattern A is the last via pattern in layer A, then the scan of layer A is complete. Figure 8 As shown, otherwise, take the next via pattern in layer A, which we also call viaA, and proceed to step 2.

[0102] In addition, after scanning layer A, hide it. Then scan the remaining layers B, C, and D, repeating the above steps. After scanning layer B as the base layer, hide layer B as well. Then scan the remaining layers C and D, repeating the above steps. After scanning layer C as the base layer, hide layer C as well. Since only layer D remains, the scanning and detection of all process hotspots is completed.

[0103] The aforementioned hot spot determination device includes a processor and a memory. The first drawing unit, the second drawing unit, the first determination unit, the second determination unit, and the repeating unit are all stored in the memory as program units. The processor executes the aforementioned program units stored in the memory to achieve the corresponding functions.

[0104] The processor contains a kernel, which retrieves the corresponding program unit from memory. One or more kernels can be configured, and adjusting kernel parameters can address the low detection efficiency of process hotspots in existing technologies.

[0105] The memory may include non-permanent memory in computer-readable media, such as random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM, and the memory includes at least one memory chip.

[0106] This invention provides a computer-readable storage medium having a program stored thereon, which, when executed by a processor, implements the above-described method.

[0107] This invention provides a processor for running a program, wherein the program executes the method described above when it runs.

[0108] This invention provides a device including a processor, a memory, and a program stored in the memory and executable on the processor. When the processor executes the program, it performs at least the following steps:

[0109] Step S101, the first drawing step, draws the through hole patterns of all the above layers other than the base layer on the base layer to obtain the through hole pattern layout, so that the relative positions between the through hole patterns remain unchanged, and the base layer is any one of the above layers.

[0110] Step S102, the second drawing step, taking the center of the through hole pattern of each of the above-mentioned base layer as the center and the predetermined distance as the radius, draw multiple scanning circles on the through hole pattern layout. The scanning circles correspond one-to-one with the through hole patterns of the base layer. The through hole patterns of the base layer are the through hole patterns in the base layer.

[0111] Step S103, first determination step, the through hole pattern in the above through hole pattern layout that has an overlapping area with each of the above scanning circles is determined as an abnormal through hole pattern.

[0112] Step S104, the second determination step, determines the abnormal through hole pattern corresponding to the above scanning circle and the through hole pattern of the base layer corresponding to the above scanning circle as an abnormal through hole pattern group, and completes the scanning of the base layer. The abnormal through hole pattern group is a combination of the through hole patterns that may be process hotspots.

[0113] Step S105: Repeat the steps, repeating the first drawing step, the second drawing step, the first determining step, and the second determining step at least once in sequence, until all the above-mentioned layer scans are completed.

[0114] The devices mentioned in this article can be servers, PCs, tablets, mobile phones, etc.

[0115] This application also provides a computer program product, which, when executed on a data processing device, is suitable for executing an initialization program having at least the following method steps:

[0116] Step S101, the first drawing step, draws the through hole patterns of all the above layers other than the base layer on the base layer to obtain the through hole pattern layout, so that the relative positions between the through hole patterns remain unchanged, and the base layer is any one of the above layers.

[0117] Step S102, the second drawing step, taking the center of the through hole pattern of each of the above-mentioned base layer as the center and the predetermined distance as the radius, draw multiple scanning circles on the through hole pattern layout. The scanning circles correspond one-to-one with the through hole patterns of the base layer. The through hole patterns of the base layer are the through hole patterns in the base layer.

[0118] Step S103, first determination step, the through hole pattern in the above through hole pattern layout that has an overlapping area with each of the above scanning circles is determined as an abnormal through hole pattern.

[0119] Step S104, the second determination step, determines the abnormal through hole pattern corresponding to the above scanning circle and the through hole pattern of the base layer corresponding to the above scanning circle as an abnormal through hole pattern group, and completes the scanning of the base layer. The abnormal through hole pattern group is a combination of the through hole patterns that may be process hotspots.

[0120] Step S105: Repeat the steps, repeating the first drawing step, the second drawing step, the first determining step, and the second determining step at least once in sequence, until all the above-mentioned layer scans are completed.

[0121] In the above embodiments of the present invention, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0122] In the several embodiments provided in this application, it should be understood that the disclosed technical content can be implemented in other ways. The device embodiments described above are merely illustrative; for example, the division of units described above can be a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between units or modules may be electrical or other forms.

[0123] The units described above as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0124] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0125] If the aforementioned integrated units are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a computer-readable storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned computer-readable storage medium includes various media capable of storing program code, such as USB flash drives, read-only memory (ROM), random access memory (RAM), portable hard drives, magnetic disks, or optical disks.

[0126] As can be seen from the above description, the embodiments of this application achieve the following technical effects:

[0127] 1) In the method for determining the process hotspots of this application, firstly, a first drawing step is performed, in which the through-hole patterns of all the aforementioned layers other than the base layer are drawn on the aforementioned base layer to obtain a through-hole pattern layout, such that the relative positions between the aforementioned through-hole patterns remain unchanged, and the aforementioned base layer is any of the aforementioned layers; then, a second drawing step is performed, in which multiple scanning circles are drawn on the aforementioned through-hole pattern layout with the center of each of the aforementioned base layer through-hole patterns as the center and a predetermined distance as the radius, the aforementioned scanning circles correspond one-to-one with the aforementioned through-hole patterns of the aforementioned base layer, and the aforementioned base layer through-hole patterns are the aforementioned through-hole patterns in the aforementioned base layer; Then, the first determination step is performed to identify the through-hole patterns in the above-mentioned through-hole pattern layout that overlap with each of the above-mentioned scanning circles as abnormal through-hole patterns; then, the second determination step is performed to identify the abnormal through-hole patterns corresponding to the above-mentioned scanning circles and the through-hole patterns of the above-mentioned base layer corresponding to the above-mentioned scanning circles as abnormal through-hole pattern groups, and the scanning of the above-mentioned base layer is completed. The abnormal through-hole pattern group is a combination of the above-mentioned through-hole patterns that may be process hotspots; finally, the repeating step is performed, and the above-mentioned first drawing step, the above-mentioned second drawing step, the above-mentioned first determination step and the above-mentioned second determination step are repeated at least once in sequence until all the above-mentioned layers are scanned. This method uses one layer as a base layer and draws the via patterns of other layers onto the base layer. A scanning circle is drawn with the center of the via in the base layer as the center and a predetermined distance as the radius. Vias in the via pattern that overlap with each scanning circle are identified as abnormal vias, thus confirming that all scanned vias are abnormal. The vias in the base layer and the scanned abnormal vias form an abnormal via group, which represents a combination of vias that may be process hotspots. Scanning all layers sequentially as base layers yields all abnormal via groups, completing the detection of process hotspots. This eliminates the need to calculate the distance between all vias to determine if a hotspot is a process hotspot, significantly improving detection efficiency and solving the problem of low detection efficiency in existing technologies. Furthermore, since small distances between vias can lead to short circuits and process hotspots, this method also uses the distance between vias to detect process hotspots, ensuring accuracy while improving efficiency.

[0128] 2) In the process hotspot determination device of this application, the first drawing unit performs a first drawing step, drawing the through-hole patterns of all the above-mentioned layers other than the base layer onto the base layer to obtain a through-hole pattern layout, such that the relative positions between the through-hole patterns remain unchanged, and the base layer is any one of the above-mentioned layers; the second drawing unit performs a second drawing step, drawing multiple scanning circles on the through-hole pattern layout with the center of each through-hole pattern of the base layer as the center and a predetermined distance as the radius, the scanning circles corresponding one-to-one with the through-hole patterns of the base layer, and the through-hole patterns of the base layer are the through-hole patterns in the base layer; First The determining unit performs a first determining step, identifying the through-hole patterns in the above-mentioned through-hole pattern layout that overlap with each of the above-mentioned scanning circles as abnormal through-hole patterns; the second determining unit performs a second determining step, identifying the abnormal through-hole patterns corresponding to the above-mentioned scanning circles and the through-hole patterns in the base layer corresponding to the above-mentioned scanning circles as abnormal through-hole pattern groups, completing the scanning of the above-mentioned base layer, and the abnormal through-hole pattern groups are combinations of the above-mentioned through-hole patterns that may be process hotspots; the repeating unit performs a repeating step, repeating the above-mentioned first drawing step, the above-mentioned second drawing step, the above-mentioned first determining step and the above-mentioned second determining step at least once in sequence, until all the above-mentioned layers are scanned. This device uses one layer as a base layer and draws the via patterns of other layers onto the base layer. Scanning circles are drawn with a predetermined radius, centered on the center of each via in the base layer. Vias overlapping with these scanning circles in the via pattern are identified as abnormal vias. These abnormal vias, along with the scanned ones, form abnormal via groups, which represent potential hotspots. Scanning all layers sequentially as base layers yields all abnormal via groups, thus completing the detection of hotspots. This eliminates the need to calculate the distance between all vias to determine if a hotspot is present, significantly improving detection efficiency and solving the problem of low efficiency in existing technologies. Furthermore, since small distances between vias can lead to short circuits and hotspots, this method also uses the distance between vias to detect hotspots, ensuring accuracy while improving efficiency.

[0129] 3) In the photolithography layout design system of this application, the system uses one layer as the base layer and draws the via patterns of other layers onto the base layer. The center of the via in the base layer is the center of a circle, and a scanning circle is drawn with a predetermined distance as the radius. The vias in the via pattern that overlap with each scanning circle are identified as abnormal vias, that is, the scanned vias are identified as abnormal vias. The vias in the base layer and the scanned abnormal vias form an abnormal via group, which is a combination of vias that may be process hotspots. All layers are scanned sequentially as base layers to obtain all abnormal via groups, thus completing the detection of process hotspots. There is no need to calculate the distance between all vias to determine whether it is a process hotspot, which greatly improves the detection efficiency of process hotspots and solves the problem of low detection efficiency of process hotspots in the prior art. Furthermore, since the distance between vias is too small, it may cause short circuits and process hotspots. This method also realizes the detection of process hotspots by the distance between vias, which ensures the accuracy of process hotspot detection while improving detection efficiency.

[0130] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for determining process hotspots, characterized in that, The photolithography pattern includes multiple layers, each layer including multiple via patterns, and the method includes: The first drawing step involves drawing the through-hole patterns of all layers other than the base layer onto the base layer to obtain a through-hole pattern layout, ensuring that the relative positions of the through-hole patterns remain unchanged, and the base layer being any one of the layers. The second drawing step involves drawing multiple scanning circles on the through-hole pattern map with the center of each through-hole pattern in the base layer as the center and a predetermined distance as the radius. Each scanning circle corresponds one-to-one with the through-hole pattern in the base layer. The through-hole pattern in the base layer is the through-hole pattern in the base layer. The first determination step is to identify the through-hole patterns in the through-hole pattern layout that have overlapping areas with each of the scanning circles as abnormal through-hole patterns. The second determination step involves identifying the abnormal through-hole pattern corresponding to the scanning circle and the through-hole pattern of the base layer corresponding to the scanning circle as an abnormal through-hole pattern group, thereby completing the scanning of the base layer. The abnormal through-hole pattern group is a combination of through-hole patterns that may be process hotspots. Repeat the steps, sequentially repeating the first drawing step, the second drawing step, the first determining step, and the second determining step at least once, until all the layer scans are completed.

2. The method according to claim 1, characterized in that, The abnormal via pattern group includes two via patterns. The abnormal via pattern corresponding to the scanning circle and the via pattern of the base layer corresponding to the scanning circle are defined as the abnormal via pattern group, including: When there is only one abnormal via pattern corresponding to the scanning circle, the abnormal via pattern corresponding to the scanning circle and the via pattern of the base layer corresponding to the scanning circle are determined as the abnormal via pattern group; When there are multiple abnormal via patterns corresponding to the scanning circle, the target abnormal via pattern corresponding to the scanning circle and the via pattern of the base layer corresponding to the scanning circle are determined as the abnormal via pattern group, and the target abnormal via pattern is the abnormal via pattern with the smallest distance from the center of the corresponding scanning circle.

3. The method according to claim 2, characterized in that, Before determining the target abnormal via pattern corresponding to the scanning circle and the via pattern of the base layer corresponding to the scanning circle as the abnormal via pattern group, the method further includes: Draw the outer rectangle of each abnormal through-hole pattern corresponding to the scanning circle to obtain a plurality of first outer rectangles; Calculate the distance between the center of each of the first circumscribed rectangles and the center of the corresponding scanning circle to obtain the distance between multiple through-hole patterns; The abnormal through-hole pattern with the smallest distance from the through-hole pattern is identified as the target abnormal through-hole pattern.

4. The method according to claim 1, characterized in that, After the second determining step and before the repeating step, the method further includes: Hide the aforementioned base layer.

5. The method according to claim 1, characterized in that, Prior to the second drawing step, the method further includes: Draw the outer rectangle of each of the through hole patterns in the base layer to obtain multiple second outer rectangles, and the second outer rectangles correspond one-to-one with the through hole patterns in the base layer; The center of the second circumscribed rectangle is determined as the center of the corresponding through-hole pattern in the base layer.

6. The method according to any one of claims 1 to 5, characterized in that, Following the repeated steps, the method further includes: Adjust the photolithography pattern to eliminate all the abnormal via pattern groups.

7. The method according to any one of claims 1 to 5, characterized in that, The distance between any two through-hole patterns in the same layer is greater than the predetermined distance.

8. A device for determining process hotspots, characterized in that, The photolithography pattern includes multiple layers, each layer including multiple via patterns, and the apparatus includes: The first drawing unit is used to perform the first drawing step, drawing the through-hole patterns of all layers other than the base layer on the base layer to obtain a through-hole pattern layout, such that the relative positions between the through-hole patterns remain unchanged, and the base layer is any one of the layers; The second drawing unit is used to perform the second drawing step, drawing multiple scanning circles on the through hole pattern layout with the center of each through hole pattern of the base layer as the center and a predetermined distance as the radius. The scanning circles correspond one-to-one with the through hole patterns of the base layer, and the through hole patterns of the base layer are the through hole patterns in the base layer. The first determining unit is used to perform the first determining step, which determines the through-hole pattern in the through-hole pattern layout that has an overlapping area with each of the scanning circles as an abnormal through-hole pattern. The second determining unit is used to perform the second determining step, determining the abnormal through hole pattern corresponding to the scanning circle and the through hole pattern of the base layer corresponding to the scanning circle as an abnormal through hole pattern group, and completing the scanning of the base layer. The abnormal through hole pattern group is a combination of through hole patterns that may be process hotspots. The repeating unit is used to perform repeating steps, sequentially repeating the first drawing step, the second drawing step, the first determining step, and the second determining step at least once, until all the layer scans are completed.

9. A computer-readable storage medium, characterized in that, The computer-readable storage medium includes a stored program, wherein when the program is executed by a processor, the processor performs the method according to any one of claims 1 to 7.

10. A photolithography layout design system, characterized in that, include: One or more processors, a memory, a display device, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, the one or more programs comprising methods for performing any one of claims 1 to 7.

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