Semiconductor cleaning device and method

Abstract

A semiconductor cleaning device and method includes: a machine body provided with a cleaning chamber, a wafer being clamped in the cleaning chamber, and the wafer rotating along with a rotating base in the machine body; a robotic arm rotating around an axis fixed to the machine body; a nozzle group including a second nozzle, a fourth nozzle, a third nozzle, and a first nozzle arranged in sequence, the nozzles being used to spray liquid to clean the wafer; an air injection device connected to the cleaning chamber, and used to generate compressed dry air to suppress the back-splash surface formed on the wafer by the liquid sprayed from the nozzle. The device provided by the present disclosure reduces the height of the back-splash surface formed on the wafer surface by the liquid sprayed from the nozzle during processing by changing the height of the nozzle group, the working position of the nozzle during the movement of the robotic arm, and adding the air injection device, thereby reducing the probability of other nozzles forming hanging drops, and at the same time reducing the water mark phenomenon caused by the hanging drops from the nozzle falling on the wafer surface, thereby improving the product yield.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a semiconductor cleaning device and method. Background Art

[0002] Etching machines are mainly used in aviation, machinery, and semiconductors. In the semiconductor field, etchers form process patterns by using physical or chemical treatment methods on wafer substrates. Etching machines are divided into two categories: chemical etchers and electrolytic etchers. In chemical etching, chemical solutions are used to achieve the purpose of etching through chemical reactions, while electrolytic etchers are a technology that removes materials through chemical or physical impact, which is used to clean residues such as silicide remaining on the wafer substrate.

[0003] When a chemical etcher cleans a wafer, the etcher uses its own mechanical arm to drive the nozzle to rotate, and the nozzle sprays liquid to clean the wafer surface. Usually, there are multiple nozzles. When a nozzle sprays liquid, the liquid will splash back on the wafer, causing the splashed liquid to form suspended droplets on other nozzles. When other nozzles work subsequently, the suspended droplets will fall and produce water marks on the wafer. Such water marks will cause particle defects on the wafer and reduce the product yield.

[0004] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute prior art known to ordinary technicians in the field. Summary of the Invention

[0005] The present disclosure provides a semiconductor cleaning device and method.

[0006] Other features and advantages of the present disclosure will become apparent from the following detailed description, or may be learned in part by practice of the present disclosure.

[0007] According to one aspect of the present disclosure, there is provided a semiconductor cleaning device, the device comprising:

[0008] A machine body, wherein the machine body is provided with a cleaning chamber, wherein a wafer is clamped in the cleaning chamber, and the wafer rotates along with a rotating base in the machine body;

[0009] A robotic arm, wherein the robotic arm rotates around an axis fixed to the machine body;

[0010] a nozzle group, the nozzle group being disposed at one end of the robotic arm, the nozzle group comprising a second nozzle, a fourth nozzle, a third nozzle, and a first nozzle arranged in sequence, the lengths of the third nozzle and the fourth nozzle being shorter than the length of the second nozzle, the nozzles being used to spray a chemical solution to clean the wafer;

[0011] An air injection device is connected to the cleaning chamber and is used to generate compressed dry air to depress the back splash surface formed above the wafer by the liquid sprayed from the nozzle.

[0012] In some embodiments of the present disclosure, based on the aforementioned solution, the lengths of the first nozzle and the second nozzle are equal, and the lengths of the third nozzle and the fourth nozzle are equal.

[0013] In some embodiments of the present disclosure, based on the aforementioned solution, the lengths of the third nozzle and the fourth nozzle are 1 to 3 mm shorter than the length of the second nozzle.

[0014] In some embodiments of the present disclosure, based on the aforementioned solution, the air injection device includes a compressed dry air device and a fan filter.

[0015] In some embodiments of the present disclosure, based on the aforementioned solution, the compressed dry air device is used to generate compressed dry air, and the compressed dry air acts on the top surface of the anti-splash surface in a vertical direction.

[0016] In some embodiments of the present disclosure, based on the aforementioned solution, the fan filter is used to filter the compressed dry air generated by the air injection device.

[0017] In some embodiments of the present disclosure, based on the aforementioned solution, the rotation of the robot arm around the axis includes counterclockwise rotation and clockwise rotation, and the rotational movement of the wafer includes clockwise rotation and counterclockwise rotation.

[0018] In some embodiments of the present disclosure, based on the aforementioned solution, when the wafer rotates counterclockwise and the robotic arm moves counterclockwise around the axis, the nozzle sprays the liquid medicine on the wafer.

[0019] In some embodiments of the present disclosure, based on the aforementioned solution, when the wafer rotates counterclockwise and the robotic arm moves clockwise around the axis, the nozzle does not spray the liquid medicine on the wafer.

[0020] In some embodiments of the present disclosure, based on the aforementioned solution, when the wafer rotates clockwise and the robotic arm moves clockwise around the axis, the nozzle sprays the liquid medicine on the wafer.

[0021] In some embodiments of the present disclosure, based on the aforementioned solution, when the wafer rotates clockwise and the robotic arm moves counterclockwise around the axis, the nozzle does not spray the liquid medicine on the wafer.

[0022] According to another aspect of the present disclosure, a semiconductor cleaning method is provided, the method comprising:

[0023] Providing a nozzle group, the nozzle group including a second nozzle, a fourth nozzle, a third nozzle, and a first nozzle arranged in sequence, the length of the third nozzle and the fourth nozzle being shorter than the length of the second nozzle, the nozzle group using a liquid sprayed by the nozzles to clean residue on the surface of the wafer;

[0024] An air injection device is provided, wherein the air injection device generates compressed dry air and passes the compressed dry air into the cleaning chamber, wherein the compressed dry air depresses the backsplash surface formed by the chemical solution above the wafer;

[0025] A robotic arm is provided, the nozzle group is arranged on the robotic arm, the robotic arm rotates back and forth relative to the wafer, and when the wafer rotates counterclockwise and the robotic arm rotates counterclockwise, the nozzle group sprays liquid on the surface of the wafer to clean the wafer.

[0026] In some embodiments of the present disclosure, based on the aforementioned solution, the method further includes: if the wafer rotates counterclockwise and the robotic arm rotates clockwise, the nozzle group stops spraying the liquid on the surface of the wafer.

[0027] In some embodiments of the present disclosure, based on the aforementioned solution, the air injection device includes a compressed dry air device and a fan filter, and the air injection device generates compressed dry air including:

[0028] A compressed dry air device and a fan filter are provided. The compressed dry air is generated by the compressed dry air device, and after the compressed dry air is filtered by the fan filter, the compressed dry air is passed into the cleaning chamber.

[0029] In some embodiments of the present disclosure, based on the aforementioned solution, the method further includes: if the wafer rotates clockwise and the robotic arm rotates clockwise, the nozzle group sprays the liquid medicine on the surface of the wafer.

[0030] In some embodiments of the present disclosure, based on the aforementioned solution, the method further includes: if the wafer rotates clockwise and the robotic arm rotates counterclockwise, the nozzle group stops spraying the liquid on the surface of the wafer.

[0031] The present disclosure provides a semiconductor cleaning device, in a first aspect, which, by setting the heights of multiple nozzles in the device to different levels, prevents the back-splashing surface formed by the liquid sprayed from the nozzles from forming hanging droplets on adjacent nozzles, thereby improving the formation of hanging droplets from the nozzles. Simultaneously, the reduction of hanging droplets from the nozzles can improve the yield rate of subsequent wafer processing.

[0032] Secondly, the device is equipped with an air injection device to spray compressed dry air above the wafer, which lowers the back-splash surface formed by the liquid above the wafer, reduces the height of the back-splash surface, and reduces the probability of the back-splash surface forming hanging drops on the nozzle, thereby ensuring the flow rate and pressure of the liquid sprayed from the nozzle;

[0033] On the third aspect, the device provided by the present invention changes the direction of the liquid splashing surface of the nozzle by changing the movement mode of the robotic arm, which can change the formation of hanging droplets on the nozzle, thereby ensuring that the active surface of the liquid on the wafer is not changed while improving the processing yield of the wafer.

[0034] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The accompanying drawings are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification, are used to explain the principles of the present disclosure. Obviously, the drawings described below are only some embodiments of the present disclosure, and those skilled in the art can derive other drawings based on these drawings without inventive effort.

[0036] Figure 1 This is a simplified structural diagram of a semiconductor cleaning device in an exemplary embodiment of the present disclosure.

[0037] Figure 2 Schematic diagram of nozzle length change of a semiconductor cleaning device in an exemplary embodiment of the present disclosure.

[0038] Figure 3 Schematic diagram of the movement of a robotic arm of a semiconductor cleaning device in an exemplary embodiment of the present disclosure.

[0039] Figure 4 The figure is a simplified structural diagram of an air injection device in an exemplary embodiment of the present disclosure.

[0040] Figure 5 The figure is a flow chart of a semiconductor cleaning method in an exemplary embodiment of the present disclosure.

[0041] Figure 6 The figure is a flow chart of the movement of a robotic arm and a wafer in a semiconductor cleaning method in an exemplary embodiment of the present disclosure.

[0042] The description of the accompanying drawings is as follows:

[0043] 1: Machine body; 2: Wafer; 3: Spray group;

[0044] 4: Robotic arm; 5: Air injection device; 11: Rotating base;

[0045] 31: first nozzle; 32: second nozzle; 33: third nozzle;

[0046] 34: Fourth nozzle; 51: Compressed dry air device; 52: Fan filter. DETAILED DESCRIPTION

[0047] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concepts of the example embodiments to those skilled in the art. Like reference numerals in the figures represent identical or similar structures, and thus their detailed descriptions will be omitted. Furthermore, the figures are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0048] Although relative terms such as "upper" and "lower" are used in this specification to describe the relationship of one illustrated component to another, these terms are used herein for convenience only, such as in accordance with the orientation of the illustrations in the accompanying drawings. It will be understood that if the illustrated device were flipped upside down, the component described as "upper" would become the component "lower." When a structure is referred to as "on" another structure, this may mean that the structure is integrally formed with the other structure, that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via the other structure.

[0049] The terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements / components / etc.; the terms "including" and "having" are used to express open-ended inclusion and mean that additional elements / components / etc. may be present in addition to the listed elements / components / etc.; the terms "first", "second" and "third" etc. are used only as labels and are not intended to limit the quantity of their objects.

[0050] During the wafer processing process, since residues of substances such as photoresist may remain on the wafer surface during other processes, a cleaning process is used to remove the residues on the wafer surface to ensure the accuracy of subsequent wafer processing. Taking a single-wafer water-washing and etching machine as an example, the wafer is placed on the processing table. Different chemical solutions, pure water, or cleaning gases are transmitted to the infusion tube through the cleaning liquid supply system of the device itself, and then different chemical solutions are sprayed through different nozzles. Since single-wafer cleaning can better control the distribution of cleaning solutions or pure water on the wafer surface, during the wafer cleaning process, the rotating device on the device table drives the wafer to perform circular motion at a certain speed. At the same time, the robotic arm equipped with a nozzle in the device also performs relative motion above the wafer in a back-and-forth sweeping manner. This makes single-wafer cleaning have the advantages of low consumption of cleaning solutions or pure water, high production process environment control capability, and small footprint. In addition, the cleaning solutions or pure water can be continuously refreshed in the device, which can effectively prevent cross contamination and have good process stability. In the semiconductor manufacturing process, single-wafer cleaning is one of the main cleaning methods.

[0051] However, during the wafer cleaning process, the liquid sprayed from the nozzle will form a back-splash surface on the surface of the wafer. Below the back-splash surface is a water mist area formed by the chemical liquid. The back-splash area will cover the nozzle mouth of the nozzle, causing the chemical liquid spray to condense into suspended droplets at other nozzle mouths. In the process of the nozzle spraying the chemical liquid, the presence of suspended droplets at the nozzle mouth will affect the flow rate and pressure of the chemical liquid sprayed from the nozzle. During the wafer processing process, due to changes in the chemical liquid flow rate and pressure, processing defects will be formed on the wafer surface, affecting the wafer yield and thus affecting the wafer output.

[0052] Therefore, in order to improve the above-mentioned defects, the present disclosure provides a semiconductor cleaning device and method.

[0053] The present disclosure provides a semiconductor cleaning device. Figure 1 FIG. 1 is a schematic structural diagram of a semiconductor cleaning device in an exemplary embodiment of the present disclosure. Figure 1 As shown, the device includes:

[0054] The machine body 1, the nozzle assembly 3, the robot arm 4 and the air injection device 5.

[0055] The machine body 1 is provided with a cleaning chamber, in which a wafer 2 is clamped. The wafer 2 rotates along with a rotating base 11 in the machine body 1 .

[0056] The rotational direction of the wafer 2 can be determined according to the rotational direction of the rotating base 11 . The wafer 2 is fixed on the rotating base 11 , and the wafer 2 rotates in a circle around the central axis of the wafer 2 on the rotating base 11 .

[0057] During wafer processing, if the wafer 2 is required to rotate clockwise, the rotation direction of the rotating base 11 in the device is set to be clockwise, so that the rotating base 11 drives the wafer 2 to rotate clockwise; if the wafer 2 is required to rotate counterclockwise, the rotation direction of the rotating base 11 in the device is set to be counterclockwise, so that the rotating base 11 drives the wafer 2 to rotate counterclockwise. In addition, the rotation speed of the wafer 2 can be determined according to actual processing needs, and it is required that the rotating base 11 and the wafer 2 have the same speed.

[0058] The machine body 1 can be a single-wafer water-washing and etching machine, or can be other types of etching machines. The machine can be selected according to the specific processing requirements of the wafer, and this disclosure does not make any specific limitations.

[0059] The robot arm 4 rotates around an axis fixed on the machine body 1 .

[0060] A robotic arm shaft is provided on the machine body 1, and the robotic arm shaft is used to fix the robotic arm 4, and the robotic arm 4 can rotate around the robotic arm shaft. The robotic arm 4 is set above the wafer 2, and the robotic arm 4 can make clockwise and counterclockwise periodic movements relative to the wafer 2. One end of the robotic arm 4 is fixed on the robotic arm shaft, and the other end is a free rotating end, and a nozzle is provided on the free rotating end.

[0061] When the nozzle sprays the liquid medicine, the wafer 2 and the robot arm 4 are in a rotational motion state, especially when the wafer 2 rotates counterclockwise and the robot arm 4 enters the area where the surface of the wafer 2 is located clockwise. Compared with when the wafer 2 rotates counterclockwise and the robot arm 4 leaves the area where the surface of the wafer 2 is located counterclockwise, the backsplash area generated is larger. Therefore, in order to reduce the area of ​​the backsplash zone, when the wafer 2 is in counterclockwise motion, the nozzle on the robot arm 4 only sprays the liquid medicine when the robot arm 4 leaves the area where the surface of the wafer 2 is located counterclockwise, and the nozzle does not spray the liquid medicine in other cases.

[0062] The same principle as above, when the wafer 2 rotates clockwise, when the robot arm 4 enters the area where the surface of the wafer 2 is located clockwise, the nozzle sprays the liquid medicine, and in other cases the nozzle does not spray the liquid medicine.

[0063] Among them, the nozzle group 3 is set at one end of the robotic arm 4, and the nozzle group 3 includes a second nozzle 32, a fourth nozzle 34, a third nozzle 33 and a first nozzle 31 arranged in sequence. The length of the third nozzle 33 and the fourth nozzle 34 is less than the length of the second nozzle 32. The nozzles are used to spray liquid to clean the wafer 2.

[0064] Taking a single-wafer water cleaning and etching machine as an example, the liquid sprayed by the second nozzle 32 is a mist of DIW (deionized water), the liquid sprayed by the fourth nozzle 34 is DIW, the liquid sprayed by the third nozzle 33 is a chemical liquid, and the liquid sprayed by the first nozzle 31 is Hot IPA (Hot Isopropyl Alcohol). During the process of processing the wafer 2 by the second nozzle 32, the mist of DIW will form the following after being sprayed on the surface of the wafer 2. Figure 1 The back-splashing area is shown in the dotted triangle area. At the same time, due to the mist DIW sprayed by the second nozzle 32, a water mist area is formed in the surrounding area of ​​the nozzle group 3 (the water mist area is shown in FIG. Figure 1 The middle dotted rectangle shows the area), the combined effect of the backsplash area and the water mist area will cause hanging drops to form at the nozzle openings of the fourth nozzle 34 and the third nozzle 33 which are originally at the same height as the second nozzle 32.

[0065] In this disclosure, Figure 2 As shown, Figure 2 The figure shows the adjustment of the position of the fourth nozzle 34 relative to the second nozzle 32. The fourth nozzle 34 is set to a height smaller than the second nozzle 32. The fourth nozzle 34 is 1-3 mm shorter than the second nozzle 32. For example, the fourth nozzle 34 can be 2 mm shorter than the second nozzle 32. In this way, the height of the nozzle opening of the fourth nozzle 34 is raised relative to the surface of the wafer 2, so that the nozzle opening of the fourth nozzle 34 is away from the water mist area (as shown in the dotted area in the figure). When the second nozzle 32 sprays liquid, even if a backsplash area and a water mist area are formed, the nozzle opening of the fourth nozzle 34 will not be affected by the liquid sprayed from the second nozzle 32.

[0066] Since the third nozzle 33 is also within the influence range of the backsplash zone and the water mist zone of the second nozzle 32, the third nozzle 33 and the fourth nozzle 34 have the same length and the same working principle, which will not be repeated here.

[0067] In addition, since the first nozzle 31 is far away from the second nozzle 32, the backsplash zone and the water mist zone have little effect on the first nozzle 31, and the nozzle mouth shape of the first nozzle 31 is different from the nozzle mouth shapes of other nozzles. Due to the above reasons, there is no need to change the length of the first nozzle 31.

[0068] The order of action and length of each nozzle of the above-mentioned nozzle group 3 can be determined according to the specific settings of the device. The length of the nozzle is determined according to the order of spraying the liquid by different nozzles and the influence between each nozzle. The present disclosure includes but is not limited to the above-mentioned nozzle group 3.

[0069] The nozzle group can be composed of 4 nozzles, but according to the cleaning needs of different machines, the number of nozzles can be greater than 4 or less than 4, and the arrangement is not limited to the second nozzle 32, the fourth nozzle 34, the third nozzle 33 and the first nozzle 31 arranged in sequence as described above in the present disclosure; at the same time, the form of the liquid sprayed by the nozzle can also be determined according to the specific cleaning needs of the wafer 2, and the present disclosure includes but is not limited to the form of the above-mentioned nozzle group 3.

[0070] The air injection device 5 is connected to the cleaning chamber of the machine body 1 , and is used to generate compressed dry air to suppress the back-splash surface formed by the chemical solution sprayed from the nozzle above the wafer 2 .

[0071] like Figure 4 As shown, the air injection device 5 includes a compressed dry air device 51 and a fan filter 52, wherein the compressed dry air device 51 is used to generate compressed dry air to adjust the pressure in the chamber. The compressed dry air acts on the top surface of the back-splash surface formed by the nozzle liquid in the vertical direction. The fan filter 52 is used to filter the compressed dry air generated by the air injection device 5, so that downward air is always generated in the chamber, maintaining the downward pressure state in the chamber.

[0072] Taking a single-wafer water-cleaning etcher as an example, the Dry Blew setting in the cleaning chamber of the etcher can be used to set the process flow, so that the compressed dry air device 51 and the fan filter 52 in the machine body work simultaneously (previously, the Dry Blew setting would only be activated when the pressure in the chamber was too low). The air filtered by the fan filter 52 and the compressed gas generated by the compressed dry air device 51 enter the cleaning chamber together. After mixing, the compressed dry air with a higher pressure acts on the backsplash surface and the water mist area. The compressed dry air lowers the top surface of the backsplash surface through its own pressure, so that the water mist area and backsplash area generated by the nozzle do not affect other nozzles.

[0073] The air injection device 5 provided in the present disclosure can be a device of the etcher itself with parameter modifications to achieve the purpose of injecting compressed dry air, or it can be a compressed dry air device and a fan filter device added outside the etcher to achieve the purpose of generating compressed dry air. The present disclosure does not specifically limit the type and structure of the device for generating compressed air.

[0074] Figure 4 FIG. 1 is a schematic structural diagram of an air injection device in an exemplary embodiment of the present disclosure, as shown in FIG. Figure 4 As shown, combined Figure 1-3 , the structure and working process of the semiconductor cleaning device provided by the present disclosure are described:

[0075] First, before the device works, determine that the arrangement order of the nozzles in the nozzle group 3 is the second nozzle 32, the fourth nozzle 34, the third nozzle 33 and the first nozzle 31 are arranged in sequence, wherein the length of the first nozzle 31 is equal to that of the second nozzle 32, the length of the third nozzle 33 is equal to that of the fourth nozzle 34, and the length of the fourth nozzle 34 and the third nozzle 33 is set to be 1-3 mm shorter than the length of the second nozzle 32.

[0076] Secondly, since the rotation of the robot arm 4 around the axis includes counterclockwise rotation and clockwise rotation, and the rotational movement of the wafer 2 includes clockwise rotation and counterclockwise rotation, the nozzles in the nozzle group 3 are set to spray the liquid according to the movement direction of the wafer 2 and the robot arm 4: when the rotation of the wafer 2 is counterclockwise and the robot arm 4 moves counterclockwise around the axis, the nozzle sprays the liquid on the wafer 2; when the rotation of the wafer 2 is counterclockwise and the robot arm 4 moves clockwise around the axis, the nozzle does not spray the liquid on the wafer 2; when the rotation of the wafer 2 is clockwise and the robot arm 4 moves clockwise around the axis, the nozzle sprays the liquid on the wafer 2; when the rotation of the wafer 2 is clockwise and the robot arm 4 moves counterclockwise around the axis, the nozzle does not spray the liquid on the wafer 2.

[0077] Finally, during the processing of wafer 2, the air injection device 5 is started, so that the compressed air drying device 51 and the fan filter 52 in the air injection device 5 are put into operation. The air injection device 5 generates filtered compressed dry air, and the compressed dry air is passed through the cleaning chamber of the machine body 1. The pressure of the compressed dry air lowers the top surface of the back-splash surface formed by the nozzle liquid.

[0078] The semiconductor cleaning device provided by the present invention shortens the length of some nozzles in the device so that the backsplash formed by the liquid sprayed by the nozzle will not form hanging droplets on other nozzles; at the same time, by adding an air injection device in the device, the top of the backsplash surface formed by the liquid spraying is lowered; and the time for the nozzle to spray the liquid is changed in different directions of movement of the robotic arm, thereby changing the shape of the backsplash zone formed by the spraying liquid. Through the combined effect of the above methods, the influence of the backsplash zone formed by the nozzle spraying the liquid on other nozzles is reduced, ensuring the normal operation of other nozzles, thereby reducing the particle defects of the wafer and improving the product yield.

[0079] The present disclosure provides a semiconductor cleaning method, such as Figure 5 As shown, the semiconductor cleaning method includes:

[0080] S101: Providing a nozzle group, the nozzle group including a second nozzle, a fourth nozzle, a third nozzle, and a first nozzle arranged in sequence, wherein the lengths of the third nozzle and the fourth nozzle are shorter than the length of the second nozzle, and the nozzle group uses a liquid sprayed from the nozzles to clean residues on the surface of the wafer;

[0081] S102: Providing an air injection device, the air injection device generates compressed dry air, and passes the compressed dry air into the cleaning chamber, so that the compressed dry air depresses the back splash surface formed by the chemical solution above the wafer;

[0082] S103: Provide a robotic arm, and set the nozzle group on the robotic arm. The robotic arm rotates back and forth relative to the wafer. When the wafer rotates counterclockwise and the robotic arm rotates counterclockwise, the nozzle group sprays the liquid on the surface of the wafer to clean the wafer.

[0083] The method for cleaning semiconductor wafers is as follows: providing a nozzle group, the nozzle group including a second nozzle, a fourth nozzle, a third nozzle and a first nozzle arranged in sequence, the length of the third nozzle and the fourth nozzle being shorter than that of the second nozzle, and the nozzle group using a liquid medicine sprayed by the nozzles to clean residues on the surface of the wafer; providing an air injection device, the air injection device generating compressed dry air, passing the compressed dry air into a cleaning chamber, the compressed dry air depressing the backsplash surface formed by the liquid medicine above the wafer; providing a robotic arm, the nozzle group being arranged on the robotic arm, the robotic arm rotating back and forth relative to the wafer, and when the wafer rotates counterclockwise and the robotic arm rotates counterclockwise, the nozzle group sprays the liquid medicine on the surface of the wafer to clean the wafer.

[0084] The number of nozzles and the arrangement order of the nozzle group in the semiconductor cleaning method provided by the present disclosure include but are not limited to the above-mentioned methods; the air injection device can be a device provided by the machine itself to achieve the purpose of injecting compressed dry air by changing the parameter setting, or it can be a setting by adding an air injection device to the machine; the backsplash surface formed by the chemical liquid above the wafer includes various forms of backsplash forms such as the backsplash area formed by the chemical liquid itself and the water mist area, which are not limited by the present disclosure.

[0085] Among them, the air injection device includes a compressed dry air device and a fan filter air. The injection device generates compressed dry air, including: providing a compressed dry air device and a fan filter, generating compressed dry air through the compressed dry air device, and filtering the compressed dry air through the fan filter, and then passing the compressed dry air into the cleaning chamber.

[0086] Among them, Figure 6 As shown, the robotic arm performs a reciprocating motion relative to the wafer, including:

[0087] S1031: If the wafer rotates counterclockwise and the robotic arm rotates counterclockwise, the nozzle group sprays the chemical solution on the surface of the wafer;

[0088] S1032: If the wafer rotates counterclockwise and the robotic arm rotates clockwise, the nozzle group stops spraying the liquid on the wafer surface;

[0089] S1033: If the wafer rotates clockwise and the robotic arm rotates clockwise, the nozzle group sprays the chemical solution on the surface of the wafer;

[0090] S1034: If the wafer rotates clockwise and the robotic arm rotates counterclockwise, the nozzle group stops spraying the liquid on the wafer surface.

[0091] The movement direction of the above-mentioned robotic arm relative to the wafer determines the spraying of the nozzle liquid: when the wafer rotates counterclockwise and the robotic arm rotates counterclockwise, the nozzle group sprays the liquid on the surface of the wafer; if the wafer rotates counterclockwise and the robotic arm rotates clockwise, the nozzle group stops spraying the liquid on the surface of the wafer; if the wafer rotates clockwise and the robotic arm rotates clockwise, the nozzle group sprays the liquid on the surface of the wafer; if the wafer rotates clockwise and the robotic arm rotates counterclockwise, the nozzle group stops spraying the liquid on the surface of the wafer.

[0092] The semiconductor cleaning method provided by the present invention changes the shape and size of the back-splash surface formed by the nozzle liquid above the wafer by changing the height of some nozzles in the nozzle group, adding an air injection device, and determining the time for the nozzle to spray the liquid in different movement directions of the robot arm. This ensures that the back-splash surface formed when the nozzle is working will not form hanging droplets on the nozzle openings of other nozzles, thereby ensuring the spraying flow and pressure of other nozzles, reducing particle defects in the wafer processing process, and improving the product yield.

[0093] It should be noted that although the steps of the semiconductor cleaning method of the present disclosure are described in a specific order in the accompanying drawings, this does not require or imply that the steps must be performed in this specific order, or that all steps must be performed to achieve the desired results. Additionally or alternatively, certain steps may be omitted, multiple steps may be combined into one step, and / or one step may be broken down into multiple steps.

[0094] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present disclosure that follow the general principles of the present disclosure and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered as exemplary only, with the true scope and spirit of the present disclosure being indicated by the appended claims.

Claims

1. A semiconductor cleaning device, characterized in that: include: A machine body, wherein the machine body is provided with a cleaning chamber, wherein a wafer is clamped in the cleaning chamber, and the wafer rotates along with a rotating base in the machine body; A robotic arm, wherein the robotic arm rotates around an axis fixed to the machine body; a nozzle group, the nozzle group being disposed at one end of the robotic arm, the nozzle group comprising a second nozzle, a fourth nozzle, a third nozzle, and a first nozzle arranged in sequence, the lengths of the third nozzle and the fourth nozzle being shorter than the length of the second nozzle, the nozzles being used to spray a chemical solution to clean the wafer; An air injection device is connected to the cleaning chamber and is used to generate compressed dry air to depress the back splash surface formed above the wafer by the liquid sprayed from the nozzle.

2. The semiconductor cleaning device according to claim 1, characterized in that The first nozzle and the second nozzle have the same length, and the third nozzle and the fourth nozzle have the same length.

3. The semiconductor cleaning device according to claim 2, characterized in that The lengths of the third nozzle and the fourth nozzle are 1 to 3 mm shorter than the length of the second nozzle.

4. The semiconductor cleaning device according to claim 1, wherein The air injection device includes a compressed dry air device and a fan filter.

5. The semiconductor cleaning device according to claim 4, characterized in that The compressed dry air device is used to generate compressed dry air, and the compressed dry air acts on the top surface of the backsplash surface in a vertical direction.

6. The semiconductor cleaning device according to claim 4, characterized in that The fan filter is used to filter the compressed dry air generated by the air injection device.

7. The semiconductor cleaning device according to claim 1, wherein: The rotation of the robot arm around the axis includes counterclockwise rotation and clockwise rotation, and the rotational movement of the wafer includes clockwise rotation and counterclockwise rotation.

8. The semiconductor cleaning device according to claim 7, wherein: When the wafer rotates counterclockwise and the robotic arm moves counterclockwise around the axis, the nozzle sprays the liquid medicine onto the wafer.

9. The semiconductor cleaning device according to claim 7, wherein: When the wafer rotates counterclockwise and the robotic arm moves clockwise around the axis, the nozzle does not spray the chemical solution onto the wafer.

10. The semiconductor cleaning device according to claim 7, wherein: When the wafer rotates clockwise and the robotic arm moves clockwise around the axis, the nozzle sprays the liquid medicine onto the wafer.

11. The semiconductor cleaning device according to claim 7, wherein: When the wafer rotates clockwise and the robotic arm moves counterclockwise around the axis, the nozzle does not spray the chemical solution onto the wafer.

12. A semiconductor cleaning method, characterized in that: include: Providing a nozzle group, the nozzle group including a second nozzle, a fourth nozzle, a third nozzle, and a first nozzle arranged in sequence, the length of the third nozzle and the fourth nozzle being shorter than the length of the second nozzle, the nozzle group using a liquid sprayed by the nozzles to clean residue on the surface of the wafer; An air injection device is provided, wherein the air injection device generates compressed dry air and passes the compressed dry air into the cleaning chamber, wherein the compressed dry air depresses the backsplash surface formed by the chemical solution above the wafer; A robotic arm is provided, the nozzle group is arranged on the robotic arm, the robotic arm rotates back and forth relative to the wafer, and when the wafer rotates counterclockwise and the robotic arm rotates counterclockwise, the nozzle group sprays liquid on the surface of the wafer to clean the wafer.

13. The semiconductor cleaning method according to claim 12, wherein: The method further includes: if the wafer rotates counterclockwise and the robotic arm rotates clockwise, the nozzle group stops spraying the liquid on the surface of the wafer.

14. The semiconductor cleaning method according to claim 12, wherein: The air injection device includes a compressed dry air device and a fan filter, and the air injection device generates compressed dry air including: A compressed dry air device and a fan filter are provided. The compressed dry air is generated by the compressed dry air device, and after the compressed dry air is filtered by the fan filter, the compressed dry air is passed into the cleaning chamber.

15. The semiconductor cleaning method according to claim 12, wherein: The method further includes: if the wafer rotates clockwise and the robotic arm rotates clockwise, the nozzle group sprays the liquid medicine on the surface of the wafer.

16. The semiconductor cleaning method according to claim 12, wherein: The method further includes: if the wafer rotates clockwise and the robotic arm rotates counterclockwise, the nozzle group stops spraying the liquid on the surface of the wafer.

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