Composition for electronic device encapsulation, method for forming electronic device encapsulation film, and electronic device encapsulation film

Abstract

The composition for encapsulating electronic devices of the present invention is a composition for encapsulating electronic devices containing a photocurable monomer and a photopolymerization initiator. The photocurable monomer contains a photocurable monomer (A) having no aromatic hydrocarbon group and a photocurable monomer (B) having an aromatic hydrocarbon group, wherein the photocurable monomer (B) has a specific structure and contains a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, or a hydrocarbon group containing a heteroatom containing two or more substituted or unsubstituted phenyl groups, and the photocurable monomer (B) contains at least a mono(meth)acrylate or a di(meth)acrylate, and further contains a metal-containing compound (C) selected from metal alkoxide compounds, metal chelate compounds, silane compounds, silazane compounds and metal halide compounds.

Description

Technical Field

[0001] The present invention relates to an electronic device encapsulation composition, an electronic device encapsulation film forming method and an electronic device encapsulation film, and in particular to an electronic device encapsulation composition that can prevent moisture permeation, has excellent encapsulation performance and bending resistance, and can improve luminous efficiency. Background Art

[0002] For electronic devices, particularly organic electroluminescent devices (hereinafter also referred to as "organic EL devices" or "organic EL elements"), it has been proposed to cover the surface of the organic EL element with an encapsulation layer to prevent the organic materials and electrodes used from being degraded by moisture.

[0003] As a technology for encapsulating organic EL elements, for example, the technology described in Patent Document 1 discloses a display device, which is obtained by forming an organic protective film on the surface of an organic EL element by vapor deposition, inkjet or other methods using a composition including a monomer without an aromatic hydrocarbon group, a monomer with an aromatic hydrocarbon group, and a monomer with an aromatic hydrocarbon group containing two or more phenyl groups and heteroatoms and including a mono(meth)acrylate and a di(meth)acrylate.

[0004] However, the display device described in Patent Document 1 has a problem with water permeation under harsh conditions of high temperature and high humidity such as 85°C, 85% RH, and more than 100 hours because the diffusion coefficient of the organic protective film is too low. In addition, the stress difference and insufficient adhesion between the organic protective film and the adjacent layers cause problems with bending resistance when bent.

[0005] On the other hand, as a technology for encapsulating organic EL elements, for example, the technology described in Patent Document 2 discloses an organic EL device comprising: a first protective film formed on the surface of the organic EL element by a dry method (CVD method) so as to cover the organic EL element; and a second protective film formed on the surface of the first protective film by a wet method and used to fill the unattached portion of the first protective film.

[0006] However, in the organic EL device described in the above-mentioned patent document 2, the second protective film is modified under high temperature and high humidity environment. In addition, since the stress of the second protective film is large, the interface adhesion between the first protective film and the second protective film is deteriorated under high temperature and high humidity of 85°C and 85% RH for more than 100 hours (presumably), resulting in the problem of water permeation at the interface between the first protective film and the second protective film, thereby resulting in poor packaging performance. In addition, when such packaging is performed, there is a problem of deterioration of the luminous efficiency of the organic EL element.

[0007] Prior art literature

[0008] Patent Literature

[0009] Patent Document 1: Japanese Patent Application No. 2018-504735

[0010] Patent Document 2: Japanese Patent Application Publication No. 2005-56587 Summary of the invention

[0011] The present invention has been made in view of the above problems and circumstances, and aims to provide an electronic device encapsulating composition, an electronic device encapsulating film forming method, and an electronic device encapsulating film that can prevent moisture permeation, have excellent encapsulation performance and excellent bending resistance, and can further improve luminous efficiency.

[0012] In order to solve the above-mentioned problems, the present inventors have studied the causes of the above-mentioned problems, and in the process found that by containing a photocurable monomer (A) without an aromatic hydrocarbon group and a photocurable monomer (B) with an aromatic hydrocarbon group, and making the above-mentioned photocurable monomer (B) have a specific structure, and further containing a metal-containing compound (C) selected from metal alkoxide compounds, metal chelates, silane compounds, silazane compounds and metal halide compounds, it is possible to provide a composition for encapsulating electronic devices with excellent encapsulation performance, bending resistance and luminous efficiency, thereby completing the present invention.

[0013] That is, the above-mentioned problems of the present invention are solved by the following means.

[0014] 1. A composition for encapsulating electronic devices, comprising a photocurable monomer and a photopolymerization initiator,

[0015] The photocurable monomers include a photocurable monomer (A) having no aromatic hydrocarbon group and a photocurable monomer (B) having an aromatic hydrocarbon group.

[0016] The photocurable monomer (B) has a structure represented by the following general formula (1), comprising a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, or a heteroatom-containing hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, and:

[0017] The photocurable monomer (B) contains at least mono(meth)acrylate or di(meth)acrylate.

[0018] The present invention further contains a metal-containing compound (C) selected from the group consisting of metal alkoxide compounds, metal chelate compounds, silane compounds, silazane compounds and metal halide compounds.

[0019] General formula (1)

[0020]

[0021] [In the above general formula (1), P represents a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, or a heteroatom-containing hydrocarbon group containing two or more substituted or unsubstituted phenyl groups. 1 and Z 2 Each independently has a structure represented by the following general formula (2). a and b are each an integer of 0 to 2, and a+b is an integer of 1 to 4.]

[0022] General formula (2)

[0023]

[0024] [In the above general formula (2), * represents a linking portion to the carbon of P. X represents a single bond, O or S. Y represents a substituted or unsubstituted linear alkylene group having 1 to 10 carbon atoms, or a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms. R 1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. c is an integer of 0 or 1.]

[0025] 2. The composition for encapsulating an electronic device according to item 1, wherein the content of the metal-containing compound (C) is in the range of 0.1 to 15% by mass based on the entire composition for encapsulating an electronic device.

[0026] 3. The composition for encapsulating an electronic device according to item 1 or 2, wherein the metal M constituting the metal-containing compound (C) is at least any one of Ti, Si, Al and Zr.

[0027] 4. The composition for encapsulating an electronic device according to any one of items 1 to 3, wherein the photocurable monomer (A) is at least any one of a mono(meth)acrylate having an amino group, a di(meth)acrylate having a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms, a di(meth)acrylate having an ethyleneoxy group, a tri(meth)acrylate having an ethyleneoxy group, and a mono(meth)acrylate and a di(meth)acrylate having a cyclic carbonized alkyl group.

[0028] 5. The composition for electronic device encapsulation according to any one of items 1 to 4, wherein the photocurable monomer (B) is 4-(meth)acryloyloxy-2-hydroxybenzophenone, 3,3-diphenylethyl(meth)acrylate, benzoyloxyphenyl(meth)acrylate, bisphenol A di(meth)acrylate, epoxidized bisphenol A di(meth)acrylate, 2-phenylphenoxyethyl(meth)acrylate, 2,2'-phenylphenoxyethyldi(meth)acrylate, 2-phenylphenoxypropyl(meth)acrylate, 2,2'-phenylphenoxypropyldi(meth)acrylate, 2-phenylphenoxybutyl(meth)acrylate, 2,2'-phenylphenoxybutyldi(meth)acrylate, 2-(3-phenylphenyl)ethyl(meth)acrylate, 2-(4-benzylphenyl)ethyl(meth)acrylate, 2-(meth)acrylate Phenyl-2-(phenylthio)ethyl ester, 2-(triphenylmethoxy)ethyl (meth)acrylate, 4-(triphenylmethoxy)butyl (meth)acrylate, 3-(biphenyl-2-yloxy)butyl (meth)acrylate, 2-(biphenyl-2-yloxy)butyl (meth)acrylate, 4-(biphenyl-2-yloxy)propyl (meth)acrylate, 3-(biphenyl-2-yloxy)propyl (meth)acrylate, 2-(biphenyl-2-yloxy)propyl (meth)acrylate, 4-(biphenyl-2-yloxy)ethyl (meth)acrylate, 3-(biphenyl-2-yloxy)ethyl (meth)acrylate, 2-(4-benzylphenyl)ethyl (meth)acrylate, 4,4'-bis(acryloyloxymethyl)biphenyl, 2,2'-bis(2-acryloyloxyethoxy)biphenyl, any of their structural isomers or mixtures thereof.

[0029] 6. A method for forming an electronic device encapsulation film, comprising forming the encapsulation film using the electronic device encapsulation composition according to any one of items 1 to 5, the method comprising:

[0030] A step of forming a first encapsulation layer on an electronic device by a vapor phase method, and

[0031] A step of forming a second encapsulating layer by applying the electronic device encapsulating composition on the first encapsulating layer.

[0032] 7. The method for forming an electronic device encapsulation film according to item 6, further comprising the step of forming a third encapsulation layer on the second encapsulation layer by a vapor phase method.

[0033] 8. The method for forming an electronic device encapsulation film according to item 6 or 7, wherein the step of forming the second encapsulation layer uses an inkjet method.

[0034] 9. An electronic device packaging film, which packages electronic devices, having:

[0035] a first encapsulation layer containing silicon nitride, silicon oxide or silicon oxynitride, and

[0036] A second encapsulating layer obtained by using the electronic device encapsulating composition according to any one of items 1 to 5.

[0037] 10. The electronic device encapsulating film according to item 9, wherein the second encapsulating layer contains a polymer having a structure represented by the following general formula (3A) and the following general formula (3B), and the metal-containing compound (C).

[0038]

[0039] [In the above general formula (3A) and the above general formula (3B), R 1 represents a hydrogen atom or a methyl group. A is a structure without an aromatic hydrocarbon group. B is a structure having an aromatic hydrocarbon group, having the structure represented by the above general formula (1), including a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, or a hydrocarbon group containing a heteroatom containing two or more substituted or unsubstituted phenyl groups, and at least including a mono(meth)acrylate or a di(meth)acrylate.]

[0040] 11. The electronic device packaging film according to item 9 or 10, wherein a third packaging layer containing silicon nitride, silicon oxide or silicon oxynitride is provided on the second packaging layer.

[0041] 12. The electronic device encapsulating film according to any one of items 9 to 11, wherein a content of the metal-containing compound (C) in the second encapsulating layer is in the range of 0.1 to 15 mass %.

[0042] According to the above method of the present invention, a composition for encapsulating an electronic device, a method for forming an electronic device encapsulating film, and an electronic device encapsulating film that can prevent moisture permeation, have excellent encapsulation performance and excellent bending resistance, and can improve luminous efficiency can be provided.

[0043] The mechanism of expression and action of the effects of the present invention are not yet clear, but are presumed as follows.

[0044] (Water Permeation)

[0045] Since the composition for encapsulating electronic devices of the present invention contains the above-mentioned photocurable monomer (A) without an aromatic hydrocarbon group, the above-mentioned photocurable monomer (B) with an aromatic hydrocarbon group, and the above-mentioned metal-containing compound (C), the ligand of the above-mentioned metal-containing compound (C) forms a network in the polymer composed of the above-mentioned photocurable monomer (A) without an aromatic hydrocarbon group and the above-mentioned photocurable monomer (B) with an aromatic hydrocarbon group, i.e., the acrylic resin, and suppresses the microscopic Brownian motion and macroscopic Brownian motion of the polymer chain of the acrylic resin, and the oxycarbonyl group in the polymer interacts with water, thereby preventing the diffusion of water. In addition, the metal and ligand of the above-mentioned metal-containing compound (C) interact or react with water to suppress the movement of water, and in this respect, the diffusion of water is also prevented. As a result, water permeation is suppressed and the encapsulation performance is excellent.

[0046] (Luminous efficiency of electronic devices)

[0047] Since the second encapsulation layer contains not only a polymer of an organic compound but also the above-mentioned metal-containing compound (C) and a compound derived from the metal-containing compound (C) which are relatively similar in chemical structure to the compounds constituting the first encapsulation layer and the third encapsulation layer, the gradient caused by the difference in refractive index between the adjacent first encapsulation layer / second encapsulation layer / third encapsulation layer is mitigated, thereby suppressing reflection of light between the layers, thereby improving light extraction efficiency, that is, improving the luminous efficiency of the electronic device.

[0048] (Bending resistance)

[0049] The metal or ligand contained in the metal-containing compound (C) contained in the second encapsulation layer has an interaction or affinity with the compound constituting the adjacent layer, so that, for example, the interaction with the adjacent first encapsulation layer or third encapsulation layer becomes stronger, and the adhesion is improved. As a result, the resistance to the interlayer stress generated by bending is improved, and the bending resistance is excellent.

[0050] In addition, the metal-containing compound (C) prevents water diffusion, and thus reliability can be ensured even with a thin film. A thin film reduces stress during bending and reduces delamination. DETAILED DESCRIPTION

[0051] The composition for encapsulating electronic devices of the present invention contains a photocurable monomer and a photopolymerization initiator. The photocurable monomer contains a photocurable monomer (A) having no aromatic hydrocarbon group and a photocurable monomer (B) having an aromatic hydrocarbon group. The photocurable monomer (B) has a structure represented by the following general formula (1), and contains a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, or a hydrocarbon group containing heteroatoms containing two or more substituted or unsubstituted phenyl groups. The photocurable monomer (B) contains at least a mono(meth)acrylate or a di(meth)acrylate, and further contains a metal-containing compound (C) selected from metal alkoxide compounds, metal chelate compounds, silane compounds, silazane compounds and metal halide compounds.

[0052] This feature is a common or corresponding technical feature in the following embodiments.

[0053] As an embodiment of the present invention, the content of the metal-containing compound (C) relative to the entire electronic device encapsulating composition is preferably in the range of 0.1 to 15 mass % in order to make the electronic device encapsulating composition photocurable and improve the luminous efficiency of the electronic device.

[0054] In addition, from the viewpoint of suppressing the migration of water and the permeation of water, the metal M constituting the metal-containing compound (C) is preferably at least any one of Ti, Si, Al and Zr.

[0055] In addition, in terms of improving the reliability of electronic devices and the inkjet ejection suitability, it is preferred that the photocurable monomer (A) is at least any one of a mono(meth)acrylate having an amino group, a di(meth)acrylate having a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms, a di(meth)acrylate having an ethyleneoxy group, a tri(meth)acrylate having an ethyleneoxy group, a mono(meth)acrylate and a di(meth)acrylate having a cyclic carbonized alkyl group.

[0056] In addition, in terms of improving the reliability of electronic devices and inkjet ejection suitability, the photocurable monomer (B) is preferably 4-(meth)acryloyloxy-2-hydroxybenzophenone, 3,3-diphenylethyl (meth)acrylate, benzoyloxyphenyl (meth)acrylate, bisphenol A di(meth)acrylate, epoxidized bisphenol A di(meth)acrylate, 2-phenylphenoxyethyl (meth)acrylate, 2,2'-phenylphenoxyethyl di(meth)acrylate, 2-phenylphenoxypropyl (meth)acrylate, 2,2'-phenylphenoxypropyl di(meth)acrylate, 2-phenylphenoxybutyl (meth)acrylate, 2,2'-phenylphenoxybutyl di(meth)acrylate, 2-(3-phenylphenyl)ethyl (meth)acrylate, 2-(4-benzylphenyl)ethyl (meth)acrylate, 2-phenylphenoxypropyl (meth)acrylate, 2,2'-phenylphenoxypropyl di(meth)acrylate, 2-phenylphenoxybutyl (meth)acrylate, 2,2'-phenylphenoxybutyl di(meth)acrylate, 2-(3-phenylphenyl)ethyl (meth)acrylate, 2-(4-benzylphenyl)ethyl (meth)acrylate, 2-phenylphenoxypropyl (meth)acrylate, 2,2'-phenylphenoxypropyl (meth)acrylate, 2,2'-phenylphenoxybutyl (meth)acrylate, 2 any of the following: 2-(phenylthio)ethyl (meth)acrylate, 2-(triphenylmethoxy)ethyl (meth)acrylate, 4-(triphenylmethoxy)butyl (meth)acrylate, 3-(biphenyl-2-yloxy)butyl (meth)acrylate, 2-(biphenyl-2-yloxy)butyl (meth)acrylate, 4-(biphenyl-2-yloxy)propyl (meth)acrylate, 3-(biphenyl-2-yloxy)propyl (meth)acrylate, 2-(biphenyl-2-yloxy)propyl (meth)acrylate, 4-(biphenyl-2-yloxy)ethyl (meth)acrylate, 3-(biphenyl-2-yloxy)ethyl (meth)acrylate, 2-(4-benzylphenyl)ethyl (meth)acrylate, 4,4'-bis(acryloyloxymethyl)biphenyl, 2,2'-bis(2-acryloyloxyethoxy)biphenyl, and any of their structural isomers or mixtures thereof.

[0057] The method for forming an electronic device encapsulation film of the present invention is a method for forming an encapsulation film using the above-mentioned electronic device encapsulation composition, and comprises: a step of forming a first encapsulation layer on an electronic device by a vapor phase method, and a step of forming a second encapsulation layer by coating the above-mentioned electronic device encapsulation composition on the above-mentioned first encapsulation layer. Thus, a method for forming an electronic device encapsulation film that can prevent water penetration, has excellent encapsulation performance and excellent bending resistance, and can further improve luminous efficiency can be provided.

[0058] In addition, it is preferable to include a step of forming a third encapsulating layer on the second encapsulating layer by a vapor phase method in order to achieve a more excellent encapsulating performance.

[0059] In addition, it is preferable to use an inkjet method in the step of forming the second sealing layer because the layer can be formed with high precision.

[0060] The electronic device encapsulating film of the present invention is an electronic device encapsulating film for encapsulating electronic devices, and comprises: a first encapsulating layer containing silicon nitride, silicon oxide or silicon oxynitride, and a second encapsulating layer obtained by using the composition for encapsulating electronic devices described in any one of items 1 to 5. Thus, it is possible to provide an electronic device encapsulating film that can prevent moisture permeation, has excellent encapsulation performance and excellent bending resistance, and can further improve luminous efficiency.

[0061] Hereinafter, the present invention and its constituent elements and forms and modes for carrying out the present invention will be described. It should be noted that in the present application, "to" is used to mean that the numerical values ​​described before and after it are included as the lower limit and the upper limit.

[0062] In this specification, "(meth)acrylic acid" means acrylic acid and / or methacrylic acid.

[0063] In addition, "substituted", unless otherwise defined, means that one or more hydrogen atoms in the functional group of the present invention are replaced by a hydroxyl group, a nitro group, an imino group (=NH, =NR, R is an alkyl group having 1 to 10 carbon atoms), an amidino group, a hydrazine or hydrazone group, a carboxyl group, an alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 30 carbon atoms, a heteroaryl group having 3 to 30 carbon atoms, or a heterocycloalkyl group having 2 to 30 carbon atoms.

[0064] In addition, the “hetero atom” refers to any atom selected from N, O, S and P, and “hetero” means that a carbon atom is substituted with any atom selected from N, O, S and P.

[0065] "Alkylene" refers to an alkanediyl group having no double bonds between the (meth)acrylate groups at both ends but connected by saturated hydrocarbon groups. The number of carbon atoms in the alkylene group refers only to the number of carbon atoms in the alkylene group itself, excluding the carbon atoms in the di(meth)acrylate group.

[0066] In addition, the "electronic device" in the present invention refers to a component that uses the kinetic energy and potential energy of electrons to generate, amplify, convert or control electrical signals. For example, active components such as light-emitting diode components, organic electroluminescent components, photoelectric conversion components and transistors can be cited. In addition, in the present invention, passive components such as resistors and capacitors that perform passive tasks such as "resistance" and "storage" against external influences are also included in electronic devices.

[0067] Therefore, the encapsulation composition of the present invention is used to form the above-mentioned encapsulation film for encapsulating electronic devices.

[0068] [Electronic device encapsulation composition]

[0069] The composition for encapsulating electronic devices of the present invention (hereinafter, also referred to as "encapsulating composition") is a composition for encapsulating electronic devices containing a photocurable monomer and a photopolymerization initiator, wherein the photocurable monomer contains a photocurable monomer (A) having no aromatic hydrocarbon group and a photocurable monomer (B) having an aromatic hydrocarbon group, wherein the photocurable monomer (B) has a structure represented by the following general formula (1) and contains a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups or a hydrocarbon group containing heteroatoms containing two or more substituted or unsubstituted phenyl groups, and the photocurable monomer (B) contains at least a mono(meth)acrylate or a di(meth)acrylate, and further contains a metal-containing compound (C) selected from metal alkoxide compounds, metal chelate compounds, silane compounds, silazane compounds and metal halide compounds.

[0070] The photocurable monomer is a photocurable monomer that can undergo a curing reaction by a photopolymerization initiator. As the photocurable monomer, a non-silicon monomer that does not contain silicon (Si) can be used, for example, a monomer composed only of elements selected from C, H, O, N or S, but not limited thereto. The photocurable monomer can be synthesized using a conventional synthesis method or purchased from a commercial product.

[0071] The photocurable monomer includes the photocurable monomer (A) having no aromatic hydrocarbon group and the photocurable monomer (B) having an aromatic hydrocarbon group.

[0072] <Photocurable monomer (A) not having an aromatic hydrocarbon group>

[0073] The above-mentioned photocurable monomer (A) not having an aromatic hydrocarbon group (hereinafter, also referred to as "photocurable monomer (A)") does not contain an aromatic hydrocarbon group, and may contain a monomer having 1 to 20, specifically 1 to 6, one or more selected from vinyl, acrylic and methacrylic groups as photocurable functional groups, for example, it may contain 1 to 3, 1 to 2, 1 or 2.

[0074] In the present invention, the weight average molecular weight of the photocurable monomer (A) can be in the range of 100 to 500 g / mol, 130 to 400 g / mol, or 200 to 300 g / mol. By keeping the weight average molecular weight of the monomer within the range, a more favorable effect can be achieved in the process.

[0075] The photocurable monomer (A) may include a monofunctional monomer or a polyfunctional monomer having a photocurable functional group, or a mixture thereof.

[0076] Specifically, the above-mentioned photocurable monomer (A) can be a (meth)acrylate monomer, which can be an unsaturated carboxylic acid ester having an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, a hydroxyl group and an alkyl group having 1 to 20 carbon atoms; an unsaturated carboxylic acid ester having an aminoalkyl group having 1 to 20 carbon atoms; a vinyl ester of a saturated or unsaturated carboxylic acid having 1 to 20 carbon atoms; a cyanide vinyl compound; an unsaturated amide compound; a monofunctional or polyfunctional (meth)acrylate of a monoalcohol or a polyol, etc.

[0077] The above-mentioned "polyol" may refer to an alcohol having two or more hydroxyl groups, and is an alcohol having 2 to 20, preferably 2 to 10, more preferably 2 to 6 hydroxyl groups.

[0078] In one example, the (meth)acrylate monomer having no aromatic hydrocarbon group in the photocurable monomer (A) may be a mono(meth)acrylate, a di(meth)acrylate, a tri(meth)acrylate, a tetra(meth)acrylate, or the like having a substituted or unsubstituted C1-C20 (carbon number 1-20) alkyl group, a substituted or unsubstituted C1-C20 alkylsilyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C1-C20 alkylene group, an amino group, an ethyleneoxy group, or the like.

[0079] Specifically, the (meth)acrylate monomers without an aromatic hydrocarbon group may include: unsaturated carboxylic acid esters of (meth)acrylates such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, hexyl (meth)acrylate, octyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, and cyclohexyl (meth)acrylate; unsaturated carboxylic acid aminoalkyl esters such as 2-aminoethyl (meth)acrylate and 2-dimethylaminoethyl (meth)acrylate; saturated or unsaturated carboxylic acid vinyl esters such as vinyl acetate; cyanide vinyl compounds such as (meth)acrylonitrile; unsaturated amide compounds such as (meth)acrylamide; ethylene glycol di(meth)acrylate ) acrylate, triethylene glycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, octanediol di(meth)acrylate, nonanediol di(meth)acrylate, decanediol di(meth)acrylate, undecanediol di(meth)acrylate, dodecanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol di(meth)acrylate, dipentaerythritol tri(meth)acrylate, dipentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate or a mixture thereof, but is not limited thereto.

[0080] In one example of the present invention, the photocurable monomer (A) may be a non-aromatic monomer containing no aromatic group and may include at least any one of a mono(meth)acrylate having an alkyl group having 1 to 20 carbon atoms, a mono(meth)acrylate having an amino group, a di(meth)acrylate having a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms, a di(meth)acrylate having an ethyleneoxy group, a tri(meth)acrylate having an ethyleneoxy group, a mono(meth)acrylate having a cyclic carbonized alkyl group, and a di(meth)acrylate.

[0081] The mono(meth)acrylate having a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms may specifically be decyl(meth)acrylate, undecyl(meth)acrylate, lauryl(meth)acrylate, tridecyl(meth)acrylate, tetradecyl(meth)acrylate, pentadecyl(meth)acrylate, hexadecyl(meth)acrylate, heptadecyl(meth)acrylate, octadecyl(meth)acrylate, nonadecyl(meth)acrylate, eicosyl(meth)acrylate, or a mixture thereof, but is not limited thereto.

[0082] The mono(meth)acrylate having an amine group may be 2-aminoethyl(meth)acrylate, 2-dimethylaminoethyl(meth)acrylate, or a mixture thereof, but is not limited thereto.

[0083] The di(meth)acrylate having a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms may be, for example, a di(meth)acrylate having an alkylene group having 1 to 20 carbon atoms, or a non-silicon-based di(meth)acrylate containing a substituted or unsubstituted long-chain alkylene group.

[0084] The di(meth)acrylate having a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms may be, for example, octanediol di(meth)acrylate, nonanediol di(meth)acrylate, decanediol di(meth)acrylate, undecanediol di(meth)acrylate, dodecanediol di(meth)acrylate or a mixture thereof, but is not limited thereto.

[0085] When the (meth)acrylate having a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms is contained, the encapsulating composition of the present invention can further increase the photocuring rate and reduce the viscosity.

[0086] The di(meth)acrylate or tri(meth)acrylate having an ethyleneoxy group may specifically be ethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, or a mixture thereof, but is not limited thereto.

[0087] The mono(meth)acrylate and di(meth)acrylate having a cyclic carbonized alkyl group may specifically be isobornyl(meth)acrylate, tricyclodecane dimethanol di(meth)acrylate, dicyclopentyl(meth)acrylate, dicyclopentenyloxyethyl(meth)acrylate, and dicyclopentenyl(meth)acrylate, but are not limited thereto.

[0088] The photocurable monomer (A) is preferably contained in an amount of 55 to 95% by mass, more preferably 60 to 90% by mass, relative to the total mass of the photocurable monomers (photocurable monomer (A) and photocurable monomer (B)). By being within the above range, the viscosity of the encapsulating composition of the present invention is suitable for forming an encapsulating film for an electronic device.

[0089] <Photocurable monomer (B) having an aromatic hydrocarbon group>

[0090] The above-mentioned photocurable monomer (B) having an aromatic hydrocarbon group (hereinafter, also referred to as "photocurable monomer (B)") has a structure represented by the following general formula (1) and contains two or more phenyl groups and hetero atoms, and the above-mentioned photocurable monomer (B) contains at least mono(meth)acrylate or di(meth)acrylate.

[0091] General formula (1)

[0092]

[0093] [In the above general formula (1), P represents a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, or a heteroatom-containing hydrocarbon group containing two or more substituted or unsubstituted phenyl groups. 1 and Z 2 Each independently has a structure represented by the following general formula (2). a and b are each an integer of 0 to 2, and a+b is an integer of 1 to 4.]

[0094] General formula (2)

[0095]

[0096] [In the above general formula (2), * represents a linking portion to the carbon of P. X represents a single bond, O or S. Y represents a substituted or unsubstituted linear alkylene group having 1 to 10 carbon atoms, or a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms. R 1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. c is an integer of 0 or 1.]

[0097] In the above general formula (1), P represents a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, or a heteroatom-containing hydrocarbon group containing two or more substituted or unsubstituted phenyl groups.

[0098] The above-mentioned hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, or the hydrocarbon group containing heteroatoms containing two or more substituted or unsubstituted phenyl groups refers to a hydrocarbon group formed by connecting the two or more substituted or unsubstituted phenyl groups by a single bond, an oxygen atom, a sulfur atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, an alkylene group having 3 to 6 carbon atoms substituted or unsubstituted by a heteroatom, a vinylene group, an ethynylene group or a carbonyl group when the two or more substituted or unsubstituted phenyl groups are not condensed.

[0099] For example, the hydrocarbon group containing two or more phenyl groups or the heteroatom-containing hydrocarbon group containing two or more phenyl groups may include substituted or unsubstituted biphenyl, substituted or unsubstituted triphenylmethyl, substituted or unsubstituted terphenyl, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenylene, substituted or unsubstituted quaterphenylene, substituted or unsubstituted 2-phenyl-2-(phenylthio)ethyl, substituted or unsubstituted 2,2-diphenylpropyl, substituted or unsubstituted diphenylmethane, substituted or unsubstituted cumylphenyl, substituted or unsubstituted bisphenol F group, substituted or unsubstituted bisphenol A group, substituted or unsubstituted biphenyloxy, substituted or unsubstituted terphenyloxy, substituted or unsubstituted quaterphenyloxy, substituted or unsubstituted pentphenyloxy and structural isomers thereof, but are not limited thereto.

[0100] The monomer having two or more substituted or unsubstituted phenyl groups may be a mono(meth)acrylate, a di(meth)acrylate or a mixture thereof, and examples thereof include 4-(meth)acryloyloxy-2-hydroxybenzophenone, 3,3-diphenylethyl(meth)acrylate, benzoyloxyphenyl(meth)acrylate, bisphenol A di(meth)acrylate, epoxidized bisphenol A di(meth)acrylate, bisphenol F di(meth)acrylate, epoxidized bisphenol F di(meth)acrylate, 4-cumylphenoxyethyl acrylate, epoxidized bisphenylfluorene diacrylate, 2-phenylphenoxyethyl(meth)acrylate, 2,2'-phenylphenoxyethyl di(meth)acrylate, 2-phenylphenoxypropyl(meth)acrylate, 2,2'-phenylphenoxypropyl di(meth)acrylate, 2-phenylphenoxybutyl(meth)acrylate, 2,2'-phenylphenoxybutyl di(meth)acrylate, 2-(3-phenylphenyl)-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1,2-diphenyl-1 )ethyl (meth)acrylate, 2-(4-benzylphenyl)ethyl (meth)acrylate, 2-phenyl-2-(phenylthio)ethyl (meth)acrylate, 2-(triphenylmethoxy)ethyl (meth)acrylate, 4-(triphenylmethoxy)butyl (meth)acrylate, 3-(biphenyl-2-yloxy)butyl (meth)acrylate, 2-(biphenyl-2-yloxy)butyl (meth)acrylate, 4-(biphenyl-2-yloxy)propyl (meth)acrylate, 3-(biphenyl-2-yloxy)butyl The present invention may include, but is not limited to, 2-(biphenyl-2-yloxy)propyl (meth)acrylate, 2-(biphenyl-2-yloxy)propyl (meth)acrylate, 4-(biphenyl-2-yloxy)ethyl (meth)acrylate, 3-(biphenyl-2-yloxy)ethyl (meth)acrylate, 2-(4-benzylphenyl)ethyl (meth)acrylate, 4,4'-bis(acryloyloxymethyl)biphenyl, 2,2'-bis(2-acryloyloxyethoxy)biphenyl, structural isomers thereof, or mixtures thereof.

[0101] In addition, the (meth)acrylate mentioned in the present invention is just an example and is not limited thereto.

[0102] In addition, the present invention includes all acrylates having structural isomer relationships. For example, even if only 2,2'-phenylphenoxyethyl di(meth)acrylate is mentioned as an example of the present invention, the present invention also includes all 3,2'-phenylphenoxyethyl di(meth)acrylate, 3,3'-phenylphenoxyethyl di(meth)acrylate, etc. belonging to the structural isomer.

[0103] In one example of the present invention, the monomer having two or more phenyl groups may be a mono(meth)acrylate represented by the following general formula (4).

[0104] General formula (4)

[0105]

[0106] In the above general formula (4), R 2 is hydrogen or methyl, R 3 is a substituted or unsubstituted linear alkylene group having 1 to 10 carbon atoms, or a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms, R 4 It is a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, or a heteroatom-containing hydrocarbon group containing two or more substituted or unsubstituted phenyl groups.

[0107] For example, the above-mentioned hydrocarbon group containing two or more substituted or unsubstituted phenyl groups or the hydrocarbon group containing heteroatoms containing two or more substituted or unsubstituted phenyl groups refers to a hydrocarbon group formed by connecting the two or more substituted or unsubstituted phenyl groups by a single bond, an oxygen atom, a sulfur atom, a substituted or unsubstituted alkyl group having 1 to 3 carbon atoms, an alkylene group having 3 to 6 carbon atoms substituted or unsubstituted by a heteroatom, a vinylene group, an ethynylene group or a carbonyl group when the two or more substituted or unsubstituted phenyl groups are not condensed.

[0108] For example, the above-mentioned hydrocarbon group containing two or more substituted or unsubstituted phenyl groups or the heteroatom-containing hydrocarbon group containing two or more substituted or unsubstituted phenyl groups may include substituted or unsubstituted biphenyl, substituted or unsubstituted triphenylmethyl, substituted or unsubstituted terphenyl, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenylene, substituted or unsubstituted quaterphenylene, substituted or unsubstituted 2-phenyl-2-(phenylthio)ethyl, substituted or unsubstituted 2,2-diphenylpropyl, substituted or unsubstituted diphenylmethane, substituted or unsubstituted cumylphenyl, substituted or unsubstituted bisphenol F group, substituted or unsubstituted bisphenol A group, substituted or unsubstituted biphenyloxy, substituted or unsubstituted terphenyloxy, substituted or unsubstituted quaterphenyloxy, substituted or unsubstituted pentphenyloxy, etc., but are not limited thereto.

[0109] In one example of the present invention, the monomer having two or more phenyl groups may be a di(meth)acrylate represented by the following general formula (5).

[0110] General formula (5)

[0111]

[0112] In the above general formula (5), R 5 , R 9 are each independently hydrogen or methyl, R 6 , R 8 are each independently a substituted or unsubstituted linear alkylene group having 1 to 10 carbon atoms, or a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms, 7 It is a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, or a heteroatom-containing hydrocarbon group containing two or more substituted or unsubstituted phenyl groups.

[0113] For example, the above-mentioned hydrocarbon group containing two or more substituted or unsubstituted phenyl groups or the hydrocarbon group containing heteroatoms containing two or more substituted or unsubstituted phenyl groups refers to a hydrocarbon group formed by connecting the two or more substituted or unsubstituted phenyl groups by a single bond, an oxygen atom, a sulfur atom, a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms, an alkylene group having 3 to 6 carbon atoms substituted or unsubstituted by a heteroatom, a vinylene group, an ethynylene group or a carbonyl group when the two or more substituted or unsubstituted phenyl groups are not condensed.

[0114] For example, the hydrocarbon group may include substituted or unsubstituted biphenyl group, substituted or unsubstituted triphenylmethylene group, substituted or unsubstituted terphenylene group, substituted or unsubstituted quaterphenylene group, 2-phenyl-2-(phenylthio)ethylene group, 2,2-diphenylpropylene group, diphenylmethylene group, etc., but is not limited thereto.

[0115] In the above general formula (1), a and b are integers of 0 to 2 respectively, and a+b is an integer of 1 to 4. In one example, a+b is an integer of 1 or 2.

[0116] The weight average molecular weight of the monomer having two or more substituted or unsubstituted phenyl groups is preferably in the range of 100 to 1000 g / mol, more preferably in the range of 130 to 700 g / mol, and particularly preferably in the range of 150 to 600 g / mol.

[0117] When the content is within the above range, a packaging film having a higher transmittance can be provided.

[0118] The photocurable monomer (B) having an aromatic hydrocarbon group is preferably contained in an amount within a range of 5 to 45% by mass, more preferably within a range of 10 to 40% by mass, relative to the total mass of the photocurable monomers (photocurable monomer (A) and photocurable monomer (B)). By being within the above range, the viscosity is made suitable for forming a packaging film.

[0119] <Metal-containing compounds (C)>

[0120] The metal-containing compound (C) is selected from metal alkoxide compounds, metal chelates, silane compounds, silazane compounds and metal halide compounds. Examples of the metal M constituting the metal-containing compound (C) include Ti, Si, Al, Zr, silicon, bismuth, strontium, calcium, copper, sodium and lithium. In addition, examples include cesium, magnesium, barium, vanadium, niobium, chromium, tantalum, tungsten, chromium, indium and iron. At least one of Ti, Si, Al and Zr is particularly preferred.

[0121] Specific examples of the metal-containing compound (C) are shown below, but the invention is not limited thereto.

[0122] For example, tetrachlorosilane, methyltrichlorosilane, dimethyldichlorosilane, trimethylchlorosilane, phenyltrichlorosilane, methyltrimethoxysilane, dimethyldimethoxysilane, phenyltrimethoxysilane, tetraethoxysilane, methyltriethoxysilane, dimethyldiethoxysilane, phenyltriethoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, hexyltrimethoxysilane, hexyltriethoxysilane, decyltrimethoxysilane, decyltrimethoxysilane, Trifluoropropyltrimethoxysilane, hexamethyldisilazane, perhydropolysilazane, methylpolysilazane, vinyltrimethoxysilane, vinyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-phenylenediyltrimethoxysilane, 3-methylpropyl Acryloyloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, N-2-(aminoethyl)-3-aminopropyltriethoxysilane , 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-chloropropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, bis(triethoxysilylpropyl)tetrasulfide, 3-isocyanatepropyltriethoxysilane, tetraisocyanatesilane, methyltriisocyanatesilane and other silane compounds.

[0123] Alternatively, organic titanium compounds having structures represented by the following general formulae (II) to (IV) can be mentioned. In the following general formulae, R represents an alkyl group.

[0124] General formula (II)

[0125] Titanium alkoxide

[0126]

[0127] General formula (III)

[0128] Titanium acylate

[0129]

[0130] General formula (IV)

[0131]

[0132] In addition, organic titanium compounds such as tetra-2-ethylhexyl titanium, diisopropoxybis(acetylacetonate)titanium, tetraacetylacetonate titanium, dioctyloxybis(octanediol)titanium, diisopropoxybis(ethyl acetoacetate)titanium, diisopropoxybis(triethanolamine)titanium, lactic acid titanium amine salt, lactic acid titanium, lactic acid titanium, and polyhydroxystearate titanium can be mentioned.

[0133] Alternatively, organic zirconium compounds having structures represented by the following general formulae (V) to (VII) are exemplified. In the following general formulae, R represents an alkyl group.

[0134] General formula (V)

[0135] Zirconium alkoxide

[0136]

[0137] General formula (VI)

[0138] Zirconium acylate

[0139]

[0140] General formula (VII)

[0141] Zirconium complex

[0142]

[0143] In addition, organic zirconium compounds such as zirconium tetra-n-propoxide, zirconium tetra-n-butoxide, zirconium tetraacetylacetonate, zirconium tributoxymonoacetylacetonate, zirconium monobutoxyacetylacetonate bis(ethyl acetoacetate), zirconium dibutoxybis(ethyl acetoacetate), zirconium tetraacetylacetonate, and zirconium tributoxymonostearate may be mentioned.

[0144] In addition, organic aluminum compounds such as aluminum sec-butoxide, aluminum isopropoxide, aluminum mono-sec-butoxydiisopropoxide, aluminum ethoxide, aluminum ethyl acetoacetate diisopropoxide, aluminum acetylacetonate (III), aluminum monoacetylacetonate bis (ethyl acetoacetate), aluminum monoethyl acetoacetate di-n-butoxyaluminum, and aluminum monomethyl acetoacetate diisopropoxy are exemplified.

[0145] Other examples include metal halide compounds such as titanium dichloride, titanium trichloride, titanium tetrachloride, titanium fluoride, zirconium chloride, zirconium fluoride, aluminum chloride, and aluminum fluoride.

[0146] As commercially available products of the metal-containing compound (C), tetrakis(2-ethylhexyl)titanate (product name TA30, manufactured by Matsumoto Fine Chemical Co., Ltd.), aluminum sec-butoxide (manufactured by Kawaken Fine Chemical Co., Ltd.), isopropoxyaluminum epoxide (manufactured by Kawaken Fine Chemical Co., Ltd.), titanium chelate octanediol (product name TC201, manufactured by Matsumoto Fine Chemical Co., Ltd.), diisopropoxybis(ethyl acetoacetate)titanium (product name TC750, manufactured by Matsumoto Fine Chemical Co., Ltd.), n-butyl zirconate (product name ZA65, manufactured by Matsumoto Fine Chemical Co., Ltd.), zirconium tetraacetylacetonate (product name ZC150, manufactured by Matsumoto Fine Chemical Co., Ltd.), perhydropolysilazane (product name NN120, manufactured by AZ Co., Ltd.), organopolysilazane (チルポリシラザン, product name AQUAMICA LExp MHPS-20DB, manufactured by AZ Co., Ltd.), 3-aminopropyltrimethoxysilane (product name KBM-903, manufactured by Shin-Etsu Chemical Co., Ltd.).

[0147] The content of the metal-containing compound (C) relative to the entire encapsulating composition is not limited as long as the function of photocuring the encapsulating composition is maintained, but is preferably in the range of 0.1 to 15 mass %, more preferably in the range of 5 to 10 mass %.

[0148] The metal-containing compound (C) may be partially converted into an oxide or hydroxide having a metal M. From the viewpoint of transparency, the molar fraction of the oxide or hydroxide of the metal M relative to the metal-containing compound (C) is preferably in the range of 0.01 to 0.1 [mol / mol].

[0149] <Photopolymerization initiator>

[0150] The photopolymerization initiator is not particularly limited as long as it is a common photopolymerization initiator capable of undergoing a photocurable reaction.

[0151] As the photopolymerization initiator, for example, a triazine-based, acetophenone-based, benzophenone-based, thioxanthone-based, benzoin-based, phosphorus-based, oxime-based, or a mixture thereof may be contained.

[0152] The triazine initiator can be 2,4,6-trichloro-s-triazine, 2-phenyl-4,6-bis(trichloromethyl)-s-triazine, 2-(3',4'-dimethoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4'-methoxynaphthalene)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-tolyl)-4,6-bis(trichloromethyl)-s-triazine, s-triazine, 2-biphenyl-4,6-bis(trichloromethyl)-s-triazine, bis(trichloromethyl)-6-phenylvinyl-s-triazine, 2-(naphthalene-1-yl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4-methoxynaphthalene-1-yl)-4,6-bis(trichloromethyl)-s-triazine, 2,4-trichloromethyl(piperonyl)-6-triazine, 2,4-(trichloromethyl(4'-methoxyphenylvinyl)-6-triazine or a mixture thereof.

[0153] The acetophenone-based initiator may be 2,2'-diethoxyacetophenone, 2,2'-dibutoxyacetophenone, 2-hydroxy-2-methylpropiophenone, p-tert-butyltrichloroacetophenone, p-tert-butyldichloroacetophenone, 4-chloroacetophenone, 2,2'-dichloro-4-phenoxyacetophenone, 2-methyl-1-(4-(methylthio)phenyl)-2-morpholinopropane-1-one, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butane-1-one and a mixture thereof.

[0154] The benzophenone-based initiator may be benzophenone, benzoylbenzoic acid, methyl benzoylbenzoate, 4-phenylbenzophenone, hydroxybenzophenone, propylene oxide benzophenone, 4,4'-bis(dimethylamino)benzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-2-methoxybenzophenone or a mixture thereof.

[0155] The thioxanthone-based initiator may be thioxanthone, 2-methylthioxanthone, isopropylthioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, 2-chlorothioxanthone or a mixture thereof.

[0156] The benzoin-based initiator may be benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl dimethyl ketal or a mixture thereof.

[0157] The phosphorus-based initiator may be bisbenzoylphenylphosphine oxide, benzoyldiphenylphosphine oxide or a mixture thereof.

[0158] The oxime may be 2-(o-benzoyloxime)-1-[4-(phenylthio)phenyl]-1,2-octanedione and 1-(o-acetoxiime)-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]ethanone, or a mixture thereof.

[0159] The photopolymerization initiator is preferably contained in the encapsulation composition of the present invention in an amount of about 0.1 to 20 parts by mass relative to 100 parts by mass of the total of the photocurable monomer (photocurable monomer (A), photocurable monomer (B)) and the photopolymerization initiator. By being within the above range, photopolymerization can be sufficiently initiated during exposure, and a decrease in transmittance due to residual unreacted initiator after photopolymerization can be prevented.

[0160] Specifically, the photopolymerization initiator is preferably contained in an amount within a range of 0.5 to 10 parts by mass, more specifically 1 to 8 parts by mass.

[0161] In addition, the photopolymerization initiator is preferably contained in the encapsulating composition of the present invention in an amount of 0.1 to 10% by mass, more preferably 0.1 to 8% by mass, based on the solid content. By being within the above range, photopolymerization can be sufficiently initiated, and a decrease in transmittance due to residual unreacted initiator can be prevented.

[0162] In place of the above-mentioned photopolymerization initiator, a photoacid generator or a photopolymerization initiator such as a carbazole-based, diketone-based, sulfonium-based, iodonium-based, diazo-based, or biimidazole-based photoacid generator or a photopolymerization initiator may be used.

[0163] <Other additives>

[0164] The encapsulation composition of the present invention may further include other components including antioxidants, heat stabilizers, photosensitizers, dispersants, thermal crosslinking agents and surfactants within the scope of obtaining the effects of the present invention. These components may be included in the encapsulation composition of the present invention only one, or two or more.

[0165] The above antioxidant can improve the thermal stability of the encapsulation layer. The antioxidant may include one or more selected from phenol, quinone, amine and phosphite, but is not limited thereto. For example, as an antioxidant, tetrakis[methylene(3,5-di-tert-butyl-4-hydroxyphenyl)propionate]methane, tris(2,4-di-tert-butylphenyl)phosphite, etc. may be cited.

[0166] The antioxidant is preferably contained in the encapsulating composition in an amount of 0.01 to 3 parts by mass, more preferably 0.01 to 1 part by mass, based on 100 parts by mass of the total of the photocurable monomer and the photopolymerization initiator. Within the above range, excellent thermal stability can be exhibited.

[0167] The heat stabilizer is contained in the encapsulating composition to suppress the change in viscosity of the encapsulating composition at room temperature, and any common heat stabilizer can be used without limitation.

[0168] For example, as the heat stabilizer, a sterically hindered phenolic heat stabilizer can be used, specifically, poly(dicyclopentadiene-co-p-cresol), octadecyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl) propionate, 2,6-di-tert-butyl-4-methylphenol, 2,2'-methylenebis(4-methyl-6-tert-butylphenol), 6,6'-di-tert-butyl-2,2'-dithio-p-cresol, tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl) isocyanurate, triethylene glycol-bis(3-tert-butyl-4-hydroxy-5-methylphenyl), 4,4'-thiobis(6-tert-butyl-m-cresol), 3,3' -bis(3,5-di-tert-butyl-4-hydroxyphenyl)-N,N'-hexamethylene-bisacetonamide, pentaerythritol tetrakis(3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate), 3,5-di-tert-butyl-4-hydroxyphenylpropionate stearyl, pentaerythritol tetrakis-1,3,5-tris(2,6-dimethyl-3-hydroxy-4-tert-butyl-benzyl)isocyanurate, 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)isocyanurate, 1,3,5-tris(2-hydroxyethyl)isocyanurate-tris(3,5-di-tert-butylhydroxyphenylpropionate), but the present invention is not limited thereto.

[0169] The thermal stabilizer is contained in the encapsulating composition in an amount of 2000 ppm or less, preferably in a range of 0.01 to 2000 ppm, and more preferably in a range of 100 to 1000 ppm, based on the solid content relative to the total of the photocurable monomer and the photopolymerization initiator. By being within the above range, the thermal stabilizer can improve the storage stability and processability of the encapsulating composition in a liquid state.

[0170] The photosensitizer has a function of transferring absorbed light energy to a photopolymerization initiator, and is therefore a compound that can have the original photopolymerization initiator function even when the photopolymerization initiator used does not have absorption corresponding to light from a light source.

[0171] Examples of the photosensitizer include anthracene derivatives such as 9,10-dibutoxyanthracene; benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether and other benzoin derivatives;

[0172] Benzophenone derivatives such as benzoylbenzoic acid methyl ester, 4-phenylbenzophenone, 4-benzoyl-4'-methyl-diphenyl sulfide, 3,3',4,4'-tetrakis(tert-butylperoxycarbonyl)benzophenone, 2,4,6-trimethylbenzophenone, 4-benzoyl-N,N-dimethyl-N-[2-(1-oxo-2-acryloyloxy)ethyl]benzyl ammonium bromide, and (4-benzoylbenzyl)trimethylammonium chloride;

[0173] Thioxanthone derivatives such as 2-isopropylthioxanthone, 4-isopropylthioxanthone, 2,4-diethylthioxanthone, 2,4-dichlorothioxanthone, 1-chloro-4-propoxythioxanthone, 2-(3-dimethylamino-2-hydroxy)-3,4-dimethyl-9H-thioxanthone-9-one meso chloride; and other compounds. Among them, anthracene derivatives, benzoin derivatives, benzophenone derivatives, anthraquinone derivatives, and thioxanthone derivatives are preferably used.

[0174] <Ultraviolet curing>

[0175] The encapsulation composition of the present invention is preferably 10 to 500 mW / cm 2 The film is cured by irradiating ultraviolet rays for 1 to 100 seconds in a range of , but is not limited to this.

[0176] As ultraviolet rays, from the viewpoint of preventing degradation of electronic devices, it is preferable to use a 395 nm LED.

[0177] <Physical Properties>

[0178] From the viewpoint of further improving the dischargeability from the nozzle, the viscosity of the encapsulating composition of the present invention is preferably in the range of 3 to 20 mPa·s. From the viewpoint of further improving the dischargeability from the nozzle, the surface tension is preferably 15 mN / m or more and less than 45 mN / m.

[0179] The viscosity of the encapsulating composition of the present invention can be determined, for example, by measuring the temperature change of the dynamic viscoelasticity of the encapsulating composition using various rheometers.

[0180] In the present invention, their viscosity is a value obtained by the following method. The encapsulation composition of the present invention is placed in a stress-controlled rheometer Physica MCR300 (cone plate diameter: 75 mm, cone angle: 1.0°, manufactured by Anton Paar). Then, the encapsulation composition is heated to 100°C, and cooled to 20°C under the conditions of a cooling rate of 0.1°C / s, a strain of 5%, and an angular frequency of 10 radian / s to obtain a temperature change curve of dynamic viscoelasticity.

[0181] The encapsulating composition of the present invention may contain pigment particles. From the viewpoint of further improving the ejection property from the nozzle, the average particle size of the pigment particles when the encapsulating composition of the present invention contains a pigment is in the range of 0.08 to 0.5 μm, and the maximum particle size is preferably in the range of 0.3 to 10 μm.

[0182] The average particle size of the pigment particles in the present invention refers to the value obtained by the dynamic light scattering method using Zetasizer Nano ZSP (manufactured by Malvern). It should be noted that the concentration of the encapsulating composition containing the coloring material is high, and light cannot pass through the measuring instrument, so the encapsulating composition is diluted 200 times before measurement. The measurement temperature is room temperature (25°C).

[0183] In addition, from the viewpoint of inkjet ejection properties and stabilization of droplets during ink flight, the density ρ of the encapsulating composition of the present invention, the surface tension σ of the encapsulating composition, the viscosity μ of the encapsulating composition, the nozzle diameter D 0 The Ohnesorg number (Oh) represented by the following formula 1 is in the range of 0.1 to 1.

[0184]

[0185] The encapsulation composition of the present invention is preferably prepared to provide a cured polymer having a Tg (glass transition temperature) of 80° C. or higher in the film after polymerization. From the viewpoint of ensuring stability in the formation process, driving temperature, and reliability test of electronic devices, the Tg of the film after polymerization is preferably 80° C. or higher.

[0186] [Method for forming an electronic device encapsulation film]

[0187] The method for forming an electronic device encapsulation film of the present invention is a method for forming an encapsulation film using the electronic device encapsulation composition of the present invention, comprising: a step of forming a first encapsulation layer on an electronic device by a vapor phase method, and a step of forming a second encapsulation layer by coating the electronic device encapsulation composition on the first encapsulation layer.

[0188] In order to further improve the sealing performance of the electronic device, it is preferable to include a step of forming a third sealing layer on the second sealing layer by a vapor phase method.

[0189] <First Encapsulation Layer Formation Process>

[0190] In the first encapsulation layer forming process, a first encapsulation layer is formed on the electronic device by a vapor phase method.

[0191] As the gas phase method, there can be mentioned a sputtering method (for example, including magnetron cathode sputtering, planar magnetron sputtering, two-pole AC planar magnetron sputtering, two-pole AC rotating magnetron sputtering, etc., reactive sputtering method), a vapor deposition method (for example, resistance heating vapor deposition, electron beam vapor deposition, ion beam vapor deposition, plasma assisted vapor deposition, etc.), a thermal CVD method, a catalytic chemical vapor deposition method (Cat-CVD), a capacitively coupled plasma CVD method (CCP-CVD), a photo CVD method, a plasma CVD method (PE-CVD), an epitaxial growth method, a chemical vapor deposition method such as an atomic layer deposition method (ALD), etc. Among them, formation by an ALD method and a CVD method is preferred.

[0192] The first encapsulation layer contains silicon nitride (SiN), silicon oxide (silicon monoxide, silicon dioxide, etc.), or silicon oxynitride.

[0193] The thickness of the first encapsulation layer is, for example, preferably in the range of 10 to 1000 nm, more preferably in the range of 100 to 500 nm.

[0194] <Second Encapsulation Layer Formation Process>

[0195] In the second encapsulating layer forming process, the second encapsulating layer is formed by applying the encapsulating composition of the present invention onto the first encapsulating layer.

[0196] Specifically, the method may include a step of coating the encapsulating composition on the first encapsulating layer (coating step), and irradiating the obtained coating film with vacuum ultraviolet rays in a nitrogen atmosphere to perform a modification treatment.

[0197] (Coating process)

[0198] As a coating method for the encapsulation composition, any appropriate method can be adopted, for example, spin coating, roll coating, flow coating, inkjet, spray coating, printing, dip coating, cast film forming, rod coating, gravure printing, etc. Among them, the inkjet method is preferably used in terms of being able to perform fine patterning required when encapsulating electronic devices such as organic EL elements as needed.

[0199] As the inkjet method, a known method can be used.

[0200] The inkjet method is roughly divided into two types: the drop-on-demand method and the continuous method, and either method can be used. As the drop-on-demand method, there are electro-mechanical conversion methods (for example, single-chamber type, dual-chamber type, bend (bender) type, piston type, shared module type, shared wall type, etc.), electro-thermal conversion methods (for example, thermal inkjet type, BUBBLEJET (Japanese registered trademark) type, etc.), electrostatic attraction methods (for example, electric field control type, slit jet type, etc.) and discharge methods (for example, electric spark jet type, etc.). From the perspective of the cost and productivity of the nozzle, it is preferred to use a nozzle of an electro-mechanical conversion method or an electro-thermal conversion method. It should be noted that the method of dripping droplets (for example, coating liquid) according to the inkjet method is sometimes called "inkjet method".

[0201] The encapsulating composition is preferably applied under a nitrogen atmosphere.

[0202] (Reforming process)

[0203] The modification step may include a step of irradiating the obtained coating film with vacuum ultraviolet rays in a nitrogen atmosphere to perform modification after the coating step.

[0204] The modification treatment refers to a conversion reaction of polysilazane into silicon oxide or silicon oxynitride. The modification treatment is also performed in a nitrogen atmosphere and under reduced pressure as in a glove box.

[0205] The modification treatment in the present invention can be selected from a known method based on the conversion reaction of polysilazane. In the present invention, it is preferred to use a conversion reaction of plasma, ozone, or ultraviolet light that can perform the conversion reaction at low temperature. Plasma and ozone can use a conventionally known method. In the present invention, it is preferred to form the second encapsulation layer of the present invention by providing the above-mentioned coating film and irradiating vacuum ultraviolet light (also referred to as VUV) with a wavelength of less than 200nm for modification treatment.

[0206] The thickness of the second encapsulating layer is preferably in the range of 0.5 to 20 μm, more preferably in the range of 3 to 10 μm.

[0207] The second encapsulating layer may be a layer in which the entire layer is modified. The thickness of the modified layer after the modification treatment is preferably in the range of 1 to 50 nm, and more preferably in the range of 1 to 30 nm.

[0208] In the step of irradiating the coating film with vacuum ultraviolet rays for modification, the illuminance of the vacuum ultraviolet rays on the coating film surface is preferably 30 to 200 mW / cm 2 The range of 50 to 160 mW / cm 2 By making the illuminance of vacuum ultraviolet light 30mW / cm 2Above, the reforming efficiency can be fully improved, at 200mW / cm 2 When the ratio is less than 0.1%, the occurrence rate of damage on the coating film can be extremely suppressed, and damage to the substrate can also be reduced, which is preferred.

[0209] In the irradiation of vacuum ultraviolet rays, the irradiation energy of vacuum ultraviolet rays on the coating film surface is preferably 1 to 10 J / cm 2 In the range of 3 to 7 J / cm2, from the viewpoint of the barrier property and moisture heat resistance for maintaining the dehumidification function, the 2 within the range.

[0210] It should be noted that as the light source of vacuum ultraviolet light, it is preferred to use a rare gas excimer lamp. Since vacuum ultraviolet light is easily reduced in efficiency in the vacuum ultraviolet light irradiation process due to the presence of oxygen-based absorption, the irradiation of vacuum ultraviolet light is preferably carried out in a state of oxygen concentration as low as possible. That is, the oxygen concentration during vacuum ultraviolet light irradiation is preferably in the range of 10 to 10000ppm, more preferably in the range of 50 to 5000ppm, further preferably in the range of 80 to 4500ppm, and most preferably in the range of 100 to 1000ppm.

[0211] The modification treatment may also be combined with the heat treatment. By using the temperature in the range of preferably 50 to 300° C., more preferably 60 to 150° C., and preferably 1 second to 60 minutes, more preferably 10 seconds to 10 minutes as the heating conditions, the dehydration condensation reaction during the modification can be promoted, and the modified body can be formed more effectively.

[0212] As the heat treatment, for example, there are no particular limitations on the method of heating the coating film by contacting a heating element such as a substrate heating block with the coating film to heat the coating film by heat conduction, a method of heating the atmosphere by using an external heater based on a resistance wire or the like, a method of using light in the infrared region such as an IR heater, etc. In addition, a method that can maintain the smoothness of the coating film containing the silicon compound can be appropriately selected.

[0213] <Third Encapsulation Layer Formation Process>

[0214] The third encapsulation layer forming process forms the third encapsulation layer on the second encapsulation layer by using a vapor phase method.

[0215] As the gas phase method, similar to the gas phase method used in the first encapsulation layer formation process, there can be mentioned a sputtering method (for example, magnetron cathode sputtering, planar magnetron sputtering, two-pole AC planar magnetron sputtering, two-pole AC rotating magnetron sputtering, etc., including reactive sputtering), a vapor deposition method (for example, resistance heating vapor deposition, electron beam vapor deposition, ion beam vapor deposition, plasma assisted vapor deposition, etc.), a thermal CVD method, a catalytic chemical vapor deposition method (Cat-CVD), a capacitively coupled plasma CVD method (CCP-CVD), a photo CVD method, a plasma CVD method (PE-CVD), an epitaxial growth method, a chemical vapor deposition method such as an atomic layer deposition method (ALD), etc. Among them, formation by an ALD method or a CVD method is preferred.

[0216] The third encapsulation layer contains silicon nitride (SiN), silicon oxide (silicon monoxide, silicon dioxide, etc.), or silicon oxynitride.

[0217] The thickness of the third encapsulation layer is, for example, preferably in the range of 10 to 1000 nm, more preferably in the range of 100 to 500 nm.

[0218] It should be noted that after the package film is formed as described above, a conductive film for a touch sensor may be further formed.

[0219] The conductive film may be composed of a graphite film having excellent flexibility, a metal nanowire film (e.g., a film containing silver nanowires or copper nanowires), or a metal nanoparticle film (e.g., a film containing silver nanoparticles or copper nanoparticles), in addition to a metal compound film such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). In addition, the conductive film may be composed of a laminated film of multiple metals such as Al film / Ti film / Al film.

[0220] [Electronic equipment packaging film]

[0221] The electronic device encapsulating film of the present invention is an electronic device encapsulating film for encapsulating electronic devices, and comprises a first encapsulating layer containing silicon nitride, silicon oxide or silicon oxynitride and a second encapsulating layer obtained using the electronic device encapsulating composition of the present invention.

[0222] The electronic device encapsulating film of the present invention is formed by the above-mentioned electronic device encapsulating film forming method. That is, the second encapsulating layer is formed using the above-mentioned electronic device encapsulating composition of the present invention.

[0223] In addition, the electronic device encapsulating film of the present invention preferably further comprises a third encapsulating layer containing silicon nitride, silicon oxide, or silicon oxynitride on the second encapsulating layer.

[0224] <1st packaging layer>

[0225] The first encapsulation layer is a layer formed on the electronic device by a vapor phase method and specifically contains silicon nitride (SiN), silicon oxide (silicon monoxide, silicon dioxide, etc.), or silicon oxynitride.

[0226] <Second Encapsulation Layer>

[0227] The second encapsulating layer is provided adjacent to the first encapsulating layer, and is formed by applying the encapsulating composition onto the first encapsulating layer.

[0228] Therefore, the second encapsulating layer contains a polymer having a structure represented by the following general formula (3A) and the following general formula (3B), and the above-mentioned metal-containing compound (C).

[0229]

[0230] [In the above general formula (3A) and the above general formula (3B), R 1 represents a hydrogen atom or a methyl group. A is a structure without an aromatic hydrocarbon group. B has an aromatic hydrocarbon group, has a structure represented by the above general formula (1) and contains a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, or a hydrocarbon group containing a heteroatom containing two or more substituted or unsubstituted phenyl groups, and contains at least a mono(meth)acrylate or a di(meth)acrylate.]

[0231] In the above general formula (3A) and the above general formula (3B), R 1 represents a hydrogen atom or a methyl group.

[0232] In the above general formula (3A) and general formula (3B), A is a structure without an aromatic hydrocarbon group. That is, it has the same meaning as the above photocurable monomer (A), does not contain an aromatic hydrocarbon group, and may contain a monomer having 1 to 20, specifically 1 to 6, selected from vinyl, acrylic and methacrylic groups as photocurable functional groups, for example, 1 to 3, 1 to 2, 1 or 2.

[0233] In the above general formula (3A) and general formula (3B), B is a structure having an aromatic hydrocarbon group. That is, it has the same meaning as the above photocurable monomer (B), has an aromatic hydrocarbon group, has a structure represented by the above general formula (1), contains two or more phenyl groups and heteroatoms, and contains at least mono(meth)acrylate or di(meth)acrylate.

[0234] As a method for detecting that the above-mentioned second packaging layer contains a polymer having a structure represented by the above-mentioned general formula (3A) and general formula (3B), and the above-mentioned metal-containing compound (C), various previously known analytical methods can be used, such as chromatography, infrared spectrophotometry, ultraviolet-visible spectrophotometry, nuclear magnetic resonance, X-ray diffraction and mass spectrometry, X-ray photoelectron spectroscopy, etc.

[0235] The content of the metal-containing compound (C) in the second sealing layer is preferably in the range of 0.1 to 15% by mass, more preferably in the range of 5 to 10% by mass.

[0236] In addition, the metal-containing compound (C) in the second encapsulating layer may be partially converted into an oxide or hydroxide having a metal M. From the viewpoint of transparency, the molar fraction of the oxide or hydroxide of the metal M relative to the metal-containing compound (C) is preferably in the range of 0.01 to 0.1 [mol / mol].

[0237] <Third Encapsulation Layer>

[0238] The third encapsulation layer is provided adjacent to the second encapsulation layer and is formed by the above-mentioned vapor phase method. Specifically, it contains silicon nitride (SiN), silicon oxide (silicon monoxide, silicon dioxide, etc.) or silicon oxynitride, similarly to the first encapsulation layer.

[0239] [Electronic equipment]

[0240] In the electronic device encapsulation film forming method and the electronic device encapsulation film of the present invention, as encapsulated electronic devices, for example, organic EL elements, LED elements, liquid crystal display elements (LCD), thin film transistors, touch panels, electronic paper, solar cells (PV), etc. can be cited. From the viewpoint of more effectively obtaining the effect of the present invention, organic EL elements, solar cells or LED elements are preferred, and organic EL elements are particularly preferred.

[0241] <Organic EL devices>

[0242] The organic EL element used in the electronic device of the present invention may be a bottom emission type organic EL element that extracts light from a transparent substrate side.

[0243] The bottom emission type is specifically constituted by laminating a transparent electrode as a cathode, a light emitting functional layer, and a counter electrode as an anode in this order on a transparent substrate.

[0244] The organic EL element of the present invention may be a top emission type organic EL element in which light is extracted from a transparent electrode side serving as a cathode opposite to a substrate.

[0245] Specifically, the top emission type has a structure in which a counter electrode as an anode is provided on the substrate side, and a light-emitting functional layer and a transparent electrode as a cathode are sequentially stacked on the surface thereof.

[0246] A typical example of the structure of an organic EL element is shown below.

[0247] (i) Anode / Hole injection and transport layer / Emitting layer / Electron injection and transport layer / Cathode

[0248] (ii) Anode / hole injection and transport layer / light-emitting layer / hole blocking layer / electron injection and transport layer / cathode

[0249] (iii) Anode / hole injection and transport layer / electron blocking layer / light-emitting layer / hole blocking layer / electron injection and transport layer / cathode

[0250] (iv) Anode / hole injection layer / hole transport layer / light-emitting layer / electron transport layer / electron injection layer / cathode

[0251] (v) Anode / hole injection layer / hole transport layer / light-emitting layer / hole blocking layer / electron transport layer / electron injection layer / cathode

[0252] (vi) anode / hole injection layer / hole transport layer / electron blocking layer / light-emitting layer / hole blocking layer / electron transport layer / electron injection layer / cathode

[0253] Furthermore, the organic EL element may have a non-luminescent intermediate layer. The intermediate layer may be a charge generating layer or may be composed of a multiphoton unit.

[0254] As an overview of the organic EL element applicable to the present invention, for example, Japanese Patent Application Laid-Open No. 2013-157634, Japanese Patent Application Laid-Open No. 2013-168552, Japanese Patent Application Laid-Open No. 2013-177361, Japanese Patent Application Laid-Open No. 2013-187211, Japanese Patent Application Laid-Open No. 2013-191644, Japanese Patent Application Laid-Open No. 2013-191804, Japanese Patent Application Laid-Open No. 2013-225678, Japanese Patent Application Laid-Open No. 2013-235994, Japanese Patent Application Laid-Open No. 2013-24 The configurations described in Japanese Patent Application Publication No. 3234, Japanese Patent Application Publication No. 2013-243236, Japanese Patent Application Publication No. 2013-242366, Japanese Patent Application Publication No. 2013-243371, Japanese Patent Application Publication No. 2013-245179, Japanese Patent Application Publication No. 2014-003249, Japanese Patent Application Publication No. 2014-003299, Japanese Patent Application Publication No. 2014-013910, Japanese Patent Application Publication No. 2014-017493, Japanese Patent Application Publication No. 2014-017494, etc.

[0255] <Base material>

[0256] As a base material (hereinafter also referred to as supporting substrate, base, substrate, support, etc.) that can be used in the above-mentioned organic EL element, specifically, glass or a resin film is preferably used. When flexibility is required, a resin film is preferably used.

[0257] In addition, it may be transparent or opaque. In the case of a so-called bottom emission type in which light is extracted from the substrate side, the substrate is preferably transparent.

[0258] Preferred resins include polyester resins, methacrylic resins, methacrylic acid-maleic acid copolymers, polystyrene resins, transparent fluorine resins, polyimides, fluorinated polyimide resins, polyamide resins, polyamide-imide resins, polyether-imide resins, cellulose acylate resins, polyurethane resins, polyether-ether-ketone resins, polycarbonate resins, alicyclic polyolefin resins, polyarylate resins, polyethersulfone resins, polysulfone resins, cycloolefin copolymers, fluorene ring-modified polycarbonate resins, alicyclic-modified polycarbonate resins, fluorene ring-modified polyester resins, acrylic compounds and other thermoplastic resins. The resins may be used alone or in combination of two or more.

[0259] The substrate is preferably made of a heat-resistant material. Specifically, a substrate having a linear expansion coefficient of 15 ppm / K to 100 ppm / K and a glass transition temperature (Tg) of 100° C. to 300° C. can be used.

[0260] The substrate meets the necessary conditions for use in electronic components and as a laminated film for displays. That is, when the encapsulation film of the present invention is used in these applications, the substrate is sometimes exposed to a process above 150°C. In this case, if the linear expansion coefficient of the substrate exceeds 100ppm / K, the substrate size is unstable when flowing through the process at the temperature described above, and it is easy to produce the undesirable situation of deterioration of insulation performance or the undesirable situation of not being able to withstand the heat process accompanied by thermal expansion and contraction. When it is less than 15ppm / K, the film will crack like glass, and there is a situation where the flexibility is deteriorated.

[0261] The Tg and linear expansion coefficient of the substrate can be adjusted by using additives and the like.

[0262] More preferred specific examples of thermoplastic resins that can be used as the substrate include polyethylene terephthalate (PET: 70°C), polyethylene naphthalate (PEN: 120°C), polycarbonate (PC: 140°C), alicyclic polyolefins (e.g., ZEONOR (registered trademark) 1600 manufactured by Zeon Corporation: 160°C), polyarylates (PAr: 210°C), polyether sulfone (PES: 220°C), polysulfone (PSF: 190°C), cycloolefin copolymers (COC: described in Japanese Patent Application Publication No. 2001-150584). The temperature of the polyimide is 250°C, 250°C, 20 ...

[0263] Since the electronic device of the present invention is an electronic device such as an organic EL element, the substrate is preferably transparent. That is, the light transmittance is usually 80% or more, preferably 85% or more, and more preferably 90% or more. The light transmittance can be calculated by subtracting the scattered light transmittance from the total light transmittance by measuring the total light transmittance and the amount of scattered light using an integrating sphere light transmittance measuring device according to JIS K7105:1981.

[0264] In addition, the substrates mentioned above may be unstretched films or stretched films. The substrates may be manufactured by conventionally known general methods. The manufacturing methods of these substrates may adopt the matters described in paragraphs

[0051] to

[0055] of International Publication No. 2013 / 002026.

[0265] The surface of the substrate may be subjected to various known treatments for improving adhesion, such as corona discharge treatment, flame treatment, oxidation treatment or plasma treatment, or the above treatments may be combined as required. In addition, the substrate may be subjected to an easy-adhesion treatment.

[0266] The substrate may be a single layer or a laminated structure of two or more layers. When the substrate has a laminated structure of two or more layers, each substrate may be of the same type or of different types.

[0267] The thickness of the substrate of the present invention (the total thickness in the case of a laminated structure of two or more layers) is preferably 10 to 200 μm, more preferably 20 to 150 μm.

[0268] In the case of a film substrate, a film substrate with a gas barrier layer is preferred.

[0269] The gas barrier layer for the film substrate may be formed as an inorganic film, an organic film, or a hybrid film of the two on the surface of the film substrate, and preferably has a water vapor transmission rate (25±0.5°C, relative humidity (90±2)% RH) of 0.01 g / m 2 The barrier film with a shelf life of 24 hours or less is more preferably an oxygen permeability of 1×10 －3 mL / m 2 ·24h·atm or less, water vapor transmission rate is 1×10 －3 g / m 2 ·High gas barrier film for less than 24 hours.

[0270] The gas barrier layer may be formed of any material as long as it has the function of suppressing the infiltration of substances such as moisture and oxygen that cause element degradation. For example, silicon monoxide, silicon dioxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, etc. can be used.

[0271] The gas barrier layer is not particularly limited. For example, in the case of an inorganic gas barrier layer of silicon monoxide, silicon dioxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, etc., it is preferred to form a layer of the inorganic material by using a sputtering method (for example, magnetron cathode sputtering, planar magnetron sputtering, diode AC planar magnetron sputtering, diode AC rotary magnetron sputtering, etc.), a vapor deposition method (for example, resistance heating vapor deposition, electron beam vapor deposition, ion beam vapor deposition, plasma assisted vapor deposition, etc.), a thermal CVD method, a catalytic chemical vapor deposition method (Cat-CVD), a capacitively coupled plasma CVD method (CCP-CVD), a photoCVD method, a plasma CVD method (PE-CVD), an epitaxial growth method, an atomic layer deposition (ALD) method, a reactive sputtering method, and other chemical vapor deposition methods.

[0272] In addition, the inorganic gas barrier layer can also be formed by applying a coating liquid containing an inorganic precursor such as polysilazane, tetraethyl orthosilicate (TEOS) on a support and then performing a modification treatment such as irradiation with vacuum ultraviolet light to form an inorganic gas barrier layer, or by film metallization technology such as plating a metal on a resin substrate to bond a metal foil to the resin substrate.

[0273] In addition, the inorganic gas barrier layer may include an organic layer containing an organic polymer. In other words, the inorganic gas barrier layer may be a laminate of an inorganic layer containing an inorganic material and an organic layer.

[0274] The organic layer can be formed, for example, by coating an organic monomer or an organic oligomer on a resin substrate to form a layer, followed by polymerization and crosslinking as required using, for example, an electron beam device, a UV light source, a discharge device or other appropriate device. In addition, for example, it can also be formed by evaporating an organic monomer or an organic oligomer that can be flash-evaporated and radiation-crosslinked and then forming a polymer from the organic monomer or organic oligomer. The coating efficiency can be improved by cooling the resin substrate.

[0275] As the coating method of organic monomer or organic oligomer, for example, roll coating method (for example, gravure roll coating method), spray coating method (for example, electrostatic spray coating method) etc. can be enumerated. In addition, as the example of the laminate of inorganic layer and organic layer, for example, the laminate of record in International Publication No. 2012 / 003198 and International Publication No. 2011 / 013341 etc. can be enumerated.

[0276] In the case of a laminate of an inorganic layer and an organic layer, the thickness of each layer may be the same or different. The thickness of the inorganic layer is preferably in the range of 3 to 1000 nm, more preferably in the range of 10 to 300 nm. The thickness of the organic layer is preferably in the range of 100 nm to 100 μm, more preferably in the range of 1 to 50 μm.

[0277] Example

[0278] The present invention is specifically described below with reference to examples, but the present invention is not limited thereto. It should be noted that in the following examples, unless otherwise specified, the operation is performed at room temperature (25° C.). In addition, unless otherwise specified, “%” and “parts” represent “mass %” and “mass parts”, respectively.

[0279] [Preparation of Encapsulating Compositions 1-1 to 1-78, 2-1 to 2-3, and 2-5 to 2-8]

[0280] The monomer (A) and the monomer (B) were weighed under a nitrogen atmosphere so as to have the types and mass parts shown in the following Tables I to IV.

[0281] Furthermore, 5 parts by mass of a phosphorus-based initiator (IRGACURE TPO manufactured by BASF) as a photopolymerization initiator, 0.5 parts by mass of 2-isopropylthioxanthone (manufactured by Merck) as a sensitizer, and 0.1 parts by mass of IRGASTAB UV10 (manufactured by BASF) as a stabilizer were put into a brown bottle and stirred on a hot plate at 65° C. for 3 hours.

[0282] Furthermore, a metal-containing compound (C) was added so as to have the types and mass parts shown in Tables I to IV below, and the mixture was stirred for 1 hour to obtain encapsulating compositions 1-1 to 1-78, 2-1 to 2-3, and 2-5 to 2-8.

[0283] However, as the metal-containing compound (C), c8 and c9 were used those obtained by removing dibutyl ether in advance by heating under reduced pressure using an evaporator.

[0284] [Preparation of Encapsulating Composition 2-4]

[0285] Polysilazane (NL-120: manufactured by CLARIANT Japan Co., Ltd.) having a concentration of 20% by mass was used as encapsulating composition 2-4.

[0286] <Single substance (A)>

[0287] a1: triethylene glycol diacrylate (manufactured by SARTOMER)

[0288] a2: Isoamyl acrylate (manufactured by Kyoeisha Chemical Co., Ltd.)

[0289] a3: Isobornyl acrylate (manufactured by Kyoeisha Chemical Co., Ltd.)

[0290] a4: Dicyclopentanyl acrylate (manufactured by Tokyo Chemical Industry Co., Ltd.)

[0291] a5: 1,10-decanediol diacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd.)

[0292] a6: triethylene glycol dimethacrylate (manufactured by BASF)

[0293] a7: Lauryl acrylate (manufactured by SARTOMER)

[0294] a8: dimethylaminopropyl acrylamide (manufactured by Tokyo Chemical Industry Co., Ltd.)

[0295] a9: EO modified trimethylolpropane triacrylate (manufactured by Daiichi Kogyo Seiyaku Co., Ltd.)

[0296]

[0297] a2

[0298]

[0299] a3

[0300]

[0301] a4

[0302]

[0303] a5

[0304]

[0305] a6

[0306]

[0307] a7

[0308]

[0309] a8

[0310]

[0311] a9

[0312]

[0313] <Monomer (B)>

[0314] b1: 2-phenylphenoxyethyl acrylate (manufactured by Shin-Nakamura Chemical Co., Ltd.)

[0315] b2: (3-phenoxyphenyl)methyl 2-propenoate (manufactured by Kyoeisha Chemical Co., Ltd.)

[0316] b3: The following compound X

[0317] b4: The following compound Y

[0318] b1

[0319]

[0320] b2

[0321]

[0322] b3: Compound X

[0323]

[0324] b4: Compound Y

[0325]

[0326] In addition, the said compound X and the said compound Y were synthesized by the method shown below.

[0327] (Synthesis of Compound X)

[0328] A 2000 ml flask equipped with a cooling tube and a stirrer was filled with 800 ml of acetonitrile (Fischer Co., Ltd.), and 150 g of 4,4'-bis(chloromethyl)biphenyl (Tokyo Chemical Industry Co., Ltd.) was slowly added while 180 g of potassium carbonate (Sigma-Aldrich Co., Ltd.) and 108 g of acrylic acid were stirred at 0°C. The temperature was raised to 70°C, and the mixture was stirred for 12 hours. After the acetonitrile was distilled off under reduced pressure, 177 g of the above-mentioned compound X was obtained by passing through a silica gel column with an HPLC purity of 97%.

[0329] (Synthesis of Compound Y)

[0330] 300 ml of dichloromethane (Sigma-Aldrich Co., Ltd.), 200 g of 4-hydroxybutyl acrylate (Shin-Nakamura Chemical Industry Co., Ltd.) and 168 g of triethylamine were placed in a 3000 ml reactor equipped with a cooling tube and a stirrer, and after the temperature in the flask was lowered to 0°C, a solution prepared by dissolving 278 g of p-toluene sulfonyl chloride (Sigma-Aldrich Co., Ltd.) in 500 ml of dichloromethane was added dropwise over 2 hours while stirring. After further stirring for 5 hours, the residual solvent was distilled off. 300 g of the obtained compound was added to 1000 ml of acetonitrile (Sigma-Aldrich Co., Ltd.), and 220 g of potassium carbonate (Sigma-Aldrich Co., Ltd.) and 141 g of 2-phenylphonol (Sigma-Aldrich Co., Ltd.) were added and stirred at 80° C. The residual solvent and the reaction residue were removed to obtain the above-mentioned compound Y (molecular weight 296.36) with an HPLC purity of 93%.

[0331] <Metal-containing compounds (C)>

[0332] c1: Tetra(2-ethylhexyl) titanate (product name TA30, manufactured by Matsumoto Fine Chemical Co., Ltd.)

[0333] c2: Aluminum sec-butoxide (manufactured by Kawakami Fine Chemicals Co., Ltd.)

[0334] c3: Isopropyl epoxide aluminum (manufactured by Kawakami Fine Chemicals Co., Ltd.)

[0335] c4: Titanium chelate octanediol (product name TC201, manufactured by Matsumoto Fine Chemical Co., Ltd.)

[0336] c5: diisopropoxybis(ethyl acetoacetate)titanium (product name TC750, manufactured by Matsumoto Fine Chemical Co., Ltd.)

[0337] c6: n-butyl zirconate (product name ZA65, manufactured by Matsumoto Fine Chemical Co., Ltd.)

[0338] c7: Zirconium tetraacetylacetonate (product name ZC150, manufactured by Matsumoto Fine Chemical Co., Ltd.)

[0339] c8: Perhydropolysilazane (product name NN120, manufactured by AZ)

[0340] c9: Methyl polysilazane (product name AQAMIKA LExp MHPS-20DB, manufactured by AZ)

[0341] c10: 3-aminopropyltrimethoxysilane (product name KBM-903, manufactured by Shin-Etsu Chemical Co., Ltd.)

[0342] C11: Titanium 4 chloride (manufactured by Wako Pure Chemical Industries, Ltd.)

[0343] <Production of Organic EL Element 1-1>

[0344] (1) Preparation of substrate

[0345] A 15 μm thick polyimide film was prepared as a film substrate. Furthermore, a gas barrier layer (SiO 2 Film: 250nm / SiNx Film: 50nm / SiO 2 Film: 500 nm (upper layer / middle layer / lower layer)) is formed on the polyimide film.

[0346] (2) Formation of the first electrode

[0347] An Al film was formed as a first electrode (metal layer) on one surface of the substrate under the following conditions. The thickness of the formed first electrode was 150 nm. The thickness of the first electrode was a value measured by a contact-type surface profile measuring instrument (DECTAK).

[0348] The Al film was deposited using a vacuum evaporation device with a vacuum degree of 1×10 －4 Pa was formed using a tungsten resistance heating crucible.

[0349] (3) Formation of organic EL layer

[0350] First, the materials shown below constituting each layer of the organic functional layer are filled into each evaporation crucible in a vacuum evaporation device in an amount optimal for producing a device. The evaporation crucible is made of a resistance heating material made of molybdenum or tungsten.

[0351] (3-1) Formation of Hole Injection Layer

[0352] Reduce the pressure to a vacuum degree of 1×10 －4 After Pa, the following compound A-1 was placed in a deposition crucible and heated by electricity, and was deposited on the first electrode (metal layer side) at a deposition rate of 0.1 nm / sec to form a hole injection layer with a thickness of 10 nm.

[0353] (3-2) Formation of hole transport layer

[0354] Next, the following compound M-2 was placed in a deposition crucible and electrically heated, and was deposited on the hole injection layer at a deposition rate of 0.1 nm / sec to form a hole transport layer with a thickness of 30 nm.

[0355] (3-3) Formation of Light Emitting Layer

[0356] Next, the following compound BD-1 and the following compound H-1 were co-deposited at a deposition rate of 0.1 nm / sec so that the concentration of compound BD-1 was 7 mass %, thereby forming a 15 nm thick light-emitting layer (fluorescent light-emitting layer) that emitted blue light.

[0357] Next, the following compounds GD-1, RD-1 and H-2 were co-deposited at a deposition rate of 0.1 nm / sec to form a yellow light-emitting layer (phosphorescent light-emitting layer) with a thickness of 15 nm so that the concentrations of compound GD-1 were 20% by mass and RD-1 were 0.5% by mass.

[0358] (3-4) Formation of electron transport layer

[0359] Then, a heating boat loaded with the following compound T-1 as an electron transport material was energized, and Alq 3 An electron transport layer composed of (tris(8-hydroxyquinoline)) was formed on the light-emitting layer. At this time, the deposition rate was set within a range of 0.1 to 0.2 nm / sec and the thickness was set to 30 nm.

[0360] (3-5) Formation of electron injection layer (metal affinity layer)

[0361] Next, a heating boat containing the following compound I-1 as an electron injection material was electrically heated to form an electron injection layer formed of Liq on the electron transport layer. At this time, the evaporation rate was set within the range of 0.01 to 0.02 nm / sec and the thickness was set to 2 nm. It should be noted that the electron injection layer functions as a metal affinity layer.

[0362] Thus, an organic EL layer emitting white light is formed.

[0363]

[0364] (4) Formation of the Second Electrode

[0365] Furthermore, a Mg / Ag mixture (Mg:Ag=1:9 (vol ratio)) was vapor-deposited to a thickness of 10 nm to form the extraction electrode as the second electrode.

[0366] (5) Formation of the capping layer

[0367] Then, it was moved to the original vacuum chamber, and α-NPD (4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl) was vapor-deposited on the second electrode at a vapor deposition rate of 0.1 to 0.2 nm / sec to a thickness of 40 nm to form a cover layer for the purpose of improving light extraction.

[0368] (6) Formation of the first encapsulation layer

[0369] Next, silicon nitride (SiN, Vickers hardness HV900) was formed to a thickness of 500 nm by plasma CVD as a first sealing layer covering the light emitting portion of the organic EL element produced above.

[0370] (7) Formation of the Second Encapsulation Layer

[0371] Next, the encapsulation composition 1-1 prepared above was filled into the cartridge-integrated nozzle of the inkjet device under a nitrogen atmosphere. Then, the encapsulation composition 1-1 was applied to the organic EL element formed to the first encapsulation layer using an inkjet method under a nitrogen atmosphere. Then, a 395nm air-cooled LED (manufactured by Phoseon Technology) was used to emit only 1J / cm 2 The accumulated energy of the UV was irradiated to form a second encapsulation layer. The thickness of the second encapsulation layer was set by adjusting the number of inkjet coatings, and the second encapsulation layer of the following two thicknesses was formed.

[0372] ·3.3μm (1 coating)

[0373] 10μm (3 coats)

[0374] (8) Formation of the third encapsulation layer

[0375] Next, silicon nitride (SiN, Vickers hardness HV900) was formed as a third encapsulating layer with a thickness of 500 nm on the second encapsulating layer by a plasma CVD method, thereby obtaining an organic EL element 1 - 1 for evaluation having the first to third encapsulating layers formed thereon.

[0376] <Production of organic EL elements 1-2 to 1-78, 2-1 to 2-3, and 2-5 to 2-8>

[0377] In the preparation of the organic EL element 1-1, except that the encapsulating composition 1-1 in forming the second encapsulating layer was changed as shown in the following table, organic EL elements 1-2 to 1-78, 2-1 to 2-3, and 2-5 to 2-8 for evaluation were prepared in the same manner.

[0378] <Production of organic EL element 2-4>

[0379] In the formation of the second encapsulation layer in the preparation of the organic EL element 1-1, the encapsulation composition 1-1 was changed to the encapsulation composition 2-4, and the encapsulation composition 2-4 was applied on the first encapsulation layer using a spin coater with a rotation speed of 500 rpm, and then dried at a temperature of 90° C. for 30 minutes using a hot plate. These coating and drying were repeated to form the second encapsulation layer with two thicknesses of 3.3 μm and 10 μm.

[0380] In addition, regarding the application by inkjet, the vapor pressure and viscosity of the liquid of the encapsulating composition 2-4 were in the range unsuitable for inkjet, and thus it could not be discharged.

[0381]

[0382]

[0383]

[0384]

[0385] [evaluate]

[0386] <Packaging performance (reliability)>

[0387] The organic EL elements to be evaluated are placed in a constant temperature and humidity chamber under high temperature and high humidity (temperature 85°C, relative humidity 85%) for accelerated degradation test. Each organic EL element is taken out from the constant temperature and humidity chamber at each constant time and made to emit light at room temperature to confirm the presence or absence of black spots (DS) during accelerated degradation at 85°C 85%. The time until the area ratio of black spots in the luminous area reaches 0.5% is defined as the lifespan, and the lifespan is evaluated. The longer the lifespan, the higher the packaging performance. Levels 3 to 5 of the following evaluation criteria are evaluated as qualified.

[0388] (Evaluation Criteria)

[0389] Level 1: Lifespan less than 50 hours

[0390] Level 2: Lifespan of more than 50 hours and less than 100 hours

[0391] Level 3: Lifespan of more than 100 hours and less than 300 hours

[0392] Level 4: Lifespan of more than 300 hours and less than 500 hours

[0393] Level 5: Lifespan of more than 500 hours

[0394] <Bending resistance>

[0395] Each organic EL element 1-1 to 1-67 and 2-1 to 2-7 was wound around a metal roller with a diameter of 10 mm and placed in a constant temperature and humidity chamber under high temperature and high humidity (temperature 60°C, relative humidity 90%) for accelerated degradation test. At this time, the polyimide film as a film substrate was wound in contact with the metal roller. After 1500 hours, each organic EL element was taken out of the constant temperature and humidity chamber and confirmed under a microscope and the luminous state (black spot area ratio) at room temperature. Grades 3 to 5 of the following evaluation criteria were evaluated as qualified.

[0396] (Evaluation Criteria)

[0397] Level 1: Delamination of encapsulation layer or non-luminescence

[0398] Level 2: Black spot area ratio is 1% or more

[0399] Level 3: Black spot area ratio is 0.5% or more and less than 1%

[0400] Level 4: Black spot area ratio is 0.1% or more and less than 0.5%

[0401] Level 5: Black spot area ratio is less than 0.1%

[0402] <Luminescence characteristics>

[0403] The light emission characteristics were evaluated by comparing with the light emission efficiency of an organic EL element for comparison.

[0404] An organic EL element for comparison was prepared using alkali-free glass instead of the thin film substrate in the organic EL element produced above.

[0405] In addition, a glass sealing can to which barium oxide was added was used for sealing in a nitrogen atmosphere instead of forming the first sealing layer, the second sealing layer, and the third sealing layer. An ultraviolet curing adhesive was used to bond the sealing can to the substrate of the organic EL element, and the two were bonded by irradiating ultraviolet light to produce a sealing element (organic EL element for comparison).

[0406] The obtained comparative organic EL elements and the organic EL elements 1-1 to 1-67 and 2-1 to 2-7 prepared above were measured by applying 2.5 mA / cm 2 The front emission spectrum at a constant current was used to evaluate the luminous efficiency (lm / W).

[0407] The measurement was performed using a spectroradiometer CS-1000 (manufactured by Konica Minolta Inc.). The ratio of the luminous efficiency of the organic EL elements 1-1 to 1-67 and 2-1 to 2-7 to the luminous efficiency of the comparative organic EL element was evaluated according to the following evaluation criteria. The following levels 3 to 5 were evaluated as acceptable.

[0408] (Evaluation Criteria)

[0409] Level 1: Luminous efficiency is below 90%

[0410] Level 2: greater than 90% and less than 100%

[0411] Level 3: greater than 100% and less than 110%

[0412] Level 4: greater than 110% and less than 120%

[0413] Level 5: greater than 120%

[0414] [Table 5]

[0415] Table V

[0416]

[0417] [Table 6]

[0418] Table VI

[0419]

[0420] [Table 7]

[0421] Table VII

[0422]

[0423] [Table 8]

[0424] VIII

[0425]

[0426] The above results show that the organic EL element having an encapsulating layer formed thereon using the encapsulating composition of the present invention has higher encapsulation performance and better bending resistance than the organic EL element of the comparative example, and furthermore, is superior in luminous efficiency.

[0427] Industrial Applicability

[0428] The present invention can be used for an electronic device encapsulation composition, an electronic device encapsulation film forming method, and an electronic device encapsulation film that can prevent moisture permeation, has excellent encapsulation performance and excellent bending resistance, and can improve luminous efficiency.

Claims

1. A composition for encapsulating electronic devices, comprising a photocurable monomer and a photopolymerization initiator, The photocurable monomers include: a photocurable monomer A having no aromatic hydrocarbon group and a photocurable monomer B having an aromatic hydrocarbon group. The photocurable monomer B has a structure represented by the following general formula (1), comprising a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups or a hydrocarbon group containing a heteroatom containing two or more substituted or unsubstituted phenyl groups, and The photocurable monomer B at least comprises mono(meth)acrylate or di(meth)acrylate, Furthermore, the electronic device encapsulating composition further comprises a metal-containing compound C selected from metal alkoxide compounds, metal chelates and metal halide compounds, wherein the content of the metal-containing compound C relative to the entire electronic device encapsulating composition is in the range of 0.1 to 15 mass %, and the metal M constituting the metal-containing compound C is at least any one of Ti, Al and Zr. General formula (1) In the general formula (1), P represents a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, or a heteroatom-containing hydrocarbon group containing two or more substituted or unsubstituted phenyl groups, and Z 1 and Z 2 Each independently has a structure represented by the following general formula (2), a and b are each an integer from 0 to 2, and a+b is an integer from 1 to 4, General formula (2) In the general formula (2), * represents a linking portion to the carbon of P, X represents a single bond, O or S, Y represents a substituted or unsubstituted straight-chain alkylene group having 1 to 10 carbon atoms, or a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms, and R 1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and c is an integer of 0 or 1.

2. The composition for encapsulating electronic devices according to claim 1, wherein The photocurable monomer A is at least one selected from mono(meth)acrylates having an amino group, di(meth)acrylates having a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms, di(meth)acrylates having an ethyleneoxy group, tri(meth)acrylates having an ethyleneoxy group, and mono(meth)acrylates and di(meth)acrylates having a cyclic carbonized alkyl group.

3. The composition for encapsulating electronic devices according to claim 1 or 2, wherein: The photocurable monomer B) is 4-(meth)acryloyloxy-2-hydroxybenzophenone, 3,3-diphenylethyl (meth)acrylate, benzoyloxyphenyl (meth)acrylate, bisphenol A di(meth)acrylate, epoxidized bisphenol A di(meth)acrylate, 2-phenylphenoxyethyl (meth)acrylate, 2,2'-phenylphenoxyethyl di(meth)acrylate, 2-phenylphenoxypropyl (meth)acrylate, 2,2'-phenylphenoxypropyl di(meth)acrylate, 2-phenylphenoxybutyl (meth)acrylate, 2,2'-phenylphenoxybutyl di(meth)acrylate, 2-(3-phenylphenyl)ethyl (meth)acrylate, 2-(4-benzylphenyl)ethyl (meth)acrylate, 2-phenyl-2-(phenylthio)ethyl (meth)acrylate, and 2-(methylphenyl)-2-(phenylthio)ethyl (meth)acrylate. any of 2-(triphenylmethoxy)ethyl (meth)acrylate, 4-(triphenylmethoxy)butyl (meth)acrylate, 3-(biphenyl-2-yloxy)butyl (meth)acrylate, 2-(biphenyl-2-yloxy)butyl (meth)acrylate, 4-(biphenyl-2-yloxy)propyl (meth)acrylate, 3-(biphenyl-2-yloxy)propyl (meth)acrylate, 2-(biphenyl-2-yloxy)propyl (meth)acrylate, 4-(biphenyl-2-yloxy)ethyl (meth)acrylate, 3-(biphenyl-2-yloxy)ethyl (meth)acrylate, 2-(4-benzylphenyl)ethyl (meth)acrylate, 4,4'-bis(acryloyloxymethyl)biphenyl, 2,2'-bis(2-acryloyloxyethoxy)biphenyl, and any of their structural isomers or mixtures thereof.

4. A method for forming an electronic device encapsulation film, comprising forming an encapsulation film using the electronic device encapsulation composition according to any one of claims 1 to 3, comprising: The process of forming a first encapsulation layer on the electronic device by a vapor phase method, and A step of forming a second encapsulating layer by applying the electronic device encapsulating composition on the first encapsulating layer.

5. The method for forming an electronic device packaging film according to claim 4, wherein: The method further comprises forming a third encapsulating layer on the second encapsulating layer by a vapor phase method.

6. The method for forming an electronic device packaging film according to claim 4 or 5, wherein: The step of forming the second encapsulation layer uses an inkjet method.

7. An electronic device packaging film, used for packaging electronic devices, having: a first encapsulation layer comprising silicon nitride, silicon oxide or silicon oxynitride, and A second encapsulating layer obtained by using the electronic device encapsulating composition according to any one of claims 1 to 3.

8. The electronic device packaging film according to claim 7, wherein: The second encapsulation layer contains: a polymer having a structure represented by the following general formula (3A) and the following general formula (3B), and the metal-containing compound C. General formula (3A) General formula (3B) In the general formula (3A) and the general formula (3B), R1 represents a hydrogen atom or a methyl group; A is a structure without an aromatic hydrocarbon group; B has an aromatic hydrocarbon group, has a structure represented by the general formula (1), contains a hydrocarbon group containing two or more substituted or unsubstituted phenyl groups or a hydrocarbon group containing heteroatoms containing two or more substituted or unsubstituted phenyl groups, and contains at least a mono(meth)acrylate or a di(meth)acrylate.

9. The electronic device packaging film according to claim 7 or 8, wherein: A third encapsulation layer containing silicon nitride, silicon oxide or silicon oxynitride is provided on the second encapsulation layer.

10. The electronic device packaging film according to claim 7 or 8, wherein: The content of the metal-containing compound C in the second encapsulating layer is in the range of 0.1 to 15 mass %.

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