An apparatus and method for manufacturing ceramic-based copper clad plate

Abstract

The application provides a device and method for preparing ceramic-based copper-clad plate, and belongs to the technical field of ceramic substrates. The device provided by the application realizes micro-reduction of the surface of the ceramic substrate by using a Kaufman ion source device, realizes injection of metal elements by using a high-energy ion beam device, forms a ceramic-metal mixed layer by the ceramic matrix and the injected metal atoms, simultaneously forms a transition layer by using a low-energy ion beam device, the ceramic-metal mixed layer has good bonding force with the ceramic substrate layer and the transition layer, thereby improving the bonding force between the ceramic substrate and the copper film layer deposited by the subsequent high-pulse low-energy ion beam device, and enhancing the anti-peeling strength of the copper film layer. The device provided by the application can solve the problem that the traditional copper cladding technology cannot simultaneously meet the high-density ultra-thin copper cladding layer, high peeling strength and low interface roughness of the ceramic-based copper-clad plate, and meet the ceramic-based copper-clad plate with high frequency requirements.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of ceramic circuit board, and particularly relates to a device and method for preparing ceramic-based copper-clad plate. BACKGROUND

[0002] The traditional preparation method of alumina ceramic circuit board is to print a conductive coating on a ceramic plate, and then to bond a copper foil to the surface (single side or double side) of the alumina ceramic substrate at high temperature by using a sintering process. In addition, the existing method also uses physical vapor deposition to prepare the copper-clad layer, and common methods include magnetron sputtering, multi-arc ion plating, and electron beam evaporation. However, the interface roughness of the copper-clad layer prepared by the sintering method is high, and the thinner the copper layer, the higher the cost and the lower the yield. The ion energy of the magnetron sputtering and electron beam evaporation methods is low, so the bonding force with the ceramic substrate is weak. Although the multi-arc ion plating has high energy, the plasma generated thereby has many large particles, and the coating formed thereby has poor density and high roughness. SUMMARY

[0003] The present application aims to provide a device and method for preparing a ceramic-based copper-clad plate, which can simultaneously satisfy the requirements of high-density ultra-thin copper-clad layer, high peeling strength, and low interface roughness.

[0004] In order to achieve the above-mentioned application purposes, the present application provides the following technical solutions:

[0005] The present application provides a device for preparing a ceramic-based copper-clad plate, which comprises a vacuum chamber 101, a Kaufman gas ion source device 102, a high-energy ion beam device 103, a low-energy ion beam device 104, and a high-pulse low-energy ion beam device 105. The Kaufman ion source device 102, the high-energy ion beam device 103, the low-energy ion beam device 104, and the high-pulse low-energy ion beam device 105 are respectively arranged at the four ends of the vacuum chamber 101.

[0006] Preferably, the device further comprises a workpiece disc 106, which is arranged in the vacuum chamber 101.

[0007] The present application provides a method for preparing a ceramic-based copper-clad plate by using the above-mentioned device for preparing a ceramic-based copper-clad plate, which comprises the following steps:

[0008] The Kaufman gas ion source device 102 is used to perform surface reduction on a ceramic substrate arranged in the vacuum chamber 101, to obtain a first treated ceramic substrate;

[0009] The high-energy ion beam device 103 is used to inject metal onto the surface of the first treated ceramic substrate to perform keying, to obtain a second treated ceramic substrate;

[0010] The second ceramic substrate is subjected to first surface deposition by a low-energy ion beam device 104 to form a transition layer;

[0011] The transition layer is subjected to second surface deposition by a high-pulse low-energy ion beam device 105 to form a copper layer, thereby obtaining a ceramic copper-clad plate.

[0012] Preferably, the surface reduction is performed at an argon flow rate of 20-80sccm, a hydrogen flow rate of 0-40sccm, a voltage of 20-40KV, a beam intensity of 1-50mA, and a processing time of 20-60min.

[0013] Preferably, after the surface reduction, the surface roughness of the ceramic substrate changes by ≤0.1μm.

[0014] Preferably, the metal elements for the metal implantation include Ti, Al, Ni, Cr or Cu.

[0015] Preferably, the bonding is performed at a beam intensity of 10-100mA, an energy of 10-40keV, and an implantation dose of 1×(10 15 -10 17 )ions / cm 2 .

[0016] Preferably, the transition layer is formed of Ni and / or Cr, the first surface deposition is performed at an arc current of 60-150A, a bias voltage of 0-300V, a duty cycle of 20-95%, and a deposition thickness of 10-100nm.

[0017] Preferably, the second surface deposition is performed at an arc current of 60-150A, a bias voltage of 0-7kV and not 0, a frequency of 0-200Hz and not 0, and a deposition thickness of 1-9μm.

[0018] Preferably, the ceramic copper-clad plate has a surface roughness of <0.2μm.

[0019] The application provides a device for preparing a ceramic-based copper-clad plate, comprising a vacuum chamber 101, a Kaufman gas ion source device 102, a high-energy ion beam device 103, a low-energy ion beam device 104 and a high-pulse low-energy ion beam device 105; the Kaufman ion source device 102, the high-energy ion beam device 103, the low-energy ion beam device 104 and the high-pulse low-energy ion beam device 105 are respectively distributed at four end portions of the vacuum chamber 101. The device provided by the application realizes micro-reduction of a ceramic substrate surface by using the Kaufman ion source device, realizes metal element injection by using the high-energy ion beam device, forms a ceramic-metal mixed layer by using the low-energy ion beam device, and realizes good bonding force of the ceramic-metal mixed layer with a ceramic substrate layer and a transition layer, thereby improving the bonding force of the ceramic substrate with a copper film layer formed by the subsequent high-pulse low-energy ion beam device, and enhancing the anti-peeling strength of the copper film layer.

[0020] The device provided by the application can not increase the original interface roughness of the ceramic, can maintain the original surface roughness of the ceramic, has low interface roughness, can avoid the skin effect caused by the copper tooth generated by the traditional method, and can reduce the loss in the high-frequency signal transmission process; moreover, the copper-clad plate prepared by the device has low interface roughness and thin copper layer, and can realize the preparation of a fine circuit board with a line width and line distance of less than 15 / 15 microns; the device provided by the application can extract an ion beam spot with a higher ionization rate of more than 90% by using the high-pulse low-energy ion beam device, and thereby obtain a high-density ultra-thin copper layer (copper layer thickness 1-9 microns). Therefore, the device provided by the application can solve the problems that the traditional copper-clad technology cannot simultaneously meet the high-density ultra-thin copper layer, high peeling strength and low interface roughness of the ceramic-based copper-clad plate, and obtain a ceramic-based copper-clad plate meeting the high-frequency requirement. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 A top view of the device for preparing a ceramic-based copper-clad plate according to the application;

[0022] Figure 2 A flow chart for preparing a ceramic-based copper-clad plate according to the application;

[0023] Figure 3 A surface morphology diagram of the ceramic-based copper-clad plate prepared in Example 1;

[0024] Figure 4 A roughness test result diagram of the ceramic-based copper-clad plates prepared in Examples 1-3 and Comparative Examples 1-3;

[0025] Figure 5 A bonding force test result diagram of the ceramic-based copper-clad plates prepared in Examples 1-3 and Comparative Examples 1-3. DETAILED DESCRIPTION

[0026] As Figure 1As shown, the present invention provides an apparatus for preparing ceramic-based copper-clad laminates, including a vacuum chamber 101, a Kaufman gas ion source device 102, a high-energy ion beam device 103, a low-energy ion beam device 104, and a high-pulse low-energy ion beam device 105; the Kaufman ion source device 102, the high-energy ion beam device 103, the low-energy ion beam device 104, and the high-pulse low-energy ion beam device 105 are respectively distributed at the four ends of the vacuum chamber 101.

[0027] In this invention, unless otherwise specified, all required equipment are commercially available equipment well known to those skilled in the art.

[0028] The apparatus for preparing ceramic-based copper-clad laminates provided by the present invention includes a vacuum chamber 101. The present invention utilizes the vacuum chamber 101 to provide a vacuum environment.

[0029] The apparatus for preparing ceramic-based copper-clad laminates provided by this invention includes a Kaufman gas ion source device 102. This invention utilizes the Kaufman gas ion source device 102 to treat the workpiece with Kaufman gas ion source.

[0030] The apparatus for preparing ceramic-based copper-clad laminates provided by this invention includes a high-energy ion beam device 103. This invention utilizes the high-energy ion beam device 103 to perform metal implantation on the workpiece.

[0031] The apparatus for preparing ceramic-based copper-clad laminates provided by the present invention includes a low-energy ion beam device 104. The present invention utilizes the low-energy ion beam device 104 to perform surface deposition on a workpiece.

[0032] The apparatus for preparing ceramic-based copper-clad laminates provided by this invention includes a high-pulse low-energy ion beam device 105. This invention utilizes the high-pulse low-energy ion beam device 105 to perform surface deposition on a workpiece.

[0033] As an embodiment of the present invention, the apparatus for preparing ceramic-based copper-clad laminates provided by the present invention further includes a workpiece tray 106; the workpiece tray 106 is disposed within the vacuum chamber 101. The present invention utilizes the workpiece tray 106 to hold the workpiece to be prepared.

[0034] like Figure 2 As shown, the present invention provides a method for preparing ceramic-based copper-clad laminates using the apparatus described above, comprising the following steps:

[0035] A Kaufman gas ion source device 102 is used to perform surface reduction on a ceramic substrate placed in a vacuum chamber 101 to obtain a first processed ceramic substrate.

[0036] A high-energy ion beam device 103 is used to implant metal onto the surface of the first processed ceramic substrate and perform bonding to obtain a second processed ceramic substrate.

[0037] The low-energy ion beam equipment 104 is used to perform first surface deposition on the second treated ceramic substrate to form a transition layer;

[0038] The high-pulse low-energy ion beam equipment 105 is used to perform second surface deposition on the transition layer to form a copper layer, and a ceramic copper-clad plate is obtained.

[0039] In the present application, the required raw materials for preparation are all commercially available products known to those skilled in the art, unless otherwise specified.

[0040] In the present application, the ceramic substrate is placed in the vacuum chamber 101 and subjected to surface reduction by the Kaufman gas ion source equipment 102 to obtain a first treated ceramic substrate.

[0041] In the present application, the ceramic substrate is preferably an alumina ceramic plate or an aluminum nitride ceramic plate.

[0042] In the present application, the argon flow rate for surface reduction is preferably 20-80 sccm, more preferably 20-60 sccm; the hydrogen flow rate is preferably 0-40 sccm, more preferably 30 sccm; the voltage is preferably 20-40 KV, more preferably 30 kV; the beam intensity is preferably 1-50 mA, more preferably 30 mA; and the treatment time is preferably 20-60 min, more preferably 40 min.

[0043] In the present application, after the surface reduction, the surface roughness change of the ceramic substrate is preferably ≤0.1 μm. The present application cleans the surface dirt of the ceramic substrate by Kaufman gas ion source treatment, breaks the bonds and performs micro-reduction on the surface, activates the surface, and improves the bonding strength.

[0044] After obtaining the first treated ceramic substrate, the present application uses the high-energy ion beam equipment 103 to implant metal on the surface of the first treated ceramic substrate to perform bond breaking, and obtains a second treated ceramic substrate. In the present application, the metal elements used for implanting metal preferably include Ti, Al, Ni, Cr or Cu.

[0045] In the present application, the beam intensity for bond breaking is preferably 10-100 mA, more preferably 20 mA; the energy is preferably 10-40 keV, more preferably 20 keV; and the implantation dose is preferably 1×(10 15 ~10 17 )ions / cm 2 , more preferably 1×10 16 ions / cm 2The present application utilizes high-energy ion beam technology to form a ceramic-metal mixed layer by high-energy bonding of the broken bonds and micro-reduced surface of the ceramic substrate treated by a Kaufman gas ion source, thereby improving the bonding force between the ceramic substrate and the transition layer and the bonding force between the ceramic substrate and the subsequent copper layer. For example, Ni exists in the form of Ni compounds (NiO and NiAl2O4) on the ceramic surface layer.

[0046] After obtaining the second treated ceramic substrate, the present application uses a low-energy ion beam device 104 to perform first surface deposition on the second treated ceramic substrate to form a transition layer. In the present application, the target material used in the first surface deposition is preferably a Ni, Cr or any proportion of NiCr alloy target material; the elements of the transition layer are preferably Ni and / or Cr, and when the elements of the transition layer are Ni and Cr, the present application does not have special limitations on the ratio of Ni and Cr, and any ratio is acceptable; in the embodiment of the present application, the specific NiCr alloy has an atomic mass ratio of 8:2; the arc current of the first surface deposition is preferably 60-150 A, and more preferably 100 A; the bias voltage is preferably 0-300 V, and more preferably 200 V; the duty cycle is preferably 20-95%, and more preferably 90%; and the deposition thickness is preferably 10-100 nm, and more preferably 50-80 nm. The present application uses the transition layer as a connecting layer between the ceramic substrate and the Cu layer, and the transition layer has good bonding force with the Cu layer.

[0047] After forming the transition layer, the present application uses a high-pulse low-energy ion beam device 105 to perform second surface deposition on the transition layer to form a copper layer, thereby obtaining a ceramic-based copper-clad plate.

[0048] In the present application, the target material used in the second surface deposition is preferably a pure copper target material; the arc current of the second surface deposition is preferably 60-150 A, and more preferably 100 A; the bias voltage is preferably 0-7 kV and not 0, and more preferably 5 kV; the frequency is preferably 0-200 Hz and not 0, and more preferably 20-100 Hz; and the deposition thickness is preferably 1-9 μm, and more preferably 3 μm.

[0049] The present application utilizes the high-pulse low-energy ion beam method to reduce the internal stress in the deposition process and thereby reduce warping on the basis of ensuring the density of the copper layer, thereby obtaining high reliability.

[0050] In the present application, the surface roughness of the ceramic-based copper-clad plate is preferably <0.2 μm, and more preferably 0.11-0.19 μm.

[0051] The technical solutions in the present application will be described clearly and completely below in combination with the embodiments in the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work belong to the scope of protection of the present application.

[0052] Embodiment 1

[0053] S1: the surface of the aluminum nitride ceramic substrate is reduced by using a Kaufman gas ion source, argon flow is 60sccm, hydrogen flow is 30sccm, voltage is 30kV, beam intensity is 30mA, and processing time is 40min, to obtain a first processing ceramic substrate;

[0054] S2: the first processing ceramic substrate is implanted with Ni element by using high-energy ion beam technology to perform bonding, beam intensity is 20mA, energy is 20keV, and implantation dose is 1×1016ions / cm2, to obtain a second processing ceramic substrate; 16 ions / cm 2

[0055] S3: a transition layer is deposited on the surface of the second processing ceramic substrate by using low-energy ion beam technology with NiCr (atomic mass ratio is 8:2) alloy as target material, the transition layer is NiCr (atomic mass ratio is 8:2) alloy, arc current is 100A, bias voltage is 200V, duty cycle is 90%, and deposition thickness is 50nm;

[0056] S4: a copper layer is deposited on the surface of the transition layer by using high-pulse low-energy ion beam technology with pure copper (99.95%) as target material, arc current is 100A, bias voltage is 5kV, frequency is 100Hz, and deposition thickness is 3μm, to obtain a ceramic copper-clad plate.

[0057] Embodiment 2

[0058] S1: the surface of the aluminum nitride ceramic substrate is reduced by using a Kaufman gas ion source, argon flow is 60sccm, hydrogen flow is 30sccm, voltage is 30kV, beam intensity is 30mA, and processing time is 40min, to obtain a first processing ceramic substrate;

[0059] S2: the first processing ceramic substrate is implanted with Ni element by using high-energy ion beam technology to perform bonding, beam intensity is 20mA, energy is 20keV, and implantation dose is 1×1016ions / cm2, to obtain a second processing ceramic substrate; 15 ions / cm 2

[0060] ​​S3: with NiCr (atomic mass ratio of 8:2) alloy as target material, a transition layer is deposited on the surface of the second treated ceramic substrate by low-energy ion beam technology, the transition layer is NiCr (atomic mass ratio of 8:2) alloy, the starting arc current is 100 A, the bias voltage is 200 V, the duty cycle is 90%, and the deposition thickness is 50 nm;

[0061] S4: with pure copper (99.95%) as target material, a copper layer is deposited on the surface of the transition layer by high pulse low-energy ion beam technology, the starting arc current is 100 A, the bias voltage is 5 kV, the frequency is 20 Hz, the deposition thickness is 3 μm, and the ceramic copper-clad plate is obtained.

[0062] Example 3

[0063] S1: the surface of the aluminum nitride ceramic substrate is reduced by using a Kaufman gas ion source, the argon flow rate is 60 sccm, the hydrogen flow rate is 30 sccm, the voltage is 30 kV, the beam intensity is 30 mA, and the treatment time is 40 min, and the first treated ceramic substrate is obtained;

[0064] S2: Al elements are injected on the surface of the first treated ceramic substrate by high-energy ion beam technology for bonding, the beam intensity is 20 mA, the energy is 20 keV, and the injection dose is 1×10 16 ions / cm 2 , and the second treated ceramic substrate is obtained;

[0065] S3: with NiCr (atomic mass ratio of 8:2) alloy as target material, a transition layer is deposited on the surface of the second treated ceramic substrate by low-energy ion beam technology, the transition layer is NiCr (atomic mass ratio of 8:2) alloy, the starting arc current is 100 A, the bias voltage is 200 V, the duty cycle is 90%, and the deposition thickness is 80 nm;

[0066] S4: with pure copper (99.95%) as target material, a copper layer is deposited on the surface of the transition layer by high pulse low-energy ion beam technology, the starting arc current is 100 A, the bias voltage is 5 kV, the frequency is 100 Hz, the deposition thickness is 3 μm, and the ceramic copper-clad plate is obtained.

[0067] Comparative Example 1

[0068] S1: Ni elements are injected on the surface of the aluminum nitride ceramic substrate by high-energy ion beam technology, the beam intensity is 20 mA, the energy is 20 keV, and the injection dose is 1×10 16 ions / cm 2 ;

[0069] S2: with NiCr (atomic mass ratio of 8:2) alloy as target material, a transition layer is deposited by low-energy ion beam technology, the transition layer is NiCr (atomic mass ratio of 8:2) alloy, the starting arc current is 100 A, the bias voltage is 200 V, the duty cycle is 90%, and the deposition thickness is 50 nm;

[0070] S3: A copper layer was deposited on the surface of the transition layer by using high pulse low energy ion beam technology with pure copper (99.95%) as the target material, an arc current of 100 A, a bias voltage of 5 kV, a frequency of 20 Hz, and a deposition thickness of 3 μm, to obtain a ceramic-based copper-clad plate.

[0071] Comparative Example 2

[0072] S1: Surface reduction was performed on the surface of the aluminum nitride ceramic substrate by using a Kaufman gas ion source with an argon flow rate of 60 seem, a hydrogen flow rate of 30 seem, a voltage of 30 kV, a beam current intensity of 30 mA, and a treatment time of 40 min, to obtain a first treated ceramic substrate;

[0073] S2: A transition layer was deposited on the surface of the first treated ceramic substrate by using low energy ion beam technology with NiCr (atomic mass ratio of 8:2) alloy as the target material, an arc current of 100 A, a bias voltage of 200 V, a duty cycle of 90%, and a deposition thickness of 50 nm;

[0074] S3: A copper layer was deposited on the surface of the transition layer by using high pulse low energy ion beam technology with pure copper (99.95%) as the target material, an arc current of 100 A, a bias voltage of 5 kV, a frequency of 20 Hz, and a deposition thickness of 3 μm, to obtain a ceramic-based copper-clad plate.

[0075] Comparative Example 3

[0076] S1: Surface reduction was performed on the surface of the aluminum nitride ceramic by using a Kaufman gas ion source with an argon flow rate of 60 seem, a hydrogen flow rate of 30 seem, a voltage of 30 kV, a beam current intensity of 30 mA, and a treatment time of 40 min, to obtain a first treated ceramic substrate;

[0077] S2: Ni element was implanted on the surface of the first treated ceramic substrate by using high energy ion beam technology, a beam current intensity of 20 mA, an energy of 20 keV, and an implantation dose of 1*10 16 ions / cm 2 , to obtain a second treated ceramic substrate;

[0078] S3: A transition layer was deposited on the surface of the second treated ceramic substrate by using low energy ion beam technology with NiCr (atomic mass ratio of 8:2) alloy as the target material, an arc current of 100 A, a bias voltage of 200 V, a duty cycle of 90%, and a deposition thickness of 50 nm;

[0079] S4: A copper layer was deposited on the surface of the transition layer by using high pulse low energy ion beam technology with pure copper (99.95%) as the target material, an arc current of 100 A, a bias voltage of 0 kV, a frequency of 0 Hz, and a deposition thickness of 3 μm, to obtain a ceramic-based copper-clad plate.

[0080] Characterization and performance testing

[0081] 1) The surface morphology of the ceramic-based copper-clad laminate prepared in Example 1 was tested, and the results are shown in the figure. Figure 3 As shown in Figure 3, the prepared copper-clad layer has low surface roughness and few defects.

[0082] 2) The surface roughness (Ra) of the ceramic-based copper-clad laminates prepared in Examples 1-3 and Comparative Examples 1-3 was tested using a roughness profilometer with a stylus method. The results are shown in [Figure 1]. Figure 4 ;Depend on Figure 4 The test data from Examples 1-3 and Comparative Examples 1-3 show that high-pulse low-energy ion beam technology can effectively reduce the roughness of the coating, and the higher the frequency, the greater the roughness.

[0083] 3) The adhesion strength of the ceramic-based copper-clad laminates prepared in Examples 1-3 and Comparative Examples 1-3 was tested using a tensile peel test. Copper lines with a width of 5 mm were etched onto the different ceramic-based copper-clad laminates. The average force during peeling of the copper lines from the ceramic substrate was then recorded using a peel strength tester. The results are shown in [Figure 1]. Figure 5 ;Depend on Figure 5 Based on the test data of the bonding strength of Examples 1-3 and Comparative Examples 1-3, Kaufman ion source treatment can effectively improve the bonding strength between the substrate and the copper layer, and high-energy ion beam treatment is the key to improving the bonding strength. The implantation dose and implanted element also affect the bonding strength. The bonding strength increases with the increase of the implantation dose, and the implantation of Ni is significantly better than that of Al.

[0084] 4) The density of the ceramic-based copper-clad laminates prepared in Examples 1-3 and Comparative Examples 1-3 was tested using a two-dimensional measuring instrument. The number of pinholes smaller than 0.1 mm was marked on any 250 mm x 250 mm area. The results are shown in Table 1.

[0085] Table 1 shows the number of pinholes smaller than 0.1 mm in any 250 mm x 250 mm area.

[0086]

[0087]

[0088] As can be seen from the test data of Examples 1-3 and Comparative Examples 1-3 in Table 1, the pulse frequency in the high-pulse low-energy ion beam technology affects the density of the copper layer, and the higher the frequency, the better the density.

[0089] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for preparing a ceramic-based copper-clad plate by using a device for preparing a ceramic-based copper-clad plate, comprising the following steps: carrying out surface reduction on a ceramic substrate placed in a vacuum chamber (101) by using a Kaufman gas ion source device (102) to obtain a first treated ceramic substrate; the surface reduction is carried out at an argon flow rate of 20-80 sccm, a hydrogen flow rate of 0-40 sccm, a voltage of 20-40 KV, a beam intensity of 1-50 mA, and a treatment time of 20-60 min; after the surface reduction, the surface roughness of the ceramic substrate changes by ≤0.1 μm; A high-energy ion beam device (103) is used to implant metal on the surface of the first treated ceramic substrate to perform keying, thereby obtaining a second treated ceramic substrate; the beam intensity of the keying is 10-100 mA, the energy is 10-40 keV, and the implantation dose is 1×(10 15 ~10 17 ) ions / cm 2 ; the metal elements used for implanting the metal include Ti, Al, Ni, Cr, or Cu; carrying out first surface deposition on the second treated ceramic substrate by using a low-energy ion beam device (104) to form a transition layer; the transition layer is composed of Ni and / or Cr; carrying out second surface deposition on the transition layer by using a high-pulse low-energy ion beam device (105) to form a copper layer, thereby obtaining a ceramic-based copper-clad plate. The device for preparing a ceramic-based copper-clad plate is specifically a vacuum chamber (101); a Kaufman gas ion source device (102) for carrying out bond breaking and micro-reduction on the surface of a ceramic substrate; a high-energy ion beam device (103) for realizing metal element injection and bond making to form a ceramic-metal mixed layer between the ceramic substrate and the injected metal atoms; a low-energy ion beam device (104) for forming a transition layer; and a high-pulse low-energy ion beam device (105) for depositing a copper film layer; the Kaufman gas ion source device (102), the high-energy ion beam device (103), the low-energy ion beam device (104), and the high-pulse low-energy ion beam device (105) are respectively distributed at four ends of the vacuum chamber (101).

2. The method of claim 1, wherein, It further comprises a workpiece disc (106); the workpiece disc (106) is arranged in the vacuum chamber (101).

3. The method of claim 1, wherein, The first surface deposition is carried out at an arc current of 60-150 A, a bias voltage of 0-300 V, a duty cycle of 20-95%, and a deposition thickness of 10-100 nm.

4. The method of claim 1, wherein, The second surface deposition is carried out at an arc current of 60-150 A, a bias voltage of 0-7 kV and not 0, a frequency of 0-200 Hz and not 0, and a deposition thickness of 1-9 μm.

5. The method of claim 1, wherein, The surface roughness of the ceramic-based copper-clad plate is <0.2 μm.

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