Antireflection film and method for producing the same

Abstract

The application discloses an antireflection film and a preparation method thereof, and relates to the technical field of optical films.The antireflection film comprises a substrate and a Teflon film evaporated on the substrate, wherein the Teflon film has a porous structure.The preparation method of the antireflection film comprises the following steps: providing the substrate; and evaporating the Teflon film on the substrate, and opening an ion source during the evaporation so that the Teflon film has the porous structure.The antireflection film and the preparation method thereof have better antireflection effect, and are convenient to prepare and beneficial to large-scale production.

Description

Technical Field

[0001] The present invention relates to the technical field of optical thin films, and in particular to an anti-reflection film and a preparation method thereof. Background Art

[0002] Anti-reflection coatings (AR) are a type of optical film that reduces the reflectivity of substrates and are widely used in products such as optical components and sensors. According to optical thin film theory, the refractive index of the outermost layer significantly influences the effectiveness of the AR coating. However, the lowest refractive index of films actually used in nature is 1.38, which does not achieve optimal AR performance for many substrates. Therefore, researchers in the field of optics are constantly striving to develop materials with lower refractive indices and achieve better AR performance.

[0003] At present, the existing methods for making low-refractive index materials mainly include reactive ion etching technology and hydrolysis method. Among them, reactive ion etching technology is to ionize the gas in the reaction chamber to form a plasma with strong chemical activity, and make it react chemically with the atoms on the surface of the etched sample to form volatile substances to achieve the purpose of corroding the surface of the sample, thereby obtaining a film structure with lower filling density and refractive index; the hydrolysis method is to first pre-coat a dense aluminum oxide film on the substrate by vacuum deposition, and then transfer it to hot deionized water for water bath heating. During this period, the aluminum oxide will undergo hydrolysis reaction, and finally form a grass-like aluminum oxide structure layer with a spatially gradient refractive index. However, conventional anti-reflection films prepared by existing technologies still have the problem of poor anti-reflection effect, or have problems such as expensive equipment, high technical barriers, low production capacity, and poor stability, which are not conducive to large-scale production. Summary of the Invention

[0004] The object of the present invention is to provide an anti-reflection film and a preparation method thereof, which have better anti-reflection effect than conventional anti-reflection films, are easy to prepare, and are conducive to large-scale production.

[0005] The embodiment of the present invention is achieved as follows:

[0006] One aspect of the present invention provides an anti-reflection film comprising a substrate and a Teflon film deposited on the substrate, wherein the Teflon film has a porous structure. The anti-reflection film and its preparation method provide enhanced anti-reflection effects, are easy to prepare, and facilitate large-scale production.

[0007] Optionally, the anti-reflection film further includes a dielectric film stack located between the substrate and the Teflon film, and the film structure of the dielectric film stack is (LH) n , where L represents a low-refractive-index material layer, H represents a high-refractive-index material layer, n is the number of cycles, and n is an integer greater than or equal to 1.

[0008] Optionally, the material of the low refractive index material film layer is silicon dioxide, magnesium fluoride or a silicon-aluminum mixed material; and / or the material of the high refractive index material film layer is oxide, nitride or a mixed material.

[0009] Optionally, the total number of film layers of the dielectric film stack is between 3 and 50, and the thickness of any film layer of the dielectric film stack is less than 300 nm.

[0010] Optionally, the anti-reflection film further includes a transition layer located between the Teflon film and the dielectric film stack.

[0011] Optionally, the material of the transition layer is magnesium fluoride.

[0012] Optionally, the thickness of the transition layer is between 3 nm and 50 nm.

[0013] Optionally, the water drop angle of the Teflon film is greater than 130°.

[0014] Another aspect of the present invention provides a method for preparing an anti-reflection film, which comprises: providing a substrate; vapor-depositing a Teflon film on the substrate, and turning on an ion source during the vapor deposition to make the Teflon film have a porous structure.

[0015] Optionally, a Teflon film is evaporated on the substrate, and an ion source is turned on to make the Teflon film have a porous structure, comprising:

[0016] A Teflon film is evaporated on a substrate, and an ion source is turned on to make the Teflon film have a porous structure, wherein the current of the evaporation electron beam is between 1 mA and 50 mA, the ion source flow rate voltage is between 50 V and 300 V, the flow rate current is between 100 mA and 350 mA, the acceleration voltage is between -500 V and -200 V, and the argon gas flow rate is between 5 sccm and 50 sccm.

[0017] The beneficial effects of the present invention include:

[0018] The anti-reflection film provided by the present application includes a substrate and a Teflon film evaporated on the substrate, wherein the Teflon film has a porous structure. The anti-reflection film provided by the present application has excellent optical properties. The residual reflectivity of the substrate is as low as 0.03%, and the reflectivity of the single-layer film is less than 1% in the wavelength band between 420nm and 680nm. In addition, the anti-reflection film provided by the present application also has a good self-cleaning function, which is beneficial for cleaning lenses. In addition, the anti-reflection film provided by the present application also has the advantage of being easy to prepare. It only needs to use the evaporator that has been widely used in the industry to perform conventional operations to complete the production of the product, without the need for additional equipment and personnel. Moreover, the entire preparation process of the anti-reflection film is completed in the evaporator, and can be processed and formed in one step without switching equipment or processing environment. Therefore, the present application also has the advantages of low cost, low technical threshold, simple operation and high stability, which is conducive to large-scale production. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 This is a schematic diagram of the structure of an anti-reflection film provided by an embodiment of the present invention;

[0021] Figure 2 The second structural diagram of the anti-reflection film provided by an embodiment of the present invention;

[0022] Figure 3 A surface structure diagram of a Teflon film provided in an embodiment of the present invention;

[0023] Figure 4 A cross-sectional morphology diagram of a Teflon film provided in an embodiment of the present invention;

[0024] Figure 5 A water drop angle test diagram of a Teflon film provided in an embodiment of the present invention;

[0025] Figure 6 A self-cleaning test diagram of a Teflon film provided in an embodiment of the present invention;

[0026] Figure 7 A graph showing the measured wavelength and reflectivity of a Teflon film according to an embodiment of the present invention;

[0027] Figure 8 Graphs showing the measured refractive index and extinction coefficient of the Teflon film versus wavelength, respectively, provided in an embodiment of the present invention;

[0028] Figure 9 A graph showing measured wavelength and reflectivity when the anti-reflection film provided by an embodiment of the present invention includes a dielectric film stack;

[0029] Figure 10 A schematic flow chart of a method for preparing an anti-reflection film provided in an embodiment of the present invention.

[0030] Icon: 10-substrate; 20-Teflon film; 30-dielectric film stack; 31-low refractive index material film layer; 32-high refractive index material film layer; 40-transition layer. DETAILED DESCRIPTION

[0031] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0032] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0033] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0034] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer" and the like indicate positions or locations based on the positions shown in the accompanying drawings, or the positions or locations in which the inventive product is typically placed when in use. These terms are intended solely to facilitate the description of the present invention and to simplify the description, and are not intended to indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third," etc., are used solely to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0035] Furthermore, terms such as "horizontal" and "vertical" do not necessarily mean that a component must be absolutely horizontal or overhanging, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.

[0036] In the description of the present invention, it should also be noted that, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; they may refer to mechanical connections or electrical connections; they may refer to direct connections or indirect connections through an intermediate medium; and they may refer to internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0037] Please refer to Figure 1 and Figure 2 This embodiment provides an antireflection film comprising a substrate 10 and a Teflon film 20 deposited on the substrate 10. The Teflon film 20 has a porous structure. The antireflection film and its preparation method provide enhanced antireflection effects, are easy to prepare, and facilitate large-scale production.

[0038] The material of the substrate 10 is not limited in this application, and those skilled in the art can select a suitable material on their own.

[0039] The Teflon film 20 is disposed on the substrate 10 , wherein the Teflon film 20 has a porous structure.

[0040] It should be noted that, first, the porous structure of the Teflon film 20 refers to the presence of multiple pores. For example, the specific number and distribution of these multiple pores can be determined by those skilled in the art and are not limited in this application. For example, the pore pattern of the porous structure of the Teflon film 20 can be specifically controlled by controlling the ion source's flow voltage, flow current, acceleration voltage, or argon gas flow rate.

[0041] In this embodiment, if Figure 3 As shown, multiple holes can be evenly distributed on the Teflon film 20, and the sum of the areas of the multiple holes can account for between 1 / 5 and 1 / 2 of the Teflon film 20. For example, the sum of the areas of the multiple holes accounts for 20%, 30%, 40% or 50% of the Teflon film 20.

[0042] Second, the porous structure of the Teflon film 20 can be created by activating an ion source, bombarding the Teflon with argon ions. At appropriate ion source energy, the high-energy argon ions bombard the Teflon film 20 with a portion of its structure, leaving only a portion. This remaining Teflon forms the porous Teflon film 20, which is deposited on the substrate 10.

[0043] Alternatively, in this embodiment, please refer to Figure 5 , the water drop angle of the Teflon film 20 is greater than 130°.

[0044] The anti-reflection film provided in this application has a Teflon film 20, and the Teflon film 20 has a porous structure. Figure 6 As shown, self-cleaning tests conducted on the anti-reflection film provided by this application show that the anti-reflection film using the porous Teflon film 20 has excellent self-cleaning properties. When a water droplet is dropped onto the surface of the substrate 10 coated with the porous Teflon film 20, the water droplet quickly slides down under the action of gravity, carrying away dust on the surface. Measurements show that the water droplet angle of the porous Teflon film 20 provided by this application is greater than 130°, which is superior to conventional waterproof films (which have a water droplet angle between 110° and 120°).

[0045] In addition, it should be noted that the anti-reflection film provided by the present application also has the advantage of being easy to prepare. The present application only needs to use an evaporator that has been widely used in the industry to perform conventional operations to complete the production of the product, without the need for additional equipment and personnel. In addition, the process of the Teflon film 20 with a porous structure is highly compatible. When it is necessary to prepare a multi-layer anti-reflection film, ion source assisted electron beam evaporation technology can be used to sequentially and continuously evaporate on the substrate 10. Moreover, the entire preparation process of the anti-reflection film provided by the present application is completed in the evaporator, and can be processed and formed in one go without switching equipment or processing environment. Therefore, the anti-reflection film provided by the present application also has the advantages of low preparation cost, low technical threshold, simple operation, and high stability, which is conducive to large-scale production.

[0046] More importantly, the anti-reflection coating provided by this application exhibits excellent optical properties. After coating the substrate 10 with a layer of porous Teflon film 20 provided by this application, the residual reflectivity is as low as 0.03%. Within the 420nm to 680nm wavelength range, the reflectivity of a single film is less than 1%.

[0047] Generally, the common film material (such as silicon oxide, titanium oxide) deposited on the substrate 10 will form a compact thin film, and the refractive index of the common Teflon film is as high as 1.39, which has no optical advantage compared with conventional materials. However, the antireflection film provided by the present application uses the Teflon film 20 with a porous structure, and due to the arrangement of the porous structure, the optical performance of the Teflon film 20 with a porous structure is obviously higher than that of the conventional antireflection film. Specifically, after a single layer of the Teflon film 20 with a porous structure is plated, the residual reflectivity of the substrate 10 is only 0.03%. In the wavelength range of 420 nm to 680 nm, the reflectivity of the single layer film is less than 1%.

[0048] To further verify the optical performance of the antireflection film provided by the present application, the ion source assisted electron beam evaporation technology is used, the set electron beam current is 5 mA, the applied ion source flow voltage is 150 V, the flow current is 200 mA, the acceleration voltage is -300 V, and the argon flow rate is 20 sccm. After 2 min of deposition, the Teflon film 20 with a porous structure with a thickness of 110 nm is formed on the substrate 10. Among them, the surface structure of the obtained Teflon film 20 is shown in Figure 3 , and the cross-sectional morphology is shown in Figure 4 . Figure 7 The actual antireflection effect after plating the Teflon film 20 with a porous structure on the optical glass with a refractive index of 1.52 is shown. It can be seen that at the center wavelength, the residual reflectivity is only 0.03%, and in the visible light wavelength range of 420 nm-680 nm, it is less than 1%.

[0049] The spectral data is imported into the film design software Optilayer for fitting calculation, and the optical constants obtained are shown in Figure 8 . The results show that the refractive index of the Teflon film 20 with a porous structure at the center wavelength is only 1.255, which is very close to the refractive index of the ideal antireflection film (the refractive index of the ideal antireflection film is 1.23), which is the fundamental reason for producing excellent antireflection effect. In addition, the extinction coefficient of the Teflon film with a porous structure is less than 0.0005 in the visible light wavelength range of 420 nm to 680 nm, so it also has the advantage of good transparency.

[0050] In summary, the anti-reflection film provided in the present application includes a substrate 10 and a Teflon film 20 vapor-deposited on the substrate 10, wherein the Teflon film 20 has a porous structure. The anti-reflection film provided in the present application has excellent optical properties. The residual reflectivity of the substrate 10 is as low as 0.03%, and the reflectivity of the single-layer film is less than 1% in the wavelength band between 420nm and 680nm. In addition, the anti-reflection film provided in the present application also has an excellent self-cleaning function, which is beneficial for cleaning lenses. In addition, the anti-reflection film provided in the present application has the advantage of being easy to prepare. It only needs to use the evaporator that has been widely used in the industry to perform conventional operations to complete the product production, without the need for additional equipment and personnel. Moreover, the entire preparation process of the anti-reflection film is completed in the evaporator, and can be processed and formed in one step without switching equipment or processing environment. Therefore, the present application also has the advantages of low cost, low technical threshold, simple operation, and high stability, which is conducive to large-scale production.

[0051] Since the single-layer anti-reflection film has a good anti-reflection effect at the center wavelength and the nearby wavelength band, but the reflectivity will increase rapidly after deviating from this wavelength band, its performance still has room for improvement. Therefore, in order to further improve the performance advantage of the anti-reflection film, in this embodiment, please refer to Figure 2 The anti-reflection film further includes a dielectric film stack 30 located between the substrate 10 and the Teflon film 20. The film structure of the dielectric film stack 30 is (LH) n , where L represents the low refractive index material layer 31, H represents the high refractive index material layer 32, n is the number of cycles, and n is an integer greater than or equal to 1.

[0052] By arranging the dielectric film stack 30 between the substrate 10 and the Teflon film 20, the reflectivity of the anti-reflection film can be lower than 0.1% in a wide wavelength band (i.e., within the wavelength band of 420nm to 680nm). Figure 9 .

[0053] Thanks to the high compatibility of the porous Teflon process, when the anti-reflection film is provided with a dielectric film stack 30, ion-source-assisted electron beam evaporation technology can be used to sequentially and continuously deposit it onto the substrate 10. The entire process is completed within the evaporator, allowing for a single-step process without switching equipment or processing environments. Therefore, this application offers the advantages of low cost, low technical barriers, simple operation, and high stability, making it conducive to large-scale production.

[0054] Optionally, in this embodiment, the material of the low-refractive-index material layer 31 may be silicon dioxide, magnesium fluoride, or a silicon-aluminum mixed material. The material of the high-refractive-index material layer 32 may be an oxide, a nitride, or a mixed material. The specific materials for the low-refractive-index material layer 31 and the high-refractive-index material layer 32 may be determined by those skilled in the art and are not limited by this application.

[0055] In addition, in this embodiment, the total number of film layers of the dielectric film stack 30 is between 3 and 50, and the thickness of any film layer of the dielectric film stack 30 is less than 300 nm.

[0056] For example, the thickness of any film layer of the dielectric film stack 30 may be 10 nm, 20 nm, 50 nm, 100 nm, 200 nm, or 300 nm.

[0057] Optionally, in order to improve the adhesion between film layers, the anti-reflection film provided in the present application further includes a transition layer 40 located between the Teflon film 20 and the dielectric film stack 30 .

[0058] For example, the material of the transition layer 40 may be magnesium fluoride. It should be understood that the material of the transition layer 40 being magnesium fluoride is only an example given in this application. In other embodiments, those skilled in the art may also choose other materials that can improve the adhesion of the film layer.

[0059] Furthermore, in this embodiment, the thickness of the transition layer 40 is between 3 nm and 50 nm. For example, the thickness of the transition layer 40 can be 3 nm, 10 nm, 20 nm, 30 nm, 40 nm, or 50 nm, etc., which are not listed here.

[0060] In one embodiment, titanium oxide and silicon oxide are used to design a dielectric film stack 30, with a porous Teflon film 20 serving as the outermost layer. A layer of magnesium fluoride (MgF2) with a thickness between 3 nm and 50 nm is added between the dielectric film stack 30 and the porous Teflon film as a transition layer 40 to improve film adhesion. After optimization using optical thin film design software, the final film structure is as follows: substrate 10 | SiO2 (194.02 nm) | TiO2 (10.88 nm) | SiO2 (51.33 nm) | TiO2 (23.04 nm) | SiO2 (52.39 nm) | TiO2 (13.57 nm) | MgF2 (11.79 nm) | p-Teflon (110 nm) | air.

[0061] Please refer to Figure 10 Another aspect of the present invention provides a method for preparing an anti-reflection film, the method comprising the following steps:

[0062] S100 , providing a substrate 10 .

[0063] The present application does not limit the specific material and thickness of the substrate 10 , and those skilled in the art can choose according to their needs.

[0064] S200 , vapor-depositing a Teflon film 20 on the substrate 10 , and turning on an ion source during the vapor deposition to make the Teflon film 20 have a porous structure.

[0065] In this embodiment, the ion source is an argon ion source, that is, argon ions are used to bombard the Teflon film 20 so that the Teflon film 20 has a porous structure.

[0066] The porous Teflon film 20 of the present application is prepared using ion-source-assisted electron beam evaporation technology, using conventional vapor deposition methods. Specifically, Teflon particles are placed in a copper crucible. After the vacuum chamber pressure reaches a specified pressure, a preset electron beam current is applied to heat the Teflon particles. Once the temperature reaches a certain level, the Teflon particles evaporate and deposit onto the surface of the substrate 10, forming the Teflon film 20.

[0067] It should be noted that in this application, the ion source needs to be turned on at the beginning of evaporation and maintained until the evaporation is completed. In this way, the Teflon film 20 obtained can be bombarded by the high-energy argon ions under the action of the ion source energy, so that part of the structure of the Teflon film 20 is removed, and only part of the structure remains. The remaining Teflon forms a porous structure.

[0068] Generally speaking, regardless of whether or not an ion source is used to assist with the deposition, common film materials (such as silicon oxide and titanium oxide) will form a dense film after being deposited onto substrate 10. That is, even without the assistance of an ion source during the evaporation process, the resulting Teflon film 20 is also dense, but its refractive index is as high as 1.39, which does not offer any optical advantages compared to conventional materials. However, under the influence of appropriate ion source energy, portions of the Teflon film 20's structure are bombarded by high-energy argon ions, leaving only a portion of the structure, and this remaining Teflon film forms a porous structure. As evaporation proceeds, a porous film of a certain thickness is formed on substrate 10.

[0069] Optionally, the above step S200, evaporating the Teflon film 20 on the substrate 10 and turning on the ion source to make the Teflon film 20 have a porous structure, specifically includes the following steps:

[0070] A Teflon film 20 is evaporated on the substrate 10, and the ion source is turned on to make the Teflon film 20 have a porous structure, wherein the current of the evaporation electron beam is between 1 mA and 50 mA, the ion source flow rate voltage is between 50 V and 300 V, the flow rate current is between 100 mA and 350 mA, the acceleration voltage is between -500 V and -200 V, and the argon gas flow rate is between 5 sccm and 50 sccm.

[0071] It should be noted that if the ion source energy is too high, the bombardment of argon ions will be too strong, and most of the Teflon will be bombarded away, resulting in failure to form a film. Therefore, appropriate ion source energy is a key factor in whether a porous Teflon film 20 can be formed. The present application found that when the electron beam current is between 1 mA and 50 mA, the ion source voltage is between 50 V and 300 V, the current is between 100 mA and 350 mA, the acceleration voltage is between -500 V and -200 V, and the argon flow rate is between 5 sccm and 50 sccm, the porous Teflon film 20 can be successfully formed.

[0072] The foregoing description is merely an optional embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that the present invention is susceptible to various modifications and variations. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

[0073] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any appropriate manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

Claims

1. An anti-reflection film, characterized in that: The invention comprises a substrate and a Teflon film vapor-deposited on the substrate, wherein the Teflon film has a porous structure; the porous structure on the Teflon film is obtained by turning on an ion source during vapor deposition of the Teflon film so that the Teflon is bombarded by argon ions; The argon ions bombard a portion of the Teflon structure of the Teflon film, and a Teflon film with a porous structure is formed based on the remaining Teflon structure; the water drop angle of the Teflon film is greater than 130°; The anti-reflection film further includes a dielectric film stack located between the substrate and the Teflon film, and a transition layer located between the Teflon film and the dielectric film stack.

2. The anti-reflection film according to claim 1, wherein The membrane structure of the dielectric membrane stack is (LH) n , where L represents a low-refractive-index material layer, H represents a high-refractive-index material layer, n is the number of cycles, and n is an integer greater than or equal to 1.

3. The anti-reflection film according to claim 2, wherein The material of the low refractive index material film layer is silicon dioxide, magnesium fluoride or a silicon-aluminum mixed material.

4. The anti-reflection film according to claim 2, wherein The total number of film layers of the dielectric film stack is between 3 and 50, and the thickness of any film layer of the dielectric film stack is less than 300 nm.

5. The anti-reflection film according to claim 1, wherein The material of the transition layer is magnesium fluoride.

6. The anti-reflection film according to claim 1, wherein The thickness of the transition layer is between 3 nm and 50 nm.

7. A method for preparing an anti-reflection film, characterized in that: include: providing a substrate; A Teflon film is evaporated on the substrate, and an ion source is activated during the evaporation to provide the Teflon film with a porous structure; wherein argon ions bombard the Teflon film with a portion of the Teflon structure, thereby forming a Teflon film with a porous structure based on the remaining Teflon structure; and a water drop angle of the Teflon film is greater than 130°. A dielectric film stack is provided between the substrate and the Teflon film, and an over-plating layer is provided between the dielectric film stack and the Teflon film.

8. The method for preparing an anti-reflection film according to claim 7, wherein: The step of evaporating a Teflon film on the substrate and turning on an ion source to make the Teflon film have a porous structure comprises: A Teflon film is evaporated on the substrate, and an ion source is turned on to make the Teflon film have a porous structure, wherein the current of the evaporation electron beam is between 1 mA and 50 mA, the ion source flow rate voltage is between 50 V and 300 V, the flow rate current is between 100 mA and 350 mA, the acceleration voltage is between -500 V and -200 V, and the argon gas flow rate is between 5 sccm and 50 sccm.

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